TW201834865A - Resin sheet - Google Patents

Resin sheet Download PDF

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Publication number
TW201834865A
TW201834865A TW106144360A TW106144360A TW201834865A TW 201834865 A TW201834865 A TW 201834865A TW 106144360 A TW106144360 A TW 106144360A TW 106144360 A TW106144360 A TW 106144360A TW 201834865 A TW201834865 A TW 201834865A
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Taiwan
Prior art keywords
resin
weight
outermost layer
resin sheet
wafer
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TW106144360A
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Chinese (zh)
Inventor
土生剛志
清水祐作
飯野智絵
砂原肇
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日商日東電工股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/38Layered products comprising a layer of synthetic resin comprising epoxy resins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04Homopolymers or copolymers of esters
    • C08L33/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/062Copolymers with monomers not covered by C08L33/06
    • C08L33/068Copolymers with monomers not covered by C08L33/06 containing glycidyl groups
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/10Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/26Polymeric coating
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2333/00Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
    • C08J2333/04Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
    • C08J2333/06Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2433/00Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
    • C08J2433/04Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
    • C08J2433/06Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2461/00Characterised by the use of condensation polymers of aldehydes or ketones; Derivatives of such polymers
    • C08J2461/04Condensation polymers of aldehydes or ketones with phenols only
    • C08J2461/06Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/014Additives containing two or more different additives of the same subgroup in C08K
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00Applications
    • C08L2203/20Applications use in electrical or conductive gadgets
    • C08L2203/206Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend

Abstract

Provided is a resin sheet which can suppress a variation in the amount of a resin entering into a hollow part between an electronic device and an adherend for every package. The resin sheet includes an outermost layer and an innermost layer. The outermost layer contains an inorganic filler and a thermoplastic resin. A content of the inorganic filler is 85% by weight or more with respect to the whole of the outermost layer. A content of the thermoplastic resin is 15% by weight or less with respect to all of resin components of the outermost layer. The innermost layer contains a functional group-containing thermoplastic resin having a weight-average molecular weight of 800,000 or more. A content of the functional group-containing thermoplastic resin is 90% by weight or more with respect to all of resin components of the innermost layer.

Description

樹脂薄片Resin sheet

[0001] 本發明係關於一種樹脂薄片。[0001] The present invention relates to a resin sheet.

[0002] 以往,在對電子裝置與基板之間為中空結構的中空型電子裝置進行樹脂密封來製作中空型電子裝置封裝體時,作為密封樹脂,有使用薄片狀密封樹脂的情況(例如參照專利文獻1)。   [0003] 作為上述封裝體的製造方法,可列舉:在配置於黏著物上的一個或多個電子裝置上配置薄片狀的密封樹脂,接著,朝著使電子裝置與薄片狀的密封樹脂靠近的方向進行加壓,將電子裝置埋入薄片狀的密封樹脂,之後,使薄片狀的密封樹脂熱硬化的方法。   [0004] 在採用上述方法的情況下,密封樹脂的一部分進入到電子裝置與黏著物之間的中空部。然而,存在在每個封裝體中該進入量的偏差大的問題。   [0005] 在專利文獻2中公開了A層與B層的2層構成的密封用環氧樹脂組成物薄片。在專利文獻2中記載了使A層朝下、B層朝上來覆蓋的方式置於中空型裝置上並進行密封。 [先前技術文獻] [專利文獻]   [0006]   [專利文獻1] 日本特開2006-19714號公報   [專利文獻2] 日本特開2011-219726號公報[0002] Conventionally, when a hollow electronic device having a hollow structure between an electronic device and a substrate is resin-sealed to produce a hollow electronic device package, a sheet-shaped sealing resin is sometimes used as the sealing resin (for example, refer to a patent) Literature 1). [0003] As a method for manufacturing the package, a sheet-shaped sealing resin is disposed on one or more electronic devices disposed on an adhesive, and then the electronic device is brought closer to the sheet-shaped sealing resin. A method in which an electronic device is pressed into a sheet-like sealing resin, and then the sheet-like sealing resin is thermally cured. [0004] In the case where the above method is adopted, a part of the sealing resin enters the hollow portion between the electronic device and the adhesive. However, there is a problem that the deviation of the entering amount is large in each package. [0005] Patent Document 2 discloses a sealing epoxy resin composition sheet composed of two layers of A layer and B layer. Patent Document 2 describes that a layer A is faced down and a layer B is faced up to be placed on a hollow type device and sealed. [Prior Art Literature] [Patent Literature] [0006] [Patent Literature 1] Japanese Patent Laid-Open No. 2006-19714 [Patent Literature 2] Japanese Patent Laid-Open No. 2011-219726

[發明所欲解決之課題]   [0007] 然而,專利文獻2的A層使用半硬化狀態的環氧樹脂,在硬化前較低分子的環氧樹脂在硬化反應中流動,因此無法確保穩定的中空密封性。   [0008] 本發明係鑒於上述課題而完成的發明,其目的在於提供可抑制進入電子裝置與黏著物之間的中空部的樹脂的量在每個封裝體中發生偏差的樹脂薄片。 [用以解決課題之手段]   [0009] 為了達成以上所述的目的,本發明人首先對進入中空部的樹脂的量在每個封裝中發生偏差的理由進行了深入研究。其結果查明:在採用上述方法的情況下,將電子裝置埋入密封樹脂後,在熱硬化時,首先,密封樹脂的一部分因熱而變成低黏度等並流動而進入到中空部,之後,隨著熱硬化,樹脂變成高黏度,樹脂的進入停止。而且查明:熱硬化時的樹脂的流動量在每個封裝體中大不相同,難以進行控制。   [0010] 本申請發明人等發現經由採用下述的構成而可解決上述的問題,以至完成本發明。   [0011] 即,本發明的樹脂薄片,其特徵為具有最外層宇最內層,   前述最外層包含無機填充劑與熱可塑性樹脂,   前述無機填充劑的含量相對於前述最外層全體為85重量%以上,   前述熱可塑性樹脂的含量相對於前述最外層的樹脂成分全體為15重量%以下,   前述最內層包含重量平均分子量為80萬以上的含官能基的熱可塑性樹脂,   前述含官能基的熱可塑性樹脂的含量相對於前述最內層的樹脂成分全體為90重量%以上。   [0012] 前述樹脂薄片在前述最內層以與電子裝置上接觸的方式而層合於電子裝置上後,埋入前述電子裝置來使用。   根據前述構成,前述最內層以相對於前述最內層的樹脂成分全體為90重量%以上的比例含有含官能基的熱可塑性樹脂。由於熱可塑性樹脂成分較多,因此在電子裝置的埋入時,可使樹脂進入到電子裝置與黏著物之間的中空部。   另外,前述含官能基的熱可塑性樹脂具有官能基,因此在從埋入電子裝置後到熱硬化結束為止的期間發生交聯。另外,前述含官能基的熱可塑性樹脂的重量平均分子量為80萬以上,因此即使加熱也不易流動。因此,可減少電子裝置與黏著物之間的中空部的樹脂的進入量(移動量)。   在此,就最內層而言,為了實現穩定的中空密封性,而以相對於前述最內層的樹脂成分全體為90重量%以上的比例含有含官能基的丙烯酸系樹脂,因此硬化後的彈性係數低。因此,在切割時一旦黏貼於切割膠帶,則在切割後變得不易從切割膠帶剝離。另外,丙烯酸系樹脂因其黏彈性而在成型時容易追隨於晶片,但是不會流動,因此在晶片與晶片之間的凹陷變大,作為將晶片單片化時的形狀,會變成端部凹陷的形狀。   因此,在本發明中,設置有最外層。最外層以相對於前述最外層全體為85重量%以上的比例包含無機填充劑。此外,最外層中,使熱可塑性樹脂的含量相對於最外層的樹脂成分全體為15重量%以下,並且包含較多流動性高的環氧樹脂成分。其結果是,硬化後的彈性係數變高、與切割膠帶的剝離性變得良好。另外,最外層在直至硬化之前流動性均較高,因此樹脂發生流動。其結果是,可抑制頂面的凹陷,即晶片與晶片之間的凹陷。   [0013] 在前述構成中,前述含官能基的熱可塑性樹脂較佳為含縮水甘油基的丙烯酸系樹脂。   [0014] 若前述含官能基的熱可塑性樹脂為含縮水甘油基的丙烯酸系樹脂,則可以進一步減少從埋入電子裝置後到熱硬化結束為止的期間的樹脂向晶片下的流動。   [0015] 在前述構成中,前述最內層包含作為硬化性成分的酚樹脂,   前述酚樹脂(phenol resin)的含量相對於前述含官能基的熱可塑性樹脂的當量比較佳為0.8~2.0的範圍內。   [0016] 若前述最內層中所包含的前述酚樹脂的含量相對於上述含官能基的熱可塑性樹脂的當量比為0.8~2.0的範圍內,則適合與前述含官能基的熱可塑性樹脂的官能基反應。其結果是,可進一步減少從埋入電子裝置後到熱硬化結束為止的期間的樹脂向晶片下的流動。   [0017] 在前述構成中,對樹脂薄片全體的硬化前的玻璃轉移溫度Tg進行測定時,較佳在0℃以下存在至少1個玻璃轉移溫度Tg。   [0018] 若在0℃以下存在至少1個玻璃轉移溫度Tg,則可說含有丙烯酸系樹脂。如果含有丙烯酸系樹脂,則在電子裝置的埋入時可更適宜地使樹脂進入電子裝置與黏著物之間的中空部。   [0019] 在前述構成中,前述最內層較佳不包含無機填充劑、或包含相對於前述最內層全體為50重量%以下的無機填充劑。   [0020] 若前述最內層的無機填充劑的含量相對於前述最內層全體為50重量%以下,則對晶片的追隨性良好,可確保穩定的中空密封性。若為50重量%以上,則即使升高成型溫度或壓力,亦不會追隨晶片,晶片與晶片之間的樹脂的進入不足,存在如下風險:在切割時發生封裝體的側面變空之類的不良。[Problems to be Solved by the Invention] 000 [0007] However, the layer A of Patent Document 2 uses an epoxy resin in a semi-hardened state, and the epoxy resin with a low molecular weight flows in the curing reaction before curing, so stable hollow cannot be ensured Tightness. [0008] The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a resin sheet that can suppress variations in the amount of resin entering a hollow portion between an electronic device and an adherend in each package. [Means to Solve the Problem] [0009] In order to achieve the above-mentioned object, the present inventors first conducted in-depth research on the reason why the amount of resin entering the hollow portion varies in each package. As a result, it was found that, in the case where the above-mentioned method is adopted, after the electronic device is embedded in the sealing resin, at the time of thermal curing, a part of the sealing resin becomes low viscosity due to heat and flows into the hollow portion. After that, As the heat hardens, the resin becomes highly viscous and the entry of the resin stops. In addition, it was found that the amount of resin flow during heat curing varies greatly from package to package, making it difficult to control. [0010] The inventors of the present application have found that the above-mentioned problems can be solved by employing the following configuration, and the present invention has been completed. [0011] That is, the resin sheet of the present invention is characterized by having an outermost layer and an innermost layer. The outermost layer contains an inorganic filler and a thermoplastic resin. The content of the inorganic filler is 85% by weight relative to the entire outermost layer. In the above, the content of the thermoplastic resin is 15% by weight or less based on the entire resin component of the outermost layer, the innermost layer contains a functional group-containing thermoplastic resin having a weight average molecular weight of 800,000 or more, the functional group-containing heat The content of the plastic resin is 90% by weight or more based on the entire resin component of the innermost layer. [0012] The resin sheet is laminated on the electronic device so that the innermost layer is in contact with the electronic device, and then the electronic device is embedded and used. According to the aforementioned configuration, the innermost layer contains a thermoplastic resin containing a functional group in a proportion of 90% by weight or more with respect to the entire resin component of the innermost layer. Since there are many thermoplastic resin components, when the electronic device is embedded, the resin can be allowed to enter the hollow portion between the electronic device and the adhesive. In addition, since the above-mentioned functional group-containing thermoplastic resin has a functional group, cross-linking occurs from the time when the electronic device is embedded to the end of the thermal curing. In addition, since the weight-average molecular weight of the functional group-containing thermoplastic resin is 800,000 or more, it does not easily flow even when heated. Therefore, it is possible to reduce the amount of resin entering (moving amount) in the hollow portion between the electronic device and the adherend. Here, the innermost layer contains a functional group-containing acrylic resin in an amount of 90% by weight or more relative to the entire resin component of the innermost layer in order to achieve stable hollow sealing properties. Low coefficient of elasticity. Therefore, once it is stuck to the dicing tape during cutting, it becomes difficult to peel off from the dicing tape after cutting. In addition, acrylic resin is easy to follow the wafer during molding due to its viscoelasticity, but it does not flow. Therefore, the depression between the wafer and the wafer becomes larger, and the shape when the wafer is singulated becomes an end depression. shape. Therefore, in the present invention, the outermost layer is provided. The outermost layer contains an inorganic filler in a proportion of 85% by weight or more based on the entire outermost layer. In addition, in the outermost layer, the content of the thermoplastic resin is 15% by weight or less based on the entire resin component of the outermost layer, and a large amount of a highly fluid epoxy resin component is included. As a result, the coefficient of elasticity after hardening becomes high, and the peelability from a dicing tape becomes favorable. In addition, since the outermost layer has high fluidity until it is hardened, the resin flows. As a result, the depression of the top surface, that is, the depression between the wafer and the wafer can be suppressed. [0013] In the above configuration, the functional group-containing thermoplastic resin is preferably a glycidyl group-containing acrylic resin. [0014] If the functional group-containing thermoplastic resin is a glycidyl group-containing acrylic resin, the flow of the resin under the wafer from the time when the electronic device is embedded to the end of the thermal curing can be further reduced. [0015] In the aforementioned configuration, the innermost layer contains a phenol resin as a hardening component, and the content of the phenol resin is preferably in a range of 0.8 to 2.0 relative to the equivalent of the functional group-containing thermoplastic resin. Inside. [0016] If the content ratio of the phenol resin contained in the innermost layer to the functional group-containing thermoplastic resin is within a range of 0.8 to 2.0, it is suitable for the functional resin-containing thermoplastic resin. Functional group reaction. As a result, it is possible to further reduce the flow of the resin under the wafer during the period from the embedment of the electronic device to the end of the thermal curing. [0017] In the above configuration, when measuring the glass transition temperature Tg before the entire resin sheet is cured, it is preferable to have at least one glass transition temperature Tg below 0 ° C. [0018] If at least one glass transition temperature Tg exists below 0 ° C, it can be said that an acrylic resin is contained. If an acrylic resin is contained, the resin can be more appropriately inserted into the hollow portion between the electronic device and the adhesive when the electronic device is embedded. [0019] In the aforementioned configuration, the innermost layer preferably does not include an inorganic filler or an inorganic filler in an amount of 50% by weight or less based on the entirety of the innermost layer. [0020] When the content of the inorganic filler in the innermost layer is 50% by weight or less with respect to the entire innermost layer, the followability to the wafer is good, and stable hollow sealing properties can be ensured. If it is 50% by weight or more, even if the molding temperature or pressure is increased, the wafer will not be followed, and the resin between the wafer and the wafer will not enter sufficiently. There is a risk that the side of the package will become empty during dicing. bad.

[用以實施本發明之最佳形態]   [0022] 以下,參照附圖對本發明的實施方式進行說明。但是,本發明並不僅限定於這些實施方式。   [0023] (樹脂薄片)   圖1係本實施方式的電子裝置密封用樹脂薄片(樹脂薄片)的剖面示意圖。如圖1所示,電子裝置密封用樹脂薄片11(以下也稱為「樹脂薄片11」)代表性地以層合於聚對苯二甲酸乙二醇酯(PET)膜等的間隔件10上的狀態來提供。尚,為了容易進行樹脂薄片11的剝離,亦可對間隔件10實施脫模處理。   [0024] 尚,在本實施方式中,對僅在樹脂薄片的一面層合有間隔件的情況進行說明,但是,本發明並不限定於該例,亦可以在樹脂薄片的雙面層合間隔件。這種情況下,可在即將使用前剝離一面的間隔件進行使用。另外,在本發明中,樹脂薄片可以未層合於間隔件而以樹脂薄片的單體進行提供。另外,亦可以在不違背本發明意圖的範圍內,在樹脂薄片上層合其他層。   [0025] 樹脂薄片11具有最外層11a、與層合在最外層11a上的最內層11b。   [0026] 尚,在本實施方式中,對樹脂薄片為最外層與最內層的2層構成的情況進行了說明,但是,本發明並不限定於該例。本發明的樹脂薄片只要在一面露出最外層,並且在另一面露出最內層即可,亦可在最外層與最內層之間存在其他層。   [0027] (最外層)   最外層11a包含無機填充劑與熱可塑性樹脂。   前述無機填充劑的含量相對於最外層11a全體為85重量%以上,較佳為87重量%以上,更佳為89重量%以上。另外,前述無機填充劑的含量越多越較佳,但是,從薄片成形性的觀點出發,例如為93重量%以下、90重量%以下。   前述熱可塑性樹脂的含量相對於最外層11a的樹脂成分全體為15重量%以下,較佳為12重量%以下,更佳為8重量%以下。   [0028] 最外層11a以相對於最外層11a全體為85重量%以上的比例包含無機填充劑。因此,由於在硬化後具有一定程度的硬度,因此電子裝置從切割膠帶的剝離性變得良好。   另外,最外層11a可抑制埋入時的頂面的凹凸。這是由於:最外層的熱可塑性樹脂的含量相對於樹脂成分全體為15重量%以下,因此在環氧樹脂和酚成分的低分子量成分的影響下,使頂面形狀平滑而可充分地流動。   [0029] 作為前述熱可塑性樹脂,可列舉:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱可塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET或PBT等的飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂、苯乙烯-異丁烯-苯乙烯嵌段共聚物等。此等熱可塑性樹脂可單獨使用,亦可併用2種以上。其中,從容易得到撓性、與環氧樹脂的分散性良好的觀點出發,較佳丙烯酸系樹脂。   [0030] 作為前述丙烯酸系樹脂,並無特別限定,可列舉以具有碳數30以下、尤其是碳數4~18的直鏈或支鏈的烷基的丙烯酸或者甲基丙烯酸的酯中的1種或2種以上為成分的聚合物(丙烯酸系共聚物)等。作為前述烷基,可列舉例如甲基、乙基、丙基、異丙基、正丁基、叔丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或二十烷基等。   [0031] 在前述丙烯酸系樹脂中,較佳重量平均分子量為5萬以上的樹脂,更佳重量平均分子量為10萬~200萬的樹脂,進一步較佳重量平均分子量為30萬~160萬的樹脂。若為上述數值範圍內,則可以進一步提高最外層11a的黏度與撓性。重量平均分子量是利用GPC(凝膠滲透色譜)測定、並經由聚苯乙烯換算而計算得到的值。   更具體而言,在本說明書中,重量平均分子量是利用GPC(凝膠滲透色譜)進行測定、並經由聚苯乙烯換算而計算得到的值。重量平均分子量(Mw)採用的是使用東曹製GPC:HLC-8120GPC在以下測定條件下測定得到的值。 (測定條件)   色譜柱:相當於GMHXL ×3個   流量:1.0ml/分鐘   檢測器:RI檢測器   試樣濃度:0.1重量%THF溶液   注入量:150μl   [0032] 另外,作為形成前述聚合物的其他單體,並無特別限定,可列舉例如:丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸或者巴豆酸等各種含羧基的單體;馬來酸酐或者衣康酸酐等各種酸酐單體;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或者(4-羥基甲基環己基)-甲基丙烯酸酯等各種含羥基的單體;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或者(甲基)丙烯醯氧基萘磺酸等各種含磺酸基的單體;或2-羥基乙基丙烯醯基磷酸酯等各種含磷酸基的單體。其中,從與環氧樹脂反應而可以提高最外層11a的黏度或彈性係數的觀點出發,較佳含有含羧基的單體、含縮水甘油基(環氧基)的單體、含羥基的單體中的至少一種。   [0033] 前述無機填充劑並無特別限定,可使用以往公知的各種填充劑,可列舉例如石英玻璃、滑石、二氧化矽(熔融二氧化矽或結晶性二氧化矽等)、氧化鋁、氮化鋁、氮化矽、氮化硼的粉末。此等可單獨使用,亦可併用2種以上。其中,基於可以良好地降低線膨脹係數的理由,較佳二氧化矽、氧化鋁,更較佳二氧化矽。   [0034] 作為二氧化矽,較佳二氧化矽粉末,更較佳熔融二氧化矽粉末。作為熔融二氧化矽粉末,可列舉球狀熔融二氧化矽粉末、破碎熔融二氧化矽粉末,但是,從流動性的觀點出發,較佳球狀熔融二氧化矽粉末。   [0035] 前述無機填充劑的平均粒徑較佳使用20μm以下範圍的平均粒徑,更佳使用0.1~15μm範圍的平均粒徑,特別較佳使用0.5~10μm範圍的平均粒徑。   另外,作為前述無機填充劑,亦可使用平均粒徑不同的兩種以上的無機填充劑。在使用平均粒徑不同的兩種以上的無機填充劑的情況下,上述的「無機填充劑的平均粒徑為20μm以下」係指無機填充劑整體的平均粒徑為20μm以下。   [0036] 前述無機填充劑的形狀並無特別限定,可為球狀(包括橢球體狀。)、多面體狀、多棱柱狀、扁平形狀、不定形狀等任意形狀,但是,較佳球狀。   [0037] 最外層11a中含有的前述無機填充劑,較佳為:在利用鐳射繞射散射法測定的粒度分佈中具有兩個峰。這般的無機填充劑例如可經由混合平均粒徑不同的兩種無機填充劑而得到。若使用粒度分佈中具有兩個峰的無機填充劑,則可高密度地填充無機填充劑。其結果是可進一步增多無機填充劑的含量。   前述兩個峰並無特別限定,但較佳粒徑大的一側的峰處於3~30μm的範圍內、粒徑小的一側的峰處於0.1~1μm的範圍內。若上述2個峰處於前述數值範圍內,則可進一步增加無機填充劑的含量。   具體而言,上述粒度分佈可經由以下的方法得到。   (a)將最外層11a放入坩堝中,在大氣氣氛下以700℃強熱2小時,使其灰化。   (b)使得到的灰分分散至純水中,進行10分鐘超音波處理,利用鐳射繞射散射式粒度分佈測量裝置(貝克曼庫爾特公司製、「LS 13 320」;濕式法)求出粒度分佈(體積基準)。   尚,作為最外層11a的組成,除了無機填充劑之外為有機成分,經由上述的強熱處理實際上會使全部的有機成分燒失,因此將得到的灰分視為無機填充劑進行測定。尚,平均粒徑的計算亦可以與粒度分佈同時進行。   [0038] 在最外層11a中,較佳用矽烷偶合劑預先對前述無機填充劑進行表面處理。   [0039] 作為前述矽烷偶合劑,只要是具有甲基丙烯醯氧基或丙烯醯氧基、且可進行無機填充劑表面處理的物質,則並無特別限定。作為前述矽烷偶合劑的具體例子,可列舉:3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、甲基丙烯醯氧基辛基三甲氧基矽烷、甲基丙烯醯氧基辛基三乙氧基矽烷。其中,從反應性與成本的觀點出發,較佳3-甲基丙烯醯氧基丙基三甲氧基矽烷。   [0040] 在最外層11a含有預先被作為矽烷偶合劑的具有甲基丙烯醯氧基或丙烯醯氧基的化合物進行了表面處理的無機填充劑的情況下,相對於無機填充劑100重量份,較佳預先利用0.5~2重量份的矽烷偶合劑對前述無機填充劑進行表面處理。   若利用矽烷偶合劑進行無機填充劑的表面處理,則可以抑制最外層11a的黏度過於變大。   [0041] 在最外層11a含有預先被作為矽烷偶合劑的具有甲基丙烯醯氧基或丙烯醯氧基的化合物進行了表面處理的無機填充劑、並且使用混合有平均粒徑不同的兩種無機填充劑的混合物作為前述無機填充劑的情況下,較佳至少預先用矽烷偶合劑對平均粒徑較小的無機填充劑進行表面處理。平均粒徑較小的無機填充劑的比表面積更大,因此可以進一步抑制黏度的上升。另外,在使用混合有平均粒徑不同的兩種無機填充劑的混合物作為前述無機填充劑的情況下,更佳預先用矽烷偶合劑對平均粒徑較小的無機填充劑與較大的無機填充劑兩者進行表面處理。此時,可以進一步抑制黏度的上升。   [0042] 最外層11a較佳包含環氧樹脂及酚樹脂。由此,得到良好的熱硬化性。   [0043] 作為環氧樹脂,並無特別限定。例如可以使用:三苯基甲烷型環氧樹脂、甲酚酚醛型環氧樹脂、聯苯型環氧樹脂、改性雙酚A型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、改性雙酚F型環氧樹脂、雙環戊二烯型環氧樹脂、苯酚酚醛型環氧樹脂、苯氧基樹脂等各種環氧樹脂。此等環氧樹脂可單獨使用,亦可併用2種以上。   [0044] 從確保環氧樹脂的硬化後的韌性及環氧樹脂的反應性的觀點出發,較佳環氧當量為150~250、軟化點或熔點為50~130℃的常溫下為固態的環氧樹脂,其中,從成型性及可靠性的觀點出發,更佳雙酚F型環氧樹脂、雙酚A型環氧樹脂、聯苯型環氧樹脂等。   [0045] 酚樹脂只要是與環氧樹脂之間發生硬化反應的酚樹脂則並無特別限定。例如可以使用苯酚酚醛樹脂、苯酚芳烷基樹脂、聯苯芳烷基樹脂、雙環戊二烯型酚樹脂、甲酚酚醛樹脂、甲階酚醛樹脂等。此等酚樹脂可單獨使用,亦可併用2種以上。   [0046] 作為酚樹脂,從與環氧樹脂的反應性的觀點出發,較佳使用羥基當量為70~250、軟化點為50~110℃的樹脂,其中,從硬化反應性高且廉價的觀點出發,可適宜使用苯酚酚醛樹脂。另外,從可靠性的觀點出發,亦可適宜使用苯酚芳烷基樹脂、聯苯芳烷基樹脂之類的低吸濕性的酚樹脂。   [0047] 環氧樹脂與酚樹脂的摻合比例,從硬化反應性的觀點出發,較佳以相對於環氧樹脂中的環氧基1當量而使酚樹脂中的羥基的合計達到0.7~1.5當量的方式進行摻合,更佳為0.9~1.2當量。   [0048] 最外層11a中的環氧樹脂及酚樹脂的合計含量的下限較佳為2重量%以上,更佳為3重量%以上。若為2重量%以上,則良好地得到對電子裝置、基板等的黏接力。另一方面,上述合計含量的上限較佳為25重量%以下,更佳為20重量%以下。若為25重量%以下,則可以降低樹脂薄片的的吸濕性。   [0049] 最外層11a較佳包含硬化促進劑。   [0050] 作為硬化促進劑,只要是使環氧樹脂和酚樹脂的硬化進行的物質,則並無特別限定。可列舉例如2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-均三嗪等。   [0051] 硬化促進劑的含量相對於環氧樹脂及酚樹脂的合計100重量份較佳為0.1~5重量份。   [0052] 最外層11a亦可根據需要而包含阻燃劑成分。由此,可以減低因部件短路或發熱等而起火時的燃燒擴大。作為阻燃劑組成成分,可使用例如:氫氧化鋁、氫氧化鎂、氫氧化鐵、氫氧化鈣、氫氧化錫、複合化金屬氫氧化物等各種金屬氫氧化物;磷腈系阻燃劑等。   [0053] 最外層11a較佳包含顏料。作為顏料,並無特別限定,可列舉碳黑等。   [0054] 最外層11a中的顏料的含量較佳為0.1~2重量%。若為0.1重量%以上,則得到良好的標記性。若為2重量%以下,則可以確保硬化後的樹脂薄片的強度。   [0055] 尚,在最外層11a形成用樹脂組成物中,除了上述各成分以外,可根據需要適當地摻合其他添加劑。   [0056] 最外層11a的厚度並無特別限定,例如為100~200μm。若為上述範圍內,則相對於100~250μm的晶片厚度而可以平滑性良好地成型為頂面形狀。   [0057] (最內層)   最內層11b包含含官能基的熱可塑性樹脂。   前述含官能基的熱可塑性樹脂的含量相對於最內層11b的樹脂成分全體為90重量%以上,較佳為93重量%以上,更佳為95重量%以上。   前述含官能基的熱可塑性樹脂的重量平均分子量為80萬以上,較佳為100萬以上,更佳為120萬以上。   尚,重量平均分子量為利用GPC(凝膠滲透色譜)進行測定並經由聚苯乙烯換算而計算得到的值。詳細的測定方法如上述所示。   [0058] 樹脂薄片11在最內層11b以與電子裝置上接觸的方式而層合於電子裝置上後,埋入前述電子裝置來使用。   最內層11b以相對於最內層11b的樹脂成分全體為90重量%以上的比例包含含官能基的熱可塑性樹脂。由於熱可塑性樹脂成分較多,因此在電子裝置的埋入時,可以使樹脂進入到電子裝置與黏著物之間的中空部。   另外,前述含官能基的熱可塑性樹脂具有官能基,因此在從埋入電子裝置後到熱硬化結束為止的期間發生交聯。另外,前述含官能基的熱可塑性樹脂的重量平均分子量為80萬以上,因此即使加熱也不易流動。因此,可減少電子裝置與黏著物之間的中空部的樹脂的進入量(移動量)。   [0059] 作為前述含官能基的熱可塑性樹脂,可列舉含官能基的丙烯酸系樹脂等。   [0060] 作為前述含官能基的丙烯酸系樹脂,可列舉具有縮水甘油基、胺基中的任一個或多個基作為官能基的丙烯酸系樹脂。作為前述含官能基的丙烯酸系樹脂的具體例,可列舉在最外層11a一項中所說明的丙烯酸系樹脂中具有上述官能基的丙烯酸系樹脂。其中,較佳含縮水甘油基的丙烯酸系樹脂。若為含縮水甘油基的丙烯酸系樹脂,則可以進一步減少從埋入電子裝置後到熱硬化結束為止的期間的樹脂的移動量。   [0061] 最內層11b較佳包含作為硬化性成分的酚樹脂。   前述酚樹脂的含量相對於前述含官能基的熱可塑性樹脂的當量比較佳為0.8~2.0的範圍內,更佳為0.9~1.5的範圍內,進一步較佳為1.0~1.2的範圍內。   若最內層11b中所含的前述酚樹脂的含量相對於前述含官能基的熱可塑性樹脂的當量比為0.8~2.0的範圍內,則適宜與前述含官能基的熱可塑性樹脂的官能基反應。其結果是,可以進一步減少從埋入電子裝置後到熱硬化結束為止的期間的樹脂的移動量。   [0062] 作為前述酚樹脂,可列舉在最外層11a一項中所說明的酚樹脂。   [0063] 最內層11b較佳不包含環氧樹脂。   [0064] 最內層11b較佳不含有無機填充劑、或者即使含有亦是在相對於最內層11b為50重量%以下的範圍內含有無機填充劑。作為上述無機填充劑,可列舉在最外層11a一項中所說明的無機填充劑。   [0065] 最內層11b較佳包含硬化促進劑。作為前述硬化促進劑,可列舉在最外層11a一項中所說明的硬化促進劑。   [0066] 最內層11b較佳包含顏料。作為前述顏料,可列舉在最外層11a一項中所說明的顏料。   [0067] 尚,在最內層11b形成用的樹脂組成物中,除了上述各成分以外,可根據需要適當地摻合其他添加劑。   [0068] 最內層11b的厚度並無特別限定,例如為50~100μm。若為上述範圍內,則可藉由最內層阻止最外層的流動。   [0069] 樹脂薄片11全體的厚度並無特別限定,例如為150μm~1000μm。若為上述範圍內,則可以穩定地成型晶片厚度100~700μm的樹脂薄片。   [0070] 就樹脂薄片11而言,在對樹脂薄片11全體的硬化前的玻璃轉移溫度Tg進行測定時,較佳在0℃以下存在至少1個玻璃轉移溫度Tg。若在0℃以下存在至少1個玻璃轉移溫度Tg,則可以說含有丙烯酸系樹脂。如果含有丙烯酸系樹脂,則在電子裝置的埋入時,可以更適宜使樹脂進入電子裝置與黏著物之間的中空部。玻璃轉移溫度Tg的測定方法依據實施例記載的方法。   [0071] [樹脂薄片的製造方法]   樹脂薄片11藉由分別製作最外層11a與最內層11b、並將此等貼合而得到。   [0072] <最外層之製作方法>   最外層11a可經由如下方式來形成:將用於形成最外層11a的樹脂等溶解、分散在適當溶劑中,調整清漆,以成為規定厚度的方式在間隔件上塗佈該清漆而形成塗膜後,在規定條件下使該塗膜乾燥。作為塗佈方法,並無特別限定,可列舉例如輥塗佈、絲網塗佈、凹版塗佈等。另外,作為乾燥條件,例如在乾燥溫度70~160℃、乾燥時間1~30分鐘的範圍內進行。作為前述溶劑,可列舉甲乙酮、乙酸乙酯、甲苯等。   另外,最外層11a可經由混煉擠出來製造。作為經由混煉擠出進行製造的方法,可列舉例如:將用於形成最外層11a的各成分利用混煉輥、加壓式捏合機、擠出機等公知的混煉機進行熔融混煉,從而調製成混煉物,對所得的混煉物進行增塑加工而形成為薄片狀的方法等。   具體而言,藉由不使熔融混煉後的混煉物冷卻而直接在高溫狀態下進行擠出成形,從而可以形成樹脂薄片。作為這種擠出方法,並無特別限制,可列舉T模擠出法、輥壓延法、輥混煉法、共擠出法、壓延成型法等。作為擠出溫度,較佳為上述各成分的軟化點以上,若考慮環氧樹脂的熱硬化性及成型性,則例如為40~150℃,較佳為50~140℃,進一步較佳為70~120℃。經由以上方式,可以形成最外層11a。   [0073] <最內層之製作方法>   最內層11b可經由與最外層11a同樣的方法來形成。   [0074] 另外,作為樹脂薄片11的其他製造方法,可以在間隔件上塗佈用於形成最外層11a的清漆、並使之乾燥而得到最外層11a後,在最外層11a上塗佈用於形成最內層11b的清漆,並使其乾燥。   [0075] [中空型電子裝置封裝體的製造方法]   本發明的樹脂薄片可以適宜作為中空密封用的電子裝置密封用樹脂薄片來使用。   本實施方式的中空型電子裝置封裝體的製造方法至少包含:   準備將電子裝置介由凸塊固定於黏著物上的層合體的步驟;   準備前述樹脂薄片的步驟;   將前述樹脂薄片以前述最內層與上述層合體的上述電子裝置上接觸的方式而配置在前述層合體的前述電子裝置上的步驟;   利用熱壓將前述電子裝置埋入上述樹脂薄片的步驟;以及   在前述埋入步驟後,使上述樹脂薄片熱硬化而得到密封體的步驟。   [0076] 作為前述黏著物,並無特別限定,可列舉例如印刷佈線基板、陶瓷基板、矽基板、金屬基板、LTCC(Low Temperature Co-fired Ceramics,低溫共燒陶瓷)基板等。本實施方式中,利用樹脂薄片11對搭載在印刷佈線基板12上的SAW晶片13進行中空密封而製作中空型電子裝置封裝體。尚,SAW晶片13係指具有SAW(Surface Acoustic Wave)濾波器的晶片。即,在本實施方式中,對本發明的電子裝置為具有SAW(Surface Acoustic Wave)濾波器的晶片的情況進行說明。   [0077] 圖2~圖6係用於說明本實施方式的中空型電子裝置封裝體的製造方法的剖面示意圖。   [0078] (準備層合體的步驟)   本實施方式的中空型電子裝置封裝體的製造方法中,首先,準備在印刷佈線基板12上搭載有多個SAW晶片13(SAW濾波器13)的層合體15(參照圖2)。SAW晶片13可經由利用公知的方法對形成有規定的梳形電極的壓電晶體進行切割使其單片化而形成。在將SAW晶片13搭載到印刷佈線基板12時,可以使用倒裝晶片接合機或晶片接合機等公知的裝置。SAW晶片13與印刷佈線基板12介由凸塊13a進行電連接。另外,在SAW晶片13與印刷佈線基板12之間維持有中空部14,而不會阻礙SAW濾波器表面的表面彈性波的傳播。SAW晶片13與印刷佈線基板12之間的距離(中空部的寬度)可以適當設定,通常為10~100μm左右。   [0079] (準備樹脂薄片的步驟)   另外,在本實施方式的中空型電子裝置封裝體的製造方法中,準備樹脂薄片11(參照圖1)。   [0080] (配置樹脂薄片的步驟)   接著,如圖3所示,將層合體15以固定有SAW晶片13的面朝上的方式配置在下側加熱板22上,並且在SAW晶片13面上配置樹脂薄片11。此時,以SAW晶片13的面與樹脂薄片11的最內層11b接觸的方式進行配置。在該步驟中,可以在下側加熱板22上首先配置層合體15,之後,在層合體15上配置樹脂薄片11;亦可以在層合體15上先層合樹脂薄片11,之後,將層合有層合體15與樹脂薄片11的層合物配置在下側加熱板22上。   [0081] (將電子裝置埋入樹脂薄片的步驟)   接著,如圖4所示,利用下側加熱板22與上側加熱板24進行熱壓,將SAW晶片13埋入樹脂薄片11中。下側加熱板22及上側加熱板24可為平板擠壓所具備的裝置。樹脂薄片11作為用於保護SAW晶片13及其附帶的元件免受外部環境影響的密封樹脂而發揮功能。   [0082] 該埋入步驟較佳按照以下方式進行:使構成樹脂薄片11的樹脂的、進入到SAW濾波器13與印刷佈線基板12之間的中空部14的進入量X2(參照圖7)達到0μm以上且20μm以下。圖7為用於說明進入量X2的剖面部分放大圖。上述進入量X2較佳為0μm以上且15μm以下。作為使上述進入量X2為0μm以上且20μm以下的方法,可經由調整樹脂薄片11的黏度、或調整熱壓條件來達成。更具體而言,可列舉例如較高地設定壓力及溫度的方法。   尚,在將多個SAW濾波器13一併密封的情況下,「進入量X2為0μm以上且20μm以下」係指:對於全部的SAW濾波器13而言「進入量X2為0μm以上且20μm以下」。   [0083] 具體而言,作為將SAW晶片13埋入樹脂薄片11時的熱壓條件,根據樹脂薄片11的黏度等而不同,但溫度較佳為20~150℃,更佳為40~100℃,壓力例如為0.01~20MPa,較佳為0.05~5MPa,時間例如為0.3~10分鐘,較佳為0.5~5分鐘。作為熱壓方法,可列舉平行平板擠壓或輥擠壓。其中,較佳平行平板擠壓。經由使熱壓條件為上述數值範圍內,從而容易使進入量X2為上述數值範圍內。   若熱壓時的溫度過高,則在熱壓中引發反應,有侵入量出現偏差的可能性,從操作性的觀點出發,亦要求低溫(例如100℃以下)等。另外,從防止晶片發生破損的觀點出發,壓力也較佳低壓。   [0084] 另外,若考慮到提高樹脂薄片11對SAW晶片13及印刷佈線基板12的密著性及追隨性,則較佳在減壓條件下進行擠壓。   作為前述減壓條件,壓力例如為0~20Torr,較佳為5~10Torr,減壓保持時間(從減壓開始到擠壓開始為止的時間)例如為5~600秒,較佳為10~300秒。   [0085] (間隔件剝離步驟)   接著,如本實施方式那樣,在以單面附有間隔件的狀態使用樹脂薄片11的情況下,剝離間隔件11a(參照圖5)。   [0086] (使其熱硬化而得到密封體的步驟)   接著,使樹脂薄片11熱硬化而得到密封體25。   得到該密封體的步驟較佳按照如下方式進行:將得到密封體25的步驟之後的狀態的、前述樹脂進入到中空部14的進入量設為Y2時,由前述進入量Y2減去上述進入量X2所得的值達到30μm以下。由前述進入量Y2減去上述進入量X2所得的值較佳為25μm以下。作為使由前述進入量Y2減去前述進入量X2所得的值為30μm以下的方法,可經由調整樹脂薄片11的硬化前的黏度、或者以使加熱時的硬化速度變快的方式調整樹脂薄片11的構成材料來達成。具體而言,例如可經由選擇上述硬化促進劑來達成。   [0087] 具體而言,作為熱硬化處理的條件,根據樹脂薄片11的黏度或構成材料等而不同,但加熱溫度較佳為100℃以上,更佳為120℃以上。另一方面,加熱溫度的上限較佳為200℃以下,更佳為180℃以下。加熱時間較佳為10分鐘以上,更佳為30分鐘以上。另一方面,加熱時間的上限較佳為180分鐘以下,更佳為120分鐘以下。另外,也可以根據需要進行加壓,較佳為0.1MPa以上,更佳為0.5MPa以上。另一方面,上限較佳為10MPa以下,更佳為5MPa以下。   經由將熱硬化處理的條件設為上述數值範圍內,從而使從埋入步驟後到熱硬化步驟後為止的期間的樹脂的流動距離、即由進入量Y2減去上述進入量X2所得的值容易為30μm以下。   [0088] 在僅密封1個作為電子裝置的SAW濾波器13的情況下,可以將密封體25作為1個中空型電子裝置封裝體。另外,在將多個SAW濾波器13一併密封的情況下,經由分割為單個SAW濾波器,從而可以各自製成1個中空型電子裝置封裝體。即,如本實施方式那樣,在將多個SAW濾波器13一併密封的情況下,還可以進行下述的構成。   [0089] (切割步驟)   在熱硬化步驟之後,可以進行密封體25的切割(參照圖6)。由此,可以得到以SAW晶片13為單位的中空封裝體18(中空型電子裝置封裝體)。在密封體25的最外層11a側黏貼切割膠帶後進行切割。由於在最外層11a黏貼切割膠帶,因此在切割後可以容易將中空封裝體18從切割膠帶剝離。   [0090] (基板安裝步驟)   根據需要,可以進行對中空封裝體18形成凸塊、再將其安裝在另外的基板(未圖示)的基板安裝步驟。在將中空封裝體18安裝到基板時,可以使用倒裝晶片接合機或晶片接合機等公知的裝置。   [0091] 上述的實施方式中,對本發明的中空型電子裝置是作為具有可動部的半導體晶片的SAW晶片13的情況進行了說明。但是,只要本發明的中空型電子裝置在黏著物與電子裝置之間具有中空部,則並不限定於該例。例如也可為具有壓力感測器、振動感測器等MEMS(Micro Electro Mechanical Systems,微機電系統)作為可動部的半導體晶片。   另外,在上述的本實施方式中,對使用樹脂薄片並藉由平行平板擠壓而埋入電子裝置的情況進行了說明,但是,本發明並不限定於該例,亦可在真空狀態的真空腔室內,藉由脫模膜將電子裝置與樹脂薄片的層合物密閉後,向腔室內導入大氣壓以上的氣體,將電子裝置埋入樹脂薄片的熱硬化性樹脂薄片中。具體而言,可經由日本特開2013-52424號公報中記載的方法將電子裝置埋入樹脂薄片的熱硬化性樹脂薄片中。 [實施例]   [0092] 以下,對本發明的適合的實施例進行例示性地詳細說明。但是,該實施例中記載的材料或摻合量等只要沒有特別限定性的記載,則均無將本發明的範圍僅限定於此的意圖。   [0093] 對在實施例中使用的樹脂薄片的成分進行說明。   環氧樹脂:新日鐵化學(股)製的YSLV-80XY(雙酚F型環氧樹脂、環氧當量200g/eq.、軟化點80℃)   酚樹脂:群榮化學製的LVR8210DL(酚醛型酚樹脂、羥基當量104g/eq.、軟化點60℃)   熱可塑性樹脂A:根上工業公司製的HME-2006M(含羧基的丙烯酸酯共聚物、重量平均分子量:約60萬、玻璃轉移溫度(Tg):-35℃)   熱可塑性樹脂B:根上工業公司製的NDHB-101(含縮水甘油基的丙烯酸酯共聚物、重量平均分子量:約100萬、玻璃轉移溫度(Tg):-31℃)   熱可塑性樹脂C:根上工業公司製的ND-77L(含縮水甘油基的丙烯酸酯共聚物、重量平均分子量:約110萬、玻璃轉移溫度(Tg):-10℃)   熱可塑性樹脂D:根上工業公司製的ND-78L(含縮水甘油基的丙烯酸酯共聚物、重量平均分子量:約110萬、玻璃轉移溫度(Tg):-15℃)   熱可塑性樹脂E:根上工業公司製的NDF-001(含縮水甘油基的丙烯酸酯共聚物、重量平均分子量:約50萬、玻璃轉移溫度(Tg):4℃)   熱可塑性樹脂F:根上工業公司製的NDF-002(含縮水甘油基的丙烯酸酯共聚物、重量平均分子量:約10萬、玻璃轉移溫度(Tg):4℃)   無機填充劑A:電化學工業公司製的FB-5SDC(平均粒徑5μm、未進行表面處理)   無機填充劑B:將Admatechs公司製的SO-25R(平均粒徑0.5μm)用3-甲基丙烯醯氧基丙基三甲氧基矽烷(信越化學公司製的製品名:KBM-503)進行表面處理後的無機填充劑。相對於100重量份無機填充劑B,用1重量份的矽烷偶合劑進行表面處理。   碳黑:三菱化學公司製的#20   硬化促進劑:四國化成工業公司製的2PHZ-PW(2-苯基-4,5-二羥基甲基咪唑)   [0094] [實施例及比較例的樹脂薄片之製作]   按照表1中記載的摻合比,使各成分溶解、分散於作為溶劑的甲乙酮,得到濃度為85重量%的清漆。將該清漆塗佈在經過矽酮脫模處理的間隔件上後,在110℃下乾燥5分鐘。由此得到厚度55μm的薄片。分別將該薄片分別層合上層3層、下層1層,製作厚度220μm的樹脂薄片。   尚,在下述評估中,樹脂薄片的厚度較佳以下述評估中使用的晶片厚度與凸塊高度的合計以上的厚度來實施。這是由於:若薄片厚過薄,則侵入量減少,無法進行穩定的評估。因此,在本實施例中,下述評估中的「晶片厚度與凸塊高度的合計」為220μm。   [0095] (頂面凹凸評估)   圖8(a)為用於說明頂面凹凸評估的剖面示意圖,圖8(b)為其平面平面圖。圖9~圖11為用於說明頂面凹凸評估的剖面示意圖。圖12為用於說明頂面凹凸評估的平面示意圖。   [0096] <步驟A1>   首先,準備下述樣式的4個模型晶片113(參照圖8(a)、圖8(b))。 [模型晶片的樣式]   晶片尺寸:縱3mm、橫3mm、厚200μm   晶片中空Gap:20μm(即,凸塊高度20μm)   材質:矽晶片晶片:感光性樹脂凸塊   尚,近年來,電子裝置的薄型化推進,要求晶片或半導體封裝體的薄型化。因此,要求形成於晶片表面的凸塊高度為10~50μm左右。在此,由於在將矽晶片磨削至規定厚度後在晶片表面形成凸塊,因此若晶片厚度太薄,則無法有效地形成凸塊。因此,在本實施例中,考慮到可穩定地形成凸塊的晶片厚度的限度,採用約200μm作為晶片厚度進行了評估。另外,為了抑制評估的偏差,凸塊高度越低越好。從該觀點出發,將凸塊高度設為20μm進行了評估。   [0097] <步驟B1>   在基板112(尺寸:縱6cm、橫10cm、厚度:1.3mm、材質:玻璃)上,以與相鄰的晶片的距離W為300μm的方式排列所準備的模型晶片113(參照圖8(a)、圖8(b))。   [0098] <步驟C1>   將上述實施例、比較例中製作的厚度220μm的樹脂薄片切割成縱25mm、橫25mm,作為樣品111(參照圖9)。   [0099] <步驟D1>   將樣品111配置在模型晶片113上(參照圖10)。   [0100] <步驟E1>   在貼附有間隔件110的狀態下,在75℃60秒、壓力300kPa的條件下,藉由真空擠壓進行層壓(參照圖11)。層壓經由下側加熱板122與上側加熱板124進行熱壓來進行。之後,在150℃下加熱1小時。之後,將間隔件110剝離。尚,在本實施例中,作為硬化促進劑,使用四國化成工業公司製的2PHZ-PW(2-苯基-4,5-二羥基甲基咪唑),該製品「2PHZ-PW」的反應起始溫度為145℃附近,因此將加熱條件設為150℃、1小時。   [0101] <步驟F1>   利用接觸式表面粗糙度計對平面下樣品111的中心Y((參照圖12)的部分的厚度進行了測定。以晶片的中央為基準,將晶片晶片間的凹陷量為30μm以上的情況設為×,將不足30μm的情況設為○,進行了評估。結果如表1所示。   [0102] (擠壓時侵入量評估)   圖13(a)為用於說明擠壓時侵入量評估的剖面示意圖,圖13(b)為其平面平面圖。圖14~圖16為用於說明頂面凹凸評估的剖面示意圖。   [0103] <步驟A2>   首先,準備將下述樣式的25個模型晶片213介由樹脂凸塊213a安裝於玻璃基板212(縱6cm、橫10cm、厚1.3mm)的模型晶片安裝基板215(參照圖13(a)、圖13(b))。玻璃基板212與模型晶片213之間的間隙寬度為50μm。   相鄰的晶片彼此的距離W2為300μm。 [模型晶片的樣式]   晶片尺寸:縱3mm、橫3mm、厚200μm   凸塊材質:樹脂凸塊(樹脂的材質:丙烯酸系樹脂)   凸塊高度:20μm   凸塊數:100個凸塊   凸塊的配置位置:縱10個×橫10個、200μm間距   具體而言,將模型晶片213在下述接合條件下安裝於玻璃基板212,由此準備模型晶片安裝基板215。 <接合條件>   裝置:松下電工(股)製   接合條件:200℃、3N、1秒、超聲波輸出2W   [0104] <步驟B2>   將上述實施例、比較例中製作的厚度220μm的樹脂薄片切割成縱3cm、橫3cm,作為樣品211(參照圖14)。   [0105] <步驟C2>   將樣品211配置在模型晶片安裝基板215的模型晶片213上(參照圖15)。   [0106] <步驟D2>   在貼附有間隔件210的狀態下、在下述埋入條件下,將模型晶片213埋入樣品211中(參照圖16)。埋入經由下側加熱板222與上側加熱板224熱壓來進行。 <埋入條件>   擠壓方法:平板擠壓   溫度:75℃   加壓力:1500kPa   擠壓時的真空度:1.6kPa   擠壓時間:1分鐘   [0107] <步驟E2>   開放於大氣壓後,在150℃的熱風乾燥機中放置1小時。由此,使前述樣品熱硬化而得到密封體樣品。測定進入到所得的密封體樣品的模型晶片213與玻璃基板212之間的中空部的、構成樣品211的樹脂的進入量Y1。具體而言,利用KEYENCE公司製的商品名「Digital Microscope」(200倍),測定進入到模型晶片213與玻璃基板212之間的中空部的樹脂的進入量Y1。樹脂進入量Y1,測定從SAW晶片的端部進入中空部的樹脂的最大到達距離,將其作為樹脂進入量Y1。尚,在未進入而是中空部擴展到的比SAW晶片更靠外側時,樹脂進入量表示為負值。(在本實施例、比較例中,並無為負值的情況)。   進入量Y1的測定在配置於外側的模型晶片213-1與配置於內側的模型晶片213-2中進行。   配置於外側的模型晶片213-1係指:位於配置成5×5的正方形的各頂點的模型晶片。配置於外側的模型晶片213-1的進入量Y1為4個晶片的平均值(表1中,表述為外側進入量)。   配置於內側的模型晶片213-2係指:在配置成5×5的正方形的晶片中,位於上數第3個(下數第3個)、左數第3個(右數第3個)的模型晶片。配置於內側的模型晶片213-2的進入量Y1採用該1個模型晶片213-2的進入量Y1的測定值(表1中,表述為內側進入量)。   將內側進入量與外側進入量兩者為20μm以下、且內側進入量與外側進入量之差為30μm以下的情況評估為〇。   將內側進入量與外側進入量中的至少一方大於20μm的情況、內側進入量與外側進入量之差大於30μm的情況評估為×。   [0108] <薄片全體的硬化前的玻璃轉移溫度Tg的測定>   玻璃轉移溫度Tg藉由使用動態黏彈性測定裝置(DMA、頻率1Hz、升溫速度10℃/分鐘)測定的損耗角正切(tanδ)的極大值來得到。   動態黏彈性測定裝置(DMA):商品名“RSAG2”、TA Instruments公司製   模式:拉伸模式   升溫速度:10℃/分鐘   頻率:1Hz   樣品厚度:260μm   卡盤間距離:20mm   應變:0.1%   測定溫度範圍:-50℃~100℃   [0109] [Best Mode for Carrying Out the Invention] [0022] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to these embodiments. [0023] (Resin Sheet) FIG. 1 is a schematic cross-sectional view of a resin sheet (resin sheet) for sealing an electronic device according to this embodiment. As shown in FIG. 1, a resin sheet 11 for sealing electronic devices (hereinafter also referred to as “resin sheet 11”) is typically laminated on a spacer 10 such as a polyethylene terephthalate (PET) film. Status to provide. In order to facilitate the peeling of the resin sheet 11, the spacer 10 may be subjected to a release treatment. [0024] In this embodiment, a case where a spacer is laminated only on one side of the resin sheet will be described. However, the present invention is not limited to this example, and the interval may be laminated on both sides of the resin sheet. Pieces. In this case, the spacer may be peeled and used immediately before use. In the present invention, the resin sheet may be provided as a monomer of the resin sheet without being laminated on the spacer. In addition, other layers may be laminated on the resin sheet within a range not departing from the intention of the present invention. [0025] The resin sheet 11 has an outermost layer 11a and an innermost layer 11b laminated on the outermost layer 11a. [0026] In the present embodiment, a case where the resin sheet has a two-layer structure of an outermost layer and an innermost layer has been described. However, the present invention is not limited to this example. The resin sheet of the present invention only needs to expose the outermost layer on one side and the innermost layer on the other side, and there may be other layers between the outermost layer and the innermost layer. [0027] (Outermost Layer) The outermost layer 11a contains an inorganic filler and a thermoplastic resin. Content of the said inorganic filler is 85 weight% or more with respect to the whole outermost layer 11a, Preferably it is 87 weight% or more, More preferably, it is 89 weight% or more. In addition, the more the content of the inorganic filler is, the better, but from the viewpoint of sheet formability, it is, for example, 93% by weight or less and 90% by weight or less. Content of the said thermoplastic resin is 15 weight% or less with respect to the whole resin component of the outermost layer 11a, Preferably it is 12 weight% or less, More preferably, it is 8 weight% or less. [0028] The outermost layer 11a contains an inorganic filler in a proportion of 85% by weight or more based on the entire outermost layer 11a. Therefore, since it has a certain degree of hardness after hardening, the peelability of the electronic device from the dicing tape becomes good. In addition, the outermost layer 11a can suppress unevenness of the top surface at the time of embedding. This is because the content of the thermoplastic resin in the outermost layer is 15% by weight or less based on the entire resin component, so that the shape of the top surface is smooth and sufficiently flowed under the influence of the low molecular weight components of the epoxy resin and the phenol component. [0029] Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, neoprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, Polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamine resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET or PBT, etc. Ester resin, polyamidoimide resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. These thermoplastic resins may be used alone or in combination of two or more. Among these, an acrylic resin is preferable from the viewpoints that flexibility is easily obtained and dispersibility with an epoxy resin is good. [0030] The acrylic resin is not particularly limited, and examples thereof include 1 of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. A polymer (acrylic copolymer) of one or two or more kinds as a component. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tert-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2- Ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, stearyl Or eicosyl and the like. [0031] Among the aforementioned acrylic resins, resins having a weight average molecular weight of 50,000 or more are preferable, resins having a weight average molecular weight of 100,000 to 2 million are more preferable, and resins having a weight average molecular weight of 300,000 to 1.6 million are more preferable. . If it is in the said numerical range, the viscosity and flexibility of the outermost layer 11a can be improved further. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated by polystyrene conversion. More specifically, in this specification, the weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated by polystyrene conversion. The weight-average molecular weight (Mw) is a value measured using a Tosoh GPC: HLC-8120GPC under the following measurement conditions. (Measurement conditions) Column: GMH equivalent XL × 3 flows: 1. 0ml / min detector: RI detector sample concentration: 0. 1% by weight THF solution injection amount: 150 μl [0032] The other monomers forming the polymer are not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, and clothing Various carboxyl-containing monomers such as fumaric acid, maleic acid, fumaric acid or crotonic acid; various anhydride monomers such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth) acrylate, (meth) acrylic acid 2-hydroxypropyl ester, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, (Meth) acrylic acid 12-hydroxylauryl or (4-hydroxymethylcyclohexyl) -methacrylic acid and other various hydroxyl-containing monomers; styrene sulfonic acid, allyl sulfonic acid, 2- (methyl) Sulfonyl-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate or (meth) acrylic acid naphthalenesulfonic acid Monomer; or various phosphate-containing monomers such as 2-hydroxyethylpropenyl phosphonium phosphate. Among these, from the viewpoint that the viscosity or elastic coefficient of the outermost layer 11a can be increased by reacting with the epoxy resin, a carboxyl group-containing monomer, a glycidyl group (epoxy group) -containing monomer, and a hydroxyl group-containing monomer are preferred. At least one of. [0033] The inorganic filler is not particularly limited, and various conventionally known fillers can be used, and examples thereof include quartz glass, talc, silica (fused silica or crystalline silica), alumina, and nitrogen. Powder of aluminum, silicon nitride and boron nitride. These can be used alone or in combination of two or more. Among them, for the reason that the coefficient of linear expansion can be reduced well, silicon dioxide and aluminum oxide are preferred, and silicon dioxide is more preferred. [0034] As the silicon dioxide, silicon dioxide powder is preferred, and fused silicon dioxide powder is more preferred. Examples of the fused silica powder include spherical fused silica powder and crushed fused silica powder. However, from the viewpoint of fluidity, spherical fused silica powder is preferred. [0035] The average particle diameter of the aforementioned inorganic filler is preferably an average particle diameter in the range of 20 μm or less, more preferably 0. The average particle diameter in the range of 1 to 15 μm is particularly preferably 0. An average particle diameter in the range of 5 to 10 μm. In addition, as the inorganic filler, two or more kinds of inorganic fillers having different average particle diameters may be used. When two or more types of inorganic fillers having different average particle diameters are used, the above-mentioned "average particle diameter of the inorganic filler is 20 µm or less" means that the average particle diameter of the entire inorganic filler is 20 µm or less. [0036] The shape of the inorganic filler is not particularly limited, and may be any shape such as a spherical shape (including an ellipsoid shape), a polyhedron shape, a polygonal column shape, a flat shape, and an indefinite shape, but a spherical shape is preferred. [0037] The inorganic filler contained in the outermost layer 11a preferably has two peaks in a particle size distribution measured by a laser diffraction scattering method. Such an inorganic filler can be obtained, for example, by mixing two types of inorganic fillers having different average particle diameters. When an inorganic filler having two peaks in the particle size distribution is used, the inorganic filler can be filled at a high density. As a result, the content of the inorganic filler can be further increased. The aforementioned two peaks are not particularly limited, but it is preferable that the peak on the side with a large particle diameter is in the range of 3 to 30 μm, and the peak on the side with a small particle diameter is 0. Within the range of 1 to 1 μm. If the two peaks are within the aforementioned numerical range, the content of the inorganic filler can be further increased. Specifically, the particle size distribution can be obtained by the following method. (A) Put the outermost layer 11a into a crucible, and heat it strongly at 700 ° C for 2 hours in the atmosphere to ash it. (B) Disperse the obtained ash into pure water, perform ultrasonic treatment for 10 minutes, and use a laser diffraction scattering particle size distribution measuring device (manufactured by Beckman Coulter, "LS 13 320"; wet method) to determine the particle size. Distribution (volume basis). The composition of the outermost layer 11a is an organic component except for the inorganic filler. Actually, all of the organic components are burned out by the above-mentioned intense heat treatment. Therefore, the obtained ash is measured as an inorganic filler. However, the calculation of the average particle diameter can also be performed simultaneously with the particle size distribution. [0038] In the outermost layer 11a, the aforementioned inorganic filler is preferably surface-treated with a silane coupling agent in advance. [0039] The silane coupling agent is not particularly limited as long as it has a methacrylic acid group or an acrylic acid group and can be surface-treated with an inorganic filler. Specific examples of the silane coupling agent include 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and 3-methacryl Ethoxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, methacryloxyoctyltrimethoxysilane, methacryloxyoctyl Triethoxysilane. Among these, from the viewpoints of reactivity and cost, 3-methacryloxypropyltrimethoxysilane is preferred. [0040] In the case where the outermost layer 11a contains an inorganic filler that has been surface-treated with a compound having a methacryloxy group or acryloxyl group as a silane coupling agent in advance, 100 parts by weight of the inorganic filler, It is better to use 0 in advance. 5 to 2 parts by weight of a silane coupling agent performs surface treatment on the inorganic filler. When the surface treatment of the inorganic filler is performed using a silane coupling agent, the viscosity of the outermost layer 11a can be suppressed from becoming too large. [0041] The outermost layer 11a contains an inorganic filler that has been surface-treated with a compound having a methacryloxy group or acryloxyl group as a silane coupling agent in advance, and uses two kinds of inorganics having different average particle sizes. When the mixture of fillers is used as the inorganic filler, it is preferable to surface-treat the inorganic filler having a smaller average particle diameter with at least a silane coupling agent in advance. Since the inorganic filler having a smaller average particle diameter has a larger specific surface area, it is possible to further suppress an increase in viscosity. When a mixture of two inorganic fillers having different average particle diameters is used as the inorganic filler, it is more preferable to use a silane coupling agent to preliminarily use an inorganic filler having a smaller average particle diameter and a larger inorganic filler. Both agents are surface-treated. In this case, the increase in viscosity can be further suppressed. [0042] The outermost layer 11a preferably contains an epoxy resin and a phenol resin. Thereby, good thermosetting properties are obtained. [0043] The epoxy resin is not particularly limited. For example, triphenylmethane epoxy resin, cresol novolac epoxy resin, biphenyl epoxy resin, modified bisphenol A epoxy resin, bisphenol A epoxy resin, and bisphenol F epoxy resin can be used. Various epoxy resins, such as epoxy resin, modified bisphenol F epoxy resin, dicyclopentadiene epoxy resin, phenol novolac epoxy resin, and phenoxy resin. These epoxy resins may be used alone or in combination of two or more. [0044] From the viewpoint of ensuring the toughness and the reactivity of the epoxy resin after hardening, it is preferable that the ring is a solid ring at a normal temperature of 150 to 250, a softening point or a melting point of 50 to 130 ° C. Among the oxygen resins, bisphenol F-type epoxy resin, bisphenol A-type epoxy resin, biphenyl-type epoxy resin and the like are more preferable from the viewpoint of moldability and reliability. [0045] The phenol resin is not particularly limited as long as it is a phenol resin that undergoes a curing reaction with an epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a biphenylaralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolac resin, a resol novolac resin, and the like can be used. These phenol resins may be used alone or in combination of two or more. [0046] As the phenol resin, a resin having a hydroxyl equivalent of 70 to 250 and a softening point of 50 to 110 ° C. is preferably used from the viewpoint of reactivity with an epoxy resin. Among these, a curing reactivity is high and inexpensive. From the viewpoint, a phenol novolac resin can be suitably used. In addition, from the viewpoint of reliability, a low-hygroscopicity phenol resin such as a phenol aralkyl resin or a biphenyl aralkyl resin can also be suitably used. [0047] The blending ratio of the epoxy resin and the phenol resin, from the viewpoint of curing reactivity, it is preferable to make the total of hydroxyl groups in the phenol resin reach 0 with respect to 1 equivalent of the epoxy group in the epoxy resin. 7 ~ 1. 5 equivalents are blended, more preferably 0. 9 ~ 1. 2 equivalents. [0048] The lower limit of the total content of the epoxy resin and the phenol resin in the outermost layer 11a is preferably 2% by weight or more, and more preferably 3% by weight or more. When it is 2% by weight or more, the adhesive force to electronic devices, substrates, and the like is well obtained. On the other hand, the upper limit of the total content is preferably 25% by weight or less, and more preferably 20% by weight or less. If it is 25% by weight or less, the hygroscopicity of the resin sheet can be reduced. [0049] The outermost layer 11a preferably contains a hardening accelerator. [0050] The curing accelerator is not particularly limited as long as it hardens the epoxy resin and the phenol resin. Examples include 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6- [2'-formaldehyde Imidazolyl- (1 ')]-ethyl-s-triazine and the like. [0051] The content of the hardening accelerator relative to 100 parts by weight of the total of the epoxy resin and the phenol resin is preferably 0. 1 to 5 parts by weight. [0052] The outermost layer 11a may contain a flame retardant component as necessary. As a result, it is possible to reduce the expansion of combustion during a fire due to a short circuit or heat generation of a component. As the flame retardant component, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite metal hydroxide can be used; phosphazene-based flame retardant Wait. [0053] The outermost layer 11a preferably contains a pigment. The pigment is not particularly limited, and examples thereof include carbon black. [0054] The content of the pigment in the outermost layer 11a is preferably 0. 1 to 2% by weight. If 0. If it is 1% by weight or more, good marking properties are obtained. If it is 2% by weight or less, the strength of the cured resin sheet can be secured. [0055] In the resin composition for forming the outermost layer 11a, in addition to the above components, other additives may be appropriately blended as necessary. [0056] The thickness of the outermost layer 11a is not particularly limited, and is, for example, 100 to 200 μm. If it exists in the said range, it can shape | mold smoothly into a top surface shape with respect to the wafer thickness of 100-250 micrometers. [Inner Layer] The innermost layer 11b contains a thermoplastic resin containing a functional group. Content of the said functional group containing thermoplastic resin is 90 weight% or more with respect to the whole resin component of the innermost layer 11b, Preferably it is 93 weight% or more, More preferably, it is 95 weight% or more. The weight average molecular weight of the functional group-containing thermoplastic resin is 800,000 or more, preferably 1 million or more, and more preferably 1.2 million or more. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated by polystyrene conversion. The detailed measurement method is as described above. [0058] The resin sheet 11 is laminated on the electronic device so that the innermost layer 11b is in contact with the electronic device, and then the electronic device is embedded and used. The innermost layer 11b contains a functional group-containing thermoplastic resin in a proportion of 90% by weight or more with respect to the entire resin component of the innermost layer 11b. Since there are many thermoplastic resin components, the resin can be inserted into the hollow portion between the electronic device and the adhesive when the electronic device is embedded. Moreover, since the said functional group containing thermoplastic resin has a functional group, it cross-links during the period from the embedment of an electronic device to completion | finish of thermosetting. In addition, since the weight-average molecular weight of the functional group-containing thermoplastic resin is 800,000 or more, it does not easily flow even when heated. Therefore, it is possible to reduce the amount of resin entering (moving amount) in the hollow portion between the electronic device and the adherend. [0059] Examples of the functional group-containing thermoplastic resin include a functional group-containing acrylic resin. [0060] Examples of the functional group-containing acrylic resin include acrylic resins having any one or more of a glycidyl group and an amino group as a functional group. As a specific example of the said functional group containing acrylic resin, the acrylic resin which has the said functional group among the acrylic resin demonstrated in the item of the outermost layer 11a is mentioned. Among these, a glycidyl group-containing acrylic resin is preferable. If it is an acrylic resin containing a glycidyl group, the amount of resin movement during the period from the embedment of the electronic device to the end of the thermal curing can be further reduced. [0061] The innermost layer 11b preferably contains a phenol resin as a curable component. The content of the phenol resin relative to the equivalent of the functional group-containing thermoplastic resin is preferably 0. 8 to 2. Within the range of 0, more preferably 0. 9 ~ 1. Within the range of 5, more preferably 1. 0 to 1. Within 2 range. If the content of the aforementioned phenol resin contained in the innermost layer 11b with respect to the aforementioned functional group-containing thermoplastic resin, the equivalent ratio is 0. 8 to 2. In the range of 0, it is suitable to react with the functional group of the functional group-containing thermoplastic resin. As a result, it is possible to further reduce the amount of resin movement during the period from the embedment of the electronic device to the end of the thermal curing. [0062] Examples of the phenol resin include the phenol resin described in the item of the outermost layer 11a. [0063] The innermost layer 11b preferably does not include an epoxy resin. [0064] The innermost layer 11b preferably does not contain an inorganic filler or, even if it does, the inorganic filler is contained in a range of 50% by weight or less with respect to the innermost layer 11b. Examples of the inorganic filler include the inorganic fillers described in the outermost layer 11a. [0065] The innermost layer 11b preferably contains a hardening accelerator. Examples of the hardening accelerator include the hardening accelerator described in the outermost layer 11a. [0066] The innermost layer 11b preferably contains a pigment. Examples of the pigment include pigments described in the outermost layer 11a. [0067] In the resin composition for forming the innermost layer 11b, other additives may be appropriately blended as necessary in addition to the above components. [0068] The thickness of the innermost layer 11b is not particularly limited, and is, for example, 50 to 100 μm. Within the above range, the innermost layer can prevent the outermost layer from flowing. [0069] The thickness of the entire resin sheet 11 is not particularly limited, and is, for example, 150 μm to 1000 μm. Within this range, a resin sheet having a wafer thickness of 100 to 700 μm can be stably formed. [0070] When measuring the glass transition temperature Tg of the entire resin sheet 11 before curing, the resin sheet 11 preferably has at least one glass transition temperature Tg below 0 ° C. If at least one glass transition temperature Tg exists below 0 ° C, it can be said that an acrylic resin is contained. If an acrylic resin is contained, it is more suitable for the resin to enter the hollow portion between the electronic device and the adhesive when the electronic device is embedded. The method for measuring the glass transition temperature Tg is based on the method described in the examples. [Manufacturing Method of Resin Sheet] The resin sheet 11 is obtained by producing the outermost layer 11a and the innermost layer 11b separately and bonding them together. [0072] <Production Method of Outermost Layer> The outermost layer 11a can be formed by dissolving and dispersing a resin or the like for forming the outermost layer 11a in an appropriate solvent, adjusting the varnish, and forming a predetermined thickness on the spacer. After the varnish is applied thereon to form a coating film, the coating film is dried under predetermined conditions. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are performed, for example, in a range of a drying temperature of 70 to 160 ° C and a drying time of 1 to 30 minutes. Examples of the solvent include methyl ethyl ketone, ethyl acetate, and toluene. The outermost layer 11a can be produced through kneading and extrusion. As a method for manufacturing by kneading and extrusion, for example, each component for forming the outermost layer 11a is melt-kneaded by a known kneading machine such as a kneading roll, a pressure kneader, and an extruder. Thereby, a method of preparing a kneaded product, and a method of plasticizing the obtained kneaded product to form a sheet, and the like. Specifically, the resin sheet can be formed by directly performing extrusion molding at a high temperature without cooling the kneaded material after the melt-kneading. The extrusion method is not particularly limited, and examples thereof include a T-die extrusion method, a roll calender method, a roll kneading method, a coextrusion method, and a calendering method. The extrusion temperature is preferably above the softening point of each of the above components. In consideration of the thermosetting properties and moldability of the epoxy resin, it is, for example, 40 to 150 ° C, preferably 50 to 140 ° C, and more preferably 70. ~ 120 ° C. In the above manner, the outermost layer 11a can be formed. [0073] <Production Method of Innermost Layer> The innermost layer 11b can be formed by the same method as the outermost layer 11a. [0074] In addition, as another method for manufacturing the resin sheet 11, a varnish for forming the outermost layer 11a may be applied to the spacer, and dried to obtain the outermost layer 11a, and then applied to the outermost layer 11a. The varnish of the innermost layer 11b is formed and allowed to dry. [Manufacturing Method of Hollow Electronic Device Package] The resin sheet of the present invention can be suitably used as a resin sheet for electronic device sealing for hollow sealing. The method for manufacturing a hollow electronic device package according to this embodiment includes at least: a step of preparing a laminate in which an electronic device is fixed to an adhesive via a bump; a step of preparing the resin sheet; and placing the resin sheet in the innermost part. A step of disposing the layer on the electronic device of the laminated body in contact with the electronic device of the laminated body; a step of embedding the electronic device into the resin sheet by hot pressing; and after the embedding step, A step of thermally curing the resin sheet to obtain a sealed body. [0076] The adhesive is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a silicon substrate, a metal substrate, and a LTCC (Low Temperature Co-fired Ceramics) substrate. In this embodiment, the SAW wafer 13 mounted on the printed wiring board 12 is hollow-sealed with the resin sheet 11 to produce a hollow electronic device package. The SAW chip 13 refers to a wafer having a SAW (Surface Acoustic Wave) filter. That is, in this embodiment, a case where the electronic device of the present invention is a wafer having a SAW (Surface Acoustic Wave) filter will be described. 2 to 6 are schematic cross-sectional views for describing a method for manufacturing a hollow electronic device package according to this embodiment. [Step of Preparing Laminate] In the method of manufacturing a hollow electronic device package according to this embodiment, first, a laminate in which a plurality of SAW chips 13 (SAW filters 13) are mounted on a printed wiring board 12 is prepared. 15 (refer to Figure 2). The SAW wafer 13 can be formed by slicing a piezoelectric crystal having a predetermined comb electrode formed thereon by a known method and singulating the piezoelectric crystal. When mounting the SAW wafer 13 on the printed wiring board 12, a known device such as a flip chip bonder or a wafer bonder can be used. The SAW wafer 13 and the printed wiring board 12 are electrically connected via a bump 13a. In addition, a hollow portion 14 is maintained between the SAW wafer 13 and the printed wiring board 12 without hindering the propagation of the surface elastic wave on the surface of the SAW filter. The distance (the width of the hollow portion) between the SAW wafer 13 and the printed wiring board 12 can be appropriately set, and is usually about 10 to 100 μm. [0079] (Step of Preparing Resin Sheet) In the method for manufacturing a hollow electronic device package according to the present embodiment, a resin sheet 11 is prepared (see FIG. 1). [0080] (Step of Arranging Resin Sheet) Next, as shown in FIG. 3, the laminated body 15 is disposed on the lower heating plate 22 with the surface on which the SAW wafer 13 is fixed facing upward, and is disposed on the surface of the SAW wafer 13. Resin sheet 11. At this time, they are arranged so that the surface of the SAW wafer 13 is in contact with the innermost layer 11 b of the resin sheet 11. In this step, the laminated body 15 may be firstly arranged on the lower heating plate 22, and then the resin sheet 11 may be arranged on the laminated body 15; or the resin sheet 11 may be laminated on the laminated body 15 first, and then laminated with A laminate of the laminate 15 and the resin sheet 11 is arranged on the lower heating plate 22. [0081] (Step of Embedding Electronic Device in Resin Sheet) Next, as shown in FIG. 4, the lower heating plate 22 and the upper heating plate 24 are hot-pressed to embed the SAW wafer 13 into the resin sheet 11. The lower heating plate 22 and the upper heating plate 24 may be devices provided by flat pressing. The resin sheet 11 functions as a sealing resin for protecting the SAW wafer 13 and its attached components from the external environment. [0082] The embedding step is preferably performed in such a manner that the amount X2 (see FIG. 7) of the resin constituting the resin sheet 11 entering the hollow portion 14 between the SAW filter 13 and the printed wiring board 12 is reached (see FIG. 7). 0 μm or more and 20 μm or less. FIG. 7 is an enlarged cross-sectional view for explaining the amount X2 of entry. The amount X2 of entry is preferably 0 μm or more and 15 μm or less. As a method of making the said amount X2 of 0 micrometers or more and 20 micrometers or less, it can achieve by adjusting the viscosity of the resin sheet 11, or adjusting a hot-pressing condition. More specifically, for example, a method of setting the pressure and temperature relatively high may be mentioned. In the case where a plurality of SAW filters 13 are sealed together, the “entry amount X2 is 0 μm or more and 20 μm or less” means that the “entry amount X2 is 0 μm or more and 20 μm or less” for all the SAW filters 13. ". [0083] Specifically, the hot-pressing conditions when the SAW wafer 13 is embedded in the resin sheet 11 vary depending on the viscosity of the resin sheet 11 and the like, but the temperature is preferably 20 to 150 ° C, and more preferably 40 to 100 ° C. The pressure is, for example, 0. 01 ~ 20MPa, preferably 0. 05 ~ 5MPa, time is, for example, 0. 3 to 10 minutes, preferably 0. 5 to 5 minutes. Examples of the hot pressing method include parallel flat plate pressing or roll pressing. Among them, parallel flat plate extrusion is preferred. By making the hot-pressing condition within the above-mentioned numerical range, it is easy to make the entering amount X2 within the above-mentioned numerical range. If the temperature during hot pressing is too high, a reaction will occur during hot pressing, and there may be variations in the amount of intrusion. From the viewpoint of operability, a low temperature (for example, 100 ° C or lower) is also required. In addition, from the viewpoint of preventing breakage of the wafer, the pressure is also preferably low. [0084] In consideration of improving the adhesion and followability of the resin sheet 11 to the SAW wafer 13 and the printed wiring board 12, it is preferable to perform the extrusion under reduced pressure. As the aforementioned decompression conditions, the pressure is, for example, 0 to 20 Torr, preferably 5 to 10 Torr, and the decompression holding time (time from the start of decompression to the start of extrusion) is, for example, 5 to 600 seconds, preferably 10 to 300 second. [0085] (Separator Separating Step) Next, as in this embodiment, when the resin sheet 11 is used in a state where the spacer is attached on one side, the spacer 11a is peeled (see FIG. 5). [Step of Thermally Curing to Obtain a Sealed Body] Next, the resin sheet 11 is thermally cured to obtain a sealed body 25. The step of obtaining the sealing body is preferably performed as follows: When the amount of the resin entering the hollow portion 14 in the state after the step of obtaining the sealing body 25 is set to Y2, the amount of the entering amount is subtracted from the amount of the entering amount Y2. The value obtained by X2 is 30 μm or less. The value obtained by subtracting the above-mentioned entrance amount X2 from the above-mentioned entrance amount Y2 is preferably 25 μm or less. As a method of making the value obtained by subtracting the amount X2 from the amount Y2 from entering into 30 μm or less, the resin sheet 11 can be adjusted by adjusting the viscosity before curing of the resin sheet 11 or increasing the curing rate during heating. To achieve. Specifically, it can be achieved by selecting the said hardening accelerator, for example. [0087] Specifically, the conditions for the thermosetting treatment vary depending on the viscosity of the resin sheet 11, the constituent materials, and the like, but the heating temperature is preferably 100 ° C or more, and more preferably 120 ° C or more. On the other hand, the upper limit of the heating temperature is preferably 200 ° C or lower, and more preferably 180 ° C or lower. The heating time is preferably 10 minutes or more, and more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 minutes or less, and more preferably 120 minutes or less. In addition, pressure can also be applied as needed, preferably 0. Above 1MPa, more preferably 0. 5MPa or more. On the other hand, the upper limit is preferably 10 MPa or less, and more preferably 5 MPa or less. By setting the conditions of the thermosetting treatment within the above-mentioned numerical range, it is easy to make the resin flow distance from the embedding step to after the thermosetting step, that is, the value obtained by subtracting the entering amount X2 from the entering amount Y2. It is 30 μm or less. [0088] When only one SAW filter 13 as an electronic device is sealed, the sealing body 25 may be used as one hollow electronic device package. In addition, when a plurality of SAW filters 13 are collectively sealed, they are divided into a single SAW filter, so that each can be made into a hollow electronic device package. That is, as in the present embodiment, when a plurality of SAW filters 13 are collectively sealed, the following configuration may be performed. [0089] (Cutting Step) After the heat curing step, cutting of the sealing body 25 may be performed (see FIG. 6). Thereby, the hollow package 18 (hollow-type electronic device package) with the SAW wafer 13 as a unit can be obtained. A cutting tape is stuck on the outermost layer 11a side of the sealing body 25, and then cutting is performed. Since the dicing tape is adhered to the outermost layer 11a, the hollow package 18 can be easily peeled from the dicing tape after cutting. [0090] (Substrate Mounting Step) If necessary, a substrate mounting step of forming a bump on the hollow package 18 and mounting the bump on another substrate (not shown) may be performed. When the hollow package 18 is mounted on a substrate, a known device such as a flip chip bonder or a wafer bonder can be used. [0091] In the embodiment described above, the case where the hollow electronic device of the present invention is a SAW wafer 13 as a semiconductor wafer having a movable portion has been described. However, the hollow electronic device of the present invention is not limited to this example as long as it has a hollow portion between the adherend and the electronic device. For example, a semiconductor wafer having a MEMS (Micro Electro Mechanical Systems) as a movable portion such as a pressure sensor or a vibration sensor may be used. In addition, in the embodiment described above, a case where an electronic device is embedded using a resin sheet and extruded by a parallel flat plate has been described. However, the present invention is not limited to this example, and a vacuum in a vacuum state may be used. After the laminate of the electronic device and the resin sheet is sealed with a release film in the chamber, a gas at atmospheric pressure or higher is introduced into the chamber, and the electronic device is buried in the thermosetting resin sheet of the resin sheet. Specifically, the electronic device can be embedded in the thermosetting resin sheet of the resin sheet by the method described in Japanese Patent Application Laid-Open No. 2013-52424. [Examples] [0092] Hereinafter, suitable examples of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the scope of the present invention to this unless they are specifically limited. [0093] The components of the resin sheet used in the examples will be described. Epoxy resin: YSLV-80XY (bisphenol F-type epoxy resin, epoxy equivalent 200g / eq. Made by Nippon Steel Chemical Co., Ltd.) 、 Softening point 80 ℃) Phenol resin: LVR8210DL (phenol-form phenol resin, hydroxyl equivalent 104g / eq.) Manufactured by Qunrong Chemical. And softening point: 60 ° C) Thermoplastic resin A: HME-2006M (carboxyl-containing acrylate copolymer, weight average molecular weight: about 600,000, glass transition temperature (Tg): -35 ° C) manufactured by Gensangyo Corporation B: NDHB-101 (glycidyl-containing acrylate copolymer, weight-average molecular weight: about 1 million, glass transition temperature (Tg): -31 ° C) manufactured by Gensang Industrial Co., Ltd. Thermoplastic resin C: ND-77L (glycidyl-containing acrylate copolymer, weight average molecular weight: about 1.1 million, glass transition temperature (Tg): -10 ° C) Thermoplastic resin D: ND-78L (including glycidol) Acrylate copolymer, weight average molecular weight: about 1.1 million, glass transition temperature (Tg): -15 ° C) thermoplastic resin E: NDF-001 (glycidyl group-containing acrylate copolymer, Weight average molecular weight: about 500,000, glass transition temperature (Tg): 4 ° C) thermoplastic resin F: NDF-002 (glycidyl-containing acrylate copolymer) Weight-average molecular weight: about 100,000, glass transition temperature (Tg): 4 ° C) Inorganic filler A: FB-5SDC manufactured by Electrochemical Industry Co., Ltd. (average particle diameter 5 μm, without surface treatment) Inorganic filler B: Admatechs Company-made SO-25R (average particle size 0. 5 μm) Inorganic filler after surface treatment with 3-methacryloxypropyltrimethoxysilane (product name: Shin-Etsu Chemical Co., Ltd .: KBM-503). The surface treatment was performed with 1 part by weight of a silane coupling agent with respect to 100 parts by weight of the inorganic filler B. Carbon black: # 20 hardening accelerator manufactured by Mitsubishi Chemical Corporation: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co., Ltd. [0094] [Examples and Comparative Examples Production of Resin Sheet] Each component was dissolved and dispersed in methyl ethyl ketone as a solvent in accordance with the blending ratios shown in Table 1 to obtain a varnish having a concentration of 85% by weight. This varnish was applied to a silicone release-treated spacer, and then dried at 110 ° C for 5 minutes. Thus, a sheet having a thickness of 55 μm was obtained. This sheet was laminated with three upper layers and one lower layer, respectively, to produce a resin sheet having a thickness of 220 μm. In the following evaluation, the thickness of the resin sheet is preferably implemented by a thickness equal to or greater than the total of the wafer thickness and the bump height used in the following evaluation. This is because if the sheet thickness is too thin, the amount of invasion decreases, and stable evaluation cannot be performed. Therefore, in this embodiment, the "total of wafer thickness and bump height" in the following evaluation is 220 μm. [0095] (Top Surface Roughness Evaluation) FIG. 8 (a) is a schematic cross-sectional view for explaining the top surface roughness evaluation, and FIG. 8 (b) is a plan view thereof. 9 to 11 are schematic cross-sectional views for explaining the evaluation of the unevenness of the top surface. FIG. 12 is a schematic plan view for explaining the evaluation of the unevenness of the top surface. [0091] <Step A1> First, four model wafers 113 of the following pattern are prepared (see FIGS. 8 (a) and 8 (b)). [Style of model wafer] Wafer size: 3mm vertical, 3mm horizontal, 200μm thick Hollow Gap: 20μm (that is, bump height 20μm) Material: Silicon wafer Wafer: Photosensitive resin bumps are still relatively thin in recent years in electronic devices The advancement of thinning requires thinning of wafers or semiconductor packages. Therefore, the bump height formed on the surface of the wafer is required to be about 10 to 50 μm. Here, since a bump is formed on the wafer surface after the silicon wafer is ground to a predetermined thickness, if the wafer thickness is too thin, the bump cannot be efficiently formed. Therefore, in this embodiment, in consideration of the limit of the thickness of the wafer where the bumps can be formed stably, the evaluation was performed using approximately 200 μm as the wafer thickness. In addition, in order to suppress the deviation of the evaluation, the lower the bump height, the better. From this viewpoint, the bump height was evaluated at 20 μm. [0097] <Step B1> On the substrate 112 (size: 6cm in length, 10cm in width, thickness: 1. 3 mm, material: glass), the prepared model wafer 113 is arranged so that the distance W from the adjacent wafer is 300 μm (see FIGS. 8 (a) and 8 (b)). [0098] <Step C1> A resin sheet having a thickness of 220 μm produced in the above-mentioned Examples and Comparative Examples was cut into 25 mm in length and 25 mm in width as Sample 111 (see FIG. 9). [0099] <Step D1> The sample 111 is placed on the model wafer 113 (see FIG. 10). [0100] <Step E1> In a state where the spacer 110 is attached, lamination is performed by vacuum extrusion under conditions of 75 ° C. for 60 seconds and a pressure of 300 kPa (see FIG. 11). Lamination is performed by hot pressing the lower heating plate 122 and the upper heating plate 124. Then, it heated at 150 degreeC for 1 hour. After that, the spacer 110 is peeled. In this example, as a hardening accelerator, 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co., Ltd. was used, and the reaction of the product "2PHZ-PW" Since the starting temperature was around 145 ° C, the heating conditions were set to 150 ° C and 1 hour. [0101] <Step F1> The thickness of the portion of the center Y (see FIG. 12) of the sample 111 below the plane was measured with a contact surface roughness meter. The amount of depression between the wafers was determined based on the center of the wafer. A case where the thickness is 30 μm or more was evaluated as ×, and a case where the value was less than 30 μm was evaluated as ○. The results are shown in Table 1. [0102] (Evaluation of Invasion Amount During Squeezing) FIG. Figure 13 (b) is a cross-sectional schematic diagram of the intrusion amount evaluation during compression. Figures 14 to 16 are schematic cross-sectional diagrams illustrating the evaluation of the unevenness of the top surface. [0103] First, prepare the following pattern 25 model wafers 213 are mounted on a glass substrate 212 (6 cm in length, 10 cm in width, and 1. 3 mm) model wafer mounting substrate 215 (see FIGS. 13 (a) and 13 (b)). The gap width between the glass substrate 212 and the model wafer 213 is 50 μm. The distance W2 between adjacent wafers is 300 μm. [Model wafer pattern] Wafer size: 3mm in height, 3mm in width, 200μm thick Bump material: resin bump (resin material: acrylic resin) Bump height: 20μm Number of bumps: 100 bumps configuration Position: 10 vertical × 10 horizontal, 200 μm pitch. Specifically, the model wafer 213 is mounted on a glass substrate 212 under the following bonding conditions to prepare a model wafer mounting substrate 215. <Joining conditions> Apparatus: Matsushita Electric Works Co., Ltd. Joining conditions: 200 ° C, 3N, 1 second, ultrasonic output 2W [0104] <Step B2> The resin sheet having a thickness of 220 μm produced in the above examples and comparative examples was cut into 3 cm in length and 3 cm in width were used as samples 211 (see FIG. 14). [0105] <Step C2> The sample 211 is placed on the model wafer 213 of the model wafer mounting substrate 215 (see FIG. 15). [0106] <Step D2> In a state where the spacer 210 is attached, the model wafer 213 is embedded in the sample 211 under the following embedding conditions (see FIG. 16). The embedding is performed by hot pressing of the lower heating plate 222 and the upper heating plate 224. <Buried conditions> Extrusion method: Flat plate extrusion temperature: 75 ° C Pressure: 1500kPa Vacuum degree during extrusion: 1. 6 kPa extrusion time: 1 minute [0107] <Step E2> After opening to atmospheric pressure, place in a hot air dryer at 150 ° C for 1 hour. Thereby, the said sample was heat-hardened and the sealing body sample was obtained. The amount Y1 of the resin entering the sample 211 into the hollow portion between the model wafer 213 and the glass substrate 212 of the obtained sealed body sample was measured. Specifically, the amount of resin entering Y1 into the hollow portion between the model wafer 213 and the glass substrate 212 was measured using a brand name "Digital Microscope" (200 times) manufactured by KEYENCE Corporation. The resin penetration amount Y1 was measured as the maximum reach of the resin entering the hollow part from the end of the SAW wafer, and this was taken as the resin penetration amount Y1. In addition, when the hollow portion is extended beyond the SAW wafer without entering, the resin entering amount is expressed as a negative value. (In this example and the comparative example, there is no case where it is a negative value). The measurement of the penetration amount Y1 is performed on the model wafer 213-1 arranged on the outside and the model wafer 213-2 arranged on the inside. The model wafer 213-1 arranged on the outside refers to a model wafer located at each vertex of a square arranged 5 × 5. The entry amount Y1 of the model wafer 213-1 arranged on the outside is an average value of 4 wafers (in Table 1, it is expressed as an outside entry amount). The model wafer 213-2 arranged on the inside refers to: among the wafers arranged in a 5 × 5 square, the third one from the top (the third from the bottom) and the third from the left (the third from the right) Model wafer. The entry amount Y1 of the model wafer 213-2 arranged on the inside adopts the measured value of the entry amount Y1 of the one model wafer 213-2 (in Table 1, it is expressed as the inside entry amount). A case where both the inside entry amount and the outside entry amount were 20 μm or less and the difference between the inside entry amount and the outside entry amount was 30 μm or less was evaluated as 0. The case where at least one of the inside entry amount and the outside entry amount was larger than 20 μm, and the case where the difference between the inside entry amount and the outside entry amount was greater than 30 μm were evaluated as ×. [0108] <Measurement of Glass Transition Temperature Tg before Curing of the Whole Sheet> The glass transition temperature Tg is measured by a loss tangent (tan δ) measured using a dynamic viscoelasticity measuring device (DMA, frequency 1 Hz, heating rate 10 ° C./min) To get the maximum value. Dynamic viscoelasticity measuring device (DMA): trade name "RSAG2", TA Instruments company mode: tensile mode heating rate: 10 ° C / min frequency: 1Hz sample thickness: 260μm distance between chucks: 20mm strain: 0. 1% measurement temperature range: -50 ℃ ~ 100 ℃ [0109]

[0110][0110]

11‧‧‧電子裝置密封用樹脂薄片(樹脂薄片)11‧‧‧Resin sheet (resin sheet) for electronic device sealing

13‧‧‧SAW濾波器(電子裝置)13‧‧‧SAW filter (electronic device)

14‧‧‧中空部14‧‧‧ Hollow

15‧‧‧層合體15‧‧‧ laminated

18‧‧‧中空型電子裝置封裝體18‧‧‧ hollow electronic device package

25‧‧‧密封體25‧‧‧Sealed body

[0021]   [圖1] 係本實施方式的樹脂薄片的剖面示意圖。   [圖2] 係用於說明本實施方式的電子裝置封裝體的製造方法的剖面示意圖。   [圖3] 係用於說明本實施方式的電子裝置封裝體的製造方法的剖面示意圖。   [圖4] 係用於說明本實施方式的電子裝置封裝體的製造方法的剖面示意圖。   [圖5] 係用說明本實施方式的電子裝置封裝體的製造方法的剖面示意圖。   [圖6] 係用於說明本實施方式的電子裝置封裝體的製造方法的剖面示意圖。   [圖7] 係用於說明進入量X2的剖面部分放大圖。   [圖8] 中,(a)為用於說明頂面凹凸評估的剖面示意圖,(b)為其平面平面圖。   [圖9] 係用於說明頂面凹凸評估的剖面示意圖。   [圖10] 係用於說明頂面凹凸評估的剖面示意圖。   [圖11] 係用於說明頂面凹凸評估的剖面示意圖。   [圖12] 係用於說明頂面凹凸評估的剖面示意圖。   [圖13] 中,(a)為用於說明擠壓時侵入量評估的剖面示意圖,(b)為其平面平面圖。   [圖14] 係用於說明擠壓時侵入量評估的剖面示意圖。   [圖15] 係用於說明擠壓時侵入量評估的剖面示意圖。   [圖16] 係用於說明擠壓時侵入量評估的剖面示意圖。[0021] FIG. 1 is a schematic cross-sectional view of a resin sheet according to this embodiment. [FIG. 2] A schematic cross-sectional view for explaining a method for manufacturing an electronic device package according to this embodiment. [FIG. 3] It is a schematic cross-sectional view for explaining the manufacturing method of the electronic device package of this embodiment. [FIG. 4] A schematic cross-sectional view for explaining a method for manufacturing an electronic device package according to this embodiment. [FIG. 5] A schematic cross-sectional view illustrating a method for manufacturing an electronic device package according to this embodiment. [FIG. 6] It is a schematic cross-sectional view for explaining the manufacturing method of the electronic device package of this embodiment. [Fig. 7] is an enlarged view of a cross-sectional part for explaining the approach amount X2. [Fig. 8], (a) is a schematic cross-sectional diagram for explaining the evaluation of the unevenness of the top surface, and (b) is a plan view of the plane. [Fig. 9] is a schematic cross-sectional view for explaining the bump evaluation of the top surface. [Fig. 10] is a schematic cross-sectional view for explaining the bump evaluation of the top surface. [Fig. 11] is a schematic cross-sectional view for explaining the bump evaluation of the top surface. [Fig. 12] is a schematic cross-sectional view for explaining the bump evaluation of the top surface. In [Fig. 13], (a) is a schematic cross-sectional diagram for explaining the evaluation of the amount of intrusion during compression, and (b) is a plan view of the plane. [Fig. 14] is a schematic cross-sectional view for explaining the evaluation of the amount of invasion during extrusion. [Fig. 15] is a schematic cross-sectional view for explaining the evaluation of the amount of invasion during extrusion. [Fig. 16] is a schematic cross-sectional view for explaining the evaluation of the amount of invasion during extrusion.

Claims (5)

一種樹脂薄片,其特徵具有最外層與最內層,   前述最外層包含無機填充劑與熱可塑性樹脂,   前述無機填充劑的含量相對於前述最外層全體為85重量%以上,   前述熱可塑性樹脂的含量相對於前述最外層的樹脂成分全體為15重量%以下,   前述最內層包含重量平均分子量為80萬以上的含官能基的熱可塑性樹脂,   前述含官能基的熱可塑性樹脂的含量相對於前述最內層的樹脂成分全體為90重量%以上。A resin sheet having an outermost layer and an innermost layer. The outermost layer includes an inorganic filler and a thermoplastic resin. , The content of the inorganic filler is 85% by weight or more relative to the entire outermost layer. The content of the thermoplastic resin. It is 15% by weight or less based on the total resin component of the outermost layer. The innermost layer contains a functional group-containing thermoplastic resin having a weight average molecular weight of 800,000 or more. The content of the functional group-containing thermoplastic resin relative to the aforementioned The total resin component of the inner layer is 90% by weight or more. 如請求項1之樹脂薄片,其中,前述含官能基之熱可塑性樹脂為含縮水甘油基之丙烯酸系樹脂。The resin sheet according to claim 1, wherein the functional group-containing thermoplastic resin is a glycidyl group-containing acrylic resin. 如請求項1之樹脂薄片,其中,前述最內層包含作為硬化性成分之酚樹脂,   前述酚樹脂的含量相對於前述含官能基之熱可塑性樹脂的當量比為0.8~2.0的範圍內。The resin sheet according to claim 1, wherein the innermost layer contains a phenol resin as a hardening component, and the content ratio of the phenol resin to the functional group-containing thermoplastic resin is in a range of 0.8 to 2.0. 如請求項1之樹脂薄片,其中,在測定樹脂薄片全體的硬化前的玻璃轉移溫度Tg時,在0℃以下存在至少1個玻璃轉移溫度Tg。The resin sheet according to claim 1, wherein when the glass transition temperature Tg of the entire resin sheet before curing is measured, at least one glass transition temperature Tg exists at 0 ° C or lower. 如1~4中任一項之樹脂薄片,其中,前述最內層不包含無機填充劑、或包含相對於前述最內層全體為1重量%以下的無機填充劑。The resin sheet according to any one of 1 to 4, wherein the innermost layer does not include an inorganic filler or contains an inorganic filler in an amount of 1% by weight or less based on the entirety of the innermost layer.
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