JP2020161571A - Dicing tape integrated semiconductor back adhesive film - Google Patents

Abstract

To provide a dicing tape integrated semiconductor back adhesive film having reworkability with regard to sticking.SOLUTION: A composite film X (dicing tape integrated semiconductor back adhesive film) comprises a film 10 (semiconductor back adhesive film) and a dicing tape 20. A second peeling adhesive strength which is measured by a peeling test under a predetermined first condition, between a test piece derived from the film 10 which is stuck to a silicon wafer plane at 70°C and the silicon wafer plane is greater than a first peeling adhesive strength which is measured by a peeling test under the first condition, between the film 10 and the dicing tape 20. A fourth peeling adhesive strength which is measured by a peeling test under a predetermined second condition, between a test piece derived from the film 10 which is stuck to the silicon wafer plane at 70°C and the silicon wafer plane is smaller than a third peeling adhesive strength which is measured by a peeling test under the second condition, between the film 10 and the dicing tape 20.SELECTED DRAWING: Figure 2

Description

The present invention relates to a semiconductor back-adhesive film integrated with a dicing tape that can be used in the manufacturing process of a semiconductor device.

In the manufacture of a semiconductor device including a semiconductor chip mounted on a flip chip, a dicing tape-integrated semiconductor back-adhesion film may be used to obtain a semiconductor chip having a protective film on the back surface of the chip. The dicing tape-integrated semiconductor back-adhesive film includes, for example, a dicing tape composed of a base material and an adhesive layer, and a semiconductor back-adhesive film that is releasably adhered to the adhesive layer side. The semiconductor back-adhesion film has a disk shape having a size corresponding to the semiconductor wafer as a work, and is concentrically bonded to a dicing tape having a disk shape having a size larger than that on the pressure-sensitive adhesive layer side.

The dicing tape integrated semiconductor back contact film is used, for example, as follows. First, the semiconductor back-adhesion film in the dicing tape-integrated semiconductor back-adhesion film is bonded to the semiconductor wafer (bonding step). In this step, a region around the semiconductor back contact film in the dicing tape or its adhesive layer is attached to the ring frame with respect to the set of the semiconductor wafer and the ring frame in which the ring frame is arranged so as to surround the semiconductor wafer. The semiconductor back-adhesion film integrated with the dicing tape is attached so that the semiconductor back-adhesion film is attached to the wafer. Next, in a state where the semiconductor wafer is held by the semiconductor back-adhesion film integrated with the dicing tape, the semiconductor wafer is individually separated into chips by, for example, blade dicing. As a result, a semiconductor chip having a chip-sized protective film derived from a semiconductor back-adhesive film on the back surface, that is, a semiconductor chip with a protective film can be obtained. This chip will be flip-chip mounted on a predetermined substrate. Techniques related to such a dicing tape-integrated semiconductor back-adhesive film are described in, for example, Patent Documents 1 and 2 below.

Japanese Unexamined Patent Publication No. 2011-151360 International Publication No. 2014/092200

In the bonding process as described above, the bonding position of the dicing tape-integrated semiconductor back-adhesion film with respect to the semiconductor wafer as the work and the ring frame associated therewith may be displaced (adhesion deviation). The dicing tape-integrated semiconductor back-adhesive film with a misalignment between the semiconductor wafer and the ring frame surrounding the semiconductor wafer may not be able to be handled through the ring frame in the process after the bonding process.

The present invention has been conceived under the above circumstances, and an object of the present invention is to provide a dicing tape-integrated semiconductor back-adhesive film having reworkability for bonding.

The dicing tape-integrated semiconductor back-adhesion film of the present invention is a composite film including a dicing tape and a semiconductor back-adhesion film. The dicing tape has a laminated structure including a base material and an adhesive layer. The semiconductor back-adhesive film is releasably adhered to the adhesive layer of the dicing tape. Such a semiconductor back-adhesive film integrated with a dicing tape can be used to obtain a semiconductor chip with a chip back-protecting film in the manufacturing process of a semiconductor device.

The semiconductor back-adhesion film (composite film) integrated with the dicing tape is 25 ° C., a peeling angle of 180 °, and tension between the dicing tape and the semiconductor back-adhesion film in the first test piece (prepared from the composite film). A first semiconductor back-adhesion film test piece (prepared from this composite film) bonded at 70 ° C. to a silicon wafer flat surface based on the first peeling adhesive strength measured in a peeling test under a condition of a speed of 300 mm / min. ) And the silicon wafer flat surface, the second peeling adhesive force measured in the peeling test under the conditions of 25 ° C., a peeling angle of 180 ° and a tensile speed of 300 mm / min is large. The first test piece is a test piece prepared by cutting out from the present composite film (the same applies to the second to fourth test pieces described later). The first semiconductor back-adhesion film test piece is prepared by peeling the semiconductor back-adhesion film from the composite film, attaching a backing tape to the exposed side surface by the peeling, and cutting out from the bonded body. (The same applies to the second to fourth semiconductor back contact film test pieces described later). The second peeling adhesive force corresponds to the peeling adhesive force between the work contact surface (the surface opposite to the dicing tape) of the semiconductor back contact film in this composite film and the silicon wafer flat surface (fourth and fourth below). The same applies to 6 and 8 peeling adhesive strength). Further, in the present invention, the peeling adhesive force with respect to the silicon wafer flat surface means the peeling adhesive force with respect to the silicon wafer flat surface finished with the No. 2000 abrasive.

Such a configuration is suitable for ensuring good adhesion to the wafer at, for example, at room temperature or in the vicinity thereof after the composite film is bonded to the semiconductor wafer which is the work by the semiconductor back contact film. ..

At the same time, the present composite film is subjected to the conditions of 60 ° C., a peeling angle of 180 ° and a tensile speed of 300 mm / min between the dicing tape and the semiconductor back contact film in the second test piece (prepared from the present composite film). From the third peeling adhesive strength measured in the peeling test of the above, the second semiconductor back contact film test piece (prepared from this composite film) bonded to the silicon wafer flat surface at 70 ° C. and the silicon wafer flat surface The fourth peeling adhesive force measured in the peeling test under the conditions of 60 ° C., peeling angle 180 ° and tensile speed 300 mm / min is small.

Such a configuration is suitable for bonding the present composite film to a semiconductor wafer as a work with the semiconductor back-adhesion film, heating the wafer to, for example, 60 ° C., and then peeling the composite film from the wafer. Suitable for rework.

As described above, the dicing tape-integrated semiconductor back-adhesion film of the present invention is suitable for ensuring good adhesion to a semiconductor wafer and has reworkability for bonding.

Preferably, the composite film is formed at 25 ° C. and a peeling angle of 180 between the dicing tape and the semiconductor back contact film in the third test piece (prepared from the composite film) that has been heat-treated at 80 ° C. for 1 hour. Based on the fifth peeling adhesive strength measured in the peeling test under the conditions of ° and a tensile speed of 300 mm / min, the third was subjected to bonding at 70 ° C. to a silicon wafer flat surface and then heat treatment at 80 ° C. for 1 hour. No. 6 measured by a peeling test between the semiconductor back-adhesion film test piece (prepared from this composite film) and the silicon wafer flat surface under the conditions of 25 ° C., peeling angle 180 ° and tensile speed 300 mm / min. The peeling adhesive strength is large.

Such a configuration is obtained by laminating the composite film on the semiconductor wafer and the ring frame without, for example, without misalignment, and then heat-treating the composite film or the semiconductor back-adhesive film under the conditions of, for example, 80 ° C. and 1 hour. It is suitable for suppressing peeling of the present composite film or the semiconductor back-adhesive film from the semiconductor wafer after the bonding.

Preferably, the composite film is 60 ° C. and a peeling angle of 180 between the dicing tape and the semiconductor back contact film in the fourth test piece (prepared from the composite film) that has been heat-treated at 80 ° C. for 1 hour. Based on the 7th peeling adhesive strength measured in the peeling test under the conditions of ° and a tensile speed of 300 mm / min, the 4th was subjected to bonding at 70 ° C. to a silicon wafer flat surface and then heat treatment at 80 ° C. for 1 hour. 8th measured in a peeling test between the semiconductor back-adhesion film test piece (prepared from this composite film) and the silicon wafer flat surface under the conditions of 60 ° C., peeling angle 180 ° and tensile speed 300 mm / min. The peeling adhesive strength is large.

Such a configuration is obtained by laminating the composite film on the semiconductor wafer and the ring frame without, for example, without misalignment, and then heat-treating the composite film or the semiconductor back-adhesive film under the conditions of, for example, 80 ° C. and 1 hour. It is suitable for suppressing peeling of the present composite film or the semiconductor back-adhesive film from the semiconductor wafer after the bonding.

The first peeling adhesive strength is preferably 0.2 to 3 N / 20 mm. The second peeling adhesive strength is preferably 3N / 20 mm or more. The third peeling adhesive strength is preferably 0.2 to 3 N / 20 mm. The fourth peeling adhesive strength is preferably 0.2 N / 20 mm or less. The fifth peeling adhesive strength is preferably 3N / 20 mm or less. The sixth peeling adhesive strength is preferably 3N / 20 mm or more. The seventh peeling adhesive strength is preferably 3N / 20 mm or less. The eighth peeling adhesive strength is preferably 3N / 20 mm or more. These configurations are suitable for realizing the above-mentioned magnitude relationship of the peeling adhesive force.

It is a top view of the semiconductor back contact film integrated with a dicing tape which concerns on one Embodiment of this invention. It is sectional drawing of the semiconductor back contact film integrated with a dicing tape which concerns on one Embodiment of this invention. A part of the steps in the semiconductor device manufacturing method in which the dicing tape-integrated semiconductor back-adhesion film shown in FIGS. 1 and 2 is used is shown. The steps following the steps shown in FIG. 3 are shown. The steps following the steps shown in FIG. 4 are shown. The steps following the steps shown in FIG. 5 are shown. The steps following the steps shown in FIG. 6 are shown.

1 and 2 show a composite film X which is a semiconductor back-adhesion film integrated with a dicing tape according to an embodiment of the present invention. FIG. 1 is a plan view of the composite film X, and FIG. 2 is a schematic cross-sectional view of the composite film X. The composite film X has a laminated structure including the film 10 and the dicing tape 20. The film 10 is a semiconductor back-adhesion film according to an embodiment of the present invention, and is a film to be bonded to the back surface or the back surface, which is a circuit non-forming surface of a semiconductor wafer as a work. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The pressure-sensitive adhesive layer 22 has a pressure-sensitive adhesive surface 22a on the film 10 side. The film 10 is releasably adhered to the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive surface 22a thereof. Further, the film 10 has a disk shape having a size corresponding to the semiconductor wafer as a work, and the dicing tape 20 has a disk shape having a size larger than that.

The composite film X is used, for example, as follows. First, the film 10 in the composite film X is bonded to the semiconductor wafer (bonding step). In this step, the area around the film 10 in the dicing tape 20 or the adhesive layer 22 thereof is attached to the ring frame with respect to the set of the semiconductor wafer and the ring frame in which the ring frame is arranged so as to surround the semiconductor wafer. , The bonding work of the composite film X is performed so that the film 10 is attached to the wafer. Next, while the semiconductor wafer is held by the composite film X, the semiconductor wafer is individually separated into chips by, for example, blade dicing. As a result, a semiconductor chip having a chip-sized protective film derived from the film 10 (semiconductor back-adhesive film) on the back surface, that is, a semiconductor chip with a protective film can be obtained. This chip will be flip-chip mounted on a predetermined substrate.

The film 10, which is a semiconductor back-adhesive film, has a laminated structure including a laser mark layer 11 and an adhesive layer 12. The laser mark layer 11 is located on the dicing tape 20 side of the film 10 and is in close contact with the dicing tape 20 or its adhesive layer 22. The surface of the laser mark layer 11 on the dicing tape 20 side is laser-marked during the manufacturing process of the semiconductor device. In the present embodiment, the laser mark layer 11 is a state in which the thermosetting resin composition layer is already thermoset. The adhesive layer 12 is a non-thermosetting resin composition layer having a work contact surface 12a located on the side where the work is bonded in the film 10 and having thermoplasticity in the present embodiment. The film 10 having a laminated structure including the laser mark layer 11 and the adhesive layer 12 is a non-thermosetting film having substantially no thermosetting property.

The laser mark layer 11 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or is accompanied by a thermosetting functional group capable of reacting with a curing agent to form a bond. It may have a composition containing a thermoplastic resin.

When the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, and a silicone resin. , And thermosetting polyimide resin. The laser mark layer 11 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. Since the epoxy resin tends to have a small content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be protected by the back surface protective film formed from the film 10 as described later, the laser mark of the film 10 tends to be small. It is preferable as the thermosetting resin in the layer 11. Further, as a curing agent for developing thermosetting property in the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, and biphenyl type epoxy. Bifunctional epoxy resins such as resins, naphthalene type epoxy resins, fluorene type epoxy resins, phenol novolac type epoxy resins, orthocresol novolac type epoxy resins, trishydroxyphenylmethane type epoxy resins, and tetraphenylol ethane type epoxy resins and polyfunctional Epoxy resin can be mentioned. Examples of the epoxy resin include a hydantoin type epoxy resin, a trisglycidyl isocyanurate type epoxy resin, and a glycidylamine type epoxy resin. Further, the laser mark layer 11 may contain one kind of epoxy resin, or may contain two or more kinds of epoxy resins.

Phenolic resins act as hardeners for epoxy resins, and such phenolic resins include, for example, novolaks such as phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolak resins, and nonylphenol novolak resins. Examples include type phenolic resins. Further, examples of the phenol resin include a resol type phenol resin and polyoxystyrene such as polyparaoxystyrene. Particularly preferable as the phenol resin in the laser mark layer 11, is a phenol novolac resin or a phenol aralkyl resin. Further, the laser mark layer 11 may contain one kind of phenol resin or two or more kinds of phenol resins as a curing agent for the epoxy resin.

When the laser mark layer 11 contains an epoxy resin and a phenol resin as a curing agent thereof, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents with respect to 1 equivalent of the epoxy groups in the epoxy resin. Both resins are blended at a ratio of preferably 0.8 to 1.2 equivalents. Such a configuration is preferable in order to sufficiently proceed the curing reaction of the epoxy resin and the phenol resin when the laser mark layer 11 is cured.

The content ratio of the total amount of the thermosetting resin in the laser mark layer 11 is preferably 25 to 60% by mass, and more preferably 35 to 55% by mass from the viewpoint of appropriately curing the laser mark layer 11.

The thermoplastic resin in the laser mark layer 11 has, for example, a binder function, and when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin, the thermoplastic resin is, for example, acrylic. Resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6 Examples thereof include polyamide resins such as nylon and 6,6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluororesins. The laser mark layer 11 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as a thermoplastic resin in the laser mark layer 11 because it has few ionic impurities and high heat resistance.

When the laser mark layer 11 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio. "(Meta) acrylic" shall mean "acrylic" and / or "methacryl".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic resin, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic resin include (meth) acrylic acid alkyl ester and (meth) acrylic acid cyclo. Alkyl esters and (meth) acrylic acid aryl esters can be mentioned. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, and iso of (meth) acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, tetradecyl ester , Hexadecyl ester, octadecyl ester, and eicosyl ester. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl (meth) acrylic acid and benzyl (meth) acrylic acid. As the constituent monomer of the acrylic resin, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic resin can be obtained by polymerizing a raw material monomer for forming the acrylic resin. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The acrylic resin may be composed of one or two or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, for the purpose of modifying its cohesive force and heat resistance. Examples of such monomers include carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and ( Examples include 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, and (meth) acryloyloxynaphthalene sulfonic acid. Can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate.

When the laser mark layer 11 has a composition containing a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above can be used as the constituent monomer of the acrylic resin contained in the laser mark layer 11. The acrylic resin for forming a thermosetting functional group-containing acrylic resin may be one or more types that can be copolymerized with a (meth) acrylic acid ester, for example, because of its cohesiveness and heat resistance modification. It may contain a monomer unit derived from the monomer of. As such a monomer, for example, the above-mentioned monomer can be used as another monomer copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. Further, a curing agent capable of reacting with the thermosetting functional group is selected according to the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenol resin as described above can be used as the curing agent for the epoxy resin.

The composition for forming the laser mark layer 11 preferably contains a thermosetting catalyst. The blending of the thermosetting catalyst into the composition for forming the laser mark layer is preferable in order to sufficiently proceed the curing reaction of the resin component in curing the laser mark layer 11 and to increase the curing reaction rate. Examples of such thermosetting catalysts include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogen borane compounds. Examples of the imidazole compound include 2-methylimidazole, 2-undecyl imidazole, 2-heptadecyl imidazole, 1,2-dimethyl imidazole, 2-ethyl-4-methyl imidazole, 2-phenyl imidazole, 2-phenyl-. 4-Methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole Rium trimeritate, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1') ')]-Ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole Can be mentioned. Examples of the triphenylphosphine compound include triphenylphosphine, tri (butylphenyl) phosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltrilphosphine, tetraphenylphosphonium bromide, and methyl. Included are triphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound shall also include a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-trilborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of amine compounds include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihalogen borane compound include trichloroborane. The composition for forming a laser mark layer may contain one kind of thermosetting catalyst, or may contain two or more kinds of thermosetting catalysts.

The laser mark layer 11 may contain a filler. The blending of the filler into the laser mark layer 11 is preferable in order to adjust the physical properties such as the elastic modulus of the laser mark layer 11, the yield point strength, and the elongation at break. Examples of the filler include an inorganic filler and an organic filler. Examples of the constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and nitride. Examples include boron, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon and graphite. Examples of the constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. The laser mark layer 11 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. When the laser mark layer 11 contains a filler, the average particle size of the filler is preferably 30 to 1000 nm, more preferably 40 to 700 nm, and more preferably 50 to 500 nm. That is, the laser mark layer 11 preferably contains a nanofiller. The configuration in which the laser mark layer 11 contains a nanofiller having such a particle size as a filler is suitable for ensuring high breakability of the film 10 to be fragmented. The average particle size of the filler can be determined using, for example, a luminous intensity type particle size distribution meter (trade name “LA-910”, manufactured by HORIBA, Ltd.). When the laser mark layer 11 contains a filler, the content of the filler is, for example, 30% by mass or more, preferably 40% by mass or more. The content is preferably 70% by mass or less, more preferably 60% by mass or less.

The laser mark layer 11 contains a colorant in this embodiment. The colorant may be a pigment or a dye. Examples of the colorant include a black colorant, a cyan colorant, a magenta colorant, and a yellow colorant. The laser mark layer 11 preferably contains a black colorant in order to realize high visibility of the information stamped on the laser mark layer 11 by the laser marking. Examples of black colorants include azo pigments such as carbon black, graphite (graphite), copper oxide, manganese dioxide, and azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite, magnetite, and oxidation. Examples thereof include chromium, iron oxide, molybdenum disulfide, composite oxide-based black dye, anthraquinone-based organic black dye, and azo-based organic black dye. Examples of carbon black include furnace black, channel black, acetylene black, thermal black, and lamp black. Examples of the black colorant include CI Solvent Black 3, 7, 22, 27, 29, 34, 43, and 70. Examples of the black colorant include CI Direct Black 17, 19, 22, 22, 32, 38, 51, and 71. Examples of the black colorant include CI Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, and 154. Be done. Examples of the black colorant include CI Dispers Black 1, 3, 10, and 24. Examples of the black colorant include CI Pigment Black 1 and 7. The laser mark layer 11 may contain one kind of colorant, or may contain two or more kinds of colorants. The content of the colorant in the laser mark layer 11 is preferably 0.5% by weight or more, more preferably 1% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less. These configurations regarding the colorant content are preferable in order to realize high visibility of the information imprinted on the laser mark layer 11 by the laser marking.

The laser mark layer 11 may contain one kind or two or more kinds of other components, if necessary. Examples of the other component include flame retardants, silane coupling agents, and ion trapping agents.

The thickness of the laser mark layer 11 is, for example, 5 to 35 μm.

The adhesive layer 12 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or may have a composition not containing a thermosetting resin.

When the adhesive layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, and silicone resin. And thermosetting polyimide resin. Specific examples of the thermosetting resin in the adhesive layer 12 include those described above as the thermosetting resin when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. The adhesive layer 12 may contain one type of thermosetting resin, or may contain two or more types of thermosetting resins. Since the epoxy resin tends to have a small content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be protected by the back surface protective film formed from the film 10 as described later, the adhesive layer of the film 10 tends to have a small content. It is preferable as the thermosetting resin in 12.

The thermoplastic resin in the adhesive layer 12 has, for example, a binder function. Examples of the thermoplastic resin in the adhesive layer 12 include those described above as the thermoplastic resin when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. The adhesive layer 12 may contain one type of thermoplastic resin, or may contain two or more types of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the adhesive layer 12 because it has few ionic impurities and high heat resistance.

When the adhesive layer 12 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio. As the (meth) acrylic acid ester for forming a monomer unit of such an acrylic resin, for example, the above-mentioned (meth) as a constituent monomer of the acrylic resin when the laser mark layer 11 contains an acrylic resin as a thermoplastic resin. ) Acrylic acid ester can be used. As the constituent monomer of the acrylic resin in the adhesive layer 12, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic resin may be composed of one or two or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, in order to modify its cohesive force and heat resistance. As such a monomer, for example, the above-mentioned monomer can be used as another monomer copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11.

The adhesive layer 12 may contain a filler. The blending of the filler into the adhesive layer 12 is preferable in order to adjust the physical properties such as the elastic modulus of the adhesive layer 12, the yield point strength, and the elongation at break. Examples of the filler in the adhesive layer 12 include those described above as the filler in the laser mark layer 11. The adhesive layer 12 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. When the adhesive layer 12 contains a filler, the average particle size of the filler is preferably 30 to 500 nm, more preferably 40 to 400 nm, and more preferably 50 to 300 nm. That is, the adhesive layer 12 preferably contains a nanofiller. The configuration in which the adhesive layer 12 contains nanofillers having such a particle size as a filler prevents or suppresses damage caused by the filler contained in the adhesive layer 12 for the work to be attached or mounted on the film 10. It is also suitable for ensuring high breakability of the film 10 to be fragmented. When the adhesive layer 12 contains a filler, the content of the filler is, for example, 30% by mass or more, preferably 40% by mass or more, and more preferably 50% by mass or more. The content is preferably less than 75% by mass.

The adhesive layer 12 may contain a colorant. Examples of the colorant in the adhesive layer 12 include those described above as the colorant in the laser mark layer 11. In order to secure high contrast between the engraved portion by the laser marking on the laser mark layer 11 side of the film 10 and the other portion and realize good visibility of the engraved information, the adhesive layer 12 is colored black. It is preferable to contain an agent. The adhesive layer 12 may contain one kind of colorant or may contain two or more kinds of colorants. The content of the colorant in the adhesive layer 12 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the colorant content are preferable in order to realize the above-mentioned good visibility of the marking information by laser marking.

The adhesive layer 12 may contain one kind or two or more kinds of other components, if necessary. Examples of the other component include flame retardants, silane coupling agents, and ion trapping agents.

The thickness of the adhesive layer 12 is, for example, 5 to 20 μm.

The thickness of the film 10 having the above structure is, for example, 10 to 40 μm.

The base material 21 of the dicing tape 20 in the composite film X (semiconductor back contact film integrated with the dicing tape) is an element that functions as a support in the dicing tape 20 or the composite film X, and is, for example, a plastic film. Examples of the constituent materials of the base material 21 include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenyl sulfide, and aramid. , Fluororesin, Cellulosic resin, and Silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolyprolene, polybutene, and polymethylpentene. Examples include ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Be done. Examples of polyesters include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 21 may be made of one kind of material or may be made of two or more kinds of materials. The base material 21 may have a single-layer structure or a multi-layer structure. When the base material 21 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. The base material 21 may be made of one kind of material or may be made of two or more kinds of materials. The base material 21 may have a single-layer structure or a multi-layer structure. When the pressure-sensitive adhesive layer 22 on the base material 21 is UV-curable as described later, the base material 21 preferably has UV-transmissibility.

The surface of the base material 21 on the pressure-sensitive adhesive layer 22 side may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 22. Physical treatments include, for example, corona treatment, plasma treatment, sandmat treatment, ozone exposure treatment, flame exposure treatment, high-voltage impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment.

The thickness of the base material 21 is preferably 40 μm or more, preferably 50 μm or more, and more preferably 60 μm from the viewpoint of ensuring the strength for the base material 21 to function as a support in the dicing tape 20 or the composite film X. That is all. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 20 or the composite film X, the thickness of the base material 21 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less.

The pressure-sensitive adhesive layer 22 of the dicing tape 20 contains a pressure-sensitive adhesive. This adhesive may be an adhesive (adhesive strength-reducable adhesive) capable of intentionally reducing the adhesive strength by an external action, or the adhesive strength is almost the same depending on the external action. Alternatively, it may be an adhesive that does not reduce at all (adhesive strength non-reducing type adhesive).

Examples of the adhesive force-reducable adhesive include an adhesive that can be cured by irradiation (radiation-curable adhesive). In the pressure-sensitive adhesive layer 22 of the present embodiment, one type of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used.

Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 include a type of pressure-sensitive adhesive that is cured by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays. A curable type pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

The radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 includes, for example, a base polymer such as an acrylic polymer which is an acrylic pressure-sensitive adhesive, and a radiation-polymerizable product having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include an additive-type radiation-curable pressure-sensitive adhesive containing the above-mentioned monomer component and oligomer component.

The acrylic polymer described above preferably contains the most monomer unit derived from the (meth) acrylic acid ester in terms of mass ratio. Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic polymer, include (meth) acrylic acid alkyl ester and (meth) acrylic. Acid cycloalkyl esters and (meth) acrylic acid aryl esters are mentioned, and more specifically, the same (meth) acrylic acid esters as described above for the acrylic resin in the laser mark layer 11 of the film 10. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, in order to appropriately express the basic properties such as the adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 22, the ratio of the (meth) acrylic acid ester in the entire constituent monomers of the acrylic polymer is, for example, 40. It is mass% or more.

Acrylic polymers include monomer units derived from one or more other monomers copolymerizable with (meth) acrylic acid esters, for example due to modification of their cohesiveness and heat resistance. May be good. Such monomers include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Specifically, the above-mentioned ones can be mentioned as other monomers copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11 of the film 10.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropanthry (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane ( Meta) acrylate can be mentioned. "(Meta) acrylate" shall mean "acrylate" and / or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order to appropriately express basic properties such as adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 22, the proportion of the polyfunctional monomer in the total constituent monomers of the acrylic polymer is, for example, 40% by mass or less. is there.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 may contain, for example, an external cross-linking agent in order to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external cross-linking agent for reacting with a base polymer such as an acrylic polymer to form a cross-linked structure include a polyisocyanate compound, an epoxy compound, a polyol compound, an aziridine compound, and a melamine-based cross-linking agent. The content of the external cross-linking agent in the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 is, for example, 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

Examples of the above-mentioned radiopolymerizable monomer component for forming a radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Examples include acrylates, dipentaerythritol monohydroxypenta (meth) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates. Examples of the above-mentioned radiation-polymerizable oligomer component for forming a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and have a molecular weight of about 100 to 30,000. The one is suitable. The total content of the radiopolymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range in which the adhesive strength of the formed pressure-sensitive adhesive layer 22 can be appropriately reduced, and a base polymer such as an acrylic polymer is used. For example, 5 to 500 parts by mass with respect to 100 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

The radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 includes, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the end of the polymer main chain in the polymer side chain or the polymer main chain. Also included is an intrinsically curable pressure-sensitive adhesive containing. Such an intrinsically curable pressure-sensitive adhesive is suitable for suppressing an unintended change in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 22.

As the base polymer contained in the intrinsic radiation-curable pressure-sensitive adhesive, one having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining the compound, a compound having a predetermined functional group (second functional group) capable of reacting with the first functional group and being bonded to the first functional group and a radiopolymerizable carbon-carbon double bond is obtained from carbon-carbon. Examples thereof include a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of the double bond.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of ease of reaction tracking. Further, since it is technically difficult to prepare a polymer having a highly reactive isocyanate group, from the viewpoint of easy preparation or availability of an acrylic polymer, the above-mentioned first functionality on the acrylic polymer side It is more preferable that the group is a hydroxy group and the second functional group is an isocyanate group. In this case, an isocyanate compound having both a radiopolymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a radiopolymerizable unsaturated functional group-containing isocyanate compound includes, for example, methacryloyl isocyanate, 2 Included are methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate.

The radiation curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples include quinone, halogenated ketones, acylphosphinoxides, and acylphosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxypro. Examples include piophenone and 1-hydroxycyclohexylphenyl ketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)-). Phenyl] -2-morpholinopropane-1 can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal-based compound include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Benzophenone compounds include, for example, benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

Examples of the non-reducing adhesive strength type adhesive include a pressure-sensitive pressure-sensitive adhesive and a pressure-sensitive pressure-sensitive pressure-sensitive adhesive, which is obtained by pre-curing the above-mentioned radiation-curable pressure-sensitive adhesive by irradiation with radiation. , Can be mentioned. Depending on the type and content of the polymer component contained therein, the radiation-curable pressure-sensitive adhesive may exhibit adhesiveness due to the polymer component even when the adhesive strength is reduced by radiation curing, and may be used in a predetermined mode of use. It is possible to exert the adhesive force that can be used to hold the adherend adhesively. In the pressure-sensitive adhesive layer 22 of the present embodiment, one kind of non-reducing adhesive strength type pressure-sensitive adhesive may be used, or two or more kinds of non-reducing pressure-sensitive pressure-sensitive adhesives may be used.

On the other hand, as the pressure-sensitive pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22, for example, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 22 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive pressure-sensitive pressure-sensitive adhesive, the acrylic polymer, which is the base polymer of the acrylic pressure-sensitive adhesive, preferably contains a monomer unit derived from (meth) acrylic acid ester in a mass ratio. Including the most. Examples of such an acrylic polymer include the acrylic polymers described above for radiation-curable pressure-sensitive adhesives.

The pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 may contain, in addition to the above-mentioned components, a cross-linking accelerator, a pressure-sensitive adhesive, an anti-aging agent, a colorant such as a pigment or a dye, and the like. The colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 22 is, for example, 2 to 20 μm. Such a configuration is suitable for balancing the adhesive force of the pressure-sensitive adhesive layer 22 on the film 10 before and after the radiation curing when the pressure-sensitive adhesive layer 22 contains a radiation-curable pressure-sensitive adhesive, for example.

The composite film X, which is a semiconductor back-adhesion film integrated with a dicing tape, has a peeling angle of 180 ° and a tensile speed of 300 mm between the film 10 and the dicing tape 20 in the first test piece (prepared from the composite film X). Based on the first peeling adhesive strength measured in the peeling test under the condition of / minute, the first semiconductor back contact film test piece (prepared from composite film X or its film 10) bonded to the silicon wafer flat surface at 70 ° C. The second peeling adhesive force measured in the peeling test under the conditions of 25 ° C., a peeling angle of 180 ° and a tensile speed of 300 mm / min between the silicon wafer plane and 25 ° C. is large. The first test piece is a test piece prepared by cutting out from the composite film X. The first semiconductor back-adhesion film test piece is a test piece prepared by peeling the film 10 from the composite film X, attaching a backing tape to the surface exposed by the peeling, and cutting out from the bonded body. .. The second peeling adhesive force corresponds to the peeling adhesive force between the work contact surface 12a of the film 10 (semiconductor back contact film) and the silicon wafer flat surface in the composite film X. Further, in the present embodiment, the peeling adhesive force against the silicon wafer flat surface means the peeling adhesive force against the silicon wafer flat surface finished by the No. 2000 abrasive.

Such a configuration is suitable for ensuring good adhesion to the wafer at, for example, at room temperature or in the vicinity thereof after the composite film X is bonded to the semiconductor wafer as the work by the film 10.

The composite film X is a peeling test between the film 10 and the dicing tape 20 in the second test piece (prepared from the composite film X) under the conditions of 60 ° C., a peeling angle of 180 °, and a tensile speed of 300 mm / min. Based on the measured third peeling adhesive strength, the second semiconductor back-adhesion film test piece (prepared from the composite film X or its film 10) bonded to the silicon wafer flat surface at 70 ° C. and the silicon wafer flat surface The fourth peeling adhesive force measured in the peeling test under the conditions of 60 ° C., peeling angle 180 ° and tensile speed 300 mm / min is small. The second test piece is a test piece prepared by cutting out from the composite film X. The second semiconductor back contact film test piece is a test piece prepared by peeling the film 10 from the composite film X, sticking a backing tape on the surface exposed by the peeling, and cutting out from the bonded body. .. The fourth peeling adhesive force corresponds to the peeling adhesive force between the work contact surface 12a of the film 10 (semiconductor back contact film) and the silicon wafer flat surface in the composite film X.

Such a configuration is suitable for laminating the composite film X on the semiconductor wafer which is the work on the film 10 and then heating the composite film X to, for example, 60 ° C. and then peeling it off from the wafer. Therefore, the laminating is reworked. Suitable for.

As described above, the composite film X is suitable for ensuring good adhesion to the semiconductor wafer and has reworkability in bonding.

In the present embodiment, the composite film X is a peeling angle at 25 ° C. between the film 10 and the dicing tape 20 in the third test piece (prepared from the composite film X) that has been heat-treated at 80 ° C. for 1 hour. Based on the fifth peeling adhesive strength measured in the peeling test under the conditions of 180 ° and a tensile speed of 300 mm / min, the silicon wafer surface was bonded to the silicon wafer plane at 70 ° C. and then heat-treated at 80 ° C. for 1 hour. In the peeling test between the semiconductor back contact film test piece (prepared from the composite film X or its film 10) and the silicon wafer flat surface under the conditions of 25 ° C., peeling angle 180 ° and tensile speed 300 mm / min. The sixth peeling adhesive strength to be measured is large. The third test piece is a test piece prepared by cutting out from the composite film X. The third semiconductor back contact film test piece is a test piece prepared by peeling the film 10 from the composite film X, sticking a backing tape on the surface exposed by the peeling, and cutting out from the bonded body. .. The sixth peeling adhesive force corresponds to the peeling adhesive force between the work contact surface 12a of the film 10 (semiconductor back contact film) and the silicon wafer flat surface in the composite film X.

Such a configuration is such that the composite film X is bonded to the semiconductor wafer and the ring frame without, for example, without any misalignment, and then the composite film X to the film 10 is heat-treated under the conditions of, for example, 80 ° C. and 1 hour. It is suitable for suppressing peeling of the composite film X (dicing tape-integrated semiconductor back-adhesive film) or film 10 from the semiconductor wafer after bonding.

In the present embodiment, the composite film X is 60 ° C., a peeling angle between the film 10 and the dicing tape 20 in the fourth test piece (prepared from the composite film X) that has been heat-treated at 80 ° C. for 1 hour. Based on the 7th peeling adhesive strength measured in the peeling test under the conditions of 180 ° and a tensile speed of 300 mm / min, the silicon wafer was bonded to the silicon wafer plane at 70 ° C. and then heat-treated at 80 ° C. for 1 hour. In the peeling test between the semiconductor back contact film test piece (prepared from the composite film X or its film 10) and the silicon wafer flat surface under the conditions of 60 ° C., peeling angle 180 ° and tensile speed 300 mm / min. The measured 7th peeling adhesive force is large. The fourth test piece is a test piece prepared by cutting out from the composite film X. The fourth semiconductor back-adhesion film test piece is a test piece prepared by peeling the film 10 from the composite film X, attaching a backing tape to the surface exposed by the peeling, and cutting out from the bonded body. .. The eighth peeling adhesive force corresponds to the peeling adhesive force between the work contact surface 12a of the film 10 (semiconductor back contact film) and the silicon wafer flat surface in the composite film X.

Such a configuration is such that the composite film X is bonded to the semiconductor wafer and the ring frame without, for example, without any misalignment, and then the composite film X to the film 10 is heat-treated under the conditions of, for example, 80 ° C. and 1 hour. It is suitable for suppressing peeling of the composite film X (dicing tape-integrated semiconductor back-adhesive film) or film 10 from the semiconductor wafer after bonding.

The first peeling adhesive strength is preferably 0.2 to 3 N / 20 mm. The second peeling adhesive strength is preferably 3N / 20 mm or more. The third peeling adhesive strength is preferably 0.2 to 3 N / 20 mm. The fourth peeling adhesive strength is preferably 0.2 N / 20 mm or less. The fifth peeling adhesive strength is preferably 3N / 20 mm or less. The sixth peeling adhesive strength is preferably 3N / 20 mm or more. The seventh peeling adhesive strength is preferably 3N / 20 mm or less. The eighth peeling adhesive strength is preferably 3N / 20 mm or more. These configurations are suitable for realizing the above-mentioned magnitude relationship of the peeling adhesive force.

The peeling adhesive strength between the film 10 and the dicing tape 20 in the composite film X is adjusted by, for example, adjusting the constituent monomer composition of the polymer such as the acrylic polymer contained in the film 10 or the laser mark layer 11 thereof, and the dicing tape 20. This can be done by adjusting the composition of the constituent monomers of the polymer such as the acrylic polymer in the pressure-sensitive adhesive layer 22 and adjusting the content of the cross-linking agent. Further, the peeling adhesive force between the work contact surface 12a of the film 10 and the silicon wafer flat surface is adjusted by, for example, adjusting the composition of a polymer such as an acrylic polymer in the film 10 or its adhesive layer 12 and adjusting the composition of a polymer such as an inorganic filler. This can be done by adjusting the content.

The composite film X having the above structure can be produced, for example, as follows.

In the production of the film 10 in the composite film X, first, the film forming the laser mark layer 11 and the film forming the adhesive layer 12 are individually produced. The film forming the laser mark layer 11 is formed by applying a resin composition for forming a laser mark layer on a predetermined separator to form a resin composition layer, and then drying and curing the composition layer by heating. By doing so, it can be produced. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and plastic film and paper surface-coated with a release agent such as a fluorine-based release agent and a long-chain alkyl acrylate-based release agent. Can be mentioned. Examples of the method for applying the resin composition include roll coating, screen coating, and gravure coating. In the production of the film forming the laser mark layer 11, the heating temperature is, for example, 90 to 160 ° C., and the heating time is, for example, 2 to 4 minutes. On the other hand, the film forming the adhesive layer 12 is formed by applying a resin composition for forming an adhesive layer on a predetermined separator to form a resin composition layer, and then drying the composition layer by heating. , Can be made. In the production of the film forming the adhesive layer 12, the heating temperature is, for example, 90 to 150 ° C., and the heating time is, for example, 1 to 2 minutes. As described above, the above-mentioned two types of films can be produced in the form of each having a separator. Then, the exposed surfaces of these films are pasted together. As a result, a film 10 (with separators on both sides) having a laminated structure of the laser mark layer 11 and the adhesive layer 12 is produced.

The dicing tape 20 of the composite film X can be produced by providing the pressure-sensitive adhesive layer 22 on the prepared base material 21. For example, the resin base material 21 is produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry laminating method. can do. The film or the base material 21 after the film formation is subjected to a predetermined surface treatment as needed. In the formation of the pressure-sensitive adhesive layer 22, for example, after preparing the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, the composition is first applied on the base material 21 or a predetermined separator to form the pressure-sensitive adhesive composition layer. To form. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive composition layer, it is dried by heating if necessary, and a cross-linking reaction is caused if necessary. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the separator, the pressure-sensitive adhesive layer 22 with the separator is attached to the base material 21, and then the separator is peeled off. As a result, the dicing tape 20 having a laminated structure of the base material 21 and the pressure-sensitive adhesive layer 22 is produced.

In the production of the composite film X, the film 10 with the separator is punched into a disk shape having a predetermined diameter, and then the separator is peeled off from the laser mark layer 11 side of the film 10 to form the adhesive layer 22 side of the dicing tape 20. The laser mark layer 11 side of the film 10 is bonded together. The bonding temperature is, for example, 30 to 50 ° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm. Next, the dicing tape 20 thus bonded to the film 10 is punched into a disk shape having a predetermined diameter so that the center of the dicing tape 20 and the center of the film 10 coincide with each other.

As described above, the composite film X can be produced. The separator is peeled off from the composite film X when it is used.

The film 10 may have a single-layer structure instead of the multi-layer structure as described above. When the film 10 has a single-layer structure, in the present embodiment, the film 10 is a thermosetting resin composition layer, that is, a thermosetting layer in an uncured or semi-cured state. When the film 10 has a single-layer structure, the surface of the film 10 on the dicing tape 20 side is laser-marked in the manufacturing process of the semiconductor device. In such a single-layered film 10, for example, the resin composition for forming the above-mentioned laser mark layer 11 is applied on a predetermined separator to form a resin composition layer, and then the composition layer is formed. It can be produced by heating and drying without completely curing.

When the film 10 has a composition containing a thermosetting resin and a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and the like. Examples include thermosetting polyimide resin. The film 10 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. Examples of the epoxy resin in the film 10 include those described above as the epoxy resin which is the thermosetting resin when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin.

The thermoplastic resin in the film 10 has, for example, a binder function. The thermoplastic resin when the film 10 has a composition containing a thermosetting resin and a thermoplastic resin is, for example, heat when the laser mark layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. Examples of the plastic resin include those described above. The film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins.

When the film 10 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from the (meth) acrylic acid ester in terms of mass ratio. As the (meth) acrylic acid ester for forming a monomer unit of such an acrylic resin, for example, the above-mentioned (meth) as a constituent monomer of the acrylic resin when the laser mark layer 11 contains an acrylic resin as a thermoplastic resin. ) Acrylic acid ester can be used. As the constituent monomer of the acrylic resin in the film 10, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic resin may be composed of one or two or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, in order to modify its cohesive force and heat resistance. As such a monomer, for example, the above-mentioned monomer can be used as another monomer copolymerizable with the (meth) acrylic acid ester for forming the acrylic resin in the laser mark layer 11.

The film 10 may contain a filler. The blending of the filler into the film 10 is preferable in order to adjust the physical properties such as the elastic modulus of the film 10, the yield point strength, and the elongation at break. Examples of the filler in the film 10 include those described above as the filler in the laser mark layer 11. The film 10 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. When the film 10 contains a filler, the average particle size of the filler is preferably 30 to 1000 nm, more preferably 40 to 700 nm, and more preferably 50 to 500 nm. That is, the film 10 preferably contains a nanofiller. The configuration in which the film 10 contains a nanofiller having such a particle size as a filler prevents or suppresses damage caused by the filler contained in the film 10 to the work to be attached or mounted on the film 10. It is also suitable for ensuring high breakability of the film 10 to be fragmented. When the film 10 contains a filler, the content of the filler is, for example, 30% by mass or more, preferably 40% by mass or more, and more preferably 50% by mass or more. The content is preferably less than 75% by mass.

When the film 10 has a single-layer structure, the film 10 contains a colorant. Examples of the colorant in the film 10 include those described above as the colorant in the laser mark layer 11. In order to secure high contrast between the engraved portion by the laser marking on the laser mark layer 11 side of the film 10 and the other portion and realize good visibility of the engraved information, the film 10 is a black colorant. Is preferably contained. The film 10 may contain one kind of colorant, or may contain two or more kinds of colorants. The content of the colorant in the film 10 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and more preferably 5% by weight or less. These configurations regarding the colorant content are preferable in order to realize the above-mentioned good visibility of the marking information by laser marking.

The film 10 may contain one kind or two or more kinds of other components, if necessary. Examples of the other component include flame retardants, silane coupling agents, and ion trapping agents.

When the film 10 has a single-layer structure, the thickness of the film 10 is, for example, 5 to 40 μm.

3 to 7 show an example of a semiconductor device manufacturing method in which the above-mentioned composite film X is used.

In the present semiconductor device manufacturing method, first, as shown in FIGS. 3A and 3B, the wafer W is thinned by grinding (wafer thinning step). The grinding process can be performed using a grinding device equipped with a grinding wheel. The wafer W is a semiconductor wafer and has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. ing. The second surface Wb is a so-called back surface or back surface. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the first surface Wa side of the wafer W, the wafer W is held in a state where the wafer W is held by the wafer processing tape T1 and the wafer W has a predetermined thickness. Up to this point, the second surface Wb is ground to obtain a thinned wafer 30.

Next, as shown in FIG. 4A, the composite film X is attached to the wafer 30 and the ring frame 41. Specifically, the film 10 of the composite film X is attached to the wafer 30 and the dicing tape 20 to the dicing tape 20 to the ring frame 41 arranged so as to surround the wafer 30 held by the wafer processing tape T1. The bonding work of the composite film X is performed so that the pressure-sensitive adhesive layer 22 is attached to the ring frame 41. After that, as shown in FIG. 4B, the wafer processing tape T1 is peeled off from the wafer 30.

Next, the laser mark layer 11 of the film 10 in the composite film X is irradiated with a laser from the side of the base material 21 of the dicing tape 20 to perform laser marking (laser marking step). By this laser marking, various information such as character information and graphic information is engraved on each semiconductor element that is later fragmented into a semiconductor chip. In this step, in one laser marking process, it is possible to collectively and efficiently perform laser marking on a large number of semiconductor elements in the wafer 30. Examples of the laser used in this step include a gas laser and a solid-state laser. Examples of the gas laser include a carbon dioxide gas laser (CO ₂ laser) and an excimer laser. Examples of the solid-state laser include an Nd: YAG laser.

Next, after the ring frame 41 is attached to the pressure-sensitive adhesive layer 22 of the composite film X, the composite film X with the ring frame 41 is held by the holder 42 of the apparatus, and as shown in FIG. , Cutting is performed by the dicing blade provided in the dicing device (dicing process). In FIG. 5, the cutting portion is schematically represented by a thick line. In this step, the wafer 30 is fragmented into chips 31, and at the same time, the film 10 of the composite film X is cut into small pieces of film 10'. As a result, the chip 31 with the film 10'for forming the back surface protective film of the chip, that is, the chip 31 with the film 10'is obtained.

When the pressure-sensitive adhesive layer 22 of the dicing tape 20 contains a radiation-curable pressure-sensitive adhesive, instead of the above-mentioned irradiation in the manufacturing process of the composite film X, after the above-mentioned dicing step, from the side of the base material 21 The pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays. The integrated irradiation light amount is, for example, 50 to 1000 mJ / cm ² . In the composite film X, the region where the pressure-sensitive adhesive layer 22 is irradiated as a measure for reducing the adhesive strength is, for example, as shown in FIG. 2, a region R in the pressure-sensitive adhesive layer 22 excluding the peripheral portion of the film 10 bonding region. is there.

Next, a cleaning step of cleaning the chip 31 side of the dicing tape 20 with the chip 31 with the film 10'using a cleaning liquid such as water, and an expanding step for widening the separation distance between the chips 31 with the film 10'are performed. After passing through as necessary, the chip 31 with the film 10'is picked up from the dicing tape 20 (pickup step), as shown in FIG. For example, after holding the composite film X with the ring frame 41 on the holder 42 of the apparatus, the pin member 43 of the pickup mechanism is placed on the lower side of the dicing tape 20 in the drawing for the chip 31 with the film 10'to be picked up. After raising it and pushing it up through the dicing tape 20, it is sucked and held by the suction jig 44. In the pick-up step, the push-up speed of the pin member 43 is, for example, 1 to 160 mm / sec, and the push-up amount of the pin member 43 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7, the chip 31 with the film 10'is flip-chip mounted on the mounting substrate 51. Examples of the mounting board 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. The chip 31 is electrically connected to the mounting substrate 51 via a bump 52. Specifically, the electrode pad (not shown) of the chip 31 on the circuit forming surface side and the terminal portion (not shown) of the mounting substrate 51 are electrically connected via the bump 52. The bump 52 is, for example, a solder bump. Further, a thermosetting underfill agent 53 is interposed between the chip 31 and the mounting substrate 51.

As described above, the semiconductor device can be manufactured by using the composite film X.

[Example 1]
<Manufacturing of semiconductor back contact film>
In the production of the semiconductor back-adhesive film, first, acrylic resin A ₁ (trade name "Taisan Resin SG-P3", weight average molecular weight is 850,000, glass transition temperature Tg is 12 ° C., manufactured by Nagase ChemteX Corporation) 100 mass. 80 parts by mass of epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) and 34 parts by mass of epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation) And phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) 119 parts by mass and filler (trade name "SO-25R", silica, average particle size 0.5 μm, manufactured by Admatex Co., Ltd.) 250 parts by mass, black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) 33 parts by mass, and thermosetting catalyst (trade name "Curesol 2PHZ-PW", manufactured by Shikoku Kasei Kogyo Co., Ltd.) 6 The parts by mass were added to the methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 28% by mass. Next, the adhesive composition is applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. did. Next, this composition layer is heated at 130 ° C. for 2 minutes to dry, and a 25 μm-thick semiconductor back-adhesive film of Example 1 (a thermosetting single layer in an uncured state is formed on a PET separator. A film to be made) was produced. The composition of each layer in Example 1 and each of Examples and Comparative Examples described later is listed in Tables 1 and 2 (in Tables 1 and 2, the composition of each layer is represented by the mass ratio of the components).

<Making dicing tape>
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), and A mixture containing benzoyl peroxide as a polymerization initiator, 0.4 parts by mass of toluene, and 80 parts by mass of toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours in a nitrogen atmosphere (polymerization reaction). By this polymerization reaction, a polymer solution containing an acrylic polymer P ₁ was obtained. Next, 12 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) was added to the solution containing the acrylic polymer P ₁ , and then the mixture was stirred at 50 ° C. for 60 hours in an air atmosphere (addition reaction). As a result, a polymer solution containing an acrylic polymer P ₂ having a methacryloyl group in the side chain was obtained. Next, the polymer solution and 0.25 parts by mass of a cross-linking agent (trade name "Coronate L", polyisocyanate compound, manufactured by Toso Co., Ltd.) with respect to 100 parts by mass of the acrylic polymer P ₂ contained therein, and 2 A photopolymerization initiator (trade name “Irgacure 651”, manufactured by BASF) by mass and a predetermined amount of toluene were mixed to obtain a pressure-sensitive adhesive composition having a solid content concentration of 28% by mass. Next, the pressure-sensitive adhesive composition was applied on the silicone release-treated surface of the PET separator having the surface subjected to the silicone release treatment using an applicator to form a pressure-sensitive adhesive composition layer. Next, this composition layer was heat-dried at 120 ° C. for 2 minutes to form an adhesive layer having a thickness of 10 μm on the PET separator. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB0103", thickness 125 μm, manufactured by Kurabo Industries Ltd.) was applied to the exposed surface of this pressure-sensitive adhesive layer at room temperature. I pasted them together. As described above, the dicing tape of Example 1 having a laminated structure including the base material and the ultraviolet curable pressure-sensitive adhesive layer was produced. Tables 1 and 2 show the blending amounts of the cross-linking agent in the dicing tape (DT) pressure-sensitive adhesive layer in Example 1 and each of Examples and Comparative Examples described later.

<Manufacturing of semiconductor back contact film with integrated dicing tape>
The above-mentioned semiconductor back contact film of Example 1 with a PET separator was punched into a disk shape having a diameter of 330 mm. Next, after peeling the PET separator from the dicing tape described above, the adhesive layer exposed on the dicing tape and the semiconductor back-adhesive film with the PET separator were bonded together using a hand roller. Next, the dicing tape thus bonded to the semiconductor back-adhesion film was punched into a disk shape having a diameter of 370 mm so that the center of the dicing tape and the center of the semiconductor back-adhesion film coincided with each other. As described above, the dicing tape-integrated semiconductor back-adhesion film of Example 1 having a laminated structure including the dicing tape and the semiconductor back-adhesion film was produced.

[Examples 2 and 3]
In forming the dicing tape pressure-sensitive adhesive layer, the amount of the cross-linking agent (trade name "Coronate L") was changed to 1 part by mass (Example 2) or 5 parts by mass (Example 3) instead of 0.25 parts by mass. Except for this, the dicing tape-integrated semiconductor back-adhesive film of Examples 2 and 3 was produced in the same manner as the dicing tape-integrated semiconductor back-adhesion film of Example 1.

[Example 4]
In manufacturing a semiconductor back adhesive film, an epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Tohto Kasei Co., Ltd.) that was the amount 52 parts by weight in place of 80 parts by weight of epoxy resin E ₂ ( The amount of the product name "JER YL980" (manufactured by Mitsubishi Chemical Co., Ltd.) was changed to 22 parts by mass instead of 34 parts by mass, and the amount of phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) was 119. The amount of filler (trade name "SO-25R", silica, average particle size is 0.5 μm, manufactured by Admatex Co., Ltd.) was changed to 76 parts by mass instead of 250 parts by mass, and 188 parts by mass. The amount of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) was changed to 25 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curesol 2PHZ") was used. -PW ”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) was changed to 4 parts by mass instead of 6 parts by mass, except that the semiconductor back contact film of Example 4 was the same as the semiconductor back contact film of Example 1. Was produced. In forming the dicing tape pressure-sensitive adhesive layer, the dicing tape was carried out in the same manner as in Example 1 except that the amount of the cross-linking agent (trade name “Coronate L”) was 1 part by mass instead of 0.25 parts by mass. The dicing tape of Example 4 was prepared. Then, in the same manner as the dicing tape integrated semiconductor back contact film of Example 1, except that the semiconductor back contact film and dicing tape of Example 4 were used instead of the semiconductor back contact film and dicing tape of Example 1. , The semiconductor back contact film integrated with the dicing tape of Example 4 was produced.

[Example 5]
In manufacturing a semiconductor back adhesive film, an epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Tohto Kasei Co., Ltd.) that was the amount 34 parts by weight in place of 80 parts by weight of epoxy resin E ₂ ( The amount of the product name "JER YL980" (manufactured by Mitsubishi Chemical Co., Ltd.) was changed to 15 parts by mass instead of 34 parts by mass, and the amount of phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) was 119. 51 parts by mass was used instead of 250 parts by mass, and the amount of filler (trade name "SO-25R", silica, average particle size was 0.5 μm, manufactured by Admatex Co., Ltd.) was changed to 150 parts by mass instead of 250 parts by mass. The amount of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) was changed to 20 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curesol 2PHZ") was used. -PW ", manufactured by Shikoku Kasei Kogyo Co., Ltd.) was changed to 4 parts by mass instead of 6 parts by mass, except that the semiconductor back contact film of Example 5 was the same as the semiconductor back contact film of Example 1. Was produced. In forming the dicing tape pressure-sensitive adhesive layer, the dicing tape was carried out in the same manner as in Example 1 except that the amount of the cross-linking agent (trade name “Coronate L”) was 1 part by mass instead of 0.25 parts by mass. The dicing tape of Example 5 was prepared. Then, in the same manner as the dicing tape integrated semiconductor back contact film of Example 1, except that the semiconductor back contact film and dicing tape of Example 5 were used instead of the semiconductor back contact film and dicing tape of Example 1. , A semiconductor back contact film integrated with a dicing tape of Example 5 was produced.

[Example 6]
<Manufacturing of semiconductor back contact film>
In the production of the semiconductor back-adhesion film of Example 6, first, the first film that forms the laser mark layer (LM layer) and the second film that forms the adhesive layer (AH layer) are individually separated. Made in.

In the production of the first film, first, 100 parts by mass of acrylic resin A ₁ (trade name "Taisan Resin SG-P3", weight average molecular weight of 850,000, glass transition temperature Tg of 12 ° C., manufactured by Nagase ChemteX Corporation) And 43 parts by mass of epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Toto Kasei Co., Ltd.) and 11 parts by mass of epoxy resin E ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation). , Phenolic resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) 55 parts by mass and filler (trade name "SO-25R", silica, average particle size 0.5 μm, manufactured by Admatex Co., Ltd.) 229 By mass, 9 parts by mass of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) and 11 mass of thermal curing catalyst (trade name "Curesol 2PHZ-PW", manufactured by Shikoku Kasei Kogyo Co., Ltd.) The parts were added to and mixed with methyl ethyl ketone to obtain an adhesive composition having a solid content concentration of 28% by mass. Next, the adhesive composition is applied onto the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. did. Next, this composition layer is heated at 130 ° C. for 2 minutes to dry, and a first film (a laser mark layer which is a cured thermosetting layer) having a thickness of 12.5 μm is formed on a PET separator. Film) was produced.

In the production of the second film, first, acrylic resin A ₂ (trade name "Taisan Resin SG-708-6", weight average molecular weight is 700,000, glass transition temperature Tg is 4 ° C., manufactured by Nagase ChemteX Corporation) 100 Parts by mass, phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) 213 parts by mass, filler (trade name "SO-25R", silica, average particle size 0.5 μm, Admatex Co., Ltd. 258 parts by mass was added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 28% by mass. Next, the adhesive composition was applied onto the silicone release-treated surface of the PET separator having the surface subjected to the silicone release treatment using an applicator to form an adhesive composition layer. Next, this composition layer is heated at 130 ° C. for 2 minutes to dry, and a second film having a thickness of 12.5 μm (a film forming a non-thermosetting adhesive layer) is formed on a PET separator. Made.

The first film on the PET separator and the second film on the PET separator prepared as described above were bonded together using a laminator. Specifically, the exposed surfaces of the first and second films were bonded to each other under the conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, the semiconductor back contact film of Example 1 was produced.

<Making dicing tape>
In forming the dicing tape pressure-sensitive adhesive layer, the dicing tape was carried out in the same manner as in Example 1 except that the amount of the cross-linking agent (trade name “Coronate L”) was 1 part by mass instead of 0.25 parts by mass. The dicing tape of Example 6 was prepared.

<Manufacturing of semiconductor back contact film with integrated dicing tape>
The above-mentioned semiconductor back contact film of Example 6 with a PET separator was punched into a disk shape having a diameter of 330 mm. Next, after peeling the PET separator from the first film side of the semiconductor back-adhesion film and peeling the PET separator from the dicing tape of Example 6, the back surface of the semiconductor with the PET separator is attached to the adhesive layer of the dicing tape. The adhesive film was attached via the first film side using a hand roller. Next, the dicing tape thus bonded to the semiconductor back-adhesion film was punched into a disk shape having a diameter of 370 mm so that the center of the dicing tape and the center of the semiconductor back-adhesion film coincided with each other. As described above, the dicing tape-integrated semiconductor back-adhesion film of Example 6 having a laminated structure including the dicing tape and the semiconductor back-adhesion film was produced.

[Example 7]
In Example 6 except that the amount of the filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.) was changed to 168 parts by mass instead of 258 parts by mass in the preparation of the second film forming the adhesive layer. The dicing tape integrated semiconductor back contact film of Example 7 was produced in the same manner as the dicing tape integrated semiconductor back contact film.

[Comparative Example 1]
In manufacturing a semiconductor back adhesive film, an epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Tohto Kasei Co., Ltd.) that was the amount of 10 parts by weight in place of 80 parts by weight of epoxy resin E ₂ ( The amount of the product name "JER YL980" (manufactured by Mitsubishi Chemical Co., Ltd.) was changed to 10 parts by mass instead of 34 parts by mass, and the amount of phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) was 119. 22 parts by mass was used instead of 250 parts by mass, and the amount of filler (trade name "SO-25R", silica, average particle size was 0.5 μm, manufactured by Admatex Co., Ltd.) was replaced with 250 parts by mass and 101 parts by mass. The amount of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) was changed to 9 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curesol 2PHZ") was used. -PW ”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) was changed to 4 parts by mass instead of 6 parts by mass, except that the semiconductor back contact film of Comparative Example 1 was the same as the semiconductor back contact film of Example 1. Was produced. In the formation of the dicing tape pressure-sensitive adhesive layer, the comparison was made in the same manner as the dicing tape of Example 1 except that the amount of the cross-linking agent (trade name “Coronate L”) was 5 parts by mass instead of 0.25 parts by mass. The dicing tape of Example 1 was prepared. Then, the same as the dicing tape integrated semiconductor back contact film of Example 1 except that the semiconductor back contact film and dicing tape of Comparative Example 1 were used instead of the semiconductor back contact film and dicing tape of Example 1. , A semiconductor back-adhesion film integrated with a dicing tape of Comparative Example 1 was produced.

[Comparative Example 2]
In manufacturing a semiconductor back adhesive film, an epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Tohto Kasei Co., Ltd.) that was the amount of 10 parts by weight in place of 80 parts by weight of epoxy resin E ₂ ( The amount of the product name "JER YL980" (manufactured by Mitsubishi Chemical Co., Ltd.) was changed to 10 parts by mass instead of 34 parts by mass, and the amount of phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) was 119. 22 parts by mass was used instead of 250 parts by mass, and the amount of filler (trade name "SO-25R", silica, average particle size was 0.5 μm, manufactured by Admatex Co., Ltd.) was replaced with 250 parts by mass and 101 parts by mass. The amount of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) was changed to 9 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curesol 2PHZ") was used. -PW ”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) was changed to 4 parts by mass instead of 6 parts by mass, except that the dicing tape integrated semiconductor back-adhesive film of Example 1 was used in Comparative Example 2. A semiconductor back-adhesion film with an integrated dicing tape was produced.

[Comparative Example 3]
In manufacturing a semiconductor back adhesive film, an epoxy resin E ₁ (trade name "KI-3000-4", manufactured by Tohto Kasei Co., Ltd.) that was the amount 138 parts by weight in place of 80 parts by weight of epoxy resin E ₂ ( The amount of the product name "JER YL980" (manufactured by Mitsubishi Chemical Co., Ltd.) was changed to 138 parts by mass instead of 34 parts by mass, and the amount of phenol resin (trade name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) was 119. 291 parts by mass instead of 250 parts by mass, and 471 parts by mass instead of 250 parts by mass of filler (trade name "SO-25R", silica, average particle size 0.5 μm, manufactured by Admatex Co., Ltd.) The amount of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industry Co., Ltd.) was changed to 40 parts by mass instead of 33 parts by mass, and the thermosetting catalyst (trade name "Curesol 2PHZ") was used. -PW ”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) was changed to 17 parts by mass instead of 6 parts by mass, but in the same manner as the dicing tape integrated semiconductor back contact film of Example 1, Comparative Example 3 A semiconductor back-adhesion film with an integrated dicing tape was produced.

[Comparative Example 4]
In the production of the second film, the amount of the filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.) was changed to 313 parts by mass instead of 258 parts by mass in the same manner as the semiconductor back contact film of Example 6. Therefore, the semiconductor back-adhesion film of Comparative Example 4 was produced. Comparative Example in the same manner as the dicing tape of Example 1 except that the amount of the cross-linking agent (trade name “Coronate L”) was 5 parts by mass instead of 0.25 parts by mass in the formation of the dicing tape pressure-sensitive adhesive layer. The dicing tape of No. 4 was prepared. Then, in the same manner as the dicing tape integrated semiconductor back contact film of Example 6 except that the semiconductor back contact film and dicing tape of Comparative Example 4 were used instead of the semiconductor back contact film and dicing tape of Example 6. A semiconductor back contact film integrated with a dicing tape of Comparative Example 4 was produced.

[Comparative Example 5]
In the production of the second film, the amount of the filler (trade name "SO-25R", manufactured by Admatex Co., Ltd.) was changed to 78 parts by mass instead of 258 parts by mass in the same manner as the semiconductor back contact film of Example 6. Then, the semiconductor back contact film of Comparative Example 5 was produced. Then, the dicing tape integrated type of Example 6 is used except that the semiconductor back contact film of Comparative Example 5 and the same dicing tape as the dicing tape of Example 1 are used instead of the semiconductor back contact film and dicing tape of Example 6. The dicing tape-integrated semiconductor back-adhesion film of Comparative Example 5 was produced in the same manner as the semiconductor back-adhesion film.

<First peeling adhesive strength>
For each of the dicing tape-integrated semiconductor back-adhesive films of Examples 1 to 7 and Comparative Examples 1 to 5, the peeling adhesive force between the dicing tape and the semiconductor back-adhesion film at 25 ° C. was measured. First, a backing tape (trade name "BT-315", manufactured by Nitto Denko KK) was attached to the semiconductor back contact film side of the dicing tape integrated semiconductor back contact film using a hand roller. Next, a test piece (first test piece) having a width of 20 mm and a length of 200 mm was cut out from the dicing tape-integrated semiconductor back-adhesion film with the backing tape. Next, the dicing tape side of this test piece was attached to a silicon wafer via a double-sided adhesive tape having a strong adhesive force. Then, the test piece is subjected to a peeling test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the first step between the dicing tape and the semiconductor back-adhesive film is performed. The peeling adhesive strength F ₁ (N / 20 mm) was measured. In this measurement, the temperature condition was 25 ° C., the peeling angle was 180 °, and the tensile speed was 300 mm / min. The results are listed in Tables 1 and 2.

<Second peeling adhesive strength>
The peeling adhesive force of the semiconductor back-adhesive film on the work-attached surface of each dicing tape-integrated semiconductor back-adhesive film of Examples 1 to 7 and Comparative Examples 1 to 5 at 25 ° C. was examined. First, in the dicing tape-integrated semiconductor back-adhesive film, the adhesive layer is cured by irradiating the adhesive layer with ultraviolet rays having an integrated irradiation light amount of 300 mJ / cm ² from the base material side of the dicing tape, and then the dicing tape is cured. The semiconductor back contact film was peeled off from the dicing tape of the integrated semiconductor back contact film. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko KK) was attached to the dicing tape side surface (the surface exposed by the peeling) of the peeled semiconductor back contact film. Next, a test piece (first semiconductor back contact film test piece) having a width of 20 mm and a length of 200 mm, which had a laminated structure of a semiconductor back contact film and a backing tape, was cut out from this bonded body. Next, the surface temperature of a silicon wafer (8 inches in diameter, 500 μm in thickness) having a polished surface (mirror-finished surface) finished with a No. 2000 abrasive and placed on a hot plate at 70 ° C. After confirming that the temperature was 70 ° C., the surface of the test piece on the semiconductor back contact film side was bonded to the mirror-finished surface of the silicon wafer. The bonding was performed by a crimping operation in which a 2 kg hand roller was reciprocated twice. After bonding, the wafer with the test piece was allowed to stand on a hot plate for 1 minute. Then, the test piece is subjected to a peeling test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the test piece (first semiconductor back contact film test piece). The second peeling adhesive force F ₂ (N / 20 mm) between the surface and the silicon wafer flat surface was measured. In this measurement, the temperature condition was 25 ° C., the peeling angle was 180 °, and the tensile speed was 300 mm / min. The results are listed in Tables 1 and 2. In this peeling test, when peeling occurs at the interface between the backing tape (trade name "BT-315") and the semiconductor back adhesion film, the fact that the second peeling adhesive force F ₂ exceeds 8N / 20mm is shown in the table. (The same applies to the measurement results of the peeling test described later, which measures the peeling adhesive strength between the semiconductor back-adhesive film and the silicon wafer).

<Third peeling adhesive strength>
For each of the dicing tape-integrated semiconductor back-adhesive films of Examples 1 to 7 and Comparative Examples 1 to 5, the peeling adhesive force between the dicing tape and the semiconductor back-adhesion film at 60 ° C. was measured. Specifically, a test piece for measuring the third peeling adhesive strength (second test piece) was prepared in the same manner as the test piece for measuring the first peeling adhesive strength, and the test piece was subjected to a tensile tester (trade name). A peeling test was performed using "Autograph AGS-J" (manufactured by Shimadzu Corporation), and the third peeling adhesive force F ₃ (N / 20 mm) between the dicing tape and the semiconductor back contact film was measured. .. In this measurement, the temperature condition was 60 ° C., the peeling angle was 180 °, and the tensile speed was 300 mm / min. The results are listed in Tables 1 and 2.

<Fourth peeling adhesive strength>
The peeling adhesive force of the semiconductor back-adhesive film on the work-attached surface of each of the dicing tape-integrated semiconductor back-adhesive films of Examples 1 to 7 and Comparative Examples 1 to 5 at 60 ° C. was examined. Specifically, a test piece for measuring the third peeling adhesive strength (second semiconductor back contact film test piece) is prepared in the same manner as the test piece for measuring the second peeling adhesive strength, and the temperature measured in the peeling test is measured. In the same manner as described above for the second peeling adhesive strength measurement, except that the temperature was changed to 60 ° C instead of 25 ° C, the semiconductor back contact film test piece was attached to the silicon wafer and the peeling test was performed, and the test piece and silicon were subjected to the peeling test. The fourth peeling adhesive force F ₄ (N / 20 mm) with respect to the wafer flat surface was measured. The results are listed in Tables 1 and 2.

<Evaluation of adhesion to wafer at 25 ° C>
The adhesion of the semiconductor back-adhesion film to the silicon wafer at 25 ° C. in each of the dicing tape-integrated semiconductor back-adhesion films of Examples 1 to 7 and Comparative Examples 1 to 5 was examined. First, using a laminator, a dicing tape-integrated semiconductor back surface adheres to the mirror-finished surface of a silicon wafer (8 inches in diameter and 500 μm in thickness) having a polished surface (mirror-finished surface) finished with a No. 2000 grinding material. The films were bonded together, and then a silicon wafer with a semiconductor back-adhesion film integrated with a dicing tape was allowed to stand for 20 minutes in a room temperature environment. In bonding, the temperature is 70 ° C., the bonding speed is 10 mm / min, and the pressure is 0.15 MPa. Next, a silicon wafer with a dicing tape-integrated semiconductor back-adhesive film is placed on a hot plate at 25 ° C. so that the wafer is in contact with the hot plate surface, and 30 seconds later, the dicing tape in the dicing tape-integrated semiconductor back-adhesion film is placed. Was slowly pulled by hand to peel it off from the wafer. In this peeling operation, the peeling angle of the dicing tape is set to be within the range of 100 ° to 180 °, and the tensile speed is about 1 to 300 mm / min. Regarding the adhesion of the semiconductor back-adhesive film to the wafer at 25 ° C, the case where the peeling occurs at the interface between the dicing tape and the semiconductor back-adhesive film is evaluated as "good", and the peeling work causes the semiconductor back-adhesion film and silicon. The case where peeling occurred at the interface of the wafer was evaluated as "defective". The evaluation results are listed in Tables 1 and 2.

<Evaluation of peelability against wafer at 60 ° C>
The peelability of the semiconductor back-adhesive film in each of the dicing tape-integrated semiconductor back-adhesion films of Examples 1 to 7 and Comparative Examples 1 to 5 from the silicon wafer at 60 ° C. was examined. Specifically, the dicing tape-integrated semiconductor on the silicon wafer is the same as described above for the evaluation of the adhesion of the wafer to the wafer at 25 ° C, except that the temperature of the hot plate is set to 60 ° C instead of 25 ° C. The back-adhesive film was attached and peeled off. Regarding the peelability of the semiconductor back-adhesive film to the wafer at 60 ° C., the case where the peeling occurs at the interface between the semiconductor back-adhesive film and the silicon wafer is evaluated as "good", and the dicing tape and the semiconductor back-adhesion are evaluated by the peeling work. The case where peeling occurred at the interface of the film was evaluated as "defective". The evaluation results are listed in Tables 1 and 2.

<Fifth peeling adhesive strength>
For each of the dicing tape-integrated semiconductor back-adhesive films of Examples 1 to 7 and Comparative Examples 1 to 5, the peeling adhesive force between the dicing tape and the semiconductor back-adhesive film at 25 ° C. after undergoing a predetermined heat treatment was measured. did. First, the dicing tape-integrated semiconductor back-adhesion film was heat-treated at 80 ° C. for 1 hour in a constant temperature bath. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko KK) is attached to the semiconductor back contact film side of the semiconductor back contact film integrated with dicing tape after cooling for 20 minutes using a hand roller. I matched it. Next, a test piece (third test piece) having a width of 20 mm and a length of 200 mm was cut out from the dicing tape-integrated semiconductor back-adhesion film with the backing tape. Then, the test piece is subjected to a peeling test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and a fifth between the dicing tape and the semiconductor back contact film. The peeling adhesive strength F ₅ (N / 20 mm) was measured. In this measurement, the temperature condition was 25 ° C., the peeling angle was 180 °, and the tensile speed was 300 mm / min. The results are listed in Tables 1 and 2.

<6th peeling adhesive strength>
The work-attached surface of the semiconductor back-adhesive film in each of the dicing tape-integrated semiconductor back-adhesion films of Examples 1 to 7 and Comparative Examples 1 to 5 is peeled and adhered to the silicon wafer at 25 ° C. after undergoing a predetermined heat treatment. I examined the force. First, in the dicing tape-integrated semiconductor back-adhesive film, the adhesive layer is cured by irradiating the adhesive layer with ultraviolet rays having an integrated irradiation light amount of 300 mJ / cm ² from the base material side of the dicing tape, and then the dicing tape is cured. The semiconductor back contact film was peeled off from the dicing tape of the integrated semiconductor back contact film. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko KK) was attached to the dicing tape side surface (the surface exposed by the peeling) of the peeled semiconductor back contact film. Next, a test piece (third semiconductor back contact film test piece) having a width of 20 mm and a length of 200 mm, which had a laminated structure of a semiconductor back contact film and a backing tape, was cut out from this bonded body. Next, the surface temperature of a silicon wafer (8 inches in diameter, 500 μm in thickness) having a polished surface (mirror-finished surface) finished with a No. 2000 abrasive and placed on a hot plate at 70 ° C. is 70. After confirming that the temperature is ℃, the surface of the test piece on the semiconductor back contact film side is attached to the mirror-finished surface of the silicon wafer, and then the wafer with the test piece is allowed to stand on a hot plate for 1 minute. did. The bonding was performed by a crimping operation in which a 2 kg hand roller was reciprocated twice. Next, the wafer with the test piece was heat-treated at 80 ° C. for 1 hour in a constant temperature bath. Then, after allowing to cool for 20 minutes, the test piece is subjected to a peeling test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the test piece (third). The sixth peeling adhesive force F ₆ (N / 20 mm) between the semiconductor back contact film test piece) and the silicon wafer flat surface was measured. In this measurement, the temperature condition was 25 ° C., the peeling angle was 180 °, and the tensile speed was 300 mm / min. The results are listed in Tables 1 and 2.

<7th peeling adhesive strength>
For each of the dicing tape-integrated semiconductor back-adhesive films of Examples 1 to 7 and Comparative Examples 1 to 5, the peeling adhesive force between the dicing tape and the semiconductor back-adhesive film at 60 ° C. after undergoing a predetermined heat treatment was measured. did. Specifically, a test piece for measuring the third peeling adhesive strength (fourth test piece) was prepared in the same manner as the test piece for measuring the fifth peeling adhesive strength, and the test piece was subjected to a tensile tester (trade name). A peeling test was performed using "Autograph AGS-J" (manufactured by Shimadzu Corporation), and the 7th peeling adhesive force F ₇ (N / 20 mm) between the dicing tape and the semiconductor back contact film was measured. .. In this measurement, the temperature condition was 60 ° C., the peeling angle was 180 °, and the tensile speed was 300 mm / min. The results are listed in Tables 1 and 2.

<8th peeling adhesive strength>
The work-attached surface of the semiconductor back-adhesive film in each of the dicing tape-integrated semiconductor back-adhesion films of Examples 1 to 7 and Comparative Examples 1 to 5 is peeled and adhered to the silicon wafer at 60 ° C. after undergoing a predetermined heat treatment. I examined the force. Specifically, a test piece for measuring the eighth peeling adhesive strength (fourth semiconductor back-adhesion film test piece) was prepared in the same manner as the test piece for measuring the sixth peeling adhesive strength, and the measured temperature in the peeling test. The temperature was changed to 60 ° C. instead of 25 ° C., and the same as described above for the sixth peeling adhesive strength measurement, the semiconductor back contact film test piece was attached to the silicon wafer to the peeling test, and the test piece (No. The eighth peeling adhesive force F ₈ (N / 20 mm) between the semiconductor back contact film test piece (4) and the silicon wafer flat surface was measured. The results are listed in Tables 1 and 2.

<Evaluation of adhesion to wafer at 25 ° C after heat treatment>
The adhesion of the semiconductor back-adhesive film in each of the dicing tape-integrated semiconductor back-adhesion films of Examples 1 to 7 and Comparative Examples 1 to 5 to the silicon wafer at 25 ° C. after undergoing a predetermined heat treatment was examined. First, using a laminator, a dicing tape integrated semiconductor back surface is adhered to the mirror-finished surface of a silicon wafer (8 inches in diameter and 500 μm in thickness) having a polished surface (mirror-finished surface) finished with a No. 2000 abrasive. The films were pasted together. In this bonding, the temperature is 70 ° C., the bonding speed is 1 m / min, and the pressure is 0.15 MPa. Next, in a constant temperature bath, a silicon wafer with a semiconductor back contact film integrated with a dicing tape was heat-treated at 80 ° C. for 1 hour. Then, the silicon wafer with the semiconductor back contact film integrated with the dicing tape was allowed to cool for 20 minutes in a room temperature environment. Next, a silicon wafer with a dicing tape-integrated semiconductor back-adhesive film is placed on a hot plate at 25 ° C. so that the wafer is in contact with the hot plate surface, and 30 seconds later, the dicing tape in the dicing tape-integrated semiconductor back-adhesion film is placed. Was slowly pulled by hand to peel it off from the wafer. In this peeling operation, the peeling angle of the dicing tape is set to be within the range of 100 ° to 180 °, and the tensile speed is about 1 to 300 mm / min. Regarding the adhesion of the semiconductor back-adhesive film to the wafer at 25 ° C after heat treatment, when the peeling occurs at the interface between the dicing tape and the semiconductor back-adhesive film, it is evaluated as "good", and the semiconductor is evaluated by the peeling work. The case where peeling occurred at the interface between the back contact film and the silicon wafer was evaluated as "defective". The evaluation results are listed in Tables 1 and 2.

<Evaluation of wafer peelability at 60 ° C after heat treatment>
The peelability of the semiconductor back-adhesive film in each of the dicing tape-integrated semiconductor back-adhesion films of Examples 1 to 7 and Comparative Examples 1 to 5 from the silicon wafer at 60 ° C. after undergoing a predetermined heat treatment was examined. Specifically, the dicing tape-integrated semiconductor on the silicon wafer is the same as described above for the evaluation of the adhesion of the wafer to the wafer at 25 ° C, except that the temperature of the hot plate is set to 60 ° C instead of 25 ° C. The back-adhesive film was attached and peeled off. Regarding the peelability of the semiconductor back-adhesive film to wafer at 60 ° C after heat treatment, the case where the peeling occurs at the interface between the dicing tape and the semiconductor back-adhesive film is evaluated as "good", and the semiconductor is evaluated by the peeling work. The case where peeling occurred at the interface between the back contact film and the silicon wafer was evaluated as "defective". The evaluation results are listed in Tables 1 and 2.

X composite film (dicing tape integrated semiconductor back contact film)
10,10'film (semiconductor back contact film)
11 Laser mark layer 12 Adhesive layer 20 Dicing tape 21 Base material 22 Adhesive layer W, 30 Wafer 31 Chip

Claims (9)

A dicing tape having a laminated structure including a base material and an adhesive layer,
A semiconductor back-adhesive film that is releasably adhered to the adhesive layer of the dicing tape is provided.
From the first peeling adhesive force measured in the peeling test between the dicing tape and the semiconductor back contact film in the first test piece under the conditions of 25 ° C., peeling angle 180 ° and tensile speed 300 mm / min, silicon In a peeling test between the first semiconductor back contact film test piece bonded to the wafer flat surface at 70 ° C. and the silicon wafer flat surface under the conditions of 25 ° C., a peeling angle of 180 °, and a tensile speed of 300 mm / min. The second peeling adhesive strength to be measured is large,
From the third peeling adhesive force measured in the peeling test under the conditions of 60 ° C., peeling angle 180 ° and tensile speed 300 mm / min between the dicing tape and the semiconductor back contact film in the second test piece, silicon In a peeling test between the second semiconductor back-adhesion film test piece bonded to the wafer flat surface at 70 ° C. and the silicon wafer flat surface under the conditions of 60 ° C., peeling angle 180 ° and tensile speed 300 mm / min. The fourth peeling adhesive strength to be measured is a small, dicing tape-integrated semiconductor back-adhesion film. The dicing tape-integrated semiconductor back-adhesive film according to claim 1, wherein the first peeling adhesive force is 0.2 to 3 N / 20 mm. The dicing tape-integrated semiconductor back-adhesive film according to claim 1 or 2, wherein the second peeling adhesive force is 3N / 20 mm or more. The dicing tape-integrated semiconductor back-adhesive film according to any one of claims 1 to 3, wherein the third peeling adhesive force is 0.2 to 3 N / 20 mm. The dicing tape-integrated semiconductor back-adhesive film according to any one of claims 1 to 4, wherein the fourth peeling adhesive force is 0.2 N / 20 mm or less. Measured by a peeling test between the dicing tape and the semiconductor back-adhesive film on the third test piece that has been heat-treated at 80 ° C. for 1 hour under the conditions of 25 ° C., a peeling angle of 180 °, and a tensile speed of 300 mm / min. Due to the fifth peeling adhesive force, the third semiconductor back contact film test piece and the silicon wafer flat surface were bonded to the silicon wafer flat surface at 70 ° C. and then heat-treated at 80 ° C. for 1 hour. The dicing tape according to any one of claims 1 to 5, wherein the sixth peeling adhesive strength measured in the peeling test under the conditions of 25 ° C., peeling angle 180 ° and tensile speed 300 mm / min is large. Body type semiconductor back contact film. The semiconductor back-adhesive film integrated with a dicing tape according to claim 6, wherein the sixth peeling adhesive force is 3N / 20 mm or more. Measured by a peeling test between the dicing tape and the semiconductor back-adhesive film on the fourth test piece that has been heat-treated at 80 ° C. for 1 hour under the conditions of 60 ° C., a peeling angle of 180 °, and a tensile speed of 300 mm / min. Due to the seventh peeling adhesive force, the fourth semiconductor back-adhesion film test piece and the silicon wafer flat surface were bonded to the silicon wafer flat surface at 70 ° C. and then heat-treated at 80 ° C. for 1 hour. The dicing tape according to any one of claims 1 to 7, wherein the eighth peeling adhesive strength measured in the peeling test under the conditions of 60 ° C., peeling angle 180 ° and tensile speed 300 mm / min is large. Body type semiconductor back contact film. The semiconductor back-adhesive film integrated with a dicing tape according to claim 8, wherein the eighth peeling adhesive force is 3N / 20 mm or more.

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