TW201943811A - SiC基板的研磨方法 - Google Patents
SiC基板的研磨方法Info
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- TW201943811A TW201943811A TW108111235A TW108111235A TW201943811A TW 201943811 A TW201943811 A TW 201943811A TW 108111235 A TW108111235 A TW 108111235A TW 108111235 A TW108111235 A TW 108111235A TW 201943811 A TW201943811 A TW 201943811A
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- polishing
- sic substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 83
- 238000007517 polishing process Methods 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 claims abstract description 166
- 239000007788 liquid Substances 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000002378 acidificating effect Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 239000002245 particle Substances 0.000 claims description 8
- 239000006061 abrasive grain Substances 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 73
- 229910010271 silicon carbide Inorganic materials 0.000 description 73
- 230000001681 protective effect Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 5
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- 229920005989 resin Polymers 0.000 description 4
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- 230000001070 adhesive effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- C09G1/00—Polishing compositions
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
[課題]提供一種可以將較高的研磨效率與充分的平坦性一起實現的新的SiC基板的研磨方法。
[解決手段]一種SiC基板的研磨方法,是使含有磨粒的研磨墊接觸於SiC基板來研磨SiC基板,前述SiC基板的研磨方法包含:第1研磨步驟,一邊對SiC基板與研磨墊接觸的區域供給酸性的研磨液一邊研磨SiC基板;及第2研磨步驟,在第1研磨步驟之後,在停止酸性的研磨液的供給之狀態下,一邊對此區域僅供給水一邊研磨SiC基板。
[解決手段]一種SiC基板的研磨方法,是使含有磨粒的研磨墊接觸於SiC基板來研磨SiC基板,前述SiC基板的研磨方法包含:第1研磨步驟,一邊對SiC基板與研磨墊接觸的區域供給酸性的研磨液一邊研磨SiC基板;及第2研磨步驟,在第1研磨步驟之後,在停止酸性的研磨液的供給之狀態下,一邊對此區域僅供給水一邊研磨SiC基板。
Description
發明領域
本發明是關於一種SiC基板的研磨方法。
本發明是關於一種SiC基板的研磨方法。
發明背景
在逆變器等功率電子機器中,安裝有適合於電力的控制之被稱為功率器件的半導體元件。功率器件是使用例如以相較於單晶Si(矽)等較有利於高耐壓、降低損失之單晶SiC(碳化矽)所形成的基板(以下,為SiC基板)來製造。
在逆變器等功率電子機器中,安裝有適合於電力的控制之被稱為功率器件的半導體元件。功率器件是使用例如以相較於單晶Si(矽)等較有利於高耐壓、降低損失之單晶SiC(碳化矽)所形成的基板(以下,為SiC基板)來製造。
使用SiC基板來製造功率器件時,首先是將此SiC基板的正面以CMP(化學機械研磨)等的方法來研磨,以充分地平坦化。近年來,為了提高研磨SiC基板時的效率(研磨效率),已提出有使用含有磨粒的研磨墊與具有氧化力的研磨液之研磨技術(參照例如專利文獻1)。
先前技術文獻
專利文獻
先前技術文獻
專利文獻
專利文獻1:日本專利特開2008-68390號公報
發明概要
發明欲解決之課題
然而,使用含有磨粒的研磨墊與具有氧化力的研磨液之上述的研磨技術,並不一定能夠實現適合於功率器件之製造的SiC基板的平坦性。因此,所要求的是可以將較高的研磨效率與充分的平坦性一起實現的新的SiC基板的研磨方法。
發明欲解決之課題
然而,使用含有磨粒的研磨墊與具有氧化力的研磨液之上述的研磨技術,並不一定能夠實現適合於功率器件之製造的SiC基板的平坦性。因此,所要求的是可以將較高的研磨效率與充分的平坦性一起實現的新的SiC基板的研磨方法。
本發明是有鑒於所述問題點而作成的發明,其目的在於提供可以將較高的研磨效率與充分的平坦性一起實現的新的SiC基板的研磨方法。
用以解決課題之手段
用以解決課題之手段
依據本發明之一態樣,可提供一種SiC基板的研磨方法,是使含有磨粒的研磨墊接觸於SiC基板來研磨該SiC基板,前述SiC基板的研磨方法包含:
第1研磨步驟,一邊對該SiC基板與該研磨墊接觸的區域供給酸性的研磨液一邊研磨該SiC基板;及
第2研磨步驟,在該第1研磨步驟之後,在停止該酸性的研磨液的供給之狀態下,一邊對該區域僅供給水一邊研磨該SiC基板。
發明效果
第1研磨步驟,一邊對該SiC基板與該研磨墊接觸的區域供給酸性的研磨液一邊研磨該SiC基板;及
第2研磨步驟,在該第1研磨步驟之後,在停止該酸性的研磨液的供給之狀態下,一邊對該區域僅供給水一邊研磨該SiC基板。
發明效果
本發明的一態樣之SiC基板的研磨方法包含一邊供給酸性的研磨液一邊研磨SiC基板的第1研磨步驟、以及之後在停止酸性的研磨液的供給之狀態下,一邊僅供給水一邊研磨SiC基板的第2研磨步驟。由於在第1研磨步驟中是一邊供給酸性的研磨液一邊研磨SiC基板,因此可以藉由此酸性的研磨液的作用使SiC基板變質,而實現較高的研磨效率。
又,由於在第1研磨步驟之後的第2研磨步驟中,是僅供給水而不供給酸性的研磨液,因此可以抑制SiC基板的變質,而實現充分的平坦性。像這樣,根據本發明的一態樣之SiC基板的研磨方法,可以將較高的研磨效率與充分的平坦性一起實現。
用以實施發明之形態
參照附圖,針對本發明之一個態樣的實施形態作說明。圖1是顯示在本實施形態中被研磨的SiC基板11等的構成例的立體圖。如圖1所示,SiC基板11是由單晶SiC(碳化矽)所構成之圓盤狀的晶圓,並且具有大致平坦且互相平行的第1面11a及第2面11b。
參照附圖,針對本發明之一個態樣的實施形態作說明。圖1是顯示在本實施形態中被研磨的SiC基板11等的構成例的立體圖。如圖1所示,SiC基板11是由單晶SiC(碳化矽)所構成之圓盤狀的晶圓,並且具有大致平坦且互相平行的第1面11a及第2面11b。
在本實施形態中,首先是在此SiC基板11的第2面11b側貼附保護構件21(保護構件貼附步驟)。保護構件21是例如利用樹脂等材料來形成為比SiC基板11稍大之圓形的薄膜,並且具有對SiC基板11顯現接著力之第1面21a、及與第1面21a為相反側的第2面21b。
第1面21a的接著力是藉由例如接著劑(糊)而實現。但是,於保護構件21的材質、形狀、構造等並無限制。例如,也可以使用以半導體、金屬、樹脂、或陶瓷之類的任意的材料所構成之基板等來作為保護構件21。
如圖1所示,藉由使保護構件21的第1面21a接觸於SiC基板11的第2面11b,可以在SiC基板11的第2面11b貼附保護構件21,而保護此第2面11b側。再者,在毋須保護SiC基板11的第2面11b側的情況等之下,亦可省略此保護構件貼附步驟。
在將保護構件21貼附於SiC基板11後,是對SiC基板11的第1面11a側進行研磨。圖2是示意地顯示研磨SiC基板11之情形的截面圖。如圖2所示,在本實施形態中是使用研磨裝置2來研磨SiC基板11。再者,在圖2中,是以功能方塊來表示研磨裝置2的一部分的構成要素。
研磨裝置2具備有用於保持SiC基板11的工作夾台4。工作夾台4是例如以不鏽鋼為代表的金屬材料且形成為圓盤狀,在其上部設置有具有多孔質構造之保持板6。保持板6的上表面是形成為用於吸引、保持SiC基板11的保持面6a。
保持板6的下表面側是透過設置於工作夾台4的內部之流路4a或閥(圖未示)等而連接到吸引源(圖未示)。因此,若將閥打開,即可以使吸引源的負壓作用於保持面6a。
工作夾台4是連結於馬達等的旋轉驅動源(圖未示),並且繞著相對於上述之保持面6a大致垂直的旋轉軸而旋轉。又,工作夾台4是被移動機構(圖未示)所支撐,且在相對於上述之保持面6a大致平行的方向上移動。
於工作夾台4的上方配置有用於研磨SiC基板11的研磨單元8。研磨單元8具備有相對於保持面6a成為大致垂直的旋轉軸之主軸10。此主軸10是被升降機構(圖未示)所支撐。又,在主軸10的上端側(基端側)連結有馬達等的旋轉驅動源(圖未示)。
於主軸10的下端部(前端部)固定有圓盤狀的安裝座12。在安裝座12的下表面裝設有與安裝座12大致相同大小的研磨工具14。此研磨工具14包含以金屬或樹脂等的材料形成且與安裝座12相接之圓盤狀的基台16。在基台16的下表面接著有圓盤狀的研磨墊18。研磨墊18是藉由例如在聚氨酯等的樹脂中混合鑽石或二氧化矽等的磨粒而形成。但是,對於研磨墊18的材質等並無特別的限制。
在主軸10、安裝座12、基台16、及研磨墊18各自形成有朝鉛直方向貫通之縱孔10a、12a、16a、18a。縱孔10a的下端與縱孔12a的上端是相連結,縱孔12a的下端與縱孔16a的上端是相連結,縱孔16a的下端與縱孔18a的上端是相連結。
在縱孔10a的上端是透過配管等而連接有供給控制單元20。在此供給控制單元20中進一步透過配管等而連接有第1供給源22及第2供給源24。第1供給源22是對供給控制單元20供給例如混合高錳酸鉀與氧化無機鹽而製得的酸性的研磨液,第2供給源24是對供給控制單元20供給水(代表性的是純水)。
供給控制單元20是選擇性地讓從第1供給源22及第2供給源24所供給的液體(亦即,酸性的研磨液或水)往下游側流動。藉由供給控制單元20往縱孔10a傳送的液體15(酸性的研磨液或水),會從形成於研磨墊18之縱孔18a的下端排出。
對SiC基板11的第1面11a側進行研磨時,首先是以工作夾台4保持SiC基板11(保持步驟)。具體而言,是將SiC基板11在工作夾台4上載置成使貼附於SiC基板11的保護構件21的第2面21b接觸於保持面6a。
然後,打開閥以使吸引源的負壓作用於保持面6a。藉此,就能將SiC基板11以第1面11a為朝上方露出的狀態來隔著保護構件21吸引、保持於工作夾台4上。
在以工作夾台4保持SiC基板11後,是一邊供給酸性的研磨液一邊研磨SiC基板11(第1研磨步驟)。具體而言,是一邊以供給控制單元20將從第1供給源22所供給的酸性的研磨液往下游側傳送,一邊使工作夾台4與主軸10相互地旋轉。
又,使主軸10下降,以使研磨墊18的下表面接觸於SiC基板11的第1面11a。如上述,在此,是將從第1供給源22所供給的酸性的研磨液往供給控制單元20的下游側傳送。因此,可對SiC基板11與研磨墊18接觸的區域(研磨區域)供給從研磨墊18的縱孔18a的下端排出之酸性的研磨液。
將研磨墊18相對於SiC基板11壓抵的壓力可在將SiC基板11適當地研磨的範圍內進行調整。藉此,可以一邊以酸性的研磨液對SiC基板11的第1面11a側進行改質一邊研磨。其結果,變得可得到較高的研磨效率。在本實施形態中,由於是使研磨墊18含有磨粒,因此毋須在研磨液中含有磨粒。
當經過例如預先設定之任意的時間(第1研磨時間)時,會停止對上述之研磨區域的酸性的研磨液的供給,而結束第1研磨步驟。再者,在本實施形態中,由於是繼續對SiC基板11的第1面11a側進行研磨,因此毋須停止工作夾台4與主軸10之旋轉。
在停止對研磨區域之酸性的研磨液的供給後(即第1研磨步驟之後),是在停止酸性的研磨液的供給的狀態下,一邊僅供給水一邊研磨SiC基板11(第2研磨步驟)。
亦即,是在沒有將從第1供給源22所供給的酸性的研磨液往供給控制單元20的下游側傳送的情形下,將從第2供給源24所供給的水往供給控制單元20的下游側傳送。藉此,可對研磨區域供給從研磨墊18的縱孔18a的下端排出之水。
將研磨墊18相對於SiC基板11壓抵的壓力可在將SiC基板11適當地研磨的範圍內進行調整。藉此,可以對SiC基板11的第1面11a側在幾乎沒有進行改質的情形下進行研磨。據此,可將第1面11a的平坦性充分地提高。在本實施形態中,由於是使研磨墊18含有磨粒,因此毋須在研磨液中含有磨粒。
當經過例如預先設定之任意的時間(第2研磨時間)時,第2研磨步驟即結束。再者,若此第2研磨時間過長時,研磨效率也會容易降低。據此,從充分地將研磨效率維持得較高之觀點來看,宜將第2研磨時間設在2分鐘以下,更佳是設在1分鐘以下。
當然,只要能夠以和第1研磨步驟的關係來將研磨效率充分地維持得較高即可,亦可將第2研磨時間設得比2分鐘更長。例如,在第2研磨時間為第1研磨時間的1/5以下,較佳為1/10以下的情況下,可以說即便將第2研磨時間設得比2分鐘更長,研磨效率也難以降低。
接著,針對用於確認上述實施形態之SiC基板的研磨方法的有效性而進行的實驗作說明。在此實驗中是使用下述方法來研磨SiC基板:將酸性的研磨液與水切換而使用之本實施形態的研磨方法、以及僅使用酸性的研磨液之以往的研磨方法,並對研磨量、研磨速率、及表面粗糙度(算術平均粗糙度Ra)進行比較。
下述條件在本實施形態的研磨方法與以往的研磨方法中是設為相等:工作夾台的旋轉數(500rpm)、主軸(研磨墊)的旋轉數(495rpm)、將研磨墊壓抵於SiC基板的壓力(73.5kpa)、於研磨中所使用的液體的流量(150mL/分鐘)、研磨的時間(6分鐘)等。
亦即,在本實施形態的研磨方法中,在第1研磨步驟中是以150mL/分鐘的流量來供給酸性的研磨液,在第2研磨步驟中是以150mL/分鐘的流量來供給水。又,在本實施形態的研磨方法中,是將第1研磨步驟的時間設為5分鐘,並將第2研磨步驟的時間設為1分鐘。
將此實驗的結果顯示於表1。如從表1中可清楚得知地,在本實施形態的研磨方法與以往的研磨方法中,在研磨量及研磨速率方面並無較大的差異,因而可得到較高的研磨效率。此外,相較於以往的研磨方法,在本實施形態的研磨方法中,連表面粗糙度之值也大幅提升,而可得到充分的平坦性。像這樣,藉由本實施形態的研磨方法,能夠確認到下述情形:可以將較高的研磨效率與充分的平坦性一起實現。
[表1]
如以上,本實施形態之SiC基板的研磨方法包含一邊供給酸性的研磨液一邊研磨SiC基板11之第1研磨步驟、及之後,在停止酸性的研磨液的供給的狀態下,一邊僅供給水一邊研磨SiC基板11之第2研磨步驟。
由於在第1研磨步驟中,是一邊供給酸性的研磨液一邊研磨SiC基板11,因此可以藉由此酸性的研磨液的作用使SiC基板11變質,而實現較高的研磨效率。又,由於在第1研磨步驟之後的第2研磨步驟中,是僅供給水而不供給酸性的研磨液,因此可以抑制SiC基板11的變質,而實現充分的平坦性。
再者,本發明並不因上述實施形態之記載而受到限制,並可進行各種變更而實施。例如,在上述實施形態中,雖然是在第1研磨步驟之後,連續地進行第2研磨步驟,但並非一定要在第1研磨步驟之後連續地進行第2研磨步驟。
又,在上述實施形態的第2研磨步驟中,雖然是一邊僅供給水一邊研磨SiC基板11,但此情形並非意指必定只能藉由水來研磨SiC基板11。也有例如下述情形:在第1研磨步驟中所使用且殘留於研磨墊18等之酸性的研磨液,在第2研磨步驟中只稍微對SiC基板11作用。
另外,上述實施形態之構造、方法等,只要在不脫離本發明的目的之範圍內,均可適當變更而實施。
11‧‧‧SiC基板
11a、21a‧‧‧第1面
11b、21b‧‧‧第2面
15‧‧‧液體
21‧‧‧保護構件
2‧‧‧研磨裝置
4‧‧‧工作夾台
4a‧‧‧流路
6‧‧‧保持板
6a‧‧‧保持面
8‧‧‧研磨單元
10‧‧‧主軸
10a、12a、16a、18a‧‧‧縱孔
12‧‧‧安裝座
14‧‧‧研磨工具
16‧‧‧基台
18‧‧‧研磨墊
20‧‧‧供給控制單元
22‧‧‧第1供給源
24‧‧‧第2供給源
圖1是顯示SiC基板等的構成例的立體圖。
圖2是示意地顯示研磨SiC基板之情形的截面圖。
Claims (1)
- 一種SiC基板的研磨方法,是使含有磨粒的研磨墊接觸於SiC基板來研磨該SiC基板,前述SiC基板的研磨方法的特徵在於包含: 第1研磨步驟,一邊對該SiC基板與該研磨墊接觸的區域供給酸性的研磨液一邊研磨該SiC基板;及 第2研磨步驟,在該第1研磨步驟之後,在停止該酸性的研磨液的供給之狀態下,一邊對該區域僅供給水一邊研磨該SiC基板。
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