TW202039728A - Dicing tape-integrated semiconductor back surface adhesion film having secondary processability for bonding - Google Patents

Abstract

The present invention provides a dicing tape-integrated semiconductor back surface adhesion film, which has secondary processability for bonding. A composite film X (a dicing tape-integrated semiconductor back surface adhesion film) of the present invention includes a film 10 (a semiconductor back surface adhesion film) and a dicing tape 20. In contrast to a first peel adhesion between the film 10 and the dicing tape 20 measured by a peeling test under a specific first condition, a second peel adhesion between a test piece and a silicon wafer surface under the first condition is greater, wherein the test piece is derived from the film 10 and bonded to the silicon wafer surface at 70 DEG C. In addition, in contrast to a third peel adhesion between the film 10 and the dicing tape 20 measured by the peeling test under a specific second condition, a fourth peel adhesion between the test piece and the silicon wafer surface under the second condition is less, wherein the test piece is derived from the film 10 and bonded to the silicon wafer surface at 70 DEG C.

Description

Die-cut tape integrated semiconductor backside adhesive film

The present invention relates to a semiconductor backside adhesive film with integrated dicing tape, which can be used in the manufacturing process of semiconductor devices.

In the manufacture of semiconductor devices with flip-chip mounted semiconductor chips, a dicing tape integrated semiconductor backside adhesion film is sometimes used to obtain a semiconductor chip with a protective film on the backside of the chip. The dicing tape-integrated semiconductor backside adhesive film has, for example, a dicing tape including a base material and an adhesive layer, and a semiconductor backside adhesive film that is releasably attached to the adhesive layer side. The semiconductor backside adhesive film has a disk shape corresponding to the size of the semiconductor wafer as a workpiece, and is concentrically attached to the adhesive layer side with respect to the dicing tape having a disk shape whose size exceeds the size.

The dicing tape integrated semiconductor backside adhesive film is used, for example, as follows. First, the semiconductor backside adhesive film of the dicing tape integrated semiconductor backside adhesive film is bonded to the semiconductor wafer (bonding step). In this step, for a group of semiconductor wafers and a ring frame arranged in a state where the semiconductor wafer is surrounded by a ring frame, the area around the semiconductor backside adhesive film of the dicing tape or its adhesive layer is attached to the ring The bonding industry of the chip-cut tape integrated semiconductor back-bonding film is carried out by bonding the semiconductor back-side bonding film to the wafer. Then, in a state where the semiconductor wafer is held by the dicing tape integrated semiconductor backside adhesion film, the semiconductor wafer is singulated into wafers, for example, by blade dicing. Thereby, it is possible to obtain a semiconductor chip with a protective film on the back surface of the chip size derived from the semiconductor backside adhesive film, that is, a semiconductor chip with a protective film. The flip chip is mounted on a specific substrate. The technology related to such a dicing tape integrated semiconductor backside adhesive film is described in, for example, Patent Documents 1 and 2 below. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-151360 [Patent Document 2] International Publication No. 2014/092200

[The problem to be solved by the invention]

In the bonding step as described above, the bonding position of the dicing tape integrated semiconductor backside adhesive film corresponding to the semiconductor wafer as the workpiece and the accompanying ring frame may be offset (adhesive offset ). The dicing tape-integrated semiconductor backside adhesive film accompanied by the offset of the bonding of the semiconductor wafer and the ring frame surrounding it is present in the step after the bonding step, and the processing through the ring frame cannot be performed.

The present invention was thought out based on the above circumstances, and its object is to provide a dicing tape integrated semiconductor backside adhesive film with secondary workability for bonding. [Technical means to solve the problem]

The dicing tape integrated semiconductor backside adhesion film of the present invention is a composite film provided with a dicing tape and a semiconductor backside adhesion film. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive film on the back surface of the semiconductor is peelably attached to the adhesive layer of the dicing tape. This dicing tape integrated semiconductor backside adhesion film can be used to obtain a semiconductor wafer with a wafer backside protection film in the manufacturing process of a semiconductor device.

Regarding the wafer-cut tape-integrated semiconductor backside adhesive film (composite film), compared to the first test piece (prepared with this composite film) at 25°C and a peeling angle of 180 ° and the tensile speed of 300 mm/min in the peel test measured in the first peel adhesion force, the first semiconductor backside adhesion film test piece (using this composite film) (Preparation) The second peel adhesion force measured in the peel test at 25°C, peel angle 180°, and tensile speed 300 mm/min between the silicon wafer plane and the silicon wafer plane is greater. The first test piece is a test piece prepared by cutting out from this composite film (the same applies to the following second to fourth test pieces). The first semiconductor backside adhesive film test piece is a test piece prepared by peeling the semiconductor backside adhesive film from the composite film, attaching a backing tape to the side exposed by the peeling, and cutting out from the bonded body ( The same applies to the following second to fourth semiconductor backside adhesive film test pieces). The second peel adhesive force is equivalent to the peel adhesive force between the workpiece contact surface (the side opposite to the dicing tape) of the semiconductor backside adhesive film of this composite film and the plane of the silicon wafer (about the following fourth and second 6, and the eighth peel adhesion is also the same). In addition, in the present invention, the peeling adhesive force to the silicon wafer plane refers to the peeling adhesive force to the silicon wafer plane polished with the grinding material of No. 2000.

Such a structure is suitable for ensuring good adhesion to the semiconductor wafer as a workpiece after the composite film is attached to the semiconductor wafer as a workpiece using its semiconductor backside adhesive film, for example, at room temperature and its vicinity.

At the same time, with regard to this composite film, compared to the second test piece (prepared by this composite film) at 60°C, a peeling angle of 180° and a stretching speed of 300 mm between the dicing tape and the semiconductor backside adhesive film The third peel adhesion force measured in the peel test under the condition of /min, the second semiconductor backside adhesion film test piece (prepared with this composite film) and the silicon wafer The fourth peel adhesive force measured in the peel test between the planes at 60°C, peel angle 180° and tensile speed 300 mm/min is even smaller.

Such a structure is suitable for bonding the present composite film to a semiconductor wafer as a work piece by using its semiconductor backside adhesive film, for example, after being heated to 60° C., it is peeled off from the same wafer. Therefore, it is suitable for secondary processing for bonding.

As described above, the dicing tape integrated semiconductor backside adhesion film of the present invention is suitable for ensuring good adhesion to semiconductor wafers, and has secondary processing properties for bonding.

With regard to this composite film, it is preferable to peel off at 25°C and peel off between the dicing tape of the third test piece (prepared with this composite film) and the semiconductor backside adhesive film after heat treatment at 80°C for 1 hour. The fifth peel adhesion force measured in a peel test conducted under the conditions of an angle of 180° and a tensile speed of 300 mm/min, after the bonding to the silicon wafer plane at 70°C and the subsequent 80°C for 1 hour The heat-treated third semiconductor backside adhesion film test piece (prepared with this composite film) and the silicon wafer plane are peeled under the conditions of 25°C, 180° peeling angle and 300 mm/min tensile speed The 6th peel adhesion measured is greater.

This structure is suitable for applying the composite film to the semiconductor wafer and the ring frame without offsetting, for example, by heating the composite film or the semiconductor backside adhesive film at 80°C and 1 hour. After this bonding, the present composite film or its semiconductor backside adhesive film is prevented from peeling off the semiconductor wafer.

Regarding this composite film, it is preferable to peel off at 60°C and peel off between the dicing tape of the fourth test piece (prepared with this composite film) and the semiconductor backside adhesive film after heat treatment at 80°C for 1 hour. The 7th peel adhesion force measured in the peel test under the conditions of an angle of 180° and a tensile speed of 300 mm/min, after the bonding to the silicon wafer plane at 70°C and the subsequent 80°C for 1 hour The heat-treated fourth semiconductor backside adhesion film test piece (prepared with this composite film) and the silicon wafer plane are peeled under the conditions of 60°C, 180° peeling angle and 300 mm/min tensile speed The 8th peel adhesion measured is greater.

Such a structure is suitable for applying the composite film to the semiconductor wafer and the ring frame without any offset, and then heat-treating the composite film or the semiconductor backside adhesive film at 80°C for 1 hour. After this bonding, the present composite film or its semiconductor backside adhesive film is prevented from peeling from the semiconductor wafer.

The first peel adhesive force is preferably 0.2 to 3 N/20 mm. The second peel adhesive force is preferably 3 N/20 mm or more. The third peel adhesive force is preferably 0.2 to 3 N/20 mm. The fourth peel adhesive force is preferably 0.2 N/20 mm or less. The fifth peel adhesive force is preferably 3 N/20 mm or less. The sixth peel adhesive force is preferably 3 N/20 mm or more. The seventh peel adhesive force is preferably 3 N/20 mm or less. The eighth peel adhesion force is preferably 3 N/20 mm or more. These constitutions are suitable for realizing the above-mentioned relationship of peel adhesion force.

1 and 2 show a composite film X of a dicing tape integrated semiconductor backside adhesive film as one embodiment of the present invention. FIG. 1 is a top view of the composite film X, and FIG. 2 is a schematic cross-sectional view of the composite film X. The composite film X has a laminated structure including the film 10 and the dicing tape 20. The film 10 is a semiconductor backside adhesive film of one embodiment of the present invention, and is a film bonded to the backside or backside that is the non-formed circuit surface of the semiconductor wafer as a workpiece. The dicing tape 20 has a laminated structure including a substrate 21 and an adhesive layer 22. The adhesive layer 22 has an adhesive surface 22a on the film 10 side. The film 10 is peelably adhered to the adhesive layer 22 or its adhesive surface 22a. In addition, the film 10 has a disk shape corresponding to a size of the semiconductor wafer as a workpiece, and the dicing tape 20 has a disk shape with a size exceeding the above-mentioned size.

The composite film X is used as follows, for example. First, the film 10 of the composite film X is bonded to the semiconductor wafer (bonding step). In this step, for a group of semiconductor wafers and a ring frame arranged in a state where the semiconductor wafer is surrounded by a ring frame, the dicing tape 20 or the area around the film 10 of the adhesive layer 22 is attached to the ring The composite film X can be pasted in a way that the film 10 is attached to the wafer. Then, in a state where the semiconductor wafer is held in the composite film X, for example, the semiconductor wafer is singulated into chips by blade dicing. Thereby, a semiconductor wafer with a protective film of the chip size derived from the film 10 (semiconductor backside adhesion film) on the back side, that is, a semiconductor wafer with a protective film is obtained. The chip is covered with a flip chip mounted on a specific substrate.

The film 10 which is an adhesive film for the back surface of a semiconductor has a laminated structure including a laser marking layer 11 and an adhesive layer 12. The laser marking layer 11 is located on the side of the dicing tape 20 in the film 10 and is in close contact with the dicing tape 20 or its adhesive layer 22. During the manufacturing process of the semiconductor device, laser marking is performed on the surface of the laser marking layer 11 on the side of the dicing tape 20. In this embodiment, the laser marking layer 11 is in a state where the thermosetting resin composition layer has been thermoset. The next layer 12 is located in the film 10 on the side where the workpiece is attached, and has a workpiece contact surface 12a. In this embodiment, it is a non-thermosetting resin composition layer with thermoplasticity. The film 10 having a laminated structure including the laser marking layer 11 and the adhesive layer 12 is a non-thermosetting type film having substantially no thermosetting properties.

The laser marking layer 11 in the film 10 may have a composition including a thermosetting resin and a thermoplastic resin as resin components, or may have a composition including a thermoplastic resin with a thermosetting functional group, which can be combined with a curing The agent reacts to produce a bond.

When the laser marking layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, the thermosetting resin may, for example, be epoxy resin, phenol resin, amino resin, unsaturated polyester resin, poly Urethane resin, silicone resin, and thermosetting polyimide resin. The laser marking layer 11 may contain one kind of thermosetting resin or two or more kinds of thermosetting resins. Epoxy resin is preferably used as the thermosetting resin in the laser marking layer 11 of the film 10. The reason is that it may become the object protected by the back surface protective film formed by the film 10 in the following manner, that is, the semiconductor chip The content of ionic impurities caused by corrosion tends to be small. In addition, as a curing agent for making the epoxy resin exhibit thermosetting properties, a phenol resin is preferable.

As the epoxy resin, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin Oxygen resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, sulphur type epoxy resin, phenol novolak type epoxy resin, o-cresol novolak type epoxy resin, trihydroxy Difunctional or multifunctional epoxy resins such as phenylmethane type epoxy resin and tetraphenol ethane type epoxy resin. As the epoxy resin, hydantoin type epoxy resin, triglycidyl isocyanurate type epoxy resin, and glycidylamine type epoxy resin may also be mentioned. In addition, the laser marking layer 11 may contain one type of epoxy resin or two or more types of epoxy resin.

Phenolic resins function as hardeners for epoxy resins. Examples of such phenol resins include phenol novolac type resins, phenol aralkyl resins, cresol novolac resins, and tertiary butyl phenol phenolic resins. Novolac type phenol resins such as varnish type resins and nonylphenol novolac type resins. Moreover, as this phenol resin, a resol-type phenol resin and polyhydroxystyrene, such as poly(p-hydroxystyrene), can also be mentioned. The phenol resin in the laser marking layer 11 is particularly preferably a phenol novolac type resin or a phenolic aralkyl resin. In addition, the laser marking layer 11 may contain one kind of phenol resin as the hardener of the epoxy resin, or may contain two or more kinds of phenol resin.

In the case where the laser marking layer 11 contains epoxy resin and phenol resin as its hardener, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalent relative to 1 equivalent of the epoxy group in the epoxy resin. It is preferable to mix two resins at a ratio of 0.8 to 1.2 equivalents. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenol resin sufficiently proceeds when the laser marking layer 11 is cured.

Regarding the content ratio of the total amount of thermosetting resin in the laser marking layer 11, from the viewpoint of properly curing the laser marking layer 11, it is preferably 25-60% by mass, more preferably 35-55% by mass .

The thermoplastic resin in the laser marking layer 11 is, for example, one that functions as an adhesive. When the laser marking layer 11 has a composition including a thermosetting resin and a thermoplastic resin, for example, acrylic resin may be mentioned. , Natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate Resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, saturated polyester such as polyethylene terephthalate or polybutylene terephthalate Resins, polyimide resins, and fluororesins. The laser marking layer 11 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the laser marking layer 11 in terms of less ionic impurities and higher heat resistance.

When the laser marking layer 11 contains acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. "(Meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid".

As the (meth)acrylate used to form the monomer unit of the acrylic resin, that is, the (meth)acrylate used as the constituent monomer of the acrylic resin, for example, alkyl (meth)acrylate, ( Cycloalkyl meth)acrylate and aryl (meth)acrylate. Examples of alkyl (meth)acrylates include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, and tertiary butyl (meth)acrylate. , Pentyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester ( Namely, lauryl ester), tridecyl ester, tetradecyl ester, cetyl ester, octadecyl ester, and eicosyl ester. As cycloalkyl (meth)acrylate, cyclopentyl and cyclohexyl (meth)acrylate can be mentioned, for example. The aryl (meth)acrylate may, for example, be phenyl (meth)acrylate and benzyl (meth)acrylate. As the constituent monomer of the acrylic resin, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. In addition, the acrylic resin can be obtained by polymerizing the raw material monomers used to form it. As the polymerization method, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization may be mentioned.

For example, for the modification of its cohesive force or heat resistance, the acrylic resin may also use one or two or more other monomers copolymerizable with (meth)acrylate as constituent monomers. Examples of such monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and Acrylonitrile. Examples of carboxyl group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. , And crotonic acid. As an acid anhydride monomer, maleic anhydride and itaconic anhydride are mentioned, for example. Examples of hydroxyl-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6 (meth)acrylate. -Hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and 4-hydroxymethyl (meth)acrylate Cyclohexyl) methyl ester. As the epoxy group-containing monomer, for example, glycidyl (meth)acrylate and glycidyl (meth)acrylate may be mentioned. As the sulfonic acid group-containing monomer, for example, styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide propyl Sulfonic acid, and (meth)acryloxy naphthalenesulfonic acid. As the phosphoric acid group-containing monomer, for example, 2-hydroxyethyl acryloyl phosphate may be mentioned.

When the laser marking layer 11 has a composition containing a thermoplastic resin with a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. As such a (meth)acrylate, for example, the same (meth)acrylate as described above as the constituent monomer of the acrylic resin contained in the laser marking layer 11 can be used. For example, in order to improve its cohesive force or heat resistance, the acrylic resin used to form the acrylic resin containing the thermosetting functional group may also contain one or two or more of those derived from copolymerizable (meth)acrylate Monomer units of other monomers. As such a monomer, for example, the monomers described above as other monomers that can be copolymerized with the (meth)acrylate used to form the acrylic resin in the laser marking layer 11 can be used. On the other hand, as a thermosetting functional group for forming the acrylic resin containing a thermosetting functional group, a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group can be mentioned, for example. Among these, glycidyl and carboxyl groups can be used favorably. That is, as the acrylic resin containing a thermosetting functional group, an acrylic resin containing a glycidyl group or an acrylic resin containing a carboxyl group can be preferably used. Furthermore, according to the type of thermosetting functional group in the acrylic resin containing the thermosetting functional group, a curing agent that can react with it is selected. When the thermosetting functional group of the acrylic resin containing the thermosetting functional group is a glycidyl group, as the curing agent, the same phenol resin as described above as the curing agent for epoxy resin can be used.

The composition for forming the laser marking layer 11 preferably contains a thermosetting catalyst. Regarding the blending of the thermosetting catalyst in the composition for forming the laser marking layer, it is preferable to sufficiently proceed the curing reaction of the resin component during curing of the laser marking layer 11 or to increase the curing reaction speed. As such a thermosetting catalyst, for example, an imidazole-based compound, a triphenylphosphine-based compound, an amine-based compound, and a trihaloborane-based compound may be mentioned. As the imidazole-based compound, for example, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methyl Imidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2- Methyl imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2 '-Methylimidazolyl-(1')]-Ethyl trimes 𠯤, 2,4-Diamino-6-[2'-Undecyl imidazolyl-(1')]-Ethyl trimes 𠯤、2,4-Diamino-6-[2'-Ethyl-4'-Methylimidazolyl-(1')]-Ethyl Tris 𠯤、2,4-Diamino-6-[ 2'-Methylimidazolyl-(1')]-Ethyl isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4 -Methyl-5-hydroxymethylimidazole. As the triphenylphosphine compound, for example, triphenylphosphine, tri(butylphenyl)phosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, diphenyltoluene Phosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. Triphenylphosphine compounds also include compounds having both a triphenylphosphine structure and a triphenylborane structure. As such compounds, for example, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetrap-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane . Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. As a trihaloborane compound, trichloroborane can be mentioned, for example. The composition for forming a laser marking layer may contain one type of thermosetting catalyst or two or more types of thermosetting catalyst.

The laser marking layer 11 may also contain fillers. The blending of the filler in the laser marking layer 11 is preferable in terms of adjusting the elastic modulus, the yield point strength, and the elongation at break of the laser marking layer 11. As the filler, an inorganic filler and an organic filler may be mentioned. As the constituent material of the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate crystals Whiskers, boron nitride, crystalline silicon dioxide, and amorphous silicon dioxide. As the constituent material of the inorganic filler, simple metals such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon, graphite, etc. may also be mentioned. As the constituent material of the organic filler, for example, polymethylmethacrylate (PMMA), polyimide, polyimide, polyether ether ketone, polyether imide, and polyester amide amine. The laser marking layer 11 may contain one kind of filler or two or more kinds of fillers. The filler may have various shapes such as spherical, needle-like, and flake-like shapes. When the laser marking layer 11 contains a filler, the average particle size of the filler is preferably 30-1000 nm, more preferably 40-700 nm, and more preferably 50-500 nm. That is, the laser marking layer 11 preferably contains a nanofiller. The configuration in which the laser marking layer 11 contains nano-fillers of such a particle size as the filler is preferable in terms of ensuring a high degree of separation for the film 10 to be small. The average particle diameter of the filler can be determined using, for example, a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Manufacturing Co., Ltd.). In addition, when the laser marking layer 11 contains a filler, the content of the filler is, for example, 30% by mass or more, preferably 40% by mass or more. When the laser marking layer 11 contains a filler, the content of the filler is preferably 70% by mass or less, more preferably 60% by mass or less.

The laser marking layer 11 contains a colorant in this embodiment. The colorant may be a pigment or a dye. The coloring agent may, for example, be a black coloring agent, a cyan coloring agent, a magenta coloring agent, and a yellow coloring agent. In terms of achieving high visibility of the information engraved on the laser marking layer 11 by the laser mark, the laser marking layer 11 preferably contains a black colorant. Examples of black colorants include azo pigments such as carbon black, graphite, copper oxide, manganese dioxide, azomethine azo black, aniline black, perylene black, titanium black, and flower Cyan, activated carbon, ferrite, magnetite, chromium oxide, iron oxide, molybdenum disulfide, composite oxide black pigment, anthraquinone organic black dye, and azo organic black dye. Examples of carbon black include furnace black, chimney black, acetylene black, thermal black, and lamp black. Examples of black colorants include CI Solvent Black 3, CI Solvent Black 7, CI Solvent Black 22, CI Solvent Black 27, CI Solvent Black 29, CI Solvent Black 34, CI Solvent Black 43, and CI Solvent Black 70. As the black colorant, C.I. Direct Black 17, C.I. Direct Black 19, C.I. Direct Black 22, C.I. Direct Black 32, C.I. Direct Black 38, C.I. Direct Black 51, and C.I. Direct Black 71 may also be exemplified. Examples of black colorants include CI Acid Black 1, CI Acid Black 2, CI Acid Black 24, CI Acid Black 26, CI Acid Black 31, CI Acid Black 48, CI Acid Black 52, CI Acid Black 107 , CI Acid Black 109, CI Acid Black 110, CI Acid Black 119, and CI Acid Black 154. As the black coloring agent, C.I. Disperse Black 1, C.I. Disperse Black 3, C.I. Disperse Black 10, and C.I. Disperse Black 24 may also be mentioned. As the black colorant, C.I. Pigment Black 1 and C.I. Pigment Black 7 may also be mentioned. The laser marking layer 11 may contain one coloring agent or two or more coloring agents. Furthermore, the content of the coloring agent in the laser marking layer 11 is preferably 0.5% by weight or more, more preferably 1% by weight or more. The content of the coloring agent in the laser marking layer 11 is preferably 10% by weight or less, more preferably 8% by weight or less. These constitutions related to the content of the coloring agent are preferable in terms of achieving higher visibility of the information engraved on the laser marking layer 11 by the laser marking.

The laser marking layer 11 may also contain one or more other components as needed. Examples of the other components include flame retardants, silane coupling agents, and ion scavengers.

The thickness of the laser marking layer 11 is, for example, 5 to 35 μm.

The adhesive layer 12 of the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have a composition containing no thermosetting resin.

As the thermosetting resin when the adhesive layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, for example, epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyamine Carbamate resin, silicone resin, and thermosetting polyimide resin. As the thermosetting resin in the adhesive layer 12, specifically, the thermosetting resin described above when the laser marking layer 11 has a composition including a thermosetting resin and a thermoplastic resin . The subsequent layer 12 may contain one type of thermosetting resin or two or more types of thermosetting resin. Epoxy resin is preferably used as the thermosetting resin in the adhesive layer 12 of the film 10, and the reason is that it may become a semiconductor chip to be protected by the back surface protective film formed by the film 10 in the following manner The content of ionic impurities, etc., which are the cause of corrosion, tends to be less.

The thermoplastic resin in the subsequent layer 12 is, for example, a function of an adhesive. As the thermoplastic resin in the adhesive layer 12, for example, the thermoplastic resin described above as the case where the laser marking layer 11 has a composition including a thermosetting resin and a thermoplastic resin. The subsequent layer 12 may contain one kind of thermoplastic resin or two or more kinds of thermoplastic resins. Acrylic resin has less ionic impurities and higher heat resistance, so it is preferable as the thermoplastic resin in the adhesive layer 12.

When the adhesive layer 12 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. As the (meth)acrylate used to form the monomer unit of the acrylic resin, for example, the constitutional monomer of the acrylic resin can be used when the laser marking layer 11 contains acrylic resin as the thermoplastic resin. The (meth)acrylates mentioned above. As a constituent monomer of the acrylic resin in the adhesive layer 12, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. In addition, for example, in order to improve its cohesive force or heat resistance, the acrylic resin may have one or two or more other monomers copolymerizable with (meth)acrylate as a constituent monomer. As such a monomer, for example, the monomers described above as other monomers that can be copolymerized with the (meth)acrylate used to form the acrylic resin in the laser marking layer 11 can be used.

The subsequent layer 12 may also contain fillers. The blending of the filler in the adhesive layer 12 is preferable in terms of adjusting the elastic modulus of the adhesive layer 12, the strength of the yield point, the elongation at break, and other physical properties. As the filler in the adhesive layer 12, for example, the filler described above as the filler in the laser marking layer 11 can be cited. The subsequent layer 12 may contain one kind of filler or two or more kinds of fillers. The filler may have various shapes such as spherical, needle-like, and flake-like shapes. When the subsequent layer 12 contains a filler, the average particle size of the filler is preferably 30-500 nm, more preferably 40-400 nm, and more preferably 50-300 nm. That is, the adhesive layer 12 preferably contains a nanofiller. The following layer 12 contains nanofillers of this particle size as the filler in terms of avoiding or suppressing damage to the workpiece attached or mounted on the film 10 due to the filler contained in the adhesive layer 12. It is preferable in terms of ensuring a high breaking property of the film 10 for small pieces. In addition, when the adhesive layer 12 contains a filler, the content of the filler is, for example, 30% by mass or more, preferably 40% by mass or more, and more preferably 50% by mass or more. When the subsequent layer 12 contains a filler, the content of the filler is preferably less than 75% by mass.

The subsequent layer 12 may also contain a colorant. As the coloring agent in the adhesive layer 12, for example, the coloring agent in the laser marking layer 11 can be exemplified as described above. In terms of ensuring a high contrast between the laser-marked engraved part on the laser marking layer 11 side of the film 10 and the part other than the part to achieve good visibility of the engraved information, then The layer 12 preferably contains a black colorant. The subsequent layer 12 may contain one coloring agent or two or more coloring agents. In addition, the content of the coloring agent in the adhesive layer 12 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and even more preferably 2% by weight or more. The content of the coloring agent in the subsequent layer 12 is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These constitutions related to the content of the coloring agent are preferable in terms of achieving the above-mentioned good visibility for the engraved information obtained by the laser marking.

The subsequent layer 12 may optionally contain one or more than two other components. As this other component, a flame retardant, a silane coupling agent, and an ion scavenger are mentioned, for example.

The thickness of the subsequent layer 12 is, for example, 5-20 μm.

The thickness of the film 10 having the above-mentioned structure is, for example, 10-40 μm.

The substrate 21 of the dicing tape 20 of the composite film X (chip dicing tape integrated semiconductor backside adhesion film) is an element that functions as a support in the dicing tape 20 or the composite film X, for example, a plastic film. As the constituent material of the base material 21, for example, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, polyamide, Fully aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenyl sulfide, aromatic polyamide, fluororesin, cellulose resin, and silicone resin. Examples of polyolefins include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, Homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene- Butene copolymer, and ethylene-hexene copolymer. As the polyester, for example, polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate may be mentioned. The substrate 21 may include one material or two or more materials. The substrate 21 may have a single-layer structure or a multilayer structure. In addition, when the substrate 21 includes a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film. The substrate 21 may include one material or two or more materials. The substrate 21 may have a single-layer structure or a multilayer structure. When the adhesive layer 22 on the substrate 21 is UV curable as described below, the substrate 21 preferably has UV transparency.

It is also possible to perform physical treatment, chemical treatment, or primer treatment on the surface of the substrate 21 on the adhesive layer 22 side to improve the adhesion with the adhesive layer 22. The physical treatment may, for example, be corona treatment, plasma treatment, sand pad processing treatment, ozone exposure treatment, flame exposure treatment, high voltage electric shock exposure treatment, and ionizing radiation treatment. As the chemical treatment, for example, chromic acid treatment may be mentioned.

Regarding the thickness of the substrate 21, from the viewpoint of ensuring the strength for the substrate 21 to function as a support for the dicing tape 20 or the composite film X, it is preferably 40 μm or more, and more preferably 50 μm or more. More preferably, it is 60 μm or more. In addition, from the viewpoint of achieving moderate flexibility in the dicing tape 20 or the composite film X, the thickness of the substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less.

The adhesive layer 22 of the dicing tape 20 contains an adhesive. The adhesive can be an adhesive that can consciously reduce the adhesive force by an external action (adhesive that can be reduced), or an adhesive that hardly reduces the adhesive force by an external action. (Non-reducing adhesive).

As the adhesive agent capable of reducing the adhesive force, for example, an adhesive agent that can be cured by radiation (radiation-curable adhesive agent). In the adhesive layer 22 of this embodiment, one type of adhesive with reduced adhesive force may be used, or two or more types of adhesives with reduced adhesive force may be used.

As the radiation-curable adhesive used for the adhesive layer 22, for example, an adhesive that is cured by irradiation of electron beams, ultraviolet rays, α rays, β rays, γ rays, or X-rays may be particularly preferred. Use the type of adhesive (UV-curable adhesive) that is cured by ultraviolet radiation.

As the radiation curable adhesive used for the adhesive layer 22, for example, a base polymer containing an acrylic polymer such as an acrylic adhesive, and radiation polymerization having a functional group such as a radiation polymerizable carbon-carbon double bond can be mentioned. Additive radiation-curable adhesives with flexible monomer components or oligomer components.

It is preferable that the said acrylic polymer contains the monomer unit derived from (meth)acrylate at the mass ratio at most. The (meth)acrylate used to form the monomer unit of the acrylic polymer, that is, the (meth)acrylate used as the constituent monomer of the acrylic polymer, for example: (meth)acrylate alkyl Ester, cycloalkyl (meth)acrylate, and aryl (meth)acrylate. More specifically, the acrylic resin in the laser marking layer 11 of the film 10 can be exemplified as described above. The same as (meth)acrylate. As the constituent monomer of the acrylic polymer, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. In addition, in terms of adequately expressing basic properties such as adhesiveness by (meth)acrylate in the adhesive layer 22, the ratio of (meth)acrylate in the entire monomer constituting the acrylic polymer For example, it is 40% by mass or more.

For example, for the modification of its cohesive force or heat resistance, the acrylic polymer may also contain monomer units derived from one or more other monomers copolymerizable with (meth)acrylate. Examples of such monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and Acrylonitrile, more specifically, can be exemplified as other monomers that can be copolymerized with the (meth)acrylate used to form the acrylic resin in the laser marking layer 11 of the film 10 as described above.

In order to form a crosslinked structure in the polymer backbone, the acrylic polymer may also contain monomer units derived from multifunctional monomers copolymerizable with monomer components such as (meth)acrylate. As such a multifunctional monomer, for example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate , Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, neopentyl glycol tri(meth)acrylate, dineopentyl Tetraol hexa (meth)acrylate, polyglycidyl (meth)acrylate, polyester (meth)acrylate, and (meth)acrylate urethane. "(Meth)acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one type of polyfunctional monomer may be used, or two or more types of polyfunctional monomer may be used. In terms of adequately expressing basic characteristics such as adhesiveness by (meth)acrylate in the adhesive layer 22, the ratio of the polyfunctional monomer in the entire monomer constituting the acrylic polymer is 40, for example. Less than mass%.

The acrylic polymer can be obtained by polymerizing the raw material monomers used to form it. As the polymerization method, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization may be mentioned.

In order to increase the number average molecular weight of the base polymer such as acrylic polymer, the adhesive layer 22 or the adhesive used to form it may contain, for example, an external crosslinking agent. Examples of the external crosslinking agent for reacting with base polymers such as acrylic polymers to form a crosslinked structure include: polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine crosslinking Agent. The content of the external crosslinking agent in the adhesive layer 22 or the adhesive used to form it is, for example, 0.1-5 parts by mass relative to 100 parts by mass of the base polymer.

Examples of the radiation polymerizable monomer component used to form the radiation curable adhesive include: (meth)acrylate urethane, trimethylolpropane tri(meth)acrylate, and neopentyl tetrakis Alcohol tri(meth)acrylate, neopentylerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dineopentaerythritol hexa(meth)acrylate, and 1,4 -Butanediol di(meth)acrylate. Examples of the radiation polymerizable oligomer component used to form the radiation curable adhesive include various urethane, polyether, polyester, polycarbonate, polybutadiene, etc. An oligomer with a molecular weight of about 100 to 30,000 is more suitable. The total content of the radiation polymerizable monomer components or oligomer components in the radiation curable adhesive can be determined within a range that can appropriately reduce the adhesive force of the formed adhesive layer 22, as opposed to acrylic polymers, etc. 100 parts by mass of the base polymer is, for example, 5 to 500 parts by mass. In addition, as an additive type radiation-curable adhesive, for example, the one disclosed in Japanese Patent Laid-Open No. 60-196956 can be used.

As the radiation-curable adhesive used in the adhesive layer 22, for example, one containing a functional group such as a radiation polymerizable carbon-carbon double bond in the polymer side chain, polymer main chain, or polymer main chain terminal Intrinsic radiation-curing adhesive based on polymer. Such an intrinsic radiation-curable adhesive is preferable in terms of suppressing the unintentional time-dependent change in adhesive properties caused by the movement of low molecular weight components in the formed adhesive layer 22.

As the base polymer contained in the internal radiation-curable adhesive, one having an acrylic polymer as a basic skeleton is preferred. As the acrylic polymer forming such a basic skeleton, the aforementioned acrylic polymer can be used. As a method of introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer, for example, the following method can be exemplified: a raw material monomer containing a monomer having a specific functional group (first functional group) is copolymerized to obtain an acrylic The polymer, after that, a compound having a specific functional group (second functional group) that can react with the first functional group to bond and a radiation polymerizable carbon-carbon double bond is used to maintain the carbon-carbon double bond In the case of radiation polymerizability, condensation reaction or addition reaction of acrylic polymer is carried out.

As the combination of the first functional group and the second functional group, for example, a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridinyl group, an aziridinyl group and a carboxyl group, a hydroxyl group and an isocyanate group may be mentioned. , Isocyanate and hydroxyl. Among these combinations, from the viewpoint of ease of reaction tracking, a combination of a hydroxyl group and an isocyanate group, or a combination of an isocyanate group and a hydroxyl group is preferred. In addition, the production of a polymer with a highly reactive isocyanate group is technically difficult, so from the viewpoint of the ease of production or purchase of acrylic polymer, the above-mentioned acrylic polymer side is more preferable When the first functional group is a hydroxyl group and the second functional group is an isocyanate group. In this case, as an isocyanate compound having both a radiation polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound containing a radiation polymerizable unsaturated functional group, for example: Allyl isocyanate, 2-methacryloyl oxyethyl isocyanate (MOI), and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

系化合物、樟腦醌、鹵代酮、醯基膦氧化物、及醯基磷酸酯。作為α-酮醇系化合物，例如可例舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可例舉：甲氧基苯乙酮、2,2-二甲氧基-1,2-二苯乙烷-1-酮、2,2-二乙氧基苯乙酮、及2-甲基-1-[4-(甲硫基)-苯基]-2-𠰌啉基丙烷-1。作為安息香醚系化合物，例如可例舉：安息香乙醚、安息香異丙醚、及茴香偶姻甲醚。作為縮酮系化合物，例如可例舉苯偶醯二甲基縮酮。作為芳香族磺醯氯系化合物，例如可例舉2-萘磺醯氯。作為光活性肟系化合物，例如可例舉：1-苯基-1,2-丙烷二酮-2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可例舉：二苯甲酮、苯甲醯苯甲酸、及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫𠮿

系化合物，例如可例舉：9-氧硫𠮿

、2-氯-9-氧硫𠮿

、2-甲基-9-氧硫𠮿

、2,4-二甲基-9-氧硫𠮿

、異丙基-9-氧硫𠮿

、2,4-二氯-9-氧硫𠮿

、2,4-二乙基-9-氧硫𠮿

、及2,4-二異丙基-9-氧硫𠮿

。黏著劑層22中之放射線硬化性黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份，例如為0.05～20質量份。The radiation-curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, and two Benzophenone compounds, 9-oxysulfur𠮿

Series compounds, camphorquinone, halogenated ketones, acylphosphine oxides, and acylphosphates. As the α-ketol compound, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylbenzene Ethyl ketone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexylphenylketone. As the acetophenone compound, for example, methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxybenzene Ethyl ketone, and 2-methyl-1-[4-(methylthio)-phenyl]-2-𠰌olinylpropane-1. As the benzoin ether-based compound, for example, benzoin ethyl ether, benzoin isopropyl ether, and anisin methyl ether may be mentioned. The ketal compound may, for example, be benzil dimethyl ketal. As the aromatic sulfonyl chloride compound, for example, 2-naphthalenesulfonyl chloride may be mentioned. As a photoactive oxime type compound, 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime is mentioned, for example. As the benzophenone compound, for example, benzophenone, benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone may be mentioned. As 9-oxysulfur 𠮿

Series compounds, for example: 9-oxysulfur 𠮿

, 2-chloro-9-oxysulfur 𠮿

, 2-Methyl-9-oxysulfur 𠮿

, 2,4-Dimethyl-9-oxysulfur 𠮿

, Isopropyl-9-oxysulfur 𠮿

, 2,4-Dichloro-9-oxysulfur 𠮿

, 2,4-Diethyl-9-oxysulfur 𠮿

, And 2,4-Diisopropyl-9-oxysulfur 𠮿

. The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as acrylic polymer.

As the above-mentioned non-adhesive adhesive, for example, the radiation-curable adhesive described above is applied to the above-mentioned radiation-curable adhesive with respect to the adhesive with reduced adhesive force, or the so-called The pressure sensitive adhesive, etc. Radiation-curable adhesives are different depending on the type and content of the polymer components. Even when the adhesive force is reduced by radiation curing, the adhesiveness caused by the polymer components can also be expressed. The state of use shows the adhesive force that can be used to adhere and maintain the adherend. In the adhesive layer 22 of this embodiment, one type of non-adhesive adhesive can be used, or two or more types of non-adhesive adhesives can be used.

On the other hand, as the pressure-sensitive adhesive used for the adhesive layer 22, for example, an acrylic adhesive or a rubber adhesive using an acrylic polymer as a base polymer can be used. When the adhesive layer 22 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer that is the base polymer of the acrylic adhesive preferably contains (meth)acrylic acid derived from (meth)acrylic acid in a mass ratio The ester has the most monomer units. As such an acrylic polymer, for example, the acrylic polymer described above with respect to the radiation curable adhesive may be mentioned.

The adhesive used for the adhesive layer 22 or forming the adhesive layer 22 may contain a crosslinking accelerator, an adhesion imparting agent, an anti-aging agent, a coloring agent such as a pigment or a dye, etc. in addition to the above-mentioned components. The colorant may also be a compound that is colored by irradiation with radiation. As such a compound, for example, a leuco dye may be mentioned.

The thickness of the adhesive layer 22 is, for example, 2-20 μm. For example, when the adhesive layer 22 contains a radiation-curable adhesive, such a configuration is better in terms of obtaining the balance of the adhesive force of the adhesive layer 22 to the film 10 before and after radiation curing.

Regarding the composite film X, which is an adhesive film on the back side of a semiconductor with integrated dicing tape, compared to the first test piece (prepared by composite film X), the film 10 and the dicing tape 20 are at 25°C and the peeling angle is 180° The first peel adhesion force measured in the peel test under the conditions of the tensile speed 300 mm/min, the first semiconductor backside adhesion film test piece (using composite film X or The second peel adhesion force measured in the peel test between the film 10 prepared) and the silicon wafer plane under the conditions of 25°C, 180° peel angle and 300 mm/min stretching speed is greater. The first test piece is the prepared test piece cut from the composite film X. The first semiconductor backside adhesive film test piece is peeled off the film 10 from the composite film X, a backing tape is attached to the surface of the side exposed by the peeling, and the prepared test piece is cut out from the attached body. The second peeling adhesive force is equivalent to the peeling adhesive force between the workpiece contact surface 12a of the film 10 (semiconductor back contact adhesive film) of the composite film X and the silicon wafer plane. In addition, in this embodiment, the peeling adhesive force to the silicon wafer plane refers to the peeling adhesive force to the silicon wafer plane polished with the grinding material of No. 2000.

This structure is suitable for ensuring good adhesion to the same wafer at room temperature and its vicinity after the composite film X is attached to the semiconductor wafer as a workpiece by using the film 10 thereof.

Regarding the composite film X, compared to the second test piece (prepared by the composite film X) between the film 10 and the dicing tape 20, it was performed under the conditions of 60°C, peeling angle 180°, and stretching speed 300 mm/min The third peel adhesion force measured in the peel test, the second semiconductor backside adhesion film test piece (prepared by composite film X or film 10) and the silicon wafer plane bonded to the silicon wafer plane at 70°C Among them, the fourth peel adhesive force measured in the peel test conducted under the conditions of 60°C, peel angle 180° and tensile speed 300 mm/min is even smaller. The second test piece is a prepared test piece cut from the composite film X. The second semiconductor backside adhesive film test piece is peeled off the film 10 from the composite film X, a backing tape is attached to the surface of the side exposed by the peeling, and the prepared test piece is cut out from the attached body. The fourth peeling adhesive force is equivalent to the peeling adhesive force between the workpiece contact surface 12a of the film 10 (semiconductor backside contact film) of the composite film X and the silicon wafer plane.

Such a structure is suitable for peeling off the composite film X from the semiconductor wafer as a workpiece after bonding the composite film X with its film 10, for example, heating the wafer to 60°C, and is therefore suitable for secondary processing for bonding.

As mentioned above, the composite film X is suitable for ensuring good adhesion to the semiconductor wafer and has secondary processing properties for bonding.

In this embodiment, regarding the composite film X, compared to the temperature between the film 10 and the dicing tape 20 of the third test piece (prepared by the composite film X) subjected to a heat treatment at 80°C for 1 hour at 25°C, The fifth peel adhesion measured in the peel test under the conditions of a peeling angle of 180° and a tensile speed of 300 mm/min, after the bonding to the silicon wafer plane at 70°C and the subsequent 80°C for 1 hour The heat-treated third semiconductor backside adhesive film test piece (prepared by composite film X or its film 10) and the silicon wafer plane under the conditions of 25°C, peeling angle 180° and stretching speed 300 mm/min The sixth peel adhesion measured in the peel test performed was greater. The third test piece is a prepared test piece cut from the composite film X. The third semiconductor backside adhesive film test piece is peeled off the film 10 from the composite film X, a backing tape is attached to the surface of the side exposed by the peeling, and the prepared test piece is cut out from the attached body. The sixth peeling adhesive force is equivalent to the peeling adhesive force between the workpiece contact surface 12a of the film 10 (semiconductor backside contact film) of the composite film X and the silicon wafer plane.

Such a configuration is suitable for bonding the composite film X to the semiconductor wafer and the ring frame without offset, for example, by heating the composite film X or the film 10 under conditions of 80°C and 1 hour to suppress After the bonding, the composite film X (die-cut tape-integrated semiconductor backside adhesion film) or the film 10 is peeled off from the semiconductor wafer.

In this embodiment, regarding the composite film X, compared to the temperature between the film 10 and the dicing tape 20 of the fourth test piece (prepared by the composite film X) which has been heated at 80°C for 1 hour, the temperature is 60°C, The 7th peel adhesion force measured in the peel test under the conditions of a peeling angle of 180° and a tensile speed of 300 mm/min, after the bonding to the silicon wafer plane at 70°C and the subsequent 80°C for 1 hour The heat treatment between the fourth semiconductor backside adhesive film test piece (prepared by composite film X or its film 10) and the silicon wafer plane at 60°C, peeling angle 180°, and stretching speed 300 mm/min The seventh peel adhesion measured in the peel test performed was greater. The fourth test piece is a test piece prepared by cutting from the composite film X. The fourth semiconductor backside adhesive film test piece is peeled off the film 10 from the composite film X, a backing tape is attached to the surface of the side exposed by the peeling, and the prepared test piece is cut out from the attached body. The eighth peeling adhesive force is equivalent to the peeling adhesive force between the workpiece contact surface 12a of the film 10 (semiconductor backside contact film) of the composite film X and the silicon wafer plane.

Such a configuration is suitable for bonding the composite film X to a semiconductor wafer and a ring frame without offsetting, for example, by heating the composite film X or the film 10 under conditions of 80°C and 1 hour to suppress After the bonding, the composite film X (die-cut tape integrated semiconductor backside adhesion film) or the film 10 is peeled off from the semiconductor wafer.

The above-mentioned first peel adhesion is preferably 0.2 to 3 N/20 mm. The second peel adhesive force is preferably 3 N/20 mm or more. The third peel adhesive force is preferably 0.2 to 3 N/20 mm. The fourth peel adhesive force is preferably 0.2 N/20 mm or less. The fifth peel adhesive force is preferably 3 N/20 mm or less. The sixth peel adhesion force is preferably 3 N/20 mm or more. The seventh peel adhesive force is preferably 3 N/20 mm or less. The eighth peel adhesion force is preferably 3 N/20 mm or more. These constitutions are suitable for realizing the above-mentioned relationship of peel adhesion force.

The adjustment of the peel adhesion between the film 10 and the dicing tape 20 of the composite film X can be adjusted by, for example, the composition of the monomer composition of the acrylic polymer and other polymers contained in the film 10 or the laser marking layer 11, And the adjustment of the monomer composition of the acrylic polymer and other polymers in the adhesive layer 22 of the dicing tape 20 and the adjustment of the content of the crosslinking agent are performed. In addition, the adjustment of the peel adhesion force between the workpiece contact surface 12a of the film 10 and the plane of the silicon wafer can be adjusted by, for example, the composition of the monomer composition of the acrylic polymer and other polymers in the film 10 or its adhesive layer 12. Adjust the content of fillers such as inorganic fillers.

The composite film X having the above-mentioned configuration can be produced as follows, for example.

In the production of the film 10 of the composite film X, first, the film for forming the laser marking layer 11 and the film for forming the adhesive layer 12 are respectively produced. The film forming the laser marking layer 11 can be produced by coating the resin composition for forming the laser marking layer on a specific spacer to form a resin composition layer, and then heating the composition The layer is dry and hardened. As the separator, for example, a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent can be mentioned. Plastic film or paper with surface coating. As a coating method of the resin composition, roll coating, screen coating, and gravure coating can be mentioned, for example. In the production of the film forming the laser marking layer 11, the heating temperature is, for example, 90 to 160° C., and the heating time is, for example, 2 to 4 minutes. On the other hand, the film forming the adhesive layer 12 can be produced by applying a resin composition for forming the adhesive layer on a specific separator to form a resin composition layer, and then heating the composition The layer is dry. In the production of the film forming the adhesive layer 12, the heating temperature is, for example, 90 to 150°C, and the heating time is, for example, 1 to 2 minutes. The above-mentioned two kinds of films can be produced in a form accompanied by spacers respectively in the above manner. Then, the exposed surfaces of these films are bonded to each other. Thereby, a film 10 (with spacers on both sides) having a laminated structure of the laser marking layer 11 and the adhesive layer 12 is produced.

Regarding the dicing tape 20 of the composite film X, it can be produced by providing an adhesive layer 22 on the prepared substrate 21. For example, the base material 21 made of resin can be formed by calendering a film method, a casting method in an organic solvent, an expansion extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, etc. Manufactured by the film forming method. The film or substrate 21 after film formation may be subjected to specific surface treatment as needed. In the formation of the adhesive layer 22, for example, after the adhesive composition for forming the adhesive layer is prepared, first, the composition is coated on the substrate 21 or a specific separator to form the adhesive composition layer. As a coating method of the adhesive composition, roll coating, screen coating, and gravure coating can be mentioned, for example. Then, in the adhesive composition layer, it is dried as necessary by heating, and a cross-linking reaction is generated as necessary. The heating temperature is, for example, 80 to 150°C, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the separator, the adhesive layer 22 with the separator is attached to the base 21, and then the separator is peeled off. Thereby, the dicing tape 20 having the laminated structure of the base material 21 and the adhesive layer 22 can be manufactured.

In the production of the composite film X, the film 10 accompanied by the spacer is punched into a disc shape with a specific diameter, and then the spacer is peeled off from the laser marking layer 11 side of the film 10, and the film 10 The laser marking layer 11 side is attached to the adhesive layer 22 side of the dicing tape 20. The bonding temperature is, for example, 30 to 50°C, and the bonding pressure (line pressure) is, for example, 0.1 to 20 kgf/cm. Then, in this way, the dicing tape 20 attached to the film 10 is punched into a disc shape with a specific diameter in such a way that the center of the dicing tape 20 is consistent with the center of the film 10.

The composite film X can be produced in the above manner. Regarding the separator, when the composite film X is used, it is peeled off from the film.

The film 10 may have a single-layer structure instead of the multilayer structure described above. When the film 10 has a single layer structure, the film 10 is a thermosetting resin composition layer in this embodiment, that is, a thermosetting layer in an uncured state or a semi-cured state. When the film 10 has a single-layer structure, laser marking is performed on the surface of the film 10 on the side of the dicing tape 20 during the manufacturing process of the semiconductor device. Such a single-layer film 10 can be produced, for example, by coating the resin composition used to form the laser marking layer 11 on a specific separator to form a resin composition layer, and then, without using When the composition layer is completely hardened, it is heated and dried.

As the thermosetting resin when the film 10 has a composition containing a thermosetting resin and a thermoplastic resin, for example, epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane Ester resin, silicone resin, and thermosetting polyimide resin. The film 10 may contain one type of thermosetting resin or two or more types of thermosetting resin. The epoxy resin in the film 10 may be, for example, the epoxy resin described above as the thermosetting resin when the laser marking layer 11 has a composition including a thermosetting resin and a thermoplastic resin. Regarding the content ratio of the total amount of thermosetting resin in the film 10 when the film 10 has a single-layer structure, from the viewpoint of properly curing the film 10, it is preferably 20 to 45% by mass, more preferably 25 ～40% by mass.

The thermoplastic resin in the film 10 is, for example, a function of an adhesive. As the thermoplastic resin when the film 10 has a composition including a thermosetting resin and a thermoplastic resin, for example, the thermoplastic resin when the laser marking layer 11 has a composition including a thermosetting resin and a thermoplastic resin can be exemplified. Those mentioned above. The film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins.

When the film 10 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. As the (meth)acrylate used to form the monomer unit of the acrylic resin, for example, the constitutional monomer of the acrylic resin can be used when the laser marking layer 11 contains acrylic resin as the thermoplastic resin. The (meth)acrylates mentioned above. As the constituent monomer of the acrylic resin in the film 10, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. In addition, for example, in order to improve its cohesive force or heat resistance, the acrylic resin may have one or two or more other monomers copolymerizable with (meth)acrylate as a constituent monomer. As such a monomer, for example, the monomers described above as other monomers that can be copolymerized with the (meth)acrylate used to form the acrylic resin in the laser marking layer 11 can be used.

The film 10 may also contain fillers. The blending of the filler in the film 10 is preferable in terms of adjusting the elastic modulus of the film 10, the strength at the yield point, and the elongation at break. As the filler in the film 10, for example, the filler described above as the filler in the laser marking layer 11 can be cited. The film 10 may contain one kind of filler or two or more kinds of fillers. The filler may have various shapes such as spherical, needle-like, and flake-like shapes. When the film 10 contains a filler, the average particle diameter of the filler is preferably 30-1000 nm, more preferably 40-700 nm, and more preferably 50-500 nm. That is, the film 10 preferably contains a nanofiller. The composition of the film 10 containing nanofillers of this particle size as the filler is preferable in terms of avoiding or suppressing damage to the work piece attached or mounted on the film 10 due to the filler contained in the film 10. The modified film 10 is better in terms of ensuring higher breaking properties. In addition, when the film 10 contains a filler, the content of the filler is, for example, 30% by mass or more, preferably 40% by mass or more, and more preferably 50% by mass or more. When the film 10 contains a filler, the content of the filler is preferably less than 75% by mass.

When the film 10 has a single-layer structure, the film 10 contains a colorant. As the coloring agent in the film 10, for example, the coloring agent in the laser marking layer 11 can be exemplified as described above. In terms of ensuring a high contrast between the laser-marked engraved part on the laser marking layer 11 side of the film 10 and the part other than the part to achieve good visibility of the engraved information, the film 10 preferably contains a black colorant. The film 10 may contain one coloring agent or two or more coloring agents. In addition, the content of the coloring agent in the film 10 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and even more preferably 2% by weight or more. The content of the coloring agent in the film 10 is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These constitutions related to the content of the coloring agent are preferable in terms of achieving the above-mentioned good visibility for the engraved information obtained by the laser marking.

The film 10 may also contain one or two or more other components as needed. Examples of the other components include flame retardants, silane coupling agents, and ion scavengers.

When the film 10 has a single-layer structure, the thickness of the film 10 is, for example, 5-40 μm.

3 to 7 show an example of a method of manufacturing a semiconductor device using the composite film X described above.

In this semiconductor device manufacturing method, first, as shown in FIGS. 3(a) and 3(b), the wafer W is thinned by grinding (wafer thinning step). Grinding processing can be performed using a grinding processing device equipped with a grinding grindstone. The wafer W is a semiconductor wafer and has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. The second surface Wb is the so-called back surface or back surface. In this step, after bonding the wafer processing tape T1 with the adhesive surface T1a to the first surface Wa side of the wafer W, proceed from the second surface Wb with the wafer W held on the wafer processing tape T1 The grinding process is performed until the wafer W reaches a specific thickness, and a thinned wafer 30 is obtained.

Then, as shown in FIG. 4( a ), the composite film X is bonded to the wafer 30 and the ring frame 41. Specifically, for the wafer 30 held by the wafer processing tape T1 and the ring frame 41 arranged so as to surround it, the film 10 of the composite film X is attached to the wafer 30, and the dicing tape 20 Or the adhesive layer 22 is attached to the ring frame 41 to perform the lamination of the composite film X. After that, as shown in FIG. 4( b ), the wafer processing tape T1 is peeled off from the wafer 30.

Then, the laser marking layer 11 of the film 10 of the composite film X is irradiated with a laser from the substrate 21 side of the dicing tape 20 to perform laser marking (laser marking step). With the laser mark, various information such as text information or graphic information is printed on each semiconductor element that is subsequently singulated into a semiconductor chip. In this step, in a laser marking process, many semiconductor elements in the wafer 30 can be laser marked at once and efficiently. As the laser used in this step, for example, gas lasers and solid lasers can be cited. Examples of gas lasers include carbon dioxide lasers (CO ₂ lasers) and excimer lasers. As the solid laser, for example, a Nd:YAG laser can be cited.

Then, after attaching the ring frame 41 to the adhesive layer 22 of the composite film X, the composite film X with the ring frame 41 is held on the holder 42 of the device, and then, as shown in FIG. 5, by A cutting blade equipped with a cutting device performs cutting processing (cutting step). In FIG. 5, the cut part is shown schematically by a thick solid line. In this step, the wafer 30 is singulated into a wafer 31, and the film 10 of the composite film X is cut into small pieces of film 10'. Thereby, a wafer 31 accompanied by a film 10' for forming a protective film on the back of the wafer, that is, a wafer 31 with a film 10', is obtained.

When the adhesive layer 22 of the dicing tape 20 contains a radiation-curable adhesive, it is also possible to irradiate the adhesive layer 22 from the substrate 21 side with radiation such as ultraviolet rays after the above-mentioned cutting step instead of during the manufacturing process of the composite film X The above-mentioned radiation exposure. The cumulative amount of irradiation light is, for example, 50 to 1000 mJ/cm ² . The area irradiated in the composite film X as a measure for reducing the adhesive force of the adhesive layer 22 is, for example, as shown in FIG. 2, the area R in the area where the adhesive layer 22 is attached to the film 10 except for its peripheral edge.

Then, if necessary, go through a cleaning step of washing the wafer 31 side of the dicing tape 20 with the wafer 31 with the film 10' by using a cleaning solution such as water, or to expand the separation between the wafers 31 with the film 10' After the step of expanding the distance, as shown in FIG. 6, the wafer 31 with the film 10 ′ is picked up from the dicing tape 20 (pickup step). For example, on the basis of holding the composite film X with the ring frame 41 in the holder 42 of the device, for the pick-up target, that is, the wafer 31 with the film 10', set the pick-up mechanism on the lower side of the dicing tape 20 in the figure. After the ejector member 43 rises and is pushed up via the dicing belt 20, it is adsorbed and held by the suction jig 44. In the picking step, the jacking speed of the ejector pin member 43 is, for example, 1 to 160 mm/sec, and the jacking amount of the ejector pin member 43 is, for example, 50 to 3000 μm.

Then, as shown in FIG. 7, the chip 31 with the film 10 ′ is flip-chip mounted on the mounting substrate 51. As the mounting substrate 51, for example, a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board may be mentioned. The chip 31 and the mounting substrate 51 are electrically connected via bumps 52. Specifically, the electrode pads (not shown) of the chip 31 on the circuit forming surface side and the terminal portions (not shown) of the mounting substrate 51 are electrically connected via bumps 52. The bump 52 is, for example, a solder bump. In addition, a thermosetting primer 53 is interposed between the chip 31 and the mounting substrate 51.

The composite film X can be used to manufacture a semiconductor device in the above manner. [Example]

[Example 1] <Production of semiconductor backside adhesive film> In the production of semiconductor backside adhesive film, first, acrylic resin A ₁ (trade name "Teisan Resin SG-P3", weight average molecular weight of 850,000), glass transition temperature Tg is 12°C, 100 parts by mass of Nagase chemteX Co., Ltd., 80 parts by mass of epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Dongdu Chemical Co., Ltd.), and epoxy resin E ₂ (product Name "JER YL980", manufactured by Mitsubishi Chemical Corporation) 34 parts by mass, phenol resin (trade name "MEH-7851SS", manufactured by Minghe Chemical Co., Ltd.) 119 parts by mass, filler (trade name "SO-25R", two Silica, with an average particle size of 0.5 μm, 250 parts by mass of Admatechs Co., Ltd., black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 33 parts by mass, and thermosetting catalyst ( Brand name "Curezol 2PHZ-PW", manufactured by Shikoku Chemical Industry Co., Ltd.) 6 parts by mass was added to methyl ethyl ketone and mixed to obtain an adhesive composition with a solid content concentration of 28% by mass. Then, the adhesive composition was coated with an applicator on the silicone release treatment surface of the PET separator (thickness 50 μm) with the surface subjected to the silicone release treatment to form an adhesive composition layer. Then, the composition layer was heated at 130°C for 2 minutes to dry, and a 25 μm thick semiconductor backside adhesive film of Example 1 was formed on a PET separator (formed a thermosetting single layer in an uncured state). membrane). The composition of each layer of Example 1 and each of the following Examples and Comparative Examples is disclosed in Tables 1 and 2 (in Tables 1 and 2, the composition of each layer is represented by the mass ratio of the components).

<Production of crystal cutting tape> In a reaction vessel equipped with a condenser, a nitrogen introduction tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 2-hydroxyethyl acrylate (HEA) ) A mixture of 19 parts by mass, 0.4 parts by mass of benzoyl peroxide as a polymerization initiator, and 80 parts by mass of toluene as a polymerization solvent is stirred at 60° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). Through this polymerization reaction, a polymer solution containing acrylic polymer P ₁ is obtained. Then, in the P-containing acrylic polymer was added 12 parts by mass of the isocyanate solution of _{1-methyl-2-oxyethyl} Bingxi Xi (an MOI of), thereafter, stirred at 50 deg.] C under air atmosphere for 60 hours ( Addition reaction). Thereby, a polymer solution containing an acrylic polymer P ₂ having a methacrylic acid group in a side chain is obtained. Then, the polymer solution, 0.25 parts by mass of the crosslinking agent (trade name "Coronate L", polyisocyanate compound, Tosoh Co., Ltd.) relative to 100 parts by mass of the acrylic polymer P ₂ contained in the polymer solution Manufacturing), 2 parts by mass of a photopolymerization initiator (trade name "Irgacure 651", manufactured by BASF), and a specific amount of toluene were mixed to obtain an adhesive composition with a solid content of 28% by mass. Then, the adhesive composition is coated on the silicone release treatment surface of the PET separator with the surface where the silicone release treatment has been applied to form the adhesive composition layer using an applicator. Then, the composition layer was heated and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator. Then, using a laminator, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB0103", thickness 125 μm, manufactured by Kurabo Industries Co., Ltd.) was bonded to the adhesive layer at room temperature. Show up. The dicing tape of Example 1 with a laminated structure including a substrate and an ultraviolet curable adhesive layer was produced in the above manner. The blending amount of the crosslinking agent in the dicing tape (DT) adhesive layer of Example 1 and the following examples and comparative examples is disclosed in Tables 1 and 2.

＜Production of chip-cut tape integrated semiconductor backside adhesive film＞ The above-mentioned semiconductor backside adhesive film of Example 1 with the PET separator was punched into a disc shape with a diameter of 330 mm. Then, the PET separator was peeled off from the above-mentioned dicing tape, and thereafter, the adhesive layer exposed in the dicing tape was bonded to the semiconductor backside adhesive film accompanying the PET separator using a hand roller. Then, the dicing tape bonded to the backside adhesive film of the semiconductor in this way is punched into a disc shape with a diameter of 370 mm in such a way that the center of the dicing tape is aligned with the center of the backside adhesive film of the semiconductor. In the above manner, the dicing tape integrated semiconductor backside adhesive film of Example 1 having a laminated structure including the dicing tape and the semiconductor backside adhesive film was produced.

[Examples 2, 3] In the formation of the adhesive layer of the dicing tape, the amount of the crosslinking agent (trade name "Coronate L") was set to 1 part by mass (Example 2) or 5 parts by mass (Example 3) instead of 0.25 parts by mass, except Otherwise, the dicing tape integrated semiconductor backside adhesive film of Examples 2 and 3 was produced in the same manner as the dicing tape integrated semiconductor backside adhesive film of Example 1.

[Example 4] In the production of the adhesive film on the back of a semiconductor, the amount of epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Toto Chemical Co., Ltd.) was set to 52 parts by mass instead of 80 parts by mass. The amount of epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) was 22 parts by mass instead of 34 parts by mass, and the phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Chemical Co., Ltd.) Manufacturing) is set to 76 parts by mass instead of 119 parts by mass, and the amount of filler (trade name "SO-25R", silica, average particle size 0.5 μm, manufactured by Admatechs Co., Ltd.) is set to 188 parts by mass instead 250 parts by mass, the amount of the black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) is 25 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curezol 2PHZ- PW", manufactured by Shikoku Chemical Industry Co., Ltd.) was set to 4 parts by mass instead of 6 parts by mass. Except for this, the semiconductor backside adhesive film of Example 4 was produced in the same manner as the semiconductor backside adhesive film of Example 1 . In the formation of the adhesive layer of the dicing tape, the amount of the cross-linking agent (trade name "Coronate L") was set to 1 part by mass instead of 0.25 parts by mass, except that the same as the dicing tape of Example 1 The dicing tape of Example 4 was produced in the same manner. In addition, the semiconductor backside adhesive film and dicing tape of Example 4 were used instead of the semiconductor backside adhesive film and dicing tape of Example 1, except that the same as the semiconductor backside adhesive film of embodiment 1 with integrated dicing tape Method A semiconductor backside adhesive film with integrated dicing tape of Example 4 was produced.

[Example 5] In the production of the adhesive film on the back surface of a semiconductor, the amount of epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Dongdu Chemical Co., Ltd.) was set to 34 parts by mass instead of 80 parts by mass. The amount of epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) was set to 15 parts by mass instead of 34 parts by mass, and the phenol resin (trade name "MEH-7851SS", produced by Meiwa Chemical Co., Ltd.) Manufacturing) is set to 51 parts by mass instead of 119 parts by mass, and the amount of filler (trade name "SO-25R", silica, average particle size 0.5 μm, manufactured by Admatechs Co., Ltd.) is set to 150 parts by mass instead 250 parts by mass, the amount of the black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) was set to 20 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curezol 2PHZ- PW", manufactured by Shikoku Chemical Industry Co., Ltd.) was set to 4 parts by mass instead of 6 parts by mass. Except for this, the semiconductor backside adhesive film of Example 5 was produced in the same manner as the semiconductor backside adhesive film of Example 1 . In the formation of the adhesive layer of the dicing tape, the amount of the crosslinking agent (trade name "Coronate L") was set to 1 part by mass instead of 0.25 parts by mass, except that the same as the dicing tape of Example 1 The dicing tape of Example 5 was produced in the same manner. In addition, the semiconductor backside adhesion film and dicing tape of Example 5 were used instead of the semiconductor backside adhesion film and dicing tape of Example 1, except that the same as the semiconductor backside adhesion film of embodiment 1 with integrated dicing tape Method The semiconductor backside adhesive film integrated with the dicing tape of Example 5 was produced.

[Example 6] ＜Production of adhesive film on backside of semiconductor＞ In the production of the semiconductor backside adhesive film of Example 6, first, the first film for forming the laser mark layer (LM layer) and the second film for forming the adhesive layer (AH layer) are respectively formed.

In the production of the first film, first, acrylic resin A ₁ (trade name "Teisan Resin SG-P3", weight average molecular weight of 850,000, glass transition temperature Tg of 12°C, manufactured by Nagase chemteX Co., Ltd.) 100 Parts by mass, epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Toto Chemical Co., Ltd.) 43 parts by mass, epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation) 11 parts by mass, 55 parts by mass of phenol resin (trade name "MEH-7851SS", manufactured by Minghe Chemical Co., Ltd.), filler (trade name "SO-25R", silicon dioxide, average particle size 0.5 μm, Admatechs Co., Ltd.) Manufactured by the company) 229 parts by mass, black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 9 parts by mass, and thermosetting catalyst (trade name "Curezol 2PHZ-PW", Shikoku Chemical Industries Co., Ltd.) 11 parts by mass were added to methyl ethyl ketone and mixed to obtain an adhesive composition with a solid content concentration of 28% by mass. Then, an applicator was used to coat the adhesive composition on the silicone release treatment surface of the PET separator (thickness 50 μm) with the surface where the silicone release treatment was applied to form an adhesive composition layer. Then, the composition layer was heated at 130° C. for 2 minutes to dry it, and a first film with a thickness of 12.5 μm was formed on the PET separator (a film to form a cured thermosetting layer, that is, a laser marking layer).

In the production of the second film, first, acrylic resin A ₂ (trade name "Teisan Resin SG-708-6", weight average molecular weight is 700,000, and glass transition temperature Tg is 4°C, manufactured by Nagase chemteX Co., Ltd.) ) 100 parts by mass, 213 parts by mass of phenol resin (trade name "MEH-7851SS", manufactured by Minghe Chemical Co., Ltd.), and filler (trade name "SO-25R", silica, average particle size 0.5 μm, Admatechs Co., Ltd.) 258 parts by mass were added to methyl ethyl ketone and mixed to obtain an adhesive composition with a solid content concentration of 28% by mass. Then, use an applicator to coat the adhesive composition on the silicone release treatment surface of the PET separator with the surface that has been subjected to the silicone release treatment to form an adhesive composition layer. Then, the composition layer was heated at 130° C. for 2 minutes to dry it, and a second film with a thickness of 12.5 μm (a film for forming a non-thermosetting adhesive layer) was formed on the PET separator.

Use a laminating machine to bond the first film on the PET separator and the second film on the PET separator produced in the above manner. Specifically, the exposed surfaces of the first and second films were bonded to each other under the conditions of a temperature of 100°C and a pressure of 0.6 MPa. The semiconductor backside adhesive film of Example 1 was produced in the above manner.

＜Production of crystal cut ribbon＞ In the formation of the adhesive layer of the dicing tape, the amount of the crosslinking agent (trade name "Coronate L") was set to 1 part by mass instead of 0.25 parts by mass, except that the same as the dicing tape of Example 1 The dicing tape of Example 6 was produced in the same manner.

＜Production of chip-cut tape integrated semiconductor backside adhesive film＞ The above-mentioned semiconductor backside adhesive film of Example 6 with the PET separator was punched into a disc shape with a diameter of 330 mm. Then, the PET separator was peeled off from the first film side of the semiconductor backside adhesive film and the PET separator was peeled off from the dicing tape of Example 6. After that, the backside of the semiconductor accompanied with the PET separator was adhered using a hand roller The film adheres to the adhesive layer of the dicing tape via the first film side. Then, in this way, the dicing tape attached to the backside adhesion film of the semiconductor is punched into a disc shape with a diameter of 370 mm so that the center of the dicing tape is aligned with the center of the backside adhesion film of the semiconductor. In the above manner, the dicing tape integrated semiconductor backside adhesive film of Example 6 having a laminated structure including the dicing tape and the semiconductor backside adhesive film was produced.

[Example 7] In the production of the second film forming the adhesive layer, the amount of the filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) was set to 168 parts by mass instead of 258 parts by mass. Otherwise, the same as in Example 6 The dicing tape integrated semiconductor backside adhesive film of Example 7 was produced in the same manner as the dicing tape integrated semiconductor backside adhesive film.

[Comparative Example 1] In the production of the adhesive film for the back surface of a semiconductor, the amount of epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) was set to 10 parts by mass instead of 80 parts by mass. The amount of epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) was set to 10 parts by mass instead of 34 parts by mass, and the phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Chemical Co., Ltd.) Manufacturing) is set to 22 parts by mass instead of 119 parts by mass, and the amount of filler (trade name "SO-25R", silica, average particle size 0.5 μm, manufactured by Admatechs Co., Ltd.) is set to 101 parts by mass instead 250 parts by mass, the amount of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) is 9 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curezol 2PHZ- PW", manufactured by Shikoku Chemical Industry Co., Ltd.) is set to 4 parts by mass instead of 6 parts by mass. Except for this, the semiconductor backside adhesive film of Comparative Example 1 was produced in the same manner as the semiconductor backside adhesive film of Example 1 . In the formation of the adhesive layer of the dicing tape, the amount of the crosslinking agent (trade name "Coronate L") was set to 5 parts by mass instead of 0.25 parts by mass, except that the same as the dicing tape of Example 1 The dicing tape of Comparative Example 1 was produced in this way. In addition, the semiconductor backside adhesion film and dicing tape of Comparative Example 1 were used instead of the semiconductor backside adhesion film and dicing tape of Example 1. Except for this, the same as the semiconductor backside adhesion film of embodiment 1 with integrated dicing tape In this way, the dicing tape integrated semiconductor backside adhesive film of Comparative Example 1 was produced.

[Comparative Example 2] In the production of the adhesive film for the back surface of a semiconductor, the amount of epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Dongdu Chemical Co., Ltd.) was set to 10 parts by mass instead of 80 parts by mass. The amount of epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) was set to 10 parts by mass instead of 34 parts by mass, and the phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Chemical Co., Ltd.) Manufacturing) is set to 22 parts by mass instead of 119 parts by mass, and the amount of filler (trade name "SO-25R", silica, average particle size 0.5 μm, manufactured by Admatechs Co., Ltd.) is set to 101 parts by mass instead 250 parts by mass, the amount of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) is 9 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curezol 2PHZ- PW", manufactured by Shikoku Chemical Industry Co., Ltd.) is set to 4 parts by mass instead of 6 parts by mass, except for this, Comparative Example 2 was produced in the same manner as the wafer-cut tape integrated semiconductor backside adhesive film of Example 1 The dicing tape integrated semiconductor backside adhesive film.

[Comparative Example 3] In the production of the adhesive film for the back surface of the semiconductor, the amount of epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) was set to 138 parts by mass instead of 80 parts by mass. The amount of epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Co., Ltd.) was set to 138 parts by mass instead of 34 parts by mass, and the phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Chemical Co., Ltd.) Manufacture) is set to 291 parts by mass instead of 119 parts by mass, and the amount of filler (trade name "SO-25R", silica, average particle size 0.5 μm, manufactured by Admatechs Co., Ltd.) is set to 471 parts by mass instead 250 parts by mass, the amount of the black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) was set to 40 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curezol 2PHZ- PW", manufactured by Shikoku Chemical Industry Co., Ltd.) is set to 17 parts by mass instead of 6 parts by mass, except for this, Comparative Example 3 was produced in the same manner as the wafer-cut tape integrated semiconductor backside adhesive film of Example 1 The dicing tape integrated semiconductor backside adhesive film.

[Comparative Example 4] In the production of the second film, the amount of the filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) was set to 313 parts by mass instead of 258 parts by mass. Otherwise, it was in close contact with the semiconductor back surface of Example 6 In the same manner as the film, a semiconductor backside adhesive film of Comparative Example 4 was produced. In the formation of the adhesive layer of the dicing tape, the amount of the crosslinking agent (trade name "Coronate L") was set to 5 parts by mass instead of 0.25 parts by mass, except for this, in the same manner as the dicing tape of Example 1 The dicing tape of Comparative Example 4 was produced. In addition, the semiconductor backside adhesion film and dicing tape of Comparative Example 4 were used instead of the semiconductor backside adhesion film and dicing tape of Example 6, except that the same as the semiconductor backside adhesion film of Example 6 with integrated dicing tape In this way, the dicing tape integrated semiconductor backside adhesive film of Comparative Example 4 was produced.

[Comparative Example 5] In the production of the second film, the amount of filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) was set to 78 parts by mass instead of 258 parts by mass. Otherwise, it was in close contact with the back surface of the semiconductor of Example 6 In the same manner as the film, a semiconductor backside adhesive film of Comparative Example 5 was produced. In addition, the semiconductor backside adhesion film of Comparative Example 5 and the same dicing tape as the dicing tape of Example 1 were used instead of the semiconductor backside adhesion film and the dicing tape of Example 6. In addition, the same as that of Example 6 was used. The wafer integrated semiconductor backside adhesive film of Comparative Example 5 was produced in the same manner as the wafer integrated semiconductor backside adhesive film.

<1st peeling adhesive force> For each of the dicing tape integrated semiconductor backside adhesive films of Examples 1-7 and Comparative Examples 1-5, the peeling adhesive force between the dicing tape and the semiconductor backside adhesive film at 25°C Perform the measurement. First, a backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) is attached to the semiconductor backside adhesive film side of the dicing tape integrated semiconductor backside adhesive film using a hand roller. Then, a test piece (the first test piece) with a width of 20 mm and a length of 200 mm was cut from the wafer-cut tape-integrated semiconductor backside adhesive film with a backing tape. Then, the dicing tape side of the test piece was attached to the silicon wafer via a double-sided adhesive tape with strong adhesion. In addition, the test piece was subjected to a peel test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the first peel adhesion between the dicing tape and the backside adhesion film of the semiconductor was measured Force F ₁ (N/20 mm). In this measurement, the temperature condition was set to 25°C, the peeling angle was set to 180°, and the stretching speed was set to 300 mm/min. The results are shown in Tables 1 and 2.

<Second Peeling Adhesive Strength> For the workpiece bonding surface of the semiconductor backside bonding film of each dicing tape integrated semiconductor backside bonding film of Examples 1 to 7 and Comparative Examples 1 to 5, we studied the bonding surface of the silicon wafer at 25°C The peeling adhesion. First, since the cut crystal with a semiconductor integrated back surface side of the film in close contact with the base of the cut crystal irradiation integrated light quantity irradiating the adhesive layer 300 mJ / cm ² of ultraviolet ray curable adhesive layer so that, thereafter, cut from the crystal zone The dicing tape of the integrated semiconductor backside adhesive film peels off the semiconductor backside adhesive film. Then, a backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) is attached to the side surface of the dicing tape of the peeled semiconductor backside adhesive film (the surface of the side exposed by peeling). Next, a test piece (the first semiconductor backside adhesive film test piece) having a laminated structure of a semiconductor backside adhesive film and a backing tape with a size of 20 mm in width×200 mm in length was cut out from the bonded body. Then, a silicon wafer (8 inches in diameter, 500 μm thick) with a polishing surface (mirror polished surface) polished with a grinding material of No. 2000 placed on a 70°C hot plate was confirmed. After the surface temperature reached 70°C, the mirror-polished surface of the silicon wafer was attached to the side of the semiconductor backside adhesive film side of the test piece. Laminating is performed by pressing a 2 kg hand roller back and forth twice. After bonding, place the wafer with the test piece on the hot plate for 1 minute. In addition, the test piece was subjected to a peel test using a tensile testing machine (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the test piece (the first semiconductor backside adhesion film test piece) and the silicon crystal were measured The second peel adhesion between the circular planes F ₂ (N/20 mm). In this measurement, the temperature condition was set to 25°C, the peeling angle was set to 180°, and the stretching speed was set to 300 mm/min. The results are shown in Tables 1 and 2. When peeling occurs at the interface between the backing tape (trade name "BT-315") and the backside adhesive film of the semiconductor during the peeling test, the points that the second peeling adhesive force F ₂ exceeds 8 N/20 mm are shown in the table (The measurement results of the peel test after measuring the peel adhesion between the semiconductor backside adhesive film and the silicon wafer are also the same).

<3rd peeling adhesive force> For each dicing tape integrated semiconductor backside adhesive film of Examples 1-7 and Comparative Examples 1-5, the peeling adhesive force between the dicing tape and the semiconductor backside adhesive film at 60°C Perform the measurement. Specifically, a test piece for the third peel adhesion measurement (the second test piece) was produced in the same manner as the test piece for the first peel adhesion measurement, and a tensile tester (trade name) was used for the test piece. "Autograph AGS-J", manufactured by Shimadzu Corporation) conducted a peel test, and measured the third peel adhesion force F ₃ (N/20 mm) between the dicing tape and the semiconductor backside adhesive film. In this measurement, the temperature condition was set to 60°C, the peeling angle was set to 180°, and the stretching speed was set to 300 mm/min. The results are shown in Tables 1 and 2.

<Fourth Peeling Adhesive Strength> For the workpiece bonding surface of the semiconductor backside bonding film of each dicing tape integrated semiconductor backside bonding film of Examples 1-7 and Comparative Examples 1-5, the work bonding surface of the silicon wafer at 60℃ was studied The peeling adhesion. Specifically, the test piece for the third peel adhesion measurement (the second semiconductor backside adhesion film test piece) was prepared in the same manner as the test piece for the second peel adhesion measurement, and the measurement temperature in the peel test was set to 60°C instead of 25°C. Except for this, the adhesion to the peeling test of the test piece of the semiconductor backside adhesion film of the silicon wafer was carried out in the same manner as the second peel adhesion measurement described above, and the test piece and the The fourth peel adhesion force F ₄ (N/20 mm) between silicon wafer planes. The results are shown in Tables 1 and 2.

＜Evaluation of adhesion to wafer at 25℃＞ The adhesiveness to the silicon wafer at 25°C of the semiconductor backside adhesive film of each dicing tape integrated semiconductor backside adhesive film of each of the dicing tape integrated semiconductor backside adhesive films of Examples 1-7 and Comparative Examples 1-5 was studied. First, a bonding machine is used to bond a silicon wafer (8 inches in diameter, 500 μm thick) on the mirror polished surface of the silicon wafer (8 inches in diameter, 500 μm in thickness) that has been polished with the grinding material of No. 2000. The bulk semiconductor backside adhesive film, and then, the silicon wafer with the integrated dicing tape integrated semiconductor backside adhesive film is allowed to stand at room temperature for 20 minutes. During bonding, the temperature is 70°C, the bonding speed is 10 mm/min, and the pressure is 0.15 MPa. Then, the silicon wafer with the integrated semiconductor backside adhesive film with dicing tape was placed on the heating plate at 25℃ with the wafer in contact with the heating plate. After 30 seconds, the silicon wafer was slowly pulled by hand. The dicing tape of the integrated semiconductor backside adhesive film is bonded to the dicing tape for peeling from the wafer. In this peeling operation, the peeling angle of the diced tape is set to fall within the range of 100° to 180°, and the stretching speed is about 1 to 300 mm/min. Regarding the adhesiveness of the semiconductor backside adhesive film to the wafer at 25°C, the peeling process at the interface between the dicing tape and the semiconductor backside adhesive film was evaluated as "good", and the semiconductor backside adhesion film was evaluated as "good". The interface between the adhesive film and the silicon wafer was evaluated as "bad". The evaluation results are shown in Tables 1 and 2.

＜Evaluation of wafer peelability at 60℃＞ The peelability of the semiconductor backside adhesive film of each dicing tape-integrated semiconductor backside adhesive film of each of the dicing tape integrated semiconductor backside adhesive films at 60°C in Examples 1 to 7 and Comparative Examples 1 to 5 was studied. Specifically, the temperature of the hot plate is set to 60°C instead of 25°C. Except for this, the silicon wafer dicing tape is performed in the same way as the evaluation of the adhesion under the wafer at 25°C as described above. Integral semiconductor backside adhesive film bonding to peeling operations. Regarding the peelability of the semiconductor backside adhesion film to the wafer at 60°C, the peeling operation at the interface between the semiconductor backside adhesion film and the silicon wafer was evaluated as "good", and the peeling operation was used to cut the wafer The case where peeling occurred at the interface between the tape and the semiconductor backside adhesive film was evaluated as "bad". The evaluation results are shown in Tables 1 and 2.

<Fifth Peeling Adhesion> For each of the dicing tape integrated semiconductor backside adhesive films of Examples 1-7 and Comparative Examples 1-5, the dicing tape and semiconductor backside adhesive film at 25°C after a specific heat treatment The peel adhesion between the two was measured. First, in a constant temperature bath, the dicing tape integrated semiconductor backside adhesive film is heated at 80°C for 1 hour. Then, use a hand roller for 20 minutes to cool the dicing tape-integrated semiconductor backside adhesive film. The semiconductor backside adhesive film side bonding substrate tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) . Then, a test piece (the third test piece) with a width of 20 mm and a length of 200 mm was cut from the wafer-cut tape-integrated semiconductor backside adhesive film with a backing tape. In addition, for this test piece, a peel test was performed using a tensile testing machine (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the fifth peel adhesion between the dicing tape and the semiconductor backside adhesive film was measured Force F ₅ (N/20 mm). In this measurement, the temperature condition was set to 25°C, the peel angle was set to 180°, and the stretching speed was set to 300 mm/min. The results are shown in Tables 1 and 2.

<6th peel adhesion> For the workpiece bonding surface of the semiconductor backside adhesive film in each of the dicing tape integrated semiconductor backside adhesive films of Examples 1-7 and Comparative Examples 1-5, 25 after specific heat treatment Study the peeling adhesion of silicon wafer at ℃. First, since the cut crystal with a semiconductor integrated back surface side of the film in close contact with the base of the cut crystal irradiation integrated light quantity irradiating the adhesive layer 300 mJ / cm ² of ultraviolet ray curable adhesive layer so that, thereafter, cut from the crystal zone The dicing tape of the integrated semiconductor backside adhesive film peels off the semiconductor backside adhesive film. Then, a backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) is attached to the side surface of the dicing tape of the peeled semiconductor backside adhesive film (the surface of the side exposed by peeling). Next, a test piece (third semiconductor backside adhesive film test piece) having a laminated structure of a semiconductor backside adhesive film and a backing tape with a size of 20 mm in width×200 mm in length was cut from the bonded body. Then, a silicon wafer (8 inches in diameter, 500 μm thick) with a polishing surface (mirror polished surface) polished with a grinding material of No. 2000 placed on a 70°C hot plate was confirmed. After the surface temperature reached 70°C, the mirror-polished surface of the silicon wafer was bonded to the side of the semiconductor backside contact film side of the test piece, and then the wafer with the test piece was allowed to stand on the hot plate for 1 minute. Laminating is performed by pressing a 2 kg hand roller back and forth twice. Then, in a constant temperature bath, the wafer with the test piece was heated at 80°C for 1 hour. After cooling for 20 minutes, the test piece was subjected to a peel test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the test piece (the third semiconductor back surface The sixth peel adhesion force F ₆ (N/20 mm) between the adhesive film test piece and the silicon wafer plane. In this measurement, the temperature condition was set to 25°C, the peeling angle was set to 180°, and the stretching speed was set to 300 mm/min. The results are shown in Tables 1 and 2.

<7th peeling adhesive force> For each dicing tape integrated semiconductor backside adhesive film of Examples 1-7 and Comparative Examples 1-5, the dicing tape and semiconductor backside adhesive film at 60°C after specific heat treatment The peel adhesion between the two was measured. Specifically, a test piece for the third peel adhesion measurement (the fourth test piece) was produced in the same manner as the test piece for the fifth peel adhesion measurement, and a tensile tester (trade name) was used for the test piece. "Autograph AGS-J", manufactured by Shimadzu Corporation) conducted a peel test, and measured the seventh peel adhesion force F ₇ (N/20 mm) between the dicing tape and the semiconductor backside adhesive film. In this measurement, the temperature condition is set to 60°C, the peeling angle is set to 180°, and the stretching speed is set to 300 mm/min. The results are shown in Tables 1 and 2.

<Eighth Peeling Adhesive Strength> For the workpiece bonding surface of the semiconductor backside adhesive film in each of the dicing tape integrated semiconductor backside adhesive films of Examples 1-7 and Comparative Examples 1-5, 60 after specific heat treatment Study the peeling adhesion of silicon wafer at ℃. Specifically, the test piece for the eighth peel adhesion measurement (the fourth semiconductor backside adhesion film test piece) was prepared in the same manner as the test piece for the sixth peel adhesion measurement, and the measurement temperature in the peel test was set to 60°C instead of 25°C, except that, the same as described above for the measurement of the sixth peel adhesion force, from the bonding to the peeling test of the semiconductor backside adhesive film test piece of the silicon wafer, the measurement test The eighth peel adhesion force F ₈ (N/20 mm) between the fourth semiconductor backside adhesive film test piece and the silicon wafer plane. The results are shown in Tables 1 and 2.

＜Evaluation of adhesion to wafer at 25℃ after heat treatment＞ For the semiconductor backside adhesive film in each dicing tape integrated semiconductor backside adhesive film of Examples 1-7 and Comparative Examples 1-5, the adhesiveness to the silicon wafer at 25°C after specific heat treatment was studied . First, a bonding machine is used to bond a silicon wafer (8 inches in diameter, 500 μm thick) on the mirror polished surface of the silicon wafer (8 inches in diameter, 500 μm thick) that has been polished with the grinding material of No. 2000 Bulk semiconductor backside adhesive film. In this bonding, the temperature is 70°C, the bonding speed is 1 m/min, and the pressure is 0.15 MPa. Then, in a constant temperature bath, the silicon wafer with integrated dicing tape-integrated semiconductor backside adhesive film is heated at 80°C for 1 hour. After that, the silicon wafer with the integrated semiconductor backside adhesive film with dicing tape was placed and cooled for 20 minutes at room temperature. Then, the silicon wafer with the integrated semiconductor backside adhesive film with dicing tape was placed on the heating plate at 25°C with the wafer in contact with the heating plate, and 30 seconds later, slowly pulled by hand The dicing tape of the integrated semiconductor backside adhesive film is bonded to the dicing tape for peeling from the wafer. In this peeling operation, the peeling angle of the diced tape is set to fall within the range of 100° to 180°, and the stretching speed is about 1 to 300 mm/min. Regarding the adhesion to the wafer at 25°C after the heat treatment of the semiconductor backside adhesive film, the case where peeling occurs at the interface between the dicing tape and the semiconductor backside adhesive film by the peeling operation is evaluated as "good". When working on the interface between the back contact film of the semiconductor and the silicon wafer, peeling occurred was evaluated as "bad". The evaluation results are shown in Tables 1 and 2.

＜Evaluation of wafer peelability at 60℃ after heat treatment＞ The peelability of the semiconductor backside adhesive film in each dicing tape-integrated semiconductor backside adhesive film of each of the dicing tape integrated semiconductor backside adhesive films of Examples 1-7 and Comparative Examples 1-5 at 60°C after a specific heat treatment was studied. Specifically, the temperature of the hot plate is set to 60°C instead of 25°C. Except for this, the silicon wafer is cut in the same manner as the evaluation of the adhesion to the wafer at 25°C as described above. Laminating to peeling operation with integrated semiconductor backside adhesive film. Regarding the peelability to the wafer at 60°C after the heat treatment of the semiconductor backside adhesive film, the peeling operation at the interface between the dicing tape and the semiconductor backside adhesive film was evaluated as "good", and the When working on the interface between the back contact film of the semiconductor and the silicon wafer, peeling was evaluated as "bad". The evaluation results are shown in Tables 1 and 2.

[Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 The layer composition of the back contact film of the semiconductor Single layer Single layer Single layer Single layer Single layer LM layer AH layer Acrylic resin A ₁ (Teisan Resin SG-P3) 100 100 100 100 100 100 - Acrylic resin A ₂ (Teisan Resin SG-708-6) - - - - - - 100 Epoxy resin E ₁ (KI-3000-4) 80 80 80 52 34 43 - Epoxy resin E ₂ (JER YL980) 34 34 34 twenty two 15 11 - Phenolic resin (MEH-7851SS) 119 119 119 76 51 55 213 Packing (SO-25R) 250 250 250 188 150 229 258 Black dyes (OIL BLACK BS) 33 33 33 25 20 9 - Thermal hardening catalyst (2PHZ-PW) 6 6 6 4 4 11 - Crosslinking agent for DT adhesive layer (Coronate L) 0.25 1 5 1 1 1 First peel adhesion force F ₁ (N/20 mm) 2.5 1.5 0.25 1.4 1.3 1.2 Second peel adhesion force F ₂ (N/20 mm) 8＜ 8＜ 8＜ 8＜ 8＜ 8＜ The third peel adhesion force F ₃ (N/20 mm) 2.0 1.2 0.22 1.0 1.1 1.0 The fourth peel adhesion force F ₄ (N/20 mm) 0.17 0.17 0.17 0.10 0.05 0.06 Evaluation of adhesion to wafer at 25℃ Good (F ₁ ＜F ₂ ) Good (F1＜F ₂ ) Good (F ₁ ＜F ₂ ) Good (F ₁ ＜F ₂ ) Good (F ₁ ＜F ₂ ) Good (F ₁ ＜F ₂ ) Evaluation of wafer peelability at 60℃ Good (F ₃ ＞F ₄ ) Good (F ₃ ＞F ₄ ) Good (F ₃ ＞F ₄ ) Good (F ₃ ＞F ₄ ) Good (F ₃ ＞F ₄ ) Good (F ₃ ＞F ₄ ) The fifth peel adhesion force F ₅ (N/20 mm) 2.5 1.5 0.25 1.4 1.3 1.2 The sixth peel adhesion force F ₆ (N/20 mm) 8＜ 8＜ 8＜ 8＜ 8＜ 8＜ The seventh peel adhesion force F ₇ (N/20 mm) 2.0 1.2 0.22 1.0 1.1 1.0 8th peel adhesion force F ₈ (N/20 mm) 8＜ 8＜ 8＜ 8＜ 8＜ 8＜ Evaluation of adhesion to wafer at 25℃ after heat treatment Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Evaluation of wafer peelability at 60℃ after heat treatment Good (F ₇ ＜F ₈ ) Good (F ₇ ＜F ₈ ) Good (F ₇ ＜F ₈ ) Good (F ₇ ＜F ₈ ) Good (F ₇ ＜F ₈ ) Good (F ₇ ＜F ₈ )

[Table 2] Example 7 Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative example 5 Layer composition of the backside adhesion film of semiconductor LM layer AH layer Single layer Single layer Single layer LM layer AH layer LM layer AH layer Acrylic resin A ₁ (Teisan Resin SG-P3) 100 - 100 100 100 100 - 100 - Acrylic resin A ₂ (Teisan Resin SG-708-6) - 100 - - - - 100 - 100 Epoxy resin E ₁ (KI-3000-4) 43 - 10 10 138 43 - 43 - Epoxy resin E ₂ (JER YL980) 11 - 10 10 138 11 - 11 - Phenolic resin (MEH-7851SS) 55 213 twenty two twenty two 291 55 213 55 213 Packing (SO-25R) 229 168 101 101 471 229 313 229 78 Black dyes (OIL BLACK BS) 9 - 9 9 40 9 - 9 - Thermal hardening catalyst (2PHZ-PW) 11 - 4 4 17 11 - 11 - Crosslinking agent for DT adhesive layer (Coronate L) 1 5 0.25 0.25 5 0.25 First peel adhesion force F ₁ (N/20 mm) 1.2 0.22 2.3 2.6 0.26 2.5 The second peel adhesion force F ₂ (N/20 mm) 8＜ 0.15 0.15 8＜ 0.13 8＜ The third peel adhesion force F ₃ (N/20 mm) 1.0 0.20 2.0 2.3 0.23 2.0 The fourth peel adhesion force F ₄ (N/20 mm) 0.15 0.10 0.10 7.0 0.10 7 Evaluation of adhesion to wafer at 25℃ Good (F ₁ ＜F ₂ ) bad bad Good (F ₁ ＜F ₂ ) bad Good (F ₁ ＜F ₂ ) Evaluation of wafer peelability at 60℃ Good (F ₃ ＞F ₄ ) Good (F ₃ ＞F ₄ ) Good (F ₃ ＞F ₄ ) bad Good (F ₃ ＞F ₄ ) bad The fifth peel adhesion force F ₅ (N/20 mm) 1.2 0.22 2.3 2.6 0.26 2.5 The sixth peel adhesion force F ₆ (N/20 mm) 8＜ 2.5 3.0 8＜ 5 8＜ 7th peel adhesion force F ₇ (N/20 mm) 1.0 0.20 2.0 2.0 0.23 2.0 8th peel adhesion force F ₈ (N/20 mm) 8＜ 1.6 2.4 8＜ 4.0 8＜ Evaluation of adhesion to wafer at 25℃ after heat treatment Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Good (F ₅ ＜F ₆ ) Evaluation of wafer peelability at 60℃ after heat treatment Good (F ₇ ＜F ₈ ) Good (F ₇ ＜F ₈ ) bad Good (F ₇ ＜F ₈ ) Good (F ₇ ＜F ₈ ) Good (F ₇ ＜F ₈ )

10: Film (Semiconductor backside adhesive film) 10': Film (Semiconductor backside adhesive film) 11: Laser marking layer 12: Next layer 12a: Workpiece contact surface 20: Cut crystal belt 21: Substrate 22: Adhesive layer 22a: Adhesive surface 30: Wafer 31: chip 41: ring frame 42: Holder 43: ejector component 44: Adsorption fixture 51: Install the base board 52: bump 53: Primer R: irradiation area T1: Tape for wafer processing T1a: Adhesive surface W: Wafer Wa: side 1 Wb: side 2 X: Composite film (cutting tape integrated semiconductor backside adhesive film)

Fig. 1 is a plan view of a dicing tape integrated semiconductor backside adhesive film according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of a dicing tape integrated semiconductor backside adhesive film according to an embodiment of the present invention. 3(a) and (b) show part of the steps in a semiconductor device manufacturing method using the dicing tape integrated semiconductor backside adhesive film shown in FIGS. 1 and 2. Figures 4(a) and (b) show steps following the steps shown in Figure 3. FIG. 5 shows the steps following the steps shown in FIG. 4. FIG. 6 shows the steps following the steps shown in FIG. 5. FIG. 7 shows the steps following the steps shown in FIG. 6.

10: Film (Semiconductor backside adhesive film)

11: Laser marking layer

12: Next layer

12a: Workpiece contact surface

20: Cut crystal belt

21: Substrate

22: Adhesive layer

22a: Adhesive surface

R: irradiation area

X: composite film (cutting tape integrated semiconductor backside adhesive film)

Claims (9)

A dicing tape-integrated semiconductor backside adhesive film, comprising: a dicing tape having a laminated structure including a substrate and an adhesive layer, and The backside adhesive film of the semiconductor that is peelably adhered to the adhesive layer of the dicing tape; and Compared with the first test piece measured in the peeling test between the dicing tape and the semiconductor backside adhesive film at 25°C, peeling angle 180°, and stretching speed 300 mm/min Peeling adhesive strength, between the first semiconductor backside adhesion film test piece that is bonded to the silicon wafer plane at 70℃, and the above silicon wafer plane at 25℃, peeling angle 180° and stretching speed 300 mm/min The second peel adhesion measured in the peel test under the conditions is greater; Compared with the third measured in the peel test between the dicing tape of the second test piece and the semiconductor backside adhesive film at 60°C, the peeling angle of 180°, and the tensile speed of 300 mm/min. Peel adhesion force, between the second semiconductor backside adhesive film test piece that is bonded to the silicon wafer plane at 70℃, and the above silicon wafer plane at 60℃, peeling angle 180° and stretching speed 300 mm/min The fourth peel adhesive force measured in the peel test performed under the conditions is smaller. Such as claim 1 of the semiconductor backside adhesive film with integrated dicing tape, wherein the first peeling adhesive force is 0.2～3 N/20 mm. Such as claim 1 or 2 of the chip integrated semiconductor backside adhesive film, wherein the second peel adhesion is 3 N/20 mm or more. Such as claim 1 or 2 of the semiconductor backside adhesive film with integrated dicing tape, wherein the third peeling adhesive force is 0.2 to 3 N/20 mm. Such as claim 1 or 2 of the chip-cut tape integrated semiconductor backside adhesive film, wherein the fourth peeling adhesive force is 0.2 N/20 mm or less. For example, the dicing tape integrated semiconductor backside adhesive film of claim 1 or 2, which is compared with the gap between the above-mentioned dicing tape and the semiconductor backside adhesive film of the third test piece subjected to a heat treatment at 80°C for 1 hour The 5th peel adhesion force measured in the peel test under the conditions of 25°C, peel angle 180° and tensile speed 300 mm/min, after bonding to the silicon wafer plane at 70°C and then 80°C , 1 hour of heat treatment between the third semiconductor backside adhesion film test piece and the above-mentioned silicon wafer plane under the conditions of 25 ℃, 180° peeling angle and tensile speed 300 mm/min peel test measured The sixth peel adhesion is greater. Such as claim 6 of the semiconductor backside adhesive film with integrated dicing tape, wherein the sixth peel adhesive force is 3 N/20 mm or more. Such as claim 1 or 2 of the semiconductor backside adhesive film with integrated dicing tape, which is compared with the gap between the above-mentioned dicing tape and the semiconductor backside adhesive film of the fourth test piece subjected to a heat treatment at 80°C for 1 hour The 7th peel adhesion force measured in the peel test under the conditions of 60°C, peel angle 180° and tensile speed 300 mm/min, after bonding to the silicon wafer plane at 70°C and then 80°C , 1 hour heat treatment between the fourth semiconductor backside adhesion film test piece and the above-mentioned silicon wafer plane, measured in the peel test under the conditions of 60°C, 180° peeling angle and 300 mm/min tensile speed The 8th peel adhesion is greater. Such as claim 8 of the wafer-cut tape integrated semiconductor backside adhesive film, wherein the above-mentioned eighth peeling adhesive force is 3 N/20 mm or more.

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