TW202013635A - 封裝結構 - Google Patents

封裝結構 Download PDF

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TW202013635A
TW202013635A TW108133322A TW108133322A TW202013635A TW 202013635 A TW202013635 A TW 202013635A TW 108133322 A TW108133322 A TW 108133322A TW 108133322 A TW108133322 A TW 108133322A TW 202013635 A TW202013635 A TW 202013635A
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Taiwan
Prior art keywords
intermetallic compound
layer
substrate
bonding
die
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TW108133322A
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English (en)
Inventor
邵棟樑
施玟伶
楊素純
志航 董
余振華
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台灣積體電路製造股份有限公司
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Publication of TW202013635A publication Critical patent/TW202013635A/zh

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Abstract

本發明實施例提供封裝結構及其製造方法。所述封裝結構包含第一內連線結構形成於第一基板之上，且所述第一內連線結構包含第一金屬層。所述封裝結構也包含第二內連線結構形成於第二基板之上。所述封裝結構包含接合結構位於所述第一內連線結構和所述第二內連線結構之間。所述接合結構包含第一金屬間化合物和第二金屬間化合物，所述第一金屬間化合物的一部分從所述第二金屬間化合物的複數個側壁表面突出，且所述第一金屬間化合物和所述第二金屬間化合物之間存在晶界。

Description

封裝結構
本發明實施例係關於封裝結構及其形成方法，且特別是有關於堆疊式封裝結構及其形成方法。
半導體裝置已運用在各種電子應用上，例如個人電腦、手機、數位相機、以及其他的電子設備。半導體裝置的製造通常會依序將材料的各絕緣層或介電層、導電層及半導體層沉積在半導體基板之上，並利用微影製程將各材料層圖案化以形成其上的電路元件和組件。通常在單一半導體晶圓上製造多個積體電路，並沿著切割線（scribe line）在積體電路之間鋸切而將晶片上個別的晶粒單一化。個別的晶粒通常會分別地封裝在例如多晶片模組中或是在其他類型的封裝中。
新的封裝技術已開始發展，例如堆疊式封裝（package on package；PoP），此新的封裝技術將具有一裝置晶粒之頂封裝體接合到具有另一裝置晶粒之底封裝體。藉由採用新的封裝技術，將具有不同或類似功能的各種封裝體整合在一起。
雖然現存的封裝結構及其製造方法通常已能滿足其預期目的，但它們並非在所有方面皆完全令人滿意。
根據本發明實施例中的一實施例，提供一種封裝結構，包含：第一內連線結構，形成於第一基板之上，其中所述第一內連線結構包含第一金屬層；第二內連線結構，形成於所述第二基板之下；以及接合結構，位於所述第一內連線結構和所述第二內連線結構之間，其中所述接合結構包含第一金屬間化合物（intermetallic compound；IMC）和第二金屬間化合物，所述第一金屬間化合物的一部分從所述第二金屬間化合物的複數個側壁表面突出，且所述第一金屬間化合物和所述第二金屬間化合物之間存在晶界（grain boundary）。
根據本發明實施例中的另一實施例，提供一種封裝結構，包含：第一內連線結構，形成於第一基板之上，其中所述第一內連線結構包含第一介電層；第二內連線結構，形成於第二基板之下；以及接合結構，位於所述第一內連線結構和所述第二內連線結構之間，其中所述接合結構內埋於所述第一介電層中，所述接合結構包含第一金屬間化合物和第二金屬間化合物，且所述第一金屬間化合物和所述第二金屬間化合物之間存在晶界。
又根據本發明實施例中的另一實施例，提供一種封裝結構的形成方法，包含：形成第一內連線結構於第一基板之上；形成第一金屬間化合物於所述第一內連線結構之上；形成第二內連線結構於第二基板之上；形成銲層於所述第二內連線結構之上；以及透過將所述第一金屬間化合物接合到所述銲層來接合所述第一基板和所述第二基板以形成第二金屬間化合物，其中所述第一金屬間化合物和所述第二金屬間化合物之間存在晶界。
以下內容提供了許多不同的實施例或範例，用於實施所提供之標的之不同部件。組件和配置的具體範例描述如下，以簡化本發明實施例。當然，這些僅僅是範例，並非用以限定本發明實施例。舉例來說，敘述中若提及第一部件形成於第二部件上或上方，可能包含形成第一和第二部件直接接觸的實施例，也可能包含額外的部件形成於第一和第二部件之間，使得第一和第二部件不直接接觸的實施例。此外，本發明實施例在不同範例中可重複使用參考數字及/或字母，此重複是為了簡化和清楚之目的，並非代表所討論的不同實施例及/或組態之間有特定的關係。
描述了實施例的一些變型。在各種示意圖和說明性實施例中，相同的參照符號用於表示相同的元件。應理解的是，可在所述方法之前、期間和之後進行額外的操作，並且可在所述方法的其他實施例中取代或刪除所述的一些操作。
提供用於封裝結構及其形成方法的實施例。第1A～1I圖根據本發明實施例中的一些實施例顯示形成封裝結構30的各個階段之剖面示意圖。封裝結構30包含首先形成金屬間化合物（intermetallic compound；IMC），然後將金屬間化合物接合到銲層以形成接合結構。金屬間化合物是無氧化物材料，因此具有接合結構的封裝結構是在沒有助熔劑（flux）（用於移除不想要的氧化物）的情況下形成的。
如第1A圖所示，接收第一晶粒10。第一晶粒10包含第一基板102。第一基板102可由矽或其他半導體材料組成。可選地或額外地，第一基板102可包含其他元素半導體材料，例如鍺。在一些實施例中，第一基板102是由化合物半導體組成，例如碳化矽、砷化鎵、砷化銦、或磷化銦。在一些實施例中，第一基板102是由合金半導體組成，例如鍺化矽、矽鍺碳化物（silicon germanium carbide）、鎵砷磷化物（gallium arsenic phosphide）、或鎵銦磷化物（gallium indium phosphide）。在一些實施例中，第一基板102包含磊晶層。舉例而言，第一基板102具有覆蓋塊狀半導體的磊晶層。
形成第一裝置區域103於第一基板102之上。形成於第一裝置區域103中的裝置（未繪示）在產線前段（front end of the line；FEOL）製程中形成於第一基板102之上。所述裝置可包含各種N型金屬氧化物半導體（N-type metal-oxide semiconductor；NMOS）及/或P型金屬氧化物半導體（P-type metal-oxide semiconductor；PMOS）裝置，例如電晶體或記憶體及其類似裝置，它們互相內連線以執行一或多個功能。其他裝置例如電容器、電阻器、二極體、光二極管、保險絲（fuses）及其類似裝置也可以形成於第一基板102上。
形成第一內連線結構150於第一基板102之上。第一內連線結構150包含形成於第一介電層154中的第一金屬層152。此外，在一些實施例中，第一擴散障壁層153圍繞第一金屬層152。
第一金屬層152是由銅、銅合金、鋁、鋁合金或前述之組合組成。第一擴散障壁層153可由氮化矽（SiN）、氮氧化矽（SiON）、氮化鈦（TiN）、氮化鉭（TaN）或氮化鋁（AlN）組成。在一些實施例中，第一金屬層152是由銅所組成，且第一擴散障壁層153是由TaN/Ta雙層所組成。在一些實施例中，在產線後段（back end of the line；BEOL）製程中形成第一內連線結構150。在一些實施例中，第一介電層154是由氧化物組成，例如氧化矽（SiOx）。在一些其他實施例中，第一介電層154是由聚合物組成，例如苯環丁烯（benzocyclobutene；BCB）聚合物、聚醯亞胺（polyimide；PI）或聚苯並噁唑（polybenzoxazole；PBO）。透過沉積製程獨立地形成第一金屬層152、第一擴散障壁層153和第一介電層154，例如化學氣相沉積（chemical vapor deposition；CVD）製程、物理氣相沉積（physical vapor deposition；PVD）製程或其他可應用的製程。
之後，形成第一種子層162於第一內連線結構150之上，並形成光阻（photoresist；PR）層163於第一種子層162之上。第一種子層162是由導電材料組成，例如鈦、銅、錫、鋁、鎳、銀、金或前述之合金。在一些實施例中，透過電鍍製程或其他可應用的製程來形成第一種子層162。
透過圖案化製程將光阻層163圖案化以露出第一種子層162的一部分。圖案化製程包含微影製程和蝕刻製程。微影製程的例子包含軟烘烤（soft baking）、光罩對準、曝光、曝光後烘烤、光阻顯影、沖洗和乾燥（例如硬烘烤）。蝕刻製程可為乾蝕刻或濕蝕刻製程。
接下來，如第1B圖所示，根據本發明實施例中的一些實施例，形成第一障壁層164於第一種子層162之上。第一障壁層164作為屏障以避免第一銲層166（如第1E圖所示）向下擴散。
在一些實施例中，第一障壁層164是由金屬層組成，例如銅、銅合金、鎳、鎳合金、鋁、鋁合金、錫、錫合金、鉛、鉛合金、銀、銀合金或前述之組合。在一些實施例中，第一種子層162是由Ti/Cu所組成，且第一障壁層164是由鎳所組成。在一些其他實施例中，第一障壁層164是由鎳/銅（Ni/Cu）所組成。當第一障壁層164由鎳/銅組成時，因為鎳作為屏障，所以在銅層沉積之前先沉積鎳層。
之後，如第1C圖所示，根據本發明實施例中的一些實施例，形成第一銲層166於第一障壁層164之上。在一些實施例中，第一銲層166是由錫、SnAg、SnPb、SnAgCu、SnAgZn、SnZn、SnBiIn、SnIn、SnAu、SnPb、SnCu、SnZnIn、SnAgSb或其他可應用的材料組成。
第一障壁層164沿著垂直方向具有第一高度H1 。第一銲層166沿著垂直方向具有第二高度H2 。在一些實施例中，第一障壁層164的第一高度H1 與第一銲層166的第二高度H2 的比例（H1 /H2 ）是在約0.3至約0.5的範圍。
應注意的是，應保留第一障壁層164並且應完全消耗第一銲層166，因為第一障壁層164作為屏障以避免第一銲層166擴散到第一導電層（又稱為第一金屬層）152中。因此，第一高度H1 與第二高度H2 的比率落在上述範圍，以避免不想要的化學反應。
隨後，如第1D圖所示，根據本發明實施例中的一些實施例，移除光阻層163以及移除光阻層163底下種子層162的一部分。在一些實施例中，透過蝕刻製程（例如濕蝕刻製程或乾蝕刻製程）移除光阻層163和種子層162的一部分。
第一金屬層152沿著水平方向具有第一寬度W1 ，且第一障壁層164沿著水平方向具有第二寬度W2 。在一些實施例中，第一障壁層164的第二寬度W2 大於第一金屬層152的第一寬度W1 。應注意的是，第一障壁層164比第一金屬層152寬，以有效地避免底下的第一金屬層152（例如銅）在隨後的回焊製程期間擴散。
之後，如第1E圖所示，根據本發明實施例中的一些實施例，對第一銲層166和第一障壁層164進行第一回焊製程以形成第一金屬間化合物170。第一金屬間化合物170具有多個突出結構。在一些實施例中，第一金屬間化合物170具有多個針狀結構。第一金屬間化合物170的頂表面是不平坦的。
第一金屬間化合物170包含來自第一銲層166的材料和其他金屬。在一些實施例中，第一銲層166的材料（例如Sn）和第一障壁層164的材料（例如Ni）遷移並與彼此反應以形成第一金屬間化合物170。在一些其他實施例中，第一銲層166的材料（例如Sn）和第一障壁層164的材料（例如Ni/Cu）遷移並與彼此反應以形成第一金屬間化合物170。
第一金屬間化合物170可被稱為金屬間合金、有序金屬間合金或長程有序（long-range-ordered）合金。第一金屬間化合物170是含有兩種或更多種金屬元素的固態化合物，並顯示出金屬接合和有序晶體結構。在一些實施例中，第一金屬間化合物170包含Ni3 Sn4 、Cu6 Sn5 、(CuNi)6 Sn5 、(CuNi)3 Sn4 、Cu11 (InSn)9 、Ni3 In7 、Ni3 (InSn)7 或其他可應用的材料。
第一回焊製程用於熔化第一銲層166的材料，因此在高於第一銲層166之熔點的溫度下操作第一回焊製程。在一些實施例中，在約200°C至約270°C的溫度範圍操作第一回焊製程。在一些實施例中，在約400秒至約800秒的範圍操作第一回焊製程一段時間。
第一金屬間化合物170沿著水平方向具有第三寬度W3 。在一些實施例中，第一金屬間化合物170的第三寬度W3 大致上等於第一障壁層164的第二寬度W2 。在一些實施例中，第一金屬間化合物170的第三寬度W3 大於第一金屬層152的第一寬度W1 。
接下來，如第1F圖所示，根據本發明實施例中的一些實施例，提供第二晶粒20。第二裝置區域203形成於第二基板202之上。第二晶粒20包含形成於第二基板202之上的第二內連線結構250。第二內連線結構250包含形成在介電層254中的第二金屬層252。此外，在一些實施例中，第二擴散障壁層253圍繞第二金屬層252。
第二金屬層252是由銅、銅合金、鋁、鋁合金或前述之組合組成。擴散障壁層253可由氮化矽、氮氧化矽、氮化鈦、氮化鉭或氮化鋁組成。在一些實施例中，第二金屬層252是由銅所組成，且第二擴散障壁層253是由TaN/Ta雙層所組成。在一些實施例中，在產線後段（BEOL）製程中形成第二內連線結構250。在一些實施例中，介電層254是由例如氧化矽（SiOx）的氧化物組成，或是由例如苯環丁烯（BCB）聚合物、聚醯亞胺（PI）或聚苯並噁唑（PBO）的聚合物組成。透過沉積製程獨立地形成第二金屬層252、第二擴散障壁層253和介電層254，沉積製程例如化學氣相沉積製程、物理氣相沉積製程或其他可應用的製程。
之後，形成第二種子層262於第二內連線結構250之上。接著，形成第二障壁層264於第二種子層262之上，形成第二銲層266於第二障壁層264之上。第二種子層262類似於第一種子層162。第二障壁層264類似於第一障壁層164，而第二銲層266類似於第一銲層166。
在一些其他實施例中，在第一金屬間化合物170上進行清洗製程。清洗製程用於移除第一金屬間化合物170頂表面上不想要的污染。在一些實施例中，清洗製程用於移除第一金屬間化合物170上未反應的銲接材料。在一些實施例中，清洗製程包含酸性溶液，例如鹽酸溶液。在一些實施例中，鹽酸溶液的濃度介於約20 wt%至約40 wt%的範圍。在一些實施例中，在約1分鐘至約10分鐘的範圍操作清洗製程一段時間。
接下來，如第1G圖所示，根據本發明實施例中的一些實施例，透過將第一金屬間化合物170接合到第二銲層266來將第一基板102（或第一晶粒10）接合到第二基板202（或第二晶粒20）。其結果，接合結構370位於第一內連線結構150和第二內連線結構250之間。透過進行第二回焊製程將第一晶粒10接合到第二晶粒20。
第二銲層266沿著水平方向具有第四寬度W4 。在一些實施例中，第二銲層266的第四寬度W4 小於第一金屬間化合物170的第三寬度W3 。
接下來，如第1H圖所示，根據本發明實施例中的一些實施例，在第二回焊製程期間形成第二金屬間化合物270。第二金屬間化合物270包含來自第二銲層266和第二障壁層264的材料。在一些實施例中，第二金屬間化合物270是由Ni3 Sn4 、Cu6 Sn5 、(CuNi)6 Sn5 、(CuNi)3 Sn4 、Cu11 (InSn)9 、Ni3 In7 、Ni3 (InSn)7 或其他可應用的材料組成。在回焊製程期間，未反應的第二銲層266保留在第一金屬間化合物170和第二金屬間化合物270之間。在一些實施例中，在介於約200°C至約270°C的溫度範圍操作第二回焊製程。在一些實施例中，在約60秒至約120秒的範圍操作第二回焊製程一段時間。
接下來，如第1I圖所示，根據本發明實施例中的一些實施例，隨著回焊製程的操作時間逐漸增加，第二金屬間化合物270的量也逐漸增加。在一些實施例中，第二銲層266未完全反應，因此未反應的第二銲層266留在接合結構370中。剩餘的第二銲層266在第一金屬間化合物170和第二金屬間化合物270之間可具有不規則形狀。第二金屬間化合物270的一部分底表面直接接觸第一金屬間化合物170的一部分頂表面。第一金屬間化合物170的形狀與第二金屬間化合物270的形狀不對稱。
在一些實施例中，第一金屬間化合物170和第二金屬間化合物270是由相同的材料組成，例如Ni3 Sn4 。在一些其他實施例中，第一金屬間化合物170和第二金屬間化合物270是由不同的材料組成。舉例而言，第一金屬間化合物170是由Ni3 Sn4 組成，而第二金屬間化合物270是由(CuNi)6 Sn5 組成。
首先形成第一金屬間化合物170，接著第二金屬間化合物270在回焊製程期間逐漸朝向第一金屬間化合物170擴展。由於第一金屬間化合物170和第二金屬間化合物270不是同時形成的，晶界可以是不規則的。第一金屬間化合物170和第二金屬間化合物270具有不同的晶粒尺寸。在一些實施例中，在第一金屬間化合物170和第二金屬間化合物270之間發生部分的晶粒衝擊（grain impingement），但在第一金屬間化合物170和第二金屬間化合物270之間仍存在明顯的晶界。可使用偏光顯微鏡（optical microscope；OM）或掃描式電子顯微鏡（scanning electron microscope；SEM）觀察第一金屬間化合物170和第二金屬間化合物270之間的晶界。晶界是第一金屬間化合物170的第一晶粒和第二金屬間化合物270的第二晶粒之間的界面。
應注意的是，第一金屬間化合物170在回焊製程之前具有穩定的結構，因此第一金屬間化合物170在回焊製程之後不會明顯地移動或改變其形狀。回焊製程之前的第一金屬間化合物170的晶粒尺寸大致上等於回焊製程之後的第一金屬間化合物170的晶粒尺寸。
如上所述，第二銲層266的第四寬度W4 小於第一金屬間化合物170的第三寬度W3 。當形成第二金屬間化合物270時，第二金屬間化合物270的第五寬度W5 仍然小於第一金屬間化合物170的第三寬度W3 。因此，第一金屬間化合物170的一部分從第二金屬間化合物270的複數個側壁表面突出。
應注意的是，相較於其他金屬材料（例如銅），第一金屬間化合物170不易被氧化，因此第一金屬間化合物170提供新鮮且乾淨的接合頂表面。在一些實施例中，在回焊製程期間，第一金屬間化合物170在操作溫度（例如200°C至約270°C）下不被氧化。由於沒有氧化物形成於第一金屬間化合物170上，第二銲層266在未使用助銲劑的情況下直接接合到第一金屬間化合物170的頂表面。
此外，第一金屬間化合物170具有多個直接接觸第二銲層266的突出結構。相較於第一金屬間化合物170，第二銲層266相對較軟。因此，當第一金屬間化合物170直接接觸第二銲層266時，形成於第二銲層266表面之上的氧化物可被第一金屬間化合物170的突出結構破壞。產生第二銲層266的新鮮表面以直接接觸第一金屬間化合物170。因此，第一金屬間化合物170和第二銲層266之間的接觸力下降。
隨著兩個相鄰接合結構370之間的間距逐漸縮小，所述無助銲劑接合製程可避免不想要的問題產生。在半導體接觸技術中使用助銲劑具有多個缺點。助銲劑的材料通常具有腐蝕性。助銲劑可能難以移除且留下的任何殘留物都可能會產生短路的問題。因此，實施例提供了用於形成封裝結構30的無銲劑方法，並改善了接合品質和接合產量。
應注意的是，相較於銅-銅接合，在相對較低的溫度下操作第二銲層266和第一金屬間化合物170的接合。因此，接合製程具有低的熱預算（熱預算被定義為工件可被加熱而沒有損壞的極限）。
第1I’圖根據本發明實施例中的一些實施例顯示第一晶粒10和第二晶粒20之間的接合結構370之剖面示意圖。接合結構370包含第一金屬間化合物170和第二金屬間化合物270。第一金屬間化合物170的外側壁表面不與第二金屬間化合物270的外側壁表面對齊。第一金屬間化合物170的外側壁表面超過第二金屬間化合物270的外側壁表面。第一金屬間化合物170的一部分從第二金屬間化合物270的複數個側壁表面突出。
在一些實施例中，第二銲層266被完全消耗，因此第二金屬間化合物270的整個底表面大致上接觸第一金屬間化合物170的頂表面。晶界371位於第一金屬間化合物170和第二金屬間化合物270之間。第一金屬間化合物170和第二金屬間化合物270具有不同的晶粒尺寸。
第2A～2H圖根據本發明實施例中的一些實施例顯示形成封裝結構30的各個階段之剖面示意圖。
如第2A圖所示，形成第一裝置區域103於第一基板102之上，並形成第一內連線結構150於第一基板102之上。第一內連線結構150包含第一介電層154、第二介電層156和第一金屬層152。將第二介電層156圖案化以形成凹槽157以露出第一金屬層152的頂表面。
接下來，如第2B圖所示，根據本發明實施例中的一些實施例，依序形成第一種子層162和第一障壁層164於凹槽157中。共形地（conformally）形成第一種子層162和第一障壁層164於第二介電層156上和第一金屬層152的頂表面上。在一些其他實施例中，第一種子層162是由Ti/Cu組成，而第一障壁層164是由Ni組成。在一些其他實施例中，第一種子層162是由Ti/Cu組成，而第一障壁層164是由Ni/Cu組成。在一些實施例中，依序形成鈦層、第一銅層、鎳層和第二銅層於第一金屬層152之上。
接下來，如第2C圖所示，根據本發明實施例中的一些實施例，形成第一銲層166於第一障壁層164之上。第一銲層166可由錫、SnAg、SnPb、SnAgCu、SnAgZn、SnZn、SnBiIn、SnIn、SnAu、SnPb、SnCu、SnZnIn、SnAgSb或其他可應用的材料組成。
之後，如第2D圖所示，根據本發明實施例中的一些實施例，在第一銲層166和第一障壁層164上進行回焊製程以形成第一金屬間化合物170。第一金屬間化合物170具有多個突出結構。第一金屬間化合物170的頂表面是不平坦的。在一些實施例中，可透過例如透過化學機械研磨（chemical mechanical polishing；CMP）的平坦化製程來研磨金屬間化合物170和第一障壁層164以及位於第二介電質（又稱為第二介電層）156上的第一種子層162。
第一金屬間化合物170包含來自第一銲層166和第一障壁層164的材料。在一些實施例中，第一金屬間化合物170包含Ni3 Sn4 、Cu6 Sn5 、(CuNi)6 Sn5 、(CuNi)3 Sn4 、Cu11 (InSn)9 、Ni3 In7 、Ni3 (InSn)7 或其他可應用的材料。
之後，如第2E圖所示，根據本發明實施例中的一些實施例，提供第二晶粒20。第二晶粒20包含第二基板202。第二裝置區域203形成於第二基板202之上，且第二內連線結構250形成於第二基板202之上。第二種子層262形成於介電層254之上，第二障壁層264和第二銲層266依序形成於第二種子層262之上。第二銲層266與凹槽157對齊。
接下來，如第2F圖所示，根據本發明實施例中的一些實施例，透過將第二介電層156接合到介電層254，將第一晶粒10接合到第二晶粒20。將第二介電層156接合到介電層254以形成介電-介電接合部分。
在一些實施例中，透過第一回焊製程50進行第二介電層156和介電層254的接合。在一些實施例中，在不施加額外壓力的情況下操作第二介電層156與介電層（又稱為第一介電層）154的接合。第一回焊製程50可包含第一加熱步驟和第二加熱步驟。在一些實施例中，第一加熱步驟是在約150°C至約200°C的溫度範圍進行操作。在一些實施例中，在約30分鐘至約60分鐘的範圍操作第一加熱步驟一段時間。在一些實施例中，第二加熱步驟是快速熱退火（rapid thermal anneal；RTA）步驟，且在約230°C至約300°C的溫度範圍操作第二加熱步驟。在一些實施例中，在約1分鐘至約10分鐘的範圍操作第二加熱步驟一段時間。第二加熱步驟的操作溫度高於第一加熱步驟的操作溫度，因此第二加熱步驟的操作時間短於第一加熱步驟的操作時間。
接下來，如第2G圖所示，根據本發明實施例中的一些實施例，透過在第二銲層266和第二障壁層264上進行第二回焊製程60來形成第二金屬間化合物270。在第二回焊製程期間，第二銲層266逐漸減小，且第二金屬間化合物270逐漸向第一金屬間化合物170擴展。第二銲層266的一部分未與第二障壁層264完全反應，且第二銲層266的一部分留在第一金屬間化合物170和第二金屬間化合物270之間。另外，氣隙（air gap）273位於第一金屬間化合物170和第二金屬間化合物270之間。
在一些實施例中，在約150°C至約270°C的溫度範圍操作第二回焊製程60。在一些實施例中，在約400秒至約800秒的範圍操作第二回焊製程60一段時間。
如第2G圖所示，接合結構370是混合（hybrid）接合結構，其包含導電接合部分和介電接合部分。導電接合部分包含第二金屬間化合物270和第一金屬間化合物170，而介電接合部分包含第二介電層156和介電層254。
應注意的是，相較於銅-銅接合，在相對較低的溫度下操作第二介電層156和介電層154的接合以及第二銲層266和第一金屬間化合物170的接合。因此，接合製程具有低的熱預算。
接下來，如第2H圖所示，根據本發明實施例中的一些實施例，以接合結構370填充凹槽157。第二銲層266被完全消耗，因此接合結構370中沒有銲接材料。第一金屬間化合物170和第二金屬間化合物270之間的晶界371是不規則的。第二金屬間化合物270的複數個側壁表面和整個底表面與第一金屬間化合物170直接接觸。
第2H’圖根據本發明實施例中的一些實施例顯示第一晶粒10和第二晶粒20之間的接合結構370之剖面示意圖。接合結構370主要包含第一金屬間化合物170和第二金屬間化合物270。氣隙273位於接合結構370和第二介電層156之間。
第3A～3E圖根據本發明實施例中的一些實施例顯示形成封裝結構40的各個階段之剖面示意圖。
如第3A圖所示，提供第一晶粒10和第二晶粒20。形成複數個矽穿孔（through-substrate-via；TSV）結構120於第一基板102中。每一個矽穿孔結構120包含導電結構116和圍繞導電結構116的障壁層118。導電結構116從第一基板102的第一表面102a朝向第一基板102的第二表面102b延伸。第一內連線結構150形成於第一基板102之上。第一內連線結構150包含形成於第一介電層154中的第一金屬層152和第一擴散障壁層153。此外，第一內連線結構150包含多個導電層158。第一金屬層152透過導電層158電性連接到矽穿孔結構120。
形成第一種子層162和第一障壁層164於第一內連線結構150之上，並形成第一金屬間化合物170於第一障壁層164之上。在一些實施例中，第一金屬間化合物170是由Ni3 Sn4 、Cu6 Sn5 、(CuNi)6 Sn5 、(CuNi)3 Sn4 或其他可應用的材料組成。在一些實施例中，第一金屬間化合物170具有多個突出部分。
第二晶粒20包含位於第二基板202之上的第二層間介電層206和位於第二層間介電層206中的裝置元件204。在一些實施例中，第二基板202是從晶圓鋸切而成的積體電路（integrated circuit；IC）晶粒，並且可為「已知的良好晶粒」。在一些實施例中，積體電路晶粒是邏輯晶粒、記憶體晶粒或其他可應用類型的晶粒。
裝置元件204包含電晶體（例如金屬氧化物半導體場效電晶體（metal oxide semiconductor field effect transistors；MOSFET）、互補式金屬氧化物半導體（complementary metal oxide semiconductor；CMOS）電晶體、雙極型接面電晶體（bipolar junction transistors；BJT）、高壓電晶體、高頻電晶體、p型通道及/或n型通道場效電晶體（PFET/NFET）等）、二極體及/或其他可應用的元件。進行各種製程以形成裝置元件204，例如沉積、蝕刻、佈植（implantation）、微影、退火及/或其他可應用的製程。在一些實施例中，在產線前段（FEOL）製程中形成裝置元件204於第二基板202中。
第二內連線結構250形成於層間介電層（又稱為第二層間介電層）206之上。第二內連線結構250包含形成於介電層254中的第二金屬層252和第二擴散障壁層253。第二種子層262形成於第二內連線結構250之上，且第二障壁層264形成於第二種子層262之上。銲層（又稱為第二銲層）266形成於第二障壁層264之上。
接下來，如第3B圖所示，根據本發明實施例中的一些實施例，將第二晶粒20上下翻轉並放置在第一晶粒10之上。之後，在第一金屬間化合物170和第二銲層266上進行回焊製程以形成封裝結構30。
第二晶粒20的第二銲層266大致上對準第一晶粒10的第一金屬間化合物170。隨後，在回焊製程期間，第二銲層266和第一金屬間化合物170熔化並再成形以形成第二金屬間化合物270。接合結構370是由第一金屬間化合物170和第二金屬間化合物270形成。第一金屬間化合物170位於第二金屬間化合物270和第一障壁層164之間，且第二金屬間化合物270位於第一金屬間化合物170和第二障壁層264之間。不規則晶界位於第一金屬間化合物170和第二金屬間化合物270之間。
之後，形成底部填充層380於第一晶粒10和第二晶粒20之間。將第一金屬間化合物170和第二金屬間化合物270內埋於底部填充層380中並由底部填充層380保護。在一些實施例中，底部填充層380包含液態環氧樹脂、可變形凝膠、矽橡膠、其他合適的材料或前述之組合。在一些實施例中，底部填充層380包含其中分散有填料的環氧基樹脂。填料可包含絕緣纖維、絕緣顆粒、其他合適的元素或前述之組合。在一些實施例中，進行分配製程（dispensing process）以形成底部填充層380。
之後，如第3C圖所示，根據本發明實施例中的一些實施例，將接合在一起的第一晶粒10和第二晶粒20上下翻轉並放置在載體基板390之上。
在一些實施例中，載體基板390作為臨時基板。臨時基板在後續處理步驟期間提供機械性和結構性支持，例如將在下文更詳細描述的那些。載體基板390是由半導體材料、陶瓷材料、聚合物材料、金屬材料、其他合適的材料或前述之組合組成。在一些實施例中，載體基板390為玻璃基板。在一些其他實施例中，載體基板390為半導體基板，例如矽晶圓。
在一些實施例中，透過黏著層（未繪示）將第一晶粒10附接到載體基板390。黏著層作為臨時黏著層。黏著層可為膠水或膠帶。在一些實施例中，黏著層是感光的且可以透過光照射輕易地從載體基板390分離。舉例而言，使用紫外光或雷射光照射載體基板390以分離黏著層。在一些實施例中，黏著層是光熱轉換（light-to-heat-conversion；LTHC）塗料。在一些其他實施例中，黏著層是熱敏的且當其暴露於熱時可輕易地從載體基板390分離。
接下來，使用載體基板390做為支持體（support）來薄化第一晶粒10的第一基板102。在一些實施例中，第一基板102從第二表面102b變薄，直到暴露出矽穿孔結構120。在一些實施例中，透過平坦化製程來薄化第一基板102。平坦化製程可包含化學機械研磨製程、研磨（grinding）製程、蝕刻製程、其他可應用的製程或前述之組合。
之後，如第3D圖所示，形成鈍化層180於第一基板102之上，並且將鈍化層180圖案化以形成複數個開口。開口暴露出矽穿孔結構120的部分導電結構118。鈍化層180是由介電材料組成，並為後續接合製程期間引起的接合應力提供應力消除（stress relief）。在一些實施例中，鈍化層180是由聚苯並噁唑（PBO）、苯環丁烯（BCB）、聚矽氧（silicone）、丙烯酸酯（acrylates）、矽氧烷（siloxane）、其他合適的材料或前述之組合組成。在一些其他實施例中，鈍化層180是由非有機材料組成。非有機材料包含氧化矽、未經摻雜的矽酸鹽玻璃、氮氧化矽、防銲材料（SR）、氮化矽、碳化矽、六甲基二矽烷（HMDS）、其他合適的材料或前述之組合。
接下來，形成複數個底部填充材料層182於開口中以及形成複數個連接器186於底部填充材料層182之上。連接器186形成於鈍化層180之上。連接器186電性連接到矽穿孔結構120。在一些實施例中，連接器186被稱為控制塌陷晶片連接（controlled collapse chip connection；C4）凸塊或微凸塊。
之後，如第3E圖所示，根據本發明實施例中的一些實施例，移除載體基板390，並透過連接器186將封裝結構30接合到第三基板400。在一些實施例中，提供合適的光以分離黏著層並從載體基板390剝離（lift off）。
在一些實施例中，第三基板400為印刷電路板（printed circuit board；PCB）、陶瓷基板或其他合適的封裝基板。接下來，在封裝結構30和第三基板400上進行回焊製程以形成封裝結構40。
如第3E圖所示之接合結構307，隨著兩個相鄰的第一金屬間化合物170之間的間距逐漸減小，接合品質變得更加重要。此實施例提供了不使用助銲劑的接合製程，因此改善了封裝結構與接合結構的接合品質。
第4A～4B圖根據本發明實施例中的一些實施例顯示形成封裝結構30的各個階段之剖面示意圖。
如第4A圖所示，提供第一晶粒10和第二晶粒20。第一晶粒10包含形成於第一基板202之上的第一層間介電層106。形成複數個裝置區域103於層間介電層（又稱為第一層間介電層）106中。每一個裝置區域103包含第一閘極介電層104和位於第一閘極介電層104上的第一閘極電極層112。形成第一源極/汲極結構108和第一隔離結構110於第一基板102中，所述第一隔離結構110例如為淺溝槽隔離（shallow trench isolation；STI）結構。
第一接觸導孔（contact via）114形成於第一裝置區域103之上並電性連接到第一內連線結構150。第一內連線結構150形成於層間介電層106之上。凹槽157形成於內連線結構（又稱為第一內連線結構）150之上。第一種子層162和第一障壁層164依序形成於凹槽157中，且第一金屬間化合物170形成於第一障壁層164之上。
第二晶粒20包含形成於第二基板202之上的第二層間介電層206。形成複數個裝置區域203於第二層間介電層206中。每一個裝置區域203包含第二閘極介電層212和第二閘極電極層216。形成第二源極/汲極結構208和第二隔離結構210於第二基板202中。
第二接觸導孔214形成於第二裝置區域203之上並電性連接到第二內連線結構250。第二內連線結構250形成於層間介電層106之上。第二種子層262形成於第二內連線結構250之上，且第二障壁層264形成於第二種子層262之上。第二銲層266形成於第二障壁層264之上。
接下來，如第4B圖所示，根據本發明實施例中的一些實施例，透過將介電層154接合到介電層254以及將第一金屬間化合物170接合到第二銲層266來將第一晶粒10接合到第二晶粒20。其結果，形成接合結構370且所述接合結構370包含介電質-介電質-接合部分（dielectric-to-dielectric bonding portion）和導電-導電接合部分（conductive-to conductive bonding portion）。介電質-介電質接合部分是由介電層154與介電層254形成，而導電-導電接合部分是由第一金屬間化合物170和第二金屬間化合物270形成。
第5圖根據本發明實施例中的一些實施例顯示封裝結構30’的剖面示意圖。封裝結構30’類似於封裝結構30，第5圖和第4B圖之間的區別在於矽穿孔結構330形成於第5圖中的第二基板202中。
如第5圖所示，矽穿孔結構330穿過第二基板202而形成。矽穿孔結構330電性連接到第二內連線結構250。在一些實施例中，矽穿孔結構330包含襯層（liner）332、擴散障壁層334和導孔材料336。
導孔338和襯墊（pad）340形成於矽穿孔結構330之上。凸塊下金屬（under bump metallization；UBM）層342形成於襯墊340之上。導電結構344形成於凸塊下金屬層342之上。
應注意的是，第一金屬間化合物170不易被氧化且提供乾淨的接合表面。因此，在不使用助銲劑的情況下提供了接合結構30。此外，在回焊製程期間，第一金屬間化合物170具有多個突出結構直接接觸具有柔軟表面的第二銲層266。形成於第二銲層266表面之上的氧化物可被第一金屬間化合物170的突出結構破壞。因此，產生了第二銲層266的新鮮表面。此外，相較於銅-銅接合，在相對較低的溫度下操作用於接合第二銲層266和第一金屬間化合物170的回焊製程，而且接合製程具有低的熱預算。因此，改善了封裝結構30和40的接合品質和接合產量。
在一些實施例中，如第1A～1I圖、第1I’圖和第3A～3E圖所示，首先形成第一金屬間化合物170於第一基板102之上，然後將第一金屬間化合物170接合到第二銲層266以形成接合結構370。接合結構370包含第一金屬間化合物170和第二金屬間化合物270，且不規則晶界位於第一金屬間化合物170和第二金屬間化合物270之間。
在一些實施例中，如第2A～2H圖、第2H’圖、第4A～4B圖和第5圖所示，接合結構370是混合接合結構，其包含介電質-介電質接合部分和導電-導電接合部分。導電-導電性接合部分包含第二金屬間化合物270和第一金屬間化合物170，而介電質-介電質接合部分包含第二介電層156和介電層254。晶界位於第一金屬間化合物170和第二金屬間化合物270之間。
提供了用於形成封裝結構的實施例及所述封裝結構的形成方法。封裝結構包含接合到第二晶粒的第一晶粒。首先形成第一金屬間化合物於第一晶粒之上，並形成第二銲層於第二晶粒之上。透過接合第一金屬間化合物和第二銲層以將第一晶粒接合到第二晶粒來形成接合結構。所述接合結構包含第一金屬間化合物和第二金屬間化合物，且第一金屬間化合物和第二金屬間化合物之間存在晶界並具有部分的晶粒衝擊。第一金屬間化合物不含氧化物，因此在不使用助銲劑的情況下形成了封裝結構。此外，在相對較低的溫度下操作接合製程，所以接合製程具有低的熱預算。因此，改善了封裝結構的接合品質和接合產量。
在一些實施例中，提供一種封裝結構。所述封裝結構包含形成於第一基板之上的第一內連線結構，且所述第一內連線結構包含第一金屬層。所述封裝結構更包含形成於第二基板之下的第二內連線結構。所述封裝結構包含位於第一內連線結構和第二內連線結構之間的接合結構。所述接合結構包含第一金屬間化合物和第二金屬間化合物，第一金屬間化合物的一部分從所述第二金屬間化合物的複數個側壁表面突出，且所述第一金屬間化合物和所述第二金屬間化合物之間存在晶界。
在一些實施例中，所述封裝結構更包含位於所述第一金屬層之上的第一種子層以及位於所述第一種子層之上的第一障壁層，其中所述第一障壁層位於所述第一種子層和所述第一金屬間化合物之間。在一些實施例中，所述第一金屬層具有第一寬度，所述第一金屬間化合物具有第二寬度，且所述第二寬度大於所述第一寬度。所述封裝結構更包含穿過所述第一基板而形成的矽穿孔結構，其中所述矽穿孔結構電性連接到所述第一內連線結構。在一些實施例中，所述第一金屬間化合物和所述第二金屬間化合物具有不同的晶粒尺寸。
在一些實施例中，提供一種封裝結構。所述封裝結構包含形成於第一基板之上的第一內連線結構，且所述第一內連線結構包含第一介電層。所述封裝結構包含形成於第二基板之下的第二內連線結構。所述封裝結構更包含位於所述第一內連線結構和所述第二內連線結構之間的接合結構。所述接合結構內埋於所述第一介電層中，所述接合結構包含第一金屬間化合物和第二金屬間化合物，且所述第一金屬間化合物和所述第二金屬間化合物之間存在晶界。
在一些實施例中，所述第二內連線結構包含第二介電層，且所述接合結構更包含介電接合部分，所述介電接合部分是由所述第一介電層和所述第二介電層形成。在一些實施例中，所述第一金屬間化合物具有複數個突出結構。在一些實施例中，所述第二金屬間化合物的複數個側壁表面和底表面直接接觸所述第一金屬間化合物。在一些實施例中，所述封裝結構更包含位於所述第一介電層和所述接合結構之間的氣隙。在一些實施例中，所述封裝結構更包含形成於所述第一介電層中的第一種子層以及形成於所述第一種子層之上的第一障壁層，其中所述第一障壁層位於所述第一種子層和所述第一種金屬間化合物之間。在一些實施例中，所述第一金屬間化合物和所述第二金屬間化合物具有不同的晶粒尺寸。在一些實施例中，所述封裝結構更包含位於所述第一金屬間化合物和所述第二金屬間化合物之間的銲接材料。在一些實施例中，所述封裝結構更包含穿過所述第二基板而形成的矽穿孔結構，其中所述矽穿孔結構電性連接到所述第二內連線結構。
在一些實施例中，提供一種封裝結構的形成方法。所述方法包含形成第一內連線結構於第一基板之上並形成第一金屬間化合物於所述第一內連線結構之上。所述方法也包含形成第二內連線結構於第二基板之上，以及形成銲層於所述第二內連線結構之上。所述方法包含透過將所述第一金屬間化合物接合到所述銲層來接合第一基板和第二基板以形成第二金屬間化合物。所述第一金屬間化合物和所述第二金屬間化合物之間存在晶界。
在一些實施例中，所述封裝結構的形成方法更包含：形成凹槽於所述第一內連線結構中；形成第一種子層於所述凹槽中；形成第一障壁層於所述第一種子層之上；形成第一銲層於所述第一障壁層之上；以及在所述第一銲層上進行回焊製程以在所述凹槽中形成第一金屬間化合物。在一些實施例中，所述封裝結構的形成方法更包含在將所述第一金屬間化合物接合到所述銲層之前，將所述第一內連線結構的第一介電層接合到所述第二內連線結構的第二介電層。在一些實施例中，所述封裝結構的形成方法更包含在將所述第一金屬間化合物接合到所述銲層之前，在所述第一金屬間化合物上進行清洗製程。在一些實施例中，透過進行回焊製程來進行所述第一基板和所述第二基板的接合。在一些實施例中，所述封裝結構的形成方法更包含穿過所述第一基板形成矽穿孔結構，其中所述矽穿孔結構電性連接到所述第一內連線結構。
以上概述數個實施例之部件，使得在本發明所屬技術領域中具有通常知識者可以更加理解本發明實施例的面向。在本發明所屬技術領域中具有通常知識者應該理解，他們能以本發明實施例為基礎，設計或修改其他製程和結構，以達到與在此介紹的實施例相同之目的及/或優勢。本發明所屬技術領域中具有通常知識者也應該理解到，此類等效的結構並未悖離本發明的精神與範圍，且他們能在不違背本發明之精神和範圍下，做各式各樣的改變、取代和替換。
10:第一晶粒 20:第二晶粒 30、30’、40:封裝結構 50:第一回焊製程 60:第二回焊製程 102:第一基板 102a:第一表面 102b:第二表面 103、203:裝置區域 104:第一閘極介電層 106:第一層間介電層 108:第一源極/汲極結構 110:第一隔離結構 112:第一閘極電極層 114:第一接觸導孔 116:導電結構 118:障壁層 120、330:矽穿孔結構 150:第一內連線結構 152:第一金屬層 153:第一擴散障壁層 154:第一介電層 156:第二介電層 157:凹槽 158:導電層 162:第一種子層 163:光阻層 164:第一障壁層 166:第一銲層 170:第一金屬間化合物 180:鈍化層 182:底部填充材料層 186:連接器 202:第二基板 204:裝置元件 206:第二層間介電層 208:第二源極/汲極結構 210:第二隔離結構 212:第二閘極介電層 214:第二接觸導孔 216:第二閘極電極層 250:第二內連線結構 252:第二金屬層 253:第二擴散障壁層 254:介電層 262:第二種子層 264:第二障壁層 266:第二銲層 270:第二金屬間化合物 273:氣隙 332:襯層 334:擴散障壁層 336:導孔材料 338:導孔 340:襯墊 342:凸塊下金屬層 344:導電結構 370:接合結構 371:晶界 380:底部填充層 390:載體基板 400:第三基板 W1、W2、W3、W4、W5:寬度
藉由以下的詳細描述配合所附圖式，可以更加理解本發明實施例的內容。需強調的是，根據產業上的標準慣例，許多部件（feature）並未按照比例繪製。事實上，為了能清楚地討論，各種部件的尺寸可能被任意地增加或減少。 第1A～1I圖根據本發明實施例中的一些實施例顯示形成封裝結構的各個階段之剖面示意圖。 第1I’圖根據本發明實施例中的一些實施例顯示第一晶粒和第二晶粒之間的接合結構之剖面示意圖。 第2A～2H圖根據本發明實施例中的一些實施例顯示形成封裝結構的各個階段之剖面示意圖。 第2H’圖根據本發明實施例中的一些實施例顯示第一晶粒和第二晶粒之間的接合結構之剖面示意圖。 第3A～3E圖是根據本發明實施例中的一些實施例顯示形成封裝結構的各個階段之剖面示意圖。 第4A～4B圖是根據本發明實施例中的一些實施例顯示形成封裝結構的各個階段之剖面示意圖。 第5圖是根據本發明實施例中的一些實施例顯示封裝結構的剖面示意圖。
10:第一晶粒
20:第二晶粒
30:封裝結構
102:第一基板
103:裝置區域
150:第一內連線結構
152:第一金屬層
153:第一擴散障壁層
154:第一介電層
162:第一種子層
164:第一障壁層
170:第一金屬間化合物
202:第二基板
203:裝置區域
250:第二內連線結構
252:第二金屬層
253:第二擴散障壁層
254:介電層
262:第二種子層
264:第二障壁層
266:第二銲層
270:第二金屬間化合物
370:接合結構
W5:寬度

Claims (1)

  1. 一種封裝結構，包括： 一第一內連線結構，形成於一第一基板之上，其中該第一內連線結構包括一第一金屬層； 一第二內連線結構，形成於一第二基板之下；以及 一接合結構，位於該第一內連線結構和該第二內連線結構之間，其中該接合結構包括一第一金屬間化合物和一第二金屬間化合物，該第一金屬間化合物的一部分從該第二金屬間化合物的複數個側壁表面突出，且該第一金屬間化合物和該第二金屬間化合物之間存在一晶界。
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