CN111254390B

CN111254390B - Method for manufacturing micro-fluid actuator

Info

Publication number: CN111254390B
Application number: CN201811452097.4A
Authority: CN
Inventors: 莫皓然; 余荣侯; 张正明; 戴贤忠; 廖文雄; 黄启峰; 韩永隆; 蔡长谚
Original assignee: Microjet Technology Co Ltd
Current assignee: Microjet Technology Co Ltd
Priority date: 2018-11-30
Filing date: 2018-11-30
Publication date: 2022-03-22
Anticipated expiration: 2038-11-30
Also published as: CN111254390A

Abstract

A method of manufacturing a microfluidic actuator, comprising the steps of: step 1, providing a substrate, and depositing a cavity layer on the substrate; step 2, depositing a vibration layer on the cavity layer; step 3, depositing an etching actuating layer on the vibration layer; step 4, etching a plurality of flow channels on the substrate; step 5, depositing a mask layer on the substrate, and etching a plurality of connecting runners; step 6, etching a flow storage cavity on the cavity layer; step 7, providing a pore plate layer, and etching a plurality of runner ports on the pore plate layer; step 8, rolling the dry film on the hole plate layer and photoetching to form a plurality of channels of a channel layer; and 9. flip chip alignment and thermocompression bonding the flow channel layer and the substrate to form the whole structure of the micro-fluid actuator.

Description

Method for manufacturing micro-fluid actuator

[ technical field ] A method for producing a semiconductor device

The present disclosure relates to a method for manufacturing a micro-fluid actuator, and more particularly, to a method for manufacturing a micro-fluid actuator using a micro-electromechanical semiconductor process.

[ background of the invention ]

In all fields, no matter in medicine, computer technology, printing, energy and other industries, the key technology of the technology is to develop fluid delivery structures contained in products such as micropumps, sprayers, ink jet heads, industrial printing devices and the like in the direction of refinement and miniaturization.

With the increasing development of technology, the applications of fluid transport structures are becoming more diversified, such as industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., and even recently, the image of a wearable device is seen in a hot-wearing device, which shows that the conventional fluid transport structures have gradually tended to be miniaturized and maximized in flow rate.

In the prior art, although an integrated miniaturized fluid delivery structure is manufactured by using a micro-electro-mechanical process, the existing miniaturized fluid delivery structure has a defect of too small displacement of a thin film piezoelectric layer, and the problem of insufficient compression ratio of actuating fluid is often existed in the existing miniaturized fluid delivery structure, so that the problem of too small transmission flow is an important content of development, how to break through the technical bottleneck of the miniaturized structure by means of innovation.

[ summary of the invention ]

The present invention is directed to a method for manufacturing a micro-fluid actuator, which is manufactured by a standardized micro-electromechanical semiconductor process, and the micro-fluid actuator is manufactured by using a semiconductor thin film for transferring a fluid. Therefore, controlling the depth of the membrane cavity to a very shallow range can still increase the fluid compression ratio during actuation of the microfluidic actuator.

One broad aspect of the present disclosure is a method of fabricating a microfluidic actuator, comprising: step 1, providing a substrate to deposit a cavity layer, wherein the substrate is provided with a first surface and a second surface, and depositing an oxidation material on the first surface of the substrate to form the cavity layer; step 2, depositing a vibration layer on the cavity layer, and depositing a nitride material on the cavity layer to form the vibration layer; step 3, depositing and etching an actuating layer on the vibrating layer, depositing a first metal material on the vibrating layer to form a lower electrode layer, depositing a piezoelectric material on the lower electrode layer to form a piezoelectric actuating layer, depositing a second metal material on the piezoelectric actuating layer to form an upper electrode layer, and finally defining the actuating layer by etching; step 4, etching a plurality of flow channels on the substrate, defining an outlet flow channel and two inlet flow channels of the substrate through etching, wherein the inlet flow channels are respectively and symmetrically arranged on two sides of the outlet flow channel; step 5, a mask layer is deposited on the substrate, a plurality of connecting runners are etched, firstly, oxidation materials are deposited on the second surface of the substrate and in the outlet runner and the inlet runner to form the mask layer, then, the substrate is exposed through the through holes, the substrate is subjected to low-temperature deep etching to define an outflow connecting runner, a plurality of first inflow connecting runners and two second inflow connecting runners, the plurality of first inflow connecting runners are symmetrically arranged on two sides of the outflow connecting runner, and the second inflow connecting runners are respectively symmetrically arranged on two sides of the outflow connecting runner and are arranged at one end of the plurality of first inflow connecting runners; 6. etching a flow storage cavity in the cavity layer, defining the flow storage cavity in the cavity layer through etching, and communicating the flow storage cavity with the outflow connecting flow channel, the first inflow connecting flow channels and the second inflow connecting flow channels; 7. providing an orifice plate layer to etch a plurality of flow channel openings, wherein the orifice plate layer defines an outlet flow channel opening and two inlet flow channel openings through etching, and the inlet flow channel openings are respectively and symmetrically arranged at two sides of the outlet flow channel opening; 8. rolling a dry film on the hole plate layer and photoetching to form a plurality of channels of a flow passage layer, wherein the hole plate layer is rolled on the hole plate layer through a dry film material to form the flow passage layer, and then defining an outflow passage communicated with the outflow passage opening, two inflow passages respectively communicated with the inflow passage opening and a plurality of columnar structures in the flow passage layer through a photoetching process, wherein the columnar structures are symmetrically arranged at two sides of the outflow passage, and the inflow passages are respectively symmetrically arranged at two sides of the outflow passage; and 9. a flow passage layer is formed by flip chip alignment and hot press bonding, the flow passage layer is arranged on the second surface of the substrate through flip chip alignment and hot press bonding, so that the outlet flow passages of the orifice plate layer are communicated with the outlet flow passages of the substrate, the inlet flow passages of the flow passage layer are respectively corresponding to the inlet flow passages of the substrate, and the inlet flow passages of the orifice plate layer are respectively communicated with the inlet flow passages of the substrate, thereby forming the integral structure of the micro-fluid actuator.

[ description of the drawings ]

Fig. 1 is a schematic cross-sectional view of a first embodiment of the microfluidic actuator of the present disclosure.

Fig. 2 is a schematic flow chart of a manufacturing method of a first embodiment of the present microfluidic actuator.

Fig. 3A to 3K are exploded views illustrating the manufacturing steps of the first embodiment of the micro-fluid actuator of the present invention.

Fig. 4 is a schematic top view of a first embodiment of the present microfluidic actuator.

Fig. 5 is a schematic bottom view of a first embodiment of the microfluidic actuator of the present disclosure.

Fig. 6A to 6C are exploded views illustrating the etching steps of the inlet connecting channel of the first embodiment of the present micro fluid actuator.

Fig. 7A to 7B are schematic operation diagrams of the micro-fluid actuator according to the first embodiment of the present disclosure.

Fig. 8 is a schematic cross-sectional view of a second embodiment of the present microfluidic actuator.

Fig. 9 is a schematic bottom view of other embodiments of the disclosure.

[ detailed description ] embodiments

Exemplary embodiments that embody features and advantages of this disclosure are described in detail below in the detailed description. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.

Referring to fig. 1, in a first embodiment of the present invention, a micro-fluid actuator 100 is used for delivering fluid, and includes: a substrate 1a, a cavity layer 1b, a vibration layer 1c, a bottom electrode layer 1d, a piezoelectric layer 1e, an upper electrode layer 1f, a hole plate layer 1h and a channel layer 1i are fabricated by the following steps.

Referring to fig. 2 and 3A, in step S1, a cavity layer is deposited on the first surface 11a of the substrate 1a by an oxide material to form a cavity layer 1 b. In the first embodiment, the deposition process may be a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, or a combination thereof, but not limited thereto. In the first embodiment of the present disclosure, the substrate 1a is a silicon substrate, and the oxide material is a silicon dioxide material, but not limited thereto.

Referring to fig. 2 and fig. 3A, in step S2, a vibration layer is deposited on the cavity layer, and a nitride material is deposited on the cavity layer 1b to form a vibration layer 1 c. In the first embodiment of the present disclosure, the nitride material is a silicon nitride material, but not limited thereto.

Referring to fig. 2, 3A and 3B, in step S3, the vibration layer is deposited and etched to form an actuation layer, a first metal material is deposited on the vibration layer 1c to form a lower electrode layer 1d, a piezoelectric material is deposited on the lower electrode layer 1d to form a piezoelectric actuation layer 1e, a second metal material is deposited on the piezoelectric actuation layer 1e to form an upper electrode layer 1f, and the lower electrode layer 1d, the piezoelectric actuation layer 1e and the upper electrode layer 1f are etched to define an actuation layer M with a desired size. In the first embodiment of the present disclosure, the first metal material is a platinum metal material or a titanium metal material, but not limited thereto. In the first embodiment of the present disclosure, the second metal material is a gold metal material or an aluminum metal material, but not limited thereto. It should be noted that, in the first embodiment of the present invention, the etching process may be a wet etching process, a dry etching process or a combination of the two, but not limited thereto.

Referring to fig. 2 and 3C, in step S4, the substrate is etched to form an outlet channel 13a and two inlet channels 14a on the second surface 12a of the substrate 1a by a dry etching process, and the outlet channel 13a and the two inlet channels 14a have the same etching depth, and the etching depth is etched between the first surface 11a and the second surface 12a without penetrating the first surface 11 a. The two inlet channels 14a are symmetrically disposed at both sides of the outlet channel 13a, respectively.

Referring to fig. 2 and fig. 3D to 3F, in step S5, a mask layer is deposited on the substrate to etch a plurality of connecting runners, and a mask layer 1g is formed by depositing an oxide material on the second surface 12a of the substrate 1a and in the outlet runner 13a and the inlet runner 14a, and then a fine via process is performed to form a first via hole 11g in the outlet runner 13a and a plurality of second via holes 12g and a third via hole 13g in the inlet runner 14a, respectively. In the first embodiment of the present disclosure, the aperture of the first through hole 11g is larger than the aperture of the third through hole 13g, and the aperture of each third through hole 13g is larger than the aperture of each second through hole 12g, but not limited thereto. The first through-hole 11g, the plurality of second through-holes 12g, and the two third through-holes 13g are perforated to such a depth as to be in contact with the substrate 1a that the substrate 1a is exposed. In the first embodiment, the precise via process is an excimer laser processing process, but not limited thereto. It should be noted that, since the first through hole 11g, the plurality of second through holes 12g and the third through hole 13g have a certain depth, the focusing is not easy if the first through hole, the plurality of second through holes and the third through hole are formed by the photolithography process, and the excimer laser processing process does not have the problem.

Referring to fig. 2, 3F and 4, as mentioned above, in the first embodiment of the present invention, after the first through hole 11g, the second through holes 12g and the third through hole 13g are formed, the portions of the substrate 1a corresponding to the first through hole 11g, the second through holes 12g and the third through hole 13g are etched by a low temperature deep etching process, so as to form an outflow connecting channel 15a, a first inflow connecting channel 16a and two second inflow connecting channels 17a of the substrate 1 a. The outflow connection channel 15a is formed by etching along the first through-hole 11g until it comes into contact with the cavity layer 1b, the first inflow connection channels 16a are formed by etching along the second through-holes 12g until they come into contact with the cavity layer 1b, and the second inflow connection channels 17a are formed by etching along the third through-holes 13g until they come into contact with the cavity layer 1 b. A plurality of first inflow connection channels 16a are symmetrically disposed at both sides of the outflow connection channel 15a, and two second inflow connection channels 17a are symmetrically disposed at both sides of the outflow connection channel 15a, respectively, and adjacently disposed at one ends of the plurality of first inflow connection channels 16 a. In the first embodiment, the low temperature deep etching Process is a deep reactive ion etching (BOSCH Process), but not limited thereto.

Referring to fig. 2, 3E and 6A, in the first embodiment of the present invention, when the mask layer 1g forms the first through hole 11g, the second through holes 12g and the third through hole 13g by using an excimer laser processing process, a buffer distance E is specially reserved on the sidewalls of the outlet channel 13a and the inlet channel 14a to avoid the deviation of the perforation position or the perforation angle. In addition, since the silicon material of the substrate 1a is only etched by the deep reactive ion etching Process (BOSCH Process), an over-etching depth t is left on the substrate 1a by the excimer laser processing Process, which is beneficial for the substrate 1a to be able to reliably and easily etch from the over-etching depth t to form the outlet connection flow channel 15a, the plurality of first inlet connection flow channels 16a and the second inlet connection flow channel 17 a. In the first embodiment, the minimum aperture of the outflow connecting channel 15a, the plurality of first inflow connecting channels 16a and the second inflow connecting channel 17a is 5 to 50 micrometers (μm), and the aperture size depends on the fluid property. Referring to fig. 3F and fig. 6B, the outflow connecting channel 15a, each of the first inflow connecting channels 16a and each of the second inflow connecting channels 17a have a depth d of a through hole and a hole diameter s, and the aspect ratio d/s of the formed connecting channels can reach 40.

Referring to fig. 2 and 3G, in step S6, the cavity layer is etched to form a fluid storage cavity, and the cavity layer 1b is etched to form a fluid storage cavity 11b inside the cavity layer 1b by a wet etching process. That is, the etching solution flows in from the first through hole 11g, the second through holes 12g, and the third through hole 13g, flows to the cavity layer 1b through the outflow connecting channel 15a, the first inflow connecting channels 16a, and the second inflow connecting channel 17a, and etches and releases the portion where the cavity layer 1b is removed, thereby defining the flow storage chamber 11 b. Thereby, the reservoir chamber 11b communicates with the outlet connection flow path 15a, the plurality of first inlet connection flow paths 16a, and the second inlet connection flow path 17 a. In the first embodiment, the wet etching process utilizes a hydrofluoric acid (HF) etching solution to etch the cavity layer 1b, but not limited thereto. In the first embodiment, the thickness of the cavity layer 1b is 1 to 5 μm, but not limited thereto. It should be noted that the mask layer 1g is also removed when the flow storage chamber 11b is formed by the wet time process. After the formation of the flow storage chamber 11b and the removal of the mask layer 1g are completed, the outlet channel 13a of the substrate 1a communicates with the outlet connecting channel 15a, and the inlet channel 14a communicates with the plurality of first inlet connecting channels 16a and the plurality of second inlet connecting channels 17a, respectively.

Referring to fig. 3G and fig. 6C, in the first embodiment, the wet etching process is generally isotropic etching, and in the first embodiment, when the liquid storage chamber 11b is etched, the liquid storage chamber 11b has a cavity depth r, which is equal to the thickness of the cavity layer 1b, and the lateral erosion distance generated by the wet etching is r ', so that the cavity depth r and the lateral erosion distance r' are equal, which is isotropic etching. Since the apertures of the outflow connecting channel 15a, each first inflow connecting channel 16a and each second inflow connecting channel 17a are only between 5-50 micrometers (μm), and the cavity depth r is only between 1-5 micrometers (μm), an over-etching process is required during etching the liquid storage chamber 11b to prolong the etching time for removing the unetched residues. In the first embodiment, when the liquid storage chamber 11b is formed by performing the wet etching process, an over-etching distance L is generated, and the over-etching distance L is greater than the under-etching distance r', so that the silicon dioxide material within the liquid storage chamber 11b can be completely removed.

Referring to fig. 2, fig. 3H and fig. 3I, in step S7, a plurality of flow ports are etched on an aperture plate layer, and an outlet port 11H and two inlet ports 12H are etched on the aperture plate layer 1H by an etching process. The two inlet ports 12h are respectively symmetrically arranged at two sides of the outlet port 11 h. In the first embodiment, the etching process of the aperture plate layer 1h may be a wet etching process, a dry etching process or a combination thereof, but not limited thereto. In the first embodiment of the present disclosure, the aperture plate layer 1h is made of a stainless material or a glass material, but not limited thereto.

Referring to fig. 2, 3J, 3K and 5, in step S8, the dry film is rolled on the aperture plate layer and the channels of a channel layer are formed by photolithography, wherein a dry film material is rolled on the aperture plate layer 1h to form a channel layer 1i, and then an outflow channel 11i, two inflow channels 12i and a plurality of columnar structures 13i are formed on the channel layer 1i by photolithography, and the outflow channel 11i is connected to the outflow channel 11h of the aperture plate layer 1h, and the inflow channel 12i is connected to the inflow channel 12h of the aperture plate layer 1 h. The plurality of columnar structures 13i are symmetrically arranged on both sides of the outflow channel 11i, and the inflow channel 12i is symmetrically arranged on both sides of the outflow channel 11i, respectively. In this embodiment, a plurality of pillar structures 13i are formed in the inflow channel 12i in a staggered manner (see fig. 5) for filtering impurities in the fluid. In the first embodiment of the present disclosure, the dry film material is a photosensitive polymer dry film, but not limited thereto.

Referring back to fig. 1 and 2, in step S9, the channel layer 1i is bonded to the second surface 12a of the substrate 1a by a flip chip alignment process and a thermal compression process to form an actuating unit 10 of the micro-fluidic actuator 100 of the present embodiment. Therefore, the outlet channel opening 11h of the orifice plate layer 1h is communicated with the outlet channel 13a of the substrate 1a through the outlet channel 11i of the channel layer 1 i; and the inlet channel port 12h of the aperture plate layer 1h is respectively communicated with the inlet channel 14a of the substrate 1a through the inlet channel 12i of the channel layer 1 i.

It should be noted that, since the aperture of each third flow through hole 13g is larger than the aperture of each second flow through hole 12g, the plurality of first inflow connecting runners 16a are respectively disposed corresponding to the positions of the plurality of second flow through holes 12g, and the second inflow connecting runners 17a are respectively disposed corresponding to the positions of the third flow through holes 13g, the aperture of each second inflow connecting runner 17a is larger than the aperture of each first inflow connecting runner 16 a. Further, the second inflow connection channel 17a is provided at an edge portion with respect to the reservoir chamber 11b, so that the provision of the second inflow connection channel 17a facilitates a wet etching process of the reservoir chamber 11 b.

Referring to fig. 7A and 7B, in the first embodiment of the present invention, the micro-fluid actuator 100 specifically operates by providing a driving power source with opposite phase charges to the upper electrode layer 1f and the lower electrode layer 1d to drive and control the vibration layer 1c to move up and down. As shown in fig. 7A, when a positive voltage is applied to the upper electrode layer 1f and a negative voltage is applied to the lower electrode layer 1d, the piezoelectric actuation layer 1e drives the vibration layer 1c to displace in a direction away from the substrate 1a, thereby external fluid is sucked into the micro-fluidic actuator 100 from the inlet channel 12h of the aperture plate layer 1h, and the fluid entering the micro-fluidic actuator 100 then sequentially passes through the inlet channel 12i of the channel layer 1i, the inlet channel 14a of the substrate 1a, and the first inlet connecting channel 16a and the second inlet connecting channel 17A of the substrate 1a, and finally converges in the flow storage chamber 11b of the cavity layer 1 b. As shown in fig. 7B, the electrical properties of the upper electrode layer 1f and the lower electrode layer 1d are then switched, and a negative voltage is applied to the upper electrode layer 1f and a positive voltage is applied to the lower electrode layer 1d, so that the vibration layer 1c moves toward the substrate 1a, the volume of the fluid storage chamber 11B is compressed by the vibration layer 1c, and the fluid collected in the fluid storage chamber 11B is sequentially discharged from the outlet 11h of the orifice layer 1h to the outside of the micro fluid actuator 100 after passing through the outlet connecting channel 15a of the substrate 1a, the outlet channel 13a of the substrate 1a and the outlet channel 11i of the channel layer 1i, thereby completing the fluid transmission.

It is to be noted that when the microfluidic actuator 100 sucks in external fluid, part of the external fluid may be sucked into the microfluidic actuator 100 from the outlet port 11h of the orifice plate layer 1h, but since the aperture of the outlet port 11h of the orifice plate layer 1h is smaller than that of the inlet port 12h, the external fluid is sucked in from the outlet port 11h by a relatively small amount. When the micro fluid actuator 100 discharges the fluid, the plurality of columnar structures 13i of the flow channel layer 1i generate a damping effect on the returned fluid, and in addition, the second inlet connection flow channel 17a of the substrate 1a corresponds to an edge position where the displacement amount of the piezoelectric actuation layer 1c is the smallest. The amount of fluid discharged from inlet port 12h is relatively small.

Furthermore, it should be noted that the problem of the flow resistance of the first inflow connection channels 16a of the substrate 1a can be improved by adjusting the voltage waveform or extending the operation time of the micro-fluid actuator 100 to suck the external fluid.

Referring to fig. 8, a second embodiment of the present invention is substantially the same as the first embodiment, except that the micro-fluid actuator 100' includes two actuating units 10 to increase the flow output.

Referring to fig. 9, in other embodiments of the present disclosure, a microfluidic actuator 100 "includes a plurality of actuating units 10. The plurality of actuating units 10 may be arranged in series, in parallel, or in series-parallel to increase the flow output, and the arrangement of the plurality of actuating units 10 may be designed according to the usage requirement, which is not limited thereto.

It should be noted that, in the second embodiment of the present invention, each of the actuating units 10 has a symmetrical structure, and in other embodiments of the present invention, the structural arrangement of each of the actuating units 10 can be designed according to the use requirement, which is not limited thereto.

The present invention provides a method for manufacturing a micro-fluid actuator, which is mainly completed by a micro-electro-mechanical semiconductor process, and a driving power supply with different phase charges is applied to an upper electrode layer and a lower electrode layer, so that a vibration layer generates up-and-down displacement, and further fluid transmission is achieved. Therefore, the micro fluid actuator can increase the fluid compression ratio to compensate for the defect of too small displacement of the piezoelectric layer during operation, thereby achieving the feasibility of fluid transmission and great transmission efficiency in a miniaturized structure, and having great industrial application value.

Various modifications may be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims.

[ notation ] to show

100. 100', 100 ": microfluidic actuator

10: actuating unit

1 a: substrate

11 a: first surface

12 a: second surface

13 a: outlet flow passage

14 a: inlet flow passage

15 a: outflow connection flow channel

16 a: first inflow connection channel

17 a: second inflow connection channel

1 b: cavity layer

11 b: flow storage chamber

1 c: vibration layer

1 d: lower electrode layer

1 e: piezoelectric actuation layer

1 f: upper electrode layer

1 g: mask layer

11 g: first flow through hole

12 g: second flow through hole

13 g: third flow through hole

1 h: orifice plate layer

11 h: outflow road junction

12 h: inflow road junction

1 i: flow channel layer

11 i: outflow channel

12 i: inflow channel

13 i: columnar structure

e: buffer distance

t: depth of over-etching

d: depth of perforation

s: diameter of the perforation

r: depth of cavity

r': lateral erosion distance

L: over-etch distance

M: actuating layer

S1-S9: method for manufacturing a microfluidic actuator

Claims

1. A method of manufacturing a microfluidic actuator, comprising the steps of:

step 1, providing a substrate to deposit a cavity layer, wherein the substrate is provided with a first surface and a second surface, and an oxidation material is deposited on the first surface of the substrate to form the cavity layer;

step 2, depositing a vibration layer on the cavity layer, and depositing a nitride material on the cavity layer to form the vibration layer;

step 3, depositing and etching an actuating layer on the vibrating layer, depositing a first metal material on the vibrating layer to form a lower electrode layer, depositing a piezoelectric material on the lower electrode layer to form a piezoelectric actuating layer, depositing a second metal material on the piezoelectric actuating layer to form an upper electrode layer, and finally defining the actuating layer by etching;

step 4, etching a plurality of flow channels on the substrate, defining an outlet flow channel and two inlet flow channels of the substrate through etching, wherein the two inlet flow channels are respectively and symmetrically arranged on two sides of the outlet flow channel;

step 5, the substrate is deposited with a mask layer to etch a plurality of connecting runners, the oxide material is deposited on the second surface of the substrate and in the outlet runner and the two inlet runners to form the mask layer, the substrate is exposed through the through hole, the substrate is etched deeply at a low temperature to define an outflow connecting runner, a plurality of first inflow connecting runners and two second inflow connecting runners, the plurality of first inflow connecting runners are symmetrically arranged on two sides of the outflow connecting runner, and the plurality of second inflow connecting runners are symmetrically arranged on two sides of the outflow connecting runner respectively and are arranged at one end of the plurality of first inflow connecting runners;

step 6, etching a flow storage chamber on the cavity layer, defining the flow storage chamber on the cavity layer through etching, wherein the flow storage chamber is communicated with the outflow connecting flow channel, the first inflow connecting flow channels and the second inflow connecting flow channels;

step 7, providing a pore plate layer to etch a plurality of flow openings, wherein the pore plate layer defines an outlet opening and two inlet openings through etching, and the two inlet openings are respectively and symmetrically arranged at two sides of the outlet opening;

step 8, rolling the dry film on the aperture plate layer and photoetching to form a plurality of channels of a flow channel layer, wherein the aperture plate layer is rolled on the aperture plate layer through a dry film material to form the flow channel layer, then defining an outflow channel communicated with the outflow channel opening, two inflow channels respectively communicated with the two inflow channel openings and a plurality of columnar structures in the flow channel layer through a photoetching process, the columnar structures are symmetrically arranged at two sides of the outflow channel, and the inflow channels are symmetrically arranged at two sides of the outflow channel respectively; and

and 9, carrying out flip chip alignment and thermocompression bonding on the flow channel layer, wherein the flow channel layer is bonded on the second surface of the substrate through flip chip alignment and thermocompression bonding, so that the outlet flow channel port of the orifice plate layer is communicated with the outlet flow channel of the substrate, the plurality of inlet flow channels of the flow channel layer are respectively corresponding to the two inlet flow channels of the substrate, and the two inlet flow channel ports of the orifice plate layer are respectively communicated with the two inlet flow channels of the substrate, so as to form the integral structure of the microfluidic actuator.

2. The method of claim 1, wherein the outlet connecting channel is in communication with the outlet channel, and the first inlet connecting channels and the second inlet connecting channels are in communication with the inlet channels, respectively.

3. The method of claim 1, wherein step 5 further comprises the steps of: forming a first flow through hole in the outlet flow channel through the through hole, and forming a plurality of second flow through holes and two third flow through holes in the two inlet flow channels through the through hole respectively so as to expose the substrate.

4. The method of claim 1, wherein the low temperature deep etch is a deep reactive ion etch process.

5. The method of claim 2, wherein step 6 is performed by etching the reservoir chamber into the cavity layer using a hydrofluoric acid wet etch process.

6. The method of claim 5, wherein the hydrofluoric acid wet etching is performed by etching the cavity layer through the outflow connecting channel, the first inflow connecting channels, and the second inflow connecting channels, and releasing and removing a portion of the cavity layer to define the fluid storage chamber, such that the fluid storage chamber is in communication with the outflow connecting channel, the first inflow connecting channels, and the second inflow connecting channels.

7. The method of claim 1, wherein the plurality of pillar structures are formed in the plurality of inflow channels.

8. The method of claim 1, wherein the substrate is a silicon substrate.

9. The method of claim 1, wherein the oxide material is a silicon dioxide material.

10. The method of claim 1, wherein the first metal material is a platinum metal material.

11. The method of claim 1, wherein the first metal material is a titanium metal material.

12. The method of claim 1, wherein the second metal material is a gold metal material.

13. The method of claim 1, wherein the second metal material is an aluminum metal material.

14. The method of claim 1, wherein the nitride material is a silicon nitride material.

15. The method of claim 1, wherein the orifice plate layer is a stainless steel material.

16. The method of claim 1, wherein the orifice plate layer is a glass material.

17. The method of claim 1, wherein the dry film material is a photosensitive dry film polymer.

18. The method of claim 1, wherein a driving power source with charges of different phases is provided to the upper electrode layer and the lower electrode layer to drive and control the vibrating layer to move up and down, so that fluid is sucked in from the two inlet channels, flows to the reservoir chamber through the first inlet connecting channels and the second inlet connecting channels, and is finally extruded through the outlet connecting channels and then discharged from the outlet channel to complete fluid transmission.

19. The method of claim 18, wherein fluid is drawn from the inlet ports and flows into the reservoir chamber through the inlet channels, the first inlet connecting channels and the second inlet connecting channels in sequence.

20. The method of claim 18, wherein the fluid in the reservoir chamber is extruded to sequentially pass through the outlet connection channel, the outlet channel, and the outlet channel and then is discharged from the outlet port.

21. The method of claim 18, wherein applying a positive voltage to the upper electrode layer and a negative voltage to the lower electrode layer causes the piezoelectric layer to move the vibration layer away from the substrate, external fluid is sucked into the micro fluid actuator from the two inlet channels and flows into the micro fluid actuator through the inlet channels, the two inlet channels, the first inlet connecting channels and the second inlet connecting channels, and then flows into the reservoir chamber, applying a negative voltage to the upper electrode layer and a positive voltage to the lower electrode layer, and moving the vibration layer toward the substrate, so that the volume in the reservoir chamber is compressed by the vibration layer, and the fluid collected in the reservoir chamber can sequentially pass through the outlet connecting channel, The outlet flow channel and the outflow channel are discharged out of the micro-fluid actuator from the outflow channel port to finish the transmission of fluid.

22. A method of manufacturing a microfluidic actuator, comprising the steps of:

step 3, depositing and etching a plurality of actuating layers on the vibration layer, depositing a first metal material on the vibration layer to form a lower electrode layer, depositing a piezoelectric material on the lower electrode layer to form a piezoelectric actuating layer, depositing a second metal material on the piezoelectric actuating layer to form an upper electrode layer, and finally defining the actuating layers by etching;

step 4, etching a plurality of flow channels on the substrate, defining a plurality of outlet flow channels and a plurality of inlet flow channels of the substrate through etching, wherein two inlet flow channels are respectively and symmetrically arranged on two sides of each outlet flow channel;

step 5, the substrate is deposited with a mask layer to etch a plurality of connecting runners, the oxide material is deposited on the second surface of the substrate and in the outlet runners and the inlet runners to form the mask layer, the substrate is exposed through a through hole, the substrate is subjected to low-temperature deep etching to define a plurality of outflow connecting runners, a plurality of first inflow connecting runners and a plurality of second inflow connecting runners, the first inflow connecting runners are symmetrically arranged on two sides of each outflow connecting runner, and two second inflow connecting runners are symmetrically arranged on two sides of each outflow connecting runner respectively;

step 6, etching a plurality of flow storage chambers on the cavity layer, defining the flow storage chambers on the cavity layer through etching, wherein the flow storage chambers are respectively communicated with the outflow connecting channels, the first inflow connecting channels and the second inflow connecting channels;

step 7, providing a pore plate layer to etch a plurality of flow openings, wherein the pore plate layer defines a plurality of outflow opening openings and a plurality of inflow opening openings through etching, and two inflow opening openings are respectively and symmetrically arranged at two sides of each outflow opening;

step 8, rolling the dry film on the aperture plate layer and photoetching to form a plurality of channels of a flow channel layer, wherein the aperture plate layer is rolled on the aperture plate layer through a dry film material to form the flow channel layer, then defining a plurality of outflow channels respectively communicated with the outflow channel openings, a plurality of inflow channels respectively communicated with the inflow channel openings and a plurality of columnar structures in the flow channel layer through a photoetching process, wherein the columnar structures are symmetrically arranged at two sides of each outflow channel, and two inflow channels are symmetrically arranged at two sides of each outflow channel respectively; and

and 9, carrying out flip chip alignment and thermocompression bonding on the flow channel layer, wherein the flow channel layer is bonded on the second surface of the substrate through flip chip alignment and thermocompression bonding, so that the plurality of outlet channels of the orifice plate layer are respectively communicated with the plurality of outlet channels of the substrate, the plurality of inlet channels of the flow channel layer are respectively corresponding to the plurality of inlet channels of the substrate, and the plurality of inlet channels of the orifice plate layer are respectively communicated with the plurality of inlet channels of the substrate, so as to form the integral structure of the microfluidic actuator.

23. A method of manufacturing a microfluidic actuator, comprising the steps of:

step 3, depositing and etching at least one actuating layer on the vibrating layer, depositing a first metal material on the vibrating layer to form a lower electrode layer, depositing a piezoelectric material on the lower electrode layer to form a piezoelectric actuating layer, depositing a second metal material on the piezoelectric actuating layer to form an upper electrode layer, and finally defining the actuating layer by etching;

step 4, etching a plurality of flow channels on the substrate, and defining at least one outlet flow channel and at least one inlet flow channel of the substrate through etching;

step 5, the substrate is deposited with a mask layer to etch a plurality of connecting runners, the oxide material is deposited on the second surface of the substrate and in the at least one outlet runner and the at least one inlet runner to form the mask layer, the substrate is exposed through the through hole, and the substrate is deeply etched at a low temperature to define at least one outflow connecting runner, a plurality of first inflow connecting runners and at least one second inflow connecting runner;

step 6, etching at least one flow storage chamber on the cavity layer, defining the at least one flow storage chamber on the cavity layer through etching, wherein the at least one flow storage chamber is communicated with the at least one outflow connecting flow channel, the plurality of first inflow connecting flow channels and the at least one second inflow connecting flow channel;

step 7, providing an orifice plate layer to etch a plurality of runner openings, wherein the orifice plate layer defines at least one runner opening and at least one runner opening through etching;

step 8, rolling the dry film on the aperture plate layer and photoetching to form a plurality of channels of a runner layer, wherein the aperture plate layer is firstly rolled on the aperture plate layer through a dry film material to form the runner layer, and then defining at least one outflow channel communicated with the at least one outflow channel opening, at least one inflow channel communicated with the at least one inflow channel opening and a plurality of columnar structures in the runner layer through a photoetching process; and

and 9, carrying out flip chip alignment and thermocompression bonding on the flow channel layer, wherein the flow channel layer is bonded on the second surface of the substrate through flip chip alignment and thermocompression bonding, so that the at least one outlet channel opening of the orifice plate layer is communicated with the at least one outlet channel of the substrate, the at least one inlet channel of the flow channel layer is communicated with the at least one inlet channel of the substrate, and the at least one inlet channel opening of the orifice plate layer is communicated with the at least one inlet channel of the substrate, so as to form the integral structure of the microfluidic actuator.