TWI834676B - Method for manufacturing laminated film and laminated structure - Google Patents

Method for manufacturing laminated film and laminated structure Download PDF

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TWI834676B
TWI834676B TW108120657A TW108120657A TWI834676B TW I834676 B TWI834676 B TW I834676B TW 108120657 A TW108120657 A TW 108120657A TW 108120657 A TW108120657 A TW 108120657A TW I834676 B TWI834676 B TW I834676B
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resin layer
insulating resin
mentioned
film
base film
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TW108120657A
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TW202000472A (en
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林達史
西村貴至
馬場奨
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日商積水化學工業股份有限公司
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Abstract

本發明提供一種積層膜,其可抑制於硬化時基材膜自絕緣樹脂層自然剝離,且可抑制於硬化後將基材膜自絕緣樹脂層剝離時基材膜之剝離不良。 本發明之積層膜具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層,且於積層膜之一端側相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出,於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X為0.5以上15以下。The present invention provides a laminated film that can suppress natural peeling of a base film from an insulating resin layer during curing and can suppress peeling failure of the base film when peeling the base film from an insulating resin layer after curing. The laminated film of the present invention includes a base film and an insulating resin layer laminated on the surface of the base film, and on one end side of the laminated film relative to the end surface of the insulating resin layer, the end surface of the base film is the largest on the outside. When the peeling strength of the base film relative to the insulating resin layer is X gf/cm and the protrusion distance of the base film on the one end side is Y mm, Y/X is Above 0.5 and below 15.

Description

積層膜及積層構造體之製造方法Method for manufacturing laminated film and laminated structure

本發明係關於一種具備基材膜及絕緣樹脂層之積層膜。又,本發明係關於一種使用上述積層膜之積層構造體之製造方法。The present invention relates to a laminated film including a base film and an insulating resin layer. Furthermore, the present invention relates to a method of manufacturing a laminated structure using the above-mentioned laminated film.

先前,為了獲得半導體裝置、積層板及印刷配線板等電子零件而使用各種樹脂組合物。例如於多層印刷配線板中,為了形成用以使內部之層間絕緣之絕緣層,或形成位於表層部分之絕緣層而使用樹脂組合物。為了形成上述絕緣層而使用具備基材膜及絕緣樹脂層之積層膜。上述絕緣樹脂層係藉由將上述樹脂組合物製成膜狀而獲得。Conventionally, various resin compositions have been used to obtain electronic components such as semiconductor devices, laminated boards, and printed wiring boards. For example, in a multilayer printed wiring board, a resin composition is used to form an insulating layer for insulating internal layers or to form an insulating layer located on a surface portion. In order to form the above-described insulating layer, a laminated film including a base film and an insulating resin layer is used. The above-mentioned insulating resin layer is obtained by forming the above-mentioned resin composition into a film shape.

於多層印刷配線板等之製造方法中,存在如下情形:於積層有基材膜及絕緣樹脂層之狀態下使該絕緣樹脂層硬化或預硬化而形成絕緣層(硬化物層或預備硬化物層),其後,自硬化或預硬化之絕緣樹脂層剝離基材膜。In the manufacturing method of a multilayer printed wiring board, etc., there may be a case where the insulating resin layer is hardened or pre-hardened in a state in which a base film and an insulating resin layer are laminated to form an insulating layer (hardened material layer or preliminary hardened material layer). ), and then peel off the base film from the hardened or pre-hardened insulating resin layer.

於下述專利文獻1、2中記載有此種製造方法之一例。An example of such a manufacturing method is described in the following Patent Documents 1 and 2.

於下述專利文獻1中揭示有多層印刷配線板之製造方法,其具備如下步驟:於在電路基板之兩面或單面積層有絕緣層及塑膠膜之狀態下,自塑膠膜上向絕緣層照射二氧化碳氣體雷射,形成頂端直徑為100 μm以下之非貫通孔。上述絕緣層含有35質量%以上之無機填充材。The following Patent Document 1 discloses a method for manufacturing a multilayer printed wiring board, which includes the following steps: in a state where an insulating layer and a plastic film are laminated on both sides or a single area of a circuit board, irradiating the insulating layer from the plastic film Carbon dioxide gas laser forms non-through holes with a top diameter of less than 100 μm. The above-mentioned insulating layer contains more than 35% by mass of inorganic filler.

於下述專利文獻2中揭示有具備以下之(A)~(F)步驟之電路基板之製造方法。(A)步驟,其將包含塑膠膜支持體及與該塑膠膜支持體接合之樹脂組合物層之附支持體之樹脂片材以樹脂組合物層與內層基板接合之方式積層於內層基板。(B)步驟,其係使樹脂組合物層熱硬化而形成絕緣層者,且該絕緣層與塑膠膜支持體之密接強度為2 gf/cm~18 gf/cm。(C)步驟,其自塑膠膜支持體上照射雷射而於絕緣層形成頂端直徑40 μm以下之導通孔。(D)步驟,其進行除膠渣處理。(E)步驟,其將塑膠膜支持體剝離。(F)步驟,其於絕緣層之表面形成導體層。 [先前技術文獻] [專利文獻]The following Patent Document 2 discloses a manufacturing method of a circuit board including the following steps (A) to (F). (A) Step, which includes laminating a resin sheet with a support including a plastic film support and a resin composition layer bonded to the plastic film support on the inner substrate in such a manner that the resin composition layer is bonded to the inner substrate. . Step (B) involves thermally hardening the resin composition layer to form an insulating layer, and the adhesion strength between the insulating layer and the plastic film support is 2 gf/cm to 18 gf/cm. (C) Step: irradiate the plastic film support with laser to form a via hole with a top diameter of less than 40 μm in the insulating layer. (D) step, which performs slag removal treatment. (E) step, which peels off the plastic film support. (F) Step of forming a conductor layer on the surface of the insulating layer. [Prior technical literature] [Patent Document]

[專利文獻1]WO2009/066759A1 [專利文獻2]日本專利特開2015-211085號公報[Patent Document 1] WO2009/066759A1 [Patent Document 2] Japanese Patent Application Publication No. 2015-211085

[發明所欲解決之問題][Problem to be solved by the invention]

於如專利文獻1、2中所記載之先前之積層膜(具備基材膜及絕緣樹脂層之積層膜)中,於在積層有基材膜及絕緣樹脂層之狀態下使該絕緣樹脂層硬化之情形時,有時於硬化時基材膜自絕緣樹脂層自然剝離。於產生上述自然剝離之情形時,有時絕緣樹脂層產生硬化不均。又,於如專利文獻1、2中所記載之先前之積層膜中,有時於硬化後自絕緣樹脂層剝離基材膜時,無法良好地將基材膜與絕緣樹脂層剝離而基材膜破裂。In the conventional laminated film (laminated film including a base film and an insulating resin layer) as described in Patent Documents 1 and 2, the insulating resin layer is cured in a state where the base film and the insulating resin layer are laminated. In this case, the base film may naturally peel off from the insulating resin layer during hardening. When the above-mentioned natural peeling occurs, uneven hardening of the insulating resin layer may occur. Furthermore, in the conventional laminated films described in Patent Documents 1 and 2, when the base film is peeled off from the insulating resin layer after curing, the base film and the insulating resin layer may not be peeled off well and the base film may not be properly peeled off. rupture.

本發明之目的在於提供一種積層膜,其可抑制於硬化時基材膜自絕緣樹脂層自然剝離,且可抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良。又,本發明之目的亦在於提供一種使用上述積層膜之積層構造體之製造方法。 [解決問題之技術手段]An object of the present invention is to provide a laminated film that can suppress the natural peeling of the base film from the insulating resin layer during curing and suppress the peeling failure of the base film when peeling off the insulating resin layer after curing. Furthermore, another object of the present invention is to provide a method for manufacturing a laminated structure using the above-mentioned laminated film. [Technical means to solve problems]

根據本發明之廣泛態樣,提供一種積層膜,其具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層,且於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出,於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X為0.5以上15以下。According to a broad aspect of the present invention, there is provided a laminated film, which includes a base film and an insulating resin layer laminated on the surface of the base film, and one end side of the laminated film is opposite to the end surface of the insulating resin layer. , the end surface of the above-mentioned base material film protrudes to the outside to the greatest extent, and the peeling strength of the above-mentioned base material film relative to the above-mentioned insulating resin layer is assumed to be When set to Y mm, Y/X is 0.5 or more and 15 or less.

於本發明之積層膜之某特定態樣中,上述X為0.3以上9以下。In a specific aspect of the laminated film of the present invention, the above-mentioned X is 0.3 or more and 9 or less.

於本發明之積層膜之某特定態樣中,上述Y為0.5以上20以下。In a specific aspect of the laminated film of the present invention, Y is 0.5 or more and 20 or less.

於本發明之積層膜之某特定態樣中,上述基材膜之厚度為25 μm以上。In a specific aspect of the laminated film of the present invention, the thickness of the base film is 25 μm or more.

於本發明之積層膜之某特定態樣中,上述基材膜之上述絕緣樹脂層側之表面之算術平均粗糙度Ra為5 nm以上且未達400 nm。In a specific aspect of the laminated film of the present invention, the arithmetic mean roughness Ra of the surface of the base film on the insulating resin layer side is 5 nm or more and less than 400 nm.

於本發明之積層膜之某特定態樣中,上述絕緣樹脂層含有環氧化合物、無機填充材及硬化劑。In a specific aspect of the laminated film of the present invention, the insulating resin layer contains an epoxy compound, an inorganic filler and a hardener.

於本發明之積層膜之某特定態樣中,上述硬化劑含有酚化合物、氰酸酯化合物、順丁烯二醯亞胺化合物或活性酯化合物。In a specific aspect of the laminated film of the present invention, the hardener contains a phenol compound, a cyanate ester compound, a maleimide compound or an active ester compound.

於本發明之積層膜之某特定態樣中,於積層膜之與上述一端相反之另一端側中,上述基材膜及上述絕緣樹脂層之端面對齊,或者於積層膜之上述一端側及與上述一端相反之另一端側兩者,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出,且上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離。In a specific aspect of the laminated film of the present invention, the end surfaces of the base film and the insulating resin layer are aligned on the other end side of the laminated film opposite to the one end, or the end surfaces of the laminated film and the insulating resin layer are aligned with each other. The end surface of the above-mentioned base material film protrudes outward relative to the end surface of the above-mentioned insulating resin layer, and the protrusion distance of the above-mentioned base material film on the above-mentioned other end side is smaller than the above-mentioned end surface of the above-mentioned one end side. The protrusion distance of the base film.

於本發明之積層膜之某特定態樣中,上述絕緣樹脂層於60℃以上180℃以下之溫度範圍下之最低熔融黏度為5 mPa・s以上。In a specific aspect of the laminated film of the present invention, the minimum melt viscosity of the insulating resin layer in a temperature range of 60°C to 180°C is 5 mPa·s or more.

於本發明之積層膜之某特定態樣中,上述絕緣樹脂層較佳為用以於多層印刷配線板形成絕緣層。In a specific aspect of the laminated film of the present invention, the insulating resin layer is preferably used to form an insulating layer on a multilayer printed wiring board.

根據本發明之廣泛態樣,提供一種積層構造體之製造方法,其包括:積層步驟,使用上述積層膜,於積層有上述基材膜及上述絕緣樹脂層之狀態下,將上述絕緣樹脂層之與上述基材膜相反側之表面積層於表面具有金屬層之積層對象構件上;以及導通孔形成步驟,其於積層有上述基材膜及上述絕緣樹脂層之狀態下,自上述基材膜側對上述絕緣樹脂層照射雷射而形成導通孔。According to a broad aspect of the present invention, there is provided a method for manufacturing a laminated structure, which includes a lamination step of using the above-mentioned laminated film, in a state where the above-mentioned base film and the above-mentioned insulating resin layer are laminated, and the above-mentioned insulating resin layer is laminated. The surface opposite to the above-mentioned base film is laminated on the lamination target member having the metal layer on the surface; and a via hole forming step is performed from the side of the above-mentioned base film in a state where the above-mentioned base film and the above-mentioned insulating resin layer are laminated The insulating resin layer is irradiated with laser to form via holes.

於本發明之積層構造體之製造方法之某特定態樣中,其於上述積層步驟與上述導通孔形成步驟之間具備使上述絕緣樹脂層硬化之硬化步驟。 [發明之效果]In a specific aspect of the manufacturing method of the laminated structure of the present invention, a hardening step of hardening the insulating resin layer is included between the lamination step and the via hole forming step. [Effects of the invention]

本發明之積層膜具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層。於本發明之積層膜中,於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。於本發明之積層膜中,於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X為0.5以上15以下。本發明之積層膜由於具備上述構成,故而可抑制於硬化時基材膜自絕緣樹脂層自然剝離,且可抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良。The laminated film of the present invention includes a base film and an insulating resin layer laminated on the surface of the base film. In the laminated film of the present invention, on one end side of the laminated film, the end surface of the base film protrudes outward to the maximum extent relative to the end surface of the insulating resin layer. In the laminated film of the present invention, when the peeling strength of the base film with respect to the insulating resin layer is X gf/cm, and the protrusion distance of the base film on the one end side is Y mm, Y /X is above 0.5 and below 15. Since the laminated film of the present invention has the above-mentioned structure, it can suppress the base film from being naturally peeled off from the insulating resin layer during curing, and can suppress the peeling failure of the base film when peeling off the base film from the insulating resin layer after curing.

以下,對本發明詳細地進行說明。Hereinafter, the present invention will be described in detail.

本發明之積層膜具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層。The laminated film of the present invention includes a base film and an insulating resin layer laminated on the surface of the base film.

本發明之積層膜具備以下之構成(0)。The laminated film of the present invention has the following structure (0).

(0)於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。(以下,有時記為積層膜(0))(0) On one end side of the laminated film, the end surface of the base film protrudes outward to the maximum extent relative to the end surface of the insulating resin layer. (Hereinafter, sometimes referred to as laminated film (0))

於本發明之積層膜中,於所有端中,一端側之伸出距離最大。In the laminated film of the present invention, one end side has the largest protrusion distance among all ends.

於本發明之積層膜中,於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X(Y相對於X之比)為0.5以上15以下。In the laminated film of the present invention, when the peeling strength of the base film with respect to the insulating resin layer is X gf/cm, and the protrusion distance of the base film on the one end side is Y mm, Y /X (the ratio of Y to X) is 0.5 or more and 15 or less.

於本發明之積層膜中,於所有端之中,一端側之伸出距離最大,因此上述距離Y為最大程度伸出之距離。In the laminated film of the present invention, one end side has the largest protrusion distance among all ends, so the above distance Y is the maximum protrusion distance.

本發明之積層膜由於具備上述構成,故而可抑制於硬化時基材膜自絕緣樹脂層自然剝離,且可抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良。本發明之積層膜可抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之破裂。Since the laminated film of the present invention has the above-mentioned structure, it can suppress the base film from being naturally peeled off from the insulating resin layer during curing, and can suppress the peeling failure of the base film when peeling off the base film from the insulating resin layer after curing. The laminated film of the present invention can suppress cracking of the base film when the base film is peeled off from the insulating resin layer after hardening.

再者,上述硬化時及上述硬化後亦包括預硬化時及預硬化後。In addition, the above-mentioned hardening time and the above-mentioned hardening time also include the pre-hardening time and the pre-hardening time.

於本發明之積層膜中,由於基材膜之一端側伸出,故而可於硬化後自一端側自絕緣樹脂層剝離基材膜。In the laminated film of the present invention, since one end side of the base film protrudes, the base film can be peeled off from the insulating resin layer from one end side after hardening.

本發明之積層膜由於具備上述構成,故而可抑制於預硬化時基材膜自絕緣樹脂層自然剝離,且亦可抑制於預硬化後於自絕緣樹脂層剝離基材膜時基材膜之剝離不良。Since the laminated film of the present invention has the above-mentioned structure, it can suppress the natural peeling of the base film from the insulating resin layer during pre-hardening, and can also suppress the peeling of the base film when peeling off the base film from the insulating resin layer after pre-hardening. bad.

又,本發明之積層膜由於具備上述構成,故而可抑制於基板之搬送時,或用以形成導通孔之雷射照射時基材膜自絕緣樹脂層自然剝離。Furthermore, since the laminated film of the present invention has the above-mentioned structure, it can suppress the base film from being naturally peeled off from the insulating resin layer during transportation of the substrate or during laser irradiation for forming via holes.

作為上述構成(0)所包含之構成,可列舉以下之構成(1)及以下之構成(2)等。本發明之積層膜亦可具備以下之構成(1)或以下之構成(2)。本發明之積層膜可具備以下之構成(1),亦可具備以下之構成(2)。Examples of the structures included in the above-mentioned structure (0) include the following structure (1), the following structure (2), and the like. The laminated film of the present invention may also have the following configuration (1) or the following configuration (2). The laminated film of the present invention may have the following configuration (1), or may have the following configuration (2).

(1)於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。於積層膜之與上述一端相反之另一端側,上述基材膜及上述絕緣樹脂層之端面對齊。(以下,有時記為積層膜(1))(1) On one end side of the laminated film, the end surface of the base film protrudes to the outside as much as possible with respect to the end surface of the insulating resin layer. On the other end side of the laminated film opposite to the one end, the end surfaces of the base film and the insulating resin layer are aligned. (Hereinafter, sometimes referred to as laminated film (1))

(2)於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。於積層膜之與上述一端相反之另一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出。上述另一端側之上述基材膜之伸出距離與上述一端側之上述基材膜之伸出距離相等或小於上述一端側之上述基材膜伸出之距離。(以下,有時記為積層膜(2))(2) On one end side of the laminated film, the end surface of the base film protrudes to the outside as much as possible with respect to the end surface of the insulating resin layer. On the other end side of the laminated film opposite to the one end, the end surface of the base film protrudes outward relative to the end surface of the insulating resin layer. The protruding distance of the base film on the other end side is equal to or smaller than the protruding distance of the base film on the one end side. (Hereinafter, sometimes referred to as laminated film (2))

上述一端與上述另一端係指於積層膜中相對向之兩端。The above-mentioned one end and the above-mentioned other end refer to the two opposite ends in the laminated film.

於上述構成(2)中,上述另一端側之上述基材膜伸出之距離與上述一端側之上述基材膜伸出之距離相同,或者小於上述一端側之上述基材膜伸出之距離。In the above-mentioned structure (2), the protrusion distance of the above-mentioned base material film on the above-mentioned other end side is the same as the protrusion distance of the above-mentioned base material film on the above-mentioned one end side, or is smaller than the distance over which the above-mentioned base material film protrudes on the above-mentioned one end side. .

於積層膜之所有端中,於基材膜與絕緣樹脂層之端面對齊之情形時,即,先前之積層膜之情形時,於硬化時基材膜容易自絕緣樹脂層自然剝離。又,於先前之積層膜之情形時,於硬化後自絕緣樹脂層剝離基材膜時容易產生基材膜之破裂。因此,先前之積層膜係難以抑制於硬化時基材膜自絕緣樹脂層自然剝離,且難以抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之破裂。In the case where the end faces of the base film and the insulating resin layer are aligned at all ends of the laminated film, that is, in the case of the previous laminated film, the base film is easily peeled off naturally from the insulating resin layer during hardening. In addition, in the case of the previous laminated film, when the base film is peeled off from the insulating resin layer after hardening, the base film is easily cracked. Therefore, it is difficult for the conventional laminated film to suppress the natural peeling of the base film from the insulating resin layer during curing, and it is difficult to suppress the rupture of the base film when peeling off the insulating resin layer after curing.

就進一步抑制於硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,積層膜(1)與積層膜(2)中較佳為積層膜(1)。From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing and further suppressing the peeling failure of the base film when peeling off the base film from the insulating resin layer after curing, the laminated film (1) and the laminated film Among (2), the laminated film (1) is preferred.

積層膜(2)較佳為具備以下之構成(2A)。The laminated film (2) preferably has the following structure (2A).

(2A)於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出。於積層膜之與上述一端相反之另一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出。上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離。(以下,有時記為積層膜(2A))(2A) On one end side of the laminated film, the end surface of the base film protrudes to the outside as much as possible with respect to the end surface of the insulating resin layer. On the other end side of the laminated film opposite to the one end, the end surface of the base film protrudes outward relative to the end surface of the insulating resin layer. The protrusion distance of the base film on the other end side is smaller than the protrusion distance of the base film on the one end side. (Hereinafter, sometimes referred to as laminated film (2A))

於本發明之積層膜中,將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm。因此,於積層膜(2)、(2A)中,上述Y表示相對於上述絕緣樹脂層之端面,上述基材膜之端面分別向外側伸出之距離中較大之距離。In the laminated film of the present invention, let the peeling strength of the base film relative to the insulating resin layer be X gf/cm, and let the protrusion distance of the base film on the one end side be Y mm. Therefore, in the laminated films (2) and (2A), the above-mentioned Y represents the larger of the distances in which the end surfaces of the above-mentioned base film respectively project outward relative to the end surfaces of the above-mentioned insulating resin layer.

就抑制於硬化時基材膜自絕緣樹脂層自然剝離,且抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,Y/X(Y相對於X之比)為0.5以上15以下。若上述Y/X未達0.5,則於硬化時基材膜容易自絕緣樹脂層自然剝離。若上述Y/X超過15,則於硬化後自絕緣樹脂層剝離基材膜時無法將基材膜與絕緣樹脂層良好地剝離,基材膜容易破裂。Y/X (the ratio of Y to ) is above 0.5 and below 15. If the above-mentioned Y/X is less than 0.5, the base film will easily peel off naturally from the insulating resin layer during hardening. If the Y/X exceeds 15, when the base film is peeled off from the insulating resin layer after curing, the base film and the insulating resin layer cannot be peeled off satisfactorily, and the base film is easily broken.

就進一步抑制於硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,上述Y/X較佳為0.7以上,更佳為1.0以上,且較佳為13以下,更佳為11以下。From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing and further suppressing the peeling failure of the base film when peeling off the insulating resin layer after curing, the above-mentioned Y/X is preferably 0.7. or above, more preferably 1.0 or more, more preferably 13 or less, more preferably 11 or less.

就進一步抑制於硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,上述X較佳為0.3以上,且較佳為9以下。From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing and further suppressing the peeling failure of the base film when peeling off the insulating resin layer after curing, the above-mentioned X is preferably 0.3 or more. And preferably it is 9 or less.

就進一步抑制於硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良之觀點而言,上述Y較佳為0.5以上,且較佳為20以下。From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing and further suppressing the peeling failure of the base film when peeling off the insulating resin layer after curing, the above-mentioned Y is preferably 0.5 or more. And preferably it is 20 or less.

上述基材膜相對於上述絕緣樹脂層之剝離強度(即,X)較佳為0.3 gf/cm以上,更佳為0.5 gf/cm以上,且較佳為9 gf/cm以下,更佳為7 gf/cm以下。若上述剝離強度為上述下限以上,則可抑制於基板之搬送時基材膜自絕緣樹脂層自然剝離,又,即便於用於形成導通孔之雷射照射時,亦可抑制基材膜自絕緣樹脂層自然剝離。若上述剝離強度為上述上限以下,則可提高剝離強度,又,可抑制除膠渣處理後之粗糙度變高。The peel strength (i.e., below gf/cm. If the peeling strength is equal to or higher than the lower limit, the base film can be suppressed from being naturally peeled off from the insulating resin layer during transportation of the substrate, and the base film can also be suppressed from being insulated even during laser irradiation for forming via holes. The resin layer peels off naturally. If the peel strength is equal to or less than the upper limit, the peel strength can be increased, and the roughness after the desmear treatment can be suppressed from increasing.

上述基材膜相對於上述絕緣樹脂層之剝離強度可使用拉力試驗機(島津製作所公司製造之「AG-5000B」),於十字頭速度5 mm/min之條件下進行測定。The peeling strength of the base film with respect to the insulating resin layer can be measured using a tensile testing machine ("AG-5000B" manufactured by Shimadzu Corporation) at a crosshead speed of 5 mm/min.

上述一端側之上述基材膜之伸出距離(即,Y)較佳為0.5 mm以上,更佳為1 mm以上,且較佳為20 mm以下,更佳為15 mm以下。若上述一端側之上述基材膜之伸出距離為上述下限以上,則可使用自動剝離裝置於硬化後自絕緣樹脂層良好地剝離基材膜,又,於積層膜之製造時於將積層膜之一端或另一端切開時可抑制絕緣樹脂層之龜裂或破裂。若上述一端側之上述基材膜之伸出距離為上述上限以下,則可抑制於積層膜之搬送時基材膜自絕緣樹脂層自然剝離,又,可抑制製造成本。The protruding distance (ie, Y) of the base film on the one end side is preferably 0.5 mm or more, more preferably 1 mm or more, and preferably 20 mm or less, more preferably 15 mm or less. If the protruding distance of the base film on the one end side is more than the above lower limit, the base film can be well peeled off from the insulating resin layer after curing using an automatic peeling device, and the laminated film can be removed during the production of the laminated film. When one end or the other end is cut, cracking or rupture of the insulating resin layer can be suppressed. If the protruding distance of the base film on the one end side is less than the upper limit, the base film can be suppressed from being naturally peeled off from the insulating resin layer during transportation of the laminated film, and the manufacturing cost can be suppressed.

關於上述積層膜,較佳為於上述絕緣樹脂層之與上述基材膜側相反之表面上積層保護膜。Regarding the laminated film, it is preferable that a protective film is laminated on the surface of the insulating resin layer opposite to the base film side.

作為於上述積層膜(0)、(1)之一端側,相對於上述絕緣樹脂層之端面,使上述基材膜之端面向外側伸出之方法,可列舉於積層上述基材膜及上述絕緣樹脂層時錯開端面之方法。An example of a method for causing the end surface of the base film to protrude outward from the end surface of the insulating resin layer on one end side of the laminated films (0) and (1) is to laminate the base film and the insulating layer. A method of staggering the surface of the resin layer.

作為於上述積層膜(2)之一端側及與上述一端相反之另一端側兩者中,相對於上述絕緣樹脂層之端面,使上述基材膜之端面向外側伸出之方法,可列舉於積層上述基材膜及上述絕緣樹脂層時錯開端面之方法。於積層膜(2)中,對端面之錯開距離進行調整。As a method of extending the end surface of the base film to the outside with respect to the end surface of the insulating resin layer on both one end side of the laminated film (2) and the other end side opposite to the one end, there can be enumerated: A method of staggering the end faces when laminating the above-mentioned base film and the above-mentioned insulating resin layer. In the laminated film (2), adjust the staggered distance of the end faces.

作為於上述積層膜(1)之與上述一端相反之另一端側,將上述基材、上述絕緣樹脂層及上述保護膜之端面對齊之方法,可列舉以下之方法。於積層上述基材膜及上述絕緣樹脂層時將端面對齊之方法;以及將上述基材膜與上述絕緣樹脂層之積層體、或上述基材膜、上述絕緣樹脂層及上述保護膜之積層體切割成長條之方法。As a method of aligning the end surfaces of the base material, the insulating resin layer and the protective film on the other end side of the laminated film (1) opposite to the one end, the following method can be cited. A method of aligning end faces when laminating the above-mentioned base film and the above-mentioned insulating resin layer; and a laminate of the above-mentioned base film and the above-mentioned insulating resin layer, or a laminate of the above-mentioned base film, the above-mentioned insulating resin layer, and the above-mentioned protective film Method of cutting into long strips.

作為使上述積層膜(2A)之上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離的方法,可列舉以下之方法。於積層上述基材膜及上述絕緣樹脂層時,使另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離的方法。將基材膜及絕緣樹脂層中之基材膜切割成長條之方法。將基材膜、絕緣樹脂層及保護膜中之基材膜及保護膜切割成長條之方法。As a method for making the protruding distance of the substrate film on the other end side of the laminated film (2A) smaller than the protruding distance of the substrate film on the one end side, the following methods can be listed. A method for making the protruding distance of the substrate film on the other end side smaller than the protruding distance of the substrate film on the one end side when laminating the substrate film and the insulating resin layer. A method for cutting the substrate film in the substrate film and the insulating resin layer into long strips. A method for cutting the substrate film and the protective film in the substrate film, the insulating resin layer and the protective film into long strips.

本發明之積層膜之製造方法較佳為具備以下之(A)或(B)之構成。製造方法(A)、(B)為積層膜(0)之製造方法。製造方法(A)為積層膜(1)之製造方法,製造方法(B)為積層膜(2)之製造方法。積層膜(1)之製造方法較佳為具備以下之構成(A)。積層膜(2)之製造方法較佳為具備以下之構成(B)。The manufacturing method of the laminated film of this invention preferably has the following structure (A) or (B). The manufacturing methods (A) and (B) are methods of manufacturing the laminated film (0). The manufacturing method (A) is a manufacturing method of the laminated film (1), and the manufacturing method (B) is a manufacturing method of the laminated film (2). The manufacturing method of the laminated film (1) preferably has the following structure (A). The manufacturing method of the laminated film (2) preferably has the following structure (B).

(A)積層膜(1)之製造方法具備第1步驟:於基材膜之表面上以相對於絕緣樹脂層之一端側之端面,上述基材膜之端面向外側伸出之方式配置絕緣樹脂層。積層膜(1)之製造方法較佳為具備第2步驟:於上述絕緣樹脂層之與上述基材膜側相反之表面上配置保護膜。於積層膜(1)之製造方法中,獲得在與上述絕緣樹脂層之上述一端相對應之積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出之積層膜。於積層膜(1)之製造方法中,獲得於積層膜之與上述一端相反之另一端側,上述基材膜與上述絕緣樹脂層之端面對齊之積層膜(1)。(A) The manufacturing method of the laminated film (1) includes the first step of arranging insulating resin on the surface of the base film so that the end surface of the base film protrudes outward relative to the end surface of one end side of the insulating resin layer. layer. The manufacturing method of the laminated film (1) preferably includes a second step of arranging a protective film on the surface of the insulating resin layer opposite to the base film side. In the manufacturing method of the laminated film (1), on one end side of the laminated film corresponding to the one end of the insulating resin layer, the end surface of the base film protrudes outward with respect to the end surface of the insulating resin layer. Laminated film. In the manufacturing method of the laminated film (1), the laminated film (1) is obtained in which the end surfaces of the base film and the insulating resin layer are aligned on the other end side of the laminated film opposite to the one end.

(B)積層膜(2)之製造方法具備第1步驟:於基材膜之表面上以相對於絕緣樹脂層之一端側之端面,上述基材膜之端面向外側伸出之方式配置絕緣樹脂層。於該第1步驟中,較佳為於基材膜之表面上以相對於絕緣樹脂層之一端側及與上述一端相反之另一端側兩端面,上述基材膜之端面向外側伸出之方式配置絕緣樹脂層。積層膜(2)之製造方法較佳為具備第2步驟:於上述絕緣樹脂層之與上述基材膜側相反之表面上配置保護膜。於積層膜(2)之製造方法中,獲得於積層膜之一端側及與上述一端相反之另一端側兩者中,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出之積層膜(2)。於積層膜(2)之製造方法中,獲得上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離的積層膜(2)。(B) The manufacturing method of the laminated film (2) includes the first step of arranging an insulating resin on the surface of the base film in such a manner that the end surface of the base film protrudes outward relative to the end surface of one end side of the insulating resin layer. layer. In the first step, it is preferable that the end surface of the base film protrudes outward relative to one end side of the insulating resin layer and both end surfaces of the other end side opposite to the one end. Install an insulating resin layer. The manufacturing method of the laminated film (2) preferably includes a second step of arranging a protective film on the surface of the insulating resin layer opposite to the base film side. In the manufacturing method of the laminated film (2), it is obtained that the end surface of the base film protrudes outward relative to the end surface of the insulating resin layer on both one end side of the laminated film and the other end side opposite to the one end. The laminated film (2). In the manufacturing method of the laminated film (2), a laminated film (2) in which the protrusion distance of the base film on the other end side is smaller than the protrusion distance of the base film on the one end side is obtained.

本發明之積層膜之製造方法(A)較佳為進而具備第3步驟:於上述第2步驟之後,於上述絕緣樹脂層之與上述一端相反之另一端側中,將上述基材膜、上述絕緣樹脂層及上述保護膜之端面對齊。於本發明之積層膜之製造方法(A)中,亦可於上述第2步驟中,於上述絕緣樹脂層之與上述一端相反之另一端側,將上述基材膜、上述絕緣樹脂層及上述保護膜之端面對齊。The manufacturing method (A) of the laminated film of the present invention preferably further includes a third step: after the above-mentioned second step, on the other end side of the above-mentioned insulating resin layer opposite to the above-mentioned one end, the above-mentioned base film, the above-mentioned The end surfaces of the insulating resin layer and the protective film are aligned. In the manufacturing method (A) of the laminated film of the present invention, in the second step, the base film, the insulating resin layer and the insulating resin layer may be placed on the other end side of the insulating resin layer opposite to the one end. Align the ends of the protective film.

本發明之積層膜之製造方法(B)較佳為進而具備第3步驟:於上述第2步驟之後,於上述絕緣樹脂層之與上述一端相反之另一端側,使上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離。The manufacturing method (B) of the laminated film of the present invention preferably further includes a third step: after the above-mentioned second step, on the other end side of the above-mentioned insulating resin layer opposite to the above-mentioned one end, the above-mentioned base on the above-mentioned other end side is The protruding distance of the material film is smaller than the protruding distance of the base material film on the one end side.

就於積層膜(1)之另一端側使端面進一步平坦之觀點、使積層膜(2)之上述另一端側之上述基材膜之伸出距離進一步小於上述一端側之上述基材膜之伸出距離的觀點而言,較佳為以下述方式切割成長條。較佳為於上述第3步驟中將上述絕緣樹脂層切割成長條。較佳為於上述第3步驟中,將上述基材膜、上述絕緣樹脂層及上述保護膜切割成長條。From the viewpoint of further flattening the end surface of the other end side of the laminated film (1), the protrusion distance of the base film on the other end side of the laminated film (2) is further smaller than the protrusion distance of the base film on the one end side. From the perspective of distance, it is preferable to cut into long strips in the following manner. Preferably, the insulating resin layer is cut into long strips in the third step. Preferably, in the third step, the base film, the insulating resin layer and the protective film are cut into long strips.

於本發明之積層膜中,於絕緣樹脂層之表面通常積層有金屬層等被接著體(例如,基板與作為金屬之配線之積層體等)。於上述積層膜具備保護膜之情形時,於上述積層膜中,於使用絕緣樹脂層時剝離保護膜。於保護膜剝離後之上述絕緣樹脂層之表面通常積層有金屬層等被接著體(例如,基板與作為金屬之配線之積層體等)。In the laminated film of the present invention, an adherend such as a metal layer is usually laminated on the surface of the insulating resin layer (for example, a laminated body such as a substrate and metal wiring). When the above-mentioned laminated film is provided with a protective film, the protective film is peeled off when using the insulating resin layer in the above-mentioned laminated film. An adherend such as a metal layer (for example, a laminate of a substrate and metal wiring, etc.) is usually laminated on the surface of the insulating resin layer after the protective film is peeled off.

以下,參照圖式,具體地說明本發明。Hereinafter, the present invention will be described in detail with reference to the drawings.

圖1係表示本發明之第1實施形態之積層膜之剖視圖。圖1係表示上述積層膜(1)之剖視圖。FIG. 1 is a cross-sectional view showing a laminated film according to the first embodiment of the present invention. Fig. 1 is a cross-sectional view showing the above-mentioned laminated film (1).

積層膜1具有一端1a、及與一端1a相反之另一端1b。積層膜1之一端1a及另一端1b為相對向之兩側之端部。The laminated film 1 has one end 1a and the other end 1b opposite to the one end 1a. One end 1a and the other end 1b of the laminated film 1 are ends on opposite sides.

積層膜1具備基材膜2及絕緣樹脂層3。絕緣樹脂層3係積層於基材膜2之第1表面2a上。The laminated film 1 includes a base film 2 and an insulating resin layer 3 . The insulating resin layer 3 is laminated on the first surface 2a of the base film 2.

於積層膜1之連結一端1a與另一端1b之方向上,基材膜2之尺寸大於絕緣樹脂層3之尺寸。於積層膜1之連結一端1a及另一端1b之方向上,絕緣樹脂層3之尺寸小於基材膜2之尺寸。In the direction connecting one end 1 a and the other end 1 b of the laminated film 1 , the size of the base film 2 is larger than the size of the insulating resin layer 3 . The size of the insulating resin layer 3 is smaller than the size of the base film 2 in the direction connecting one end 1 a and the other end 1 b of the laminated film 1 .

於積層膜1之一端1a側,相對於絕緣樹脂層3之端面,基材膜2之端面向外側伸出。於積層膜1之一端1a,基材膜2與絕緣樹脂層3之端面不對齊。於積層膜1之一端1a側,在基材膜2之第1表面2a上存在未積層絕緣樹脂層3之部分。On one end 1a side of the laminated film 1, the end surface of the base film 2 protrudes outward relative to the end surface of the insulating resin layer 3. At one end 1a of the laminated film 1, the end surfaces of the base film 2 and the insulating resin layer 3 are not aligned. On the one end 1a side of the laminated film 1, there is a portion on the first surface 2a of the base film 2 where the insulating resin layer 3 is not laminated.

於積層膜1之一端1a側,基材膜2之伸出距離為Y mm。The protruding distance of the base film 2 on one end 1a side of the laminated film 1 is Y mm.

於積層膜1之另一端1b側,基材膜2與絕緣樹脂層3之端面對齊。On the other end 1b side of the laminated film 1, the end surfaces of the base film 2 and the insulating resin layer 3 are aligned.

圖2係表示本發明之第2實施形態之積層膜之剖視圖。圖2係表示上述積層膜(2)之剖視圖。FIG. 2 is a cross-sectional view showing a laminated film according to a second embodiment of the present invention. Fig. 2 is a cross-sectional view showing the above-mentioned laminated film (2).

積層膜1A具有一端1Aa、及與一端1Aa相反之另一端1Ab。積層膜1A之一端1Aa及另一端1Ab為相對向之兩側之端部。The laminated film 1A has one end 1Aa and the other end 1Ab opposite to the one end 1Aa. One end 1Aa and the other end 1Ab of the laminated film 1A are ends on opposite sides.

積層膜1A具備基材膜2A及絕緣樹脂層3A。絕緣樹脂層3係積層於基材膜2A之第1表面2Aa上。The laminated film 1A includes a base film 2A and an insulating resin layer 3A. The insulating resin layer 3 is laminated on the first surface 2Aa of the base film 2A.

於積層膜1A之連結一端1Aa與另一端1Ab之方向上,基材膜2A之尺寸大於絕緣樹脂層3A之尺寸。於積層膜1A之連結一端1Aa與另一端1Ab之方向上,絕緣樹脂層3A之尺寸小於基材膜2A之尺寸。In the direction connecting one end 1Aa and the other end 1Ab of the laminated film 1A, the size of the base film 2A is larger than the size of the insulating resin layer 3A. In the direction connecting one end 1Aa and the other end 1Ab of the laminated film 1A, the size of the insulating resin layer 3A is smaller than the size of the base film 2A.

於積層膜1A之一端1Aa側,相對於絕緣樹脂層3A之端面,基材膜2A之端面向外側伸出。於積層膜1A之一端1Aa,基材膜2A與絕緣樹脂層3A之端面不對齊。於積層膜1A之一端1Aa側,基材膜2A之第1之表面2Aa上存在未積層絕緣樹脂層3A之部分。On one end 1Aa side of the laminated film 1A, the end surface of the base film 2A protrudes outward relative to the end surface of the insulating resin layer 3A. At one end 1Aa of the laminated film 1A, the end surfaces of the base film 2A and the insulating resin layer 3A are not aligned. On one end 1Aa side of the laminated film 1A, there is a portion where the insulating resin layer 3A is not laminated on the first surface 2Aa of the base film 2A.

於積層膜1A之另一端1Ab側,相對於絕緣樹脂層3A之端面,基材膜2A之端面向外側伸出。於積層膜1A之另一端1Ab,基材膜2A及絕緣樹脂層3A之端面不對齊。於積層膜1A之另一端1Ab側,於基材膜2A之第1表面2Aa上存在未積層絕緣樹脂層3A之部分。On the other end 1Ab side of the laminated film 1A, the end surface of the base film 2A protrudes outward relative to the end surface of the insulating resin layer 3A. At the other end 1Ab of the laminated film 1A, the end surfaces of the base film 2A and the insulating resin layer 3A are not aligned. On the other end 1Ab side of the laminated film 1A, there is a portion where the insulating resin layer 3A is not laminated on the first surface 2Aa of the base film 2A.

積層膜1A之另一端1Ab側之基材膜2A之伸出距離小於一端1Aa側之基材膜2A之伸出距離。The protrusion distance of the base film 2A on the other end 1Ab side of the laminated film 1A is smaller than the protrusion distance of the base film 2A on the one end 1Aa side.

於積層膜1A之一端1Aa側,基材膜2A之伸出距離為Y mm。On the end 1Aa side of the laminated film 1A, the protruding distance of the base film 2A is Y mm.

上述積層膜較佳為具有MD(Machine Direction,縱向)方向、及TD(Transverse Direction,橫向)方向。MD方向係製造積層膜時之積層膜之行進方向,例如為長度方向。TD方向係與製造積層膜時之積層膜之行進方向正交之方向,且為與積層膜之厚度方向正交之方向。於上述積層膜具有MD方向及TD方向之情形時,上述TD方向為寬度方向。上述積層膜之上述一端與上述另一端較佳為積層膜之寬度方向之相對向之兩側端部。The laminated film preferably has an MD (Machine Direction) direction and a TD (Transverse Direction) direction. The MD direction is the traveling direction of the laminated film when manufacturing the laminated film, and is, for example, the longitudinal direction. The TD direction is a direction orthogonal to the traveling direction of the laminated film when manufacturing the laminated film, and is a direction orthogonal to the thickness direction of the laminated film. When the laminated film has an MD direction and a TD direction, the TD direction is the width direction. The one end and the other end of the laminated film are preferably opposite opposite ends in the width direction of the laminated film.

於本發明之積層膜之連結上述一端及上述另一端之方向上,將上述基材膜之尺寸設為W1 mm,將上述絕緣樹脂層之尺寸設為W2 mm。於本發明之積層膜中,通常W1 大於W2 。本發明之積層膜通常滿足W1 >W2In the direction connecting the one end and the other end of the laminated film of the present invention, the size of the base film is W 1 mm, and the size of the insulating resin layer is W 2 mm. In the laminated film of the present invention, W 1 is usually larger than W 2 . The laminated film of the present invention usually satisfies W 1 > W 2 .

W2 /W1 (絕緣樹脂層之尺寸相對於基材膜之尺寸之比)較佳為0.9以上,更佳為0.92以上,進而較佳為0.94以上,尤佳為0.96以上。W2 /W1 (絕緣樹脂層之尺寸相對於基材膜之尺寸之比)較佳為0.999以下,更佳為0.998以下,進而較佳為0.997以下,尤佳為0.996以下。若W2 /W1 為上述下限以上,則可使用自動剝離裝置於硬化後自絕緣樹脂層良好地剝離基材膜,又,於製造積層膜時,於將積層膜之一端或另一端切開時可抑制絕緣樹脂層之龜裂或破裂。若W2 /W1 為上述上限以下,則可抑制於積層膜之搬送時基材膜自絕緣樹脂層自然剝離,又,由於可高效率地使用基材膜,故可抑制製造成本。W 2 /W 1 (the ratio of the size of the insulating resin layer to the size of the base film) is preferably 0.9 or more, more preferably 0.92 or more, further preferably 0.94 or more, particularly preferably 0.96 or more. W 2 /W 1 (the ratio of the size of the insulating resin layer to the size of the base film) is preferably 0.999 or less, more preferably 0.998 or less, further preferably 0.997 or less, particularly preferably 0.996 or less. If W 2 /W 1 is more than the above lower limit, the base film can be well peeled off from the insulating resin layer after curing using an automatic peeling device. Also, when producing a laminated film, one end or the other end of the laminated film can be cut. Can inhibit cracking or cracking of the insulating resin layer. When W 2 /W 1 is less than the above upper limit, the base film can be suppressed from being naturally peeled off from the insulating resin layer during transportation of the laminated film, and the base film can be used efficiently, so the manufacturing cost can be suppressed.

以下,對構成本發明之積層膜之各層之細節進行說明。Hereinafter, the details of each layer constituting the laminated film of the present invention will be described.

(基材膜) 作為上述基材膜,可列舉:金屬箔、聚對苯二甲酸乙二酯膜及聚對苯二甲酸丁二酯膜等聚酯樹脂膜、聚乙烯膜及聚丙烯膜等烯烴樹脂膜、及聚醯亞胺膜等。上述基材膜之表面亦可視需要進行脫模處理。上述基材膜可為金屬箔,亦可為樹脂膜。上述基材膜較佳為樹脂膜。於使用金屬箔作為上述基材膜之情形時,上述金屬箔較佳為銅箔。(Substrate film) Examples of the base film include metal foil, polyester resin films such as polyethylene terephthalate films and polybutylene terephthalate films, olefin resin films such as polyethylene films and polypropylene films, and Polyimide film, etc. The surface of the above-mentioned base film may also be subjected to demoulding treatment if necessary. The above-mentioned base film may be a metal foil or a resin film. The above-mentioned base film is preferably a resin film. When a metal foil is used as the base film, the metal foil is preferably copper foil.

就進一步抑制剝離不良之觀點而言,上述基材膜較佳為經脫模處理。就進一步抑制伴隨聚矽氧之移動之自然剝離之觀點而言,上述脫模處理較佳為聚矽氧非移動性之脫模處理。再者,聚矽氧非移動性之脫模處理意指不含有聚矽氧之脫模處理、或以聚矽氧不會移動至上述絕緣樹脂層側之方式進行處理之脫模處理。From the viewpoint of further suppressing peeling defects, the base film is preferably subjected to a release treatment. From the viewpoint of further suppressing natural peeling accompanying the movement of polysilicone, the above-described mold release treatment is preferably a non-migration mold release treatment of polysilicone. In addition, the release treatment of polysilicone non-migration means the release treatment of not containing polysilicone, or the release treatment of processing so that polysilicone will not move to the said insulating resin layer side.

就使積層膜之操作性良好,又,使絕緣樹脂層之層壓性良好之觀點而言,上述基材膜之厚度較佳為25 μm以上,更佳為30 μm以上,且較佳為75 μm以下,更佳為50 μm以下。就進一步抑制自然剝離之觀點而言,上述基材膜之厚度較佳為75 μm以下,更佳為50 μm以下。就進一步抑制剝離不良之觀點而言,上述基材膜之厚度較佳為25 μm以上。From the viewpoint of improving the operability of the laminated film and improving the lamination properties of the insulating resin layer, the thickness of the base film is preferably 25 μm or more, more preferably 30 μm or more, and more preferably 75 μm or more. μm or less, more preferably 50 μm or less. From the viewpoint of further suppressing natural peeling, the thickness of the base film is preferably 75 μm or less, more preferably 50 μm or less. From the viewpoint of further suppressing peeling defects, the thickness of the base film is preferably 25 μm or more.

上述基材膜之上述絕緣樹脂層側之表面之算術平均粗糙度Ra較佳為5 nm以上,更佳為10 nm以上,且較佳為400 nm以下,更佳為未達400 nm,進而較佳為300 nm以下。若上述算術平均粗糙度為上述下限以上及上述上限以下,則可進一步抑制硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後自絕緣樹脂層剝離基材膜時基材膜之剝離不良。The arithmetic mean roughness Ra of the surface of the above-mentioned base film on the above-mentioned insulating resin layer side is preferably 5 nm or more, more preferably 10 nm or more, and preferably 400 nm or less, more preferably less than 400 nm, and further preferably Preferably, it is below 300 nm. If the above-mentioned arithmetic mean roughness is not less than the above-mentioned lower limit and below the above-mentioned upper limit, the natural peeling of the base film from the insulating resin layer during curing can be further suppressed, and the base film can be further suppressed from being peeled off from the insulating resin layer after curing. Poor peeling.

上述算術平均粗糙度Ra係使用非接觸型表面粗糙度計,於VSI(Vertical Scanning Interferometry,垂直掃描干涉)接觸模式下,且藉由50倍透鏡並將測定範圍設為95.6 μm×71.7 μm而測定。The above-mentioned arithmetic mean roughness Ra is measured using a non-contact surface roughness meter in VSI (Vertical Scanning Interferometry) contact mode with a 50x lens and a measurement range of 95.6 μm × 71.7 μm. .

(絕緣樹脂層) 上述絕緣樹脂層係積層於基材膜之表面上。上述絕緣樹脂層較佳為含有下述環氧化合物、下述無機填充材及下述硬化劑。(Insulating resin layer) The above-mentioned insulating resin layer is laminated on the surface of the base film. The above-described insulating resin layer preferably contains the following epoxy compound, the following inorganic filler, and the following hardener.

[環氧化合物] 上述絕緣樹脂層較佳為含有環氧化合物。作為上述環氧化合物,能夠使用先前公知之環氧化合物。上述環氧化合物係指具有至少1個環氧基之有機化合物。上述環氧化合物可僅使用1種,亦可併用2種以上。[Epoxy compound] The insulating resin layer preferably contains an epoxy compound. As the above-mentioned epoxy compound, a conventionally known epoxy compound can be used. The above-mentioned epoxy compound refers to an organic compound having at least one epoxy group. Only one type of the above-mentioned epoxy compound may be used, or two or more types may be used in combination.

作為上述環氧化合物,可列舉:雙酚A型環氧化合物、雙酚F型環氧化合物、雙酚S型環氧化合物、酚系酚醛清漆型環氧化合物、聯苯型環氧化合物、聯苯酚醛清漆型環氧化合物、聯苯酚型環氧化合物、萘型環氧化合物、茀型環氧化合物、苯酚芳烷基型環氧化合物、萘酚芳烷基型環氧化合物、二環戊二烯型環氧化合物、蒽型環氧化合物、具有金剛烷骨架之環氧化合物、具有三環癸烷骨架之環氧化合物、伸萘基醚型環氧化合物、及於骨架上具有三𠯤核之環氧化合物等。Examples of the above epoxy compounds include bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, bisphenol S type epoxy compounds, phenolic novolac type epoxy compounds, biphenyl type epoxy compounds, bisphenol type epoxy compounds, Phenol-type epoxy compounds, biphenol-type epoxy compounds, naphthalene-type epoxy compounds, quinol-type epoxy compounds, phenol aralkyl type epoxy compounds, naphthol aralkyl type epoxy compounds, dicyclopentadien Alkene type epoxy compounds, anthracene type epoxy compounds, epoxy compounds with adamantane skeleton, epoxy compounds with tricyclodecane skeleton, naphthyl ether type epoxy compounds, and those with three 𠯤 nuclei on the skeleton Epoxy compounds, etc.

就進一步提高硬化物與金屬層之接著強度之觀點而言,上述環氧化合物較佳為具有芳香族骨架,更佳為具有聯苯骨架,進而較佳為聯苯型環氧化合物。From the viewpoint of further improving the bonding strength between the hardened material and the metal layer, the epoxy compound preferably has an aromatic skeleton, more preferably has a biphenyl skeleton, and further preferably is a biphenyl-type epoxy compound.

就進一步提高硬化物與金屬層之接著強度之觀點而言,上述絕緣樹脂層100重量%中,上述環氧化合物之含量較佳為10重量%以上,更佳為20重量%以上,較佳為70重量%以下,更佳為65重量%以下,進而較佳為60重量%以下,尤佳為55重量%以下。From the viewpoint of further improving the bonding strength between the hardened material and the metal layer, the content of the epoxy compound in 100% by weight of the insulating resin layer is preferably 10% by weight or more, more preferably 20% by weight or more, and preferably 70% by weight or less, more preferably 65% by weight or less, still more preferably 60% by weight or less, particularly preferably 55% by weight or less.

上述環氧化合物之分子量更佳為1000以下。於該情形時,於將絕緣樹脂層層壓至基材膜上之情形時,可使無機填充材均一地存在。The molecular weight of the above-mentioned epoxy compound is more preferably 1,000 or less. In this case, when the insulating resin layer is laminated on the base film, the inorganic filler can be uniformly present.

關於環氧化合物之分子量及下述硬化劑之分子量,於環氧化合物或硬化劑並非聚合物之情形時、及可特定出環氧化合物或硬化劑之結構式之情形時,意指可自該結構式算出之分子量。又,於環氧化合物或硬化劑為聚合物之情形時,意指重量平均分子量。Regarding the molecular weight of the epoxy compound and the molecular weight of the following hardener, when the epoxy compound or the hardener is not a polymer, and when the structural formula of the epoxy compound or the hardener can be specified, it means that it can be derived from the molecular weight of the epoxy compound or the hardener. Molecular weight calculated from structural formula. In addition, when the epoxy compound or hardener is a polymer, it means the weight average molecular weight.

[無機填充材] 上述絕緣樹脂層較佳為含有無機填充材。藉由使用無機填充材,硬化物之由熱所致之尺寸變化變小。進而,硬化物之表面之表面粗糙度進一步變小,硬化物與金屬層之接著強度變高。[Inorganic filler] The insulating resin layer preferably contains an inorganic filler. By using inorganic fillers, the dimensional change of the hardened material due to heat is reduced. Furthermore, the surface roughness of the surface of the hardened material further becomes smaller, and the bonding strength between the hardened material and the metal layer becomes higher.

於先前之積層膜中,若絕緣樹脂層包含無機填充材,則有時於硬化時基材膜自絕緣樹脂層自然剝離,進而於硬化後將基材膜自絕緣樹脂層剝離時,無法將基材膜與絕緣樹脂層良好地剝離,基材膜容易破裂。然而,於本發明之積層膜中,即便於絕緣樹脂層包含無機填充材之情形時,亦可進一步抑制硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後將基材膜自絕緣樹脂層剝離時基材膜之剝離不良。In the conventional laminated film, if the insulating resin layer contains an inorganic filler, the base film may naturally peel off from the insulating resin layer during hardening. Furthermore, when the base film is peeled off from the insulating resin layer after hardening, the base film may not be able to be peeled off. The material film and the insulating resin layer are well peeled off, but the base film is easily broken. However, in the laminated film of the present invention, even when the insulating resin layer contains an inorganic filler, the base film can be further suppressed from being naturally peeled off from the insulating resin layer during curing, and the base film can be further suppressed from being peeled off after curing. Poor peeling of the base film when the insulating resin layer peels off.

作為上述無機填充材,可列舉:二氧化矽、滑石、黏土、雲母、水滑石、氧化鋁、氧化鎂、氫氧化鋁、氮化鋁及氮化硼等。Examples of the inorganic filler include silica, talc, clay, mica, hydrotalcite, alumina, magnesium oxide, aluminum hydroxide, aluminum nitride, boron nitride, and the like.

就減小硬化物之表面之表面粗糙度,進一步提高硬化物與金屬層之接著強度,且於硬化物之表面形成進一步微細之配線,且向硬化物賦予更良好之絕緣可靠性之觀點而言,上述無機填充材較佳為二氧化矽或氧化鋁,更佳為二氧化矽,進而較佳為熔融二氧化矽。藉由使用二氧化矽,硬化物之熱膨脹率進一步變低,且硬化物之表面之表面粗糙度有效地變小,硬化物與金屬層之接著強度有效地變高。二氧化矽之形狀較佳為球狀。From the perspective of reducing the surface roughness of the surface of the hardened object, further improving the bonding strength between the hardened object and the metal layer, forming further finer wiring on the surface of the hardened object, and imparting better insulation reliability to the hardened object. , the above-mentioned inorganic filler is preferably silica or alumina, more preferably silica, and further preferably fused silica. By using silica, the thermal expansion coefficient of the hardened material is further reduced, the surface roughness of the surface of the hardened material is effectively reduced, and the bonding strength between the hardened material and the metal layer is effectively increased. The shape of silicon dioxide is preferably spherical.

就不依靠硬化環境而使樹脂之硬化進行,有效地提高硬化物之玻璃轉移溫度,有效地減小硬化物之熱線膨脹係數之觀點而言,上述無機填充材較佳為球狀二氧化矽。From the viewpoint of hardening the resin without relying on the hardening environment, effectively increasing the glass transition temperature of the hardened material, and effectively reducing the thermal expansion coefficient of the hardened material, the above-mentioned inorganic filler is preferably spherical silica.

上述無機填充材之平均粒徑較佳為10 nm以上,更佳為50 nm以上,進而較佳為100 nm以上,且較佳為5 μm以下,更佳為3 μm以下,進而較佳為1 μm以下,尤佳為0.5 μm以下。若上述無機填充材之平均粒徑為上述下限以上及上述上限以下,則硬化物與金屬層之接著強度進一步變高。The average particle diameter of the above-mentioned inorganic filler is preferably 10 nm or more, more preferably 50 nm or more, further preferably 100 nm or more, and preferably 5 μm or less, more preferably 3 μm or less, and further preferably 1 μm or less, preferably 0.5 μm or less. If the average particle diameter of the inorganic filler is equal to or greater than the aforementioned lower limit and equal to or less than the aforementioned upper limit, the bonding strength between the cured material and the metal layer becomes higher.

作為上述無機填充材之平均粒徑,採用成為50%之中值徑(d50)之值。上述平均粒徑能夠使用雷射繞射散射方式之粒度分佈測定裝置進行測定。於上述絕緣樹脂層包含2種以上之無機填充材之情形時,上述無機填充材之平均粒徑係以上述絕緣樹脂層所包含之無機填充材整體來進行測定。亦可使用為了獲得上述絕緣樹脂層所使用之樹脂組合物或無機填充材而測定無機填充材之平均粒徑。As the average particle diameter of the above-mentioned inorganic filler, a value that becomes the 50% median diameter (d50) is used. The above average particle diameter can be measured using a laser diffraction scattering particle size distribution measuring device. When the insulating resin layer contains two or more types of inorganic fillers, the average particle size of the inorganic fillers is measured based on the entire inorganic filler included in the insulating resin layer. The average particle diameter of the inorganic filler can also be measured using the resin composition or inorganic filler used to obtain the insulating resin layer.

上述無機填充材較佳為球狀,更佳為球狀二氧化矽。於該情形時,硬化物之表面之表面粗糙度有效地變小,進而硬化物與金屬層之接著強度有效地變高。於上述無機填充材為球狀之情形時,上述無機填充材之縱橫比較佳為2以下,更佳為1.5以下。The above-mentioned inorganic filler is preferably spherical, more preferably spherical silica. In this case, the surface roughness of the surface of the hardened object is effectively reduced, and the bonding strength between the hardened object and the metal layer is effectively increased. When the inorganic filler is spherical, the aspect ratio of the inorganic filler is preferably 2 or less, more preferably 1.5 or less.

上述無機填充材較佳為經表面處理,更佳為基於偶合劑之表面處理物,進而較佳為基於矽烷偶合劑之表面處理物。藉此,粗化硬化物之表面之表面粗糙度進一步變小,硬化物與金屬層之接著強度進一步變高,且可於硬化物之表面形成進一步微細之配線,且向硬化物賦予進一步良好之配線間絕緣可靠性及層間絕緣可靠性。The above-mentioned inorganic filler is preferably surface-treated, more preferably surface-treated based on a coupling agent, and even more preferably surface-treated based on a silane coupling agent. Thereby, the surface roughness of the surface of the roughened hardened object is further reduced, the bonding strength between the hardened object and the metal layer is further increased, further fine wiring can be formed on the surface of the hardened object, and further good texture is imparted to the hardened object. Insulation reliability between wiring and interlayer insulation reliability.

作為上述偶合劑,可列舉:矽烷偶合劑、鈦偶合劑及鋁偶合劑等。作為上述矽烷偶合劑,可列舉:甲基丙烯酸矽烷、丙烯酸矽烷、胺基矽烷、咪唑矽烷、乙烯基矽烷及環氧矽烷等。Examples of the coupling agent include silane coupling agents, titanium coupling agents, aluminum coupling agents, and the like. Examples of the silane coupling agent include methacrylic silane, acrylic silane, aminosilane, imidazolesilane, vinylsilane, and epoxysilane.

上述絕緣樹脂層100重量%中,上述無機填充材之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為50重量%以上,尤佳為60重量%以上,最佳為70重量%以上。上述絕緣樹脂層100重量%中,上述無機填充材之含量較佳為90重量%以下,更佳為85重量%以下,進而較佳為83重量%以下,尤佳為80重量%以下。若上述無機填充材之含量於上述下限以上及上述上限以下,則硬化物之表面之表面粗糙度進一步變小,硬化物與金屬層之接著強度進一步變高,且於硬化物之表面形成進一步微細之配線。進而,若為該無機填充材之含量,則於降低硬化物之熱膨脹率之同時,亦能夠使膠渣去除性變良好。若上述無機填充材之含量為上述下限以上,則介電損耗正切有效地變低。若上述無機填充材之含量為上述上限以下,則可進一步有效地抑制剝離保護膜時之絕緣樹脂層之破裂。In 100% by weight of the above-mentioned insulating resin layer, the content of the above-mentioned inorganic filler is preferably 30% by weight or more, more preferably 40% by weight or more, further preferably 50% by weight or more, especially 60% by weight or more, most preferably It is more than 70% by weight. In 100% by weight of the insulating resin layer, the content of the inorganic filler is preferably 90% by weight or less, more preferably 85% by weight or less, further preferably 83% by weight or less, particularly preferably 80% by weight or less. If the content of the above-mentioned inorganic filler is above the above-mentioned lower limit and below the above-mentioned upper limit, the surface roughness of the surface of the hardened object will be further reduced, the bonding strength between the hardened object and the metal layer will be further increased, and the formation on the surface of the hardened object will be further finer. of wiring. Furthermore, if the content of the inorganic filler is this, the thermal expansion coefficient of the cured material can be reduced and the slag removability can be improved. If the content of the above-mentioned inorganic filler is equal to or higher than the above-mentioned lower limit, the dielectric loss tangent becomes effectively low. If the content of the inorganic filler is below the upper limit, cracking of the insulating resin layer when the protective film is peeled off can be further effectively suppressed.

[硬化劑] 上述絕緣樹脂層較佳為包含硬化劑。上述硬化劑並無特別限定。作為上述硬化劑,能夠使用先前公知之硬化劑。上述硬化劑可僅使用1種,亦可併用2種以上。[hardener] The insulating resin layer preferably contains a hardener. The above-mentioned hardening agent is not particularly limited. As the hardening agent, a conventionally known hardening agent can be used. Only one type of the above-mentioned hardening agent may be used, or two or more types may be used in combination.

作為上述硬化劑,可列舉:氰酸酯化合物(氰酸酯硬化劑)、酚化合物(酚系硬化劑)、胺化合物(胺硬化劑)、硫醇化合物(硫醇硬化劑)、咪唑化合物、膦化合物、酸酐、雙氰胺、碳二醯亞胺化合物(碳二醯亞胺硬化劑)、順丁烯二醯亞胺化合物(順丁烯二醯亞胺硬化劑)、及活性酯化合物等。上述硬化劑較佳為具有能夠與上述環氧化合物之環氧基反應之官能基。Examples of the hardener include cyanate ester compounds (cyanate ester hardeners), phenol compounds (phenol hardeners), amine compounds (amine hardeners), thiol compounds (mercaptan hardeners), imidazole compounds, Phosphine compounds, acid anhydrides, dicyandiamide, carbodiimide compounds (carbodiimide hardener), maleimide compounds (maleimide hardener), and active ester compounds, etc. . The hardener preferably has a functional group capable of reacting with the epoxy group of the epoxy compound.

就進一步降低介電損耗正切之觀點而言,上述硬化劑較佳為含有氰酸酯化合物、酚化合物、順丁烯二醯亞胺化合物、活性酯化合物或碳二醯亞胺化合物。就進一步抑制硬化時基材膜自絕緣樹脂層自然剝離,且進一步抑制於硬化後將基材膜自絕緣樹脂層剝離時基材膜之剝離不良之觀點而言,上述硬化劑較佳為含有酚化合物、氰酸酯化合物、順丁烯二醯亞胺化合物或活性酯化合物。上述硬化劑亦可含有酚化合物、氰酸酯化合物或活性酯化合物。From the viewpoint of further reducing the dielectric loss tangent, the hardener preferably contains a cyanate ester compound, a phenol compound, a maleimide compound, an active ester compound, or a carbodiimide compound. From the viewpoint of further suppressing the natural peeling of the base film from the insulating resin layer during curing and further suppressing the peeling failure of the base film when peeling the base film from the insulating resin layer after curing, the curing agent preferably contains phenol. compounds, cyanate ester compounds, maleimide compounds or active ester compounds. The above-mentioned hardener may also contain a phenol compound, a cyanate ester compound or an active ester compound.

上述氰酸酯化合物可為氰酸酯化合物(氰酸酯硬化劑)。作為上述氰酸酯化合物,可列舉:酚醛清漆型氰酸酯樹脂、雙酚型氰酸酯樹脂、以及其等一部分經三聚化而成之預聚物等。作為上述酚醛清漆型氰酸酯樹脂,可列舉酚系酚醛清漆型氰酸酯樹脂及烷酚型氰酸酯樹脂等。作為上述雙酚型氰酸酯樹脂,可列舉:雙酚A型氰酸酯樹脂、雙酚E型氰酸酯樹脂及四甲基雙酚F型氰酸酯樹脂等。The above-mentioned cyanate ester compound may be a cyanate ester compound (cyanate ester hardener). Examples of the cyanate ester compound include novolac-type cyanate ester resin, bisphenol-type cyanate ester resin, and prepolymers obtained by trimerizing a part of these. Examples of the novolak-type cyanate ester resin include phenolic novolak-type cyanate ester resins, alkylphenol-type cyanate ester resins, and the like. Examples of the bisphenol-type cyanate ester resin include bisphenol A-type cyanate ester resin, bisphenol E-type cyanate ester resin, tetramethylbisphenol F-type cyanate ester resin, and the like.

作為上述氰酸酯化合物之市售品,可列舉:酚系酚醛清漆型氰酸酯樹脂(Lonza Japan公司製造之「PT-30」及「PT-60」)及雙酚型氰酸酯樹脂經三聚化而成之預聚物(Lonza Japan公司製造之「BA-230S」、「BA-3000S」、「BTP-1000S」及「BTP-6020S」)等。Commercially available products of the cyanate ester compound include phenolic novolak-type cyanate ester resins ("PT-30" and "PT-60" manufactured by Lonza Japan) and bisphenol-type cyanate ester resins. Trimerized prepolymers ("BA-230S", "BA-3000S", "BTP-1000S" and "BTP-6020S" manufactured by Lonza Japan), etc.

作為上述酚化合物,可列舉:酚醛清漆型酚、聯苯酚型酚、萘型酚、二環戊二烯型酚、芳烷基型酚及二環戊二烯型酚等。Examples of the phenol compound include novolak-type phenol, biphenol-type phenol, naphthalene-type phenol, dicyclopentadiene-type phenol, aralkyl-type phenol, dicyclopentadiene-type phenol, and the like.

作為上述酚化合物之市售品,可列舉:酚醛清漆型酚(DIC公司製造之「TD-2091」)、聯苯酚醛清漆型酚(明和化成公司製造之「MEH-7851」)、芳烷基型酚化合物(明和化成公司製造之「MEH-7800」)、以及具有胺基三𠯤骨架之酚(DIC公司製造之「LA1356」及「LA3018-50P」)等。Commercially available products of the above-mentioned phenolic compound include: novolak-type phenol ("TD-2091" manufactured by DIC Corporation), biphenyl novolak-type phenol ("MEH-7851" manufactured by Meiwa Kasei Co., Ltd.), aralkyl phenol compounds ("MEH-7800" manufactured by Meiwa Kasei Co., Ltd.), and phenols with an amino triskeleton skeleton ("LA1356" and "LA3018-50P" manufactured by DIC Corporation), etc.

活性酯化合物係指於結構體中含有至少1個酯鍵,且於酯鍵之兩側鍵結有芳香族環之化合物。活性酯化合物例如藉由羧酸化合物或硫羧酸化合物與羥基化合物或硫醇化合物之縮合反應所獲得。作為活性酯化合物之例,可列舉下述式(1)所表示之化合物。Active ester compounds refer to compounds that contain at least one ester bond in the structure and have aromatic rings bonded to both sides of the ester bond. The active ester compound is obtained, for example, by the condensation reaction of a carboxylic acid compound or a thiocarboxylic acid compound and a hydroxy compound or a thiol compound. Examples of active ester compounds include compounds represented by the following formula (1).

[化1] [Chemical 1]

上述式(1)中,X1及X2分別表示含有芳香族環之基。作為上述含有芳香族環之基之較佳例,可列舉:可具有取代基之苯環、及可具有取代基之萘環等。作為上述取代基,可列舉烴基。該烴基之碳數較佳為12以下,更佳為6以下,進而較佳為4以下。In the above formula (1), X1 and X2 each represent a group containing an aromatic ring. Preferable examples of the aromatic ring-containing group include a benzene ring which may have a substituent, a naphthalene ring which may have a substituent, and the like. Examples of the substituent include hydrocarbon groups. The number of carbon atoms in the hydrocarbon group is preferably 12 or less, more preferably 6 or less, still more preferably 4 or less.

作為X1及X2之組合,可列舉:可具有取代基之苯環與可具有取代基之苯環之組合、可具有取代基之苯環與可具有取代基之萘環之組合。進而作為X1及X2之組合,可列舉可具有取代基之萘環與可具有取代基之萘環之組合。Examples of combinations of X1 and Furthermore, as a combination of X1 and X2, a combination of the naphthalene ring which may have a substituent, and the naphthalene ring which may have a substituent is mentioned.

上述活性酯化合物無特別限定。作為上述活性酯化合物之市售品,可列舉:DIC公司製造之「HPC-8000-65T」、「EXB9416-70BK」、「EXB8100-65T」及「EXB-8000L-65MT」等。The above-mentioned active ester compound is not particularly limited. Examples of commercially available active ester compounds include "HPC-8000-65T", "EXB9416-70BK", "EXB8100-65T" and "EXB-8000L-65MT" manufactured by DIC Corporation.

上述碳二醯亞胺化合物具有下述式(2)所表示之結構單元。於下述式(2)中,右端部及左端部係與其他基之鍵結部位。The above carbodiimide compound has a structural unit represented by the following formula (2). In the following formula (2), the right end part and the left end part are the bonding parts with other groups.

[化2] [Chemicalization 2]

上述式(2)中,X表示伸烷基、於伸烷基上鍵結有取代基之基、伸環烷基、於伸環烷基上鍵結有取代基之基、伸芳基、或於伸芳基上鍵結有取代基之基,p表示1~5之整數。於存在複數個X之情形時,複數個X可相同,亦可不同。In the above formula (2), A group having a substituent bonded to an aryl group, and p represents an integer from 1 to 5. When there are multiple X's, the multiple X's may be the same or different.

於較佳之一個形態中,至少1個X為伸烷基、於伸烷基上鍵結有取代基之基、伸環烷基、或於伸環烷基上鍵結有取代基之基。In a preferred embodiment, at least one X is an alkylene group, a group having a substituent bonded to the alkylene group, a cycloalkylene group, or a group having a substituent bonded to the cycloalkylene group.

作為上述碳二醯亞胺化合物之市售品,可列舉:Nisshinbo Chemical公司製造之「Carbodilite V-02B」、「Carbodilite V-03」、「Carbodilite V-04K」、「Carbodilite V-07」、「Carbodilite V-09」、「Carbodilite 10M-SP」及「Carbodilite 10M-SP(改)」,以及Rhein Chemie公司製造之「Stabaxol P」、「Stabaxol P400」及「Hykasil 510」等。Commercially available products of the carbodiimide compound include "Carbodilite V-02B", "Carbodilite V-03", "Carbodilite V-04K", "Carbodilite V-07", "Carbodilite V-07" manufactured by Nisshinbo Chemical Co., Ltd. Carbodilite V-09", "Carbodilite 10M-SP" and "Carbodilite 10M-SP (modified)", as well as "Stabaxol P", "Stabaxol P400" and "Hykasil 510" manufactured by Rhein Chemie.

作為上述順丁烯二醯亞胺化合物,可使用先前公知之順丁烯二醯亞胺化合物。上述順丁烯二醯亞胺化合物可僅使用1種,亦可併用2種以上。As the above-mentioned maleimide compound, a conventionally known maleimide compound can be used. Only one type of the above-mentioned maleimide compound may be used, or two or more types may be used in combination.

上述順丁烯二醯亞胺化合物可為雙順丁烯二醯亞胺化合物。The above-mentioned maleimide compound may be a bismaleimine compound.

作為上述順丁烯二醯亞胺化合物,可列舉N-苯基順丁烯二醯亞胺及N-烷基雙順丁烯二醯亞胺等。Examples of the maleimide compound include N-phenylmaleimide, N-alkylbismaleimide, and the like.

上述順丁烯二醯亞胺化合物較佳為具有來自除二聚物二胺以外之二胺化合物或除三聚物三胺以外之三胺化合物之骨架。The maleimide compound preferably has a skeleton derived from a diamine compound other than a dimer diamine or a triamine compound other than a trimer triamine.

上述順丁烯二醯亞胺化合物可具有芳香族環,亦可不具有芳香族環。上述順丁烯二醯亞胺化合物較佳為具有芳香族環。The above-mentioned maleimide compound may or may not have an aromatic ring. The above-mentioned maleimide compound preferably has an aromatic ring.

於上述順丁烯二醯亞胺化合物中,較佳為於順丁烯二醯亞胺骨架上鍵結有氮原子與芳香族環。In the above maleimide compound, it is preferable that a nitrogen atom and an aromatic ring are bonded to the maleimine skeleton.

就進一步提高硬化物之熱尺寸穩定性之觀點而言,上述絕緣樹脂層中之除溶劑以外之成分100重量%中,上述順丁烯二醯亞胺化合物之含量較佳為0.5重量%以上,更佳為1重量%以上,且較佳為15重量%以下,更佳為10重量%以下。From the viewpoint of further improving the thermal dimensional stability of the cured product, the content of the maleimide compound is preferably 0.5% by weight or more in 100% by weight of components other than the solvent in the insulating resin layer. More preferably, it is 1 weight% or more, and more preferably, it is 15 weight% or less, More preferably, it is 10 weight% or less.

上述絕緣樹脂層中之除無機填充材及溶劑以外之成分100重量%中,上述順丁烯二醯亞胺化合物之含量較佳為2.5重量%以上,更佳為5重量%以上,進而較佳為7.5重量%以上,且較佳為50重量%以下,更佳為35重量%以下。若上述順丁烯二醯亞胺化合物之含量於上述下限以上及上述上限以下,則可進一步提高硬化物之熱尺寸穩定性。In 100% by weight of components other than inorganic fillers and solvents in the above-mentioned insulating resin layer, the content of the above-mentioned maleimide compound is preferably 2.5% by weight or more, more preferably 5% by weight or more, and still more preferably The content is 7.5% by weight or more, preferably 50% by weight or less, and more preferably 35% by weight or less. If the content of the maleimide compound is above the above lower limit and below the above upper limit, the thermal dimensional stability of the cured product can be further improved.

就有效地發揮本發明之效果之觀點而言,上述順丁烯二醯亞胺化合物之分子量較佳為500以上,更佳為1000以上,較且佳為未達30000,更佳為未達20000。From the viewpoint of effectively exerting the effects of the present invention, the molecular weight of the maleimide compound is preferably 500 or more, more preferably 1,000 or more, more preferably less than 30,000, more preferably less than 20,000. .

關於上述順丁烯二醯亞胺化合物之分子量,於上述順丁烯二醯亞胺化合物並非聚合物之情形、及可特定出上述順丁烯二醯亞胺化合物之結構式之情形時,意指可自該結構式算出之分子量。又,上述順丁烯二醯亞胺化合物之分子量於上述順丁烯二醯亞胺化合物為聚合物之情形時,表示藉由凝膠滲透層析法(GPC)所測得之以聚苯乙烯換算計之重量平均分子量。Regarding the molecular weight of the above-mentioned maleimide compound, when the above-mentioned maleimide compound is not a polymer and when the structural formula of the above-mentioned maleimide compound can be specified, it means that Refers to the molecular weight that can be calculated from the structural formula. In addition, when the above-mentioned maleimide compound is a polymer, the molecular weight of the above-mentioned maleimide compound means the molecular weight measured by gel permeation chromatography (GPC) with polystyrene. Converted to weight average molecular weight.

作為上述順丁烯二醯亞胺化合物之市售品,例如可列舉:大和化成工業公司製造之「BMI-4000」及「BMI-5100」、以及Designer Molecules Inc.公司製造之「BMI-3000」等。Examples of commercially available products of the maleimide compound include "BMI-4000" and "BMI-5100" manufactured by Yamato Chemical Industry Co., Ltd., and "BMI-3000" manufactured by Designer Molecules Inc. wait.

上述硬化劑之分子量較佳為1000以下。於該情形時,於將絕緣樹脂層層壓至基材膜上之情形時,可使無機填充材均勻地存在。The molecular weight of the above-mentioned hardener is preferably 1,000 or less. In this case, when the insulating resin layer is laminated on the base film, the inorganic filler can be uniformly present.

上述絕緣樹脂層中之除上述無機填充材以外之成分100重量%中,上述環氧化合物與上述硬化劑之合計含量較佳為75重量%以上,更佳為80重量%以上,且較佳為99重量%以下,更佳為97重量%以下。若上述環氧化合物與上述硬化劑之合計含量為上述下限以上及上述上限以下,則可獲得進一步良好之硬化物,且由於可調整熔融黏度,故而無機填充材之分散性變良好。進而可於硬化過程中防止絕緣樹脂層潤濕擴散至非意欲之區域。進而,可進一步抑制硬化物之由熱所致之尺寸變化。又,若上述環氧化合物與上述硬化劑之合計含量為上述下限以上,則有熔融黏度不會變得過低,而於硬化過程中絕緣膜變得難以過度潤濕擴散至非意欲之區域之傾向。又,若上述環氧化合物與上述硬化劑之合計含量為上述上限以下,則有對於電路基板之孔或凹凸之嵌入變得容易,進而無機填充材難以不均一地存在之傾向。In the above-mentioned insulating resin layer, the total content of the above-mentioned epoxy compound and the above-mentioned hardener is preferably 75% by weight or more, more preferably 80% by weight or more, and preferably 100% by weight of components other than the above-mentioned inorganic filler. 99% by weight or less, more preferably 97% by weight or less. If the total content of the above-mentioned epoxy compound and the above-mentioned hardening agent is not less than the above-mentioned lower limit and below the above-mentioned upper limit, a further good cured product can be obtained, and the melt viscosity can be adjusted, so the dispersibility of the inorganic filler becomes good. This can prevent the insulating resin layer from wetting and spreading to unintended areas during the curing process. Furthermore, dimensional change of the hardened material due to heat can be further suppressed. Furthermore, if the total content of the above-mentioned epoxy compound and the above-mentioned hardener is more than the above-mentioned lower limit, the melt viscosity will not become too low, and the insulating film will become difficult to excessively wet and spread to unintended areas during the curing process. tendency. Moreover, if the total content of the above-mentioned epoxy compound and the above-mentioned hardener is less than the above-mentioned upper limit, it becomes easier to fit into the holes or unevenness of the circuit board, and further, there is a tendency that the inorganic filler becomes less likely to exist non-uniformly.

上述絕緣樹脂層中之除上述無機填充材以外之成分100重量%中,上述硬化劑之含量較佳為30重量%以上,更佳為40重量%以上,且較佳為70重量%以下,更佳為60重量%以下。若上述硬化劑之含量為上述下限以上及上述上限以下,則獲得進一步良好之硬化物,介電損耗正切有效地變低。In 100% by weight of components other than the above-mentioned inorganic filler in the above-mentioned insulating resin layer, the content of the above-mentioned hardener is preferably 30% by weight or more, more preferably 40% by weight or more, and more preferably 70% by weight or less, and more Preferably, it is less than 60% by weight. If the content of the curing agent is equal to or greater than the aforementioned lower limit and equal to or less than the aforementioned upper limit, a further excellent cured product is obtained, and the dielectric loss tangent is effectively reduced.

[熱塑性樹脂] 上述絕緣樹脂層較佳為包含熱塑性樹脂。作為上述熱塑性樹脂,可列舉:聚醯亞胺樹脂、聚乙烯醇縮醛樹脂及苯氧基樹脂等。上述熱塑性樹脂可僅使用1種,亦可併用2種以上。[Thermoplastic resin] The insulating resin layer preferably contains a thermoplastic resin. Examples of the thermoplastic resin include polyimide resin, polyvinyl acetal resin, phenoxy resin, and the like. Only one type of the above-mentioned thermoplastic resin may be used, or two or more types may be used in combination.

就不依靠硬化環境而有效地降低介電損耗正切,且有效地提高金屬配線之密接性之觀點而言,上述熱塑性樹脂較佳為苯氧基樹脂。藉由使用苯氧基樹脂,可抑制絕緣樹脂層對於電路基板之孔或凹凸之嵌入性之變差及無機填充材之不均一化。又,藉由使用苯氧基樹脂,能夠調整熔融黏度,因此無機填充材之分散性變的良好,且於硬化過程中絕緣樹脂層變得難以潤濕擴散至非意欲之區域。上述苯氧基樹脂並無特別限定。作為上述苯氧基樹脂,能夠使用先前公知之苯氧基樹脂。上述苯氧基樹脂可僅使用1種,亦可併用2種以上。From the viewpoint of effectively reducing the dielectric loss tangent without relying on a hardening environment and effectively improving the adhesion of metal wiring, the above-mentioned thermoplastic resin is preferably a phenoxy resin. By using phenoxy resin, it is possible to suppress the deterioration of the insulating resin layer's ability to fit into the holes or unevenness of the circuit board and the non-uniformity of the inorganic filler. In addition, by using phenoxy resin, the melt viscosity can be adjusted, so the dispersibility of the inorganic filler becomes good, and the insulating resin layer becomes difficult to wet and spread to unintended areas during the curing process. The above-mentioned phenoxy resin is not particularly limited. As the above-mentioned phenoxy resin, a conventionally known phenoxy resin can be used. Only one type of the above-mentioned phenoxy resin may be used, or two or more types may be used in combination.

作為上述苯氧基樹脂,例如可列舉:具有雙酚A型骨架、雙酚F型之骨架、雙酚S型骨架、聯苯骨架、酚醛清漆骨架、萘骨架及醯亞胺骨架等骨架之苯氧基樹脂等。Examples of the phenoxy resin include benzene having a bisphenol A-type skeleton, a bisphenol F-type skeleton, a bisphenol S-type skeleton, a biphenyl skeleton, a novolak skeleton, a naphthalene skeleton, and an amide imine skeleton. Oxygen-based resins, etc.

作為上述苯氧基樹脂之市售品,例如可列舉:新日鐵住金化學公司製造之「YP50」、「YP55」及「YP70」;以及三菱化學公司製造之「1256B40」、「4250」、「4256H40」、「4275」、「YX6954BH30」及「YX8100BH30」等。Examples of commercially available products of the above-mentioned phenoxy resin include "YP50", "YP55" and "YP70" manufactured by Nippon Steel and Sumitomo Metal Chemical Co., Ltd.; and "1256B40", "4250" and "YP70" manufactured by Mitsubishi Chemical Corporation. 4256H40", "4275", "YX6954BH30" and "YX8100BH30" etc.

就獲得保存穩定性進一步優異之絕緣樹脂層之觀點而言,上述熱塑性樹脂之重量平均分子量較佳為5000以上,更佳為10000以上,較佳為100000以下,更佳為50000以下。From the viewpoint of obtaining an insulating resin layer with further excellent storage stability, the weight average molecular weight of the thermoplastic resin is preferably 5,000 or more, more preferably 10,000 or more, preferably 100,000 or less, and more preferably 50,000 or less.

上述熱塑性樹脂之上述重量平均分子量係表示藉由凝膠滲透層析法(GPC)所測得之以聚苯乙烯換算計之重量平均分子量。The weight average molecular weight of the thermoplastic resin represents the weight average molecular weight measured by gel permeation chromatography (GPC) in terms of polystyrene.

上述熱塑性樹脂及上述苯氧基樹脂之含量並無特別限定。絕緣樹脂層中之除上述無機填充材以外之成分100重量%中,上述熱塑性樹脂之含量(於上述熱塑性樹脂為苯氧基樹脂之情形時為苯氧基樹脂之含量)較佳為1重量%以上,更佳為5重量%以上,且較佳為30重量%以下,更佳為15重量%以下。若上述熱塑性樹脂之含量為上述下限以上及上述上限以下,則絕緣樹脂層對於電路基板之孔或凹凸之嵌入性變得良好。若上述熱塑性樹脂之含量為上述下限以上,則絕緣樹脂層之形成進一步變容易,而可獲得進一步良好之絕緣層。若上述熱塑性樹脂之含量為上述上限以下,則硬化物之熱膨脹率進一步變低。硬化物之表面之表面粗糙度進一步變小,硬化物與金屬層之接著強度進一步變高。The contents of the above-mentioned thermoplastic resin and the above-mentioned phenoxy resin are not particularly limited. In 100% by weight of components other than the above-mentioned inorganic filler in the insulating resin layer, the content of the above-mentioned thermoplastic resin (the content of the phenoxy resin when the above-mentioned thermoplastic resin is a phenoxy resin) is preferably 1% by weight. More preferably, it is 5 weight% or more, More preferably, it is 30 weight% or less, More preferably, it is 15 weight% or less. When the content of the thermoplastic resin is equal to or greater than the aforementioned lower limit and equal to or less than the aforementioned upper limit, the embedding property of the insulating resin layer into holes or unevenness of the circuit board becomes good. If the content of the thermoplastic resin is equal to or higher than the lower limit, the formation of the insulating resin layer becomes easier, and a better insulating layer can be obtained. If the content of the thermoplastic resin is equal to or less than the upper limit, the thermal expansion coefficient of the cured product will be further reduced. The surface roughness of the hardened object is further reduced, and the bonding strength between the hardened object and the metal layer is further increased.

[硬化促進劑] 上述絕緣樹脂層較佳為包含硬化促進劑。藉由使用上述硬化促進劑,硬化速度進一步變快。藉由使絕緣樹脂層迅速地硬化,硬化物中之交聯結構變得均一,並且未反應之官能基數減少,結果導致交聯密度變高。上述硬化促進劑並無特別限定,能夠使用先前公知之硬化促進劑。上述硬化促進劑可僅使用1種,亦可併用2種以上。[hardening accelerator] The insulating resin layer preferably contains a hardening accelerator. By using the above-mentioned hardening accelerator, the hardening speed is further accelerated. By rapidly hardening the insulating resin layer, the cross-linked structure in the hardened product becomes uniform, and the number of unreacted functional groups is reduced, resulting in a higher cross-link density. The above-mentioned hardening accelerator is not particularly limited, and conventionally known hardening accelerators can be used. Only one type of the above-mentioned hardening accelerator may be used, or two or more types may be used in combination.

作為上述硬化促進劑,例如可列舉:咪唑化合物、磷化合物、胺化合物及有機金屬化合物等。Examples of the hardening accelerator include imidazole compounds, phosphorus compounds, amine compounds, organic metal compounds, and the like.

作為上述咪唑化合物,可列舉:2-十一烷基咪唑、2-十七烷基咪唑、2-甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1,2-二甲基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑鎓偏苯三酸鹽、1-氰乙基-2-苯基咪唑鎓偏苯三酸鹽、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基均三𠯤、2,4-二胺基-6-[2'-十一烷基咪唑基-(1')]-乙基均三𠯤、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基均三𠯤、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基均三𠯤異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-甲基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥甲基咪唑及2-苯基-4-甲基-5-二羥甲基咪唑等。Examples of the imidazole compound include 2-undecylimidazole, 2-heptadecylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-benzene 1-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl-2-methylimidazole , 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl- 2-Undecyl imidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl -(1')]-ethyl mesosine, 2,4-diamino-6-[2'-undecyl imidazolyl-(1')]-ethyl mesosine, 2,4- Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl mesitylene, 2,4-diamino-6-[2'-methylimidazole Base-(1')]-ethyl mesostrimeric isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-methylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-dihydroxymethylimidazole, etc.

作為上述磷化合物,可列舉三苯基膦等。Examples of the phosphorus compound include triphenylphosphine.

作為上述胺化合物,可列舉:二乙基胺、三乙基胺、二伸乙基四胺、三伸乙基四胺及4,4-二甲胺基吡啶等。Examples of the amine compound include diethylamine, triethylamine, diethyltetramine, triethyltetramine, 4,4-dimethylaminopyridine, and the like.

作為上述有機金屬化合物,可列舉:環烷酸鋅、環烷酸鈷、辛酸錫、辛酸鈷、雙乙醯丙酮鈷(Ⅱ)及三乙醯丙酮鈷(Ⅲ)等。Examples of the organic metal compound include zinc naphthenate, cobalt naphthenate, tin octoate, cobalt octoate, cobalt bisacetyl acetonate (II), cobalt triacetyl acetonate (III), and the like.

上述硬化促進劑之含量並無特別限定。絕緣樹脂層中之除上述無機填充材以外之成分100重量%中,上述硬化促進劑之含量較佳為0.005重量%以上,更佳為0.01重量%以上,且較佳為5重量%以下,更佳為3重量%以下。若上述硬化促進劑之含量為上述下限以上及上述上限以下,則絕緣樹脂層有效率地硬化。若上述硬化促進劑之含量為更佳之範圍內,則絕緣樹脂層之保存穩定性進一步變高,且可獲得進一步良好之硬化物。The content of the above-mentioned hardening accelerator is not particularly limited. In 100% by weight of components other than the above-mentioned inorganic filler in the insulating resin layer, the content of the above-mentioned hardening accelerator is preferably 0.005% by weight or more, more preferably 0.01% by weight or more, and preferably 5% by weight or less, and more Preferably, it is less than 3% by weight. If the content of the above-mentioned hardening accelerator is not less than the above-mentioned lower limit and below the above-mentioned upper limit, the insulating resin layer is efficiently cured. If the content of the above-mentioned hardening accelerator is within a more optimal range, the storage stability of the insulating resin layer will be further improved, and a further good hardened product can be obtained.

[溶劑] 上述絕緣樹脂層不包含或包含溶劑。又,上述溶劑亦可為了獲得包含上述無機填充材之漿料而使用。上述溶劑可僅使用1種,亦可併用2種以上。[Solvent] The above-mentioned insulating resin layer does not contain or contains a solvent. Moreover, the said solvent can also be used in order to obtain the slurry containing the said inorganic filler. Only one type of the above solvent may be used, or two or more types may be used in combination.

作為上述溶劑,可列舉:丙酮、甲醇、乙醇、丁醇、2-丙醇、2-甲氧基乙醇、2-乙氧基乙醇、1-甲氧基-2-丙醇、2-乙醯氧基-1-甲氧基丙烷、甲苯、二甲苯、甲基乙基酮、N,N-二甲基甲醯胺、甲基異丁基酮、N-甲基-吡咯啶酮、正己烷、環己烷、環己酮及作為混合物之石腦油等。Examples of the solvent include acetone, methanol, ethanol, butanol, 2-propanol, 2-methoxyethanol, 2-ethoxyethanol, 1-methoxy-2-propanol, and 2-acetyl. Oxy-1-methoxypropane, toluene, xylene, methyl ethyl ketone, N,N-dimethylformamide, methyl isobutyl ketone, N-methyl-pyrrolidone, n-hexane , cyclohexane, cyclohexanone and naphtha as a mixture, etc.

上述溶劑大多較佳為於將上述絕緣樹脂層成形時被去除。因此,上述溶劑之沸點較佳為200℃以下,更佳為180℃以下。上述絕緣樹脂層中之上述溶劑之含量並無特別限定。上述溶劑之含量能夠適當變更至可維持上述絕緣樹脂層之層形狀之程度。Most of the above solvents are preferably removed when the above insulating resin layer is formed. Therefore, the boiling point of the above solvent is preferably 200°C or lower, more preferably 180°C or lower. The content of the solvent in the insulating resin layer is not particularly limited. The content of the above-mentioned solvent can be appropriately changed to an extent that the layer shape of the above-mentioned insulating resin layer can be maintained.

[其他成分] 以耐衝擊性、耐熱性、樹脂之相溶性及作業性等之改善為目的,於上述絕緣樹脂層中亦可添加調平劑、阻燃劑、偶合劑、著色劑、抗氧化劑、抗紫外線化劑、消泡劑、增黏劑、觸變性賦予劑及除環氧化合物以外之其他熱硬化性樹脂等。[Other ingredients] For the purpose of improving impact resistance, heat resistance, resin compatibility, workability, etc., leveling agents, flame retardants, coupling agents, colorants, antioxidants, and UV resistance can also be added to the above-mentioned insulating resin layer. agents, defoaming agents, tackifiers, thixotropic agents and other thermosetting resins other than epoxy compounds.

作為上述偶合劑,可列舉:矽烷偶合劑、鈦偶合劑及鋁偶合劑等。作為上述矽烷偶合劑,可列舉:乙烯基矽烷、胺基矽烷、咪唑矽烷及環氧矽烷等。Examples of the coupling agent include silane coupling agents, titanium coupling agents, aluminum coupling agents, and the like. Examples of the silane coupling agent include vinyl silane, amino silane, imidazole silane, epoxy silane, and the like.

作為上述其他熱硬化性樹脂,可列舉:聚苯醚樹脂、二乙烯基苄醚樹脂、聚芳酯樹脂、鄰苯二甲酸二烯丙酯樹脂、聚醯亞胺樹脂、苯并㗁𠯤樹脂、苯并㗁唑樹脂及丙烯酸酯樹脂等。Examples of the other thermosetting resins include polyphenylene ether resin, divinyl benzyl ether resin, polyarylate resin, diallyl phthalate resin, polyimide resin, benzodiazepine resin, Benzozole resin and acrylate resin, etc.

作為獲得上述絕緣樹脂層之方法,可列舉以下之方法等。擠出成形法:使用擠出機,將用以形成絕緣樹脂層之材料進行熔融混練,擠出後,藉由T型模頭或圓形模具等而成形為膜狀。流延成形法:將用以形成包含溶劑之絕緣樹脂層之材料流延而成形為膜狀。先前公知之其他膜成形法。又,亦可於基材膜上積層用以形成絕緣樹脂層之材料,進行加熱乾燥而獲得絕緣樹脂層。就能夠應對薄型化之方面而言,較佳為擠出成形法或流延成形法。膜包括片材。As a method of obtaining the above-described insulating resin layer, the following methods and the like can be cited. Extrusion molding method: Using an extruder, the material used to form the insulating resin layer is melted and kneaded. After extrusion, it is formed into a film shape using a T-shaped die or a circular die. Tape casting method: The material used to form the insulating resin layer containing the solvent is cast and formed into a film shape. Other previously known film forming methods. Alternatively, a material for forming an insulating resin layer may be laminated on a base film and heated and dried to obtain an insulating resin layer. In terms of being able to cope with thinning, the extrusion molding method or the tape casting method is preferred. Membranes include sheets.

將用以形成絕緣樹脂層之材料成形為膜狀,以利用熱之硬化不會過度進行之程度例如於50℃~150℃下加熱乾燥1分鐘~10分鐘,藉此可獲得作為B-階段膜之絕緣樹脂層。A B-stage film can be obtained by molding the material used to form the insulating resin layer into a film shape, and heating and drying it at 50°C to 150°C for 1 to 10 minutes so that hardening by heat will not proceed excessively. The insulating resin layer.

將可藉由如上述之乾燥步驟所獲得之膜狀絕緣樹脂層稱為B-階段膜。上述B-階段膜處於半硬化狀態。半硬化物未完全地硬化,能夠進一步進行硬化。The film-like insulating resin layer obtainable by the drying step as described above is called a B-stage film. The above B-stage film is in a semi-hardened state. The semi-hardened material is not completely hardened and can be further hardened.

上述絕緣樹脂層較佳為B-階段膜。The above-mentioned insulating resin layer is preferably a B-stage film.

上述絕緣樹脂層(於上述絕緣樹脂層為B-階段膜之情形時,為B-階段膜)於60℃以上180℃以下之溫度範圍下之最低熔融黏度較佳為5 mPa・s以上,較佳為10 mPa・s以上。若上述最低熔融黏度為上述下限以上,則可防止於層壓、加壓加工時樹脂滲出至非意欲之區域,可有效地抑制於硬化後剝離基材膜時之剝離不良,進而,亦可有效地抑制自然剝離。上述絕緣樹脂層(於上述絕緣樹脂層為B-階段膜之情形時,為該B-階段膜)於60℃以上180℃以下之溫度範圍下之最低熔融黏度之上限並無特別限定。上述絕緣樹脂層(於上述絕緣樹脂層為B-階段膜之情形時,為該B-階段膜)於60℃以上180℃以下之溫度範圍下之最低熔融黏度可為200 mPa・s以下,亦可為150 mPa・s以下,可為100 mPa・s以下,亦可為75 mPa・s以下。The minimum melt viscosity of the above-mentioned insulating resin layer (when the above-mentioned insulating resin layer is a B-stage film, it is a B-stage film) in a temperature range of 60°C to 180°C is preferably 5 mPa·s or more, and is preferably 5 mPa·s or more. The best value is 10 mPa·s or more. If the minimum melt viscosity is above the above lower limit, the resin can be prevented from exuding to unintended areas during lamination and pressure processing, and peeling defects when peeling off the base film after hardening can be effectively suppressed. Furthermore, it can also be effectively suppressed. Prevents natural peeling. The upper limit of the minimum melt viscosity of the above-mentioned insulating resin layer (when the above-mentioned insulating resin layer is a B-stage film, it is a B-stage film) in a temperature range of 60°C to 180°C is not particularly limited. The minimum melt viscosity of the above-mentioned insulating resin layer (when the above-mentioned insulating resin layer is a B-stage film, it is a B-stage film) in a temperature range of 60°C to 180°C may be 200 mPa·s or less. It can be 150 mPa·s or less, 100 mPa·s or less, or 75 mPa·s or less.

上述最低熔融黏度時之溫度較佳為140℃以下,更佳為130℃以下。若上述最低熔融黏度時之溫度為上述上限以下,則可有效地抑制伴隨基材膜之收縮之自然剝離。The temperature at the minimum melt viscosity is preferably 140°C or lower, more preferably 130°C or lower. If the temperature at the minimum melt viscosity is below the upper limit, natural peeling accompanying shrinkage of the base film can be effectively suppressed.

上述最低熔融黏度係使用流變儀裝置(例如,TA Instruments公司製造之「AR-2000」),於頻率6.28 rad/sec、開始溫度60℃、升溫速度5℃/min、應變21.8%之條件下測定動態黏彈性而求出。The above minimum melt viscosity is obtained using a rheometer device (for example, "AR-2000" manufactured by TA Instruments) under the conditions of frequency 6.28 rad/sec, starting temperature 60°C, heating rate 5°C/min, and strain 21.8%. It is obtained by measuring dynamic viscoelasticity.

就使絕緣樹脂層(於絕緣樹脂層為B-階段膜之情形時,為B-階段膜)之層壓性進一步良好,進一步抑制絕緣樹脂層之硬化不均之觀點而言,上述絕緣樹脂層之厚度較佳為5 μm以上,更佳為10 μm以上,且較佳為200 μm以下,更佳為100 μm以下。From the viewpoint of further improving the lamination properties of the insulating resin layer (when the insulating resin layer is a B-stage film, the B-stage film) and further suppressing uneven hardening of the insulating resin layer, the above-mentioned insulating resin layer The thickness is preferably 5 μm or more, more preferably 10 μm or more, and preferably 200 μm or less, more preferably 100 μm or less.

(保護膜) 上述積層膜較佳為於上述絕緣樹脂層之與上述基材膜側相反之表面上積層有保護膜。(protective film) The laminated film preferably has a protective film laminated on the surface of the insulating resin layer opposite to the base film side.

作為上述保護膜之材料,可列舉:聚丙烯及聚乙烯等聚烯烴、以及聚對苯二甲酸乙二酯等。上述保護膜之材料較佳為聚烯烴,更佳為聚丙烯。Examples of materials for the protective film include polyolefins such as polypropylene and polyethylene, and polyethylene terephthalate. The material of the above protective film is preferably polyolefin, more preferably polypropylene.

就使絕緣樹脂層之保護性進一步良好之觀點而言,上述保護膜之厚度較佳為5 μm以上,更佳為10 μm以上,且較佳為75 μm以下,更佳為60 μm以下。From the viewpoint of further improving the protective properties of the insulating resin layer, the thickness of the protective film is preferably 5 μm or more, more preferably 10 μm or more, and preferably 75 μm or less, more preferably 60 μm or less.

(積層膜之其他細節) 本發明之積層膜可較佳地用於在多層印刷配線板形成絕緣層。上述絕緣樹脂層可較佳地用於在多層印刷配線板形成絕緣層。藉由本發明之積層膜之絕緣樹脂層,可形成絕緣層。(Other details of the laminated film) The laminated film of the present invention can be preferably used to form an insulating layer on a multilayer printed wiring board. The above-described insulating resin layer can be preferably used to form an insulating layer on a multilayer printed wiring board. An insulating layer can be formed by the insulating resin layer of the laminated film of the present invention.

作為多層印刷配線板之一例,可列舉具備電路基板、積層於該電路基板上之複數個絕緣層、及配置於複數個上述絕緣層間之金屬層之多層印刷配線板。上述絕緣層中之至少1層由上述絕緣樹脂層所形成。與上述電路基板相接之絕緣層亦可由上述絕緣樹脂層所形成。配置於2個絕緣層間之絕緣層亦可由上述絕緣樹脂層所形成。最遠離上述電路基板之絕緣層亦可由上述絕緣樹脂層所形成。亦可於複數個上述絕緣層中遠離上述電路基板之絕緣層之外側表面上配置金屬層。An example of a multilayer printed wiring board includes a multilayer printed wiring board including a circuit board, a plurality of insulating layers laminated on the circuit board, and a metal layer arranged between the plurality of insulating layers. At least one of the insulating layers is formed of the insulating resin layer. The insulating layer in contact with the circuit substrate may also be formed of the insulating resin layer. The insulating layer disposed between two insulating layers may be formed of the above-mentioned insulating resin layer. The insulating layer farthest from the circuit substrate may also be formed of the insulating resin layer. A metal layer may also be disposed on the outer surface of the insulating layer away from the circuit substrate among the plurality of insulating layers.

(積層構造體之製造方法) 本發明之積層構造體之製造方法具備積層步驟:使用上述積層膜,於積層有上述基材膜及上述絕緣樹脂層之狀態下,將上述絕緣樹脂層之與上述基材膜相反側之表面積層於表面具有金屬層之積層對象構件上。本發明之積層構造體之製造方法具備導通孔形成步驟:於積層有上述基材膜及上述絕緣樹脂層之狀態下,自上述基材膜側向上述絕緣樹脂層照射雷射而形成導通孔。(Method for manufacturing laminated structure) The manufacturing method of the laminated structure of the present invention includes a lamination step of using the above-mentioned laminated film, in a state where the above-mentioned base film and the above-mentioned insulating resin layer are laminated, and laminating the surface of the above-mentioned insulating resin layer opposite to the above-mentioned base film. On the laminated target component with a metal layer on the surface. The manufacturing method of the laminated structure of the present invention includes a via hole forming step: in a state where the base film and the insulating resin layer are laminated, irradiating the insulating resin layer with laser from the side of the base film to form a via hole.

本發明之積層構造體之製造方法由於具備上述構成,故而於上述硬化步驟中可抑制基材膜自絕緣樹脂層自然剝離。Since the manufacturing method of the laminated structure of the present invention has the above-mentioned structure, the base film can be prevented from being naturally peeled off from the insulating resin layer in the above-mentioned hardening step.

(積層步驟) 於本發明之積層構造體之製造方法中,使用上述積層膜,於積層有上述基材膜及上述絕緣樹脂層之狀態下,將上述絕緣樹脂層之與上述基材膜相反側之表面積層於表面具有金屬層之積層對象構件上。(Layering step) In the manufacturing method of the laminated structure of the present invention, the above-mentioned laminated film is used, and in a state where the above-mentioned base film and the above-mentioned insulating resin layer are laminated, the surface of the above-mentioned insulating resin layer opposite to the above-mentioned base film is laminated. On a laminated component with a metal layer on the surface.

於上述積層步驟中,於上述積層膜具備上述保護膜之情形時,將保護膜剝離,將藉由剝離所露出之上述絕緣樹脂層之表面積層於表面具有金屬層之積層對象構件上。In the lamination step, when the laminate film has the protective film, the protective film is peeled off, and the surface of the insulating resin layer exposed by peeling is laminated on the lamination target member having the metal layer on the surface.

上述積層步驟較佳為藉由層壓進行。上述層壓時之溫度較佳為80℃以上,且較佳為120℃以下。The above-mentioned layering step is preferably performed by lamination. The temperature during lamination is preferably 80°C or higher and 120°C or lower.

(硬化步驟) 本發明之積層構造體之製造方法較佳為具備使上述絕緣樹脂層硬化之硬化步驟。(hardening step) The manufacturing method of the laminated structure of the present invention preferably includes a hardening step of hardening the insulating resin layer.

於本發明之積層構造體之製造方法中,較佳為使上述絕緣樹脂層硬化。於上述硬化步驟中,使上述絕緣樹脂層硬化而形成硬化物。上述硬化步驟中之上述絕緣樹脂層之硬化可為預硬化。上述硬化物亦包括能夠進一步硬化之預硬化物。於上述硬化步驟中,亦可使上述絕緣樹脂層預硬化而獲得B-階段膜。In the manufacturing method of the laminated structure of this invention, it is preferable to harden the said insulating resin layer. In the above-mentioned curing step, the above-mentioned insulating resin layer is cured to form a cured product. The hardening of the insulating resin layer in the above hardening step may be pre-hardening. The above-mentioned hardened materials also include pre-hardened materials that can be further hardened. In the above-mentioned hardening step, the above-mentioned insulating resin layer may also be pre-hardened to obtain a B-stage film.

上述硬化步驟較佳為藉由加熱進行。上述加熱溫度較佳為130℃以上,且較佳為200℃以下。上述加熱時間較佳為30分鐘以上,且較佳為120分鐘以下。The above-mentioned hardening step is preferably performed by heating. The above-mentioned heating temperature is preferably 130°C or higher, and preferably 200°C or lower. The above-mentioned heating time is preferably 30 minutes or more and 120 minutes or less.

為了於藉由使上述絕緣樹脂層預硬化而獲得之硬化物之表面形成微細之凹凸,較佳為對硬化物進行粗化處理。較佳為於粗化處理之前對硬化物進行膨潤處理。對於硬化物,較佳為於預硬化之後且粗化處理之前進行膨潤處理,進而於粗化處理之後進行硬化。但是,硬化物亦可不必進行膨潤處理。In order to form fine unevenness on the surface of the hardened material obtained by pre-hardening the insulating resin layer, it is preferable to perform a roughening process on the hardened material. It is preferable to subject the hardened material to swelling treatment before roughening treatment. For the hardened material, it is preferable to perform swelling treatment after preliminary hardening and before roughening treatment, and then harden it after roughening treatment. However, the hardened material does not need to be subjected to swelling treatment.

作為上述膨潤處理之方法,例如可使用如下方法:藉由以乙二醇等為主成分之化合物之水溶液或有機溶劑分散溶液等對硬化物進行處理。用於膨潤處理之膨潤液通常作為pH調整劑等包含鹼。膨潤液較佳為包含氫氧化鈉。具體而言,例如上述膨潤處理係藉由如下方式進行:使用40重量%之乙二醇水溶液等,於處理溫度30℃~85℃下對硬化物處理1分鐘~30分鐘。上述膨潤處理之溫度較佳為50℃~85℃之範圍內。若上述膨潤處理之溫度過低,則有膨潤處理需要較長時間,進而硬化物與金屬層之接著強度變低之傾向。As the above-mentioned swelling treatment method, for example, a method can be used in which the hardened material is treated with an aqueous solution of a compound containing ethylene glycol or the like as a main component or an organic solvent dispersion solution. The swelling liquid used for swelling treatment usually contains a base as a pH adjuster or the like. The swelling liquid preferably contains sodium hydroxide. Specifically, for example, the above-mentioned swelling treatment is performed by using a 40% by weight ethylene glycol aqueous solution or the like to treat the hardened material at a treatment temperature of 30°C to 85°C for 1 to 30 minutes. The temperature of the above-mentioned swelling treatment is preferably in the range of 50°C to 85°C. If the temperature of the above-mentioned swelling treatment is too low, the swelling treatment will take a long time, and the bonding strength between the hardened material and the metal layer will tend to decrease.

上述粗化處理例如可使用錳化合物、鉻化合物或過硫酸化合物等化學氧化劑等。該等化學氧化劑於添加水或有機溶劑後用作水溶液或有機溶劑分散溶液。粗化處理所使用之粗化液通常作為pH調整劑等包含鹼。粗化液較佳為包含氫氧化鈉。For the roughening treatment, chemical oxidants such as manganese compounds, chromium compounds, and persulfate compounds can be used. These chemical oxidants are used as aqueous solutions or organic solvent dispersions after adding water or organic solvents. The roughening liquid used for the roughening treatment usually contains an alkali as a pH adjuster or the like. The roughening liquid preferably contains sodium hydroxide.

作為上述錳化合物,可列舉過錳酸鉀及過錳酸鈉等。作為上述鉻化合物,可列舉重鉻酸鉀及鉻酸酐鉀等。作為上述過硫酸化合物,可列舉:過硫酸鈉、過硫酸鉀及過硫酸銨等。Examples of the manganese compound include potassium permanganate, sodium permanganate, and the like. Examples of the chromium compound include potassium dichromate, potassium chromic anhydride, and the like. Examples of the persulfate compound include sodium persulfate, potassium persulfate, ammonium persulfate, and the like.

硬化物之表面之算術平均粗糙度Ra較佳為5 nm以上,更佳為10 nm以上,且較佳為400 nm以下,更佳為未達400 nm,更佳為300 nm以下,進而較佳為未達300 nm,尤佳為未達200 nm,最佳為未達150 nm。於該情形時,硬化物與金屬層之接著強度變高,進而於絕緣層之表面形成進一步微細之配線。進而,可抑制導體損耗,而可將信號損耗抑制為較低。The arithmetic mean roughness Ra of the surface of the hardened material is preferably 5 nm or more, more preferably 10 nm or more, and more preferably 400 nm or less, more preferably less than 400 nm, more preferably 300 nm or less, and still more preferably It is less than 300 nm, preferably less than 200 nm, most preferably less than 150 nm. In this case, the bonding strength between the hardened material and the metal layer becomes higher, and further finer wiring is formed on the surface of the insulating layer. Furthermore, conductor loss can be suppressed, and signal loss can be suppressed to be low.

(導通孔形成步驟) 於本發明之積層構造體之製造方法中,於積層有上述基材膜及上述絕緣樹脂層之狀態下,自上述基材膜側向上述絕緣樹脂層照射雷射而形成導通孔。(via hole formation step) In the manufacturing method of the laminated structure of the present invention, in a state where the base film and the insulating resin layer are laminated, a laser is irradiated from the side of the base film to the insulating resin layer to form a via hole.

作為上述導通孔形成步驟所使用之雷射,可列舉CO2 雷射及UV(Ultraviolet,紫外線)雷射等。Examples of the laser used in the via hole forming step include CO 2 laser, UV (Ultraviolet, ultraviolet) laser, and the like.

就使用通用之聚對苯二甲酸乙二酯(PET)膜作為基材之觀點而言,上述雷射較佳為CO2 雷射。另一方面,於使用UV雷射作為雷射之情形時,較佳為使用聚萘二甲酸乙二酯(PEN)膜及含有紫外線吸收劑之膜等。From the viewpoint of using a general-purpose polyethylene terephthalate (PET) film as the base material, the above-mentioned laser is preferably a CO 2 laser. On the other hand, when a UV laser is used as the laser, it is preferable to use a polyethylene naphthalate (PEN) film, a film containing an ultraviolet absorber, or the like.

所形成之導通孔之直徑並無特別限定,但較佳為80 μm以下。導通孔之直徑可為10 μm以上,可為30 μm以上,亦可為60 μm以上。The diameter of the via hole formed is not particularly limited, but is preferably 80 μm or less. The diameter of the via hole may be more than 10 μm, may be more than 30 μm, or may be more than 60 μm.

(除膠渣步驟) 本發明之積層構造體之製造方法較佳為於上述導通孔形成步驟後具備藉由除膠渣處理將上述導通孔內部之膠渣去除之步驟(除膠渣步驟)。藉由具備上述除膠渣步驟,可有效地去除來自上述導通孔形成步驟中所形成之樹脂成分之樹脂之殘渣即膠渣。(Glame removal step) The manufacturing method of the multilayer structure of the present invention preferably includes a step of removing the smear inside the via hole through a desmear process (a desmearing step) after the via hole forming step. By having the above-mentioned smear removal step, the smear, which is the residue of the resin from the resin component formed in the above-mentioned via hole forming step, can be effectively removed.

於上述除膠渣步驟中例如使用錳化合物、鉻化合物或過硫酸化合物等化學氧化劑等。該等化學氧化劑係於添加水或有機溶劑後用作水溶液或有機溶劑分散溶液。除膠渣步驟所使用之除膠渣處理液通常包含鹼。除膠渣處理液較佳為包含氫氧化鈉。In the above desmearing step, chemical oxidants such as manganese compounds, chromium compounds, or persulfate compounds are used, for example. These chemical oxidants are used as aqueous solutions or organic solvent dispersions after adding water or organic solvents. The desmear treatment liquid used in the desmearing step usually contains alkali. The desmear treatment liquid preferably contains sodium hydroxide.

上述除膠渣步驟可兼作對上述絕緣樹脂層之表面進行粗化處理之粗化處理步驟。The above desmear removal step can also serve as a roughening step for roughening the surface of the insulating resin layer.

(剝離步驟) 本發明之積層構造體之製造方法較佳為於上述除膠渣步驟後具備將上述基材膜自上述絕緣樹脂層剝離之步驟(剝離步驟)。(peeling step) The manufacturing method of the laminated structure of the present invention preferably includes a step of peeling the base film from the insulating resin layer (peeling step) after the desmearing step.

上述剝離步驟較佳為使用自動剝離裝置進行。The above peeling step is preferably performed using an automatic peeling device.

於本發明之積層構造體之製造方法中,由於具備上述構成,故而於上述剝離步驟中可抑制基材膜之剝離不良。In the manufacturing method of the laminated structure of the present invention, since it has the above-mentioned structure, it is possible to suppress peeling defects of the base film in the above-mentioned peeling step.

(其他步驟) 本發明之積層構造體之製造方法較佳為具備鍍覆步驟以及正式硬化步驟之各步驟,上述鍍覆步驟係於上述剝離步驟後藉由鍍覆處理於藉由剝離所露出之絕緣樹脂層之表面形成金屬層,上述正式硬化步驟係於上述鍍覆步驟後,使絕緣樹脂層進一步硬化。(additional steps) The manufacturing method of the laminated structure of the present invention preferably includes each step of a plating step and a formal hardening step. The plating step is to perform a plating treatment on the insulating resin layer exposed by the peeling after the peeling step. A metal layer is formed on the surface, and the formal hardening step is performed after the plating step to further harden the insulating resin layer.

以下,藉由列舉實施例及比較例而具體地說明本發明。本發明並不限定於以下之實施例。Hereinafter, the present invention will be explained concretely by giving examples and comparative examples. The present invention is not limited to the following examples.

(基材膜) 基材膜A(聚對苯二甲酸乙二酯(PET)膜(LINTEC公司製造之「25X」),厚度25 μm,寬度550 mm,絕緣樹脂層側之表面之算術平均粗糙度Ra30 nm) 基材膜B(聚對苯二甲酸乙二酯(PET)膜(LINTEC公司製造之「386501」),厚度38 μm,寬度550 mm,絕緣樹脂層側之表面之算術平均粗糙度Ra30 nm) 基材膜C(聚對苯二甲酸乙二酯(PET)膜(LINTEC公司製造之「PLD386502」),厚度38 μm,寬度550 mm,絕緣樹脂層側之表面之算術平均粗糙度Ra7 nm)(Substrate film) Base film A (polyethylene terephthalate (PET) film ("25X" manufactured by LINTEC Corporation), thickness 25 μm, width 550 mm, arithmetic mean roughness of the surface on the insulating resin layer side Ra30 nm) Base film B (polyethylene terephthalate (PET) film ("386501" manufactured by LINTEC Corporation), thickness 38 μm, width 550 mm, arithmetic mean roughness of the surface on the insulating resin layer side Ra30 nm) Base film C (polyethylene terephthalate (PET) film ("PLD386502" manufactured by LINTEC Corporation), thickness 38 μm, width 550 mm, arithmetic mean roughness of the surface on the insulating resin layer side Ra7 nm)

上述算術平均粗糙度係使用非接觸型表面粗糙度計(Veeco Instruments公司製造之「WYKONT3300」),於VSI接觸模式下,藉由50倍透鏡並將測定範圍設為95.6 μm×71.7 μm而測得。再者,設為將閾值設為1%,進行中值過濾(窗口:5尺寸)、傾斜修正之條件下之上述算術平均粗糙度於隨機選擇之10處測定位置進行測定,採用測定值之平均值。The above arithmetic mean roughness was measured using a non-contact surface roughness meter ("WYKONT3300" manufactured by Veeco Instruments) in VSI contact mode with a 50x lens and a measurement range of 95.6 μm × 71.7 μm. . Furthermore, the above-mentioned arithmetic mean roughness was measured at 10 randomly selected measurement positions under the conditions of setting the threshold value to 1%, performing median filtering (window: 5 sizes), and tilt correction, and used the average of the measured values. value.

(用以形成絕緣樹脂層之材料) 以下述方式準備用以形成絕緣樹脂層之材料。(Material used to form insulating resin layer) Materials for forming the insulating resin layer are prepared in the following manner.

用以形成絕緣樹脂層A之材料: 準備乙烯基矽烷處理二氧化矽(Admatechs公司製造之「SOC2」)之環己酮漿料(固形物成分70重量%)69.3重量份。向該漿料加入聯苯型環氧化合物(日本化藥公司製造之「NC3000H」)5.6重量份、雙酚F型環氧化合物(DIC公司製造之「830S」)5.3重量份、及茀型環氧化合物(Osaka Gas Chemicals公司製造之「OGSOL PG-100」)2.0重量份。使用攪拌機,以1200 rpm攪拌60分鐘,確認到未溶解物消失。其後,加入酚系酚醛清漆硬化劑(明和化成公司製造之「H4」)1.6重量份及活性酯硬化劑(DIC公司製造之「HPC-8000-65T」)之甲苯混合溶液(固形物成分65重量%)13重量份,以1200 rpm攪拌60分鐘,確認到未溶解物消失。準備雙酚苯乙酮骨架苯氧基樹脂(三菱化學公司製造之「YX6954」)之甲基乙基酮及環己酮混合溶液(固形物成分30重量%)。進而加入該混合溶液(固形物成分30重量%)3.6重量份、2-乙基-4-甲基咪唑(四國化成工業公司製造之「2E4MZ」)0.3重量份及調平劑(楠本化成公司製造之「LS-480」)0.1重量份。以1200 rpm攪拌30分鐘,獲得用以形成絕緣樹脂層A之材料(清漆)。Materials used to form the insulating resin layer A: 69.3 parts by weight of cyclohexanone slurry (solid content 70% by weight) of vinylsilane-treated silica ("SOC2" manufactured by Admatechs) was prepared. To this slurry were added 5.6 parts by weight of a biphenyl-type epoxy compound ("NC3000H" manufactured by Nippon Kayaku Co., Ltd.), 5.3 parts by weight of a bisphenol F-type epoxy compound ("830S" manufactured by DIC Corporation), and quinoa ring Oxygen compound ("OGSOL PG-100" manufactured by Osaka Gas Chemicals Co., Ltd.) 2.0 parts by weight. Use a mixer to stir at 1200 rpm for 60 minutes and confirm that undissolved matter disappears. Thereafter, 1.6 parts by weight of a phenolic novolac hardener ("H4" manufactured by Meiwa Kasei Co., Ltd.) and a toluene mixed solution (solid content 65%) of an active ester hardener ("HPC-8000-65T" manufactured by DIC Corporation) were added Weight%) 13 parts by weight, stir at 1200 rpm for 60 minutes, and confirm that the undissolved matter disappears. A mixed solution of methyl ethyl ketone and cyclohexanone (solid content 30% by weight) of bisphenol acetophenone skeleton phenoxy resin ("YX6954" manufactured by Mitsubishi Chemical Corporation) was prepared. Furthermore, 3.6 parts by weight of this mixed solution (solid content: 30% by weight), 0.3 parts by weight of 2-ethyl-4-methylimidazole ("2E4MZ" manufactured by Shikoku Chemical Industry Co., Ltd.) and a leveling agent (Kusumoto Chemical Co., Ltd. Manufactured "LS-480") 0.1 part by weight. Stir at 1200 rpm for 30 minutes to obtain the material (varnish) used to form the insulating resin layer A.

用以形成絕緣樹脂層B之材料: 將活性酯硬化劑(DIC公司製造之「HPC-8000-65T」)變更為酚系酚醛清漆硬化劑(明和化成公司製造之「MEH7851-H」),除此以外,與用以形成絕緣樹脂層A之材料同樣地獲得用以形成絕緣樹脂層B之材料(清漆)。Materials used to form insulating resin layer B: In addition to changing the active ester hardener ("HPC-8000-65T" manufactured by DIC Corporation) to a phenolic novolac hardener ("MEH7851-H" manufactured by Meiwa Kasei Co., Ltd.), it is used to form the insulating resin layer. The material (varnish) used to form the insulating resin layer B is obtained in the same manner as the material A.

(實施例1) 於基材膜之表面上配置絕緣樹脂層之步驟: 使用模嘴塗佈機,於基材膜A上,除基材之寬度方向上之距離兩端部20 mm之範圍以外,以寬度510 mm塗佈所獲得之用以形成絕緣樹脂層A之材料(清漆)後,以平均溫度100℃乾燥3分鐘而使溶劑揮發。如此,於基材膜A上形成厚度為40 μm且寬度為510 mm之絕緣樹脂層A,獲得積層體。(Example 1) Steps for arranging an insulating resin layer on the surface of the base film: Using a die nozzle coater, apply the material used to form the insulating resin layer A on the base film A with a width of 510 mm, except for a range of 20 mm from both ends in the width direction of the base material. (varnish), it was dried at an average temperature of 100° C. for 3 minutes to evaporate the solvent. In this way, the insulating resin layer A having a thickness of 40 μm and a width of 510 mm was formed on the base film A to obtain a laminate.

使積層體之寬度方向上之一端面對齊之步驟: 於所獲得之積層體之寬度方向上之自一端部(另一端)朝向內側30 mm之位置、及自與該另一端相反之端部(一端)朝向內側18 mm之位置上,使用切條機以10 m/min之速度進行切條,將另一端側之基材膜之端面與絕緣樹脂層之端面對齊。如此,獲得於一端側,相對於絕緣樹脂層之端面,基材膜之端面所伸出之距離(Y)為2 mm之積層膜。Steps to align the end faces of the laminated body in the width direction: Use a slitting machine at a position 30 mm inward from one end (the other end) and a position 18 mm inward from the end (one end) opposite to the other end in the width direction of the obtained laminate. Cut into strips at a speed of 10 m/min, and align the end surface of the base film on the other end side with the end surface of the insulating resin layer. In this way, a laminated film was obtained in which the distance (Y) extending from the end surface of the base film to the end surface of the insulating resin layer on one end side was 2 mm.

(實施例2~16及比較例1~5) 將基材膜之種類、絕緣樹脂層之種類、於積層膜之一端側相對於絕緣樹脂層之端面,基材膜之端面所伸出之距離(Y)如表1~3所示般進行變更,除此以外,與實施例1同樣地獲得積層膜。(Examples 2 to 16 and Comparative Examples 1 to 5) The type of base film, the type of insulating resin layer, and the distance (Y) that the end surface of the base film extends from one end side of the laminated film to the end surface of the insulating resin layer are changed as shown in Tables 1 to 3. , Except for this, a laminated film was obtained in the same manner as in Example 1.

(評估) (1)基材膜相對於絕緣樹脂層之剝離強度(X) 針對所獲得之積層膜,使用拉力試驗機(島津製作所公司製造之「AG-5000B」),於十字頭速度5 mm/min之條件下進行測定,測定基材膜相對於絕緣樹脂層之剝離強度(X)。(evaluate) (1) Peeling strength of the base film relative to the insulating resin layer (X) The obtained laminated film was measured using a tensile testing machine ("AG-5000B" manufactured by Shimadzu Corporation) at a crosshead speed of 5 mm/min to measure the peel strength of the base film relative to the insulating resin layer. (X).

(2)Y/X 根據於所獲得之積層膜之一端側相對於絕緣樹脂層之端面,基材膜之端面所伸出之距離(Y)、及上述(1)中所測得之基材膜相對於絕緣樹脂層之剝離強度(X),算出Y/X。(2)Y/X Based on the distance (Y) protruding from one end side of the obtained laminated film relative to the end surface of the insulating resin layer, the end surface of the base film, and the distance (Y) measured in the above (1) between the base film and the insulating resin layer Peel strength (X), calculate Y/X.

(3)最低熔融黏度及最低熔融黏度時之溫度 自所獲得之積層膜剝離基材膜而獲得絕緣樹脂層。針對所獲得之絕緣樹脂層,使用流變儀裝置(TA Instruments公司製造之「AR-2000」),於頻率6.28 rad/sec、開始溫度60℃、升溫速度5℃/min、應變21.8%之條件下測定動態黏彈性,求出最低熔融黏度、及最低熔融黏度時之溫度。將結果示於以下。(3)The lowest melt viscosity and the temperature at which the lowest melt viscosity occurs The base film is peeled off from the obtained laminated film to obtain an insulating resin layer. For the obtained insulating resin layer, a rheometer device ("AR-2000" manufactured by TA Instruments) was used under the conditions of frequency 6.28 rad/sec, starting temperature 60°C, heating rate 5°C/min, and strain 21.8%. Measure the dynamic viscoelasticity under the conditions to find the minimum melt viscosity and the temperature at which the minimum melt viscosity occurs. The results are shown below.

絕緣樹脂層A:最低熔融黏度98 mPa・s,最低熔融黏度時之溫度137℃ 絕緣樹脂層B:最低熔融黏度50 mPa・s,最低熔融黏度時之溫度128℃Insulating resin layer A: minimum melt viscosity 98 mPa·s, temperature at minimum melt viscosity 137°C Insulating resin layer B: minimum melt viscosity 50 mPa·s, temperature at minimum melt viscosity 128°C

(4)自然剝離 積層步驟: 準備藉由蝕刻形成有內層電路之340 mm×510 mm之CCL(Copper Clad Laminate,覆銅板層壓板)基板(日立化成工業公司製造之「E679FG」)。將CCL基板之兩面浸漬於銅表面粗化劑(MEC公司製造之「Mec Etch Bond CZ-8101」)中,而對銅表面進行粗化處理。(4)Natural peeling Layering steps: A 340 mm × 510 mm CCL (Copper Clad Laminate) substrate ("E679FG" manufactured by Hitachi Chemical Industries, Ltd.) with an inner circuit formed by etching was prepared. Both sides of the CCL substrate were immersed in a copper surface roughening agent ("Mec Etch Bond CZ-8101" manufactured by MEC Corporation) to roughen the copper surface.

將所獲得之積層膜切成325 mm×502 mm,自樹脂膜側安裝於上述CCL基板之兩面,使用隔膜式真空貼合機(名機製作所公司製造之「MVLP-500」)而層壓於上述CCL基板之兩面,獲得未硬化積層樣品A。層壓係藉由如下方式進行:減壓20秒而將氣壓設為13 hPa以下,於100℃下加壓20秒,進而於100℃、壓力0.8 MPa下加壓40秒鐘。The obtained laminated film was cut into 325 mm × 502 mm, mounted on both sides of the above-mentioned CCL substrate from the resin film side, and laminated using a diaphragm-type vacuum laminating machine ("MVLP-500" manufactured by Meiki Seisakusho Co., Ltd.). Unhardened laminated sample A was obtained from both sides of the above-mentioned CCL substrate. Lamination was performed by depressurizing for 20 seconds to lower the air pressure to 13 hPa or less, pressurizing at 100°C for 20 seconds, and then pressurizing at 100°C and a pressure of 0.8 MPa for 40 seconds.

硬化步驟: 於加熱溫度180℃下對上述絕緣樹脂層加熱30分鐘,而使絕緣樹脂層預硬化。Hardening steps: The above-mentioned insulating resin layer is heated at a heating temperature of 180° C. for 30 minutes to pre-harden the insulating resin layer.

於上述硬化步驟中,藉由目視來確認基材膜是否自絕緣樹脂層產生自然剝離。In the above-mentioned hardening step, it is visually confirmed whether the base film is naturally peeled off from the insulating resin layer.

[自然剝離之評估基準] ○:未產生自然剝離 △:稍微產生自然剝離 ×:產生自然剝離[Evaluation criteria for natural peeling] ○: No natural peeling occurs △: Slightly natural peeling occurs ×: Natural peeling occurs

(5)基材膜之破裂(剝離不良) 進行上述(4)自然剝離之評估後,進行以下之步驟。(5) Crack of base film (poor peeling) After evaluating the natural peeling in (4) above, perform the following steps.

導通孔形成步驟: 於積層有基材膜與絕緣樹脂層(B-階段膜)且經預硬化之狀態下,自基材膜側對絕緣樹脂層照射CO2 雷射(Hitachi Via Mechanics公司製造之「LC-4KF212」),以導通孔之上端直徑成為60 μm之方式形成貫通基材膜及絕緣樹脂層之導通孔。再者,CO2 雷射之照射條件係設為如下。Via hole formation step: In a state where the base film and the insulating resin layer (B-stage film) are laminated and pre-cured, the insulating resin layer is irradiated with a CO 2 laser (manufactured by Hitachi Via Mechanics Co., Ltd.) from the base film side. "LC-4KF212"), a via hole is formed that penetrates the base film and the insulating resin layer so that the upper end diameter of the via hole becomes 60 μm. In addition, the irradiation conditions of CO 2 laser are set as follows.

[CO2 雷射之照射條件] 加工模式峰值(Burst) 週期0.100 ms 脈衝寬度0.018 ms 脈衝數3發 光圈3.5 mm 第二光圈28 mm 功率3.3 W[CO 2 laser irradiation conditions] Processing mode peak (Burst) period 0.100 ms pulse width 0.018 ms pulse number 3 luminous circle 3.5 mm second aperture 28 mm power 3.3 W

剝離步驟: 將上述基材膜自上述絕緣樹脂層剝離。Stripping steps: The base film is peeled from the insulating resin layer.

於上述剝離步驟中,藉由目視確認基材膜是否破裂。In the above-mentioned peeling step, whether the base film is cracked is visually confirmed.

[基材膜破裂之評估基準] ○:未產生基材膜之破裂 △:稍微產生基材膜之破裂 ×:產生基材膜之破裂[Evaluation criteria for substrate film rupture] ○: No cracking of the base film occurred △: Slight cracking of the base film occurs ×: Crack of base film occurs

將積層膜之構成、及結果示於下述之表1~3。The structure of the laminated film and the results are shown in Tables 1 to 3 below.

[表1] [Table 1]

[表2] [Table 2]

[表3] [table 3]

1‧‧‧積層膜 1A‧‧‧積層膜 1Aa‧‧‧一端 1Ab‧‧‧另一端 1a‧‧‧一端 1b‧‧‧另一端 2‧‧‧基材膜 2A‧‧‧基材膜 2Aa‧‧‧第1表面 2a‧‧‧第1表面 3‧‧‧絕緣樹脂層 3A‧‧‧絕緣樹脂層 Y‧‧‧於積層膜之一端側基材膜之伸出距離1‧‧‧Laminated film 1A‧‧‧Laminated film 1Aa‧‧‧One end 1Ab‧‧‧The other end 1a‧‧‧One end 1b‧‧‧The other end 2‧‧‧Substrate film 2A‧‧‧Substrate film 2Aa‧‧‧1st surface 2a‧‧‧Surface 1 3‧‧‧Insulating resin layer 3A‧‧‧Insulating resin layer Y‧‧‧The protruding distance of the base film from one end of the laminated film

圖1係表示本發明之第1實施形態之積層膜之剖視圖。 圖2係表示本發明之第2實施形態之積層膜之剖視圖。FIG. 1 is a cross-sectional view showing a laminated film according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing a laminated film according to a second embodiment of the present invention.

Claims (11)

一種積層膜,其具備基材膜、及積層於上述基材膜之表面上之絕緣樹脂層,且於積層膜之一端側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側最大程度地伸出,於將上述基材膜相對於上述絕緣樹脂層之剝離強度設為X gf/cm,將上述一端側之上述基材膜之伸出距離設為Y mm時,Y/X為0.5以上15以下,上述基材膜之上述絕緣樹脂層側之表面之算術平均粗糙度Ra為5nm以上且未達400nm。 A laminated film comprising a base film and an insulating resin layer laminated on the surface of the base film, and on one end side of the laminated film, the end face of the base film faces outward relative to the end face of the insulating resin layer. Maximum protrusion, when the peel strength of the above-mentioned base film with respect to the above-mentioned insulating resin layer is set to X gf/cm, and the protruding distance of the above-mentioned base film on the one end side is set to Y mm, Y/ It is 0.5 or more and 15 or less, and the arithmetic mean roughness Ra of the surface of the said base film on the said insulating resin layer side is 5 nm or more and less than 400 nm. 如請求項1之積層膜,其中上述X為0.3以上9以下。 The laminated film of Claim 1, wherein the above-mentioned X is 0.3 or more and 9 or less. 如請求項1或2之積層膜,其中上述Y為0.5以上20以下。 For example, the laminated film of claim 1 or 2, wherein the above-mentioned Y is 0.5 or more and 20 or less. 如請求項1或2之積層膜,其中上述基材膜之厚度為25μm以上。 The laminated film of claim 1 or 2, wherein the thickness of the above-mentioned base film is 25 μm or more. 如請求項1或2之積層膜,其中上述絕緣樹脂層含有環氧化合物、無機填充材及硬化劑。 The laminated film of claim 1 or 2, wherein the insulating resin layer contains an epoxy compound, an inorganic filler and a hardener. 如請求項5之積層膜,其中上述硬化劑含有酚化合物、氰酸酯化合物、順丁烯二醯亞胺化合物或活性酯化合物。 The laminated film of claim 5, wherein the hardener contains a phenol compound, a cyanate ester compound, a maleimide compound or an active ester compound. 如請求項1或2之積層膜,其中於積層膜之與上述一端相反之另一端側,上述基材膜與上述絕緣樹脂層之端面對齊,或者於積層膜之上述一端側及與上述一端相反之另一端側兩側,相對於上述絕緣樹脂層之端面,上述基材膜之端面向外側伸出,且上述另一端側之上述基材膜之伸出距離小於上述一端側之上述基材膜之伸出距離。 The laminated film of Claim 1 or 2, wherein the base film is aligned with the end surface of the insulating resin layer on the other end side of the laminated film opposite to the above-mentioned one end, or the above-mentioned one end side of the laminated film is aligned with the end surface opposite to the above-mentioned one end. On both sides of the other end side, relative to the end surface of the insulating resin layer, the end surface of the above-mentioned base material film protrudes outward, and the protrusion distance of the above-mentioned base material film on the above-mentioned other end side is smaller than the above-mentioned base material film on the one end side the extended distance. 如請求項1或2之積層膜,其中上述絕緣樹脂層之於60℃以上180℃以下之溫度範圍下之最低熔融黏度為5mPa‧s以上。 For example, the laminated film of claim 1 or 2, wherein the minimum melt viscosity of the above-mentioned insulating resin layer in the temperature range of above 60°C and below 180°C is 5mPa‧s or more. 如請求項1或2之積層膜,其中上述絕緣樹脂層係用於在多層印刷配線板形成絕緣層。 The laminated film according to claim 1 or 2, wherein the insulating resin layer is used to form an insulating layer on a multilayer printed wiring board. 一種積層構造體之製造方法,其具備:積層步驟,其使用如請求項1至9中任一項之積層膜,於積層有上述基材膜及上述絕緣樹脂層之狀態下,將上述絕緣樹脂層之與上述基材膜相反側之表面積層於表面具有金屬層之積層對象構件上;以及導通孔形成步驟,其於積層有上述基材膜及上述絕緣樹脂層之狀態下,自上述基材膜側對上述絕緣樹脂層照射雷射而形成導通孔。 A method for manufacturing a laminated structure, which includes a lamination step in which the laminated film according to any one of claims 1 to 9 is used, and in a state where the above-mentioned base film and the above-mentioned insulating resin layer are laminated, the above-mentioned insulating resin is The surface of the layer opposite to the above-mentioned base film is laminated on a lamination target member having a metal layer on the surface; and a via hole forming step is performed in a state where the above-mentioned base film and the above-mentioned insulating resin layer are laminated, from the above-mentioned base material On the film side, the insulating resin layer is irradiated with laser to form via holes. 如請求項10之積層構造體之製造方法,其於上述積層步驟與上述導通孔形成步驟之間具備使上述絕緣樹脂層硬化之硬化步驟。 The method of manufacturing a laminated structure according to claim 10, further comprising a hardening step of hardening the insulating resin layer between the lamination step and the via hole forming step.
TW108120657A 2018-06-14 2019-06-14 Method for manufacturing laminated film and laminated structure TWI834676B (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100183849A1 (en) 2007-07-09 2010-07-22 Sumitomo Bakelite Co., Ltd. Resin sheet for circuit board and production process therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100183849A1 (en) 2007-07-09 2010-07-22 Sumitomo Bakelite Co., Ltd. Resin sheet for circuit board and production process therefor

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