WO2010150740A1 - Template processing device, imprint system, template processing method, and computer storage medium - Google Patents

Template processing device, imprint system, template processing method, and computer storage medium Download PDF

Info

Publication number
WO2010150740A1
WO2010150740A1 PCT/JP2010/060462 JP2010060462W WO2010150740A1 WO 2010150740 A1 WO2010150740 A1 WO 2010150740A1 JP 2010060462 W JP2010060462 W JP 2010060462W WO 2010150740 A1 WO2010150740 A1 WO 2010150740A1
Authority
WO
WIPO (PCT)
Prior art keywords
template
release agent
coating liquid
unit
film
Prior art date
Application number
PCT/JP2010/060462
Other languages
French (fr)
Japanese (ja)
Inventor
正一 寺田
義雄 木村
高広 北野
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2010150740A1 publication Critical patent/WO2010150740A1/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Definitions

  • the present invention relates to a template processing apparatus for forming a release agent on a template having a transfer pattern formed on the surface and forming a coating film on the release agent, an imprint system including the template processing apparatus,
  • the present invention relates to a template method using a template processing apparatus and a computer storage medium.
  • a semiconductor wafer (hereinafter referred to as “wafer”) is subjected to a photolithography process to form a predetermined resist pattern on the wafer.
  • the resist pattern When forming the above-described resist pattern, the resist pattern is required to be miniaturized in order to further increase the integration of the semiconductor device.
  • the limit of miniaturization in the photolithography process is about the wavelength of light used for the exposure process. For this reason, it has been advancing to shorten the wavelength of exposure light.
  • there are technical and cost limitations to shortening the wavelength of the exposure light source and it is difficult to form a fine resist pattern on the order of several nanometers, for example, only by the method of advancing the wavelength of light. is there.
  • Patent Document 1 a template T (also called a mold or a mold) in which a fine transfer pattern C is formed on the surface and a release agent S is formed on the surface as shown in FIG. 22 is used. It is done.
  • the template T on which the release agent S is formed is pressed against the resist film R, the transfer pattern C is transferred, and the resist pattern P is formed.
  • the resist film R is irradiated with light, and the resist film R is photopolymerized.
  • the template T is raised and a resist pattern P is formed on the wafer W.
  • a resist solution is applied to a template T on which a release agent S is formed to form a resist film R.
  • the template T on which the resist film R is formed is raised and pressed against the wafer W, and the resist film R is irradiated with light to photopolymerize the resist film.
  • the template T is lowered to form a resist pattern P on the wafer W, as shown in FIG.
  • the resist solution is applied to the template T in a state where the release agent S is formed and the liquid repellency is increased. that resist solution R 1 does not enter into the recess portion U of the transfer pattern C as shown, a new problem arises. In this case, it will remain in the interior of the resist solution R 1 is recess U in the form of droplets, the shape of the droplet from being directly transferred to the resist pattern P on the wafer W, the predetermined on the wafer W The resist pattern P cannot be formed properly.
  • the present invention has been made in view of the above points, and an object of the present invention is to appropriately form a coating film on a release agent formed on the surface of a template and eliminate the need for alignment during pattern transfer.
  • the present invention provides a template processing apparatus for forming a release agent on a template having a transfer pattern formed on the surface and forming a coating film on the release agent, A processing station that performs a predetermined process on the template; and a template loading / unloading station that can hold a plurality of the templates and that loads the template into and out of the processing station.
  • a release agent film-forming block for forming a release agent on the surface of the film, a coating liquid supply unit for supplying a coating liquid onto the formed release agent, and a coating liquid applied on the release agent And a coating liquid filling part that pushes the liquid into the depression part of the transfer pattern of the template.
  • the coating liquid applied on the release agent is applied to the transfer pattern of the template by the application liquid filling unit. It can be pushed into the recess. That is, the coating liquid can be filled in the recesses of the template transfer pattern with a gap. Therefore, when forming a predetermined pattern on the substrate using the template on which the coating liquid is formed in this way, it is possible to form the predetermined pattern on which the transfer pattern of the template is appropriately transferred on the substrate. Further, when a pattern is formed on a substrate using a template on which a coating solution is formed, alignment adjustment between the coating film on the substrate and the transfer pattern of the template, which has been conventionally performed, becomes unnecessary. Therefore, throughput can be improved.
  • an imprint system including the template processing apparatus, wherein the transfer pattern is formed on a substrate using the template having a release agent formed on the surface thereof at the processing station.
  • An imprint unit that transfers to the coating film and forms a predetermined pattern on the coating film; and a substrate loading / unloading station that can hold a plurality of the substrates and that loads and unloads the substrate to and from the imprint unit.
  • Another aspect of the present invention is a template processing method in which a release agent is formed on a template having a transfer pattern formed on the surface, and a coating film is formed on the release agent.
  • a process of forming a release agent into a film, applying a coating solution onto the formed release agent, and pushing the coating solution applied onto the release agent into a recess of the template transfer pattern have.
  • Another aspect of the present invention is a readable computer storage medium storing a program that operates on a computer of a control unit that controls the template processing apparatus in order to cause the template processing apparatus to execute the template processing method. .
  • the coating film can be appropriately formed on the release agent formed on the template surface.
  • FIG. 7A is an explanatory diagram schematically showing a state of a template in a resist film forming process
  • FIG. 7A shows a state in which a resist solution is supplied to the surface of the template
  • FIG. FIG. 7 (c) shows a state in which a resist film is formed on the surface of the template.
  • FIG.9 (a) shows a mode that the surface of the template was wash
  • FIG. 9 (c) shows a state in which the release agent is applied to the surface of the template
  • FIG. 9 (c) shows a state in which the release agent on the template is baked
  • FIG. 9 (d) shows a film formation of the release agent on the template.
  • FIG. 9 (a) shows a mode that the surface of the template was wash
  • FIG. 9 (c) shows a state in which the release agent is applied to the surface of the template
  • FIG. 9 (c) shows a state in which the release agent on the template is baked
  • FIG. 9 (d) shows a film formation of the release agent on the template.
  • FIG. 9 (a) shows
  • FIG. 4 is an explanatory view showing a state in which a resist film is formed on a template. It is explanatory drawing which showed typically a mode that a resist liquid was pushed in the hollow part with the roller. It is explanatory drawing which showed typically a mode that a resist liquid was pushed into the hollow part with the brush. It is explanatory drawing which showed typically a mode that a filter was arrange
  • FIG.16 (a) shows a mode that a resist liquid is apply
  • FIG. 16C shows a state where a resist film is formed on the template. It is a top view of a holder.
  • FIG.23 (a) shows a mode that the template was pressed on the wafer
  • FIG.23 (b) is a resist film on a wafer.
  • FIG. 23C shows a state in which a resist pattern is formed on the wafer
  • FIG. 23D shows a state in which the remaining film on the wafer is removed.
  • FIG.24 (a) shows a mode that the resist liquid was apply
  • FIG. 24C is a diagram illustrating a state in which a resist pattern is formed on the wafer. It is explanatory drawing which showed typically the state of the template and wafer in each process of an imprint process, Fig.25 (a) shows a mode that the resist film was formed into a template, FIG.25 (b) is on a wafer.
  • FIG. 25C is an explanatory view showing a state in which a resist pattern is formed on the wafer. It is explanatory drawing which shows typically a mode that the resist liquid was supplied to the surface of the template.
  • FIG. 1 is a plan view schematically showing the configuration of the template processing apparatus 1 according to the present embodiment.
  • a template T having a rectangular parallelepiped shape and having a predetermined transfer pattern C formed on the surface is used as shown in FIG.
  • the transfer pattern C means the side of the template T which is formed with the surface T 1, the surface T 1 opposite to the surface of the backside T 2.
  • a transparent material that can transmit visible light, near ultraviolet light, ultraviolet light, or the like, such as glass, is used.
  • Template processing unit 1 includes a plurality as shown in FIG. 1, for example, five of the template T or transferring, between the outside and the template processing apparatus 1 with the cassette unit, carrying out a template T the template cassette C T
  • the template loading / unloading station 2 and the processing station 3 including a plurality of processing units for performing predetermined processing on the template T are integrally connected.
  • the template loading / unloading station 2 is provided with a cassette mounting table 10.
  • the cassette mounting table 10 can mount a plurality of template cassettes CT in a line in the X direction (vertical direction in FIG. 1). That is, the template carry-in / out station 2 is configured to be capable of holding a plurality of templates T.
  • the template carry-in / out station 2 is provided with a template carrier 12 that can move on a conveyance path 11 extending in the X direction.
  • the template transport body 12 is also movable in the vertical direction and the vertical direction ( ⁇ direction), and can transport the template T between the template cassette CT and the processing station 3.
  • the processing station 3 includes a transfer line A for the template T.
  • the transfer line A is arranged on the front side (X direction negative direction side in FIG. 1) and extends in the Y direction, and a line extending in the X direction at the outer end opposite to the template loading / unloading station 2.
  • A2 and a line A3 extending in the Y direction on the back side (X direction positive direction side in FIG. 1) are connected in this order.
  • a plurality of transfer rollers 30 described later are arranged side by side on the transfer line A, and the template T can be transferred by roller transfer (roller conveyor system). That is, the template T transferred from the template loading / unloading station 2 to the processing station 3 is sequentially transferred along the lines A1, A2, and A3.
  • the line A1 in order from the template carry-out station 2 side, the transition unit 20 for passing the template T, the pre-cleaning unit release agent on the template T is to clean the surface T 1 of the before the deposition 21
  • a mold release agent coating unit 22 for applying a liquid mold release agent to the template T and a heating unit 23 for heating the template T are arranged in a row.
  • a temperature adjustment unit 24 for adjusting the temperature of the template T is arranged.
  • a rinsing unit 25 for rinsing the release agent on the template T in order toward the template loading / unloading station 2 side, a rinsing unit 25 for rinsing the release agent on the template T, a resist application unit 26 for applying a resist solution on the release agent of the template T, and a transition unit 27 are arranged in a line.
  • the processing units 21 to 25 form a release agent film forming line.
  • a plurality of transport rollers 30 are arranged side by side in the direction along the transport line A, as shown in FIGS.
  • Each conveyance roller 30 is configured to be rotatable about a central axis extending in a direction perpendicular to the direction along the conveyance line A as a rotation axis.
  • at least one transfer roller 30 is provided with a drive mechanism (not shown) including a motor, for example.
  • the template T is transported between the transition units 20 and 27 on the transport rollers 30.
  • the transition unit 20 of the transport line A has lifting pins 40 for supporting and lifting the template T from below.
  • the raising / lowering pin 40 can be moved up and down by the raising / lowering drive part 41 provided under the conveyance roller 30.
  • the elevating pins 40 are arranged so as to be inserted between the plurality of conveying rollers 30 arranged side by side along the conveying line A. With the elevating pins 40, the template T is placed on the transfer roller 30 from the template transfer body 12.
  • transition unit 27 is the same as the configuration of the transition unit 20 described above, and a description thereof will be omitted.
  • the transport line A is bent in the direction perpendicular to the line A2 as shown in FIG. 1, but is shown in a straight line in FIG. 4 in order to give priority to the understanding of the configuration. .
  • the conveyance line A is provided with a casing 50 as shown in FIGS.
  • the inside of the casing 50 is partitioned by a plurality of partition walls 51, and the partitioned spaces constitute processing units 21 to 26, respectively.
  • a loading / unloading port 52 for the template T is formed at a height corresponding to the transfer roller 30.
  • Each loading / unloading port 52 may be provided with an open / close shutter (not shown) so that the inside of each processing unit 21 to 26 can be sealed.
  • the pre-cleaning unit 21 has an ultraviolet irradiation unit 60 that irradiates the template T with ultraviolet rays.
  • the ultraviolet irradiation unit 60 is disposed above the transport roller 30 and extends in the width direction of the template T (longitudinal direction of the transport roller 30). Then, the entire surface T 1 of the template T is irradiated with ultraviolet rays by irradiating the surface T 1 of the template T being conveyed on the conveyance roller 30 with ultraviolet rays.
  • the release agent application unit 22 has a release agent nozzle 61 as a release agent supply unit that supplies the release agent onto the template T.
  • the release agent nozzle 61 is disposed above the conveying roller 30.
  • the release agent nozzle 61 extends in the width direction of the template T, and a slit-like supply port (not shown) is formed on the lower surface thereof. Then, by supplying a release agent to the surface T 1 from the release agent nozzle 61 of the template T being conveyed to conveying roller 30 above, the release agent is applied to the entire surface of the surface T 1.
  • the release agent application unit 22 is connected to a discharge pipe (not shown) for collecting and discharging the release agent dropped from the template T and an exhaust pipe (not shown) for exhausting the internal atmosphere. Yes.
  • a material having a liquid repellency with respect to a resist film on the wafer which will be described later, such as a fluororesin, is used as the material of the release agent.
  • the heating unit 23 has a hot plate 62 disposed above the transfer roller 30.
  • a heater that generates heat by power feeding is provided inside the hot plate 62, and the hot plate 62 can be adjusted to a predetermined set temperature.
  • the heat plate 62 extends in the width direction of the template T, can be heated template T being conveyed to conveying roller 30 above the surface T 1 side (transfer pattern C side).
  • the heating unit 23 is connected to an exhaust pipe (not shown) that exhausts the internal atmosphere.
  • the heating plate 62 is heated template T from the surface T 1 side, may be heated to template T from the back T 2 side. That is, the hot plate may be arranged at the same height as the conveying roller 30 or may be arranged below the conveying roller 30. Furthermore, by both placing these hot plate, the template T may be heated from the both surfaces T 1 and back T 2.
  • a part of the conveyance roller 30 constitutes a temperature adjustment roller 30a. Cooling water for cooling the template T circulates inside the temperature adjusting roller 30a. Further, a gas supply unit 63 that blows an inert gas such as nitrogen or a gas gas such as dry air downward is disposed above the transfer roller 30. Gas supply unit 63 extends in the width direction of the template T, it is possible to blow air gas on the surface T 1 entire template T being conveyed. The template T is adjusted to a predetermined temperature by the temperature adjusting roller 30a and the gas supply unit 63. The temperature control unit 24 is connected to an exhaust pipe (not shown) that exhausts the internal atmosphere.
  • the rinsing unit 25 includes a rinsing liquid nozzle 64 for supplying an organic solvent as a rinsing liquid for the release agent onto the template T, and an inert gas such as nitrogen or dry air on the template T.
  • the rinsing liquid nozzle 64 and the gas nozzle 65 are arranged above the conveying roller 30 in this order from the temperature adjustment unit 24 side.
  • the rinse liquid nozzle 64 and the gas nozzle 65 are each extended
  • the rinse unit 25 is connected to a discharge pipe (not shown) for collecting and discharging the organic solvent dropped from the template T and an exhaust pipe (not shown) for exhausting the internal atmosphere.
  • the resist coating unit 26 presses the resist liquid nozzle 70 for supplying a resist liquid as a coating liquid onto the mold release agent of the template T, and the resist liquid applied on the mold release agent, thereby transferring the transfer pattern C of the template T.
  • the squeegee 71 is provided as a coating solution filling portion for pushing the resist solution into the depression.
  • the resist solution nozzle 70 and the squeegee 71 are disposed above the transfer roller 30.
  • a rail 72 extending along the X direction (vertical direction in FIG. 6) is provided on the Y direction positive direction (right direction in FIG. 6) side in the casing 50.
  • An arm 73 is attached to the rail 72, and the resist coating nozzle 26 is supported by the arm 73.
  • an ink jet type nozzle is used as the resist solution nozzle 70, and a plurality of supply ports (not shown) formed in a line along the longitudinal direction are formed below the resist solution nozzle 70.
  • the resist solution nozzle 70 can strictly control the resist solution supply timing, the resist solution supply amount, and the like.
  • the arm 73 is movable on the rail 72 by an arm driving unit 74.
  • the resist solution nozzle 72 can move from the standby unit 75 installed outside the casing 50, for example, on the positive side in the X direction, to above the template T on the transfer roller 30. Can move in the X direction on the surface.
  • the arm 73 can be moved up and down by a nozzle driving unit 74, and the height of the resist solution nozzle 72 can be adjusted.
  • a rail 76 extending in the X direction (up and down direction in FIG. 6) is similarly provided on the Y direction negative direction (left direction in FIG. 6) in the casing 50.
  • An arm 77 is attached to the rail 76, and the squeegee 71 is supported by the arm 77.
  • the arm 77 is movable on the rail 76 by an arm driving unit 78.
  • a standby unit 79 is installed outside the casing 50 on the X direction negative direction side. Since the operation of the arm 77 and the like is the same as that of the above-described arm 73 and the like, description thereof is omitted.
  • the surface of the squeegee 71 in contact with the resist solution is subjected to a liquid repellent treatment with a material having liquid repellency with respect to the resist solution, for example, a fluororesin.
  • a liquid repellent treatment the surface of the squeegee 71 is not coated with a liquid repellent material, but the squeegee 71 itself may be formed of a material having liquid repellency, such as polyurethane.
  • the resist solution R 1 is supplied from the resist solution nozzle 70 onto the release agent S formed on the surface T 1 of the template T. At this time, as shown in FIG. 7A, the resist solution R 1 does not completely enter the recess U of the transfer pattern C of the template T due to the water repellency of the release agent S, Stay in the state of. Then, pressing the squeegee 71 in the resist solution R 1, is moved in the positive direction in the X-direction of FIG. 6 in a state of pressing the squeegee 71 to resist liquid as shown in FIG.
  • the template T can be moved relative to the squeegee 71 even when the position of the squeegee 71 is fixed, and therefore, the squeegee 71 is not necessarily configured to be movable. . In this case, the rail 76 becomes unnecessary. In addition, as with the squeegee 71, the rail 72 is not necessarily required for the resist solution nozzle 70 as well.
  • the control unit 100 is, for example, a computer and has a program storage unit (not shown).
  • the program storage unit controls the transfer of the template T between the template loading / unloading station 2 and the processing station 3, the operation of the drive system in the processing station 3, and the like.
  • the program that executes is stored.
  • This program is recorded in a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), memory card, or the like. Or installed in the control unit 100 from the storage medium.
  • HD computer-readable hard disk
  • FD flexible disk
  • CD compact disk
  • MO magnetic optical desk
  • the template processing apparatus 1 is configured as described above. Next, in the template processing apparatus 1, the release agent S is formed on the template T, and the formation of the resist film R on the release agent S will be described.
  • FIG. 8 shows the main processing flow of this template processing
  • FIG. 9 shows the state of the template T in each step.
  • the template carrier 12, the template T is taken from the template cassette C T on the cassette mounting table 10, (step G1 of Fig. 8) to be conveyed to the transition unit 20 in the processing station 3.
  • the template cassette C T the template T, the surface T 1 of the transfer pattern C is formed is accommodated so as to face upward, the template T in this state is conveyed to the transition unit 20.
  • the template T transported into the transition unit 20 is placed on the transport roller 30 by the lifting pins 40 and transported along the transport line A by roller transport at a predetermined speed.
  • the transfer unit A, the pre-cleaning unit 21, the release agent application unit 22, the heating unit 23, the temperature adjustment unit 24, the rinse unit 25, the resist application unit 26, and the transition unit 27 are sequentially transferred to each processing unit.
  • a predetermined process is performed on the template T being conveyed.
  • the release agent coating unit 22 supplies the release agent S on the template T from the release agent nozzle 61, a release agent to the surface T 1 the entire surface of the template T as shown in FIG. 9 (b) S Is applied (step G3 in FIG. 8).
  • the heating unit 23 the template T is heated to, for example, 200 ° C. by the hot plate 62, and the release agent S on the template T is baked as shown in FIG.
  • step G4 in FIG. 8 Thereafter, in the temperature adjustment unit 24, the template T is adjusted to a predetermined temperature by the temperature adjustment roller 30 a and the gas supply unit 63. Thereafter, in the rinsing unit 25, an organic solvent is supplied to the template T from the rinsing liquid nozzle 64, and only the unreacted portion of the release agent S on the template T is peeled off. Thus, as shown in FIG. 9D, the release agent S along the transfer pattern C is formed on the template T (step G5 in FIG. 8). Subsequently, in the rinsing unit 25 blows air gas on the template T from the gas nozzle 65, the surface T 1 is is dried.
  • the unreacted part of the release agent S means a part other than the part where the release agent S chemically reacts with the surface T 1 of the template T and adsorbs to the surface T 1 .
  • the resist solution nozzle 70 is moved in the X direction of FIG. 6, and the release agent S on which the template T is formed is applied as shown in FIG. supplying a resist solution R 1 (step G6 in FIG. 8).
  • the control unit 100 controls the supply timing, supply amount, and the like of the resist solution R 1 supplied from the resist solution nozzle 70.
  • the amount of the resist solution R 1 applied to a portion formed on the convex portion is small
  • the recessed portion U the amount of the resist solution R 1 applied to the corresponding portion (portion corresponding to the convex portion of the resist pattern) in is controlled to be larger.
  • the resist solution R 1 is applied on the wafer W in accordance with the aperture ratio of the transfer pattern C.
  • the squeegee 71 When the resist solution R 1 is applied onto the template T, the squeegee 71 is moved in the X direction in FIG. 6 with the squeegee 71 pressed against the resist solution R 1 as shown in FIG. pushing the resist solution R 1 of the recess portion U of the transfer pattern C. As a result, as shown in FIG. 9G, a resist film R is formed on the release agent S on the template T (step G7 in FIG. 8).
  • the template T carried to the transit unit 27 is delivered to the template carrier 12 by the lifting pins 40, and returned to the template cassette C T (step in FIG. 8 G8).
  • a series of release agent processing in the template processing apparatus 1 is completed.
  • the resist coating unit 26 after supplying the resist solution R 1 on the surface T 1 release agent is deposited on the S where the template T, the resist solution R 1 by the squeegee 71 Template
  • the resist solution R 1 By pushing into the recess U of the transfer pattern C of T, the resist solution R 1 can be filled in the recess U without any gap, and the resist film R can be formed on the release agent S. Therefore, when a predetermined resist pattern is formed on the resist film on the wafer using the template T, a predetermined pattern in which the transfer pattern C of the template T is appropriately transferred can be formed on the wafer. Note that the operation, effect, and the like in the case of forming a predetermined resist pattern on the wafer using the template T will be described in detail later.
  • the template loading / unloading station 2 can hold a plurality of templates T
  • the template T can be continuously transferred from the template loading / unloading station 2 to the processing station 3.
  • the template T is roller-transferred to the various processing units 21 to 27 arranged on the transfer line A by a plurality of transfer rollers 30, and a predetermined process is performed on the template T being transferred. Therefore, predetermined processing can be continuously performed on the plurality of templates T. Therefore, the resist film R can be continuously formed on the plurality of templates T.
  • the template T has a thickness of 6.35 mm, for example.
  • the heating plate 62 is arranged above the transfer roller 30, that is, on the transfer pattern C side (surface T 1 side) of the template T in the heating unit 23, the surface of the template T From the T 1 side, the release agent S on the surface T 1 can be directly heated. Therefore, regardless of the thickness of the template T, the release agent S can be efficiently heated and fired. Further, even when the heating plate 62 is disposed below the template T, it is possible to efficiently heat the release agent S from the back T 2 side of the template T by thermal conduction.
  • the resist solution R 1 can be prevented from adhering to the squeegee 71.
  • the squeegee 71 is used as the coating liquid filling portion to be pushed into the depression U of the transfer pattern C of the template T.
  • the coating liquid filling portion is not limited to the squeegee 71, and the resist as long as the liquid R 1 can form a resist film R pushing the recess U of the transfer pattern C, may also be used such as roller 101 and brush 102 as shown in FIG. 10 and FIG. 11 for example. Even such a case, the surface in contact with the resist solution R 1 are preferably subjected to liquid repellent treatment.
  • the squeegee 71 is pressed directly against the resist solution R 1 applied to the template T.
  • the upper surface of the resist solution R 1 applied to the template T. to place the liquid-repellent treated filter F1, or by pressing a squeegee 71 via the filter F1 in the resist solution R 1.
  • adhesion of the resist solution R 1 to the squeegee 71 can be further suppressed.
  • particles attached to the squeegee 71 can be prevented from attaching to the template T side.
  • the resist solution R 1 on the upper surface of the filter F2 After coating, the resist film R may be formed by the squeegee 71.
  • the filter F2 the surface capable permeate repellent treated and the resist solution R 1 is used.
  • the application of the release agent S on the template T and the heating of the template T are performed in separate processing units (the release agent application unit 22 and the heating unit 23).
  • the processing unit may be used. That is, the release agent nozzle 61 and the hot plate 62 described above may be arranged in this order in the direction along the transport line A in one processing unit.
  • the resist film R is formed on the surface T 1 of the template T by supplying the resist solution R 1 onto the template T in the resist coating unit 26 of the processing station 3.
  • resist solution may be performed by pressing a stamp is applied to the surface T 1 of the template T on.
  • a stamp unit 110 is arranged on the transport line A of the template processing apparatus 1 instead of the resist coating unit 26 shown in FIG. That is, in this case, the temperature adjustment unit 24, the rinse unit 25, the stamp unit 110, and the transition unit 27 are arranged in a line on the line A3 of the transport line A.
  • a transition unit 20, a pre-cleaning unit 21, a release agent coating unit 22, and a heating unit 23 are arranged in a line in order from the template loading / unloading station 2 side. Moreover, the temperature control unit 24 is arrange
  • a transfer roller 30 is arranged as shown in FIG.
  • a rail 111 extending along the Y direction (left-right direction in FIG. 15) is provided on the ceiling surface of the casing 50 as shown in FIG.
  • An arm 112 is attached to the rail 111, and a stamp M provided so that the surface of the arm 111 faces the transfer roller 30, that is, the surface T 1 of the template T, is supported.
  • the arm 112 is movable on the rail 111 by the arm driving unit 113.
  • the stamp M can move to above the template T on the conveyance roller 30.
  • the arm 112 can be moved up and down by the arm driving unit 112 and can press the stamp M against the template T.
  • the surface M 1 of the stamp M is subjected to a liquid repellent treatment with a material having higher liquid repellency than the release agent S.
  • a resist solution nozzle 70 provided with a supply port (not shown) facing upward is located above the transfer roller 30 and below the rail 111.
  • a template T position detection sensor 114 is provided at a predetermined position below the conveyance roller 30. The position detection sensor 114 detects, for example, the Y direction negative direction side (left direction side in FIG. 15) of the template T conveyed on the conveyance roller 30, and outputs detection information to the control device 100. .
  • the template T is transported on the transport roller 30 in the Y direction negative direction side in FIG.
  • the conveyance roller 30 temporarily stops the conveyance of the template T and makes the template T stand by at a predetermined position.
  • the stamp M moves along the rail 111 toward the template T. Then, when the stamp M crosses over the resist solution nozzle 70 is supplied from the resist solution nozzle 70 as shown in FIG. 16 (a) on the surface M 1 of the stamp M, the resist solution R 1 on the surface M 1 of the stamp M Is applied.
  • the stamp M coated with the resist solution R 1 moves above the template T, and then the stamp M is pressed against the surface T 1 of the template T as shown in FIG.
  • the stamp M is raised, and a resist film R is formed on the template T as shown in FIG. In this way, a series of resist film R forming processes in the stamp unit 110 is completed.
  • the resist solution nozzle 70 is moved may be performed applying the resist solution R 1.
  • the rail 111 is disposed along the Y direction in FIG. 15, the rail 111 may be disposed along the X direction of FIG. 15, that is, parallel to the central axis of the transport roller 30.
  • the resist film R in advance since the resist solution R 1 is pressed against the coated stamped M template T, and the resist solution coating R 1 to the template T, pushing of the resist solution R 1 into the recess U That is, the resist film R can be formed at a time. Therefore, in the stamp unit 110, the resist film R can be smoothly formed on the release agent S formed on the template T, and thereby the throughput of the film formation process of the resist film R in the template processing apparatus 1 is achieved. Can be improved.
  • the resist solution R 1 in the stamp unit 110, had been only coating the resist solution R 1 by the resist solution nozzle 70, as needed, as indicated by a broken line in FIG. 15 for example, the resist solution
  • the squeegee 71 provided with the surface in contact with R 1 facing upward may be disposed on the downstream side of the resist solution nozzle 70 in the conveyance direction of the template T (Y direction negative direction in FIG. 12).
  • the templates T are individually conveyed and processed.
  • a plurality of, for example, nine templates T are held in one holder 120 and processed. May be.
  • the holder 120 is formed with a receiving portion 121 that is recessed downward to receive each template T as shown in FIG.
  • a plurality of suction ports are formed on the bottom surface of the housing part 121, and each template T is sucked and held in the housing part 121.
  • the processing station 3 can perform predetermined processing on a plurality of templates T at a time. Therefore, a resist film can be formed on more templates T in a short time, and the throughput of resist processing can be improved.
  • the template processing apparatus 1 of the above embodiment may be arranged in the imprint system 200 as shown in FIG.
  • the imprint system 200 uses a template T to form a resist pattern on a wafer W as a substrate, and a plurality of, for example, 25 wafers W between the outside and the imprint system 200 in units of cassettes.
  • a wafer loading / unloading station 211 is provided as a substrate loading / unloading station for loading / unloading and loading / unloading the wafer W to / from the wafer cassette CW .
  • the imprint system 200 has a configuration in which the template processing apparatus 1, the imprint unit 210, and the wafer carry-in / out station 211 are integrally connected.
  • the transfer line B excluding the transition unit 27 from the transfer line A described above is arranged in a row on the front side (X direction negative direction side in FIG. 16). That is, on the front side of the processing station 3, the transition unit 20, the pre-cleaning unit 21, the release agent coating unit 22, the heating unit 23, the temperature adjustment unit 24, the rinse unit 25, and the resist coating unit 26 are linearly arranged in a line. Has been placed.
  • a transport line C for the template T is arranged on the back side of the processing station 3 (the positive side in the X direction in FIG. 19).
  • a transition unit 220 for delivering the template T is provided at the end of the transfer line C on the template loading / unloading station 2 side.
  • the plurality of transfer rollers 30 described above are provided between the imprint unit 210 and the transition unit 220, and the template T is transferred. Note that the configuration of the transition unit 220 is the same as the configuration of the transition unit 20 described above, and a description thereof will be omitted.
  • the wafer loading / unloading station 211 is provided with a cassette mounting table 230.
  • the cassette mounting table 230 can mount a plurality of wafer cassettes CW in a row in the X direction (left and right direction in FIG. 19). That is, the wafer carry-in / out station 211 is configured to be capable of holding a plurality of wafers W.
  • the wafer carry-in / out station 211 is provided with a wafer carrier 232 that can move on a conveyance path 231 extending in the X direction.
  • the wafer carrier 232 is also movable in the vertical direction and around the vertical direction ( ⁇ direction), and can carry the wafer W between the wafer cassette CW and the imprint unit 210.
  • the wafer carry-in / out station 211 is further provided with an alignment unit 233 for adjusting the orientation of the wafer W.
  • the alignment unit 233 adjusts the orientation of the wafer W based on the position of the notch portion of the wafer W, for example.
  • the wafer carry-in / out station 211 is provided with a reversing unit 234 for reversing the front and back surfaces of the wafer W.
  • the imprint unit 210 has a casing 240 in which a loading / unloading port E1 for the template T and a loading / unloading port E2 for the wafer W are formed on the side surfaces.
  • the plurality of transfer rollers 30 described above are arranged in the casing 240.
  • the conveyance roller 30 in the casing 240 conveys the template T conveyed from the loading / unloading port E1 through the conveyance line B to the upper side of the template holding unit 241 described later, and then unloads again from the loading / unloading port E1.
  • they are arranged in a substantially U shape.
  • a conveyance guide (not shown) that supports the side surface of the template T is provided at both ends of the central axis of the conveyance roller 30, and the template T is conveyed on the conveyance roller 30 arranged in a substantially U shape.
  • the template T is prevented from dropping from the U-shaped portion.
  • a template holder 241 that holds the lower surface of the template T is provided on the bottom surface of the casing 240 as shown in FIG.
  • Template holding portion 241 a predetermined position of the rear surface T 2 of the template T has a chuck 242 for holding suction.
  • the chuck 242 is movable in the vertical direction by a moving mechanism 243 provided below the chuck.
  • the template holder 241 has a light source 244 provided below the template T held by the chuck 242.
  • the light source 244 emits light such as visible light, near ultraviolet light, and ultraviolet light.
  • the conveyance roller 30 corresponding to the upper side of the light source 244 has a shape in which the position corresponding to the upper side of the light source 244 is cut so as not to block the light from the light source 244 as shown in FIG. Light from the light source 244 is transmitted upward through the template T.
  • a wafer holder 260 is provided on the ceiling surface of the casing 240 and above the transfer roller 30 as shown in FIG. Wafer holder 260 sucks and holds the back surface of wafer W so that the surface to be processed of wafer W faces downward. That is, the wafer holding unit 260 and the transfer roller 30 are arranged so that the wafer W held by the wafer holding unit 260 and the template T placed on the transfer roller 30 face each other.
  • the wafer holder 260 can be moved in the horizontal direction by a moving mechanism 261 provided above the wafer holder 260.
  • the imprint system 200 is configured as described above. Next, an imprint process performed in the imprint system 200 will be described.
  • FIG. 22 shows the main processing flow of this imprint processing
  • FIG. 23 shows the state of the template T and wafer W in each step of this imprint processing.
  • the template T is carried into the processing station 3 from the template carry-in / out station 2 by the template carrier 12 (step H1 in FIG. 22).
  • the cleaning of the surface T 1 of the template T in FIG. 22 step H2), (step H3 of the Fig. 22) the application of the release agent S on the surface T 1, the firing of the release agent S (in FIG. 22 step H4), rinsing of the release agent S (step H5 in FIG. 22) are sequentially performed, the release agent S is formed on the surface T 1 of the template T.
  • the template T resist solution R 1 is supplied (step H6 in FIG. 22), the resist film R is formed on the release agent on S (step H7 in FIG. 22). Note that these steps H2 to H7 are the same as the steps G2 to G7 in the above embodiment, and thus detailed description thereof is omitted.
  • the template T is transported to the imprint unit 210 by the transport roller 30 and is sucked and held by the chuck 242 of the template holding unit 241.
  • predetermined processing is performed on the template T in the processing station 3, and the template T is being transferred to the imprint unit 210.
  • the wafer cassette C W on the cassette mounting table 230 is transferred by the wafer transfer body 232.
  • the wafer W is taken out from the wafer and transferred to the alignment unit 233.
  • the alignment unit 233 adjusts the orientation of the wafer W based on the position of the notch portion of the wafer W.
  • the wafer W is reversed by the reversing unit 234 and then transferred to the imprint unit 210 (step H8 in FIG. 22).
  • the wafer W transferred to the imprint unit 210 is sucked and held by the wafer holder 260. Subsequently, the wafer W held by the wafer holder 260 is moved to a predetermined position in the horizontal direction for alignment, and the template T held by the template holder 241 is rotated in a predetermined direction. Then, the template T is raised to the wafer W side as shown by the arrow in FIG. The template T rises to a predetermined position, and the surface T 1 of the template T is pressed against the resist film R on the wafer W. The predetermined position is set based on the height of the resist pattern formed on the wafer W. Subsequently, light is emitted from the light source 244.
  • the light from the light source 244 passes through the template T and is irradiated onto the resist film R on the wafer W as shown in FIG. 23B, whereby the resist film R is photopolymerized.
  • the transfer pattern C of the template T is transferred to the resist film R on the wafer W to form a resist pattern P (step H9 in FIG. 22).
  • the template T is lowered as shown in FIG. 23C to form a resist pattern P on the wafer W (step H10 in FIG. 22).
  • the used template T is unloaded from the imprint unit 210 to the transfer line C by the transfer roller 30 (step H11 in FIG. 22). Subsequently, a new template T is transported to the imprint unit 210 by the transport roller 30 on the transport line B, and the template T in the imprint unit 210 is replaced. When the template T is replaced, the template T is raised again to the wafer W side, and a resist pattern P is formed on the wafer W. This operation is repeated.
  • the wafer W on which the resist pattern P is formed is transferred to the wafer carrier 232, transferred from the imprint unit 210 to the wafer carry-in / out station 211, and returned to the wafer cassette CW (step H12 in FIG. 22).
  • a thin resist residual film L may remain in the concave portion of the resist pattern P formed on the wafer W.
  • the residual film L outside the template processing apparatus 1 as shown in FIG. The film L may be removed.
  • the used template T transported to the transport roller 30 on the transport line C is transported to the transition unit 220 at a speed along the transport roller 30.
  • Template T already used, which are conveyed to the transition unit 220 is passed to the template carrier 12 by the lifting pins 40, and returned to the template cassette C T.
  • the predetermined resist pattern P is continuously formed on the plurality of wafers W while the template T is continuously replaced.
  • the resist solution R 1 after supplying the resist solution R 1 on the surface T 1 release agent is deposited on the S where the template T, the resist solution R 1 by the squeegee 71 of the transfer pattern C of the template T By pressing into the recess U, the resist solution R 1 can be filled in the recess U without any gap, and the resist film R can be formed on the release agent S. Therefore, when a predetermined resist pattern is formed on the resist film on the wafer using the template T, a predetermined pattern in which the transfer pattern C of the template T is appropriately transferred can be formed on the wafer.
  • the imprint system 200 includes the template processing apparatus 1, the template T can be continuously supplied to the imprint unit 210 while the resist film R is formed on the template T in the imprint system 200. . Therefore, the predetermined resist pattern P can be continuously formed on the plurality of wafers W. This also enables mass production of semiconductor devices.
  • the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
  • the present invention is not limited to this example and can take various forms.
  • the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
  • FPD flat panel display
  • the present invention is useful when a release agent is formed on a template having a transfer pattern formed on the surface, and a predetermined treatment is performed on the release agent. This is useful when forming a pattern.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)

Abstract

A template processing device forms a film of a release agent on a template on the surface of which a transfer pattern is formed and forms a coating film on the release agent. The template processing device has a processing station for performing predetermined processing on a template and a template carrying-in-and-out station capable of storing a plurality of templates and carrying a template in and out of the processing station. The processing station has a release agent film forming block for forming a film of a release agent on the surface of a template, a coating liquid supplying unit for supplying a coating liquid on the formed release agent film, and a coating liquid filling unit for pressing the coating liquid coated on the release agent into a depression portion of the transfer pattern on the template.

Description

テンプレート処理装置、インプリントシステム、テンプレート処理方法及びコンピュータ記憶媒体Template processing apparatus, imprint system, template processing method, and computer storage medium
　本発明は、表面に転写パターンが形成されたテンプレート上に離型剤を成膜し、当該離型剤上に塗布膜を形成するテンプレート処理装置、当該テンプレート処理装置を備えたインプリントシステム、当該テンプレート処理装置を用いたテンプレート方法及びコンピュータ記憶媒体に関する。 The present invention relates to a template processing apparatus for forming a release agent on a template having a transfer pattern formed on the surface and forming a coating film on the release agent, an imprint system including the template processing apparatus, The present invention relates to a template method using a template processing apparatus and a computer storage medium.
　例えば半導体デバイスの製造工程では、例えば半導体ウェハ（以下、「ウェハ」という。）にフォトリソグラフィー処理を行い、ウェハ上に所定のレジストパターンを形成することが行われている。 For example, in a semiconductor device manufacturing process, for example, a semiconductor wafer (hereinafter referred to as “wafer”) is subjected to a photolithography process to form a predetermined resist pattern on the wafer.
　上述したレジストパターンを形成する際には、半導体デバイスのさらなる高集積化を図るため、当該レジストパターンの微細化が求められている。一般にフォトリソグラフィー処理における微細化の限界は、露光処理に用いる光の波長程度である。このため、従来より露光処理の光を短波長化することが進められている。しかしながら、露光光源の短波長化には技術的、コスト的な限界があり、光の短波長化を進める方法のみでは、例えば数ナノメートルオーダーの微細なレジストパターンを形成するのが困難な状況にある。 When forming the above-described resist pattern, the resist pattern is required to be miniaturized in order to further increase the integration of the semiconductor device. In general, the limit of miniaturization in the photolithography process is about the wavelength of light used for the exposure process. For this reason, it has been advancing to shorten the wavelength of exposure light. However, there are technical and cost limitations to shortening the wavelength of the exposure light source, and it is difficult to form a fine resist pattern on the order of several nanometers, for example, only by the method of advancing the wavelength of light. is there.
　そこで、近年、ウェハにフォトリソグラフィー処理を行う代わりに、いわゆるインプリントと呼ばれる方法を用いてウェハ上に微細なレジストパターンを形成することが提案されている（特許文献１）。このインプリント方法では、図２２に示すように表面に微細な転写パターンＣが形成され、且つ当該表面に離型剤Ｓが成膜されたテンプレートＴ（モールドや型と呼ばれることもある）が用いられる。 Therefore, in recent years, it has been proposed to form a fine resist pattern on a wafer by using a so-called imprint method instead of performing a photolithography process on the wafer (Patent Document 1). In this imprint method, a template T (also called a mold or a mold) in which a fine transfer pattern C is formed on the surface and a release agent S is formed on the surface as shown in FIG. 22 is used. It is done.
特開２００９－４３９９８号公報JP 2009-43998 A
　上述したインプリント方法では、先ず、図２４（ａ）に示すように、ウェハＷ上に形成されるレジストパターンにおいて、凸部に対応する部分（テンプレートＴの転写パターンＣにおける凹部に対応する部分）に塗布されるレジスト液の量は多く、凹部に対応する部分（転写パターンＣにおける凸部に対応する部分）に塗布されるレジスト液の量は少なくなるように、即ち転写パターンＣの開口率に応じてウェハＷ上にレジスト液が塗布され、レジスト膜Ｒが形成される。そして、図２４（ｂ）に示すようにレジスト膜Ｒに、離型剤Ｓが成膜されたテンプレートＴが押し付けられ、転写パターンＣが転写され、レジストパターンＰが形成される。このとき、レジスト膜Ｒに光が照射され、レジスト膜Ｒが光重合する。その後、図２４（ｃ）に示すようにテンプレートＴを上昇させて、ウェハＷ上にレジストパターンＰが形成される。 In the imprint method described above, first, as shown in FIG. 24A, in the resist pattern formed on the wafer W, a portion corresponding to the convex portion (a portion corresponding to the concave portion in the transfer pattern C of the template T). The amount of the resist solution applied to the transfer pattern C is large, and the amount of the resist solution applied to the portion corresponding to the concave portion (the portion corresponding to the convex portion in the transfer pattern C) is reduced, that is, to the aperture ratio of the transfer pattern C. Accordingly, a resist solution is applied on the wafer W, and a resist film R is formed. Then, as shown in FIG. 24B, the template T on which the release agent S is formed is pressed against the resist film R, the transfer pattern C is transferred, and the resist pattern P is formed. At this time, the resist film R is irradiated with light, and the resist film R is photopolymerized. Thereafter, as shown in FIG. 24C, the template T is raised and a resist pattern P is formed on the wafer W.
　しかしながら、図２４に示す方法においては、先ず図２４（ａ）に示すように、ウェハＷ上の所定の位置に正確にレジスト膜Ｒを形成する必要がある。このため、ウェハＷ上にレジスト液の塗布を行うに際して、レジスト液を塗布する、例えばレジスト液ノズルとウェハＷとのアライメントを正確に行う必要がある。さらに、図２４（ｂ）に示すようにテンプレートＴの転写パターンＣを転写する際、開口率に応じてウェハＷ上にレジスト液を塗布することで形成されたレジスト膜Ｒと、テンプレートＴの転写パターンＣとのアライメントが取れていないと、転写パターンＣがレジスト膜Ｒに精度よく転写されない。したがって、上述のインプリント方法においては、レジスト膜Ｒの形成時、及びパターン転写時の２度に渡ってアライメントを高精度で行う必要がある。このため、アライメントに時間を要するためスループット向上の妨げとなっていた。また、アライメントを複数回行う必要があるため、アライメント毎の誤差が重畳され、結果として高精度のアライメントが困難となるという問題があった。 However, in the method shown in FIG. 24, first, as shown in FIG. 24A, it is necessary to accurately form a resist film R at a predetermined position on the wafer W. For this reason, when applying the resist solution on the wafer W, it is necessary to apply the resist solution, for example, to accurately align the resist solution nozzle and the wafer W. Furthermore, as shown in FIG. 24B, when transferring the transfer pattern C of the template T, the resist film R formed by applying a resist solution on the wafer W according to the aperture ratio, and the transfer of the template T. If the alignment with the pattern C is not achieved, the transfer pattern C is not accurately transferred to the resist film R. Therefore, in the above-described imprint method, it is necessary to perform alignment with high accuracy twice during the formation of the resist film R and during pattern transfer. For this reason, it takes time for alignment, which hinders throughput improvement. In addition, since it is necessary to perform the alignment a plurality of times, an error for each alignment is superimposed, resulting in a problem that high-precision alignment becomes difficult.
　この点について、発明者らがアライメントに要する時間を短縮すべく鋭意検討し、例えば下記に示す方法を見出した。 In this regard, the inventors diligently studied to shorten the time required for alignment, and found, for example, the following method.
　図２５（ａ）に示すように、先ず離型剤Ｓが成膜されたテンプレートＴ上にレジスト液を塗布してレジスト膜Ｒを形成する。次いで、図２５（ｂ）に示すように当該レジスト膜Ｒが形成されたテンプレートＴを上昇させウェハＷに押し付けると共に、レジスト膜Ｒに光を照射し、レジスト膜を光重合する。その後、図２５（ｃ）に示すように、テンプレートＴを下降させて、ウェハＷ上にレジストパターンＰを形成する。 As shown in FIG. 25A, first, a resist solution is applied to a template T on which a release agent S is formed to form a resist film R. Next, as shown in FIG. 25B, the template T on which the resist film R is formed is raised and pressed against the wafer W, and the resist film R is irradiated with light to photopolymerize the resist film. Thereafter, the template T is lowered to form a resist pattern P on the wafer W, as shown in FIG.
　しかしながら、図２５に示す方法においては、離型剤Ｓが成膜され撥液性が高まった状態のテンプレートＴにレジスト液を塗布するため、離型剤Ｓの有する撥液性により、図２６に示すように転写パターンＣの窪み部Ｕにレジスト液Ｒ１が入り込まないという、新たな問題が生じた。この場合、当該レジスト液Ｒ１が窪み部Ｕの内部において液滴の状態で留まってしまい、液滴の形状がウェハＷ上のレジストパターンＰにそのまま転写されてしまうため、ウェハＷ上に所定のレジストパターンＰを適切に形成することができない。 However, in the method shown in FIG. 25, the resist solution is applied to the template T in a state where the release agent S is formed and the liquid repellency is increased. that resist solution R 1 does not enter into the recess portion U of the transfer pattern C as shown, a new problem arises. In this case, it will remain in the interior of the resist solution R 1 is recess U in the form of droplets, the shape of the droplet from being directly transferred to the resist pattern P on the wafer W, the predetermined on the wafer W The resist pattern P cannot be formed properly.
　本発明は、かかる点に鑑みてなされたものであり、テンプレート表面に成膜された離型剤上に塗布膜を適切に形成し、パターン転写時のアライメントを不要とすることを目的とする。 The present invention has been made in view of the above points, and an object of the present invention is to appropriately form a coating film on a release agent formed on the surface of a template and eliminate the need for alignment during pattern transfer.
　前記の目的を達成するため、本発明は、表面に転写パターンが形成されたテンプレート上に離型剤を成膜し、当該離型剤上に塗布膜を形成するテンプレート処理装置であって、前記テンプレートに所定の処理を行う処理ステーションと、複数の前記テンプレートを保有可能で、且つ前記処理ステーションに対して前記テンプレートを搬入出するテンプレート搬入出ステーションと、を有し、前記処理ステーションは、前記テンプレートの表面に離型剤を成膜する離型剤成膜ブロックと、前記成膜された離型剤上に塗布液を供給する塗布液供給部と、前記離型剤上に塗布された塗布液を前記テンプレートの転写パターンの窪み部に押し込む塗布液充填部と、を有する。 In order to achieve the above object, the present invention provides a template processing apparatus for forming a release agent on a template having a transfer pattern formed on the surface and forming a coating film on the release agent, A processing station that performs a predetermined process on the template; and a template loading / unloading station that can hold a plurality of the templates and that loads the template into and out of the processing station. A release agent film-forming block for forming a release agent on the surface of the film, a coating liquid supply unit for supplying a coating liquid onto the formed release agent, and a coating liquid applied on the release agent And a coating liquid filling part that pushes the liquid into the depression part of the transfer pattern of the template.
　本発明によれば、処理ステーションにおいて、離型剤成膜ラインでテンプレートの表面に離型剤を成膜した後、離型剤上に塗布した塗布液を塗布液充填部によりテンプレートの転写パターンの窪み部に押し込むことができる。すなわち、テンプレートの転写パターンの窪み部に塗布液を隙間な充填することができる。したがって、このように塗布液が成膜されたテンプレートを用いて基板上所定のパターンを形成する場合、基板上にテンプレートの転写パターンが適切に転写された所定のパターンを形成することができる。また、塗布液が成膜されたテンプレートを用いて基板にパターンを形成する場合、従来行っていた、基板上の塗布膜とテンプレートの転写パターンとのアライメント調整が不要となる。したがって、スループットを向上させることができる。 According to the present invention, in the processing station, after forming the release agent on the surface of the template in the release agent film forming line, the coating liquid applied on the release agent is applied to the transfer pattern of the template by the application liquid filling unit. It can be pushed into the recess. That is, the coating liquid can be filled in the recesses of the template transfer pattern with a gap. Therefore, when forming a predetermined pattern on the substrate using the template on which the coating liquid is formed in this way, it is possible to form the predetermined pattern on which the transfer pattern of the template is appropriately transferred on the substrate. Further, when a pattern is formed on a substrate using a template on which a coating solution is formed, alignment adjustment between the coating film on the substrate and the transfer pattern of the template, which has been conventionally performed, becomes unnecessary. Therefore, throughput can be improved.
　別な観点による本発明は、前記テンプレート処理装置を備えたインプリントシステムであって、前記処理ステーションで表面に離型剤が成膜された前記テンプレートを用いて、前記転写パターンを基板上に形成される塗布膜に転写し、当該塗布膜に所定のパターンを形成するインプリントユニットと、複数の前記基板を保有可能で、前記インプリントユニットに対して前記基板を搬入出する基板搬入出ステーションと、を有する。 According to another aspect of the present invention, there is provided an imprint system including the template processing apparatus, wherein the transfer pattern is formed on a substrate using the template having a release agent formed on the surface thereof at the processing station. An imprint unit that transfers to the coating film and forms a predetermined pattern on the coating film; and a substrate loading / unloading station that can hold a plurality of the substrates and that loads and unloads the substrate to and from the imprint unit. Have.
　また別な観点による本発明は、表面に転写パターンが形成されたテンプレート上に離型剤を成膜し、当該離型剤上に塗布膜を形成するテンプレート処理方法であって、前記テンプレートの表面に離型剤を成膜し、前記成膜された離型剤上に塗布液を塗布し、前記離型剤上に塗布された塗布液を前記テンプレートの転写パターンの窪み部に押し込む、というプロセスを有している。 Another aspect of the present invention is a template processing method in which a release agent is formed on a template having a transfer pattern formed on the surface, and a coating film is formed on the release agent. A process of forming a release agent into a film, applying a coating solution onto the formed release agent, and pushing the coating solution applied onto the release agent into a recess of the template transfer pattern have.
　また別な観点による本発明は、前記テンプレート処理方法をテンプレート処理装置によって実行させるために、当該テンプレート処理装置を制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体である。 Another aspect of the present invention is a readable computer storage medium storing a program that operates on a computer of a control unit that controls the template processing apparatus in order to cause the template processing apparatus to execute the template processing method. .
　本発明によれば、テンプレート表面に成膜された離型剤上に塗布膜を適切に形成することができる。 According to the present invention, the coating film can be appropriately formed on the release agent formed on the template surface.
本実施の形態にかかるテンプレート処理装置の構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the template processing apparatus concerning this Embodiment. テンプレートの斜視図である。It is a perspective view of a template. トランジションユニットの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of a transition unit. 搬送ラインの各処理ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of each processing unit of a conveyance line. 搬送ラインの各処理ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of each processing unit of a conveyance line. レジスト塗布ユニットの構成の概略を示す横断面図である。It is a cross-sectional view which shows the outline of a structure of a resist application unit. レジスト膜の形成工程におけるテンプレートの状態を模式的に示した説明図であり、図７（ａ）はテンプレートの表面にレジスト液が供給された様子を示し、図７（ｂ）はスキージにより窪み部にレジスト液が押し込まれる様子を示し、図７（ｃ）はテンプレートの表面にレジスト膜が形成された様子を示す。FIG. 7A is an explanatory diagram schematically showing a state of a template in a resist film forming process, FIG. 7A shows a state in which a resist solution is supplied to the surface of the template, and FIG. FIG. 7 (c) shows a state in which a resist film is formed on the surface of the template. 離型剤処理の各工程を示したフローチャートである。It is the flowchart which showed each process of the mold release agent process. 離型剤処理及びレジスト膜成膜の各工程におけるテンプレートの状態を模式的に示した説明図であり、図９（ａ）はテンプレートの表面が洗浄された様子を示し、図９（ｂ）はテンプレートの表面に離型剤が塗布された様子を示し、図９（ｃ）はテンプレート上の離型剤が焼成された様子を示し、図９（ｄ）はテンプレート上に離型剤が成膜された様子を示し、図９（ｅ）はテンプレート上にレジスト液が供給された様子を示し、図９（ｆ）はスキージにより窪み部にレジスト液が押し込まれる様子を示し、図９（ｇ）はテンプレート上にレジスト膜が成膜された様子を示す説明図である。It is explanatory drawing which showed typically the state of the template in each process of mold release agent processing and resist film formation, FIG.9 (a) shows a mode that the surface of the template was wash | cleaned, FIG.9 (b) FIG. 9 (c) shows a state in which the release agent is applied to the surface of the template, FIG. 9 (c) shows a state in which the release agent on the template is baked, and FIG. 9 (d) shows a film formation of the release agent on the template. FIG. 9 (e) shows a state in which the resist solution is supplied onto the template, FIG. 9 (f) shows a state in which the resist solution is pushed into the recess by the squeegee, and FIG. 9 (g). FIG. 4 is an explanatory view showing a state in which a resist film is formed on a template. ローラにより窪み部にレジスト液が押し込まれる様子を模式的に示した説明図である。It is explanatory drawing which showed typically a mode that a resist liquid was pushed in the hollow part with the roller. ブラシにより窪み部にレジスト液が押し込まれる様子を模式的に示した説明図である。It is explanatory drawing which showed typically a mode that a resist liquid was pushed into the hollow part with the brush. レジスト液の上面にフィルタを配置して窪み部にレジスト液を押し込む様子を模式的に示した説明図である。It is explanatory drawing which showed typically a mode that a filter was arrange | positioned on the upper surface of a resist liquid, and a resist liquid was pushed in into a hollow part. テンプレート上に配置したフィルタにレジスト液が供給された状態を模式的に示した説明図である。It is explanatory drawing which showed typically the state by which the resist liquid was supplied to the filter arrange | positioned on the template. 他の実施の形態にかかるテンプレート処理装置の構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the template processing apparatus concerning other embodiment. スタンプユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a stamp unit. レジスト膜成膜の各工程におけるテンプレート及びスタンプの状態を模式的に示した説明図であり、図１６（ａ）はスタンプの表面にレジスト液が塗布される様子を示し、図１６（ｂ）はスタンプがテンプレートに押し付けられた様子を示し、図１６（ｃ）はテンプレート上にレジスト膜が成膜された様子を示す。It is explanatory drawing which showed typically the state of the template and stamp in each process of resist film formation, FIG.16 (a) shows a mode that a resist liquid is apply | coated to the surface of a stamp, FIG.16 (b) A state where the stamp is pressed against the template is shown, and FIG. 16C shows a state where a resist film is formed on the template. ホルダーの平面図である。It is a top view of a holder. ホルダーの縦断面図である。It is a longitudinal cross-sectional view of a holder. 本実施の形態にかかるインプリントシステムの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the imprint system concerning this Embodiment. インプリントユニットの構成の概略を示す横断面図である。It is a cross-sectional view which shows the outline of a structure of an imprint unit. インプリントユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of the imprint unit. インプリント処理の各工程を示したフローチャートである。It is the flowchart which showed each process of the imprint process. インプリント処理の各工程におけるテンプレートとウェハの状態を模式的に示した説明図であり、図２３（ａ）はテンプレートをウェハに押し付けた様子を示し、図２３（ｂ）はウェハ上のレジスト膜を光重合させた様子を示し、図２３（ｃ）はウェハ上にレジストパターンが形成された様子を示し、図２３（ｄ）はウェハ上の残存膜が除去された様子を示す。It is explanatory drawing which showed typically the state of the template and wafer in each process of an imprint process, Fig.23 (a) shows a mode that the template was pressed on the wafer, FIG.23 (b) is a resist film on a wafer. FIG. 23C shows a state in which a resist pattern is formed on the wafer, and FIG. 23D shows a state in which the remaining film on the wafer is removed. 従来のインプリント処理の各工程におけるテンプレートとウェハの状態を模式的に示した説明図であり、図２４（ａ）はウェハ上にレジスト液が塗布された様子を示し、図２４（ｂ）はウェハ上のレジスト膜を光重合させた様子を示し、図２４（ｃ）はウェハ上にレジストパターンが形成された様子を示す説明図である。It is explanatory drawing which showed typically the state of the template and wafer in each process of the conventional imprint process, Fig.24 (a) shows a mode that the resist liquid was apply | coated on the wafer, FIG.24 (b) FIG. 24C is a diagram illustrating a state in which a resist pattern is formed on the wafer. インプリント処理の各工程におけるテンプレートとウェハの状態を模式的に示した説明図であり、図２５（ａ）はテンプレートにレジスト膜が成膜された様子を示し、図２５（ｂ）はウェハ上のレジスト膜を光重合させた様子を示し、図２５（ｃ）はウェハ上にレジストパターンが形成された様子を示す説明図である。It is explanatory drawing which showed typically the state of the template and wafer in each process of an imprint process, Fig.25 (a) shows a mode that the resist film was formed into a template, FIG.25 (b) is on a wafer. FIG. 25C is an explanatory view showing a state in which a resist pattern is formed on the wafer. テンプレートの表面にレジスト液が供給された様子を模式的に示す説明図である。It is explanatory drawing which shows typically a mode that the resist liquid was supplied to the surface of the template.
　以下、本発明の実施の形態について説明する。図１は、本実施の形態にかかるテンプレート処理装置１の構成の概略を示す平面図である。 Hereinafter, embodiments of the present invention will be described. FIG. 1 is a plan view schematically showing the configuration of the template processing apparatus 1 according to the present embodiment.
　本実施の形態のテンプレート処理装置１では、図２に示すように直方体形状を有し、表面に所定の転写パターンＣが形成されたテンプレートＴが用いられる。以下、転写パターンＣが形成されているテンプレートＴの面を表面Ｔ１といい、当該表面Ｔ１と反対側の面を裏面Ｔ２という。なお、テンプレートＴには、可視光、近紫外光、紫外線などの光を透過可能な透明材料、例えばガラスが用いられる。 In the template processing apparatus 1 of the present embodiment, a template T having a rectangular parallelepiped shape and having a predetermined transfer pattern C formed on the surface is used as shown in FIG. Hereinafter, the transfer pattern C means the side of the template T which is formed with the surface T 1, the surface T 1 opposite to the surface of the backside T 2. For the template T, a transparent material that can transmit visible light, near ultraviolet light, ultraviolet light, or the like, such as glass, is used.
　テンプレート処理装置１は、図１に示すように複数、例えば５枚のテンプレートＴをカセット単位で外部とテンプレート処理装置１との間で搬入出したり、テンプレートカセットＣＴに対してテンプレートＴを搬入出したりするテンプレート搬入出ステーション２と、テンプレートＴに所定の処理を施す複数の処理ユニットを備えた処理ステーション３とを一体に接続した構成を有している。 Template processing unit 1 includes a plurality as shown in FIG. 1, for example, five of the template T or transferring, between the outside and the template processing apparatus 1 with the cassette unit, carrying out a template T the template cassette C T The template loading / unloading station 2 and the processing station 3 including a plurality of processing units for performing predetermined processing on the template T are integrally connected.
　テンプレート搬入出ステーション２には、カセット載置台１０が設けられている。カセット載置台１０は、複数のテンプレートカセットＣＴをＸ方向（図１中の上下方向）に一列に載置自在になっている。すなわち、テンプレート搬入出ステーション２は、複数のテンプレートＴを保有可能に構成されている。 The template loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 can mount a plurality of template cassettes CT in a line in the X direction (vertical direction in FIG. 1). That is, the template carry-in / out station 2 is configured to be capable of holding a plurality of templates T.
　テンプレート搬入出ステーション２には、Ｘ方向に延伸する搬送路１１上を移動可能なテンプレート搬送体１２が設けられている。テンプレート搬送体１２は、鉛直方向及び鉛直周り（θ方向）にも移動自在であり、テンプレートカセットＣＴと処理ステーション３との間でテンプレートＴを搬送できる。 The template carry-in / out station 2 is provided with a template carrier 12 that can move on a conveyance path 11 extending in the X direction. The template transport body 12 is also movable in the vertical direction and the vertical direction (θ direction), and can transport the template T between the template cassette CT and the processing station 3.
　処理ステーション３は、テンプレートＴの搬送ラインＡを備えている。搬送ラインＡは、処理ステーション３において、正面側（図１のＸ方向負方向側）に配置されＹ方向に延びるラインＡ１と、テンプレート搬入出ステーション２と反対外側の端部においてＸ方向に延びるラインＡ２と、背面側（図１のＸ方向正方向側）においてＹ方向に延びるラインＡ３とをこの順で接続した構成を有している。搬送ラインＡには、後述する複数の搬送用コロ３０が並べて配置され、コロ搬送（ローラーコンベア方式）によりテンプレートＴを搬送することができる。すなわち、テンプレート搬入出ステーション２から処理ステーション３に搬送されたテンプレートＴは、ラインＡ１、Ａ２、Ａ３を順次搬送される。 The processing station 3 includes a transfer line A for the template T. In the processing station 3, the transfer line A is arranged on the front side (X direction negative direction side in FIG. 1) and extends in the Y direction, and a line extending in the X direction at the outer end opposite to the template loading / unloading station 2. A2 and a line A3 extending in the Y direction on the back side (X direction positive direction side in FIG. 1) are connected in this order. A plurality of transfer rollers 30 described later are arranged side by side on the transfer line A, and the template T can be transferred by roller transfer (roller conveyor system). That is, the template T transferred from the template loading / unloading station 2 to the processing station 3 is sequentially transferred along the lines A1, A2, and A3.
　ラインＡ１には、テンプレート搬入出ステーション２側から順に、テンプレートＴの受け渡しを行うためのトランジションユニット２０、テンプレートＴ上に離型剤が成膜される前の表面Ｔ１を洗浄する前洗浄ユニット２１、テンプレートＴに液体状の離型剤を塗布する離型剤塗布ユニット２２、テンプレートＴを加熱処理する加熱ユニット２３が一列に配置されている。 The line A1, in order from the template carry-out station 2 side, the transition unit 20 for passing the template T, the pre-cleaning unit release agent on the template T is to clean the surface T 1 of the before the deposition 21 A mold release agent coating unit 22 for applying a liquid mold release agent to the template T and a heating unit 23 for heating the template T are arranged in a row.
　ラインＡ２には、テンプレートＴの温度を調節する温度調節ユニット２４が配置されている。 In the line A2, a temperature adjustment unit 24 for adjusting the temperature of the template T is arranged.
　ラインＡ３には、テンプレート搬入出ステーション２側に向けて順に、テンプレートＴ上の離型剤をリンスするリンスユニット２５、テンプレートＴの離型剤上にレジスト液を塗布するレジスト塗布ユニット２６、トランジションユニット２７が一列に配置されている。なお、本実施の形態では、処理ユニット２１～２５で離型剤成膜ラインを形成している。 In line A3, in order toward the template loading / unloading station 2 side, a rinsing unit 25 for rinsing the release agent on the template T, a resist application unit 26 for applying a resist solution on the release agent of the template T, and a transition unit 27 are arranged in a line. In this embodiment, the processing units 21 to 25 form a release agent film forming line.
　次に、上述した搬送ラインＡにおけるテンプレートＴの搬送機構について説明する。搬送ラインＡには、図３～図５に示すように、複数の搬送用コロ３０が搬送ラインＡに沿った方向に並べて配置されている。各搬送用コロ３０は、搬送ラインＡに沿った方向と直角方向に延伸する中心軸を回転軸として回転自在に構成されている。また、複数の搬送用コロ３０のうち、少なくとも一の搬送用コロ３０には、例えばモータなどを内蔵した駆動機構（図示せず）が設けられている。そして、テンプレートＴは、これら搬送用コロ３０上をトランジションユニット２０、２７間で搬送される。 Next, the transport mechanism for the template T in the transport line A described above will be described. In the transport line A, a plurality of transport rollers 30 are arranged side by side in the direction along the transport line A, as shown in FIGS. Each conveyance roller 30 is configured to be rotatable about a central axis extending in a direction perpendicular to the direction along the conveyance line A as a rotation axis. In addition, among the plurality of transfer rollers 30, at least one transfer roller 30 is provided with a drive mechanism (not shown) including a motor, for example. The template T is transported between the transition units 20 and 27 on the transport rollers 30.
　次に、上述した搬送ラインＡのトランジションユニット２０、２７の構成について説明する。搬送ラインＡのトランジションユニット２０は、図３に示すようにテンプレートＴを下方から支持し昇降させるための昇降ピン４０を有している。昇降ピン４０は、搬送用コロ３０の下方に設けられた昇降駆動部４１により上下動できる。また、昇降ピン４０は、搬送ラインＡに沿って並べて配置された複数の搬送用コロ３０間を挿通するよう配置されている。この昇降ピン４０により、テンプレートＴは、テンプレート搬送体１２から搬送用コロ３０に載置される。 Next, the configuration of the transition units 20 and 27 of the transfer line A described above will be described. As shown in FIG. 3, the transition unit 20 of the transport line A has lifting pins 40 for supporting and lifting the template T from below. The raising / lowering pin 40 can be moved up and down by the raising / lowering drive part 41 provided under the conveyance roller 30. Further, the elevating pins 40 are arranged so as to be inserted between the plurality of conveying rollers 30 arranged side by side along the conveying line A. With the elevating pins 40, the template T is placed on the transfer roller 30 from the template transfer body 12.
　なお、トランジションユニット２７の構成は、上述したトランジションユニット２０の構成と同様であるので説明を省略する。 Note that the configuration of the transition unit 27 is the same as the configuration of the transition unit 20 described above, and a description thereof will be omitted.
　次に、上述した搬送ラインＡの各処理ユニット２１～２６の構成について、図４及び図５に基づいて説明する。なお、搬送ラインＡは、先に図１に示したようにラインＡ２において直角方向に折れ曲がっているが、図４においては、構成の理解の容易さを優先させるため、直線状で示されている。 Next, the configuration of each of the processing units 21 to 26 in the transfer line A will be described with reference to FIGS. The transport line A is bent in the direction perpendicular to the line A2 as shown in FIG. 1, but is shown in a straight line in FIG. 4 in order to give priority to the understanding of the configuration. .
　搬送ラインＡには、図４及び図５に示すようにケーシング５０が設けられている。ケーシング５０内は複数の仕切壁５１によって区画され、区画された各空間が処理ユニット２１～２６をそれぞれ構成している。これら仕切壁５１及びケーシング５０のトランジションユニット２０、２７側の側面には、搬送用コロ３０に対応する高さにテンプレートＴの搬入出口５２がそれぞれ形成されている。なお、各搬入出口５２には、開閉シャッタ（図示せず）が設けられ、各処理ユニット２１～２６の内部を密閉可能になっていてもよい。 The conveyance line A is provided with a casing 50 as shown in FIGS. The inside of the casing 50 is partitioned by a plurality of partition walls 51, and the partitioned spaces constitute processing units 21 to 26, respectively. On the side surfaces of the partition wall 51 and the casing 50 on the side of the transition units 20 and 27, a loading / unloading port 52 for the template T is formed at a height corresponding to the transfer roller 30. Each loading / unloading port 52 may be provided with an open / close shutter (not shown) so that the inside of each processing unit 21 to 26 can be sealed.
　前洗浄ユニット２１は、図４に示すようにテンプレートＴに紫外線を照射する紫外線照射部６０を有している。紫外線照射部６０は、搬送用コロ３０の上方に配置され、テンプレートＴの幅方向（搬送用コロ３０の長手方向）に延伸している。そして、搬送用コロ３０上を搬送中のテンプレートＴの表面Ｔ１に紫外線を照射することで、テンプレートＴの表面Ｔ１全面に紫外線が照射される。 As shown in FIG. 4, the pre-cleaning unit 21 has an ultraviolet irradiation unit 60 that irradiates the template T with ultraviolet rays. The ultraviolet irradiation unit 60 is disposed above the transport roller 30 and extends in the width direction of the template T (longitudinal direction of the transport roller 30). Then, the entire surface T 1 of the template T is irradiated with ultraviolet rays by irradiating the surface T 1 of the template T being conveyed on the conveyance roller 30 with ultraviolet rays.
　離型剤塗布ユニット２２は、テンプレートＴ上に離型剤を供給する離型剤供給部としての離型剤ノズル６１を有している。離型剤ノズル６１は、搬送用コロ３０の上方に配置されている。また、離型剤ノズル６１は、テンプレートＴの幅方向に延伸し、その下面には、スリット状の供給口（図示せず）が形成されている。そして、搬送用コロ３０上を搬送中のテンプレートＴの表面Ｔ１に離型剤ノズル６１から離型剤を供給して、当該表面Ｔ１の全面に離型剤が塗布される。離型剤塗布ユニット２２には、テンプレートＴから落下した離型剤を回収して排出する排出管（図示せず）と、内部の雰囲気を排気する排気管（図示せず）がそれぞれ接続されている。なお、離型剤の材料には、後述するウェハ上のレジスト膜に対して撥液性を有する材料、例えばフッ素樹脂等が用いられる。 The release agent application unit 22 has a release agent nozzle 61 as a release agent supply unit that supplies the release agent onto the template T. The release agent nozzle 61 is disposed above the conveying roller 30. The release agent nozzle 61 extends in the width direction of the template T, and a slit-like supply port (not shown) is formed on the lower surface thereof. Then, by supplying a release agent to the surface T 1 from the release agent nozzle 61 of the template T being conveyed to conveying roller 30 above, the release agent is applied to the entire surface of the surface T 1. The release agent application unit 22 is connected to a discharge pipe (not shown) for collecting and discharging the release agent dropped from the template T and an exhaust pipe (not shown) for exhausting the internal atmosphere. Yes. Note that a material having a liquid repellency with respect to a resist film on the wafer, which will be described later, such as a fluororesin, is used as the material of the release agent.
　加熱ユニット２３は、搬送用コロ３０の上方に配置された熱板６２を有している。熱板６２の内部には、例えば給電により発熱するヒータが設けられており、熱板６２を所定の設定温度に調節できる。また、熱板６２は、テンプレートＴの幅方向に延伸し、搬送用コロ３０上を搬送中のテンプレートＴを表面Ｔ１側（転写パターンＣ側）から加熱できる。なお、加熱ユニット２３には、内部の雰囲気を排気する排気管（図示せず）が接続されている。また、図示の例では、熱板６２はテンプレートＴを表面Ｔ１側から加熱しているが、テンプレートＴを裏面Ｔ２側から加熱するようにしてもよい。すなわち、熱板は、搬送用コロ３０と同じ高さに配置されていてもよく、あるいは搬送用コロ３０の下方に配置されていてもよい。さらに、これら熱板を両方配置して、テンプレートＴを表面Ｔ１と裏面Ｔ２の両側から加熱してもよい。 The heating unit 23 has a hot plate 62 disposed above the transfer roller 30. For example, a heater that generates heat by power feeding is provided inside the hot plate 62, and the hot plate 62 can be adjusted to a predetermined set temperature. The heat plate 62 extends in the width direction of the template T, can be heated template T being conveyed to conveying roller 30 above the surface T 1 side (transfer pattern C side). The heating unit 23 is connected to an exhaust pipe (not shown) that exhausts the internal atmosphere. In the example shown, the heating plate 62 is heated template T from the surface T 1 side, may be heated to template T from the back T 2 side. That is, the hot plate may be arranged at the same height as the conveying roller 30 or may be arranged below the conveying roller 30. Furthermore, by both placing these hot plate, the template T may be heated from the both surfaces T 1 and back T 2.
　温度調節ユニット２４では、搬送用コロ３０の一部が温度調節用コロ３０ａを構成している。温度調節用コロ３０ａの内部には、テンプレートＴを冷却する冷却水が循環している。また、搬送用コロ３０の上方には、例えば窒素等の不活性ガスや乾燥空気などの気体ガスを下方に吹き付けるガス供給部６３が配置されている。ガス供給部６３は、テンプレートＴの幅方向に延伸し、搬送中のテンプレートＴの表面Ｔ１全面に気体ガスを吹き付けることができる。これら温度調節用コロ３０ａとガス供給部６３によって、テンプレートＴは所定の温度に調節される。なお、温度調節ユニット２４には、内部の雰囲気を排気する排気管（図示せず）が接続されている。 In the temperature adjustment unit 24, a part of the conveyance roller 30 constitutes a temperature adjustment roller 30a. Cooling water for cooling the template T circulates inside the temperature adjusting roller 30a. Further, a gas supply unit 63 that blows an inert gas such as nitrogen or a gas gas such as dry air downward is disposed above the transfer roller 30. Gas supply unit 63 extends in the width direction of the template T, it is possible to blow air gas on the surface T 1 entire template T being conveyed. The template T is adjusted to a predetermined temperature by the temperature adjusting roller 30a and the gas supply unit 63. The temperature control unit 24 is connected to an exhaust pipe (not shown) that exhausts the internal atmosphere.
　リンスユニット２５は、図５に示すようにテンプレートＴ上に離型剤のリンス液としての有機溶剤を供給するリンス液ノズル６４と、テンプレートＴ上に例えば窒素等の不活性ガスや乾燥空気などの気体ガスを吹き付けるガスノズル６５とを有している。リンス液ノズル６４とガスノズル６５は、搬送用コロ３０の上方であって、温度調節ユニット２４側からこの順に配置されている。また、リンス液ノズル６４とガスノズル６５は、テンプレートＴの幅方向にそれぞれ延伸し、その下面にはスリット状の供給口（図示せず）がそれぞれ形成されている。そして、搬送用コロ３０上を搬送中のテンプレートＴ上の離型剤をリンス液ノズル６４によってリンスし、その後リンスされたテンプレートＴの表面Ｔ１をガスノズル６５によって乾燥させることができる。なお、リンスユニット２５には、テンプレートＴから落下した有機溶剤を回収して排出する排出管（図示せず）と、内部の雰囲気を排気する排気管（図示せず）がそれぞれ接続されている。 As shown in FIG. 5, the rinsing unit 25 includes a rinsing liquid nozzle 64 for supplying an organic solvent as a rinsing liquid for the release agent onto the template T, and an inert gas such as nitrogen or dry air on the template T. A gas nozzle 65 for blowing a gas gas. The rinsing liquid nozzle 64 and the gas nozzle 65 are arranged above the conveying roller 30 in this order from the temperature adjustment unit 24 side. Moreover, the rinse liquid nozzle 64 and the gas nozzle 65 are each extended | stretched in the width direction of the template T, and the slit-shaped supply port (not shown) is formed in the lower surface, respectively. Then, the release agent on the template T being conveyed on the conveyance roller 30 can be rinsed by the rinsing liquid nozzle 64, and then the surface T 1 of the rinsed template T can be dried by the gas nozzle 65. The rinse unit 25 is connected to a discharge pipe (not shown) for collecting and discharging the organic solvent dropped from the template T and an exhaust pipe (not shown) for exhausting the internal atmosphere.
　レジスト塗布ユニット２６は、テンプレートＴの離型剤上に塗布液としてのレジスト液を供給するレジスト液ノズル７０と、離型剤上に塗布されたレジスト液に押し当てて、テンプレートＴの転写パターンＣの窪み部にレジスト液を押し込む塗布液充填部としてのスキージ７１を有している。レジスト液ノズル７０及びスキージ７１は、搬送用コロ３０の上方に配置されている。図６に示すように、ケーシング５０内のＹ方向正方向（図６の右方向）側には、Ｘ方向（図６の上下方向）に沿って延伸するレール７２が設けられている。レール７２には、アーム７３が取り付けられており、レジスト塗布ノズル２６はこのアーム７３により支持されている。 The resist coating unit 26 presses the resist liquid nozzle 70 for supplying a resist liquid as a coating liquid onto the mold release agent of the template T, and the resist liquid applied on the mold release agent, thereby transferring the transfer pattern C of the template T. The squeegee 71 is provided as a coating solution filling portion for pushing the resist solution into the depression. The resist solution nozzle 70 and the squeegee 71 are disposed above the transfer roller 30. As shown in FIG. 6, a rail 72 extending along the X direction (vertical direction in FIG. 6) is provided on the Y direction positive direction (right direction in FIG. 6) side in the casing 50. An arm 73 is attached to the rail 72, and the resist coating nozzle 26 is supported by the arm 73.
　レジスト液ノズル７０には、例えばインクジェット方式のノズルが用いられ、レジスト液ノズル７０の下部には、長手方向に沿って一列に形成された複数の供給口（図示せず）が形成されている。そして、レジスト液ノズル７０は、レジスト液の供給タイミング、レジスト液の供給量等を厳密に制御できる。 For example, an ink jet type nozzle is used as the resist solution nozzle 70, and a plurality of supply ports (not shown) formed in a line along the longitudinal direction are formed below the resist solution nozzle 70. The resist solution nozzle 70 can strictly control the resist solution supply timing, the resist solution supply amount, and the like.
　アーム７３は、アーム駆動部７４により、レール７２上を移動自在である。これにより、レジスト液ノズル７２は、ケーシング５０内の、例えばＸ方向正方向側の外方に設置された待機部７５から搬送用コロ３０上のテンプレートＴの上方まで移動でき、さらに当該テンプレートＴの表面上をＸ方向に移動できる。また、アーム７３は、ノズル駆動部７４によって昇降自在であり、レジスト液ノズル７２の高さを調整できる。 The arm 73 is movable on the rail 72 by an arm driving unit 74. As a result, the resist solution nozzle 72 can move from the standby unit 75 installed outside the casing 50, for example, on the positive side in the X direction, to above the template T on the transfer roller 30. Can move in the X direction on the surface. Further, the arm 73 can be moved up and down by a nozzle driving unit 74, and the height of the resist solution nozzle 72 can be adjusted.
　また、ケーシング５０内のＹ方向負方向（図６の左方向）側には、Ｘ方向（図６の上下方向）に沿って延伸するレール７６が同様に設けられている。レール７６には、アーム７７が取り付けられており、スキージ７１はこのアーム７７により支持されている。アーム７７はアーム駆動部７８によりレール７６上を移動自在である。ケーシング５０内の、Ｘ方向負方向側の外方には待機部７９が設置されている。アーム７７等の動作については上述のアーム７３等と同様であるので、説明を省略する。 Further, a rail 76 extending in the X direction (up and down direction in FIG. 6) is similarly provided on the Y direction negative direction (left direction in FIG. 6) in the casing 50. An arm 77 is attached to the rail 76, and the squeegee 71 is supported by the arm 77. The arm 77 is movable on the rail 76 by an arm driving unit 78. A standby unit 79 is installed outside the casing 50 on the X direction negative direction side. Since the operation of the arm 77 and the like is the same as that of the above-described arm 73 and the like, description thereof is omitted.
　スキージ７１のレジスト液と接触する表面は、レジスト液に対して撥液性を有する材料、例えばフッ素樹脂等により撥液処理されている。なお、撥液処理としては、スキージ７１の表面を撥液性の材料でコーティングするのではなく、例えばスキージ７１そのものが、撥液性を有する、例えばポリウレタンなどの材料により形成されていてもよい。 The surface of the squeegee 71 in contact with the resist solution is subjected to a liquid repellent treatment with a material having liquid repellency with respect to the resist solution, for example, a fluororesin. As the liquid repellent treatment, the surface of the squeegee 71 is not coated with a liquid repellent material, but the squeegee 71 itself may be formed of a material having liquid repellency, such as polyurethane.
　そして、レジスト塗布ユニット２６内において、レジスト液ノズル７０からテンプレートＴの表面Ｔ１に成膜された離型剤Ｓ上にレジスト液Ｒ１が供給される。なお、この時点においてレジスト液Ｒ１は、図７（ａ）に示すように、離型剤Ｓの撥水性によりテンプレートＴの転写パターンＣの窪み部Ｕの内部には完全に入り込まず、液滴の状態で留まっている。次いで、スキージ７１をレジスト液Ｒ１に押し当て、図７（ｂ）に示すようにスキージ７１をレジスト液に押し当てた状態で図６のＸ方向正方向に移動させ、スキージ７１によりテンプレートＴの転写パターンＣの窪み部Ｕにレジスト液Ｒ１を押し込むことにより窪み部Ｕ内にレジスト液Ｒ１を隙間なく充填する。こうして、図７（ｃ）に示すように離型剤Ｓ上にレジスト膜Ｒを形成する。なお、図７では、スキージ７１を移動させながらレジスト液Ｒ１の押し込みを行っていたが、例えば、テンプレートＴを搬送用コロ３０により図６のＸ方向正方向（図６の上方向）に移動させることで、スキージ７１の位置を固定した状態であっても、テンプレートＴをスキージ７１に対して相対的に移動させることが可能であるため、必ずしも、スキージ７１を移動自在に構成する必要はない。この場合、レール７６が不要となる。また、レジスト液ノズル７０についても、スキージ７１と同様に、レール７２は必ずしも必要ではない。 In the resist coating unit 26, the resist solution R 1 is supplied from the resist solution nozzle 70 onto the release agent S formed on the surface T 1 of the template T. At this time, as shown in FIG. 7A, the resist solution R 1 does not completely enter the recess U of the transfer pattern C of the template T due to the water repellency of the release agent S, Stay in the state of. Then, pressing the squeegee 71 in the resist solution R 1, is moved in the positive direction in the X-direction of FIG. 6 in a state of pressing the squeegee 71 to resist liquid as shown in FIG. 7 (b), the squeegee 71 of the template T By pushing the resist solution R 1 into the recess U of the transfer pattern C, the recess R is filled with the resist solution R 1 without a gap. Thus, a resist film R is formed on the release agent S as shown in FIG. In FIG. 7, had been pushing the resist solution R 1 while moving the squeegee 71 moves, for example, by carrying rollers 30 a template T in the positive direction in the X-direction of FIG. 6 (upward direction in FIG. 6) By doing so, the template T can be moved relative to the squeegee 71 even when the position of the squeegee 71 is fixed, and therefore, the squeegee 71 is not necessarily configured to be movable. . In this case, the rail 76 becomes unnecessary. In addition, as with the squeegee 71, the rail 72 is not necessarily required for the resist solution nozzle 70 as well.
　以上のテンプレート処理装置１には、図１に示すように制御部１００が設けられている。制御部１００は、例えばコンピュータであり、プログラム格納部（図示せず）を有している。プログラム格納部には、テンプレート搬入出ステーション２と処理ステーション３との間のテンプレートＴの搬送や、処理ステーション３における駆動系の動作などを制御して、テンプレート処理装置１における後述する離型剤処理を実行するプログラムが格納されている。なお、このプログラムは、例えばコンピュータ読み取り可能なハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルデスク（ＭＯ）、メモリーカードなどのコンピュータに読み取り可能な記憶媒体に記録されていたものであって、その記憶媒体から制御部１００にインストールされたものであってもよい。 In the template processing apparatus 1 described above, a control unit 100 is provided as shown in FIG. The control unit 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit controls the transfer of the template T between the template loading / unloading station 2 and the processing station 3, the operation of the drive system in the processing station 3, and the like. The program that executes is stored. This program is recorded in a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), memory card, or the like. Or installed in the control unit 100 from the storage medium.
　本実施の形態にかかるテンプレート処理装置１は以上のように構成されている。次に、そのテンプレート処理装置１において、テンプレートＴ上に離型剤Ｓを成膜し、当該離型剤Ｓ上へのレジスト膜Ｒの形成について説明する。図８は、このテンプレート処理の主な処理フローを示し、図９は、各工程におけるテンプレートＴの状態を示している。 The template processing apparatus 1 according to the present embodiment is configured as described above. Next, in the template processing apparatus 1, the release agent S is formed on the template T, and the formation of the resist film R on the release agent S will be described. FIG. 8 shows the main processing flow of this template processing, and FIG. 9 shows the state of the template T in each step.
　先ず、テンプレート搬送体１２によって、カセット載置台１０上のテンプレートカセットＣＴからテンプレートＴが取り出され、処理ステーション３のトランジションユニット２０に搬送される（図８の工程Ｇ１）。このとき、テンプレートカセットＣＴ内には、テンプレートＴは、転写パターンＣが形成された表面Ｔ１が上方を向くように収容されており、この状態でテンプレートＴはトランジションユニット２０に搬送される。 First, the template carrier 12, the template T is taken from the template cassette C T on the cassette mounting table 10, (step G1 of Fig. 8) to be conveyed to the transition unit 20 in the processing station 3. At this time, in the template cassette C T, the template T, the surface T 1 of the transfer pattern C is formed is accommodated so as to face upward, the template T in this state is conveyed to the transition unit 20.
　トランジションユニット２０内に搬送されたテンプレートＴは、昇降ピン４０によって搬送用コロ３０上に載置され、搬送ラインＡに沿ってコロ搬送により所定の速度で搬送される。搬送ラインＡでは、トランジションユニット２０、前洗浄ユニット２１、離型剤塗布ユニット２２、加熱ユニット２３、温度調節ユニット２４、リンスユニット２５、レジスト塗布ユニット２６、トランジションユニット２７に順次搬送され、各処理ユニット２１～２６において搬送中のテンプレートＴに所定の処理が行われる。 The template T transported into the transition unit 20 is placed on the transport roller 30 by the lifting pins 40 and transported along the transport line A by roller transport at a predetermined speed. In the transfer line A, the transfer unit A, the pre-cleaning unit 21, the release agent application unit 22, the heating unit 23, the temperature adjustment unit 24, the rinse unit 25, the resist application unit 26, and the transition unit 27 are sequentially transferred to each processing unit. In 21 to 26, a predetermined process is performed on the template T being conveyed.
　すなわち、搬送ラインＡでは、先ず、前洗浄ユニット２１において、紫外線照射部６０からテンプレートＴ上に紫外線が照射され、図９（ａ）に示すようにテンプレートＴの表面Ｔ１が洗浄される（図８の工程Ｇ２）。続いて、離型剤塗布ユニット２２において、離型剤ノズル６１からテンプレートＴ上に離型剤Ｓを供給し、図９（ｂ）に示すようにテンプレートＴの表面Ｔ１全面に離型剤Ｓが塗布される（図８の工程Ｇ３）。その後、加熱ユニット２３において、熱板６２によりテンプレートＴが例えば２００℃に加熱され、図９（ｃ）に示すようにテンプレートＴ上の離型剤Ｓが焼成される（図８の工程Ｇ４）。その後、温度調節ユニット２４において、温度調節用コロ３０ａとガス供給部６３によりテンプレートＴが所定の温度に調節される。その後、リンスユニット２５において、リンス液ノズル６４からテンプレートＴに有機溶剤を供給して、当該テンプレートＴ上の離型剤Ｓの未反応部のみを剥離させる。こうして、図９（ｄ）に示すようにテンプレートＴ上に転写パターンＣに沿った離型剤Ｓが成膜される（図８の工程Ｇ５）。続いて、同リンスユニット２５において、ガスノズル６５からテンプレートＴ上に気体ガスを吹き付け、その表面Ｔ１が乾燥される。なお、離型剤Ｓの未反応部とは、離型剤ＳがテンプレートＴの表面Ｔ１と化学反応して当該表面Ｔ１と吸着する部分以外をいう。 That is, in the transport line A, first, in the pre-cleaning unit 21, ultraviolet rays are irradiated from the ultraviolet irradiation unit 60 on the template T, the surface T 1 of the template T is cleaned as shown in FIG. 9 (a) (FIG. Step 8 G2). Subsequently, the release agent coating unit 22 supplies the release agent S on the template T from the release agent nozzle 61, a release agent to the surface T 1 the entire surface of the template T as shown in FIG. 9 (b) S Is applied (step G3 in FIG. 8). Thereafter, in the heating unit 23, the template T is heated to, for example, 200 ° C. by the hot plate 62, and the release agent S on the template T is baked as shown in FIG. 9C (step G4 in FIG. 8). Thereafter, in the temperature adjustment unit 24, the template T is adjusted to a predetermined temperature by the temperature adjustment roller 30 a and the gas supply unit 63. Thereafter, in the rinsing unit 25, an organic solvent is supplied to the template T from the rinsing liquid nozzle 64, and only the unreacted portion of the release agent S on the template T is peeled off. Thus, as shown in FIG. 9D, the release agent S along the transfer pattern C is formed on the template T (step G5 in FIG. 8). Subsequently, in the rinsing unit 25 blows air gas on the template T from the gas nozzle 65, the surface T 1 is is dried. The unreacted part of the release agent S means a part other than the part where the release agent S chemically reacts with the surface T 1 of the template T and adsorbs to the surface T 1 .
　その後、テンプレートＴがレジスト塗布ユニット２６に搬送されると、レジスト液ノズル７０を図６のＸ方向に移動させ、図９（ｅ）に示すようにテンプレートＴの成膜された離型剤Ｓ上にレジスト液Ｒ１を供給する（図８の工程Ｇ６）。この際、制御部１００により、レジスト液ノズル７０から供給されるレジスト液Ｒ１の供給タイミングや供給量等が制御される。すなわち、テンプレートＴの転写パターンＣにおいて、凸部に形成された部分（ウェハＷ上に形成されるレジストパターンにおいて凹部に対応する部分）に塗布されるレジスト液Ｒ１の量は少なく、窪み部Ｕに対応する部分（レジストパターンにおける凸部に対応する部分）に塗布されるレジスト液Ｒ１の量は多くなるように制御される。このように転写パターンＣの開口率に応じてウェハＷ上にレジスト液Ｒ１が塗布される。 Thereafter, when the template T is transported to the resist coating unit 26, the resist solution nozzle 70 is moved in the X direction of FIG. 6, and the release agent S on which the template T is formed is applied as shown in FIG. supplying a resist solution R 1 (step G6 in FIG. 8). At this time, the control unit 100 controls the supply timing, supply amount, and the like of the resist solution R 1 supplied from the resist solution nozzle 70. That is, in the transfer pattern C of the template T, the amount of the resist solution R 1 applied to a portion formed on the convex portion (portion corresponding to the recess in the resist pattern formed on the wafer W) is small, the recessed portion U the amount of the resist solution R 1 applied to the corresponding portion (portion corresponding to the convex portion of the resist pattern) in is controlled to be larger. Thus, the resist solution R 1 is applied on the wafer W in accordance with the aperture ratio of the transfer pattern C.
　テンプレートＴ上にレジスト液Ｒ１が塗布されると、図９（ｆ）に示すようにスキージ７１をレジスト液Ｒ１に押し当てた状態でスキージ７１を図６のＸ方向に移動させ、テンプレートＴの転写パターンＣの窪み部Ｕにレジスト液Ｒ１を押し込む。これにより、図９（ｇ）に示すように、テンプレートＴ上の離型剤Ｓ上にレジスト膜Ｒが形成される（図８の工程Ｇ７）。 When the resist solution R 1 is applied onto the template T, the squeegee 71 is moved in the X direction in FIG. 6 with the squeegee 71 pressed against the resist solution R 1 as shown in FIG. pushing the resist solution R 1 of the recess portion U of the transfer pattern C. As a result, as shown in FIG. 9G, a resist film R is formed on the release agent S on the template T (step G7 in FIG. 8).
　その後、トランジションユニット２７に搬送されたテンプレートＴは、昇降ピン４０によりテンプレート搬送体１２に受け渡され、テンプレートカセットＣＴに戻される（図８の工程Ｇ８）。こうしてテンプレート処理装置１における一連の離型剤処理が終了する。 Thereafter, the template T carried to the transit unit 27 is delivered to the template carrier 12 by the lifting pins 40, and returned to the template cassette C T (step in FIG. 8 G8). Thus, a series of release agent processing in the template processing apparatus 1 is completed.
　以上の実施の形態によれば、レジスト塗布ユニット２６において、テンプレートＴの表面Ｔ１に成膜された離型剤Ｓ上にレジスト液Ｒ１を供給した後、レジスト液Ｒ１をスキージ７１によりテンプレートＴの転写パターンＣの窪み部Ｕに押し込むことで、レジスト液Ｒ１を窪み部Ｕに隙間なく充填し、離型剤Ｓ上にレジスト膜Ｒを形成することができる。したがって、このテンプレートＴを用いてウェハ上のレジスト膜に所定のレジストパターンを形成する場合、ウェハ上にテンプレートＴの転写パターンＣが適切に転写された所定のパターンを形成することができる。なお、このテンプレートＴを用いてウェハ上に所定のレジストパターンを形成する場合の作用、効果等については、後述において詳細に説明する。 According to the above embodiment, in the resist coating unit 26, after supplying the resist solution R 1 on the surface T 1 release agent is deposited on the S where the template T, the resist solution R 1 by the squeegee 71 Template By pushing into the recess U of the transfer pattern C of T, the resist solution R 1 can be filled in the recess U without any gap, and the resist film R can be formed on the release agent S. Therefore, when a predetermined resist pattern is formed on the resist film on the wafer using the template T, a predetermined pattern in which the transfer pattern C of the template T is appropriately transferred can be formed on the wafer. Note that the operation, effect, and the like in the case of forming a predetermined resist pattern on the wafer using the template T will be described in detail later.
　また、レジスト膜Ｒが成膜されたテンプレートＴを用いてウェハにパターンを形成する場合、従来行っていた、ウェハ上のレジスト膜ＲとテンプレートＴの転写パターンＣとのアライメント調整が不要となる。したがって、ウェハ処理のスループットを向上させることができる。 Further, when a pattern is formed on the wafer using the template T on which the resist film R is formed, alignment adjustment between the resist film R on the wafer and the transfer pattern C of the template T, which has been conventionally performed, becomes unnecessary. Therefore, the throughput of wafer processing can be improved.
　さらに、テンプレート搬入出ステーション２が複数のテンプレートＴを保有できるので、当該テンプレート搬入出ステーション２から処理ステーション３にテンプレートＴを連続して搬送することができる。また、処理ステーション３においては、複数の搬送用コロ３０によって搬送ラインＡに配置された各種処理ユニット２１～２７にテンプレートＴがコロ搬送され、当該搬送中のテンプレートＴに所定の処理を行うことができるので、複数のテンプレートＴに対して所定の処理を連続して行うことができる。したがって、これら複数のテンプレートＴに対して、レジスト膜Ｒを連続的に成膜することができる。 Furthermore, since the template loading / unloading station 2 can hold a plurality of templates T, the template T can be continuously transferred from the template loading / unloading station 2 to the processing station 3. In the processing station 3, the template T is roller-transferred to the various processing units 21 to 27 arranged on the transfer line A by a plurality of transfer rollers 30, and a predetermined process is performed on the template T being transferred. Therefore, predetermined processing can be continuously performed on the plurality of templates T. Therefore, the resist film R can be continuously formed on the plurality of templates T.
　ここで、テンプレートＴは、例えば６．３５ｍｍの厚みを有する。本実施の形態によれば、加熱ユニット２３内において、熱板６２が搬送用コロ３０の上方、すなわちテンプレートＴの転写パターンＣ側（表面Ｔ１側）に配置されているので、テンプレートＴの表面Ｔ１側から、当該表面Ｔ１上の離型剤Ｓを直接加熱することができる。したがって、テンプレートＴの厚みに関わらず、離型剤Ｓを効率よく加熱して焼成することができる。また、熱板６２がテンプレートＴの下方に配置されている場合でも、熱伝導によってテンプレートＴの裏面Ｔ２側から離型剤Ｓを効率よく加熱することができる。 Here, the template T has a thickness of 6.35 mm, for example. According to the present embodiment, since the heating plate 62 is arranged above the transfer roller 30, that is, on the transfer pattern C side (surface T 1 side) of the template T in the heating unit 23, the surface of the template T From the T 1 side, the release agent S on the surface T 1 can be directly heated. Therefore, regardless of the thickness of the template T, the release agent S can be efficiently heated and fired. Further, even when the heating plate 62 is disposed below the template T, it is possible to efficiently heat the release agent S from the back T 2 side of the template T by thermal conduction.
　また、スキージ７１はレジスト液Ｒ１と接触する表面が撥液処理されているので、スキージ７１にレジスト液Ｒ１が付着することを抑制できる。 Further, since the surface of the squeegee 71 that comes into contact with the resist solution R 1 is subjected to a liquid repellent treatment, the resist solution R 1 can be prevented from adhering to the squeegee 71.
　また、以上の実施の形態では、テンプレートＴの転写パターンＣの窪み部Ｕに押し込む塗布液充填部としてスキージ７１を用いていたが、塗布液充填部はスキージ７１に限定されるものではなく、レジスト液Ｒ１を転写パターンＣの窪み部Ｕに押し込みレジスト膜Ｒを形成できるものであれば、例えば図１０及び図１１に示すようにローラ１０１やブラシ１０２といったものを用いてもよい。かかる場合も、レジスト液Ｒ１と接触する表面は撥液処理されていることが好ましい。 Further, in the above embodiment, the squeegee 71 is used as the coating liquid filling portion to be pushed into the depression U of the transfer pattern C of the template T. However, the coating liquid filling portion is not limited to the squeegee 71, and the resist as long as the liquid R 1 can form a resist film R pushing the recess U of the transfer pattern C, may also be used such as roller 101 and brush 102 as shown in FIG. 10 and FIG. 11 for example. Even such a case, the surface in contact with the resist solution R 1 are preferably subjected to liquid repellent treatment.
　また、以上の実施の形態では、テンプレートＴに塗布されたレジスト液Ｒ１に直接スキージ７１を押し当てていたが、例えば図１２に示すように、テンプレートＴに塗布されたレジスト液Ｒ１の上面に撥液処理されたフィルタＦ１を配置し、当該フィルタＦ１を介してスキージ７１をレジスト液Ｒ１に押し当ててもよい。こうすることで、スキージ７１へのレジスト液Ｒ１の付着をさらに抑制することができる。また、例えばスキージ７１に付着したパーティクル等がテンプレートＴ側に付着することも抑制できる。 In the above embodiment, the squeegee 71 is pressed directly against the resist solution R 1 applied to the template T. However, as shown in FIG. 12, for example, the upper surface of the resist solution R 1 applied to the template T. to place the liquid-repellent treated filter F1, or by pressing a squeegee 71 via the filter F1 in the resist solution R 1. By doing so, adhesion of the resist solution R 1 to the squeegee 71 can be further suppressed. In addition, for example, particles attached to the squeegee 71 can be prevented from attaching to the template T side.
　また、フィルタＦ１に代えて、例えば図１３に示すように、フィルタＦ２をテンプレートＴの表面Ｔ１に成膜された離型剤Ｓの上面に配置し、フィルタＦ２の上面にレジスト液Ｒ１を塗布した後に、スキージ７１によりレジスト膜Ｒを形成するようにしてもよい。かかる場合、フィルタＦ２には、表面が撥液処理され且つレジスト液Ｒ１を浸透可能なものが用いられる。フィルタＦ２の上面にレジスト液Ｒ１を塗布することで、テンプレートＴの表面Ｔ１に形成されるレジスト膜Ｒにダスト等が付着することを抑制できる。 In place of the filter F1, for example, as shown in FIG. 13, place the filter F2 to the upper surface of the release agent S which is formed on the surface T 1 of the template T, the resist solution R 1 on the upper surface of the filter F2 After coating, the resist film R may be formed by the squeegee 71. In such a case, the filter F2, the surface capable permeate repellent treated and the resist solution R 1 is used. By applying a resist solution R 1 on the upper surface of the filter F2, it is possible to prevent the dust from adhering to the resist film R is formed on the surface T 1 of the template T.
　以上の実施の形態では、テンプレートＴ上への離型剤Ｓの塗布とテンプレートＴの加熱は、それぞれ別の処理ユニット（離型剤塗布ユニット２２と加熱ユニット２３）で行われていたが、一の処理ユニットで行われてもよい。すなわち、一の処理ユニット内に、上述した離型剤ノズル６１と熱板６２を搬送ラインＡに沿った方向にこの順で配置してもよい。 In the above embodiment, the application of the release agent S on the template T and the heating of the template T are performed in separate processing units (the release agent application unit 22 and the heating unit 23). The processing unit may be used. That is, the release agent nozzle 61 and the hot plate 62 described above may be arranged in this order in the direction along the transport line A in one processing unit.
　以上の実施の形態では、処理ステーション３のレジスト塗布ユニット２６において、テンプレートＴ上にレジスト液Ｒ１を供給することにより、テンプレートＴの表面Ｔ１にレジスト膜Ｒを形成していたが、その表面にレジスト液が塗布されたスタンプをテンプレートＴの表面Ｔ１に押し当てて行ってもよい。かかる場合、図１４に示すようにテンプレート処理装置１の搬送ラインＡには、図１に示したレジスト塗布ユニット２６に代えて、スタンプユニット１１０が配置される。すなわち、この場合、搬送ラインＡのラインＡ３には、温度調節ユニット２４、リンスユニット２５、スタンプユニット１１０、トランジションユニット２７が一列に配置される。ラインＡ１には、テンプレート搬入出ステーション２側から順に、トランジションユニット２０、前洗浄ユニット２１、離型剤塗布ユニット２２、加熱ユニット２３が一列に配置される。また、ラインＡ２には温度調節ユニット２４が配置される。 In the above embodiment, the resist film R is formed on the surface T 1 of the template T by supplying the resist solution R 1 onto the template T in the resist coating unit 26 of the processing station 3. resist solution may be performed by pressing a stamp is applied to the surface T 1 of the template T on. In this case, as shown in FIG. 14, a stamp unit 110 is arranged on the transport line A of the template processing apparatus 1 instead of the resist coating unit 26 shown in FIG. That is, in this case, the temperature adjustment unit 24, the rinse unit 25, the stamp unit 110, and the transition unit 27 are arranged in a line on the line A3 of the transport line A. In the line A1, a transition unit 20, a pre-cleaning unit 21, a release agent coating unit 22, and a heating unit 23 are arranged in a line in order from the template loading / unloading station 2 side. Moreover, the temperature control unit 24 is arrange | positioned at line A2.
　スタンプユニット１１０のケーシング５０内には、レジスト塗布ユニット２６と同様に、図１５に示すように搬送用コロ３０が配置されている。ケーシング５０の天井面には、図１５に示すようにＹ方向（図１５の左右方向）に沿って延伸するレール１１１が設けられている。レール１１１には、アーム１１２が取り付けられており、アーム１１２により、その表面が搬送用コロ３０、即ちテンプレートＴの表面Ｔ１と対向するように設けられたスタンプＭが支持されている。アーム１１２は、アーム駆動部１１３によりレール１１１上を移動自在である。これによりスタンプＭは、搬送用コロ３０上のテンプレートＴの上方まで移動できる。また、アーム１１２は、アーム駆動部１１２によって昇降自在であり、スタンプＭをテンプレートＴに対して押し当てることができる。なお、スタンプＭの表面Ｍ１は、離型剤Ｓよりも高い撥液性を有する材料によって撥液処理されている。 In the casing 50 of the stamp unit 110, as with the resist coating unit 26, a transfer roller 30 is arranged as shown in FIG. A rail 111 extending along the Y direction (left-right direction in FIG. 15) is provided on the ceiling surface of the casing 50 as shown in FIG. An arm 112 is attached to the rail 111, and a stamp M provided so that the surface of the arm 111 faces the transfer roller 30, that is, the surface T 1 of the template T, is supported. The arm 112 is movable on the rail 111 by the arm driving unit 113. As a result, the stamp M can move to above the template T on the conveyance roller 30. The arm 112 can be moved up and down by the arm driving unit 112 and can press the stamp M against the template T. Note that the surface M 1 of the stamp M is subjected to a liquid repellent treatment with a material having higher liquid repellency than the release agent S.
　図１５に示すように、搬送用コロ３０の上方であって、レール１１１の下方には、供給口（図示せず）が上方を向いて設けられたレジスト液ノズル７０が配置されている。搬送用コロ３０の下方の所定の位置には、テンプレートＴの位置検出用センサ１１４が設けられている。位置検出用センサ１１４は、搬送用コロ３０上を搬送されるテンプレートＴの、例えばＹ方向負方向側（図１５の左方向側）の端部を検出し、制御装置１００へ検出情報を出力する。 As shown in FIG. 15, a resist solution nozzle 70 provided with a supply port (not shown) facing upward is located above the transfer roller 30 and below the rail 111. A template T position detection sensor 114 is provided at a predetermined position below the conveyance roller 30. The position detection sensor 114 detects, for example, the Y direction negative direction side (left direction side in FIG. 15) of the template T conveyed on the conveyance roller 30, and outputs detection information to the control device 100. .
　次に、かかるスタンプユニット１１０において、テンプレートＴにレジスト膜Ｒを成膜する方法について説明する。 Next, a method for forming the resist film R on the template T in the stamp unit 110 will be described.
　スタンプユニット１１０内では、先ず、テンプレートＴが搬送用コロ３０上を図１５のＹ方向負方向側に搬送される。位置検出用センサ１１４によりテンプレートＴが検出されると、搬送用コロ３０はテンプレートＴの搬送を一時的に停止し、テンプレートＴを所定の位置で待機させる。次いで、スタンプＭがレール１１１に沿ってテンプレートＴに向かって移動する。そして、スタンプＭがレジスト液ノズル７０の上方を横切る際、図１６（ａ）に示すようにレジスト液ノズル７０からスタンプＭの表面Ｍ１に供給され、スタンプＭの表面Ｍ１にレジスト液Ｒ１が塗布される。 In the stamp unit 110, first, the template T is transported on the transport roller 30 in the Y direction negative direction side in FIG. When the template T is detected by the position detection sensor 114, the conveyance roller 30 temporarily stops the conveyance of the template T and makes the template T stand by at a predetermined position. Next, the stamp M moves along the rail 111 toward the template T. Then, when the stamp M crosses over the resist solution nozzle 70 is supplied from the resist solution nozzle 70 as shown in FIG. 16 (a) on the surface M 1 of the stamp M, the resist solution R 1 on the surface M 1 of the stamp M Is applied.
　その後、レジスト液Ｒ１が塗布されたスタンプＭがテンプレートＴの上方に移動し、次いで図１６（ｂ）に示すようにスタンプＭがテンプレートＴの表面Ｔ１に押し付けられる。この際、スタンプＭをテンプレートＴに押し付けることにより、テンプレートＴの転写パターンＣの窪み部Ｕにレジスト液Ｒ１が押し込まれ、窪み部Ｕ内にレジスト液Ｒ１が隙間なく充填される。その後、スタンプＭを上昇させ、図１６（ｃ）に示すようにテンプレートＴ上にレジスト膜Ｒが形成される。こうしてスタンプユニット１１０における一連のレジスト膜Ｒの成膜処理が終了する。なお、図１６においてはスタンプＭを移動させながらレジスト液Ｒ１の塗布を行っていたが、例えば、レジスト液ノズル７０を移動させてレジスト液Ｒ１の塗布を行ってもよい。また、レール１１１は、図１５においては、Ｙ方向に沿って配置されていたが、例えば図１５のＸ方向に沿って、即ち搬送ローラ３０の中心軸に平行に配置されていてもよい。 Thereafter, the stamp M coated with the resist solution R 1 moves above the template T, and then the stamp M is pressed against the surface T 1 of the template T as shown in FIG. In this case, by pressing the stamp M to the template T, the resist solution R 1 is pushed into the recess portion U of the transfer pattern C of the template T, the resist solution R 1 is filled without clearance in the recess portion U. Thereafter, the stamp M is raised, and a resist film R is formed on the template T as shown in FIG. In this way, a series of resist film R forming processes in the stamp unit 110 is completed. Although doing the coating of the resist solution R 1 while moving the stamp M in FIG. 16, for example, the resist solution nozzle 70 is moved may be performed applying the resist solution R 1. Further, although the rail 111 is disposed along the Y direction in FIG. 15, the rail 111 may be disposed along the X direction of FIG. 15, that is, parallel to the central axis of the transport roller 30.
　以上の実施の形態によれば、予めレジスト液Ｒ１が塗布されたスタンプＭテンプレートＴに押し付けるので、テンプレートＴへのレジスト液Ｒ１の塗布と、窪み部Ｕ内へのレジスト液Ｒ１の押し込み、即ちレジスト膜Ｒの成膜を一度に行うことができる。したがって、スタンプユニット１１０において、テンプレートＴに成膜された離型剤Ｓ上に円滑にレジスト膜Ｒを成膜することができ、これによって、テンプレート処理装置１におけるレジスト膜Ｒの成膜処理のスループットを向上させることができる。 According to the above embodiment, in advance since the resist solution R 1 is pressed against the coated stamped M template T, and the resist solution coating R 1 to the template T, pushing of the resist solution R 1 into the recess U That is, the resist film R can be formed at a time. Therefore, in the stamp unit 110, the resist film R can be smoothly formed on the release agent S formed on the template T, and thereby the throughput of the film formation process of the resist film R in the template processing apparatus 1 is achieved. Can be improved.
　なお、以上の実施の形態では、スタンプユニット１１０内において、レジスト液ノズル７０によりレジスト液Ｒ１の塗布のみを行っていたが、必要に応じて、例えば図１５に破線で示すように、レジスト液Ｒ１と接触する表面が上方を向いて設けられたスキージ７１を、テンプレートＴの搬送方向（図１２のＹ方向負方向）における、レジスト液ノズル７０の下流側に配置してもよい。 Incidentally, in the above embodiment, in the stamp unit 110, had been only coating the resist solution R 1 by the resist solution nozzle 70, as needed, as indicated by a broken line in FIG. 15 for example, the resist solution The squeegee 71 provided with the surface in contact with R 1 facing upward may be disposed on the downstream side of the resist solution nozzle 70 in the conveyance direction of the template T (Y direction negative direction in FIG. 12).
　以上の実施の形態では、テンプレート処理装置１において、テンプレートＴは個別に搬送され処理されていたが、図１７に示すように複数、例えば９枚のテンプレートＴが１つのホルダー１２０に保持されて処理されてもよい。かかる場合、ホルダー１２０には、図１８に示すように各テンプレートＴを収容するために下方に窪んだ収容部１２１が形成されている。収容部１２１の底面には例えば複数の吸引口（図示せず）が形成され、各テンプレートＴは収容部１２１内に吸着保持されるようになっている。 In the above embodiment, in the template processing apparatus 1, the templates T are individually conveyed and processed. However, as shown in FIG. 17, a plurality of, for example, nine templates T are held in one holder 120 and processed. May be. In such a case, the holder 120 is formed with a receiving portion 121 that is recessed downward to receive each template T as shown in FIG. For example, a plurality of suction ports (not shown) are formed on the bottom surface of the housing part 121, and each template T is sucked and held in the housing part 121.
　本実施の形態によれば、処理ステーション３において、複数のテンプレートＴに対して一度に所定の処理を行うことができる。したがって、短時間でより多くのテンプレートＴ上にレジスト膜を成膜することができ、レジスト処理のスループットを向上させることができる。 According to the present embodiment, the processing station 3 can perform predetermined processing on a plurality of templates T at a time. Therefore, a resist film can be formed on more templates T in a short time, and the throughput of resist processing can be improved.
　以上の実施の形態のテンプレート処理装置１は、図１９に示すようにインプリントシステム２００に配置されていてもよい。インプリントシステム２００は、テンプレートＴを用いて基板としてのウェハＷ上にレジストパターンを形成するインプリントユニット２１０と、複数、例えば２５枚のウェハＷをカセット単位で外部とインプリントシステム２００との間で搬入出したり、ウェハカセットＣＷに対してウェハＷを搬入出したりする基板搬入出ステーションとしてのウェハ搬入出ステーション２１１とを有している。インプリントシステム２００は、これらテンプレート処理装置１、インプリントユニット２１０、ウェハ搬入出ステーション２１１を一体に接続した構成を有している。 The template processing apparatus 1 of the above embodiment may be arranged in the imprint system 200 as shown in FIG. The imprint system 200 uses a template T to form a resist pattern on a wafer W as a substrate, and a plurality of, for example, 25 wafers W between the outside and the imprint system 200 in units of cassettes. A wafer loading / unloading station 211 is provided as a substrate loading / unloading station for loading / unloading and loading / unloading the wafer W to / from the wafer cassette CW . The imprint system 200 has a configuration in which the template processing apparatus 1, the imprint unit 210, and the wafer carry-in / out station 211 are integrally connected.
　テンプレート処理装置１の処理ステーション３内では、上述した搬送ラインＡからトランジションユニット２７を除いた搬送ラインＢが正面側（図１６のＸ方向負方向側）に一列に配置されている。すなわち、処理ステーション３の正面側には、トランジションユニット２０、前洗浄ユニット２１、離型剤塗布ユニット２２、加熱ユニット２３、温度調節ユニット２４、リンスユニット２５、レジスト塗布ユニット２６が直線的に一列に配置されている。 In the processing station 3 of the template processing apparatus 1, the transfer line B excluding the transition unit 27 from the transfer line A described above is arranged in a row on the front side (X direction negative direction side in FIG. 16). That is, on the front side of the processing station 3, the transition unit 20, the pre-cleaning unit 21, the release agent coating unit 22, the heating unit 23, the temperature adjustment unit 24, the rinse unit 25, and the resist coating unit 26 are linearly arranged in a line. Has been placed.
　処理ステーション３の背面側（図１９のＸ方向正方向側）には、テンプレートＴの搬送ラインＣが配置されている。搬送ラインＣのテンプレート搬入出ステーション２側の端部には、テンプレートＴの受け渡しを行うためのトランジションユニット２２０が設けられている。インプリントユニット２１０とトランジションユニット２２０との間には、上述した複数の搬送用コロ３０が設けられ、テンプレートＴの搬送が行われる。なお、トランジションユニット２２０の構成は、上述したトランジションユニット２０の構成と同様であるので、説明を省略する。 A transport line C for the template T is arranged on the back side of the processing station 3 (the positive side in the X direction in FIG. 19). A transition unit 220 for delivering the template T is provided at the end of the transfer line C on the template loading / unloading station 2 side. The plurality of transfer rollers 30 described above are provided between the imprint unit 210 and the transition unit 220, and the template T is transferred. Note that the configuration of the transition unit 220 is the same as the configuration of the transition unit 20 described above, and a description thereof will be omitted.
　ウェハ搬入出ステーション２１１には、カセット載置台２３０が設けられている。カセット載置台２３０は、複数のウェハカセットＣＷをＸ方向（図１９中の左右方向）に一列に載置自在になっている。すなわち、ウェハ搬入出ステーション２１１は、複数のウェハＷを保有可能に構成されている。 The wafer loading / unloading station 211 is provided with a cassette mounting table 230. The cassette mounting table 230 can mount a plurality of wafer cassettes CW in a row in the X direction (left and right direction in FIG. 19). That is, the wafer carry-in / out station 211 is configured to be capable of holding a plurality of wafers W.
　ウェハ搬入出ステーション２１１には、Ｘ方向に延伸する搬送路２３１上を移動可能なウェハ搬送体２３２が設けられている。ウェハ搬送体２３２は、鉛直方向及び鉛直周り（θ方向）にも移動自在であり、ウェハカセットＣＷとインプリントユニット２１０との間でウェハＷを搬送できる。 The wafer carry-in / out station 211 is provided with a wafer carrier 232 that can move on a conveyance path 231 extending in the X direction. The wafer carrier 232 is also movable in the vertical direction and around the vertical direction (θ direction), and can carry the wafer W between the wafer cassette CW and the imprint unit 210.
　ウェハ搬入出ステーション２１１には、ウェハＷの向きを調整するアライメントユニット２３３がさらに設けられている。アライメントユニット２３３では、例えばウェハＷのノッチ部の位置に基づいて、ウェハＷの向きが調整される。また、ウェハ搬入出ステーション２１１には、ウェハＷの表裏面を反転させる反転ユニット２３４が設けられている。 The wafer carry-in / out station 211 is further provided with an alignment unit 233 for adjusting the orientation of the wafer W. The alignment unit 233 adjusts the orientation of the wafer W based on the position of the notch portion of the wafer W, for example. The wafer carry-in / out station 211 is provided with a reversing unit 234 for reversing the front and back surfaces of the wafer W.
　次に、上述したインプリントユニット２１０の構成について説明する。インプリントユニット２１０は、図２０及び図２１に示すように側面にテンプレートＴの搬入出口Ｅ１とウェハＷの搬入出口Ｅ２が形成されたケーシング２４０を有している。 Next, the configuration of the above-described imprint unit 210 will be described. 20 and 21, the imprint unit 210 has a casing 240 in which a loading / unloading port E1 for the template T and a loading / unloading port E2 for the wafer W are formed on the side surfaces.
　ケーシング２４０内には図２０及び図２１に示すように、上述した複数の搬送用コロ３０が配置されている。ケーシング２４０内の搬送用コロ３０は、搬送ラインＢを通って搬入出口Ｅ１から搬送されたテンプレートＴを、後述するテンプレート保持部２４１の上方に搬送し、その後再び搬入出口Ｅ１から搬出するように、例えば図２０に示すように略Ｕ字状に並べて配置されている。
る。 As shown in FIGS. 20 and 21, the plurality of transfer rollers 30 described above are arranged in the casing 240. The conveyance roller 30 in the casing 240 conveys the template T conveyed from the loading / unloading port E1 through the conveyance line B to the upper side of the template holding unit 241 described later, and then unloads again from the loading / unloading port E1. For example, as shown in FIG. 20, they are arranged in a substantially U shape.
The
　搬送用コロ３０の中心軸の両端側には、例えばテンプレートＴの側面を支持する搬送ガイド（図示せず）が設けられ、テンプレートＴが略Ｕ字状に配置された搬送用コロ３０上を搬送される際に、当該Ｕ字状の箇所からテンプレートＴが落下することを防止している。 For example, a conveyance guide (not shown) that supports the side surface of the template T is provided at both ends of the central axis of the conveyance roller 30, and the template T is conveyed on the conveyance roller 30 arranged in a substantially U shape. When being done, the template T is prevented from dropping from the U-shaped portion.
　ケーシング２４０内の底面には、図２１に示すようにテンプレートＴの下面を保持するテンプレート保持部２４１が設けられている。テンプレート保持部２４１は、テンプレートＴの裏面Ｔ２の所定の位置を吸着保持するチャック２４２を有している。チャック２４２は、当該チャックの下方に設けられた移動機構２４３により鉛直方向に移動自在になっている。 A template holder 241 that holds the lower surface of the template T is provided on the bottom surface of the casing 240 as shown in FIG. Template holding portion 241, a predetermined position of the rear surface T 2 of the template T has a chuck 242 for holding suction. The chuck 242 is movable in the vertical direction by a moving mechanism 243 provided below the chuck.
　テンプレート保持部２４１は、チャック２４２に保持されたテンプレートＴの下方に設けられた光源２４４を有している。光源２４４からは、例えば可視光、近紫外光、紫外線などの光が発せられる。光源２４４の上方に対応する搬送用コロ３０は、例えば図２０に示すように光源２４４からの光を遮らないように光源２４４の上方に対応する位置が切りかかれた形状を有しており、この光源２４４からの光は、テンプレートＴを透過して上方に照射される。 The template holder 241 has a light source 244 provided below the template T held by the chuck 242. The light source 244 emits light such as visible light, near ultraviolet light, and ultraviolet light. The conveyance roller 30 corresponding to the upper side of the light source 244 has a shape in which the position corresponding to the upper side of the light source 244 is cut so as not to block the light from the light source 244 as shown in FIG. Light from the light source 244 is transmitted upward through the template T.
　ケーシング２４０の天井面であって、搬送用コロ３０の上方には、図２１に示すようにウェハ保持部２６０が設けられている。ウェハ保持部２６０は、ウェハＷの被処理面が下方を向くように、当該ウェハＷの裏面を吸着保持する。すなわち、ウェハ保持部２６０と搬送用コロ３０は、ウェハ保持部２６０に保持されたウェハＷと、搬送用コロ３０に載置されたテンプレートＴが対向するように配置されている。ウェハ保持部２６０は、当該ウェハ保持部２６０の上方に設けられた移動機構２６１によって水平方向に移動できるようになっている。 A wafer holder 260 is provided on the ceiling surface of the casing 240 and above the transfer roller 30 as shown in FIG. Wafer holder 260 sucks and holds the back surface of wafer W so that the surface to be processed of wafer W faces downward. That is, the wafer holding unit 260 and the transfer roller 30 are arranged so that the wafer W held by the wafer holding unit 260 and the template T placed on the transfer roller 30 face each other. The wafer holder 260 can be moved in the horizontal direction by a moving mechanism 261 provided above the wafer holder 260.
　本実施の形態にかかるインプリントシステム２００は以上のように構成されている。次に、そのインプリントシステム２００で行われるインプリント処理について説明する。図２２は、このインプリント処理の主な処理フローを示し、図２３は、このインプリント処理の各工程におけるテンプレートＴとウェハＷの状態を示している。 The imprint system 200 according to the present embodiment is configured as described above. Next, an imprint process performed in the imprint system 200 will be described. FIG. 22 shows the main processing flow of this imprint processing, and FIG. 23 shows the state of the template T and wafer W in each step of this imprint processing.
　先ず、テンプレート搬送体１２によって、テンプレート搬入出ステーション２から処理ステーション３にテンプレートＴが搬入される（図２２の工程Ｈ１）。処理ステーション３では、テンプレートＴの表面Ｔ１の洗浄（図２２の工程Ｈ２）、表面Ｔ１への離型剤Ｓの塗布（図２２の工程Ｈ３）、離型剤Ｓの焼成（図２２の工程Ｈ４）、離型剤Ｓのリンス（図２２の工程Ｈ５）が順次行われ、テンプレートＴの表面Ｔ１に離型剤Ｓが成膜される。その後、テンプレートＴにレジスト液Ｒ１が供給され（図２２の工程Ｈ６）、離型剤Ｓ上にレジスト膜Ｒが形成される（図２２の工程Ｈ７）。なお、これら工程Ｈ２～Ｈ７は、前記実施の形態における工程Ｇ２～Ｇ７と同様であるので、詳細な説明を省略する。 First, the template T is carried into the processing station 3 from the template carry-in / out station 2 by the template carrier 12 (step H1 in FIG. 22). In the processing station 3, the cleaning of the surface T 1 of the template T (in FIG. 22 step H2), (step H3 of the Fig. 22) the application of the release agent S on the surface T 1, the firing of the release agent S (in FIG. 22 step H4), rinsing of the release agent S (step H5 in FIG. 22) are sequentially performed, the release agent S is formed on the surface T 1 of the template T. Thereafter, the template T resist solution R 1 is supplied (step H6 in FIG. 22), the resist film R is formed on the release agent on S (step H7 in FIG. 22). Note that these steps H2 to H7 are the same as the steps G2 to G7 in the above embodiment, and thus detailed description thereof is omitted.
　その後、テンプレートＴは搬送用コロ３０によりインプリントユニット２１０に搬送され、テンプレート保持部２４１のチャック２４２に吸着保持される。 Thereafter, the template T is transported to the imprint unit 210 by the transport roller 30 and is sucked and held by the chuck 242 of the template holding unit 241.
　このように処理ステーション３においてテンプレートＴに所定の処理を行い、インプリントユニット２１０へテンプレートＴを搬送中に、ウェハ搬入出ステーション２１１では、ウェハ搬送体２３２により、カセット載置台２３０上のウェハカセットＣＷからウェハＷが取り出され、アライメントユニット２３３に搬送される。そして、アライメントユニット２３３において、ウェハＷのノッチ部の位置に基づいて、ウェハＷの向きが調整される。その後、ウェハＷは、反転ユニット２３４によって反転された後、インプリントユニット２１０に搬送される（図２２の工程Ｈ８）。 In this way, predetermined processing is performed on the template T in the processing station 3, and the template T is being transferred to the imprint unit 210. At the wafer loading / unloading station 211, the wafer cassette C W on the cassette mounting table 230 is transferred by the wafer transfer body 232. The wafer W is taken out from the wafer and transferred to the alignment unit 233. Then, the alignment unit 233 adjusts the orientation of the wafer W based on the position of the notch portion of the wafer W. Thereafter, the wafer W is reversed by the reversing unit 234 and then transferred to the imprint unit 210 (step H8 in FIG. 22).
　インプリントユニット２１０に搬送されたウェハＷは、ウェハ保持部２６０により吸着保持される。続いて、ウェハ保持部２６０に保持されたウェハＷを水平方向の所定の位置に移動させて位置合わせを行うと共に、テンプレート保持部２４１に保持されたテンプレートＴを所定の向きに回転させる。そして、図２３（ａ）の矢印に示すようにテンプレートＴをウェハＷ側に上昇させる。テンプレートＴは所定の位置まで上昇し、テンプレートＴの表面Ｔ１がウェハＷ上のレジスト膜Ｒに押し付けられる。なお、この所定の位置は、ウェハＷ上に形成されるレジストパターンの高さに基づいて設定される。続いて、光源２４４から光が照射される。光源２４４からの光は、図２３（ｂ）に示すようにテンプレートＴを透過してウェハＷ上のレジスト膜Ｒに照射され、これによりレジスト膜Ｒは光重合する。このようにしてウェハＷ上のレジスト膜ＲにテンプレートＴの転写パターンＣが転写され、レジストパターンＰが形成される（図２２の工程Ｈ９）。 The wafer W transferred to the imprint unit 210 is sucked and held by the wafer holder 260. Subsequently, the wafer W held by the wafer holder 260 is moved to a predetermined position in the horizontal direction for alignment, and the template T held by the template holder 241 is rotated in a predetermined direction. Then, the template T is raised to the wafer W side as shown by the arrow in FIG. The template T rises to a predetermined position, and the surface T 1 of the template T is pressed against the resist film R on the wafer W. The predetermined position is set based on the height of the resist pattern formed on the wafer W. Subsequently, light is emitted from the light source 244. The light from the light source 244 passes through the template T and is irradiated onto the resist film R on the wafer W as shown in FIG. 23B, whereby the resist film R is photopolymerized. In this manner, the transfer pattern C of the template T is transferred to the resist film R on the wafer W to form a resist pattern P (step H9 in FIG. 22).
　その後、図２３（ｃ）に示すようにテンプレートＴを下降させて、ウェハＷ上にレジストパターンＰを形成する（図２２の工程Ｈ１０）。 Thereafter, the template T is lowered as shown in FIG. 23C to form a resist pattern P on the wafer W (step H10 in FIG. 22).
　そして、ウェハＷ上にレジストパターンＰが形成されると、使用済みのテンプレートＴは搬送用コロ３０によりインプリントユニット２１０から搬送ラインＣに搬出される（図２２の工程Ｈ１１）。続いて、搬送ラインＢの搬送用コロ３０によって新たなテンプレートＴがインプリントユニット２１０に搬送され、インプリントユニット２１０内のテンプレートＴが交換される。テンプレートＴが交換されると、再びテンプレートＴをウェハＷ側に上昇させ、ウェハＷ上にレジストパターンＰが形成される。この作業が繰り返し行われる。 When the resist pattern P is formed on the wafer W, the used template T is unloaded from the imprint unit 210 to the transfer line C by the transfer roller 30 (step H11 in FIG. 22). Subsequently, a new template T is transported to the imprint unit 210 by the transport roller 30 on the transport line B, and the template T in the imprint unit 210 is replaced. When the template T is replaced, the template T is raised again to the wafer W side, and a resist pattern P is formed on the wafer W. This operation is repeated.
　レジストパターンＰが形成されたウェハＷは、ウェハ搬送体２３２に受け渡され、インプリントユニット２１０からウェハ搬入出ステーション２１１に搬送され、ウェハカセットＣＷに戻される（図２２の工程Ｈ１２）。なお、ウェハＷ上に形成されたレジストパターンＰの凹部には、薄いレジストの残存膜Ｌが残る場合があるが、例えばテンプレート処理装置１の外部において、図２３（ｄ）に示すように当該残存膜Ｌを除去してもよい。 The wafer W on which the resist pattern P is formed is transferred to the wafer carrier 232, transferred from the imprint unit 210 to the wafer carry-in / out station 211, and returned to the wafer cassette CW (step H12 in FIG. 22). A thin resist residual film L may remain in the concave portion of the resist pattern P formed on the wafer W. For example, the residual film L outside the template processing apparatus 1 as shown in FIG. The film L may be removed.
　搬送ラインＣの搬送用コロ３０に搬送された使用済みのテンプレートＴは、搬送用コロ３０に沿った速度でトランジションユニット２２０に搬送される。 The used template T transported to the transport roller 30 on the transport line C is transported to the transition unit 220 at a speed along the transport roller 30.
　トランジションユニット２２０に搬送された使用済みのテンプレートＴは、昇降ピン４０によりテンプレート搬送体１２に受け渡され、テンプレートカセットＣＴに戻される。このようにして、インプリントシステム２００において、テンプレートＴを連続的に交換しつつ、複数のウェハＷに対して所定のレジストパターンＰが連続的に形成される。 Template T already used, which are conveyed to the transition unit 220 is passed to the template carrier 12 by the lifting pins 40, and returned to the template cassette C T. In this way, in the imprint system 200, the predetermined resist pattern P is continuously formed on the plurality of wafers W while the template T is continuously replaced.
　以上の実施の形態によれば、テンプレートＴの表面Ｔ１に成膜された離型剤Ｓ上にレジスト液Ｒ１を供給した後、レジスト液Ｒ１をスキージ７１によりテンプレートＴの転写パターンＣの窪み部Ｕに押し込むことで、レジスト液Ｒ１を窪み部Ｕに隙間なく充填し、離型剤Ｓ上にレジスト膜Ｒを形成することができる。したがって、このテンプレートＴを用いてウェハ上のレジスト膜に所定のレジストパターンを形成する場合、ウェハ上にテンプレートＴの転写パターンＣが適切に転写された所定のパターンを形成することができる。 According to the above embodiment, after supplying the resist solution R 1 on the surface T 1 release agent is deposited on the S where the template T, the resist solution R 1 by the squeegee 71 of the transfer pattern C of the template T By pressing into the recess U, the resist solution R 1 can be filled in the recess U without any gap, and the resist film R can be formed on the release agent S. Therefore, when a predetermined resist pattern is formed on the resist film on the wafer using the template T, a predetermined pattern in which the transfer pattern C of the template T is appropriately transferred can be formed on the wafer.
　また、インプリントシステム２００はテンプレート処理装置１を有しているので、インプリントシステム２００において、テンプレートＴ上にレジスト膜Ｒを成膜しつつ、当該テンプレートＴをインプリントユニット２１０に連続的に供給できる。したがって、複数のウェハＷに対して所定のレジストパターンＰを連続的に形成することができる。また、これによって、半導体デバイスの量産化を実現することも可能となる。 Further, since the imprint system 200 includes the template processing apparatus 1, the template T can be continuously supplied to the imprint unit 210 while the resist film R is formed on the template T in the imprint system 200. . Therefore, the predetermined resist pattern P can be continuously formed on the plurality of wafers W. This also enables mass production of semiconductor devices.
　以上、添付図面を参照しながら本発明の好適な実施の形態について説明したが、本発明はかかる例に限定されない。当業者であれば、特許請求の範囲に記載された思想の範疇内において、各種の変更例または修正例に想到し得ることは明らかであり、それらについても当然に本発明の技術的範囲に属するものと了解される。本発明はこの例に限らず種々の態様を採りうるものである。本発明は、基板がウェハ以外のＦＰＤ（フラットパネルディスプレイ）、フォトマスク用のマスクレチクルなどの他の基板である場合にも適用できる。 The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
　本発明は、表面に転写パターンが形成されたテンプレート上に離型剤を成膜し、当該離型剤に所定の処理を行う際に有用であり、また当該テンプレートを用いて基板上に所定のパターンを形成する際に有用である。 INDUSTRIAL APPLICABILITY The present invention is useful when a release agent is formed on a template having a transfer pattern formed on the surface, and a predetermined treatment is performed on the release agent. This is useful when forming a pattern.
　　１　　テンプレート処理装置
　　２　　テンプレート搬入出ステーション
　　３　　処理ステーション
　　１２　テンプレート搬送体
　　２１　前洗浄ユニット
　　２２　離型剤塗布ユニット
　　２３　加熱ユニット
　　２４　温度調節ユニット
　　２５　リンスユニット
　　２６　レジスト塗布ユニット
　　２７　トランジションユニット
　　３０　搬送用コロ
　　３０ａ　温度調節用コロ
　　５０　ケーシング
　　５２　搬入出口
　　６１　離型剤ノズル
　　７０　レジスト液ノズル
　　７１　スキージ
　　７２　レール
　　７３　アーム
　　７４　アーム駆動部
　　７５　待機部
　　７６　レール
　　７７　アーム
　　７８　アーム駆動部
　　７９　待機部
　　１００　制御部
　　１０１　ローラ
　　１０２　ブラシ
　　１１０　スタンプユニット
　　１１１　レール
　　１１２　アーム
　　１１３　アーム駆動部
　　１１４　位置検出用センサ
　　１２０　ホルダー
　　１２１　収容部
　　２４０　ケーシング
　　２４１　テンプレート保持部
　　２４２　チャック
　　２４３　移動機構
　　２６０　ウェハ保持部
　　Ａ　　搬送ライン
　　Ｃ　　転写パターン
　　Ｆ１、Ｆ２　　フィルタ
　　Ｍ　　スタンプ
　　Ｐ　　レジストパターン
　　Ｒ　　レジスト膜
　　Ｒ１　 レジスト液
　　Ｓ　　離型剤
　　Ｔ　　テンプレート
　　Ｕ　　窪み部
　　Ｗ　　ウェハ DESCRIPTION OF SYMBOLS 1 Template processing apparatus 2 Template carrying in / out station 3 Processing station 12 Template conveyance body 21 Pre-cleaning unit 22 Release agent application unit 23 Heating unit 24 Temperature adjustment unit 25 Rinse unit 26 Resist application unit 27 Transition unit 30 Rolling roller 30a Temperature adjustment Roller 50 Casing 52 Loading / unloading port 61 Release agent nozzle 70 Resist liquid nozzle 71 Squeegee 72 Rail 73 Arm 74 Arm drive part 75 Standby part 76 Rail 77 Arm 78 Arm drive part 79 Standby part 100 Control part 101 Roller 102 Brush 110 Stamp unit 111 Rail 112 Arm 113 Arm Drive 114 Sensor for Position Detection 120 Holder 121 Housing 240 Casing 241 Template holder 242 Chuck 243 Movement mechanism 260 Wafer holder A Transfer line C Transfer pattern F1, F2 Filter M Stamp P Resist pattern R Resist film R 1 Resist liquid S Release agent T Template U Recessed part W Wafer

Claims (16)

  1. 表面に転写パターンが形成されたテンプレート上に離型剤を成膜し、当該離型剤上に塗布膜を形成するテンプレート処理装置であって、
    前記テンプレートに所定の処理を行う処理ステーションと、
    複数の前記テンプレートを保有可能で、且つ前記処理ステーションに対して前記テンプレートを搬入出するテンプレート搬入出ステーションと、を有し、
    前記処理ステーションは、
    前記テンプレートの表面に離型剤を成膜する離型剤成膜ブロックと、
    前記成膜された離型剤上に塗布液を供給する塗布液供給部と、
    前記離型剤上に塗布された塗布液を前記テンプレートの転写パターンの窪み部に押し込む塗布液充填部と、を有する。     A template processing apparatus for forming a release agent on a template having a transfer pattern formed on a surface and forming a coating film on the release agent,
    A processing station for performing predetermined processing on the template;
    A template loading / unloading station capable of holding a plurality of the templates and loading / unloading the template to / from the processing station;
    The processing station is
    A release agent film forming block for forming a release agent film on the surface of the template;
    A coating liquid supply section for supplying a coating liquid onto the film-forming release agent;
    And a coating liquid filling section that pushes the coating liquid coated on the mold release agent into the recess of the transfer pattern of the template.
  2. 請求項１に記載のテンプレート処理装置において、
    前記塗布液充填部は、スキージである。     The template processing apparatus according to claim 1,
    The coating liquid filling unit is a squeegee.
  3. 請求項１に記載のテンプレート処理装置において、
    前記塗布液充填部は、ローラである。     The template processing apparatus according to claim 1,
    The coating liquid filling unit is a roller.
  4. 請求項１に記載のテンプレート処理装置において、
    前記塗布液充填部は、ブラシである。     The template processing apparatus according to claim 1,
    The coating liquid filling unit is a brush.
  5. 請求項２に記載のテンプレート処理装置において、
    前記塗布液充填部の前記塗布液と接触する表面は、撥液処理されている。     The template processing apparatus according to claim 2,
    The surface of the coating liquid filling portion that comes into contact with the coating liquid is subjected to a liquid repellent treatment.
  6. 請求項１に記載のテンプレート処理装置において、
    前記離型剤上に塗布された塗布液の上面には、フィルタが配置され、前記塗布液充填部は、前記フィルタを介して前記塗布液を前記窪み部に押し込む。     The template processing apparatus according to claim 1,
    A filter is disposed on the upper surface of the coating liquid applied on the mold release agent, and the coating liquid filling unit pushes the coating liquid into the recess through the filter.
  7. 請求項１に記載のテンプレート処理装置において、
    前記離型剤上には前記塗布液が浸透可能なフィルタが配置され、
    前記塗布液は、前記フィルタ上に供給され、
    前記塗布液充填部は、前記フィルタを介して前記塗布液を前記窪み部に押し込む。     The template processing apparatus according to claim 1,
    A filter capable of penetrating the coating solution is disposed on the release agent,
    The coating liquid is supplied onto the filter,
    The coating solution filling unit pushes the coating solution into the recess through the filter.
  8. 請求項１に記載のテンプレート処理装置において、
    前記処理ステーションは、前記塗布液供給部と前記塗布液充填部に代えて、その表面に塗布液が塗布されたスタンプを有し、
    前記転写パターンの窪み部への前記塗布液の押し込みは、前記スタンプを前記転写パターンに押し当てることにより行う。     The template processing apparatus according to claim 1,
    In place of the coating liquid supply unit and the coating liquid filling unit, the processing station has a stamp with a coating liquid applied on the surface thereof,
    The application liquid is pushed into the recess of the transfer pattern by pressing the stamp against the transfer pattern.
  9. 請求項８に記載のテンプレート処理装置において、
    前記スタンプの表面は撥液処理されている。     The template processing apparatus according to claim 8, wherein
    The surface of the stamp is liquid repellent.
  10. 請求項１に記載のテンプレート処理装置において、
    複数の前記テンプレートは、一のホルダーに保持されている。     The template processing apparatus according to claim 1,
    The plurality of templates are held by one holder.
  11. 表面に転写パターンが形成されたテンプレート上に離型剤を成膜し、当該離型剤上に塗布膜を形成するテンプレート処理装置備えたインプリントシステムであって、
    前記テンプレート処理装置は、
    前記テンプレートに所定の処理を行う処理ステーションと、
    複数の前記テンプレートを保有可能で、且つ前記処理ステーションに対して前記テンプレートを搬入出するテンプレート搬入出ステーションと、を有し、
    前記処理ステーションは、
    前記テンプレートの表面に離型剤を成膜する離型剤成膜ブロックと、
    前記成膜された離型剤上に塗布液を供給する塗布液供給部と、
    前記離型剤上に塗布された塗布液を前記テンプレートの転写パターンの窪み部に押し込む塗布液充填部と、を有し、
    前記処理ステーションで表面に離型剤が成膜された前記テンプレートを用いて、前記転写パターンを基板上に形成される塗布膜に転写し、当該塗布膜に所定のパターンを形成するインプリントユニットと、
    複数の前記基板を保有可能で、前記インプリントユニットに対して前記基板を搬入出する基板搬入出ステーションと、を有する。     An imprint system comprising a template processing apparatus for forming a release agent on a template having a transfer pattern formed on a surface and forming a coating film on the release agent,
    The template processing apparatus includes:
    A processing station for performing predetermined processing on the template;
    A template loading / unloading station capable of holding a plurality of the templates and loading / unloading the template to / from the processing station;
    The processing station is
    A release agent film forming block for forming a release agent film on the surface of the template;
    A coating liquid supply section for supplying a coating liquid onto the film-forming release agent;
    A coating liquid filling part that pushes the coating liquid applied on the mold release agent into the depression of the transfer pattern of the template, and
    An imprint unit that transfers the transfer pattern to a coating film formed on a substrate using the template having a release agent formed on the surface thereof at the processing station, and forms a predetermined pattern on the coating film;
    A substrate loading / unloading station capable of holding a plurality of the substrates and loading / unloading the substrates to / from the imprint unit.
  12. 表面に転写パターンが形成されたテンプレート上に離型剤を成膜し、当該離型剤上に塗布膜を形成するテンプレート処理方法であって、
    前記テンプレートの表面に離型剤を成膜し、前記成膜された離型剤上に塗布液を塗布し、前記離型剤上に塗布された塗布液を前記テンプレートの転写パターンの窪み部に押し込む。     A template processing method of forming a release agent on a template having a transfer pattern formed on a surface, and forming a coating film on the release agent,
    A mold release agent is formed on the surface of the template, a coating liquid is applied onto the film-forming mold release agent, and the coating liquid applied on the mold release agent is applied to a recess portion of the template transfer pattern. Push in.
  13. 請求項１２に記載のテンプレート処理方法において、
    前記テンプレートの転写パターンの窪み部への前記塗布液の押し込みは、スキージを用いて行う。     The template processing method according to claim 12, wherein
    The squeegee is used to push the coating liquid into the depression of the template transfer pattern.
  14. 請求項１２に記載のテンプレート処理方法において、
    前記テンプレートの転写パターンの窪み部への前記塗布液の押し込みは、ローラを用いて行う。     The template processing method according to claim 12, wherein
    The application liquid is pushed into the recess of the template transfer pattern using a roller.
  15. 請求項１２に記載のテンプレート処理方法において、
    前記テンプレートの転写パターンの窪み部への前記塗布液の押し込みは、ブラシを用いて行う。     The template processing method according to claim 12, wherein
    The application liquid is pushed into the depression of the template transfer pattern using a brush.
  16. 表面に転写パターンが形成されたテンプレート上に離型剤を成膜し、当該離型剤上に塗布膜を形成するテンプレート処理方法をテンプレート処理装置によって実行させるために、当該テンプレート処理装置を制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、
    前記テンプレート処理方法は、
    前記テンプレートの表面に離型剤を成膜し、
    前記成膜された離型剤上に塗布液を塗布し、
    前記離型剤上に塗布された塗布液を前記テンプレートの転写パターンの窪み部に押し込む。
          The template processing apparatus is controlled to cause the template processing apparatus to execute a template processing method of forming a release agent on a template having a transfer pattern formed on the surface and forming a coating film on the release agent. A readable computer storage medium storing a program operating on a computer of a control unit,
    The template processing method is:
    Forming a release agent on the surface of the template,
    Applying a coating liquid on the film-forming release agent,
    The coating liquid applied on the mold release agent is pushed into the recess of the template transfer pattern.
PCT/JP2010/060462 2009-06-24 2010-06-21 Template processing device, imprint system, template processing method, and computer storage medium WO2010150740A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-149918 2009-06-24
JP2009149918 2009-06-24

Publications (1)

Publication Number Publication Date
WO2010150740A1 true WO2010150740A1 (en) 2010-12-29

Family

ID=43386509

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/060462 WO2010150740A1 (en) 2009-06-24 2010-06-21 Template processing device, imprint system, template processing method, and computer storage medium

Country Status (3)

Country Link
JP (1) JP2011025220A (en)
TW (1) TW201101371A (en)
WO (1) WO2010150740A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2434342A1 (en) * 2010-09-27 2012-03-28 FUJIFILM Corporation Method for producing curable composition for imprints
WO2020036173A1 (en) * 2018-08-14 2020-02-20 Ｓｃｉｖａｘ株式会社 Microstructure manufacturing method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5443103B2 (en) 2009-09-10 2014-03-19 株式会社東芝 Pattern formation method
JP6582511B2 (en) * 2015-04-15 2019-10-02 凸版印刷株式会社 Imprint mold, imprint method, pattern forming body

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027595A (en) * 1998-07-02 2000-02-22 Samsung Electronics Co., Ltd. Method of making optical replicas by stamping in photoresist and replicas formed thereby
US20040149683A1 (en) * 2002-12-27 2004-08-05 Lg.Philips Lcd Co., Ltd. Method for forming pattern using printing process
JP2005045168A (en) * 2003-07-25 2005-02-17 Tokyo Electron Ltd In-print method and in-print device
JP2005153091A (en) * 2003-11-27 2005-06-16 Hitachi Ltd Transfer method and transfer device
JP2007173806A (en) * 2005-12-21 2007-07-05 Asml Netherlands Bv Imprint lithography
JP2008546715A (en) * 2005-06-17 2008-12-25 ザ ユニバーシティ オブ ノース カロライナ アット チャペル ヒル Nanoparticle manufacturing method, system, and material
JP2009043998A (en) * 2007-08-09 2009-02-26 Canon Inc Imprinting method and imprinting device
JP2009208409A (en) * 2008-03-05 2009-09-17 Toyo Gosei Kogyo Kk Pattern forming method
JP2010076300A (en) * 2008-09-26 2010-04-08 Canon Inc Processing apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890355A (en) * 1972-03-03 1973-11-26
JP4420746B2 (en) * 2004-06-09 2010-02-24 リコー光学株式会社 Shape transfer mold, manufacturing method thereof, and manufacturing method of product using the same
JP2006269599A (en) * 2005-03-23 2006-10-05 Sony Corp Pattern forming method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board
JP2007168094A (en) * 2005-12-19 2007-07-05 Yasui Seiki:Kk Emboss-shaping apparatus

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027595A (en) * 1998-07-02 2000-02-22 Samsung Electronics Co., Ltd. Method of making optical replicas by stamping in photoresist and replicas formed thereby
US20040149683A1 (en) * 2002-12-27 2004-08-05 Lg.Philips Lcd Co., Ltd. Method for forming pattern using printing process
JP2005045168A (en) * 2003-07-25 2005-02-17 Tokyo Electron Ltd In-print method and in-print device
JP2005153091A (en) * 2003-11-27 2005-06-16 Hitachi Ltd Transfer method and transfer device
JP2008546715A (en) * 2005-06-17 2008-12-25 ザ ユニバーシティ オブ ノース カロライナ アット チャペル ヒル Nanoparticle manufacturing method, system, and material
JP2007173806A (en) * 2005-12-21 2007-07-05 Asml Netherlands Bv Imprint lithography
JP2009043998A (en) * 2007-08-09 2009-02-26 Canon Inc Imprinting method and imprinting device
JP2009208409A (en) * 2008-03-05 2009-09-17 Toyo Gosei Kogyo Kk Pattern forming method
JP2010076300A (en) * 2008-09-26 2010-04-08 Canon Inc Processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2434342A1 (en) * 2010-09-27 2012-03-28 FUJIFILM Corporation Method for producing curable composition for imprints
US8820541B2 (en) 2010-09-27 2014-09-02 Fujifilm Corporation Method for producing curable composition for imprints
WO2020036173A1 (en) * 2018-08-14 2020-02-20 Ｓｃｉｖａｘ株式会社 Microstructure manufacturing method

Also Published As

Publication number Publication date
JP2011025220A (en) 2011-02-10
TW201101371A (en) 2011-01-01

Similar Documents

Publication Publication Date Title
JP5443070B2 (en) Imprint system
WO2010150741A1 (en) Imprint system, imprinting method, and computer storage medium
JP5060517B2 (en) Imprint system
JP4451385B2 (en) Coating processing apparatus and coating processing method
WO2011145611A1 (en) Imprinting system, imprinting method, and computer storage medium
JP5411201B2 (en) IMPRINT SYSTEM, IMPRINT METHOD, PROGRAM, AND COMPUTER STORAGE MEDIUM
WO2011114926A1 (en) Template processing method, computer storage medium and template processing apparatus
JP2011104910A (en) Template processing method, program, computer storage medium, template processor, and imprinting system
WO2010150740A1 (en) Template processing device, imprint system, template processing method, and computer storage medium
JP5285515B2 (en) Template processing apparatus, imprint system, release agent processing method, program, and computer storage medium
JP2012227318A (en) Substrate processing method, program, computer storage medium, substrate processing apparatus and imprint system
JP5611112B2 (en) IMPRINT SYSTEM, IMPRINT METHOD, PROGRAM, AND COMPUTER STORAGE MEDIUM
JP5149244B2 (en) IMPRINT SYSTEM, IMPRINT METHOD, PROGRAM, AND COMPUTER STORAGE MEDIUM
JP5108834B2 (en) Template processing apparatus, imprint system, release agent processing method, program, and computer storage medium
JP5231366B2 (en) Template processing method, program, computer storage medium, template processing apparatus, and imprint system
JP5285514B2 (en) Template processing apparatus, imprint system, release agent processing method, program, and computer storage medium
WO2011040466A1 (en) Template processing device, imprint system, template processing method, and computer storage medium
JP5145397B2 (en) Template processing method, program, computer storage medium, and template processing apparatus
JP5355615B2 (en) Substrate processing method, program, computer storage medium, substrate processing apparatus, and imprint system
JP5282077B2 (en) Substrate surface modification method, program, computer storage medium, and substrate surface modification apparatus
JP5487064B2 (en) Template processing method, program, computer storage medium, template processing apparatus, and imprint system

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10792058

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10792058

Country of ref document: EP

Kind code of ref document: A1