CN210949070U - Micro fluid actuator - Google Patents

Abstract

A microfluid actuator comprises a substrate, a chamber layer, a bearing layer and a piezoelectric component. The substrate has at least one air inlet. The chamber layer is formed on the substrate and has a first chamber, a resonant thin layer and a second chamber. The first chamber is connected to the at least one air inlet. The resonant thin layer has a central through hole, which is connected between the first chamber and the second chamber. The bearing layer is formed on the chamber layer and has a fixed area, a vibration area, at least one connecting portion and at least one through hole. The fixed area is formed on the chamber layer. The vibration area is located in the center of the fixed area and corresponds to the second chamber. At least one connecting portion is connected between the fixed area and the vibration area. At least one through hole is formed between the fixed area, the vibration area and the at least one connecting portion. The piezoelectric component is formed on the vibration area.

Description

microfluidic actuator

technical field

This case is about a micro fluid actuator, especially a micro fluid actuator manufactured by semiconductor manufacturing process.

Background technique

At present, in various fields, whether it is medicine, computer technology, printing, energy and other industries, products are developing in the direction of refinement and miniaturization. Among them, micro-pumps, sprayers, inkjet heads, industrial printing devices and other products contain The pump structure that transports fluid is its key component, so how to break through its technical bottleneck with innovative structure is an important content of development.

With the rapid development of science and technology, the application of fluid delivery devices has become more and more diversified, such as industrial applications, biomedical applications, medical care, electronic cooling, etc., and even the recent popular wearable devices can be seen. Traditional pumps have gradually tended towards miniaturization of devices and maximization of flow.

However, at present, most micro-fluidic actuators are formed by stacking and combining multiple wafers in sequence after an etching process. However, the micro-pump actuators are small in size and difficult to combine, or the combination may cause internal gas flow. The misalignment of the chamber position and the error of the depth will greatly reduce the efficacy, and even be classified as a defective product. Therefore, how to produce an integrated micro fluid actuator is the main subject of this research.

Utility model content

The main purpose of this case is to provide a micro-fluidic actuator, which is manufactured by a semiconductor process and supplemented by a 1P6M process.

In order to achieve the above purpose, a broader implementation aspect of the present application is to provide a micro-fluidic actuator, comprising: a substrate having at least one air inlet; a chamber layer formed on the substrate and having: a first a cavity, connected to the at least one air inlet; a resonant thin layer, having a central through hole, the central through hole communicates with the first cavity; and a second cavity corresponding to the first cavity, and communicate with the first chamber through the central through hole; a bearing layer, formed on the chamber layer, has: a fixed area, formed on the chamber layer; a vibration area, located in the center of the fixed area, and corresponding to the second chamber; at least one connecting part connected between the fixed area and the vibration area; and at least one through hole located between the fixed area, the vibration area and the at least one connecting part; and a pressure An electrical component is formed in the vibration area.

Description of drawings

FIG. 1 is a schematic diagram of the first embodiment of the microfluidic actuator of the present invention.

FIG. 2 is a schematic diagram of a second embodiment of the microfluidic actuator of the present invention.

FIG. 3 is a schematic diagram of a third embodiment of the microfluidic actuator of the present invention.

FIG. 4 is a schematic diagram of the fourth embodiment of the microfluidic actuator of the present invention.

FIG. 5 is a schematic diagram of the structure of the microfluidic actuator combined with the valve of the present invention.

6A and 6B are schematic diagrams of the operation of the microfluidic actuator of the present invention.

Description of reference numerals

100: Microfluidic Actuators

1: Substrate

11: Air intake holes

12: First surface

13: Second Surface

2: Chamber layer

21: The first chamber

22: Resonant Thin Layer

221: Center through hole

23: Second chamber

24: Insulation layer

25: Polysilicon layer

25a: first polysilicon layer

25b: Second polysilicon layer

26: Protective layer structure

26a: First protective layer structure

26b: Second protective layer structure

27: Metal layer structure

3: Loading layer

31: Fixed area

32: Vibration Zone

33: Connection part

34: Through hole

4: Piezoelectric components

41: Lower electrode layer

42: Piezoelectric layer

43: Upper electrode layer

5a: First valve structure

5b: Second valve structure

51a: first valve seat

511a: first valve hole

52a: The first valve plate

521a: first valve body

522a: first valve through hole

51b: Second valve seat

511b: Second valve hole

52b: Second valve plate

521b: Second valve body

522b: Second valve through hole

61: First dry film

62: Second dry film

Detailed ways

Some typical embodiments embodying the features and advantages of the present case will be described in detail in the description of the latter paragraph. It should be understood that this case can have various changes in different aspects, all of which do not depart from the scope of this case, and the descriptions and diagrams therein are essentially used for illustration rather than limiting this case.

Please refer to FIG. 1 , the microfluidic actuator 100 of the present application includes a substrate 1 , a chamber layer 2 , a loading layer 3 and a piezoelectric element 4 . The chamber layer 2 is formed on the substrate 1 , and the loading layer 2 is Layer 3 is formed on chamber layer 2 , and piezoelectric element 4 is formed on carrier layer 3 .

The substrate 1 has at least one air intake hole 11 , a first surface 12 and a second surface 13 , the first surface 12 and the second surface 13 are two opposite surfaces, and the air intake hole 11 penetrates from the first surface 12 to the second surface 13.

The chamber layer 2 is located on the first surface 12 of the substrate 1 and has a first chamber 21 , a resonance thin layer 22 and a second chamber 23 . The first chamber 21 is adjacent to the first surface 12 of the substrate 1 and communicated with the air inlet 11 of the substrate 1 . The resonance thin layer 22 is located between the first chamber 21 and the second chamber, and has a central through hole 221 , and the central through hole 221 communicates with the first chamber 21 . The second chamber 23 corresponds to the first chamber 21 and communicates with the first chamber 21 through the central through hole 221 of the resonance thin layer 22 .

The carrier layer 3 is located on the chamber layer 2 and has a fixed area 31 , a vibration area 32 , at least one connecting portion 33 and at least one through hole 34 . The loading layer 3 is fixed on the chamber layer 2 through the fixing area 31 , and the vibration area 32 is located in the center of the fixing area 31 and corresponds to the second chamber 23 . The connecting portion 33 is connected between the fixed area 31 and the vibration area 32 to achieve the effect of elastic support. A through hole 34 is formed between the fixed area 31 , the vibration area 32 and the connecting portion 33 for fluid to pass through.

The piezoelectric element 4 is formed on the vibration area 32 and includes a lower electrode layer 41 , a piezoelectric layer 42 and an upper electrode layer 43 , and the lower electrode layer 41 is formed on the surface of the vibration area 32 . The piezoelectric layer 42 is stacked on the surface of the lower electrode layer 41 . The upper electrode layer 43 is stacked on the surface of the piezoelectric layer 42 to be electrically connected with the piezoelectric layer 42 .

The volumes of the first chamber 21 and the second chamber 23 in the chamber layer 2 of the microfluidic actuator 100 of the present case will directly affect the effect of the microfluidic actuator 100 . In order to accurately define the volumes of the first chamber 21 and the second chamber 23, in addition to the general semiconductor process, other structures and processes are supplemented. Please continue to refer to FIG. 1 , the chamber layer 2 has an insulating layer 24 , a polysilicon layer 25 , a protective layer structure 26 and a plurality of metal layer structures 27 , the insulating layer 24 is formed on the first surface 12 of the substrate 1 , The insulating layer 24 may be a silicon dioxide (SiO ₂ ) layer, but not limited thereto. The polysilicon layer 25 is stacked on the insulating layer 24 , and the protective layer structure 26 and a plurality of metal layer structures 27 are formed on the polysilicon layer 25 . This embodiment is supplemented by a process such as the 1P6M (One-Poly-Six-Metal) process of CMOS-MEMS, through which a plurality of metal layers are deposited at predetermined positions of the first chamber 21 and the second chamber 23 through the 1P6M process , in order to establish the position and size of the first chamber 21 and the second chamber 23 , the remaining areas are all covered with a protective layer structure 26 , and then the metal layers located in the first chamber 21 and the second chamber 23 are removed by an etching process. In addition, the positions and sizes of the first chamber 21 and the second chamber 23 can be precisely defined, thereby reducing the error caused by the process for the first chamber 21 and the second chamber 23 .

Please continue to refer to FIG. 1 , which is also the first embodiment of the present application. The first chamber 21 and the second chamber 23 can be accurately formed in the chamber layer 2 through the 1P6M process, wherein the resonance thin layer 22 can be made of a protective layer. Structure 26 is formed.

Please refer to FIG. 2 , the second embodiment of the present case is also supplemented by the 1P6M process to manufacture the chamber layer 2 . The difference from the first embodiment is that the resonance thin layer 22 is covered by a protective layer structure 26 . One layer of the metal layer structure 27 is formed.

Please refer to FIG. 3 , in the third embodiment of the present application, the chamber layer 2 is also fabricated by the 1P6M process, and the polysilicon layer 25 is used as the resonance thin layer 22 in this embodiment.

As shown in FIG. 4 , the fourth embodiment of the present case uses a 2P4M (two-Poly-four-Metal) process to form a chamber layer 2 , wherein the chamber layer 2 includes an insulating layer 24 , a The first polysilicon layer 25 a , a first protective layer structure 26 a , a second polysilicon layer 25 b , a second protective layer structure 26 b and a plurality of metal layer structures 27 . The insulating layer 24 is formed on the substrate 1, the first polysilicon layer 25a is formed on the insulating layer 24, the first protective layer structure 26a is formed on the first polysilicon layer 25a, and the second polysilicon layer 25b is formed On the first protective layer structure 26a, the second protective layer structure 26b and the plurality of metal layer structures 27 are formed on the second polysilicon layer 25b, and the resonance thin layer 22 is formed by the first polysilicon layer 25a , the first protective layer structure 26a and the second polysilicon layer 25b are formed.

The above-mentioned insulating layer 24 can be, but is not limited to, a silicon dioxide layer; the protective layer structure 26 , the first protective layer structure 26 a and the second protective layer structure 26 b can be, but not limited to, an oxide layer structure; It can be a silicon dioxide layer or a silicon nitride layer, but not limited thereto.

Please refer to FIG. 5 , the microfluidic actuator 100 of the present application further includes a first valve structure 5a and a second valve structure 5b. The first valve structure 5a is fixed to the second surface 13 of the substrate 1 through a first dry film 61 . The second valve structure 5b is fixed to the fixing area 31 of the carrier layer 3 through a second dry film 62 . The first valve structure 5a includes a first valve seat 51a and a first valve plate 52a, the second valve structure 5b includes a second valve seat 51b and a second valve plate 52b, and the first valve seat 51a is provided with at least one first valve The valve hole 511a and the second valve seat 51b are provided with at least one second valve hole 511b. The first valve hole 511 a of the first valve structure 5 a is disposed corresponding to the air inlet hole 11 of the substrate 1 , and the second valve hole 511 b of the second valve structure 5 b is communicated with the second chamber 23 . The first valve plate 52a and the second valve plate 52b are respectively disposed on the first valve seat 51a and the second valve seat 51b, and the first valve plate 52a has a first valve plate body 521a and at least one first valve through hole 522a. The second valve plate 52b has a second valve plate body 521b and at least one second valve through hole 522b. The first valve plate body 521a and the second valve plate body 521b are closed to the first valve hole 511a and the second valve hole 511b respectively, and the first valve through hole 522a and the second valve through hole 522b are located in the first valve plate body 521a respectively. and the periphery of the second valve body 521b, and are respectively closed by the first valve seat 51a and the second valve seat 51b.

The first valve seat 51a and the second valve seat 51b can be silicon substrates, stainless steel or glass, and the first valve plate 52a and the second valve plate 52b can be polyimide (PI, Polymide) films.

Referring to FIG. 6A , after the upper electrode layer 43 and the lower electrode layer 41 receive the driving voltage, the driving voltage is transmitted to the piezoelectric layer 42 , and the piezoelectric layer 42 is deformed by the piezoelectric effect, thereby driving the vibration region 32 Moving up and down, when the piezoelectric layer 42 drives the vibration area 32 to move upward, it will drive the resonance thin plate 22 to move upward, and at the same time, the volume of the first chamber 21 increases, and the internal pressure decreases. When the hole 11 sucks gas, since the air pressure of the air inlet 11 is lower than the air pressure outside the microfluidic actuator 100, the external air will push the first valve body 521a of the first valve structure 5a upward, so that the first valve plate The body 521a leaves the corresponding first valve hole 511a, and the gas starts to enter from the first valve hole 511a, and flows into the air intake hole 11 through the first valve through hole 522a.

Referring to FIG. 6B again, when the piezoelectric layer 42 drives the vibration region 32 to move downward, it simultaneously drives the resonance thin layer 22 to move downward. At this time, the gas pushing the second chamber 23 moves toward the through hole 34 , at this time, the second valve body 521b of the second valve structure 5b will be pushed upward to open the second valve hole 511b of the second valve structure 5b, and the gas will pass through the second valve hole 511b of the second valve structure 5b and the second valve hole 511b of the second valve structure 5b. The second valve through hole 522b is transported to the outside. Continuing the above steps, the piezoelectric layer 42 is driven to move the vibration region 32 up and down, and the air pressures of the first chamber 21 and the second chamber 23 are changed to complete the action of conveying gas.

To sum up, the present application provides a micro-fluidic actuator, which is supplemented by 1P6M or 2P4M and other processes in the semiconductor process to accurately form the first chamber and the second chamber, which can reduce the number of the first chamber and the second chamber in the process. The error caused by the position and depth of the two chambers can be combined without the need for pressing and other combined processes to avoid the problem that the efficiency of the first chamber and the second chamber is reduced due to the depth error of the first chamber and the second chamber, which is of great industrial value. , to file an application in accordance with the law.

This case can be modified by a person who is familiar with this technology, and all kinds of modifications can be made without departing from the protection of the scope of the patent application attached.

Claims (10)

1. A microfluidic actuator, comprising:

a base plate having at least one air inlet hole;

a chamber layer formed on the substrate, having:

a first chamber connected to the at least one inlet port;

a resonant thin layer having a central through hole communicating with the first chamber; and

the second chamber corresponds to the first chamber and is communicated with the first chamber through the central through hole;

a carrier layer formed on the chamber layer, having:

a fixed region formed on the chamber layer;

a vibration area located in the center of the fixed area and corresponding to the second chamber;

at least one connecting part connected between the fixed area and the vibration area; and

at least one through hole formed among the fixing area, the vibration area and the at least one connecting part; and

a piezoelectric element formed in the vibration region.

2. The micro-fluidic actuator of claim 1 wherein the chamber layer comprises a protective layer structure and a plurality of metal layer structures.

3. The micro-fluidic actuator as claimed in claim 2, wherein the chamber layer comprises an insulating layer formed on the substrate, a polysilicon layer formed on the insulating layer, and the passivation layer structure and the plurality of metal layer structures formed on the polysilicon layer.

4. The micro-fluidic actuator as claimed in claim 3, wherein the resonant thin layer is formed of the polysilicon layer.

5. The micro-fluidic actuator as claimed in any one of claims 2 or 3 wherein the resonating thin layer is formed by the protective layer structure.

6. The micro-fluidic actuator as claimed in any one of claims 2 or 3, wherein the resonance thin layer is formed by one of the passivation layer structure and the plurality of metal layer structures.

7. The micro fluid actuator of claim 1, wherein the chamber layer comprises an insulating layer formed on the substrate, a first polysilicon layer formed on the insulating layer, a first passivation structure formed on the first polysilicon layer, a second polysilicon layer formed on the first passivation structure, a second passivation structure formed on the second polysilicon layer, and a plurality of metal layers formed on the first polysilicon layer, wherein the resonance film is formed by the first polysilicon layer, the first passivation structure and the second polysilicon layer.

8. The micro-fluidic actuator as claimed in claim 1, wherein the piezoelectric element further comprises:

a lower electrode layer;

a piezoelectric layer stacked on the lower electrode layer; and

and the upper electrode layer is superposed on the piezoelectric layer and is electrically connected with the piezoelectric layer.

9. The microfluidic actuator of claim 1, further comprising a first valve structure secured to the substrate by a first dry film.

10. The microfluidic actuator of claim 1 further comprising a second valve structure secured to the mounting region by a second dry film.

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