TW202011676A - High-boost direct current converter respectively controlling the main switch and the auxiliary switch to be switched between a conducting state and a non-conducting state - Google Patents

High-boost direct current converter respectively controlling the main switch and the auxiliary switch to be switched between a conducting state and a non-conducting state Download PDF

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TW202011676A
TW202011676A TW107131555A TW107131555A TW202011676A TW 202011676 A TW202011676 A TW 202011676A TW 107131555 A TW107131555 A TW 107131555A TW 107131555 A TW107131555 A TW 107131555A TW 202011676 A TW202011676 A TW 202011676A
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voltage
diode
electrically connected
lifting
capacitor
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TWI666863B (en
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陳信助
楊松霈
蘇偉府
許仕霖
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崑山科技大學
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

This invention discloses a high-boost direct current converter including a first winding, a main switch, an auxiliary switch, a clamping capacitor, a voltage rising unit, a voltage superimposing unit, an output diode and an output capacitor; the main switch and the auxiliary switch are respectively controlled to be switched between a conducting state and a non-conducting state; the auxiliary switch and the clamping capacitor form an active clamping circuit so that the main switch and the auxiliary switch achieve the flexible switching performance of zero voltage switching; when the output diodes is turned on, the voltage rising unit charges the output capacitor so as to generate a capacitor voltage proportional to a rising voltage; and the voltage superimposing unit boosts by virtue of an induced voltage from the first winding to generate a superimposed voltage at an output side, so that an output voltage is raised, and a high boosting ratio is achieved.

Description

高升壓直流轉換器High boost DC converter

本發明是有關於一種直流轉換器,特別是指一種高升壓直流轉換器。The invention relates to a DC converter, in particular to a high-boost DC converter.

參閱圖1,一種傳統升壓轉換器,若不考慮寄生電阻的影響條件下,其電壓增益跟一輸出電壓VO 、一輸入電壓Vin 、一開關導通比D的關係如下之公式,其中,該導通比D為一大於0且小於1的實數。Referring to FIG. 1, a conventional boost converter, without considering the influence of parasitic resistance, the relationship between its voltage gain and an output voltage V O , an input voltage V in , and a switch conduction ratio D is as follows, where, The conduction ratio D is a real number greater than 0 and less than 1.

Figure 02_image001
Figure 02_image001

由此可知,傳統升壓轉換器若要得到高升壓比的結果,必須操作在極高的開關導通比,然而,極高的導通比將產生大的電流漣波與嚴重的二極體反向恢復電流問題,使轉換器產生功率損失的問題,此外,傳統升壓轉換器的開關是屬於硬式切換(hard switching),再者,傳統升壓轉換器之開關和二極體的電壓應力為高壓的輸出電壓,具有較大導通電阻,導致有較高功率損失的問題。It can be seen that the traditional boost converter has to operate at a very high switch turn-on ratio in order to obtain a high step-up ratio. However, a very high turn-on ratio will produce a large current ripple and severe diode inversion. To restore the current problem, the converter has a problem of power loss. In addition, the switch of the traditional boost converter belongs to hard switching. Furthermore, the voltage stress of the switch and the diode of the traditional boost converter is The high-voltage output voltage has a large on-resistance, resulting in a problem of higher power loss.

因此,本發明的目的,即在提供一種不需藉由極高的導通比就能達到高電壓增益的高升壓直流轉換器。Therefore, the object of the present invention is to provide a high-boost DC converter that can achieve high voltage gain without extremely high turn-on ratio.

於是,本發明高升壓直流轉換器包含,一第一繞組、一主開關、一輔助開關、一箝位電容、一電壓舉升單元、一輸出二極體、一輸出電容,及一電壓疊加單元。Therefore, the high-boost DC converter of the present invention includes a first winding, a main switch, an auxiliary switch, a clamping capacitor, a voltage lifting unit, an output diode, an output capacitor, and a voltage superposition unit.

該第一繞組具有一電連接一輸入電壓之陽極的第一端及一電連接一第一共同接點的第二端,該主開關具有一電連接該第一共同接點的第一端及一接地的第二端,且該主開關受控在一導通狀態及一不導通狀態間切換。該輔助開關具有一第一端及一電連接該第一共同接點的第二端,且該輔助開關受控在一導通狀態及一不導通狀態間切換。The first winding has a first end electrically connected to an anode of an input voltage and a second end electrically connected to a first common contact, and the main switch has a first end electrically connected to the first common contact and A second terminal connected to ground, and the main switch is controlled to switch between a conducting state and a non-conducting state. The auxiliary switch has a first end and a second end electrically connected to the first common contact, and the auxiliary switch is controlled to switch between a conducting state and a non-conducting state.

該箝位電容具有一電連接該輔助開關的第一端的第一端,及一電連接一輸入電壓之陽極的第二端。該電壓舉升單元具有一電連接該第一共同接點的舉升輸入端,及一舉升輸出端,用以將來自該第一繞組的一感應電壓進行升壓,而產生一舉升電壓從其舉升輸出端輸出。The clamp capacitor has a first end electrically connected to the first end of the auxiliary switch, and a second end electrically connected to an anode of an input voltage. The voltage lifting unit has a lifting input terminal electrically connected to the first common contact, and a lifting output terminal for boosting an induced voltage from the first winding to generate a lifting voltage from the Lifting output output.

該電壓舉升單元包括一第一舉升電容、一第二舉升電容、一第二繞組、一第一舉升二極體,及一第二舉升二極體。該第一舉升電容具有一電連接該舉升輸入端的第一端及一第二端,該第二繞組具有一電連接該第一舉升電容之第二端的第一端及一第二端,該第二舉升電容具有一電連接該第二繞組之第二端的第一端,及一電連接該舉升輸出端的第二端,該第一舉升二極體具有一電連接該第二繞組之第一端的陽極,及一電連接該舉升輸出端的陰極,該第二舉升二極體具有一電連接該舉升輸入端的陽極,及一電連接該第二繞組之第二端的陰極。The voltage lifting unit includes a first lifting capacitor, a second lifting capacitor, a second winding, a first lifting diode, and a second lifting diode. The first lifting capacitor has a first end electrically connected to the lifting input end and a second end, and the second winding has a first end electrically connected to the second end of the first lifting capacitor and a second end , The second lifting capacitor has a first end electrically connected to the second end of the second winding, and a second end electrically connected to the lifting output end, the first lifting diode has an electrical connection to the first An anode at the first end of the second winding, and a cathode electrically connected to the lifting output, the second lifting diode has an anode electrically connected to the lifting input, and a second electrically connected to the second winding Cathode.

該輸出二極體具有一電連接該舉升輸出端的陽極,及一電連接一第二共同接點的陰極。該輸出電容具有一電連接該第二共同接點的第一端,及一接地的第二端,當該輸出二極體導通時,接收來自該舉升電壓的充電而產生一正比該舉升電壓的電容電壓。該電壓疊加單元電連接該第二共同接點以串聯於該輸出電容,且用以將來自該第一繞組的該感應電壓進行升壓,而產生一疊加電壓,該疊加電壓與該電容電壓加總而產生一輸出電壓。The output diode has an anode electrically connected to the lifting output end, and a cathode electrically connected to a second common contact. The output capacitor has a first terminal electrically connected to the second common contact and a second terminal connected to ground. When the output diode is turned on, it receives a charge from the lifting voltage to generate a proportional to the lifting The voltage of the capacitor. The voltage superimposing unit is electrically connected to the second common contact to be serially connected to the output capacitor, and is used to boost the induced voltage from the first winding to generate a superimposed voltage, which is added to the capacitor voltage In total, an output voltage is generated.

該電壓疊加單元包括一第一疊加二極體、一第二疊加二極體、一第三繞組、一第一疊加電容,及一第二疊加電容。該第一疊加二極體具有一電連接該第二共同接點的陽極及一陰極,該第三繞組具有一電連接該第一疊加二極體之陰極的第一端及一第二端,該第一疊加電容具有一電連接該第三繞組之第二端的第一端,及一電連接該第二共同接點的第二端,該第二疊加二極體具有一電連接該第一疊加二極體之陰極的陽極及一陰極,該第二疊加電容具有一電連接該第二疊加二極體之陰極的第一端,及一電連接該第一疊加電容之第一端的第二端。The voltage superimposing unit includes a first superimposed diode, a second superimposed diode, a third winding, a first superimposed capacitor, and a second superimposed capacitor. The first superposed diode has an anode and a cathode electrically connected to the second common contact, and the third winding has a first end and a second end electrically connected to the cathode of the first superposed diode, The first superimposed capacitor has a first end electrically connected to the second end of the third winding, and a second end electrically connected to the second common contact, and the second superimposed diode has an electrical connection to the first An anode and a cathode of the cathode of the superimposed diode, the second superimposed capacitor has a first end electrically connected to the cathode of the second superimposed diode, and a first end electrically connected to the first end of the first superimposed capacitor Two ends.

本發明的功效在於:該電壓舉升單元與該電壓疊加單元有效地提高整體的升壓比卻不需要開關操作在高導通比。The effect of the present invention is that the voltage lifting unit and the voltage superimposing unit can effectively improve the overall boosting ratio without the need for switching operation at a high conduction ratio.

在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same numbers.

參閱圖2,本發明高升壓直流轉換器之一實施例,包含一耦合電感的一第一繞組N1 、一主開關S1 、一輔助開關S2 、一箝位電容Cc 、一電壓舉升單元2、一輸出二極體D0 、一輸出電容C0 、一電壓疊加單元3,及一控制單元4。Referring to FIG. 2, an embodiment of the high boost DC converter of the present invention includes a first winding N 1 of a coupled inductor, a main switch S 1 , an auxiliary switch S 2 , a clamping capacitor C c , and a voltage lifting unit 2, an output diode D 0, an output capacitor C 0, a voltage superimposing unit 3, and a control unit 4.

該第一繞組N1 具有一打點的第一端及一第二端,該主開關S1 具有一電連接一第一共同接點的第一端及一接地的第二端,且該控制單元4透過一第一脈波調變信號控制該主開關在一導通狀態及一不導通狀態間切換。當該主開關S1 在該導通狀態時,該第一繞組N1 接收來自一輸入電壓Vin 所提供的一充電電流iIn ,使該第一繞組N1 產生一正比於一磁化電感Lm 大小的一第一感應電壓VLm 。該主開關S1 是一N型功率半導體電晶體,且該主開關S1 的第一端是汲極,該主開關S1 的第二端是源極。The first winding N 1 has a dotted first end and a second end, the main switch S 1 has a first end electrically connected to a first common contact and a grounded second end, and the control unit 4. Control the main switch to switch between a conducting state and a non-conducting state through a first pulse modulation signal. When the main switch S 1 is in the on state, the first winding N 1 receives a charging current i In provided by an input voltage V in , so that the first winding N 1 generates a magnetizing inductance L m A magnitude of a first induced voltage V Lm . The main switch S 1 is an N-type power semiconductor transistor, and a first terminal of the primary switch S 1 is a drain, the second terminal of the primary switch S 1 is a source.

該輔助開關S2 具有一電連接該箝位電容Cc 之第一端的第一端,及一電連接該第一共同接點的第二端,且該控制單元4透過一第二脈波調變信號控制該輔助開關S2 在一導通狀態及一不導通狀態間切換,當該主開關S1 在該不導通狀態且該輔助開關S2 在該導通狀態時。該輔助開關S2 是一N型功率半導體電晶體,且該輔助開關S2 的第一端是汲極,該輔助開關S2 的第二端是源極。The auxiliary switch S 2 has a first end electrically connected to the first end of the clamping capacitor C c , and a second end electrically connected to the first common contact, and the control unit 4 passes a second pulse wave The modulation signal controls the auxiliary switch S 2 to switch between a conductive state and a non-conductive state when the main switch S 1 is in the non-conductive state and the auxiliary switch S 2 is in the conductive state. The auxiliary switch S 2 is an N-type power semiconductor transistor, and the first auxiliary switch S 2 is a drain terminal, the second terminal of the auxiliary switch S 2 is a source.

該箝位電容Cc 具有一電連接該輸入電壓Vin 陽極的第二端。The clamping capacitor C c having a terminal electrically connected to the second input voltage V in the anode.

該電壓舉升單元2具有一舉升輸入端及一舉升輸出端,且該電壓舉升單元2包括一第一舉升電容C3 、該耦合電感的一第二繞組N2 、一第二舉升電容C4 、一第一舉升二極體D3 ,及一第二舉升二極體D4 。該第一舉升電容C3 具有一電連接該第一共同接點(該舉升輸入端)的第一端,及一電連接該第二繞組N2 之第一端的第二端。該第二繞組N2 具有一打點且電連接該第一舉升電容C3 之第二端的第一端,及一電連接該第二舉升電容C4 之第一端的第二端。該第二舉升電容C4 具有一電連接該第二繞組N2 之第二端的第一端,及一電連接該輸出二極體D0 之陽極(該舉升輸出端)的第二端。該第一舉升二極體D3 具有一電連接該第二繞組N2 之第一端的陽極,及一電連接該輸出二極體D0 之陽極的陰極。該第二舉升二極體D4 具有一電連接該第一共同接點的陽極,及一電連接該第二繞組N2 之第二端的陰極。The voltage lifting unit 2 has a lifting input terminal and a lifting output terminal, and the voltage lifting unit 2 includes a first lifting capacitor C 3 , a second winding N 2 of the coupling inductor, and a second lifting Capacitor C 4 , a first lifting diode D 3 , and a second lifting diode D 4 . The first lifting capacitor C 3 has a first terminal electrically connected to the first common contact (the lifting input terminal), and a second terminal electrically connected to the first terminal of the second winding N 2 . The second winding N 2 has a first end electrically connected to the second end of the first lifting capacitor C 3 , and a second end electrically connected to the first end of the second lifting capacitor C 4 . The second lifting capacitor C 4 has a first end electrically connected to the second end of the second winding N 2 , and a second end electrically connected to the anode of the output diode D 0 (the lift output) . The first lifting diode D 3 has an anode electrically connected to the first end of the second winding N 2 , and a cathode electrically connected to the anode of the output diode D 0 . The second lifting diode D 4 has an anode electrically connected to the first common contact, and a cathode electrically connected to the second end of the second winding N 2 .

該電壓疊加單元3包括一第一疊加二極體D1 、該耦合電感的一第三繞組N3 、一第一疊加電容C1 、一第二疊加二極體D2 ,及一第二疊加電容C2 。該第一疊加二極體D1 具有一電連接一第二共同接點的陽極及一電連接該第三繞組N3 之第一端的陰極。該第三繞組N3 具有一打點且電連接該第一疊加二極體D1 之陰極的第一端,及一電連接該第一疊加電容C1 之第一端的第二端。該第一疊加電容C1 具有一電連接該第三繞組N3 之第二端的第一端,及一電連接該第二共同接點的第二端。該第二疊加二極體D2 具有一電連接該第一疊加二極體D1 之陽極的陰極,及一電連接該第二疊加電容C2 之第一端的陰極。該第二疊加電容C2 具有一電連接該第二疊加二極體D2 之陰極的第一端,及一電連接該第一疊加電容C1 之第一端的第二端。The voltage superimposing unit 3 includes a first superimposing diode D 1 , a third winding N 3 of the coupling inductor, a first superimposing capacitor C 1 , a second superimposing diode D 2 , and a second superimposing Capacitor C 2 . The first superimposed diode D 1 has an anode electrically connected to a second common contact and a cathode electrically connected to the first end of the third winding N 3 . The third winding N 3 has a first point electrically connected to the cathode of the first superimposed diode D 1 and a second end electrically connected to the first end of the first superimposed capacitor C 1 . The first superimposed capacitor C 1 has a first end electrically connected to the second end of the third winding N 3 , and a second end electrically connected to the second common contact. The second stacked diode D 2 has a cathode electrically connected to the anode of the first stacked diode D 1 and a cathode electrically connected to the first end of the second stacked capacitor C 2 . The second superimposed capacitor C 2 has a first end electrically connected to the cathode of the second superimposed diode D 2 , and a second end electrically connected to the first end of the first superimposed capacitor C 1 .

該控制單元4產生一切換該主開關S1 的第一脈波調變信號,及一切換該輔助開關S2 的第二脈波調變信號,以下將以十一階段進一步說明該主開關S1 及該輔助開關S2 切換所產生之一本發明高升壓直流轉換器的時序圖。The control unit 4 generates a first pulse modulation signal that switches the main switch S 1 and a second pulse modulation signal that switches the auxiliary switch S 2. The main switch S will be further described in eleven stages below 1 and a timing diagram of the high-boost DC converter of the present invention produced by the switching of the auxiliary switch S 2 .

參閱圖3,為本實施例的一等效電路圖,用以說明該第一繞組N1 的非理想等效電路中的磁化電感Lm 、一漏電感Lk ,及一主開關的寄生電容Cr ,其中,各元件的電壓與跨壓分別為:該輸入電壓Vin 、一第一繞組的跨壓VN1 、一第二繞組的跨壓VN2 、一第三繞組的跨壓VN3 、一輸出電壓Vo 、一寄生電容的跨壓VCr 、一箝位電容的跨壓VCc 、一第二疊加電容C2 的跨壓VC2 、一第一疊加電容的跨壓VC1 、一輸出電容的跨壓VC0 、一第一舉升電容的跨壓VC3 、一第二舉升電容的跨壓VC4 、一第一舉升二極體的跨壓VD3 、一第二舉升二極體的跨壓VD4 、一第二疊加二極體的跨壓VD2 、一第一疊加二極體的跨壓VD1 、一輸出二極體的跨壓VD0 ,及一磁化電感的跨壓VLm 。各元件導通時的電流分別為:一輸入電流iIn 、一主開關的導通電流iS1 、一輔助開關的導通電流iS2 、一第一舉升二極體的導通電流iD3 、一第二舉升二極體的導通電流iD4 、一第二疊加二極體的導通電流iD2 、一第一疊加二極體的導通電流iD1 、一輸出二極體的導通電流iD0 、一磁化電感的電流iLm ,及 一漏電感的電流iLkReferring to Figure 3, an equivalent circuit diagram of the embodiment of the present embodiment, for explaining the first non-over winding N 1 of an equivalent circuit of the magnetizing inductance L m, a leakage inductance L k, the parasitic capacitance C a and the main switch r, wherein the voltage across each of the pressure elements are: the input voltage V in, V N3 cross voltage across a voltage V N1 of the first winding, a second cross voltage V N2 winding, a third winding, An output voltage V o , a parasitic capacitance across voltage V Cr , a clamp capacitance across voltage V Cc , a second overlay capacitance C 2 across voltage V C2 , a first overlay capacitance across voltage V C1 , a Output capacitor cross voltage V C0 , a first lift capacitor cross voltage V C3 , a second lift capacitor cross voltage V C4 , a first lift diode cross voltage V D3 , a second lift The trans-voltage V D4 of the rising diode, the trans-voltage V D2 of a second superimposed diode, the trans-voltage V D1 of a first superimposed diode, the trans-voltage V D0 of an output diode, and a magnetization The voltage across the inductor V Lm . The currents when each element is turned on are: an input current i In , a main switch conduction current i S1 , an auxiliary switch conduction current i S2 , a first lifting diode conduction current i D3 , a second On-state current i D4 of the lifting diode, on-state current i D2 of a second superimposed diode, on-state current i D1 of a first superimposed diode, on-current i D0 of an output diode, and magnetization The inductor current i Lm and the leakage inductor current i Lk .

以下為本實施例操作於十一階段的各電路圖,其中,導通的元件以實線表示,不導通的元件以虛線表示,且以下的分析是基於五個假設前提下:The following are the circuit diagrams of the eleven-stage operation of this embodiment, in which the conducting elements are indicated by solid lines and the non-conducting elements are indicated by dashed lines, and the following analysis is based on five assumptions:

假設一:所有功率開關與二極體的導通壓降為零。Hypothesis 1: the conduction voltage drop between all power switches and diodes is zero.

假設二:該第二疊加電容C2 、該第一疊加電容C1 ,及該輸出電容C0 夠大,可忽略電容電壓漣波,該第二疊加電容C2 的跨壓VC2 、該第一疊加電容C1 的跨壓VC 1 ,及該輸出電容C0 的跨壓VC 0 可視為常數。Hypothesis 2: the second superimposed capacitor C 2 , the first superimposed capacitor C 1 , and the output capacitor C 0 are large enough to ignore the ripple of the capacitor voltage, the cross-over voltage V C2 of the second superimposed capacitor C 2 , the first A cross voltage V C 1 of the superimposed capacitor C 1 and the cross voltage V C 0 of the output capacitor C 0 can be regarded as constants.

假設三:有一第一繞組的匝數n1 、一第二繞組的匝數n2 ,及一第三繞組的匝數n3 。則一第一繞組與第二繞組的匝數比N12 等於一第一繞組與第三繞組的匝數比N13 等於一耦合電感匝數比n,其中n為一大於等於1的實數(換言之,

Figure 02_image003
),且該磁化電感Lm 遠大於該漏電感Lk ,即一耦合係數
Figure 02_image005
。Hypothesis 3: the number of turns of a first winding n 1 , the number of turns of a second winding n 2 , and the number of turns of a third winding n 3 . A number of turns of the first winding and the second winding N 12 is equal to a ratio of the first winding and the third winding has an equal coupling ratio of inductor turns ratio N 13 n, where n is a real number not less than 1 (in other words ,
Figure 02_image003
), and the magnetizing inductance L m is much larger than the leakage inductance L k , that is, a coupling coefficient
Figure 02_image005
.

假設四:該耦合電感的磁化電感電流iLm 操作在連續導通模式(Continuous conduction mode, CCM)。Hypothesis 4: The magnetizing inductor current i Lm of the coupled inductor operates in continuous conduction mode (Continuous conduction mode, CCM).

假設五:該主開關S1 和該輔助開關S2 是互補式驅動,而且兩者之間有極短的盲時(dead time),由於盲時極短,若該主開關S1 有一導通比D,則輔助開關之導通比可視為1減該導通比D(換言之,1-D)。Hypothesis 5: The main switch S 1 and the auxiliary switch S 2 are complementary drives, and there is a very short dead time between the two. Because the blind time is extremely short, if the main switch S 1 has a conduction ratio D, the conduction ratio of the auxiliary switch can be regarded as 1 minus the conduction ratio D (in other words, 1-D).

基於上述五個假設條件下,分別針對每一階段在以下的內容中進行說明,其中,時間t對應每一階段的開始時間分別為一第一開始時間t0到一第十一開始時間t10,當時間t到達一第十一結束時間t11,整個轉換器完成一個循環的十一個階段。Based on the above five assumptions, each stage is described in the following content, where the time t corresponds to the start time of each stage is a first start time t0 to an eleventh start time t10, when When the time t reaches an eleventh end time t11, the entire converter completes the eleventh phase of a cycle.

第一階段[t:t0~t1]:The first stage [t: t0~t1]:

參閱圖4及圖5,該主開關S1 將由導通轉成不導通,該輔助開關S2 為不導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 為導通,該第一疊加二極體D1 及該輸出二極體D0 皆為不導通。4 and 5, the main switch S 1 will be turned from non-conducting, the auxiliary switch S 2 will be non-conducting, the first lifting diode D 3 and the second lifting diode D 4 , And the second superimposed diode D 2 is conductive, and the first superimposed diode D 1 and the output diode D 0 are both non-conductive.

本階段開始的時間t等於該第六開始時間t0,該主開關S1 導通,該輔助開關S2 為不導通。該輸入電壓Vin 跨於該磁化電感Lm 與該漏電感Lk 上,該磁化電感的電流iLm 與該漏電感的電流iLk 呈線性上升。藉由該耦合電感的該第二繞組N2 、該第一舉升二極體D3 ,及該第二舉升二極體D4 ,該第一舉升電容C3 及該第二舉升電容C4 處於充電狀態。該耦合電感第三繞組N3 的電流經由切換該第二疊加二極體D2 對該第二疊加電容C2 充電。該輸出電容C0 、該第一疊加電容C1 ,及該第一疊加電容C2 供給一輸出負載Ro 能量。在本階段中,The time t at which this stage starts is equal to the sixth start time t0, the main switch S 1 is turned on, and the auxiliary switch S 2 is turned off. The input voltage V in spans the magnetizing inductance L m and the leakage inductance L k , and the current i Lm of the magnetizing inductance and the current i Lk of the leakage inductance increase linearly. With the second winding N 2 of the coupled inductor, the first lifting diode D 3 , and the second lifting diode D 4 , the first lifting capacitor C 3 and the second lifting The capacitor C 4 is in a charged state. The current of the third winding N 3 of the coupled inductor charges the second superimposed capacitor C 2 by switching the second superimposed diode D 2 . The output capacitor C 0 , the first superimposed capacitor C 1 , and the first superimposed capacitor C 2 provide an output load Ro energy. At this stage,

Figure 02_image007
Figure 02_image009
…式一
Figure 02_image007
Figure 02_image009
… Formula One

當時間t等於該第二開始時間t1,該主開關S1 切換為該不導通狀態時,本階段結束。When the time t is equal to the second start time t1, the main switch S 1 is switched to non-conducting state, for the end of this phase.

第二階段[t:t1~t2]:The second stage [t: t1~t2]:

參閱圖4及圖6,該主開關S1 為不導通,該輔助開關S2 為不導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 為導通,該第一疊加二極體D1 及該輸出二極體D0 皆為不導通。4 and 6, the main switch S 1 is non-conductive, the auxiliary switch S 2 is non-conductive, the first lifting diode D 3 , the second lifting diode D 4 , and the first The second superimposed diode D 2 is turned on, and both the first superimposed diode D 1 and the output diode D 0 are turned off.

本階段開始的時間t等於該第二開始時間t1,該漏電感電流iLk 開始對該主開關S1 的該寄生電容Cr 充電。該寄生電容的跨壓VCr 由零以共振方式增加至該輸入電壓Vin 加上該箝位電容的跨壓VCc (換言之,VCr =Vin + VCc )。該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 保持導通狀態。因為該主開關S1 的該寄生電容Cr 非常小,所以一主開關的跨壓vds1 可近似為:Time start of the period t is equal to the second start time t1, the leakage inductance current i Lk starts charging the parasitic capacitance of the main switch S is C 1 r. The cross voltage V Cr of the parasitic capacitance increases from zero to the input voltage V in resonance, plus the cross voltage V Cc of the clamping capacitor (in other words, V Cr =V in + V Cc ). The first lifting diode D 3 , the second lifting diode D 4 , and the second superimposed diode D 2 are kept in a conducting state. Because the parasitic capacitance C r of the main switch S 1 is very small, the voltage across the main switch v ds1 can be approximated as:

Figure 02_image011
…式二
Figure 02_image011
...Form two

當時間t等於該第三開始時間t2,由於該寄生電容的跨壓VCr 充電至等於該輸入電壓Vin 加上該箝位電容的跨壓VCc (換言之,VCr =Vin + VCc )時,該輔助開關S2 的本體二極體由不導通轉成為導通,本階段結束。When the time t is equal to the third start time t2, the cross voltage V Cr of the parasitic capacitance is charged to be equal to the input voltage V in plus the cross voltage V Cc of the clamping capacitor (in other words, V Cr =V in + V Cc ), the body diode of the auxiliary switch S 2 changes from non-conducting to conducting, and this stage ends.

第三階段[t:t2~t3]:The third stage [t: t2~t3]:

參閱圖4及圖7,該主開關S1 為不導通,該輔助開關S2 將由不導通轉成導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 為導通,該第一疊加二極體D1 及該輸出二極體D0 皆為不導通。4 and 7, the main switch S 1 is non-conducting, the auxiliary switch S 2 will be turned from non-conducting to conducting, the first lifting diode D 3 and the second lifting diode D 4 , And the second superimposed diode D 2 is conductive, and the first superimposed diode D 1 and the output diode D 0 are both non-conductive.

本階段開始的時間t等於該第三開始時間t2,該寄生電容Cr 跨壓VCr 充電至等於該輸入電壓Vin 加上該箝位電容的跨壓VCc (換言之,VCr =Vin + VCc ),該輔助開關S2 的本體二極體開始導通,該漏電感電流iLk 經該輔助開關S2 的本體二極體,開始對該箝位電容Cc 充電。而有造成一漏電感的跨壓為一負電壓:The time t at which this stage starts is equal to the third start time t2, and the parasitic capacitance C r is charged across the voltage V Cr to equal the input voltage V in plus the clamp voltage V Cc (in other words, V Cr =V in + V Cc ), the body diode of the auxiliary switch S 2 starts to conduct, and the leakage inductance current i Lk passes through the body diode of the auxiliary switch S 2 to start charging the clamping capacitor C c . And the cross voltage that causes a leakage inductance is a negative voltage:

Figure 02_image013
…式三
Figure 02_image013
...Form three

該漏電感的電流iLk 開始下降,該耦合電感的該第二繞組N2 及該第三繞組N3 的電流也開始下降,因此該第一舉升二極體的導通電流iD3 、該第二舉升二極體的導通電流iD4 ,及該第二疊加二極體的導通電流iD2 也隨之下降。在本階段,該輔助開關S2 之跨壓為零,具備零電壓切換(zero voltage switching, ZVS)的條件,為了讓該輔助開關S2 達到零電壓切換之柔切性能(soft switching),在該漏電感的電流iLk 方向相反之前,該輔助開關S2 必須切換為導通。The current i Lk of the leakage inductance starts to decrease, and the currents of the second winding N 2 and the third winding N 3 of the coupling inductance also begin to decrease. Therefore, the conduction current i D3 of the first lifting diode and the first The conduction current i D4 of the two-lift diode and the conduction current i D2 of the second stacked diode also decrease accordingly. At this stage, the cross voltage of the auxiliary switch S 2 is zero, and the condition of zero voltage switching (ZVS) is satisfied. In order to allow the auxiliary switch S 2 to achieve the soft switching performance of zero voltage switching, Before the current i Lk of the leakage inductance is reversed, the auxiliary switch S 2 must be turned on.

當時間t等於該第三開始時間t3,該輔助開關S2由不導通切換為導通時,達成零電壓切換性能之柔切性能,本階段結束。When the time t is equal to the third start time t3, and the auxiliary switch S2 is switched from non-conducting to conducting, the soft cut performance of the zero-voltage switching performance is achieved, and this stage ends.

第四階段[t:t3~t4]:The fourth stage [t: t3~t4]:

參閱圖4及圖8,該主開關S1 為不導通,該輔助開關S2 在零電壓切換的狀態下導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 將由導通切換為不導通,該第一疊加二極體D1 維持為不導通,該輸出二極體D0 將由不導通切換為導通。4 and 8, the main switch S 1 is non-conducting, the auxiliary switch S 2 is conducting in a state of zero voltage switching, the first lifting diode D 3 and the second lifting diode D 4 , and the second superimposed diode D 2 will be switched from conducting to non-conducting, the first superimposed diode D 1 will remain non-conducting, and the output diode D 0 will be switched from non-conducting to conducting.

本階段開始的時間t等於該第四開始時間t3,該輔助開關S2 切換為導通,達成零電壓切換。由於該漏電感的跨壓VLk 為一負電壓,該漏電感的電流iLk 持續下降,該第一舉升二極體的導通電流iD3 、該第二舉升二極體的導通電流iD4 ,及該第二疊加二極體的導通電流iD2 持續下降。因為該耦合電感有該漏電感Lk 的存在,該第一舉升二極體的導通電流iD3 、該第二舉升二極體的導通電流iD4 ,及該第二疊加二極體的導通電流iD2 下降的速率受到該漏電感Lk 的限制,緩和該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 的反向恢復問題。The time t at which this stage starts is equal to the fourth start time t3, and the auxiliary switch S 2 is switched on, achieving zero voltage switching. Since the cross-voltage V Lk of the leakage inductance is a negative voltage, the current i Lk of the leakage inductance continues to decrease, the conduction current i D3 of the first lifting diode, and the conduction current i of the second lifting diode D4 and the conduction current i D2 of the second superimposed diode continue to decrease. Because of the presence of the leakage inductance L k in the coupled inductance, the on-current i D3 of the first lifting diode, the on-current i D4 of the second lifting diode, and the on-current i D4 of the second lifting diode The rate at which the on-current i D2 decreases is limited by the leakage inductance L k , which moderates the first lifting diode D 3 , the second lifting diode D 4 , and the second superimposed diode D 2 Reverse recovery problem.

當時間t等於該第五開始時間t4,該第一舉升二極體的導通電流iD3 、該第二舉升二極體的導通電流iD4 ,及該第二疊加二極體的導通電流iD2 下降至零,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 自然轉態切換為不導通。同時該耦合電感的該第二繞組N2 的電流方向改變,該輸出二極體D0 轉態切換為導通,本階段結束。When the time t is equal to the fifth start time t4, the conduction current i D3 of the first lifting diode, the conduction current i D4 of the second lifting diode, and the conduction current of the second superposed diode i D2 drops to zero, the first lifting diode D 3 , the second lifting diode D 4 , and the second superimposed diode D 2 naturally switch to non-conducting. At the same time, the current direction of the second winding N 2 of the coupled inductor changes, and the output diode D 0 is switched to conductive state, and this stage ends.

第五階段[t:t4~t5]:The fifth stage [t: t4~t5]:

參閱圖4及圖9,該主開關S1 為不導通,該輔助開關S2 為導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 為不導通,該第一疊加二極體D1 將由不導通切換為導通,該輸出二極體D0 為導通。4 and 9, the main switch S 1 is non-conducting, the auxiliary switch S 2 is conducting, the first lifting diode D 3 , the second lifting diode D 4 , and the second The superimposed diode D 2 is non-conductive, the first superimposed diode D 1 will be switched from non-conductive to conductive, and the output diode D 0 is conductive.

本階段開始的時間t等於該第五開始時間t4,該第一舉升電容C3 及該第二舉升電容C 開始放電,將能量提供至該輸出電容C0 。該漏電感Lk 與該磁化電感Lm 的電壓和等於負的該箝位電容的跨壓VCc ,因此該漏電感的電流iLk 持續下降。在本階段中,該漏電感的電流iLk 下降至電流的流向改變,該漏電感的電流iLk 對該箝位電容Cc 放電。當該箝位電容Cc 放電,該箝位電容Cc 的跨壓VCc 下降,使得該第一繞組N1 的電壓下降且反射至該第三繞組N3 的跨壓VN3 也下降至等於該第一疊加電容的跨壓VC 1 時,該第一疊加二極體D1 轉態切換為導通。The time t at which this stage starts is equal to the fifth start time t4, the first lifting capacitor C 3 and the second lifting capacitor C 4 start to discharge, and energy is provided to the output capacitor C 0 . The voltage sum of the leakage inductance L k and the magnetizing inductance L m is equal to the negative voltage across the clamping capacitor V Cc , so the current i Lk of the leakage inductance continues to decrease. In this stage, the current i Lk of the leakage inductance drops until the flow direction of the current changes, and the current i Lk of the leakage inductance discharges the clamping capacitor C c . When the clamping capacitor C c is discharged, the cross voltage V Cc of the clamping capacitor C c drops, so that the voltage of the first winding N 1 drops and the cross voltage V N3 reflected to the third winding N 3 also drops to be equal to When the voltage V C 1 of the first superimposed capacitor is switched, the first superimposed diode D 1 is switched to be conductive.

當時間t等於該第六開始時間t5,當該第三繞組的跨壓VN3 等於該第一疊加電容的跨壓VC 1 時,該第一疊加二極體D1 轉態切換為導通,本階段結束。When the time t is equal to the sixth start time t5, when the cross-voltage V N3 of the third winding is equal to the cross-voltage V C 1 of the first superimposed capacitor, the first superimposed diode D 1 is switched to on, This stage is over.

第六階段[t:t5~t6]:The sixth stage [t: t5~t6]:

參閱圖4及圖10,該主開關S1 為不導通,該輔助開關S2 為導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 為不導通,該第一疊加二極體D1 為導通,該輸出二極體D0 將由導通切換為不導通。4 and 10, the main switch S 1 is non-conductive, the auxiliary switch S 2 is conductive, the first lifting diode D 3 , the second lifting diode D 4 , and the second The superimposed diode D 2 is non-conductive, the first superimposed diode D 1 is conductive, and the output diode D 0 will be switched from conductive to non-conductive.

本階段開始的時間t等於該第六開始時間t5,該第一疊加二極體D1 轉態切換為導通,該第一疊加二極體的導通電流iD1 開始增加,該漏電感的電流iLk 持續下降,該輸出二極體的導通電流iD0 開始下降。Time start of the period t is equal to the start of the sixth time t5, the superposition of the first diode D 1 is transited switched on, the first superimposition diode Dl conduction current i starts to increase, the leakage inductance current i Lk continues to decrease, and the on-current i D0 of the output diode begins to decrease.

當時間t等於該第七開始時間t6,該輸出二極體的導通電流iD0 下降至零,該輸出二極體D0 轉態切換為不導通,本階段結束。When the time t is equal to the seventh start time t6, the conduction current i D0 of the output diode drops to zero, the output diode D 0 transitions to non-conduction, and this stage ends.

第七階段[t:t6~t7]:The seventh stage [t: t6~t7]:

參閱圖4及圖11,該主開關S1 為不導通,該輔助開關S2 將由導通轉為不導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 為不導通,該第一疊加二極體D1 為導通,該輸出二極體D0 為不導通。Referring to FIGS. 4 and 11, the main switch S 1 is non-conducting, the auxiliary switch S 2 will be switched from conducting to non-conducting, the first lifting diode D 3 and the second lifting diode D 4 , And the second superimposed diode D 2 is non-conductive, the first superimposed diode D 1 is conductive, and the output diode D 0 is non-conductive.

本階段開始的時間t等於該第七開始時間t6,該輸出二極體D0 為不導通,儲存在該磁化電感Lm 的能量藉由該耦合電感傳送至該第三繞組N3 ,對該第一疊加電容C1 充電。The time t at the beginning of this stage is equal to the seventh start time t6, the output diode D 0 is non-conducting, and the energy stored in the magnetizing inductance L m is transmitted to the third winding N 3 through the coupling inductance. The first superimposed capacitor C 1 is charged.

當時間t等於該第八開始時間t7,該輔助開關S2 由導通切換為不導通時,本階段結束。When the time t is equal to the eighth start time t7, and the auxiliary switch S 2 is switched from conductive to non-conductive, this stage ends.

第八階段[t:t7~t8]:The eighth stage [t: t7~t8]:

參閱圖4及圖12,該主開關S1 為不導通,該輔助開關S2 為不導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 為不導通,該第一疊加二極體D1 為導通,該輸出二極體D0 為不導通。4 and 12, the main switch S 1 is non-conductive, the auxiliary switch S 2 is non-conductive, the first lifting diode D 3 , the second lifting diode D 4 , and the first The second superimposed diode D 2 is non-conductive, the first superimposed diode D 1 is conductive, and the output diode D 0 is non-conductive.

本階段開始的時間t等於該第八開始時間t7,因該輔助開關S2 為不導通,該漏電感Lk 和該寄生電容Cr形成新的諧振電路,並開始釋放該寄生電容Cr 的能量,因為該寄生電容Cr 很小,所以該寄生電容的跨壓VCr 下降很快。由於該寄生電容的跨壓VCr 持續下降,當該漏電感Lk 的跨壓為一正電壓,該漏電感的電流iLk 開始上升。Time start of the period t is equal to the eighth start time T7, because of the auxiliary switch S 2 is not turned on, the leakage inductance L k and the parasitic capacitance Cr form a new resonant circuit, and starts releasing the parasitic capacitance C r energy because the parasitic capacitance C r is small, the voltage across the parasitic capacitance decreases rapidly V Cr. Since the cross voltage V Cr of the parasitic capacitance continues to decrease, when the cross voltage of the leakage inductance L k is a positive voltage, the current i Lk of the leakage inductance starts to rise.

當時間t等於該第九開始時間t8,由於該寄生電容的跨壓VCr 下降至零,該主開關S1 的本體二極體導通,本階段結束。When the time t is equal to the ninth start time t8, since the voltage V Cr of the parasitic capacitance drops to zero, the body diode of the main switch S 1 is turned on, and this stage ends.

第九階段[t:t8~t9]:The ninth stage [t: t8~t9]:

參閱圖4及圖13,該主開關S1 將由不導通轉為導通,該輔助開關S2 為不導通,該第一舉升二極體D3 、該第二舉升二極體D4 ,及該第二疊加二極體D2 為不導通,該第一疊加二極體D1 為導通,該輸出二極體D0 為不導通。4 and 13, the main switch S 1 will be turned from non-conducting to conductive, the auxiliary switch S 2 is non-conducting, the first lifting diode D 3 and the second lifting diode D 4 , And the second superimposed diode D 2 is non-conductive, the first superimposed diode D 1 is conductive, and the output diode D 0 is non-conductive.

本階段開始的時間t等於該第九開始時間t8,該主開關S1 的本體二極體導通,故該主開關S1 之跨壓為零,該主開關S1 具備零電壓切換的條件,為了讓該主開關S1 達到零電壓切換之柔切性能,在該漏電感的電流iLk 方向由負轉正之前,該主開關S1 必須切換為導通。Start time t equal to the ninth stage of this start time T8, the main body 1 of the switch S diode conducting, the voltage across the primary switch S 1 of zero, the main switch S 1 includes a condition of zero-voltage switching, In order for the main switch S 1 to achieve the soft cut performance of zero voltage switching, before the current i Lk direction of the leakage inductance changes from negative to positive, the main switch S 1 must be switched on.

當時間t等於該第十開始時間t9,該主開關S1 由不導通切換為導通,達成零電壓切換時,本階段結束。When the time t is equal to a tenth of the start time T9, the main switch S 1 is switched from the non-conducting to a conducting, to reach zero voltage switching, the end of this phase.

第十階段[t:t9~t10]:The tenth stage [t: t9~t10]:

參閱圖4及圖14,該主開關S1 為導通,該輔助開關S2 為不導通,該第一舉升二極體D3 及該第二舉升二極體D4 將由不導通轉成導通,該第二疊加二極體D2 為不導通,該第一疊加二極體D1 將由導通轉成不導通,該輸出二極體D0 為不導通。4 and 14, the main switch S 1 is turned on, the auxiliary switch S 2 is turned off, and the first lifting diode D 3 and the second lifting diode D 4 will be turned from non-conducting to Turn on, the second superimposed diode D 2 is non-conductive, the first superimposed diode D 1 will turn from conductive to non-conductive, and the output diode D 0 is non-conductive.

本階段開始的時間t等於該第十開始時間t9,該主開關S1 由不導通切換為導通,達成零電壓切換。該漏電感的電流iLk 持續上升。因該耦合電感的變壓器電流關係,導致該第一疊加二極體的導通電流iD1 持續下降。The time t at which this stage starts is equal to the tenth start time t9, and the main switch S 1 is switched from non-conducting to conducting, achieving zero voltage switching. The current i Lk of this leakage inductance continues to rise. Due to the transformer current relationship of the coupled inductor, the on-current i D1 of the first superimposed diode continues to decrease.

當時間t等於該第十一開始時間t10,當該漏電感的電流iLk 上升至相等於該磁化電感的電流iLm (換言之,iLk =iLm )時,則該耦合電感的一第一繞組的電流iN1 等於零,使得該耦合電感的該第三繞組的電流iN3 等於零,該第一疊加二極體D1 轉態切換成不導通,本階段結束。When the time t is equal to the eleventh start time t10, when the current i Lk of the leakage inductance rises to be equal to the current i Lm of the magnetizing inductance (in other words, i Lk = i Lm ), then a first of the coupled inductance The current i N1 of the winding is equal to zero, so that the current i N3 of the third winding of the coupled inductor is equal to zero, and the first superimposed diode D 1 transitions to non-conduction, and this stage ends.

第十一階段[t:t10~t11]:The eleventh stage [t: t10~t11]:

參閱圖4及圖15,該主開關S1 為導通,該輔助開關S2 為不導通,該第一舉升二極體D3 及該第二舉升二極體D4 為導通,該第二疊加二極體D2 將由不導通轉為導通,該第一疊加二極體D1 及該輸出二極體D0 為不導通。4 and 15, the main switch S 1 is on, the auxiliary switch S 2 is off, the first lifting diode D 3 and the second lifting diode D 4 are on, the first The second superimposed diode D 2 will turn from non-conducting to conductive, and the first superimposed diode D 1 and the output diode D 0 are non-conducting.

本階段開始的時間t等於該第十一開始時間t10,該漏電感的電流iLk 持續上升,使得該漏電感的電流iLk 上升至大於該磁化電感的電流iLm (換言之,iLk >iLm ),因此該耦合電感的該第一繞組的電流iN1 大於零,同時產生該耦合電感之該第二繞組N2 的一感應電流,因此流經該第一舉升二極體D3 及該第二舉升二極體D4 的電流分別對該第一舉升電容C3 及該第二舉升電容C 充電。而串聯的該輸出電容C0 、該第一疊加電容C1 ,及該第二疊加電容C2 提供能量給該輸出負載RoThe time t at the beginning of this stage is equal to the eleventh start time t10, the current i Lk of the leakage inductance continues to rise, so that the current i Lk of the leakage inductance rises to be greater than the current i Lm of the magnetizing inductance (in other words, i Lk >i Lm ), so the current i N1 of the first winding of the coupled inductor is greater than zero, and at the same time an induced current of the second winding N 2 of the coupled inductor is generated, thus flowing through the first lifting diode D 3 and lifting the second current diode D 4 respectively on the first capacitor C 3 and the lifting of the second lift charging capacitor C 4. The output capacitor C 0 , the first superimposed capacitor C 1 , and the second superimposed capacitor C 2 connected in series provide energy to the output load R o .

當時間t等於該第十一結束時間t11,當該第二疊加電容C2 放電,使得該第二疊加電容C2 的跨壓VC2 等於該第三繞組N3 的跨壓,則該第二疊加二極體D2 轉態切換為導通,本階段結束。When the time t is equal to the eleventh end time t11, when the second superimposed capacitor C 2 is discharged, so that the cross voltage V C2 of the second superimposed capacitor C 2 is equal to the cross voltage of the third winding N 3 , the second The transition of the superimposed diode D 2 is turned on, and this stage ends.

上述之十一個階段完成後進入下一切換週期Ts ,重新開始第一階段電路動作。After the above eleventh stage is completed, it enters the next switching cycle T s and restarts the first stage circuit operation.

在做穩態電壓增益分析前,為了簡化分析,需基於以下的幾個假設前提下:Before doing steady-state voltage gain analysis, in order to simplify the analysis, it is necessary to base on the following assumptions:

假設一:忽略時間極短的暫態階段。Hypothesis 1: Ignore the transient phase with extremely short time.

假設二:因為該磁化電感Lm 遠大於該漏電感Lk ,忽略該漏電感Lk ,因此該耦合係數

Figure 02_image015
。Hypothesis 2: Because the magnetizing inductance L m is much larger than the leakage inductance L k , the leakage inductance L k is ignored, so the coupling coefficient
Figure 02_image015
.

假設三:轉換器中所有的電容夠大,忽略電容電壓漣波,使得電容的電(跨)壓可視為常數。Hypothesis 3: All the capacitors in the converter are large enough to ignore the voltage ripple of the capacitor, so that the electric (trans) voltage of the capacitor can be regarded as a constant.

假設四:該主開關S1 和該輔助開關S2 是互補式驅動,而且兩者之間有極短的盲時,由於盲時極短,若該主開關S1 有一導通比D,則輔助開關之導通比可視為1減該導通比D(換言之,1-D)。Hypothesis 4: The main switch S 1 and the auxiliary switch S 2 are complementary drives, and there is a very short blind time between the two. Because the blind time is extremely short, if the main switch S 1 has a conduction ratio D, the auxiliary The conduction ratio of the switch can be regarded as 1 minus the conduction ratio D (in other words, 1-D).

電壓增益分析:Voltage gain analysis:

在操作分析中可知該主開關S1 導通時,時間為該導通比D乘上該切換週期Ts ,換言之,有一主開關的導通時間DTs ,該磁化電感的跨壓VLm 等於該輸入電壓Vin 。該主開關S1 不導通時,時間為該切換週期Ts 減該主開關S1 導通DTs ,換言之,有一主開關的不導通時間為(1-D)Ts ,該磁化電感Lm 的跨壓VLm 等於負的該箝位電容的跨壓VCc (換言之,VLm =-VCc )。In the operation analysis, when the main switch S 1 is turned on, the time is the turn-on ratio D times the switching period T s , in other words, there is a turn-on time DT s of the main switch, and the voltage across the magnetizing inductance V Lm is equal to the input voltage V in . When the main switch S 1 is not conducting, the time is the switching period T s minus the main switch S 1 conducting DT s , in other words, the non-conducting time of a main switch is (1-D) T s , the magnetizing inductance L m The cross voltage V Lm is equal to the negative cross voltage V Cc of the clamp capacitor (in other words, V Lm =-V Cc ).

由於穩態時,電感器會滿足伏秒平衡定理(volt-second balance principle),即電感器在該切換週期Ts 內的平均電壓為零,因此,Since at steady state, the inductor will satisfy the volt-second balance principle, that is, the average voltage of the inductor in the switching period T s is zero, therefore,

Figure 02_image017
…式四
Figure 02_image017
...Form four

整理可得該箝位電容電壓VCcAfter finishing, the clamping capacitor voltage V Cc is

Figure 02_image019
…式五
Figure 02_image019
...Form five

在第一階段的線性電路圖(如圖5所示),可知該耦合電感的該第一繞組的跨壓VN1In the linear circuit diagram of the first stage (as shown in FIG. 5), it can be seen that the voltage across the first winding V N1 of the coupled inductor is

Figure 02_image021
…式六
Figure 02_image021
…Form 6

同時,在該電壓舉升單元2中的該第一舉升電容的跨壓VC3 及該第二舉升電容的跨壓VC4 ,可藉由該耦合電感的該第一繞組的跨壓VN1 的反射到該第二繞組的跨壓VN2 推導而得到。該第一舉升電容的跨壓VC3 及該第二舉升電容的跨壓VC4At the same time, the voltage across the first lifting capacitor V C3 and the voltage across the second lifting capacitor V C4 in the voltage lifting unit 2 can be determined by the voltage across the first winding of the coupling inductor The cross voltage V N2 reflected from N1 to the second winding is derived. The cross voltage V C3 of the first lifting capacitor and the cross voltage V C4 of the second lifting capacitor are

Figure 02_image023
…式七
Figure 02_image023
...Form seven

另一方面,該電壓疊加單元3中的該第二疊加電容的跨壓VC2On the other hand, the cross voltage V C2 of the second superposition capacitor in the voltage superposition unit 3 is

Figure 02_image025
…式八
Figure 02_image025
Form 8

在第六階段的線性電路(如圖10所示),可知該耦合電感的該第一繞組N1 的跨壓VN1In the linear circuit of the sixth stage (as shown in FIG. 10), it can be seen that the cross-voltage V N1 of the first winding N 1 of the coupled inductor is

Figure 02_image027
…式九
Figure 02_image027
...Form nine

在該電壓疊加單元3中的該第一疊加電容的跨壓VC1The cross voltage V C1 of the first superposition capacitor in the voltage superposition unit 3 is

Figure 02_image029
…式十
Figure 02_image029
...Form ten

將式五代入式十,可得該第一疊加電容的跨壓VC1Substituting equation 5 into equation 10, the voltage V C1 of the first superimposed capacitor is

Figure 02_image031
…式十一
Figure 02_image031
...Form eleven

另一方面,在第六階段的線性電路(如圖10所示),利用克希荷夫電壓定律,可得到該輸出電容的跨壓VC0On the other hand, in the linear circuit of the sixth stage (as shown in Fig. 10), using Kirchhoff's voltage law, the cross-voltage V C0 of the output capacitor can be obtained as

Figure 02_image033
…式十二
Figure 02_image033
...Form twelve

將式七及式九代入式十二,可得該輸出電容的跨壓VC0Substituting Equation 7 and Equation 9 into Equation 12, the voltage across the output capacitor V C0 is

Figure 02_image035
…式十三
Figure 02_image035
…Form XIII

整理可得該輸出電容的跨壓VC0 的表示式為After finishing, the expression of the voltage across the output capacitor V C0 is

Figure 02_image037
…式十四
Figure 02_image037
...Form fourteen

因為該輸出電壓Vo 是三個電容的電壓總和,所以Because the output voltage Vo is the sum of the voltages of the three capacitors, so

Figure 02_image039
…式十五
Figure 02_image039
… Formula fifteen

整理可得該輸出電壓Vo 表示式為After finishing, the output voltage V o can be expressed as

Figure 02_image041
…式十六
Figure 02_image041
...Style sixteen

因此本發明高升壓直流轉換器的一電壓增益M可表示為Therefore, a voltage gain M of the high boost DC converter of the present invention can be expressed as

Figure 02_image043
…式十七
Figure 02_image043
…Form XVII

從上式可知電壓增益,具有該耦合電感匝數比n及該導通比D兩個設計自由度。本發明高升壓直流轉換器可藉由適當設計該耦合電感匝數比n,達到高升壓比,且不必操作在極大的導通比D。It can be seen from the above formula that the voltage gain has two design degrees of freedom, the coupling inductance turns ratio n and the conduction ratio D. The high boost DC converter of the present invention can achieve a high boost ratio by properly designing the coupling inductance turns ratio n, and does not need to operate at a very large conduction ratio D.

參閱圖16,為對應於該耦合電感匝數比n及該導通比D的電壓增益曲線,當該導通比D等於0.6且該耦合電感匝數比n等於1時,該電壓增益M為5.5,當該導通比D等於0.6且該耦合電感匝數比n等於3時,該電壓增益M為20.5。Referring to FIG. 16, it is a voltage gain curve corresponding to the turns ratio n of the coupled inductor and the conduction ratio D. When the conduction ratio D is equal to 0.6 and the turns ratio n of the coupled inductor is equal to 1, the voltage gain M is 5.5, When the conduction ratio D is equal to 0.6 and the coupled inductor turns ratio n is equal to 3, the voltage gain M is 20.5.

開關元件的電壓應力分析:Switching element voltage stress analysis:

由第一階段可知該輔助開關S2 的電壓應力為From the first stage, the voltage stress of the auxiliary switch S 2 is

Figure 02_image045
…式十八
Figure 02_image045
Form 18

同理,由第六階段可之該主開關S1 的電壓應力為Similarly, from the sixth stage, the voltage stress of the main switch S 1 is

Figure 02_image047
…式十九
Figure 02_image047
Form 19

本發明高升壓直流轉換器的開關電壓應力僅為該輸出電壓Vo 的1/(1+3n-nD)倍,隨著該耦合電感匝數比n增加,開關電壓應力大幅減小,遠低於該輸出電壓Vo ,因此可使用低額定耐壓之具有較低導通電阻Rds (ON) 的金屬氧化物半導體場效應電晶體(MOSFET)當開關,以降低開關導通損失,提升轉換器整體效率。The present invention is a high voltage stress switching boost converter DC output voltage V o is only a 1 / (1 + 3n-nD ) times, with the coupled inductors turns ratio increased n, the switch voltage stress is greatly reduced, far It is lower than the output voltage V o , so a metal oxide semiconductor field effect transistor (MOSFET) with a low on-state resistance and a low on-resistance Rds (ON) can be used as a switch to reduce the switch conduction loss and improve the converter Overall efficiency.

二極體元件的電壓應力分析:Diode voltage stress analysis:

從電路動作分析的第一階段可知該第一疊加二極體D1 的電壓應力為From the first stage of circuit operation analysis, the voltage stress of the first superimposed diode D 1 is

Figure 02_image049
…式二十
Figure 02_image049
...Form twenty

而該輸出二極體D0 的電壓應力為The voltage stress of the output diode D 0 is

Figure 02_image051
…式二十一
Figure 02_image051
… Formula 21

從電路動作分析的第六階段可知該第一舉升二極體D3 的電壓應力為From the sixth stage of circuit operation analysis, the voltage stress of the first lifting diode D 3 is

Figure 02_image053
…式二十二
Figure 02_image053
… Formula 22

該第二舉升二極體D4 的電壓應力為The voltage stress of the second lifting diode D 4 is

Figure 02_image055
…式二十三
Figure 02_image055
… Formula 23

該第二疊加二極體D2 的電壓應力為The voltage stress of the second superimposed diode D 2 is

Figure 02_image057
…式二十四
Figure 02_image057
… Formula 24

由上述之式二十~式二十四,以及該電壓增益M(式十七)可知,該第一疊加二極體D1 、該第二疊加二極體D2 、該第一舉升二極體D3 、該第二舉升二極體D4 ,及該輸出二極體D0 皆具有遠低於該輸出電壓Vo 的低電壓應力,因此二極體可以選擇低額定耐壓之具有低導通壓降的蕭特基二極體,降低導通損失,提升轉換器整體效率。From the above formula 20 to formula 24, and the voltage gain M (formula 17), it can be seen that the first superimposed diode D 1 , the second superimposed diode D 2 , and the first lift two The diode D 3 , the second lifting diode D 4 , and the output diode D 0 all have a low voltage stress far lower than the output voltage V o , so the diode can choose a low rated withstand voltage Schottky diodes with low turn-on voltage drop reduce conduction losses and improve overall converter efficiency.

實驗模擬驗證:Experimental simulation verification:

參閱圖17,首先驗證轉換器之穩態特性,滿載400瓦(W)時,該輸入電壓Vin 等於24伏特(V),及該輸出電壓Vo 等於380伏特,與分別控制該主開關S1 與該輔助開關S2 的一第一脈波調變信號的電壓vgs1 及一第二脈波調變信號的電壓vgs2 ,本發明高升壓直流轉換器之該電壓增益M約為15.8倍,根據式十七,當該導通比D為0.52時,模擬結果的該導通比M符合分析結果。驗證本發明高升壓直流轉換器具有高電壓增益但不必操作在極大導通比。Referring to Figure 17, first verify that the steady-state characteristic of the converter, when the full 400 watts (W), the input voltage V in is equal to 24 volts (V), and the output voltage V o is equal to 380 volts, respectively for controlling the main switch S voltages v 1 and a first pulse modulation signal S 2 of the auxiliary switch voltage V GS1 and a second pulse modulation signal gs2, the present invention is a high-DC converter of the boost voltage gain of approximately 15.8 M Times, according to Equation 17, when the conduction ratio D is 0.52, the conduction ratio M of the simulation result conforms to the analysis result. It is verified that the high-boost DC converter of the present invention has a high voltage gain but does not have to operate at a very large turn-on ratio.

參閱圖18,滿載400瓦時,分別控制該主開關S1 與該輔助開關S2 的該第一脈波調變信號的電壓vgs1 、該第二脈波調變信號的電壓vgs2 、該主開關的跨壓vds1 ,及一輔助開關的跨壓vds2 ,根據開關元件的電壓應力分析之理論值約為57伏特,模擬波形之開關元件的電壓應力大約為59伏特,因此開關元件的電壓應力僅約為該輸出電壓Vo 的六分之一。模擬結果大致符合分析結果,驗證本發明高升壓直流轉換器的功率開關具有低電壓應力的優點,可使用低額定耐壓之具有較低導通電阻Rds (ON) 的金屬氧化物半導體場效應電晶體,以降低開關導通損失,提升轉換器整體效率。Referring to Figure 18, when the full 400 watts, respectively, of the main control switch S 1 is the first voltage v GS1 pulse modulation signal of the auxiliary switch S 2, and voltage v of the second pulse modulation signal GS2, which The voltage across the main switch v ds1 and the voltage across the auxiliary switch v ds2 are about 57 volts based on the analysis of the voltage stress of the switching element. The voltage stress of the analog waveform of the switching element is about 59 volts. voltage stress of only about one-sixth of the output voltage V o. The simulation results are roughly in line with the analysis results, verifying that the power switch of the high-boost DC converter of the present invention has the advantage of low voltage stress, and can use a metal oxide semiconductor field effect with a low on-voltage resistance and a low on-resistance R ds (ON) Transistor to reduce the switch conduction loss and improve the overall efficiency of the converter.

參閱圖19,為滿載400瓦時,該主開關S1 與該輔助開關S2 的零電壓切換波形,可看出該主開關S1 及一輔助開關S2 在切換為導通之前,該主開關S1 的跨壓vds1 及該輔助開關S2 的跨壓vds2 均已降至零,確實達到零電壓切換操作,降低切換損失。Referring to FIG. 19, it is the zero-voltage switching waveform of the main switch S 1 and the auxiliary switch S 2 at a full load of 400 watt-hours. It can be seen that the main switch S 1 and an auxiliary switch S 2 before the switch is turned on, the main switch Both the cross-over voltage v ds1 of S 1 and the cross-over voltage v ds2 of the auxiliary switch S 2 have been reduced to zero, indeed reaching zero voltage switching operation, reducing switching losses.

參閱圖20,為滿載400瓦時,流經該第一疊加二極體D1 、該第二疊加二極體D2 、該第一舉升二極體D3 、該第二舉升二極體D4 ,及該輸出二極體D0 的電流波形,由分析可知該漏電感Lk 能緩和二極體電流下降的速率。由圖可知二極體的電流下降至零之後,幾乎沒有反向恢復電流的產生,因此可降低二極體反向恢復損失。Referring to FIG. 20, for a full load of 400 watt hours, flowing through the first superimposed diode D 1 , the second superimposed diode D 2 , the first hoisted diode D 3 , the second hoisted diode The body D 4 and the current waveform of the output diode D 0 can be analyzed to find that the leakage inductance L k can alleviate the rate of decrease of the diode current. It can be seen from the figure that after the diode current drops to zero, there is almost no reverse recovery current, so the diode reverse recovery loss can be reduced.

參閱圖21,為滿載400瓦時,該第一疊加二極體D1 、該第二疊加二極體D2 、該第一舉升二極體D3 、該第二舉升二極體D4 ,及該輸出二極體D0 的電壓應力波形。由圖可知,該第一疊加二極體D1 、該第二疊加二極體D2 、該第一舉升二極體D3 、該第二舉升二極體D4 ,及該輸出二極體D0 的跨壓最大值,即電壓應力都遠低於輸出電壓380伏特,模擬結果符合分析結果。Referring to FIG. 21, for a full load of 400 watt hours, the first superimposed diode D 1 , the second superimposed diode D 2 , the first lifted diode D 3 , and the second lifted diode D 4 , and the voltage stress waveform of the output diode D0 . It can be seen from the figure that the first superimposed diode D 1 , the second superimposed diode D 2 , the first lifted diode D 3 , the second lifted diode D 4 , and the output two The maximum voltage across the pole body D 0 , that is, the voltage stress is much lower than the output voltage of 380 volts, the simulation results are consistent with the analysis results.

綜上所述,上述實施例具有以下優點:In summary, the above embodiments have the following advantages:

1. 由第一至第三繞組N1 ~N3 所組成的耦合電感的匝數比n增加了電壓增益M的設計自由度,所以高電壓增益的達成,該主開關S1 不必操作在極大的導通比。1. The turns ratio of the coupled inductor composed of the first to third windings N 1 ~N 3 increases the design freedom of the voltage gain M, so the main switch S 1 does not need to operate at a maximum The turn-on ratio.

2. 由於該箝位電容Cc 與該輔助開關S2 形成一主動箝位電路,使該主開關S1 與該輔助開關S2 皆能達到零電壓切換之柔切性能,所以能夠降低其切換損失。2. Since the clamping capacitor C c and the auxiliary switch S 2 form an active clamping circuit, both the main switch S 1 and the auxiliary switch S 2 can achieve the soft cut performance of zero voltage switching, so the switching can be reduced loss.

3. 由於該主開關S1 與該輔助開關S2 的電壓應力遠低於該輸出電壓Vo ,因此可使用低額定耐壓之具有較低導通電阻Rds (ON) 的金屬氧化物半導體場效應電晶體來實現,以降低其導通損失。3. Since the voltage stress of the main switch S 1 and the auxiliary switch S 2 is much lower than the output voltage V o , a metal oxide semiconductor field with a low on-state resistance and a low on-resistance R ds (ON) can be used The effect transistor is implemented to reduce its conduction loss.

4. 該耦合電感的漏電感能有效地緩和該第一疊加二極體D1 、該第二疊加二極體D2 、該第一舉升二極體D3 、該第二舉升二極體D4 ,及該輸出二極體D0 之反向恢復電流的問題。4. The leakage inductance of the coupled inductor can effectively ease the first superimposed diode D 1 , the second superimposed diode D 2 , the first hoisted diode D 3 , the second hoisted diode Body D 4 , and the reverse recovery current of the output diode D 0 .

5. 漏電感能量能夠回收再利用,不但能改善效率,也能避免該主開關S1 和該輔助開關S2 切換為不導通時所造成的電壓突波問題。5. The leakage inductance energy can be recovered and reused, which not only improves the efficiency, but also avoids the voltage surge problem caused when the main switch S 1 and the auxiliary switch S 2 are switched off.

惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。However, the above are only examples of the present invention, and the scope of implementation of the present invention cannot be limited by this, any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still classified as Within the scope of the invention patent.

2:電壓舉升單元 3:電壓疊加單元 4:控制單元 N1:第一繞組 N2:第二繞組 N3:第三繞組 S1:主開關 S2:輔助開關 Cr:箝位電容 Cc:箝位電容 C0:主開關的寄生電容 C1:第一疊加電容 C2:第二疊加電容 C3:第一舉升電容 C4:第二舉升電容 D0:輸出二極體 D1:第一疊加二極體 D2:第二疊加二極體 D3:第一舉升二極體 D4:第二舉升二極體 Ro:輸出負載 Vin:輸入電壓 Vo:輸出電壓 Lm:磁化電感 Lk:漏電感 VCr:寄生電容的跨壓 VCc:箝位電容的跨壓 VC0:輸出電容的跨壓 VC1:第一疊加電容的跨壓 VC2:第二疊加電容的跨壓 VC3:第一舉升電容的跨壓 VC4:第二舉升電容的跨壓 vgs1:第一脈波調變信號的電壓 vgs2:第二脈波調變信號的電壓 vds1:主開關的跨壓 vds2:輔助開關的跨壓 Ts:切換週期 t:時間 t0~t10:第一開始時間~第十一開始時間 t11:第十一結束時間 iIn:輸入電流 io:輸出電流 iS1:主開關的導通電流 iS2:輔助開關的導通電流 iD0:輸出二極體的導通電流 iD1:第一疊加二極體的導通電流 iD2:第二疊加二極體的導通電流 iD3:第一舉升二極體的導通電流 iD4:第二舉升二極體的導通電流 iLm:磁化電感的電流 iLk:漏電感的電流 n:耦合電感匝數比 2: Voltage lifting unit 3: Voltage superposition unit 4: Control unit N 1 : First winding N 2 : Second winding N 3 : Third winding S 1 : Main switch S 2 : Auxiliary switch C r : Clamp capacitor C c: the clamp capacitor C 0: main switch parasitic capacitance C 1: superimposing a first capacitor C 2: superimposing a second capacitor C 3: a first lifting capacitance C 4: lifting the second capacitor D 0: output diode D 1 : First superimposed diode D 2 : Second superimposed diode D 3 : First lifted diode D 4 : Second lifted diode R o : Output load V in : Input voltage V o : Output voltage L m : Magnetizing inductance L k : Leakage inductance V Cr : Parasitic capacitance across voltage V Cc : Clamp capacitance across voltage V C0 : Output capacitance across voltage V C1 : First overlay capacitance across voltage V C2 : Cross-voltage V C3 of the second superimposed capacitor: Cross-voltage V C4 of the first lifting capacitor: Cross-voltage V gs1 of the second lifting capacitor: Voltage of the first pulse modulation signal v gs2 : Second pulse modulation Voltage of variable signal v ds1 : Overvoltage of main switch v ds2 : Overvoltage of auxiliary switch T s : Switching period t: Time t0~t10: First start time ~ Eleventh start time t11: Eleventh end time i In : input current i o : output current i S1 : on-current of the main switch i S2 : on-current of the auxiliary switch i D0 : on-current of the output diode i D1 : on-current of the first superimposed diode i D2 : On-state current i D3 of the second superimposed diode: On-state current i of the first lifting diode D4 : On-state current i of the second lifting diode i Lm : Current i of the magnetizing inductor i Lk : Current n of the leakage inductor : Turn ratio of coupled inductance

本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是習知的升壓轉換器的一電路圖; 圖2是本發明高升壓直流轉換器之一實施例的一電路圖; 圖3是該實施例的一等效電路圖; 圖4是該實施例的一操作時序圖; 圖5是該實施例操作於第一階段的一電路圖; 圖6是該實施例操作於第二階段的一電路圖; 圖7是該實施例操作於第三階段的一電路圖; 圖8是該實施例操作於第四階段的一電路圖; 圖9是該實施例操作於第五階段的一電路圖; 圖10是該實施例操作於第六階段的一電路圖; 圖11是該實施例操作於第七階段的一電路圖; 圖12是該實施例操作於第八階段的一電路圖; 圖13是該實施例操作於第九階段的一電路圖; 圖14是該實施例操作於第十階段的一電路圖; 圖15是該實施例操作於第十一階段的一電路圖; 圖16是耦合電感匝數比及導通比的一電壓增益曲線圖; 圖17是開關的驅動信號、輸入電壓與輸出電壓的一波形圖; 圖18是開關驅動信號與開關之跨壓的一波形圖; 圖19是開關驅動信號與開關之跨壓的另一波形圖; 圖20是二極體的一電流波形圖;及 圖21是二極體的一跨壓波形圖。Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: FIG. 1 is a circuit diagram of a conventional boost converter; FIG. 2 is a high boost DC converter of the present invention. A circuit diagram of an embodiment; FIG. 3 is an equivalent circuit diagram of the embodiment; FIG. 4 is an operation timing diagram of the embodiment; FIG. 5 is a circuit diagram of the embodiment in the first stage of operation; FIG. 6 is the circuit diagram of the embodiment A circuit diagram of the embodiment operating in the second stage; FIG. 7 is a circuit diagram of the embodiment operating in the third stage; FIG. 8 is a circuit diagram of the embodiment operating in the fourth stage; FIG. 9 is a circuit diagram of the embodiment operating in the A circuit diagram of five stages; FIG. 10 is a circuit diagram of the embodiment operating in the sixth stage; FIG. 11 is a circuit diagram of the embodiment operating in the seventh stage; FIG. 12 is a circuit diagram of the embodiment operating in the eighth stage FIG. 13 is a circuit diagram of the embodiment operating in the ninth stage; FIG. 14 is a circuit diagram of the embodiment operating in the tenth stage; FIG. 15 is a circuit diagram of the embodiment operating in the eleventh stage; FIG. 16 is A voltage gain curve diagram of the turns ratio and conduction ratio of the coupled inductor; FIG. 17 is a waveform diagram of the drive signal, input voltage and output voltage of the switch; FIG. 18 is a waveform diagram of the voltage across the drive signal of the switch and the switch; 19 is another waveform diagram of the switch driving signal and the cross voltage of the switch; FIG. 20 is a current waveform diagram of the diode; and FIG. 21 is a waveform diagram of the diode voltage.

2:電壓舉升單元 2: Voltage lifting unit

3:電壓疊加單元 3: Voltage superposition unit

4:控制單元 4: control unit

N1:第一繞組 N 1 : first winding

N2:第二繞組 N 2 : second winding

N3:第三繞組 N 3 : third winding

S1:主開關 S 1 : Main switch

S2:輔助開關 S 2 : auxiliary switch

C2:第二疊加電容 C 2 : second superposition capacitor

C3:第一舉升電容 C 3 : First lifting capacitor

C4:第二舉升電容 C 4 : Second lifting capacitor

D0:輸出二極體 D 0 : output diode

D1:第一疊加二極體 D 1 : first superimposed diode

D2:第二疊加二極體 D 2 : Second superimposed diode

D3:第一舉升二極體 D 3 : First lift diode

D4:第二舉升二極體 D 4 : Second lift diode

Cc:箝位電容 C c : clamping capacitance

C0:輸出電容 C 0 : output capacitance

C1:第一疊加電容 C 1 : the first superimposed capacitor

Ro:輸出負載 R o : output load

Vin:輸入電壓 V in : input voltage

Vo:輸出電壓 V o : output voltage

Claims (8)

一種高升壓直流轉換器,包含: 一第一繞組,該第一繞組具有一電連接一輸入電壓之陽極的第一端,及一電連接一第一共同接點的第二端; 一主開關,具有一電連接該第一共同接點的第一端及一接地的第二端,且該主開關受控在一導通狀態及一不導通狀態間切換; 一輔助開關,具有一第一端及一電連接該第一共同接點的第二端,且該輔助開關受控在一導通狀態及一不導通狀態間切換; 一箝位電容,具有一電連接該輔助開關之第一端的第一端,及一電連接該輸入電壓之陽極的第二端; 一電壓舉升單元,具有一電連接該第一共同接點的舉升輸入端,及一舉升輸出端,用以將來自該第一繞組的一感應電壓進行升壓,而產生一舉升電壓從其舉升輸出端輸出,該電壓舉升單元包括 一第一舉升電容,具有一電連接該舉升輸入端的第一端及一第二端; 一第二繞組,具有一電連接該第一舉升電容之第二端的第一端及一第二端; 一第二舉升電容,具有一電連接該第二繞組之第二端的第一端,及一電連接該舉升輸出端的第二端; 一第一舉升二極體,具有一電連接該第二繞組之第一端的陽極,及一電連接該舉升輸出端的陰極;及 一第二舉升二極體,具有一電連接該舉升輸入端的陽極,及一電連接該第二繞組之第二端的陰極; 一輸出二極體,具有一電連接該舉升輸出端之第二端的陽極,及一電連接一第二共同接點的陰極; 一輸出電容,具有一電連接該第二共同接點的第一端,及一接地的第二端,當該輸出二極體導通時,接收來自該舉升電壓的充電而產生一正比該舉升電壓的電容電壓;及 一電壓疊加單元,電連接該第二共同接點以串聯於該輸出電容,且將來自該第一繞組的該感應電壓進行升壓,而產生一疊加電壓,該疊加電壓與該電容電壓加總而產生一輸出電壓,該電壓疊加單元包括 一第一疊加二極體,具有一電連接該第二共同接點的陽極及一陰極; 一第三繞組,具有一電連接該第一疊加二極體之陰極的第一端及一第二端; 一第一疊加電容,具有一電連接該第三繞組之第二端的第一端,及一電連接該第二共同接點的第二端; 一第二疊加二極體,具有一電連接該第一疊加二極體之陰極的陽極及一陰極;及 一第二疊加電容,具有一電連接該第二疊加二極體之陰極的第一端,及一電連接該第一疊加電容之第一端的第二端。A high-boost DC converter includes: a first winding having a first end electrically connected to an anode of an input voltage, and a second end electrically connected to a first common contact; a main The switch has a first end electrically connected to the first common contact and a second end grounded, and the main switch is controlled to switch between a conducting state and a non-conducting state; an auxiliary switch has a first And a second terminal electrically connected to the first common contact, and the auxiliary switch is controlled to switch between a conducting state and a non-conducting state; a clamping capacitor has a first end electrically connected to the auxiliary switch The first end of the power supply, and a second end of the anode electrically connected to the input voltage; a voltage lifting unit having a lifting input terminal electrically connected to the first common contact, and a lifting output terminal An induced voltage from the first winding is boosted, and a lifting voltage is generated and output from its lifting output terminal. The voltage lifting unit includes a first lifting capacitor with a first electrically connected to the lifting input terminal End and a second end; a second winding with a first end electrically connected to the second end of the first lifting capacitor and a second end; a second lifting capacitor with an electrically connected second winding The first end of the second end, and a second end electrically connected to the lifting output end; a first lifting diode having an anode electrically connected to the first end of the second winding, and an electrically connected to the The cathode of the lifting output; and a second lifting diode with an anode electrically connected to the lifting input, and a cathode electrically connected to the second end of the second winding; an output diode with an electric An anode connected to the second end of the lifting output, and a cathode electrically connected to a second common contact; an output capacitor having a first end electrically connected to the second common contact, and a grounded second Terminal, when the output diode is turned on, receiving charging from the lifting voltage to generate a capacitor voltage proportional to the lifting voltage; and a voltage superimposing unit, electrically connected to the second common contact to be connected in series to the output A capacitor, and boosting the induced voltage from the first winding to generate a superimposed voltage, the superimposed voltage and the capacitor voltage are added to generate an output voltage, the voltage superimposing unit includes a first superimposed diode , Has an anode and a cathode electrically connected to the second common contact; a third winding has a first end and a second end electrically connected to the cathode of the first superposed diode; a first superposed capacitor With a first end electrically connected to the second end of the third winding, and a second end electrically connected to the second common contact; a second superimposed diode with an electrically connected to the first superimposed diode An anode of the body cathode and a cathode; and a second superimposed capacitor having a first end electrically connected to the cathode of the second superimposed diode and a second end electrically connected to the first end of the first superimposed capacitor end. 如請求項1所述的高升壓直流轉換器,其中,該第一繞組的第一端是打點端,該第一繞組的第二端是非打點端。The high-boost DC converter according to claim 1, wherein the first end of the first winding is a dotted end, and the second end of the first winding is a non-dotted end. 如請求項1所述的高升壓直流轉換器,其中,該第二繞組的第一端是打點端,該第二繞組的第二端是非打點端。The high-boost DC converter according to claim 1, wherein the first end of the second winding is a dotted end, and the second end of the second winding is a non-dotted end. 如請求項1所述的高升壓直流轉換器,其中,該第三繞組的第一端是打點端,該第三繞組的第二端是非打點端。The high-boost DC converter according to claim 1, wherein the first end of the third winding is a dotted end, and the second end of the third winding is a non-dotted end. 如請求項1所述的高升壓直流轉換器,其中,該主開關是一N型功率半導體電晶體,且該主開關的第一端是汲極,該主開關的第二端是源極。The high-boost DC converter according to claim 1, wherein the main switch is an N-type power semiconductor transistor, and the first end of the main switch is a drain, and the second end of the main switch is a source . 如請求項1所述的高升壓直流轉換器,其中,該輔助開關是一N型功率半導體電晶體,且該輔助開關的第一端是汲極,該輔助開關的第二端是源極。The high-boost DC converter according to claim 1, wherein the auxiliary switch is an N-type power semiconductor transistor, and the first end of the auxiliary switch is a drain, and the second end of the auxiliary switch is a source . 如請求項1所述的高升壓直流轉換器還包含一控制單元,該控制單元產生一切換該主開關的第一脈波調變信號及一切換該輔助開關的第二脈波調變信號。The high-boost DC converter according to claim 1 further includes a control unit that generates a first pulse modulation signal that switches the main switch and a second pulse modulation signal that switches the auxiliary switch . 如請求項7所述的高升壓直流轉換器,其中,該主開關的導通時間的不重疊於與該輔助開關的導通時間。The high-boost DC converter according to claim 7, wherein the on-time of the main switch does not overlap with the on-time of the auxiliary switch.
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