TW202000472A - Laminate film and method for manufacturing laminate structure - Google Patents

Laminate film and method for manufacturing laminate structure Download PDF

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TW202000472A
TW202000472A TW108120657A TW108120657A TW202000472A TW 202000472 A TW202000472 A TW 202000472A TW 108120657 A TW108120657 A TW 108120657A TW 108120657 A TW108120657 A TW 108120657A TW 202000472 A TW202000472 A TW 202000472A
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resin layer
insulating resin
film
base film
laminated
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TW108120657A
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TWI834676B (en
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林達史
西村貴至
馬場奨
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日商積水化學工業股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

Provided is a laminate film in which it is possible to suppress spontaneous peeling of a base material film from an insulating resin layer during curing, and in which it is possible to suppress peeling defects in the base material film when the base material film is being peeled from the insulating resin layer after curing. The laminate film according to the present invention comprises a base material film and an insulating resin layer laminated on the obverse surface of the base material film, the laminate film being such that: at one end side of the laminate film, an end surface of the base material film juts farthest outward relative to an end surface of the insulating resin layer; and Y/X is 0.5-15, where X gf/cm is the peel strength of the base material film relative to the insulating resin layer, and Y mm is the distance by which the base material film juts out at the one end side.

Description

積層膜及積層構造體之製造方法Laminated film and method for manufacturing laminated structure

本發明係關於一種具備基材膜及絕緣樹脂層之積層膜。又,本發明係關於一種使用上述積層膜之積層構造體之製造方法。The present invention relates to a laminated film provided with a base film and an insulating resin layer. In addition, the present invention relates to a method for manufacturing a laminated structure using the above-mentioned laminated film.

先前,為了獲得半導體裝置、積層板及印刷配線板等電子零件而使用各種樹脂組合物。例如於多層印刷配線板中,為了形成用以使內部之層間絕緣之絕緣層,或形成位於表層部分之絕緣層而使用樹脂組合物。為了形成上述絕緣層而使用具備基材膜及絕緣樹脂層之積層膜。上述絕緣樹脂層係藉由將上述樹脂組合物製成膜狀而獲得。Previously, various resin compositions have been used to obtain electronic components such as semiconductor devices, laminates, and printed wiring boards. For example, in a multilayer printed wiring board, a resin composition is used in order to form an insulating layer for insulating interlayers inside, or to form an insulating layer located in a surface layer portion. In order to form the said insulating layer, the laminated film provided with a base film and an insulating resin layer is used. The insulating resin layer is obtained by forming the resin composition into a film.

於多層印刷配線板等之製造方法中,存在如下情形:於積層有基材膜及絕緣樹脂層之狀態下使該絕緣樹脂層硬化或預硬化而形成絕緣層(硬化物層或預備硬化物層),其後,自硬化或預硬化之絕緣樹脂層剝離基材膜。In the manufacturing method of a multilayer printed wiring board, etc., there is a case where the insulating resin layer is cured or pre-cured in a state where the base film and the insulating resin layer are laminated to form an insulating layer (hardened layer or pre-cured layer) ), and then, the substrate film is peeled off from the cured or pre-cured insulating resin layer.

於下述專利文獻1、2中記載有此種製造方法之一例。An example of such a manufacturing method is described in Patent Documents 1 and 2 below.

於下述專利文獻1中揭示有多層印刷配線板之製造方法,其具備如下步驟:於在電路基板之兩面或單面積層有絕緣層及塑膠膜之狀態下,自塑膠膜上向絕緣層照射二氧化碳氣體雷射,形成頂端直徑為100 μm以下之非貫通孔。上述絕緣層含有35質量%以上之無機填充材。The following Patent Document 1 discloses a method for manufacturing a multilayer printed wiring board, which includes the steps of: irradiating the insulating layer from the plastic film with the insulating layer and the plastic film on both sides or a single area of the circuit board A carbon dioxide gas laser forms a non-through hole with a tip diameter of 100 μm or less. The insulating layer contains 35% by mass or more of an inorganic filler.

於下述專利文獻2中揭示有具備以下之(A)~(F)步驟之電路基板之製造方法。(A)步驟,其將包含塑膠膜支持體及與該塑膠膜支持體接合之樹脂組合物層之附支持體之樹脂片材以樹脂組合物層與內層基板接合之方式積層於內層基板。(B)步驟,其係使樹脂組合物層熱硬化而形成絕緣層者,且該絕緣層與塑膠膜支持體之密接強度為2 gf/cm~18 gf/cm。(C)步驟,其自塑膠膜支持體上照射雷射而於絕緣層形成頂端直徑40 μm以下之導通孔。(D)步驟,其進行除膠渣處理。(E)步驟,其將塑膠膜支持體剝離。(F)步驟,其於絕緣層之表面形成導體層。 [先前技術文獻] [專利文獻]The following Patent Document 2 discloses a method of manufacturing a circuit board having the following steps (A) to (F). (A) Step of laminating a resin sheet with a support including a plastic film support and a resin composition layer bonded to the plastic film support on the inner substrate in such a manner that the resin composition layer is bonded to the inner substrate . Step (B), which is to thermally harden the resin composition layer to form an insulating layer, and the adhesion strength between the insulating layer and the plastic film support is 2 gf/cm to 18 gf/cm. In step (C), a laser is irradiated from the plastic film support to form a via hole with a tip diameter of 40 μm or less in the insulating layer. Step (D), which carries out the scum removal treatment. (E) Step, which peels off the plastic film support. Step (F), which forms a conductor layer on the surface of the insulating layer. [Prior Technical Literature] [Patent Literature]

[專利文獻1]WO2009/066759A1 [專利文獻2]日本專利特開2015-211085號公報[Patent Literature 1] WO2009/066759A1 [Patent Document 2] Japanese Patent Laid-Open No. 2015-211085

[發明所欲解決之問題][Problems to be solved by the invention]

於如專利文獻1、2中所記載之先前之積層膜(具備基材膜及絕緣樹脂層之積層膜)中,於在積層有基材膜及絕緣樹脂層之狀態下使該絕緣樹脂層硬化之情形時,有時於硬化時基材膜自絕緣樹脂層自然剝離。於產生上述自然剝離之情形時,有時絕緣樹脂層產生硬化不均。又,於如專利文獻1、2中所記載之先前之積層膜中,有時於硬化後自絕緣樹脂層剝離基材膜時,無法良好地將基材膜與絕緣樹脂層剝離而基材膜破裂。In the previous laminated film (laminated film provided with a base film and an insulating resin layer) as described in Patent Documents 1 and 2, the insulating resin layer is cured with the base film and the insulating resin layer laminated In this case, the base film may naturally peel from the insulating resin layer during curing. When the above natural peeling occurs, the insulating resin layer may be unevenly cured. In addition, in the previous laminated films described in Patent Documents 1 and 2, when the base film is peeled from the insulating resin layer after curing, the base film and the insulating resin layer may not be peeled off satisfactorily and the base film rupture.

本發明之目的在於提供一種積層膜,其可抑制於硬化時基材膜自絕緣樹脂層自然剝離,且可抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良。又,本發明之目的亦在於提供一種使用上述積層膜之積層構造體之製造方法。 [解決問題之技術手段]An object of the present invention is to provide a laminated film that can suppress the natural peeling of the base film from the insulating resin layer during curing, and can suppress the peeling failure of the base film when the base film is peeled from the insulating resin layer after curing. In addition, an object of the present invention is to provide a method for manufacturing a laminated structure using the above-mentioned laminated film. [Technical means to solve the problem]

根據本發明之廣泛態樣,提供一種積層膜,其具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層,且於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出,於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X為0.5以上15以下。According to a broad aspect of the present invention, there is provided a laminated film including a base film and an insulating resin layer laminated on the surface of the base film, and on one end side of the laminated film, with respect to the end surface of the insulating resin layer , The end surface of the base film protrudes to the maximum extent, the peeling strength of the base film with respect to the insulating resin layer is set to X gf/cm, and the extension distance of the base film on the one end side is When it is set to Y mm, Y/X is 0.5 or more and 15 or less.

於本發明之積層膜之某特定態樣中,上述X為0.3以上9以下。In a specific aspect of the laminated film of the present invention, the above X is 0.3 or more and 9 or less.

於本發明之積層膜之某特定態樣中,上述Y為0.5以上20以下。In a specific aspect of the laminated film of the present invention, the above Y is 0.5 or more and 20 or less.

於本發明之積層膜之某特定態樣中,上述基材膜之厚度為25 μm以上。In a specific aspect of the laminated film of the present invention, the thickness of the base film is 25 μm or more.

於本發明之積層膜之某特定態樣中,上述基材膜之上述絕緣樹脂層側之表面之算術平均粗糙度Ra為5 nm以上且未達400 nm。In a specific aspect of the laminated film of the present invention, the arithmetic average roughness Ra of the surface of the base film on the side of the insulating resin layer is 5 nm or more and less than 400 nm.

於本發明之積層膜之某特定態樣中,上述絕緣樹脂層含有環氧化合物、無機填充材及硬化劑。In a specific aspect of the laminated film of the present invention, the insulating resin layer contains an epoxy compound, an inorganic filler, and a hardener.

於本發明之積層膜之某特定態樣中,上述硬化劑含有酚化合物、氰酸酯化合物、順丁烯二醯亞胺化合物或活性酯化合物。In a specific aspect of the laminated film of the present invention, the hardener contains a phenol compound, a cyanate compound, a maleimide compound or an active ester compound.

於本發明之積層膜之某特定態樣中,於積層膜之與上述一端相反之另一端側中,上述基材膜及上述絕緣樹脂層之端面對齊,或者於積層膜之上述一端側及與上述一端相反之另一端側兩者,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出,且上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離。In a specific aspect of the laminated film of the present invention, on the other end side of the laminated film opposite to the one end, the end surfaces of the base film and the insulating resin layer are aligned, or on the one end side of the laminated film and the The two opposite ends of the one end are opposite to the end face of the insulating resin layer, the end face of the base material film extends outward, and the extension distance of the base material film of the other end side is smaller than that of the one end side The extension distance of the base film.

於本發明之積層膜之某特定態樣中,上述絕緣樹脂層於60℃以上180℃以下之溫度範圍下之最低熔融黏度為5 mPa・s以上。In a specific aspect of the laminated film of the present invention, the minimum melt viscosity of the insulating resin layer in a temperature range of 60°C or more and 180°C or less is 5 mPa·s or more.

於本發明之積層膜之某特定態樣中,上述絕緣樹脂層較佳為用以於多層印刷配線板形成絕緣層。In a specific aspect of the laminated film of the present invention, the insulating resin layer is preferably used to form an insulating layer on a multilayer printed wiring board.

根據本發明之廣泛態樣,提供一種積層構造體之製造方法,其包括:積層步驟,使用上述積層膜,於積層有上述基材膜及上述絕緣樹脂層之狀態下,將上述絕緣樹脂層之與上述基材膜相反側之表面積層於表面具有金屬層之積層對象構件上;以及導通孔形成步驟,其於積層有上述基材膜及上述絕緣樹脂層之狀態下,自上述基材膜側對上述絕緣樹脂層照射雷射而形成導通孔。According to a broad aspect of the present invention, there is provided a method for manufacturing a laminated structure, comprising: a laminating step, using the laminated film, in a state where the base film and the insulating resin layer are laminated, the insulating resin layer The surface area layer on the opposite side of the base material film is on the object to be laminated having a metal layer on the surface; and a via hole forming step from the base material film side with the base material film and the insulating resin layer laminated The insulating resin layer is irradiated with laser light to form via holes.

於本發明之積層構造體之製造方法之某特定態樣中,其於上述積層步驟與上述導通孔形成步驟之間具備使上述絕緣樹脂層硬化之硬化步驟。 [發明之效果]In a specific aspect of the method for manufacturing a laminated structure of the present invention, a curing step for curing the insulating resin layer is provided between the laminating step and the via hole forming step. [Effect of invention]

本發明之積層膜具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層。於本發明之積層膜中,於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。於本發明之積層膜中,於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X為0.5以上15以下。本發明之積層膜由於具備上述構成,故而可抑制於硬化時基材膜自絕緣樹脂層自然剝離,且可抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良。The laminated film of the present invention includes a base film and an insulating resin layer laminated on the surface of the base film. In the laminated film of the present invention, on one end side of the laminated film, the end surface of the base film protrudes to the outside with respect to the end surface of the insulating resin layer. In the laminated film of the present invention, when the peel strength of the base film with respect to the insulating resin layer is X gf/cm, and the extension distance of the base film on the one end side is Y mm, Y /X is 0.5 or more and 15 or less. Since the laminated film of the present invention has the above-mentioned configuration, it is possible to suppress the natural peeling of the base film from the insulating resin layer during curing, and to suppress the peeling failure of the base film when the base film is peeled from the insulating resin layer after curing.

以下,對本發明詳細地進行說明。Hereinafter, the present invention will be described in detail.

本發明之積層膜具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層。The laminated film of the present invention includes a base film and an insulating resin layer laminated on the surface of the base film.

本發明之積層膜具備以下之構成(0)。The laminated film of the present invention has the following configuration (0).

(0)於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。(以下,有時記為積層膜(0))(0) On one end side of the laminated film, the end surface of the base film protrudes to the outside with respect to the end surface of the insulating resin layer to the greatest extent. (Hereinafter, sometimes referred to as a laminated film (0))

於本發明之積層膜中,於所有端中,一端側之伸出距離最大。In the laminated film of the present invention, the extension distance of one end side is the largest among all the ends.

於本發明之積層膜中,於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X(Y相對於X之比)為0.5以上15以下。In the laminated film of the present invention, when the peel strength of the base film with respect to the insulating resin layer is X gf/cm, and the extension distance of the base film on the one end side is Y mm, Y /X (the ratio of Y to X) is 0.5 or more and 15 or less.

於本發明之積層膜中,於所有端之中,一端側之伸出距離最大,因此上述距離Y為最大程度伸出之距離。In the laminated film of the present invention, the extension distance of one end side is the largest among all the ends, so the above-mentioned distance Y is the distance of the greatest extension.

本發明之積層膜由於具備上述構成,故而可抑制於硬化時基材膜自絕緣樹脂層自然剝離,且可抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良。本發明之積層膜可抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之破裂。Since the laminated film of the present invention has the above-mentioned configuration, it is possible to suppress the natural peeling of the base film from the insulating resin layer during curing, and to suppress the peeling failure of the base film when the base film is peeled from the insulating resin layer after curing. The laminated film of the present invention can suppress cracking of the base film when the base film is peeled from the insulating resin layer after curing.

再者,上述硬化時及上述硬化後亦包括預硬化時及預硬化後。In addition, the above-mentioned hardening time and after the hardening also include the pre-hardening time and the post-hardening time.

於本發明之積層膜中,由於基材膜之一端側伸出,故而可於硬化後自一端側自絕緣樹脂層剝離基材膜。In the laminated film of the present invention, since one end side of the base film protrudes, the base film can be peeled from the insulating resin layer from one end side after curing.

本發明之積層膜由於具備上述構成,故而可抑制於預硬化時基材膜自絕緣樹脂層自然剝離,且亦可抑制於預硬化後於自絕緣樹脂層剝離基材膜時基材膜之剝離不良。Since the laminated film of the present invention has the above-mentioned structure, it is possible to suppress the natural peeling of the base film from the insulating resin layer during pre-curing, and it is also possible to suppress the peeling of the base film from the insulating resin layer after pre-curing. bad.

又,本發明之積層膜由於具備上述構成,故而可抑制於基板之搬送時,或用以形成導通孔之雷射照射時基材膜自絕緣樹脂層自然剝離。In addition, since the laminated film of the present invention has the above-mentioned structure, it is possible to suppress the natural peeling of the base film from the insulating resin layer when the substrate is transported or when laser irradiation for forming a via hole is performed.

作為上述構成(0)所包含之構成,可列舉以下之構成(1)及以下之構成(2)等。本發明之積層膜亦可具備以下之構成(1)或以下之構成(2)。本發明之積層膜可具備以下之構成(1),亦可具備以下之構成(2)。Examples of the structure included in the above structure (0) include the following structure (1) and the following structure (2). The laminated film of the present invention may also have the following configuration (1) or the following configuration (2). The laminated film of the present invention may have the following structure (1) or the following structure (2).

(1)於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。於積層膜之與上述一端相反之另一端側,上述基材膜及上述絕緣樹脂層之端面對齊。(以下,有時記為積層膜(1))(1) On one end side of the laminated film, the end surface of the base film protrudes to the outside with respect to the end surface of the insulating resin layer to the greatest extent. On the other end side of the laminated film opposite to the one end, the end surfaces of the base film and the insulating resin layer are aligned. (Hereinafter, sometimes referred to as a laminated film (1))

(2)於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。於積層膜之與上述一端相反之另一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出。上述另一端側之上述基材膜之伸出距離與上述一端側之上述基材膜之伸出距離相等或小於上述一端側之上述基材膜伸出之距離。(以下,有時記為積層膜(2))(2) On one end side of the laminated film, the end surface of the base film protrudes to the outside with respect to the end surface of the insulating resin layer to the greatest extent. On the other end side of the laminated film opposite to the one end, the end face of the base film protrudes outward with respect to the end face of the insulating resin layer. The extension distance of the base film on the other end side is equal to or shorter than the extension distance of the base film on the one end side or less than the extension distance of the base film on the one end side. (Hereinafter, sometimes referred to as a laminated film (2))

上述一端與上述另一端係指於積層膜中相對向之兩端。The one end and the other end refer to opposite ends in the laminated film.

於上述構成(2)中,上述另一端側之上述基材膜伸出之距離與上述一端側之上述基材膜伸出之距離相同,或者小於上述一端側之上述基材膜伸出之距離。In the above configuration (2), the distance from which the base film on the other end side protrudes is the same as the distance from which the base film on the one end side protrudes, or is smaller than the distance that the base film on the one end side protrudes .

於積層膜之所有端中,於基材膜與絕緣樹脂層之端面對齊之情形時,即,先前之積層膜之情形時,於硬化時基材膜容易自絕緣樹脂層自然剝離。又,於先前之積層膜之情形時,於硬化後自絕緣樹脂層剝離基材膜時容易產生基材膜之破裂。因此,先前之積層膜係難以抑制於硬化時基材膜自絕緣樹脂層自然剝離,且難以抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之破裂。In all the ends of the laminated film, when the base film is aligned with the end surface of the insulating resin layer, that is, in the case of the previous laminated film, the base film is easily peeled off from the insulating resin layer when cured. Moreover, in the case of the previous laminated film, the base film is likely to crack when the base film is peeled from the insulating resin layer after curing. Therefore, the previous laminated film is difficult to suppress the natural peeling of the base film from the insulating resin layer during curing, and it is difficult to suppress the cracking of the base film when the base film is peeled from the insulating resin layer after curing.

就進一步抑制於硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,積層膜(1)與積層膜(2)中較佳為積層膜(1)。From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing, and further suppressing the peeling defects of the base film when peeling the base film from the insulating resin layer after curing, the laminated film (1) and the laminated film Among (2), the laminated film (1) is preferable.

積層膜(2)較佳為具備以下之構成(2A)。The laminated film (2) preferably has the following structure (2A).

(2A)於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。於積層膜之與上述一端相反之另一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出。上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離。(以下,有時記為積層膜(2A))(2A) On one end side of the laminated film, the end surface of the base film protrudes to the outside with respect to the end surface of the insulating resin layer to the greatest extent. On the other end side of the laminated film opposite to the one end, the end face of the base film protrudes outward with respect to the end face of the insulating resin layer. The extension distance of the base film on the other end side is smaller than the extension distance of the base film on the one end side. (Hereinafter, sometimes referred to as a laminated film (2A))

於本發明之積層膜中,將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm。因此,於積層膜(2)、(2A)中,上述Y表示相對於上述絕緣樹脂層之端面,上述基材膜之端面分別向外側伸出之距離中較大之距離。In the laminated film of the present invention, the peel strength of the base film with respect to the insulating resin layer is X gf/cm, and the extension distance of the base film on the one end side is Y mm. Therefore, in the build-up films (2) and (2A), the above Y represents a greater distance of the end surfaces of the base film extending outward from the end surfaces of the insulating resin layer.

就抑制於硬化時基材膜自絕緣樹脂層自然剝離,且抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,Y/X(Y相對於X之比)為0.5以上15以下。若上述Y/X未達0.5,則於硬化時基材膜容易自絕緣樹脂層自然剝離。若上述Y/X超過15,則於硬化後自絕緣樹脂層剝離基材膜時無法將基材膜與絕緣樹脂層良好地剝離,基材膜容易破裂。From the viewpoint of suppressing the natural peeling of the base film from the insulating resin layer during curing and suppressing the peeling failure of the base film when the base film is peeled from the insulating resin layer after curing, Y/X (Y to X ratio ) Is 0.5 or more and 15 or less. If the above-mentioned Y/X is less than 0.5, the base film easily peels off from the insulating resin layer during curing. If the above Y/X exceeds 15, the base film and the insulating resin layer cannot be peeled off well when the base film is peeled from the insulating resin layer after curing, and the base film is easily broken.

就進一步抑制於硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,上述Y/X較佳為0.7以上,更佳為1.0以上,且較佳為13以下,更佳為11以下。From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing, and further suppressing the peeling defect of the base film when peeling the base film from the insulating resin layer after curing, the above Y/X is preferably 0.7 The above is more preferably 1.0 or more, and preferably 13 or less, and more preferably 11 or less.

就進一步抑制於硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,上述X較佳為0.3以上,且較佳為9以下。From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing, and further suppressing the peeling defects of the base film when peeling the base film from the insulating resin layer after curing, the above X is preferably 0.3 or more, And it is preferably 9 or less.

就進一步抑制於硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,上述Y較佳為0.5以上,且較佳為20以下。From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing and further suppressing the peeling failure of the base film when peeling the base film from the insulating resin layer after curing, the above Y is preferably 0.5 or more, And it is preferably 20 or less.

上述基材膜相對於上述絕緣樹脂層之剝離強度(即,X)較佳為0.3 gf/cm以上,更佳為0.5 gf/cm以上,且較佳為9 gf/cm以下,更佳為7 gf/cm以下。若上述剝離強度為上述下限以上,則可抑制於基板之搬送時基材膜自絕緣樹脂層自然剝離,又,即便於用於形成導通孔之雷射照射時,亦可抑制基材膜自絕緣樹脂層自然剝離。若上述剝離強度為上述上限以下,則可提高剝離強度,又,可抑制除膠渣處理後之粗糙度變高。The peel strength (ie, X) of the base film with respect to the insulating resin layer is preferably 0.3 gf/cm or more, more preferably 0.5 gf/cm or more, and preferably 9 gf/cm or less, more preferably 7 Below gf/cm. If the peel strength is above the lower limit or more, the substrate film can be naturally peeled from the insulating resin layer when the substrate is transported, and the substrate film can also be inhibited from self-insulating even during laser irradiation for forming via holes The resin layer peels off naturally. If the peel strength is equal to or lower than the upper limit, the peel strength can be increased, and the roughness after the removal of the dross can be suppressed from increasing.

上述基材膜相對於上述絕緣樹脂層之剝離強度可使用拉力試驗機(島津製作所公司製造之「AG-5000B」),於十字頭速度5 mm/min之條件下進行測定。The peel strength of the base film with respect to the insulating resin layer can be measured using a tensile tester ("AG-5000B" manufactured by Shimadzu Corporation) at a crosshead speed of 5 mm/min.

上述一端側之上述基材膜之伸出距離(即,Y)較佳為0.5 mm以上,更佳為1 mm以上,且較佳為20 mm以下,更佳為15 mm以下。若上述一端側之上述基材膜之伸出距離為上述下限以上,則可使用自動剝離裝置於硬化後自絕緣樹脂層良好地剝離基材膜,又,於積層膜之製造時於將積層膜之一端或另一端切開時可抑制絕緣樹脂層之龜裂或破裂。若上述一端側之上述基材膜之伸出距離為上述上限以下,則可抑制於積層膜之搬送時基材膜自絕緣樹脂層自然剝離,又,可抑制製造成本。The extension distance (ie, Y) of the base film on the one end side is preferably 0.5 mm or more, more preferably 1 mm or more, and preferably 20 mm or less, more preferably 15 mm or less. If the extension distance of the base film on the one end side is more than the above lower limit, an automatic peeling device can be used to peel the base film from the insulating resin layer after curing, and when the laminated film is manufactured, the laminated film When one end or the other end is cut, it can suppress the cracking or cracking of the insulating resin layer. If the extension distance of the base film on the one end side is equal to or less than the upper limit, the base film can be naturally peeled from the insulating resin layer during the transport of the build-up film, and the manufacturing cost can be suppressed.

關於上述積層膜,較佳為於上述絕緣樹脂層之與上述基材膜側相反之表面上積層保護膜。Regarding the above-mentioned laminated film, it is preferable to deposit a protective film on the surface of the insulating resin layer opposite to the side of the base film.

作為於上述積層膜(0)、(1)之一端側,相對於上述絕緣樹脂層之端面,使上述基材膜之端面向外側伸出之方法,可列舉於積層上述基材膜及上述絕緣樹脂層時錯開端面之方法。As a method of extending the end face of the base material film outward from the end face of the insulating resin layer on one end side of the laminated films (0) and (1), the lamination of the base material film and the insulation The method of staggering the end faces of the resin layer.

作為於上述積層膜(2)之一端側及與上述一端相反之另一端側兩者中,相對於上述絕緣樹脂層之端面,使上述基材膜之端面向外側伸出之方法,可列舉於積層上述基材膜及上述絕緣樹脂層時錯開端面之方法。於積層膜(2)中,對端面之錯開距離進行調整。As a method of extending the end surface of the base material film outward from the end surface of the insulating resin layer on both the one end side of the build-up film (2) and the other end side opposite to the one end, A method of staggering the end faces when stacking the base film and the insulating resin layer. In the laminated film (2), the offset distance of the end face is adjusted.

作為於上述積層膜(1)之與上述一端相反之另一端側,將上述基材、上述絕緣樹脂層及上述保護膜之端面對齊之方法,可列舉以下之方法。於積層上述基材膜及上述絕緣樹脂層時將端面對齊之方法;以及將上述基材膜與上述絕緣樹脂層之積層體、或上述基材膜、上述絕緣樹脂層及上述保護膜之積層體切割成長條之方法。As a method of aligning the end surfaces of the base material, the insulating resin layer, and the protective film on the other end side of the laminated film (1) opposite to the one end, the following method may be mentioned. A method of aligning the end surfaces when laminating the base film and the insulating resin layer; and a laminate of the base film and the insulating resin layer, or a laminate of the base film, the insulating resin layer, and the protective film The method of cutting long bars.

作為使上述積層膜(2A)之上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離的方法,可列舉以下之方法。於積層上述基材膜及上述絕緣樹脂層時,使另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離的方法。將基材膜及絕緣樹脂層中之基材膜切割成長條之方法。將基材膜、絕緣樹脂層及保護膜中之基材膜及保護膜切割成長條之方法。As a method of making the extension distance of the base material film on the other end side of the build-up film (2A) smaller than the extension distance of the base material film on the one end side, the following method may be mentioned. When laminating the base film and the insulating resin layer, a method of making the extension distance of the base film on the other end side smaller than the extension distance of the base film on the one end side. A method for cutting a base film in a base film and an insulating resin layer into long strips. Method for cutting the base film and the protective film among the base film, the insulating resin layer and the protective film into long strips.

本發明之積層膜之製造方法較佳為具備以下之(A)或(B)之構成。製造方法(A)、(B)為積層膜(0)之製造方法。製造方法(A)為積層膜(1)之製造方法,製造方法(B)為積層膜(2)之製造方法。積層膜(1)之製造方法較佳為具備以下之構成(A)。積層膜(2)之製造方法較佳為具備以下之構成(B)。The method for manufacturing a laminated film of the present invention preferably has the following structure (A) or (B). The manufacturing methods (A) and (B) are methods for manufacturing the laminated film (0). The manufacturing method (A) is a manufacturing method of a laminated film (1), and the manufacturing method (B) is a manufacturing method of a laminated film (2). The manufacturing method of the laminated film (1) preferably has the following structure (A). The manufacturing method of the laminated film (2) preferably has the following structure (B).

(A)積層膜(1)之製造方法具備第1步驟:於基材膜之表面上以相對於絕緣樹脂層之一端側之端面,上述基材膜之端面向外側伸出之方式配置絕緣樹脂層。積層膜(1)之製造方法較佳為具備第2步驟:於上述絕緣樹脂層之與上述基材膜側相反之表面上配置保護膜。於積層膜(1)之製造方法中,獲得在與上述絕緣樹脂層之上述一端相對應之積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出之積層膜。於積層膜(1)之製造方法中,獲得於積層膜之與上述一端相反之另一端側,上述基材膜與上述絕緣樹脂層之端面對齊之積層膜(1)。(A) The manufacturing method of the laminated film (1) includes the first step: disposing the insulating resin on the surface of the base film so that the end face of one end side of the insulating resin layer extends outward from the end surface of the base film Floor. The method for manufacturing the build-up film (1) preferably includes a second step: disposing a protective film on the surface of the insulating resin layer opposite to the base film side. In the manufacturing method of the build-up film (1), one end side of the build-up film corresponding to the one end of the insulating resin layer, with respect to the end face of the insulating resin layer, the end face of the base film extends outward Laminated film. In the manufacturing method of the build-up film (1), a build-up film (1) obtained on the other end side of the build-up film opposite to the one end and in which the base film and the end surface of the insulating resin layer are aligned.

(B)積層膜(2)之製造方法具備第1步驟:於基材膜之表面上以相對於絕緣樹脂層之一端側之端面,上述基材膜之端面向外側伸出之方式配置絕緣樹脂層。於該第1步驟中,較佳為於基材膜之表面上以相對於絕緣樹脂層之一端側及與上述一端相反之另一端側兩端面,上述基材膜之端面向外側伸出之方式配置絕緣樹脂層。積層膜(2)之製造方法較佳為具備第2步驟:於上述絕緣樹脂層之與上述基材膜側相反之表面上配置保護膜。於積層膜(2)之製造方法中,獲得於積層膜之一端側及與上述一端相反之另一端側兩者中,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出之積層膜(2)。於積層膜(2)之製造方法中,獲得上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離的積層膜(2)。(B) The manufacturing method of the laminated film (2) includes the first step: disposing the insulating resin on the surface of the base material film so that the end surface of one end side of the insulating resin layer extends outward from the end surface of the base material film Floor. In the first step, it is preferable that the end surface of the base film protrudes outward with respect to one end side of the insulating resin layer and the other end side opposite to the one end on the surface of the base film Configure insulating resin layer. The manufacturing method of the build-up film (2) preferably includes a second step: disposing a protective film on the surface of the insulating resin layer opposite to the base film side. In the manufacturing method of the build-up film (2), obtained on both the one end side of the build-up film and the other end side opposite to the one end, the end face of the base film protrudes outward with respect to the end face of the insulating resin layer Laminated film (2). In the manufacturing method of the build-up film (2), a build-up film (2) in which the extension distance of the base film on the other end side is smaller than the extension distance of the base film on the one end side is obtained.

本發明之積層膜之製造方法(A)較佳為進而具備第3步驟:於上述第2步驟之後,於上述絕緣樹脂層之與上述一端相反之另一端側中,將上述基材膜、上述絕緣樹脂層及上述保護膜之端面對齊。於本發明之積層膜之製造方法(A)中,亦可於上述第2步驟中,於上述絕緣樹脂層之與上述一端相反之另一端側,將上述基材膜、上述絕緣樹脂層及上述保護膜之端面對齊。The manufacturing method (A) of the laminated film of the present invention preferably further includes a third step: after the second step, on the other end side of the insulating resin layer opposite to the one end, the base film, the above The end surfaces of the insulating resin layer and the protective film are aligned. In the manufacturing method (A) of the laminated film of the present invention, in the second step, the base film, the insulating resin layer and the above may be formed on the other end side of the insulating resin layer opposite to the one end The end faces of the protective film are aligned.

本發明之積層膜之製造方法(B)較佳為進而具備第3步驟:於上述第2步驟之後,於上述絕緣樹脂層之與上述一端相反之另一端側,使上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離。The manufacturing method (B) of the laminated film of the present invention preferably further includes a third step: after the second step, on the other end side of the insulating resin layer opposite to the one end, the base on the other end side The projecting distance of the material film is smaller than the projecting distance of the base film on the one end side.

就於積層膜(1)之另一端側使端面進一步平坦之觀點、使積層膜(2)之上述另一端側之上述基材膜之伸出距離進一步小於上述一端側之上述基材膜之伸出距離的觀點而言,較佳為以下述方式切割成長條。較佳為於上述第3步驟中將上述絕緣樹脂層切割成長條。較佳為於上述第3步驟中,將上述基材膜、上述絕緣樹脂層及上述保護膜切割成長條。From the viewpoint of further flattening the end surface on the other end side of the laminated film (1), the extension distance of the base film on the other end side of the laminated film (2) is further smaller than the extension of the base film on the one end side From the standpoint of distance, it is preferable to cut the long bar in the following manner. Preferably, the insulating resin layer is cut into long strips in the third step. Preferably, in the third step, the base film, the insulating resin layer, and the protective film are cut into long strips.

於本發明之積層膜中,於絕緣樹脂層之表面通常積層有金屬層等被接著體(例如,基板與作為金屬之配線之積層體等)。於上述積層膜具備保護膜之情形時,於上述積層膜中,於使用絕緣樹脂層時剝離保護膜。於保護膜剝離後之上述絕緣樹脂層之表面通常積層有金屬層等被接著體(例如,基板與作為金屬之配線之積層體等)。In the laminated film of the present invention, a adherend such as a metal layer is usually laminated on the surface of the insulating resin layer (for example, a laminate of a substrate and a metal wiring, etc.). When the laminated film includes a protective film, the protective film is peeled off when the insulating resin layer is used in the laminated film. After the protective film is peeled off, the surface of the above-mentioned insulating resin layer is usually laminated with an adherend such as a metal layer (for example, a laminate of a substrate and a wiring as a metal, etc.).

以下,參照圖式,具體地說明本發明。Hereinafter, the present invention will be specifically described with reference to the drawings.

圖1係表示本發明之第1實施形態之積層膜之剖視圖。圖1係表示上述積層膜(1)之剖視圖。Fig. 1 is a cross-sectional view showing a laminated film according to a first embodiment of the present invention. Fig. 1 is a cross-sectional view showing the above-mentioned laminated film (1).

積層膜1具有一端1a、及與一端1a相反之另一端1b。積層膜1之一端1a及另一端1b為相對向之兩側之端部。The laminated film 1 has one end 1a and the other end 1b opposite to the one end 1a. One end 1a and the other end 1b of the laminated film 1 are the ends on opposite sides.

積層膜1具備基材膜2及絕緣樹脂層3。絕緣樹脂層3係積層於基材膜2之第1表面2a上。The laminated film 1 includes a base film 2 and an insulating resin layer 3. The insulating resin layer 3 is laminated on the first surface 2a of the base film 2.

於積層膜1之連結一端1a與另一端1b之方向上,基材膜2之尺寸大於絕緣樹脂層3之尺寸。於積層膜1之連結一端1a及另一端1b之方向上,絕緣樹脂層3之尺寸小於基材膜2之尺寸。In the direction connecting the one end 1 a and the other end 1 b of the laminated film 1, the size of the base film 2 is larger than the size of the insulating resin layer 3. In the direction connecting the one end 1 a and the other end 1 b of the laminated film 1, the size of the insulating resin layer 3 is smaller than the size of the base film 2.

於積層膜1之一端1a側,相對於絕緣樹脂層3之端面,基材膜2之端面向外側伸出。於積層膜1之一端1a,基材膜2與絕緣樹脂層3之端面不對齊。於積層膜1之一端1a側,在基材膜2之第1表面2a上存在未積層絕緣樹脂層3之部分。On one end 1 a side of the laminated film 1, the end surface of the base film 2 protrudes outward with respect to the end surface of the insulating resin layer 3. At one end 1a of the laminated film 1, the base film 2 and the end surface of the insulating resin layer 3 are not aligned. On the first end 1 a side of the laminated film 1, there is a portion where the insulating resin layer 3 is not laminated on the first surface 2 a of the base film 2.

於積層膜1之一端1a側,基材膜2之伸出距離為Y mm。On the one end 1a side of the laminated film 1, the projecting distance of the base film 2 is Y mm.

於積層膜1之另一端1b側,基材膜2與絕緣樹脂層3之端面對齊。On the other end 1b side of the laminated film 1, the base film 2 and the end surface of the insulating resin layer 3 are aligned.

圖2係表示本發明之第2實施形態之積層膜之剖視圖。圖2係表示上述積層膜(2)之剖視圖。2 is a cross-sectional view showing a laminated film according to a second embodiment of the present invention. Fig. 2 is a cross-sectional view showing the above-mentioned laminated film (2).

積層膜1A具有一端1Aa、及與一端1Aa相反之另一端1Ab。積層膜1A之一端1Aa及另一端1Ab為相對向之兩側之端部。The laminated film 1A has one end 1Aa and the other end 1Ab opposite to the one end 1Aa. One end 1Aa and the other end 1Ab of the laminated film 1A are the ends on opposite sides.

積層膜1A具備基材膜2A及絕緣樹脂層3A。絕緣樹脂層3係積層於基材膜2A之第1表面2Aa上。The laminated film 1A includes a base film 2A and an insulating resin layer 3A. The insulating resin layer 3 is laminated on the first surface 2Aa of the base film 2A.

於積層膜1A之連結一端1Aa與另一端1Ab之方向上,基材膜2A之尺寸大於絕緣樹脂層3A之尺寸。於積層膜1A之連結一端1Aa與另一端1Ab之方向上,絕緣樹脂層3A之尺寸小於基材膜2A之尺寸。In the direction connecting the one end 1Aa and the other end 1Ab of the laminated film 1A, the size of the base film 2A is larger than the size of the insulating resin layer 3A. In the direction connecting the one end 1Aa and the other end 1Ab of the laminated film 1A, the size of the insulating resin layer 3A is smaller than the size of the base film 2A.

於積層膜1A之一端1Aa側,相對於絕緣樹脂層3A之端面,基材膜2A之端面向外側伸出。於積層膜1A之一端1Aa,基材膜2A與絕緣樹脂層3A之端面不對齊。於積層膜1A之一端1Aa側,基材膜2A之第1之表面2Aa上存在未積層絕緣樹脂層3A之部分。On one end 1Aa side of the laminated film 1A, the end surface of the base film 2A protrudes outward with respect to the end surface of the insulating resin layer 3A. At one end 1Aa of the laminated film 1A, the end surface of the base film 2A and the insulating resin layer 3A are not aligned. On the first end 1Aa side of the laminated film 1A, there is a portion where the insulating resin layer 3A is not laminated on the first surface 2Aa of the base film 2A.

於積層膜1A之另一端1Ab側,相對於絕緣樹脂層3A之端面,基材膜2A之端面向外側伸出。於積層膜1A之另一端1Ab,基材膜2A及絕緣樹脂層3A之端面不對齊。於積層膜1A之另一端1Ab側,於基材膜2A之第1表面2Aa上存在未積層絕緣樹脂層3A之部分。On the other end 1Ab side of the laminated film 1A, the end surface of the base film 2A protrudes outward with respect to the end surface of the insulating resin layer 3A. At the other end 1Ab of the laminated film 1A, the end surfaces of the base film 2A and the insulating resin layer 3A are not aligned. On the other end 1Ab side of the laminated film 1A, there is a portion where the insulating resin layer 3A is not laminated on the first surface 2Aa of the base film 2A.

積層膜1A之另一端1Ab側之基材膜2A之伸出距離小於一端1Aa側之基材膜2A之伸出距離。The projecting distance of the base film 2A on the other end 1Ab side of the laminated film 1A is smaller than the projecting distance of the base film 2A on the one end 1Aa side.

於積層膜1A之一端1Aa側,基材膜2A之伸出距離為Y mm。On the side of one end 1Aa of the laminated film 1A, the projecting distance of the base film 2A is Y mm.

上述積層膜較佳為具有MD(Machine Direction,縱向)方向、及TD(Transverse Direction,橫向)方向。MD方向係製造積層膜時之積層膜之行進方向,例如為長度方向。TD方向係與製造積層膜時之積層膜之行進方向正交之方向,且為與積層膜之厚度方向正交之方向。於上述積層膜具有MD方向及TD方向之情形時,上述TD方向為寬度方向。上述積層膜之上述一端與上述另一端較佳為積層膜之寬度方向之相對向之兩側端部。The laminated film preferably has an MD (Machine Direction, vertical) direction and a TD (Transverse Direction, horizontal) direction. The MD direction is the traveling direction of the laminated film when the laminated film is manufactured, and is, for example, the longitudinal direction. The TD direction is a direction orthogonal to the traveling direction of the laminated film when manufacturing the laminated film, and is a direction orthogonal to the thickness direction of the laminated film. When the laminated film has an MD direction and a TD direction, the TD direction is the width direction. The one end and the other end of the laminated film are preferably opposite side ends of the laminated film in the width direction.

於本發明之積層膜之連結上述一端及上述另一端之方向上,將上述基材膜之尺寸設為W1 mm,將上述絕緣樹脂層之尺寸設為W2 mm。於本發明之積層膜中,通常W1 大於W2 。本發明之積層膜通常滿足W1 >W2In the direction of the laminated film of the present invention connecting the one end and the other end, the size of the base film is set to W 1 mm, and the size of the insulating resin layer is set to W 2 mm. In the laminated film of the present invention, W 1 is usually larger than W 2 . The laminated film of the present invention usually satisfies W 1 >W 2 .

W2 /W1 (絕緣樹脂層之尺寸相對於基材膜之尺寸之比)較佳為0.9以上,更佳為0.92以上,進而較佳為0.94以上,尤佳為0.96以上。W2 /W1 (絕緣樹脂層之尺寸相對於基材膜之尺寸之比)較佳為0.999以下,更佳為0.998以下,進而較佳為0.997以下,尤佳為0.996以下。若W2 /W1 為上述下限以上,則可使用自動剝離裝置於硬化後自絕緣樹脂層良好地剝離基材膜,又,於製造積層膜時,於將積層膜之一端或另一端切開時可抑制絕緣樹脂層之龜裂或破裂。若W2 /W1 為上述上限以下,則可抑制於積層膜之搬送時基材膜自絕緣樹脂層自然剝離,又,由於可高效率地使用基材膜,故可抑制製造成本。W 2 /W 1 (the ratio of the size of the insulating resin layer to the size of the base film) is preferably 0.9 or more, more preferably 0.92 or more, still more preferably 0.94 or more, and particularly preferably 0.96 or more. W 2 /W 1 (the ratio of the size of the insulating resin layer to the size of the base film) is preferably 0.999 or less, more preferably 0.998 or less, further preferably 0.997 or less, and particularly preferably 0.996 or less. If W 2 /W 1 is more than the above lower limit, an automatic peeling device can be used to peel off the base film from the insulating resin layer after curing, and when manufacturing the laminated film, when one end or the other end of the laminated film is cut It can suppress the cracking or cracking of the insulating resin layer. When W 2 /W 1 is equal to or less than the above upper limit, the base film can be suppressed from peeling off from the insulating resin layer naturally during the transport of the laminated film, and the base film can be used efficiently, so that the manufacturing cost can be suppressed.

以下,對構成本發明之積層膜之各層之細節進行說明。Hereinafter, the details of each layer constituting the laminated film of the present invention will be described.

(基材膜) 作為上述基材膜,可列舉:金屬箔、聚對苯二甲酸乙二酯膜及聚對苯二甲酸丁二酯膜等聚酯樹脂膜、聚乙烯膜及聚丙烯膜等烯烴樹脂膜、及聚醯亞胺膜等。上述基材膜之表面亦可視需要進行脫模處理。上述基材膜可為金屬箔,亦可為樹脂膜。上述基材膜較佳為樹脂膜。於使用金屬箔作為上述基材膜之情形時,上述金屬箔較佳為銅箔。(Substrate film) Examples of the base film include metal foils, polyester resin films such as polyethylene terephthalate films and polybutylene terephthalate films, olefin resin films such as polyethylene films and polypropylene films, and Polyimide film, etc. The surface of the above-mentioned base film can also be demolded if necessary. The base film may be a metal foil or a resin film. The base film is preferably a resin film. When a metal foil is used as the base film, the metal foil is preferably a copper foil.

就進一步抑制剝離不良之觀點而言,上述基材膜較佳為經脫模處理。就進一步抑制伴隨聚矽氧之移動之自然剝離之觀點而言,上述脫模處理較佳為聚矽氧非移動性之脫模處理。再者,聚矽氧非移動性之脫模處理意指不含有聚矽氧之脫模處理、或以聚矽氧不會移動至上述絕緣樹脂層側之方式進行處理之脫模處理。From the viewpoint of further suppressing peeling defects, the base film is preferably subjected to release treatment. From the viewpoint of further suppressing the natural peeling accompanying the movement of polysiloxane, the above-mentioned release treatment is preferably a non-mobile release treatment of polysiloxane. Furthermore, the non-mobile silicone mold release treatment means a mold release treatment that does not contain silicone, or a mold release treatment that is performed in such a way that the silicone does not move to the insulating resin layer side.

就使積層膜之操作性良好,又,使絕緣樹脂層之層壓性良好之觀點而言,上述基材膜之厚度較佳為25 μm以上,更佳為30 μm以上,且較佳為75 μm以下,更佳為50 μm以下。就進一步抑制自然剝離之觀點而言,上述基材膜之厚度較佳為75 μm以下,更佳為50 μm以下。就進一步抑制剝離不良之觀點而言,上述基材膜之厚度較佳為25 μm以上。From the viewpoint of improving the handleability of the laminated film and improving the lamination of the insulating resin layer, the thickness of the base film is preferably 25 μm or more, more preferably 30 μm or more, and preferably 75 less than 50 μm, more preferably 50 μm or less. From the viewpoint of further suppressing natural peeling, the thickness of the base film is preferably 75 μm or less, and more preferably 50 μm or less. From the viewpoint of further suppressing peeling defects, the thickness of the base film is preferably 25 μm or more.

上述基材膜之上述絕緣樹脂層側之表面之算術平均粗糙度Ra較佳為5 nm以上,更佳為10 nm以上,且較佳為400 nm以下,更佳為未達400 nm,進而較佳為300 nm以下。若上述算術平均粗糙度為上述下限以上及上述上限以下,則可進一步抑制硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良。The arithmetic mean roughness Ra of the surface of the base film on the side of the insulating resin layer is preferably 5 nm or more, more preferably 10 nm or more, and preferably 400 nm or less, more preferably less than 400 nm, and further It is preferably below 300 nm. If the arithmetic average roughness is above the lower limit and below the upper limit, the natural peeling of the base film from the insulating resin layer during curing can be further suppressed, and further suppressed when the base film is peeled from the insulating resin layer after curing. Poor peeling.

上述算術平均粗糙度Ra係使用非接觸型表面粗糙度計,於VSI(Vertical Scanning Interferometry,垂直掃描干涉)接觸模式下,且藉由50倍透鏡並將測定範圍設為95.6 μm×71.7 μm而測定。The above arithmetic average roughness Ra is measured using a non-contact surface roughness meter in the VSI (Vertical Scanning Interferometry) contact mode, with a 50x lens and the measurement range set to 95.6 μm×71.7 μm .

(絕緣樹脂層) 上述絕緣樹脂層係積層於基材膜之表面上。上述絕緣樹脂層較佳為含有下述環氧化合物、下述無機填充材及下述硬化劑。(Insulating resin layer) The insulating resin layer is laminated on the surface of the base film. The insulating resin layer preferably contains the following epoxy compound, the following inorganic filler, and the following hardener.

[環氧化合物] 上述絕緣樹脂層較佳為含有環氧化合物。作為上述環氧化合物,能夠使用先前公知之環氧化合物。上述環氧化合物係指具有至少1個環氧基之有機化合物。上述環氧化合物可僅使用1種,亦可併用2種以上。[Epoxy compound] The insulating resin layer preferably contains an epoxy compound. As the above-mentioned epoxy compound, previously known epoxy compounds can be used. The above-mentioned epoxy compound refers to an organic compound having at least one epoxy group. Only one kind of the epoxy compound may be used, or two or more kinds may be used in combination.

作為上述環氧化合物,可列舉:雙酚A型環氧化合物、雙酚F型環氧化合物、雙酚S型環氧化合物、酚系酚醛清漆型環氧化合物、聯苯型環氧化合物、聯苯酚醛清漆型環氧化合物、聯苯酚型環氧化合物、萘型環氧化合物、茀型環氧化合物、苯酚芳烷基型環氧化合物、萘酚芳烷基型環氧化合物、二環戊二烯型環氧化合物、蒽型環氧化合物、具有金剛烷骨架之環氧化合物、具有三環癸烷骨架之環氧化合物、伸萘基醚型環氧化合物、及於骨架上具有三𠯤核之環氧化合物等。Examples of the epoxy compound include bisphenol A epoxy compounds, bisphenol F epoxy compounds, bisphenol S epoxy compounds, phenol novolac epoxy compounds, biphenyl epoxy compounds, and Phenolic novolac epoxy compound, biphenol epoxy compound, naphthalene epoxy compound, fusel epoxy compound, phenol aralkyl epoxy compound, naphthol aralkyl epoxy compound, dicyclopentane Ethylene-type epoxy compounds, anthracene-type epoxy compounds, epoxy compounds with adamantane skeleton, epoxy compounds with tricyclodecane skeleton, naphthyl ether-type epoxy compounds, and those with three cores on the skeleton Epoxy compounds, etc.

就進一步提高硬化物與金屬層之接著強度之觀點而言,上述環氧化合物較佳為具有芳香族骨架,更佳為具有聯苯骨架,進而較佳為聯苯型環氧化合物。From the viewpoint of further improving the bonding strength between the hardened product and the metal layer, the epoxy compound preferably has an aromatic skeleton, more preferably has a biphenyl skeleton, and further preferably is a biphenyl epoxy compound.

就進一步提高硬化物與金屬層之接著強度之觀點而言,上述絕緣樹脂層100重量%中,上述環氧化合物之含量較佳為10重量%以上,更佳為20重量%以上,較佳為70重量%以下,更佳為65重量%以下,進而較佳為60重量%以下,尤佳為55重量%以下。From the viewpoint of further improving the bonding strength between the hardened product and the metal layer, the content of the epoxy compound in 100% by weight of the insulating resin layer is preferably 10% by weight or more, more preferably 20% by weight or more, preferably 70% by weight or less, more preferably 65% by weight or less, further preferably 60% by weight or less, particularly preferably 55% by weight or less.

上述環氧化合物之分子量更佳為1000以下。於該情形時,於將絕緣樹脂層層壓至基材膜上之情形時,可使無機填充材均一地存在。The molecular weight of the epoxy compound is more preferably 1,000 or less. In this case, when the insulating resin layer is laminated on the base film, the inorganic filler can be uniformly present.

關於環氧化合物之分子量及下述硬化劑之分子量,於環氧化合物或硬化劑並非聚合物之情形時、及可特定出環氧化合物或硬化劑之結構式之情形時,意指可自該結構式算出之分子量。又,於環氧化合物或硬化劑為聚合物之情形時,意指重量平均分子量。With regard to the molecular weight of the epoxy compound and the molecular weight of the following hardener, when the epoxy compound or hardener is not a polymer, and when the structural formula of the epoxy compound or hardener can be specified, it means that The molecular weight calculated by the structural formula. In addition, when the epoxy compound or the hardener is a polymer, it means the weight average molecular weight.

[無機填充材] 上述絕緣樹脂層較佳為含有無機填充材。藉由使用無機填充材,硬化物之由熱所致之尺寸變化變小。進而,硬化物之表面之表面粗糙度進一步變小,硬化物與金屬層之接著強度變高。[Inorganic filler] The insulating resin layer preferably contains an inorganic filler. By using an inorganic filler, the dimensional change of the hardened product due to heat becomes small. Furthermore, the surface roughness of the surface of the hardened product is further reduced, and the bonding strength between the hardened product and the metal layer is increased.

於先前之積層膜中,若絕緣樹脂層包含無機填充材,則有時於硬化時基材膜自絕緣樹脂層自然剝離,進而於硬化後將基材膜自絕緣樹脂層剝離時,無法將基材膜與絕緣樹脂層良好地剝離,基材膜容易破裂。然而,於本發明之積層膜中,即便於絕緣樹脂層包含無機填充材之情形時,亦可進一步抑制硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後將基材膜自絕緣樹脂層剝離時基材膜之剝離不良。In the previous laminate film, if the insulating resin layer contains an inorganic filler, the base film may naturally peel off from the insulating resin layer during curing, and then the base film may not be peeled from the insulating resin layer after curing. The material film and the insulating resin layer peel well, and the base material film is easily broken. However, in the laminated film of the present invention, even in the case where the insulating resin layer contains an inorganic filler, the natural peeling of the base film from the insulating resin layer during curing can be further suppressed, and the base film can be further suppressed from Defective peeling of the base film when the insulating resin layer is peeled off.

作為上述無機填充材,可列舉:二氧化矽、滑石、黏土、雲母、水滑石、氧化鋁、氧化鎂、氫氧化鋁、氮化鋁及氮化硼等。Examples of the inorganic filler include silicon dioxide, talc, clay, mica, hydrotalcite, alumina, magnesium oxide, aluminum hydroxide, aluminum nitride, and boron nitride.

就減小硬化物之表面之表面粗糙度,進一步提高硬化物與金屬層之接著強度,且於硬化物之表面形成進一步微細之配線,且向硬化物賦予更良好之絕緣可靠性之觀點而言,上述無機填充材較佳為二氧化矽或氧化鋁,更佳為二氧化矽,進而較佳為熔融二氧化矽。藉由使用二氧化矽,硬化物之熱膨脹率進一步變低,且硬化物之表面之表面粗糙度有效地變小,硬化物與金屬層之接著強度有效地變高。二氧化矽之形狀較佳為球狀。From the viewpoint of reducing the surface roughness of the surface of the hardened product, further improving the bonding strength of the hardened product and the metal layer, and forming further fine wiring on the surface of the hardened product, and giving the hardened product better insulation reliability The above-mentioned inorganic filler is preferably silica or alumina, more preferably silica, and further preferably fused silica. By using silicon dioxide, the thermal expansion rate of the hardened product is further lowered, and the surface roughness of the surface of the hardened product is effectively reduced, and the bonding strength between the hardened product and the metal layer is effectively increased. The shape of silicon dioxide is preferably spherical.

就不依靠硬化環境而使樹脂之硬化進行,有效地提高硬化物之玻璃轉移溫度,有效地減小硬化物之熱線膨脹係數之觀點而言,上述無機填充材較佳為球狀二氧化矽。From the viewpoints that the curing of the resin does not depend on the curing environment, the glass transition temperature of the cured product is effectively increased, and the thermal linear expansion coefficient of the cured product is effectively reduced, the inorganic filler is preferably spherical silica.

上述無機填充材之平均粒徑較佳為10 nm以上,更佳為50 nm以上,進而較佳為100 nm以上,且較佳為5 μm以下,更佳為3 μm以下,進而較佳為1 μm以下,尤佳為0.5 μm以下。若上述無機填充材之平均粒徑為上述下限以上及上述上限以下,則硬化物與金屬層之接著強度進一步變高。The average particle diameter of the inorganic filler is preferably 10 nm or more, more preferably 50 nm or more, further preferably 100 nm or more, and preferably 5 μm or less, more preferably 3 μm or less, and still more preferably 1 Below μm, particularly preferably below 0.5 μm. If the average particle diameter of the inorganic filler is not less than the lower limit and not more than the upper limit, the strength of adhesion between the cured product and the metal layer further increases.

作為上述無機填充材之平均粒徑,採用成為50%之中值徑(d50)之值。上述平均粒徑能夠使用雷射繞射散射方式之粒度分佈測定裝置進行測定。於上述絕緣樹脂層包含2種以上之無機填充材之情形時,上述無機填充材之平均粒徑係以上述絕緣樹脂層所包含之無機填充材整體來進行測定。亦可使用為了獲得上述絕緣樹脂層所使用之樹脂組合物或無機填充材而測定無機填充材之平均粒徑。As the average particle diameter of the inorganic filler, a value of 50% of the median diameter (d50) is adopted. The above average particle diameter can be measured using a laser diffraction scattering particle size distribution measuring device. When the insulating resin layer contains two or more types of inorganic fillers, the average particle diameter of the inorganic filler is measured on the entire inorganic filler contained in the insulating resin layer. The average particle diameter of the inorganic filler can also be measured using the resin composition or inorganic filler used to obtain the insulating resin layer.

上述無機填充材較佳為球狀,更佳為球狀二氧化矽。於該情形時,硬化物之表面之表面粗糙度有效地變小,進而硬化物與金屬層之接著強度有效地變高。於上述無機填充材為球狀之情形時,上述無機填充材之縱橫比較佳為2以下,更佳為1.5以下。The inorganic filler is preferably spherical, and more preferably spherical silica. In this case, the surface roughness of the surface of the hardened product is effectively reduced, and the bonding strength between the hardened product and the metal layer is effectively increased. In the case where the inorganic filler is spherical, the aspect ratio of the inorganic filler is preferably 2 or less, and more preferably 1.5 or less.

上述無機填充材較佳為經表面處理,更佳為基於偶合劑之表面處理物,進而較佳為基於矽烷偶合劑之表面處理物。藉此,粗化硬化物之表面之表面粗糙度進一步變小,硬化物與金屬層之接著強度進一步變高,且可於硬化物之表面形成進一步微細之配線,且向硬化物賦予進一步良好之配線間絕緣可靠性及層間絕緣可靠性。The inorganic filler is preferably surface-treated, more preferably a surface-treated product based on a coupling agent, and further preferably a surface-treated product based on a silane coupling agent. As a result, the surface roughness of the surface of the roughened and hardened material is further reduced, the bonding strength of the hardened material and the metal layer is further increased, and further fine wiring can be formed on the surface of the hardened material, and further good Wiring room insulation reliability and interlayer insulation reliability.

作為上述偶合劑,可列舉:矽烷偶合劑、鈦偶合劑及鋁偶合劑等。作為上述矽烷偶合劑,可列舉:甲基丙烯酸矽烷、丙烯酸矽烷、胺基矽烷、咪唑矽烷、乙烯基矽烷及環氧矽烷等。Examples of the coupling agent include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Examples of the silane coupling agent include methacrylic silane, acrylic silane, amino silane, imidazole silane, vinyl silane, and epoxy silane.

上述絕緣樹脂層100重量%中,上述無機填充材之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為50重量%以上,尤佳為60重量%以上,最佳為70重量%以上。上述絕緣樹脂層100重量%中,上述無機填充材之含量較佳為90重量%以下,更佳為85重量%以下,進而較佳為83重量%以下,尤佳為80重量%以下。若上述無機填充材之含量於上述下限以上及上述上限以下,則硬化物之表面之表面粗糙度進一步變小,硬化物與金屬層之接著強度進一步變高,且於硬化物之表面形成進一步微細之配線。進而,若為該無機填充材之含量,則於降低硬化物之熱膨脹率之同時,亦能夠使膠渣去除性變良好。若上述無機填充材之含量為上述下限以上,則介電損耗正切有效地變低。若上述無機填充材之含量為上述上限以下,則可進一步有效地抑制剝離保護膜時之絕緣樹脂層之破裂。The content of the inorganic filler in 100% by weight of the insulating resin layer is preferably 30% by weight or more, more preferably 40% by weight or more, and still more preferably 50% by weight or more, particularly preferably 60% by weight or more, most preferably 70% by weight or more. In 100% by weight of the insulating resin layer, the content of the inorganic filler is preferably 90% by weight or less, more preferably 85% by weight or less, further preferably 83% by weight or less, and particularly preferably 80% by weight or less. If the content of the inorganic filler is above the above lower limit and below the above upper limit, the surface roughness of the surface of the cured product further becomes smaller, the bonding strength of the cured product and the metal layer further becomes higher, and further fineness is formed on the surface of the cured product Of wiring. Furthermore, if the content of the inorganic filler is reduced, the thermal expansion rate of the cured product can be reduced, and the slag removability can be improved. If the content of the inorganic filler is above the lower limit, the dielectric loss tangent is effectively reduced. If the content of the inorganic filler is below the upper limit, the cracking of the insulating resin layer when the protective film is peeled off can be further effectively suppressed.

[硬化劑] 上述絕緣樹脂層較佳為包含硬化劑。上述硬化劑並無特別限定。作為上述硬化劑,能夠使用先前公知之硬化劑。上述硬化劑可僅使用1種,亦可併用2種以上。[hardener] The insulating resin layer preferably contains a hardener. The hardener is not particularly limited. As the above-mentioned hardener, a conventionally known hardener can be used. Only one kind of the above hardener may be used, or two or more kinds may be used in combination.

作為上述硬化劑,可列舉:氰酸酯化合物(氰酸酯硬化劑)、酚化合物(酚系硬化劑)、胺化合物(胺硬化劑)、硫醇化合物(硫醇硬化劑)、咪唑化合物、膦化合物、酸酐、雙氰胺、碳二醯亞胺化合物(碳二醯亞胺硬化劑)、順丁烯二醯亞胺化合物(順丁烯二醯亞胺硬化劑)、及活性酯化合物等。上述硬化劑較佳為具有能夠與上述環氧化合物之環氧基反應之官能基。Examples of the hardener include cyanate compounds (cyanate hardeners), phenol compounds (phenolic hardeners), amine compounds (amine hardeners), thiol compounds (thiol hardeners), imidazole compounds, Phosphine compounds, acid anhydrides, dicyandiamide, carbodiimide compounds (carbodiimide hardeners), maleimide diimide compounds (maleimide diimide hardeners), active ester compounds, etc. . The hardener preferably has a functional group capable of reacting with the epoxy group of the epoxy compound.

就進一步降低介電損耗正切之觀點而言,上述硬化劑較佳為含有氰酸酯化合物、酚化合物、順丁烯二醯亞胺化合物、活性酯化合物或碳二醯亞胺化合物。就進一步抑制硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後將基材膜自絕緣樹脂層剝離時基材膜之剝離不良之觀點而言,上述硬化劑較佳為含有酚化合物、氰酸酯化合物、順丁烯二醯亞胺化合物或活性酯化合物。上述硬化劑亦可含有酚化合物、氰酸酯化合物或活性酯化合物。From the viewpoint of further reducing the dielectric loss tangent, the hardener preferably contains a cyanate compound, a phenol compound, a maleimide compound, an active ester compound, or a carbodiimide compound. From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing, and further suppressing the peeling failure of the base film when the base film is peeled from the insulating resin layer after curing, the above curing agent preferably contains phenol Compounds, cyanate compounds, maleimide compounds or active ester compounds. The above-mentioned hardener may also contain a phenol compound, a cyanate ester compound or an active ester compound.

上述氰酸酯化合物可為氰酸酯化合物(氰酸酯硬化劑)。作為上述氰酸酯化合物,可列舉:酚醛清漆型氰酸酯樹脂、雙酚型氰酸酯樹脂、以及其等一部分經三聚化而成之預聚物等。作為上述酚醛清漆型氰酸酯樹脂,可列舉酚系酚醛清漆型氰酸酯樹脂及烷酚型氰酸酯樹脂等。作為上述雙酚型氰酸酯樹脂,可列舉:雙酚A型氰酸酯樹脂、雙酚E型氰酸酯樹脂及四甲基雙酚F型氰酸酯樹脂等。The cyanate compound may be a cyanate compound (cyanate hardener). Examples of the cyanate compound include novolak type cyanate resin, bisphenol type cyanate resin, and prepolymers obtained by trimerization of a part of these. Examples of the novolak-type cyanate resins include phenol-based novolak-type cyanate resins and alkylphenol-type cyanate resins. Examples of the bisphenol cyanate resin include bisphenol A cyanate resin, bisphenol E cyanate resin, and tetramethyl bisphenol F cyanate resin.

作為上述氰酸酯化合物之市售品,可列舉:酚系酚醛清漆型氰酸酯樹脂(Lonza Japan公司製造之「PT-30」及「PT-60」)及雙酚型氰酸酯樹脂經三聚化而成之預聚物(Lonza Japan公司製造之「BA-230S」、「BA-3000S」、「BTP-1000S」及「BTP-6020S」)等。Examples of commercially available products of the cyanate compounds include phenolic novolak type cyanate resins ("PT-30" and "PT-60" manufactured by Lonza Japan) and bisphenol type cyanate resins. Prepolymers ("BA-230S", "BA-3000S", "BTP-1000S" and "BTP-6020S" manufactured by Lonza Japan, etc.), etc.

作為上述酚化合物,可列舉:酚醛清漆型酚、聯苯酚型酚、萘型酚、二環戊二烯型酚、芳烷基型酚及二環戊二烯型酚等。Examples of the phenol compounds include novolac phenol, biphenol phenol, naphthalene phenol, dicyclopentadiene phenol, aralkyl phenol, and dicyclopentadiene phenol.

作為上述酚化合物之市售品,可列舉:酚醛清漆型酚(DIC公司製造之「TD-2091」)、聯苯酚醛清漆型酚(明和化成公司製造之「MEH-7851」)、芳烷基型酚化合物(明和化成公司製造之「MEH-7800」)、以及具有胺基三𠯤骨架之酚(DIC公司製造之「LA1356」及「LA3018-50P」)等。Examples of commercially available products of the above phenol compounds include novolac type phenol ("TD-2091" manufactured by DIC Corporation), biphenol novolac type phenol ("MEH-7851" manufactured by Minghe Chemical Industry Co., Ltd.), and aralkyl groups Type phenol compounds ("MEH-7800" manufactured by Meiwa Chemical Industry Co., Ltd.) and phenols with an amine tri-framework ("LA1356" and "LA3018-50P" manufactured by DIC), etc.

活性酯化合物係指於結構體中含有至少1個酯鍵,且於酯鍵之兩側鍵結有芳香族環之化合物。活性酯化合物例如藉由羧酸化合物或硫羧酸化合物與羥基化合物或硫醇化合物之縮合反應所獲得。作為活性酯化合物之例,可列舉下述式(1)所表示之化合物。The active ester compound refers to a compound containing at least one ester bond in the structure, and an aromatic ring bonded to both sides of the ester bond. The active ester compound is obtained, for example, by a condensation reaction of a carboxylic acid compound or a thiocarboxylic acid compound with a hydroxyl compound or a thiol compound. Examples of the active ester compound include compounds represented by the following formula (1).

[化1]

Figure 02_image001
[Chemical 1]
Figure 02_image001

上述式(1)中,X1及X2分別表示含有芳香族環之基。作為上述含有芳香族環之基之較佳例,可列舉:可具有取代基之苯環、及可具有取代基之萘環等。作為上述取代基,可列舉烴基。該烴基之碳數較佳為12以下,更佳為6以下,進而較佳為4以下。In the above formula (1), X1 and X2 each represent a group containing an aromatic ring. Preferred examples of the aromatic ring-containing group include a benzene ring which may have a substituent, a naphthalene ring which may have a substituent, and the like. Examples of the substituents include hydrocarbon groups. The carbon number of the hydrocarbon group is preferably 12 or less, more preferably 6 or less, and still more preferably 4 or less.

作為X1及X2之組合,可列舉:可具有取代基之苯環與可具有取代基之苯環之組合、可具有取代基之苯環與可具有取代基之萘環之組合。進而作為X1及X2之組合,可列舉可具有取代基之萘環與可具有取代基之萘環之組合。Examples of the combination of X1 and X2 include a combination of a benzene ring that may have a substituent and a benzene ring that may have a substituent, and a combination of a benzene ring that may have a substituent and a naphthalene ring that may have a substituent. Furthermore, as a combination of X1 and X2, the combination of the naphthalene ring which may have a substituent and the naphthalene ring which may have a substituent is mentioned.

上述活性酯化合物無特別限定。作為上述活性酯化合物之市售品,可列舉:DIC公司製造之「HPC-8000-65T」、「EXB9416-70BK」、「EXB8100-65T」及「EXB-8000L-65MT」等。The active ester compound is not particularly limited. Examples of commercially available products of the active ester compounds include "HPC-8000-65T", "EXB9416-70BK", "EXB8100-65T", and "EXB-8000L-65MT" manufactured by DIC Corporation.

上述碳二醯亞胺化合物具有下述式(2)所表示之結構單元。於下述式(2)中,右端部及左端部係與其他基之鍵結部位。The carbodiimide compound has a structural unit represented by the following formula (2). In the following formula (2), the right end portion and the left end portion are bonded to other bases.

[化2]

Figure 02_image003
[Chem 2]
Figure 02_image003

上述式(2)中,X表示伸烷基、於伸烷基上鍵結有取代基之基、伸環烷基、於伸環烷基上鍵結有取代基之基、伸芳基、或於伸芳基上鍵結有取代基之基,p表示1~5之整數。於存在複數個X之情形時,複數個X可相同,亦可不同。In the above formula (2), X represents an alkylene group, a group bonded with a substituent on the alkylene group, a cycloalkyl group, a group bonded with a substituent on the cycloalkyl group, an aryl group, or A group having a substituent bonded to the arylene group, p represents an integer of 1 to 5. When there are multiple Xs, the multiple Xs may be the same or different.

於較佳之一個形態中,至少1個X為伸烷基、於伸烷基上鍵結有取代基之基、伸環烷基、或於伸環烷基上鍵結有取代基之基。In a preferred form, at least one X is an alkylene group, a group bonded with a substituent on the alkylene group, a cycloalkyl group, or a group bonded with a substituent on the cycloalkyl group.

作為上述碳二醯亞胺化合物之市售品,可列舉:Nisshinbo Chemical公司製造之「Carbodilite V-02B」、「Carbodilite V-03」、「Carbodilite V-04K」、「Carbodilite V-07」、「Carbodilite V-09」、「Carbodilite 10M-SP」及「Carbodilite 10M-SP(改)」,以及Rhein Chemie公司製造之「Stabaxol P」、「Stabaxol P400」及「Hykasil 510」等。Examples of commercially available products of the above carbodiimide compounds include "Carbodilite V-02B", "Carbodilite V-03", "Carbodilite V-04K", "Carbodilite V-07", and "Carbodilite V-07" manufactured by Nisshinbo Chemical Company. "Carbodilite V-09", "Carbodilite 10M-SP" and "Carbodilite 10M-SP (revised)", and "Stabaxol P", "Stabaxol P400" and "Hykasil 510" manufactured by Rhein Chemie.

作為上述順丁烯二醯亞胺化合物,可使用先前公知之順丁烯二醯亞胺化合物。上述順丁烯二醯亞胺化合物可僅使用1種,亦可併用2種以上。As the above-mentioned maleimide diimide compound, a previously known maleimide diimide compound can be used. As for the maleimide compound, only one type may be used, or two or more types may be used in combination.

上述順丁烯二醯亞胺化合物可為雙順丁烯二醯亞胺化合物。The maleimide diimide compound may be a bismaleimide diimide compound.

作為上述順丁烯二醯亞胺化合物,可列舉N-苯基順丁烯二醯亞胺及N-烷基雙順丁烯二醯亞胺等。Examples of the maleimide diimide compound include N-phenyl maleimide diimide, N-alkylbismaleimide diimide, and the like.

上述順丁烯二醯亞胺化合物較佳為具有來自除二聚物二胺以外之二胺化合物或除三聚物三胺以外之三胺化合物之骨架。The maleimide diimide compound preferably has a skeleton derived from a diamine compound other than dimer diamine or a triamine compound other than trimer triamine.

上述順丁烯二醯亞胺化合物可具有芳香族環,亦可不具有芳香族環。上述順丁烯二醯亞胺化合物較佳為具有芳香族環。The maleimide compound may have an aromatic ring or may not have an aromatic ring. The maleimide compound preferably has an aromatic ring.

於上述順丁烯二醯亞胺化合物中,較佳為於順丁烯二醯亞胺骨架上鍵結有氮原子與芳香族環。In the maleimide diimide compound, it is preferable that a nitrogen atom and an aromatic ring are bonded to the maleimide diimide skeleton.

就進一步提高硬化物之熱尺寸穩定性之觀點而言,上述絕緣樹脂層中之除溶劑以外之成分100重量%中,上述順丁烯二醯亞胺化合物之含量較佳為0.5重量%以上,更佳為1重量%以上,且較佳為15重量%以下,更佳為10重量%以下。From the viewpoint of further improving the thermal dimensional stability of the cured product, the content of the maleimide compound is preferably 0.5% by weight or more in 100% by weight of components other than the solvent in the insulating resin layer, It is more preferably 1% by weight or more, and preferably 15% by weight or less, and more preferably 10% by weight or less.

上述絕緣樹脂層中之除無機填充材及溶劑以外之成分100重量%中,上述順丁烯二醯亞胺化合物之含量較佳為2.5重量%以上,更佳為5重量%以上,進而較佳為7.5重量%以上,且較佳為50重量%以下,更佳為35重量%以下。若上述順丁烯二醯亞胺化合物之含量於上述下限以上及上述上限以下,則可進一步提高硬化物之熱尺寸穩定性。The content of the maleimide compound in 100% by weight of the insulating resin layer except for the inorganic filler and the solvent is preferably 2.5% by weight or more, more preferably 5% by weight or more, and more preferably It is 7.5% by weight or more, and preferably 50% by weight or less, and more preferably 35% by weight or less. If the content of the maleimide compound is above the lower limit and below the upper limit, the thermal dimensional stability of the cured product can be further improved.

就有效地發揮本發明之效果之觀點而言,上述順丁烯二醯亞胺化合物之分子量較佳為500以上,更佳為1000以上,較且佳為未達30000,更佳為未達20000。From the viewpoint of effectively exerting the effects of the present invention, the molecular weight of the maleimide compound is preferably 500 or more, more preferably 1000 or more, and more preferably less than 30,000, more preferably less than 20,000 .

關於上述順丁烯二醯亞胺化合物之分子量,於上述順丁烯二醯亞胺化合物並非聚合物之情形、及可特定出上述順丁烯二醯亞胺化合物之結構式之情形時,意指可自該結構式算出之分子量。又,上述順丁烯二醯亞胺化合物之分子量於上述順丁烯二醯亞胺化合物為聚合物之情形時,表示藉由凝膠滲透層析法(GPC)所測得之以聚苯乙烯換算計之重量平均分子量。Regarding the molecular weight of the maleimide diimide compound, when the maleimide diimide compound is not a polymer and the structural formula of the maleimide diimide compound can be specified, it means Refers to the molecular weight that can be calculated from the structural formula. In addition, when the molecular weight of the maleimide diimide compound is a polymer when the maleimide diimide compound is a polymer, it means that polystyrene is measured by gel permeation chromatography (GPC) Weight-average molecular weight in terms of conversion.

作為上述順丁烯二醯亞胺化合物之市售品,例如可列舉:大和化成工業公司製造之「BMI-4000」及「BMI-5100」、以及Designer Molecules Inc.公司製造之「BMI-3000」等。Examples of the commercially available products of the maleimide diimide compound include "BMI-4000" and "BMI-5100" manufactured by Daiwa Chemical Industry Co., Ltd., and "BMI-3000" manufactured by Designer Molecules Inc. Wait.

上述硬化劑之分子量較佳為1000以下。於該情形時,於將絕緣樹脂層層壓至基材膜上之情形時,可使無機填充材均勻地存在。The molecular weight of the hardener is preferably 1,000 or less. In this case, when the insulating resin layer is laminated on the base film, the inorganic filler can be uniformly present.

上述絕緣樹脂層中之除上述無機填充材以外之成分100重量%中,上述環氧化合物與上述硬化劑之合計含量較佳為75重量%以上,更佳為80重量%以上,且較佳為99重量%以下,更佳為97重量%以下。若上述環氧化合物與上述硬化劑之合計含量為上述下限以上及上述上限以下,則可獲得進一步良好之硬化物,且由於可調整熔融黏度,故而無機填充材之分散性變良好。進而可於硬化過程中防止絕緣樹脂層潤濕擴散至非意欲之區域。進而,可進一步抑制硬化物之由熱所致之尺寸變化。又,若上述環氧化合物與上述硬化劑之合計含量為上述下限以上,則有熔融黏度不會變得過低,而於硬化過程中絕緣膜變得難以過度潤濕擴散至非意欲之區域之傾向。又,若上述環氧化合物與上述硬化劑之合計含量為上述上限以下,則有對於電路基板之孔或凹凸之嵌入變得容易,進而無機填充材難以不均一地存在之傾向。In 100% by weight of the components other than the inorganic filler in the insulating resin layer, the total content of the epoxy compound and the hardener is preferably 75% by weight or more, more preferably 80% by weight or more, and is preferably 99% by weight or less, more preferably 97% by weight or less. If the total content of the epoxy compound and the hardener is above the lower limit and below the upper limit, a further good cured product can be obtained, and since the melt viscosity can be adjusted, the dispersibility of the inorganic filler becomes good. Furthermore, the insulating resin layer can be prevented from wetting and spreading to unintended areas during the hardening process. Furthermore, the dimensional change of the hardened product due to heat can be further suppressed. In addition, if the total content of the epoxy compound and the hardener is more than the lower limit, the melt viscosity will not become too low, and the insulating film becomes difficult to overwet and diffuse to the unintended area during the hardening process tendency. In addition, if the total content of the epoxy compound and the hardener is equal to or less than the upper limit, it is easy to embed holes or irregularities in the circuit board, and the inorganic filler tends to be unevenly present.

上述絕緣樹脂層中之除上述無機填充材以外之成分100重量%中,上述硬化劑之含量較佳為30重量%以上,更佳為40重量%以上,且較佳為70重量%以下,更佳為60重量%以下。若上述硬化劑之含量為上述下限以上及上述上限以下,則獲得進一步良好之硬化物,介電損耗正切有效地變低。The content of the hardener is preferably 30% by weight or more, more preferably 40% by weight or more, and preferably 70% by weight or less in 100% by weight of the components other than the inorganic filler in the insulating resin layer It is preferably 60% by weight or less. If the content of the hardener is above the lower limit and below the upper limit, a further good hardened product is obtained, and the dielectric loss tangent is effectively reduced.

[熱塑性樹脂] 上述絕緣樹脂層較佳為包含熱塑性樹脂。作為上述熱塑性樹脂,可列舉:聚醯亞胺樹脂、聚乙烯醇縮醛樹脂及苯氧基樹脂等。上述熱塑性樹脂可僅使用1種,亦可併用2種以上。[Thermoplastic resin] The insulating resin layer preferably contains a thermoplastic resin. Examples of the thermoplastic resin include polyimide resin, polyvinyl acetal resin, and phenoxy resin. Only one type of the thermoplastic resin may be used, or two or more types may be used in combination.

就不依靠硬化環境而有效地降低介電損耗正切,且有效地提高金屬配線之密接性之觀點而言,上述熱塑性樹脂較佳為苯氧基樹脂。藉由使用苯氧基樹脂,可抑制絕緣樹脂層對於電路基板之孔或凹凸之嵌入性之變差及無機填充材之不均一化。又,藉由使用苯氧基樹脂,能夠調整熔融黏度,因此無機填充材之分散性變的良好,且於硬化過程中絕緣樹脂層變得難以潤濕擴散至非意欲之區域。上述苯氧基樹脂並無特別限定。作為上述苯氧基樹脂,能夠使用先前公知之苯氧基樹脂。上述苯氧基樹脂可僅使用1種,亦可併用2種以上。In terms of effectively reducing the dielectric loss tangent without relying on a hardening environment and effectively improving the adhesion of metal wiring, the thermoplastic resin is preferably a phenoxy resin. By using a phenoxy resin, it is possible to suppress the deterioration of the embedding property of the insulating resin layer with respect to the holes or irregularities of the circuit board and the unevenness of the inorganic filler. Moreover, by using a phenoxy resin, the melt viscosity can be adjusted, so the dispersibility of the inorganic filler becomes good, and it becomes difficult for the insulating resin layer to wet and diffuse to unintended areas during the curing process. The phenoxy resin is not particularly limited. As the above-mentioned phenoxy resin, a conventionally known phenoxy resin can be used. Only one type of the phenoxy resin may be used, or two or more types may be used in combination.

作為上述苯氧基樹脂,例如可列舉:具有雙酚A型骨架、雙酚F型之骨架、雙酚S型骨架、聯苯骨架、酚醛清漆骨架、萘骨架及醯亞胺骨架等骨架之苯氧基樹脂等。Examples of the phenoxy resin include benzene having a bisphenol A skeleton, a bisphenol F skeleton, a bisphenol S skeleton, a biphenyl skeleton, a novolac skeleton, a naphthalene skeleton, and an imide skeleton. Oxygen resin, etc.

作為上述苯氧基樹脂之市售品,例如可列舉:新日鐵住金化學公司製造之「YP50」、「YP55」及「YP70」;以及三菱化學公司製造之「1256B40」、「4250」、「4256H40」、「4275」、「YX6954BH30」及「YX8100BH30」等。Examples of the commercially available products of the phenoxy resin include: "YP50", "YP55", and "YP70" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.; and "1256B40", "4250", and "" manufactured by Mitsubishi Chemical Corporation. "4256H40", "4275", "YX6954BH30" and "YX8100BH30" etc.

就獲得保存穩定性進一步優異之絕緣樹脂層之觀點而言,上述熱塑性樹脂之重量平均分子量較佳為5000以上,更佳為10000以上,較佳為100000以下,更佳為50000以下。From the viewpoint of obtaining an insulating resin layer having further excellent storage stability, the weight average molecular weight of the thermoplastic resin is preferably 5,000 or more, more preferably 10,000 or more, preferably 100,000 or less, and more preferably 50,000 or less.

上述熱塑性樹脂之上述重量平均分子量係表示藉由凝膠滲透層析法(GPC)所測得之以聚苯乙烯換算計之重量平均分子量。The above-mentioned weight average molecular weight of the above thermoplastic resin means the weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).

上述熱塑性樹脂及上述苯氧基樹脂之含量並無特別限定。絕緣樹脂層中之除上述無機填充材以外之成分100重量%中,上述熱塑性樹脂之含量(於上述熱塑性樹脂為苯氧基樹脂之情形時為苯氧基樹脂之含量)較佳為1重量%以上,更佳為5重量%以上,且較佳為30重量%以下,更佳為15重量%以下。若上述熱塑性樹脂之含量為上述下限以上及上述上限以下,則絕緣樹脂層對於電路基板之孔或凹凸之嵌入性變得良好。若上述熱塑性樹脂之含量為上述下限以上,則絕緣樹脂層之形成進一步變容易,而可獲得進一步良好之絕緣層。若上述熱塑性樹脂之含量為上述上限以下,則硬化物之熱膨脹率進一步變低。硬化物之表面之表面粗糙度進一步變小,硬化物與金屬層之接著強度進一步變高。The content of the thermoplastic resin and the phenoxy resin is not particularly limited. In the insulating resin layer, the content of the thermoplastic resin (the content of the phenoxy resin when the thermoplastic resin is a phenoxy resin) is preferably 1% by weight in 100% by weight of the components other than the inorganic filler. The above is more preferably 5% by weight or more, and is preferably 30% by weight or less, and more preferably 15% by weight or less. If the content of the thermoplastic resin is not less than the lower limit and not more than the upper limit, the embedding property of the insulating resin layer into the holes or irregularities of the circuit board becomes good. If the content of the thermoplastic resin is more than the above lower limit, the formation of the insulating resin layer is further facilitated, and a further good insulating layer can be obtained. If the content of the thermoplastic resin is equal to or lower than the upper limit, the thermal expansion coefficient of the cured product will further decrease. The surface roughness of the surface of the hardened product is further reduced, and the subsequent strength of the hardened product and the metal layer is further increased.

[硬化促進劑] 上述絕緣樹脂層較佳為包含硬化促進劑。藉由使用上述硬化促進劑,硬化速度進一步變快。藉由使絕緣樹脂層迅速地硬化,硬化物中之交聯結構變得均一,並且未反應之官能基數減少,結果導致交聯密度變高。上述硬化促進劑並無特別限定,能夠使用先前公知之硬化促進劑。上述硬化促進劑可僅使用1種,亦可併用2種以上。[Hardening accelerator] The insulating resin layer preferably contains a hardening accelerator. By using the above hardening accelerator, the hardening speed is further increased. By rapidly curing the insulating resin layer, the cross-linked structure in the cured product becomes uniform, and the number of unreacted functional groups decreases, resulting in a high cross-link density. The above curing accelerator is not particularly limited, and a conventionally known curing accelerator can be used. Only one kind of the above curing accelerator may be used, or two or more kinds may be used in combination.

作為上述硬化促進劑,例如可列舉:咪唑化合物、磷化合物、胺化合物及有機金屬化合物等。Examples of the hardening accelerator include imidazole compounds, phosphorus compounds, amine compounds, and organometallic compounds.

作為上述咪唑化合物,可列舉:2-十一烷基咪唑、2-十七烷基咪唑、2-甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1,2-二甲基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑鎓偏苯三酸鹽、1-氰乙基-2-苯基咪唑鎓偏苯三酸鹽、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基均三𠯤、2,4-二胺基-6-[2'-十一烷基咪唑基-(1')]-乙基均三𠯤、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基均三𠯤、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基均三𠯤異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-甲基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥甲基咪唑及2-苯基-4-甲基-5-二羥甲基咪唑等。Examples of the imidazole compounds include 2-undecylimidazole, 2-heptadecylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-benzene 4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl-2-methylimidazole , 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl- 2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl -(1')]-ethylmestris, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethylmestris, 2,4- Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethylmestris, 2,4-diamino-6-[2'-methylimidazole基-(1')]-ethyl homotricyanate adduct, 2-phenylimidazole isocyanurate adduct, 2-methylimidazole isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-dihydroxymethylimidazole, etc.

作為上述磷化合物,可列舉三苯基膦等。Examples of the phosphorus compound include triphenylphosphine.

作為上述胺化合物,可列舉:二乙基胺、三乙基胺、二伸乙基四胺、三伸乙基四胺及4,4-二甲胺基吡啶等。Examples of the above-mentioned amine compounds include diethylamine, triethylamine, diethylidenetetraamine, triethylideneamine, 4,4-dimethylaminopyridine, and the like.

作為上述有機金屬化合物,可列舉:環烷酸鋅、環烷酸鈷、辛酸錫、辛酸鈷、雙乙醯丙酮鈷(Ⅱ)及三乙醯丙酮鈷(Ⅲ)等。Examples of the above-mentioned organometallic compounds include zinc naphthenate, cobalt naphthenate, tin octoate, cobalt octoate, cobalt (II) diacetone acetone, and cobalt (III) triacetone acetone.

上述硬化促進劑之含量並無特別限定。絕緣樹脂層中之除上述無機填充材以外之成分100重量%中,上述硬化促進劑之含量較佳為0.005重量%以上,更佳為0.01重量%以上,且較佳為5重量%以下,更佳為3重量%以下。若上述硬化促進劑之含量為上述下限以上及上述上限以下,則絕緣樹脂層有效率地硬化。若上述硬化促進劑之含量為更佳之範圍內,則絕緣樹脂層之保存穩定性進一步變高,且可獲得進一步良好之硬化物。The content of the hardening accelerator is not particularly limited. In the insulating resin layer, the content of the above-mentioned hardening accelerator is preferably 0.005 wt% or more, more preferably 0.01 wt% or more, and preferably 5 wt% or less, in 100 wt% of the components other than the inorganic filler in the insulating resin layer It is preferably 3% by weight or less. If the content of the curing accelerator is more than the lower limit and less than the upper limit, the insulating resin layer is cured efficiently. If the content of the above-mentioned hardening accelerator is in a more preferable range, the storage stability of the insulating resin layer further becomes higher, and a further good hardened product can be obtained.

[溶劑] 上述絕緣樹脂層不包含或包含溶劑。又,上述溶劑亦可為了獲得包含上述無機填充材之漿料而使用。上述溶劑可僅使用1種,亦可併用2種以上。[Solvent] The insulating resin layer does not contain or contains a solvent. Moreover, the said solvent can also be used for obtaining the slurry containing the said inorganic filler. Only one type of the above solvents may be used, or two or more types may be used in combination.

作為上述溶劑,可列舉:丙酮、甲醇、乙醇、丁醇、2-丙醇、2-甲氧基乙醇、2-乙氧基乙醇、1-甲氧基-2-丙醇、2-乙醯氧基-1-甲氧基丙烷、甲苯、二甲苯、甲基乙基酮、N,N-二甲基甲醯胺、甲基異丁基酮、N-甲基-吡咯啶酮、正己烷、環己烷、環己酮及作為混合物之石腦油等。Examples of the solvent include acetone, methanol, ethanol, butanol, 2-propanol, 2-methoxyethanol, 2-ethoxyethanol, 1-methoxy-2-propanol, 2-acetyl Oxy-1-methoxypropane, toluene, xylene, methyl ethyl ketone, N,N-dimethylformamide, methyl isobutyl ketone, N-methyl-pyrrolidone, n-hexane , Cyclohexane, cyclohexanone and naphtha as a mixture.

上述溶劑大多較佳為於將上述絕緣樹脂層成形時被去除。因此,上述溶劑之沸點較佳為200℃以下,更佳為180℃以下。上述絕緣樹脂層中之上述溶劑之含量並無特別限定。上述溶劑之含量能夠適當變更至可維持上述絕緣樹脂層之層形狀之程度。Most of the solvents are preferably removed when the insulating resin layer is molded. Therefore, the boiling point of the above solvent is preferably 200°C or lower, and more preferably 180°C or lower. The content of the solvent in the insulating resin layer is not particularly limited. The content of the above-mentioned solvent can be appropriately changed to such an extent that the layer shape of the above-mentioned insulating resin layer can be maintained.

[其他成分] 以耐衝擊性、耐熱性、樹脂之相溶性及作業性等之改善為目的,於上述絕緣樹脂層中亦可添加調平劑、阻燃劑、偶合劑、著色劑、抗氧化劑、抗紫外線化劑、消泡劑、增黏劑、觸變性賦予劑及除環氧化合物以外之其他熱硬化性樹脂等。[Other ingredients] For the purpose of improving impact resistance, heat resistance, resin compatibility and workability, etc., leveling agents, flame retardants, coupling agents, colorants, antioxidants, and UV resistance can also be added to the above-mentioned insulating resin layer Agents, defoamers, tackifiers, thixotropy-imparting agents and other thermosetting resins other than epoxy compounds.

作為上述偶合劑,可列舉:矽烷偶合劑、鈦偶合劑及鋁偶合劑等。作為上述矽烷偶合劑,可列舉:乙烯基矽烷、胺基矽烷、咪唑矽烷及環氧矽烷等。Examples of the coupling agent include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Examples of the silane coupling agent include vinyl silane, amino silane, imidazole silane, and epoxy silane.

作為上述其他熱硬化性樹脂,可列舉:聚苯醚樹脂、二乙烯基苄醚樹脂、聚芳酯樹脂、鄰苯二甲酸二烯丙酯樹脂、聚醯亞胺樹脂、苯并㗁𠯤樹脂、苯并㗁唑樹脂及丙烯酸酯樹脂等。Examples of the above other thermosetting resins include polyphenylene ether resins, divinyl benzyl ether resins, polyarylate resins, diallyl phthalate resins, polyimide resins, benzo resins, Benzoazole resin and acrylate resin etc.

作為獲得上述絕緣樹脂層之方法,可列舉以下之方法等。擠出成形法:使用擠出機,將用以形成絕緣樹脂層之材料進行熔融混練,擠出後,藉由T型模頭或圓形模具等而成形為膜狀。流延成形法:將用以形成包含溶劑之絕緣樹脂層之材料流延而成形為膜狀。先前公知之其他膜成形法。又,亦可於基材膜上積層用以形成絕緣樹脂層之材料,進行加熱乾燥而獲得絕緣樹脂層。就能夠應對薄型化之方面而言,較佳為擠出成形法或流延成形法。膜包括片材。As a method of obtaining the above-mentioned insulating resin layer, the following methods and the like can be mentioned. Extrusion molding method: Use an extruder to melt and knead the material used to form the insulating resin layer. After extrusion, the material is formed into a film shape by a T-die or a round die. Casting method: The material used to form the insulating resin layer containing a solvent is cast to form a film. Other previously known film forming methods. Alternatively, a material for forming an insulating resin layer may be laminated on the base film, and heated and dried to obtain an insulating resin layer. In terms of being able to cope with thinning, the extrusion molding method or the casting molding method is preferable. The film includes sheets.

將用以形成絕緣樹脂層之材料成形為膜狀,以利用熱之硬化不會過度進行之程度例如於50℃~150℃下加熱乾燥1分鐘~10分鐘,藉此可獲得作為B-階段膜之絕緣樹脂層。The material used to form the insulating resin layer is formed into a film shape, so that the curing by heat does not excessively progress, for example, heating and drying at 50°C to 150°C for 1 to 10 minutes, thereby obtaining a B-stage film The insulating resin layer.

將可藉由如上述之乾燥步驟所獲得之膜狀絕緣樹脂層稱為B-階段膜。上述B-階段膜處於半硬化狀態。半硬化物未完全地硬化,能夠進一步進行硬化。The film-like insulating resin layer obtainable by the drying step as described above is called a B-stage film. The above B-stage film is in a semi-hardened state. The semi-hardened product is not completely hardened, and can be further hardened.

上述絕緣樹脂層較佳為B-階段膜。The insulating resin layer is preferably a B-stage film.

上述絕緣樹脂層(於上述絕緣樹脂層為B-階段膜之情形時,為B-階段膜)於60℃以上180℃以下之溫度範圍下之最低熔融黏度較佳為5 mPa・s以上,較佳為10 mPa・s以上。若上述最低熔融黏度為上述下限以上,則可防止於層壓、加壓加工時樹脂滲出至非意欲之區域,可有效地抑制於硬化後剝離基材膜時之剝離不良,進而,亦可有效地抑制自然剝離。上述絕緣樹脂層(於上述絕緣樹脂層為B-階段膜之情形時,為該B-階段膜)於60℃以上180℃以下之溫度範圍下之最低熔融黏度之上限並無特別限定。上述絕緣樹脂層(於上述絕緣樹脂層為B-階段膜之情形時,為該B-階段膜)於60℃以上180℃以下之溫度範圍下之最低熔融黏度可為200 mPa・s以下,亦可為150 mPa・s以下,可為100 mPa・s以下,亦可為75 mPa・s以下。The minimum melting viscosity of the insulating resin layer (in the case where the insulating resin layer is a B-stage film is B-stage film) in the temperature range of 60°C or more and 180°C or less is preferably 5 mPa·s or more. It is preferably 10 mPa·s or more. If the above-mentioned minimum melt viscosity is above the above-mentioned lower limit, it can prevent the resin from oozing out into unintended areas during lamination and pressure processing, and can effectively suppress the peeling failure when peeling the base film after curing, and furthermore, it can also be effective To suppress natural peeling. The upper limit of the minimum melt viscosity of the insulating resin layer (the B-stage film when the insulating resin layer is a B-stage film) in a temperature range of 60°C or more and 180°C or less is not particularly limited. The minimum melting viscosity of the insulating resin layer (the B-stage film when the insulating resin layer is a B-stage film) in the temperature range of 60°C or more and 180°C or less may be 200 mPa·s or less. It can be 150 mPa·s or less, 100 mPa·s or less, or 75 mPa·s or less.

上述最低熔融黏度時之溫度較佳為140℃以下,更佳為130℃以下。若上述最低熔融黏度時之溫度為上述上限以下,則可有效地抑制伴隨基材膜之收縮之自然剝離。The temperature at the above minimum melt viscosity is preferably 140°C or lower, and more preferably 130°C or lower. If the temperature at the lowest melt viscosity is below the upper limit, the natural peeling accompanying the shrinkage of the base film can be effectively suppressed.

上述最低熔融黏度係使用流變儀裝置(例如,TA Instruments公司製造之「AR-2000」),於頻率6.28 rad/sec、開始溫度60℃、升溫速度5℃/min、應變21.8%之條件下測定動態黏彈性而求出。The above-mentioned minimum melt viscosity is obtained by using a rheometer device (for example, "AR-2000" manufactured by TA Instruments) at a frequency of 6.28 rad/sec, a starting temperature of 60°C, a heating rate of 5°C/min, and a strain of 21.8% It is determined by measuring the dynamic viscoelasticity.

就使絕緣樹脂層(於絕緣樹脂層為B-階段膜之情形時,為B-階段膜)之層壓性進一步良好,進一步抑制絕緣樹脂層之硬化不均之觀點而言,上述絕緣樹脂層之厚度較佳為5 μm以上,更佳為10 μm以上,且較佳為200 μm以下,更佳為100 μm以下。From the viewpoint of further improving the lamination of the insulating resin layer (in the case where the insulating resin layer is a B-stage film, the B-stage film), and further suppressing uneven curing of the insulating resin layer, the above-mentioned insulating resin layer The thickness is preferably 5 μm or more, more preferably 10 μm or more, and preferably 200 μm or less, and more preferably 100 μm or less.

(保護膜) 上述積層膜較佳為於上述絕緣樹脂層之與上述基材膜側相反之表面上積層有保護膜。(Protection film) The laminated film preferably has a protective film laminated on a surface of the insulating resin layer opposite to the base film side.

作為上述保護膜之材料,可列舉:聚丙烯及聚乙烯等聚烯烴、以及聚對苯二甲酸乙二酯等。上述保護膜之材料較佳為聚烯烴,更佳為聚丙烯。Examples of the material of the protective film include polyolefins such as polypropylene and polyethylene, and polyethylene terephthalate. The material of the protective film is preferably polyolefin, and more preferably polypropylene.

就使絕緣樹脂層之保護性進一步良好之觀點而言,上述保護膜之厚度較佳為5 μm以上,更佳為10 μm以上,且較佳為75 μm以下,更佳為60 μm以下。From the viewpoint of further improving the protection of the insulating resin layer, the thickness of the protective film is preferably 5 μm or more, more preferably 10 μm or more, and preferably 75 μm or less, more preferably 60 μm or less.

(積層膜之其他細節) 本發明之積層膜可較佳地用於在多層印刷配線板形成絕緣層。上述絕緣樹脂層可較佳地用於在多層印刷配線板形成絕緣層。藉由本發明之積層膜之絕緣樹脂層,可形成絕緣層。(Other details of laminated film) The laminated film of the present invention can be preferably used to form an insulating layer on a multilayer printed wiring board. The above-mentioned insulating resin layer can be preferably used for forming an insulating layer on a multilayer printed wiring board. The insulating layer can be formed by the insulating resin layer of the laminated film of the present invention.

作為多層印刷配線板之一例,可列舉具備電路基板、積層於該電路基板上之複數個絕緣層、及配置於複數個上述絕緣層間之金屬層之多層印刷配線板。上述絕緣層中之至少1層由上述絕緣樹脂層所形成。與上述電路基板相接之絕緣層亦可由上述絕緣樹脂層所形成。配置於2個絕緣層間之絕緣層亦可由上述絕緣樹脂層所形成。最遠離上述電路基板之絕緣層亦可由上述絕緣樹脂層所形成。亦可於複數個上述絕緣層中遠離上述電路基板之絕緣層之外側表面上配置金屬層。As an example of the multilayer printed wiring board, a multilayer printed wiring board including a circuit board, a plurality of insulating layers laminated on the circuit board, and a metal layer disposed between the plurality of insulating layers may be mentioned. At least one of the insulating layers is formed of the insulating resin layer. The insulating layer in contact with the circuit board may be formed of the insulating resin layer. The insulating layer disposed between the two insulating layers may be formed of the insulating resin layer. The insulating layer farthest from the circuit board may also be formed of the insulating resin layer. A metal layer may be disposed on the outer surface of the plurality of insulating layers away from the insulating layer of the circuit board.

(積層構造體之製造方法) 本發明之積層構造體之製造方法具備積層步驟:使用上述積層膜,於積層有上述基材膜及上述絕緣樹脂層之狀態下,將上述絕緣樹脂層之與上述基材膜相反側之表面積層於表面具有金屬層之積層對象構件上。本發明之積層構造體之製造方法具備導通孔形成步驟:於積層有上述基材膜及上述絕緣樹脂層之狀態下,自上述基材膜側向上述絕緣樹脂層照射雷射而形成導通孔。(Manufacturing method of laminated structure) The method for manufacturing a laminated structure of the present invention includes a laminating step: using the laminated film, and in a state where the base film and the insulating resin layer are laminated, a surface area layer of the insulating resin layer on the opposite side of the base film On the object to be laminated with a metal layer on the surface. The manufacturing method of the laminated structure of the present invention includes a via hole forming step of forming a via hole by irradiating the insulating resin layer with laser light from the base film side with the base film and the insulating resin layer stacked.

本發明之積層構造體之製造方法由於具備上述構成,故而於上述硬化步驟中可抑制基材膜自絕緣樹脂層自然剝離。Since the manufacturing method of the laminated structure of the present invention has the above-mentioned structure, it is possible to suppress the natural peeling of the base film from the insulating resin layer in the curing step.

(積層步驟) 於本發明之積層構造體之製造方法中,使用上述積層膜,於積層有上述基材膜及上述絕緣樹脂層之狀態下,將上述絕緣樹脂層之與上述基材膜相反側之表面積層於表面具有金屬層之積層對象構件上。(Stacking step) In the manufacturing method of the laminated structure of the present invention, the above-mentioned laminated film is used, and in the state where the above-mentioned base film and the above-mentioned insulating resin layer are laminated, the surface area of the insulating resin layer opposite to the above-mentioned base film is layered on The object to be laminated with a metal layer on the surface.

於上述積層步驟中,於上述積層膜具備上述保護膜之情形時,將保護膜剝離,將藉由剝離所露出之上述絕緣樹脂層之表面積層於表面具有金屬層之積層對象構件上。In the layering step, when the layered film is provided with the protective film, the protective film is peeled off, and the surface area layer of the insulating resin layer exposed by the peeling is placed on the layered object member having a metal layer on the surface.

上述積層步驟較佳為藉由層壓進行。上述層壓時之溫度較佳為80℃以上,且較佳為120℃以下。The above lamination step is preferably performed by lamination. The temperature during the above lamination is preferably 80°C or higher, and preferably 120°C or lower.

(硬化步驟) 本發明之積層構造體之製造方法較佳為具備使上述絕緣樹脂層硬化之硬化步驟。(Hardening step) The manufacturing method of the laminated structure of the present invention preferably includes a hardening step of hardening the insulating resin layer.

於本發明之積層構造體之製造方法中,較佳為使上述絕緣樹脂層硬化。於上述硬化步驟中,使上述絕緣樹脂層硬化而形成硬化物。上述硬化步驟中之上述絕緣樹脂層之硬化可為預硬化。上述硬化物亦包括能夠進一步硬化之預硬化物。於上述硬化步驟中,亦可使上述絕緣樹脂層預硬化而獲得B-階段膜。In the manufacturing method of the laminated structure of the present invention, it is preferable to harden the insulating resin layer. In the above curing step, the insulating resin layer is cured to form a cured product. The hardening of the insulating resin layer in the hardening step may be pre-hardening. The above-mentioned hardened products also include pre-hardened products that can be further hardened. In the curing step, the insulating resin layer may be pre-cured to obtain a B-stage film.

上述硬化步驟較佳為藉由加熱進行。上述加熱溫度較佳為130℃以上,且較佳為200℃以下。上述加熱時間較佳為30分鐘以上,且較佳為120分鐘以下。The above hardening step is preferably performed by heating. The above heating temperature is preferably 130°C or higher, and preferably 200°C or lower. The above heating time is preferably 30 minutes or more, and preferably 120 minutes or less.

為了於藉由使上述絕緣樹脂層預硬化而獲得之硬化物之表面形成微細之凹凸,較佳為對硬化物進行粗化處理。較佳為於粗化處理之前對硬化物進行膨潤處理。對於硬化物,較佳為於預硬化之後且粗化處理之前進行膨潤處理,進而於粗化處理之後進行硬化。但是,硬化物亦可不必進行膨潤處理。In order to form fine irregularities on the surface of the cured product obtained by pre-curing the insulating resin layer, it is preferable to roughen the cured product. Preferably, the hardened product is subjected to swelling treatment before the roughening treatment. The cured product is preferably subjected to swelling treatment after pre-curing and before roughening treatment, and then hardened after roughening treatment. However, the hardened product need not be subjected to swelling treatment.

作為上述膨潤處理之方法,例如可使用如下方法:藉由以乙二醇等為主成分之化合物之水溶液或有機溶劑分散溶液等對硬化物進行處理。用於膨潤處理之膨潤液通常作為pH調整劑等包含鹼。膨潤液較佳為包含氫氧化鈉。具體而言,例如上述膨潤處理係藉由如下方式進行:使用40重量%之乙二醇水溶液等,於處理溫度30℃~85℃下對硬化物處理1分鐘~30分鐘。上述膨潤處理之溫度較佳為50℃~85℃之範圍內。若上述膨潤處理之溫度過低,則有膨潤處理需要較長時間,進而硬化物與金屬層之接著強度變低之傾向。As a method of the above swelling treatment, for example, a method of treating the hardened material with an aqueous solution of a compound mainly composed of ethylene glycol or the like or an organic solvent dispersion solution or the like can be used. The swelling liquid used for swelling treatment usually contains an alkali as a pH adjuster or the like. The swelling liquid preferably contains sodium hydroxide. Specifically, for example, the swelling treatment is performed by using a 40% by weight aqueous ethylene glycol solution or the like to treat the cured product at a treatment temperature of 30°C to 85°C for 1 to 30 minutes. The temperature of the swelling treatment is preferably in the range of 50°C to 85°C. If the temperature of the swelling treatment is too low, the swelling treatment takes a long time, and the bonding strength between the hardened product and the metal layer tends to be low.

上述粗化處理例如可使用錳化合物、鉻化合物或過硫酸化合物等化學氧化劑等。該等化學氧化劑於添加水或有機溶劑後用作水溶液或有機溶劑分散溶液。粗化處理所使用之粗化液通常作為pH調整劑等包含鹼。粗化液較佳為包含氫氧化鈉。For the roughening treatment, for example, a chemical oxidizing agent such as a manganese compound, chromium compound, or persulfate compound can be used. These chemical oxidants are used as aqueous solutions or organic solvent dispersion solutions after adding water or organic solvents. The roughening liquid used for the roughening treatment usually contains an alkali as a pH adjuster or the like. The roughening liquid preferably contains sodium hydroxide.

作為上述錳化合物,可列舉過錳酸鉀及過錳酸鈉等。作為上述鉻化合物,可列舉重鉻酸鉀及鉻酸酐鉀等。作為上述過硫酸化合物,可列舉:過硫酸鈉、過硫酸鉀及過硫酸銨等。Examples of the above-mentioned manganese compound include potassium permanganate and sodium permanganate. Examples of the chromium compound include potassium dichromate and potassium chromate. Examples of the persulfate compound include sodium persulfate, potassium persulfate, and ammonium persulfate.

硬化物之表面之算術平均粗糙度Ra較佳為5 nm以上,更佳為10 nm以上,且較佳為400 nm以下,更佳為未達400 nm,更佳為300 nm以下,進而較佳為未達300 nm,尤佳為未達200 nm,最佳為未達150 nm。於該情形時,硬化物與金屬層之接著強度變高,進而於絕緣層之表面形成進一步微細之配線。進而,可抑制導體損耗,而可將信號損耗抑制為較低。The arithmetic average roughness Ra of the surface of the hardened product is preferably 5 nm or more, more preferably 10 nm or more, and preferably 400 nm or less, more preferably less than 400 nm, more preferably 300 nm or less, and more preferably It is less than 300 nm, particularly preferably less than 200 nm, and most preferably less than 150 nm. In this case, the bonding strength between the hardened material and the metal layer becomes higher, and further fine wiring is formed on the surface of the insulating layer. Furthermore, conductor loss can be suppressed, and signal loss can be suppressed low.

(導通孔形成步驟) 於本發明之積層構造體之製造方法中,於積層有上述基材膜及上述絕緣樹脂層之狀態下,自上述基材膜側向上述絕緣樹脂層照射雷射而形成導通孔。(Steps for forming via holes) In the manufacturing method of the laminated structure of the present invention, in a state where the base film and the insulating resin layer are stacked, a laser is irradiated from the base film side to the insulating resin layer to form a via hole.

作為上述導通孔形成步驟所使用之雷射,可列舉CO2 雷射及UV(Ultraviolet,紫外線)雷射等。Examples of the laser used in the above-mentioned via formation step include CO 2 laser and UV (Ultraviolet) laser.

就使用通用之聚對苯二甲酸乙二酯(PET)膜作為基材之觀點而言,上述雷射較佳為CO2 雷射。另一方面,於使用UV雷射作為雷射之情形時,較佳為使用聚萘二甲酸乙二酯(PEN)膜及含有紫外線吸收劑之膜等。From the viewpoint of using a general-purpose polyethylene terephthalate (PET) film as a substrate, the above-mentioned laser is preferably a CO 2 laser. On the other hand, when UV laser is used as the laser, it is preferable to use polyethylene naphthalate (PEN) film, a film containing an ultraviolet absorber, and the like.

所形成之導通孔之直徑並無特別限定,但較佳為80 μm以下。導通孔之直徑可為10 μm以上,可為30 μm以上,亦可為60 μm以上。The diameter of the formed via hole is not particularly limited, but it is preferably 80 μm or less. The diameter of the via hole may be 10 μm or more, 30 μm or more, or 60 μm or more.

(除膠渣步驟) 本發明之積層構造體之製造方法較佳為於上述導通孔形成步驟後具備藉由除膠渣處理將上述導通孔內部之膠渣去除之步驟(除膠渣步驟)。藉由具備上述除膠渣步驟,可有效地去除來自上述導通孔形成步驟中所形成之樹脂成分之樹脂之殘渣即膠渣。(Steps of removing slag) The manufacturing method of the laminated structure of the present invention preferably includes a step of removing the dross inside the via hole by the dross removal process (the dross removal step) after the via hole formation step. By including the above-mentioned scum removal step, it is possible to effectively remove the slag which is the resin residue from the resin component formed in the above-mentioned via formation step.

於上述除膠渣步驟中例如使用錳化合物、鉻化合物或過硫酸化合物等化學氧化劑等。該等化學氧化劑係於添加水或有機溶劑後用作水溶液或有機溶劑分散溶液。除膠渣步驟所使用之除膠渣處理液通常包含鹼。除膠渣處理液較佳為包含氫氧化鈉。In the above slag removal step, for example, a chemical oxidizing agent such as a manganese compound, a chromium compound, or a persulfate compound is used. These chemical oxidants are used as aqueous solutions or organic solvent dispersion solutions after adding water or organic solvents. The dross removal treatment liquid used in the dross removal step usually contains alkali. The slag removal treatment liquid preferably contains sodium hydroxide.

上述除膠渣步驟可兼作對上述絕緣樹脂層之表面進行粗化處理之粗化處理步驟。The above-mentioned scum removal step can also be used as a roughening treatment step for roughening the surface of the insulating resin layer.

(剝離步驟) 本發明之積層構造體之製造方法較佳為於上述除膠渣步驟後具備將上述基材膜自上述絕緣樹脂層剝離之步驟(剝離步驟)。(Stripping step) The manufacturing method of the laminated structure of the present invention preferably includes a step (peeling step) of peeling the base film from the insulating resin layer after the scum removal step.

上述剝離步驟較佳為使用自動剝離裝置進行。The above peeling step is preferably performed using an automatic peeling device.

於本發明之積層構造體之製造方法中,由於具備上述構成,故而於上述剝離步驟中可抑制基材膜之剝離不良。Since the manufacturing method of the laminated structure of the present invention includes the above-mentioned structure, the peeling failure of the base film can be suppressed in the peeling step.

(其他步驟) 本發明之積層構造體之製造方法較佳為具備鍍覆步驟以及正式硬化步驟之各步驟,上述鍍覆步驟係於上述剝離步驟後藉由鍍覆處理於藉由剝離所露出之絕緣樹脂層之表面形成金屬層,上述正式硬化步驟係於上述鍍覆步驟後,使絕緣樹脂層進一步硬化。(Other steps) The manufacturing method of the laminated structure of the present invention preferably includes each step of a plating step and a formal hardening step. The plating step is performed after the peeling step by plating treatment on the insulating resin layer exposed by peeling. A metal layer is formed on the surface. The above-mentioned main hardening step is after the above-mentioned plating step, and further hardens the insulating resin layer.

以下,藉由列舉實施例及比較例而具體地說明本發明。本發明並不限定於以下之實施例。Hereinafter, the present invention will be specifically described by citing examples and comparative examples. The present invention is not limited to the following embodiments.

(基材膜) 基材膜A(聚對苯二甲酸乙二酯(PET)膜(LINTEC公司製造之「25X」),厚度25 μm,寬度550 mm,絕緣樹脂層側之表面之算術平均粗糙度Ra30 nm) 基材膜B(聚對苯二甲酸乙二酯(PET)膜(LINTEC公司製造之「386501」),厚度38 μm,寬度550 mm,絕緣樹脂層側之表面之算術平均粗糙度Ra30 nm) 基材膜C(聚對苯二甲酸乙二酯(PET)膜(LINTEC公司製造之「PLD386502」),厚度38 μm,寬度550 mm,絕緣樹脂層側之表面之算術平均粗糙度Ra7 nm)(Substrate film) Base film A (polyethylene terephthalate (PET) film ("25X" manufactured by LINTEC), thickness 25 μm, width 550 mm, arithmetic average roughness Ra30 nm on the surface of the insulating resin layer) Base film B (polyethylene terephthalate (PET) film ("386501" manufactured by LINTEC), thickness 38 μm, width 550 mm, arithmetic average roughness Ra30 nm on the surface of the insulating resin layer) Base film C (polyethylene terephthalate (PET) film ("PLD386502" manufactured by LINTEC), thickness 38 μm, width 550 mm, arithmetic average roughness Ra7 nm on the surface of the insulating resin layer)

上述算術平均粗糙度係使用非接觸型表面粗糙度計(Veeco Instruments公司製造之「WYKONT3300」),於VSI接觸模式下,藉由50倍透鏡並將測定範圍設為95.6 μm×71.7 μm而測得。再者,設為將閾值設為1%,進行中值過濾(窗口:5尺寸)、傾斜修正之條件下之上述算術平均粗糙度於隨機選擇之10處測定位置進行測定,採用測定值之平均值。The above arithmetic average roughness was measured using a non-contact surface roughness meter ("WYKONT3300" manufactured by Veeco Instruments) in a VSI contact mode with a 50x lens and the measurement range set to 95.6 μm×71.7 μm . In addition, the threshold is set to 1%, and the above arithmetic average roughness under the conditions of median filtering (window: 5 size) and tilt correction is measured at 10 randomly selected measurement positions, and the average of the measured values is used value.

(用以形成絕緣樹脂層之材料) 以下述方式準備用以形成絕緣樹脂層之材料。(Material used to form the insulating resin layer) The material for forming the insulating resin layer is prepared in the following manner.

用以形成絕緣樹脂層A之材料: 準備乙烯基矽烷處理二氧化矽(Admatechs公司製造之「SOC2」)之環己酮漿料(固形物成分70重量%)69.3重量份。向該漿料加入聯苯型環氧化合物(日本化藥公司製造之「NC3000H」)5.6重量份、雙酚F型環氧化合物(DIC公司製造之「830S」)5.3重量份、及茀型環氧化合物(Osaka Gas Chemicals公司製造之「OGSOL PG-100」)2.0重量份。使用攪拌機,以1200 rpm攪拌60分鐘,確認到未溶解物消失。其後,加入酚系酚醛清漆硬化劑(明和化成公司製造之「H4」)1.6重量份及活性酯硬化劑(DIC公司製造之「HPC-8000-65T」)之甲苯混合溶液(固形物成分65重量%)13重量份,以1200 rpm攪拌60分鐘,確認到未溶解物消失。準備雙酚苯乙酮骨架苯氧基樹脂(三菱化學公司製造之「YX6954」)之甲基乙基酮及環己酮混合溶液(固形物成分30重量%)。進而加入該混合溶液(固形物成分30重量%)3.6重量份、2-乙基-4-甲基咪唑(四國化成工業公司製造之「2E4MZ」)0.3重量份及調平劑(楠本化成公司製造之「LS-480」)0.1重量份。以1200 rpm攪拌30分鐘,獲得用以形成絕緣樹脂層A之材料(清漆)。Materials used to form the insulating resin layer A: Prepare 69.3 parts by weight of cyclohexanone slurry (solid content 70% by weight) of vinyl silane-treated silica ("SOC2" manufactured by Admatechs). To this slurry, 5.6 parts by weight of a biphenyl type epoxy compound ("NC3000H" manufactured by Nippon Kayaku Co., Ltd.), 5.3 parts by weight of a bisphenol F type epoxy compound ("830S" manufactured by DIC Corporation), and a fusel ring Oxygen compound ("OGSOL PG-100" manufactured by Osaka Gas Chemicals) 2.0 parts by weight. Using a stirrer, stirring at 1200 rpm for 60 minutes, it was confirmed that the undissolved matter disappeared. Thereafter, 1.6 parts by weight of a phenolic novolac hardener ("H4" manufactured by Meiwa Chemical Co., Ltd.) and a toluene mixed solution (solid content 65) of an active ester hardener ("HPC-8000-65T" manufactured by DIC Corporation) were added. 13% by weight), stirring at 1200 rpm for 60 minutes, and it was confirmed that the undissolved matter disappeared. A methyl ethyl ketone and cyclohexanone mixed solution (solid content 30% by weight) of bisphenol acetophenone skeleton phenoxy resin ("YX6954" manufactured by Mitsubishi Chemical Corporation) was prepared. Furthermore, 3.6 parts by weight of the mixed solution (solid content 30% by weight), 0.3 parts by weight of 2-ethyl-4-methylimidazole ("2E4MZ" manufactured by Shikoku Chemical Industry Co., Ltd.), and a leveling agent (Nanmoto Chemical Co., Ltd.) Manufactured "LS-480") 0.1 parts by weight. Stir at 1200 rpm for 30 minutes to obtain a material (varnish) for forming the insulating resin layer A.

用以形成絕緣樹脂層B之材料: 將活性酯硬化劑(DIC公司製造之「HPC-8000-65T」)變更為酚系酚醛清漆硬化劑(明和化成公司製造之「MEH7851-H」),除此以外,與用以形成絕緣樹脂層A之材料同樣地獲得用以形成絕緣樹脂層B之材料(清漆)。The material used to form the insulating resin layer B: The active ester hardener ("HPC-8000-65T" manufactured by DIC Corporation) was changed to a phenolic novolac hardener ("MEH7851-H" manufactured by Meiwa Chemical Industry Co., Ltd.), and used to form an insulating resin layer The material of A is similarly obtained as the material (varnish) for forming the insulating resin layer B.

(實施例1) 於基材膜之表面上配置絕緣樹脂層之步驟: 使用模嘴塗佈機,於基材膜A上,除基材之寬度方向上之距離兩端部20 mm之範圍以外,以寬度510 mm塗佈所獲得之用以形成絕緣樹脂層A之材料(清漆)後,以平均溫度100℃乾燥3分鐘而使溶劑揮發。如此,於基材膜A上形成厚度為40 μm且寬度為510 mm之絕緣樹脂層A,獲得積層體。(Example 1) The steps of disposing the insulating resin layer on the surface of the base film: Using a die coater, apply the material used to form the insulating resin layer A to the substrate film A, except for the width of the substrate in the width direction of 20 mm from both ends, at a width of 510 mm After (varnish), it was dried at an average temperature of 100°C for 3 minutes to volatilize the solvent. In this way, an insulating resin layer A having a thickness of 40 μm and a width of 510 mm was formed on the base film A to obtain a laminate.

使積層體之寬度方向上之一端面對齊之步驟: 於所獲得之積層體之寬度方向上之自一端部(另一端)朝向內側30 mm之位置、及自與該另一端相反之端部(一端)朝向內側18 mm之位置上,使用切條機以10 m/min之速度進行切條,將另一端側之基材膜之端面與絕緣樹脂層之端面對齊。如此,獲得於一端側,相對於絕緣樹脂層之端面,基材膜之端面所伸出之距離(Y)為2 mm之積層膜。Steps to align one end face in the width direction of the laminate: Use a strip cutter at a position of 30 mm from one end (the other end) toward the inside in the width direction of the obtained laminate, and at a position 18 mm from the end (the other end) opposite to the other end Cut the strip at a speed of 10 m/min, and align the end surface of the base material film on the other end side with the end surface of the insulating resin layer. In this way, a laminated film obtained on one end side and with respect to the end surface of the insulating resin layer, the distance (Y) over which the end surface of the base film protrudes is 2 mm.

(實施例2~16及比較例1~5) 將基材膜之種類、絕緣樹脂層之種類、於積層膜之一端側相對於絕緣樹脂層之端面,基材膜之端面所伸出之距離(Y)如表1~3所示般進行變更,除此以外,與實施例1同樣地獲得積層膜。(Examples 2 to 16 and Comparative Examples 1 to 5) Change the type of the base film, the type of the insulating resin layer, and the distance (Y) that the end surface of the base film extends from the end surface of the laminated film relative to the end surface of the insulating resin layer as shown in Tables 1 to 3. Except for this, a laminated film was obtained in the same manner as in Example 1.

(評估) (1)基材膜相對於絕緣樹脂層之剝離強度(X) 針對所獲得之積層膜,使用拉力試驗機(島津製作所公司製造之「AG-5000B」),於十字頭速度5 mm/min之條件下進行測定,測定基材膜相對於絕緣樹脂層之剝離強度(X)。(Evaluation) (1) Peel strength of the base film relative to the insulating resin layer (X) The obtained laminated film was measured using a tensile tester ("AG-5000B" manufactured by Shimadzu Corporation) at a crosshead speed of 5 mm/min to measure the peel strength of the base film relative to the insulating resin layer (X).

(2)Y/X 根據於所獲得之積層膜之一端側相對於絕緣樹脂層之端面,基材膜之端面所伸出之距離(Y)、及上述(1)中所測得之基材膜相對於絕緣樹脂層之剝離強度(X),算出Y/X。(2)Y/X According to the distance (Y) at which the end face of the obtained laminated film with respect to the end face of the insulating resin layer, the end face of the base film protrudes, and the base film relative to the insulating resin layer measured in (1) above The peel strength (X) is calculated as Y/X.

(3)最低熔融黏度及最低熔融黏度時之溫度 自所獲得之積層膜剝離基材膜而獲得絕緣樹脂層。針對所獲得之絕緣樹脂層,使用流變儀裝置(TA Instruments公司製造之「AR-2000」),於頻率6.28 rad/sec、開始溫度60℃、升溫速度5℃/min、應變21.8%之條件下測定動態黏彈性,求出最低熔融黏度、及最低熔融黏度時之溫度。將結果示於以下。(3) The lowest melt viscosity and the temperature at the lowest melt viscosity The base film was peeled from the obtained laminated film to obtain an insulating resin layer. For the obtained insulating resin layer, a rheometer device ("AR-2000" manufactured by TA Instruments) was used at a frequency of 6.28 rad/sec, a starting temperature of 60°C, a heating rate of 5°C/min, and a strain of 21.8% The dynamic viscoelasticity is measured below to find the lowest melt viscosity and the temperature at the lowest melt viscosity. The results are shown below.

絕緣樹脂層A:最低熔融黏度98 mPa・s,最低熔融黏度時之溫度137℃ 絕緣樹脂層B:最低熔融黏度50 mPa・s,最低熔融黏度時之溫度128℃Insulating resin layer A: minimum melt viscosity 98 mPa·s, temperature at minimum melt viscosity 137℃ Insulating resin layer B: minimum melt viscosity 50 mPa·s, temperature at minimum melt viscosity 128℃

(4)自然剝離 積層步驟: 準備藉由蝕刻形成有內層電路之340 mm×510 mm之CCL(Copper Clad Laminate,覆銅板層壓板)基板(日立化成工業公司製造之「E679FG」)。將CCL基板之兩面浸漬於銅表面粗化劑(MEC公司製造之「Mec Etch Bond CZ-8101」)中,而對銅表面進行粗化處理。(4) Natural peeling Stacking steps: Prepare a 340 mm × 510 mm CCL (Copper Clad Laminate) substrate ("E679FG" manufactured by Hitachi Chemical Industry Co., Ltd.) with an inner layer circuit formed by etching. The two surfaces of the CCL substrate were immersed in a copper surface roughening agent ("Mec Etch Bond CZ-8101" manufactured by MEC Corporation) to roughen the copper surface.

將所獲得之積層膜切成325 mm×502 mm,自樹脂膜側安裝於上述CCL基板之兩面,使用隔膜式真空貼合機(名機製作所公司製造之「MVLP-500」)而層壓於上述CCL基板之兩面,獲得未硬化積層樣品A。層壓係藉由如下方式進行:減壓20秒而將氣壓設為13 hPa以下,於100℃下加壓20秒,進而於100℃、壓力0.8 MPa下加壓40秒鐘。The obtained laminated film was cut into 325 mm × 502 mm, mounted on both sides of the above CCL substrate from the resin film side, and laminated using a diaphragm-type vacuum laminating machine ("MVLP-500" manufactured by Mingji Manufacturing Co., Ltd.) On both sides of the above CCL substrate, an uncured laminated sample A was obtained. The lamination was performed by depressurizing for 20 seconds, setting the air pressure to 13 hPa or less, pressurizing at 100°C for 20 seconds, and further pressurizing at 100°C and a pressure of 0.8 MPa for 40 seconds.

硬化步驟: 於加熱溫度180℃下對上述絕緣樹脂層加熱30分鐘,而使絕緣樹脂層預硬化。Hardening steps: The insulating resin layer is heated at a heating temperature of 180° C. for 30 minutes to pre-harden the insulating resin layer.

於上述硬化步驟中,藉由目視來確認基材膜是否自絕緣樹脂層產生自然剝離。In the above hardening step, it is visually confirmed whether the base film is naturally peeled off from the insulating resin layer.

[自然剝離之評估基準] ○:未產生自然剝離 △:稍微產生自然剝離 ×:產生自然剝離[Evaluation criteria for natural divestiture] ○: No natural peeling occurs △: Natural peeling occurs slightly ×: Natural peeling occurs

(5)基材膜之破裂(剝離不良) 進行上述(4)自然剝離之評估後,進行以下之步驟。(5) Cracking of substrate film (defective peeling) After the evaluation of (4) natural peeling mentioned above, perform the following steps.

導通孔形成步驟: 於積層有基材膜與絕緣樹脂層(B-階段膜)且經預硬化之狀態下,自基材膜側對絕緣樹脂層照射CO2 雷射(Hitachi Via Mechanics公司製造之「LC-4KF212」),以導通孔之上端直徑成為60 μm之方式形成貫通基材膜及絕緣樹脂層之導通孔。再者,CO2 雷射之照射條件係設為如下。Steps for forming via holes: In a state where the base film and the insulating resin layer (B-stage film) are laminated and pre-cured, the insulating resin layer is irradiated with CO 2 laser from the base film side (manufactured by Hitachi Via Mechanics) "LC-4KF212"), a via hole penetrating through the base film and the insulating resin layer is formed so that the diameter of the upper end of the via hole becomes 60 μm. In addition, the irradiation conditions of CO 2 laser are set as follows.

[CO2 雷射之照射條件] 加工模式峰值(Burst) 週期0.100 ms 脈衝寬度0.018 ms 脈衝數3發 光圈3.5 mm 第二光圈28 mm 功率3.3 W[CO 2 laser irradiation conditions] Processing mode peak (Burst) period 0.100 ms pulse width 0.018 ms pulse number 3 luminous circle 3.5 mm second iris 28 mm power 3.3 W

剝離步驟: 將上述基材膜自上述絕緣樹脂層剝離。Stripping steps: The base film is peeled from the insulating resin layer.

於上述剝離步驟中,藉由目視確認基材膜是否破裂。In the above peeling step, it was visually confirmed whether the base film was broken.

[基材膜破裂之評估基準] ○:未產生基材膜之破裂 △:稍微產生基材膜之破裂 ×:產生基材膜之破裂[Evaluation criteria for substrate film rupture] ○: No cracking of the base film △: The substrate film is slightly broken ×: Cracking of the base film occurred

將積層膜之構成、及結果示於下述之表1~3。The structure of the laminated film and the results are shown in Tables 1 to 3 below.

[表1]

Figure 108120657-A0304-0001
[Table 1]
Figure 108120657-A0304-0001

[表2]

Figure 108120657-A0304-0002
[Table 2]
Figure 108120657-A0304-0002

[表3]

Figure 108120657-A0304-0003
[table 3]
Figure 108120657-A0304-0003

1‧‧‧積層膜 1A‧‧‧積層膜 1Aa‧‧‧一端 1Ab‧‧‧另一端 1a‧‧‧一端 1b‧‧‧另一端 2‧‧‧基材膜 2A‧‧‧基材膜 2Aa‧‧‧第1表面 2a‧‧‧第1表面 3‧‧‧絕緣樹脂層 3A‧‧‧絕緣樹脂層 Y‧‧‧於積層膜之一端側基材膜之伸出距離1‧‧‧ laminated film 1A‧‧‧Lamination film 1Aa‧‧‧one end 1Ab‧‧‧The other end 1a‧‧‧ one end 1b‧‧‧The other end 2‧‧‧ Base film 2A‧‧‧Base film 2Aa‧‧‧1st surface 2a‧‧‧1st surface 3‧‧‧Insulating resin layer 3A‧‧‧Insulating resin layer Y‧‧‧Extending distance of the base film on one end of the laminated film

圖1係表示本發明之第1實施形態之積層膜之剖視圖。 圖2係表示本發明之第2實施形態之積層膜之剖視圖。Fig. 1 is a cross-sectional view showing a laminated film according to a first embodiment of the present invention. 2 is a cross-sectional view showing a laminated film according to a second embodiment of the present invention.

Claims (12)

一種積層膜,其具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層,且 於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出, 於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X為0.5以上15以下。A laminated film comprising a base film and an insulating resin layer laminated on the surface of the base film, and On one end side of the laminated film, the end surface of the base film protrudes to the outside with respect to the end surface of the insulating resin layer, When the peel strength of the base film with respect to the insulating resin layer is X gf/cm, and the extension distance of the base film on the one end side is Y mm, Y/X is 0.5 or more and 15 or less. 如請求項1之積層膜,其中上述X為0.3以上9以下。The laminated film according to claim 1, wherein X is 0.3 or more and 9 or less. 如請求項1或2之積層膜,其中上述Y為0.5以上20以下。The laminated film according to claim 1 or 2, wherein the above Y is 0.5 or more and 20 or less. 如請求項1或2之積層膜,其中上述基材膜之厚度為25 μm以上。The laminated film according to claim 1 or 2, wherein the thickness of the base film is 25 μm or more. 如請求項1或2之積層膜,其中上述基材膜之上述絕緣樹脂層側之表面之算術平均粗糙度Ra為5 nm以上且未達400 nm。The laminated film according to claim 1 or 2, wherein the arithmetic average roughness Ra of the surface of the base film on the side of the insulating resin layer is 5 nm or more and less than 400 nm. 如請求項1或2之積層膜,其中上述絕緣樹脂層含有環氧化合物、無機填充材及硬化劑。The laminated film according to claim 1 or 2, wherein the insulating resin layer contains an epoxy compound, an inorganic filler and a hardener. 如請求項6之積層膜,其中上述硬化劑含有酚化合物、氰酸酯化合物、順丁烯二醯亞胺化合物或活性酯化合物。The laminated film according to claim 6, wherein the hardener contains a phenol compound, a cyanate compound, a maleimide compound or an active ester compound. 如請求項1或2之積層膜,其中於積層膜之與上述一端相反之另一端側,上述基材膜與上述絕緣樹脂層之端面對齊,或者於積層膜之上述一端側及與上述一端相反之另一端側兩側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出,且上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離。The laminated film according to claim 1 or 2, wherein on the other end side of the laminated film opposite to the one end, the base film is aligned with the end surface of the insulating resin layer, or on the one end side of the laminated film and opposite to the one end On both sides of the other end side, with respect to the end surface of the insulating resin layer, the end surface of the base material film extends outward, and the extension distance of the base material film on the other end side is smaller than the base material film on the one end side The reach. 如請求項1或2之積層膜,其中上述絕緣樹脂層之於60℃以上180℃以下之溫度範圍下之最低熔融黏度為5 mPa・s以上。The laminated film according to claim 1 or 2, wherein the minimum melting viscosity of the insulating resin layer in the temperature range of 60°C or more and 180°C or less is 5 mPa·s or more. 如請求項1或2之積層膜,其中上述絕緣樹脂層係用於在多層印刷配線板形成絕緣層。The laminated film according to claim 1 or 2, wherein the above-mentioned insulating resin layer is used to form an insulating layer on a multilayer printed wiring board. 一種積層構造體之製造方法,其具備: 積層步驟,其使用如請求項1至10中任一項之積層膜,於積層有上述基材膜及上述絕緣樹脂層之狀態下,將上述絕緣樹脂層之與上述基材膜相反側之表面積層於表面具有金屬層之積層對象構件上;以及 導通孔形成步驟,其於積層有上述基材膜及上述絕緣樹脂層之狀態下,自上述基材膜側對上述絕緣樹脂層照射雷射而形成導通孔。A method for manufacturing a laminated structure, which includes: A lamination step using the laminated film according to any one of claims 1 to 10, in a state where the base film and the insulating resin layer are laminated, the surface of the insulating resin layer on the side opposite to the base film Laminated on the laminated object member with a metal layer on the surface; and In the step of forming a via hole, the insulating resin layer is irradiated with laser light from the base film side to form a via hole in a state where the base film and the insulating resin layer are stacked. 如請求項11之積層構造體之製造方法,其於上述積層步驟與上述導通孔形成步驟之間具備使上述絕緣樹脂層硬化之硬化步驟。The method for manufacturing a laminated structure according to claim 11 includes a hardening step for hardening the insulating resin layer between the stacking step and the via hole forming step.
TW108120657A 2018-06-14 2019-06-14 Method for manufacturing laminated film and laminated structure TWI834676B (en)

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