TW201935635A - Semiconductor chip pickup device, semiconductor chip packaging device and packaging method capable of stably peeling a semiconductor chip from an adhesive sheet - Google Patents

Semiconductor chip pickup device, semiconductor chip packaging device and packaging method capable of stably peeling a semiconductor chip from an adhesive sheet Download PDF

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TW201935635A
TW201935635A TW108119920A TW108119920A TW201935635A TW 201935635 A TW201935635 A TW 201935635A TW 108119920 A TW108119920 A TW 108119920A TW 108119920 A TW108119920 A TW 108119920A TW 201935635 A TW201935635 A TW 201935635A
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semiconductor wafer
push
adhesive sheet
packaging
negative pressure
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TW108119920A
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TWI690038B (en
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志賀康一
小西宣明
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日商芝浦機械電子裝置股份有限公司
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Abstract

This invention aims to stably peel a semiconductor chip from an adhesive sheet. This invention relates to a semiconductor chip pickup device that picks up a semiconductor chip t adhered and held on an adhesive sheet 11 from the adhesive sheet 11, comprising: a pickup mechanism 40 for picking up the semiconductor chip t from the adhesive sheet 11; a push-up mechanism 60 having a plurality of push-up bodies 62a to 62d disposed so as to be movable relative to each other in the axial direction to have the same axial center, wherein a negative pressure is applied to the portion of the adhesive sheet 11 where the semiconductor chip t to be picked up is located from the side opposite to the semiconductor chip t, when the semiconductor chip t is picked up by the pickup mechanism, the semiconductor chip t is pushed upward by the plurality of push-up bodies 62a to 62d; and a negative pressure adjustment mechanism 63b for setting the magnitude of the negative pressure to -85 kPa or less in gauge pressure.

Description

半導體晶片的拾取裝置、半導體晶片的封裝裝置與封裝方法Pickup device for semiconductor wafer, packaging device and packaging method for semiconductor wafer

本發明是有關於一種半導體晶片的拾取裝置、半導體晶片的封裝裝置與封裝方法。The invention relates to a pickup device for a semiconductor wafer, a packaging device for a semiconductor wafer, and a packaging method.

將半導體晶片封裝於引線框架或配線基板、插入式基板等基板上的封裝步驟已為人所知。於該封裝步驟中,自晶圓環上一個一個地取出半導體晶片,並移送至基板上來進行封裝。晶圓環是保持附著有被切斷成各半導體晶片而單片化的半導體晶圓的黏著片的環狀的構件。於自晶圓環上取出半導體晶片時,使用如下的拾取裝置,其具備:拾取機構,具有吸附半導體晶片的吸附噴嘴;以及上頂機構,利用上頂針自下表面上頂吸附於吸附噴嘴上的半導體晶片,而對自黏著片上剝離及取出半導體晶片進行輔助。Packaging steps for packaging a semiconductor wafer on a substrate such as a lead frame, a wiring substrate, or a plug-in substrate are known. In this packaging step, the semiconductor wafers are taken out one by one from the wafer ring and transferred to the substrate for packaging. The wafer ring is a ring-shaped member that holds an adhesive sheet to which a semiconductor wafer cut into individual semiconductor wafers and singulated is attached. When taking out a semiconductor wafer from a wafer ring, a pick-up device is used, which includes: a pick-up mechanism having a suction nozzle that sucks the semiconductor wafer; and an upper ejection mechanism that uses an upper ejector pin to adsorb the suction nozzle from the lower surface. Semiconductor wafers, and assist in peeling and taking out semiconductor wafers from the adhesive sheet.

然而,最近的半導體晶片正如其厚度為50 μm以下般進行薄化。當利用前端尖的上頂針僅上頂此種薄的半導體晶片時,產生半導體晶片破裂等損傷的擔憂變大。因此,如專利文獻1中所示般,開發有一種具有多個上推體的拾取裝置。多個上推體使軸線一致而同心地設置,並以附著於半導體晶片的下表面上的黏著片的剝離自半導體晶片的周邊部朝中心部緩慢地進行的方式進行動作。多個上推體的上表面形狀通常形成為與被拾取的半導體晶片相同的形狀,例如四邊形。However, recent semiconductor wafers are thinned as if the thickness is 50 μm or less. When only such a thin semiconductor wafer is pushed up by a tip pin with a tip, there is a concern that damage such as cracking of the semiconductor wafer may occur. Therefore, as shown in Patent Document 1, a pickup device having a plurality of push-up bodies has been developed. The plurality of pushers are provided so that the axes are aligned and concentric, and the peeling of the adhesive sheet attached to the lower surface of the semiconductor wafer is performed slowly from the peripheral portion to the center portion of the semiconductor wafer. The upper surface shape of the plurality of push-up bodies is generally formed into the same shape as the picked-up semiconductor wafer, for example, a quadrangle.

於此種拾取裝置中,首先使多個上推體同時上升至規定的高度為止,並向上推被拾取的半導體晶片的整個下表面。其後,留下位於最外側的上推體,並使其他上推體進一步上升至規定的高度為止。繼而,留下第2個上推體並使其他上推體上升。半導體晶片的下表面的利用上推體的支撐自周邊朝中心部依次開放。因此,自半導體晶片的外周側緩慢地剝離黏著片。進而,為了促進黏著片自半導體晶片的下表面上的剝離,提出在上推體的與黏著片的接觸面(上表面)上設置凹部,所述凹部用以使抽吸力作用於所述接觸面(上表面)與黏著片之間。設置於上推體上的凹部變成黏著片開始自半導體晶片上剝離的部位,可促進黏著片自半導體晶片上的剝離。 [現有技術文獻] [專利文獻]In such a pick-up device, first, a plurality of push-up bodies are simultaneously raised to a predetermined height, and the entire lower surface of the picked-up semiconductor wafer is pushed up. After that, the push-up body located at the outermost side is left, and the other push-up bodies are further raised to a predetermined height. Then, the second push-up body is left and the other push-up bodies are raised. The support of the lower surface of the semiconductor wafer by the push-up body is sequentially opened from the periphery toward the center. Therefore, the adhesive sheet is slowly peeled from the outer peripheral side of the semiconductor wafer. Furthermore, in order to promote the peeling of the adhesive sheet from the lower surface of the semiconductor wafer, it is proposed to provide a recessed portion on the contact surface (upper surface) of the pusher with the adhesive sheet, the recessed portion being used to make a suction force act on the contact Between the face (upper surface) and the adhesive sheet. The recessed portion provided on the push-up body becomes a part where the adhesive sheet starts to peel from the semiconductor wafer, and the peeling of the adhesive sheet from the semiconductor wafer can be promoted. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2010-056466號公報[Patent Document 1] Japanese Patent Laid-Open No. 2010-056466

[發明所欲解決之課題] 但是,本申請案發明者等發現即便於使用如所述般的拾取裝置的情況下,有時於半導體晶片中亦產生破損。即,本申請案發明者等確認於用作實驗用途的封裝裝置中,使用多個品種的半導體晶片進行封裝實驗的結果,存在自黏著片上剝離來進行拾取時產生破損的半導體晶片。[Problems to be Solved by the Invention] However, the inventors of the present application have discovered that even when a pickup device as described above is used, breakage may occur in a semiconductor wafer. That is, the inventors of the present application confirmed that in a packaging device used for experiments, as a result of a packaging experiment using a plurality of types of semiconductor wafers, there was a semiconductor wafer that was broken when it was peeled from the adhesive sheet and picked up.

本申請案發明者等進行努力研究的結果,查明於半導體晶片的厚度大概為30 μm以下的半導體晶片中比較容易產生破損。因此,使用30 μm以下的多個品種的半導體晶片,進行拾取規定的單位數的半導體晶片的實驗。其結果,判明即便是相同品種的半導體晶片,亦存在破損的產生頻率於各單位數中大不相同的情況。具體而言,針對厚度為27 μm的半導體晶片,於某日的中午以前進行的拾取的實驗中,破損的產生率為92%。相對於此,於次日的中午以前利用相同品種的半導體晶片進行的拾取的實驗中,破損的產生頻率為4%。另外,進而於另一日進行的實驗中,規定的單位數之中,破損集中於前一半中,於後一半中存在幾乎未看到破損者。As a result of diligent research by the inventors of the present application, it was found that a semiconductor wafer having a thickness of about 30 μm or less is more likely to be damaged. Therefore, experiments using a plurality of types of semiconductor wafers of 30 μm or less in picking up semiconductor wafers of a predetermined unit number were performed. As a result, it was found that even with semiconductor wafers of the same type, the frequency of occurrence of breakage may be significantly different in each unit number. Specifically, for a semiconductor wafer having a thickness of 27 μm, the occurrence rate of breakage in a pick-up experiment performed before noon on a certain day was 92%. In contrast, in a pick-up experiment using the same type of semiconductor wafer before noon of the next day, the frequency of damage was 4%. In addition, in an experiment performed on another day, among the predetermined number of units, the damage was concentrated in the first half, and in the latter half, there were few people who saw the damage.

發明者等得到該些結果而進一步努力研究的結果,查明於上推時作用於上推體與黏著片之間的抽吸力變動。即,抽吸力是自實驗室中所配備的負壓供給用的配管設備獲得。該配管設備的負壓根據一同利用負壓的其他實驗裝置的使用狀況而變動。即,本申請案發明者等查明半導體晶片的破損與上頂時的抽吸力之間存在密切的關係。The inventors have obtained these results and made further research, and ascertained the change in the suction force acting on the push-up body and the adhesive sheet during the push-up. That is, the suction force is obtained from the piping equipment for negative pressure supply provided in the laboratory. The negative pressure of the piping equipment varies depending on the use conditions of other experimental devices that also use the negative pressure. That is, the inventors of the present application have found that there is a close relationship between the breakage of the semiconductor wafer and the suction force at the time of lifting.

本發明的目的在於提供一種可自黏著片上穩定地剝離半導體晶片的半導體晶片的拾取裝置、半導體晶片的封裝裝置與封裝方法。An object of the present invention is to provide a pickup device for a semiconductor wafer, a semiconductor wafer packaging device, and a packaging method capable of stably peeling a semiconductor wafer from a self-adhesive sheet.

[解決課題之手段] 本實施形態的半導體晶片的拾取裝置是將附著保持於黏著片上的半導體晶片自所述黏著片上拾取的半導體晶片的拾取裝置,其具備:拾取機構,自所述黏著片上拾取所述半導體晶片;上頂機構,具有使軸心變成相同來配置且相互移動自如地設置於軸心方向上的多個上推體,自與所述半導體晶片相反側,使負壓作用於由所述拾取機構所拾取的半導體晶片於所述黏著片中所在的部分,當該半導體晶片由所述拾取機構拾取時,藉由所述多個上推體來上頂該半導體晶片;以及負壓調整機構,將所述負壓的大小以錶壓計設定成-85 kPa以下。[Means for Solving the Problems] The semiconductor wafer pickup device of this embodiment is a semiconductor wafer pickup device that picks up and holds a semiconductor wafer adhered and held on an adhesive sheet, and includes a pickup mechanism for picking up from the adhesive sheet. The semiconductor wafer; a top-up mechanism having a plurality of push-up bodies arranged in the axial center direction so as to be arranged to be the same as the center of the axis and to move mutually freely, and from a side opposite to the semiconductor wafer, a negative pressure acts on the A portion of the semiconductor wafer picked up by the pick-up mechanism in the adhesive sheet, when the semiconductor wafer is picked up by the pick-up mechanism, the semiconductor wafer is pushed up by the plurality of push-up bodies; and a negative pressure An adjustment mechanism sets the magnitude of the negative pressure to -85 kPa or less with a gauge.

本實施形態的半導體晶片的封裝裝置具備:供給裝置,對附著保持半導體晶片的黏著片進行保持;基板平台,載置基板;所述拾取裝置,自所述供給裝置所保持的所述黏著片上拾取所述半導體晶片;以及封裝機構,將由所述拾取裝置所取出的所述半導體晶片封裝於所述基板上。The packaging device for a semiconductor wafer according to this embodiment includes a supply device that holds an adhesive sheet to which the semiconductor wafer is attached and held; a substrate platform on which a substrate is placed; and the pick-up device picks up from the adhesive sheet held by the supply device. The semiconductor wafer; and a packaging mechanism that packages the semiconductor wafer taken out by the pickup device on the substrate.

本實施形態的半導體晶片的封裝方法是將附著保持於黏著片上的半導體晶片自所述黏著片上拾取,並將所拾取的半導體晶片封裝於基板上的半導體晶片的封裝方法,當藉由自所述黏著片上拾取所述半導體晶片的拾取機構而自所述黏著片上拾取所述半導體晶片時,自與該半導體晶片相反側,使負壓作用於所述黏著片上,並且藉由使軸心變成相同來配置且相互移動自如地設置於軸心方向上的多個上推體來上頂該半導體晶片之際,將所述負壓的大小以錶壓計設定成-85 kPa以下。The method of packaging a semiconductor wafer according to this embodiment is a method of packaging a semiconductor wafer adhered and held on an adhesive sheet from the adhesive sheet, and packaging the picked-up semiconductor wafer on a substrate. When picking up the semiconductor wafer on the adhesive sheet and picking up the semiconductor wafer from the adhesive sheet, a negative pressure is applied to the adhesive sheet from the side opposite to the semiconductor wafer, and the axis is made the same When a plurality of push-up bodies arranged in the axial direction are arranged and can move mutually to push up the semiconductor wafer, the magnitude of the negative pressure is set to -85 kPa or less with a gauge.

[發明的效果] 根據本發明,可自黏著片上穩定地剝離半導體晶片。[Effects of the Invention] According to the present invention, a semiconductor wafer can be stably peeled from an adhesive sheet.

以下,參照圖式對本發明的實施形態(以下,稱為實施形態)進行具體說明。再者,各構成部的位置及大小等只不過是為了容易理解結構的權宜的表達。Hereinafter, embodiments of the present invention (hereinafter, referred to as embodiments) will be specifically described with reference to the drawings. In addition, the position and size of each component are just expedient expressions for easy understanding of the structure.

圖1是表示實施形態的半導體晶片的封裝裝置的概略構成的側面圖。半導體晶片的封裝裝置1具備:供給裝置10,供給半導體晶片t;基板平台20,載置封裝半導體晶片t的基板K;中間平台30,配置於該供給裝置10與基板平台20之間,載置半導體晶片t;拾取機構40,自供給裝置10上一個一個地拾取半導體晶片t並移送至中間平台30上;封裝機構50,吸附保持載置於中間平台30上的半導體晶片t,並將其封裝於載置在基板平台20上的基板K上的規定的位置上;上頂機構60,配置於供給裝置10內,並向上推由拾取機構40所拾取的半導體晶片t;以及控制裝置70,控制供給裝置10、基板平台20、拾取機構40、封裝機構50、上頂機構60等。再者,拾取機構40與上頂機構60是拾取裝置的構成元件。FIG. 1 is a side view showing a schematic configuration of a packaging device for a semiconductor wafer according to the embodiment. A semiconductor wafer packaging device 1 includes a supply device 10 for supplying a semiconductor wafer t, a substrate stage 20 on which a substrate K for packaging the semiconductor wafer t is placed, and an intermediate stage 30 disposed between the supply device 10 and the substrate stage 20 and placed thereon. Semiconductor wafer t; Pickup mechanism 40 picks up semiconductor wafer t one by one from feeder 10 and transfers it to intermediate stage 30; and packaging mechanism 50 sucks and holds semiconductor wafer t placed on intermediate stage 30 and packages it At a predetermined position on the substrate K placed on the substrate stage 20; the top-up mechanism 60 is arranged in the supply device 10 and pushes the semiconductor wafer t picked up by the pickup mechanism 40 upward; and the control device 70 controls the The supply device 10, the substrate stage 20, the pickup mechanism 40, the packaging mechanism 50, the top-up mechanism 60, and the like. The pickup mechanism 40 and the top mechanism 60 are constituent elements of a pickup device.

供給裝置10具有晶圓台13,所述晶圓台13藉由未圖示的晶圓環供給裝置來供給對附著有將半導體晶圓W切斷而單片化的多個半導體晶片t的黏著片11進行保持的晶圓環12。晶圓台13藉由未圖示的XYθ方向驅動裝置而可於X方向、Y方向、θ(水平旋轉)方向上移動。X方向、Y方向是相互正交的水平方向。圖示的Z方向是相對於水平方向而垂直的方向。The supply device 10 includes a wafer stage 13 for supplying adhesion to a plurality of semiconductor wafers t to which the semiconductor wafer W is cut and singulated by a wafer ring supply device (not shown). The wafer 11 holds the wafer ring 12. The wafer stage 13 can be moved in the X direction, the Y direction, and the θ (horizontal rotation) direction by an XYθ direction driving device (not shown). The X and Y directions are horizontal directions orthogonal to each other. The Z direction shown in the figure is a direction perpendicular to the horizontal direction.

基板平台20藉由未圖示的基板搬入裝置來供給載置封裝前的基板K,封裝有半導體晶片t後的基板K藉由未圖示的基板搬出裝置來取出並搬出。基板平台20由未圖示的XYθ方向驅動裝置支撐,並可於X方向、Y方向、θ(水平旋轉)方向上移動。The substrate stage 20 supplies a substrate K before packaging by a substrate carrying-in device (not shown), and the substrate K after the semiconductor wafer t is packaged is taken out by a substrate carrying-out device (not shown). The substrate stage 20 is supported by a XYθ-direction driving device (not shown), and is movable in the X direction, the Y direction, and the θ (horizontal rotation) direction.

中間平台30是於將拾取機構40所拾取的半導體晶片t交接至封裝機構50中時,暫時載置半導體晶片t的平台。The intermediate stage 30 is a stage on which the semiconductor wafer t is temporarily placed when the semiconductor wafer t picked up by the pickup mechanism 40 is transferred to the packaging mechanism 50.

拾取機構40具備:吸附噴嘴41,吸附保持半導體晶片t;以及驅動裝置(未圖示),使該吸附噴嘴41如圖1中由虛線箭頭所示般在供給裝置10與中間平台30之間移動。The pick-up mechanism 40 includes a suction nozzle 41 that sucks and holds the semiconductor wafer t, and a driving device (not shown) that moves the suction nozzle 41 between the supply device 10 and the intermediate platform 30 as shown by a dotted arrow in FIG. .

封裝機構50具備:封裝工具51,吸附保持半導體晶片t,並對所吸附保持的半導體晶片t加壓(亦存在併用加熱的情況)來將其封裝於基板K上的規定的位置上;以及驅動裝置(未圖示),使該封裝工具51如由虛線箭頭所示般在中間平台30與基板平台20之間移動。The packaging mechanism 50 includes a packaging tool 51 that sucks and holds the semiconductor wafer t, and pressurizes the semiconductor wafer t that is held and held (there is also a case where heating is used together) to package the semiconductor wafer t at a predetermined position on the substrate K; A device (not shown) that moves the packaging tool 51 between the intermediate stage 30 and the substrate stage 20 as shown by a dotted arrow.

繼而,使用圖2及圖3來進一步對上頂機構60進行說明。Next, the top mechanism 60 will be described further using FIG. 2 and FIG. 3.

上頂機構60具備:支承體61,與由晶圓台13支撐的黏著片11的下表面相向來設置;以及上推機構62,內置於支承體61中,並上頂附著於黏著片11上的半導體晶片t。The upper mechanism 60 includes a support body 61 provided to face the lower surface of the adhesive sheet 11 supported by the wafer stage 13, and a push-up mechanism 62 built into the support body 61 and attached to the upper surface of the adhesive sheet 11. Of the semiconductor wafer t.

支承體61對照吸附噴嘴41拾取半導體晶片t的位置而固定地配置。支承體61形成上下表面被堵塞的中空的圓柱形狀,且其上表面被設為自下側吸附支撐黏著片11的支承面61a。另外,支承體61的中空部分成為內部空間61b。The support body 61 is fixedly arranged with respect to the position where the suction nozzle 41 picks up the semiconductor wafer t. The support body 61 is formed in a hollow cylindrical shape whose upper and lower surfaces are closed, and the upper surface thereof is set as a support surface 61 a that sucks and supports the adhesive sheet 11 from the lower side. The hollow portion of the support body 61 is an internal space 61b.

於支承面61a上設置位於被拾取的半導體晶片t的周圍的用以吸附黏著片11的環狀的抽吸槽61c與多個抽吸孔61d。所述抽吸槽61c與多個抽吸孔61d經由連通槽61e或未圖示的連通孔而與支承體61的內部空間61b連通。即,與抽吸泵63連通的真空配管63a與支承體61的內部空間61b連接,而可對內部空間61b內供給負壓。藉由使內部空間61b內變成負壓,可使負壓作用於抽吸槽61c與多個抽吸孔61d中。另外,於真空配管63a上,自抽吸泵63側起依次設置有電空調節器等壓力控制裝置63b、及電磁閥等開關閥63c,而可控制作用於抽吸槽61c與多個抽吸孔61d中的負壓的接通・斷開、及負壓的大小。壓力控制裝置63b作為負壓調整機構發揮功能。壓力控制裝置63b以如下方式設定為宜,即以錶壓計-85 kPa以下,較佳為-90 kPa以下的負壓作用於抽吸槽61c與多個抽吸孔61d中。於本實施形態中,以設為-90 kPa的例子進行說明。此處,所謂錶壓,是指以大氣壓為基準(0 kPa)的相對的壓力。因此,所謂以錶壓計-85 kPa以下,是指包含比大氣壓低85 kPa的壓力、且真空度比該壓力(-85 kPa)高的壓力。即,-90 kPa是真空度比-85 kPa高的壓力。另外,有時進行「-85 kPa以下的負壓」、「將負壓的大小設為-85 kPa」等表達,但均是指以錶壓計的壓力值。A ring-shaped suction groove 61 c and a plurality of suction holes 61 d are provided on the support surface 61 a around the picked-up semiconductor wafer t to suck the adhesive sheet 11. The suction groove 61c and the plurality of suction holes 61d communicate with the internal space 61b of the support body 61 via a communication groove 61e or a communication hole (not shown). That is, the vacuum piping 63a communicating with the suction pump 63 is connected to the internal space 61b of the support body 61, and a negative pressure can be supplied into the internal space 61b. By making the internal space 61b into a negative pressure, the negative pressure can be applied to the suction groove 61c and the plurality of suction holes 61d. In addition, the vacuum piping 63a is provided with a pressure control device 63b such as an electric air regulator and an on-off valve 63c such as a solenoid valve in order from the suction pump 63 side to control the suction tank 61c and a plurality of suctions. The on / off of the negative pressure in the hole 61d and the magnitude of the negative pressure. The pressure control device 63b functions as a negative pressure adjustment mechanism. The pressure control device 63b is preferably set in such a manner that a negative pressure of -85 kPa or less, preferably -90 kPa or less with a gauge pressure acts on the suction groove 61c and the plurality of suction holes 61d. In this embodiment, an example of -90 kPa will be described. Here, the gauge pressure refers to a relative pressure based on atmospheric pressure (0 kPa). Therefore, a gauge pressure of -85 kPa or less means a pressure including 85 kPa lower than atmospheric pressure and a degree of vacuum higher than the pressure (-85 kPa). That is, -90 kPa is a pressure with a degree of vacuum higher than -85 kPa. In addition, expressions such as "negative pressure below -85 kPa" and "setting the magnitude of the negative pressure to -85 kPa" may be used, but all refer to pressure values in terms of gauge pressure.

再者,可認為壓力控制裝置63b中所設定的壓力直接作用於內部空間61b及抽吸槽61c、抽吸孔61d中。因此,於本實施形態中,在真空配管63a中的開關閥63c與內部空間61b之間的部分設置有壓力檢測器63d。而且,以壓力檢測器63d的檢測值變成-90 kPa的方式設定壓力控制裝置63b的控制壓力。再者,亦可檢測作用於內部空間61b、或者抽吸槽61c或多個抽吸孔61d中的壓力,並以該檢測值變成所述壓力範圍的方式設定壓力控制裝置63b的控制壓力。另外,亦可將抽吸泵63設為作為零件而組裝入封裝裝置1中者,但並不限定於此,亦可為獨立於封裝裝置1而另外準備者,例如亦可為工廠等中所配備的負壓供給用的配管設備。總之,只要是可對壓力控制裝置63b穩定地供給以錶壓計-85 kPa以下的負壓的負壓源即可。Furthermore, it can be considered that the pressure set in the pressure control device 63b directly acts on the internal space 61b, the suction groove 61c, and the suction hole 61d. Therefore, in this embodiment, a pressure detector 63d is provided in a portion between the on-off valve 63c and the internal space 61b in the vacuum pipe 63a. The control pressure of the pressure control device 63b is set so that the detection value of the pressure detector 63d becomes -90 kPa. Furthermore, the pressure acting on the internal space 61b, the suction groove 61c, or the plurality of suction holes 61d may be detected, and the control pressure of the pressure control device 63b may be set so that the detected value becomes the pressure range. In addition, the suction pump 63 may be assembled into the packaging device 1 as a part, but it is not limited to this, and it may be prepared separately from the packaging device 1, for example, it may be a factory, etc. Equipped with piping equipment for negative pressure supply. In short, any negative pressure source may be used as long as it can stably supply a negative pressure of -85 kPa or less to the pressure control device 63b.

上推機構62具備:第1上推體~第4上推體(62a、62b、62c、62d);以及第1升降驅動裝置~第4升降驅動裝置(62e、62f、62g、62h),對應於第1上推體62a~第4上推體62d來設置,並使第1上推體62a~第4上推體62d個別地升降移動。The push-up mechanism 62 includes: a first push-up body to a fourth push-up body (62a, 62b, 62c, 62d); and a first lift driving device to a fourth lift driving device (62e, 62f, 62g, 62h), corresponding to The first push-up body 62a to the fourth push-up body 62d are provided, and the first push-up body 62a to the fourth push-up body 62d are individually moved up and down.

第1上推體62a~第4上推體62d之中,第1上推體62a~第3上推體62c於俯視下形成矩形的角筒狀,而成為使軸心變成相同的三重結構。第4上推體62d形成角柱狀,使軸心與第1上推體62a~第3上推體62c變成相同並配置於該些上推體的中央。再者,於本實施形態中,設置有四個上推體(62a~62d),但並不限定於此四個,亦可為兩個、三個、或五個以上。Among the first push-up body 62a to the fourth push-up body 62d, the first push-up body 62a to the third push-up body 62c are formed in a rectangular tube shape in a plan view, and have a triple structure in which the axes are the same. The fourth push-up bodies 62d are formed in an angular columnar shape, and the axes thereof are the same as those of the first push-up bodies 62a to the third push-up bodies 62c and are arranged at the centers of these push-up bodies. Moreover, in this embodiment, four push-up bodies (62a-62d) are provided, but it is not limited to these four, and may be two, three, or five or more.

第1上推體62a是位於最外側的上推體,其於設置在支承體61的上表面,即支承面61a的中央的矩形的開口部61f內,與該開口部61f的邊緣之間設置間隙來配置。即,開口部61f的形狀與第1上推體62a的外形相似,且比第1上推體62a的外形略大地形成。另外,於俯視下,第1上推體62a的前端面的形狀與成為上推的對象的半導體晶片t相似,且形成為比半導體晶片t略小的尺寸。因此,當向上推半導體晶片t時,半導體晶片t的緣部自第1上推體62a的周圍略微地露出。The first push-up body 62a is a push-up body located at the outermost side, and is provided in the rectangular opening portion 61f provided on the upper surface of the support body 61, that is, the center of the support surface 61a, and the edge of the opening portion 61f Clearance to configure. That is, the shape of the opening 61f is similar to the outer shape of the first push-up body 62a, and is formed slightly larger than the outer shape of the first push-up body 62a. In addition, the shape of the front end surface of the first push-up body 62a is similar to that of the semiconductor wafer t to be pushed-up in a plan view, and is formed to be slightly smaller than the semiconductor wafer t. Therefore, when the semiconductor wafer t is pushed up, the edge portion of the semiconductor wafer t is slightly exposed from the periphery of the first push-up body 62a.

第2上推體62b以被引導至第1上推體62a的內側面的狀態配置於第1上推體62a的內側。第3上推體62c以被引導至第2上推體62b的內側面的狀態配置於第2上推體62b的內側。第4上推體62d以被引導至第3上推體62c的內側面的狀態配置於第3上推體62c的內側。The second push-up body 62b is disposed inside the first push-up body 62a in a state of being guided to the inner side surface of the first push-up body 62a. The third push-up body 62c is disposed inside the second push-up body 62b in a state of being guided to the inner side surface of the second push-up body 62b. The fourth push-up body 62d is disposed inside the third push-up body 62c in a state of being guided to the inner side surface of the third push-up body 62c.

所述上推體62a~上推體62d藉由第1升降驅動裝置62e~第4升降驅動裝置62h,按照事先設定的動作條件而上下移動。於本實施形態中,最初使所有上推體(62a~62d)自支承面61a的高度上升至突出規定量的高度為止。其後,以自外側起按順序,即按第1上推體、第2上推體、第3上推體、第4上推體的順序依次下降至支承面61a的高度以下為止的方式,設定動作條件。再者,動作條件只要設定成對應於拾取對象的半導體晶片t、附著半導體晶片t的黏著片11的品種等的動作即可。The push-up bodies 62a to 62d are moved up and down by the first lift driving device 62e to the fourth lift driving device 62h according to a preset operating condition. In this embodiment, all the pushers (62a to 62d) are raised from the height of the support surface 61a to a height that protrudes by a predetermined amount. Thereafter, in order from the outer side, that is, in the order of the first push-up body, the second push-up body, the third push-up body, and the fourth push-up body in order from the outside to the height of the support surface 61a, Set the operating conditions. In addition, the operation conditions may be set to operations corresponding to the semiconductor wafer t to be picked up, the type of the adhesive sheet 11 to which the semiconductor wafer t is attached, and the like.

另外,於第1上推體62a~第3上推體62c的上端部,如圖4(A)所示,分別設置凸部64、凸部65與凹部66。再者,於圖4(A)及圖4(B)中,對凹部66的形成位置附加斜線,而使與凸部64、凸部65的區別變得明確。於第1上推體62a的形成矩形框狀的上端面的四個角部分別形成凸部64A。另外,於第1上推體62a的矩形框狀的上端面的四個側邊部,以大致均等的間隔分別設置多個凸部65A。而且,在凸部64A與凸部65A之間及凸部65A彼此之間分別設置凹部66A。於第2上推體62b的矩形框狀的上端面的四個角部分別形成凸部64B。另外,於第2上推體62b的矩形框狀的上端面的四個側邊部,以大致均等的間隔分別設置多個凸部65B。而且,在凸部64B與凸部65B之間及凸部64B彼此之間分別設置凹部66B。另外,第2上推體62b的凸部65B與凹部66B的配置相對於第1上推體62a的凸部65A與凹部66A的配置,變成相互不同的關係。於第3上推體62c的矩形框狀的上端面上,與第1上推體62a、第2上推體62b同樣地,亦形成凸部64C、凸部65C與凹部66C。第3上推體62c的凸部65C與凹部66C的配置相對於第2上推體62b的凸部65B與凹部66B的配置,變成相互不同的關係。所述凸部64A~凸部64C、凸部65A~凸部65C的上表面及第4上推體62d的上表面以可在與支承面61a同一平面上支撐黏著片11的方式形成。而且,以由凸部64A~凸部64C、凸部65A~凸部65C的上表面與第4上推體62d的上表面所形成的平面的面精度變成20 μm以下的方式形成。In addition, as shown in FIG. 4 (A), the upper end portions of the first push-up body 62a to the third push-up body 62c are provided with convex portions 64, convex portions 65, and concave portions 66, respectively. In addition, in FIGS. 4 (A) and 4 (B), diagonal lines are added to the positions where the recessed portions 66 are formed to make the differences from the protruding portions 64 and the protruding portions 65 clear. A convex portion 64A is formed on each of the four corner portions of the upper end surface of the first push-up body 62a that form a rectangular frame shape. In addition, a plurality of convex portions 65A are provided on the four side portions of the rectangular frame-shaped upper end surface of the first push-up body 62a at approximately even intervals. Further, a concave portion 66A is provided between the convex portion 64A and the convex portion 65A and between the convex portions 65A. The four corner portions of the rectangular frame-shaped upper end surface of the second push-up body 62b are formed with convex portions 64B, respectively. In addition, a plurality of convex portions 65B are provided on the four side portions of the rectangular frame-shaped upper end surface of the second push-up body 62b at approximately even intervals. Further, recessed portions 66B are provided between the convex portions 64B and 65B and between the convex portions 64B. The arrangement of the convex portions 65B and the recessed portions 66B of the second push-up body 62b is different from the arrangement of the convex portions 65A and the recessed portions 66A of the first push-up body 62a. On the rectangular frame-shaped upper end surface of the third push-up body 62c, like the first push-up body 62a and the second push-up body 62b, convex portions 64C, convex portions 65C, and concave portions 66C are also formed. The arrangement of the convex portions 65C and the concave portions 66C of the third push-up body 62c is different from the arrangement of the convex portions 65B and the concave portions 66B of the second push-up body 62b. The convex surfaces 64A to 64C, the upper surfaces of the convex portions 65A to 65C, and the upper surface of the fourth pusher 62d are formed so as to support the adhesive sheet 11 on the same plane as the support surface 61a. The surface accuracy of a plane formed by the upper surfaces of the convex portions 64A to 64C, the upper surfaces of the convex portions 65A to 65C, and the upper surface of the fourth pusher 62d is 20 μm or less.

另外,設置於側邊部的各凸部(65A~65C)較佳為以沿著側邊部的方向的長度變成0.4 mm以上、2.0 mm以下的方式形成。另外,各凹部(66A~66C)的沿著側邊部的方向的長度可設為與凸部65A~凸部65C的長度相同,亦可不同,但較佳為與凸部65A~凸部65C同樣地,以沿著側邊部的方向的長度變成0.4 mm以上、2.0 mm以下的方式形成。另外,可將鄰接的凹部66A與凹部66B及凹部66B與凹部66C設為如一部分重疊般的配置,但重疊部分的長度較佳為設為沿著側邊部的方向上的凹部66A~凹部66C的長度的20%以下。因此,凹部66A~凹部66C的長度較佳為以相對於凸部65A~凸部65C的長度變成0.8倍以上且1.2倍以下的方式形成。In addition, each convex portion (65A to 65C) provided in the side portion is preferably formed so that the length in the direction along the side portion becomes 0.4 mm or more and 2.0 mm or less. In addition, the length of each recessed portion (66A to 66C) in the direction along the side portion may be the same as or different from the length of the protruding portion 65A to 65C, but it is preferably the same as that of the protruding portion 65A to 65C. Similarly, it is formed so that the length of the direction along a side part may become 0.4 mm or more and 2.0 mm or less. In addition, the adjacent recessed portions 66A and 66B and the recessed portions 66B and 66C may be arranged as overlapping portions, but it is preferable that the length of the overlapping portions is recessed portions 66A to 66C in the direction along the side portion. Less than 20% of the length. Therefore, it is preferable that the length of the recessed portions 66A to 66C is formed so that the length of the recessed portions 65A to 65C becomes 0.8 times or more and 1.2 times or less.

進而,於第1上推體62a~第4上推體62d與支承體61一同支撐黏著片11的狀態下,可使負壓作用於第1上推體62a~第4上推體62d的上端面與黏著片11之間。即,支承體61的開口部61f與內部空間61b連通,在第1上推體62a與開口部61f的邊緣之間存在間隙。另外,於上推體62a~上推體62d彼此之間亦存在間隙。因此,內部空間61b內的負壓穿過該些間隙而作用於第1上推體62a~第4上推體62d的上端面與黏著片11之間。即,以設定成所述壓力範圍的負壓,具體而言,-90 kPa的負壓作用於上頂機構60與黏著片11之間的方式構成。Furthermore, in a state in which the first and second push-up bodies 62a to 62d support the adhesive sheet 11 together with the support body 61, negative pressure can be applied to the first and fourth push-up bodies 62a to 62d. Between the end surface and the adhesive sheet 11. That is, the opening portion 61f of the support body 61 communicates with the internal space 61b, and there is a gap between the first push-up body 62a and the edge of the opening portion 61f. There is also a gap between the push-up bodies 62a to 62d. Therefore, the negative pressure in the internal space 61b passes through these gaps and acts between the upper end surfaces of the first and fourth push-up bodies 62a to 62d and the adhesive sheet 11. That is, it is comprised so that the negative pressure set to the said pressure range, specifically, a negative pressure of -90 kPa acts between the top mechanism 60 and the adhesive sheet 11.

控制裝置70具備存儲部71。於存儲部71中存儲上推體62a~上推體62d的動作條件等封裝裝置1的動作所需的資料。控制裝置70參照存儲於存儲部71中的資料,控制供給裝置10、基板平台20、拾取機構40、封裝機構50、上頂機構60等。 (動作的說明) 繼而,使用圖1及圖5(A)~圖7(B)對封裝裝置1及拾取裝置的動作進行說明。The control device 70 includes a storage unit 71. The storage unit 71 stores data necessary for the operation of the packaging device 1 such as the operating conditions of the push-up bodies 62a to 62d. The control device 70 controls the supply device 10, the substrate stage 20, the pickup mechanism 40, the packaging mechanism 50, the top mechanism 60, and the like with reference to the data stored in the storage unit 71. (Description of Operation) Next, operations of the packaging device 1 and the pick-up device will be described with reference to FIGS. 1 and 5 (A) to 7 (B).

首先,將於黏著片11上附著有多個半導體晶片t的晶圓環12設置於供給裝置10的晶圓台13上。另外,藉由未圖示的基板搬入裝置來將封裝前的基板K載置於基板平台20上。First, a wafer ring 12 having a plurality of semiconductor wafers t adhered to an adhesive sheet 11 is set on a wafer stage 13 of a supply device 10. The substrate K before packaging is placed on the substrate stage 20 by a substrate carrying-in device (not shown).

於該狀態下,拾取機構40的吸附噴嘴41拾取於供給裝置10上被定位在拾取位置上的半導體晶片t並移送至中間平台30上。封裝機構50的封裝工具51接收被移送至中間平台30上的半導體晶片t,並將其封裝於載置在基板平台20上的基板K的規定的封裝位置上。重複執行此種動作,將半導體晶片t依次封裝於基板K的各封裝位置上。In this state, the suction nozzle 41 of the pickup mechanism 40 picks up the semiconductor wafer t positioned at the pickup position on the supply device 10 and transfers it to the intermediate stage 30. The packaging tool 51 of the packaging mechanism 50 receives the semiconductor wafer t transferred to the intermediate stage 30, and packages the semiconductor wafer t at a predetermined packaging position of the substrate K placed on the substrate stage 20. Such operations are repeatedly performed, and the semiconductor wafer t is sequentially packaged at each package position of the substrate K.

再者,於利用拾取裝置的拾取時,即,於吸附噴嘴41拾取半導體晶片t時,上頂機構60如以下般進行動作。When picking up by the pick-up device, that is, when picking up the semiconductor wafer t by the suction nozzle 41, the top mechanism 60 operates as follows.

如圖5(A)所示,若將拾取對象的半導體晶片t定位於上頂機構60的正上方,即拾取位置上,則上頂裝置60藉由支承面61a來支撐黏著片11的下表面。而且,藉由打開開關閥63c,而使規定的負壓(-90 kPa的負壓)作用於抽吸槽61c及抽吸孔61d中來吸附保持黏著片11。As shown in FIG. 5 (A), if the semiconductor wafer t to be picked up is positioned directly above the top-up mechanism 60, that is, at the pick-up position, the top-up device 60 supports the lower surface of the adhesive sheet 11 via the support surface 61a. . Then, by opening the on-off valve 63c, a predetermined negative pressure (negative pressure of -90 kPa) is applied to the suction groove 61c and the suction hole 61d to adsorb and hold the adhesive sheet 11.

若藉由支承面61a來吸附保持黏著片11,則如圖5(B)所示,使吸附噴嘴41下降來抵接於半導體晶片t上,而吸附保持半導體晶片t。When the adhesive sheet 11 is sucked and held by the support surface 61a, as shown in FIG. 5 (B), the suction nozzle 41 is lowered to abut against the semiconductor wafer t, and the semiconductor wafer t is sucked and held.

若吸附噴嘴41吸附半導體晶片t,則如圖5(C)所示,使第1上推體62a~第4上推體62d僅上升事先設定的高度。此時,吸附噴嘴41同步地上升。藉此,黏著片11由第1上推體62a~第4上推體62d上推成凸狀。此時,-90 kPa的負壓作用於黏著片11與支承面61a及第1上推體62a~第4上推體62d的上端面之間。因此,藉由負壓而下拉的力作用於黏著片11中由第1上推體62a~第4上推體62d向上推而傾斜的部分11a上。藉此,於半導體晶片t的外緣部,更具體而言,於半導體晶片t中自第1上推體62a露出的外緣部,欲自半導體晶片t上剝掉的力作用於黏著片11上。藉此,自半導體晶片t的所述外緣部剝離黏著片11。再者,此時半導體晶片t的露出量少,因此即便於半導體晶片t的各邊的整個區域同時開始黏著片t的剝離,亦不會產生半導體晶片t的損傷。When the suction nozzle 41 sucks the semiconductor wafer t, as shown in FIG. 5 (C), the first push-up body 62a to the fourth push-up body 62d are raised only by a predetermined height. At this time, the suction nozzle 41 is raised synchronously. Thereby, the adhesive sheet 11 is pushed up into a convex shape from the first push-up body 62a to the fourth push-up body 62d. At this time, a negative pressure of -90 kPa acts between the adhesive sheet 11 and the upper end surfaces of the support surface 61a and the first push-up bodies 62a to 62d. Therefore, the force of pulling down by the negative pressure acts on the portion 11a of the adhesive sheet 11 which is inclined upward by the first push-up body 62a to the fourth push-up body 62d. Accordingly, at the outer edge portion of the semiconductor wafer t, more specifically, at the outer edge portion of the semiconductor wafer t exposed from the first push-up body 62a, a force to be peeled from the semiconductor wafer t acts on the adhesive sheet 11. on. Thereby, the adhesive sheet 11 is peeled from the said outer edge part of the semiconductor wafer t. In addition, since the exposed amount of the semiconductor wafer t is small at this time, even if peeling of the adhesive sheet t is started at the same time on the entire area of each side of the semiconductor wafer t, the semiconductor wafer t will not be damaged.

另外,此時-90 kPa的負壓亦作用於第1上推體62a的凹部66A中。因此,於半導體晶片t的邊緣中的與凹部66A相向的部分,藉由作用於黏著片11上的負壓,比其他邊緣更促進黏著片11自半導體晶片t上的剝離。圖4(B)是示意性地表示於凹部66中黏著片11的剝離已進行的狀態的平面圖,於凹部66中產生如圖中由符號P所示的大致新月形(由斜線所示的凹部66內的空白部分)的剝離部。再者,於圖4(B)中,在所有凹部(66A、66B、66C)中顯示有剝離部P,但於該階段,大概僅於第1上推體62a的凹部66A的部分中產生剝離部P。另外,該剝離部P以於後述的第2上推體62b開始下降之前的期間內,藉由負壓的作用而朝第2上推體62b伸長的方式擴大。In addition, a negative pressure of -90 kPa also acts on the recessed portion 66A of the first push-up body 62a at this time. Therefore, the portion of the edge of the semiconductor wafer t facing the recessed portion 66A promotes the peeling of the adhesive sheet 11 from the semiconductor wafer t by the negative pressure acting on the adhesive sheet 11 than the other edges. FIG. 4 (B) is a plan view schematically showing a state in which the peeling of the adhesive sheet 11 in the recessed portion 66 has proceeded, and a substantially crescent shape (shown by diagonal lines) indicated by the symbol P in the recessed portion 66 is generated (A blank portion in the recessed portion 66). In addition, in FIG. 4 (B), the peeling part P is shown in all the recessed parts (66A, 66B, 66C), but at this stage, peeling may occur only in the part of the recessed part 66A of the first push-up body 62a Department P. In addition, the peeling portion P is expanded so as to be extended toward the second push-up body 62b by a negative pressure during a period before the second push-up body 62b described later starts to descend.

於自第1上推體62a~第4上推體62d上升起經過規定的待機時間後,如圖6(A)所示,第1上推體62a下降。第1上推體62a下降至第1上推體62a的上端面比支承面61a低規定的高度的位置為止。藉此,第1上推體62a與半導體晶片t分離。藉由第1上推體62a下降,於藉由自身的張力與負壓而下拉的方向,即自半導體晶片t上剝掉的方向上,力作用於黏著片11中的迄今為止由第1上推體62a支撐的部分上。藉由該力,而朝半導體晶片t的中央進行黏著片11的剝離。圖6(A)中所示的狀態是已自半導體晶片t上剝掉由第1上推體62a支撐的黏著片11的狀態。另外,此時負壓亦作用於第2上推體62b的凹部66B中,因此在與凹部66B相向的部分進行黏著片11的剝離。藉此,如圖4(B)所示,於對應於第2上推體62b的凹部66B的部分中產生剝離部P。After a predetermined standby time has elapsed since the first push-up body 62a to the fourth push-up body 62d are raised, as shown in FIG. 6 (A), the first push-up body 62a is lowered. The first push-up body 62a is lowered to a position where the upper end surface of the first push-up body 62a is lower than the support surface 61a by a predetermined height. Thereby, the first push-up body 62a is separated from the semiconductor wafer t. By the first push-up body 62a falling, in the direction pulled down by its own tension and negative pressure, that is, in the direction of peeling from the semiconductor wafer t, a force acts on the adhesive sheet 11 so far from the first On the part supported by the push body 62a. By this force, the adhesive sheet 11 is peeled toward the center of the semiconductor wafer t. The state shown in FIG. 6 (A) is a state where the adhesive sheet 11 supported by the first push-up body 62a has been peeled from the semiconductor wafer t. In addition, at this time, the negative pressure is also applied to the recessed portion 66B of the second push-up body 62b, so that the adhesive sheet 11 is peeled off at a portion facing the recessed portion 66B. Thereby, as shown in FIG.4 (B), the peeling part P is produced in the part corresponding to the recessed part 66B of the 2nd push-up body 62b.

進而,於經過規定的待機時間後,如圖6(B)所示,第2上推體62b下降至第1上推體62a的位置為止。此時,與第1上推體62a下降時同樣地,亦進行黏著片11中的由第2上推體62b支撐的部分的剝離。另外,如圖6(B)所示,在與第3上推體62c的凹部66C相向的部分進行黏著片11的剝離,並產生剝離部P。另外,於進而經過規定的待機時間後,如圖6(C)所示,第3上推體62c下降至第1上推體62a、第2上推體62b的位置為止。此時,與第1上推體62a、第2上推體62b下降時同樣地,亦進行黏著片11中的由第3上推體62c支撐的部分的剝離。Furthermore, after a predetermined standby time has elapsed, as shown in FIG. 6 (B), the second push-up body 62b is lowered to the position of the first push-up body 62a. At this time, similarly to when the first push-up body 62a is lowered, the part of the adhesive sheet 11 supported by the second push-up body 62b is also peeled. In addition, as shown in FIG. 6 (B), the adhesive sheet 11 is peeled off at a portion facing the recessed portion 66C of the third push-up body 62c, and a peeling portion P is generated. In addition, after a predetermined standby time has elapsed, as shown in FIG. 6 (C), the third push-up body 62c descends to the positions of the first push-up body 62a and the second push-up body 62b. At this time, similarly to when the first push-up body 62a and the second push-up body 62b are lowered, the part of the adhesive sheet 11 supported by the third push-up body 62c is also peeled.

於自第3上推體62c下降起經過規定的待機時間後,如圖7(A)所示,第4上推體62d下降至第1上推體62a~第3上推體62c的位置為止。藉此,進行黏著片11中的由第4上推體62d支撐的部分的剝離。圖7(A)中所示的狀態表示該剝離的進行過程。After a predetermined standby time has elapsed after the third push-up body 62c descends, as shown in FIG. 7 (A), the fourth push-up body 62d drops to the positions of the first push-up body 62a to the third push-up body 62c. . Thereby, the part of the adhesive sheet 11 supported by the 4th push-up body 62d is peeled. The state shown in FIG. 7 (A) shows the progress of this peeling.

再者,使各上推體(62a~62d)下降之前的待機時間可設定成相同的時間,亦可設定個別的時間。但是,將該待機時間設定得長會導致生產性下降,因此以考慮生產性來設定為宜。即,於半導體晶片t的封裝步驟中所使用的封裝裝置1中,表示每一小時可封裝的半導體晶片t的數量的單位產能(Unit Per Hour,UPH)是影響生產性的重要的因素。因此,為了謀求生產性的提昇,較佳為UPH的數值高。為了提高該數值,必須於極短的時間內進行一個一個的半導體晶片t的封裝。此時,無法縮短將半導體晶片t加壓接合(有時亦併用加熱)於基板K上的時間,即所謂的接合時間。因此,要求將與半導體晶片t的加壓接合同時並行地執行的半導體晶片t的移送所需要的時間納入接合時間內。再者,所謂移送所需要的時間,是指自吸附噴嘴41位於拾取位置的正上方至朝定位於拾取位置上的半導體晶片t下降、拾取半導體晶片t、移送並載置於中間平台30上為止所需要的時間。In addition, the standby time before lowering each of the pushers (62a to 62d) may be set to the same time, or an individual time may be set. However, setting this waiting time to a long time leads to a decrease in productivity, so it is appropriate to set it in consideration of productivity. That is, in the packaging device 1 used in the packaging step of the semiconductor wafer t, the unit capacity (Unit Per Hour (UPH)) indicating the number of semiconductor wafers t that can be packaged per hour is an important factor affecting productivity. Therefore, in order to improve productivity, the UPH value is preferably high. In order to increase this value, the individual semiconductor wafers t must be packaged in a very short time. At this time, it is not possible to shorten the time for press-bonding (and sometimes heating) the semiconductor wafer t on the substrate K, that is, the so-called bonding time. Therefore, it is required that the time required for transferring the semiconductor wafer t, which is performed in parallel with the pressurization bonding of the semiconductor wafer t, be included in the bonding time. The time required for transfer refers to the time from when the suction nozzle 41 is located directly above the pick-up position to when the semiconductor wafer t positioned at the pick-up position is lowered, the semiconductor wafer t is picked up, and it is transferred and placed on the intermediate platform 30. The time needed.

因此,要求以移送所需要的時間變成接合時間以內的條件設定所述待機時間。例如,當接合時間為1.2秒,位於拾取位置的正上方的吸附噴嘴41下降至半導體晶片t為止的時間及將吸附噴嘴41所拾取的半導體晶片t移送並載置於中間平台30上為止的時間合計為0.5秒時,可用於上推機構62上頂半導體晶片t的時間變成不足1.2秒-0.5秒=0.7秒。於此情況下,必須將所述待機時間設定成不足0.1秒~0.3秒左右。即,待機時間是可設定的範圍因接合時間而被限制成極短的時間的範圍內者,對於拾取裝置要求在該短時間內自半導體晶片t上剝離黏著片11。Therefore, it is required to set the standby time on the condition that the time required for the transfer becomes within the engagement time. For example, when the bonding time is 1.2 seconds, the time until the suction nozzle 41 located directly above the pickup position is lowered to the semiconductor wafer t and the time until the semiconductor wafer t picked up by the suction nozzle 41 is transferred and placed on the intermediate stage 30. When the total time is 0.5 seconds, the time available for pushing the semiconductor wafer t on the push-up mechanism 62 becomes less than 1.2 seconds-0.5 seconds = 0.7 seconds. In this case, the standby time must be set to less than about 0.1 seconds to about 0.3 seconds. That is, the standby time is a range in which the settable range is limited to an extremely short time due to the bonding time, and the pickup device is required to peel the adhesive sheet 11 from the semiconductor wafer t within this short time.

如本實施形態般,使設定成所述壓力範圍的負壓作用於上頂機構60與黏著片11之間,藉此即便將所述待機時間設定成不足0.1秒~0.3秒左右的短時間,於該期間內,亦能夠使僅可自半導體晶片t上剝離上推體62a~上推體62c的支撐被解除的黏著片11的部分的力充分地發揮作用。As in this embodiment, a negative pressure set in the pressure range is applied between the top mechanism 60 and the adhesive sheet 11, so that even if the standby time is set to a short time of less than about 0.1 second to 0.3 second, During this period, it is possible to sufficiently exert only the force that can peel off the portion of the push-up body 62a to the push-up body 62c that supports the released adhesive sheet 11 from the semiconductor wafer t.

再者,於自第4上推體62d下降起經過規定的待機時間後,如圖7(B)所示,使吸附噴嘴41上升,並拾取半導體晶片t。另外,將開關閥63c關閉而停止負壓,第1上推體62a~第4上推體62d上升至原來的高度,即上端與支承面61a一致的高度為止。 (作用效果) 根據此種實施形態的封裝裝置1,具備具有拾取機構40與上頂機構60來構成的拾取裝置,當藉由拾取機構40的吸附噴嘴41而自黏著片11上拾取半導體晶片t時,使用上頂機構60的上推機構62,自黏著片11的下側上頂被拾取的半導體晶片t。於該上頂時,將作用於上頂機構60與黏著片11之間的負壓的大小以錶壓計設定成-85 kPa以下。所謂作用於上頂機構60與黏著片11之間的負壓,具體而言,是指作用於支承體61的抽吸槽61c與抽吸孔61d、及各上推體(62a~62d)與黏著片11之間,上推體62a~上推體62d的凹部66A~凹部66C內的負壓。After a predetermined standby time has elapsed since the fourth push-up body 62d descends, as shown in FIG. 7 (B), the suction nozzle 41 is raised and the semiconductor wafer t is picked up. In addition, the on-off valve 63c is closed to stop the negative pressure, and the first upper pusher 62a to the fourth upper pusher 62d are raised to the original height, that is, the height at which the upper end coincides with the support surface 61a. (Effects and Effects) The packaging device 1 according to this embodiment includes a pickup device having a pickup mechanism 40 and a top-up mechanism 60, and the semiconductor wafer t is picked up from the adhesive sheet 11 by the suction nozzle 41 of the pickup mechanism 40. At this time, using the push-up mechanism 62 of the push-up mechanism 60, the picked-up semiconductor wafer t is lifted from the lower side of the adhesive sheet 11. At the time of this lifting, the magnitude of the negative pressure acting between the lifting mechanism 60 and the adhesive sheet 11 is set to -85 kPa or less with a gauge. The so-called negative pressure acting between the upper mechanism 60 and the adhesive sheet 11 specifically means the suction groove 61c and the suction hole 61d acting on the support body 61, and each of the pushing bodies (62a to 62d) and The negative pressure in the concave portions 66A to 66C of the push-up bodies 62a to 62d between the adhesive sheets 11.

藉由使此種負壓發揮作用,當利用上推機構62自黏著片11的下方上頂半導體晶片t時,可於使多個上推體(62a~62d)支撐半導體晶片t的面積階段性地減少時,追隨支撐面積的減少而自半導體晶片t上剝離黏著片。By making such negative pressure work, when the semiconductor wafer t is lifted up from below the adhesive sheet 11 by the push-up mechanism 62, the area of the semiconductor wafer t can be supported in stages by a plurality of push-up bodies (62a to 62d). When the ground is reduced, the adhesive sheet is peeled from the semiconductor wafer t following the decrease in the support area.

另外,因將所設定的負壓的壓力範圍設為-85 kPa以下,故即便自使多個上推體(62a~62d)中的一個與半導體晶片t分離至下一個上推體分離為止的時間(所述待機時間)為不足0.1秒~0.3秒左右的短時間,於該期間內,亦可自半導體晶片t上剝離上推體62a~上推體62c的支撐被解除的黏著片11的部分。因此,即便是30 μm以下的厚度的半導體晶片,亦可自黏著片11上迅速地剝離,而可防止損害生產性。In addition, since the pressure range of the set negative pressure is set to -85 kPa or less, even if one of the plurality of push-up bodies (62a to 62d) is separated from the semiconductor wafer t until the next push-up body is separated. The time (the standby time) is a short time of less than about 0.1 seconds to about 0.3 seconds. During this period, it is also possible to peel off the pressure-sensitive adhesive sheet 11 whose support of the push-up bodies 62a to 62c is released from the semiconductor wafer t. section. Therefore, even a semiconductor wafer having a thickness of 30 μm or less can be quickly peeled off from the adhesive sheet 11, thereby preventing productivity from being impaired.

另外,於第1上推體62a~第3上推體62c的上端部交替地形成有凸部64、凸部65與凹部66。藉此,設定成所述壓力範圍的負壓(-85 kPa以下的負壓)作用於與設置在凸部64與凸部65之間及凸部65彼此之間的凹部66相向的黏著片11的部位上。因此,在對應於凹部66的黏著片11的部分,可不等待上推體62a~上推體62c的下降(與半導體晶片t的分離),而進行黏著片11自半導體晶片t上的剝離。其結果,當使上推體62a~上推體62c下降時,可更迅速地進行黏著片11自半導體晶片t上的剝離。而且,當上推體62a~上推體62c已開始下降時,在對應於該上推體62a~上推體62c的凹部66的黏著片11的部分進行自半導體晶片t上的剝離。因此,由上推體62a~上推體62c支撐的部分的黏著片11的剝離分成兩次來進行,因此與上推體62a~上推體62c下降後才一齊開始該部分的剝離的情況相比,可格外地減少作用於半導體晶片t上的應力。因此,即便是容易產生破損的厚度薄的半導體晶片t,例如30 μm以下的厚度的半導體晶片t,亦可良好地進行拾取。進而,當自半導體晶片t上剝離對應於凹部66的黏著片11的部分時,藉由凸部64、凸部65,自凹部66的兩側(沿著半導體晶片t的邊的方向的兩側)與中央側的三側支撐半導體晶片t。因此,即便自半導體晶片t上剝掉的方向的力作用於黏著片11上,與在半導體晶片t的周緣部的整個區域的支撐被解除的狀態下力作用於黏著片11上的情況相比,亦可格外地減少半導體晶片t中所產生的應力。In addition, convex portions 64, convex portions 65, and concave portions 66 are alternately formed on the upper end portions of the first push-up body 62a to the third push-up body 62c. As a result, a negative pressure (negative pressure of -85 kPa or less) set in the pressure range acts on the adhesive sheet 11 facing the concave portion 66 provided between the convex portion 64 and the convex portion 65 and between the convex portions 65. On the site. Therefore, in the portion of the adhesive sheet 11 corresponding to the recessed portion 66, the adhesive sheet 11 can be peeled from the semiconductor wafer t without waiting for the push-up bodies 62a to 62c to fall (separation from the semiconductor wafer t). As a result, when the push-up bodies 62a to 62c are lowered, peeling of the adhesive sheet 11 from the semiconductor wafer t can be performed more quickly. When the push-up bodies 62a to 62c have begun to descend, the portion of the adhesive sheet 11 corresponding to the recessed portion 66 of the push-up bodies 62a to 62c is peeled from the semiconductor wafer t. Therefore, the peeling of the adhesive sheet 11 of the portion supported by the push-up bodies 62a to 62c is divided into two, so it is the same as the case where the peel-off of the portion is started after the push-up bodies 62a to 62c have fallen. In addition, the stress acting on the semiconductor wafer t can be reduced particularly. Therefore, even a thin semiconductor wafer t that is prone to damage, such as a semiconductor wafer t having a thickness of 30 μm or less, can be picked up satisfactorily. Furthermore, when the portion of the adhesive sheet 11 corresponding to the recessed portion 66 is peeled from the semiconductor wafer t, both sides of the recessed portion 66 (both sides along the direction of the side of the semiconductor wafer t) are raised by the protruding portions 64 and the protruding portions 65. The semiconductor wafer t is supported on three sides with the center side. Therefore, even if a force in a direction peeled from the semiconductor wafer t acts on the adhesive sheet 11, compared with a case where the force acts on the adhesive sheet 11 in a state where the support of the entire area of the peripheral portion of the semiconductor wafer t is released It is also possible to particularly reduce the stress generated in the semiconductor wafer t.

另外,設置於矩形的第1上推體62a~第3上推體62c的上端部的凹部66的沿著圓周方向的長度,即沿著側邊部的方向的長度以變成0.4 mm以上、2.0 mm以下的方式形成。於凹部66的長度比0.4 mm短的情況下,即便使-85 kPa以下的負壓作用於凹部66內,於黏著片11中負壓發揮作用的面積亦變得過少,而難以良好地形成剝離部P。另一方面,於凹部66的長度比2.0 mm長的情況下,於黏著片11中負壓發揮作用的面積變得過大,當形成剝離部P時存在過度的應力施加至半導體晶片t上而產生破損之虞。藉由將凹部66的長度設為0.4 mm以上、2.0 mm以下,可確保半導體晶片t的支撐性,並確保黏著片11的剝離性。其結果,可抑制施加至半導體晶片t上的應力並良好地形成剝離部P,而可自黏著片11上迅速且良好地剝離半導體晶片t。In addition, the length of the recessed portion 66 provided at the upper end portion of the rectangular first push-up body 62a to the third push-up body 62c along the circumferential direction, that is, the length along the side portion, is 0.4 mm or more and 2.0 Formed below mm. When the length of the recessed portion 66 is shorter than 0.4 mm, even if a negative pressure of -85 kPa or less is applied to the recessed portion 66, the area where the negative pressure acts on the adhesive sheet 11 becomes too small, and it is difficult to form a peel well. Department P. On the other hand, when the length of the recessed portion 66 is longer than 2.0 mm, the area where the negative pressure acts in the adhesive sheet 11 becomes too large, and when the peeling portion P is formed, excessive stress is applied to the semiconductor wafer t and is generated. Risk of breakage. By setting the length of the recessed portion 66 to be 0.4 mm or more and 2.0 mm or less, the supportability of the semiconductor wafer t can be secured, and the peelability of the adhesive sheet 11 can be secured. As a result, the stress applied to the semiconductor wafer t can be suppressed and the peeling portion P can be formed favorably, and the semiconductor wafer t can be quickly and favorably peeled off from the adhesive sheet 11.

另外,將設置於四邊形的第1上推體62a~第3上推體62c的上端部的凹部66的沿著圓周方向的長度,即沿著側邊部的方向的長度相對於凸部65中的沿著側邊部的方向的長度,設定成0.8倍以上且1.2倍以下。於比0.8倍小的情況下,相對於各上推體(62a~62c)的側邊部的長度,形成剝離部P的區域的比例變少。因此,於其後的藉由上推體62a、上推體62b、上推體62c的下降來剝離黏著片11時,成為剝離的起點的剝離部P小,剝離的進行拖延的概率變高。相反地,於比1.2倍大的情況下,相對於各上推體(62a~62c)的側邊部的長度,由凸部64、凸部65支撐的區域的比例變少。因此,當形成剝離部P時施加至半導體晶片t上的應力變大,半導體晶片t的破損的概率變高。另外,藉由以相互不同的位置關係形成凹部66A、凹部66B、凹部66C彼此,而防止剝離部P連續地形成至半導體晶片t的中央為止,並謀求施加至半導體晶片t上的應力的減輕。但是,若凹部66的長度超過1.2倍,則剝離部P容易順著鄰接的凹部66A、凹部66B及凹部66B、凹部66C而擴展至半導體晶片t的中央為止。於是,由相互不同地形成凹部66A、凹部66B、凹部66C彼此所產生的損害的抑制效果下降。因此,較佳為將凹部66設定成凸部65的0.8倍以上且1.2倍以下的長度。In addition, the length in the circumferential direction of the recessed portion 66 provided at the upper end of the first push-up body 62a to the third push-up body 62c of the quadrangle, that is, the length in the direction along the side portion, relative to the convex portion 65 The length in the direction of the side portion is set to be 0.8 times or more and 1.2 times or less. When it is smaller than 0.8 times, the ratio of the area where the peeling part P is formed with respect to the length of the side part of each push-up body (62a-62c) becomes small. Therefore, when the adhesive sheet 11 is peeled by the descending of the push-up body 62a, the push-up body 62b, and the push-up body 62c thereafter, the peeling part P which becomes a starting point of peeling is small, and the probability of delaying the progress of peeling becomes high. Conversely, when the ratio is larger than 1.2 times, the proportion of the area supported by the convex portion 64 and the convex portion 65 with respect to the length of the side portion of each of the push-up bodies (62a to 62c) is reduced. Therefore, when the peeling portion P is formed, the stress applied to the semiconductor wafer t becomes large, and the probability of breakage of the semiconductor wafer t becomes high. In addition, by forming the recessed portions 66A, 66B, and 66C in mutually different positional relationships, the peeling portion P is prevented from being continuously formed up to the center of the semiconductor wafer t, and the stress applied to the semiconductor wafer t is reduced. However, when the length of the recessed portion 66 exceeds 1.2 times, the peeling portion P easily spreads to the center of the semiconductor wafer t along the adjacent recessed portions 66A, 66B, 66B, and 66C. As a result, the effect of suppressing damage caused by forming the recessed portions 66A, 66B, and 66C differently from each other is reduced. Therefore, it is preferable to set the concave portion 66 to a length of 0.8 times or more and 1.2 times or less of the convex portion 65.

(其他實施形態) 再者,本發明並不限定於所述實施形態。例如,於所述封裝形態中,將上頂機構60的第1上推體62a~第4上推體62d的動作設為使第1上推體62a~第4上推體62d一同上升後,自位於外側的第1上推體62a起依次下降的例子,但並不限定於此。例如,亦能夠以越是位於內側的上推體變得越高的方式,使第1上推體62a~第4上推體62d進行上升動作。即,亦可使第1上推體62a~第4上推體62d僅一同上升規定高度後,使第2上推體62b~第4上推體62d進一步上升規定高度,其後使第3上推體62c~第4上推體62d進一步上升規定高度,最後使第4上推體62d進一步上升規定高度。總之,只要以多個上推體(62a~62d)依次與半導體晶片t分離的方式進行動作即可。(Other Embodiments) The present invention is not limited to the above-mentioned embodiments. For example, in the package form, the operations of the first push-up body 62a to the fourth push-up body 62d of the upper mechanism 60 are set to raise the first push-up body 62a to the fourth push-up body 62d together, An example in which the first upward pusher 62a located on the outer side sequentially descends is not limited to this. For example, the first push-up body 62a to the fourth push-up body 62d may be moved upward so that the push-up body located further inside becomes higher. That is, the first push-up body 62a to the fourth push-up body 62d may be raised only by a predetermined height, and then the second push-up body 62b to the fourth push-up body 62d may be further raised to a predetermined height, and then the third push-up body 62b The pusher 62c to the fourth upper pusher 62d are further raised by a predetermined height, and finally the fourth upper pusher 62d is further raised by a predetermined height. In short, it suffices to operate so that a plurality of pushers (62a to 62d) are sequentially separated from the semiconductor wafer t.

另外,於所述實施形態中,作為基板平台,以使基板K於XYθ方向上移動的基板平台20的例子進行了說明,但並不限定於此。例如,亦能夠以如下方式構成:沿著與供給裝置10及中間平台30的排列方向交叉的方向配置一對導軌,於該導軌上將基板K搬送定位至封裝機構50的封裝作業位置上。即,將基板K搬入封裝機構50的封裝作業位置上,並定位於封裝作業位置上,且從封裝作業位置上搬出的搬送部亦包含於基板平台中。Moreover, in the said embodiment, although the example of the substrate stage 20 which moved the board | substrate K in the XY (theta) direction was demonstrated as a board stage, it is not limited to this. For example, a configuration may be adopted in which a pair of guide rails are arranged in a direction crossing the arrangement direction of the supply device 10 and the intermediate platform 30, and the substrate K is transported and positioned on the packaging work position of the packaging mechanism 50 on the guide rails. That is, the substrate K is carried into the packaging operation position of the packaging mechanism 50 and positioned at the packaging operation position, and the transfer section carried out from the packaging operation position is also included in the substrate platform.

(實施例與比較例) 繼而,對本發明的實施例與其評估結果進行敘述。(Examples and Comparative Examples) Next, examples and evaluation results of the present invention will be described.

利用所述實施形態的封裝裝置1,於以下的條件下進行拾取試驗。再者,利用封裝機構50將由拾取機構40所拾取的半導體晶片t配置於載置在基板平台20上的試驗用的玻璃基板上。先將具有黏著性的膜黏附於玻璃基板上,而使所配置的半導體晶片t於基板平台20的移動過程中不動。上頂機構使用圖3中所示的上頂機構60,並以圖5(A)~圖7(B)中所示的動作進行上頂。With the packaging device 1 of the embodiment, a pick-up test was performed under the following conditions. In addition, the semiconductor wafer t picked up by the picking-up mechanism 40 is arrange | positioned on the glass substrate for a test mounted on the substrate stage 20 by the packaging mechanism 50. First, an adhesive film is adhered to the glass substrate, so that the arranged semiconductor wafer t does not move during the movement of the substrate platform 20. The top mechanism uses the top mechanism 60 shown in FIG. 3 and performs the top movement in the operations shown in FIGS. 5 (A) to 7 (B).

自直徑為300 mm的晶圓上拾取50個半導體晶片t,並測定於拾取時產生了破裂的半導體晶片t的數量。具體而言,於拾取前,確認於拾取對象的50個半導體晶片t中無破裂,並清點配置於玻璃基板上的50個半導體晶片t中存在幾個產生了破裂的半導體晶片t,藉此測定於拾取時產生了破裂的半導體晶片t的數量。Fifty semiconductor wafers t were picked up from a wafer having a diameter of 300 mm, and the number of semiconductor wafers t that were cracked during the pickup was measured. Specifically, before picking, confirm that there are no cracks in the 50 semiconductor wafers t to be picked up, and count the number of cracked semiconductor wafers t among the 50 semiconductor wafers t arranged on the glass substrate. The number of semiconductor wafers t that were cracked at the time of pickup.

<試驗條件> ・半導體晶片的大小:3×4 mm ・半導體晶片的厚度:35 μm、25 μm、15 μm這三種 ・作用於上頂機構60與黏著片11之間的負壓的大小:-90 kPa、-88 kPa、-85 kPa、-83 kPa、-80 kPa這五個條件 ・上頂量:1 mm ※上頂量是使圖5(C)中所示的第1上推體62a~第4上推體62d上升的量。 ・待機時間:0.2秒<Test conditions> ・ Semiconductor wafer size: 3 × 4 mm ・ Thickness of semiconductor wafer: 35 μm, 25 μm, and 15 μm Five conditions of 90 kPa, -88 kPa, -85 kPa, -83 kPa, and -80 kPa ・ Upper: 1 mm ~ The amount by which the fourth push-up body 62d rises.・ Standby time: 0.2 seconds

(實施例1) 將所述試驗條件中的負壓的大小設為-90 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例2) 將所述試驗條件中的負壓的大小設為-90 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例3) 將所述試驗條件中的負壓的大小設為-90 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例4) 將所述試驗條件中的負壓的大小設為-88 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例5) 將所述試驗條件中的負壓的大小設為-88 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例6) 將所述試驗條件中的負壓的大小設為-88 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例7) 將所述試驗條件中的負壓的大小設為-85 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例8) 將所述試驗條件中的負壓的大小設為-85 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例9) 將所述試驗條件中的負壓的大小設為-85 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。(Example 1) The magnitude of the negative pressure in the test conditions was set to -90 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 35 μm. The results are shown in Table 1. (Example 2) The magnitude of the negative pressure in the test conditions was set to -90 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 25 μm. The results are shown in Table 1. Example 3 The magnitude of the negative pressure in the test conditions was set to −90 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 15 μm. The results are shown in Table 1. (Example 4) The magnitude of the negative pressure in the test conditions was set to -88 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 35 μm. The results are shown in Table 1. Example 5 The magnitude of the negative pressure in the test conditions was set to −88 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 25 μm. The results are shown in Table 1. (Example 6) The magnitude of the negative pressure in the test conditions was set to -88 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 15 μm. The results are shown in Table 1. (Example 7) The magnitude of the negative pressure in the test conditions was set to -85 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 35 μm. The results are shown in Table 1. (Example 8) The magnitude of the negative pressure in the test conditions was set to -85 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 25 μm. The results are shown in Table 1. (Example 9) The magnitude of the negative pressure in the test conditions was set to -85 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 15 μm. The results are shown in Table 1.

(比較例1) 將所述試驗條件中的負壓的大小設為-83 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例2) 將所述試驗條件中的負壓的大小設為-83 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例3) 將所述試驗條件中的負壓的大小設為-83 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例4) 將所述試驗條件中的負壓的大小設為-80 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例5) 將所述試驗條件中的負壓的大小設為-80 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例6) 將所述試驗條件中的負壓的大小設為-80 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。Comparative Example 1 The magnitude of the negative pressure in the test conditions was set to -83 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 35 μm. The results are shown in Table 1. Comparative Example 2 The magnitude of the negative pressure in the test conditions was set to -83 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 25 μm. The results are shown in Table 1. (Comparative Example 3) The magnitude of the negative pressure in the test conditions was set to -83 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 15 μm. The results are shown in Table 1. Comparative Example 4 The magnitude of the negative pressure in the test conditions was set to -80 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 35 μm. The results are shown in Table 1. (Comparative Example 5) The magnitude of the negative pressure in the test conditions was set to -80 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 25 μm. The results are shown in Table 1. (Comparative Example 6) The magnitude of the negative pressure in the test conditions was set to -80 kPa, and a pickup test was performed using a semiconductor wafer t having a thickness of 15 μm. The results are shown in Table 1.

[表1] [Table 1]

以上,對本發明的實施形態及實施例、比較例進行了說明,但該些實施形態及實施例、比較例並不意圖限定發明的範圍。所述新的實施形態能夠以其他各種形態來實施,於不脫離發明的主旨的範圍內,可進行各種省略、替換、變更。該些實施形態或其變形包含於發明的範圍或主旨中,並且包含於專利申請的範圍中所記載的發明中。The embodiments, examples, and comparative examples of the present invention have been described above, but these embodiments, examples, and comparative examples are not intended to limit the scope of the invention. The new embodiment can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments or modifications thereof are included in the scope or spirit of the invention, and are included in the invention described in the scope of the patent application.

1‧‧‧封裝裝置1‧‧‧Packaging device

10‧‧‧供給裝置10‧‧‧ supply device

11‧‧‧黏著片11‧‧‧ Adhesive sheet

11a‧‧‧傾斜的部分11a‧‧‧inclined part

12‧‧‧晶圓環12‧‧‧wafer ring

13‧‧‧晶圓台13‧‧‧Wafer Table

20‧‧‧基板平台20‧‧‧ substrate platform

30‧‧‧中間平台30‧‧‧ intermediate platform

40‧‧‧拾取機構40‧‧‧Pick up mechanism

41‧‧‧吸附噴嘴41‧‧‧Adsorption nozzle

50‧‧‧封裝機構50‧‧‧Packaging mechanism

51‧‧‧封裝工具51‧‧‧Packaging tools

60‧‧‧上頂機構/上頂裝置60‧‧‧Upper mechanism / upper device

61‧‧‧支承體61‧‧‧Support

61a‧‧‧支承面61a‧‧‧bearing surface

61b‧‧‧內部空間61b‧‧‧Internal space

61c‧‧‧抽吸槽61c‧‧‧Suction trough

61d‧‧‧抽吸孔61d‧‧‧suction hole

61e‧‧‧連通槽61e‧‧‧ communication slot

61f‧‧‧開口部61f‧‧‧ opening

62‧‧‧上推機構62‧‧‧ Push up mechanism

62a‧‧‧第1上推體62a‧‧‧The first push up

62b‧‧‧第2上推體62b‧‧‧ 2nd push up

62c‧‧‧第3上推體62c‧‧‧3rd Push Up

62d‧‧‧第4上推體62d‧‧‧4th push up

62e‧‧‧升降驅動裝置62e‧‧‧Lifting drive

62f‧‧‧升降驅動裝置62f‧‧‧Lifting drive device

62g‧‧‧升降驅動裝置62g‧‧‧Lifting drive device

62h‧‧‧升降驅動裝置62h‧‧‧Lifting drive

63‧‧‧抽吸泵63‧‧‧Suction pump

63a‧‧‧真空配管63a‧‧‧vacuum piping

63b‧‧‧壓力控制裝置(負壓調整機構)63b‧‧‧Pressure control device (negative pressure adjustment mechanism)

63c‧‧‧開關閥63c‧‧‧On-off valve

63d‧‧‧壓力檢測器63d‧‧‧Pressure Detector

64、64A、64B、64C‧‧‧凸部64, 64A, 64B, 64C‧‧‧ convex

65、65A、65B、65C‧‧‧凸部65, 65A, 65B, 65C‧‧‧ convex

66、66A、66B、66C‧‧‧凹部66, 66A, 66B, 66C ‧‧‧ recess

70‧‧‧控制裝置70‧‧‧control device

71‧‧‧存儲部71‧‧‧Storage Department

P‧‧‧剝離部P‧‧‧Peeling Department

K‧‧‧基板K‧‧‧ substrate

t‧‧‧半導體晶片t‧‧‧semiconductor wafer

W‧‧‧晶圓W‧‧‧ Wafer

X、Y、Z、θ‧‧‧方向X, Y, Z, θ‧‧‧ directions

圖1是表示實施形態的半導體晶片的封裝裝置的概略構成的側面圖。 圖2是表示實施形態的半導體晶片的拾取裝置的上頂機構的立體圖。 圖3是表示圖2中所示的上頂機構的概略剖面圖。 圖4(A)及圖4(B)是表示圖3中所示的上推機構的上推體的平面圖。 圖5(A)至圖5(C)是表示實施形態的拾取裝置的動作的剖面圖。 圖6(A)至圖6(C)是表示實施形態的拾取裝置的動作的剖面圖。 圖7(A)及圖7(B)是表示實施形態的拾取裝置的動作的剖面圖。FIG. 1 is a side view showing a schematic configuration of a packaging device for a semiconductor wafer according to the embodiment. FIG. 2 is a perspective view showing a top mechanism of a semiconductor wafer pickup device according to the embodiment. FIG. 3 is a schematic cross-sectional view showing the top mechanism shown in FIG. 2. 4 (A) and 4 (B) are plan views showing a push-up body of the push-up mechanism shown in FIG. 3. 5 (A) to 5 (C) are cross-sectional views showing operations of the pickup device according to the embodiment. 6 (A) to 6 (C) are cross-sectional views showing operations of the pickup device according to the embodiment. 7 (A) and 7 (B) are cross-sectional views showing the operation of the pickup device according to the embodiment.

Claims (7)

一種半導體晶片的拾取裝置,其是將附著保持於黏著片上的半導體晶片自所述黏著片上拾取的半導體晶片的拾取裝置,其特徵在於:包括 拾取機構,自所述黏著片上拾取所述半導體晶片; 上頂機構,具有使軸心變成相同來配置且相互移動自如地設置於軸心方向上的多個上推體,自與所述半導體晶片相反側,使負壓作用於由所述拾取機構所拾取的所述半導體晶片於所述黏著片中所在的部分,當所述半導體晶片由所述拾取機構拾取時,藉由所述多個上推體來上頂所述半導體晶片;以及 負壓調整機構,將所述負壓的大小以錶壓計設定成-85 kPa以下。A pick-up device for a semiconductor wafer, which is a pick-up device for picking up a semiconductor wafer adhered and held on an adhesive sheet from the adhesive sheet, characterized in that it includes a pick-up mechanism for picking up the semiconductor wafer from the adhesive sheet; The top mechanism has a plurality of pushers arranged in the same axis direction and arranged freely in the direction of the axis, and the negative pressure acts on the pickup mechanism from the side opposite to the semiconductor wafer. A portion of the picked-up semiconductor wafer in the adhesive sheet, when the semiconductor wafer is picked up by the pickup mechanism, the semiconductor wafer is pushed up by the plurality of push-up bodies; The mechanism sets the magnitude of the negative pressure to -85 kPa or less with a gauge. 如申請專利範圍第1項所述的半導體晶片的拾取裝置,其中所述多個上推體具有配置於中央的角柱狀的上推體、及使軸心與所述角柱狀的上推體變成相同來配置的至少一個角筒狀的上推體。The pick-up device for a semiconductor wafer according to item 1 of the scope of patent application, wherein the plurality of push-up bodies include a push-up body having an angular columnar shape arranged at the center, and the shaft center and the push-up body having the angular-pillar shape are changed into At least one rectangular cylindrical push-up body arranged in the same way. 如申請專利範圍第2項所述的半導體晶片的拾取裝置,其中所述角筒狀的上推體設置有多個,且使軸心變成相同來多重地配置而成。The semiconductor wafer pick-up device according to item 2 of the scope of the patent application, wherein the angular cylindrical push-up bodies are provided in a plurality, and the shaft centers are made the same and multiplely arranged. 如申請專利範圍第2項或第3項所述的半導體晶片的拾取裝置,其中所述角筒狀的上推體是於其上端部沿著圓周方向交替地設置凸部與凹部而成。According to the second or third aspect of the patent application scope of the application for picking up a semiconductor wafer, the rectangular cylindrical push-up body is formed by alternately providing convex portions and concave portions along a circumferential direction at an upper end portion thereof. 如申請專利範圍第4項所述的半導體晶片的拾取裝置,其中相對於所述凸部的沿著所述圓周方向的長度,將所述凹部的沿著所述圓周方向的長度設定成0.8倍以上且1.2倍以下。The pickup device for a semiconductor wafer according to item 4 of the scope of patent application, wherein the length of the concave portion in the circumferential direction is set to 0.8 times the length of the convex portion in the circumferential direction. Above and below 1.2 times. 一種半導體晶片的封裝裝置,其特徵在於:包括 供給裝置,對附著保持半導體晶片的黏著片進行保持; 基板平台,載置基板; 拾取裝置,自所述供給裝置所保持的所述黏著片上拾取所述半導體晶片;以及 封裝機構,將由所述拾取裝置所取出的所述半導體晶片封裝於所述基板上;且 所述拾取裝置為如申請專利範圍第1項至第5項中任一項所述的拾取裝置。A packaging device for a semiconductor wafer, comprising: a supply device for holding an adhesive sheet attached to and holding the semiconductor wafer; a substrate platform on which a substrate is placed; and a pickup device for picking up a place from the adhesive sheet held by the supply device. The semiconductor wafer; and a packaging mechanism for packaging the semiconductor wafer taken out by the pick-up device on the substrate; Pickup device. 一種半導體晶片的封裝方法,其是將附著保持於黏著片上的半導體晶片自所述黏著片上拾取,並將所拾取的半導體晶片封裝於基板上的半導體晶片的封裝方法,其特徵在於: 當藉由自所述黏著片上拾取所述半導體晶片的拾取機構而自所述黏著片上拾取所述半導體晶片時,自與所述半導體晶片相反側,使負壓作用於所述黏著片上,並且藉由使軸心變成相同來配置且相互移動自如地設置於軸心方向上的多個上推體來上頂所述半導體晶片之際, 將所述負壓的大小以錶壓計設定成-85 kPa以下。A method for packaging a semiconductor wafer, which is a method for packaging a semiconductor wafer attached to and held on an adhesive sheet from the adhesive sheet, and packaging the picked-up semiconductor wafer on a substrate. The method is characterized by: When a pickup mechanism that picks up the semiconductor wafer from the adhesive sheet and picks up the semiconductor wafer from the adhesive sheet, a negative pressure is applied to the adhesive sheet from the side opposite to the semiconductor wafer, and the shaft is made by When the cores are the same, a plurality of push-up bodies arranged in the axial center direction and arranged to move freely are used to lift the semiconductor wafer, and the magnitude of the negative pressure is set to -85 kPa or less with a gauge.
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