TW201947655A - 晶片的製造方法 - Google Patents

晶片的製造方法 Download PDF

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Publication number
TW201947655A
TW201947655A TW108116043A TW108116043A TW201947655A TW 201947655 A TW201947655 A TW 201947655A TW 108116043 A TW108116043 A TW 108116043A TW 108116043 A TW108116043 A TW 108116043A TW 201947655 A TW201947655 A TW 201947655A
Authority
TW
Taiwan
Prior art keywords
workpiece
wafer
modified layer
laser beam
laser processing
Prior art date
Application number
TW108116043A
Other languages
English (en)
Chinese (zh)
Inventor
淀良彰
趙金艶
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201947655A publication Critical patent/TW201947655A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P58/00—Singulating wafers or substrates into multiple chips, i.e. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW108116043A 2018-05-11 2019-05-09 晶片的製造方法 TW201947655A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018092366A JP7139037B2 (ja) 2018-05-11 2018-05-11 チップの製造方法
JP2018-092366 2018-05-11

Publications (1)

Publication Number Publication Date
TW201947655A true TW201947655A (zh) 2019-12-16

Family

ID=68507447

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108116043A TW201947655A (zh) 2018-05-11 2019-05-09 晶片的製造方法

Country Status (4)

Country Link
JP (1) JP7139037B2 (https=)
KR (1) KR102682695B1 (https=)
CN (1) CN110473831B (https=)
TW (1) TW201947655A (https=)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP2003088973A (ja) 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
TWI283023B (en) * 2005-12-23 2007-06-21 Advanced Semiconductor Eng Wafer level packaging process
JP5318544B2 (ja) 2008-12-01 2013-10-16 株式会社ディスコ レーザ加工装置
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP6071775B2 (ja) * 2013-06-26 2017-02-01 株式会社ディスコ ウェーハの加工方法
JP6504686B2 (ja) 2013-09-20 2019-04-24 株式会社東京精密 レーザーダイシング装置及びレーザーダイシング方法
JP2015207604A (ja) * 2014-04-17 2015-11-19 株式会社ディスコ ウェーハの加工方法
JP2015220383A (ja) * 2014-05-20 2015-12-07 株式会社ディスコ ウェーハの加工方法
JP6305853B2 (ja) * 2014-07-08 2018-04-04 株式会社ディスコ ウエーハの加工方法
JP6295154B2 (ja) 2014-07-18 2018-03-14 株式会社ディスコ ウェーハの分割方法
JP6692578B2 (ja) * 2016-06-30 2020-05-13 株式会社ディスコ ウェーハの加工方法
US20180040513A1 (en) * 2016-08-05 2018-02-08 Disco Corporation Processing method for wafer
JP6775822B2 (ja) 2016-09-28 2020-10-28 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法並びに分断装置
JP6821245B2 (ja) * 2016-10-11 2021-01-27 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
CN110473831B (zh) 2024-04-02
KR102682695B1 (ko) 2024-07-05
JP7139037B2 (ja) 2022-09-20
KR20190129737A (ko) 2019-11-20
CN110473831A (zh) 2019-11-19
JP2019197858A (ja) 2019-11-14

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