CN113917688A - Wearable display device - Google Patents
Wearable display device Download PDFInfo
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- CN113917688A CN113917688A CN202010661380.9A CN202010661380A CN113917688A CN 113917688 A CN113917688 A CN 113917688A CN 202010661380 A CN202010661380 A CN 202010661380A CN 113917688 A CN113917688 A CN 113917688A
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 39
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 238000005137 deposition process Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 28
- 230000006835 compression Effects 0.000 claims description 21
- 238000007906 compression Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000725 suspension Substances 0.000 claims description 9
- 238000009833 condensation Methods 0.000 claims description 5
- 230000005494 condensation Effects 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000003190 augmentative effect Effects 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
- G02B27/017—Head mounted
- G02B27/0176—Head mounted characterised by mechanical features
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B45/00—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids
- F04B45/04—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids having plate-like flexible members, e.g. diaphragms
- F04B45/041—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids having plate-like flexible members, e.g. diaphragms double acting plate-like flexible pumping member
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B45/00—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids
- F04B45/04—Pumps or pumping installations having flexible working members and specially adapted for elastic fluids having plate-like flexible members, e.g. diaphragms
- F04B45/047—Pumps having electric drive
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Reciprocating Pumps (AREA)
Abstract
A wearable display device comprises a device body and a driving module. The device body is provided with a mirror bracket, two mirror legs and at least one display. The two glasses legs are respectively connected with two ends of the glasses frame, and the two displays are arranged on the glasses frame. The driving module is arranged in the mirror bracket and comprises a microprocessor, an optical display module and a heat dissipation module. The optical display module is electrically connected with the microprocessor and displays the optical image on at least one display. The heat dissipation assembly includes a heat dissipation base and two heat pipes. The two heat conduction pipes are arranged on the heat dissipation seat, and the heat dissipation seat is close to the microprocessor. The heat energy generated by the microprocessor during operation is conducted to the heat dissipation seat, and the heat exchange is carried out on the heat dissipation seat through the two heat conduction pipes.
Description
[ technical field ] A method for producing a semiconductor device
The present disclosure relates to a wearable display device, and more particularly, to a head-mounted device having a heat dissipation assembly with excellent heat dissipation effect.
[ background of the invention ]
In recent years, with the rapid development of scientific and technological life, the specifications, equipment and functions of the surroundings related to the virtual reality are rapidly upgraded, and in order to meet the needs, the capability of the processing chip inside the wearable display device must be greatly improved, but if the heat energy generated by the processing chip during high-speed operation cannot be quickly removed, the performance of the wearable display device will be greatly affected, and how to provide a wearable display device that improves the above problems is the main subject to be solved by the present invention.
[ summary of the invention ]
The main objective of the present disclosure is to provide a wearable display device, which utilizes a heat dissipation assembly with fast heat dissipation to reduce the operating temperature of the wearable display device during operation.
One broad aspect of the present disclosure is a wearable display device, comprising: the device body is provided with a mirror bracket, two mirror legs and at least one display, the two mirror legs are respectively connected with two ends of the mirror bracket, and the two displays are arranged on the mirror bracket; a driving module, set up in this mirror holder of this device body, include: a microprocessor; an optical display module electrically connected with the microprocessor and used for displaying the optical image on the at least one display; and a heat dissipation group, which comprises a heat dissipation seat and two heat conduction pipes, wherein the two heat conduction pipes are arranged on the heat dissipation seat, the heat dissipation seat is close to the microprocessor, the heat energy generated when the microprocessor operates is conducted to the heat dissipation seat, and the two heat conduction pipes carry out heat exchange on the heat dissipation seat.
[ description of the drawings ]
Fig. 1 is a schematic structural view of the wearable display device.
Fig. 2 is a schematic cross-sectional structure diagram of a driving module of the wearable display device.
Fig. 3 is a schematic cross-sectional view of a condensing chip of the wearable display device.
Fig. 4A is a schematic cross-sectional view of a mems blower with a wearable display device.
Fig. 4B to 4C are schematic operation diagrams of the micro-electromechanical blower shown in fig. 4A.
Fig. 5A is a schematic cross-sectional structure diagram of the mems pump of the display device.
Fig. 5B to 5C are schematic operation diagrams of the mems pump shown in fig. 5A.
[ notation ] to show
100: wearable display device
1: device body
11: spectacle frame
12: glasses leg
13: display device
2: drive module
21: microprocessor
22: optical display set
23: heat radiation set
231: heat radiation seat
232: heat conduction pipe
233: heat dissipating liquid
234: liquid pump
235: condensation chip
235 a: refrigeration unit
235 b: condensation conduction piece
235 c: heat dissipation conduction piece
236: micro pump
3: micro-electromechanical blower
31: air outlet base
311: air outlet chamber
312: compression chamber
313: through hole
32: first oxide layer
33: jet resonance layer
331: air inlet hole
332: gas injection hole
333: suspension section
34: second oxide layer
341: resonant cavity section
35: resonant cavity layer
351: resonant cavity
36: first piezoelectric component
361: a first lower electrode layer
362: first piezoelectric layer
363: a first insulating layer
364: a first upper electrode layer
4: MEMS pump
41: air inlet base
411: air intake
42: third oxide layer
421: confluence channel
422: confluence chamber
43: resonant layer
431: center hole
432: vibrating section
433: fixing segment
44: a fourth oxide layer
441: compression chamber segment
45: vibration layer
451: actuating section
452: outer rim section
453: air hole
46: second piezoelectric element
461: a second lower electrode layer
462: second piezoelectric layer
463: a second insulating layer
464: second upper electrode layer
[ detailed description ] embodiments
Embodiments that embody the features and advantages of this disclosure will be described in detail in the description that follows. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
As shown in fig. 1, the present disclosure provides a wearable display device 100, including: the display device comprises a device body 1 and a driving module 2, wherein the device body 1 is provided with a mirror bracket 11, two mirror legs 12 and at least one display 13, the two mirror legs 12 are respectively connected to two ends of the mirror bracket 11, the displays 13 are two displays 13 in the embodiment and are respectively arranged on the mirror bracket 11, and the driving module 2 is arranged in the mirror bracket 11 of the device body 1 and corresponds to the two displays 13; the user wears the wearable display device 100 through the temple 12, positions the two displays 13 in front of the eyes of the user, respectively, and the driving module 2 is adjacent to the displays 13, and displays VR (Virtual Reality), AR (Augmented Reality), MR (Mixed Reality), or XR (Extended Reality) on the displays 13 for the user to view.
Referring to fig. 2, the driving module 2 includes a microprocessor 21, an optical display unit 22 and a heat dissipation unit 23, the optical display unit 22 is electrically connected to the microprocessor 21, and the optical display unit 22 receives signals from the microprocessor 21 and provides optical components for displaying images such as VR (virtual reality), AR (augmented reality), MR (mixed reality), XR (augmented reality), etc. on the display 13. The heat dissipation assembly 23 includes a heat sink 231 and two heat pipes 232. The two heat pipes 232 are respectively disposed on the heat sink 231 and extend outward from two sides of the heat sink 231. The heat sink 231 is closely adjacent to the microprocessor 21, so that the heat generated by the microprocessor 21 is conducted to the heat sink 231, and the two heat pipes 232 exchange heat with the heat sink 231, thereby reducing the operating temperature of the microprocessor 21.
Referring to fig. 2, the two heat pipes 232 are respectively provided with a heat dissipating fluid 233 therein, and the heat dissipating fluid 233 flows to increase the heat transfer rate and enhance the heat dissipating effect. In the present embodiment, the heat dissipation assembly 23 further includes two liquid pumps 234, and the two liquid pumps 234 are respectively connected to the two heat pipes 232. The operation of the liquid pump 234 increases the flow rate of the heat-dissipating liquid 233, thereby accelerating the heat exchange action of the heat pipe 232.
Referring to fig. 2 and 3, the heat dissipation assembly 23 further includes a plurality of condensing chips 235 respectively connected to the two heat pipes 232, wherein the condensing chips 235 include a refrigeration unit 235a, a condensing conductor 235b and a heat dissipation conductor 235c, and the refrigeration unit 235a is sandwiched between the condensing conductor 235b and the heat dissipation conductor 235c and is packaged together to form the condensing chips 235. The condensing conductor 235b of the condensing chip 235 is connected to the outer surface of the heat pipe 232 for performing heat exchange on the heat pipe 232 to reduce the temperature of the heat pipe 232 and the heat dissipating liquid 233, and the heat source is dissipated by the heat dissipating conductor 235c to achieve the effect of temperature reduction.
As mentioned above, the heat dissipation assembly 23 further includes a micro pump 236, the micro pump 236 is disposed at a position corresponding to the microprocessor 21, and the micro pump 236 is a gas pump, and the gas is rapidly and continuously guided to flow through the surface of the microprocessor 21, so that the gas flow exchanges heat with the microprocessor 21, thereby improving the cooling effect.
In a first embodiment of the micro-pump 236 shown in fig. 4A-4C, the micro-pump 236 may be a micro-electromechanical blower 3 comprising: an air outlet base 31, a first oxidation layer 32, an air injection resonance layer 33, a second oxidation layer 34, a resonance cavity layer 35 and a first piezoelectric element 36 are all manufactured by semiconductor process. The semiconductor process of the present embodiment includes an etching process and a deposition process. The etching process may be a wet etching process, a dry etching process or a combination thereof, but not limited thereto. The deposition process may be a physical vapor deposition Process (PVD), a chemical vapor deposition process (CVD), or a combination of both. The following description is not repeated.
The gas outlet base 31 is manufactured by a silicon substrate etching process to form a gas outlet chamber 311 and a compression chamber 312, and a through hole 313 is etched between the gas outlet chamber 311 and the compression chamber 312; the first oxide layer 32 is formed by deposition process and is stacked on the gas outlet base 31, and is etched and removed corresponding to the portion of the compression chamber 312; the aforementioned jet resonance layer 33 is formed by a silicon substrate deposition process and is superimposed on the first oxide layer 32, and forms a plurality of air inlet holes 331 by partially etching and removing corresponding to the compression chamber 312, and forms a jet hole 332 by partially etching and removing corresponding to the center of the compression chamber 312, so as to form a suspension section 333 capable of moving and vibrating between the air inlet holes 331 and the jet hole 332; the second oxide layer 34 is deposited on the suspension section 333 of the jet resonance layer 33, and is partially etched away to form a resonance cavity section 341, which is connected to the jet hole 332; the resonant cavity layer 35 is formed by a silicon substrate etching process to form a resonant cavity 351, and is correspondingly bonded and overlapped on the second oxide layer 34, so that the resonant cavity 351 corresponds to the resonant cavity section 341 of the second oxide layer 34; the first piezoelectric element 36 is formed by a deposition process to be superimposed on the resonant cavity layer 35, and includes a first lower electrode layer 361, a first piezoelectric layer 362, a first insulating layer 363, and a first upper electrode layer 364, wherein the first lower electrode layer 361 is formed by a deposition process to be superimposed on the resonant cavity layer 35, the first piezoelectric layer 362 is formed by a deposition process to be superimposed on a portion of the surface of the first lower electrode layer 361, the first insulating layer 363 is formed by a deposition process to be superimposed on a portion of the surface of the first piezoelectric layer 362, and the first upper electrode layer 364 is formed by a deposition process to be superimposed on the surface of the first insulating layer 363 and the surface of the first piezoelectric layer 362 without the first insulating layer 363, so as to be electrically connected to the first piezoelectric layer 362.
As shown in fig. 4B to 4C, the first piezoelectric element 36 is driven to drive the gas injection resonance layer 33 to resonate, so that the suspension section 333 of the gas injection resonance layer 33 generates reciprocating vibration displacement, so as to attract gas to enter the compression chamber 312 through the plurality of gas inlet holes 331, and then to be reintroduced into the resonance chamber 351 through the gas injection holes 332, and by controlling the vibration frequency of the gas in the resonance chamber 351 to be approximately the same as the vibration frequency of the suspension section 333, the resonance chamber 351 and the suspension section 333 can generate a Helmholtz resonance effect (Helmholtz resonance), and then the concentrated gas exhausted from the resonance chamber 351 is introduced into the compression chamber 312, and passes through the through holes 313 to be exhausted from the gas outlet chamber 311 at high pressure, so as to achieve high-pressure gas transmission and improve gas transmission efficiency.
In a second embodiment of the micro-pump 236 shown in fig. 5A to 5C, the micro-pump 236 may be a micro-electromechanical pump 4, as shown in fig. 5A, 5B to 5C, the micro-electromechanical pump 4 includes an air inlet base 41, a third oxide layer 42, a resonant layer 43, a fourth oxide layer 44, a vibrating layer 45 and a second piezoelectric element 46, all fabricated by a semiconductor process. The semiconductor process of the present embodiment includes an etching process and a deposition process. The etching process may be a wet etching process, a dry etching process or a combination thereof, but not limited thereto. The deposition process may be a physical vapor deposition Process (PVD), a chemical vapor deposition process (CVD), or a combination of both. The following description is not repeated.
The gas inlet base 41 is fabricated by a silicon substrate etching process to form at least one gas inlet hole 411; the third oxide layer 42 is formed by a deposition process and stacked on the inlet base 41, and a plurality of converging channels 421 and a converging chamber 422 are formed by an etching process, wherein the converging channels 421 are communicated between the converging chamber 422 and the inlet holes 411 of the inlet base 41; the resonant layer 43 is formed by a silicon substrate deposition process and stacked on the third oxide layer 42, and an etching process is performed to form a central through hole 431, a vibration section 432 and a fixed section 433, wherein the central through hole 431 is formed at the center of the resonant layer 43, the vibration section 432 is formed at the peripheral region of the central through hole 431, and the fixed section 433 is formed at the peripheral region of the resonant layer 43; the fourth oxide layer 44 is formed by deposition process and is overlapped on the resonant layer 43, and is partially etched to form a compression cavity section 441; the vibration layer 45 is formed by a silicon substrate deposition process to be superimposed on the fourth oxide layer 44, and an actuating section 451, a rim section 452 and a plurality of air holes 453 are formed by an etching process, wherein the actuating section 451 is formed at the central portion, the rim section 452 is formed to surround the periphery of the actuating section 451, the plurality of air holes 453 are respectively formed between the actuating section 451 and the rim section 452, and the vibration layer 45 and the compression cavity section 441 of the fourth oxide layer 44 define a chamber; the second piezoelectric element 46 is formed by a deposition process to be stacked on the actuating section 451 of the vibrating layer 45, and includes a second lower electrode layer 461, a second piezoelectric layer 462, a second insulating layer 463 and a second upper electrode layer 464, wherein the second lower electrode layer 461 is formed by a deposition process to be stacked on the actuating section 451 of the vibrating layer 45, the second piezoelectric layer 462 is formed by a deposition process to be stacked on a portion of the surface of the second lower electrode layer 461, the second insulating layer 463 is formed by a deposition process to be stacked on a portion of the surface of the second piezoelectric layer 462, and the second upper electrode layer 464 is formed by a deposition process to be stacked on the surface of the second insulating layer 463 and the surface of the second piezoelectric layer 462 not provided with the second insulating layer 463, so as to be electrically connected to the second piezoelectric layer 462.
As shown in fig. 4B to 4C, the second piezoelectric element 46 is driven to drive the vibration layer 45 and the resonance layer 43 to generate resonance displacement, so that the introduced gas enters from the gas inlet 411, is collected into the collecting chamber 422 through the collecting channel 421, passes through the central through hole 431 of the resonance layer 43, and is discharged from the plurality of gas holes 453 of the vibration layer 45, thereby realizing a large flow rate of the gas.
In summary, the wearable display device provided by the present disclosure utilizes the heat dissipation assembly to perform the heat dissipation and cooling actions on the driving module, the two heat pipes in the heat dissipation assembly extend toward the two ends respectively, thereby increasing the heat dissipation area, increasing the heat conductivity through the heat dissipation liquid, accelerating the conduction of the heat dissipation liquid by the liquid pump, increasing the conduction speed, performing only heat exchange through the condensation chip, and guiding the gas by the micro pump, thereby having excellent heat dissipation effect and great industrial applicability and advancement.
Claims (7)
1. A wearable display device, comprising:
the device body is provided with a mirror bracket, two mirror legs and at least one display, the two mirror legs are respectively connected with two ends of the mirror bracket, and the two displays are arranged on the mirror bracket; and
a driving module, set up in this mirror holder of this device body, include:
a microprocessor;
an optical display module electrically connected with the microprocessor and respectively displaying the optical images on the at least one display; and
and the heat dissipation group comprises a heat dissipation seat and two heat conduction pipes, the two heat conduction pipes are arranged on the heat dissipation seat, the heat dissipation seat is close to the microprocessor, the heat energy generated when the microprocessor operates is conducted to the heat dissipation seat, and the two heat conduction pipes carry out heat exchange on the heat dissipation seat.
2. The wearable display device of claim 1, wherein the two heat pipes each contain a heat dissipating fluid.
3. The wearable display device of claim 2, wherein the heat sink comprises two liquid pumps, and the two liquid pumps are respectively connected to the two heat pipes to accelerate the heat exchange of the two heat pipes.
4. The wearable display device of claim 1, wherein the heat sink further comprises a micro pump, and the micro pump is disposed corresponding to the microprocessor.
5. The wearable display device of claim 4, wherein the micropump is a microelectromechanical pump comprising:
an air outlet base, an air outlet chamber and a compression chamber are manufactured by a silicon substrate etching process, and a through hole is etched between the air outlet chamber and the compression chamber;
a first oxide layer formed by deposition process and superposed on the gas outlet base, and etched to remove the part corresponding to the compression chamber;
a jet resonance layer which is generated by a silicon substrate deposition process and is superposed on the first oxide layer, and forms a plurality of air inlet holes corresponding to partial etching removal of the compression chamber, and forms a jet hole corresponding to the partial etching removal of the center of the compression chamber, so that a suspension section capable of moving and vibrating is formed between the air inlet holes and the jet hole;
a second oxide layer formed by deposition process and overlapped on the suspension section of the jet resonance layer, and partially etched to form a resonance cavity section and communicated with the jet hole;
a resonant cavity layer, which is made by a silicon substrate etching process and is correspondingly bonded and overlapped on the second oxide layer to promote the resonant cavity to correspond to the resonant cavity section of the second oxide layer;
a first piezoelectric component, formed by deposition process and superposed on the resonant cavity layer, including a first lower electrode layer, a first piezoelectric layer, a first insulating layer and a first upper electrode layer, wherein the first lower electrode layer is formed by deposition process and superposed on the resonant cavity layer, the first piezoelectric layer is formed by deposition process and superposed on part of the surface of the first lower electrode layer, the first insulating layer is formed by deposition process and superposed on part of the surface of the first piezoelectric layer, the first upper electrode layer is formed by deposition process and superposed on the surface of the first insulating layer and the surface of the first piezoelectric layer not provided with the first insulating layer, so as to be electrically connected with the first piezoelectric layer;
the first piezoelectric component is driven to drive the jet resonance layer to generate resonance, so that the suspension section of the jet resonance layer generates reciprocating vibration displacement to attract a gas to enter the compression chamber through the plurality of gas inlet holes and to be guided into the resonant cavity through the gas jet holes, the gas is discharged from the resonant cavity and concentrated to be guided into the compression chamber, passes through the through hole and then is discharged from the gas outlet chamber at high pressure, and the transmission flow of the gas is realized.
6. The wearable display device of claim 4, wherein the micropump is a micro-electromechanical blower comprising:
an air inlet base, which is used for manufacturing at least one air inlet hole by a silicon substrate etching process;
a third oxide layer formed on the air inlet base by deposition process and having multiple converging channels and a converging chamber formed by etching process, wherein the converging channels are communicated between the converging chamber and the air inlet of the air inlet base;
a resonance layer formed by a silicon substrate deposition process and superposed on the third oxide layer, and an etching process to form a central through hole, a vibration section and a fixed section, wherein the central through hole is formed at the center of the resonance layer, the vibration section is formed at the peripheral area of the central through hole, and the fixed section is formed at the peripheral area of the resonance layer;
a fourth oxide layer formed by deposition process and overlapped on the resonance layer, and partially etched to form a compression cavity section;
a vibration layer which is formed by a silicon substrate deposition process and is superposed on the fourth oxide layer, and an actuating section, an outer edge section and a plurality of air holes are formed by an etching process, wherein the actuating section is formed at the central part, the outer edge section forms a periphery surrounding the actuating section, the plurality of air holes are respectively formed between the actuating section and the outer edge section, and the vibration layer and the compression cavity section of the fourth oxide layer define a compression chamber; and
a second piezoelectric component, which is formed by deposition process and is superposed on the actuating section of the vibration layer, and includes a second lower electrode layer, a second piezoelectric layer, a second insulating layer and a second upper electrode layer, wherein the second lower electrode layer is formed by deposition process and is superposed on the actuating section of the vibration layer, the second piezoelectric layer is formed by deposition process and is superposed on a part of the surface of the second lower electrode layer, the second insulating layer is formed by deposition process and is superposed on a part of the surface of the second piezoelectric layer, and the second upper electrode layer is formed by deposition process and is superposed on the surface of the second insulating layer and the surface of the second piezoelectric layer not provided with the second insulating layer, so as to be electrically connected with the second piezoelectric layer;
the second piezoelectric component is driven to drive the vibration layer and the resonance layer to generate resonance displacement, a gas is introduced into the gas inlet hole, is collected into the collecting chamber through the collecting channel, passes through the central through hole of the vibration layer and is discharged from the plurality of gas holes of the vibration layer, and the gas is transmitted and flows.
7. The wearable display device of claim 1, wherein the heat dissipation assembly further comprises a plurality of condensation chips, and the condensation chips are respectively connected to the two heat pipes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010661380.9A CN113917688A (en) | 2020-07-10 | 2020-07-10 | Wearable display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010661380.9A CN113917688A (en) | 2020-07-10 | 2020-07-10 | Wearable display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113917688A true CN113917688A (en) | 2022-01-11 |
Family
ID=79232528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010661380.9A Pending CN113917688A (en) | 2020-07-10 | 2020-07-10 | Wearable display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113917688A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104508537A (en) * | 2012-04-24 | 2015-04-08 | 赛尔西奥·卡拉瓦哈尔·赛尔西奥·马丁 | Spectacles having a built-in computer |
| CN108345109A (en) * | 2017-01-25 | 2018-07-31 | 研能科技股份有限公司 | Wear-type virtual reality display device |
| CN108508605A (en) * | 2018-03-25 | 2018-09-07 | 了了网络科技（苏州）有限公司 | A kind of comfortable heat radiating type VR glasses based on virtual reality interaction |
| CN208013561U (en) * | 2018-04-09 | 2018-10-26 | 歌尔科技有限公司 | One kind wearing display equipment and its cooling system |
| US20180376626A1 (en) * | 2017-06-21 | 2018-12-27 | Microsoft Technology Licensing, Llc | Thermal dissipation system for wearable electronic devices |
| CN209182579U (en) * | 2018-11-07 | 2019-07-30 | 兰州市西固区柏雨广告传媒有限公司 | A kind of VR glasses of water circulation type heat dissipation |
| CN110905789A (en) * | 2018-09-17 | 2020-03-24 | 研能科技股份有限公司 | MEMS pump |
-
2020
- 2020-07-10 CN CN202010661380.9A patent/CN113917688A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104508537A (en) * | 2012-04-24 | 2015-04-08 | 赛尔西奥·卡拉瓦哈尔·赛尔西奥·马丁 | Spectacles having a built-in computer |
| CN108345109A (en) * | 2017-01-25 | 2018-07-31 | 研能科技股份有限公司 | Wear-type virtual reality display device |
| US20180376626A1 (en) * | 2017-06-21 | 2018-12-27 | Microsoft Technology Licensing, Llc | Thermal dissipation system for wearable electronic devices |
| CN108508605A (en) * | 2018-03-25 | 2018-09-07 | 了了网络科技（苏州）有限公司 | A kind of comfortable heat radiating type VR glasses based on virtual reality interaction |
| CN208013561U (en) * | 2018-04-09 | 2018-10-26 | 歌尔科技有限公司 | One kind wearing display equipment and its cooling system |
| CN110905789A (en) * | 2018-09-17 | 2020-03-24 | 研能科技股份有限公司 | MEMS pump |
| CN209182579U (en) * | 2018-11-07 | 2019-07-30 | 兰州市西固区柏雨广告传媒有限公司 | A kind of VR glasses of water circulation type heat dissipation |
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