TW201925528A - Light irradiation apparatus and thin film forming apparatus capable of finely activating an indium oxide precursor through heating the substrate - Google Patents

Abstract

The present invention provides a light irradiation apparatus and a thin film forming apparatus capable of finely activating an indium oxide precursor. A substrate (W) on which a coating film including an indium oxide precursor is formed is irradiated with ultraviolet light from a plurality of excimer lamps (51). The irradiation interval d between the plurality of excimer lamps (51) and the substrate (W) is significantly shorter than the arrangement interval (p) of the plurality of excimer lamps (51). The irradiation interval (d) is 2 mm or more and 10 mm or less. The space between the plurality of excimer lamps (51) and the substrate (W) is set as an atmospheric environment. By sliding the substrate (W) relative to the plurality of excimer lamps (51), whereby the ultraviolet ray is uniformly irradiated onto the coating film on the substrate (W) in an atmosphere containing oxygen, and thus the indium oxide precursor contained in the coating film is finely optically activated.

Description

Light irradiation device and film forming device

The present invention relates to a light irradiation device that irradiates ultraviolet light on a substrate on which a coating film containing an indium oxide precursor is formed for semiconductor use to optically activate the indium oxide precursor, and a thin film forming device including the light irradiation device .

A sputtering technique is typically used when forming a thin film of a metal oxide such as indium oxide. In the sputtering technique, ions such as argon are collided with a target in a vacuum chamber, and the particles that have been printed are deposited on the surface of the substrate to form a thin film. However, in addition to the apparatus which requires a high vacuum, the sputtering technique has a drawback in that when a metal oxide film is formed into a film, oxygen vacancy occurs and the characteristics of the film are degraded. Further, in the sputtering technique, there is also a problem that it is difficult to adjust the composition ratio of the film.

Therefore, a liquid phase method for producing a film of a metal oxide is being studied. For example, Patent Document 1 and Patent Document 2 propose a technique in which a composition containing an indium oxide precursor is applied onto a substrate, and the composition is irradiated with ultraviolet rays of a predetermined wavelength range, and then the composition is heated by heat. Converted to a layer containing indium oxide. [Prior Art Document] [Patent Literature]

[Patent Document 1] International Publication No. 2011/073005 [Patent Document 2] International Publication No. 2012/062575

[Problems to be Solved by the Invention] The composition containing the indium oxide precursor is irradiated with ultraviolet rays in order to optically activate the indium oxide precursor. Patent Document 1 and Patent Document 2 disclose that ultraviolet rays are irradiated using a low-pressure mercury lamp. However, since the energy of the ultraviolet ray irradiated from the low pressure mercury lamp is low, there is a problem that the indium oxide precursor cannot be sufficiently activated.

The present invention has been made in view of the above problems, and an object thereof is to provide a light irradiation device and a thin film forming device which can activate a fine indium oxide precursor well. [Technical means to solve the problem]

In order to solve the above problems, the invention of the first aspect of the invention is a light irradiation device which irradiates ultraviolet light on a substrate on which a coating film containing an indium oxide precursor is formed to optically activate the indium oxide precursor, and is characterized in that it includes a plurality of rods. Excimer lamps arranged in parallel with each other along a predetermined direction; and a moving portion for relatively moving the substrate along the predetermined direction with respect to the plurality of the excimer lamps; and a plurality of the excimer The irradiation interval between the lamp and the substrate moved by the moving portion is shorter than the arrangement interval of the plurality of excimer lamps.

Further, the invention of the invention is the light irradiation device according to the invention of the first aspect, characterized in that the irradiation interval is 2 mm or more and 10 mm or less.

Further, the invention of the invention is the light irradiation device according to the invention of the first aspect or the technical means 2, wherein the moving unit reciprocates the substrate with respect to the plurality of excimer lamps.

Further, the invention of the invention is the light irradiation device according to any one of the technical means 1 to 3, characterized in that the plurality of the excimer lamps and the movement by the moving portion are An environment containing oxygen is provided between the substrates.

Further, the invention of the invention is the light irradiation device according to the invention of the fourth aspect, characterized in that the oxygen concentration in the environment is 15% or more and 20% or less.

Further, the invention of the sixth aspect of the invention is a thin film forming apparatus for forming a thin film containing indium oxide, comprising: a coating processing unit that applies a coating liquid containing an indium oxide precursor onto a substrate to form a coating on the substrate a film; the light irradiation device according to any one of the technical means 1 to 5; and a heat treatment unit that heats the substrate that optically activates the indium oxide precursor by the light irradiation device The indium oxide precursor is thermally activated.

According to a fourth aspect of the invention, in the film forming apparatus according to the invention of the sixth aspect of the invention, further comprising: a loading/unloading unit, loading an unprocessed substrate, and carrying out the processed substrate; and transporting the robot The loading/unloading unit, the coating processing unit, the heat treatment unit, and the light irradiation device transport the substrate; and the loading/unloading unit, the coating processing unit, the heat treatment unit, and the storage unit are disposed around the transfer robot The light irradiation device is described.

According to a third aspect of the invention, there is provided a film forming apparatus according to the invention of the sixth aspect, further comprising: a loading unit that carries an unprocessed substrate; and a carrying unit that carries out the processed substrate; and the first transport robot The loading unit, the coating processing unit, and the light irradiation device transport the substrate; and the second transfer robot transports the substrate to the light irradiation device, the heat treatment unit, and the carry-out unit; and the first The light irradiation device is disposed between the transfer robot and the second transfer robot. [Effects of the Invention]

According to the inventions of the technical means 1 to 8, the plurality of rod-shaped excimer lamps are included, and the irradiation intervals of the plurality of excimer lamps and the substrate moved by the moving portion are shorter than the arrangement intervals of the plurality of excimer lamps. Therefore, an excimer lamp having a high energy of ultraviolet rays emitted can be used to cause the indium oxide precursor to be well activated.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First Embodiment> Fig. 1 is a view showing an overall arrangement structure of a thin film forming apparatus of the present invention. The thin film forming apparatus 1 of the present invention is a device for forming a thin film containing indium oxide on the surface of a substrate. The substrate to be processed may be a glass substrate or a semiconductor wafer (a rectangular glass substrate in the present embodiment). Further, the shape or size of the substrate to be processed is not particularly limited, and may be an appropriate shape or size. The film forming apparatus 1 includes a loader/unloader 20, a coating processing unit 30, a heat treatment unit 40, a light irradiation processing unit 50, and a transfer robot 10. In the first embodiment, a so-called cluster tool type layout in which the loader/unloader 20, the coating processing unit 30, the heat treatment unit 40, and the light irradiation processing unit 50 are disposed around the transport robot 10 is employed. . In addition, in each of FIG. 1 and subsequent figures, in order to make it easy to understand, it is necessary to exaggerate or simplify the dimension or number of each part as needed.

The loader/unloader 20 is a loading/unloading unit that carries an unprocessed substrate into the film forming apparatus 1 and carries out the film forming process from the film forming apparatus 1 . The loader/unloader 20 includes a storage unit that houses an unprocessed and processed substrate, and a transfer robot that transfers the substrate to the transfer robot 10 (all of which are not shown).

The coating treatment unit 30 is a treatment unit that applies a coating liquid containing an indium oxide precursor onto the surface of the substrate to form a coating film of the coating liquid on the substrate. The coating processing unit 30 may be, for example, a slit coater that scans a substrate that is held in a stationary state at a fixed speed by a slit nozzle that ejects the coating liquid, or rotates the substrate while rotating the substrate. A spin coater or the like that ejects the coating liquid from the center of rotation to spread the coating liquid on the surface of the substrate.

The heat treatment unit 40 is a treatment unit that heats the substrate that optically activates the indium oxide precursor contained in the coating film by the light irradiation treatment unit 50 to thermally activate the indium oxide precursor. As the heat treatment unit 40, for example, a heat treatment furnace that heats the substrate by blowing hot air can be used. The heat treatment portion 40 heats the substrate to about 350 °C.

The transport robot 10 and the loader/unloader 20, the coating processing unit 30, the heat treatment unit 40, and the light irradiation processing unit 50 transfer the substrates to sequentially transport the substrates to the processing units.

FIG. 2 is a view showing a configuration of the light irradiation processing unit 50. The light irradiation treatment unit 50 is a light irradiation device according to the present invention, which irradiates ultraviolet light on a substrate on which a coating film containing an indium oxide precursor is formed to optically activate the indium oxide precursor. The light irradiation processing unit 50 includes a plurality of excimer lamps 51 and a moving portion 55 that moves the substrate W.

A plurality of (three in the first embodiment) excimer lamps 51 are rod-shaped lamps. In the first embodiment, three excimer lamps 51 are arranged such that the longitudinal direction of each excimer lamp 51 is parallel to each other in the horizontal direction. The excimer lamp 51 is a lamp that emits a specific spectrum of ultraviolet rays (accurately, vacuum ultraviolet (VUV)) when the discharge gas excited by the discharge plasma returns to the base state. The excimer lamp 51 of the present embodiment emits vacuum ultraviolet rays having a wavelength of 172 nm.

The moving unit 55 includes a plurality of conveying rollers 56 and a driving unit 57. The plurality of transport rollers 56 are arranged below the plurality of excimer lamps 51 such that their respective longitudinal directions are parallel to each other in the horizontal direction. The drive unit 57 rotates the plurality of transport rollers 56 in synchronization. The plurality of conveying rollers 56 are rotated in the forward direction or the reverse direction by the driving portion 57, whereby the substrate W supported by the plurality of conveying rollers 56 is horizontally (that is, plural as shown by an arrow AR2 in FIG. 2) The alignment direction of the excimer lamp 51 is slidably moved. Further, the diameter and the number of the plurality of conveying rollers 56 can be set to an appropriate diameter and number corresponding to the size of the substrate W.

FIG. 3 is an enlarged view of the vicinity of a plurality of excimer lamps 51. The plurality of excimer lamps 51 are arranged in parallel with each other at equal intervals in the horizontal direction. The arrangement interval p of the plurality of excimer lamps 51 is 30 mm to 60 mm. The arrangement interval p refers to the distance between the centers of the adjacent excimer lamps 51. Further, each of the rod-shaped excimer lamps 51 has a diameter of about 20 mm.

On the other hand, the irradiation interval d between the plurality of excimer lamps 51 and the substrate W moved by the moving portion 55 is 2 mm or more and 10 mm or less. That is, the irradiation interval d between the plurality of excimer lamps 51 and the substrate W moved by the moving portion 55 is significantly shorter than the arrangement interval p of the plurality of excimer lamps 51. In addition, strictly speaking, the irradiation interval d is the interval between the lower end of the outer wall surface of the excimer lamp 51 and the upper surface of the substrate W when the substrate W is present under the excimer lamp 51 by the moving portion 55. The three excimer lamps 51 are arranged in the horizontal direction, and the substrate W is moved in the horizontal direction by the moving portion 55. Therefore, each of the three excimer lamps 51 has the same irradiation interval d as the substrate W.

Further, an environment adjustment mechanism 59 is provided in the vicinity of the outer wall surface of each excimer lamp 51. The environment adjustment mechanism 59 includes an exhaust mechanism and an oxygen supply mechanism (not shown), and can adjust the environment of the space between the corresponding excimer lamp 51 and the substrate W. Further, in the present embodiment, the environment adjustment mechanism 59 does not perform special environmental adjustment, and the space between the plurality of excimer lamps 51 and the substrate W is an atmospheric environment.

Next, the processing procedure in the thin film forming apparatus 1 having the above configuration will be described. FIG. 4 is a flowchart showing a processing procedure in the thin film forming apparatus 1.

First, the unprocessed substrate W is carried into the film forming apparatus 1 (step S1). Specifically, the unprocessed substrate W is carried into the loader/unloader 20 from the outside of the film forming apparatus 1. A pattern of an element such as a transistor is formed on the surface of the substrate W before being carried into the loader/unloader 20. The surface cleaning process of the substrate W may be performed first as a process of loading the substrate W into the loader/unloader 20. As such a cleaning treatment, a chemical liquid for cleaning the surface of the substrate W by a chemical liquid or a brush for mechanically removing a contaminant from the surface of the substrate W by a brush can be exemplified.

The unprocessed substrate W carried into the loader/unloader 20 is received by the transfer robot 10 and carried into the coating processing unit 30. Further, when the surface cleaning treatment as described above is not performed, the substrate W can be carried into the light irradiation treatment portion 50 before being carried into the coating treatment portion 30, and the surface of the substrate W can be irradiated with ultraviolet rays from the excimer lamp 51. Thereby, the pollutants attached to the surface are decomposed and removed.

The substrate W loaded into the coating processing unit 30 is subjected to coating processing (step S2). The coating treatment unit 30 applies a coating liquid containing an indium oxide precursor onto the surface of the substrate W to form a coating film of the coating liquid on the substrate W. Here, the term "indium oxide precursor" means a substance which is changed to indium oxide by activation, and examples thereof include an indium halide alkoxide (in the formula InX(OR) ₂ wherein R is an alkyl group and/or an alkane. Alkoxy group, X is F, Cl, Br or I). The indium oxide precursor is dispersed in a solvent or a dispersion medium to form a coating liquid. As the solvent or dispersion medium, an alcohol, toluene, xylene, diethyl ether or the like can be used.

The coating treatment unit 30 applies the coating liquid onto the substrate W to form a coating film. A coating film containing an indium oxide precursor was formed on the substrate W with the same film thickness. The coating film immediately after application in the coating treatment unit 30 is a film in a wet state containing a large amount of solvent. Therefore, the coating film can be evaporated by the coating treatment unit 30 to evaporate the solvent contained in the coating film. Since the solvent contained in the coating film is volatile, it evaporates in a relatively short period of time even under normal temperature and normal pressure.

Then, the transport robot 10 carries out the substrate W on which the coating film is formed from the coating processing unit 30 and carries it into the light irradiation processing unit 50. The light irradiation treatment unit 50 irradiates the coating film formed on the substrate W with ultraviolet rays to optically activate the indium oxide precursor contained in the coating film (step S3).

The substrate W carried into the light irradiation processing unit 50 by the transport robot 10 is supported by a plurality of transport rollers 56. Further, the drive unit 57 rotates the plurality of transport rollers 56 to slide the substrate W in the horizontal direction. In the first embodiment, the substrate W is moved from one side of the array area of the plurality of excimer lamps 51 to the other side, and the substrate W is moved from the other side to the side. Move sideways. That is, the moving unit 55 reciprocates the substrate W with respect to the plurality of excimer lamps 51. Further, in the present embodiment, the substrate W is reciprocated once with respect to the plurality of excimer lamps 51, but the number of round trips can be set to an appropriate number of times.

Further, the plurality of excimer lamps 51 emit vacuum ultraviolet rays having a wavelength of 172 nm. The moving portion 55 reciprocates the substrate W with respect to the plurality of excimer lamps 51, whereby the irradiation region of the ultraviolet rays from the respective excimer lamps 51 is scanned along the moving direction of the substrate W on the upper surface of the substrate W. Thereby, the coating film formed on the substrate W is irradiated with ultraviolet rays. The indium oxide precursor contained in the coating film is optically activated by irradiating the coating film with ultraviolet rays.

The moving speed of the substrate W moved by the moving portion 55 is, for example, 0.5 m/min. The substrate W is reciprocated with respect to the three-submolecular lamp 51 at this moving speed, whereby the total irradiation time from the three excimer lamps 51 to the respective regions on the upper surface of the substrate W becomes about 40 seconds to 60 seconds.

However, in order to satisfactorily activate the indium oxide precursor contained in the coating film, it is necessary to irradiate the coating film with ultraviolet rays in an atmosphere containing oxygen. Therefore, in the present embodiment, ultraviolet irradiation is performed in a state where the space between the plurality of excimer lamps 51 and the substrate W is an atmospheric environment. On the other hand, the vacuum ultraviolet ray having a wavelength of 172 nm radiated from the excimer lamp 51 has a property of being absorbed by oxygen. Therefore, the irradiation interval d between the plurality of excimer lamps 51 and the substrate W moved by the moving portion 55 is shorter than the arrangement interval p of the plurality of excimer lamps 51, and is set to 2 mm or more and 10 mm or less. When the irradiation interval d exceeds 10 mm, the vacuum ultraviolet rays radiated from the excimer lamp 51 are almost absorbed by the oxygen present in the atmosphere between the excimer lamp 51 and the substrate W without reaching the coating film on the substrate W. When the irradiation interval d is 10 mm or less, even if the environment between the excimer lamp 51 and the substrate W is oxygen-containing, the vacuum ultraviolet rays emitted from the excimer lamp 51 are not absorbed at all and can reach the coating film on the substrate W. on. Further, when the irradiation interval d is less than 2 mm, the excimer lamp 51 and the substrate W are too close to each other, and there is a concern that the upper surface of the substrate W and a part of the excimer lamp 51 are in contact with each other during movement. For this reason, the irradiation interval d between the plurality of excimer lamps 51 and the substrate W is limited to 2 mm or more and 10 mm or less.

Further, since the irradiation interval d is significantly shorter than the arrangement interval p of the plurality of excimer lamps 51, the irradiation regions of the ultraviolet rays from the plurality of excimer lamps 51 on the upper surface of the substrate W become discrete. Therefore, in the present embodiment, the substrate W is slidably moved with respect to the plurality of excimer lamps 51, whereby the ultraviolet rays are uniformly irradiated onto the entire surface of the upper surface of the substrate W. More specifically, the entire substrate W is slidably moved back and forth so that the irradiation time of the entire surface of the upper surface of the substrate W is the same from each of the plurality of excimer lamps 51. Thereby, not only the irradiation time of the ultraviolet rays is the same on the entire upper surface of the substrate W but also the irradiation conditions of the entire surface of the upper surface of the substrate W even if there is a variation in the irradiation intensity in the plurality of excimer lamps 51. It has also become the same. The indium oxide precursor contained in the coating film is favorably optically activated by uniformly irradiating ultraviolet rays on the coating film on the substrate W in an atmosphere containing oxygen. Further, when the coating film is irradiated with ultraviolet rays, it is preferable to suppress the heat generation of the excimer lamp 51, for example, so that the substrate W is not excessively heated.

After that, the transport robot 10 carries out the substrate W whose ultraviolet irradiation treatment has been completed from the light irradiation processing unit 50 and carries it into the heat treatment unit 40. The heat treatment unit 40 heat-processes the substrate W to thermally activate the indium oxide precursor contained in the coating film on the substrate W (step S4). The heat treatment in the heat treatment portion 40 is also performed in an atmosphere, that is, an environment containing oxygen. The heat treatment unit 40 heats the substrate W at about 350 ° C for about 30 minutes to 1 hour. The coating film on the substrate W is heated in an atmosphere containing oxygen to thermally activate the indium oxide precursor contained in the coating film to form indium oxide. As a result, a film containing indium oxide is formed on the substrate W by the series of processes.

After the completion of the heat treatment, the transfer robot 10 takes out the substrate W from the heat treatment unit 40 and reloads it into the loader/unloader 20. Then, the processed substrate W is carried out from the loader/unloader 20 to the outside of the film forming apparatus 1 to complete a series of film formation processes for the substrate W.

In the first embodiment, the coating film containing the indium oxide precursor on the substrate W is irradiated with ultraviolet rays using the excimer lamp 51. Since the energy of the ultraviolet light emitted from the excimer lamp 51 is higher than that of the low pressure mercury lamp, it is suitable for optically activating the indium oxide precursor contained in the coating film. However, the vacuum ultraviolet ray having a wavelength of 172 nm radiated from the excimer lamp 51 has a property of being absorbed by oxygen. Therefore, from the viewpoint of the ultraviolet irradiation efficiency of the excimer lamp 51, it is preferable that oxygen is not present between the plurality of excimer lamps 51 and the substrate W. On the other hand, in order to activate the indium oxide precursor contained in the coating film satisfactorily, it is necessary to irradiate the coating film with ultraviolet rays in an atmosphere containing oxygen. That is, from the viewpoint of the step, an environment containing oxygen is required, but from the viewpoint of ultraviolet irradiation efficiency, an environment containing no oxygen is preferable.

In order to satisfy the above-mentioned opposite requirements, ultraviolet irradiation is performed in a state where the space between the plurality of excimer lamps 51 and the substrate W is an atmospheric environment (oxygen concentration is approximately 20%). In the case of an atmospheric environment, since about 20% of oxygen is contained, the indium oxide precursor contained in the coating film can be favorably activated. In the case of an atmospheric environment having an oxygen concentration of about 20%, the irradiation interval d between the excimer lamp 51 and the substrate W is set to 10 mm or less to bring the two into close proximity, whereby the vacuum ultraviolet rays emitted from the excimer lamp 51 are emitted. It is not absorbed at all and can reach the coating film on the substrate W.

Further, when the plurality of excimer lamps 51 are brought close to the substrate W and the irradiation interval d is significantly shorter than the arrangement interval p of the plurality of excimer lamps 51, the irradiation range of each of the excimer lamps 51 is limited, so that the substrate W is made The sliding movement is performed with respect to the plurality of excimer lamps 51. Thereby, the ultraviolet ray is uniformly irradiated onto the coating film on the substrate W in an atmosphere containing oxygen, and the indium oxide precursor contained in the coating film can be favorably optically activated.

<Second Embodiment> Next, a second embodiment of the present invention will be described. FIG. 5 is a view showing an overall arrangement configuration of a thin film forming apparatus 1a according to the second embodiment. The layout of the processing unit of the thin film forming apparatus 1a of the second embodiment is different from that of the thin film forming apparatus 1 of the first embodiment. The film forming apparatus 1a of the second embodiment includes a loader 21, a coating processing unit 30, a light irradiation processing unit 50, a heat treatment unit 40, an unloader 22, a first transfer robot 11, and a second transfer robot 12. In FIG. 5, the same members as those in the first embodiment are denoted by the same reference numerals.

In the second embodiment, the loader 21, the coating processing unit 30, and the light irradiation processing unit 50 are disposed around the first transfer robot 11. On the other hand, the unloader 22, the heat treatment unit 40, and the light irradiation processing unit 50 are disposed around the second transfer robot 12. The light irradiation processing unit 50 is disposed between the first transfer robot 11 and the second transfer robot 12 .

The loader 21 is a loading unit that carries the unprocessed substrate W into the film forming apparatus 1a. The unloader 22 is a carry-out unit that carries out the processed substrate W from the film forming apparatus 1a. Unlike the loader/unloader 20 of the first embodiment in which both the unprocessed substrate is carried in and the processed substrate is unloaded, the loader 21 is a dedicated unit for loading, and the unloader 22 is a unit for carrying out the loading.

The first transfer robot 11 and the second transfer robot 12 have the same configuration as the transfer robot 10 of the first embodiment. The coating treatment unit 30, the heat treatment unit 40, and the light irradiation treatment unit 50 are the same members as those of the first embodiment. In the second embodiment, the first transfer robot 11 transports the substrate W to the loader 21, the coating processing unit 30, and the light irradiation processing unit 50. Further, the second transfer robot 12 transports the substrate W to the light irradiation processing unit 50, the heat treatment unit 40, and the unloader 22. In the light irradiation processing unit 50 of the second embodiment, the substrate W is irradiated with ultraviolet rays, and the substrate W is transferred from the first transfer robot 11 to the second transfer robot 12 .

In the second embodiment, the unprocessed substrate W is carried into the loader 21 from the outside of the film forming apparatus 1a. The unprocessed substrate W carried into the loader 21 is received by the first transfer robot 11 and carried into the coating processing unit 30. In the coating treatment unit 30, a coating treatment of a coating liquid containing an indium oxide precursor is performed on the substrate W. After the coating process, the first transfer robot 11 carries out the substrate W on which the coating film is formed from the coating processing unit 30 and carries it into the light irradiation processing unit 50.

In the same manner as the first embodiment, the light-irradiation processing unit 50 illuminates the substrate W with respect to the plurality of excimer lamps 51, and applies ultraviolet rays to the coating film formed on the substrate W from the plurality of excimer lamps 51 to apply the coating. The indium oxide precursor contained in the film is optically activated. Further, in the first embodiment, the substrate W is reciprocated with respect to the plurality of excimer lamps 51. However, in the second embodiment, the substrate W may be oriented in one direction with respect to the plurality of excimer lamps 51 (from the first The transport robot 11 moves once in the direction of the second transport robot 12). In the same manner as in the first embodiment, the substrate W is slidably moved relative to the plurality of excimer lamps 51, whereby the ultraviolet ray is uniformly irradiated onto the coating film on the substrate W in an atmosphere containing oxygen, and the coating film is placed in the coating film. The indium oxide precursor contained is well optically activated.

The substrate W whose ultraviolet irradiation treatment has been completed is carried out by the second transfer robot 12 from the light irradiation processing unit 50 and carried into the heat treatment unit 40. The heat treatment of the substrate W is performed in the heat treatment portion 40, whereby the indium oxide precursor contained in the coating film on the substrate W is thermally activated.

After the completion of the heat treatment, the second transfer robot 12 takes out the substrate W from the heat treatment unit 40 and carries it into the unloader 22 . Then, the processed substrate W is carried out from the unloader 22 to the outside of the film forming apparatus 1a to complete a series of film forming processes for the substrate W.

<Modifications> The embodiments of the present invention have been described above, but the present invention can be variously modified in addition to the above embodiments without departing from the scope of the invention. For example, in the above-described embodiment, ultraviolet irradiation is performed in a state where the space between the plurality of excimer lamps 51 and the substrate W is an atmospheric environment. However, the present invention is not limited thereto, and the environment adjustment mechanism 59 may be used. Adjust the environment for this space. As described above, oxygen is required in order to activate the indium oxide precursor well, and it is preferable that oxygen is not present from the viewpoint of ultraviolet irradiation efficiency. Therefore, the environment adjustment mechanism 59 performs environmental adjustment so that the oxygen concentration in the environment of the space between the excimer lamp 51 and the substrate W becomes 15% or more and 20% or less. When the oxygen concentration in the environment between the excimer lamp 51 and the substrate W is 15% or more and 20% or less, the indium oxide precursor contained in the coating film can be favorably activated. In addition, when the irradiation interval d between the excimer lamp 51 and the substrate W is set to 10 mm or less to bring them closer together, the vacuum ultraviolet rays emitted from the excimer lamp 51 are not absorbed at all and can reach the coating film on the substrate W. on. As a result, similarly to the above-described embodiment, by sliding the substrate W against the plurality of excimer lamps 51, the ultraviolet rays are uniformly irradiated onto the coating film on the substrate W in an atmosphere containing oxygen, so that coating can be performed. The indium oxide precursor contained in the film is well optically activated.

Further, in the above-described embodiment, the substrate W is moved relative to the plurality of excimer lamps 51, but the plurality of excimer lamps 51 may be moved relative to the substrate W while supporting the substrate W in a stationary state. That is, the substrate W may be relatively moved with respect to the plurality of excimer lamps 51.

Further, in the above embodiment, three excimer lamps 51 are disposed, but the number of excimer lamps 51 can be set to an appropriate number.

Further, in the above-described embodiment, the substrate W is supported and slidably moved by the plurality of transport rollers 56, but the substrate W may be floated and slid by air to replace the above.

In addition, the arrangement structure of the processing unit including the light irradiation processing unit 50 is not limited to the layout of FIGS. 1 and 2, and may be any layout as long as the processing according to the processing program shown in FIG. 4 can be performed. [Industrial availability]

The technique of the present invention is suitable for forming a thin film containing indium oxide excellent in electrical characteristics for use in the production of a thin film transistor (TFT) or the like.

1, 1a‧‧‧ film forming device

10‧‧‧Transfer robot

11‧‧‧1st transport robot

12‧‧‧2nd transfer robot

20‧‧‧Loader/Unloader

21‧‧‧Loader

22‧‧‧Unloader

30‧‧‧ Coating Processing Department

40‧‧‧ Heat Treatment Department

50‧‧‧Light Irradiation Processing Department

51‧‧‧Excimer lamp

55‧‧‧Mobile Department

56‧‧‧Transport roller

57‧‧‧ Drive Department

59‧‧‧Environmental Adjustment Agency

AR2‧‧‧ arrow

D‧‧‧ Irradiation interval

P‧‧‧ arrangement interval

W‧‧‧Substrate

S1 ~ S5‧‧‧ steps

Fig. 1 is a view showing an overall arrangement structure of a thin film forming apparatus of the present invention. FIG. 2 is a view showing a configuration of a light irradiation treatment unit. Fig. 3 is an enlarged view showing the vicinity of a plurality of excimer lamps. 4 is a flow chart showing a processing procedure in the thin film forming apparatus. FIG. 5 is a view showing an overall arrangement configuration of a thin film forming apparatus according to a second embodiment.

Claims (8)

A light irradiation device that irradiates ultraviolet light on a substrate on which a coating film containing an indium oxide precursor is formed to optically activate the indium oxide precursor, and is characterized by comprising: a plurality of rod-shaped excimer lamps Arranging parallel to each other along a prescribed direction; and moving the portion to relatively move the substrate along the predetermined direction with respect to the plurality of the excimer lamps; and a plurality of the excimer lamps The irradiation interval of the substrate moved by the moving portion is shorter than the arrangement interval of the plurality of the excimer lamps. The light irradiation device according to claim 1, wherein the irradiation interval is 2 mm or more and 10 mm or less. The light irradiation device according to the first or second aspect of the invention, wherein the moving portion reciprocates the substrate relative to the plurality of excimer lamps. The light irradiation device according to the first or second aspect of the invention, wherein the plurality of the excimer lamps and the substrate moved by the moving portion are in an environment containing oxygen. The light irradiation device according to claim 4, wherein the oxygen concentration in the environment is 15% or more and 20% or less. A thin film forming apparatus which is a thin film forming apparatus for forming a thin film containing indium oxide, comprising: a coating processing unit that applies a coating liquid containing an indium oxide precursor onto a substrate to form a coating film on the substrate; The light irradiation device according to any one of claims 1 to 5, wherein the heat treatment unit heats the substrate optically activated by the light irradiation device to the indium oxide precursor The indium oxide precursor is thermally activated. The film forming apparatus according to claim 6, further comprising: a loading/unloading unit, loading an unprocessed substrate, and carrying out the processed substrate; and a transfer robot for the loading/unloading unit and the coating processing unit The heat treatment unit and the light irradiation device transport the substrate, and the loading/unloading unit, the coating processing unit, the heat treatment unit, and the light irradiation device are disposed around the transfer robot. The film forming apparatus according to claim 6, further comprising: a loading unit that carries the unprocessed substrate; a carrying-out unit that carries out the processed substrate; and a first transport robot that performs the coating process on the loading unit And the second light transfer device, wherein the second transfer robot transports the substrate to the light irradiation device, the heat treatment unit, and the carry-out unit, and the first transfer robot and the second transfer robot The light irradiation device is disposed between.