KR102682695B1 - 칩의 제조 방법 - Google Patents

칩의 제조 방법 Download PDF

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Publication number
KR102682695B1
KR102682695B1 KR1020190053777A KR20190053777A KR102682695B1 KR 102682695 B1 KR102682695 B1 KR 102682695B1 KR 1020190053777 A KR1020190053777 A KR 1020190053777A KR 20190053777 A KR20190053777 A KR 20190053777A KR 102682695 B1 KR102682695 B1 KR 102682695B1
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KR
South Korea
Prior art keywords
workpiece
modified layer
laser processing
chip
processing step
Prior art date
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Application number
KR1020190053777A
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English (en)
Korean (ko)
Other versions
KR20190129737A (ko
Inventor
요시아키 요도
진얀 자오
Original Assignee
가부시기가이샤 디스코
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Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20190129737A publication Critical patent/KR20190129737A/ko
Application granted granted Critical
Publication of KR102682695B1 publication Critical patent/KR102682695B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P58/00—Singulating wafers or substrates into multiple chips, i.e. dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H01L21/78—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H01L21/324—
    • H01L21/50—
    • H01L21/67092—
    • H01L21/67098—
    • H01L21/76—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020190053777A 2018-05-11 2019-05-08 칩의 제조 방법 Active KR102682695B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018092366A JP7139037B2 (ja) 2018-05-11 2018-05-11 チップの製造方法
JPJP-P-2018-092366 2018-05-11

Publications (2)

Publication Number Publication Date
KR20190129737A KR20190129737A (ko) 2019-11-20
KR102682695B1 true KR102682695B1 (ko) 2024-07-05

Family

ID=68507447

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190053777A Active KR102682695B1 (ko) 2018-05-11 2019-05-08 칩의 제조 방법

Country Status (4)

Country Link
JP (1) JP7139037B2 (https=)
KR (1) KR102682695B1 (https=)
CN (1) CN110473831B (https=)
TW (1) TW201947655A (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2010125521A (ja) 2008-12-01 2010-06-10 Disco Abrasive Syst Ltd レーザ加工装置
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2018022875A (ja) * 2016-08-05 2018-02-08 株式会社ディスコ ウェーハの加工方法
JP2018052770A (ja) * 2016-09-28 2018-04-05 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法並びに分断装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
TWI283023B (en) * 2005-12-23 2007-06-21 Advanced Semiconductor Eng Wafer level packaging process
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP6071775B2 (ja) * 2013-06-26 2017-02-01 株式会社ディスコ ウェーハの加工方法
JP6504686B2 (ja) 2013-09-20 2019-04-24 株式会社東京精密 レーザーダイシング装置及びレーザーダイシング方法
JP2015207604A (ja) * 2014-04-17 2015-11-19 株式会社ディスコ ウェーハの加工方法
JP2015220383A (ja) * 2014-05-20 2015-12-07 株式会社ディスコ ウェーハの加工方法
JP6305853B2 (ja) * 2014-07-08 2018-04-04 株式会社ディスコ ウエーハの加工方法
JP6295154B2 (ja) 2014-07-18 2018-03-14 株式会社ディスコ ウェーハの分割方法
JP6692578B2 (ja) * 2016-06-30 2020-05-13 株式会社ディスコ ウェーハの加工方法
JP6821245B2 (ja) * 2016-10-11 2021-01-27 株式会社ディスコ ウェーハの加工方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2010125521A (ja) 2008-12-01 2010-06-10 Disco Abrasive Syst Ltd レーザ加工装置
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2018022875A (ja) * 2016-08-05 2018-02-08 株式会社ディスコ ウェーハの加工方法
JP2018052770A (ja) * 2016-09-28 2018-04-05 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法並びに分断装置

Also Published As

Publication number Publication date
CN110473831B (zh) 2024-04-02
JP7139037B2 (ja) 2022-09-20
KR20190129737A (ko) 2019-11-20
TW201947655A (zh) 2019-12-16
CN110473831A (zh) 2019-11-19
JP2019197858A (ja) 2019-11-14

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