KR102588117B1 - 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 - Google Patents

감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 Download PDF

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KR102588117B1
KR102588117B1 KR1020217004522A KR20217004522A KR102588117B1 KR 102588117 B1 KR102588117 B1 KR 102588117B1 KR 1020217004522 A KR1020217004522 A KR 1020217004522A KR 20217004522 A KR20217004522 A KR 20217004522A KR 102588117 B1 KR102588117 B1 KR 102588117B1
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South Korea
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group
ring
general formula
sensitive
atom
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KR1020217004522A
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Korean (ko)
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KR20210032463A (ko
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야스노리 요네쿠타
나오야 하타케야마
히데아키 츠바키
타카미츠 토미가
코헤이 히가시
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020217004522A 2018-09-05 2019-07-09 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 KR102588117B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-166279 2018-09-05
JP2018166279 2018-09-05
PCT/JP2019/027094 WO2020049859A1 (ja) 2018-09-05 2019-07-09 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20210032463A KR20210032463A (ko) 2021-03-24
KR102588117B1 true KR102588117B1 (ko) 2023-10-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217004522A KR102588117B1 (ko) 2018-09-05 2019-07-09 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법

Country Status (5)

Country Link
JP (1) JP7223765B2 (ja)
KR (1) KR102588117B1 (ja)
CN (1) CN112602019A (ja)
TW (1) TW202020561A (ja)
WO (1) WO2020049859A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200356001A1 (en) * 2019-05-10 2020-11-12 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods of forming resist patterns with such compositions
WO2021131280A1 (ja) * 2019-12-26 2021-07-01 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JPWO2023095563A1 (ja) * 2021-11-25 2023-06-01

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004126013A (ja) * 2002-09-30 2004-04-22 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2017045039A (ja) * 2015-08-27 2017-03-02 住友化学株式会社 レジスト組成物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004151364A (ja) * 2002-10-30 2004-05-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP4937594B2 (ja) 2006-02-02 2012-05-23 東京応化工業株式会社 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法
JP2008191218A (ja) 2007-02-01 2008-08-21 Tokyo Ohka Kogyo Co Ltd 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法
JP5528230B2 (ja) * 2010-06-25 2014-06-25 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
WO2016052273A1 (ja) * 2014-09-30 2016-04-07 富士フイルム株式会社 パターン形成方法、レジストパターン、及び、電子デバイスの製造方法
JP6332113B2 (ja) * 2014-12-08 2018-05-30 信越化学工業株式会社 シュリンク材料及びパターン形成方法
KR102513125B1 (ko) * 2017-09-13 2023-03-23 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004126013A (ja) * 2002-09-30 2004-04-22 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2017045039A (ja) * 2015-08-27 2017-03-02 住友化学株式会社 レジスト組成物

Also Published As

Publication number Publication date
KR20210032463A (ko) 2021-03-24
WO2020049859A1 (ja) 2020-03-12
JPWO2020049859A1 (ja) 2021-08-12
CN112602019A (zh) 2021-04-02
TW202020561A (zh) 2020-06-01
JP7223765B2 (ja) 2023-02-16

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