CN110905789A - MEMS pump - Google Patents
MEMS pump Download PDFInfo
- Publication number
- CN110905789A CN110905789A CN201811100575.5A CN201811100575A CN110905789A CN 110905789 A CN110905789 A CN 110905789A CN 201811100575 A CN201811100575 A CN 201811100575A CN 110905789 A CN110905789 A CN 110905789A
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- substrate
- thickness
- oxide layer
- pump
- gas
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B45/00—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids
- F04B45/04—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids having plate-like flexible members, e.g. diaphragms
- F04B45/047—Pumps having electric drive
Abstract
A microelectromechanical pump comprising: the first substrate is provided with an air inlet hole, and the thickness of the first substrate is a first thickness; the first oxide layer is superposed with the first substrate and is provided with an air inlet channel and a confluence chamber, one end of the air inlet channel is communicated with the confluence chamber, and the other end of the air inlet channel is communicated with the air inlet; the second substrate is stacked on the first oxide layer, the thickness of the second substrate is the second thickness, the second substrate is provided with a through hole, and the through hole is staggered with the air inlet of the first substrate; the second oxide layer is stacked on the second substrate, and a gas cavity is formed in the center of the second oxide layer in a concave mode; the third substrate is superposed on the second oxidation layer, the thickness of the third substrate is the third thickness, the third substrate is provided with a gas channel, and the gas channel and the through hole of the second substrate are staggered; and a piezoelectric assembly stacked on the third substrate.
Description
[ technical field ] A method for producing a semiconductor device
The present invention relates to a micro-electromechanical pump, and more particularly, to a micro-electromechanical pump manufactured by a semiconductor process.
[ background of the invention ]
At present, in all fields, no matter in medicine, computer technology, printing, energy and other industries, products are developed toward refinement and miniaturization, wherein a pump mechanism for conveying fluid included in a product such as a micropump, a sprayer, an ink jet head, an industrial printing device and the like is a key element thereof, so that how to break through the technical bottleneck of the pump mechanism by means of an innovative structure is an important content of development.
With the increasing development of technology, fluid delivery devices are being used more and more frequently, such as industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., and even recently, the image of a wearable device is seen in hot-door wearable devices, which means that conventional pumps have been gradually becoming smaller and larger.
However, although the miniaturization of the pump is continuously improved and miniaturized, the pump cannot be reduced to the micron level by breaking through the millimeter level, and therefore how to reduce the pump to the micron level is the main subject of the present invention.
[ summary of the invention ]
The present invention is directed to a micro-electromechanical pump, which is a micro-electromechanical pump manufactured by semiconductor process to reduce the volume limitation of the pump.
To achieve the above object, a microelectromechanical pump according to a broader aspect of the present invention comprises: a first substrate manufactured by a semiconductor process and manufactured to have a first thickness by a thinning process, and formed to have at least one air inlet hole by photolithography; a first oxide layer formed by semiconductor process and superposed on the first substrate, and formed by photoetching process to have at least one gas inlet channel and a converging chamber, wherein one end of the gas inlet channel is communicated with the converging chamber, and the other end is communicated with the gas inlet; a second substrate, which is manufactured by a semiconductor process and a thinning process, has a second thickness, is superposed on the first oxide layer, and is manufactured by photoetching to form a through hole, the through hole is staggered with the air inlet of the first substrate, and the through hole is communicated with the confluence chamber of the first oxide layer; a second oxide layer formed by sputtering semiconductor and stacked on the second substrate, and a gas chamber with a central recess formed by photoetching; a third substrate, which is manufactured by a semiconductor process and a thinning process, has a third thickness, is superposed on the second oxide layer, and is manufactured by photoetching to form a plurality of gas channels, wherein the gas channels are staggered with the through holes of the second substrate, and the gas chambers of the second oxide layer are respectively communicated with the through holes of the second substrate and the gas channels of the third substrate; and a piezoelectric element formed by semiconductor process and stacked on the third substrate.
[ description of the drawings ]
Fig. 1 is a schematic cross-sectional view of the microelectromechanical pump.
Fig. 2A to 2C are schematic operation diagrams of the micro electromechanical pump in fig. 1.
Fig. 3 is a schematic diagram of the mems pump of fig. 1 viewed from a top view of a third substrate.
[ detailed description ] embodiments
Exemplary embodiments that embody features and advantages of this disclosure are described in detail below in the detailed description. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
The micro-electromechanical pump 100 can be applied to the fields of medicine and biotechnology, energy, computer science and technology, printing and the like, and is used for guiding fluid and increasing or controlling the flow rate of the fluid. Referring to fig. 1, fig. 1 is a schematic view of a micro electromechanical pump 100 of the present disclosure. The micro-electromechanical pump 100 of the present embodiment includes: a first substrate 1, a second substrate 2, a first oxide layer 3, a third substrate 4, a second oxide layer 5 and a piezoelectric element 6, wherein the first substrate 1, the first oxide layer 3, the second substrate 2, the second oxide layer 5, the third substrate 4 and the piezoelectric element 6 are sequentially arranged, stacked and combined to form a whole.
The first substrate 1, the second substrate 2, and the third substrate 4 may be substrates of the same material, and in this embodiment, all of them are silicon chips produced by a crystal growth process of a semiconductor process, and the crystal growth process may be a polysilicon generation technology, meaning that the first substrate 1, the second substrate 2, and the third substrate 4 are silicon chip substrates of a polysilicon, and the thickness of the first substrate 1 is a first thickness, the thickness of the second substrate 2 is a second thickness, the thickness of the third substrate 4 is a third thickness, the first thickness of the first substrate 1 produced by a thinning process can be greater than the third thickness of the third substrate 4 produced by a thinning process, and the third thickness of the third substrate 4 produced by a thinning process can be greater than the second thickness of the second substrate 2 produced by a thinning process. The substrate thinning process may achieve a desired thickness of the substrate by, for example, grinding, etching, cutting, etc., such that the first thickness is between 150 and 200 microns thick, the second thickness is between 2 and 5 microns thick, and the third thickness is between 10 and 20 microns thick.
The first oxide layer 3 and the second oxide layer 5 may be films of the same material, and in the embodiment, the first oxide layer 3 and the second oxide layer 5 are silicon dioxide (SiO)2) The thin film, the first oxide layer 3 and the second oxide layer 5 can be formed by sputtering or high temperature oxidation. The thickness of the first oxide layer 3 is larger than that of the second oxide layer 5, in this embodiment, the first oxide layerThe thickness of the oxide layer 3 is between 10 and 20 microns, and the thickness of the second oxide layer 5 is between 0.5 and 2 microns.
The first substrate 1 is manufactured by a semiconductor crystal growth process to form a first upper surface 12 and a first lower surface 13, and is photo-etched to form at least one gas inlet hole 11, and each gas inlet hole 11 penetrates from the first lower surface 13 to the first upper surface 12, in this embodiment, the number of the gas inlet holes 11 is 2, but not limited thereto, and the gas inlet holes 11 are tapered from the first lower surface 13 to the first upper surface 12 in order to enhance the gas inlet effect.
The first oxide layer 3 is formed by a semiconductor process such as sputtering or high-temperature oxidation and is stacked on the first upper surface 12 of the first substrate 1, the first oxide layer 3 is formed by a photolithography etching process and has at least one inlet channel 31 and a converging chamber 32, the inlet channels 31 correspond to the inlet holes 11 of the first substrate 1 in number and position, therefore, in the present embodiment, the number of the inlet channels 31 is also 2, one end of each of the 2 inlet channels 31 is respectively communicated to the 2 inlet holes 11 of the first substrate 1, and the other end of each of the 2 inlet channels 31 is communicated to the converging chamber 32, so that the gas is respectively entered from the 2 inlet holes 11, and then is converged into the converging chamber 32 through the corresponding inlet channel 31.
The second substrate 2 is formed with a second upper surface 22, a second lower surface 23, a resonance portion 24 and a fixing portion 25 by a semiconductor crystal growth process, and is formed with a through hole 21 by photolithography, the through hole 21 is formed at the center of the second substrate 2 and penetrates through the second upper surface 22 and the second lower surface 23, the periphery of the through hole 21 is the resonance portion 24, and the periphery of the resonance portion 24 is the fixing portion 25, wherein the second lower surface 23 of the second substrate 2 is stacked on the first oxide layer 3, the through hole 21 of the second substrate 2 vertically corresponds to and communicates with the collecting chamber 32 of the first oxide layer 3, and the through hole 21 and the air inlet 11 of the first substrate 1 are disposed in a staggered manner.
The second oxide layer 5 is formed by a semiconductor process such as sputtering or high temperature oxidation and stacked on the second upper surface 22 of the second substrate 2, and the second oxide layer 5 is formed by a gas chamber 51 with a central concave region through a photolithography etching process, the gas chamber 51 vertically corresponds to the through hole 21 of the second substrate 2 and the resonance portion 24 of the through hole 21, so that the gas can enter the gas chamber 51 through the through hole 21 and the resonance portion 24 can move in the gas chamber 51.
The third substrate 4 is formed with a third upper surface 42 and a third lower surface 43 by a semiconductor crystal growth process, and is formed with a plurality of gas channels 41 penetrating through the third upper surface 42 and the third lower surface 43 by photolithography, and three portions (as shown in fig. 3) defining a vibrating portion 44, an outer peripheral portion 45 and a plurality of connecting portions 46, respectively, the vibrating portion 44 surrounded by the gas channels 41, the outer peripheral portion 45 surrounding the outer periphery of the gas channels 41, and the connecting portions 46 between the gas channels 41 and connecting between the vibrating portion 44 and the outer peripheral portion 45. In the present embodiment, the number of the gas passages 41 is 4, and the number of the connection portions 46 is also 4.
Referring to fig. 1 again, the piezoelectric element 6 includes a lower electrode layer 61, a piezoelectric layer 62, an insulating layer 63 and an upper electrode layer 64, the piezoelectric element 6 can be formed by a thin film deposition process such as Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD) or a sol-gel process (sol-gel) process, so in this embodiment, the upper electrode layer 64 and the lower electrode layer 61 are formed by a thin film deposition process such as Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD), the lower electrode layer 61 is stacked on the third upper surface 42 of the third substrate 4 and located on the vibrating portion 44 of the third substrate 4, the piezoelectric layer 62 can be formed by a thin film deposition process or a sol-gel process (sol-gel), the piezoelectric layer 62 is stacked on the lower electrode layer 61, and the two layers are electrically connected through a contact region thereof. In addition, the area of the piezoelectric layer 62 is smaller than that of the lower electrode layer 61, so that the piezoelectric layer 62 cannot completely shield the lower electrode layer 61, the insulating layer 63 is formed on a partial area of the piezoelectric layer 62 and an area of the lower electrode layer 61 not shielded by the piezoelectric layer 62, and finally the upper electrode layer 64 is formed on a partial area of the insulating layer 63 and a partial area of the piezoelectric layer 62 not shielded by the insulating layer 63, so that the upper electrode layer 64 can be electrically connected with the piezoelectric layer 62 in a contact manner, and the insulating layer 63 is used for isolating the upper electrode layer 64 and the lower electrode layer 61, thereby preventing the upper electrode layer 64 and the lower electrode layer 61 from being.
Referring to fig. 1, the first oxide layer 3 is located between the first upper surface 12 of the first substrate 1 and the second lower surface 23 of the second substrate 2, the second oxide layer 5 is located between the second upper surface 22 of the second substrate 2 and the third lower surface 43 of the third substrate 4, the piezoelectric element 6 is located on the third upper surface 42 of the third substrate 4, the piezoelectric element 6 is opposite to the second oxide layer 5 located on the third lower surface 43, and the piezoelectric element 6 is further opposite to the gas chamber 51 of the second oxide layer 5 located on the third lower surface 43, the first oxide layer 3 located between the first substrate 1 and the second substrate 2 has its internal gas inlet channel 31 communicated with the gas inlet 11 of the first substrate 1, the confluence chamber 32 is communicated with the through hole 21 of the second substrate 2, so that the gas enters from the gas inlet 11 of the first substrate 1, is converged in the confluence chamber 32 through the gas channel 31, and then flows upward through the through hole 21, the gas chamber 51 of the second oxide layer 5 located between the second substrate 2 and the third substrate 4 is communicated with the through hole 21 of the second substrate 2 and the gas channel 41 of the third substrate 4, so that the gas is discharged upwards from the gas channel 41 after entering the gas chamber 51 from the through hole 21, thereby achieving the effect of gas transmission.
Please refer to fig. 2A to 2C, which are schematic operation diagrams of the micro-electromechanical pump 100 of micron scale manufactured by semiconductor process; referring to fig. 2A, when the lower electrode layer 61 and the upper electrode 64 of the piezoelectric element 6 receive the driving voltage and the driving signal (not shown) transmitted from the outside, and transmits it to the piezoelectric layer 62, and the piezoelectric layer 62 starts to deform due to the piezoelectric effect after receiving the driving voltage and the driving signal, the variation and frequency of the deformation are controlled by the driving voltage and the driving signal, and the piezoelectric layer 62 begins to deform by the driving voltage and the driving signal, so as to drive the vibration portion 44 of the third substrate 4 to start to displace, and the piezoelectric element 6 drives the vibration part 44 to move upwards to pull away the distance between the vibration part and the second oxide layer 5, thus, the volume of the gas chamber 51 of the second oxide layer 5 is increased, so as to form a negative pressure in the gas chamber 51, so as to suck the gas outside the micro-electromechanical pump 100 into the gas chamber from the gas inlet 11 and guide the gas into the converging chamber 32 of the first oxide layer 3; as shown in fig. 2B, when the vibrating portion 44 is pulled by the piezoelectric element 6 to move upward, the resonant portion 24 of the second substrate 2 moves upward due to the effect of the resonance principle, and when the resonant portion 24 moves upward, the space of the gas chamber 51 is compressed, and the gas in the gas chamber 51 is pushed to move toward the gas channel 41 of the third substrate 4, so that the gas can be discharged upward through the gas channel 41, and meanwhile, when the resonant portion 24 moves upward to compress the gas chamber 51, the volume of the confluence chamber 32 is increased due to the displacement of the resonant portion 24, so that a negative pressure is formed inside the confluence chamber, and the gas outside the micro-electromechanical pump 100 can be continuously sucked into the resonance chamber through the gas inlet 11; finally, as shown in fig. 2C, when the piezoelectric element 6 drives the vibrating portion 44 of the third substrate 4 to move downward, the resonant portion 24 of the second substrate 2 is also driven by the vibrating portion 44 to move downward, the gas in the synchronously compressed converging chamber 32 moves toward the gas chamber 51 through the through hole 21, the gas outside the micro-electromechanical pump 100 enters from the gas inlet 11, the gas in the gas chamber 51 pushes into the gas channel 41 of the third substrate 4 to be discharged outward, and when the subsequent piezoelectric element 6 returns to drive the vibrating portion 44 to move upward, the volume of the gas chamber 51 is greatly increased, and the gas is sucked into the gas chamber 51 with higher suction force (as shown in fig. 2A), so that the operation actions of fig. 2A to 2C are repeated, that the vibrating portion 44 is continuously driven by the piezoelectric element 6 to move upward and the resonant portion 24 is synchronously linked to move upward and downward, so as to change the internal pressure of the micro-electromechanical pump 100, so that the gas is continuously pumped and discharged to complete the gas transmission action of the micro-electromechanical pump 100.
In summary, the present disclosure provides a micro electromechanical pump, which mainly uses a semiconductor process to complete a structure of the micro electromechanical pump, so as to further reduce the volume of the pump, make the pump more light, thin and short, and achieve the size of micron scale, and reduce the problem that the volume of the past pump is too large to achieve the limitation of the size of micron scale, thereby having great industrial utility value.
Various modifications may be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims.
[ notation ] to show
100: MEMS pump
1: first substrate
11: air intake
12: a first upper surface
13: a first lower surface
2: second substrate
21: perforation
22: second upper surface
23: second lower surface
24: resonance part
25: fixing part
3: first oxide layer
31: air inlet flow channel
32: confluence chamber
4: third substrate
41: gas channel
42: third upper surface
43: third lower surface
44: vibrating part
45: outer peripheral portion
46: connecting part
5: second oxide layer
51: gas chamber
6: piezoelectric component
61: lower electrode layer
62: piezoelectric layer
63: insulating layer
64: upper electrode layer
Claims (19)
1. A microelectromechanical pump, comprising:
a first substrate manufactured by a semiconductor process and manufactured to have a first thickness by a thinning process, and formed to have at least one air inlet hole by photolithography;
a first oxide layer formed by semiconductor process and superposed on the first substrate, and formed by photoetching process to have at least one gas inlet channel and a converging chamber, wherein one end of the gas inlet channel is communicated with the converging chamber, and the other end is communicated with the gas inlet;
a second substrate, which is manufactured by a semiconductor process and a thinning process, has a second thickness, is superposed on the first oxide layer, and is manufactured by photoetching to form a through hole, the through hole is staggered with the air inlet of the first substrate, and the through hole is communicated with the confluence chamber of the first oxide layer;
a second oxide layer formed by sputtering semiconductor and stacked on the second substrate, and a gas chamber with a central recess formed by photoetching;
a third substrate, which is manufactured by a semiconductor process and a thinning process, has a third thickness, is superposed on the second oxide layer, and is manufactured by photoetching to form a plurality of gas channels, wherein the gas channels are staggered with the through holes of the second substrate, and the gas chambers of the second oxide layer are respectively communicated with the through holes of the second substrate and the gas channels of the third substrate; and
a piezoelectric element formed by semiconductor process and stacked on the third substrate.
2. The mems pump of claim 1 wherein the first, second and third substrates are silicon chips fabricated by a semiconductor process such as a crystal growth process.
3. The mems pump of claim 2 wherein the silicon chip is a polysilicon chip.
4. The microelectromechanical pump of claim 1 wherein the thinning process is a grinding process.
5. The microelectromechanical pump of claim 1 wherein the thinning process is an etching process.
6. The microelectromechanical pump of claim 1 wherein the thinning process is a dicing process.
7. The microelectromechanical pump of claim 1, wherein the piezoelectric element is fabricated by a semiconductor process such as a thin film deposition process.
8. The microelectromechanical pump of claim 7, wherein the thin film deposition process is a physical vapor deposition process.
9. The microelectromechanical pump of claim 7, wherein the thin film deposition process is a chemical vapor deposition process.
10. The microelectromechanical pump of claim 1, characterized in that the piezoelectric element is fabricated by a semiconductor process, such as a sol-gel process.
11. The microelectromechanical pump of claim 1 wherein the piezoelectric element further comprises:
a lower electrode layer;
a piezoelectric layer stacked on the lower electrode layer;
an insulating layer covering part of the surface of the piezoelectric layer and part of the surface of the lower electrode layer;
and
and the upper electrode layer is superposed on the insulating layer and the rest surface of the piezoelectric layer, which is not provided with the insulating layer, and is electrically connected with the piezoelectric layer.
12. The microelectromechanical pump of claim 1, wherein the inlet aperture of the first substrate is tapered.
13. The microelectromechanical pump of claim 1, wherein the first thickness is between 150 and 200 microns.
14. The microelectromechanical pump of claim 1, wherein the second thickness is between 2 and 5 microns.
15. The microelectromechanical pump of claim 1, wherein the third thickness is between 10-20 microns.
16. The microelectromechanical pump of claim 1, wherein the first thickness is greater than the third thickness, and the third thickness is greater than the second thickness.
17. The microelectromechanical pump of claim 1, wherein the first oxide layer has a thickness of between about 10 and about 20 microns.
18. The microelectromechanical pump of claim 1, characterized in that the thickness of the second oxide layer is between 0.5 and 2 microns.
19. The microelectromechanical pump of claim 1, wherein the first oxide layer has a thickness greater than a thickness of the second oxide layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2018110797102 | 2018-09-17 | ||
| CN201811079710 | 2018-09-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110905789A true CN110905789A (en) | 2020-03-24 |
Family
ID=69812981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811100575.5A Pending CN110905789A (en) | 2018-09-17 | 2018-09-20 | MEMS pump |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110905789A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113810807A (en) * | 2020-06-12 | 2021-12-17 | 研能科技股份有限公司 | Earphone set |
| CN113917688A (en) * | 2020-07-10 | 2022-01-11 | 研能科技股份有限公司 | Wearable display device |
| CN114100005A (en) * | 2020-08-31 | 2022-03-01 | 研能科技股份有限公司 | Filtering and purifying device |
| EP4102072A3 (en) * | 2021-06-11 | 2023-01-11 | Microjet Technology Co., Ltd. | Micro-electromechanical system pump |
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