TW201835180A - Resin sheet - Google Patents

Abstract

It is an object of the present invention to provide a resin sheet which can achieve the arrival of a resin to the end of a hollow type electronic device during embedding for the hollow type electronic device, and can prevent the resin from being largely moved in a hollow part during heat curing. A resin sheet contains an inorganic filler. The inorganic filler has a particle diameter of 0.5[mu]m or more and 45[mu]m or less . The specific surface area of 50% by weight or more of the inorganic filler is 2.0 m2/g to 4.5 m2/g.

Description

Resin sheet

[0001] The present invention relates to a resin sheet.

[0002] Conventionally, when a hollow electronic device having a hollow structure between an electronic device and a substrate is resin-sealed to produce a hollow electronic device package, a sheet-shaped sealing resin is sometimes used as the sealing resin (for example, refer to a patent) Document 1, Patent Document 2). [0003] As a method of manufacturing the package, a sheet-shaped sealing resin is disposed on one or more electronic devices disposed on an adherend, and then the electronic device and the sheet-shaped sealing resin are brought closer A method of compressing an electronic device into a sheet-shaped sealing resin by pressing it in a direction such that the sheet-shaped sealing resin is thermally hardened. [Prior Art Literature] [Patent Literature] [0004] [Patent Literature 1] Japanese Patent Laid-Open No. 2006-19714 [Patent Literature 2] Japanese Patent Laid-Open No. 2014-189790

[Problems to be Solved by the Invention] [0005] When the hollow electronic device is sealed by the method described above, it is necessary to maintain the hollow state at the time after the sealing resin is hardened without causing the resin to enter the hollow type in a large amount. Hollow part of electronic device. [0006] As a method of maintaining a hollow state, it is necessary to make the resin reach the end of the hollow electronic device when the hollow electronic device is buried, and not to cause the resin to move significantly within the hollow portion when it is thermally hardened. [0007] When the hollow electronic device is embedded, in order for the resin to reach the end of the hollow electronic device, the sealing resin needs to have high fluidity at the temperature during the embedding. On the other hand, in order to prevent the resin from largely moving in the hollow portion during thermal curing, it is necessary to reduce the flowability of the sealing resin during thermal curing. [0008] Conventionally, in order to improve the fluidity of a sealing resin, a method of densely filling an inorganic filler has been used in many cases. For example, a method may be adopted in which the inorganic filler is densely packed by containing a fine powder inorganic filler having a small particle size in an optimal ratio in the main inorganic filler. In addition, from the viewpoint of ensuring the reliability of the manufactured hollow electronic device package, a method of densely filling an inorganic filler having a low coefficient of thermal expansion (CTE) may be employed. [0009] However, when the inorganic filler is designed to be densely packed, the minimum melt viscosity may be excessively reduced. For this reason, there is a risk that the flow amount of the resin during thermosetting becomes large and enters the hollow portion in a large amount. [0010] The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a resin that can reach an end portion of a hollow electronic device when the hollow electronic device is embedded, and can also prevent the resin from being significantly enlarged in the hollow portion when being thermally cured. Moving resin sheet. [Means for Solving the Problems] [0011] The inventors of the present application have studied a resin sheet in order to solve the above-mentioned conventional problems. As a result, it was found that by adopting the following structure, the resin can reach the end of the hollow electronic device when the hollow electronic device is buried, and the resin can not be greatly moved in the hollow portion during thermal curing, thereby completing the present invention. invention. [0012] That is, the resin sheet of the present invention includes an inorganic filler, and the particle diameter of the inorganic filler is in a range of 0.5 μm or more and 45 μm or less. The inorganic filler is 50% of the total inorganic filler. wt% inorganic filler specific surface area in the range of 2.0m ² /g~4.5m ² / g of. [0013] According to the foregoing configuration, the inorganic filler is included, and a particle diameter of the inorganic filler is in a range of 0.5 μm or more and 45 μm or less. That is, the inorganic filler includes only inorganic fillers having a particle diameter in a range of 0.5 μm to 45 μm, and does not include inorganic fillers having a particle diameter of less than 0.5 μm or inorganic fillers having a particle diameter of more than 45 μm. Therefore, the inorganic filler is not densely filled. As a result, the resin can reach the end of the hollow electronic device when the hollow electronic device is buried, and the resin can not be greatly moved in the hollow portion by, for example, controlling the minimum melt viscosity during heat curing. . In addition, since an inorganic filler having a particle diameter of less than 0.5 μm is not included, excessive reduction in viscosity can be suppressed. In addition, since the inorganic filler having a particle diameter of more than 45 μm is not included, the end of the hollow electronic device is less likely to be blocked by the inorganic filler having a particle diameter of the bump height or more. Therefore, it is possible to prevent only the resin component from flowing into the hollow portion. As a result, it is possible to suppress the resin from excessively entering the hollow portion. In addition, since the specific surface area of the inorganic filler of 50% by weight or more of the entire inorganic filler is 2.0 m ² / g or more, it is possible to obtain a viscosity capable of filling the end portion of the electronic device for a hollow with a resin. In addition, variations in the viscosity of the resin can be suppressed, and a stable resin can be obtained. On the other hand, since the specific surface area of 50% by weight or more of the inorganic fillers in all the inorganic fillers is 4.5 m ² / g or less, it is possible to obtain a viscosity capable of filling the resin at least to the ends of the hollow electronic device after curing. Of resin. [0014] In the aforementioned configuration, the content of the inorganic filler is preferably 75% by weight or more with respect to the entire resin sheet. [0015] When the content of the inorganic filler is 75% by weight or more with respect to the entire resin sheet, the effect of setting the particle diameter of the inorganic filler within a range of 0.5 μm to 45 μm can be increased. Therefore, it is more suitable for the resin to reach the end of the hollow electronic device when the hollow electronic device is buried, and it is more suitable not to cause the resin to move largely within the hollow portion during the thermosetting. [0016] In the aforementioned configuration, the melt viscosity η at 90 ° C. is preferably 100,000 Pa · s or more and 350,000 Pa · s or less. [0017] When the melt viscosity η at 90 ° C. is 100,000 Pa · s or more, the amount of entry can be suppressed from becoming excessive. On the other hand, if the melt viscosity η at 90 ° C. is 350,000 Pa · s or less, the resin can be filled at least to the end of the hollow electronic device after thermal curing.

[Best Mode for Carrying Out the Invention] [0019] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to these embodiments. [0020] (Resin Sheet for Sealing Electronic Device) FIG. 1 is a schematic cross-sectional view of a resin sheet (resin sheet) for sealing an electronic device according to this embodiment. As shown in FIG. 1, a resin sheet 11 for sealing electronic devices (hereinafter also referred to as “resin sheet 11”) is typically laminated on a spacer 11 a such as a polyethylene terephthalate (PET) film. Status to provide. In order to facilitate the peeling of the resin sheet 11, the spacer 11 a may be subjected to a release treatment. [0021] In this embodiment, a case where spacers are laminated only on one side of the resin sheet will be described. However, the present invention is not limited to this example, and the spacers may be laminated on both sides of the resin sheet. Pieces. In this case, the spacer may be peeled off and used immediately before use. In the present invention, the resin sheet may be provided as a monomer of the resin sheet without being laminated on the spacer. In addition, other layers may be laminated on the resin sheet within a range not departing from the intention of the present invention. [0022] The resin sheet of the present invention can be suitably used as a resin sheet for sealing an electronic device for hollow sealing. Regarding the resin sheet 11, the advancement amount Y1 measured by the procedures of the following steps A to G is preferably 0 μm or more and 80 μm or less. The above-mentioned entering amount Y1 is more preferably 0 μm or more and 70 μm or less, and still more preferably 0 μm or more and 50 μm or less. [0023] Step A: prepare a model wafer mounting substrate in which a model wafer of the following pattern is mounted on a glass substrate via a resin bump; step B: prepare a resin sheet having a size of 1 cm in length, 1 cm in width, and a thickness of 220 μm Step C: The aforementioned sample is arranged on the aforementioned model wafer of the aforementioned model wafer mounting substrate; Step D: The aforementioned model wafer is buried in the aforementioned sample under the following embedding conditions Step E: After the aforementioned step D, Measure the amount X1 of resin entering the hollow portion between the model wafer and the glass substrate and constitute the sample; Step F: After step E, place in a hot air dryer at 150 ° C for 1 hour. The sample is thermally hardened to obtain a sealed body sample; and step G: measuring the amount of penetration Y1 of the resin into the hollow portion in the sealed body sample. <Form of Model Wafer> The wafer size was 3 mm in length, 3 mm in width, and 200 μm thick, and a resin bump having a height of 20 μm was formed. <Buried conditions> Extrusion method: Flat plate extrusion temperature: 65 ° C Pressure: 0.1MPa Vacuum degree: 1.6kPa Extrusion time: 1 minute still, if the temperature of the embedding conditions is too low, the glass substrate is adhered The amount of intrusion X1 cannot be clearly measured (the gap around the wafer is large). On the other hand, if the temperature of the embedding conditions is too high, the reaction starts during hot pressing, and the amount of invasion may vary (reproducibility). (Lower), and operability is also lowered, so it is set to 65 ° C. In addition, from the viewpoints of breakage of the wafer and adhesiveness to the glass substrate, the pressure was set to 0.1 MPa. [0024] Hereinafter, a method of determining the amount of entry X1 and a value obtained by subtracting the amount of entry X1 from the amount of entry Y1 will be described. [0025] FIGS. 2 to 5 are schematic cross-sectional views for explaining a procedure for measuring the entry amount X1 and the entry amount Y1. FIG. 6 is a partially enlarged view of FIG. 5. [0026] (Step A) In step A, as shown in FIG. 2, a model wafer mounting substrate 115 is prepared after one model wafer 113 is mounted on a glass substrate 112 via a resin bump 113 a. The pattern of the model wafer 113 is as follows. More specifically, the model wafer mounting substrate 115 is prepared by the method described in the embodiment. <Style of Model Wafer 113> The wafer size is 3 mm in length, 3 mm in width, 200 μm in thickness, and a resin bump 113a having a height of 20 μm is formed. [0027] (Step B) In step B, as shown in FIG. 3, a sample 111 having a size of 1 cm in length, 1 cm in width, and a thickness of 220 μm is prepared. Sample 111 is a sample made of the same material as resin sheet 11 and having a size of 1 cm in length, 1 cm in width, and a thickness of 220 μm. In this embodiment, a case where the sample 111 is laminated on the spacer 111a will be described. The sample 111 can be produced, for example, by first preparing a sealing sheet 11 having a length of 10 cm or more, 10 cm or more, and a thickness of 220 μm, and then cutting it into a size of 1 cm in length, 1 cm in width, and 220 μm in thickness. It is not necessary to make the resin sheet 11 itself 1 cm long, 1 cm wide, and 220 μm thick. [0028] (Step C) In step C, as shown in FIG. 4, the sample 111 is arranged on the model wafer 113 of the model wafer mounting substrate 115. For example, the model wafer mounting substrate 115 is placed on the lower heating plate 122 with the face to which the model wafer 113 is fixed facing upward, and the sample 111 is placed on the model wafer 113 surface. In this step, the model wafer mounting substrate 115 may be first disposed on the lower heating plate 122, and then the sample 111 is disposed on the model wafer mounting substrate 115. Alternatively, the sample 111 may be laminated on the model wafer mounting substrate 115 first, and then, A laminate in which the model wafer mounting substrate 115 and the sample 111 are laminated is disposed on the lower heating plate 122. [0029] (Step D) In step D subsequent to step C, as shown in FIG. 5, the model wafer 113 is embedded in the sample 111 under the following embedding conditions. Specifically, under the embedding conditions described below, the lower side heating plate 122 and the upper side heating plate 124 included in the plate pressing are hot-pressed to embed the model wafer 113 in the sample 111. Thereafter, it was left to stand at atmospheric pressure and normal temperature (25 ° C). The storage time is set within 24 hours. <Buried conditions> Extrusion method: Flat plate extrusion temperature: 65 ° C Pressure: 0.1MPa Vacuum degree: 1.6kPa Extrusion time: 1 minute [0030] (Step E) In step E after step D, The amount X1 of the resin constituting the sample 111 into the hollow portion 114 between the model wafer 113 and the glass substrate 112 was measured (see FIG. 6). The penetration amount X1 is the maximum reach distance of the resin entering the hollow portion 114 from the end of the model wafer 113. [0031] (Step F) After the above step E, the structure in which the model wafer 113 is embedded in the sample 111 is left in a hot air dryer at 150 ° C. for 1 hour to heat harden the sample 111 to obtain a sealed body sample. [0032] (Step G) After the step F, the amount of penetration Y1 of the resin into the hollow portion 114 of the sealed body sample is measured. The amount of penetration Y1 is the maximum reach of the resin that has entered the hollow portion 114 from the end of the model wafer 113. [0033] Thereafter, a value obtained by subtracting the amount of entry X1 from the amount of entry Y1 is determined. [0034] Based on the above, a method of determining the amount of entry X1 and a value obtained by subtracting the amount of entry X1 from the amount of entry Y1 will be described. [0035] As described above, the above-mentioned entering amount Y1 of the resin sheet 11 is 0 μm or more and 80 μm or less. In the hollow electronic device package, the working surfaces formed on the bumps and the electronic device are often provided on the inner side of the hollow portion from the end of the electronic device in a direction of 100 μm or more. Therefore, when the above-mentioned entrance amount Y1 is 80 μm or less, it can reliably function as a hollow electronic device package. [0036] The value obtained by subtracting the above-mentioned entry amount X1 from the above-mentioned entry amount Y1, that is, (Y1-X1) is preferably 80 μm or less, and more preferably 50 μm or less. [0037] If the value obtained by subtracting the above-mentioned entry amount X1 from the above-mentioned entry amount Y1 is 80 μm or less, the resin in the hollow portion when the resin sheet is thermally hardened during the production of the actual hollow electronic device package can be suppressed. Flow. [0038] The amount X1 of entry is preferably 10 μm or more and 70 μm or less, and more preferably 0 μm or more and 50 μm or less. [0039] If the amount of entry X1 is greater than or equal to 0 μm and less than or equal to 70 μm, in the actual manufacturing of a hollow electronic device package, when the electronic device is embedded in the resin sheet 11, the resin can be appropriately entered into the electronic device and adhered. Hollow between objects. The reason why the amount of entry Y1, the amount of entry X1, and the value obtained by subtracting the amount of entry X1 from the amount of entry Y1 to evaluate the physical properties of the resin sheet 11 is to evaluate the actual hollow electronic device under the conditions assumed The manufacturing of the package is evaluated. However, the conditions for these evaluations are, of course, sometimes different from the actual manufacturing conditions of the hollow electronic device package. [0040] The melt viscosity η of the resin sheet 11 at 90 ° C. is preferably 100,000 Pa · s or more and 350,000 Pa · s or less, more preferably 125,000 Pa · s or more and 325,000 Pa · s or less, and still more preferably 150,000 Pa · s or more and 300,000 Pa · s or less. [0041] When the melt viscosity η at 90 ° C. is 100,000 Pa · s or more, the amount of entry can be suppressed from becoming excessive. On the other hand, if the melt viscosity η at 90 ° C. is 350,000 Pa · s or less, it is possible to fill the resin at least to the end of the hollow electronic device after thermosetting. Examples of the method for controlling the melt viscosity η of the resin sheet 11 at 90 ° C. include a method of controlling the particle diameter or content of the following inorganic filler, a method of controlling the type or content of a thermoplastic resin, A method for controlling the stirring conditions when forming the varnish or the kneaded product of the resin sheet 11 and the like. [0042] The resin sheet 11 includes an inorganic filler, and the particle diameter of the inorganic filler is in a range of 0.5 μm or more and 45 μm or less. The particle diameter is preferably in a range of 0.6 μm or more and 40 μm or less, and more preferably in a range of 0.7 μm or more and 38 μm or less. That is, the inorganic filler includes an inorganic filler having a particle diameter within a predetermined range, and does not include an inorganic filler having a smaller particle diameter or an inorganic filler having a larger particle diameter. Therefore, the inorganic filler is not densely filled. As a result, the resin can reach the end of the hollow electronic device when the hollow electronic device is buried, and the resin can not be greatly moved in the hollow portion by, for example, controlling the minimum melt viscosity during heat curing. . In addition, since no inorganic filler smaller than a predetermined particle diameter is contained, excessive reduction in viscosity can be suppressed. In addition, since an inorganic filler having a particle diameter larger than a predetermined diameter is not included, the end of the hollow electronic device is less likely to be blocked by the inorganic filler having a particle diameter of a bump height or more. Therefore, it is possible to prevent only the resin component from flowing into the hollow portion. As a result, it is possible to suppress the resin from excessively entering the hollow portion. Examples of a method for obtaining an inorganic filler having a particle diameter in a range of 0.5 μm to 45 μm include a method of classifying a commercially available inorganic filler, removing the inorganic filler having a particle diameter outside a predetermined range, and preparing the inorganic filler. Only inorganic fillers with a particle size within the specified range. [0043] The inorganic filler is not particularly limited, and various conventionally known fillers can be used, and examples thereof include quartz glass, talc, silica (fused silica, crystalline silica, etc.), alumina, and nitrogen. Powder of aluminum, silicon nitride and boron nitride. These can be used alone or in combination of two or more. Among them, for the reason that the linear expansion coefficient can be reduced well, silicon dioxide and alumina are preferred, and silicon dioxide is more preferred. [0044] As the silicon dioxide, a silicon dioxide powder is preferable, and a fused silicon dioxide powder is more preferable. Examples of the fused silica powder include spherical fused silica powder and crushed fused silica powder. However, from the viewpoint of fluidity, spherical fused silica powder is preferred. [0045] The content of the inorganic filler is preferably 75% by weight or more, and more preferably 80% by weight or more, with respect to the resin sheet 11 as a whole. [0046] When the content of the inorganic filler is 75% by weight or more with respect to the entire resin sheet 11, the effect of setting the particle diameter of the inorganic filler within a predetermined range can be increased. Therefore, it is more suitable for the resin to reach the end of the hollow electronic device when the hollow electronic device is buried, and it is more suitable not to cause the resin to largely move in the hollow portion during the thermosetting. [0047] The shape of the inorganic filler is not particularly limited, and may be any shape such as a spherical shape (including an ellipsoid shape), a polyhedron shape, a polygonal column shape, a flat shape, and an indefinite shape. From the viewpoint of achieving a high filling state and moderate fluidity, a spherical shape is preferred. [0048] Specifically, the particle size or particle size distribution of the inorganic filler contained in the resin sheet 11 is obtained by the following method. (a) Put the resin sheet 11 into a crucible, and heat it strongly at 700 ° C. for 2 hours in the atmosphere to ash it. (b) Disperse the obtained ash into pure water, perform ultrasonic treatment for 10 minutes, and use a laser diffraction scattering particle size distribution measuring device (manufactured by Beckman Coulter, "LS 13 320"; wet method) to determine the particle size. Distribution (volume basis). The composition of the resin sheet 11 is an organic component other than the inorganic filler. Actually, all of the organic components are burned through the above-mentioned intense heat treatment. Therefore, the obtained ash is regarded as an inorganic filler and measured. However, the calculation of the average particle diameter can also be performed simultaneously with the particle size distribution. [0049] The inorganic filler of the resin sheet 11 is preferably surface-treated with a silane coupling agent in advance. [0050] The silane coupling agent is not particularly limited as long as the silane coupling agent has a methacrylic acid group or an acrylic acid group and can be surface-treated with an inorganic filler. Specific examples of the silane coupling agent include 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and 3-methacryl Ethoxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, methacryloxyoctyltrimethoxysilane, methacryloxyoctyl Triethoxysilane. Among these, from the viewpoints of reactivity and cost, 3-methacryloxypropyltrimethoxysilane is preferred. [0051] In the case where the resin sheet 11 contains an inorganic filler that has been surface-treated with a compound having a methacryloxy group or acryloxyl group in advance as a silane coupling agent, 100 parts by weight of the inorganic filler, Preferably, the inorganic filler is surface-treated with a silane coupling agent in an amount of 0.5 to 2 parts by weight. When the surface treatment of the inorganic filler is performed using a silane coupling agent, the viscosity of the resin sheet 11 can be suppressed from becoming too large. [0052] Regarding the inorganic filler, a specific surface area of 50% by weight or more of the inorganic filler in the total inorganic filler is 2.0 m ² /g~4.5m ² / g, preferably 2.1m ² /g~4.3m ² / g. Since the specific surface area of more than 50% by weight of the inorganic filler in all the inorganic fillers is 2.0m ² / g or more, it is possible to obtain a viscosity at which the resin can be filled in the end portion of the hollow electronic device. In addition, variations in the viscosity of the resin can be suppressed, and a stable resin can be obtained. On the other hand, the specific surface area of 50% by weight or more of the inorganic filler is 4.5m. ² / g or less, a resin capable of filling the resin with a viscosity at least to the end of the hollow electronic device after curing can be obtained. The method for measuring the specific surface area of the inorganic filler is based on the method described in the examples. [0053] The resin sheet 11 preferably contains an epoxy resin and a phenol resin. Thereby, good thermosetting properties are obtained. [0054] The epoxy resin is not particularly limited. For example, triphenylmethane epoxy resin, cresol novolac epoxy resin, biphenyl epoxy resin, modified bisphenol A epoxy resin, bisphenol A epoxy resin, and bisphenol F epoxy resin can be used. Various epoxy resins, such as epoxy resin, modified bisphenol F epoxy resin, dicyclopentadiene epoxy resin, phenol novolac epoxy resin, and phenoxy resin. These epoxy resins may be used alone or in combination of two or more. [0055] From the viewpoint of ensuring the toughness and the reactivity of the epoxy resin after hardening, it is preferred that the ring is a solid ring at a normal temperature of 150 to 250, a softening point, or a melting point of 50 to 130 ° C. Among the oxygen resins, bisphenol F-type epoxy resin, bisphenol A-type epoxy resin, biphenyl-type epoxy resin and the like are more preferable from the viewpoint of moldability and reliability. [0056] The phenol resin is not particularly limited as long as it is a phenol resin that undergoes a curing reaction with the epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a biphenylaralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolac resin, a resol novolac resin, and the like can be used. These phenol resins may be used alone or in combination of two or more. [0057] As the phenol resin, a resin having a hydroxyl equivalent of 70 to 250 and a softening point of 50 to 110 ° C. is preferably used from the viewpoint of reactivity with epoxy resin. Among them, from the viewpoint of high curing reactivity and low cost From the standpoint, a phenol novolac resin can be suitably used. In addition, from the viewpoint of reliability, a low-hygroscopicity phenol resin such as a phenol aralkyl resin or a biphenyl aralkyl resin can also be suitably used. [0058] With regard to the blending ratio of the epoxy resin and the phenol resin, from the viewpoint of curing reactivity, it is preferable that the total of the hydroxyl groups in the phenol resin is 0.7 to 1 equivalent to the epoxy group in the epoxy resin. Blending is performed in a manner of 1.5 equivalents, and more preferably 0.9 to 1.2 equivalents. [0059] The lower limit of the total content of the epoxy resin and the phenol resin in the resin sheet 11 is preferably 5.0% by weight or more, and more preferably 7.0% by weight or more. When it is 5.0% by weight or more, the adhesive force to electronic devices, substrates, and the like is well obtained. On the other hand, the upper limit of the total content is preferably 25% by weight or less, and more preferably 20% by weight or less. If it is 25% by weight or less, the hygroscopicity of the resin sheet can be reduced. [0060] The resin sheet 11 preferably contains a thermoplastic resin. Thereby, the heat resistance, flexibility, and strength of the obtained resin sheet can be improved. [0061] Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, neoprene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polymer Butadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT , Polyamidoamine imine resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. These thermoplastic resins may be used alone or in combination of two or more. Among these, an acrylic resin is preferable from the viewpoints that flexibility is easily obtained and dispersibility with an epoxy resin is good. [0062] The acrylic resin is not particularly limited, and examples thereof include 1 of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Polymers (acrylic copolymers) having one or two or more components as components. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tert-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2- Ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, stearyl Or eicosyl and the like. [0063] The glass transition temperature (Tg) of the acrylic resin is preferably 50 ° C or lower, more preferably -70 to 20 ° C, and even more preferably -50 to 0 ° C. When the glass transition temperature is 50 ° C or lower, the sheet can be made flexible. [0064] Among the above acrylic resins, resins having a weight average molecular weight of 50,000 or more are preferred, resins having a weight average molecular weight of 100,000 to 2 million are more preferred, and resins having a weight average molecular weight of 300,000 to 1.6 million are more preferred. Resin. If it is in the said numerical range, the viscosity and flexibility of the resin sheet 11 can be improved further. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated by polystyrene conversion. [0065] The other monomers forming the polymer are not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, and Fumar. Various carboxyl-containing monomers such as acids or crotonic acid; various anhydride monomers such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (methyl ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylaurate (meth) acrylate Ester or (4-hydroxymethylcyclohexyl) -methacrylate and various hydroxyl-containing monomers; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropyl Sulfonic acid group-containing monomers such as sulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, or (meth) acryloxynaphthalenesulfonic acid; or 2-hydroxyethyl Various phosphate-containing monomers, such as acryl phosphonium phosphate. Among these, at least one of a monomer containing a carboxyl group, a monomer containing a glycidyl group (epoxy group), and a monomer containing a hydroxyl group is preferred from the viewpoint of reacting with an epoxy resin to increase the viscosity of a resin sheet. . [0066] The content of the thermoplastic resin in the resin sheet 11 is preferably 0.5% by weight or more, and more preferably 1.0% by weight or more. When the content is 0.5% by weight or more, flexibility and flexibility of the resin sheet can be obtained. The content of the thermoplastic resin in the resin sheet 11 is preferably 10% by weight or less, and more preferably 5% by weight or less. When it is 10% by weight or less, the adhesiveness of the resin sheet to the electronic device and the substrate is good. [0067] The resin sheet 11 preferably contains a hardening accelerator. [0068] The hardening accelerator is not particularly limited as long as it is a hardening accelerator that hardens the epoxy resin and the phenol resin, and examples thereof include organics such as triphenylphosphine and tetraphenylboron tetraphenylphosphine. Phosphorus compounds; Imidazole compounds such as 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole; etc. Among these, an imidazole-based compound is preferred from the reason that the reactivity is good and the Tg of the cured product is likely to increase. Among the imidazole-based compounds, 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferred because the viscosity can be increased during thermal curing. [0069] The content of the hardening accelerator is preferably 0.1 to 5 parts by weight based on 100 parts by weight of the total of the epoxy resin and the phenol resin. [0070] The resin sheet 11 may contain a flame retardant component as necessary. As a result, it is possible to reduce the expansion of combustion during a fire due to a short circuit or heat generation of a component. As the flame retardant component, for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite metal hydroxide; and a phosphazene flame retardant Wait. [0071] The resin sheet 11 preferably contains a pigment. The pigment is not particularly limited, and examples thereof include carbon black. [0072] The content of the pigment in the resin sheet 11 is preferably 0.1 to 2% by weight. When it is 0.1% by weight or more, good marking properties are obtained. If it is 2% by weight or less, the strength of the cured resin sheet can be secured. [0073] In addition to the above components, other additives may be appropriately blended in the resin composition as necessary. [0074] The thickness of the resin sheet 11 is not particularly limited, and is, for example, 100 to 2000 μm. If it is in the said range, an electronic device can be sealed well. [0075] The resin sheet 11 may have a single-layer structure or a multilayer structure in which two or more resin sheets are laminated. [Manufacturing Method of Resin Sheet] The resin sheet 11 can be formed by dissolving and dispersing a resin or the like used to form the resin sheet 11 in an appropriate solvent and adjusting the varnish so as to have a predetermined thickness on the spacer. After applying the varnish on 11a to form a coating film, the coating film is dried under predetermined conditions. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are performed, for example, in a range of a drying temperature of 70 to 160 ° C and a drying time of 1 to 30 minutes. Alternatively, as another method, after the varnish is applied on a support to form a coating film, the coating film is dried under the above-mentioned drying conditions to form a resin sheet 11. After that, when the resin sheet 11 is bonded to the spacer 11a together with the support, particularly when the resin sheet 11 includes a thermoplastic resin (acrylic resin), an epoxy resin, or a phenol resin, all these resins are dissolved in After the solvent, coating and drying are performed. Examples of the solvent include methyl ethyl ketone, ethyl acetate, and toluene. The resin sheet 11 can be produced by kneading and extrusion. As a method for manufacturing by kneading and extrusion, for example, each component for forming the resin sheet 11 is melt-kneaded by a known kneading machine such as a kneading roll, a pressure kneader, and an extruder. In order to prepare a kneaded product, a method of plasticizing the obtained kneaded product to form a sheet, and the like. Specifically, the resin sheet can be formed by directly performing extrusion molding at a high temperature without cooling the kneaded material after the melt-kneading. The extrusion method is not particularly limited, and examples thereof include a T-die extrusion method, a roll calender method, a roll kneading method, a coextrusion method, and a calendering method. The extrusion temperature is preferably above the softening point of each of the above components. In consideration of the thermosetting properties and moldability of the epoxy resin, it is, for example, 40 to 150 ° C, preferably 50 to 140 ° C, and more preferably 70. ~ 120 ° C. In the above manner, the resin sheet 11 can be formed. [0077] [Manufacturing method of hollow electronic device package] The manufacturing method of the hollow electronic device package according to this embodiment includes at least: a step of preparing a laminate for fixing an electronic device to an adherend via a bump; preparing A resin sheet step; a step of disposing the resin sheet on the electronic device of the laminate; a step of embedding the electronic device into the resin sheet by hot pressing; and after the embedding step, heating the resin sheet A step of hardening to obtain a sealed body. [0078] The adherend is not particularly limited, and examples thereof include a LTCC (Low Temperature Co-fired Ceramics) substrate, a printed wiring substrate, a ceramic substrate, a silicon substrate, and a metal substrate. In this embodiment, the SAW wafer 13 mounted on the printed wiring board 12 is hollow-sealed with the resin sheet 11 to produce a hollow electronic device package. The SAW chip 13 refers to a wafer having a SAW (Surface Acoustic Wave) filter. That is, in this embodiment, a case where the electronic device of the present invention is a wafer having a SAW (Surface Acoustic Wave) filter will be described. 7 to 11 are schematic cross-sectional views for explaining a method for manufacturing a hollow electronic device package according to this embodiment. [Step of Preparing Laminate] In the method of manufacturing a hollow package according to this embodiment, first, a laminate 15 (refer to FIG. 13) in which a plurality of SAW chips 13 (SAW filters 13) are mounted on a printed wiring board 12 is prepared (see Figure 7). The SAW wafer 13 can be formed by slicing a piezoelectric crystal having a predetermined comb electrode formed thereon by a known method and singulating the piezoelectric crystal. When mounting the SAW wafer 13 on the printed wiring board 12, a known device such as a flip chip bonder or a wafer bonder can be used. The SAW wafer 13 and the printed wiring board 12 are electrically connected via a bump 13a. In addition, a hollow portion 14 is maintained between the SAW wafer 13 and the printed wiring board 12 without hindering the propagation of the surface elastic wave on the surface of the SAW filter. The distance (the width of the hollow portion) between the SAW wafer 13 and the printed wiring board 12 can be appropriately set, and is usually about 10 to 100 μm. [0081] (Step of Preparing Resin Sheet) In the method for manufacturing a hollow electronic device package according to the present embodiment, a resin sheet 11 is prepared (see FIG. 1). [0082] (Step of Arranging Resin Sheet) Next, as shown in FIG. 8, the laminated body 15 is disposed on the lower heating plate 22 with the surface on which the SAW wafer 13 is fixed upward, and is disposed on the surface of the SAW wafer 13. Resin sheet 11. In this step, the laminated body 15 may be firstly arranged on the lower heating plate 22, and then the resin sheet 11 may be arranged on the laminated body 15; or the resin sheet 11 may be laminated on the laminated body 15 first, and then laminated with The laminate of the laminate 15 and the resin sheet 11 is disposed on the lower heating plate 22. [0083] (Step of Embedding Electronic Device into Resin Sheet for Electronic Device) Next, as shown in FIG. 9, the lower heating plate 22 and the upper heating plate 24 are hot-pressed to embed the SAW wafer 13 into the resin sheet 11. . The lower heating plate 22 and the upper heating plate 24 may be devices provided by flat pressing. The resin sheet 11 functions as a sealing resin for protecting the SAW wafer 13 and its attached components from the external environment. [0084] The embedding step is preferably performed in such a manner that the amount X2 of the resin constituting the resin sheet 11 entering the hollow portion 14 between the SAW filter 13 and the printed wiring board 12 is 0 μm or more and 50 μm or less. . The amount X2 is more preferably 0 μm or more and 30 μm or less, and still more preferably 0 μm or more and 20 μm or less. As a method of making the said amount X2 of 0 micrometers or more and 50 micrometers or less, this can be achieved by adjusting the viscosity of the resin sheet 11, or adjusting a hot-pressing condition. More specifically, for example, a method of setting the pressure and temperature relatively high may be mentioned. [0085] Specifically, the hot-pressing conditions when the SAW wafer 13 is embedded in the resin sheet 11 vary depending on the viscosity of the resin sheet 11 and the like, but the temperature is preferably 20 to 150 ° C, and more preferably 40 to 100 ° C. The pressure is, for example, 0.01 to 20 MPa, preferably 0.05 to 5 MPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes. Examples of the hot pressing method include parallel flat plate pressing and roll pressing. Among them, parallel flat plate extrusion is preferred. By making the hot-pressing condition within the above-mentioned numerical range, it is easy to make the entering amount X2 within the above-mentioned numerical range. If the temperature during hot pressing is too high, a reaction will occur during hot pressing, and there may be a deviation in the amount of intrusion. From the viewpoint of operability, a low temperature (for example, 100 ° C. or lower) is also required. In addition, from the viewpoint of preventing breakage of the wafer, the pressure is also preferably low. [0086] In consideration of improving the adhesion and followability of the resin sheet 11 to the SAW wafer 13 and the printed wiring board 12, it is preferable to perform the extrusion under reduced pressure. As the aforementioned decompression conditions, the pressure is, for example, 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and the decompression holding time (time from the start of decompression to the start of extrusion) is, for example, 5 to 600 seconds, preferably 10 to 300 second. [0087] (Separator Separating Step) Next, as in this embodiment, when the resin sheet 11 is used in a state where the spacer is attached on one side, the spacer 11a is peeled (see FIG. 10). [0088] (Step of Thermally Curing to Obtain a Sealed Body) Next, the resin sheet 11 is thermally cured to obtain a sealed body 25. The step of obtaining the sealing body is preferably performed as follows: When the amount of the resin entering the hollow portion 14 in the state after the step of obtaining the sealing body 25 is set to Y2, the amount of the entering amount is subtracted from the amount of entering Y2 The value obtained by X2 is 60 μm or less. The value obtained by subtracting the above-mentioned entry amount X2 from the above-mentioned entry amount Y2 is more preferably 30 μm or less, and still more preferably 10 μm or less. As a method of making the value obtained by subtracting the above-mentioned entry amount X2 from the above-mentioned entry amount Y2 to 60 μm or less, the resin sheet 11 can be adjusted by adjusting the viscosity before curing of the resin sheet 11 or increasing the curing rate during heating. To achieve. [0089] Specifically, the conditions for the thermosetting treatment vary depending on the viscosity of the resin sheet 11, the constituent materials, and the like, but the heating temperature is preferably 100 ° C or more, and more preferably 120 ° C or more. On the other hand, the upper limit of the heating temperature is preferably 200 ° C or lower, and more preferably 180 ° C or lower. The heating time is preferably 10 minutes or more, and more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 minutes or less, and more preferably 120 minutes or less. The pressure may be increased as necessary, and is preferably 0.1 MPa or more, and more preferably 0.5 MPa or more. On the other hand, the upper limit is preferably 10 MPa or less, and more preferably 5 MPa or less. By setting the conditions of the thermosetting treatment within the above-mentioned numerical range, it is easy to make the resin flow distance from the embedding step to after the thermosetting step, that is, the value obtained by subtracting the entering amount X2 from the entering amount Y2. Within the specified range. [0090] When only one SAW filter 13 as an electronic device is sealed, the sealing body 25 may be used as one hollow electronic device package. In addition, when a plurality of SAW filters 13 are collectively sealed, they are divided into a single SAW filter, so that each can be made into a hollow electronic device package. That is, as in the present embodiment, when a plurality of SAW filters 13 are collectively sealed, the following configuration may be performed. [0091] (Cutting Step) After the heat curing step, cutting of the sealing body 25 may be performed (see FIG. 6). Thereby, a hollow package 18 (hollow electronic device package) in units of the SAW wafer 13 can be obtained. [0092] (Substrate Mounting Step) If necessary, a substrate mounting step of forming a bump on the hollow package 18 and mounting the bump on another substrate (not shown) may be performed. When the hollow package 18 is mounted on a substrate, a known device such as a flip chip bonder or a wafer bonder can be used. [0093] In the embodiment described above, the case where the hollow electronic device of the present invention is a SAW wafer 13 as a semiconductor wafer having a movable portion has been described. However, as long as the hollow electronic device of the present invention has a hollow portion between the adherend and the electronic device, it is not limited to this example. For example, a semiconductor wafer having a MEMS (Micro Electro Mechanical Systems) as a movable portion such as a pressure sensor or a vibration sensor may be used. In addition, in the embodiment described above, a case where an electronic device is embedded using a resin sheet and extruded by parallel flat plates has been described. However, the present invention is not limited to this example, and a vacuum chamber may be used in a vacuum state. In the room, after the laminate of the electronic device and the resin sheet is sealed with a release film, a gas of atmospheric pressure or higher is introduced into the chamber, and the electronic device is buried in the thermosetting resin sheet of the resin sheet. Specifically, the electronic device can be embedded in the thermosetting resin sheet of the resin sheet by the method described in Japanese Patent Application Laid-Open No. 2013-52424. In the above-mentioned embodiment, the case where the resin sheet of this invention is used for hollow sealing was demonstrated. However, the resin sheet of the present invention may be a sealing sheet (for example, a resin sheet used in a form in which a hollow portion is also sealed) other than a hollow sealing sheet. [Examples] [0094] Hereinafter, suitable examples of the present invention will be described in detail. However, the materials, blending amounts, and the like described in this example are not intended to limit the scope of the present invention to this unless they are specifically limited. [0095] The components of the resin sheet used in the examples will be described. Epoxy resin: YSLV-80XY (bisphenol F-type epoxy resin, epoxy equivalent 200g / eq., Softening point 80 ° C) manufactured by Nippon Steel Chemical Co., Ltd. Phenol resin: LVR8210DL (phenolic type) Phenol resin, hydroxyl equivalent 104g / eq., Softening point 60 ° C) Thermoplastic resin: ME-2006M (carboxyl-containing acrylate polymer, weight average molecular weight: about 600,000, acid value: 31 mgKOH / g. Methyl ethyl ketone solution with a polymer concentration of 20%) Inorganic filler A-1: FB-8SM (Silica dioxide, average particle size: 5 μm, without surface treatment, manufactured by Denka Co., Ltd., containing only particles with a particle size of 0.1 μm or more and 50 μm) The following silica (excluding silica with a particle size larger than 50 μm and silica with a particle size smaller than 0.1 μm), specific surface area: 2.5) Inorganic filler A-2: FB-8SM (Dioxide by Denka) Silicon, average particle size: 5 μm, without surface treatment, containing only silicon dioxide with a particle size of 0.1 μm or more and 50 μm or less (does not include silicon dioxide with a particle size greater than 50 μm and silicon dioxide with a particle size less than 0.1 μm), Specific surface area: 2.7) Inorganic filler A-3: FB-8SM (silica dioxide, Average particle size: 5 μm, without surface treatment, containing only silicon dioxide with a particle size of 0.1 μm or more and 50 μm or less (excluding silicon dioxide with a particle size greater than 50 μm and silicon dioxide with a particle size less than 0.1 μm), specific surface area : 1.8) Inorganic filler A-4: FB-8SM (silica dioxide, average particle size: 5 μm, no surface treatment, manufactured by Denka Co., Ltd., containing only silicon dioxide with a particle size of 0.1 μm or more and 50 μm or less (excluding Silicon dioxide with a particle size greater than 50 μm and silicon dioxide with a particle size less than 0.1 μm), specific surface area: 4.3) Inorganic filler B: SC-220G-SMJ (silica dioxide, average particle size 0.5 μm) manufactured by Admatechs (Including silicon dioxide with a particle size of more than 50 μm and silicon dioxide with a particle size of less than 0.001 μm) were performed with 3-methacryloxypropyltrimethoxysilane (product name: Shin-Etsu Chemical Co., Ltd .: KBM-503) Inorganic filler after surface treatment. The surface treatment was performed with 1 part by weight of a silane coupling agent with respect to 100 parts by weight of the inorganic filler B. Carbon black: # 20 silane coupling agent (epoxy silane coupling agent) manufactured by Mitsubishi Chemical Corporation: KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Silicone Co., Ltd. Hardening accelerator: Japan HC-188W (a latent effect catalyst in which an imidazole-based catalyst 2P4MHZ is encapsulated with 5-hydroxy-isophthalic acid. The content of 2P4MHZ is 67%) [0096] [Examples of resin sheets of Examples and Comparative Examples Production] Each component was dissolved and dispersed in methyl ethyl ketone as a solvent according to the blending ratio of the resin flakes shown in Table 1 to obtain a varnish having a concentration of 75% by weight. This varnish was applied to a silicone release-treated spacer, and then dried at 110 ° C for 5 minutes. Thus, a sheet having a thickness of 55 μm was obtained. This sheet was laminated in 4 layers to produce a resin sheet having a thickness of 220 μm. In the following evaluation, the thickness of the resin sheet is preferably implemented by a thickness equal to or greater than the total of the wafer thickness and the bump height used in the following evaluation. This is because if the thickness of the sheet is too thin, the amount of invasion decreases, and stable evaluation cannot be performed. Therefore, in this embodiment, the "total of wafer thickness and bump height" in the following evaluation is 220 μm. [Evaluation of Resin Penetration into Hollow Parts of Package] <Step A> First, a model wafer of the following pattern is prepared to be mounted on a glass substrate (76 mm in length, 26 mm in width, and 1.0 in thickness) via resin bumps. mm) of the model wafer mounting substrate. The gap width between the glass substrate and the model wafer was 20 μm. <Form of Model Wafer> The wafer size is 3 mm in length, 3 mm in width, and 200 μm thick, and a resin bump (resin material: dry film resist) with a height of 20 μm is formed. The number of bumps is 63 bumps, and they are arranged according to a preset pattern (a pattern of 7 bumps is arranged in each 1mm × 1mm area, and there are also parts with non-equal intervals). The material of the model wafer is a silicon wafer. In recent years, the reduction in thickness of electronic devices has been required, and the reduction in thickness of wafers or semiconductor packages has been required. Therefore, the bump height formed on the surface of the wafer is required to be about 10 to 50 μm. Here, since a bump is formed on the wafer surface after the silicon wafer is ground to a predetermined thickness, if the wafer thickness is too thin, the bump cannot be effectively formed. For this reason, in this embodiment, in consideration of the limit of the thickness of the wafer where the bumps can be formed stably, the evaluation was performed using about 200 μm as the wafer thickness. In addition, in order to suppress the deviation of the evaluation, the lower the bump height, the better. From this viewpoint, the bump height was evaluated at 20 μm. [0098] Specifically, the model wafer is mounted on the glass substrate under the following bonding conditions to prepare a model wafer mounting substrate. <Joining conditions> Apparatus: Panasonic Electric Works Co., Ltd. Joining conditions: 200 ° C, 3N, 1 second, and ultrasonic power 2W [0099] <Step B> A 220 μm-thick resin sheet prepared in the above examples and comparative examples was cut 1 cm in length and 1 cm in width were made into samples. [0100] <Step C> The sample is placed on the model wafer of the model wafer mounting substrate. [0101] <Step D> The aforementioned model wafer is embedded in the aforementioned sample under the following embedding conditions. <Buried conditions> Extrusion method: Flat plate extrusion temperature: 65 ° C Pressure: 0.1MPa Vacuum degree: 1.6kPa Extrusion time: 1 minute [0102] <Step E> After opening to atmospheric pressure, it is measured to enter the aforementioned model wafer The amount X1 of the resin constituting the sample in the hollow portion with the glass substrate. Specifically, using the brand name "Digital Microscope VHX-2000" (200 times) manufactured by KEYENCE Corporation, the amount of resin X1 entering the hollow portion between the model wafer and the ceramic substrate was measured. Regarding the resin entering amount X1, the maximum reach distance of the resin entering the hollow portion from the end of the SAW wafer was measured, and this was taken as the resin entering amount X1. In addition, when the hollow portion is not extended but is extended further outside than the SAW wafer, the amount of resin entered is expressed as a negative value. [0103] <Step F> After the foregoing step E, it is left in a hot air dryer at 150 ° C. for 1 hour. Thereby, the said sample was heat-hardened and the sealing body sample was obtained. In this example, as a hardening accelerator, HC-188W (a latent hardening catalyst in which an imidazole-based catalyst 2P4MHZ is encapsulated with 5-hydroxy-isophthalic acid) is used as a hardening accelerator. 2P4MHZ contains a ratio of 67 %), Considering the reaction initiation temperature of the product, in this example, the heating conditions were set at 150 ° C for 1 hour. [0104] After step G, the amount of resin Y1 entering the hollow portion of the sealing body sample is measured. The measurement method is the same as that of the entering amount X1. The evaluation was performed with the resin entering amount Y1 between 0 μm and 80 μm as “○”, and the case with less than 0 μm or more than 80 μm as “×”. The results are shown in Table 1. [0105] Then, a value obtained by subtracting the amount of entry X1 from the amount of entry Y1 is determined. The results are shown in Table 1. The case where the value obtained by subtracting the amount X1 from the amount of entry Y1 from 100 μm or less was evaluated as “○”, and the case where the value was greater than 100 μm was evaluated as “×”. The results are shown in Table 1. [Measurement of Melt Viscosity η of Resin Sheet at 90 ° C.] Using a rheometer (manufactured by HAAKE, MARS II), a parallel plate method was used to measure the resin sheet produced in Examples and Comparative Examples at 90 ° C. Melt viscosity η. More specifically, the measurement was performed under the following conditions. The viscosity at the lowest value when measured at 90 ° C was defined as the melt viscosity η. The results are shown in Table 1. <Measurement conditions> Measurement mode: After heating up from room temperature (25 ° C) to 90 ° C, the heating rate is maintained at 90 ° C for 15 minutes, etc .: 10 ° C / minute strain number: 0.05% Frequency: 1hz Sample diameter: 8mmφ Measurement of Specific Surface Area of Inorganic Filler) The resin flakes were put into a crucible and heated at 700 ° C. for 2 hours in the atmosphere to ash it. The composition of the resin sheet is an organic component other than the inorganic filler. Actually, all of the organic components are lost through the intense heat treatment described above. Therefore, the obtained ash is regarded as an inorganic filler and measured. The BET specific surface area was measured by a BET adsorption method (multipoint method). Specifically, using a 4-connected specific surface area and pore size distribution measuring device "NOVA-4200e" made by Quantachrome, the obtained ash was vacuum degassed at 110 ° C for 6 hours or more, and then the temperature was 77.35K in nitrogen. The measurement was performed next. The results are shown in Table 1. [0108]

[0109]

11‧‧‧Resin sheet (resin sheet) for electronic devices

13‧‧‧SAW filter (electronic device)

14‧‧‧ Hollow

15‧‧‧ laminated

18‧‧‧ hollow electronic device package

25‧‧‧Sealed body

112‧‧‧ glass substrate

113‧‧‧model chip

113a‧‧‧resin bump

114‧‧‧Hollow Department

115‧‧‧ Model wafer mounting substrate

[0018] FIG. 1 is a schematic cross-sectional view of a resin sheet for sealing an electronic device according to this embodiment.图 [Fig. 2] is a schematic cross-sectional view for explaining a procedure for measuring the entering amount X1 and the entering amount Y1.图 [Fig. 3] is a schematic cross-sectional view for explaining a procedure for measuring the entering amount X1 and the entering amount Y1.图 [Fig. 4] is a schematic cross-sectional view for explaining a procedure for measuring the entering amount X1 and the entering amount Y1. [Fig. 5] is a schematic cross-sectional view for explaining a procedure for measuring the amount of entry X1 and the amount of entry Y1. [Fig. 6] is an enlarged view of a part of Fig. 5. [FIG. 7] A schematic cross-sectional view for explaining a method of manufacturing a hollow electronic device package according to this embodiment. [FIG. 8] A schematic cross-sectional view for explaining a method for manufacturing a hollow electronic device package according to this embodiment. [FIG. 9] A schematic cross-sectional view for explaining a method for manufacturing a hollow electronic device package according to this embodiment. [FIG. 10] A schematic cross-sectional view for explaining a method for manufacturing a hollow electronic device package according to this embodiment. [FIG. 11] A schematic cross-sectional view for explaining a method for manufacturing a hollow electronic device package according to this embodiment.

Claims (3)

A resin sheet characterized by containing an inorganic filler, and the particle diameter of the inorganic filler is in a range of 0.5 μm or more and 45 μm or less. As for the inorganic filler, 50% by weight or more of the inorganic filler in the total inorganic filler is used. agent specific surface area in the range 2.0m ² /g~4.5m ² / g of. The resin sheet according to claim 1, wherein the content of the inorganic filler is 75% by weight or more based on the entire resin sheet. For example, the resin sheet of claim 1 or 2, wherein the melt viscosity η at 90 ° C. is 100,000 Pa · s or more and 350,000 Pa · s or less.