TWM574151U - Micro-electromechanical pump - Google Patents

Abstract

A microelectromechanical pump, comprising: a first substrate having a thickness of a first thickness, a first substrate having an air inlet hole; a first oxide layer, a first substrate stacked thereon, the first oxide layer having an inlet flow channel and a confluence chamber a chamber, one end of the inlet flow channel is in communication with the confluence chamber, and the other end is in communication with the inlet hole; the second substrate is stacked on the first oxide layer, the thickness is a second thickness, and the second substrate has perforations, perforations and The bottom hole of the substrate is misaligned; the second oxide layer is stacked on the second substrate, the center of which is recessed to form a gas chamber; and the third substrate is stacked on the second oxide layer, the thickness of which is a third thickness, the third substrate A gas passage having a perforation misalignment of the gas passage and the second substrate; and a piezoelectric component stacked on the third substrate.

Description

Microelectromechanical pump

This case relates to a microelectromechanical pump, especially a micron-scale microelectromechanical pump manufactured through a semiconductor process.

At present, in various fields, such as medicine, computer technology, printing, energy and other industries, the products are developing in the direction of refinement and miniaturization. Among them, products such as micro-pumps, sprayers, inkjet heads, industrial printing devices, etc. The pump used to transport fluids is a key component, so how to break through its technical bottlenecks with innovative structures is an important part of development.

With the rapid development of technology, the application of fluid delivery devices is becoming more and more diversified. For industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., even the most popular wearable devices can be seen in the shadows. Conventional pumps have gradually become the trend toward miniaturization of devices and maximization of flow.

However, although the miniaturized pump has been continuously improved and miniaturized, it still cannot break through the millimeter level and then the pump is reduced to the micron level. Therefore, how to reduce the pump to the micron level and complete it as a new type The main subject.

The main purpose of this case is to provide a microelectromechanical pump for micron-scale microelectromechanical pumping manufactured by semiconductor manufacturing to reduce the volume limitation of the pump. In order to achieve the above object, a broader embodiment of the present invention provides a microelectromechanical pump comprising: a first substrate, which is formed by a semiconductor process and is formed through a thinning process to have a first thickness and is etched through the lithography. Forming and forming at least one air inlet hole; a first oxide layer is formed on the first substrate by a process, and formed by the microlithography etching process to form at least one inlet flow channel and a manifold cavity a chamber, one end of the inlet flow channel is in communication with the confluence chamber, and the other end is in communication with the inlet hole; a second substrate is formed by a semiconductor process and is formed by a thinning process to have a second thickness And being disposed on the first oxide layer and formed by lithography to form a through hole, the through hole being misaligned with the inlet hole of the first substrate, and the through hole is in communication with the confluence chamber of the first oxide layer a second oxide layer is formed by a sputtering semiconductor process and stacked on the second substrate, and a gas chamber forming a central recess is formed through a photolithography process; a third substrate is passed through the semiconductor process Produced and transparent The thinning process has a third thickness and is stacked on the second oxide layer and formed by photolithography to form a plurality of gas channels, and the gas channels are misaligned with the second substrate. The gas chamber of the second oxide layer is respectively in communication with the perforation of the second substrate and the gas channel of the third substrate; and a piezoelectric component is formed by the semiconductor process to be stacked on the third substrate on.

Some exemplary embodiments embodying the features and advantages of the present invention are described in detail in the following description. It is to be understood that the present invention is capable of various modifications in various embodiments, and is not intended to limit the scope of the invention.

The MEMS pump 100 of this case can be used in the fields of medical technology, energy, computer technology or printing, for guiding fluids and increasing or controlling the flow rate of fluids. Please refer to FIG. 1 , which is a schematic diagram of the microelectromechanical pump 100 of the present invention. The microelectromechanical pump 100 of the present invention comprises: a first substrate 1, a second substrate 2, a first oxide layer 3, a third substrate 4, a second oxide layer 5, and a piezoelectric component 6, and A substrate 1, a first oxide layer 3, a second substrate 2, a second oxide layer 5, a third substrate 4, and a piezoelectric element 6 are sequentially stacked and integrated to form an integral body.

The first substrate 1, the second substrate 2, and the third substrate 4 may be substrates of the same material. In this embodiment, all of the three substrates are formed by a semiconductor process, and are long. The crystal process can be a polysilicon formation technology, which means that the first substrate 1, the second substrate 2, and the third substrate 4 are all a polysilicon germanium wafer substrate, and the first substrate 1 has a thickness of a first thickness, and the second substrate 2 The thickness of the third substrate 4 is a third thickness, the first substrate 1 can pass through the first thickness of the thinning process, and can be made larger than the third substrate 4 through the thinning process. The third thickness of the third substrate 4 can be transmitted through the third thickness of the thinning process and can be greater than the second thickness of the second substrate 2 through the thinning process. The substrate thinning process can achieve the thickness required by the substrate by means of grinding, etching, cutting, etc., so that the first thickness is formed by a thinning process to a thickness of between 150 and 200 micrometers, and the second thickness is thin. The thickness of the process is between 2 and 5 microns, and the third thickness is made through a thinning process to a thickness of between 10 and 20 microns.

The first oxide layer 3 and the second oxide layer 5 may be a film of the same material. In the embodiment, the first oxide layer 3 and the second oxide layer 5 are a cerium oxide (SiO ₂ ) film, first. The oxide layer 3 and the second oxide layer 5 can be formed into a film of a thickness by a semiconductor process such as sputtering or high-temperature oxidation. The thickness of the first oxide layer 3 is greater than the thickness of the second oxide layer 5. In the embodiment, the thickness of the first oxide layer 3 is between 10 and 20 micrometers, and the thickness of the second oxide layer 5 is formed. It is between 0.5 and 2 microns.

The first substrate 1 is formed into a first upper surface 12 and a first lower surface 13 through a semiconductor crystal growth process, and is lithographically etched to form at least one air inlet hole 11 , and each of the air inlet holes 11 is The first lower surface 13 is penetrated to the first upper surface 12. In the embodiment, the number of the air inlet holes 11 is two, but not limited thereto, and the air inlet hole 11 is advanced to improve the air intake effect. The air vent 11 presents a tapered taper from the first lower surface 13 to the first upper surface 12.

The first oxide layer 3 is formed on the first upper surface 12 of the first substrate 1 by a semiconductor process such as sputtering or high-temperature oxidation, and the first oxide layer 3 is formed by a photolithography process to form at least one The air flow path 31 and the confluence chamber 32, the intake flow path 31 and the number and position of the air intake holes 11 of the first substrate 1 correspond to each other. Therefore, in the present embodiment, the number of the intake air flow paths 31 is also 2 One end of the two intake flow passages 31 are respectively connected to the two intake holes 11 of the first substrate 1, and the other ends of the two intake flow passages 31 are connected to the confluence chamber 32, and the gas is respectively made by 2 After the intake holes 11 are entered, they are converged into the confluence chamber 32 through their corresponding intake runners 31.

The second substrate 2 is formed by a semiconductor epitaxial process to form a second upper surface 22, a second lower surface 23, a resonating portion 24, and a fixing portion 25, and is formed by microlithography to form a through hole 21, and the through hole 21 The second substrate 2 is formed at a central position and penetrates the second upper surface 22 and the second lower surface 23, and the peripheral portion of the through hole 21 is the resonance portion 24, and the peripheral portion of the resonance portion 24 is the fixed portion 25, wherein The second lower surface 23 of the second substrate 2 is stacked on the first oxide layer 3, and the through holes 21 of the second substrate 2 are vertically corresponding to and communicate with the confluence chamber 32 of the first oxide layer 3, and the through holes 21 and the first substrate 1 are The air intake holes 11 are offset.

The second oxide layer 5 is formed on the second upper surface 22 of the second substrate 2 by a semiconductor process such as sputtering or high-temperature oxidation, and the second oxide layer 5 is formed by a photolithography process to form a central region depression. a gas chamber 51, the gas chamber 51 and the perforation 21 of the second substrate 2 and the resonance portion 24 of the peripheral portion of the perforation 21 are vertically corresponding, so that gas can enter the gas chamber 51 through the perforation 21 and the resonance portion 24 can be Displacement within the gas chamber 51.

The third substrate 4 is formed by a semiconductor epitaxial process to form a third upper surface 42 and a third lower surface 43 and is lithographically etched to form a plurality of gases having a third upper surface 42 and a third lower surface 43. The passage 41 defines a vibrating portion 44, an outer peripheral portion 45, and three portions of the plurality of connecting portions 46 (as shown in FIG. 3), respectively, a vibrating portion 44 surrounded by the gas passage 41, surrounding the gas passage 41. A peripheral outer peripheral portion 45, and a plurality of connecting portions 46 between the respective gas passages 41 and connected between the vibrating portion 44 and the outer peripheral portion 45. In the present embodiment, the number of the gas passages 41 is four, and the number of the connecting portions 46 is four.

Referring again to FIG. 1, the piezoelectric component 6 includes a lower electrode layer 61, a piezoelectric layer 62, an insulating layer 63, and an upper electrode layer 64. The piezoelectric component 6 may be physically vapor deposited (PVD) or A thin film deposition or sol-gel process such as chemical vapor deposition (CVD), so in the present embodiment, the upper electrode layer 64 and the lower electrode layer 61 are subjected to physical vapor deposition (PVD) or chemical vapor phase. Thin film deposition by deposition (CVD) or the like, the lower electrode layer 61 is stacked on the third upper surface 42 of the third substrate 4, and is located on the vibrating portion 44 of the third substrate 4, and the piezoelectric layer 62 is permeable to thin film deposition. Or a sol-gel method, the piezoelectric layer 62 is superposed on the lower electrode layer 61, and the two are electrically connected through the contact area. Further, the area of the piezoelectric layer 62 is smaller than the area of the lower electrode layer 61, so that the piezoelectric layer 62 cannot completely shield the lower electrode layer 61, in which a partial region of the piezoelectric layer 62 and the lower electrode layer 61 are not provided by the piezoelectric layer 61. The shielded region is overlaid to form an insulating layer 63, and finally the upper electrode layer 64 is overlaid on a partial region of the insulating layer 63 and a portion of the piezoelectric layer 62 that is not shielded by the insulating layer 63, so that the upper electrode layer 64 and the piezoelectric layer The layer 62 is in contact with the incoming connection while being blocked between the upper electrode layer 64 and the lower electrode layer 61 by the insulating layer 63 to avoid direct contact between the two to cause a short circuit.

As shown in FIG. 1 , the first oxide layer 3 is located between the first upper surface 12 of the first substrate 1 and the second lower surface 23 of the second substrate 2 , and the second oxide layer 5 is located on the second substrate 2 . Between the second upper surface 22 and the third lower surface 43 of the third substrate 4, the piezoelectric component 6 is located on the third upper surface 42 of the third substrate 4, and the piezoelectric component 6 and the second portion located on the third lower surface 43 The oxide layer 5 is opposite, and the piezoelectric component 6 is further opposite to the gas chamber 51 of the second oxide layer 5 located on the third lower surface 43, the first oxide layer 3 between the first substrate 1 and the second substrate 2 The inner intake passage 31 communicates with the intake hole 11 of the first substrate 1, and the confluence chamber 32 communicates with the through hole 21 of the second substrate 2 to allow gas to pass through the intake hole 11 of the first substrate 1 to pass through. After the gas channel 31 is concentrated in the confluence chamber 32, the perforation 21 flows upward, and the second oxide layer 5 between the second substrate 2 and the third substrate 4, the gas chamber 51 and the perforation 21 of the second substrate 2 and The gas passages 41 of the third substrate 4 communicate with each other, so that the gas can enter the gas chamber 51 through the perforations 21, and is discharged upward from the gas passage 41 to achieve the transmission. Effect gases.

Please refer to FIG. 2A to FIG. 2C for the operation of the micro-electromechanical pump 100 manufactured by the semiconductor process for the semiconductor process; please refer to FIG. 2A for the lower electrode layer 61 of the piezoelectric component 6 and The upper electrode 64 receives the externally transmitted driving voltage and driving signal (not shown), and conducts it to the piezoelectric layer 62. At this time, the piezoelectric layer 62 receives the driving voltage and the driving signal, and the piezoelectric effect The influence starts to be deformed, and the amount of change and frequency of the deformation is controlled by the driving voltage and the driving signal, and the piezoelectric layer 62 starts to be deformed by the driving voltage and the driving signal, and then the vibrating portion 44 of the third substrate 4 starts to be displaced. And the piezoelectric component 6 drives the vibrating portion 44 to be displaced upward to open the distance between the second oxide layer 5, so that the volume of the gas chamber 51 of the second oxide layer 5 is increased, and a negative pressure is formed in the gas chamber 51. The gas outside the MEMS pump 100 is taken into the inlet chamber 32 of the first oxide layer 3 and introduced into the confluence chamber 32 of the first oxide layer 3; again, as shown in FIG. 2B, when the vibrating portion 44 is subjected to piezoelectric When the traction of the assembly 6 is displaced upward, The resonance portion 24 of the second substrate 2 is displaced upward by the influence of the resonance principle, and when the resonance portion 24 is displaced upward, the space of the gas chamber 51 is compressed, and the gas in the gas chamber 51 is pushed toward the third substrate 4. The passage 41 is moved to allow the gas to be discharged upward through the gas passage 41. At the same time, when the resonance portion 24 is displaced upward to compress the gas chamber 51, the volume of the manifold chamber 32 is lifted by the displacement of the resonance portion 24, and a negative pressure is formed inside thereof. The gas outside the microelectromechanical pump 100 is continuously sucked into the gas through the air inlet hole 11; finally, as shown in FIG. 2C, when the piezoelectric component 6 drives the vibration portion 44 of the third substrate 4 to be displaced downward, the second substrate 2 The resonance portion 24 is also displaced downward by the vibration portion 44, and the gas that synchronously compresses the confluence chamber 32 moves toward the gas chamber 51 through the perforation 21 thereof, and the gas outside the micro electromechanical pump 100 is suspended by the intake hole 11. The gas of the gas chamber 51 is pushed into the gas passage 41 of the third substrate 4 and is discharged outward. When the subsequent piezoelectric assembly 6 resumes to move the vibrating portion 44 upward, the volume of the gas chamber 51 is greatly increased. Upgrade, and then have The drawing force draws the gas into the gas chamber 51 (as shown in FIG. 2A), and repeats the operation operations of FIGS. 2A to 2C, so that the piezoelectric component 6 can continuously drive the vibration portion 44 up and down, and synchronously interlocked. The resonance portion 24 is displaced up and down to change the internal pressure of the microelectromechanical pump 100, so that the gas is continuously extracted and exhausted to complete the gas transmission operation of the microelectromechanical pump 100.

In summary, the present invention provides a microelectromechanical pump, which mainly uses a semiconductor process to complete the structure of the microelectromechanical pump to further reduce the volume of the pump, making it lighter and thinner, reaching the micron level and reducing the past pump. The volume of Pu is too large to meet the limitation of micron size, which is of great industrial value.

This case has been modified by people who are familiar with the technology, but it is not intended to be protected by the scope of the patent application.

100‧‧‧Microelectromechanical pump

1‧‧‧First substrate

11‧‧‧Air intake

12‧‧‧ first upper surface

13‧‧‧First lower surface

2‧‧‧second substrate

21‧‧‧Perforation

22‧‧‧Second upper surface

23‧‧‧Second lower surface

24‧‧‧Resonance

25‧‧‧ Fixed Department

3‧‧‧First oxide layer

31‧‧‧Intake runner

32‧‧‧Confluence chamber

4‧‧‧ Third substrate

41‧‧‧ gas passage

42‧‧‧ third upper surface

43‧‧‧ Third lower surface

44‧‧‧Vibration Department

45‧‧‧The outer part

46‧‧‧Connecting Department

5‧‧‧Second oxide layer

51‧‧‧ gas chamber

6‧‧‧ Piezoelectric components

61‧‧‧ lower electrode layer

62‧‧‧ piezoelectric layer

63‧‧‧Insulation

64‧‧‧Upper electrode layer

Figure 1 is a schematic cross-sectional view of a microelectromechanical pump in this case. Fig. 2A to Fig. 2C are schematic diagrams showing the operation of the microelectromechanical pump in the present invention in Fig. 1. Fig. 3 is a schematic view showing the top view of the third substrate of the microelectromechanical pump in the present invention in Fig. 1.

Claims (12)

A microelectromechanical pump comprising: a first substrate formed by a semiconductor process and having a first thickness formed by a thinning process and formed by lithography to form at least one gas inlet; The layer is stacked on the first substrate by a semiconductor process, and formed by at least one inlet flow channel and a confluence chamber through a photolithography process, and one end of the inlet flow path and the confluence cavity The other end of the chamber communicates with the air inlet hole; the second substrate is formed by a semiconductor process and is formed by a thinning process to have a second thickness, which is stacked on the first oxide layer and transmitted through the lithography The etching is formed to have a through hole which is misaligned with the inlet hole of the first substrate, and the through hole is in communication with the confluence chamber of the first oxide layer; and a second oxide layer is formed by a sputtering semiconductor process And stacked on the second substrate, and forming a gas chamber forming a central recess through a photolithography process; a third substrate is formed through a semiconductor process and is thinned through the process And having a third thickness stacked on the second oxide layer and formed by photolithography to form a plurality of gas channels, the gas channel and the second substrate being misaligned, and the second oxidation The gas chamber of the layer is respectively in communication with the perforation of the second substrate and the gas channel of the third substrate; and a piezoelectric component is formed by the semiconductor process to be stacked on the third substrate. The microelectromechanical pump according to claim 1, wherein the first substrate, the second substrate and the third substrate are both processed by a semiconductor process of a crystal growth process. The microelectromechanical pump of claim 2, wherein the germanium wafer is a polysilicon wafer. The MEMS pump of claim 1, wherein the piezoelectric component further comprises: a lower electrode layer; a piezoelectric layer stacked on the lower electrode layer; and an insulating layer covering the piezoelectric layer a portion of the surface and a portion of the surface of the lower electrode layer; and an upper electrode layer stacked on the insulating layer and the remaining surface of the piezoelectric layer not provided with an insulating layer for electrically connecting to the piezoelectric layer. The microelectromechanical pump of claim 1, wherein the air inlet of the first substrate is tapered. The microelectromechanical pump of claim 1, wherein the first thickness is between 150 and 200 microns. The microelectromechanical pump of claim 1, wherein the second thickness is between 2 and 5 microns. The MEMS pump of claim 1, wherein the third thickness is between 10 and 20 microns. The microelectromechanical pump of claim 1, wherein the first thickness is greater than the third thickness, and the third thickness is greater than the second thickness. The microelectromechanical pump of claim 1, wherein the first oxide layer has a thickness between 10 and 20 microns. The microelectromechanical pump of claim 1, wherein the second oxide layer has a thickness of between 0.5 and 2 microns. The microelectromechanical pump of claim 1, wherein the first oxide layer has a thickness greater than a thickness of the second oxide layer.