JP2004179282A - Cleaning and coating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cleaning and coating apparatus which can prevent damages to a substrate to be treated due to vibration or warp, yet can efficiently process substrates to be processed continuously. <P>SOLUTION: The cleaning and coating apparatus comprises a plasma irradiation unit P1 for irradiating the front surface of a substrate G with a plasma to dry-clean the substrate G before cleaning it with a liquid, a plasma irradiation unit P2 for irradiating the front surface of the substrate with a hot plasma to dry the substrate G after washing it with the liquid, and a plasma irradiation unit P3 for irradiating the front surface of the substrate with a plasmas to convert the front surface of the dried substrate G hydrophobic. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a cleaning and coating apparatus, and more particularly to a cleaning and coating apparatus for cleaning a substrate to be processed such as a glass substrate for a flat panel display (FPD) before applying a resist and performing a resist coating process.
[0002]
[Prior art]
For example, in the manufacture of a flat panel display device (FPD), a predetermined film is formed on a glass substrate, which is a substrate to be processed, and then a photoresist solution is applied to form a resist film, and the resist film is formed. A circuit pattern is formed by a so-called photolithography technique in which the resist film is exposed and developed.
In this photolithography technology, the glass substrate, which is a substrate to be processed, is converted into a resist layer through a series of processes of cleaning treatment → dehydration baking → hydrophobic treatment → resist coating → pre-bake → exposure → development → post-bake as the main process. A predetermined circuit pattern is formed.
[0003]
[Problems to be solved by the invention]
By the way, in the above-described photolithography process, the process from the cleaning process in the first step to the resist coating process is performed by, for example, an apparatus having a configuration as shown in a plan view of FIG. 7 (hereinafter collectively referred to as a cleaning / coating apparatus). Has already been proposed by the present applicant (Japanese Patent Application No. 2002-57309).
As shown in FIG. 7, an excimer UV irradiation unit (e-UV) 61, a scrub cleaning unit (SCR) 62, a heat treatment unit (TB) 63, and a resist processing unit (CT, VD, ER) are provided along the transport line A. 64 are arranged, and each processing for the substrate to be processed is performed along the direction of the transport line A.
Further, the heat treatment device (TB) 63 includes a first heat treatment device (TB) 63a, a second heat treatment device (TB) 63b, and a transfer robot 63c. Although not shown, the two heat treatment apparatuses include a dehydration bake unit for dehydrating the substrate to be processed by heat treatment, a cooling unit for cooling the substrate to be processed, and an adhesion treatment (hydrophobic treatment) for improving the fixability of the resist. 2.) The units are configured in multiple stages in the vertical direction, and a plurality of respective units are provided in order to efficiently process a plurality of substrates to be processed.
The transfer robot 63c is configured to move in the horizontal and vertical directions, and to carry in and out the substrate to be processed into and out of each unit.
[0004]
In the configuration of such a cleaning / coating apparatus, first, a substrate to be processed (hereinafter, referred to as a substrate F) is directly carried into an excimer UV irradiation unit (e-UV) 61 to perform dry cleaning. This dry cleaning removes organic substances on the substrate F using an excimer UV lamp that emits quasi-single wavelength UV light.
Next, the substrate F is carried into a scrub cleaning unit (SCR) 62 arranged below the excimer UV irradiation unit (e-UV) 61 and scrub-cleaned by a transfer device (not shown). After the scrub cleaning, the substrate F is transferred to the heat treatment device 63 by, for example, roller conveyance.
In the heat treatment apparatus (TB) 63, the substrate F is processed in the order of dehydration bake processing → cooling processing → adhesion processing (hydrophobizing processing) → cooling processing. 63c.
[0005]
When the processing in the heat treatment apparatus (TB) 63 is completed, the substrate F is transferred to a resist processing unit (CT / VD / ER) 64. Then, the substrate F is first transported to a resist coating process (CT) 64a therein, where a resist solution is applied to the substrate F, and then transported to a vacuum drying process (VD) 64b to be dried under reduced pressure. The wafer is conveyed to a resist removing device (ER) 64c to remove excess resist on the periphery of the substrate F. Thereafter, the substrate F is carried out of the resist processing unit 64.
[0006]
In recent years, substrates to be processed such as a glass substrate for a flat panel display (FPD) and a semiconductor wafer substrate have become larger, and handling of a large-sized substrate has become more and more careful. In particular, glass substrates for flat panel displays (FPDs) have become larger.
In an apparatus having a multi-stage processing unit as described above, when the large-sized substrate to be processed is moved by a transfer robot, mechanical vibration or shaking, or the substrate to be processed is moved by a robot arm. The substrate to be processed is likely to be damaged due to the warpage due to the support (warpage due to its own weight), and the yield may be reduced.
[0007]
In addition, the movement of the substrate to be processed in the vertical direction by the transfer robot needs to be slowed down in order to reduce vibration and shaking, and requires a longer transfer time than a flat flow method such as roller transfer. Therefore, there is a problem that the throughput is reduced.
Further, as the size of the glass substrate increases, the size of the entire device increases, and a space for the device is required.
In particular, in order to suppress the footprint, when the units are stacked, the height of the apparatus increases, and the moving distance of the substrate to be processed in the vertical direction increases. As a result, the above-described transfer time is further increased, the throughput is further reduced, the risk of damage to the substrate to be processed is increased, and the yield is further reduced. Thus, they are in a trade-off relationship.
[0008]
The present inventors have variously studied to minimize the vertical movement of the substrate to be processed while suppressing the footprint as a cleaning / coating processing apparatus for processing the substrate to be processed which is increasing in size.
As a result, the present inventors can shorten the treatment time by performing the hydrophobic treatment that has been performed after the scrub cleaning by plasma irradiation, and thus it is necessary to stack a plurality of hydrophobic treatment units. The present invention has been completed with the aim of reducing the number.
[0009]
In addition, the present inventors require periodic lamp maintenance in order to remove organic substances on a substrate using an excimer UV lamp as described above. That is, when the UV lamp including the excimer is used for about 1500 hours, the illuminance is reduced to a required value or less, so that the lamp needs to be periodically replaced.
Therefore, in the present situation where the size of the substrate to be processed is increasing, the size of the lamp is also increasing and its management and replacement are becoming difficult. The present inventors have conceived that the problem can be solved by performing plasma irradiation on such a problem, and have completed the present invention.
[0010]
The present invention has been made under the circumstances described above, and a cleaning / coating process capable of avoiding damage to a substrate to be processed due to vibration or warpage and capable of continuously and efficiently processing the substrate to be processed. It is intended to provide a device.
[0011]
[Means for Solving the Problems]
In order to solve the above problems, in the cleaning / coating apparatus according to the present invention, a substrate to be processed is cleaned, and a resist liquid is applied to the cleaned substrate to be processed. In the coating treatment apparatus, a first plasma irradiation means for irradiating the substrate surface with plasma to dry-clean the substrate, and a hydrophobizing treatment on the substrate surface after the dry cleaning, And a second plasma irradiation means for irradiating the substrate surface with plasma.
[0012]
As described above, since the substrate surface is irradiated with plasma by the first plasma irradiation unit and dry cleaning is performed, it is possible to solve a problem of maintenance management such as replacement of a large lamp, such as when an excimer UV lamp is used. it can. Moreover, in the case of a cleaning unit using an excimer UV lamp, the size of the lamp itself must be equal to or larger than the substrate to be processed. On the other hand, the size of the first plasma irradiation means is smaller than the size of the substrate to be processed, and the size of the cleaning unit can be reduced.
Further, by irradiating the substrate surface with the plasma by the second plasma irradiating means, the hydrophobic treatment can be continuously performed, and the throughput efficiency can be improved. In addition, since the hydrophobic treatment can be performed efficiently, there is no need to stack units in multiple stages, and there is no need for a transport robot that can move vertically. Therefore, the cost of the apparatus can be reduced, and the damage of the large-sized substrate due to vibration or warpage can be prevented.
[0013]
Here, there is provided a liquid cleaning unit for cleaning the substrate to be processed which has been dry-cleaned by the first plasma irradiation unit, and plasma is applied to the substrate to be processed cleaned by the liquid cleaning unit by the second plasma irradiation unit. Irradiation is desirable.
As described above, in order to completely clean the substrate to be processed, liquid cleaning may be performed after dry cleaning.
[0014]
Further, in order to perform a drying process on the substrate to be processed after the liquid cleaning process, a third plasma irradiating unit that irradiates the substrate surface with plasma is provided. It is desirable that the surface of the substrate to be processed is subjected to a hydrophobic treatment by the second plasma irradiation means.
As described above, by performing drying of the substrate to be processed after the liquid cleaning by the third plasma irradiation unit, the same effect as in the case of the first plasma irradiation unit can be obtained.
[0015]
Further, it is desirable that the reactive gas used for the first plasma irradiating means and the reactive gas used for the second plasma irradiating means are different, and the reactive gas used for the first plasma irradiating means and the third plasma irradiating means is different. Are preferably the same.
Specifically, the reactive gas used for the first plasma irradiation means and the third plasma irradiation means is oxygen gas, and the reactive gas used for the second plasma irradiation means is a fluorine-based gas. is there.
[0016]
With this configuration, organic substances on the substrate can be chemically decomposed and removed by the oxygen plasma by the first plasma irradiation means. The third plasma irradiating means can irradiate the substrate surface with thermal plasma generated at atmospheric pressure to heat the substrate surface and evaporate and dry the moisture on the substrate. Further, the substrate surface can be modified to be hydrophobic by irradiating the substrate surface with fluorine plasma by the second plasma irradiating means.
[0017]
In addition, the first plasma irradiation unit specifically includes a first gas supply unit that supplies a reactive gas and a first electron irradiation unit that irradiates an electron beam. It is preferable that oxygen plasma is generated by irradiating the reactive gas supplied by the first gas supply unit with an electron beam from the first electron irradiation unit, and the surface of the substrate to be processed is irradiated with oxygen plasma. .
Similarly, the second plasma irradiation means includes a second gas supply unit for supplying a reactive gas, and a second electron irradiation unit for irradiating an electron beam. It is preferable that a fluorine gas is generated by irradiating the reactive gas supplied by the supply unit with a beam from the second electron irradiation unit, and the surface of the substrate to be processed is irradiated with the fluorine plasma.
Similarly, the third plasma irradiation means includes a third gas supply unit for supplying a reactive gas, and a third electron irradiation unit for irradiating an electron beam. Preferably, the reactive gas supplied by the gas supply unit is irradiated with an electron beam from the third electron irradiation unit.
[0018]
The apparatus further includes a transport unit that holds the substrate to be processed in a substantially horizontal state and transports the substrate, and generates plasma generated on a surface of the substrate to be processed held in a substantially horizontal state by the transport unit. It is desirable to irradiate.
With this configuration, unlike the case of using a vertically movable transfer robot, there is no possibility of damage due to vibration or warpage, and the substrate can be flowed substantially horizontally in a consistent manner. Throughput efficiency can be improved.
[0019]
Further, it is preferable that the third plasma irradiation means and the second plasma irradiation means are provided in the same unit.
By providing the substrate drying process and the hydrophobizing process in the unit and performing the processes sequentially, the footprint can be reduced, the apparatus cost can be reduced, and the throughput can be improved.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a cleaning / coating apparatus according to the present invention will be described based on an embodiment shown in the drawings. FIG. 1 is a plan view showing the overall configuration of a glass substrate resist coating and developing apparatus provided with a cleaning / coating apparatus according to an embodiment of the present invention.
[0021]
The resist coating and developing apparatus 100 includes a cassette station (loading / unloading section) 1 on which a cassette C containing a plurality of glass substrates G is placed, and a plurality of substrates for performing a series of processing including resist coating and development on the substrate G. And an interface station (interface unit) 3 for transferring the substrate G to and from the exposure apparatus 4. The processing station 2 is provided at both ends of the processing station 2. A cassette station 1 and an interface station 3 are arranged.
In FIG. 1, the longitudinal direction of the resist coating and developing apparatus 100 is defined as an X direction, and the direction orthogonal to the X direction on a plane is defined as a Y direction.
[0022]
The cassette station 1 includes a transfer device 11 for transferring a substrate G between the cassette C and the processing station 2. The cassette station 1 transfers the cassette C to and from the outside. The transfer device 11 has a transfer arm 11a, and can move on a transfer path 12 provided along the Y direction which is the arrangement direction of the cassettes C. The transfer arm 11a allows the transfer between the cassette C and the processing station 2 to be performed. The loading and unloading of the substrate G is performed between them.
[0023]
The processing station 2 basically has two parallel rows of transport lines A and B for transporting the substrate G extending in the X direction, and extends from the cassette station 1 side to the interface station 3 along the transport line A. In addition, a cleaning / coating device 10 including a cleaning unit 20 and a coating unit 21 and a heat treatment unit 22 are arranged.
Further, a developing unit 23, an i-ray UV irradiation unit (I-UV) 24, and a heat treatment unit 25 are arranged from the interface station 3 side to the cassette station 1 along the transport line B.
[0024]
In the resist coating / developing apparatus 100 configured as described above, first, the substrate G of the cassette C disposed in the cassette station 1 is carried into the cleaning section 20 of the processing station 2, where it is subjected to dry cleaning, scrub cleaning, and drying. The processing and the hydrophobization processing are sequentially performed.
When a series of processing in the cleaning unit 20 is completed, the substrate G is carried out of the cleaning unit 20 and carried into the coating unit 21.
In the application section 21, the substrate G is coated with a resist solution and dried under reduced pressure, and then the excess resist on the periphery of the substrate G is removed. Thereafter, the substrate G is carried out of the coating unit 21.
[0025]
Thus, the coating process is completed, and the substrate G carried out of the coating unit 21 is carried into the heat treatment unit 22.
Next, the substrate G is subjected to a series of processes for pre-baking in the heat treatment unit 22, and then is carried out of the heat treatment device 22 and transported to the interface station 3.
In the interface station 3, after the substrate G is exposed to remove the peripheral resist, the substrate G is transferred to the exposure device 4 by the transfer device 55, where the resist film is exposed on the substrate G to form a predetermined pattern. Is done.
[0026]
After the exposure is completed, the substrate G is carried into the titler (not shown) by the carrying mechanism 55 of the interface station 3, and after predetermined information is written on the substrate G, the substrate G is again carried into the developing unit 23 of the processing station 2.
In the developing process in the developing unit 23, a developing solution is applied to the substrate G, the developing solution is removed after the development, and a drying process is performed.
[0027]
After the development processing, the substrate G is transported to the i-ray UV irradiation unit (I-UV) 24, and the substrate G is subjected to a decolorizing process. After that, the substrate G is carried into the heat treatment unit 25.
The substrate G is subjected to a series of post-baking processes in the heat treatment unit 25, and then is unloaded from the heat treatment unit 25 and delivered to the transfer device 11 of the cassette station 1.
Next, the substrate G is accommodated in the predetermined cassette C arranged in the cassette station 1 by the transfer device 11, and a series of processes in the resist coating and developing apparatus 100 is completed.
[0028]
The present invention has a feature in the cleaning / coating apparatus 10 in the resist coating / developing processing apparatus 100 having such an operation and configuration, and will be described in detail below. The configuration of the cleaning / coating apparatus 10 is shown in a plan view of FIG.
As shown in FIG. 2, the cleaning unit 20 includes a plasma cleaning unit (P-HL) 30, a scrub cleaning unit (SCR) 31, an air drying unit (AK) 32, and a plasma drying unit (P) along the transport line A. -D) 33, a plasma hydrophobizing unit (P-HB) 34, and a cooling unit (COL) 35 are arranged in this order.
The coating section 21 includes a resist coating processing apparatus (CT) 21a, a reduced-pressure drying processing apparatus (VD) 21b, and a peripheral resist removing apparatus (ER) 21c arranged along the transport line A.
[0029]
In such an arrangement, when the substrate G of the cassette C disposed in the cassette station 1 is carried into the cleaning section 20, first, dry cleaning is performed in the plasma cleaning unit (P-HL) 30.
FIG. 3 shows a side view of the plasma cleaning unit (P-HL) 30. Reference numeral 43 denotes a transport unit, which transports the substrate G along the transport line A by roller transport. In addition, in the figure, the transport unit 43 is configured to perform roller transport, but this may be belt transport.
[0030]
A plasma irradiation unit P1 as first plasma irradiation means is installed on the ceiling 44. The plasma irradiation unit P1 includes an electron beam tube 41 and a reactive gas supply unit.
The electron irradiation section 41a of the electron beam tube 41 is installed downward, and the reactive gas supply section 42 is installed so that a reactive gas is supplied near the electron irradiation section 41a. The reaction gas is supplied at atmospheric pressure.
[0031]
During the processing on the substrate G, the driving of the transfer unit 43 is stopped, and the plasma irradiation unit P1 is moved in the X direction shown in FIG. While reciprocating in the Y direction.
The operation control of the transport unit 43 and the plasma irradiation unit P1 is performed by the controller 40.
[0032]
In the plasma cleaning unit (P-HL) 30 having such a configuration, the substrate G is transported on the transport unit 43 from the upstream of the transport line A (left side in FIG. 3), and the substrate G is positioned below the electron irradiation unit 41a. The operation of the transport unit 43 is controlled so as to be stationary.
Here, a high-concentration oxygen gas is supplied from the reactive gas supply unit 42 to the vicinity of the electron irradiation unit 41a, and oxygen is ionized by the electrons irradiated from the electron irradiation unit 41a of the plasma irradiation unit P1 to generate oxygen plasma. Thus, the light is irradiated directly below the electron irradiation unit 41a.
[0033]
Then, the plasma irradiation unit P1 is moved in the X direction shown in FIG. 1 by a moving mechanism (not shown) so that the oxygen plasma is irradiated on the entire surface of the substrate G in a state where the oxygen plasma is irradiated directly below the electron irradiation section 41a. By reciprocating in the Y direction while moving, the entire surface of the substrate G is irradiated with oxygen plasma.
As described above, by irradiating the entire surface of the substrate G with oxygen plasma, organic substances such as carbonized resin and oils and fats attached to the surface of the substrate G are chemically decomposed and removed by the irradiated oxygen plasma, and Then, the surface of the substrate G is modified to be hydrophilic.
[0034]
It should be noted that the UV lamp containing the excimer will reduce the illuminance below the required value when it is used for about 1500 hours. Therefore, periodic replacement or maintenance of the lamp is required. However, plasma irradiation using such an electron beam tube is required. Since the unit P1 does not require any particular maintenance and can be realized by a small device, the problem of maintenance management of a large lamp such as an excimer UV lamp can be solved. Further, since the size of the cleaning unit can be reduced, the footprint can be prevented from increasing.
[0035]
The substrate G, which has been dry-cleaned by the plasma cleaning unit (P-HL) 30 and whose surface has been modified to be hydrophilic, is carried into the scrub cleaning unit (SCR) 31 by the transport unit 43. Here, the substrate G is subjected to scrub cleaning with pure water while the substrate G is kept substantially horizontal.
[0036]
The scrub-cleaned substrate G is sequentially subjected to a drying process and a hydrophobizing process before applying the resist solution. FIG. 4 shows a side view of the air drying unit (AK) 32, the plasma drying unit (PD) 33, and the plasma hydrophobizing unit (P-HB).
In an air drying unit (AK) 32 shown in FIG. 4, an air knife 45 is provided on a ceiling portion 44 so that moisture on the substrate is removed by wind pressure of air blown downward from a blower 45a. It is configured. Note that the blowing control is performed by the controller 40.
[0037]
In the plasma drying unit (PD) 33 of FIG. 4, a plasma irradiation unit P2 as a third plasma irradiation unit is installed on the ceiling 44. The plasma irradiation unit P2 includes an electron beam tube 46 and a reactive gas supply unit 47. The electron irradiation section 46a of the electron beam tube 46 is installed downward, and the reactive gas supply section 47 is installed so as to supply a reactive gas near the electron irradiation section 46a. The reaction gas is supplied at atmospheric pressure.
Further, during the processing on the substrate G, the driving of the transfer unit 43 is stopped, and the plasma irradiation unit P2 is moved in the X direction shown in FIG. While reciprocating in the Y direction.
The operation control of the transport unit 43 and the plasma irradiation unit P2 is performed by the controller 40.
[0038]
Further, the plasma hydrophobizing unit (P-HB) 34 in FIG. 4 is provided with shutter mechanisms 57 and 58 to shut off the front and rear processing units. When shut off by the shutter mechanisms 57 and 58, the inside of the plasma hydrophobizing unit (P-HB) 34 is a space sealed by four wall surfaces.
In addition, a plasma irradiation unit P3, which is a second plasma irradiation unit, is installed on the ceiling 44. The plasma irradiation unit P3 includes an electron beam tube 48, a reactive gas supply unit 49, and a gas suction unit 50 for sucking the atmosphere after the processing. The electron irradiation section 48a of the electron beam tube 48 is installed downward, and a reactive gas supply section 49 is installed near the electron irradiation section 48a so that a reactive gas is supplied. Note that the reactive gas is supplied at atmospheric pressure.
[0039]
Further, during the processing on the substrate G, the driving of the transport unit 43 is stopped, and the plasma irradiation unit P3 is moved in the X direction shown in FIG. While reciprocating in the Y direction.
The operation of the transport unit 43 and the plasma irradiation unit P3 is controlled by the controller 40.
[0040]
In the configuration shown in FIG. 4, first, the substrate G carried out from the scrub cleaning unit (SCR) 31 by the transport unit 43 is subjected to air pressure drying of the surface moisture after scrub cleaning by the air drying unit (AK) 32.
Then, thermal plasma is irradiated in the plasma drying unit (PD) 33, and a drying process is performed on moisture remaining on the substrate G after the drying process in the air drying unit (AK) 32. That is, after the drying process in the air drying unit (AK) 32, the transport unit 43 transports the substrate G from the upstream of the transport line A (left side in the drawing) by the transport unit 43 and stops at the position below the electron irradiation unit 46a. Operation is controlled.
[0041]
Here, a high-concentration oxygen gas is supplied to the vicinity of the electron irradiation unit 46a from the reactive gas supply unit 47, and oxygen in the atmosphere is ionized by electrons irradiated from the electron irradiation unit 46a of the plasma irradiation unit P2, so that thermal plasma is generated. It is generated and irradiated just below the electron irradiation unit 46a.
Then, the plasma irradiation unit P2 is moved in the X direction shown in FIG. 1 by a moving mechanism (not shown) so that the thermal plasma is irradiated on the entire surface of the substrate G in a state where the thermal plasma is irradiated directly below the electron irradiation section 46a. Reciprocating in the Y direction while moving, irradiates the surface of the substrate G with thermal plasma.
By thus irradiating the entire surface of the substrate G with the thermal plasma, the surface of the substrate G is heated, and the moisture on the substrate G is completely evaporated and dried.
[0042]
Next, after the drying process by the plasma drying unit (PD) 33, the substrate G is carried into the plasma hydrophobizing unit (P-HB) 34 in a state where the shutter 57a of the shutter mechanism 57 is opened, and the control of the controller 40 is performed. As a result, the shutters 57a and 58a are closed. Here, the inside of the plasma hydrophobizing unit (P-HB) 34 is closed by closing the shutters 57a and 58a in order to prevent a fluorine-based gas and a plasma atmosphere after ionization described below from leaking to the outside. It is.
[0043]
In the plasma hydrophobizing unit (P-HB) 34, the transfer unit 43 transfers the substrate G on the transfer unit 43 from upstream of the transfer line A (left side in the figure) and stops at a position below the electron irradiation unit 48a. 43 is controlled.
Here, the fluorine-based gas is supplied from the reactive gas supply unit 49 to the vicinity of the electron irradiation unit 48a, and the fluorine-based gas is ionized by the electrons irradiated from the electron irradiation unit 48a of the plasma irradiation unit P3 to generate fluorine plasma. Irradiation is performed immediately below the electron irradiation unit 48a.
Then, the plasma irradiation unit P3 is moved in the X direction shown in FIG. 1 by a moving mechanism (not shown) so that the fluorine plasma is irradiated on the entire surface of the substrate G while the fluorine plasma is irradiated directly below the electron irradiation section 48a. Reciprocating in the Y direction while moving, irradiates the surface of the substrate G with fluorine plasma.
By irradiating the entire surface of the substrate G with the fluorine plasma, the surface of the substrate G is modified to be hydrophobic.
[0044]
After the hydrophobization process is completed, the atmosphere in the plasma hydrophobization unit (P-HB) 34 is suctioned by the gas suction unit 50.
After the hydrophobization process in the plasma hydrophobization unit (P-HB) 34 is completed, the shutters 57 a and 58 a are opened under the control of the controller 40, and the substrate G is carried out by the carrier 43.
[0045]
The substrate G subjected to the hydrophobic treatment is cooled in a cooling unit (COL) 35 shown in FIG.
In the coating unit 21, first, spin coating of a resist solution is performed by a resist coating processing device (CT) 21a, and then decompression processing is performed by a reduced-pressure drying processing device (VD) 21b. Excess resist is removed.
[0046]
As described above, in the embodiment according to the present invention, various processes are performed by the cleaning unit 20 continuously and so-called flat flow cleaning of the substrate G placed substantially horizontally on the transport unit 43. be able to. That is, since the processing is performed without performing the vertical movement by the transfer robot, vibration and warpage of the substrate are suppressed, accidents such as breakage of the substrate to be processed are reduced, and the yield can be improved.
Further, since a space for installing the transfer robot is not required, and each unit can be downsized, the footprint can be further reduced, and the manufacturing cost of the apparatus can be reduced.
[0047]
Further, the time for transferring the substrate by the transfer robot can be saved, so that the throughput efficiency can be improved.
In addition, since the plasma cleaning unit (P-HL) 30 does not use an excimer UV lamp, the problem of maintenance can be solved.
In addition, by generating plasma at atmospheric pressure, a vacuum device or the like is not required, which leads to a reduction in size of the device, a reduction in cost, and a reduction in footprint.
[0048]
In the above embodiment, the plasma drying unit (PD) 33 and the plasma hydrophobizing unit (P-HB) 34 are separate devices, but these are provided in the same unit (device) to perform the processing. You may do so.
FIG. 5 is a plan view of the cleaning / coating apparatus 10 in this case. 2 is a part of a plasma drying unit (PD) 33 and a plasma hydrophobizing unit (P-HB) 34 in FIG. 2, and in FIG. (PD / HB) have the same function as them.
[0049]
FIG. 6 shows a side view of the plasma drying / hydrophobic treatment unit (PD / HB) 52.
The plasma drying / hydrophobic processing unit (PD / HB) 52 is provided with shutter mechanisms 57 and 58 for shutting off the front and rear processing units. Then, in a state of being shut off by the shutter mechanisms 57 and 58, the inside of the plasma drying / hydrophobic treatment unit (PD / HB) 52 is a space sealed by four wall surfaces.
In addition, a plasma irradiation unit P4 is installed on the ceiling 44. The plasma irradiation unit P4 includes an electron beam tube 53, a reactive gas supply unit 54, and a gas suction unit 55 for sucking the atmosphere after the processing.
The electron irradiation section 53a of the electron beam tube 53 is installed downward, and the reactive gas supply section 54 is installed to supply a reactive gas near the electron irradiation section 53a.
[0050]
Further, during the processing on the substrate G, the driving of the transfer unit 43 is stopped, and the plasma irradiation unit P4 is moved in the X direction shown in FIG. While reciprocating in the Y direction.
The operation control of the transport unit 43 and the plasma irradiation unit P4 is performed by the controller 40.
[0051]
In the configuration shown in FIG. 6, the substrate G after scrub cleaning is carried in while being held substantially horizontally by the transport unit 43, and is air blow dried by the air drying unit (AK) 32.
Next, in a state where the shutter 57a of the shutter mechanism 57 is opened, the substrate G is moved from the upstream (left side in the drawing) of the transfer line A to the inside of the plasma drying / hydrophobic processing unit (PD / HB) 52 on the transfer section 43. The operation of the transport unit 43 is controlled so that the transport unit 43 is stopped at a position below the electron irradiation unit 53a.
Here, a high-concentration oxygen gas is supplied from the reactive gas supply unit 54 to the vicinity of the electron irradiation unit 53a, and oxygen is ionized by electrons irradiated from the electron irradiation unit 53a of the plasma irradiation unit P4 to generate thermal plasma. Thus, the light is irradiated directly below the electron irradiation unit 53a.
[0052]
As described above, the plasma irradiation unit P4 is moved by the moving mechanism (not shown) by the moving mechanism (not shown) so that the entire surface of the substrate G is irradiated with the thermal plasma in a state where the thermal plasma is irradiated directly below the electron irradiation unit 53a. The substrate is reciprocated in the Y direction while moving in the direction, and the surface of the substrate G is irradiated with thermal plasma.
Then, by irradiating the entire surface of the substrate G with thermal plasma, the surface of the substrate G is heated, and the moisture remaining on the substrate G after the drying process in the air drying unit (AK) 32 is completely evaporated. Dried.
[0053]
Next, the shutters 57a and 58a are closed under the control of the controller 40, and the inside of the plasma drying / hydrophobic processing unit (PD / HB) 52 is sealed. Then, a gas supply path (not shown) is switched to supply a fluorine-based gas to the reactive gas supply unit 54.
This fluorine-based gas is supplied to the vicinity of the electron irradiation unit 53a, and the fluorine-based gas is ionized by the electrons irradiated from the electron irradiation unit 53a of the plasma irradiation unit P4, and fluorine plasma is generated, which is irradiated immediately below the electron irradiation unit 53a. Is done.
Then, the plasma irradiation unit P4 is moved in the X direction shown in FIG. 1 by a moving mechanism (not shown) so that the fluorine plasma is irradiated on the entire surface of the substrate G in a state where the fluorine plasma is irradiated directly below the electron irradiation unit 53a. Reciprocating in the Y direction while moving, irradiates the surface of the substrate G with fluorine plasma.
By irradiating the entire surface of the substrate G with the fluorine plasma, the surface of the substrate G is modified to be hydrophobic.
[0054]
After completion of the hydrophobic treatment, the atmosphere in the plasma drying / hydrophobic treatment unit (PD / HB) 52 is sucked by the gas suction unit 55.
After the drying and hydrophobizing processing in the plasma drying / hydrophobicizing unit (PD / HB) 52 is completed, the shutters 57 a and 58 a are opened under the control of the controller 40, and the substrate G is carried out by the transport section 43.
[0055]
As described above, since the drying process and the hydrophobizing process after the scrub cleaning can be performed in the same unit (apparatus), the footprint can be further reduced, and the apparatus cost can be further reduced.
[0056]
In the above embodiment, a glass substrate has been described as an example of a substrate to be processed. However, the present invention is not limited to this. For example, a substrate to be subjected to heat treatment such as a semiconductor wafer may be used. Also, the present invention can be applied.
Further, in the plasma drying unit (PD) 33 and the plasma drying / hydrophobic treatment unit (PD / HB) 52, the reactive gas for generating thermal plasma for the substrate drying treatment was oxygen gas. However, the present invention is not limited to this as long as thermal plasma can be generated.
[0057]
Furthermore, although one electron beam tube is used in each of the plasma irradiation units P1 to P4, a plurality of electron beam tubes may be installed according to each processing.
Furthermore, in the above embodiment, the case where the substrate to be processed is stopped and the plasma irradiation unit irradiates the plasma while reciprocating in the Y direction while moving in the X direction, May be moved in the X direction, and the plasma irradiation unit may be reciprocated only in the Y direction to perform plasma irradiation.
Further, by forming the plasma irradiation units P1 to P4 to be longer than the width in the Y direction of the substrate to be processed, which is orthogonal to the direction of movement of the substrate by the transfer unit 43, the plasma irradiation units can be prevented from reciprocating in the Y direction. Alternatively, the plasma irradiation may be performed by moving the substrate in the X direction by the transport unit 43.
[0058]
【The invention's effect】
As is apparent from the above description, according to the cleaning / coating apparatus of the present invention, the substrate to be processed is prevented from being damaged by vibration or warpage, and furthermore, the cleaning / coating processing that continuously and efficiently processes the substrate to be processed. An apparatus can be provided.
[Brief description of the drawings]
FIG. 1 is a schematic plan view showing the overall configuration of a glass substrate resist coating and developing apparatus including a cleaning / coating apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic plan view showing a configuration of a cleaning / coating apparatus according to the embodiment of the present invention.
FIG. 3 is a schematic side view of a plasma cleaning unit (P-HL) according to the embodiment of the present invention.
FIG. 4 is a schematic side view of an air drying unit (AK), a plasma drying unit (PD), and a plasma hydrophobizing unit (P-HB) according to the embodiment of the present invention.
FIG. 5 is a schematic plan view of a cleaning / coating apparatus according to another embodiment of the present invention.
FIG. 6 is a schematic side view of a plasma drying / hydrophobic treatment unit (PD / HB) according to another embodiment of the present invention.
FIG. 7 is a schematic plan view showing a configuration of a conventional cleaning / coating apparatus.
[Explanation of symbols]
1 cassette station
2 Processing station
3 Interface station
4 Exposure equipment
10 Cleaning and coating equipment
11 Transport device
11a Transfer arm
20 Cleaning unit
21 Coating part
22 Heat treatment section
23 Developing section
24 i-ray UV irradiation unit
25 Heat treatment section
30 Plasma cleaning unit
31 Scrub cleaning unit
32 air drying unit
33 Plasma drying unit
34 Plasma Hydrophobic Treatment Unit
35 Cooling unit
40 Controller
41 electron beam tube
41a electron irradiation unit
42 Gas supply unit
43 Transport unit
44 Ceiling
45 air knife
46 Electron beam tube
46a electron irradiation unit
47 Gas supply unit
48 electron beam tube
48a electron irradiation unit
49 Gas supply unit
50 Gas suction unit
52 Plasma drying / hydrophobic treatment unit
53 electron beam tube
54 Gas supply unit
55 Gas suction unit
57 Shutter mechanism
100 Resist coating and developing equipment
C cassette
G board
P1 Plasma irradiation unit
P2 plasma irradiation unit
P3 Plasma irradiation unit
P4 Plasma irradiation unit

Claims (12)

In a cleaning / coating processing apparatus for cleaning and applying a resist liquid to the cleaned substrate to be cleaned, and applying a resist liquid to the cleaned substrate to be processed,
First plasma irradiation means for irradiating the substrate surface with plasma to dry-clean the substrate to be processed;
A cleaning / coating processing apparatus comprising at least a second plasma irradiating means for irradiating the substrate surface with plasma in order to hydrophobize the substrate surface after the dry cleaning. Liquid cleaning means for cleaning the substrate to be processed which has been dry-cleaned by the first plasma irradiation means;
2. The cleaning / coating processing apparatus according to claim 1, wherein the substrate to be processed cleaned by the liquid cleaning unit is irradiated with plasma by the second plasma irradiation unit. In order to dry the substrate to be processed after the liquid cleaning process, a third plasma irradiating means for irradiating plasma to the substrate surface is provided,
3. The cleaning / coating processing apparatus according to claim 2, wherein after the drying processing by the third plasma irradiation means, the surface of the substrate to be processed is subjected to a hydrophobic treatment by the second plasma irradiation means. 4. The cleaning / coating apparatus according to claim 1, wherein a reactive gas used for said first plasma irradiating means and a reactive gas used for said second plasma irradiating means are different from each other. The reactive gas used for the first plasma irradiating means and the third plasma irradiating means is the same, and the reactive gas used for the first plasma irradiating means and the second plasma irradiating means is different. The cleaning / coating processing apparatus according to claim 3, wherein: The reactive gas used for the first plasma irradiation means is an oxygen gas, and the reactive gas used for the second plasma irradiation means is a fluorine-based gas. Cleaning and coating equipment. The reactive gas used for the first plasma irradiation means and the third plasma irradiation means is oxygen gas, and the reactive gas used for the second plasma irradiation means is a fluorine-based gas. The cleaning / coating processing apparatus according to claim 5. A first gas supply unit configured to supply a reactive gas;
A first electron irradiation unit for irradiating an electron beam,
At atmospheric pressure, an oxygen plasma is generated by irradiating the reactive gas supplied by the first gas supply unit with an electron beam from the first electron irradiation unit, and oxygen plasma is generated on the surface of the substrate to be processed. The cleaning / coating apparatus according to claim 1, wherein the irradiation is performed. A second gas supply unit configured to supply a reactive gas;
A second electron irradiation unit for irradiating an electron beam,
A fluorine gas is generated by irradiating the reactive gas supplied by the second gas supply unit with a beam from the second electron irradiation unit at atmospheric pressure, and the surface of the substrate to be processed is irradiated with the fluorine plasma. The cleaning / coating apparatus according to any one of claims 1 to 7, wherein: A third gas supply unit configured to supply a reactive gas;
A third electron irradiation unit that irradiates an electron beam,
Irradiating the reactive gas supplied by the third gas supply unit with an electron beam from the third electron irradiation unit at atmospheric pressure to generate thermal plasma, and irradiating the surface of the substrate with thermal plasma with the thermal plasma The cleaning / coating processing apparatus according to any one of claims 3, 5, and 7, wherein Along with holding the substrate to be processed in a substantially horizontal state, a transport unit that transports the substrate is provided,
The cleaning / coating according to any one of claims 1 to 10, wherein the generated plasma is applied to a surface of the substrate to be processed, which is held in a substantially horizontal state by the transfer means. Processing equipment. The said 3rd plasma irradiation means and the said 2nd plasma irradiation means are provided in the same unit, The claim 3, Claim 5, Claim 7, Claim 10, Claim 10, Claim 10 characterized by the above-mentioned. A cleaning / coating apparatus according to any one of the above 11

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