TW202019808A - Manufacturing method of micro fluid actuator - Google Patents

Abstract

A manufacturing method of a micro fluid actuator is disclosed and comprises following steps of providing a substrate and depositing an oxidized material on the substrate to form a cavity layer, depositing a nitride material on the cavity layer to form a vibration layer, depositing a metal material and a piezoelectric material on the vibration layer to form a piezoelectric actuation layer, etching the substrate to form a plurality of fluid channels, depositing the oxidized material on the substrate to form a mask layer, and etching the substrate to form a plurality of communicating channels, etching the cavity layer to form a fluid storage chamber, providing an orifice layer and etching the orifice layer to form a plurality of openings, forming a channel layer and a plurality of channels on the orifice layer by a Photo Process and a photolithography process, and bonding the orifice layer and the substrate by a thermo-compression bonding process and a flip-chip packaging process, thereby the micro fluid actuator is produced.

Description

Manufacturing method of microfluidic actuator

This case relates to a method of manufacturing a microfluidic actuator, particularly a method of manufacturing a microfluidic actuator using a micro-electromechanical semiconductor manufacturing process.

At present, in all fields of medicine, computer technology, printing, energy and other industries, products are developing towards refinement and miniaturization. Among them, micro pumps, sprayers, inkjet heads, industrial printing devices and other products are included Fluid delivery structure is its key technology.

With the rapid development of technology, the application of fluid delivery structure is becoming more and more diversified. For example, industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., and even the most popular wearable devices can be seen in its shadows. The traditional fluid delivery structure has gradually tended to miniaturize the device and maximize the flow rate.

In the prior art, although a micro-electromechanical process has been used to produce an integrally formed miniaturized fluid transport structure, the existing miniaturized fluid transport structure often has an actuating fluid compression ratio due to the shortcoming of the displacement of the thin film piezoelectric layer is too small The problem of insufficiency makes the transmission flow too small. Therefore, how to break through its technical bottleneck with innovative miniaturized structure is an important part of development.

The main objective of this case is to provide a method for manufacturing a microfluidic actuator, which is manufactured using a standardized micro-electromechanical semiconductor manufacturing process. The microfluidic actuator is manufactured using a semiconductor thin film to transmit fluid. Therefore, when the depth of the film cavity is controlled in a very shallow range, the fluid compression ratio when the microfluidic actuator is actuated can still be increased.

A broad implementation aspect of this case is a method of manufacturing a microfluidic actuator, which includes the following steps: 1. Provide a substrate to deposit a cavity layer, the substrate having a first surface and a second surface, through an oxidized material Deposited on the first surface of the substrate to form the cavity layer; 2. the cavity layer is deposited with a vibrating layer, which is deposited on the cavity layer through a nitride material to form the vibrating layer; 3. the vibration The layer-deposition etching active layer is first deposited on the vibration layer through a first metal material to form a lower electrode layer, and deposited on the lower electrode layer through a piezoelectric material to form a piezoelectric actuation layer, And then deposited on the piezoelectric actuation layer through a second metal material to form an upper electrode layer, and finally the actuation layer is defined by etching; 4. The substrate is etched with a plurality of flow channels, which are defined by etching An outlet flow channel and an inlet flow channel of the substrate; 5. The substrate deposits a mask layer to etch a plurality of connecting flow channels, which are first deposited on the second surface of the substrate and the outlet flow channel through the oxide material And the inlet flow channel to form the mask layer, and then expose the substrate through the perforation, and the substrate is etched at a low temperature to define an outflow connection flow channel, a plurality of first inflow connection flow channels, and a second Inflow connection flow channel; 6. The cavity layer is etched a storage chamber, the storage layer is defined by etching in the cavity layer, the storage chamber and the outflow connection flow channel, the plurality of An inflow connection flow channel and the second inflow connection flow channel are connected; 7. Provide an orifice layer and etch a plurality of flow channel openings, the orifice layer defines an outflow channel opening and an inflow channel opening by etching; 8. The orifice layer rolls the dry film and lithography to produce a plurality of channels of the first channel layer. The orifice layer is first rolled on the orifice layer through a dry film material to form the flow channel layer, and then The flow channel layer defines a flow channel communicating with the flow channel opening, a flow channel communicating with the flow channel opening, and a plurality of columnar structures in the flow channel layer through a lithography process; and 9. Crystal alignment and thermocompression bonding the flow channel layer, the flow channel layer is through the flip chip alignment and thermocompression bonding the flow channel layer to the second surface of the substrate, so that the orifice layer of the flow channel opening and The outlet flow channel of the substrate is connected, the inflow channel of the flow channel layer corresponds to the inlet flow channel of the substrate, and the inlet channel opening of the orifice layer communicates with the inlet flow channel of the substrate to form The overall structure of the microfluidic actuator.

Some typical embodiments embodying the features and advantages of this case will be described in detail in the description in the following paragraphs. It should be understood that this case can have various changes in different forms, and it does not deviate from the scope of this case, and the descriptions and illustrations therein are essentially used for explanation, not for limiting this case.

The microfluidic actuator in this case is used to convey fluid. Please refer to FIG. 1. In the embodiment of this case, the microfluidic actuator 100 includes: a substrate 1a, a cavity layer 1b, a vibrating layer 1c, and a lower electrode layer 1d 1. A piezoelectric actuation layer 1e, an upper electrode layer 1f, an orifice plate layer 1h, and a flow channel layer 1i, the manufacturing method of which is described in the following steps.

Please refer to FIGS. 2 and 3A. As shown in step S1, a substrate is provided to deposit a cavity layer, which is deposited on the first surface 11a of the substrate 1a through an oxide material to form the cavity layer 1b. In the embodiment of the present invention, the deposition process may be a physical vapor deposition process (PVD), a chemical vapor deposition process (CVD), or a combination of the two, but it is not limited thereto. In the embodiment of the present invention, the substrate 1a is a silicon substrate, and the oxidized material is a silicon dioxide material, but not limited thereto.

Please refer to FIG. 2 and FIG. 3A. As shown in step S2, the cavity layer deposits a vibration layer, which is deposited on the cavity layer 1b through a nitride material to form the vibration layer 1c. In the embodiment of the present invention, the nitride material is a silicon nitride material, but not limited to this.

Please refer to FIG. 2 and FIG. 3B. As shown in step S3, the vibrating layer is deposited and etched as the moving layer, which is first deposited on the vibrating layer 1c through a first metal material to form the lower electrode layer 1d, and then through a pressure Electrical material is deposited on the lower electrode layer 1d to form the piezoelectric actuation layer 1e, and then deposited on the piezoelectric actuation layer 1e through a second metal material to form the upper electrode layer 1f, and then the lower electrode layer 1d is etched , The piezoelectric actuation layer 1e and the upper electrode layer 1f to define the consistent actuation layer M of the required size. In the embodiment of the present invention, the first metal material is a platinum metal material or a titanium metal material, but not limited thereto. In the embodiment of the present invention, the second metal material is a gold metal material or an aluminum metal material, but it is not limited thereto. It is worth noting that in the embodiment of the present invention, the etching process may be a wet etching process, a dry etching process, or a combination of the two, but not limited thereto.

Please refer to FIGS. 2 and 3C. As shown in step S4, the substrate is etched with a plurality of flow channels, which are etched on the second surface 12a of the substrate 1a through a dry etching process to form an outlet flow channel 13a and an inlet flow channel 14a And, the outlet flow channel 13a and the inlet flow channel 14a have the same etching depth, and the etching depth is etched between the first surface 11a and the second surface 12a without penetrating the first surface 11a.

Please refer to FIG. 2 and FIGS. 3D to 3F. As shown in step S5, a mask layer is deposited on the substrate to etch a plurality of connection channels, which are first deposited on the second surface 12a of the substrate 1a through an oxide material and A mask layer 1g is formed in the outlet flow path 13a and the inlet flow path 14a, and then a first circulation hole 11g is formed in the outlet flow path 13a through a precision perforation process, and a plurality of second circulation holes are formed in the inlet flow path 14a 12g and a third circulation hole 13g. In the embodiment of the present invention, the diameter of the first circulation hole 11g is larger than the diameter of the third circulation hole 13g, and the diameter of the third circulation hole 13g is larger than the diameter of each plurality of second circulation holes 12g, but not limited thereto. The penetration depth of the first circulation hole 11g, the plurality of second circulation holes 12g, and the third circulation hole 13g is until it contacts the substrate 1a, so that the substrate 1a is exposed. In the embodiment of the present invention, the precision perforation process is an excimer laser processing process, but it is not limited thereto. It is worth noting that, since the first flow hole 11g, the plurality of second flow holes 12g, and the third flow hole 13g each have a depth, if forming through the lithography process, there will be a problem of difficulty in focusing, and excimer laser processing There is no such problem in the process.

Please refer to Figure 2, Figure 3F and Figure 4, as mentioned above, in the embodiment of the present invention, after forming the first circulation hole 11g, a plurality of second circulation holes 12g and the third circulation hole 13g, through the low temperature deep The etching process etches the portion of the substrate 1a corresponding to the first flow hole 11g, the plurality of second flow holes 12g, and the third flow hole 13g, thereby forming one of the outflow connection flow channels 15a of the substrate 1a and the plurality of first inflow connection flows The channel 16a and a second inflow connection channel 17a. The outflow connection flow channel 15a is formed by etching along the first flow hole 11g until it contacts the cavity layer 1b, and the plurality of first inflow connection flow channels 16a are respectively etched along the plurality of second flow holes 12g to the cavity layer 1b The structure up to the contact and the second inflow connection flow path 17a are formed along the third flow hole 13g until they are in contact with the cavity layer 1b. In the embodiment of the present invention, the low temperature deep etching process is a deep reactive ion etching (BOSCH Process), but not limited to this.

Please refer to FIG. 2, FIG. 3E and FIG. 6A. As mentioned above, in the embodiment of the present invention, the mask layer 1g uses an excimer laser processing process to form a first circulation hole 11g and a plurality of second circulation holes 12g And in the case of the third circulation hole 13g, in order to avoid the deviation of the perforation position or the perforation angle, a buffer distance e is reserved for the side walls of the outlet flow path 13a and the inlet flow path 14a. In addition, the deep reactive ion etching process (BOSCH Process) is only used to etch the silicon material of the substrate 1a, so the excimer laser processing process leaves an overetch depth t on the substrate 1a, which is conducive to the substrate 1a being reliable and easy An outflow connecting flow channel 15a, a plurality of first inflow connecting flow channels 16a, and a second inflow connecting flow channel 17a are formed by etching from the over-etching depth t. In the embodiment of the present invention, the minimum pore diameter of the outflow connecting flow channel 15a, the plurality of first inflow connecting flow channels 16a and the second inflow connecting flow channels 17a is 5 to 50 microns (μm), and the size of the pore size depends on the fluid properties It depends. Next, please refer to FIG. 3F and FIG. 6B, the outflow connection flow channel 15a, each of the first inflow connection flow channel 16a and the second inflow connection flow channel 17a have a perforation depth d and a perforation aperture s. The depth-to-width ratio d/s of the formed connection flow channel can reach 40. In the implementation of this processing process, considering the appropriate depth-to-width ratio d/s of the connection flow channel can prevent the high temperature generated by the processing from affecting the polarity distribution of the back-end piezoelectric material , Causing a depolarization reaction.

Please refer to FIG. 2 and FIG. 3G. As shown in step S6, the cavity layer etches a reservoir chamber. The cavity layer 1b etches a reservoir chamber 11b inside the cavity layer 1b through a wet etching process. That is, the first liquid flow hole 11g, the plurality of second flow holes 12g, and the third flow hole 13g flow in through the etching solution, and pass through the outflow connection flow channel 15a, the plurality of first inflow connection flow channels 16a, and the second inlet The flow connection flow channel 17a flows to the cavity layer 1b, and then the portion of the cavity layer 1b is etched and released to define the flow storage chamber 11b. Thereby, the storage chamber 11b is in communication with the outflow connection flow channel 15a, the plurality of first inflow connection flow channels 16a, and the second inflow connection flow channel 17a. In the embodiment of the present invention, the wet etching process uses hydrofluoric acid (HF) etching solution to etch the cavity layer 1b, but it is not limited thereto. In the embodiment of the present invention, the thickness of the cavity layer 1b is 1 to 5 micrometers (μm), but not limited to this. It is worth noting that when the reservoir chamber 11b is formed through the wet-time process, the mask layer 1g is also removed together. After forming the storage chamber 11b and removing the mask layer 1g, the outlet flow channel 13a of the substrate 1a communicates with the outflow connection flow channel 15a, and the inlet flow channel 14a communicates with the plurality of first inflow connection flow channels 16a and the first The two inlet flow channels 17a communicate with each other.

Please refer to FIG. 3G and FIG. 6C. In the embodiment of the present invention, the wet etching process is usually isotropic etching. In the embodiment of the present invention, when etching the liquid storage chamber 11b, the liquid storage chamber 11b has a cavity The depth r is equivalent to the thickness of the cavity layer 1b, and the side etching distance generated by the wet etching is r'. Therefore, the cavity depth r and the side etching distance r'are equal, which is an isotropic etching. Moreover, since the diameter of the outflow connecting flow channel 15a, each of the first inflow connecting flow channel 16a and the second inflow connecting flow channel 17a is only between 5 and 50 microns (μm), and the cavity depth r is only It is between 1 and 5 micrometers (μm), so an over-etching is required when etching the storage chamber 11b, so as to increase the etching time to remove the unetched material. In the embodiment of the present invention, when the wet etching process is used to form the liquid storage chamber 11b, an over-etching distance L is generated, and the over-etching distance L is greater than the side-etching distance r'to make the liquid storage chamber 11b within the range The silicon dioxide material was completely removed.

Please refer to FIG. 2, FIG. 3H and FIG. 3I, as shown in step S7, a plurality of flow channel openings are provided by etching an orifice layer, an outlet channel opening 11h and an inflow are etched in the orifice layer 1h through the etching process Crossing 12h. In the embodiment of the present invention, the etching process of the orifice layer 1h may be a wet etching process, a dry etching process or a combination of the two, but not limited thereto. In the embodiment of the present invention, the orifice layer 1h is a stainless steel material or a glass material, but not limited to this.

Please refer to Figure 2, Figure 3J, Figure 3K and Figure 5, as shown in step S8, the orifice layer rolls the dry film and the lithography to produce a plurality of channels of the first-class layer, first through a dry film material Rolling on the orifice layer 1h to form the flow channel layer 1i, and then forming an outflow channel 11i, an inflow channel 12i and a plurality of columnar structures 13i in the flow channel layer 1i through the lithography process, and forming an outflow channel 11i communicates with the outflow channel opening 11h of the orifice layer 1h, and the inflow channel 12i communicates with the inflow channel opening 12h of the orifice layer 1h. In the embodiment of the present invention, a plurality of columnar structures 13i are staggered and formed in the inflow channel 12i (as shown in FIG. 5) to filter impurities in the fluid. In the embodiment of the present invention, the dry film material is a photosensitive polymer dry film, but it is not limited thereto.

Please return to FIG. 1 and FIG. 2, as shown in step S9, the flip-chip alignment and hot-press bonding channel layer is to join the runner layer 1i to the substrate through a flip-chip alignment process and a hot-press process The second surface 12a of 1a forms the microfluidic actuator 100 in this case. Thereby, the outflow channel opening 11h of the orifice plate layer 1h communicates with the outlet flow channel 13a of the substrate 1a through the outflow channel 11i of the flow channel layer 1i; and the inflow channel opening 12h of the orifice plate layer 1h passes through the flow channel layer 1i The inflow channel 12i communicates with the inlet channel 14a of the substrate 1a.

It is worth noting that since the diameter of the third circulation hole 13g is larger than the diameter of each of the plurality of second circulation holes 12g, the plurality of first inflow connecting flow channels 16a are respectively corresponding to the positions of the plurality of second circulation holes 12g, And the second inflow connecting flow channel 17a is provided corresponding to the position of the third circulation hole 13g, so the diameter of the second inflow connecting flow channel 17a is larger than that of each of the plurality of first inflow connecting flow channels 16a. Furthermore, the second inlet connection flow channel 17a is disposed at an edge portion relative to the liquid storage chamber 11b, so the arrangement of the second inlet flow channel 17a facilitates the wet etching process of the liquid storage chamber 11b.

Please refer to FIGS. 7A and 7B. In the embodiment of the present invention, the specific operation mode of the microfluidic actuator 100 is to provide driving power with opposite phase charges to the upper electrode layer 1f and the lower electrode layer 1d to drive and control The vibration layer 1c is displaced up and down. As shown in FIG. 7A, when a positive voltage is applied to the upper electrode layer 1f and a negative voltage to the lower electrode layer 1d, the piezoelectric actuation layer 1e drives the vibration layer 1c to move away from the substrate 1a, whereby the external fluid The inlet channel opening 12h of the orifice layer 1h is sucked into the microfluidic actuator 100, and the fluid entering the microfluidic actuator 100 then sequentially passes through the inlet channel 12i of the channel layer 1i and the inlet channel 14a of the substrate 1a And the plurality of first inflow connection channels 16a and the second inflow connection channels 17a of the substrate 1a are finally collected in the storage chamber 11b of the cavity layer 1b. As shown in FIG. 7B, the electrical properties of the upper electrode layer 1f and the lower electrode layer 1d are then converted, and a negative voltage is applied to the upper electrode layer 1f and a positive voltage to the lower electrode layer 1d, so that the vibration layer 1c is displaced toward the substrate 1a. , The volume in the storage chamber 11b is compressed by the vibrating layer 1c, so that the fluid collected in the storage chamber 11b can sequentially pass through the outflow connection flow channel 15a of the substrate 1a, the outlet flow channel 13a and the flow channel of the substrate 1a The outflow channel 11i of the layer 1i is discharged from the outflow channel opening 11h of the orifice layer 1h to the outside of the microfluidic actuator 100 to complete the fluid transmission.

It is worth noting that when the microfluidic actuator 100 draws in external fluid, part of the external fluid will be drawn into the microfluidic actuator 100 from the outflow port 11h of the orifice layer 1h, but due to the outflow connection flow of the substrate 1a The position of the channel 15a corresponding to the piezoelectric actuation layer 1c is not the region with the largest amount of displacement, so the amount of external fluid drawn into the outlet port 11h is relatively small. When the microfluidic actuator 100 discharges fluid, the plurality of columnar structures 13i of the flow channel layer 1i will have a damping effect on the returned fluid. In addition, the second inflow connecting flow channel 17a of the substrate 1a corresponds to the piezoelectric actuation The edge position where the displacement of layer 1c is the smallest. Therefore, the amount of fluid discharged from the inlet port 12h is relatively small.

Furthermore, it is worth noting that the problem of excessive flow resistance of the plurality of first inflow connection channels 16a of the substrate 1a can be improved by adjusting the voltage waveform and lengthening the actuation time of the microfluidic actuator 100 to draw in external fluid.

This case provides a method for manufacturing a microfluidic actuator, which is mainly completed by a micro-electromechanical semiconductor process, and by applying driving power of different phase charges to the upper electrode layer and the lower electrode layer, the vibrating layer is displaced up and down, and then reached Fluid transmission. In this way, the microfluidic actuator can overcome the electrostatic force in a very shallow chamber structure, achieve the feasibility of transmitting fluid and produce a very large transmission efficiency in a very miniaturized structure, and has great industrial use value. Application.

This case may be modified by any person familiar with the technology, such as Shi Shisi, but none of them are as protected as the scope of the patent application.

100: microfluidic actuator 1a: substrate 11a: first surface 12a: second surface 13a: outlet flow channel 14a: inlet flow channel 15a: outflow connection flow channel 16a: first inflow connection flow channel 17a: second Inflow connection flow channel 1b: cavity layer 11b: storage chamber 1c: vibration layer 1d: lower electrode layer 1e: piezoelectric actuation layer 1f: upper electrode layer 1g: mask layer 11g: first circulation hole 12g: No. Second flow hole 13g: third flow hole 1h: orifice layer 11h: outflow channel opening 12h: inflow channel opening 1i: flow channel layer 11i: outflow channel 12i: inflow channel 13i: columnar structure e: buffer distance t: overerosion Depth d: Perforation depth s: Perforation aperture r: Cavity depth r': Side erosion distance L: Overetch distance M: Actuating layer S1~S9: Steps of manufacturing method of microfluidic actuator

Figure 1 is a schematic cross-sectional view of the microfluidic actuator of this case. Fig. 2 is a schematic flow chart of the manufacturing method of the microfluidic actuator in this case. Figures 3A to 3K are exploded schematic diagrams of the manufacturing steps of the microfluidic actuator in this case. Figure 4 is a schematic top view of the microfluidic actuator of this case. Figure 5 is a schematic diagram of a bottom view of the microfluidic actuator of the present case. FIGS. 6A to 6C are exploded schematic diagrams of the etching steps of the inflow connecting flow channel of the fluid actuator in this case. Figures 7A to 7B are schematic diagrams of the operation of the microfluidic actuator in this case.

S1~S9: Steps of manufacturing method of microfluidic actuator

Claims (21)

A method for manufacturing a microfluidic actuator includes the following steps: 1. Provide a substrate to deposit a cavity layer, the substrate having a first surface and a second surface, which is deposited on the first of the substrate through an oxide material On the surface, to form the cavity layer; 2. The cavity layer is deposited with a vibrating layer, which is deposited on the cavity layer through a nitride material to form the vibrating layer; 3. The vibrating layer is deposited by etching the moving layer, first A first metal material is deposited on the vibration layer to form a lower electrode layer, a piezoelectric material is deposited on the lower electrode layer to form a piezoelectric actuation layer, and a second metal material is deposited on the vibrating layer An upper electrode layer is formed on the piezoelectric actuation layer, and finally the actuation layer is defined by etching; 4. The substrate is etched with a plurality of flow channels, and an outlet flow channel and an inlet flow channel of the substrate are defined by etching 5. A mask layer is deposited on the substrate to etch a plurality of connecting flow channels, which are first deposited on the second surface of the substrate and the outlet flow channel and the inlet flow channel through the oxide material to form the mask Layer, and then expose the substrate through the perforation, and the substrate defines an outflow connection flow channel, a plurality of first inflow connection flow channels and a second inflow connection flow channel through low temperature deep etching; 6. The cavity layer etching A flow storage chamber is defined in the cavity layer through etching to define the flow storage chamber, the flow storage chamber and the outflow connecting flow channel, the plurality of first inflow connecting flow channels and the second inflow The connecting flow channels are connected; 7. Provide a hole plate layer to etch a plurality of flow channel openings, the hole plate layer defines an outlet flow channel opening and an inlet flow channel opening by etching; 8. The hole plate layer is rolled with dry film and lithography A plurality of channels of the flow channel layer are produced, and the orifice layer is first rolled on the orifice layer through a dry film material to form the flow channel layer, and then the flow channel layer is passed through the lithography process in the flow channel layer An outflow channel communicating with the outflow port, an inflow channel communicating with the inflow port, and a plurality of columnar structures are defined; and 9. Flip-chip alignment and thermocompression bonding of the flow channel layer, the flow The channel layer connects the flow channel layer to the second surface of the substrate through flip-chip alignment and hot pressing, so that the outlet channel opening of the orifice layer layer communicates with the outlet channel of the substrate. The inflow channel corresponds to the inlet channel of the substrate, and the inlet channel of the orifice layer communicates with the inlet channel of the substrate to form the overall structure of the microfluidic actuator. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application scope, wherein the outflow connecting flow channel communicates with the outlet flow channel, the plurality of first inflow connecting channel and the second inflow The connecting flow channel communicates with the inlet flow channel. The method of manufacturing a microfluidic actuator as described in item 1 of the patent application, wherein step 5 further includes the steps of: forming a first flow hole through the perforation in the outlet flow channel, and passing the perforation in the inlet flow A plurality of second circulation holes and a third circulation hole are formed in the track to expose the substrate. The method for manufacturing a microfluidic actuator as described in item 1 of the patent scope, wherein the low temperature deep etching is a deep reactive ion etching process. The method for manufacturing a microfluidic actuator as described in item 2 of the patent application, wherein step 6 is to etch the reservoir chamber inside the cavity layer through a hydrofluoric acid wet etching process. The method for manufacturing a microfluidic actuator as described in item 5 of the patent application range, wherein the hydrofluoric acid wet etching passes through the etching solution from the outflow connection flow channel, the plurality of first inflow connection flow channels and the first The two inflow connecting flow channels flow to the cavity layer, and release and remove the part of the cavity layer to define the storage chamber, thereby forming the storage chamber and the outflow connecting flow channel, the plurality of first The inlet flow channel and the second inlet flow channel are in communication. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application range, wherein the plurality of columnar structures are developed and formed in the inflow channel. The method for manufacturing a microfluidic actuator as described in item 1 of the patent scope, wherein the substrate is a silicon substrate. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application range, wherein the oxidizing material is a silicon dioxide material. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application, wherein the first metal material is a platinum metal material. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application range, wherein the first metal material is a titanium metal material. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application, wherein the second metal material is a gold metal material. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application scope, wherein the second metal material is an aluminum metal material. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application range, wherein the nitride material is a silicon nitride material. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application, wherein the orifice layer is made of stainless steel. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application, wherein the orifice plate layer is a glass material. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application, wherein the dry film material is a photosensitive polymer dry film. The method for manufacturing a microfluidic actuator as described in item 1 of the patent application scope, wherein driving power with different phase charges is provided to the upper electrode layer and the lower electrode layer to drive and control the vibration layer to generate up and down displacement So that the fluid is sucked from the inlet channel, flows through the plurality of first inlet connection channels and the second inlet channel to the storage chamber, and finally is squeezed through the outlet channel The outflow port is discharged to complete fluid transfer. The method for manufacturing a microfluidic actuator as described in item 18 of the patent application scope, wherein after fluid is sucked from the inlet channel, it sequentially passes through the inlet channel, the inlet channel, and the plurality of first inlet connection channels The flow channel connected to the second inlet flows into the storage chamber. The method for manufacturing a microfluidic actuator as described in item 18 of the patent application scope, wherein the fluid in the storage chamber is squeezed through the outflow connecting flow path, the outlet flow path and the outflow in sequence After the channel, it is discharged from the outlet of the outflow channel. The method for manufacturing a microfluidic actuator as described in item 18 of the patent application range, wherein a positive voltage is applied to the upper electrode layer and a negative voltage is applied to the lower electrode layer, so that the piezoelectric actuation layer drives the vibration layer away from When the direction of the substrate is displaced, the external fluid must be sucked into the microfluidic actuator from the inlet port, and the fluid entering the microfluidic actuator sequentially passes through the inlet channel, the inlet channel, and the A plurality of first inflow connecting flow channels and the second inflow connecting flow channels are collected in the storage chamber, and a negative voltage is applied to the upper electrode layer and a positive voltage to the lower electrode layer, the vibration layer faces Displacement in the direction close to the substrate causes the volume in the storage chamber to be compressed by the vibrating layer, and the fluid collected in the storage chamber can sequentially pass through the outflow connecting flow channel, the outlet flow channel, and the outflow channel. The outlet of the outflow channel is discharged outside the microfluidic actuator to complete the fluid transmission.

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