JP2019052370A - System for at least one of chemical and electrolytic surface treatments - Google Patents

Abstract

To provide a system that is improved for at least one of chemical and electrolytic surface treatments of a substrate in a process fluid, making it possible to perform a much better and much more uniform material deposition on the substrate.SOLUTION: A system for chemical and/or electrolytic surface treatments for a substrate in a process fluid comprises a tank 11, a fluid passage 12, an expansion tank 13, and a control unit. The tank 11 is configured for the chemical and/or electrolytic surface treatments for the substrate in the process fluid. The fluid passage 12 connects the tank 11 and the expansion tank 13. The expansion tank 13 is configured so as to hold the expanded volume of the process fluid. The control unit and the fluid passage 12 are configured so as to basically keep the process fluid level in the tank constant; in short, to keep the process solution surface constant by collecting and circulating an overflowing process solution.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a system for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid, a device for surface treatment of at least one of chemical and electrolytic of a substrate in a process fluid, and a substrate in a process fluid The present invention relates to a method for surface treatment of at least one of chemistry and electrolysis.

  In the semiconductor industry, various processes can be used to deposit or remove material on the surface of a wafer.

  For example, to deposit a conductor, such as copper, on a pre-patterned wafer surface to create an interconnect structure for the device, electrochemical deposition (ECD) or electrochemical mechanical deposition (ECMD) ) Process can be used.

  A chemical mechanical polishing (CMP) is often used for the material removal step. Another technique, electropolishing or electroetching, can be used to remove excess material from the surface of the wafer.

  Electrochemical (or electrochemical mechanical) deposition of material on the wafer surface or electrochemical (or electrochemical mechanical) removal of material from the wafer surface is collectively referred to as “electrochemical processing”. Electrochemical, chemical and electrolytic process techniques may include electropolishing (or electrolytic etching), electrochemical mechanical polishing (or electrochemical mechanical etching), electrochemical deposition and electrochemical mechanical deposition. All technologies utilize process fluids.

  Chemical and electrolytic surface treatment techniques involve the following steps. The substrate to be processed is attached to the substrate holder and immersed in the electrolytic process fluid to serve as the cathode. The electrode is immersed in the process fluid and serves as the anode. A direct current is applied to the process fluid to dissociate positively charged metal ions at the anode. The ions then move to the cathode and plate the substrate attached to the cathode.

  One difficulty in such a process is that bubbles may be trapped under the wafer when the wafer is lowered into the process solution. If the process is, for example, a deposition process for copper, such bubbles will prevent copper from depositing on the bubbled areas on the wafer surface and will be unplated or insufficient to show defects in the plating. To produce a plated area. Such defects reduce the reliability of the interconnect structure. Similarly, in the electropolishing process, trapped bubbles delay the removal of material from the bubbled areas, causing inhomogeneities and defects, causing reliability problems.

  In this regard, U.S. Patent No. 6,057,049 discloses a prewetting method and system for preventing bubbles from forming on selected areas of a wafer surface when the surface is contacted with a process solution for an electrochemical process. Disclose. During the process, the wafer surface is first brought close to the surface of the process solution. Next, a flow of process solution is directed toward a selected region of the wafer surface over a predetermined time. In the next step, a selected region of the wafer surface is contacted with the process solution stream for a predetermined time to prevent bubble formation and immerse the wafer surface in the process solution for an electrochemical process.

  However, such a pre-wetting approach is not optimal.

US Patent Application Publication No. 2004/182712

  Therefore, there may be a need to provide an improved system for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid that still allows for better and more uniform material deposition on the substrate.

  The object of the present invention is solved by the subject matter of the independent claims, and further embodiments are limited to the dependent claims. It should be noted that embodiments of the present invention described below are systems for surface treatment of at least one of substrate chemistry and electrolysis in a process fluid, at least one surface of substrate chemistry and electrolysis in a process fluid. It is also applicable to a device for processing and a method for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid.

  In accordance with the present invention, a system for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid is presented.

  The chemical and / or electrolytic surface treatment may be any material deposition, galvanized coating, chemical or electrochemical etching, anodization, metal separation or the like.

  The substrate may comprise a conductive flat plate, a semiconductor substrate, a film substrate, a basically flat metal or metallized workpiece or the like. The surface to be treated may or may not be at least partially masked.

  A system for chemical and electrolytic surface treatment includes a basin, a fluid passage, an expansion tank and a control unit.

  The bath is configured for surface treatment of at least one of substrate chemistry and electrolysis in a process fluid. In other words, the bath is a reservoir in which the substrate is processed, eg, coated. The bath may be a vertical plating chamber into which the substrate can be inserted vertically.

  The fluid passage connects the tank and the expansion tank. The fluid passage may be a connection or a pipe between the tank and the expansion tank.

  The expansion tank is configured to hold an expanded volume of process fluid. The expansion tank may be another reservoir located next to the tank. The expansion tank may have a smaller volume than the tank.

  The control unit may be a processor. The control unit can detect the level of process fluid in at least one of the tank and the expansion tank. The control unit is operable to allow process fluid to enter or exit at least one of the tank and the expansion tank.

  The control unit and fluid passage are configured to keep the level of process fluid in the bath essentially constant. The term “basically constant” may be understood to mean that the height of the liquid process fluid in the vessel remains at the same level regardless of external influences. The term “essentially constant” means as strictly within a range of more or less than 15%, preferably strictly within a range of more or less than 10%, more preferably strictly within a range of more or less than 5%. May be understood. The control unit and fluid passage may be configured to maintain a constant level of process fluid in the vessel. The term “basically constant” may be understood as strictly more or less than less than 5%. The control unit and the fluid passage may be configured to keep the level of process fluid in the bath constant in a strictly constant sense.

  The system for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the present invention is a surface treatment of at least one of chemical and electrolysis, for example a distribution which is to be placed in a bath. Makes it possible to prevent the drying of the parts of the device. Drying can lead to harmful crystallization of process fluid particles. The distribution portion may be a component configured to direct a flow of at least one of process fluid and current to the substrate.

  A system for surface treatment of at least one of chemistry and electrolysis according to the present invention includes at least one of chemistry and electrolysis, for example, a housing including at least one of a distribution part and an anode, and / or an anode and a distribution part. It can further be possible to prevent the introduction of air into the parts of the device for surface treatment. The introduction of air can result in detrimental oxidation of process fluid particles and / or so-called bubble shielding of the substrate.

  As a result, the system for chemical and electrolytic surface treatment according to the present invention provides a uniform liquid flow over the substrate surface, a target distribution of the electric field between the substrate and the counter electrode, and thereby on the substrate. Allows easier and more uniform material deposition.

  In one example, the substrate holder holds the substrate. External effects that may change the level of process fluid in the bath that are prevented here are substrate holders that hold one or two substrates (one substrate on each side of the substrate holder) or the substrate holder alone Can be at least one of charging and unloading. In one example, the control unit is configured to keep the process fluid level essentially constant when the substrate holder is removed from the bath. In one example, the fluid passageway is configured to keep the process fluid level essentially constant when the substrate holder is introduced into the bath. The substrate holder can, for example, displace a volume of 20 liters, while the expansion tank can have a volume of, for example, 30 liters.

  External effects that may change the level of process fluid in the vessel that are prevented here may be evaporation, flushing, spillage, failure or the like of the process fluid.

  In one example, the system further includes pumping means configured to continuously circulate process fluid between the tank and the expansion tank. The pumping means may be a pump. The pumping means may permanently pump the process fluid from the tank to the expansion tank and vice versa.

  In one example, the pumping means is configured to increase the pumping volume to balance the removal of the substrate holder. In other words, when the expansion volume has to be pumped from the tank to the expansion tank, this can be done by increasing the pumping volume per hour, for example by increasing the motor speed. In contrast, the pumping means causes the process fluid to move between the tank and the expansion tank only if the expansion volume must be moved to keep the level of process fluid in the tank essentially constant. May be configured.

  In one example, the fluid passage connects the overflow outlet of the tank with the expansion tank.

  In one example, the control unit is configured to maintain the level of process fluid above the top of the distribution that will be placed in the bath. The distribution portion may be a component configured to direct a flow of at least one of process fluid and current to the substrate. In another example, the control unit is configured to maintain the level of the process fluid essentially at the top level of the distribution that will be placed in the vessel. Both feasibility makes it possible to prevent any damage to the distribution due to drying, introduction of air or the like. In one example, the control unit is configured to prevent drying of the distribution section that will be placed in the bath. In one example, the control unit is configured to prevent introduction of air into the distribution section that will be placed in the bath.

  In one example, the system further includes a temperature control system configured to detect a temperature of the process fluid and control a change in the temperature of the process fluid, for example, by at least one of heating and cooling.

  In one example, the system further includes a composition control system configured to detect a chemical property of the process fluid and control a change in the chemical property of the process fluid. The chemical properties of the process fluid may be composition, pH value, amount of additive or the like. Changes in chemical properties may be made by adding some component.

  In accordance with the present invention, a device for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid is also presented. A device for chemical and electrolytic surface treatment includes a system for chemical and electrolytic surface treatment of a substrate in a process fluid as described above and a substrate holder. The substrate holder is configured to hold a substrate. The substrate holder may be configured to hold one or two substrates (one substrate on each side of the substrate holder).

In accordance with the present invention, a method for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid is also presented. The method for surface treatment of at least one of chemistry and electrolysis is not necessarily in this order, but the following steps:
a) directing the expansion volume of the process fluid from the bath for the chemical and electrolysis surface treatment of the substrate to the expansion tank; and b) the level of the process fluid in the bath is kept essentially constant. And re-introducing the expansion volume of the process fluid from the expansion tank into the tank.

In one example, the method for chemical and electrolytic surface treatment further comprises the following steps:
-Put the substrate holder into the bath in association with step a),
-Remove the substrate holder from the bath in association with step b).

  The substrate holder may hold one or two substrates (one substrate on each side of the substrate holder).

  In one example, process fluid is continuously circulated between the tank and the expansion tank.

  In one example, the method further includes a temperature control method configured to detect a temperature of the process fluid and control a change in the temperature of the process fluid, for example, by at least one of heating and cooling.

  In one example, the method further includes a composition control method configured to detect a chemical property of the process fluid and control a change in the chemical property of the process fluid. The chemical properties of the process fluid may be composition, pH value, amount of additive or the like. Changes in chemical properties may be made by adding some component.

  As a result, the present invention provides a method for realizing a locally defined liquid flow on a substantially planar substrate for the purpose of controllable material transport across the surface, as well as a method according to the present invention structurally. It relates to a device for realizing. At the same time, the present invention provides a targeted electric field distribution on the conductive substrate surface.

  The devices and methods are particularly suitable for processing structured semiconductor substrates, conductor plates and film substrates, but also for processing the entire surface of planar metal and metallized substrates. The device and method may be used in the manufacture of large surface photovoltaic panels or large scale monitor panels for solar power generation according to the present invention.

  The system, device and method for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the independent claims are in particular at least one preferred embodiment as defined and identical to those defined in the dependent claims It will be understood that Furthermore, it will be understood that preferred embodiments of the invention can be any combination of the dependent claims and the respective independent claims.

  These and other aspects of the invention will be apparent from and elucidated with reference to the embodiments described hereinafter.

FIG. 2 schematically and exemplarily shows an embodiment of a device for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the invention. It is a figure showing typically one example of a substrate holder holding two substrates. FIG. 2 schematically and exemplarily illustrates an embodiment of a system for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the present invention. FIG. 2 schematically and exemplarily illustrates an embodiment of a system for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the present invention. FIG. 2 shows the basic steps of an example of a method for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the invention.

  Exemplary embodiments of the invention are described below with reference to the accompanying drawings.

  1, 3 and 4 schematically and exemplarily illustrate one embodiment of a device 100 for chemical and electrolytic surface treatment of a substrate 30 in a process fluid according to the present invention. The device 100 for chemical and electrolytic surface treatment includes a system 10 and a substrate holder 20 for chemical and electrolytic surface treatment of a substrate 30 in a process fluid.

  The substrate holder 20 is shown in FIG. 2 and is configured to hold the substrate 30. Here, the substrate holder 20 holds two substrates, one substrate 30 on each side of the substrate holder 20. The substrate holder 20 may be configured to hold only one substrate that may be processed from one side or both sides.

  A system 10 for chemical and electrolytic surface treatment of a substrate 30 in a process fluid as shown in FIGS. 1, 3 and 4 is a target flow for chemical and electrolytic surface treatment. And generating a current density pattern. The system 10 includes two distributions 21 that are submerged in a process fluid (not shown). Opposing each distribution portion 21 is a substrate 30 attached to the substrate holder 20. The surface of the substrate 30 is wetted by the process fluid. There are two electrodes, here two anodes 22, each located on the opposite side of the distribution 21 from the substrate 30 and also immersed in the process fluid.

  The distribution section 21 has at least one inlet opening 23 for the process fluid and at least one liquid passage ending in the front of the distribution section 21 with an outlet nozzle array (not shown). The pumped process fluid flows through the outlet nozzle in the direction of the substrate 30 at a relatively high rate and performs the desired chemical and / or electrolytic reaction at that location.

  The substrate 30 may be a basically flat workpiece for the manufacture of electrical or electronic components and is mechanically fixed to the substrate holder 20. As the processing medium exits the distribution 21, the surface of the substrate 30 to be processed is immersed in the process fluid. In special cases, the substrate 30 may be a masked or unmasked conductor plate, a semiconductor substrate or a film substrate, or any metal or metallized workpiece having a substantially planar surface. Also good.

  The distribution section may preferably consist of plastic, particularly preferably polypropylene, polyvinyl chloride, polyethylene, acrylic glass or polymethyl methacrylate, polytetrafluoroethylene, or another material that is not degraded by the process solution.

  The anode 22 is in mechanical contact with the distribution portion 21 or is spatially separated from the distribution portion 21 so that a current flow occurs between the substrate 22 functioning as a counter electrode in the process fluid and the anode 22. And it is attached to the back area of distribution part 21. Depending on the surface treatment method used, the anode 22 is made from a material that is insoluble in the process liquid, such as platinum-coated titanium, or in another situation, such as a metal that would otherwise be galvanically separated. It may be.

  FIGS. 3 and 4 schematically and exemplarily illustrate one embodiment of a system 10 for chemical and electrolytic surface treatment of a substrate 30 in a process fluid according to the present invention. A system 10 for chemical and electrolytic surface treatment includes a tank 11, a fluid passage 12, an expansion tank 13 and a control unit 14. The substrate holder 20 having the substrate 30 is arranged in the tank 11 in FIG. 3 and outside the tank 11 in FIG.

  The vessel 11 is configured for surface treatment of at least one of chemical and electrolysis of the substrate 30 in the process fluid to form a reservoir for processing the substrate 30 therein. The tank 11 is a vertical plating chamber into which a substrate 30 (not shown) is vertically placed.

  The fluid passage 12 connects the tank 11 and the expansion tank 13 in the form of a pipe between the tank 11 and the expansion tank 13.

  The expansion tank 13 holds the expansion volume of the process fluid and is arranged next to the tank 11. The expansion tank 13 has a smaller volume than the tank 11.

  The control unit 14 is here a processor. The control unit 14 detects the level of the process fluid in the tank 11 and operates to cause the process fluid to enter or leave at least one of the tank 11 and the expansion tank 13. The control unit 14 can therefore control the pumping means 15.

  The control unit 14 and the fluid passage 12 keep the level of the process fluid in the tank 11 essentially constant. The term “basically constant” may be understood to mean that the height of the liquid process fluid in the vessel 11 remains at the same level regardless of external influences.

  The control unit 14 is used when the substrate holder 20 without or having one or two substrates 30 is removed from the tank 11 (FIG. 4) and when the substrate holder 20 is loaded into the tank 11 (FIG. 3) Maintain the process fluid level essentially constant. The level L of process fluid in the expansion tank 13 is therefore reduced from FIG. 3 to FIG.

  The system 10 further includes pumping means 15 for continuously circulating process fluid between the tank 11 and the expansion tank 13, i.e. from the tank 11 to the expansion tank 13 and vice versa. The pumping means 15 may increase the pumping volume to balance the removal of the substrate holder 20.

  The fluid passage 12 connects the overflow outlet 16 of the tank 11 to the expansion tank 13.

  The control unit 14 maintains the level of the process fluid above the top of the distribution part 21 arranged in the tank 11. The control unit 14 may maintain the level of the process fluid basically at the top level of the distribution part 21 arranged in the vessel 11. Either option can prevent any damage to the distribution 21 due to drying, air introduction or the like. Thereby, the control unit 14 prevents the distribution part 21 in the tank 11 from being dried. Furthermore, the control unit 14 prevents the introduction of air into the distribution part 21.

  The system 10 further includes a temperature control system 17 for detecting the temperature of the process fluid and controlling changes in the temperature of the process fluid, for example, by at least one of heating and cooling.

  The system 10 further includes a composition control system 18 for detecting chemical properties of the process fluid and controlling changes in the chemical properties of the process fluid. The chemical properties of the process fluid may be composition, pH value, amount of additive or the like. Changes in chemical properties may be made by adding some component.

  The system 10 for chemical and electrolytic surface treatment of a substrate 30 in a process fluid according to the present invention can prevent drying of components of the device 100 for chemical and electrolytic surface treatment. To. The system 10 can further enable to prevent introduction of air into the components of the device 100 for chemical and electrolytic surface treatment. As a result, the system 10 for chemical and electrolytic surface treatment according to the present invention provides a uniform liquid flow over the substrate surface, a targeted distribution of the electric field between the substrate 30 and the counter electrode, thereby Allows easier and more uniform material deposition on the substrate 30.

FIG. 5 shows a schematic diagram of method steps for chemical and electrolytic surface treatment of the substrate 30 in a process fluid. A method for surface treatment of at least one of chemical and electrolysis includes the following steps. That is,
-In the first step S1, the expansion volume of the process fluid is led from the tank 11 for the chemical and electrolytic surface treatment of the substrate 30 to the expansion tank 13.

  In the second step S2, the expansion volume of the process fluid is recharged from the expansion tank 13 into the tank 11 so that the level of the process fluid in the tank 11 is kept essentially constant.

  The method for surface treatment of at least one of chemical and electrolysis further includes loading the substrate holder 20 into the bath 11 in association with step S1 and removing the substrate holder 20 from the bath 11 in association with step S2.

  The substrate holder 20 may hold one or two substrates (one substrate 30 on each side of the substrate holder 20 shown in FIG. 2).

  It should be noted that embodiments of the present invention are described with reference to various subject matters. In particular, some embodiments have been described with reference to method claims, whereas other embodiments have been described with reference to apparatus claims. However, from the foregoing and following description, those skilled in the art will be able to make any combination between features on different subjects, in addition to any combination of features belonging to one subject, unless otherwise noted. Is believed to be disclosed by this application. However, all the features can be combined to provide a synergistic effect beyond the mere summation of features.

  While the invention has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary and not restrictive. The invention is not limited to the disclosed embodiments. Those skilled in the art of the claimed invention can understand and produce other variations to the disclosed embodiments from a study of the drawings, the disclosure, and the dependent claims.

  In the claims, the word “comprising” does not exclude other elements or steps, and the indefinite article “a” or “an” does not exclude a plurality. A single processing unit or other unit may fulfill the functions of several configurations recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measured cannot be used to advantage. Any reference signs in the claims should not be construed as limiting the scope.

DESCRIPTION OF SYMBOLS 10 System 11 Tank 12 Fluid passage 13 Expansion tank 15 Pumping means 16 Overflow outlet 17 Temperature control system 18 Composition control system 20 Substrate holder 30 Substrate 100 Device

Claims (17)

A system (10) for chemical and electrolytic surface treatment of a substrate (30) in a process fluid comprising:
A tank (11);
A fluid passageway (12);
An expansion tank (13);
A control unit (14) and
The vessel (11) is configured for at least one surface treatment of the chemical and electrolysis of the substrate (30) in the process fluid,
The fluid passage (12) connects the tank (11) and the expansion tank (13),
The expansion tank (13) is configured to hold an expanded volume of the process fluid;
The control unit (14) and the fluid passage (12) are configured to keep the level of the process fluid in the vessel (11) essentially constant,
System (10).   The system (10) of claim 1, further comprising pumping means (15) configured to continuously circulate the process fluid between the tank (11) and the expansion tank (13).   The control unit (14) is configured to maintain the level of the process fluid essentially constant when the substrate holder (20) is removed from the vessel (11). The system (10) according to any one of the two.   The system (10) according to claims 2 and 3, wherein the pumping means (15) is configured to increase the pumping volume to balance the removal of the substrate holder (20).   The fluid passage (12) is configured to maintain the level of the process fluid essentially constant when the substrate holder (20) is introduced into the bath (11). The system (10) according to any one of claims 1-4.   The system (10) according to any one of the preceding claims, wherein the fluid passage (12) connects the overflow outlet (16) of the tank (11) with the expansion tank (13).   The system (10) according to any one of claims 3 to 6, wherein the substrate holder (20) holds the substrate (30).   The control unit (14) is configured to maintain the level of the process fluid above the top of a distribution section (21) to be disposed in the vessel (11). The system (10) according to any one of -7.   The control unit (14) is configured to maintain the level of the process fluid at a level at the top of the distribution section (21) that will basically be placed in the vessel (11). System (10) according to any one of the preceding claims.   The temperature control system (17) configured to detect a temperature of the process fluid and control a change in the temperature of the process fluid, according to any one of the preceding claims. System (10).   11. A composition control system (18), further comprising a composition control system (18) configured to detect a chemical property of the process fluid and control a change in the chemical property of the process fluid. The system (10) according to one aspect.   12. The control unit (14) according to any one of claims 1 to 11, configured to prevent drying of the distribution part (21) to be arranged in the tank (11). System (10) according to.   The control unit (14) is configured to prevent introduction of air into at least one of the distribution section (21) and the anode (22) to be disposed in the tank (11). A system (10) according to any one of the preceding claims. A device (100) for surface treatment of at least one of chemical and electrolysis of a substrate (30) in a process fluid comprising:
A system (10) according to any one of the preceding claims;
A substrate holder (20),
The substrate holder (20) is configured to hold the substrate (30),
Device (100). A method for surface treatment of at least one of chemical and electrolysis of a substrate (30) in a process fluid comprising:
Directing the expanded volume of the process fluid from a bath (11) for chemical and electrolytic surface treatment of the substrate (30) to an expansion tank (13);
Re-introducing the expansion volume of the process fluid from the expansion tank (13) into the tank (11) so that the level of the process fluid in the tank (11) is maintained essentially constant; And a method comprising: Injecting the substrate holder (20) into the tank (11) in association with step a;
The method according to claim 1, further comprising the step of removing said substrate holder (20) from said vessel (11) in association with step b.   17. A method according to any one of the preceding claims, wherein the process fluid is continuously circulated between the tank (11) and the expansion tank (13).

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