TWI792944B - High Boost DC Converter Device - Google Patents

High Boost DC Converter Device Download PDF

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TWI792944B
TWI792944B TW111109485A TW111109485A TWI792944B TW I792944 B TWI792944 B TW I792944B TW 111109485 A TW111109485 A TW 111109485A TW 111109485 A TW111109485 A TW 111109485A TW I792944 B TWI792944 B TW I792944B
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winding
voltage
diode
capacitor
output
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TW202339405A (en
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陳信助
楊松霈
黃昭明
張家慈
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崑山科技大學
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Abstract

一種高升壓直流轉換器裝置,包含第一耦合電感、第二耦合電感、二個開關、箝位二極體、一舉升電容、第一倍壓電容、第二倍壓二極體、第二倍壓電容、第一輸出級、第二輸出級、第三輸出級。輸入並聯架構可分擔輸入電流,故適用於高輸入電流的應用。第一開關及第二開關採用交錯式操作,可使耦合電感的一次側之漣波電流具有相消作用,可降低輸入電流漣波。第一倍壓電容、第二倍壓二極體、第二倍壓電容提供電壓倍增功能,利用舉升電容及三個耦合電感進行電壓倍增且更與一第一輸出級與第二輸出級與第三輸出級疊加輸出,更加提升電壓增益。A high boost DC converter device, comprising a first coupling inductor, a second coupling inductor, two switches, a clamping diode, a lifting capacitor, a first voltage doubler capacitor, a second voltage doubler diode, a second voltage doubler A double voltage capacitor, a first output stage, a second output stage, and a third output stage. The input parallel architecture can share the input current, so it is suitable for high input current applications. The first switch and the second switch are operated in an interleaved manner, so that the ripple current on the primary side of the coupled inductor has a canceling effect, and the input current ripple can be reduced. The first voltage doubler capacitor, the second voltage doubler diode, and the second voltage doubler capacitor provide the voltage doubling function, and use the lifting capacitor and three coupled inductors to perform voltage doubling and further connect with a first output stage and a second output The superimposed output of the stage and the third output stage further increases the voltage gain.

Description

高升壓直流轉換器裝置High Boost DC Converter Device

本發明是有關於一種電壓轉換技術,特別是指一種高升壓直流轉換器裝置。The invention relates to a voltage conversion technology, in particular to a high boost DC converter device.

參閱圖1,一種習知的升壓轉換器,習知的升壓轉換器操作在極高導通比才能達到較高電壓增益

Figure 02_image001
,參數V O、V in、D分別為輸出電壓、輸入電壓、開關的責任導通比,但是實務上受到寄生元件的影響,當導通比超過0.9以上時而使電壓增益不增反減,不符高電壓增益的需求,因此,無需極高導通比且同時為符合高電壓增益的需求的高升壓轉換器是未來的研究方向。 Referring to Figure 1, a conventional boost converter, the conventional boost converter operates at a very high conduction ratio to achieve high voltage gain
Figure 02_image001
, the parameters V O , V in , and D are the output voltage, input voltage, and duty conduction ratio of the switch, but in practice, they are affected by parasitic elements. When the conduction ratio exceeds 0.9, the voltage gain does not increase but decreases, which is inconsistent with high The demand for voltage gain, therefore, a high boost converter that does not require a very high conduction ratio and at the same time meets the demand for high voltage gain is a future research direction.

因此,本發明的一目的,即在提供一種能夠克服先前技術缺點的高升壓直流轉換器裝置。Therefore, an object of the present invention is to provide a high-boost DC converter device capable of overcoming the disadvantages of the prior art.

於是,高升壓直流轉換器裝置包括一個第一耦合電感、一個第二耦合電感、一第一開關、一第二開關、一箝位二極體、一舉升電容、第一再生二極體、一第一再生電容、一第一倍壓二極體、一第一倍壓電容、一第二再生二極體、一第二再生電容、一第二倍壓二極體、一第二倍壓電容、一第一輸出級、一第二輸出級與一第三輸出級。Therefore, the high boost DC converter device includes a first coupled inductor, a second coupled inductor, a first switch, a second switch, a clamping diode, a lifting capacitor, a first regenerative diode, A first regenerative capacitor, a first voltage doubler diode, a first voltage doubler capacitor, a second regenerative diode, a second regenerative capacitor, a second voltage doubler diode, a second doubler piezocapacitor, a first output stage, a second output stage and a third output stage.

每一個耦合電感具有一第一繞組、一第二繞組及一第三繞組,每一個繞組具有一第一端及一第二端,其中,該第一耦合電感的第一繞組的第一端與該第二耦合電感的第二繞組的第一端電連接一起以接收一呈直流的輸入電壓,該第一耦合電感的第二繞組的第二端電連接該第二耦合電感的第二繞組的第二端,該第一耦合電感的第三繞組的第二端電連接該第二耦合電感的第三繞組的第二端。Each coupled inductor has a first winding, a second winding and a third winding, and each winding has a first end and a second end, wherein the first end of the first winding of the first coupled inductor is connected to the The first end of the second winding of the second coupled inductor is electrically connected together to receive a DC input voltage, and the second end of the second winding of the first coupled inductor is electrically connected to the second winding of the second coupled inductor. The second end, the second end of the third winding of the first coupled inductor is electrically connected to the second end of the third winding of the second coupled inductor.

第一開關具有一電連接於該第一耦合電感的第一繞組的第二端的第一端,及一接地的第二端,且該第一開關受控制以切換於導通狀態和不導通狀態間,當該第一開關導通時,該第一耦合電感的第一繞組接收一電流進行充電。第二開關具有一電連接於該第二耦合電感的第一繞組的第二端的第一端,及一接地的第二端,且該第二開關受控制以切換於導通狀態和不導通狀態間。The first switch has a first end electrically connected to the second end of the first winding of the first coupled inductor, and a second end that is grounded, and the first switch is controlled to switch between a conduction state and a non-conduction state , when the first switch is turned on, the first winding of the first coupled inductor receives a current for charging. The second switch has a first end electrically connected to the second end of the first winding of the second coupled inductor, and a second end that is grounded, and the second switch is controlled to switch between a conduction state and a non-conduction state .

箝位二極體具有一電連接於該第二耦合電感的第一繞組的第二端的陽極,與一陰極。舉升電容電連接該第一耦合電感的第一繞組的第二端與該箝位二極體的陰極間。The clamping diode has an anode electrically connected to the second end of the first winding of the second coupled inductor, and a cathode. The lifting capacitor is electrically connected between the second end of the first winding of the first coupled inductor and the cathode of the clamping diode.

第一再生二極體具有一電連接該第二耦合電感的第二繞組的第一端的陽極,與一陰極。第一再生電容電連接該第一耦合電感的第二繞組的第一端與該第一再生二極體的陰極之間。第一倍壓二極體具有一電連接該第一再生二極體的陰極的陽極,與一陰極。第一倍壓電容電連接該該第二耦合電感的第二繞組的第一端與該第一倍壓二極體的陰極之間。The first regenerative diode has an anode electrically connected to the first end of the second winding of the second coupled inductor, and a cathode. The first regenerative capacitor is electrically connected between the first end of the second winding of the first coupled inductor and the cathode of the first regenerative diode. The first voltage doubler diode has an anode electrically connected to the cathode of the first regenerative diode, and a cathode. The first voltage doubler capacitor is electrically connected between the first end of the second winding of the second coupling inductor and the cathode of the first voltage doubler diode.

第二再生二極體具有一電連接該第一耦合電感的第三繞組的第一端的陽極,與一陰極。第二再生電容電連接該第二耦合電感的第三繞組的第一端與該第二再生二極體的陰極之間。第二倍壓二極體具有一電連接該第二再生二極體的陰極的陽極,與一陰極。第二倍壓電容電連接該第一耦合電感的第三繞組的第一端與該第二倍壓二極體的陰極之間。The second regenerative diode has an anode electrically connected to the first end of the third winding of the first coupled inductor, and a cathode. The second regenerative capacitor is electrically connected between the first end of the third winding of the second coupling inductor and the cathode of the second regenerative diode. The second voltage doubler diode has an anode electrically connected to the cathode of the second regenerative diode, and a cathode. The second voltage doubler capacitor is electrically connected between the first end of the third winding of the first coupling inductor and the cathode of the second voltage doubler diode.

第一輸出級電連接該箝位二極體的陰極,用以根據來自該第一繞組與該舉升電容的放電,產生一呈直流的第一電壓。第二輸出級電連接該第一倍壓二極體的陰極,用以根據來自該第二繞組與該第一倍壓電容的放電,產生一呈直流的第二電壓。第三輸出級,電連接該第二倍壓二極體的陰極,用以根據來自該第三繞組與該第二倍壓電容的放電,產生一呈直流的第三電壓。The first output stage is electrically connected to the cathode of the clamping diode, and is used for generating a first DC voltage according to the discharge from the first winding and the lifting capacitor. The second output stage is electrically connected to the cathode of the first voltage doubler diode, and is used for generating a second DC voltage according to the discharge from the second winding and the first voltage doubler capacitor. The third output stage is electrically connected to the cathode of the second voltage doubler diode, and is used for generating a third DC voltage according to the discharge from the third winding and the second voltage doubler capacitor.

該第一輸出級還與該第二輸出級與該第三輸出級疊接一起,產生一輸出電壓,該輸出電壓正比於該第一電壓與該第二電壓與該第三電壓的加總。The first output stage is also stacked with the second output stage and the third output stage to generate an output voltage, which is proportional to the sum of the first voltage, the second voltage, and the third voltage.

本發明的功效在於:利用舉升電容及二個耦合電感各自的三個繞組進行電壓倍增,使得電壓增益具有二個設計自由度:耦合電感匝數比和開關導通比,所以高電壓增益的達成,不必操作在極大的導通比。The efficacy of the present invention lies in: using the lifting capacitor and the three windings of the two coupling inductors for voltage multiplication, so that the voltage gain has two design degrees of freedom: the coupling inductor turns ratio and the switch conduction ratio, so the high voltage gain can be achieved , need not operate at extremely large conduction ratios.

在本發明被詳細描述前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same numerals.

參閱圖2為本發明高升壓直流轉換器裝置的一實施例,包含一個第一耦合電感1、一個第二耦合電感2、一第一開關S 1、一第二開關S 2、一箝位二極體D C、一舉升電容C f、第一再生二極體D 11、一第一再生電容C 11、一第一倍壓二極體D 12、一第一倍壓電容C 12、一第二再生二極體D 21、一第二再生電容C 21、一第二倍壓二極體D 22、一第二倍壓電容C 22、一第一輸出級O1、一第二輸出級O2、一第三輸出級O3,與一控制單元4。 Referring to FIG. 2, it is an embodiment of the high boost DC converter device of the present invention, which includes a first coupled inductor 1, a second coupled inductor 2, a first switch S 1 , a second switch S 2 , and a clamp Diode D C , a lifting capacitor C f , a first regenerative diode D 11 , a first regenerative capacitor C 11 , a first voltage doubler diode D 12 , a first voltage doubler capacitor C 12 , A second regenerative diode D 21 , a second regenerative capacitor C 21 , a second voltage doubler diode D 22 , a second voltage doubler capacitor C 22 , a first output stage O1, a second output stage O2, a third output stage O3, and a control unit 4.

每一個耦合電感1、2分別具有一第一繞組N 1、P 1、一第二繞組N 2、P 2及一第三繞組N 3、P 3,每一個繞組N 1~N 3、P 1~P 3具有一第一端及一第二端,其中,該第一耦合電感1的第一繞組N 1的第一端與該第二耦合電感2的第一繞組P 1的第一端電連接一起以接收一呈直流的輸入電壓,該第一耦合電感1的第二繞組N 2的第二端電連接該第二耦合電感2的第二繞組P 2的第二端,該第一耦合電感1的第三繞組N 3的第二端電連接該第二耦合電感2的第三繞組P 3的第二端。每一第一繞組N 1、P 1的第一端是打點端,每一第一繞組N 1、P 1的第二端是非打點端。每一第二繞組N 2、P 2的第一端是打點端,每一第二繞組N 2、P 2的第二端是非打點端。每一第三繞組N 3、P 3的第一端是打點端,每一第三繞組N 3、P 3的第二端是非打點端。 Each coupled inductor 1, 2 respectively has a first winding N 1 , P 1 , a second winding N 2 , P 2 and a third winding N 3 , P 3 , each winding N 1 ~N 3 , P 1 ~ P3 has a first end and a second end, wherein, the first end of the first winding N1 of the first coupled inductor 1 is electrically connected to the first end of the first winding P1 of the second coupled inductor 2 connected together to receive a DC input voltage, the second end of the second winding N2 of the first coupling inductor 1 is electrically connected to the second end of the second winding P2 of the second coupling inductor 2 , the first coupling The second end of the third winding N 3 of the inductor 1 is electrically connected to the second end of the third winding P 3 of the second coupled inductor 2 . The first end of each first winding N 1 , P 1 is a dotted end, and the second end of each first winding N 1 , P 1 is a non-dotted end. The first end of each second winding N 2 , P 2 is a dotted end, and the second end of each second winding N 2 , P 2 is a non-dotted end. The first end of each third winding N 3 , P 3 is a dotted end, and the second end of each third winding N 3 , P 3 is a non-dotted end.

第一開關S 1具有一電連接於該第一耦合電感1的第一繞組N 1的第二端的第一端,及一接地的第二端,且該第一開關S 1受控制以切換於導通狀態和不導通狀態間,當該第一開關S 1導通時,該第一耦合電感1的第一繞組N 1接收一電流進行充電。第一開關S 1是一N型功率半導體電晶體,且該第一開關S 1的第一端是汲極,該第一開關S 1的第二端是源極。 The first switch S1 has a first end electrically connected to the second end of the first winding N1 of the first coupled inductor 1, and a second end that is grounded, and the first switch S1 is controlled to switch between Between the conducting state and the non-conducting state, when the first switch S1 is conducting, the first winding N1 of the first coupled inductor 1 receives a current for charging. The first switch S1 is an N-type power semiconductor transistor, and the first end of the first switch S1 is a drain, and the second end of the first switch S1 is a source.

第二開關S 2具有一電連接於該第二耦合電感2的第一繞組P 1的第二端的第一端,及一接地的第二端,且該第二開關S 2受控制以切換於導通狀態和不導通狀態間;該第二開關S 2是一N型功率半導體電晶體,且該第二開關S 2的第一端是汲極,該第二開關S 2的第二端是源極。 The second switch S2 has a first end electrically connected to the second end of the first winding P1 of the second coupled inductor 2, and a second end that is grounded, and the second switch S2 is controlled to switch between Between the conduction state and the non-conduction state; the second switch S2 is an N-type power semiconductor transistor, and the first end of the second switch S2 is a drain, and the second end of the second switch S2 is a source pole.

箝位二極體D C具有一電連接於該第二耦合電感2的第一繞組P 1的第二端的陽極,與一陰極。舉升電容C f電連接該第一耦合電感1的第一繞組N 1的第二端與該箝位二極體D C的陰極間。 The clamping diode DC has an anode electrically connected to the second terminal of the first winding P 1 of the second coupled inductor 2 , and a cathode. The lifting capacitor C f is electrically connected between the second end of the first winding N 1 of the first coupling inductor 1 and the cathode of the clamping diode DC .

第一再生二極體D 11具有一電連接該第二耦合電感2的第二繞組P 2的第一端的陽極,與一陰極。第一再生電容C 11電連接該該第一耦合電感1的第二繞組N 2的第一端與該第一再生二極體D 11的陰極之間。第一倍壓二極體D 12具有一電連接該第一再生二極體D 11的陰極的陽極,與一陰極。第一倍壓電容C 12電連接該第二耦合電感2的第二繞組P 2的第一端與該第一倍壓二極體D 12的陰極之間。 The first regenerative diode D 11 has an anode electrically connected to the first end of the second winding P 2 of the second coupled inductor 2 , and a cathode. The first regenerative capacitor C 11 is electrically connected between the first end of the second winding N 2 of the first coupling inductor 1 and the cathode of the first regenerative diode D 11 . The first voltage doubling diode D12 has an anode electrically connected to the cathode of the first regenerative diode D11 , and a cathode. The first voltage doubling capacitor C 12 is electrically connected between the first end of the second winding P 2 of the second coupled inductor 2 and the cathode of the first voltage doubling diode D 12 .

第二再生二極體D 21具有一電連接該第一耦合電感1的第三繞組N 3的第一端的陽極,與一陰極。第二再生電容C 21電連接該第二耦合電感2的第三繞組P 3的第一端與該第二再生二極體D 21的陰極之間。第二倍壓二極體D 22具有一電連接該第二再生二極體D 21的陰極的陽極,與一陰極。第二倍壓電容C 22電連接該第一耦合電感1的第三繞組N 3的第一端與該第二倍壓二極體D 22的陰極之間。 The second regenerative diode D 21 has an anode electrically connected to the first end of the third winding N 3 of the first coupled inductor 1 , and a cathode. The second regenerative capacitor C 21 is electrically connected between the first end of the third winding P 3 of the second coupling inductor 2 and the cathode of the second regenerative diode D 21 . The second voltage doubler diode D22 has an anode electrically connected to the cathode of the second regenerative diode D21 , and a cathode. The second voltage doubling capacitor C 22 is electrically connected between the first end of the third winding N 3 of the first coupling inductor 1 and the cathode of the second voltage doubling diode D 22 .

第一輸出級O1電連接該箝位二極體D C的陰極,用以根據來自該第一耦合電感1與該舉升電容C f的放電,產生一呈直流的第一電壓。該第一輸出級O1包括一第一輸出二極體D o1與一第一輸出電容C 1The first output stage O1 is electrically connected to the cathode of the clamping diode DC for generating a first DC voltage according to the discharge from the first coupling inductor 1 and the lifting capacitor C f . The first output stage O1 includes a first output diode D o1 and a first output capacitor C 1 .

第一輸出二極體D o1具有一電連接該舉升電容C f的一端的陽極,及一陰極。第一輸出電容C 1電連接於該第一輸出二極體D o1的陰極與接地之間,用以提供該第一電壓。 The first output diode D o1 has an anode electrically connected to one end of the boost capacitor C f and a cathode. The first output capacitor C1 is electrically connected between the cathode of the first output diode D o1 and ground for providing the first voltage.

第二輸出級O2電連接該第一倍壓二極體D 12的陰極,用以根據來自該第二耦合電感2與該第一倍壓電容C 12的放電,產生一呈直流的第二電壓。該第二輸出級O2包括一第二輸出二極體D o2與一第二輸出電容C 2The second output stage O2 is electrically connected to the cathode of the first voltage doubler diode D 12 , and is used to generate a second DC voltage according to the discharge from the second coupling inductor 2 and the first voltage doubler capacitor C12 . Voltage. The second output stage O2 includes a second output diode D o2 and a second output capacitor C 2 .

第二輸出二極體D o2具有一電連接該第一倍壓電容C 12的一端的陽極,及一陰極。第二輸出電容C 2電連接於該第二輸出二極體D o2的陰極與該第一輸出電容C 1之間,用以提供該第二電壓。 The second output diode D o2 has an anode electrically connected to one end of the first voltage doubling capacitor C 12 , and a cathode. The second output capacitor C2 is electrically connected between the cathode of the second output diode D o2 and the first output capacitor C1 for providing the second voltage.

第三輸出級O3電連接該第二倍壓二極體D 22的陰極,用以根據來自該第三繞組N 3、P 3與該第二倍壓電容C 22的放電,產生一呈直流的第三電壓。該第三輸出級O3包括一第三輸出二極體D o3與一第三輸出電容C 3The third output stage O3 is electrically connected to the cathode of the second voltage doubling diode D22 , and is used to generate a DC current according to the discharge from the third winding N3 , P3 and the second voltage doubling capacitor C22 . the third voltage. The third output stage O3 includes a third output diode D o3 and a third output capacitor C 3 .

第三輸出二極體D o3具有一電連接該第二倍壓電容C 22的一端的陽極,及一陰極。第三輸出電容C 3電連接於該第三輸出二極體D o3的陰極與該第二輸出電容C 2之間,用以提供該第三電壓,其中,該第一輸出電容C 1與該第二輸出電容C 2與該第三輸出電容C 3疊接一起。 The third output diode D o3 has an anode electrically connected to one end of the second voltage doubling capacitor C 22 , and a cathode. The third output capacitor C3 is electrically connected between the cathode of the third output diode D o3 and the second output capacitor C2 to provide the third voltage, wherein the first output capacitor C1 and the The second output capacitor C2 is stacked with the third output capacitor C3 .

該第一輸出級O1還與該第二輸出級O2與該第三輸出級O3疊接一起,產生一輸出電壓V o,該輸出電壓V o正比於該第一電壓與該第二電壓與該第三電壓的加總。 The first output stage O1 is also stacked with the second output stage O2 and the third output stage O3 to generate an output voltage V o , the output voltage V o is proportional to the first voltage and the second voltage and the summation of the third voltage.

該控制單元4產生一切換該第一開關S 1的第一脈波調變信號及一切換該第二開關S 2的第二脈波調變信號,該第一脈波調變信號與該第二脈波調變信號具有相同的周期時間。該第一及第二脈波調變信號的周期時間的一部份重疊。以下將以八階段進一步說明第一開關S 1、第二開關S 2的切換時序圖。 The control unit 4 generates a first pulse modulation signal for switching the first switch S1 and a second pulse modulation signal for switching the second switch S2 , the first pulse modulation signal and the second pulse modulation signal The two pulse modulation signals have the same cycle time. A portion of the period time of the first and second pulse modulation signals overlaps. The switching timing diagram of the first switch S 1 and the second switch S 2 will be further described below in eight stages.

參閱圖3,為本實施例的一等效電路圖,用以說明二個耦合電感的非理想等效電路中各自的磁化電感L m1、L m2及其漏電感L k1、L k2。其中,參數V in代表輸入電壓,參數V o代表輸出電壓。 Referring to FIG. 3 , it is an equivalent circuit diagram of this embodiment, which is used to illustrate the respective magnetizing inductances L m1 , L m2 and their leakage inductances L k1 , L k2 in the non-ideal equivalent circuit of the two coupled inductors. Among them, the parameter V in represents the input voltage, and the parameter V o represents the output voltage.

參閱圖4,為本實施例的操作時序圖,其中,參數 v gs1、v gs2分別代表控制該第一及第二開關S 1、 S 2是否導通的第一及第二脈波信號的電壓,參數v ds1、v ds2分別代表該第一及第二開關S 1、 S 2的二端跨壓,參數T S為第一脈波信號的週期時間。參數 i in代表輸入電流。參數i Lk1、i Lk2分別代表流經第一耦合電感1的第一繞組N 1、第二耦合電感2的第一繞組P 1的漏電感電流。參數i Dc代表流過箝位二極體D C的電流,參數i Do1代表流過第一輸出二極體D o1的電流,參數i D11代表流過第一再生二極體D 11的電流,參數i D21代表流過第二再生二極體D 21的電流,參數i D12代表流過第一倍壓二極體D 12的電流,參數i D22代表流過第二倍壓二極體D 22的電流,參數i Do2代表流過第二輸出二極體D o2的電流,參數i Do3代表流過第三輸出二極體D o3的電流。 Referring to FIG. 4 , it is an operation timing diagram of this embodiment, wherein the parameters v gs1 and v gs2 respectively represent the voltages of the first and second pulse signals controlling whether the first and second switches S 1 and S 2 are turned on, The parameters v ds1 and v ds2 respectively represent the voltage across the first and second switches S 1 and S 2 , and the parameter T S is the cycle time of the first pulse signal. The parameter i in represents the input current. The parameters i Lk1 and i Lk2 respectively represent the leakage inductance current flowing through the first winding N 1 of the first coupled inductor 1 and the first winding P 1 of the second coupled inductor 2 . The parameter i Dc represents the current flowing through the clamping diode D C , the parameter i Do1 represents the current flowing through the first output diode D o1 , the parameter i D11 represents the current flowing through the first regenerative diode D 11 , The parameter i D21 represents the current flowing through the second regenerative diode D 21 , the parameter i D12 represents the current flowing through the first voltage doubler diode D 12 , and the parameter i D22 represents the current flowing through the second voltage doubler diode D 22 The current, the parameter i Do2 represents the current flowing through the second output diode D o2 , and the parameter i Do3 represents the current flowing through the third output diode D o3 .

以下為本實施例操作於八階段的各電路圖,分別針對每一階段進行說明。The following are the circuit diagrams of this embodiment operating in eight stages, each stage is described separately.

第一階段(時間:t 0~t 1): The first stage (time: t 0 ~t 1 ):

參閱圖4及圖5,第一開關S 1由不導通轉成導通,而第二開關S 2導通,第一輸出二極體D o1、箝制二極體D C、第一倍壓二極體D 12、第二再生二極體D 21和第三輸出二極體D o3均為逆向偏壓而不導通。 Referring to Fig. 4 and Fig. 5, the first switch S 1 turns from non-conduction to conduction, and the second switch S 2 conducts, the first output diode D o1 , the clamping diode D C , and the first voltage doubler diode D 12 , the second regenerative diode D 21 and the third output diode D o3 are all reverse biased and non-conductive.

由於漏電感L k1的存在,且在時間to時的漏電感電流i Lk1是0,因此第一開關S 1以零電流切換(ZCS)切換為導通。第一階段時漏電感電流i Lk1從0快速上升。當i Lk1<i Lm1時,磁化電感L m1所儲存的能量耦合傳送至第二繞組N 2及第三繞組N 3,使得第一再生二極體D 11、第二輸出二極體D o2和第二倍壓二極體D 22導通,導致電流i D11、i Do2和i D22下降,而下降的速率受到漏電感L k1和L k2控制,因此緩和這些二極體的反向恢復問題。當t=t 1,電流i Lk1上升至滿足i Lk1= i Lm1,第一繞組N 1之理想變壓器電流等於0,因此流經第二繞組N 2及第三繞組N 3的電流下降至0,使得電流i D11、i Do2和i D22下降至0,第一再生二極體D 11、第二輸出二極體D o2和第二倍壓二極體D 22以零電流切換(ZCS)自然轉態成不導通時,本階段結束。其中第一階段的電流公式如下: Due to the existence of the leakage inductance L k1 , and the leakage inductance current i Lk1 is 0 at time to, the first switch S 1 is switched on with zero current switching (ZCS). In the first stage, the leakage inductance current i Lk1 rises rapidly from 0. When i Lk1 <i Lm1 , the energy stored in the magnetizing inductance L m1 is coupled and transmitted to the second winding N 2 and the third winding N 3 , so that the first regenerative diode D 11 , the second output diode D o2 and The second voltage doubler diode D 22 is turned on, causing the currents i D11 , i Do2 and i D22 to drop, and the rate of drop is controlled by the leakage inductance L k1 and L k2 , thus alleviating the reverse recovery problem of these diodes. When t=t 1 , the current i Lk1 rises to satisfy i Lk1 = i Lm1 , the ideal transformer current of the first winding N 1 is equal to 0, so the current flowing through the second winding N 2 and the third winding N 3 drops to 0, Make the current i D11 , i Do2 and i D22 drop to 0, and the first regenerative diode D 11 , the second output diode D o2 and the second voltage doubler diode D 22 switch naturally with zero current switching (ZCS) This phase ends when the state becomes non-conductive. The current formula of the first stage is as follows:

Figure 02_image003
Figure 02_image003
.

第二階段(

Figure 02_image005
): second stage(
Figure 02_image005
):

參閱圖4及圖6,第二階段開始於t=t 1,第一開關S 1和第二開關S 2皆為導通狀態,所有二極體均為不導通狀態。輸入電壓V in跨於磁化電感L m1、L m2與漏電感L k1、L k2,漏電感電流i Lk1和i Lk2呈線性上升,從能量觀點而言,輸入電壓源對二個耦合電感1、2的二個磁化電感L m1、L m2儲存能量。第一輸出電容C 1、第二輸出電容C 2、第三輸出電容C 3提供能量至負載。其中第二階段的電流公式如下: Referring to FIG. 4 and FIG. 6 , the second stage starts at t=t 1 , the first switch S 1 and the second switch S 2 are both in the conduction state, and all the diodes are in the non-conduction state. The input voltage V in straddles the magnetizing inductance L m1 , L m2 and the leakage inductance L k1 , L k2 , the leakage inductance current i Lk1 and i Lk2 rise linearly. The two magnetizing inductances L m1 and L m2 of 2 store energy. The first output capacitor C 1 , the second output capacitor C 2 and the third output capacitor C 3 provide energy to the load. The current formula of the second stage is as follows:

Figure 02_image007
,
Figure 02_image009
Figure 02_image007
,
Figure 02_image009

第三階段(

Figure 02_image011
): The third phase(
Figure 02_image011
):

參閱圖4及圖7,第一開關S 1導通,而第二開關S 2切換為不導通,因為漏電感電流i Lk2具有連續性,使得箝位二極體D C轉態為導通,漏電感電流i Lk2流經箝位二極體D C、舉升電容C f和第一開關S 1對舉升電容C f充電。第二開關S 2的跨壓箝位在舉升電容C f的電壓。第三階段的漏電感電流i Lk2下降,磁化電感L m2的儲能傳送至第二繞組P 2及第三繞組P 3。第二繞組P 2的電流使得第一倍壓二極體D 12轉態為導通,電流i D12對第一倍壓電容C 12充電,同時對第一再生電容C 11放電;第三繞組P 3電流使得第二再生二極體D 21和第三輸出二極體D o3轉態為導通,電流i D21對第二再生電容C 21充電,電流i Do3對第二倍壓電容C 22放電及對第三輸出電容C 3充電。當t=t3,漏電感電流i Lk2下降至0,箝位二極體D C以零電流切換(ZCS)自然轉態為不導通時,本階段結束。 Referring to Fig. 4 and Fig. 7, the first switch S 1 is turned on, while the second switch S 2 is switched to be non-conductive, because the leakage inductance current i Lk2 has continuity, which makes the clamping diode DC turn on, and the leakage inductance The current i Lk2 flows through the clamping diode D C , the lifting capacitor C f and the first switch S 1 to charge the lifting capacitor C f . The voltage across the second switch S2 clamps the voltage of the boost capacitor Cf. The leakage inductance current i Lk2 in the third stage decreases, and the energy stored in the magnetizing inductance L m2 is transmitted to the second winding P 2 and the third winding P 3 . The current of the second winding P 2 makes the first voltage doubler diode D 12 turn on, and the current i D12 charges the first voltage doubler capacitor C 12 and discharges the first regenerative capacitor C 11 at the same time; the third winding P 3 The current makes the second regenerative diode D 21 and the third output diode D o3 turn on, the current i D21 charges the second regenerative capacitor C 21 , and the current i Do3 discharges the second voltage doubler capacitor C 22 And charge the third output capacitor C3 . When t=t3, the leakage inductance current i Lk2 drops to 0, and the clamping diode D C turns to non-conduction naturally through zero-current switching (ZCS), and this stage ends.

第四階段(

Figure 02_image013
): Phase IV (
Figure 02_image013
):

參閱圖4及圖8,第四階段開始於t=t 3,此時漏電感i Lk2的能量釋放完畢,箝位二極體D C轉態成不導通。磁化電感電流L m2完全由第一繞組P 1反射到第二繞組P 2及第三繞組P 3。第四階段第二繞組P 2及第三繞組P 3所組成的電壓倍增模組電路操作與第三階段相同。第四階段流經第一開關S1的電流如下: Referring to Fig. 4 and Fig. 8, the fourth stage starts at t=t 3 , at this time, the energy of the leakage inductance i Lk2 is released, and the clamping diode D C turns non-conductive. The magnetizing inductor current L m2 is completely reflected by the first winding P 1 to the second winding P 2 and the third winding P 3 . In the fourth stage, the operation of the voltage multiplication module circuit composed of the second winding P2 and the third winding P3 is the same as that of the third stage. The current flowing through the first switch S1 in the fourth stage is as follows:

Figure 02_image015
Figure 02_image015

第五階段(

Figure 02_image017
): Fifth stage (
Figure 02_image017
):

參閱圖4及圖9,第五階段開始於t=tk,第二開關S 2切換成導通,而且第一開關S 1仍保持導通,第一輸出二極體D o1、箝制二極體D C、第一再生二極體D 11、第二輸出二極體D o2和第二倍壓二極體D 22均為逆向偏壓而不導通。由於漏電感L k2的存在,且在時間t 4時的漏電感電流i Lk2是0,因此第二開關S 2以零電流切換(ZCS)切換為導通。第五階段漏電感電流i Lk2從0快速上升。當i Lk2<i Lm2時,磁化電感L m2所儲存的能量仍藉由第一繞組P 1傳送到第二繞組P 2及第三繞組P 3,使得第一倍壓二極體D 12、第二再生二極體D 21和第三輸出二極體D o3導通,電流 i D12、i D21和i Do3下降,而下降的速率受到漏電感L k1、L k2控制,因此緩和二極體的反向恢復問題。當電流i D12、i D21和i Do3下降至0,第一倍壓二極體D 12、第二再生二極體D 21和第三輸出二極體D o3以零電流切換(ZCS)自然轉態成不導通時,第五階段結束。其中第五階段的電流公式如下: Referring to Fig. 4 and Fig. 9, the fifth phase begins at t=tk, the second switch S 2 is switched on, and the first switch S 1 remains on, the first output diode D o1 , the clamping diode D C , the first regenerative diode D 11 , the second output diode D o2 and the second voltage doubler diode D 22 are all reverse biased and non-conductive. Due to the existence of the leakage inductance Lk2 , and the leakage inductance current i Lk2 at time t4 is 0, the second switch S2 is switched on with zero current switching (ZCS). In the fifth stage, the leakage inductance current i Lk2 rises rapidly from 0. When i Lk2 <i Lm2 , the energy stored in the magnetizing inductance L m2 is still transferred to the second winding P 2 and the third winding P 3 through the first winding P 1 , so that the first voltage doubler diode D 12 , the second winding The second regenerative diode D 21 and the third output diode D o3 are turned on, and the current i D12 , i D21 and i Do3 decrease, and the rate of decrease is controlled by the leakage inductance L k1 and L k2 , thus easing the reaction of the diodes to restore the problem. When the current i D12 , i D21 and i Do3 drop to 0, the first voltage doubler diode D 12 , the second regenerative diode D 21 and the third output diode D o3 switch naturally in zero current switching (ZCS) When the state becomes non-conductive, the fifth stage ends. The current formula of the fifth stage is as follows:

Figure 02_image019
Figure 02_image019

第六階段(

Figure 02_image021
): Stage VI (
Figure 02_image021
):

參閱圖4及圖10,第六階段開始於t=t 5,第一開關S 1和第二開關S 2皆為導通狀態,所有二極體均為不導通狀態。輸入電壓V in跨於磁化電感L m1、L m2與漏電感L k1、L k2,漏電感電流i Lk1和i Lk2呈線性上升,從能量觀點而言,輸入電壓源對二個耦合電感1、2的磁化電感L m1、L m2儲存能量。第一輸出電容C 1、第二輸出電容C 2、第三輸出電容C 3提供能量至負載。當t=t 5,第一開關S1切換為不導通時,第六階段結束。其中第六階段的電流公式如下: Referring to FIG. 4 and FIG. 10 , the sixth stage begins at t=t 5 , the first switch S 1 and the second switch S 2 are both in the conduction state, and all the diodes are in the non-conduction state. The input voltage V in straddles the magnetizing inductance L m1 , L m2 and the leakage inductance L k1 , L k2 , the leakage inductance current i Lk1 and i Lk2 rise linearly. The magnetizing inductance L m1 and L m2 of 2 store energy. The first output capacitor C 1 , the second output capacitor C 2 and the third output capacitor C 3 provide energy to the load. When t=t 5 , when the first switch S1 is switched off, the sixth stage ends. The current formula of the sixth stage is as follows:

Figure 02_image023
,
Figure 02_image025
Figure 02_image023
,
Figure 02_image025

第七階段(

Figure 02_image027
): Seventh stage (
Figure 02_image027
):

參閱圖4及圖11,第七階段開始於t=t 6,第一開關S1切換為不導通,因為漏電感電流i Lk1具有連續性,使得第一輸出二極體D O1轉態成導通,第一開關S 1的跨壓箝位在-V Cf+V C1。第七階段的輸入電壓V in,磁化電感L m1,漏電感L k1和舉升電容C f,經由第一輸出二極體D o1釋放能量至輸出電容C 1,因此提升了輸出電容C 1的第一電壓。隨著漏電感電流i Lk1下降,磁化電感L m1的儲能藉由第一繞組N 1傳送到第二繞組N 2及第三繞組N 3,第二繞組N 2電流使得第一再生二極體D 11、第二輸出二極體D o2轉態為導通,電流i D11對第一再生電容C 11充電,電流i D12對電容第一倍壓電容C 12放電及對第二輸出電容C 2充電;第三繞組N 3電流使得二極體D 22轉態為導通,電流i D22對第二倍壓電容C 22充電,同時對第二再生電容C 21放電。當漏電感電流i Lk1下降至0,第一輸出二極體D o1以零電流切換(ZCS)自然轉態為不導通時,本階段結束。 Referring to Fig. 4 and Fig. 11, the seventh stage starts at t=t 6 , and the first switch S1 is switched to non-conduction, because the leakage inductance current i Lk1 has continuity, so that the first output diode D O1 turns into conduction, The voltage across the first switch S 1 is clamped at -V Cf +V C1 . In the seventh stage, the input voltage V in , the magnetizing inductance L m1 , the leakage inductance L k1 and the lifting capacitor C f release energy to the output capacitor C 1 through the first output diode D o1 , thus increasing the output capacitor C 1 first voltage. As the leakage inductance current i Lk1 decreases, the energy stored in the magnetizing inductance L m1 is transmitted to the second winding N 2 and the third winding N 3 through the first winding N 1 , and the current in the second winding N 2 makes the first regenerative diode D 11 , the second output diode D o2 turns on, the current i D11 charges the first regenerative capacitor C 11 , the current i D12 discharges the first capacitor C 12 and the second output capacitor C 2 Charging: the current of the third winding N3 makes the diode D22 turn on, and the current i D22 charges the second voltage doubling capacitor C22 and discharges the second regenerative capacitor C21 at the same time. When the leakage inductance current i Lk1 drops to 0, and the first output diode D o1 naturally transitions to non-conduction through zero-current switching (ZCS), this stage ends.

第八階段(

Figure 02_image029
): Eighth stage (
Figure 02_image029
):

參閱圖4及圖12,第八階段開始於t=t 7,此時漏電感L k1的能量釋放完畢,第一輸出二極體D o1轉態成不導通。磁化電感電流i Lm1完全由第一繞組N 1反射到第二繞組N 2及第三繞組N 3。第八階段中由第二繞組N 2及第三繞組N 3分別組成的電壓倍增模組(VMM)之電路操作與第七階段相同。當t=t 8,第一開關S 1切換為導通時,本階段結束,進入下一個切換週期。其中第八階段經過第二開關的電流公式如下: Referring to FIG. 4 and FIG. 12 , the eighth stage starts at t=t 7 , when the energy of the leakage inductance L k1 is released, and the first output diode D o1 turns non-conductive. The magnetizing inductor current i Lm1 is completely reflected by the first winding N 1 to the second winding N 2 and the third winding N 3 . The circuit operation of the voltage multiplier module (VMM) composed of the second winding N2 and the third winding N3 in the eighth stage is the same as that in the seventh stage. When t=t 8 , when the first switch S 1 is switched on, this phase ends and the next switching period enters. The formula for the current passing through the second switch in the eighth stage is as follows:

Figure 02_image031
Figure 02_image031

<電壓增益分析><Voltage gain analysis>

由轉換器操作原理可知:舉升電容C f如同傳統升壓型轉換器的輸出電容,根據磁化電感L m2滿足伏秒平衡定理(principle of volt-second balance),因此可推導得到電壓V CfIt can be seen from the operating principle of the converter that the lifting capacitor C f is like the output capacitor of a traditional boost converter, and the magnetizing inductance L m2 satisfies the principle of volt-second balance, so the voltage V Cf can be derived as

Figure 02_image033
Figure 02_image033

另外,由磁化電感L m1滿足伏秒平衡定理,可得 In addition, since the magnetizing inductance L m1 satisfies the volt-second balance theorem, it can be obtained

Figure 02_image035
Figure 02_image035

舉升電容C f提升了第一輸出電容C 1的電壓值,因此可求得第一輸出電容C 1的電壓值 The lifting capacitor C f boosts the voltage value of the first output capacitor C 1 , so the voltage value of the first output capacitor C 1 can be obtained

Figure 02_image037
Figure 02_image037

在第三階段時,耦合電感的磁化電感電壓分別為

Figure 02_image039
Figure 02_image041
Figure 02_image043
In the third stage, the magnetizing inductance voltage of the coupled inductor is
Figure 02_image039
;
Figure 02_image041
,
Figure 02_image043

因此,可求得第二再生電容C 21的電壓

Figure 02_image045
。 Therefore, the voltage of the second regenerative capacitor C21 can be obtained
Figure 02_image045
.

另外,在第三階段時,利用克希荷夫電壓定律(KVL)可求得

Figure 02_image047
Figure 02_image049
。 In addition, in the third stage, Kirchhoff's voltage law (KVL) can be used to obtain
Figure 02_image047
;
Figure 02_image049
.

在第七階段時,耦合電感的磁化電感電壓分別為In the seventh stage, the magnetizing inductance voltage of the coupled inductor is

Figure 02_image051
Figure 02_image053
Figure 02_image051
;
Figure 02_image053

因此,可求得電容C 11電壓 Therefore, the capacitor C 11 voltage can be obtained

Figure 02_image055
Figure 02_image055

另外,在第七階段時,利用KVL可求得In addition, in the seventh stage, KVL can be used to obtain

Figure 02_image057
Figure 02_image057

Figure 02_image059
Figure 02_image059

Figure 02_image061
Figure 02_image063
Figure 02_image061
;
Figure 02_image063

Figure 02_image065
Figure 02_image065

可推得電壓增益為The voltage gain can be deduced as

Figure 02_image067
Figure 02_image067

如圖13所示,不同耦合係數下、電壓增益與導通比之關係曲線,當耦合電感匝數比

Figure 02_image069
,本轉換器在三種不同之耦合係數
Figure 02_image071
Figure 02_image073
Figure 02_image075
Figure 02_image077
情況下,電壓增益及導通比之關係曲線,由圖可知耦合係數對電壓增益影響很小。若忽略耦合電感之漏電感,即
Figure 02_image079
,轉換器之理想電壓增益M如下: As shown in Figure 13, the relationship between voltage gain and conduction ratio under different coupling coefficients, when the coupling inductor turns ratio
Figure 02_image069
, the converter has three different coupling coefficients
Figure 02_image071
,
Figure 02_image073
,
Figure 02_image075
and
Figure 02_image077
In this case, the relationship curve between voltage gain and conduction ratio can be seen from the figure that the coupling coefficient has little influence on the voltage gain. If the leakage inductance of the coupled inductor is neglected, that is
Figure 02_image079
, the ideal voltage gain M of the converter is as follows:

Figure 02_image081
(當耦合係數
Figure 02_image083
)
Figure 02_image081
(when the coupling coefficient
Figure 02_image083
)

由理想電壓增益M的公式可知本轉換器之電壓增益有兩個設計自由度:耦合電感匝數比

Figure 02_image084
和導通比
Figure 02_image086
。透過調整轉換器之耦合電感匝數比
Figure 02_image088
,可使得高升壓之達成,轉換器不需操作在極大導通比。 From the formula of the ideal voltage gain M, it can be seen that the voltage gain of the converter has two design degrees of freedom: the coupling inductor turns ratio
Figure 02_image084
and conduction ratio
Figure 02_image086
. By adjusting the coupling inductor turns ratio of the converter
Figure 02_image088
, can achieve a high boost, the converter does not need to operate at a very large conduction ratio.

如圖14所示,為當耦合係數k=1時,電壓增益與導通比

Figure 02_image089
及耦合電感匝數比
Figure 02_image090
之曲線圖,由圖可知:當
Figure 02_image091
Figure 02_image093
時,電壓增益為20倍,當
Figure 02_image094
Figure 02_image095
時,電壓增益為35倍。 As shown in Figure 14, when the coupling coefficient k=1, the voltage gain and conduction ratio
Figure 02_image089
and coupled inductor turns ratio
Figure 02_image090
It can be seen from the graph that: when
Figure 02_image091
and
Figure 02_image093
, the voltage gain is 20 times, when
Figure 02_image094
and
Figure 02_image095
, the voltage gain is 35 times.

<開關電壓應力分析><Switch voltage stress analysis>

若忽略電容漣波電壓及耦合電感之漏電感(耦合係數

Figure 02_image097
),開關元件視為理想,即壓降為零。由第三階段及第七階段可知,第一開關
Figure 02_image098
和第二開關
Figure 02_image100
之電壓應力分別如下式: If the capacitor ripple voltage and the leakage inductance of the coupled inductor (coupling coefficient
Figure 02_image097
), the switching element is considered ideal, that is, the voltage drop is zero. It can be seen from the third stage and the seventh stage that the first switch
Figure 02_image098
and the second switch
Figure 02_image100
The voltage stresses are as follows:

Figure 02_image102
Figure 02_image102

Figure 02_image104
Figure 02_image104

從第三階段可發現:第一輸出二極體D o1、第二輸出二極體D o2、第一再生二極體D 11、第二再生二極體D 22的電壓應力可分別表示如下:

Figure 02_image106
Figure 02_image108
Figure 02_image110
Figure 02_image112
。 From the third stage, it can be found that the voltage stress of the first output diode D o1 , the second output diode D o2 , the first regenerative diode D 11 , and the second regenerative diode D 22 can be expressed as follows:
Figure 02_image106
,
Figure 02_image108
;
Figure 02_image110
;
Figure 02_image112
.

從第七階段可發現:箝位二極體D c、第一倍壓二極體D 12、第二再生二極體D 21、第三輸出二極體D o3的電壓應力可分別表示如下:

Figure 02_image114
Figure 02_image116
Figure 02_image118
Figure 02_image120
。 From the seventh stage, it can be found that the voltage stress of the clamping diode D c , the first voltage doubler diode D 12 , the second regenerative diode D 21 , and the third output diode D o3 can be expressed as follows:
Figure 02_image114
;
Figure 02_image116
;
Figure 02_image118
;
Figure 02_image120
.

由於傳統交錯式升壓型轉換器之功率開關與二極體的電壓應力均為輸出電壓V o,而由上述公式可知:本實施例的第一開關S 1與第二開關S 2的電壓應力僅為輸出電壓V o的1/(6n+2)倍,因此可使用低額定電壓、具有較低導通電阻的MOSFETs,降低開關導通損失。且本實施例的二極體的電壓應力都遠低於輸出電壓V o,屬於低電壓應力的二極體,可採用順向導通壓降較低的功率二極體,降低導通損失。 Since the voltage stress of the power switch and diode of the traditional interleaved boost converter is the output voltage V o , it can be known from the above formula that the voltage stress of the first switch S 1 and the second switch S 2 in this embodiment It is only 1/(6n+2) times of the output voltage V o , so MOSFETs with low rated voltage and low on-resistance can be used to reduce the switch conduction loss. Moreover, the voltage stress of the diodes in this embodiment is far lower than the output voltage V o , which belongs to low voltage stress diodes, and power diodes with lower forward conduction voltage drop can be used to reduce conduction loss.

綜上所述,上述實施例,具有以下優點:In summary, the above embodiment has the following advantages:

一、利用舉升電容C f及耦合電感1、2進行電壓倍增(其中,第二繞組N 2、P 2與第一倍壓二極體D 12、第一倍壓電容C 12、第一再生二極體D 11組成一個電壓倍增模組。第二繞組N 3、P 3與第二倍壓二極體D 22、第二倍壓電容C 22、第二再生二極體D 21組成另一個電壓倍增模組),使得電壓增益具有二個設計自由度:耦合電感匝數比和開關導通比,所以高電壓增益的達成,不必操作在極大的導通比。二、第一開關S 1與第二開關S 2的低電壓應力(遠低於輸出電壓),可使用導通電阻較小的低額定電壓MOSFETs,降低導通損失。第一開關S 1與第二開關S 2能零電流切換(ZCS)導通,降低切換損失。三、二極體的低電壓應力(遠低於輸出電壓),可使用順向導通壓降較小的二極體,降低導通損失。漏電感緩和二極體的反向恢復問題,改善二極體反向恢復損失。四、耦合電感的漏感能量能夠回收,並傳送至輸出側,不但避免產生第一開關S 1與第二開關S 2上的電壓突波,也提升效率。五、轉換器的並聯輸入結構,降低元件電流應力,且兩個功率開關(第一開關S 1與第二開關S 2)採用交錯式操作,降低輸入電流漣波。 1. Use the lifting capacitor C f and coupling inductors 1 and 2 to perform voltage multiplication (wherein, the second winding N 2 , P 2 and the first voltage doubler diode D 12 , the first voltage doubler capacitor C 12 , the first The regenerative diode D 11 forms a voltage multiplication module. The second winding N 3 , P 3 is composed of the second voltage doubling diode D 22 , the second voltage doubling capacitor C 22 , and the second regenerative diode D 21 Another voltage multiplier module), so that the voltage gain has two design degrees of freedom: the coupling inductor turns ratio and the switch conduction ratio, so the achievement of high voltage gain does not need to operate at a very large conduction ratio. 2. The low voltage stress of the first switch S1 and the second switch S2 (far lower than the output voltage), can use low rated voltage MOSFETs with small on-resistance to reduce the conduction loss. The first switch S1 and the second switch S2 can be turned on by zero current switching (ZCS) to reduce switching loss. 3. For the low voltage stress of the diode (far lower than the output voltage), you can use a diode with a small forward conduction voltage drop to reduce the conduction loss. The leakage inductance alleviates the reverse recovery problem of the diode and improves the reverse recovery loss of the diode. 4. The leakage inductance energy of the coupled inductor can be recovered and transmitted to the output side, which not only avoids voltage surges on the first switch S 1 and the second switch S 2 , but also improves efficiency. 5. The parallel input structure of the converter reduces the component current stress, and the two power switches (the first switch S 1 and the second switch S 2 ) adopt interleaved operation to reduce the input current ripple.

惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。But the above-mentioned ones are only embodiments of the present invention, and should not limit the scope of the present invention. All simple equivalent changes and modifications made according to the patent scope of the present invention and the content of the patent specification are still within the scope of the present invention. Within the scope covered by the patent of the present invention.

1:第一耦合電感 2:第二耦合電感 N 1、P 1:第一繞組 N 2、P 2:第二繞組 N 3、P 3:第三繞組 S 1:第一開關 S 2:第二開關 D C:箝位二極體 C f:舉升電容 D 11:第一再生二極體 C 11:第一再生電容 D 12:第一倍壓二極體 C 12:第一倍壓電容 D 21:第二再生二極體 C 21:第二再生電容 D 22:第二倍壓二極體 C 22:第二倍壓電容 O1:第一輸出級 C 1:第一輸出電容 D o1:第一輸出二極體 O2:第二輸出級 C 2:第二輸出電容 D o2:第二輸出二極體 O3:第三輸出級 C 3:第三輸出電容 D o3:第三輸出二極體 4:控制單元 Vin:輸入電壓 V o:輸出電壓 L m1:磁化電感 L m2:磁化電感 v gs1:第一脈波信號的電壓 v gs2:第二脈波信號的電壓 v ds1:第一開關的二端跨壓 v ds2:第二開關的二端跨壓 i LK1:漏電感電流 i LK2:漏電感電流 i Dc:流過箝位二極體的電流 i Do1:流過第一輸出二極體的電流 i D11:流過第一再生二極體的電流 i D21:流過第二再生二極體的電流 i D12:流過第一倍壓二極體的電流 i D22:流過第二倍壓二極體的電流 i Do2:流過第二輸出二極體的電流 i Do3:流過第三輸出二極體的電流1: first coupled inductor 2: second coupled inductor N 1 , P 1 : first winding N 2 , P 2 : second winding N 3 , P 3 : third winding S 1 : first switch S 2 : second Switch D C : clamping diode C f : lifting capacitor D 11 : first regeneration diode C 11 : first regeneration capacitor D 12 : first voltage doubler diode C 12 : first voltage doubler capacitor D 21 : second regenerative diode C 21 : second regenerative capacitor D 22 : second voltage doubler diode C 22 : second voltage doubler capacitor O1: first output stage C 1 : first output capacitor D o1 : the first output diode O2: the second output stage C 2 : the second output capacitor D o2 : the second output diode O3: the third output stage C 3 : the third output capacitor D o3 : the third output diode Body 4: control unit Vin: input voltage V o : output voltage L m1 : magnetizing inductance L m2 : magnetizing inductance v gs1 : voltage of the first pulse wave signal v gs2 : voltage of the second pulse wave signal v ds1 : first switch The two-terminal voltage v ds2 : the two-terminal voltage of the second switch i LK1 : the leakage inductance current i LK2 : the leakage inductance current i Dc : the current i flowing through the clamping diode Do1 : flowing through the first output diode Body current i D11 : current i D21 flowing through the first regenerative diode: current i D12 flowing through the second regenerative diode: current i D22 flowing through the first voltage doubler diode: flowing through the second Current i Do2 of the voltage doubler diode: current flowing through the second output diode i Do3 : current flowing through the third output diode

本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一種習知的升壓轉換器的一電路圖; 圖2是本發明高升壓直流轉換器裝置的一實施例的一電路圖; 圖3是該實施例的一等效電路圖; 圖4是該實施例的一操作時序圖; 圖5是該實施例操作於第一階段的一電路圖; 圖6是該實施例操作於第二階段的一電路圖; 圖7是該實施例操作於第三階段的一電路圖; 圖8是該實施例操作於第四階段的一電路圖; 圖9是該實施例操作於第五階段的一電路圖; 圖10是該實施例操作於第六階段的一電路圖; 圖11是該實施例操作於第七階段的一電路圖; 圖12是該實施例操作於第八階段的一電路圖; 圖13是該實施例的不同耦合係數和電壓增益的一關係曲線圖;及 圖14是該實施例的耦合電感匝數比及導通比的一電壓增益曲線圖。 Other features and effects of the present invention will be clearly presented in the implementation manner with reference to the drawings, wherein: FIG. 1 is a circuit diagram of a conventional boost converter; Fig. 2 is a circuit diagram of an embodiment of the high boost DC converter device of the present invention; Fig. 3 is an equivalent circuit diagram of this embodiment; Fig. 4 is an operation sequence diagram of this embodiment; Fig. 5 is a circuit diagram of this embodiment operating in the first stage; Fig. 6 is a circuit diagram of this embodiment operating in the second stage; Fig. 7 is a circuit diagram of this embodiment operating in the third stage; Fig. 8 is a circuit diagram of this embodiment operating in the fourth stage; Fig. 9 is a circuit diagram of this embodiment operating in the fifth stage; Fig. 10 is a circuit diagram of this embodiment operating in the sixth stage; Fig. 11 is a circuit diagram of this embodiment operating in the seventh stage; Fig. 12 is a circuit diagram of this embodiment operating in the eighth stage; Figure 13 is a relational graph of different coupling coefficients and voltage gains of this embodiment; and FIG. 14 is a voltage gain curve diagram of the turns ratio and conduction ratio of the coupled inductor in this embodiment.

1:第一耦合電感 1: First coupled inductance

2:第二耦合電感 2: Second coupled inductor

N1、P1:第一繞組 N 1 , P 1 : first winding

N2、P2:第二繞組 N 2 , P 2 : Second winding

N3、P3:第三繞組 N 3 , P 3 : the third winding

S1:第一開關 S 1 : first switch

S2:第二開關 S 2 : second switch

DC:箝位二極體 D C : clamping diode

Cf:舉升電容 C f : Lift capacitor

D11:第一再生二極體 D 11 : first regenerative diode

C11:第一再生電容 C 11 : the first regenerative capacitor

D12:第一倍壓二極體 D 12 : The first voltage doubler diode

C12:第一倍壓電容 C 12 : the first voltage doubler capacitor

D21:第二再生二極體 D 21 : second regenerative diode

C21:第二再生電容 C 21 : Second regenerative capacitor

D22:第二倍壓二極體 D 22 : Second voltage doubler diode

C22:第二倍壓電容 C 22 : the second voltage doubler capacitor

O1:第一輸出級 O1: first output stage

C1:第一輸出電容 C 1 : the first output capacitor

Do1:第一輸出二極體 D o1 : the first output diode

O2:第二輸出級 O2: second output stage

C2:第二輸出電容 C 2 : Second output capacitor

Do2:第二輸出二極體 D o2 : second output diode

O3:第三輸出級 O3: third output stage

C3:第三輸出電容 C 3 : the third output capacitor

Do3:第三輸出二極體 D o3 : The third output diode

4:控制單元 4: Control unit

Claims (10)

一種高升壓直流轉換器裝置,包含: 一第一耦合電感及一第二耦合電感,每一個耦合電感具有一第一繞組、一第二繞組及一第三繞組,每一個繞組具有一第一端及一第二端,其中,該第一耦合電感的第一繞組的第一端與該第二耦合電感的第一繞組的第一端電連接一起以接收一呈直流的輸入電壓,該第一耦合電感的第二繞組的第二端電連接該第二耦合電感的第二繞組的第二端,該第二耦合電感的第三繞組的第二端電連接該第二耦合電感的第三繞組的第二端, 一第一開關,具有一電連接於該第一耦合電感的第一繞組的第二端的第一端,及一接地的第二端,且該第一開關受控制以切換於導通狀態和不導通狀態間,當該第一開關導通時,該第一耦合電感的第一繞組接收一電流進行充電; 一第二開關,具有一電連接於該第二耦合電感的第一繞組的第二端的第一端,及一接地的第二端,且該第二開關受控制以切換於導通狀態和不導通狀態間; 一箝位二極體,具有一電連接於該第二耦合電感的第一繞組的第二端的陽極,與一陰極; 一舉升電容,電連接該第一耦合電感的第一繞組的第二端與該箝位二極體的陰極間; 第一再生二極體,具有一電連接該第二耦合電感的第二繞組的第一端的陽極,與一陰極; 一第一再生電容,電連接該第一耦合電感的第二繞組的第一端與該第一再生二極體的陰極之間; 一第一倍壓二極體,具有一電連接該第一再生二極體的陰極的陽極,與一陰極; 一第一倍壓電容,電連接該該第二耦合電感的第二繞組的第一端與該第一倍壓二極體的陰極之間; 一第二再生二極體,具有一電連接該第一耦合電感的第三繞組的第一端的陽極,與一陰極; 一第二再生電容,電連接該第二耦合電感的第三繞組的第一端與該第二再生二極體的陰極之間; 一第二倍壓二極體,具有一電連接該第二再生二極體的陰極的陽極,與一陰極; 一第二倍壓電容,電連接該第一耦合電感的第三繞組的第一端與該第二倍壓二極體的陰極之間; 一第一輸出級,電連接該箝位二極體的陰極,用以根據來自該第一繞組與該舉升電容的放電,產生一呈直流的第一電壓; 一第二輸出級,電連接該第一倍壓二極體的陰極,用以根據來自該第二繞組與該第一倍壓電容的放電,產生一呈直流的第二電壓; 一第三輸出級,電連接該第二倍壓二極體的陰極,用以根據來自該第三繞組與該第二倍壓電容的放電,產生一呈直流的第三電壓; 該第一輸出級還與該第二輸出級與該第三輸出級疊接一起,產生一輸出電壓,該輸出電壓正比於該第一電壓與該第二電壓與該第三電壓的加總。 A high boost DC converter device comprising: A first coupled inductor and a second coupled inductor, each coupled inductor has a first winding, a second winding and a third winding, each winding has a first end and a second end, wherein the first The first end of the first winding of a coupled inductor is electrically connected to the first end of the first winding of the second coupled inductor to receive a DC input voltage, and the second end of the second winding of the first coupled inductor electrically connected to the second end of the second winding of the second coupled inductor, the second end of the third winding of the second coupled inductor is electrically connected to the second end of the third winding of the second coupled inductor, a first switch, having a first end electrically connected to the second end of the first winding of the first coupled inductor, and a second end connected to ground, and the first switch is controlled to switch between a conduction state and a non-conduction state During the state, when the first switch is turned on, the first winding of the first coupled inductor receives a current for charging; a second switch, having a first end electrically connected to the second end of the first winding of the second coupled inductor, and a second end connected to ground, and the second switch is controlled to switch between a conduction state and a non-conduction state between states; a clamping diode having an anode electrically connected to the second end of the first winding of the second coupled inductor, and a cathode; a lifting capacitor electrically connected between the second end of the first winding of the first coupling inductor and the cathode of the clamping diode; The first regenerative diode has an anode electrically connected to the first end of the second winding of the second coupled inductor, and a cathode; A first regenerative capacitor, electrically connected between the first end of the second winding of the first coupled inductor and the cathode of the first regenerative diode; a first voltage doubling diode having an anode electrically connected to the cathode of the first regenerative diode, and a cathode; A first voltage doubler capacitor, electrically connected between the first end of the second winding of the second coupled inductor and the cathode of the first voltage doubler diode; a second regenerative diode, having an anode electrically connected to the first end of the third winding of the first coupled inductor, and a cathode; A second regenerative capacitor, electrically connected between the first end of the third winding of the second coupled inductor and the cathode of the second regenerative diode; a second voltage doubling diode having an anode electrically connected to the cathode of the second regenerative diode, and a cathode; A second voltage doubler capacitor, electrically connected between the first end of the third winding of the first coupled inductor and the cathode of the second voltage doubler diode; a first output stage, electrically connected to the cathode of the clamping diode, for generating a first DC voltage according to the discharge from the first winding and the lifting capacitor; A second output stage, electrically connected to the cathode of the first voltage doubler diode, for generating a second DC voltage according to the discharge from the second winding and the first voltage doubler capacitor; A third output stage, electrically connected to the cathode of the second voltage doubler diode, for generating a third voltage in the form of direct current according to the discharge from the third winding and the second voltage doubler capacitor; The first output stage is also stacked with the second output stage and the third output stage to generate an output voltage, which is proportional to the sum of the first voltage, the second voltage, and the third voltage. 如請求項1所述的高升壓直流轉換器裝置,其中,該第一輸出級包括: 一第一輸出二極體,具有一電連接該舉升電容的一端的陽極,及一陰極;及 一第一輸出電容,電連接於該第一輸出二極體的陰極與接地之間,用以提供該第一電壓。 The high-boost DC converter device as claimed in claim 1, wherein the first output stage includes: a first output diode having an anode electrically connected to one end of the boost capacitor, and a cathode; and A first output capacitor is electrically connected between the cathode of the first output diode and ground to provide the first voltage. 如請求項2所述的高升壓直流轉換器裝置,其中,該第二輸出級包括: 一第二輸出二極體,具有一電連接該第一倍壓電容的一端的陽極,及一陰極;及 一第二輸出電容,電連接於該第二輸出二極體的陰極與該第一輸出電容之間,用以提供該第二電壓。 The high-boost DC converter device as claimed in claim 2, wherein the second output stage includes: a second output diode having an anode electrically connected to one end of the first voltage doubler capacitor, and a cathode; and A second output capacitor is electrically connected between the cathode of the second output diode and the first output capacitor to provide the second voltage. 如請求項3所述的高升壓直流轉換器裝置,其中,該第三輸出級包括: 一第三輸出二極體,具有一電連接該第二倍壓電容的一端的陽極,及一陰極;及 一第三輸出電容,電連接於該第三輸出二極體的陰極與該第二輸出電容之間,用以提供該第三電壓,其中,該第一輸出電容與該第二輸出電容與該第三輸出電容疊接一起。 The high-boost DC converter device as claimed in claim 3, wherein the third output stage includes: a third output diode having an anode electrically connected to one end of the second voltage doubler capacitor, and a cathode; and a third output capacitor electrically connected between the cathode of the third output diode and the second output capacitor to provide the third voltage, wherein the first output capacitor and the second output capacitor and the The third output capacitors are stacked together. 如請求項1所述的高升壓直流轉換器裝置,其中,每一第一繞組的第一端是打點端,每一第一繞組的第二端是非打點端。The high boost DC converter device as claimed in claim 1, wherein the first end of each first winding is a dotted end, and the second end of each first winding is a non-dotted end. 如請求項1所述的高升壓直流轉換器裝置,其中,每一第二繞組的第一端是打點端,每一第二繞組的第二端是非打點端。The high boost DC converter device as claimed in claim 1, wherein the first end of each second winding is a dotted end, and the second end of each second winding is a non-dotted end. 如請求項1所述的高升壓直流轉換器裝置,其中,該第一開關是一N型功率半導體電晶體,且該第一開關的第一端是汲極,該第一開關的第二端是源極。The high-boost DC converter device as described in Claim 1, wherein the first switch is an N-type power semiconductor transistor, and the first end of the first switch is a drain, and the second end of the first switch terminal is the source. 如請求項1所述的高升壓直流轉換器裝置,其中,該第二開關是一N型功率半導體電晶體,且該第二開關的第一端是汲極,該第二開關的第二端是源極。The high step-up DC converter device as described in claim 1, wherein the second switch is an N-type power semiconductor transistor, and the first end of the second switch is a drain, and the second end of the second switch terminal is the source. 如請求項1所述的高升壓直流轉換器裝置,更包括一控制單元,該控制單元產生一切換該第一開關的第一脈波調變信號及一切換該第二開關的第二脈波調變信號,該第一脈波調變信號與該第二脈波調變信號具有相同的周期時間。The high step-up DC converter device as described in claim 1, further comprising a control unit, the control unit generates a first pulse modulation signal for switching the first switch and a second pulse modulation signal for switching the second switch A pulse modulation signal, the first pulse modulation signal and the second pulse modulation signal have the same cycle time. 如請求項9所述的高升壓直流轉換器裝置,其中,該第一及第二脈波調變信號的周期時間的一部份重疊。The high-boost DC converter device as claimed in claim 9, wherein a part of the cycle time of the first and second pulse modulation signals overlaps.
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