TW202020079A - 用於鈷之應用的化學機械研磨漿料 - Google Patents
用於鈷之應用的化學機械研磨漿料 Download PDFInfo
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- TW202020079A TW202020079A TW109101774A TW109101774A TW202020079A TW 202020079 A TW202020079 A TW 202020079A TW 109101774 A TW109101774 A TW 109101774A TW 109101774 A TW109101774 A TW 109101774A TW 202020079 A TW202020079 A TW 202020079A
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- 239000002002 slurry Substances 0.000 title claims abstract description 97
- 239000010941 cobalt Substances 0.000 title claims abstract description 46
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 46
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000005498 polishing Methods 0.000 title description 8
- 239000000126 substance Substances 0.000 title description 5
- 239000002904 solvent Substances 0.000 claims abstract description 15
- 239000002738 chelating agent Substances 0.000 claims abstract description 14
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- -1 pH adjustors Substances 0.000 claims abstract description 8
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims abstract description 8
- 239000012141 concentrate Substances 0.000 claims description 58
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 18
- 239000003002 pH adjusting agent Substances 0.000 claims description 14
- 239000007800 oxidant agent Substances 0.000 claims description 13
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 12
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 10
- 239000012964 benzotriazole Substances 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 8
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 7
- 239000004094 surface-active agent Substances 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 229960002449 glycine Drugs 0.000 claims description 6
- 239000004310 lactic acid Substances 0.000 claims description 6
- 235000014655 lactic acid Nutrition 0.000 claims description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 6
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 5
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 5
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 5
- 235000004279 alanine Nutrition 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 4
- DXYYSGDWQCSKKO-UHFFFAOYSA-N 2-methylbenzothiazole Chemical compound C1=CC=C2SC(C)=NC2=C1 DXYYSGDWQCSKKO-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical group OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- 239000004471 Glycine Substances 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 4
- 235000015165 citric acid Nutrition 0.000 claims description 4
- 229930195712 glutamate Natural products 0.000 claims description 4
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 4
- 239000001630 malic acid Substances 0.000 claims description 4
- 235000011090 malic acid Nutrition 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 claims description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 claims description 4
- 235000019260 propionic acid Nutrition 0.000 claims description 4
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 4
- PFNFFQXMRSDOHW-UHFFFAOYSA-N spermine Chemical compound NCCCNCCCCNCCCN PFNFFQXMRSDOHW-UHFFFAOYSA-N 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 3
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 claims description 2
- KWTSXDURSIMDCE-QMMMGPOBSA-N (S)-amphetamine Chemical compound C[C@H](N)CC1=CC=CC=C1 KWTSXDURSIMDCE-QMMMGPOBSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 claims description 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims description 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 claims description 2
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 claims description 2
- QXTRPGAMVIONMK-UHFFFAOYSA-N 2-amino-5-ethyl-1,3,4-thiadiazole Chemical compound CCC1=NN=C(N)S1 QXTRPGAMVIONMK-UHFFFAOYSA-N 0.000 claims description 2
- JWYUFVNJZUSCSM-UHFFFAOYSA-N 2-aminobenzimidazole Chemical compound C1=CC=C2NC(N)=NC2=C1 JWYUFVNJZUSCSM-UHFFFAOYSA-N 0.000 claims description 2
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- FYTLHYRDGXRYEY-UHFFFAOYSA-N 5-Methyl-3-pyrazolamine Chemical compound CC=1C=C(N)NN=1 FYTLHYRDGXRYEY-UHFFFAOYSA-N 0.000 claims description 2
- PZBQVZFITSVHAW-UHFFFAOYSA-N 5-chloro-2h-benzotriazole Chemical compound C1=C(Cl)C=CC2=NNN=C21 PZBQVZFITSVHAW-UHFFFAOYSA-N 0.000 claims description 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 2
- 229930024421 Adenine Natural products 0.000 claims description 2
- GFFGJBXGBJISGV-UHFFFAOYSA-N Adenine Chemical compound NC1=NC=NC2=C1N=CN2 GFFGJBXGBJISGV-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- ZKQDCIXGCQPQNV-UHFFFAOYSA-N Calcium hypochlorite Chemical compound [Ca+2].Cl[O-].Cl[O-] ZKQDCIXGCQPQNV-UHFFFAOYSA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 claims description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 2
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004153 Potassium bromate Substances 0.000 claims description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 2
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 claims description 2
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 2
- QUEDYRXQWSDKKG-UHFFFAOYSA-M [O-2].[O-2].[V+5].[OH-] Chemical compound [O-2].[O-2].[V+5].[OH-] QUEDYRXQWSDKKG-UHFFFAOYSA-M 0.000 claims description 2
- 235000011054 acetic acid Nutrition 0.000 claims description 2
- 229960000643 adenine Drugs 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- 229940025084 amphetamine Drugs 0.000 claims description 2
- 229940009098 aspartate Drugs 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 claims description 2
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
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- 235000013905 glycine and its sodium salt Nutrition 0.000 claims description 2
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 claims description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 2
- 229960000448 lactic acid Drugs 0.000 claims description 2
- YZQBYALVHAANGI-UHFFFAOYSA-N magnesium;dihypochlorite Chemical compound [Mg+2].Cl[O-].Cl[O-] YZQBYALVHAANGI-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 150000004965 peroxy acids Chemical class 0.000 claims description 2
- 235000011056 potassium acetate Nutrition 0.000 claims description 2
- 229960004109 potassium acetate Drugs 0.000 claims description 2
- 229940094037 potassium bromate Drugs 0.000 claims description 2
- 235000019396 potassium bromate Nutrition 0.000 claims description 2
- 239000001508 potassium citrate Substances 0.000 claims description 2
- 229960002635 potassium citrate Drugs 0.000 claims description 2
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims description 2
- 235000011082 potassium citrates Nutrition 0.000 claims description 2
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 claims description 2
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 2
- 239000001230 potassium iodate Substances 0.000 claims description 2
- 229940093930 potassium iodate Drugs 0.000 claims description 2
- 235000006666 potassium iodate Nutrition 0.000 claims description 2
- 239000012286 potassium permanganate Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 2
- 229940063675 spermine Drugs 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 claims description 2
- 239000004474 valine Substances 0.000 claims description 2
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- 239000003795 chemical substances by application Substances 0.000 claims 2
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- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- MKBAMMMBEHOLHI-UHFFFAOYSA-N 1H-pyrrole 1H-1,2,4-triazole Chemical compound N1N=CN=C1.N1C=CC=C1 MKBAMMMBEHOLHI-UHFFFAOYSA-N 0.000 description 1
- GBHSCKFAHCEEAZ-UHFFFAOYSA-N 2-[hydroxymethyl(methyl)amino]acetic acid Chemical compound OCN(C)CC(O)=O GBHSCKFAHCEEAZ-UHFFFAOYSA-N 0.000 description 1
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- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
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- GXSCFXCADMTKTM-UHFFFAOYSA-N N,N-dimethylmethanamine phenylmethanol Chemical compound CN(C)C.OCC1=CC=CC=C1 GXSCFXCADMTKTM-UHFFFAOYSA-N 0.000 description 1
- UZMAPBJVXOGOFT-UHFFFAOYSA-N Syringetin Natural products COC1=C(O)C(OC)=CC(C2=C(C(=O)C3=C(O)C=C(O)C=C3O2)O)=C1 UZMAPBJVXOGOFT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- MOOSBPSAZDOBSN-UHFFFAOYSA-N acetic acid;azane Chemical compound N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O MOOSBPSAZDOBSN-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 235000009697 arginine Nutrition 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- KCFYHBSOLOXZIF-UHFFFAOYSA-N dihydrochrysin Natural products COC1=C(O)C(OC)=CC(C2OC3=CC(O)=CC(O)=C3C(=O)C2)=C1 KCFYHBSOLOXZIF-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- OSSXLTCIVXOQNK-UHFFFAOYSA-M dimethyl(dipropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(C)CCC OSSXLTCIVXOQNK-UHFFFAOYSA-M 0.000 description 1
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- 230000002209 hydrophobic effect Effects 0.000 description 1
- NQDAZSFONLAYGS-UHFFFAOYSA-L hydroxy-(hydroxy(dioxo)chromio)oxy-dioxochromium;potassium Chemical compound [K].O[Cr](=O)(=O)O[Cr](O)(=O)=O NQDAZSFONLAYGS-UHFFFAOYSA-L 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229920000307 polymer substrate Polymers 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- 239000011885 synergistic combination Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000004308 thiabendazole Substances 0.000 description 1
- 235000010296 thiabendazole Nutrition 0.000 description 1
- WJCNZQLZVWNLKY-UHFFFAOYSA-N thiabendazole Chemical compound S1C=NC(C=2NC3=CC=CC=C3N=2)=C1 WJCNZQLZVWNLKY-UHFFFAOYSA-N 0.000 description 1
- 229960004546 thiabendazole Drugs 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Images
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- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
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Abstract
一種研磨包括鈷的表面或基材之漿料。該漿料進一步包含一陰離子及/或陽離子界面活性劑,其各者具有磷酸鹽基團、長鏈烷基或二者。該漿料亦包括腐蝕抑制劑、研磨料、移除速率促進劑、溶劑、pH調整劑及螯合劑。該漿料的pH較佳為8或更高。
Description
相關申請案之相互參照
本申請案主張2017年5月25日提出之美國暫時性專利申請案序號62/511,065的利益,其以參考方式併入本文。
發明領域
本揭示提供一種對研磨鈷材料係優良之濃縮劑及使用點(point-of-use)研磨漿料。特別是,本揭示之濃縮劑及漿料某種程度上包含下列的協同性組合:高純度研磨料、具有磷酸鹽基團及/或長烷基鏈的陰離子界面活性劑及苯并三唑衍生物。
發明背景
已於最近幾年看見鈷在化學機械研磨(CMP)工業中之用途與日俱增,其係一用於縮小晶片的新型材料。先前係於現在使用鈷的位置處使用銅及鎢。鈷的黏貼性非常良好、具有均勻的沈積性質、具有低電阻/好電導及好的間隙填充。因此,在某些現在及許多未來的晶片製造設計中,其係使用在數種晶片層之鎢及/或銅的位置處。將在2017年的後段及2018年非常寛廣地於晶片中出現含鈷的商業產品。
鈷係一種機械性硬但是化學性脆弱的材料。例如,鈷具有Mohs硬度5,其中銅具有Mohs硬度3。(Mohs硬度愈高材料愈硬,鑽石具有Mohs硬度10)。但是,鈷的化學性非常脆弱而需小心處理,此係半導體工業所要面對的主要問題。鈷膜具化學反應性及非常易受化學腐蝕影響。鈷腐蝕會將鈷膜氧化成較高氧化狀態。研磨後,若該腐蝕未停止,該膜將繼續被蝕刻及腐蝕。因此,在晶片中完成電路系統及配線後,受腐蝕的區域會漏出電子而造成裝置損壞。
許多現在可獲得的CMP漿料係設計成用來移除在較老的晶片設計中更常見之材料,諸如前述提及的銅與鎢。在這些較舊的CMP漿料中之某些組分可在鈷上造成有害及不能接受的缺陷,因為鈷更易受化學腐蝕影響。結果,當在鈷層上使用銅研磨漿料時,會發生不能接受的腐蝕、晶圓表面形貌及移除速率選擇性。此外,有需要一種能最佳化想要的材料移除且仍然保護鈷之新型CMP漿料。
發明概要
在一個具體實例中,本揭示提供一種使用在鈷基材上的研磨漿料濃縮劑,其包含:至少一種選自於由陰離子界面活性劑、陽離子界面活性劑及其組合所組成之群的界面活性劑;至少一種選自於由苯并三唑、苯并三唑衍生物及其組合所組成之群的唑;一溶劑;一移除速率促進劑;一研磨料;一pH調整劑,其係鹼;及一螯合劑。在一個具體實例中,該陰離子界面活性劑係存在且包含一或多個磷酸鹽基團及下列之一或多種:長烷基鏈、多個環氧乙烷基團及長烷基鏈與多個環氧乙烷基團之組合。
在另一個具體實例中,本揭示提供一種使用在鈷基材上的使用點研磨漿料,其包含上述研磨漿料濃縮劑、水及氧化劑。該界面活性劑係以5 ppm至1000 ppm之量呈現,以該漿料的總重量為基準;該苯并三唑、苯并三唑或其組合係以10 ppm至0.5%之量呈現,以該漿料的總重量為基準;該溶劑係以25 ppm至2.0%之量呈現,以該漿料的總重量為基準;該移除速率促進劑係以0.01%至2.5%之量呈現,以該漿料的總重量為基準;該研磨料係以1%至12%之量呈現,以該漿料的總重量為基準;該pH調整劑係以0.1%至10%之量呈現,以該漿料的總重量為基準;該螯合劑係以0.05%至2.5%之量呈現,以該漿料的總重量為基準;及該氧化劑係以500 ppm至約5%之量呈現,以該POU漿料的總重量為基準。
本揭示亦提供一種用以研磨至少部分包含鈷的基材之方法。在一種方法中,該濃縮劑係經稀釋而形成一使用點漿料,然後讓該基材與該使用點漿料接觸。另一種方法包含讓該基材與該漿料接觸的步驟。
如在本揭示中所使用,「濃縮劑」係一種組成物,其所包括的組分量比將在使用點(POU),即,該組成物接觸欲研磨的晶圓之點處所使用者高。使用者可採用該濃縮劑並以其它原料(諸如水或氧化劑,諸如過氧化氫)稀釋其,使得該POU漿料的組分最終具有比在該漿料中者低之重量百分比。
較佳實施例之詳細說明
本揭示提供一種解決現在可獲得的產品,特別關於研磨鈷材料之缺陷的CMP濃縮劑及POU漿料。有利的是,本揭示提供一種陰離子界面活性劑與苯并三唑衍生物之組合,其與所選擇的研磨料及鈷移除速率促進劑(RREs)協同或特別良好地作用,以高速率研磨常見的晶圓材料,同時仍然保護鈷。例如,本揭示之濃縮劑及漿料對常見的晶圓材料鄰-矽酸四乙酯(TEOS)提供想要的移除速率,同時仍然提供低的鈷移除及/或保護。
該陰離子界面活性劑提供作為鈷的腐蝕抑制劑。其可係一具有一或多個磷酸鹽基團之化合物。除了磷酸鹽基團外,該陰離子界面活性劑具有一或多個長烷基鏈、或多個環氧乙烷基團、或二種之組合。每個磷酸鹽基團亦可有一或多個烷基鏈或多個環氧乙烷基團。在一個具體實例中,該烷基鏈可具有六至二十四個碳。在另一個具體實例中,該烷基鏈可具有十八至二十個碳。不由理論所界限,咸信該長烷基鏈使得該化合物疏水及保護鈷表面。在銅CMP漿料中,該腐蝕抑制劑經常係一環狀化合物,諸如苯并三唑或1,2,4-三唑,因此提供較少保護。
合適於該陰離子界面活性劑的化合物包括但不限於具有磷酸鹽基團及長烷基鏈的那些、具有包括雙鍵的長烴鏈之肌胺酸鹽、具有長烴鏈的肌胺酸鹽;具有烴鏈的胺基酸,諸如甘胺酸、精胺酸、麩胺酸或丙胺酸;具有二烷基鏈的磺酸鹽、具有烴鏈的磺酸鹽、羊毛脂肪酸、具有烴鏈的醣苷及其任何組合。某些陽離子界面活性劑亦可在本組成物中良好地作用,諸如胺基烷基矽氧烷、具有長烷基鏈的咪唑、具有烴鏈的銨、聚合物基底的銨及其任何組合。可使用該陽離子界面活性劑來取代該陰離子界面活性劑或與其相關連。該陰離子及/或陽離子界面活性劑可以每百萬5份(ppm)至1000 ppm及其任何次範圍之量呈現,以該POU漿料的總重量為基準。該陰離子及/或陽離子界面活性劑亦可以每百萬5份(ppm)至100 ppm及其任何次範圍之量呈現,以該POU漿料的總重量為基準。
當使用上述界面活性劑時,本揭示之組成物亦可包含選自於由下列所組成之群的唑:苯并三唑(BTA)、BTA衍生物及其組合。該BTA衍生物可選自於由下列所組成之群:腺嘌呤、苯并咪唑、涕必靈(thiabendazole)、甲苯并三唑、1,2,3-三唑、1,2,4-三唑、1-羥基苯并三唑、2-甲基苯并噻唑、2-胺基苯并咪唑、2-胺基-5-乙基-1,3,4-噻二唑(thiadazole)、3,5-二胺基-1,2,4-三唑、3-胺基-5-甲基吡唑、4-胺基-4H-1,2,4-三唑、5-甲基苯并三唑、5-氯苯并三唑、5-胺基四唑及其組合。該BTA及/或BTA衍生物可以10 ppm至0.5%或其任何次範圍之量呈現。該BTA及/或BTA衍生物可以10 ppm至800 ppm或其任何次範圍之量呈現,以該POU漿料的總重量為基準。
可在本揭示之POU漿料中使用一可幫助該BTA衍生物溶解之溶劑。該溶劑可係一或多種伸烷基二醇。在一個具體實例中,該溶劑包含一或多種選自於由下列所組成之群的溶劑:乙醇、1-丙醇、2-丙醇、正丁醇、丙二醇、2-甲氧基乙醇、2-乙氧基乙醇、丙二醇丙基醚及乙二醇。該溶劑可以25 ppm至2%或其任何次範圍之量呈現,以該POU漿料的總重量為基準。該溶劑亦可以50 ppm至0.5%或其任何次範圍之量呈現,以該POU漿料的總重量為基準。
本揭示之組成物亦包括一移除速率促進劑(RRE),其可選自於由下列所組成之群:葡萄糖酸、乳酸、檸檬酸、酒石酸、蘋果酸、羥乙酸、丙二酸、蟻酸、草酸、醋酸、丙酸、過醋酸、琥珀酸、乳酸、醋酸鉀、檸檬酸鉀、胺基醋酸、苯氧基醋酸、二羥乙甘胺酸、磷酸、縮二羥乙酸、甘油酸、三(羥甲基)甲基甘胺酸(tricine)、丙胺酸、組胺酸、纈胺酸、苯丙胺酸、脯胺酸、麩醯胺酸、天冬胺酸、麩胺酸、精胺酸、離胺酸、酪胺酸、苯甲酸、其混合物及其鹽。該RRE可以0.01%至2.5%或其任何次範圍之量呈現,以該POU漿料的總重量為基準。該RRE亦可以0.01%至0.5%或其任何次範圍之量呈現,以該POU漿料的總重量為基準。
本揭示之組成物亦包括一研磨料。該研磨料可選自於由下列所組成之群:氧化鋁、二氧化矽、二氧化鈦、二氧化鈰、氧化鋯、其共形成產物或其混合物,及其亦可係陰離子、陽離子、非離子及其任何組合。在一個具體實例中,該研磨料具高純度及可具有少於100 ppm的醇、少於100 ppm的氨及少於每十億100份(ppb)的鹼,諸如鈉。該研磨料可以1%至12%或其任何次範圍之量呈現,以該POU漿料的總重量為基準。該研磨料亦可以2%至8%或其任何次範圍之量呈現,以該POU漿料的總重量為基準。
該研磨料之尺寸可在十六奈米至一百八十奈米間,或於此之間的任何次範圍。該研磨料之尺寸亦可在二十四奈米至一百三十奈米間,或於此之間的任何次範圍。該研磨料之尺寸亦可在四十奈米至七十奈米間,或於此之間的任何次範圍。如在下列更詳細地討論,通常來說,粒子愈大該晶圓材料的移除速率愈高。但是,當該粒子之尺寸變得太高,諸如大於一百三十奈米時,該移除速率可下降。咸信此發生係因為較大的粒子意謂著較少整體可獲得的研磨料表面積及較低數目的各別研磨料粒子。
該組成物亦可包括一作用為pH調整劑的鹼。該鹼pH調整劑幫助將該組成物pH帶至其操作pH值。該使用來調整pH的鹼可係任何合適的鹼,諸如氫氧化銨、氫氧化鈉、氫氧化鉀、氫氧化銫、單乙醇胺、二乙醇胺、三乙醇胺、氫氧化四丁基銨、氫氧化四丙基銨、氫氧化四乙基銨、氫氧化四甲基銨、氫氧化乙基三甲基銨、氫氧化二乙基二甲基銨、氫氧化二甲基二丙基銨、氫氧化苄基三甲基銨或其任何組合。該pH調整劑可以0.1%至10%或其任何次範圍之量呈現,以該POU漿料的總重量為基準。在一個具體實例中,該pH調整劑包含氫氧化鉀。該pH調整劑亦可以0.2%至0.5%或其任何次範圍之量呈現,以該POU漿料的總重量為基準。該POU漿料的pH應該係鹼性,及該pH調整劑可幫助達成想要的pH。較佳的是,該濃縮劑及POU漿料之pH係大於8.0,或更佳為9.0或更高。
本揭示的組成物亦包含一螯合劑。該螯合劑提供一陰離子來源,其鍵結至金屬及提高該被研磨的金屬之移除速率。此試劑可作用的金屬有鈦、鉭及鈷,單獨或在含有其它元素的化合物中。該螯合劑可係包括多個羧酸或胺基酸或二者官能基之組合的任何分子。某些實施例有乙二胺四醋酸(EDTA)、亞胺二醋酸(IDA)、N-羥乙基-乙二胺三醋酸(NHEDTA)、氮基三醋酸(NTA)、二伸乙基三胺五醋酸(DTPA)、羥基乙基伸乙基二胺三醋酸(HEDTA)、三伸乙基四胺六醋酸(TTHA)、丙酸、檸檬酸、丙二酸、馬來酸、酒石酸、羥乙酸、乳酸、蘋果酸、草酸、琥珀酸、甘胺酸、丙胺酸、絲胺酸或其組合。該螯合劑的濃度可係0.05%至2.5%或其任何次範圍,以該POU漿料的總重量為基準。該螯合劑的濃度亦可係0.05%至0.15%或其任何次範圍,以該POU漿料的總重量為基準。
上述各別組分各者所敘述的量係與該POU漿料相關。本揭示預期上述敘述的組分可以濃縮劑來結合、包裝及貯存,然後以水及選擇性額外原料稀釋其來形成該POU漿料。該濃縮劑可稀釋至少二(2X)或三(3X)倍。在該濃縮劑中的每種組分之重量百分比將與上述列出者呈比例。例如,使用欲稀釋2X的濃縮劑時,該濃縮劑的每種組分具有如POU漿料之兩倍量。此意謂著該陰離子界面活性劑將以10 ppm至2000 ppm及其任何次範圍之量呈現,以該濃縮劑的總重量為基準。該BTA及/或BTA衍生物將以20 ppm至1%及其任何次範圍之量呈現,以該濃縮劑的總重量為基準。該溶劑將以50 ppm至4%及其任何次範圍之量呈現,以該濃縮劑的總重量為基準。該RRE將以0.02%至5%或其任何次範圍之量呈現,以該濃縮劑的總重量為基準。該研磨料將以2%至24%或其任何次範圍之量呈現,以該濃縮劑的總重量為基準。該pH調整劑將以0.2%至20%或其任何次範圍之量呈現,以該濃縮劑的總重量為基準。該螯合劑的濃度將係0.10%至5%或其任何次範圍,以該濃縮劑的總重量為基準。對欲被稀釋成其它比率,例如,3X及較高的濃度來說,將以類似方式調整在該濃縮劑中之每種原料量。諸如下列更詳細描述的3X濃縮劑,上述每種原料將相關於POU漿料具有三倍量。
當稀釋該濃縮劑而形成該POU漿料時,可加入一氧化劑。該氧化劑可選自於由下列所組成之群:過氧化氫、過硫酸銨、硝酸銀(AgNO3
)、硝酸鐵或氯化鐵、過酸或鹽、臭氧水、高鐵氰化鉀、重鉻酸鉀、碘酸鉀、溴酸鉀、三氧化二釩、次氯酸、次氯酸鈉、次氯酸鉀、次氯酸鈣、次氯酸鎂、硝酸鐵、過錳酸鉀、其它無機或有機過氧化物、及其混合物。在一個具體實例中,該氧化劑係過氧化氫。該氧化劑可以約500 ppm至約5%之量呈現,以該POU漿料的總重量為基準;或約0.4%至約2%,以該POU漿料的總重量為基準;及於此之間的任何次範圍。
本揭示亦預期一種使用任何上述濃縮劑或POU漿料之方法。使用該濃縮劑時,該方法可包含稀釋該濃縮劑以形成該POU漿料,然後讓至少部分包含鈷的表面與該POU漿料接觸之步驟。使用該POU漿料時,該方法包含讓該至少部分包含鈷的表面與該漿料接觸之步驟。
本揭示的濃縮劑及POU漿料之某些優點係顯示在伴隨的圖形中。除了如其它方面提到外,下列圖形比較先述技藝、比較例POU漿料與本揭示的POU漿料。
先述技藝漿料(CE)的組成物係如下:
鹼 0.1-10重量%
有機酸-1 0.05-2.5重量%
胺基酸 0.01-1重量%
唑腐蝕抑制劑-1 0.001-0.5重量%
有機酸-2 0.01-1重量%
唑腐蝕抑制劑-2 0.001-0.5重量%
膠體氧化矽研磨料 1-12重量%
氧化劑 0.5-5重量%
DI水 80-90重量%
pH 8.0-10.5
測試根據本揭示的POU漿料,其中使用稀釋3X的濃縮劑來形成該POU。所使用的濃縮劑於本文中指示為A3X。當稀釋該A3X濃縮劑來形成該POU漿料時,加入水及氧化劑。該A3X之組成物係如下:
該A3X之組成物係如下:
鹼 0.1-10重量%
有機酸 0.05-2.5重量%
離子性界面活性劑腐蝕抑制劑 0.0005-0.1重量%
胺基酸 0.01-2.5重量%
唑腐蝕抑制劑 0.001-0.5重量%
有機溶劑 0.0025-2重量%
膠體氧化矽研磨料 1-12重量%
氧化劑 0.5-5重量%
DI水 80-95重量%
pH 8.0-10.5
圖1顯示出使用具有不同粒子尺寸的研磨料之先述技藝漿料CE及以A3X為主的本POU漿料之碟狀缺陷圖。碟狀指為該晶圓在特別區域的表面上具有不想要的凹洞之缺陷。對在圖1中的資料來說,以Mirra機器及H804研磨墊來研磨200毫米晶圓。圖1顯示出多種尺寸從9x1微米下至0.25x0.25微米的碟狀缺陷之計數。如可在圖中看見,使用先述技藝漿料CE時,所產生的缺陷非常深至最高250埃。使用本揭示之漿料A3X時,碟狀缺陷的尺寸激烈減少100埃或更大。該研磨料的尺寸愈小,碟狀缺陷愈小。
圖2及3係在鈷材料試樣上測量先述技藝漿料CE及本揭示之漿料的靜態蝕刻速率(SER)。靜態蝕刻速率係測量沒有來自研磨工具的任何外部壓力,單獨由該漿料將移除多少材料。於此情況中,較高的鈷靜態蝕刻速率係不想要。在六十℃下將該漿料施加至試樣五分鐘。
如顯示在圖2中,漿料CE的靜態蝕刻速率非常高係15.4埃/分鐘。相較之下,包括陰離子界面活性劑(在圖3中指為鈷腐蝕抑制劑,或「Co Cl」)的全部A3X漿料更更低係至多5.1埃/分鐘。圖2顯示出變化Co RRE量的效應。於上述圖表對A3X所顯示出係十倍高的Co RRE量下,該靜態蝕刻速率係2.6埃/分鐘,及在兩倍Co RRE量下,該靜態蝕刻速率係0.6埃/分鐘。
圖3顯示出變化Co Cl量在靜態蝕刻速率上的效應。沒有任何Co Cl時,該靜態蝕刻速率非常高係22.8埃/分鐘,比CE漿料更差。增加Co Cl量時,該靜態蝕刻速率戲劇性降低。應注意的是,甚至在上述表中對A3X所顯示出係四分之一量的低Co Cl量下,該靜態蝕刻速率仍然非常低係5.1埃/分鐘。
圖4顯示出使用A3X漿料及從24奈米至130奈米的不同研磨料粒子尺寸之多種材料的移除速率圖。如可看見,除了鈷外的每種材料之移除速率會隨著粒子尺寸而增加至最高70奈米,然後在130奈米時降低。如先前討論,此可因為當該研磨料較大時,其在漿料中較少及可獲得用於研磨的粒子表面積較少。於此顯示出的全部移除速率可依應用而令人滿意。對鈷的移除速率遵循相反趨勢,如其在130奈米處返回向上前會隨著粒子尺寸增加而減少。
圖5a及5b各別顯示出CE及A3X的邊緣磨蝕(EoE)曲線。如在圖5a中顯示出,先述技藝漿料CE留下比本揭示之漿料寬且深的EoE。EoE係漿料有多精確或清楚地治理在晶圓之二種材料,例如,鈷與介電質間的界面之度量。通常來說,EoE缺陷的寬度及深度愈小愈好。
圖6顯示出A3X與不同Co RRE量及一半Co Cl量的鈷移除速率圖。如可看見及如由在圖2中的靜態蝕刻資料建議,Co RRE的量愈高,鈷的移除速率愈高。在某些應用中,會想要高的鈷移除速率。
圖7顯示出多種材料之移除速率如為Co Cl量的函數圖。如所顯示,甚至當在A3X中之Co Cl量增加3至12倍因子時,鈷的移除速率有非常些微改變。但是,如顯示在圖8中,當在A3X中的Co Cl量下降低於三倍量及特別是低於顯示在A3X中的量(即,至0.8x及低於)時,鈷之移除速率明顯上升。
雖然本揭示已經伴隨著參照一或多個範例性具體實例進行描述,將由熟習該項技術者了解,可製得多種改變及可以同等物取代其元素而沒有離開本揭示之範圍。此外,可製得許多改質以讓特別的狀況或材料適應本揭示之教導而沒有離開其範圍。因此,意欲本揭示不限於所揭示作為最好的預期模式之特別具體實例,但是本揭示將包括落在所附加的申請專利範圍之範圍內的全部具體實例。
圖1顯示出先述技藝與本揭示之漿料的碟狀缺陷比較圖。
圖2及3顯示出先述技藝漿料及根據本揭示之數種漿料在鈷晶圓試樣上的靜態蝕刻速率之比較資料表。
圖4顯示出具有不同研磨料粒子尺寸之本揭示的漿料之移除速率圖。
圖5a及5b各別顯示出先述技藝及本揭示之漿料的邊緣磨蝕資料。
圖6顯示出具有不同螯合劑量之本揭示的漿料之多種晶圓材料的移除速率圖。
圖7及8顯示出具有不同鈷腐蝕抑制劑量之本揭示的漿料之多種晶圓材料的移除速率圖。
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Claims (16)
- 一種使用在鈷基材上之研磨漿料濃縮劑,其包含: 至少一種界面活性劑,該界面活性劑包含一或多個磷酸鹽基團、六至二十四個碳的烷基鏈、及多個環氧乙烷基團; 至少一種選自於由以下所組成之群的唑:苯并三唑、腺嘌呤、苯并咪唑、涕必靈、甲苯并三唑、1,2,3-三唑、1,2,4-三唑、1-羥基苯并三唑、2-甲基苯并噻唑、2-胺基苯并咪唑、2-胺基-5-乙基-1,3,4-噻二唑、3,5-二胺基-1,2,4-三唑、3-胺基-5-甲基吡唑、4-胺基-4H-1,2,4-三唑、5-甲基苯并三唑、5-氯苯并三唑、5-胺基四唑及其等之組合; 一溶劑; 一移除速率促進劑; 一研磨料; 一pH調整劑,其係鹼;及 一螯合劑。
- 如請求項1之濃縮劑,其中該界面活性劑係以10 ppm至2000 ppm之量呈現,以該濃縮劑的總重量為基準; 該唑係以20 ppm至1%之量呈現,以該濃縮劑的總重量為基準; 該溶劑係以50 ppm至4%之量呈現,以該濃縮劑的總重量為基準; 該移除速率促進劑係以0.02%至5%之量呈現,以該濃縮劑的總重量為基準; 該研磨料係以2%至24%之量呈現,以該濃縮劑的總重量為基準; 該pH調整劑係以0.2%至20%之量呈現,以該濃縮劑的總重量為基準;及 該螯合劑係以之量呈現0.10%至5%,以該濃縮劑的總重量為基準。
- 如請求項1之濃縮劑,其中該界面活性劑係以15 ppm至3000 ppm之量呈現,以該濃縮劑的總重量為基準; 該唑係以30 ppm至1.5%之量呈現,以該濃縮劑的總重量為基準; 該溶劑係以75 ppm至6.0%之量呈現,以該濃縮劑的總重量為基準; 該移除速率促進劑係以0.03%至7.5%之量呈現,以該濃縮劑的總重量為基準; 該研磨料係以3%至36%之量呈現,以該濃縮劑的總重量為基準; 該pH調整劑係以0.3%至30%之量呈現,以該濃縮劑的總重量為基準;及 該螯合劑係以0.15%至7.5%之量呈現,以該濃縮劑的總重量為基準。
- 如請求項1之濃縮劑,其中該溶劑係選自於由下列所組成之群:乙醇、1-丙醇、2-丙醇、正丁醇、丙二醇、2-甲氧基乙醇、2-乙氧基乙醇、丙二醇丙基醚、乙二醇及其任何組合。
- 如請求項1之濃縮劑,其中該移除速率促進劑係選自於由下列所組成之群:葡萄糖酸、乳酸、檸檬酸、酒石酸、蘋果酸、羥乙酸、丙二酸、蟻酸、草酸、醋酸、丙酸、過醋酸、琥珀酸、乳酸、醋酸鉀、檸檬酸鉀、胺基醋酸、苯氧基醋酸、二羥乙甘胺酸、磷酸、縮二羥乙酸、甘油酸、三(羥甲基)甲基甘胺酸、丙胺酸、組胺酸、纈胺酸、苯丙胺酸、脯胺酸、麩醯胺酸、天冬胺酸、麩胺酸、甘胺酸、精胺酸、離胺酸、酪胺酸、苯甲酸及其任何組合。
- 如請求項1之濃縮劑,其中該移除速率促進劑係一胺基酸。
- 如請求項1之濃縮劑,其中該研磨料係二氧化矽,其包含少於100 ppm的醇、少於100 ppm的氨及少於100 ppb的鹼金屬。
- 如請求項1之濃縮劑,其中該研磨料的尺寸係十六奈米至一百八十奈米。
- 如請求項1之濃縮劑,其中該pH調整劑係選自於由下列所組成之群:氫氧化銨、氫氧化鈉、氫氧化鉀、氫氧化銫、單乙醇胺、二乙醇胺、三乙醇胺、氫氧化四丁基銨、氫氧化四丙基銨、氫氧化四乙基銨、氫氧化四甲基銨、氫氧化乙基三甲基銨、氫氧化二乙基二甲基銨、氫氧化二甲基二丙基銨、氫氧化苄基三甲基銨及其任何組合。
- 如請求項1之濃縮劑,其中該螯合劑係選自於由下列所組成之群:乙二胺四醋酸、亞胺二醋酸、N-羥乙基-乙二胺三醋酸、氮基三醋酸、二伸乙基三胺五醋酸、羥基乙基伸乙基二胺三醋酸、三伸乙基四胺六醋酸、丙酸、檸檬酸、丙二酸、馬來酸、酒石酸、羥乙酸、乳酸、蘋果酸、草酸、琥珀酸、甘胺酸、丙胺酸、絲胺酸及其組合。
- 如請求項1之濃縮劑,其中該濃縮劑的pH係8或更高。
- 一種使用在鈷基材上的使用點(point-of-use)研磨漿料,其包含如請求項1至11中任一項之濃縮劑、水及氧化劑,以使 該界面活性劑係以5 ppm至1000 ppm之量呈現,以該漿料的總重量為基準; 該唑係以10 ppm至0.5%之量呈現,以該漿料的總重量為基準; 該溶劑係以25 ppm至2.0%之量呈現,以該漿料的總重量為基準; 該移除速率促進劑係以0.01%至2.5%之量呈現,以該漿料的總重量為基準; 該研磨料係以1%至12%之量呈現,以該漿料的總重量為基準; 該pH調整劑係以0.1%至10%之量呈現,以該漿料的總重量為基準; 該螯合劑係以0.05%至2.5%之量呈現,以該漿料的總重量為基準;及 該氧化劑係以500 ppm至約5%之量呈現,以該POU漿料的總重量為基準。
- 如請求項12之漿料,其中該漿料的pH係8或更高。
- 如請求項12之漿料,其中該氧化劑係選自於由下列所組成之群:過氧化氫、過硫酸銨、硝酸銀、硝酸鐵或氯化鐵、過酸或過酸鹽、臭氧水、高鐵氰化鉀、重鉻酸鉀、碘酸鉀、溴酸鉀、三氧化二釩、次氯酸、次氯酸鈉、次氯酸鉀、次氯酸鈣、次氯酸鎂、硝酸鐵、過錳酸鉀及其任何組合。
- 一種研磨至少部分包含鈷的基材之方法,其步驟包括: 稀釋如請求項1之濃縮劑至少二倍之因子以形成一使用點研磨漿料;及 讓該基材與該使用點研磨漿料接觸。
- 一種研磨至少部分包含鈷的基材之方法,其包含下列步驟: 讓該基材與如請求項12之使用點研磨漿料接觸。
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- 2018-05-25 CN CN201810516084.2A patent/CN108929633B/zh active Active
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TW201900794A (zh) | 2019-01-01 |
US20180340094A1 (en) | 2018-11-29 |
WO2018217628A1 (en) | 2018-11-29 |
TWI686452B (zh) | 2020-03-01 |
KR20190125340A (ko) | 2019-11-06 |
CN108929633B (zh) | 2021-07-06 |
TW202338031A (zh) | 2023-10-01 |
KR102324957B1 (ko) | 2021-11-15 |
EP3631045A4 (en) | 2021-01-27 |
EP3631045A1 (en) | 2020-04-08 |
CN108929633A (zh) | 2018-12-04 |
TWI801705B (zh) | 2023-05-11 |
US10676646B2 (en) | 2020-06-09 |
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