TWM580642U - Miniature fluid actuator - Google Patents

Abstract

A microfluidic actuator comprising: a substrate having a plurality of first outflow holes and a plurality of second outflow holes; a cavity layer having a reservoir chamber; a vibration layer; a first metal layer; a piezoelectric actuation layer; a second metal layer having an upper electrode pad and a lower electrode pad; an inlet layer; a resonance layer; and an array of aperture sheets; providing a driving power source having different phase charges to the upper electrode bonding a pad and a lower electrode pad for driving and controlling the vibration layer to generate up and down displacement, allowing fluid to be drawn in from the inlet layer, confluent to the reservoir chamber, and finally being squeezed through the plurality of first outflow holes and the plurality of second outflows The holes are pushed open and the array of orifices is pushed out to complete the fluid transfer.

Description

Microfluidic actuator

The present invention relates to an actuator, and more particularly to a microfluidic actuator fabricated using a microelectromechanical surface type and a body shaping process.

At present, in various fields, such as medicine, computer technology, printing, energy and other industries, the products are developing in the direction of refinement and miniaturization. Among them, products such as micro-pumps, sprayers, inkjet heads, industrial printing devices, etc. Fluid actuators are a key technology.

With the rapid development of technology, the application of fluid transport structures is becoming more and more diversified. For industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., even the most popular wearable devices can see its shadow. It can be seen that the conventional fluid actuators have gradually become smaller toward the device and the flow rate is maximized.

A variety of microfluidic actuators manufactured by microelectromechanical processes have been developed in the prior art. However, the effectiveness of fluid transport through innovative structures is still an important part of development.

The primary objective of the present invention is to provide a valved microfluidic actuator that is fabricated using a microelectromechanical process to transfer fluid. The microfluidic actuator of this case is fabricated using a microelectromechanical surface type and a body shape processing process, and is supplemented by a packaging technique.

A generalized embodiment of the present invention is a microfluidic actuator comprising: a substrate, a cavity layer, a vibration layer, a first metal layer, a piezoelectric actuation layer, an isolation layer, and a second metal layer. a waterproof layer, a photoresist layer, an inlet layer, a first-order layer, a resonant layer, and an array of aperture sheets. The substrate has a first surface and a second surface, and forms an exit trench, a plurality of first outflow holes, and a plurality of second outflow holes through an etching process. The outlet groove is in communication with a plurality of first outflow holes and a plurality of second outflow holes. A plurality of second outflow holes are disposed outside the plurality of first outflow holes. The cavity layer is formed on the first surface of the substrate through a deposition process, and forms a reservoir chamber through an etching process. The reservoir chamber is in communication with a plurality of first outflow holes and a plurality of second outflow holes. The vibration layer is formed on the cavity layer through a deposition process, and a plurality of fluid trenches and a vibration region are formed through an etching process. A plurality of fluid grooves are symmetrically formed on opposite sides of the vibration layer to define a vibration zone. The first metal layer is formed on the vibration layer through a deposition process, and forms a lower electrode region, a plurality of barrier regions, and a plurality of gaps through an etching process. The lower electrode region is formed at a position corresponding to the vibration region. A plurality of gaps are formed between the lower electrode region and the plurality of barrier regions. A plurality of barrier regions are formed corresponding to the outer side of the plurality of fluid trenches. The piezoelectric actuation layer is formed on the first metal layer through a deposition process, and an actuation region is formed through an etching process at a position corresponding to the electrode region below the first metal layer. The isolation layer is formed on the piezoelectric actuation layer and the first metal layer through a deposition process, and a plurality of spacers are formed in the plurality of gaps through the etching process. The second metal layer is formed on the piezoelectric actuation layer, the first metal layer and the isolation layer through a deposition process, and an upper electrode pad and a lower electrode pad are formed on the first metal layer through an etching process. The waterproof layer is formed on the first metal layer, the second metal layer and the isolation layer through a coating process, and exposes the upper electrode pad and the lower electrode pad through an etching process. The photoresist layer is formed on the first metal layer, the second metal layer, and the waterproof layer through a developing process. The inlet layer forms a plurality of fluid inlets through an etching process or a laser process. The flow channel layer is formed on the inlet layer, and forms an inflow chamber, a plurality of inflow channels, and a plurality of flow channel inlets through the lithography process. A plurality of flow path inlets are respectively in communication with a plurality of fluid inlets of the inlet layer. A plurality of inflow channels and a plurality of channel inlets are disposed around the inflow chamber. A plurality of inflow channels are connected between the plurality of flow path inlets and the inflow chamber. The resonant layer is formed on the flow channel layer by a rolling process, and a cavity through hole is formed through the etching process, and is bonded to the photoresist layer through the flip alignment process and the wafer bonding process. The array aperture sheet is formed on the substrate through an adhesive process. The array aperture sheet has a plurality of aperture holes. The plurality of aperture holes and the plurality of first outflow holes and the plurality of second outflow holes are offset from each other, thereby closing a plurality of first outflow holes and a plurality of second outflow holes of the first substrate. Providing a driving power source with different phase charges to the upper electrode pad and the lower electrode pad to drive and control the vibration region of the vibration layer to generate up and down displacement, so that the fluid is sucked from the plurality of fluid inlets, and flows through the plurality of inflow channels to the inflow chamber And flowing through the cavity through hole to the resonance chamber, finally flowing through a plurality of fluid grooves to the storage chamber, and finally being squeezed through a plurality of first outflow holes and a plurality of second outflow holes and pushing After the array of apertures is opened, a plurality of apertures are discharged from the apertures to complete fluid transfer.

Some exemplary embodiments embodying the features and advantages of the present invention are described in detail in the following description. It is to be understood that the present invention is capable of various modifications in various embodiments, and is not intended to limit the scope of the invention.

The microfluidic actuator of the present invention is used to transport a fluid. Referring to FIG. 1A and FIG. 1B, in the embodiment of the present invention, the microfluidic actuator 100 comprises: a first substrate 1a, a cavity layer 1b, and a vibration layer 1c. a first metal layer 1d, a piezoelectric actuation layer 1e, a spacer layer 1f, a second metal layer 1g, a waterproof layer 1h, a second substrate 1i, a film adhesive layer 1j, an inlet layer 1k, A resonant layer 1m, a mask layer 1n, an array of aperture sheets 1o, a first photoresist layer M1, a second photoresist layer M2, a first-order track layer M3, and a third photoresist layer M4. Array aperture sheet 1o, first substrate 1a, cavity layer 1b, vibration layer 1c, first metal layer 1d, piezoelectric actuation layer 1e, isolation layer 1f, second metal layer 1g, waterproof layer 1h, second photoresist layer M2, the resonance layer 1m, the flow channel layer M3, and the inlet layer 1k are sequentially stacked and integrated, and the process thereof is as follows. In the first embodiment of the present invention, the microfluidic actuator 100 includes an actuating unit 10.

Referring to FIG. 2A, in the first embodiment of the present invention, the first substrate 1a is a germanium substrate. The first substrate 1a has a first surface 11a and a second surface 12a opposite to the first surface 11a. In the first embodiment of the present invention, the cavity layer 1b is formed on the first surface 11a of the first substrate 1a through a germanium dioxide material deposition process, and the deposition process may be a physical vapor deposition process (PVD) or a chemical gas. Phase deposition process (CVD) or a combination of both, but not limited to this. In the first embodiment of the present invention, the vibration layer 1c is formed on the cavity layer 1b through a tantalum nitride material deposition process.

Referring to FIG. 2B and FIG. 3, in the first embodiment of the present invention, the vibration layer 1c forms a plurality of fluid grooves 11c and a vibration region 12c through an etching process. The fluid grooves 11c are symmetrically formed on opposite sides of the vibration layer 1c, thereby defining the vibration region 12c. It should be noted that, in the first embodiment of the present invention, the etching process may be a wet etching process, a dry etching process, or a combination of the two, but is not limited thereto. It is to be noted that, in the first embodiment of the present invention, the vibrating layer 1c has two fluid grooves 11c formed on opposite sides of the longitudinal direction of the vibrating layer 1c, but not limited thereto.

Referring to FIG. 2C and FIG. 2D, in the first embodiment of the present invention, the first metal layer 1d is formed on the vibration layer 1c through a first metal material deposition process. In the embodiment of the present invention, the first metal material is a titanium nitride metal material or a tantalum metal material, but is not limited thereto. The first metal layer 1d forms a lower electrode region 11d, a plurality of barrier regions 12d, a plurality of gaps 13d, and a plurality of first junction alignment marks AM1 through an etching process. The lower electrode region 11d is formed at a position corresponding to the vibration region 12c of the vibration layer 1c. A gap 13d is formed between the lower electrode region 11d and the barrier region 12d. The barrier region 12d corresponds to an outer position of the fluid groove 11c formed in the vibration layer 1c. The first bonding alignment mark AM1 is formed over the barrier region 12d.

Referring to FIG. 2E and FIG. 2F, in the first embodiment of the present invention, the piezoelectric actuation layer 1e is formed on the first metal layer 1d through a piezoelectric material deposition process, and is etched through the etching process to the corresponding first metal. The position of the electrode region 11d below the layer 1d forms an active region 11e.

Referring to FIG. 2G and FIG. 2H, in the first embodiment of the present invention, the isolation layer 1f is formed on the first metal layer 1d and the piezoelectric actuation layer 1e through a ceria deposition process, and is etched through the etching process. A plurality of spacers 11f are formed in the gap 13d of the first metal layer 1d.

Referring to FIG. 2I and FIG. 2J, in the first embodiment of the present invention, the first photoresist layer M1 is formed on the first metal layer 1d, the piezoelectric actuation layer 1e, and the isolation layer 1f through a photoresist coating process. And forming a first photoresist region M1a through a developing process. It should be noted that the photoresist coating process can be a spin coating process or a Laminate Rolling process, but it is not limited thereto, and can be changed according to the process requirements. In the first embodiment of the present invention, the first photoresist layer M1 is a negative photoresist, but is not limited thereto.

Referring to FIG. 2K, FIG. 2L, and FIG. 3, in the first embodiment of the present invention, the second metal layer 1g is formed on the first metal layer 1d and the piezoelectric actuation layer 1e through a second metal material deposition process. The isolation layer 1f and the first photoresist region M1a of the first photoresist layer M1 are over. In the first embodiment of the present invention, the second metal material is a gold metal material or an aluminum metal material, but is not limited thereto. The second metal layer 1g removes the first photoresist layer M1 through a lift-off process, thereby forming a pad isolation region 11g, an upper electrode region 12g, an upper electrode pad 13g, and a lower electrode bonding. Pad 14g. The upper electrode region 12g is formed over the active region 11e of the piezoelectric actuation layer 1e. The upper electrode pad 13g and the lower electrode pad 14g are formed on the first metal layer 1d and on opposite sides of the active region 11e of the piezoelectric actuator layer 1e. The upper electrode region 12g and the lower electrode pad 14g are separated by the pad isolation region 11g.

Referring to FIG. 2M, in the first embodiment of the present invention, the waterproof layer 1h is formed on the first metal layer 1d, the second metal layer 1g, and the isolation layer 1f through a coating process, and exposes the second metal layer 1g through an etching process. The upper electrode pad 13g and the lower electrode pad 14g. It should be noted that, in the first embodiment of the present invention, the waterproof layer 1h is a parylene material, but is not limited thereto. Parylene can be coated at room temperature and has the advantages of strong coating, high chemical resistance and good biocompatibility. It should be noted that the arrangement of the waterproof layer 1h can prevent the first metal layer 1d, the piezoelectric actuation layer 1e, and the second metal layer 1g from being corroded by the fluid to cause a short circuit.

Referring to FIG. 2N and FIG. 2O, in the first embodiment of the present invention, the second photoresist layer M2 is formed on the first metal layer 1d, the second metal layer 1g, and the waterproof layer 1h through a photoresist coating process, and A plurality of second photoresist holes M2a and a second photoresist opening M2b are formed through the developing process.

Referring to FIG. 2P, FIG. 2Q and FIG. 4, in the first embodiment of the present invention, the second substrate 1i is a glass substrate. The film adhesive layer 1j is formed on the second substrate 1i by a roll pressing process. The inlet layer 1k is formed in the film adhesive layer 1j by a rolling press. In the first embodiment of the present invention, the inlet layer 1k is made of a polyimide (PI) material, but is not limited thereto. The film adhesive layer 1j and the inlet layer 1k form a plurality of fluid inlets I and a plurality of joint alignment mark windows AW through an etching process. The joint registration mark window AW is formed on the outer side of the fluid inlet 1. It should be noted that the etching process of the forming fluid inlet I and the bonding alignment mark window AW is a dry etching process or a laser etching process, but is not limited thereto. In the first embodiment of the present invention, the microfluidic actuator 100 has four fluid inlets I located at four corners of the microfluidic actuator 100. In other embodiments, the number and distribution of the fluid inlets I depend on Design needs vary.

Referring to FIG. 2R, FIG. 2S and FIG. 4, in the first embodiment of the present invention, the flow channel layer M3 is formed on the inlet layer 1k through a photoresist coating process, and a plurality of flow path inlets M31 are formed through the development process. a cavity opening M32 and a plurality of inlet channels M33. The flow path inlet M31 is in communication with the fluid inlet I of the inlet layer 1k, respectively. The flow path inlet M31 and the inflow passage M33 are disposed around the cavity opening M32. The inflow passage M33 communicates between the flow passage inlet M31 and the cavity opening M32. In the first embodiment of the present invention, the flow channel layer M3 has four flow channel inlets M31 and four inlet flow channels M33. In other embodiments, the number of the flow channel inlets M31 and the inlet flow channels M33 can be changed according to design requirements. This is limited. In the first embodiment of the present invention, the flow channel layer M3 is a thick film photoresist, but is not limited thereto.

Referring to FIG. 2T and FIG. 2U, in the first embodiment of the present invention, the resonant layer 1m is formed on the flow channel layer M3 by a rolling process, and a cavity through hole 11m and a plurality of second joints are formed through an etching process. The alignment mark AM2. The resonant layer 1m covers the cavity opening M32 of the flow channel layer M3, thereby defining an inflow chamber C1. The cavity through hole 11m communicates with the inflow chamber C1 of the flow path layer M3. The second bonding alignment mark AM2 is formed on the outer side of the resonance layer 1m. The resonance layer 1m extends outward from the cavity through hole 11m to the outer edge of the corresponding inflow chamber C1 and is defined as a movable portion 12m. The resonance layer 1m extends outward from the movable portion 12m to the second joint registration mark AM2 as a fixed portion 13m. It should be noted that the etching process of forming the resonant layer 1m is a dry etching process or a laser etching process, but is not limited thereto.

Referring to FIG. 2V, in the first embodiment of the present invention, the resonant layer 1m is bonded to the second photoresist layer M2 through a flip alignment process and a wafer bonding process. In the flipping alignment process, the alignment alignment mark window AW is aligned with the corresponding first joint registration mark AM1 and the corresponding second joint registration mark AM2 to complete the alignment process. It should be noted that in the first embodiment of the present invention, since the flow channel layer M3 and the second substrate 1i are translucent, the Top-Side Transparent Alignment method can be used in the flip alignment process. Manual alignment is performed, so the alignment accuracy requirement is ±10 μm. In the first embodiment of the present invention, the resonant layer 1m is made of a polyimide (PI) material, but is not limited thereto.

Referring to FIG. 2W, in the first embodiment of the present invention, the second substrate 1i is removed by immersing the film adhesive layer 1j to remove the adhesiveness of the film adhesive layer 1j. It should be noted that in the first embodiment of the present invention, the time required for immersing the film adhesive layer 1j is extremely short, and the material properties of the film adhesive layer 1j and the flow channel layer M3 are different, so that the agent does not react to the flow channel layer M3. There is also no problem with Swelling.

Referring to FIG. 2X to FIG. 2Z, in the first embodiment of the present invention, the mask layer 1n is formed on the second surface 12a of the first substrate 1a through a germanium dioxide material deposition process, and a mask is formed through the etching process. The curtain opening 11n and the plurality of mask holes 12n expose the first substrate 1a. The second surface 12a of the first substrate 1a forms an exit trench 13a and a plurality of auxiliary trenches 14a along the mask opening 11n and the mask opening 12n through an etching process. The exit trench 13a and the auxiliary trench 14a have the same etch depth, and the etch depth is etched between the first surface 11a and the second surface 12a and is not in contact with the cavity layer 1b. The auxiliary grooves 14a are symmetrically disposed on opposite sides of the outlet groove 13a. A positioning post P is formed between each of the auxiliary grooves 14a and the outlet groove 13a.

Referring to FIG. 2AA and FIG. 2AB, in the first embodiment of the present invention, the mask layer 1n is further formed in the exit trench 13a and the auxiliary trench 14a of the first substrate 1a through a germanium dioxide material deposition process, and A plurality of first mask through holes 13n and a plurality of second mask through holes 14n are formed in the exit groove 13a through a precision perforation process. The second mask through hole 14n is symmetrically disposed outside the first mask through hole 13n. In the first embodiment of the present invention, the aperture of the first mask through hole 13n is smaller than the aperture of the second mask through hole 14n, but is not limited thereto. The first mask through hole 13n and the second mask through hole 14n have a perforation depth so as to be in contact with the first substrate 1a, so that the first substrate 1a is exposed. In the first embodiment of the present invention, the precision perforation process is a quasi-molecular laser processing process, but is not limited thereto.

Referring to FIG. 2AC, FIG. 2A and FIG. 5, in the first embodiment of the present invention, the first substrate 1a is etched through a low temperature deep etching process, and the first substrate 1a corresponds to the first mask via 13n and the second cover. A portion of the curtain through hole 14n is formed to form a plurality of first outflow holes 15a and a plurality of second outflow holes 16a of the first substrate 1a. The first outflow hole 15a is formed by being etched along the first mask through hole 13n to be in contact with the cavity layer 1b, respectively, and the second outflow hole 16a is etched to the cavity layer 1b along the second mask through hole 14n, respectively. It is formed by contact. Thereby, the second outflow holes 16a are disposed outside the first outflow holes 15a, and the diameter of each of the second outflow holes 16a is larger than the diameter of each of the first outflow holes 15a. In the first embodiment of the present invention, the low temperature deep etching process is a deep reactive ion etching process (BOSCH Process), but is not limited thereto. In the first embodiment of the present invention, each of the first outflow holes 15a and each of the second outflow holes 16a has a square cross section, but is not limited thereto.

It should be noted that, in the first embodiment of the present invention, the mask layer 1n forms the first mask through hole 13n and the second mask through hole 14n by using an excimer laser processing process to overcome the resistance of the photoresist and the contact type. Mask exposure is difficult to focus on and other issues. In addition, in the first embodiment of the present invention, the deep reactive ion etching process (BOSCH Process) is a low temperature process, which can avoid the high temperature generated by the processing, affect the polarity distribution of the rear end piezoelectric material, and cause depolarization reaction. Furthermore, in the first embodiment of the present invention, the perforation formed by the deep reactive ion etching process (BOSCH process) has a high aspect ratio, so the etching depth of the perforation is preferably 100 μm, so that the aperture of the perforation can be achieved. 10 μm or less, thereby maintaining the strength of the structure. In the first embodiment of the present invention, the arrangement of the exit trench 13a allows the perforation formed by the deep reactive ion etching process (BOSCH Process) to be reduced.

Referring to FIG. 2AD, in the first embodiment of the present invention, the cavity layer 1b is internally etched into a storage chamber C3 through a wet etching process. That is, the etchant flows through the first mask through hole 13n and the second mask through hole 14n, flows through the first outflow hole 15a and the second outflow hole 16a to the cavity layer 1b, and is then etched and released. A portion of the cavity layer 1b, thereby defining a reservoir chamber C3. Thereby, the reservoir chamber C3 communicates with the first outflow hole 15a and the second outflow hole 16a. It is worth noting that the mask layer 1n is also removed together while forming the reservoir chamber C3 through the wet etching process. After the completion of the storage chamber C3 to form and remove the mask layer 1n, the first outflow hole 15a and the second outflow hole 16a communicate with the outlet groove 13a.

It should be noted that, in the first embodiment of the present invention, since the distance between the two sides of the storage chamber C3 is slightly larger than the distance between the two sides of the outlet groove 13a, the aperture of each second outflow hole 16a is larger than each first The arrangement of the aperture of the outflow hole 15a facilitates the side erosion of the cavity of the reservoir chamber C3.

Referring to FIG. 2AE to FIG. 2AG, in the first embodiment of the present invention, the third photoresist layer M4 is formed on the inlet layer 1k by a rolling process, and a plurality of third photoresist openings M41 are formed through the developing process. The third photoresist opening M41 is provided corresponding to the positions of the upper electrode pad 13g and the lower electrode pad 14g. The upper electrode pad 13g and the lower electrode pad 14g are removed from the upper electrode pad 13g and the lower electrode pad 14g by an etching process, so that the upper electrode pad 13g and the lower electrode pad 14g are exposed. In the first embodiment of the present invention, the third photoresist layer M4 is a hard mask dry film photoresist, but is not limited thereto. It should be noted that, in order to avoid insufficient structural support force after the first substrate 1a is etched, the film of the third photoresist layer M4 may also be completed after the wafer bonding process of the resonant layer 1m and the second photoresist layer M2 is completed. Conducted, but not limited to this.

Referring to FIG. 2AH and FIG. 5, in the first embodiment of the present invention, the array aperture sheet 1o has a plurality of aperture holes 11o and a plurality of positioning holes 12o, and is attached to the outlet of the first substrate 1a through an adhesive process. The groove 13a and the auxiliary groove 14 are inside. The orifice hole 11o is disposed offset from the first outlet hole 15a and the second outlet hole 16a, thereby closing the first outlet hole 15a and the second outlet hole 16a to form a one-way valve to avoid transferring fluid The phenomenon of fluid backflow occurs. The positioning posts P of the first substrate 1a pass through the positioning holes 12o, respectively. In the first embodiment of the present invention, the positioning post P of the first substrate 1a is disposed such that the array aperture sheet 1o can be manually positioned and fixed by gluing. In other embodiments, the array aperture sheet 1o can be optically The positioning of the automatic alignment mode can increase the arrangement density of the aperture hole 11o of the array aperture piece 1o and the first outflow aperture 15a and the second outflow aperture 16a of the first substrate 1a. In the first embodiment of the present invention, the aperture of each positioning hole 12o is larger than the aperture of each positioning post P by 50 μm, but not limited thereto. In the first embodiment of the present invention, the array aperture sheet 1o is made of a polyimide (PI) material, but is not limited thereto. In the first embodiment of the present invention, the array aperture plate 1o has two positioning holes 12o. In other embodiments, the number of the positioning holes 12o can be changed according to design requirements, and is not limited thereto.

Referring to FIG. 3, it should be noted that in the first embodiment of the present invention, the two fluid grooves 11c of the vibration layer 1c are respectively formed on opposite sides of the longitudinal direction of the vibration layer 1c, and thus supported by the lateral direction of the vibration layer 1c. The vibration layer 1c can be made to have a better deformation amount in the longitudinal direction.

Referring to FIG. 1A, FIG. 1B, and FIG. 6A to FIG. 6E, in the first embodiment of the present invention, the specific operation mode of the microfluidic actuator 100 is to provide a driving power source with different phase charges to the upper electrode pad. 13g and the lower electrode pad 14g drive and control the vibration region 12c of the vibration layer 1c to generate an up-and-down displacement. As shown in FIG. 1A and FIG. 6A, when a negative voltage is applied to the upper electrode pad 13g and a positive voltage is applied to the lower electrode pad 14g, the active region 11e of the piezoelectric actuator layer 1e drives the vibration region 12c of the vibration layer 1c. Displaced toward the first substrate 1a. Thereby, the external fluid is sucked into the microfluidic actuator 100 by the fluid inlet I, and the fluid entering the microfluidic actuator 100 is sequentially flowed through the flow channel inlet M31 and the inflow channel M33 of the flow channel layer M3. The inflow chamber C1 flows through the cavity through hole 11m of the resonance layer 1m to the inner resonance chamber C2. As shown in FIGS. 1A and 6B, the application of the voltage to the upper electrode pad 13g and the lower electrode pad 14g is stopped, so that the active region 11e of the piezoelectric actuator layer 1e causes the vibration region 12c of the vibration layer 1c to return to the unreacted state. The location of the actuation. At this time, the movable portion 12m of the resonance layer 1m is displaced by resonance, and is displaced toward the first substrate 1a and attached to the waterproof layer 1h, so that the cavity through hole 11m of the resonance layer 1m is not connected to the resonance chamber C2. . Thereby, the fluid in the resonance chamber C2 is squeezed and merges into the reservoir chamber C3 of the cavity layer 1b through the fluid groove 11c of the vibration layer 1c. As shown in FIGS. 1A and 6C, the electrical properties of the upper electrode pad 13g and the lower electrode pad 14g are subsequently converted, and a positive voltage is applied to the upper electrode pad 13g and a negative voltage is applied to the lower electrode pad 14g. The vibration region 12c of 1c is displaced in a direction away from the first substrate 1a, and the movable portion 12m of the resonance layer 1m is returned to a position where resonance displacement is not generated, so that the volume in the resonance chamber C2 is compressed by the vibration layer 1c, resulting in collection in the reservoir. The fluid in the flow chamber C3 is injected into the first outflow hole 15a and the second outflow hole 16a. As shown in FIG. 1A and FIG. 6D, the application of the voltage to the upper electrode pad 13g and the lower electrode pad 14g is stopped, so that the active region 11e of the piezoelectric actuator layer 1e drives the vibration region 12c of the vibration layer 1c to return to the unexcited portion. The position to be actuated. At this time, the movable portion 12m of the resonance layer 1m is displaced by resonance, is displaced in a direction away from the first substrate 1a, and is attached to the inlet layer 1k, so that the cavity through hole 11m of the resonance layer 1m is not connected to the inflow chamber C1. . Thereby, the fluid in the reservoir chamber C3 is pressed and then passed through the first outflow hole 15a and the second outflow hole 16a, and then the array orifice sheet 1o is pushed. As shown in FIGS. 1A and 6E, when the movable portion 12m of the resonance layer 1m stops resonating and returns to a position where no resonance displacement occurs, the fluid passes through the orifice hole 11o of the array orifice sheet 1o and is discharged to the microfluid actuation. Outside the device 100 to complete the transfer of fluid.

Referring to Figure 7A, the second embodiment of the present invention is substantially identical to the first embodiment except that the microfluidic actuator 100' includes two actuation units 10 for increased flow output.

Referring to FIG. 7B, in other embodiments of the present disclosure, the microfluidic actuator 100" includes a plurality of actuation units 10. The plurality of actuation units 10 can be arranged in series, parallel, or series-parallel to increase flow output. The arrangement of the plurality of actuation units 10 can be designed according to the needs of use, and is not limited thereto.

Referring to FIG. 8, the third embodiment of the present invention is substantially the same as the first embodiment, except that the positioning post P'" of the microfluidic actuator 100'" and the positioning hole 12o' of the array aperture piece 1o'" Symmetrically disposed at opposite corners of the first substrate 1a"", and each of the first outflow holes 15a'" and each of the second outflow holes 16a'" has a circular cross section. In addition, the array aperture piece 1o'" has a bracket portion 13o'" for increasing the amount of extension of the array aperture piece 1o'" to achieve a spring effect. In the third embodiment of the present invention, the array aperture piece 1o'" is available. To filter impurities in the fluid, increase the reliability and service life of the components in the microfluidic actuator 100'".

Referring to FIGS. 9A to 9C, the fourth embodiment of the present invention is substantially the same as the first embodiment except that the flip alignment process and the wafer bonding process are different. Since the difference in heat conduction between the first substrate 1a and the second substrate 1i is large, and the wafer bonding process is susceptible to problems such as thermal stress and voids, the first substrate 1a, the cavity layer 1b, and the vibration layer 1c are formed first. The first metal layer 1d, the piezoelectric actuation layer 1e, the isolation layer 1f, the second metal layer 1g, the waterproof layer 1h, the second photoresist layer M2, and the resonance layer 1m become a single semi-finished product, and then the inlet layer The rolling and developing process forming flow channel layer M3 is performed on 1k, and finally the inlet layer 1k and the flow channel layer M3 are turned over to perform optical double-sided alignment bonding with the single semi-finished product in a Flip Chip manner. Further, in order to reduce the possibility of brittle cracking of the first substrate 1a after the etching process, active treatment may be performed prior to the bonding surface, thereby reducing the pressure at the time of hot pressing. In the fourth embodiment of the present invention, the inlet layer 1k is made of an electroformed or stainless steel material to increase the rigidity of the inlet layer 1k, but is not limited thereto.

The present invention provides a microfluidic actuator, a microfluidic actuator mainly implemented by a microelectromechanical process, and a vibration region of the vibration layer by applying a driving power source of different phase charges to the upper electrode pad and the lower electrode pad. The up and down displacement is generated to achieve fluid transfer. In addition, by attaching a burst of holes on the outflow hole, as a one-way valve, to avoid the phenomenon of fluid recirculation, it is of great industrial value, and apply according to law.

This case has been modified by people who are familiar with the technology, but it is not intended to be protected by the scope of the patent application.

100, 100', 100", 100'" ‧‧‧ microfluidic actuators

10‧‧‧Activity unit

1a, 1a'"‧‧‧ first substrate

11a‧‧‧ first surface

12a‧‧‧second surface

13a‧‧‧Export trench

14a‧‧‧Auxiliary trench

15a, 15a'"‧‧‧ first outflow hole

16a, 16a'"‧‧‧Second outflow hole

1b‧‧‧ cavity layer

1c‧‧‧vibration layer

11c‧‧‧ fluid trench

12c‧‧‧Vibration zone

1d‧‧‧first metal layer

11d‧‧‧lower electrode area

12d‧‧‧Block area

13d‧‧‧ gap

1e‧‧‧ Piezoelectric actuation layer

11e‧‧‧Action Area

1f‧‧‧Isolation

11f‧‧‧ clearance

1g‧‧‧second metal layer

11g‧‧‧pad isolation area

12g‧‧‧Upper electrode area

13g‧‧‧Upper electrode pad

14g‧‧‧lower electrode pad

1h‧‧‧Waterproof layer

1i‧‧‧second substrate

1j‧‧‧ film layer

1k‧‧‧ entrance layer

1m‧‧‧Resonant layer

11m‧‧‧ cavity through hole

12m‧‧‧movable department

13m‧‧‧ fixed department

1n‧‧‧cover layer

11n‧‧‧ Cover opening

12n‧‧‧ Cover hole

13n‧‧‧First curtain through hole

14n‧‧‧Second curtain through hole

1o, 1o'"‧‧‧ array aperture

11o‧‧‧ hole hole

12o, 12o'"‧‧‧ positioning holes

13o'"‧‧‧ bracket

AM1‧‧‧first joint alignment mark

AM2‧‧‧Second joint alignment mark

AW‧‧‧ joint registration mark window

C1‧‧‧ inflow chamber

C2‧‧‧Resonance chamber

C3‧‧‧ storage chamber

I‧‧‧ fluid inlet

M1‧‧‧First photoresist layer

M1a‧‧‧First photoresist zone

M2‧‧‧second photoresist layer

M2a‧‧‧second photoresist hole

M2b‧‧‧second photoresist opening

M3‧‧‧ flow layer

M31‧‧‧ runner entrance

M32‧‧‧ cavity opening

M33‧‧‧ Inflow channel

M4‧‧‧ third photoresist layer

M41‧‧‧ third photoresist opening

P, P'"‧‧‧ positioning column

Fig. 1A is a front cross-sectional view showing the first embodiment of the microfluidic actuator of the present invention. Figure 1B is a side cross-sectional view showing the first embodiment of the present invention. 2A to 2AH are schematic exploded views of the manufacturing steps of the first embodiment of the present invention. Figure 3 is a top plan view of the first embodiment of the present invention. Figure 4 is a top plan view of the inlet layer of the first embodiment of the present invention. Figure 5 is a top plan view of the flow hole of the first embodiment of the present invention. 6A to 6E are schematic views showing the operation of the first embodiment of the present invention. Fig. 7A is a schematic cross-sectional view showing a second embodiment of the microfluidic actuator of the present invention. Figure 7B is a bottom view of another embodiment of the present invention. Figure 8 is a bottom plan view of the array aperture sheet of the third embodiment of the present invention. 9A to 9C are schematic views of the flip alignment process and the wafer bonding process of the fourth embodiment of the present invention.

Claims (23)

A microfluidic actuator comprising: a substrate having a first surface and a second surface, wherein an exit trench, a plurality of first outflow holes, and a plurality of second outflow holes are formed through an etching process, the outlet The groove is connected to the plurality of first outflow holes and the plurality of second outflow holes, and the plurality of second outflow holes are disposed outside the plurality of first outflow holes; a cavity layer is transparently deposited Forming a process on the first surface of the substrate, and forming a reservoir chamber through the etching process, the reservoir chamber being in communication with the plurality of first outflow holes and the plurality of second outflow holes; The vibration layer is formed on the cavity layer through a deposition process, and forms a plurality of fluid trenches and a vibration region through an etching process, and the plurality of fluid grooves are symmetrically formed on opposite sides of the vibration layer, thereby defining the vibration a first metal layer is formed on the vibration layer through a deposition process, and a lower electrode region, a plurality of barrier regions, and a plurality of gaps are formed through an etching process, and the lower electrode region is formed in the corresponding region a position of the vibration zone, the plurality of gaps being formed between the lower electrode region and the plurality of barrier regions, wherein the plurality of barrier regions are formed at positions outside the plurality of fluid grooves; a piezoelectric actuation layer Forming on the first metal layer through a deposition process, and forming an active region at a position corresponding to the lower electrode region of the first metal layer through an etching process; an isolation layer formed on the piezoelectric actuator through a deposition process And forming a plurality of spacers in the plurality of gaps through the etching process; a second metal layer is formed on the piezoelectric actuation layer, the first metal layer, and the Forming an upper electrode pad and a lower electrode pad on the first metal layer through an etching process; a waterproof layer formed on the first metal layer and the second metal layer through a coating process And the isolation layer, and the upper electrode pad and the lower electrode pad are exposed through an etching process; a photoresist layer is formed on the first metal layer, the second metal layer and the waterproof layer through a developing process; An inlet layer forms a plurality of fluid inlets through an etching process or a laser process; a first-order channel layer is formed on the inlet layer, and an inflow chamber, a plurality of inflow channels, and a plurality of channel inlets are formed through a lithography process. The plurality of flow channel inlets are respectively connected to the plurality of fluid inlets of the inlet layer, the plurality of inlet channels and the plurality of channel inlets are disposed around the inlet chamber, and the plurality of inlet channels are connected to the plurality a flow path inlet and the inflow chamber; a resonant layer formed on the flow path layer by a rolling process, forming a cavity through hole through an etching process, and through the inversion alignment process and the wafer bonding process bonding On the photoresist layer; and an array of aperture sheets formed on the substrate by an adhesive process, the array aperture sheet has a plurality of aperture holes, the plurality of aperture holes and the The plurality of first outflow holes and the plurality of second outflow holes are offset from each other, thereby closing the plurality of first outflow holes and the plurality of second outflow holes of the substrate; wherein different phases are provided Driving a power source to the upper electrode pad and the lower electrode pad to drive and control the vibration region of the vibration layer to generate an up-and-down displacement, allowing fluid to be drawn from the plurality of fluid inlets, through the plurality of inflow channels to The inflow chamber flows through the cavity through hole to a resonant chamber, flows through the plurality of fluid grooves to the storage chamber, and is finally squeezed through the plurality of first outflow holes and the plurality The second outflow holes are pushed out of the array of orifices and discharged from the plurality of orifices to complete fluid transfer. The microfluidic actuator of claim 1, wherein the upper electrode pad and The lower electrode pads are respectively formed on opposite sides of the piezoelectric actuation layer. The microfluidic actuator of claim 1, wherein each of the second outflow holes has a larger diameter than each of the first outflow holes. The microfluidic actuator of claim 1, wherein the substrate forms a plurality of auxiliary trenches through an etching process, symmetrically formed on opposite sides of the exit trench. The microfluidic actuator of claim 4, wherein each of the auxiliary grooves and the outlet groove form a positioning post for positioning the array of aperture sheets. The microfluidic actuator of claim 1, wherein the substrate is a tantalum substrate. The microfluidic actuator of claim 1, wherein the cavity layer is a cerium oxide material. The microfluidic actuator of claim 1, wherein the vibrating layer is a tantalum nitride material. The microfluidic actuator of claim 1, wherein the first metal layer is a titanium nitride metal material. The microfluidic actuator of claim 1, wherein the first metal layer is a tantalum metal material. The microfluidic actuator of claim 1, wherein the barrier layer is a ceria material. The microfluidic actuator of claim 1, wherein the second metal layer is a gold metal material. The microfluidic actuator of claim 1, wherein the second metal layer is an aluminum metal material. The microfluidic actuator of claim 1, wherein the substrate forms the plurality of first outflow holes and the plurality of second outflow holes through a deep reactive ion etching process. The microfluidic actuator of claim 1, wherein the cavity layer forms the reservoir chamber through a wet etching process. The microfluidic actuator of claim 1, wherein the photoresist layer is a thick film photoresist. The microfluidic actuator of claim 1, wherein the resonant layer forms the cavity through hole through a dry etching process. The microfluidic actuator of claim 1, wherein the resonant layer forms the cavity through hole through a laser etching process. The microfluidic actuator of claim 1, wherein a positive voltage is applied to the upper electrode pad and a negative voltage is applied to the lower electrode pad such that an active region of the piezoelectric actuation layer drives the vibration layer The vibrating zone is displaced in a direction away from the substrate. The microfluidic actuator of claim 1, wherein a negative voltage is applied to the upper electrode pad and a positive voltage is applied to the lower electrode pad such that an active region of the piezoelectric actuation layer drives the vibration layer The vibrating zone is displaced toward the substrate. The microfluidic actuator of claim 1, wherein: applying a negative voltage to the upper electrode pad and a positive voltage to the lower electrode pad, such that the actuation region of the piezoelectric actuation layer drives the vibration The vibration zone of the layer is displaced toward the substrate, whereby external fluid is drawn into the microfluidic actuator from the plurality of fluid inlets, and fluid entering the microfluidic actuator passes sequentially The plurality of inflow channels flow to the inflow chamber, flow through the cavity through holes to the resonant chamber, and finally collect through the plurality of fluid grooves in the storage chamber; and convert the upper electrode pads and The electrical property of the lower electrode pad applies a positive voltage to the upper electrode pad and a negative voltage to the lower electrode pad, such that the vibration region of the vibration layer is displaced away from the substrate, so that the current is collected. The fluid in the chamber is sequentially passed through the plurality of first outflow holes and the plurality of second outflow holes A plurality of orifice holes are discharged from the microfluidic actuator to complete the transfer of the fluid. A microfluidic actuator comprising a plurality of actuating units, each actuating unit comprising: a substrate having a first surface and a second surface, forming an exit trench through the etching process, and the plurality of first outflows a hole and a plurality of second outflow holes, the outlet groove is connected to the plurality of first outflow holes and the plurality of second outflow holes, and the plurality of second outflow holes are disposed in the plurality of first holes An outer side of the outflow hole; a cavity layer formed on the first surface of the substrate through a deposition process, and forming a reservoir chamber through an etching process, the storage chamber and the plurality of first outflow holes and The plurality of second outflow holes are connected to each other; a vibration layer is formed on the cavity layer through a deposition process, and a plurality of fluid grooves and a vibration region are formed through an etching process, and the plurality of fluid grooves are symmetrically formed on the cavity layer The opposite sides of the vibration layer are used to define the vibration region; a first metal layer is formed on the vibration layer through a deposition process, and a lower electrode region and a plurality of barrier regions are formed through an etching process a plurality of gaps, the lower electrode region is formed at a position corresponding to the vibration region, the plurality of gaps are formed between the lower electrode region and the plurality of barrier regions, and the plurality of barrier regions are formed corresponding to the plurality of fluids a position on the outer side of the trench; a piezoelectrically actuated layer formed on the first metal layer through a deposition process, and an active region formed by the etching process at a position corresponding to the lower electrode region of the first metal layer; a layer is formed on the piezoelectric actuation layer and the first metal layer through a deposition process, and a plurality of spacers are formed in the plurality of gaps through an etching process; a second metal layer is formed on the pressure through a deposition process Forming an upper electrode pad and a lower electrode pad on the first metal layer through an etching process; and forming a waterproof layer through the coating process a metal layer, the second metal layer And the isolation layer, and the upper electrode pad and the lower electrode pad are exposed through an etching process; a photoresist layer is formed on the first metal layer, the second metal layer and the waterproof layer through a developing process; An inlet layer forms a plurality of fluid inlets through an etching process or a laser process; a first-order channel layer is formed on the inlet layer, and an inflow chamber, a plurality of inflow channels, and a plurality of channel inlets are formed through a lithography process. The plurality of flow channel inlets are respectively connected to the plurality of fluid inlets of the inlet layer, the plurality of inlet channels and the plurality of channel inlets are disposed around the inlet chamber, and the plurality of inlet channels are connected to the plurality a flow path inlet and the inflow chamber; a resonant layer formed on the flow path layer by a rolling process, forming a cavity through hole through an etching process, and through the inversion alignment process and the wafer bonding process bonding On the photoresist layer; and an array of aperture sheets formed on the substrate by an adhesive process, the array aperture sheet has a plurality of aperture holes, the plurality of aperture holes and the The plurality of first outflow holes and the plurality of second outflow holes are offset from each other, thereby closing the plurality of first outflow holes and the plurality of second outflow holes of the substrate; wherein different phases are provided Driving a power source to the upper electrode pad and the lower electrode pad to drive and control the vibration region of the vibration layer to generate an up-and-down displacement, allowing fluid to be drawn from the plurality of fluid inlets, through the plurality of inflow channels to The inflow chamber flows through the cavity through hole to a resonant chamber, flows through the plurality of fluid grooves to the storage chamber, and is finally squeezed through the plurality of first outflow holes and the plurality a second outflow hole and pushing the array aperture sheet out of the plurality of aperture holes to complete fluid transmission; and wherein the plurality of actuation units are connected in series, parallel or series-parallel connection, In order to increase the transmission flow of the fluid. A microfluidic actuator comprising: a substrate having a first surface and a second surface, wherein at least one exit trench, a plurality of first outflow holes, and a plurality of second outflow holes are formed through an etching process, At least the outlet trench is in communication with the plurality of first outflow holes and the plurality of second outflow holes; a cavity layer is formed on the first surface of the substrate through a deposition process, and at least one is formed through an etching process a storage chamber, the at least one storage chamber is in communication with the plurality of first outflow holes and the plurality of second outflow holes; a vibration layer is formed on the cavity layer through a deposition process, and is etched through the etching process Forming a plurality of fluid grooves and at least one vibration region, the plurality of fluid grooves are symmetrically formed on opposite sides of the vibration layer to define the at least one vibration region; a first metal layer is formed by the deposition process Forming at least a lower electrode region, a plurality of barrier regions, and a plurality of gaps on the vibration layer, wherein the at least one lower electrode region is formed at a position corresponding to at least one vibration region The plurality of gaps are formed between the at least one lower electrode region and the plurality of barrier regions; a piezoelectric actuation layer is formed on the first metal layer through a deposition process, and is etched through the etching process to correspond to the first The at least one lower electrode region of the metal layer forms at least one active region; an isolation layer is formed on the piezoelectric actuation layer and the first metal layer through a deposition process, and is formed in the plurality of gaps through an etching process a plurality of spacers; a second metal layer formed on the piezoelectric actuation layer, the first metal layer and the isolation layer through a deposition process, and forming at least one upper electrode on the first metal layer through an etching process a solder pad and at least a lower electrode pad; a waterproof layer formed on the first metal layer and the second metal layer through a coating process And the isolation layer, and exposing the at least one upper electrode pad and the at least one lower electrode pad through an etching process; a photoresist layer formed on the first metal layer, the second metal layer, and the waterproof through a developing process An inlet layer, forming a plurality of fluid inlets through an etching process or a laser process; a first-order channel layer is formed on the inlet layer, and at least one inflow chamber, a plurality of inflow channels, and a plurality of layers are formed through a lithography process a plurality of flow path inlets respectively communicating with the plurality of fluid inlets of the inlet layer, the plurality of inlet channels and the plurality of flow channel inlets being disposed around the at least one inflow chamber, the plurality of The inflow channel is connected between the plurality of channel inlets and the at least one inflow chamber; a resonant layer is formed on the channel layer by a rolling process, and at least one cavity through hole is formed through the etching process, and is turned through a alignment process and a wafer bonding process are bonded to the photoresist layer; and an array of aperture sheets formed on the substrate by an adhesive process, the array aperture sheet having a plurality of a plurality of aperture holes, the plurality of first flow holes and the plurality of second flow holes are offset from each other, thereby closing the plurality of first outflow holes of the substrate and the plurality of holes a second outflow hole; wherein a driving power source having different phase charges is provided to the at least one upper electrode pad and the at least one lower electrode pad to drive and control the at least one vibration region of the vibration layer to generate an up and down displacement, so that Pumping fluid from the plurality of fluid inlets, flowing through the plurality of inflow channels to the at least one inflow chamber, and then flowing through the at least one cavity through hole to the at least one resonant chamber, through which the plurality of fluid grooves flow to The at least one storage chamber is finally squeezed through the plurality of first outflow holes and the plurality of second outflow holes and pushed away from the array of aperture sheets to be discharged from the plurality of aperture holes to complete fluid transmission .