TW202020561A - 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法 Download PDF

Info

Publication number
TW202020561A
TW202020561A TW108125494A TW108125494A TW202020561A TW 202020561 A TW202020561 A TW 202020561A TW 108125494 A TW108125494 A TW 108125494A TW 108125494 A TW108125494 A TW 108125494A TW 202020561 A TW202020561 A TW 202020561A
Authority
TW
Taiwan
Prior art keywords
group
ring
radiation
general formula
acid
Prior art date
Application number
TW108125494A
Other languages
English (en)
Chinese (zh)
Inventor
米久田康智
畠山直也
椿英明
冨賀敬充
東耕平
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202020561A publication Critical patent/TW202020561A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW108125494A 2018-09-05 2019-07-18 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法 TW202020561A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-166279 2018-09-05
JP2018166279 2018-09-05

Publications (1)

Publication Number Publication Date
TW202020561A true TW202020561A (zh) 2020-06-01

Family

ID=69721799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108125494A TW202020561A (zh) 2018-09-05 2019-07-18 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法

Country Status (5)

Country Link
JP (1) JP7223765B2 (ja)
KR (1) KR102588117B1 (ja)
CN (1) CN112602019A (ja)
TW (1) TW202020561A (ja)
WO (1) WO2020049859A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200356001A1 (en) * 2019-05-10 2020-11-12 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods of forming resist patterns with such compositions
WO2021131280A1 (ja) * 2019-12-26 2021-07-01 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
WO2023095563A1 (ja) * 2021-11-25 2023-06-01 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3995575B2 (ja) 2002-09-30 2007-10-24 富士フイルム株式会社 ポジ型レジスト組成物
JP2004151364A (ja) 2002-10-30 2004-05-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP4937594B2 (ja) 2006-02-02 2012-05-23 東京応化工業株式会社 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法
JP2008191218A (ja) 2007-02-01 2008-08-21 Tokyo Ohka Kogyo Co Ltd 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法
JP5528230B2 (ja) 2010-06-25 2014-06-25 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
KR101961639B1 (ko) * 2014-09-30 2019-03-25 후지필름 가부시키가이샤 패턴 형성 방법, 레지스트 패턴, 및 전자 디바이스의 제조 방법
JP6332113B2 (ja) * 2014-12-08 2018-05-30 信越化学工業株式会社 シュリンク材料及びパターン形成方法
JP6826385B2 (ja) * 2015-08-27 2021-02-03 住友化学株式会社 レジスト組成物
JP6931707B2 (ja) * 2017-09-13 2021-09-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜の製造方法、パターン形成方法、及び電子デバイスの製造方法

Also Published As

Publication number Publication date
KR102588117B1 (ko) 2023-10-12
JP7223765B2 (ja) 2023-02-16
KR20210032463A (ko) 2021-03-24
JPWO2020049859A1 (ja) 2021-08-12
CN112602019A (zh) 2021-04-02
WO2020049859A1 (ja) 2020-03-12

Similar Documents

Publication Publication Date Title
TWI825018B (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法
TWI827260B (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法
TW202024789A (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子器件之製造方法
WO2019123895A1 (ja) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、化合物
TWI813634B (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法
TWI811239B (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法
TWI727142B (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法及電子器件的製造方法
TW202020561A (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法
TW201914990A (zh) 感光性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法
TW201914994A (zh) 感光性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法
TW202012467A (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子器件之製造方法
JP7379536B2 (ja) 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
JP7220229B2 (ja) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP2023184542A (ja) 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、レジスト膜、電子デバイスの製造方法
TWI805669B (zh) 抗蝕劑組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法
JP7280957B2 (ja) 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法
TWI815921B (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法
KR20230124646A (ko) 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 화합물, 및 수지
TW202010763A (zh) 感光化射線性或感放射線性樹脂組成物、圖案形成方法、抗蝕劑膜及電子元件的製造方法
TW202006471A (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法、樹脂
WO2020105523A1 (ja) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
TW202011115A (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件之製造方法
TW202010762A (zh) 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法
TW202136224A (zh) 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子器件的製造方法