CN210949070U - Micro fluid actuator - Google Patents

Abstract

A micro fluid actuator includes a substrate, a chamber layer, a carrier layer, and a piezoelectric element. The base plate is provided with at least one air inlet hole. The cavity layer is formed on the substrate and is provided with a first cavity, a resonance thin layer and a second cavity. The first chamber is connected to at least one intake port. The resonance thin layer is provided with a central through hole which is communicated between the first cavity and the second cavity. The bearing layer is formed on the cavity layer and is provided with a fixed area, a vibration area, at least one connecting part and at least one through hole. The fixed region is formed on the chamber layer. The vibration area is located in the center of the fixed area and corresponds to the second chamber. At least one connecting part is connected between the fixed area and the vibration area. At least one through hole is formed among the fixing area, the vibration area and the at least one connecting part. The piezoelectric element is formed on the vibration region.

Description

Micro fluid actuator

Technical Field

The present invention relates to a micro fluid actuator, and more particularly, to a micro fluid actuator manufactured by a semiconductor process.

Background

At present, in all fields, no matter in medicine, computer technology, printing, energy and other industries, products are developed towards refinement and miniaturization, wherein, a pump mechanism for conveying fluid included in products such as a micropump, a sprayer, an ink jet head, an industrial printing device and the like is a key element thereof, so that how to break through the technical bottleneck thereof by means of an innovative structure is an important content of development.

With the increasing development of technology, fluid delivery devices are being used more and more frequently, such as industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., and even recently, the image of a wearable device is seen in hot-door wearable devices, which means that conventional pumps have been gradually becoming smaller and larger.

However, most of the existing micro fluid actuators are formed by sequentially stacking and bonding a plurality of wafers after an etching process, but the micro pump actuator has a very small volume, and the difficulty of bonding is high, or the position of a chamber where internal gas flows is dislocated and the depth of the chamber has an error due to bonding, which greatly reduces the efficacy, and even is classified as a defective product.

SUMMERY OF THE UTILITY MODEL

The present disclosure is directed to a micro fluid actuator, which is manufactured by a semiconductor process and assisted by a 1P6M process.

To achieve the above object, a microfluidic actuator according to a broader aspect of the present invention includes: a base plate having at least one air inlet hole; a chamber layer formed on the substrate, having: a first chamber connected to the at least one inlet port; a resonant thin layer having a central through hole communicating with the first chamber; the second chamber corresponds to the first chamber and is communicated with the first chamber through the central through hole; a carrier layer formed on the chamber layer, having: a fixed region formed on the chamber layer; a vibration area located in the center of the fixed area and corresponding to the second chamber; at least one connecting part connected between the fixed area and the vibration area; and at least one through hole located among the fixing area, the vibration area and the at least one connecting part; and a piezoelectric element formed in the vibration region.

Drawings

Fig. 1 is a schematic view of a first embodiment of the present microfluidic actuator.

Fig. 2 is a schematic view of a second embodiment of the micro fluid actuator.

Fig. 3 is a schematic view of a third embodiment of the micro fluid actuator.

Fig. 4 is a schematic view of a fourth embodiment of the microfluidic actuator according to the present disclosure.

Fig. 5 is a schematic view of the structure of the micro fluid actuator combined with a valve.

Fig. 6A and 6B are schematic views illustrating the operation of the micro fluid actuator.

Description of the reference numerals

100: micro fluid actuator

1: substrate

11: air intake

12: first surface

13: second surface

2: chamber layer

21: the first chamber

22: resonant thin layer

221: center through hole

23: second chamber

24: insulating layer

25: polycrystalline silicon layer

25 a: first polysilicon layer

25 b: second polysilicon layer

26: protective layer structure

26 a: first protective layer structure

26 b: second protective layer structure

27: metal layer structure

3: carrying layer

31: fixing area

32: vibration region

33: connecting part

34: through hole

4: piezoelectric component

41: lower electrode layer

42: piezoelectric layer

43: upper electrode layer

5 a: first valve structure

5 b: second valve structure

51 a: first valve seat

511 a: first valve hole

52 a: first valve plate

521 a: first valve plate

522 a: first valve through hole

51 b: second valve seat

511 b: second valve hole

52 b: second valve plate

521 b: second valve sheet

522 b: second valve through hole

61: first dry film

62: second dry film

Detailed Description

Exemplary embodiments that embody features and advantages of this disclosure are described in detail below in the detailed description. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.

Referring to fig. 1, the micro fluid actuator 100 includes a substrate 1, a chamber layer 2, a carrier layer 3, and a piezoelectric element 4, wherein the chamber layer 2 is formed on the substrate 1, the carrier layer 3 is formed on the chamber layer 2, and the piezoelectric element 4 is formed on the carrier layer 3.

The substrate 1 has at least one air inlet hole 11, a first surface 12 and a second surface 13, the first surface 12 and the second surface 13 are two opposite surfaces, and the air inlet hole 11 penetrates from the first surface 12 to the second surface 13.

The chamber layer 2 is disposed on the first surface 12 of the substrate 1 and has a first chamber 21, a resonant layer 22 and a second chamber 23. The first chamber 21 is adjacent to the first surface 12 of the substrate 1 and communicates with the gas inlet hole 11 of the substrate 1. The resonant membrane 22 is located between the first chamber 21 and the second chamber, and has a central through hole 221, and the central through hole 221 is communicated with the first chamber 21. The second chamber 23 corresponds to the first chamber 21 and communicates with the first chamber 21 through the central through hole 221 of the resonant thin layer 22.

The carrier layer 3 is disposed on the chamber layer 2 and has a fixing region 31, a vibrating region 32, at least one connecting portion 33 and at least one through hole 34. The carrier layer 3 is fixed to the chamber layer 2 by a fixing section 31, and the vibration section 32 is located at the center of the fixing section 31 and corresponds to the second chamber 23. The connecting portion 33 is connected between the fixing portion 31 and the vibrating portion 32 to achieve the effect of elastic support. The through hole 34 is formed between the fixing region 31, the vibration region 32, and the connecting portion 33, and allows a fluid to pass therethrough.

The piezoelectric element 4 is formed on the vibration region 32 and includes a lower electrode layer 41, a piezoelectric layer 42 and an upper electrode layer 43, wherein the lower electrode layer 41 is formed on the surface of the vibration region 32. The piezoelectric layer 42 is stacked on the surface of the lower electrode layer 41. The upper electrode layer 43 is stacked on the surface of the piezoelectric layer 42 to be electrically connected to the piezoelectric layer 42.

The volume of the first chamber 21 and the second chamber 23 in the chamber layer 2 of the micro fluid actuator 100 directly affects the effect of the micro fluid actuator 100, so that when the chamber layer 2 is fabricated, in order to accurately define the volume of the first chamber 21 and the second chamber 23, the fabrication is completed by other structures and processes in addition to the general semiconductor process. Referring to FIG. 1, the chamber layer 2 has an insulating layer 24, a polysilicon layer 25, a passivation layer 26 and a plurality of metal layer structures 27, wherein the insulating layer 24 is formed on the substrateThe first surface 12 of the plate 1, the insulating layer 24 may be silicon dioxide (SiO)₂) Layer, but not limited thereto. A polysilicon layer 25 is stacked on the insulating layer 24, and a protection layer structure 26 and a plurality of metal layer structures 27 are formed on the polysilicon layer 25. In the embodiment, as a complementary process to the CMOS-MEMS 1P6M (One-Poly-Six-Metal) process, a plurality of Metal layers are deposited on predetermined positions of the first chamber 21 and the second chamber 23 by the 1P6M process to determine the positions and sizes of the first chamber 21 and the second chamber 23, the protection layer structure 26 is used in the rest areas, and then the Metal layers located in the first chamber 21 and the second chamber 23 are removed by the etching process, so that the positions and sizes of the first chamber 21 and the second chamber 23 can be precisely defined, and errors generated by the process on the first chamber 21 and the second chamber 23 can be reduced.

With reference to fig. 1, which is also the first embodiment of the present disclosure, the first chamber 21 and the second chamber 23 can be precisely formed in the chamber layer 2 by the 1P6M process, wherein the resonant thin layer 22 can be formed by the protection layer structure 26.

Referring to fig. 2, a second embodiment of the present invention is similar to the first embodiment, in which the chamber layer 2 is fabricated by using a 1P6M process, and the difference between the first embodiment and the second embodiment is that the resonant thin layer 22 is formed by a passivation structure 26 covering one of the metal layer structures 27.

Referring to fig. 3, the chamber layer 2 is also fabricated by a 1P6M process in the third embodiment, and the polysilicon layer 25 is used as the resonant layer 22 in this embodiment.

Referring to fig. 4, in a fourth embodiment of the present invention, a 2P4M (two-Poly-four-Metal) process is used to form a chamber layer 2, wherein the chamber layer 2 includes an insulating layer 24, a first polysilicon layer 25a, a first passivation structure 26a, a second polysilicon layer 25b, a second passivation structure 26b, and a plurality of Metal layer structures 27. The insulating layer 24 is formed on the substrate 1, the first polysilicon layer 25a is formed on the insulating layer 24, the first passivation structure 26a is formed on the first polysilicon layer 25a, the second polysilicon layer 25b is formed on the first passivation structure 26a, the second passivation structure 26b and the plurality of metal layer structures 27 are formed on the second polysilicon layer 25b, and the resonant thin layer 22 is formed by the first polysilicon layer 25a, the first passivation structure 26a and the second polysilicon layer 25 b.

The insulating layer 24 can be, but is not limited to, a silicon dioxide layer; the passivation layer structure 26, the first passivation layer structure 26a and the second passivation layer structure 26b may be but are not limited to an oxide layer structure; the carrier layer 3 can be a silicon dioxide layer or a silicon nitride layer, but not limited thereto.

Referring to fig. 5, the micro-fluid actuator 100 further includes a first valve structure 5a and a second valve structure 5 b. The first valve structure 5a is fixed to the second surface 13 of the substrate 1 by a first dry film 61. The second valve structure 5b is fixed to the fixing section 31 of the carrier layer 3 by a second dry film 62. The first valve structure 5a includes a first valve seat 51a and a first valve plate 52a, the second valve structure 5b includes a second valve seat 51b and a second valve plate 52b, the first valve seat 51a has at least one first valve hole 511a, and the second valve seat 51b has at least one second valve hole 511 b. Wherein the first valve hole 511a of the first valve structure 5a is disposed corresponding to the intake hole 11 of the base plate 1, and the second valve hole 511b of the second valve structure 5b communicates with the second chamber 23. The first valve plate 52a and the second valve plate 52b are respectively disposed on the first valve seat 51a and the second valve seat 51b, the first valve plate 52a has a first valve plate 521a and at least one first valve through hole 522a, and the second valve plate 52b has a second valve plate 521b and at least one second valve through hole 522 b. The first and second valve plates 521a and 521b are respectively sealed in the first and second valve holes 511a and 511b, and the first and second valve through holes 522a and 522b are respectively located around the first and second valve plates 521a and 521b and are respectively sealed by the first and second valve seats 51a and 51 b.

The first valve seat 51a and the second valve seat 51b may be made of silicon, stainless steel or glass, and the first valve plate 52a and the second valve plate 52b may be made of polyimide (PI, polyimide) film.

Referring to fig. 6A, after the upper electrode layer 43 and the lower electrode layer 41 receive the driving voltage, the driving voltage is transmitted to the piezoelectric layer 42, the piezoelectric layer 42 deforms due to the influence of the piezoelectric effect, and further drives the vibration region 32 to move up and down, when the piezoelectric layer 42 drives the vibration region 32 to move up, the resonance thin plate 22 is driven to move up, and simultaneously the volume of the first chamber 21 is increased, the internal pressure is decreased, so that the gas is drawn from the gas inlet 11, and when the gas is drawn from the gas inlet 11, since the gas pressure of the gas inlet 11 is lower than the gas pressure outside the microfluidic actuator 100, the external gas pushes the first valve plate 521a of the first valve structure 5a upward, so that the first valve plate 521a leaves the corresponding first valve hole 511a, and the gas starts to enter from the first valve hole 511a and flows into the gas inlet 11 through the first valve hole 522 a.

Referring to fig. 6B, when the piezoelectric layer 42 drives the vibration region 32 to move downward, the resonant thin layer 22 is driven to move downward, and the gas pushing the second chamber 23 moves toward the through hole 34, and the second valve plate 521B of the second valve structure 5B is driven upward to open the second valve hole 511B of the second valve structure 5B, so that the gas is transported outward through the second valve hole 511B and the second valve through hole 522B of the second valve structure 5B. Continuing with the above steps, the piezoelectric layer 42 is driven to move the vibration region 32 up and down, and the gas pressures of the first chamber 21 and the second chamber 23 are changed to complete the gas transportation.

In summary, the present disclosure provides a micro fluid actuator, which is assisted by processes such as 1P6M or 2P4M in a semiconductor process to precisely form a first chamber and a second chamber, so as to reduce errors generated by the positions and depths of the first chamber and the second chamber in the process, and avoid the problem of reduced efficacy of the first chamber and the second chamber due to the depth errors without a combination process such as pressing, and thus the micro fluid actuator has great industrial utility value.

Various modifications may be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims.

Claims (10)

1. A microfluidic actuator, comprising:

a base plate having at least one air inlet hole;

a chamber layer formed on the substrate, having:

a first chamber connected to the at least one inlet port;

a resonant thin layer having a central through hole communicating with the first chamber; and

the second chamber corresponds to the first chamber and is communicated with the first chamber through the central through hole;

a carrier layer formed on the chamber layer, having:

a fixed region formed on the chamber layer;

a vibration area located in the center of the fixed area and corresponding to the second chamber;

at least one connecting part connected between the fixed area and the vibration area; and

at least one through hole formed among the fixing area, the vibration area and the at least one connecting part; and

a piezoelectric element formed in the vibration region.

2. The micro-fluidic actuator of claim 1 wherein the chamber layer comprises a protective layer structure and a plurality of metal layer structures.

3. The micro-fluidic actuator as claimed in claim 2, wherein the chamber layer comprises an insulating layer formed on the substrate, a polysilicon layer formed on the insulating layer, and the passivation layer structure and the plurality of metal layer structures formed on the polysilicon layer.

4. The micro-fluidic actuator as claimed in claim 3, wherein the resonant thin layer is formed of the polysilicon layer.

5. The micro-fluidic actuator as claimed in any one of claims 2 or 3 wherein the resonating thin layer is formed by the protective layer structure.

6. The micro-fluidic actuator as claimed in any one of claims 2 or 3, wherein the resonance thin layer is formed by one of the passivation layer structure and the plurality of metal layer structures.

7. The micro fluid actuator of claim 1, wherein the chamber layer comprises an insulating layer formed on the substrate, a first polysilicon layer formed on the insulating layer, a first passivation structure formed on the first polysilicon layer, a second polysilicon layer formed on the first passivation structure, a second passivation structure formed on the second polysilicon layer, and a plurality of metal layers formed on the first polysilicon layer, wherein the resonance film is formed by the first polysilicon layer, the first passivation structure and the second polysilicon layer.

8. The micro-fluidic actuator as claimed in claim 1, wherein the piezoelectric element further comprises:

a lower electrode layer;

a piezoelectric layer stacked on the lower electrode layer; and

and the upper electrode layer is superposed on the piezoelectric layer and is electrically connected with the piezoelectric layer.

9. The microfluidic actuator of claim 1, further comprising a first valve structure secured to the substrate by a first dry film.

10. The microfluidic actuator of claim 1 further comprising a second valve structure secured to the mounting region by a second dry film.

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