TW202013754A - 半導體裝置封裝件及其使用方法 - Google Patents
半導體裝置封裝件及其使用方法 Download PDFInfo
- Publication number
- TW202013754A TW202013754A TW108118752A TW108118752A TW202013754A TW 202013754 A TW202013754 A TW 202013754A TW 108118752 A TW108118752 A TW 108118752A TW 108118752 A TW108118752 A TW 108118752A TW 202013754 A TW202013754 A TW 202013754A
- Authority
- TW
- Taiwan
- Prior art keywords
- glass substrate
- semiconductor device
- conductive
- optical detector
- optical
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 116
- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 239000011521 glass Substances 0.000 claims abstract description 119
- 230000003287 optical effect Effects 0.000 claims abstract description 104
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 56
- 229910000679 solder Inorganic materials 0.000 claims description 48
- 239000010949 copper Substances 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 238000007789 sealing Methods 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 11
- 230000009471 action Effects 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 2
- 238000007747 plating Methods 0.000 description 33
- 235000012431 wafers Nutrition 0.000 description 20
- 230000008569 process Effects 0.000 description 15
- 230000033001 locomotion Effects 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00317—Packaging optical devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/995,510 | 2018-06-01 | ||
| US15/995,510 US10693020B2 (en) | 2018-06-01 | 2018-06-01 | Semiconductor device package and method for use thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202013754A true TW202013754A (zh) | 2020-04-01 |
Family
ID=68693249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108118752A TW202013754A (zh) | 2018-06-01 | 2019-05-30 | 半導體裝置封裝件及其使用方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10693020B2 (https=) |
| EP (1) | EP3804478A4 (https=) |
| JP (1) | JP2021525956A (https=) |
| TW (1) | TW202013754A (https=) |
| WO (1) | WO2019231919A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113200509B (zh) * | 2021-04-08 | 2024-10-11 | 日月光半导体制造股份有限公司 | 电子元件及半导体封装装置 |
| CN113200510B (zh) * | 2021-04-29 | 2024-10-11 | 日月光半导体制造股份有限公司 | 半导体结构 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6140144A (en) * | 1996-08-08 | 2000-10-31 | Integrated Sensing Systems, Inc. | Method for packaging microsensors |
| EP1041628A3 (en) * | 1999-03-29 | 2008-05-28 | Interuniversitair Microelektronica Centrum Vzw | An image sensor ball grid array package and the fabrication thereof |
| JP4603231B2 (ja) * | 2002-07-19 | 2010-12-22 | パナソニック電工株式会社 | 火災感知器 |
| JP2005045034A (ja) * | 2003-07-22 | 2005-02-17 | Nippon Aleph Corp | フォトインタラプタ用光学装置 |
| CA2468924A1 (en) * | 2004-01-14 | 2005-07-14 | Laser Diagnostic Instruments International Inc. | A device and method for non-contact sensing of low-concentration and trace substances |
| US7442570B2 (en) * | 2005-03-18 | 2008-10-28 | Invensence Inc. | Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom |
| JP2009042469A (ja) * | 2007-08-08 | 2009-02-26 | Sharp Corp | 光モジュール、光モジュールの製造方法、光モジュールを用いて構成された光・電子複合回路、およびその製造方法 |
| US8809923B2 (en) * | 2008-02-06 | 2014-08-19 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor having a carrier substrate and a redistribution layer |
| JP2010021219A (ja) * | 2008-07-09 | 2010-01-28 | Nec Schott Components Corp | パッケージングデバイス装置およびパッケージ用ベース部材 |
| US20100289104A1 (en) * | 2009-05-14 | 2010-11-18 | Optopac Co., Ltd. | Photosensor package |
| KR100976812B1 (ko) * | 2010-02-08 | 2010-08-20 | 옵토팩 주식회사 | 전자 소자 패키지 및 그 제조 방법 |
| KR100976813B1 (ko) * | 2010-04-23 | 2010-08-20 | 옵토팩 주식회사 | 전자 소자 패키지 및 그 제조 방법 |
| US8659148B2 (en) * | 2010-11-30 | 2014-02-25 | General Electric Company | Tileable sensor array |
| US8476087B2 (en) * | 2011-04-21 | 2013-07-02 | Freescale Semiconductor, Inc. | Methods for fabricating sensor device package using a sealing structure |
| US20130050227A1 (en) * | 2011-08-30 | 2013-02-28 | Qualcomm Mems Technologies, Inc. | Glass as a substrate material and a final package for mems and ic devices |
| US8824706B2 (en) * | 2011-08-30 | 2014-09-02 | Qualcomm Mems Technologies, Inc. | Piezoelectric microphone fabricated on glass |
| WO2013062533A1 (en) * | 2011-10-25 | 2013-05-02 | Intel Corporation | Interposer for hermetic sealing of sensor chips and for their integration with integrated circuit chips |
| US9368429B2 (en) * | 2011-10-25 | 2016-06-14 | Intel Corporation | Interposer for hermetic sealing of sensor chips and for their integration with integrated circuit chips |
| JP6027828B2 (ja) * | 2012-09-14 | 2016-11-16 | 国立大学法人東北大学 | 素子の実装方法および光モジュールの製造方法 |
| JP2017022056A (ja) * | 2015-07-14 | 2017-01-26 | 日本放送協会 | 基板処理方法及びパッケージの気密封止方法 |
| JP6246879B1 (ja) * | 2016-09-20 | 2017-12-13 | 株式会社東芝 | 光半導体モジュール及びその製造方法 |
-
2018
- 2018-06-01 US US15/995,510 patent/US10693020B2/en active Active
-
2019
- 2019-05-28 JP JP2020566268A patent/JP2021525956A/ja active Pending
- 2019-05-28 EP EP19811278.1A patent/EP3804478A4/en not_active Withdrawn
- 2019-05-28 WO PCT/US2019/034185 patent/WO2019231919A1/en not_active Ceased
- 2019-05-30 TW TW108118752A patent/TW202013754A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US10693020B2 (en) | 2020-06-23 |
| WO2019231919A8 (en) | 2021-02-11 |
| JP2021525956A (ja) | 2021-09-27 |
| EP3804478A1 (en) | 2021-04-14 |
| WO2019231919A1 (en) | 2019-12-05 |
| EP3804478A4 (en) | 2022-03-09 |
| US20190371944A1 (en) | 2019-12-05 |
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