TW201938745A - Sealable sheet providing a sealing sheet having toughness and excellent in both operability and reliability - Google Patents

Abstract

Disclosed is a sealable sheet including a sealing resin composition, inorganic particles and an operation improving component. In the sealable sheet, the content ratio of the inorganic particles is more than 50% by mass and less than 90% by mass. The operation improving component is a polymer particle. The content ratio of an operation improving component is more than 1% by mass and less than 8% by mass in the sealable sheet.

Description

Packaging sheet

The present invention relates to a packaging sheet.

Description of related technologies

Conventionally, it has been known that a packaging sheet made of a thermosetting resin sheet is used to package a semiconductor wafer and is used for manufacturing a semiconductor package.

For example, epoxy resins, phenol novolac-based hardeners, and thermosetting resin sheets (sealing sheets) containing inorganic fillers and hardening accelerators have been proposed (for example, refer to Japanese Patent Application Laid-Open No. 2015-86359).

Since the thermosetting resin sheet described in Japanese Patent Application Laid-Open No. 2015-86359 can be cured at a relatively low temperature, the cured sheet after curing can suppress deformation due to heating.

However, after being packaged by heating a semiconductor element, a thermosetting resin sheet is required to have excellent operability that is unlikely to be damaged even if it contacts other members during operation.

In addition, the thermosetting resin sheet is required to ensure high reliability such as contact (adhesion, adhesion) and the like with the surface of the substrate when the semiconductor element is packaged and then further heated (giving a thermal history).

In addition, the thermosetting resin sheet is also required to be tough.

The present invention provides a sheet for packaging that has toughness and is excellent in both operability and reliability.

The present invention (1) includes an encapsulating sheet, which is an encapsulating sheet including an encapsulating resin composition, inorganic particles, and an operation improving component. In the encapsulating sheet, a content ratio of the inorganic particles is more than 50% by mass and 90% by mass % Or less, the operation improving component is a polymer particle, and in the sealing sheet, a content ratio of the operation improving component is 1% by mass or more and 8% by mass or less.

The present invention (2) includes the sheet for packaging according to (1), wherein the average particle diameter of the polymer particles is 50 μm or less.

The present invention (3) includes the sheet for encapsulation according to (1) or (2), wherein the inorganic particles include: a first particle and a second particle having an average particle size smaller than an average particle size of the first particle.

The present invention (4) includes the encapsulating sheet according to any one of (1) to (3), wherein in the encapsulating sheet, a ratio of the total amount of the inorganic particles and the operation improving component is 80% by mass or more and 95%. Mass% or less.

The present invention (5) includes the encapsulating sheet according to any one of (1) to (4), wherein the encapsulating resin composition further contains a glass transition temperature adjuster.

The present invention (6) includes the encapsulating sheet according to (5), wherein the glass transition temperature adjusting agent is an acrylic polymer.

The present invention (7) includes the encapsulating sheet according to any one of (1) to (6), wherein the encapsulating resin composition includes an epoxy resin and an epoxy resin hardener, and the polymer particles include an epoxy resin and A functional group that reacts with at least one of the epoxy resin hardeners.

The invention (8) includes the encapsulating sheet according to (7), wherein the functional group is at least one selected from the group consisting of an epoxy group, a carboxyl group, and a hydroxyl group.

The present invention (9) includes the encapsulating sheet according to any one of (1) to (8), wherein the polymer particles are polysiloxane particles.

Since the sealing sheet of the present invention contains inorganic particles, and the content of the inorganic particles in the sealing sheet is more than 50% by mass and 90% by mass or less, it has excellent toughness.

In addition, the encapsulating sheet of the present invention contains a polymer particle-improving component, and since the encapsulating sheet has a polymer particle content of 1% by mass or more and 8% by mass or less, it has both operability and reliability. All are excellent.

Invention details Say Bright

A semiconductor device package sheet according to an embodiment of the package sheet of the present invention will be described with reference to FIGS. 1, 2A, and 2B.

This semiconductor element packaging sheet 1 is a packaging sheet for packaging a semiconductor element 3 mounted on a substrate 2.

The semiconductor device package sheet 1 is a component for manufacturing a semiconductor device package 5 described later, and is not the semiconductor device package 5 itself. The semiconductor device package sheet 1 does not include the semiconductor element 3 and a substrate on which the semiconductor element 3 is mounted. 2. Specifically, it is a device that can be used in the industry for individual circulation.

In addition, the semiconductor element packaging sheet 1 is not a hardened body sheet 20 (FIG. 5B and FIG. 5C) after the semiconductor element 3 is packaged, that is, a sheet before the semiconductor element 3 is packaged.

As shown in FIG. 1, the semiconductor device package sheet 1 has a substantially plate shape (film shape) extending in a direction (plane direction) orthogonal to the thickness direction. In addition, the semiconductor device package sheet 1 includes one surface (upper surface) 6 in the thickness direction and the other surface (lower surface) 7 in the thickness direction. One surface 6 in the thickness direction and the other surface 7 in the thickness direction are arranged facing each other in the thickness direction and are parallel to each other.

The other surface 7 in the thickness direction is a contact surface that contacts the semiconductor element 3 and the substrate 2 when the semiconductor element 3 (see FIG. 5B) is packaged by the semiconductor element packaging sheet 1.

The thickness-direction surface 6 is a surface on the thickness-direction side (upper surface) of the substrate 2 in the thickness-direction side when the semiconductor element 3 (see FIG. 5B) is packaged with the semiconductor device package sheet 1 therebetween.

The material of the semiconductor device packaging sheet 1 is a packaging composition (thermosetting composition) that is cured by heating. The encapsulating composition includes an encapsulating resin composition, inorganic particles, and an operation improving component.

The encapsulating resin composition is an adhesive component that combines inorganic particles with an operation-improving component in the semiconductor device encapsulating sheet 1 (encapsulating composition). The sealing resin composition contains a sealing resin (main agent). Examples of the encapsulating resin include epoxy resin, phenol resin, melamine resin, vinyl ester resin, cyano ester resin, maleimide resin, and polysiloxane resin. As the sealing resin, from the viewpoint of heat resistance and the like, epoxy resin is preferably exemplified.

Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, modified bisphenol A epoxy resin, modified bisphenol F epoxy resin, and biphenyl epoxy resin. Bifunctional epoxy resins such as phenol novolac epoxy resin, cresol novolac epoxy resin, trihydroxyphenylmethane epoxy resin, tetraphenol ethane epoxy resin, dicyclopentane Polyfunctional epoxy resins with tri- or higher functionality, such as olefin-type epoxy resins. These epoxy resins can be used alone or in combination of two or more.

A combination of a bifunctional epoxy resin (the first epoxy resin) and a polyfunctional epoxy resin (the second epoxy resin) can be exemplified, and specifically, a bisphenol F-type epoxy resin and a phenol novolac can be exemplified. Type epoxy resin.

The epoxy equivalent of the epoxy resin is, for example, 250 g / eq. Or less, and, for example, 10 g / eq. Or more. When the first epoxy resin and the second epoxy resin are used together, the epoxy equivalent of the first epoxy resin is, for example, 175 g / eq. Or more, preferably 180 g / eq. Or more, and, for example, 250 g / eq. or less, preferably 230 g / eq. or less. The epoxy equivalent of the first epoxy resin is, for example, less than 175 / eq., Preferably 170 g / eq. Or less, and, for example, 10 g / eq. Or more, and preferably 100 g / eq. Or more.

The softening point of the encapsulating resin is, for example, 50 ° C or higher and, for example, 110 ° C or lower. When the first epoxy resin and the second epoxy resin are used together, the softening point of the first epoxy resin is, for example, 70 ° C or higher, preferably 75 ° C or higher, and, for example, 110 ° C or lower, preferably 100 ° C. the following. The softening point of the second epoxy resin is, for example, less than 70 ° C, preferably 65 ° C or lower, and, for example, 50 ° C or higher, and preferably 55 ° C or higher.

The content of the epoxy resin is, for example, 1 part by mass or more, preferably 3 parts by mass or more with respect to 100 parts by mass of the total amount of the inorganic particles and the operation-improving component. It is preferably 10 parts by mass or less. When the first epoxy resin and the second epoxy resin are used together, the content of the first epoxy resin is, for example, 0.5 parts by mass or more with respect to 100 parts by mass of the total amount of the inorganic particles and the operation improving component. It is preferably 2 parts by mass or more, for example, 10 parts by mass or less, and more preferably 5 parts by mass or less. The content of the second epoxy resin is, for example, 75 parts by mass or more, preferably 90 parts by mass or more, and, for example, 125 parts by mass or less with respect to 100 parts by mass of the total amount of the first epoxy resin. It is preferably 110 parts by mass or less.

The content of the epoxy resin packaging composition is, for example, 1% by mass or more, preferably 4% by mass or more, and, for example, 10% by mass or less, and preferably 7% by mass or less. Furthermore, if the first epoxy resin and the second epoxy resin are used in combination, the content ratio of the first epoxy resin in the packaging composition is, for example, 0.5% by mass or more, preferably 2% by mass or more. For example, It is 8% by mass or less, and preferably 4% by mass or less. The content ratio of the second epoxy resin in the packaging composition is, for example, 0.5% by mass or more, preferably 2% by mass or more, and, for example, 8% by mass or less, and preferably 4% by mass or less.

The sealing resin composition preferably contains a hardening agent and a hardening accelerator in addition to the above-mentioned sealing resin. Specifically, it can also be prepared as an encapsulating resin composition containing an encapsulating resin, a curing agent, and a curing accelerator. It is preferably prepared as an epoxy resin composition containing an epoxy resin, an epoxy resin hardener, and an epoxy resin hardening accelerator.

The hardener is a component (preferably an epoxy resin hardener) that hardens the encapsulating resin by heating. Examples of the hardener include phenol resins such as phenol novolac resins.

The content ratio of the hardener. If the encapsulating resin is an epoxy resin and the hardener is a phenol resin, the total amount of hydroxyl groups in the phenol resin is, for example, 0.7 equivalent or more relative to 1 equivalent of the epoxy group in the epoxy resin. It is preferably adjusted to be equal to or greater than 0.9 equivalents, for example, equal to or less than 1.5 equivalents, and preferably equal to or less than 1.2 equivalents. Specifically, the content of the curing agent is, for example, 30 parts by mass or more, preferably 55 parts by mass or more, and, for example, 75 parts by mass or less, and preferably 60 parts by mass relative to 100 parts by mass of the sealing resin. The following.

The hardening accelerator is a catalyst (thermosetting catalyst) (preferably an epoxy resin hardening accelerator) that accelerates the hardening of the encapsulating resin by heating, for example, an organic phosphorus-based compound, and examples thereof include 2-phenyl-4-methyl And other imidazole compounds such as 5-hydroxymethylimidazole (2P4MHZ). Preferred examples include imidazole compounds. The content of the hardening accelerator is, for example, 0.05 parts by mass or more, and, for example, 5 parts by mass or less with respect to 100 parts by mass of the sealing resin.

The sealing resin composition may further contain a glass transition temperature adjuster in addition to the above-mentioned thermosetting resin.

The glass transition temperature adjusting agent is a component (specifically, a component for moderately reducing the glass transition temperature) Tg of the hardened semiconductor element packaging sheet 1 (cured body sheet 20), and examples thereof include heat Plastic resin.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyimide resin (6-nylon or 6,6-nylon, etc.), phenoxy resin, acrylic resin, saturated polyester resin (PET, etc.) , Polyamidoamine imine resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. These thermoplastic resins can be used alone or in combination of two or more.

The thermoplastic resin is preferably an acrylic resin from the viewpoint of improving the dispersibility with a sealing resin (preferably an epoxy resin).

Examples of the acrylic resin include, for example, acrylic polymerization in which one or two or more alkyl (meth) acrylates having a linear or branched alkyl group are used as monomer components and the monomer components are polymerized. Things. In addition, "(meth) acryl group" means "acryl group and / or methacryl group."

Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2 -Ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl Alkyl, dodecyl, and the like having 1 to 20 carbon atoms. Preferred examples include alkyl groups having 1 to 6 carbon atoms.

The acrylic polymer may be a copolymer of an alkyl (meth) acrylate and another monomer (copolymerizable monomer).

As other monomers (copolymerizable monomers), for example, glycidyl-containing monomers such as glycidyl acrylate and glycidyl methacrylate, such as acrylic acid, methacrylic acid, and carboxyethyl Carboxyl-containing monomers such as methacrylic acid esters, carboxypentyl acrylates, itaconic acid, maleic acid, fumaric acid, crotonic acid, such as maleic anhydride, itaconic anhydride, etc. ) 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate Hydroxyl-containing monomers such as esters, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, or (4-hydroxymethylcyclohexyl) -methyl acrylate, such as styrene sulfonic acid , Allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) Sulfonic acid group-containing monomers such as propylene oxynaphthalenesulfonic acid, such as 2-hydroxyethylacrylic acid fluorenyl phosphate-containing monomers, such as styrene monomer Such as acrylonitrile. These monomers can be used alone or in combination of two or more. Among these, preferred are monomers containing a carboxyl group.

The weight average molecular weight of the glass transition temperature adjusting agent is, for example, 100,000 or more, preferably 300,000 or more, and, for example, 1 million or less, and preferably 800,000 or less. In addition, the weight average molecular weight was measured based on a standard polystyrene conversion value by gel permeation chromatography (GPC).

The glass transition temperature (Tg) of the glass transition temperature adjuster is, for example, 20 ° C or lower, preferably 10 ° C or lower, more preferably 0 ° C or lower, even more preferably -10 ° C or lower, most preferably -25 ° C or lower, The temperature is, for example, -70 ° C or higher, and preferably -50 ° C or higher.

If the glass transition temperature is below the upper limit described above, the glass transition temperature Tg (moderately lowered) of the hardened semiconductor element package sheet 1 (cured body sheet 20) can be accurately adjusted, and the hardened semiconductor element package sheet can be sufficiently raised. 1 (hardened body sheet 20) operability. When the glass transition temperature Tg is equal to or higher than the above lower limit, sufficient toughness can be imparted to the cured semiconductor device package sheet 1 (cured body sheet 20).

The content of the thermoplastic resin (parts of solid content) is appropriately adjusted so that the glass transition temperature Tg of the cured semiconductor element packaging sheet 1 (cured body sheet 20) can be set to a desired range, and specifically, With respect to 100 parts by mass of the sealing resin (preferably epoxy resin), for example, 1 part by mass or more, preferably 2 parts by mass or more, more preferably 5 parts by mass or more, and even more preferably 8 parts by mass or more Also, it is, for example, 30 parts by mass or less, preferably 20 parts by mass or less, and more preferably 15 parts by mass or less. The content ratio of the thermoplastic resin is, for example, 0.1% by mass or more, preferably 0.2% by mass or more, more preferably 0.3% by mass or more, and still more preferably 0.45% by mass or more with respect to the packaging composition. It is 15 mass% or less, preferably 10 mass% or less, more preferably 8 mass% or less, and even more preferably 7 mass% or less. If the content and / or content of the thermoplastic resin is at least the above lower limit, the glass transition temperature Tg (moderately reduced) of the hardened semiconductor element packaging sheet 1 (specifically, the hardened body sheet 20) can be sufficiently adjusted. Therefore, the description below can suppress the interface peeling with respect to the substrate 2 of the cured body sheet 20 and can improve the reliability.

The glass transition temperature adjuster can also be prepared by diluting with a suitable solvent.

Inorganic particles are fillers for improving the strength of the semiconductor device packaging sheet 1. Examples of the material of the inorganic particles include inorganic compounds such as quartz glass, talc, silicon dioxide, aluminum oxide, aluminum nitride, silicon nitride, and boron nitride. These can be used alone or in combination of two or more. Preferable examples include silicon dioxide.

The shape of the inorganic particles is not particularly limited, and examples thereof include a slightly spherical shape, a slightly plate shape, a slightly needle shape, and an irregular shape. Preferable examples include a slightly spherical shape.

The average value of the maximum length of the inorganic particles (if it has a slightly spherical shape, the average particle diameter) M, for example, 50 μm or less, preferably 20 μm or less, more preferably 10 μm or less, and, for example, 0.1 μm or more, preferably It is 0.5 μm or more. The average particle diameter M is obtained, for example, based on a particle size distribution obtained by a particle size distribution measurement method in a laser scattering method, and is obtained as a D50 value (50% of the median diameter).

If the average value of the maximum length of the inorganic particles is equal to or less than the above-mentioned upper limit, one surface 6 in the thickness direction and the other surface 7 in the thickness direction can be reliably made flat.

The inorganic particles may include first particles and second particles having an average value M2 having a maximum length smaller than the average value M1 of the maximum length of the first particles.

The average value of the maximum length of the first particles (if it has a slightly spherical shape, the average particle diameter) M1 is, for example, 1 μm or more, preferably 3 μm or more, and, for example, 50 μm or less, and preferably 30 μm or less.

The average value of the maximum length of the second particles (if the shape is slightly spherical, the average particle diameter) M2, for example, is less than 1 μm, preferably 0.8 μm or less, and, for example, 0.01 μm or more, and preferably 0.1 μm the above.

The ratio (M1 / M2) of the average value of the maximum length of the first particle to the average value of the maximum length of the second particle is, for example, 2 or more, preferably 5 or more, and, for example, 50 or less, preferably 20 the following.

The materials of the first particles and the second particles may be the same or different. It is preferable that the material of both the first particles and the second particles is the same, and specifically, it is silicon dioxide.

Furthermore, the inorganic particles may be partially or entirely surface-treated with a silane coupling agent or the like. A combination of the first particles without surface treatment and the second particles with surface treatment is preferred.

The content ratio of the inorganic particles (the total amount if the first particles and the second particles are used in combination) is more than 50% by mass, and preferably 70% by mass in the semiconductor device packaging sheet 1 (encapsulation composition). % Or more, more preferably 80% by mass or more, 90% by mass or less, and more preferably 87% by mass or less. If the content ratio of the inorganic particles is lower than the above-mentioned lower limit, the toughness of the sheet 1 for encapsulating a semiconductor element cannot be secured, and the operability is reduced. When the content ratio of the inorganic particles is higher than the above-mentioned upper limit, the semiconductor element packaging sheet 1 is brittle, and the semiconductor element 3 cannot be reliably packaged.

If the inorganic particles include the first particles and the second particles, the first particles and the second particles, the encapsulating resin composition can be efficiently dispersed in the semiconductor device encapsulating sheet 1 to make the semiconductor element encapsulating sheet 1 tough. Promotion.

The operation improving component is to reduce the tensile storage modulus E 'of the cured semiconductor element packaging sheet 1 (cured body sheet 20) at 25 ° C, and to suppress the operation of the cured semiconductor element packaging sheet 1 (cured body sheet 20). Damaged ingredients.

The operation-improving component, specifically, polymer particles.

The polymer particles are dispersed particles dispersed in the packaging composition in the sheet 1 for encapsulating a semiconductor device. On the other hand, the polymer particles are elastomers introduced into the polymer domain in two kinds of particle components, inorganic particles and polymer particles. Ingredients (rubber ingredients).

Specifically, as a material of the polymer particles, for example, a silicone polymer (polysiloxane rubber), an acrylic polymer, an epoxy polymer, a styrene polymer, or the like can be exemplified. A preferable example is a polysiloxane polymer.

The shape of the polymer particles is not particularly limited, and examples thereof include a slightly spherical shape, a slightly plate shape, a slightly needle shape, and an irregular shape. Preferable examples include a slightly spherical shape.

The average value of the maximum length of the polymer particles (if it has a slightly spherical shape, the average particle diameter) is, for example, 0.5 μm or more, preferably 1 μm or more, and, for example, 20 μm or less, and preferably 10 μm or less. If the average value of the maximum length of the polymer particles is equal to or less than the above-mentioned upper limit, the thickness direction one surface 6 and the thickness direction other surface 7 of the semiconductor device package sheet 1 can be reliably made flat.

Moreover, the polymer particle may contain a functional group which reacts with at least one of an epoxy resin and an epoxy resin hardener on the surface.

Examples of the functional group include an epoxy group, a carboxyl group, and a hydroxyl group. The functional group may be a single kind or a plural kind. Preferred examples include epoxy groups.

Alternatively, the polymer particles may contain the above-mentioned functional group on the surface.

The polymer particles preferably have a functional group on the surface. If the polymer particles contain functional groups on the surface thereof, and when the sheet 1 for encapsulating a semiconductor element is heated, the above-mentioned functional groups chemically react with at least one of the epoxy resin and the epoxy resin hardener to form a chemical bond between the two. The polymer particles are securely bound to the encapsulating resin composition. Therefore, the strength of the semiconductor device package sheet 1 after curing (encapsulation) can be improved.

The content of the operation improving component is 1% by mass or more, preferably 2% by mass or more, more preferably 3% by mass or more, and even more preferably 4% by mass or more in the semiconductor device packaging sheet 1 (package composition). It is also 8 mass% or less, preferably 7 mass% or less, more preferably 6 mass% or less, and even more preferably 5 mass% or less.

If the content of the operation-improving component is lower than the above-mentioned lower limit (specifically, 1% by mass), the semiconductor device packaging sheet 1 cannot be improved, and in particular, the cured semiconductor device packaging sheet 1 (specifically, described later) The workability of the hardened body sheet 20) (specifically, the damage suppression property caused by contact with other members).

On the other hand, if the content of the operation improving component is higher than the above-mentioned upper limit, the sheet 1 for semiconductor device packaging, in particular, the sheet 1 for semiconductor device packaging after curing (specifically, a hardened body sheet 20 described later) and the substrate The adhesion force of 2 is reduced, and interfacial peeling occurs between the two. Therefore, the reliability as the sheet 1 for semiconductor element packaging is reduced.

In detail, if the content ratio of the operation improving component is higher than the above upper limit (specifically, 8% by mass), the glass of the semiconductor device packaging sheet 1 (specifically, the hardened sheet 20) (described later) after curing is hardened. As the transition temperature Tg becomes too low, as shown in FIG. 3B, the first thermal expansion coefficient α1 below the glass transition temperature Tg and the second thermal expansion coefficient α2 exceeding the glass transition temperature Tg cannot ensure a low value. The area of the first thermal expansion coefficient α1 is sufficiently wide. Therefore, the second thermal expansion coefficient α2 is adopted as the thermal expansion coefficient of the hardened body sheet 20 in subsequent heating and the like. In this case, the difference between the thermal expansion coefficients of the substrate 2 and the hardened body sheet 20 becomes large. Delamination at the interface between the other surface 7 in the thickness direction and the exposed region 12 of the substrate 2.

The proportion of the total amount of the inorganic particles and the operation improving component is, for example, 80% by mass or more, preferably 82% by mass or more, and 95% by mass or less in the semiconductor element packaging sheet 1 (encapsulation composition), It is preferably 90% by mass or less. When the ratio of the total amount of the inorganic particles and the operation-improving component is equal to or more than the above-mentioned lower limit, the toughness of the semiconductor device package sheet 1 can be reliably ensured. When the ratio of the total amount of the inorganic particles and the operation improving component is equal to or less than the above-mentioned upper limit, the brittleness of the sheet 1 for encapsulating a semiconductor element can be suppressed.

In addition, additives such as pigments and silane coupling agents may be added to the packaging composition in an appropriate ratio.

Examples of the pigment include black pigments such as carbon black. The average particle diameter of the pigment is, for example, 0.001 μm or more, for example, 1 μm or less. The proportion of the pigment is, for example, 0.1% by mass or more and, for example, 2% by mass or less with respect to the packaging composition.

Silane coupling agents are blended for the purpose of surface treatment (surface treatment) of inorganic particles. Examples of the silane coupling agent include an epoxy group-containing silane coupling agent. Examples of the epoxy-containing silane coupling agent include 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and the like. Glycidoxydialkyldialkoxysilane, such as 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, etc. Oxyalkyltrialkoxysilane. Preferable examples include 3-glycidoxyalkyltrialkoxysilane. The blending ratio of the silane coupling agent is, for example, 0.1 part by mass or more, preferably 1 part by mass or more, and, for example, 10 parts by mass or less, and preferably 5 parts by mass or less with respect to 100 parts by mass of the inorganic particles.

Next, a method for manufacturing the semiconductor device package sheet 1 will be described.

In manufacturing the semiconductor device package sheet 1, for example, the packaging composition is dissolved and / or dispersed in a solvent (for example, methyl ethyl ketone, toluene, ethyl acetate, etc.), a varnish is prepared, and this is applied to a release sheet 15 Let it dry. Thereby, the semiconductor device package sheet 1 is manufactured in the state supported by the peeling sheet 15. Thereafter, if necessary, the second release sheet 25 is disposed on the opposite side of the release sheet 15 with respect to the semiconductor element package sheet 1. That is, the semiconductor device package sheet 1 is manufactured in a state where the peeled sheet 15 and the second peeled sheet 25 are sandwiched in the thickness direction.

In addition, the varnish is not prepared, and the semiconductor device package sheet 1 can be manufactured from the package composition at one time by kneading and extruding. In addition, the heating conditions in the kneading extrusion are conditions in which the encapsulating resin composition is not completely hardened.

The encapsulating resin composition in the semiconductor element packaging sheet 1 is, for example, B-stage (semi-hardened incompletely cured). The B stage is a state where the encapsulating resin composition is in a liquid state between the A stage and the fully cured C stage, and only slightly hardened and gelled, and the compressive elastic modulus is smaller than that of the C phase. .

Thereby, the semiconductor device package sheet 1 is manufactured.

The thickness of the semiconductor element package sheet 1 is not particularly limited, and is, for example, 100 μm or more, and, for example, 2000 μm or less.

Next, a method of manufacturing a semiconductor element package 5 by using this semiconductor element package sheet 1 to package a semiconductor element 3 will be described.

A method of manufacturing a semiconductor element package 5 includes a step of preparing a semiconductor element 3, a step of preparing a semiconductor element package sheet 1, a semiconductor element package 3 is encapsulated by the semiconductor element package sheet 1, and a cured body is prepared by the semiconductor element package sheet 1. The step of obtaining the semiconductor element package 5 from the sheet 20 and the step of recovering the semiconductor element package 5 by a pick-up device.

In this method, as shown in FIG. 2A, first, a semiconductor element 3 and a substrate 2 are prepared.

The semiconductor element 3, such as a semiconductor wafer, has a substantially flat plate shape extending in the plane direction. The semiconductor element 3 is not particularly limited. A terminal 4 is provided on the other surface (lower surface) of the semiconductor element 3 in the thickness direction. A plurality of terminals 4 are arranged at intervals in the plane direction.

The semiconductor element 3 is mounted on one surface (upper surface) in the thickness direction of the substrate 2. Specifically, the semiconductor element 3 is mounted on the substrate 2 by flip-chip mounting, for example.

Further, a plurality of semiconductor elements 3 are arranged on the substrate 2 at intervals in the plane direction.

The substrate 2 has a slightly flat shape extending in the plane direction. The substrate 2 has a facing surface 8 (upper surface) facing the semiconductor element 3. The face 8 has a plane along the plane direction.

The facing surface 8 of the substrate 2 has a size surrounding a plurality of semiconductor elements 3 in a plan view. That is, the facing surface 8 of the substrate 2 has, in a plan view, a repeating region 11 that overlaps with the plurality of semiconductor elements 3 and an exposed region 12 that does not overlap with the plurality of semiconductor elements 3 and is exposed from the substrate 2. The facing surface 8 includes a substrate terminal 9 corresponding to the terminal 4 in the overlap region 11.

In this method, next, a semiconductor device package sheet 1 is prepared. The release sheet 15 is peeled from the other side 7 in the thickness direction of the semiconductor device package sheet 1.

Thereafter, the semiconductor device package sheet 1 is placed on the semiconductor element 3 such that the other surface 7 in the thickness direction contacts one surface (upper surface) in the thickness direction of the semiconductor element 3.

As shown in FIG. 2B, the semiconductor element 3 is then packaged by the semiconductor element packaging sheet 1.

For example, a flat plate press (not shown) provided with a lower plate and an upper plate is used to heat and press the semiconductor device package sheet 1, and a plurality of semiconductor devices 3 are packaged with the semiconductor device package sheet 1.

Further, by the above-mentioned heating, the semiconductor device package sheet 1 is thermally cured. Specifically, once softened, the packaging composition of the semiconductor device package sheet 1 is completely cured (C-staged).

The heating condition is a condition in which the packaging composition is completely hardened. Specifically, the heating temperature is, for example, 85 ° C or higher, preferably 100 ° C or higher, and, for example, 200 ° C or lower, and preferably 180 ° C or lower. The heating time is, for example, 20 minutes or more, preferably 30 minutes or more, and, for example, 300 minutes or less, and preferably 180 minutes or less. The pressure is not particularly limited, but is, for example, 0.1 MPa or more, preferably 0.5 MPa or more, and, for example, 10 MPa or less, and preferably 5 MPa or less.

When the semiconductor element packaging sheet 1 is softened, the semiconductor element 3 is embedded. In other words, the semiconductor element 3 is embedded in the semiconductor element packaging sheet 1.

Next, the semiconductor element packaging sheet 1 covers the peripheral side surface of the semiconductor element 3 and contacts the exposed area 12 in the facing surface 8. In addition, the semiconductor device package sheet 1 can contact a part of the repeating region 11. Specifically, the semiconductor device package sheet 1 is allowed to enter between the repeating region 11 and an area outside the terminal 4 (outside in the plane direction) of the one surface 6 in the thickness direction. In addition, it is preferable that the semiconductor device package sheet 1 is not allowed to intrude into a region further inside the terminal 4.

Thereby, the semiconductor element 3 is packaged by the semiconductor element packaging sheet 1. The exposed region 12 in the substrate 2 is contacted (adhered) by the semiconductor device package sheet 1.

In addition, the semiconductor device package 3 and the semiconductor device package sheet 1 in contact with the exposed area 12 of the substrate 2 are in a state of being cured (completely cured) by heating (C stage). Therefore, the semiconductor device package sheet 1 becomes a cured body sheet 20.

After that, the second release sheet 25 is peeled from the other surface 7 in the thickness direction of the cured body sheet 20.

Thereafter, when the semiconductor device package sheet 1 (or the hardened body sheet 20) is to be further thermally cured, it is removed from the flat plate press and put into another heating furnace.

The tensile storage modulus E 'of the hardened sheet 20 at 25 ° C is, for example, 17 GPa or less, preferably 15 GPa or less, more preferably 15 GPa or less, even more preferably 14.5 GPa or less, and still more preferably 14 GPa or less. Furthermore, it is 13 GPa or less, and further 12 GPa or less. For example, it is 5 GPa or more, Preferably it is 9 GPa or more.

The tensile storage modulus E 'of the hardened sheet 20 was obtained by performing a dynamic viscoelasticity measurement at a scanning temperature: 0 to 260 ° C, a frequency: 1 Hz, and a heating rate: 10 ° C / min.

If the tensile storage modulus E 'of the hardened body sheet 20 is below the above-mentioned upper limit, even if the hardened body sheet 20 comes into contact with other members, damage can be suppressed. On the other hand, if the tensile storage modulus E 'of the hardened body sheet 20 is at least the above lower limit, the strength of the hardened body sheet 20 can be secured.

The glass transition temperature Tg of the hardened sheet 20 is, for example, 110 ° C or higher, preferably 120 ° C or higher, more preferably 130 ° C or higher, even more preferably 135 ° C or higher, and, for example, 160 ° C or lower, preferably 150. Below ℃, more preferably below 150 ° C, and even more preferably below 145 ° C.

The glass transition temperature Tg of the hardened sheet 20 was subjected to dynamic viscoelasticity measurement at a scanning temperature: 0 to 260 ° C, a frequency: 1Hz, and a heating rate: 10 ° C / minute to obtain a tensile storage modulus E 'and a tensile loss modulus. E ”, from which a curve of tanδ (= E” / E ') is obtained, and the peak value of tanδ is obtained.

If the glass transition temperature Tg of the hardened sheet 20 is above the lower limit, as shown in FIG. 3A, a first thermal expansion coefficient α1 (described later) below the glass transition temperature Tg and a second thermal expansion coefficient exceeding the glass transition temperature Tg can be ensured. Among α2, the region of the first thermal expansion coefficient α1 having a low numerical value is sufficiently wide. That is, the first thermal expansion coefficient α1 having a low numerical value can be secured in a wide temperature range. Therefore, the difference in thermal expansion coefficient between the substrate 2 and the cured body sheet 20 can be reduced, and peeling at the interface between the other surface 7 in the thickness direction of the cured body sheet 20 and the exposed region 12 of the substrate 2 can be suppressed (described later).

The first thermal expansion coefficient α1 of the hardened body sheet 20 is, for example, 20 ppm / K or less, and is 5 ppm / K or more. The first thermal expansion coefficient α1 of the hardened body sheet 20 is a thermal expansion coefficient in a low temperature region below the glass transition temperature Tg, and is lower than a temperature of the second thermal expansion coefficient α2 in a high temperature region exceeding the glass transition temperature Tg.

Thereby, a semiconductor element package 5 including a substrate 2, a plurality of semiconductor elements 3, and a cured body sheet 20 can be obtained.

Thereafter, a dicing tape 16 is attached to the hardened body sheet 20 in the semiconductor element package 5, and thereafter, as shown in FIG. 2C, these are inverted upside down. Next, corresponding to the semiconductor element 3, five semiconductor elements are packaged into chips. Specifically, the hardened body sheet 20 and the substrate 2 around the semiconductor element 3 are cut by, for example, a dicing saw.

In this method, thereafter, the semiconductor device package 5 which is singulated and provided with one semiconductor element 3 is self-cutting using a pickup device (an example of a recovery device) including a pressing portion 10 and a recovery portion (not shown). The adhesive tape 16 is peeled and recovered.

Examples of the pressing portion 10 include a needle member (specifically, an ejector pin) extending in the thickness direction. The pressing portion 10 can be moved (throwable) in the thickness direction. The front end of the pressing portion 10 may be sharp.

Then, the semiconductor device package 5 is peeled and recovered from the dicing tape 16 by a pick-up device. First, the pressing portion 10 separates each semiconductor device package 5 from one side in the thickness direction to the other (the direction of the self-cutting tape 16 to the semiconductor device package 5). ), And thereafter, the pushed-up semiconductor element package 5 is collected by a collection unit (not shown).

In addition, when the pressing portion 10 pushes the semiconductor element package 5 through the dicing tape 16, the front end of the pressing portion 10 breaks through the dicing tape 16 and comes into contact with the semiconductor element package 5 (specifically, the hardened body sheet 20). .

The sheet 1 for encapsulating a semiconductor device contains inorganic particles. The content of the inorganic particles in the sheet 1 for encapsulating a semiconductor device exceeds 50% by mass and 90% by mass or less, and thus has excellent toughness.

In addition, this semiconductor device packaging sheet 1 contains polymer particle processing improvement components. The content of the processing improvement component in the semiconductor device packaging sheet is 1% by mass or more and 8% by mass or less. Both are excellent.

In detail, since the content of the operation-improving component is equal to or higher than the above-mentioned lower limit, the sheet 1 for semiconductor device packaging, particularly the sheet 1 for semiconductor device packaging after hardening (specifically, a hardened body sheet 20 described later) can be improved. The operability, specifically, can improve the damage suppression property caused by contact with the pressing portion 10 having a sharp tip.

However, one surface 6 of the hardened body sheet 20 in the thickness direction is easily damaged by contact with the front end of the pressing portion 10. However, since the content ratio of the operation-improving component is equal to or more than the above-mentioned lower limit, the above-mentioned damage can be suppressed and excellent operability can be obtained. The member in contact with the hardened body sheet 20 is not limited to the pressing portion 10, and examples thereof include an accumulation machine and the like.

On the other hand, if the content of the operation-improving component is lower than the above-mentioned upper limit, the semiconductor device package sheet 1, particularly the cured semiconductor device package sheet 1 (specifically, the hardened body sheet 20 described later) and the substrate are suppressed. Since the adhesion of 2 is reduced, interfacial peeling is difficult to occur between them, and therefore, the reliability as a sheet 1 for semiconductor device packaging is improved.

In other words, if the content of the operation-improving component is higher than the above-mentioned upper limit, the glass transition temperature Tg of the semiconductor device package sheet 1 (specifically, the cured body sheet 20) (described later) after curing becomes too low, Therefore, as shown in FIG. 3B, the area of the first thermal expansion coefficient α1 having a low value among the first thermal expansion coefficient α1 below the glass transition temperature Tg and the second thermal expansion coefficient α2 exceeding the glass transition temperature Tg cannot be ensured to be sufficiently wide. . That is, the first thermal expansion coefficient α1 having a low numerical value is secured only in a relatively narrow temperature range. Therefore, the second thermal expansion coefficient α2 is used as the thermal expansion coefficient of the hardened body sheet 20 during subsequent heating and the like. In this case, the difference in thermal expansion coefficient between the substrate 2 and the hardened body sheet 20 becomes large. Therefore, the hardened body sheet cannot be suppressed. The peeling occurs at the interface between the other surface 7 in the thickness direction 20 and the exposed area 12 of the substrate 2.

＜ Modifications ＞
In each of the following modifications, the same components as those of the above-mentioned embodiment are denoted by the same reference numerals, and descriptions thereof are omitted. In addition, each modification can exhibit the same functions and effects as those of the first embodiment except for the special description. Furthermore, an embodiment and each modification can be combined suitably.

In FIG. 1, although the semiconductor device package sheet 1 is formed of a single layer, it is not shown, for example, and it may be a laminated body of a plurality of layers.

After the semiconductor element 3 using the semiconductor element packaging sheet 1 is packaged, if necessary, as shown by a dotted line at the right side of FIG. 2B, the thickness of one end of the semi-hardened sheet 20 can be removed by grinding or the like, for example. The surface 6 in the thickness direction of the cured body sheet 20 and the surface in the thickness direction of the semiconductor element 3 become one surface (continuous). That is, one side of the thickness direction of the semiconductor element 3 is exposed from the cured body sheet 20.

In addition, a singular semiconductor element 3 may be packaged by the semiconductor element packaging sheet 1.

The semiconductor element package 5 may be obtained without cutting the hardened body sheet 20.

Moreover, in one embodiment, as an example of the packaging sheet, the semiconductor device packaging sheet 1 may be exemplified. Although the semiconductor device 3 is packaged, it is not limited to this. Element packaging sheet. In this case, the electronic component package can be manufactured using the electronic component packaging sheet.

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples. The present invention is not limited to any Examples and Comparative Examples. In addition, specific numerical values such as the blending ratio (content ratio), physical property values, and parameters used in the following description may be replaced with the corresponding blending ratio (content ratio) and physical property values described in the above-mentioned "Embodiment". , Parameters, etc. The upper limit (values defined by "below" and "not reached") or lower limit (values defined by "above" and "exceeded").

Each component used in an Example and a comparative example is shown below.

Epoxy resin A: YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F-type epoxy resin, epoxy equivalent 200 g / eq. Softening point 80 ° C)
Epoxy resin B: EPPN501-HY manufactured by Nippon Kayaku Co., Ltd. (epoxy equivalent: 169 g / eq., Softening point: 60 ° C)
Hardener: LVR-8210DL (Novolac phenol resin, epoxy resin hardener, hydroxyl equivalent: 104 g / eq., Softening point: 60 ° C), manufactured by Qunrong Chemical Co., Ltd.
Hardening accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co., Ltd., epoxy resin hardening accelerator glass transition temperature adjuster: HME- 2006M, carboxyl-containing acrylate copolymer (acrylic polymer), weight average molecular weight: 600,000, glass transition temperature (Tg): -35 ° C, methyl ethyl ketone solution silane coupling agent with a solid content concentration of 20% by mass : KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
Pigment: # 20 (carbon black) manufactured by Mitsubishi Chemical Corporation
First particle: FB-5SDC (spherical fused silica powder (inorganic particles), average particle size: 5 μm)
Second particle: Surface-treated SC220G-SMJ (average particle size: 0.5 μm) manufactured by Admatechs with 3-methacryloxypropyltrimethoxysilane (product name: Shin-Etsu Chemical Co., Ltd .: KBM-503) Inorganic particles. The surface treatment is performed with 1 part by weight of a silane coupling agent with respect to 100 parts by weight of the inorganic particles.

Operation improvement component: EP-2601 (Toray Dow Corning Corporation) (spherical polysiloxane particles having an epoxy group and an average particle diameter of 2 μm)

Examples 1 to 6 and Comparative Examples 1 to 3
According to the blending formula in Table 1, each component was dissolved and dispersed in methyl ethyl ketone to obtain varnish. The solid content concentration of the varnish was 80% by mass.

The varnish was applied to the surface of the release sheet 15 and then dried at 120 ° C for 2 minutes. Thereby, the semiconductor device package sheet 1 with a thickness of 100 μm was manufactured.

(Evaluation 1)
Regarding the sheet 1 for semiconductor element packaging, the following items were evaluated. The results are described in Table 1.

(Tensile storage modulus E ')
The semiconductor element packaging sheet 1 was heated at 150 ° C. for 1 hour to prepare a cured body sheet 20. Next, about the hardened body sheet 20, the tensile storage modulus E 'was measured using a solid viscoelasticity measuring device (manufactured by TA Instruments, format: RSA-G2).

Specifically, a sample having a length of 20 mm × a width of 3 mm × a thickness of 100 μm was taken from the hardened body sheet 20, and dynamic viscoelasticity measurement was performed under the following conditions to obtain a tensile storage modulus E at 25 ° C.

Mode: Stretch Scanning Temperature: 0 ~ 260 ℃
Frequency: 1Hz
Heating rate: 10 ° C / min

(Measurement of the first thermal expansion coefficient α1)
The semiconductor element packaging sheet 1 was heated at 150 ° C. for 1 hour to prepare a cured body sheet 20. Next, a sample of length 15 mm × width 4.5 mm × thickness 100 μm was taken from the hardened body sheet 20, and this was set on a thermomechanical measuring device (manufactured by Rigaku Co., Ltd .: form TMA8310) for a film stretching measurement jig, at 25 to 260 In the temperature range of ℃, a first thermal expansion coefficient α1 (a thermal expansion coefficient α below a glass transition temperature Tg) was obtained from an expansion coefficient of 30 ° C to 50 ° C under a condition of a tensile load of 2 g and a heating rate of 5 ° C / min.

(Glass transition temperature Tg)
The semiconductor element packaging sheet 1 was heated at 150 ° C. for 1 hour to prepare a cured body sheet 20. Next, about the hardened | cured material sheet 20, the tensile storage modulus E 'was measured using the solid viscoelasticity measuring apparatus (made by TA Instruments, form: RSA-G2).

Specifically, a sample of length 20 mm × width 3 mm × thickness 100 μm is taken from the hardened body sheet 20, and dynamic viscoelasticity measurement is performed under the following conditions to obtain a tensile storage modulus E ′ and a tensile loss modulus E ”, From this, a curve of tan δ (= E ”/ E ′) was obtained, and the glass transition temperature Tg was obtained as the peak value of tan δ.

Mode: Stretch Scanning Temperature: 0 ~ 260 ℃
Frequency: 1Hz
Heating rate: 10 ° C / min

(Evaluation 2)
Based on Evaluation 1, the reliability and operability were evaluated according to the following criteria.
The results are described in Table 1.

(Reliability)
：: The glass transition temperature Tg is 110 ° C or higher.
×: The glass transition temperature Tg did not reach 110 ° C.

(Operability)
：: The tensile storage modulus E ′ at 25 ° C. is 15 GPa or less.
×: The tensile storage modulus E 'at 25 ° C exceeds 15 GPa.

In addition, although the above-mentioned invention is provided by the embodiment exemplified in the present invention, this is merely an example and is not limited to the explanation. Modifications of the present invention known to those skilled in the art are also included in the scope of patent application to be described later.

1‧‧‧Semiconductor element packaging sheet

2‧‧‧Semiconductor

3‧‧‧ substrate

4‧‧‧terminal

5‧‧‧Semiconductor component packaging

6‧‧‧ thickness side

7‧‧‧ thickness side

8‧‧‧ face to face

9‧‧‧ substrate terminal

10‧‧‧Pressing section

11‧‧‧ repeat area

12‧‧‧ exposed area

15‧‧‧ peeling sheet

16‧‧‧ Cutting Tape

20‧‧‧hardened body sheet

25‧‧‧Second peeling sheet

FIG. 1 shows a cross-sectional view of a semiconductor device package sheet according to an embodiment of the package sheet of the present invention.

FIG. 2A to FIG. 2C show the steps of a method for manufacturing a semiconductor element package using the semiconductor element packaging sheet shown in FIG. 1, and FIG. 2A shows the semiconductor element packaging sheet with the semiconductor element and the substrate facing out. Steps, FIG. 2B shows the steps of packaging the semiconductor element by the semiconductor element packaging sheet to obtain the semiconductor element package, and FIG. 2C shows the dicing tape is attached to the semiconductor element package, and then the semiconductor element package is singulated to pick up the device. Steps for recycling semiconductor device packages.

3A and 3B are graphs showing the coefficient of thermal expansion of a general resin having a glass transition temperature, FIG. 3A is a graph showing the coefficient of thermal expansion of a resin having a relatively high glass transition temperature, and FIG. 3B is a graph showing the thermal expansion of a resin having a relatively low glass transition temperature Graph of coefficients.

Claims (9)

An encapsulating sheet comprising an encapsulating resin composition, an inorganic particle, and an operation improving component, It is characterized in that the content of the inorganic particles in the sealing sheet is more than 50% by mass and 90% by mass or less, The aforementioned operation improving component is polymer particles, In the sealing sheet, a content ratio of the operation improving component is 1% by mass or more and 8% by mass or less. The encapsulating sheet according to claim 1, wherein the average particle diameter of the polymer particles is 50 μm or less. The encapsulating sheet according to claim 1, wherein the inorganic particles contain The first particle and the second particle, The second particles have an average particle diameter smaller than the average particle diameter of the first particles. The encapsulating sheet according to claim 1, wherein in the encapsulating sheet, a ratio of the total amount of the inorganic particles and the operation improving component is 80% by mass or more and 95% by mass or less. The encapsulating sheet according to claim 1, wherein the encapsulating resin composition further contains a glass transition temperature adjuster. The sealing sheet according to claim 5, wherein the glass transition temperature adjuster is an acrylic polymer. The encapsulating sheet according to claim 1, wherein the encapsulating resin composition contains an epoxy resin and an epoxy resin hardener, The polymer particles contain a functional group that reacts with at least one of an epoxy resin and an epoxy resin hardener. The encapsulating sheet according to claim 7, wherein the functional group is at least one selected from the group consisting of an epoxy group, a carboxyl group, and a hydroxyl group. The encapsulating sheet according to claim 1, wherein the polymer particles are polysiloxane particles.