TW202014559A - System for chemical and/or electrolytic surface treatment - Google Patents

System for chemical and/or electrolytic surface treatment Download PDF

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TW202014559A
TW202014559A TW108147586A TW108147586A TW202014559A TW 202014559 A TW202014559 A TW 202014559A TW 108147586 A TW108147586 A TW 108147586A TW 108147586 A TW108147586 A TW 108147586A TW 202014559 A TW202014559 A TW 202014559A
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tank
process fluid
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expansion
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安德魯斯 格雷斯尼爾
奧利佛 克諾
湯瑪士 沃恩斯伯格
赫伯特 奧茲林格
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奧地利商勝思科技有限公司
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract

The invention relates to a system for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a device for chemical and/or electrolytic surface treatment of a substrate in a process fluid, and a method for chemical and/or electrolytic surface treatment of a substrate in a process fluid. The system for chemical and/or electrolytic surface treatment comprises a basin, a fluid passage, an expansion tank, and a control unit. The basin is configured for the chemical and/or electrolytic surface treatment of the substrate in the process fluid. The fluid passage links the basin and the expansion tank. The expansion tank is configured to hold an expansion volume of the process fluid. The control unit and the fluid passage are configured to maintain a level of the process fluid in the basin essentially constant.

Description

用於化學及/或電解表面處理之系統Systems for chemical and/or electrolytic surface treatment

本發明係關於一種用於在一製程流體中化學及/或電解表面處理一基板之系統、一種用於在一製程流體中化學及/或電解表面處理一基板之裝置,及一種用於在一製程流體中化學及/或電解表面處理一基板之方法。The present invention relates to a system for chemically and/or electrolytically surface treating a substrate in a process fluid, a device for chemically and/or electrolytically surface treating a substrate in a process fluid, and a device for A method of chemically and/or electrolytically treating a substrate in a process fluid.

在半導體產業中,各種程序可用於將材料沈積於晶圓之表面上或自晶圓之表面移除材料。In the semiconductor industry, various procedures can be used to deposit material on or remove material from the surface of the wafer.

例如,電化學沈積(ECD)或電化學機械沈積(ECMD)程序可用於將導體(諸如銅)沈積於先前經圖案化之晶圓表面上以製造裝置互連結構。For example, electrochemical deposition (ECD) or electrochemical mechanical deposition (ECMD) procedures can be used to deposit conductors (such as copper) on the surface of previously patterned wafers to fabricate device interconnect structures.

化學機械拋光(CMP)通常用於一材料移除步驟。另一技術(電拋光或電蝕刻)亦可用於自晶圓之表面移除過量材料。Chemical mechanical polishing (CMP) is commonly used in a material removal step. Another technique (electropolishing or electroetching) can also be used to remove excess material from the surface of the wafer.

將材料電化學(或電化學機械)沈積於晶圓表面上或自該等晶圓表面電化學(或電化學機械)移除材料統稱為「電化學處理」。電化學、化學及/或電解處理技術可包括電拋光(或電蝕刻)、電化學機械拋光(或電化學機械蝕刻)、電化學沈積及電化學機械沈積。所有技術利用一製程流體。The electrochemical deposition (or electrochemical mechanical) of materials on or removal of materials from the wafer surface is collectively referred to as "electrochemical processing". Electrochemical, chemical, and/or electrolytic processing techniques may include electropolishing (or electroetching), electrochemical mechanical polishing (or electrochemical mechanical etching), electrochemical deposition, and electrochemical mechanical deposition. All technologies utilize a process fluid.

化學及/或電解表面處理技術涉及以下步驟。待處理之一基板附接至一基板固持件,浸入至一電解製程流體中且用作一陰極。一電極被浸入至該製程流體中且用作一陽極。一直流電經施加至該製程流體且使帶正電荷之金屬離子在該陽極處解離。該等離子接著遷移至該陰極,在該陰極處其等電鍍附接至該陰極之該基板。The chemical and/or electrolytic surface treatment techniques involve the following steps. A substrate to be processed is attached to a substrate holder, immersed in an electrolytic process fluid and used as a cathode. An electrode is immersed in the process fluid and used as an anode. A direct current is applied to the process fluid and dissociates positively charged metal ions at the anode. The plasma then migrates to the cathode, where it is attached to the substrate of the cathode by equal plating.

此一程序之一個難點在於,在將晶圓下降至製程溶液中時,氣泡可能被截留在晶圓下面。若程序係用於(例如)銅之一沈積程序,則此等氣泡防止銅沈積至晶圓表面上之含氣泡區域中,從而產生表示電鍍材料中之缺陷之未電鍍或電鍍不足區域。此等缺陷降低互連結構之可靠性。類似地,在電拋光程序中,經截留之氣泡延遲自含有氣泡之區域之材料移除,從而產生非均勻性及缺陷且引起可靠性問題。One difficulty with this procedure is that when lowering the wafer into the process solution, bubbles may be trapped under the wafer. If the procedure is used for, for example, one of the copper deposition procedures, these bubbles prevent copper from being deposited into the bubble-containing areas on the wafer surface, thereby creating unplated or underplated areas that represent defects in the plating material. These defects reduce the reliability of the interconnect structure. Similarly, in the electro-polishing process, trapped bubbles are delayed from the material removal in the area containing the bubbles, resulting in non-uniformity and defects and causing reliability problems.

US 2004/182712A1在此揭示用於在使一晶圓表面與用於一電化學程序之一製程溶液接觸時防止該表面之一選定區域上之氣泡形成之一預濕潤方法及系統。在該程序期間,最初使晶圓表面緊鄰該製程溶液之表面。接著,引導一製程溶液流朝向晶圓表面之該選定區域達一預定時間。在以下步驟中,晶圓表面之選定區域與該製程溶液流接觸達該預定時間以防止氣泡形成,且晶圓表面浸入於該製程溶液中以用於電化學處理。US 2004/182712A1 discloses a pre-wetting method and system for preventing the formation of bubbles on a selected area of a surface when contacting a wafer surface with a process solution for an electrochemical process. During this process, the wafer surface is initially brought close to the surface of the process solution. Next, a process solution flow is directed toward the selected area of the wafer surface for a predetermined time. In the following steps, selected areas of the wafer surface are contacted with the process solution flow for the predetermined time to prevent the formation of bubbles, and the wafer surface is immersed in the process solution for electrochemical processing.

然而,此預濕潤方法並非一最佳方法。However, this pre-wetting method is not an optimal method.

因此,可能需要提供用於在一製程流體中化學及/或電解表面處理一基板之一改良系統,該改良系統仍容許該基板上之一較佳及更均勻材料沈積。Therefore, it may be necessary to provide an improved system for chemical and/or electrolytic surface treatment of a substrate in a process fluid that still allows for a better and more uniform material deposition on the substrate.

本發明之問題係藉由獨立技術方案之標的解決,其中進一步實施例併入於附屬技術方案中。應注意,下文所描述之本發明之態樣亦應用於用於在一製程流體中化學及/或電解表面處理一基板之系統、用於在一製程流體中化學及/或電解表面處理一基板之裝置,及用於在一製程流體中化學及/或電解表面處理一基板之方法。The problem of the present invention is solved by the subject of an independent technical solution, in which further embodiments are incorporated in the auxiliary technical solution. It should be noted that the aspects of the invention described below also apply to systems for chemically and/or electrolytically surface treating a substrate in a process fluid, and for chemically and/or electrolytically surface treating a substrate in a process fluid Device and method for chemically and/or electrolytically treating a substrate in a process fluid.

根據本發明,提出一種用於在一製程流體中化學及/或電解表面處理一基板之系統。According to the present invention, a system for chemically and/or electrolytically treating a substrate in a process fluid is proposed.

化學及/或電解表面處理可為任何材料沈積、鍍鋅塗佈、化學或電化學蝕刻、陽極氧化、金屬分離或類似者。The chemical and/or electrolytic surface treatment can be any material deposition, galvanized coating, chemical or electrochemical etching, anodizing, metal separation or the like.

基板可包括一導體板、一半導體基板、一膜基板、一基本上板狀、金屬或金屬化工件或類似者。待處理之基板之一表面可至少部分經遮罩或未遮罩。The substrate may include a conductor plate, a semiconductor substrate, a film substrate, a substantially plate-shaped, metal or metalized workpiece, or the like. A surface of the substrate to be processed may be at least partially masked or unmasked.

用於化學及/或電解表面處理之系統包括一槽、一流體通道、一膨脹罐及一控制單元。The system for chemical and/or electrolytic surface treatment includes a tank, a fluid channel, an expansion tank and a control unit.

該槽經組態以用於在製程流體中化學及/或電解表面處理基板。換言之,其係其中處理(例如,塗佈)基板之貯器。槽可為其中可垂直插入基板之一垂直電鍍腔室。The tank is configured for chemical and/or electrolytic surface treatment of substrates in process fluids. In other words, it is a receptacle in which the substrate is processed (eg, coated). The groove may be one of the vertical plating chambers into which the substrate can be inserted vertically.

流體通道連結槽與膨脹罐。其可為槽與膨脹罐之間的一連接件或管道。The fluid channel connects the groove and the expansion tank. It can be a connecting piece or pipe between the tank and the expansion tank.

膨脹罐經組態以保持製程流體之一膨脹體積。其可為靠近槽配置之另一貯器。膨脹罐可具有小於槽之一體積。The expansion tank is configured to maintain one of the expansion volumes of the process fluid. It may be another receptacle arranged close to the tank. The expansion tank may have a volume less than one of the tank.

控制單元可為一處理器。其可偵測槽及/或膨脹罐中之製程流體之液位。其可操作製程流體以進入或排出槽及/或膨脹罐。The control unit may be a processor. It can detect the level of process fluid in the tank and/or expansion tank. It can operate the process fluid to enter or exit the tank and/or expansion tank.

控制單元及流體通道經組態以使槽中之製程流體之一液位維持基本上恆定。術語「基本上恆定」可理解為槽中之液態製程流體之一高度保持於相同液位,無關於一外部影響。術語「基本上恆定」可理解為在大於或小於完全恆定15%之一範圍中、較佳在大於或小於完全恆定10%之一範圍中,且更佳在大於或小於完全恆定5%之一範圍中。控制單元及流體通道亦可經組態以使槽中之製程流體之一液位維持恆定。術語「基本上恆定」可理解為不足大於或小於完全恆定5%。控制單元及流體通道亦可經組態以使槽中之製程流體之一液位維持恆定(在完全恆定之意義上)。The control unit and the fluid channel are configured to maintain a substantially constant level of one of the process fluids in the tank. The term "substantially constant" can be understood as that one of the liquid process fluids in the tank is kept at the same level, regardless of an external influence. The term "substantially constant" is understood to be in the range of greater than or less than 15% of completely constant, preferably in the range of more than or less than 10% of completely constant, and more preferably in the range of more than or less than 5% of completely constant In scope. The control unit and the fluid channel can also be configured to maintain a constant level of the process fluid in the tank. The term "substantially constant" is understood to be less than or greater than 5% which is completely constant. The control unit and the fluid channel can also be configured to maintain a constant level of process fluid in the tank (in the sense of being completely constant).

根據本發明之用於在一製程流體中化學及/或電解表面處理一基板之系統容許防止用於化學及/或電解表面處理之一裝置之組件(舉例而言,如待配置於槽中之一分配本體)之乾燥。乾燥可導致製程流體之顆粒之有害結晶。該分配本體可為經組態以引導製程流體及/或電流流動至該基板之一組件。The system for chemically and/or electrolytically surface treating a substrate in a process fluid according to the present invention allows to prevent components of a device used for chemical and/or electrolytic surface treatment (for example, if to be disposed in a tank (1) Distributing the body). Drying can cause harmful crystallization of process fluid particles. The distribution body may be a component configured to direct the flow of process fluid and/or current to the substrate.

根據本發明之用於化學及/或電解表面處理之系統可進一步容許防止引入空氣至用於化學及/或電解表面處理之一裝置之組件(舉例而言,如分配本體、一陽極及/或包括該分配本體及/或該陽極之一圍封體)中。引入空氣可導致製程流體之顆粒之有害氧化及/或基板之一所謂之氣泡屏蔽。The system for chemical and/or electrolytic surface treatment according to the present invention may further allow preventing the introduction of air to components of a device for chemical and/or electrolytic surface treatment (for example, such as a distribution body, an anode and/or Including the distribution body and/or the enclosure of the anode). The introduction of air can cause harmful oxidation of particles of the process fluid and/or so-called bubble shielding of one of the substrates.

因此,根據本發明之用於化學及/或電解表面處理之系統容許基板表面上之一均勻液體流動、基板與一反電極之間的一電場之一標定分配,及藉此基板上之一更容易及更均勻材料沈積。Therefore, the system for chemical and/or electrolytic surface treatment according to the present invention allows a uniform liquid flow on the surface of the substrate, a calibration distribution of an electric field between the substrate and a counter electrode, and Easy and more uniform material deposition.

在一實例中,基板固持件固持基板。此處防止之可改變槽中之製程流體之液位之外部影響可為僅插入及/或移除一基板固持件或固持一或兩個基板(該基板固持件之各側上各一個基板)。在一實例中,控制單元經組態以在一基板固持件自槽移除時使製程流體之液位維持基本上恆定。在一實例中,流體通道經組態以在基板固持件插入至槽中時使製程流體之液位維持基本上恆定。基板固持件可置換(例如) 20公升之一體積,而膨脹罐可具有(例如) 30公升之一體積。In one example, the substrate holder holds the substrate. The external influence that can be prevented here to change the level of the process fluid in the tank can be to insert and/or remove only one substrate holder or to hold one or two substrates (one substrate on each side of the substrate holder) . In one example, the control unit is configured to maintain the process fluid level substantially constant when a substrate holder is removed from the tank. In one example, the fluid channel is configured to maintain a substantially constant level of process fluid when the substrate holder is inserted into the tank. The substrate holder may replace a volume of, for example, 20 liters, and the expansion tank may have a volume of, for example, 30 liters.

此處防止之可改變槽中之製程流體之液位之外部影響亦可為製程流體之一蒸發、一沖洗、一溢出、一故障或類似者。The external influence that can be prevented here from changing the level of the process fluid in the tank can also be one of the process fluid evaporation, a flush, a spill, a fault, or the like.

在一實例中,系統進一步包括經組態以使製程流體在槽與膨脹罐之間連續循環之一泵抽構件。該泵抽構件可為一泵。其可將製程流體自槽永久地泵抽至膨脹罐且返回。In one example, the system further includes a pumping member configured to continuously circulate the process fluid between the tank and the expansion tank. The pumping member may be a pump. It can permanently pump process fluid from the tank to the expansion tank and back.

在一實例中,泵抽構件經組態以增加一泵抽體積以平衡基板固持件之移除。換言之,當一膨脹體積已自槽泵抽至膨脹罐時,此可藉由每次增加泵抽體積(例如,藉由增加一馬達速度)而實現。相比而言,泵抽構件亦可經組態以僅在一膨脹體積需移動以使槽中之製程流體之液位保持基本上恆定之情況下使製程流體在槽與膨脹罐之間移動。In one example, the pumping member is configured to increase a pumping volume to balance the removal of the substrate holder. In other words, when an expansion volume has been pumped from the tank to the expansion tank, this can be achieved by increasing the pumping volume each time (for example, by increasing a motor speed). In contrast, the pumping member can also be configured to move the process fluid between the tank and the expansion tank only if the expansion volume needs to be moved to keep the level of the process fluid in the tank substantially constant.

在一實例中,流體通道連結槽之一滿溢出口與膨脹罐。In one example, one of the fluid channels connects the overflow port and the expansion tank to one of the grooves.

在一實例中,控制單元經組態以使製程流體之液位維持於高於待配置於槽中之一分配本體之一最上方部分。該分配本體可為經組態以引導製程流體及/電流流動至基板之一組件。在另一實例中,控制單元經組態以使製程流體之液位基本上維持於待配置於槽中之一分配本體之一最上方部分之一液位。兩種可能性皆容許防止由乾燥、引入空氣或類似者對分配本體造成之任何損壞。在一實例中,控制單元經組態以防止待配置於槽中之分配本體之乾燥。在一實例中,控制單元經組態以防止引入空氣至待配置於槽中之分配本體中。In one example, the control unit is configured to maintain the process fluid level above the uppermost portion of one of the distribution bodies to be disposed in the tank. The distribution body may be a component configured to direct the flow of process fluid and/or current to the substrate. In another example, the control unit is configured to maintain the liquid level of the process fluid substantially at a liquid level in the uppermost portion of one of the distribution bodies to be configured in the tank. Both possibilities allow to prevent any damage to the dispensing body caused by drying, the introduction of air or the like. In one example, the control unit is configured to prevent the distribution body to be disposed in the tank from drying. In one example, the control unit is configured to prevent the introduction of air into the distribution body to be configured in the tank.

在一實例中,系統進一步包括一溫度控制系統,該溫度控制系統經組態以偵測製程流體之一溫度及(例如)藉由加熱及/或冷卻而控制製程流體之該溫度之一變化。In one example, the system further includes a temperature control system configured to detect a temperature of the process fluid and control a change in the temperature of the process fluid, for example, by heating and/or cooling.

在一實例中,系統進一步包括一成分控制系統,該成分控制系統經組態以偵測製程流體之一化學性質及控制製程流體之該化學性質之一變化。製程流體之該化學性質可為一成分、一pH值、一添加劑之量或類似者。化學性質之該變化可藉由添加某一組分而實現。In one example, the system further includes a composition control system configured to detect a chemical property of the process fluid and control a change in the chemical property of the process fluid. The chemical nature of the process fluid can be a component, a pH, an additive amount, or the like. This change in chemical properties can be achieved by adding a certain component.

根據本發明,亦提出一種用於在一製程流體中化學及/或電解表面處理一基板之裝置。用於化學及/或電解表面處理之該裝置包括如上文所描述之用於在一製程流體中化學及/或電解表面處理一基板之一系統及一基板固持件。該基板固持件經組態以固持該基板。該基板固持件可經組態以固持一或兩個基板(基板固持件之各側上各一個基板)。According to the present invention, an apparatus for chemically and/or electrolytically treating a substrate in a process fluid is also proposed. The device for chemical and/or electrolytic surface treatment includes a system and a substrate holder for chemical and/or electrolytic surface treatment of a substrate in a process fluid as described above. The substrate holding member is configured to hold the substrate. The substrate holder can be configured to hold one or two substrates (one substrate on each side of the substrate holder).

根據本發明,亦提出一種用於在一製程流體中化學及/或電解表面處理一基板之方法。用於化學及/或電解表面處理之該方法包括以下步驟,但不一定按此順序: a)          將該製程流體之一膨脹體積自用於化學及/或電解表面處理該基板之一槽導引至一膨脹罐,及 b)          將製程流體之該膨脹體積自該膨脹罐重新插入至該槽,使得該槽中之製程流體之一液位維持基本上恆定。According to the present invention, a method for chemically and/or electrolytically treating a substrate in a process fluid is also proposed. The method for chemical and/or electrolytic surface treatment includes the following steps, but not necessarily in this order: a) leading an expansion volume of the process fluid from a tank used for chemical and/or electrolytic surface treatment of the substrate to an expansion tank, and b) Re-insert the expansion volume of the process fluid from the expansion tank into the tank, so that the level of one of the process fluids in the tank remains substantially constant.

在一實例中,用於化學及/或電解表面處理之方法進一步包括以下步驟: -  將一基板固持件插入至槽,此與步驟a)相關,及 -  自槽移除該基板固持件,此與步驟b)相關。In one example, the method for chemical and/or electrolytic surface treatment further includes the following steps: -Insert a substrate holder into the slot, which is related to step a), and -Remove the substrate holder from the slot, which is related to step b).

基板固持件可固持一或兩個基板(基板固持件之各側上各一個基板)。The substrate holder can hold one or two substrates (one substrate on each side of the substrate holder).

在一實例中,製程流體係在槽與膨脹罐之間連續循環。In one example, the process flow system continuously circulates between the tank and the expansion tank.

在一實例中,方法進一步包括一溫度控制方法,該溫度控制方法經組態以偵測製程流體之一溫度及(例如)藉由加熱及/或冷卻而控制製程流體之該溫度之一變化。In one example, the method further includes a temperature control method configured to detect a temperature of the process fluid and control a change in the temperature of the process fluid, for example, by heating and/or cooling.

在一實例中,方法進一步包括一成分控制方法,該成分控制方法經組態以偵測製程流體之一化學性質及控制製程流體之該化學性質之一變化。製程流體之該化學性質可為一成分、一pH值、一添加劑之量或類似者。化學性質之該變化可藉由添加某一組分而實現。In one example, the method further includes a composition control method configured to detect a chemical property of the process fluid and control a change in the chemical property of the process fluid. The chemical nature of the process fluid can be a component, a pH, an additive amount, or the like. This change in chemical properties can be achieved by adding a certain component.

因此,本發明係關於出於基板之整個表面之一可控制材料運輸之目的在近似平坦基板上實現局部界定之液體流動之一方法,以及用於構造實現根據本發明之方法之一裝置。同時,本發明容許一導電基板表面上之一電場之標定分配。Therefore, the present invention relates to a method for achieving locally defined liquid flow on an approximately flat substrate for the purpose of controllable material transport on one of the entire surface of the substrate, and for constructing a device for implementing the method according to the present invention. At the same time, the invention allows the calibration distribution of an electric field on the surface of a conductive substrate.

裝置及方法係尤其適於處理結構化半導體基板、導體板及膜基板,而且亦適於處理平坦金屬及金屬化基板之整個表面。裝置及方法亦可根據本發明用於製造用於太陽能發電之大表面光電面板,或大型顯示器面板。The device and method are particularly suitable for processing structured semiconductor substrates, conductor plates, and film substrates, and are also suitable for processing the entire surface of flat metals and metallized substrates. The device and method can also be used to manufacture large surface photovoltaic panels for solar power generation, or large display panels according to the present invention.

應理解,根據獨立技術方案之用於在一製程流體中化學及/或電解表面處理一基板之系統、裝置及方法具有特定言之如附屬技術方案中所定義之類似及/或相同較佳實施例。應進一步理解,本發明之一較佳實施例亦可為附屬技術方案與各自獨立技術方案之任何組合。It should be understood that the systems, devices and methods for chemically and/or electrolytically surface treating a substrate in a process fluid according to independent technical solutions have specific and similar preferred implementations as defined in the accompanying technical solutions example. It should be further understood that a preferred embodiment of the present invention may also be any combination of subsidiary technical solutions and respective independent technical solutions.

將自下文所描述之實施例明白及參考下文所描述之實施例闡明本發明之此等及其他態樣。These and other aspects of the invention will be apparent from the embodiments described below and clarified with reference to the embodiments described below.

圖1、圖3及圖4示意性及例示性地展示根據本發明之用於在一製程流體中化學及/或電解表面處理一基板30之一裝置100之一實施例。用於化學及/或電解表面處理之裝置100包括一基板固持件20及用於在一製程流體中化學及/或電解表面處理一基板30之一系統10。1, 3 and 4 show schematically and exemplarily an embodiment of a device 100 for chemically and/or electrolytically treating a substrate 30 in a process fluid according to the present invention. The device 100 for chemical and/or electrolytic surface treatment includes a substrate holder 20 and a system 10 for chemically and/or electrolytically surface treating a substrate 30 in a process fluid.

基板固持件20係展示於圖2中且經組態以固持基板30。基板固持件20此處固持兩個基板30 (基板固持件20之各側上各一個基板30)。基板固持件20亦可經組態以僅固持可自一或兩側處理之一個基板。The substrate holder 20 is shown in FIG. 2 and is configured to hold the substrate 30. The substrate holder 20 here holds two substrates 30 (one substrate 30 on each side of the substrate holder 20). The substrate holding member 20 can also be configured to hold only one substrate that can be processed from one or both sides.

如圖1、圖3及圖4中所展示之用於在一製程流體中化學及/或電解表面處理一基板30之系統10產生用於一化學及/或電解表面處理之標定流動及電流密度圖案。系統10包括浸沒於一製程流體(未展示)中之兩個分配本體21。附接至一基板固持件20之一基板30與各分配本體21相對。基板30之表面係受製程流體濕潤。存在兩個電極,此處兩個陽極22,其等各定位於分配本體21之與基板30相對之一側上,且其等亦浸浴於製程流體中。The system 10 for chemically and/or electrolytically treating a substrate 30 in a process fluid as shown in FIGS. 1, 3, and 4 produces a calibration flow and current density for a chemical and/or electrolytic surface treatment pattern. The system 10 includes two distribution bodies 21 immersed in a process fluid (not shown). A substrate 30 attached to a substrate holder 20 is opposed to each distribution body 21. The surface of the substrate 30 is wetted by the process fluid. There are two electrodes, here two anodes 22, each of which is positioned on the side of the distribution body 21 opposite to the substrate 30, and which is also immersed in the process fluid.

分配本體21具有用於製程流體之至少一入口開口23及在分配本體21之一正面處之終止於一出口噴嘴陣列(未展示)處之至少一液體通道。泵抽之製程流體沿著基板30之方向以一相對較高速度流動通過該等出口噴嘴且在該位置處進行所要化學及/或電解反應。The distribution body 21 has at least one inlet opening 23 for process fluid and at least one liquid channel at a front face of the distribution body 21 that terminates at an outlet nozzle array (not shown). The pumped process fluid flows through the outlet nozzles at a relatively high velocity in the direction of the substrate 30 and performs the desired chemical and/or electrolytic reactions at that location.

基板30可為用於產生電組件或電子組件之一基本上板狀工件,該基本上板狀工件機械地固定於一基板固持件20中,且待處理之其表面浸浴於作為來自分配本體21之處理介質之製程流體中。在一特殊情況下,基板30可為一經遮罩或未遮罩導體板、一半導體基板或一膜基板或甚至具有一近似平坦表面之任何金屬或金屬化工件。The substrate 30 may be a substantially plate-shaped workpiece for producing an electrical component or an electronic component, the substantially plate-shaped workpiece is mechanically fixed in a substrate holder 20, and its surface to be processed is bathed as a distributing body 21 in the process fluid of the processing medium. In a special case, the substrate 30 may be a masked or unmasked conductor plate, a semiconductor substrate or a film substrate, or even any metal or metalized workpiece having an approximately flat surface.

分配本體可有利地由塑膠組成,以尤其有利方式由聚丙烯、聚氯乙烯、聚乙烯、丙烯酸玻璃(即,聚甲基丙烯酸甲酯)、聚四氟乙烯或不會被製程溶液分解之另一材料組成。The dispensing body may advantageously be composed of plastic, in a particularly advantageous manner polypropylene, polyvinyl chloride, polyethylene, acrylic glass (ie, polymethyl methacrylate), polytetrafluoroethylene or another that will not be decomposed by the process solution One material composition.

陽極22附接於分配本體21之一後方區域中,與分配本體21機械接觸或與分配本體21空間分離,使得電流流動在陽極22與在製程流體內作為反電極之基板30之間進行。取決於所使用之表面處理方法,陽極22可由不溶於製程液體中之一材料(諸如鍍鉑鈦)或另外一可溶材料(舉例而言,諸如待鍍鋅分離之金屬)組成。The anode 22 is attached to a rear area of the distribution body 21, is in mechanical contact with the distribution body 21 or is spatially separated from the distribution body 21, so that current flows between the anode 22 and the substrate 30 serving as a counter electrode in the process fluid. Depending on the surface treatment method used, the anode 22 may be composed of one material that is insoluble in the process liquid (such as platinum-plated titanium) or another soluble material (such as, for example, a metal to be separated by zinc plating).

圖3及圖4示意性及例示性地展示根據本發明之用於在一製程流體中化學及/或電解表面處理一基板30之系統10之一實施例。用於化學及/或電解表面處理之系統10包括一槽11、一流體通道12、一膨脹罐13及一控制單元14。具有基板30之基板固持件20在圖3中配置於槽11中且在圖4中配置於槽11外部。FIGS. 3 and 4 schematically and exemplarily show an embodiment of a system 10 for chemically and/or electrolytically treating a substrate 30 in a process fluid according to the present invention. The system 10 for chemical and/or electrolytic surface treatment includes a tank 11, a fluid channel 12, an expansion tank 13 and a control unit 14. The substrate holder 20 having the substrate 30 is arranged in the groove 11 in FIG. 3 and outside the groove 11 in FIG. 4.

槽11經組態以用於在製程流體中化學及/或電解表面處理基板30且形成其中處理基板30之貯器。槽11係其中垂直插入基板30 (未展示)之一垂直電鍍腔室。The tank 11 is configured for chemically and/or electrolytically surface treating the substrate 30 in the process fluid and forming a reservoir in which the substrate 30 is processed. The groove 11 is a vertical plating chamber into which the substrate 30 (not shown) is vertically inserted.

流體通道12以介於槽11與膨脹罐13之間的一管道之形式連結槽11與膨脹罐13。The fluid channel 12 connects the tank 11 and the expansion tank 13 in the form of a pipe between the tank 11 and the expansion tank 13.

膨脹罐13保持製程流體之一膨脹體積且靠近槽11配置。膨脹罐13具有小於槽11之一體積。The expansion tank 13 holds one of the expansion volumes of the process fluid and is arranged close to the tank 11. The expansion tank 13 has a volume smaller than the groove 11.

控制單元14此處為一處理器。其偵測槽11中之製程流體之液位且操作該製程流體以進入或排出槽11及/或膨脹罐13。其可因此控制一泵抽構件15。The control unit 14 is here a processor. It detects the level of the process fluid in the tank 11 and operates the process fluid to enter or exit the tank 11 and/or the expansion tank 13. It can thus control a pumping member 15.

控制單元14及流體通道12使槽11中之製程流體之一液位維持基本上恆定。術語「基本上恆定」可理解為槽11中之液態製程流體之一高度保持於相同液位,無關於一外部影響。The control unit 14 and the fluid channel 12 maintain a substantially constant level of one of the process fluids in the tank 11. The term "substantially constant" is understood to mean that one of the liquid process fluids in the tank 11 is maintained at the same level, regardless of an external influence.

當自槽11移除不具有基板30或具有一或兩個基板30之基板固持件20時(圖4)及在將基板固持件20插入至槽11中時(圖3),控制單元14使製程流體之液位維持基本上恆定。膨脹罐13中之製程流體之一液位L因此自圖3減小至圖4。When removing the substrate holder 20 without the substrate 30 or with one or two substrates 30 from the slot 11 (FIG. 4) and when inserting the substrate holder 20 into the slot 11 (FIG. 3), the control unit 14 enables The liquid level of the process fluid is maintained substantially constant. One level L of the process fluid in the expansion tank 13 is therefore reduced from FIG. 3 to FIG. 4.

系統10進一步包括用以使製程流體在槽11與膨脹罐13之間(其意謂自槽11至膨脹罐13且返回)連續循環之一泵抽構件15。泵抽構件15可增加一泵抽體積以平衡基板固持件20之移除。The system 10 further includes a pumping member 15 to continuously circulate the process fluid between the tank 11 and the expansion tank 13 (which means from the tank 11 to the expansion tank 13 and back). The pumping member 15 can increase a pumping volume to balance the removal of the substrate holder 20.

流體通道12連結槽11之一滿溢出口16與膨脹罐13。The fluid passage 12 connects one of the grooves 11 to the overflow port 16 and the expansion tank 13.

控制單元14使製程流體之液位維持於高於配置於槽11中之一分配本體21之一最上方部分。控制單元14亦可使製程流體之液位基本上維持於配置於槽11中之一分配本體21之該最上方部分之一液位。兩種可能性皆容許防止由乾燥、引入空氣或類似者對分配本體21造成之任何損壞。藉此,控制單元14防止槽11中之分配本體21之乾燥。此外,控制單元14防止引入空氣至分配本體21中。The control unit 14 maintains the liquid level of the process fluid above the uppermost portion of one of the distribution bodies 21 disposed in the tank 11. The control unit 14 can also maintain the liquid level of the process fluid substantially at a liquid level of the uppermost portion of a distribution body 21 arranged in the tank 11. Both possibilities allow to prevent any damage to the dispensing body 21 caused by drying, introducing air or the like. Thereby, the control unit 14 prevents the distribution body 21 in the tank 11 from drying. In addition, the control unit 14 prevents the introduction of air into the distribution body 21.

系統10進一步包括用以偵測製程流體之一溫度及(例如)藉由加熱及/或冷卻而控制製程流體之該溫度之一變化之一溫度控制系統17。The system 10 further includes a temperature control system 17 for detecting a temperature of the process fluid and controlling a change in the temperature of the process fluid, for example, by heating and/or cooling.

系統10進一步包括用以偵測製程流體之一化學性質及控制製程流體之該化學性質之一變化之一成分控制系統18。製程流體之該化學性質可為一成分、一pH值、一添加劑之量或類似者。化學性質之該變化可藉由添加某一組分而實現。The system 10 further includes a composition control system 18 for detecting a chemical property of the process fluid and controlling a change in the chemical property of the process fluid. The chemical nature of the process fluid can be a component, a pH, an additive amount, or the like. This change in chemical properties can be achieved by adding a certain component.

根據本發明之用於在製程流體中化學及/或電解表面處理基板30之系統10容許防止用於化學及/或電解表面處理之一裝置100之組件之乾燥。其可進一步容許防止引入空氣至用於化學及/或電解表面處理之一裝置100之組件中。因此,根據本發明之用於化學及/或電解表面處理之系統10容許基板表面上之一均勻液體流動、基板30與一反電極之間的一電場之一標定分配,及藉此基板30上之一更容易及更均勻材料沈積。The system 10 for the chemical and/or electrolytic surface treatment of substrates 30 in process fluids according to the present invention allows to prevent the drying of components of an apparatus 100 for chemical and/or electrolytic surface treatment. It may further allow preventing the introduction of air into the components of a device 100 for chemical and/or electrolytic surface treatment. Therefore, the system 10 for chemical and/or electrolytic surface treatment according to the present invention allows a uniform liquid flow on the substrate surface, a calibration distribution of an electric field between the substrate 30 and a counter electrode, and thereby on the substrate 30 One is easier and more uniform material deposition.

圖5展示用於在一製程流體中化學及/或電解表面處理一基板30之一方法之步驟之一示意性概述。用於化學及/或電解表面處理之該方法包括以下步驟: -  在一第一步驟S1中,將該製程流體之一膨脹體積自用於化學及/或電解表面處理基板30之一槽11導引至一膨脹罐13。 -  在一第二步驟S2中,將製程流體之該膨脹體積自膨脹罐13重新插入至槽11,使得槽11中之製程流體之一液位維持基本上恆定。FIG. 5 shows a schematic overview of the steps of a method for chemical and/or electrolytic surface treatment of a substrate 30 in a process fluid. The method for chemical and/or electrolytic surface treatment includes the following steps: -In a first step S1, an expansion volume of the process fluid is led from a tank 11 for chemical and/or electrolytic surface treatment substrate 30 to an expansion tank 13. -In a second step S2, the expansion volume of the process fluid is reinserted from the expansion tank 13 into the tank 11, so that the level of one of the process fluid in the tank 11 remains substantially constant.

用於化學及/或電解表面處理之方法可進一步包括:將一基板固持件20插入至槽11中,此與步驟S1相關;及自槽11移除基板固持件20,此與步驟S2相關。The method for chemical and/or electrolytic surface treatment may further include: inserting a substrate holder 20 into the groove 11, which is related to step S1; and removing the substrate holder 20 from the groove 11, which is related to step S2.

基板固持件20可固持一或兩個基板(圖2中展示基板固持件20之各側上有一個基板30)。The substrate holder 20 can hold one or two substrates (one substrate 30 is shown on each side of the substrate holder 20 shown in FIG. 2).

應注意,本發明之實施例係參考不同標的描述。特定言之,一些實施例係參考方法類型請求項描述,而其他實施例係參考裝置類型請求項描述。然而,熟習技術者將自上文描述及下文描述暸解,除非另有通知,否則除屬於一種類型之標的之特徵之任何組合之外,亦考量藉由本申請案揭示關於不同標的之特徵之間的任何組合。然而,可組合所有特徵,從而提供超過該等特徵之簡單總和之協同效應。It should be noted that the embodiments of the present invention refer to the description of different subjects. In particular, some embodiments refer to method type request item descriptions, while other embodiments refer to device type request item descriptions. However, those skilled in the art will understand from the above description and the following description that, unless otherwise notified, in addition to any combination of features belonging to one type of target, consideration is also given to revealing the differences between the features of different targets through this application Any combination. However, all features can be combined to provide a synergistic effect that exceeds the simple sum of these features.

雖然已在圖式及前文描述中詳細繪示及描述本發明,但此圖解說明及此描述應被視為闡釋性或例示性而非限制性。本發明不應限於所揭示之實施例。可由熟習技術者在自圖式、揭示內容及附屬發明申請專利範圍之研究實踐一所主張發明時理解及實現對所揭示實施例之其他變動。Although the present invention has been shown and described in detail in the drawings and the foregoing description, this illustration and this description should be regarded as illustrative or exemplary rather than limiting. The invention should not be limited to the disclosed embodiments. Other changes to the disclosed embodiments can be understood and implemented by those skilled in the art when researching a claimed invention from the drawings, the disclosure, and the research practice of the patent scope of the attached invention.

在發明申請專利範圍中,字詞「包括」並不排除其他元件或步驟,且不定冠詞「一」或「一個」並不排除複數個元件或步驟。一單個處理器或其他單元可實現發明申請專利範圍中所敘述之若干項之功能。某些措施在互異之附屬發明申請專利範圍中敘述,但僅就此事實,並不指示此等措施之一組合不能用於獲得好處。發明申請專利範圍中之任何元件符號不應解釋為限制範疇。In the patent application scope of the invention, the word "include" does not exclude other elements or steps, and the indefinite article "a" or "one" does not exclude a plurality of elements or steps. A single processor or other unit can realize several functions described in the patent application scope of the invention. Certain measures are described in the scope of patent applications for mutually exclusive subsidiary inventions, but this fact alone does not indicate that a combination of these measures cannot be used to obtain benefits. Any component symbol in the scope of patent application for invention shall not be interpreted as a restricted category.

10:系統 11:槽 12:流體通道 13:膨脹罐 14:控制單元 15:泵抽構件 16:滿溢出口 17:溫度控制系統 18:成分控制系統 20:基板固持件 21:分配本體 22:陽極 23:入口開口 30:基板 100:裝置 L:製程流體之液位 S1:第一步驟 S2:第二步驟10: System 11: Slot 12: fluid channel 13: Expansion tank 14: control unit 15: Pumping member 16: full overflow 17: Temperature control system 18: Composition control system 20: substrate holder 21: Distribution ontology 22: anode 23: entrance opening 30: substrate 100: device L: process fluid level S1: the first step S2: The second step

下文將參考附圖描述本發明之例示性實施例: 圖1示意性及例示性地展示根據本發明之用於在一製程流體中化學及/或電解表面處理一基板之一裝置之一實施例。 圖2示意性及例示性地展示固持兩個基板之一基板固持件之一實施例。 圖3示意性及例示性地展示根據本發明之用於在一製程流體中化學及/或電解表面處理一基板之一系統之一實施例。 圖4示意性及例示性地展示根據本發明之用於在一製程流體中化學及/或電解表面處理一基板之一系統之一實施例。 圖5展示根據本發明之用於在一製程流體中化學及/或電解表面處理一基板之一方法之一實例之基本步驟。Exemplary embodiments of the present invention will be described below with reference to the drawings: FIG. 1 schematically and exemplarily shows an embodiment of an apparatus for chemically and/or electrolytically treating a substrate in a process fluid according to the present invention. FIG. 2 schematically and exemplarily shows an embodiment of a substrate holding member holding one of two substrates. FIG. 3 schematically and exemplarily shows an embodiment of a system for chemically and/or electrolytically treating a substrate in a process fluid according to the present invention. FIG. 4 schematically and exemplarily shows an embodiment of a system for chemically and/or electrolytically treating a substrate in a process fluid according to the present invention. 5 shows the basic steps of an example of a method for chemically and/or electrolytically treating a substrate in a process fluid according to the present invention.

10:系統 10: System

11:槽 11: Slot

12:流體通道 12: fluid channel

13:膨脹罐 13: Expansion tank

15:泵抽構件 15: Pumping member

16:滿溢出口 16: full overflow

17:溫度控制系統 17: Temperature control system

18:成分控制系統 18: Composition control system

20:基板固持件 20: substrate holder

30:基板 30: substrate

100:裝置 100: device

L:製程流體之液位 L: process fluid level

Claims (15)

一種用於在一製程流體中化學及/或電解表面處理一基板(30)之系統(10),其包括: 一槽(11), 一流體通道(12), 一膨脹罐(13), 一泵抽構件(15),經組態以使該製程流體在該槽(11)與該膨脹罐(13)之間連續循環,及 一控制單元(14), 其中該槽(11)經組態以用於在該製程流體中化學及/或電解表面處理該基板(30), 其中該流體通道(12)連結該槽(11)與該膨脹罐(13), 其中該膨脹罐(13)經組態以保持該製程流體之一膨脹體積,且 其中該控制單元(14)及該流體通道(12)經組態以使該槽(11)中之該製程流體之一液位維持基本上恆定,及 其中該流體通道(12)連結該槽(11)之一滿溢出口(16)與該膨脹罐(13)。A system (10) for chemically and/or electrolytically treating a substrate (30) in a process fluid, including: One slot (11), A fluid channel (12), An expansion tank (13), A pumping member (15) configured to continuously circulate the process fluid between the tank (11) and the expansion tank (13), and A control unit (14), Wherein the tank (11) is configured for chemical and/or electrolytic surface treatment of the substrate (30) in the process fluid, Wherein the fluid channel (12) connects the tank (11) and the expansion tank (13), Wherein the expansion tank (13) is configured to maintain an expansion volume of the process fluid, and Wherein the control unit (14) and the fluid channel (12) are configured to maintain a substantially constant liquid level of the process fluid in the tank (11), and The fluid channel (12) connects a full overflow port (16) of the tank (11) and the expansion tank (13). 如請求項1之系統(10),其中該控制單元(14)經組態以在一基板固持件(20)自該槽(11)移除時使該製程流體之該液位維持基本上恆定。The system (10) of claim 1, wherein the control unit (14) is configured to maintain the liquid level of the process fluid substantially constant when a substrate holder (20) is removed from the tank (11) . 如請求項1之系統(10),其中該泵抽構件(15)經組態以增加一泵抽體積以平衡該基板固持件(20)之該移除。The system (10) of claim 1, wherein the pumping member (15) is configured to increase a pumping volume to balance the removal of the substrate holder (20). 如請求項1之系統(10),其中該流體通道(12)經組態以在該基板固持件(20)插入至該槽(11)中時使該製程流體之該液位維持基本上恆定。The system (10) of claim 1, wherein the fluid channel (12) is configured to maintain the liquid level of the process fluid substantially constant when the substrate holder (20) is inserted into the groove (11) . 如請求項2之系統(10),其中該基板固持件(20)固持該基板(30)。The system (10) of claim 2, wherein the substrate holder (20) holds the substrate (30). 如請求項1之系統(10),其中該控制單元(14)經組態以使該製程流體之該液位維持於高於待配置於該槽(11)中之一分配本體(21)之一最上方部分。The system (10) of claim 1, wherein the control unit (14) is configured to maintain the liquid level of the process fluid above a distribution body (21) to be configured in the tank (11) A topmost part. 如請求項1之系統(10),其中該控制單元(14)經組態以使該製程流體之該液位基本上維持於待配置於該槽(11)中之一分配本體(21)之一最上方部分之一液位。The system (10) of claim 1, wherein the control unit (14) is configured so that the liquid level of the process fluid is substantially maintained at a distribution body (21) to be configured in the tank (11) One of the liquid level in the uppermost part. 如請求項1之系統(10),其進一步包括經組態以偵測該製程流體之一溫度及控制該製程流體之該溫度之一變化之一溫度控制系統(17)。The system (10) of claim 1, further comprising a temperature control system (17) configured to detect a temperature of the process fluid and control a change in the temperature of the process fluid. 如請求項1之系統(10),其進一步包括經組態以偵測該製程流體之一化學性質及控制該製程流體之該化學性質之一變化之一成分控制系統(18)。The system (10) of claim 1, further comprising a composition control system (18) configured to detect a chemical property of the process fluid and control a change in the chemical property of the process fluid. 如請求項1之系統(10),其中該控制單元(14)經組態以防止待配置於該槽(11)中之該分配本體(21)之一乾燥。The system (10) of claim 1, wherein the control unit (14) is configured to prevent one of the distribution bodies (21) to be disposed in the tank (11) from drying. 如請求項1之系統(10),其中該控制單元(14)經組態以防止引入空氣至待配置於該槽(11)中之該分配本體(21)及/或一陽極(22)中。The system (10) of claim 1, wherein the control unit (14) is configured to prevent the introduction of air into the distribution body (21) and/or an anode (22) to be arranged in the tank (11) . 一種用於在一製程流體中化學及/或電解表面處理一基板(30)之裝置(100),其包括: 如前述請求項中一項之一系統(10),及 一基板固持件(20), 其中該基板固持件(20)經組態以固持該基板(30)。A device (100) for chemically and/or electrolytically treating a substrate (30) in a process fluid includes: A system (10) as one of the preceding request items, and A substrate holder (20), The substrate holding member (20) is configured to hold the substrate (30). 一種用於在一製程流體中化學及/或電解表面處理一基板(30)之方法,其包括以下步驟: a)藉由一泵抽構件(15)將該製程流體之一膨脹體積自用於化學及/或電解表面處理該基板(30)之一槽(11)導引至一膨脹罐(13),及 b)將該製程流體之該膨脹體積自該膨脹罐(13)重新插入至該槽(11), 使得該槽(11)中之該製程流體之一液位維持基本上恆定。A method for chemically and/or electrolytically treating a substrate (30) in a process fluid includes the following steps: a) guide an expansion volume of the process fluid from a tank (11) for chemical and/or electrolytic surface treatment of the substrate (30) to an expansion tank (13) by a pumping member (15), and b) The expansion volume of the process fluid is reinserted from the expansion tank (13) to the tank (11), A liquid level of the process fluid in the tank (11) is maintained substantially constant. 如請求項13之方法,其進一步包括以下步驟: 將一基板固持件(20)插入至該槽(11)中,此與步驟a)相關,及 自該槽(11)移除該基板固持件(20),此與步驟b)相關。The method of claim 13 further includes the following steps: Insert a substrate holder (20) into the groove (11), which is related to step a), and The substrate holder (20) is removed from the groove (11), which is related to step b). 如請求項13或14之方法,其中該製程流體係在該槽(11)與該膨脹罐(13)之間連續循環。The method of claim 13 or 14, wherein the process flow system is continuously circulated between the tank (11) and the expansion tank (13).
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