CN110905786B - Method for manufacturing micro-electromechanical pump - Google Patents
Method for manufacturing micro-electromechanical pump Download PDFInfo
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- CN110905786B CN110905786B CN201811080197.9A CN201811080197A CN110905786B CN 110905786 B CN110905786 B CN 110905786B CN 201811080197 A CN201811080197 A CN 201811080197A CN 110905786 B CN110905786 B CN 110905786B
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B45/00—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids
- F04B45/04—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids having plate-like flexible members, e.g. diaphragms
- F04B45/047—Pumps having electric drive
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B39/00—Component parts, details, or accessories, of pumps or pumping systems specially adapted for elastic fluids, not otherwise provided for in, or of interest apart from, groups F04B25/00 - F04B37/00
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- Reciprocating Pumps (AREA)
Abstract
A method of fabricating a microelectromechanical pump, comprising the steps of: (a) Providing a first substrate, thinning the first substrate to a first thickness and etching the first substrate to form at least one air inlet hole; (b) Providing a second substrate, thinning the second substrate to a second thickness, arranging a first oxide layer and a second oxide layer which are opposite to each other on the second substrate, and etching a through hole on the second substrate; (c) Combining the second substrate to the first substrate, wherein the first oxide layer is positioned between the first substrate and the second substrate, and the air inlet holes and the through holes are staggered; (d) Providing a third substrate, thinning the third substrate to a third thickness and etching at least one gas channel; (e) arranging a piezoelectric element on the third substrate; (f) And bonding the third substrate to the second substrate, wherein the second oxide layer is located between the second substrate and the third substrate, and the gas channel and the through hole are dislocated.
Description
[ technical field ] A method for producing a semiconductor device
The present invention relates to a method for manufacturing a micro-electromechanical pump, and more particularly, to a method for manufacturing a micro-electromechanical pump by a semiconductor process.
[ background of the invention ]
At present, in all fields, no matter in medicine, computer technology, printing, energy and other industries, products are developed towards refinement and miniaturization, wherein a pump mechanism for conveying fluid, which is included in products such as a micropump, a sprayer, an ink jet head, an industrial printing device and the like, is a key element thereof, so that how to break through the technical bottleneck of the pump mechanism by means of an innovative structure is an important content of development.
With the increasing development of science and technology, fluid delivery devices are being used more and more frequently, such as industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., and even recently, wearable devices are being viewed in the trail of heat dissipation, and thus, conventional pumps tend to be miniaturized and flow-maximized.
However, although the miniaturization of the pump is continuously improved and miniaturized, the pump cannot be reduced to the micron level by breaking through the millimeter level, and therefore how to reduce the pump to the micron level is the main subject of the present invention.
[ summary of the invention ]
The main objective of the present invention is to provide a method for manufacturing a nano-scale micro-electromechanical pump, so as to reduce the limitation of volume on the pump.
To achieve the above object, a method for manufacturing a micro-electromechanical pump in a broader aspect of the present invention includes the steps of:
(a) Providing a first substrate, thinning the first substrate to a first thickness and etching the first substrate to form at least one air inlet hole;
(b) Providing a second substrate, thinning the second substrate to a second thickness, arranging a first oxidation layer and a second oxidation layer opposite to each other on the second substrate, and etching a through hole on the second substrate;
(c) Combining the second substrate to the first substrate, wherein the first oxide layer is positioned between the first substrate and the second substrate, and the air inlet is staggered with the through hole;
(d) Providing a third substrate, thinning the third substrate to a third thickness and etching at least one gas channel;
(e) Arranging a piezoelectric component on the third substrate; and
(f) The third substrate is bonded to the second substrate, the second oxide layer is located between the second substrate and the third substrate, and the gas channel and the through hole are staggered.
[ description of the drawings ]
Fig. 1 is a schematic flow chart of a manufacturing method of the microelectromechanical pump.
Fig. 2 is a schematic cross-sectional view of the present mems pump.
Fig. 3 is a flow chart of the fabrication of the piezoelectric element of the mems pump.
Fig. 4A to 4C are schematic operation diagrams of the mems pump of the present invention.
Fig. 5 is a schematic diagram of the mems pump viewed from a top view of the third substrate.
[ detailed description ] A
Exemplary embodiments that embody features and advantages of this disclosure are described in detail below in the detailed description. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
The present application provides a method for manufacturing a mems pump, such that the manufactured mems pump 100 can be applied to the fields of medical technology, energy, computer technology, or printing, etc. for guiding a fluid and increasing or controlling the flow rate of the fluid. Referring to fig. 1 and fig. 2, fig. 1 is a schematic flow chart of a manufacturing method of the mems pump 100 of the present disclosure, and fig. 2 is a schematic cross-sectional view of the mems pump 100 manufactured by the manufacturing method of the mems pump 100 of the present disclosure; the process of the mems pump 100 of the present disclosure is summarized as the following steps, a, providing a first substrate 1, thinning the first substrate 1 to a first thickness and etching at least one air hole 11 on the first substrate 1; step b, providing a second substrate 2, thinning the second substrate 2 to a second thickness, disposing a first oxide layer 3 and a second oxide layer 5 opposite to each other on the second substrate 2, and etching a through hole on the second substrate 2; step c, bonding the second substrate 2 to the first substrate 1, wherein the first oxide layer 3 is located between the first substrate 1 and the second substrate 2, and the air inlet 11 is dislocated with the through hole 21; step d, providing a third substrate 4, thinning the third substrate 4 to a third thickness and etching at least one gas channel 41; e, arranging a piezoelectric element 6 on the third substrate 4; and step f, bonding the third substrate 4 to the second substrate 2, wherein the second oxide layer 5 is located between the second substrate 2 and the third substrate 4, and the gas channel 41 is misaligned with the through hole 21.
First, as shown in step a, a first substrate 1 is provided, the first substrate 1 is thinned to a first thickness (not shown) by grinding, etching, cutting, etc., the first substrate 1 has a first upper surface 12 and a first lower surface 13 after being thinned to the first thickness, then the first lower surface 13 of the first substrate 1 is dry etched or wet etched to form at least one air inlet hole 11, the air inlet hole 11 penetrates through the first upper surface 12 and the first lower surface 13 of the first substrate 1, and the aperture of the air inlet hole 11 can be tapered from the first lower surface 13 to the first upper surface 12.
As shown in the step (not shown), providing the second substrate 2, thinning the second substrate 2 to a second thickness (not shown) by grinding, etching, cutting, etc., wherein the second substrate 2 has a second upper surface 22 and a second lower surface 23 after being thinned to the second thickness, and then forming the first oxide layer 3 and the second upper surface 22 on the second lower surface 23 of the second substrate 2 to form the second oxide layer 5, and forming the through hole 21 in the center of the second substrate 2 by using an etching process, wherein the through hole 21 penetrates through the second upper surface 22 and the second lower surface 23 of the second substrate 2; in addition, step b further comprises forming at least one gas inlet channel 31 and a gas collecting chamber 32 on the first oxide layer 3 by etching process, wherein the gas inlet channel 31 and the gas collecting chamber 32 are communicated with each other, and step b further comprises forming a gas chamber 51 in the central region of the second oxide layer 5 by etching process.
As shown in step c, bonding the second substrate 2 to the first substrate 1, bonding the first oxide layer 3 on the second lower surface 23 of the second substrate 2 to the first upper surface 12 of the first substrate 1, so that the first oxide layer 3 is located between the first substrate 1 and the second substrate 2, and at this time, the through hole 21 on the second substrate 2 and the air inlet hole 11 of the first substrate 1 are disposed in a staggered manner; the number of the inlet channels 31 of the first oxide layer 3 is the same as that of the inlet holes 11 of the first substrate 1, and the inlet channels 31 are corresponding to each other in position, one end of each inlet channel 31 is connected to the corresponding inlet hole 13 and is communicated with the corresponding inlet hole 11, and the other end of each inlet channel 31 is communicated with the converging chamber 32, so that the gas can enter from the corresponding inlet hole 11 of the first substrate 1 and then converge in the converging chamber 32 through the corresponding inlet channel 31.
In step d, a third substrate 4 is provided, and the third substrate 4 is also thinned to a third thickness by grinding, etching or cutting, so that the third substrate 4 has a third upper surface 42 and a third lower surface 43, and a plurality of gas channels 41 are formed by etching on the third substrate 4, the gas channels 41 penetrate through the third upper surface 42 and the third lower surface 43 of the third substrate 4 and define a vibrating portion 44, an outer peripheral portion 45 and three portions of a plurality of connecting portions 46 (as shown in fig. 5), which are respectively the vibrating portion 44 surrounded by the gas channels 41, the outer peripheral portion 45 surrounding the outer periphery of the gas channels 41, and the connecting portions 46 between the gas channels 41 and between the vibrating portion 44 and the outer peripheral portion 45. In the present embodiment, the number of the gas passages 41 is 4, and the number of the connection portions 46 is also 4; referring again to step e, a piezoelectric element 6 is formed on the third upper surface 41 of the third substrate 4.
Finally, as shown in step f, the third lower surface 43 of the third substrate 4 is bonded to the second oxide layer 5 on the second upper surface 22 of the second substrate 2, the second oxide layer 5 is located between the second substrate 2 and the third substrate 4, and the through hole 21 of the second substrate 2 and the gas channel 41 of the third substrate 4 are disposed in a staggered manner, wherein the through hole 21 of the second substrate 2 and the gas chamber 51 of the second oxide layer 5 are communicated with each other, and the gas channel 41 of the third substrate 4 and the gas chamber 51 are communicated with each other, so that the micro-electromechanical pump 100 reaching the micron scale can be manufactured after the above steps are completed.
Referring to fig. 2 and 3, the process flow of forming the piezoelectric element 6 on the third substrate 4 in step e is summarized as follows: step e1, depositing a lower electrode layer 61; step e2, depositing a piezoelectric layer 62 on the lower electrode layer 61; e3, depositing an insulating layer 63 on a partial area of the piezoelectric layer 62 and a partial area of the lower electrode layer 61; step e3, depositing an upper electrode layer 64 on the area of the piezoelectric layer 62 where the insulating layer 63 is not deposited, wherein a portion of the upper electrode layer 64 is electrically connected to the piezoelectric layer 62.
As mentioned above, referring to step e1, the lower electrode layer 61 is formed on the third upper surface 42 of the third substrate 4 by physical or chemical vapor deposition such as sputtering, evaporation and the like, and then, as shown in step e2, the piezoelectric layer 62 is formed on the lower electrode layer 61 by physical or chemical vapor deposition such as sputtering, evaporation and the like, or the piezoelectric layer 62 is formed on the lower electrode layer 61 by deposition by sol-gel (sol-gel) process, and the two are electrically connected through the contact area, and the area of the piezoelectric layer 62 is smaller than the area of the lower electrode layer 61, so that the piezoelectric layer 62 cannot completely shield the lower electrode layer 61; step e3 is performed again, the insulating layer 63 is deposited on the partial area of the piezoelectric layer 62 and the area of the lower electrode layer 61 not shielded by the piezoelectric layer 62 by physical or chemical vapor deposition such as sputtering, evaporation and the like; finally, step e4 is performed, physical or chemical vapor deposition such as sputtering and evaporation is performed on the insulating layer 63 and another partial area of the piezoelectric layer 62 where the insulating layer 63 is not deposited to form the upper electrode layer 64, so that the upper electrode layer 64 is electrically connected to the piezoelectric layer 62, and the insulating layer 63 is used to block the space between the upper electrode layer 64 and the lower electrode layer 61, thereby preventing the short circuit caused by the electrical connection between the upper electrode layer 64 and the lower electrode layer 61, wherein the lower electrode layer 61 and the upper electrode layer 64 may extend a conductive pin (not shown) outward by a fine pitch wire bonding packaging technology for receiving an external driving signal and a driving voltage.
The first substrate 1, the second substrate 2, and the third substrate 4 may be substrates of the same material, in this embodiment, all of the three are silicon chips generated by a crystal growth process, and the crystal growth process may be a polysilicon growth control technology, which means that the first substrate 1, the second substrate 2, and the third substrate 4 are all polysilicon chips, in addition, the first thickness of the thinned first substrate 1 is greater than the third thickness of the thinned third substrate 4, and the third thickness of the thinned third substrate 4 is greater than the second thickness of the thinned second substrate 2.
The first thickness is between 150 and 200 micrometers, the second thickness is between 2 and 5 micrometers, and the third thickness is between 10 and 20 micrometers.
In addition, the thickness of the first oxide layer 3 is greater than that of the second oxide layer 5, in the embodiment, the thickness of the first oxide layer 3 is between 10 and 20 micrometers, the thickness of the second oxide layer 5 is between 0.5 and 2 micrometers, and the first oxide layer 3 and the second oxide layer 5 are formed by etchingThe oxide layer 5 may be a thin film of the same material, and the first oxide layer 3 and the second oxide layer 5 may be silicon dioxide (SiO) 2 ) The thin film can be formed by sputtering, high temperature oxidation, etc.
As shown in fig. 2, the micro-electromechanical pump 100 is formed by laminating a first substrate 1, a second substrate 2 having a first oxide layer 3 and a second oxide layer 5, and a third substrate 4, wherein the number of the gas inlet holes 11 on the first substrate 1 is 2, and the 2 gas inlet holes 11 are tapered, and when the micro-electromechanical pump is bonded to the second substrate 2, the first oxide layer 3 on the second lower surface 23 of the second substrate 2 is connected to the first substrate 1, the positions and the numbers of the gas inlet channels 31 of the first oxide layer 3 are corresponding to the gas inlet holes 11 of the first substrate 1, so that in this embodiment, the gas inlet channels 31 are also 2, one end of each of the 2 gas inlet channels 31 is connected to each of the 2 gas inlet holes 11, and the other ends of the 2 gas inlet channels 31 are connected to the collecting chamber 32, so that the gas enters from the 2 gas inlet channels 31 and is collected in the collecting chamber 32, and the through holes 21 of the second substrate 2 are connected to the collecting chamber 32, and the gas inlet holes 4 of the second substrate 2 is connected to the collecting chamber 51, so that the gas inlet channels 21 of the second substrate 2 and the gas inlet channels 51 of the second substrate 2 are connected to the gas inlet channels 41, and the gas channels 51 of the second substrate 2, and the gas outlet of the gas channel 5, so that the gas channel 51 is connected to the gas channel 51 of the gas channel 51.
As mentioned above, the gas channel 41 of the third substrate 4 divides the third substrate 4 into three parts, namely, a vibration portion 44 located at the center of the gas channel 41, an outer peripheral portion 45 located around the gas channel 41, and a connection portion 46 located between the gas channels 41 and elastically connecting the vibration portion 44 and the outer peripheral portion 45, wherein the vibration portion 44 corresponds to the gas chamber 51 of the second oxide layer 5, and the piezoelectric element 6 is located in the vibration portion 44, so that when the piezoelectric element 6 drives the vibration portion 44 to vibrate and displace, the volume of the gas chamber 51 is compressed or expanded to generate the gas flow.
The periphery of the through hole 21 of the second substrate 2 is a resonance portion 24, the periphery of the resonance portion 24 is a fixing portion 25, and the resonance portion 24 corresponds to the confluence chamber 32 of the first oxide layer 3 and the gas chamber 51 of the second oxide layer 5, so that the resonance portion 24 can be displaced between the confluence chamber 32 and the gas chamber 51.
Referring to fig. 2 and fig. 4A to 4C, fig. 4A to 4C are schematic operation diagrams of the mems pump manufactured by the manufacturing method of the present disclosure; referring to fig. 4A, when the lower electrode layer 61 and the upper electrode 64 of the piezoelectric element 6 receive the driving voltage and the driving signal (not shown) transmitted from the outside, and transmits it to the piezoelectric layer 62, at which point the piezoelectric layer 62 begins to deform due to the piezoelectric effect after receiving the driving voltage and driving signal, the variation and frequency of the deformation are controlled by the driving voltage and the driving signal, and the piezoelectric layer 62 begins to deform by the driving voltage and the driving signal, so as to drive the vibration portion 44 of the third substrate 4 to start to displace, and the piezoelectric element 6 drives the vibration portion 44 to vibrate and displace towards a first direction, so as to pull the distance between the second oxide layer 5 and the piezoelectric element, wherein the first direction is the vibration direction of the vibration portion 44 away from the second oxide layer 5, so that the volume of the gas chamber 51 of the second oxide layer 5 is increased, a negative pressure is formed in the gas chamber 51, and the gas outside the microelectromechanical pump 100 is sucked into the gas inlet 11, and introduced into the bus chamber 32 for the first oxide layer 3 and again as shown in figure 4B, when the vibration part 44 is displaced by the piezoelectric element 6, the resonance part 24 of the second substrate 2 is displaced in the first direction by the resonance principle, and the resonance part 24 is displaced toward the first direction, the space of the gas chamber 51 is compressed, and the gas in the gas chamber 51 is pushed toward the gas channel 41 of the third substrate 4, so that the gas can be discharged through the gas channel 41, and at the same time, when the resonance part 24 moves towards the first direction to compress the gas chamber 51, the volume of the confluence chamber 32 is increased due to the displacement of the resonance part 24, so that negative pressure is formed inside the confluence chamber, and air outside the MEMS pump 100 is continuously sucked into the confluence chamber through the air inlet 11; finally, as shown in fig. 4C, the piezoelectric element 6 drives the vibration portion 44 of the third substrate 4 to vibrate and displace towards a second direction, wherein the second direction is a vibration direction in which the vibration portion 44 moves towards the second oxide layer 5, and the first direction and the second direction are opposite, so that the resonance portion 24 of the second substrate 2 is also driven by the vibration portion 44 to displace towards the second direction, the gas in the synchronous compression bus chamber 32 moves towards the gas chamber 51 through the through holes 21 thereof, the gas outside the micro-electromechanical pump 100 enters temporarily through the gas inlet 11, and the gas in the gas chamber 51 pushes into the gas channel 41 of the third substrate 4, so that the gas in the gas channel 41 is discharged out of the micro-electromechanical pump 100, and when the subsequent piezoelectric element 6 resumes driving the vibration portion 44 to displace towards the first direction, the volume of the gas chamber 51 is greatly increased, so that the gas is sucked into the gas chamber 51 with a higher suction force (as shown in fig. 4A), thereby repeating the operation actions of fig. 4A to fig. 4C, that the piezoelectric element 6 continuously drives the vibration portion 44 to drive the vibration portion 24 to displace synchronously and the vibration portion 24 to change the pressure of the micro-electromechanical pump 100 to complete the vibration and discharge of the micro-electromechanical pump.
In summary, the present disclosure provides a method for manufacturing a micro electromechanical pump, which mainly uses a semiconductor process to complete a structure of the micro electromechanical pump, so as to further reduce the pump volume, make the pump more light, thin and short, and reach the size of micron scale, and reduce the problem that the past pump volume is too large to reach the limit of micron scale size, thereby having great industrial utility value.
Various modifications may be made by those skilled in the art without departing from the scope of the invention as defined in the appended claims.
[ description of symbols ]
100: MEMS pump
1: first substrate
11: air intake
12: a first upper surface
13: a first lower surface
2: second substrate
21: perforation
22: second upper surface
23: second lower surface
24: resonance part
25: fixing part
3: first oxide layer
31: air inlet flow channel
32: confluence chamber
4: third substrate
41: gas channel
42: third upper surface
43: third lower surface
44: vibrating part
45: outer peripheral portion
46: connecting part
5: second oxide layer
51: gas chamber
6: piezoelectric component
61: lower electrode layer
62: piezoelectric layer
63: insulating layer
64: upper electrode layer
a to f: method for manufacturing a microelectromechanical pump
e1 to e4: steps of a method of manufacturing a piezoelectric component
Claims (10)
1. A method of fabricating a microelectromechanical pump, comprising the steps of:
(a) Providing a first substrate, thinning the first substrate to a first thickness and etching the first substrate to form at least one air inlet hole, wherein the air inlet hole of the first substrate is tapered by isotropic etching;
(b) Providing a second substrate, thinning the second substrate to a second thickness, arranging a first oxidation layer and a second oxidation layer opposite to each other on the second substrate, etching a gas chamber on the second oxidation layer, and etching a through hole on the second substrate;
(c) Bonding the second substrate to the first substrate, wherein the first oxide layer is positioned between the first substrate and the second substrate, and the air inlet hole is staggered with the through hole;
(d) Providing a third substrate, thinning the third substrate to a third thickness and etching a plurality of gas channels;
(e) Disposing a piezoelectric element on the third substrate by a deposition process, further comprising:
(e1) Depositing a lower electrode layer;
(e2) Depositing a piezoelectric layer on the lower electrode layer;
(e3) Depositing an insulating layer on the piezoelectric layer and the bottom electrode; and
(e4) Depositing an upper electrode layer on the piezoelectric layer in the area where the insulating layer is not deposited, wherein the upper electrode layer is electrically connected with the piezoelectric layer; and
(f) The third substrate is bonded to the second substrate, the second oxide layer is located between the second substrate and the third substrate, and the gas channel and the through hole are staggered.
2. The method of claim 1, wherein step (b) further comprises etching at least one gas inlet channel and a manifold chamber in the first oxide layer, the gas inlet channel communicating between the manifold chamber and the gas inlet.
3. The method of claim 1 wherein step (e) is performed by a physical vapor deposition process.
4. The method of claim 1 wherein step (e) is performed by a chemical vapor deposition process.
5. The method of claim 1 wherein step (e 2) is performed by a sol-gel process.
6. The method of claim 1, wherein the first substrate, the second substrate and the third substrate are thinned to the first thickness, the second thickness and the third thickness respectively by a polishing process.
7. The method of claim 1, wherein the first thickness is greater than the third thickness, and the third thickness is greater than the second thickness.
8. The method according to claim 1, wherein the first oxide layer has a thickness greater than that of the second oxide layer.
9. The method of claim 1, wherein the first substrate, the second substrate and the third substrate are silicon chips formed by a crystal growth process.
10. The method of claim 9 wherein said growth process is a polysilicon growth control technique.
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| CN201811080197.9A CN110905786B (en) | 2018-09-17 | 2018-09-17 | Method for manufacturing micro-electromechanical pump |
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| CN201811080197.9A CN110905786B (en) | 2018-09-17 | 2018-09-17 | Method for manufacturing micro-electromechanical pump |
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| CN110905786B true CN110905786B (en) | 2023-01-10 |
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| CN2558784Y (en) * | 2002-05-08 | 2003-07-02 | 财团法人工业技术研究院 | Hydrogel actuated micropump |
| CN1179127C (en) * | 2002-09-03 | 2004-12-08 | 吉林大学 | Multiple-cavity piezoelectric film driven pump |
| CN100365278C (en) * | 2005-06-04 | 2008-01-30 | 胡军 | Prezoelectric ceramics sheet for mfg. mini-pump and mini air pump |
| CN102983772A (en) * | 2011-09-05 | 2013-03-20 | 研能科技股份有限公司 | Drive circuit and applicative piezoelectric actuating pump thereof |
| CN105984830A (en) * | 2015-02-15 | 2016-10-05 | 水木智芯科技（北京）有限公司 | Manufacturing method of integrated circuit fused MEMS sensor |
| CN206558493U (en) * | 2017-01-05 | 2017-10-13 | 研能科技股份有限公司 | Three-dimensional chip integrated circuit cooling system |
| CN106711320A (en) * | 2017-01-09 | 2017-05-24 | 清华大学 | Ultrasonic fingerprint collecting device and preparation method thereof |
| TWM553479U (en) * | 2017-08-31 | 2017-12-21 | Microjet Technology Co Ltd | Actuating-sensing module |
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