TW201912817A - Mask plate and film forming method - Google Patents
Mask plate and film forming method Download PDFInfo
- Publication number
- TW201912817A TW201912817A TW107118376A TW107118376A TW201912817A TW 201912817 A TW201912817 A TW 201912817A TW 107118376 A TW107118376 A TW 107118376A TW 107118376 A TW107118376 A TW 107118376A TW 201912817 A TW201912817 A TW 201912817A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- plate
- mask
- pattern
- masking
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000010408 film Substances 0.000 claims abstract description 36
- 230000035699 permeability Effects 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 230000000149 penetrating effect Effects 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 230000000873 masking effect Effects 0.000 claims description 35
- 239000000696 magnetic material Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims 1
- 230000004907 flux Effects 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
本發明，係有關於具備有使貫通板厚方向之複數之透孔以特定之圖案而被作開設所成之圖案遮罩部和位置於圖案遮罩部之周圍之遮蔽部並且對於基板之其中一面而被作密著或者是近接配置而規定對於基板之處理範圍的遮罩板、和利用有此遮罩板之成膜方法。The present invention relates to a patterned masking portion provided with a plurality of through-holes penetrating in the thickness direction of the plate in a specific pattern, and a masking portion positioned around the patterned masking portion. A mask plate which is disposed in close contact or in close proximity to define a processing range for the substrate, and a film forming method using the mask plate.
例如，作為製造有機EL元件之工程的其中一者，係周知有藉由真空蒸鍍法來成膜特定之薄膜。於此情況，係在能夠形成真空氛圍之真空腔內，將玻璃或聚醯亞胺等之基板，和具備有使貫通板厚方向之複數之透孔以特定之圖案而被作開設所成之圖案遮罩部和位置於圖案遮罩部之周圍之遮蔽部並規定對於基板之處理範圍的例如恆範鋼(invar)製之遮罩板作重疊配置，並藉由蒸鍍源來使蒸鍍物質昇華或氣化，而使此昇華或氣化後的蒸鍍物質隔著遮罩板而附著、堆積於基板之其中一面(亦即是，成膜面)上，藉由此，來在基板之特定範圍中，將各種薄膜以特定之圖案來成膜(例如，參考專利文獻1)。通常，係在遮罩板之下方配置蒸鍍源(成膜源)，而以所謂的向上堆積式來進行成膜。For example, as one of the processes for manufacturing an organic EL element, it is known to form a specific thin film by a vacuum evaporation method. In this case, in a vacuum chamber capable of forming a vacuum atmosphere, a substrate made of glass, polyimide, or the like, and a plurality of through holes that penetrate the thickness direction of the plate are opened in a specific pattern. The pattern mask portion and the mask portion positioned around the pattern mask portion are arranged in an overlapping manner, for example, a mask plate made of invar made of a substrate, and a vapor deposition source is used to perform vapor deposition. Sublimation or vaporization of the substance, and the sublimation or vaporization of the vapor deposition substance is adhered to and deposited on one side (that is, the film-forming surface) of the substrate through a mask plate, and thus, the substrate is formed on the substrate. In a specific range, various thin films are formed in a specific pattern (for example, refer to Patent Document 1). Generally, a vapor deposition source (film-forming source) is arranged below a mask plate, and a film is formed by a so-called upward deposition method.
於此，在藉由真空蒸鍍來進行成膜的情況時，為了對於在以特定之圖案而被成膜的薄膜處之所謂遮罩模糊(亦即是，在隔著遮罩板而將特定之薄膜以特定之基準膜厚來成膜，並例如沿著其中一方向來對於薄膜之膜厚分布作了觀察時，以基準膜厚而被成膜之範圍為較遮罩板之其中一方向之開口寬幅而更狹窄，並一直成膜至了超過此開口寬幅之特定之範圍處)的發生作抑制，更理想，係使基板和遮罩板涵蓋其之全面地而相互密著。因此，一般而言，係進行有：將從遮罩板起而朝向基板的方向作為上方，並在基板上，隔著觸碰板而配置將於上下方向被作了著磁的複數之棒狀之磁石以使相互鄰接之該磁石之下側的磁極會互為相異的方式來在相對於磁石之長邊方向而相正交的方向上作並排設置所成的磁石陣列，藉由此，來構成為將基板夾入至觸碰板與遮罩板之間並藉由磁石陣列之吸引力來使遮罩板密著於基板之下面。Here, in the case of forming a film by vacuum evaporation, in order to obscure the so-called mask at the film formed in a specific pattern (that is, the specific When a thin film is formed with a specific reference film thickness and, for example, the film thickness distribution of the film is observed along one of the directions, the range in which the film is formed with the reference film thickness is one of the directions than the mask plate. The opening is wide and narrower, and a film is formed to a specific range exceeding the width of the opening) to suppress the occurrence. It is more desirable that the substrate and the masking plate cover each other comprehensively and closely. Therefore, in general, the direction from the mask plate toward the substrate is made upward, and on the substrate, a plurality of rod-shaped magnets that are magnetized in the up and down direction are arranged through the touch plate. The magnets are arranged side by side in a direction that is orthogonal to the direction of the long side of the magnet so that the magnetic poles on the lower sides of the adjacent magnets are different from each other. It is configured to sandwich the substrate between the touch panel and the mask plate and make the mask plate adhere to the bottom surface of the substrate by the attraction force of the magnet array.
另外，近年來，作為應處理之基板，係成為使用有大型且板厚為薄者(例如，1500mm×1800mm×厚度0.5mm)，伴隨於此，為了將通過遮罩板之各透孔而被成膜於基板上之膜以會具有剖面略矩形之輪廓的方式來作高精確度的成膜，作為遮罩板，係成為使用有數μm～數百μm之板厚的箔狀之物。然而，係得知了：若是將此種遮罩板，使用上述磁石陣列來以將該基板作夾入的方式而吸附在觸碰板上，則在遮罩板之圖案遮罩部處，係會局部性地發生朝向下方而上浮的部分。由於若是在圖案遮罩部處發生局部性的上浮，則會在被以特定之圖案而成膜的薄膜處發生所謂的遮罩模糊的情形，因此，係有必要盡可能地對此作抑制。In addition, in recent years, as a substrate to be processed, a large and thin plate (for example, 1500 mm × 1800 mm × thickness 0.5 mm) has been used. With this, in order to pass through the through holes of the mask plate, The film formed on the substrate is formed with a high-precision film so as to have a substantially rectangular cross-section. As a mask plate, a foil-shaped object having a plate thickness of several μm to several hundred μm is used. However, it was learned that, if such a mask plate is used to attract the touch plate by sandwiching the substrate using the above-mentioned magnet array, the pattern mask portion of the mask plate is A part that floats upwards may occur locally. Since a local uplift occurs at the pattern mask portion, so-called mask blurring may occur at a film formed with a specific pattern, so it is necessary to suppress this as much as possible.
因此，本案之發明者們，係反覆進行苦心研究，而得到了下述知識：亦即是，起因於基於某些之原因而發生作用的排斥力，在構成圖案遮罩部之各透孔中，於磁石之並排設置方向上而與遮蔽部相鄰接者的周緣係會上浮。可以推測到，此係因為，在遮蔽部和被開設有複數之透孔的圖案遮罩部處，通過該些場所的磁通量密度係為相異(亦即是，在遮蔽部和圖案遮罩部之間之邊界處，磁通量密度係大幅度改變)，起因於此，橫切過遮蔽部之磁通量係會與通過圖案遮罩部之磁通量相互干涉，並起因於此而導致作用有排斥力。 [先前技術文獻] [專利文獻]Therefore, the inventors of the present case conducted painstaking research repeatedly and obtained the following knowledge: that is, the repulsive force caused by the action for some reason is in each of the through holes constituting the pattern mask portion. The peripheral edge of a person adjacent to the shield in the direction in which the magnets are arranged side by side will float. It can be presumed that this is because the magnetic flux density passing through these places is different between the shielding portion and the pattern shielding portion provided with a plurality of through holes (that is, the shielding portion and the pattern shielding portion are different). At the boundary between them, the magnetic flux density is greatly changed.) Because of this, the magnetic flux that crosses the shielding part interferes with the magnetic flux passing through the pattern mask part, and causes a repulsive effect due to this. [Prior Art Literature] [Patent Literature]
[專利文獻1] 日本特開2013－93278號公報[Patent Document 1] Japanese Patent Laid-Open No. 2013-93278
[發明所欲解決之課題][Problems to be Solved by the Invention]
本發明，係為基於以上之知識所進行者，其課題，係在於提供一種：在以將基板夾入至觸碰板與遮罩板之間的方式來藉由磁石陣列之吸引力而使遮罩板密著於基板之下面時，具備有能夠對於在圖案遮罩部處而發生局部性的上浮的情形盡可能地作抑制而能夠防止在成膜後的薄膜處發生遮罩模糊的情形之構造之遮罩板、以及利用有此遮罩板之成膜方法。 [用以解決課題之手段]The present invention has been made based on the above knowledge, and its problem is to provide a method for shielding the substrate by the attraction of a magnet array so as to sandwich a substrate between a touch panel and a mask panel. When the cover plate is closely adhered to the bottom surface of the substrate, it is possible to prevent the occurrence of local floating at the pattern mask portion as much as possible and prevent the mask from blurring at the film after film formation. A structured mask plate and a film forming method using the mask plate. [Means to solve the problem]
為了解決上述課題，本發明，係為一種遮罩板，其係具備有：圖案遮罩部，係使貫通板厚方向之複數之透孔以特定之圖案而被作開設，而構成之；和遮蔽部，係位置於圖案遮罩部之周圍，該遮罩板，係對於基板之其中一面作密著或者是作近接配置，並規定對於基板之處理範圍，該遮罩板，其特徵為：係將從遮罩板起而朝向基板的方向作為上方，並在基板上，隔著觸碰板而配置將於上下方向被作了著磁的複數之磁石以使相互鄰接之該磁石之下側的磁極會互為相異的方式來作並排設置所成的磁石陣列，藉由此，來構成為將基板夾入至觸碰板與遮罩板之間並藉由磁石陣列之吸引力來密著於基板之下面，至少在磁石之並排設置方向上而與圖案遮罩部相鄰接之遮蔽部的部分，係被形成為會與圖案遮罩部之磁導率成為同等。In order to solve the above-mentioned problems, the present invention is a mask plate including: a pattern mask portion formed by opening a plurality of through-holes through a thickness direction of the plate in a specific pattern; and The masking portion is located around the pattern masking portion. The masking plate is closely or closely arranged to one side of the substrate, and specifies the processing range for the substrate. The masking plate is characterized by: The direction from the mask plate toward the substrate is upward, and on the substrate, a plurality of magnets magnetized in the up-down direction are arranged on the substrate through the touch plate so that the lower sides of the magnets adjoin each other. The magnetic poles are arranged side by side in a different manner from each other. By doing this, the substrate is sandwiched between the touch panel and the mask plate and densely attracted by the attraction of the magnetic array. The portion of the shielding portion that is adjacent to the pattern mask portion in the direction in which the magnets are arranged side by side is formed on the lower surface of the substrate so as to have the same magnetic permeability as the pattern mask portion.
若依據本發明，則由於係將在磁石之並排設置方向上的遮蔽部與圖案遮罩部之間之邊界處之磁通量密度的變化縮小，而對於作用有排斥力的情形作了抑制，因此，係對於在遮罩板之圖案遮罩部處而局部性地發生朝向下方而上浮的部分之情形盡可能地作抑制。其結果，係能夠防止在被成膜後的薄膜處發生遮罩模糊的情形。另外，在本發明中，在提及所謂的「遮蔽部之部分係成為與圖案遮罩部之磁導率同等」的情況時，實際上，係並不僅是指遮蔽部之部分的磁導率為與圖案遮罩部的磁導率(例如，沿著磁石之並排設置方向的平均磁導率)相互一致的情況，而亦包含有像是能夠藉由使遮蔽部與圖案遮罩部之間之邊界處之磁通量密度的變化縮小來對於作用有排斥力的情形作抑制一般之情況。According to the present invention, since the change in the magnetic flux density at the boundary between the shielding portion and the pattern shielding portion in the direction in which the magnets are arranged side by side is reduced, and the situation where a repulsive force acts is suppressed, This is to suppress as much as possible the situation in which a part that floats downward toward the pattern mask portion of the mask plate locally. As a result, it is possible to prevent the occurrence of mask blur in the thin film after being formed. In addition, in the present invention, when the so-called "part of the shielding part is equivalent to the magnetic permeability of the patterned mask part" is mentioned, actually, it does not only mean the permeability of the part of the shielding part The case is consistent with the magnetic permeability of the pattern mask portion (for example, the average permeability along the direction in which the magnets are arranged side by side), and also includes the possibility that the mask portion and the pattern mask portion can be separated by The change of the magnetic flux density at the boundary is reduced to suppress the case where the repulsive force is applied.
在本發明中，為了如同上述一般地使遮蔽部的部分會與圖案遮罩部之磁導率成為同等，例如係只要與形成於圖案遮罩部處之各透孔的圖案相互一致地而在遮蔽部之部分處將貫通板厚方向之複數之貫通孔以特定之圖案來形成即可。但是，在採用了此種構成的情況時，會成為在原本應針對對於基板之著膜作限制的部分而亦進行成膜。因此，只要在該貫通孔中填充非磁性材料，或者是以將複數之貫通孔所被形成的區域作覆蓋的方式，來貼附非磁性材料製之薄片材，便能夠並不會對於與圖案遮罩部之磁導率成為同等之功能有所損害地而針對對於原本應限制之基板之部分的著膜作防止。於此情況，作為非磁性材料，例如係可使用聚醯亞胺。In the present invention, in order to make the portion of the shielding portion and the magnetic permeability of the patterned masking portion equal to each other as described above, for example, as long as the pattern of each through hole formed in the patterned masking portion is consistent with each other, A part of the shielding portion may be formed in a specific pattern through a plurality of through holes in the thickness direction. However, when such a structure is adopted, it will become a film formation also in the part which originally should restrict the film formation of a board | substrate. Therefore, as long as the through-hole is filled with a non-magnetic material, or a sheet made of a non-magnetic material is attached so as to cover a region formed by a plurality of through-holes, it is not necessary to match the pattern. The magnetic permeability of the mask portion becomes equivalent and the function is impaired, and the film formation of the portion of the substrate that should be restricted should be prevented. In this case, polyimide can be used as the non-magnetic material.
又，為了解決上述課題，用以在基板之其中一面上以特定之圖案來成膜薄膜之本發明之成膜方法，其特徵為，係包含有下述之工程：作為遮罩板，使用具備有使貫通板厚方向之複數之透孔以特定之圖案而被作開設所成之圖案遮罩部位置於圖案遮罩部之周圍之遮蔽部，並且將於其中一方向上而與圖案遮罩部相鄰接之遮蔽部的部分和與圖案遮罩部之磁導率設為同等者，並將遮罩板與基板之其中一面作對位而使其重疊之工程；和將從遮罩板起而朝向基板的方向作為上方，並在基板之另外一面處，從其之上方來將觸碰板作載置，之後，在觸碰板上，將把於上下方向被作了著磁的複數之磁石以使相互鄰接之該磁石之下側的磁極會互為相異的方式來作了並排設置的磁石陣列，以使各磁石之並排設置方向會與上述其中一方向相互一致的姿勢來作配置，藉由此，來構成為將基板夾入至觸碰板與遮罩板之間並藉由磁石陣列之吸引力來使遮罩板密著於基板之其中一面上之工程；和使成膜源動作並隔著遮罩板來在基板之其中一面上進行成膜之工程。In addition, in order to solve the above-mentioned problems, the film forming method of the present invention for forming a thin film with a specific pattern on one surface of a substrate is characterized in that it includes the following processes: There is a masking portion in which a plurality of through-holes penetrating through the thickness direction are created in a specific pattern, and the masking portion is placed around the patterning masking portion, and the patterning masking portion is directed upward in one direction. A process in which the adjacent shielding portion and the patterned masking portion have the same magnetic permeability, and the masking plate and one side of the substrate are aligned and overlapped; and the process starts from the masking plate The direction toward the substrate is taken as the upper side, and the touch panel is placed on the other side of the substrate from above. After that, on the touch panel, a plurality of magnets are magnetized in the vertical direction. The magnet arrays are arranged side by side so that the magnetic poles on the lower sides of the magnets adjacent to each other are different from each other, and the orientations of the side by side magnets are arranged in a posture that coincides with one of the above directions. By this, come It is a process of sandwiching the substrate between the touch panel and the mask plate and making the mask plate adhere to one side of the substrate by the attraction of the magnet array; and actuating the film-forming source through the mask The board comes to perform a film forming process on one side of the substrate.
以下，參考圖面，針對將基板設為矩形之玻璃基板(以下，單純稱作「基板Sw」)，並對於被密著(或者是盡可能地近接配置)於基板Sw之其中一面(下面)處的本發明之遮罩板MP之實施形態以及利用有此遮罩板MP之成膜方法說明。以下，係將從遮罩板MP起而朝向基板Sw之方向設為上方，來進行說明。In the following, referring to the drawings, a glass substrate having a rectangular substrate (hereinafter simply referred to as "substrate Sw") is used, and one side (bottom) of the substrate Sw is adhered (or arranged as close as possible). An embodiment of the mask plate MP of the present invention and a film forming method using the mask plate MP are described below. Hereinafter, the direction from the mask plate MP toward the substrate Sw will be described as upward.
參考圖1以及圖2，遮罩板MP，係為具有數μm～數百μm之範圍內的板厚之箔狀物，並為在室溫附近之熱膨脹率為小並且相對性而言強度為高之金屬材料、例如恆範鋼製。遮罩板MP，係藉由使貫通板厚方向之複數之透孔11因應於想要在基板Sw上成膜之圖案而被作開設所成之圖案遮罩部1、和位置於圖案遮罩部1之周圍並針對對於基板Sw之著膜作限制的遮蔽部2，而構成之。在平面觀察下之各透孔11之輪廓，係因應於想要在基板Sw上成膜之膜的輪廓，而被適宜設定為矩形、圓形或橢圓等(在本實施形態中，係為矩形)。又，各透孔11之內壁面，係以不會產生遮罩模糊的方式，而被形成為朝向下方而使末端擴廣之搗藥砵狀(參考圖2)。另外，雖並未特別圖示說明，但是，在遮罩板MP之外周處，係亦可設置板厚較其而更厚之支持框(未圖示)，並構成為藉由支持框來將遮罩板MP作保持。1 and FIG. 2, the mask plate MP is a foil having a plate thickness in a range of several μm to several hundreds μm, and has a small thermal expansion coefficient near room temperature and a relative strength of High metallic materials such as Hengfan Steel. The mask plate MP is a pattern mask portion 1 formed by opening a plurality of through holes 11 penetrating through the thickness direction of the plate in accordance with a pattern to be formed on the substrate Sw, and the pattern mask The shielding portion 2 surrounding the portion 1 is configured to limit the filming of the substrate Sw. The outline of each of the through holes 11 in a plane view is appropriately set to a rectangle, a circle, or an ellipse according to the outline of the film to be formed on the substrate Sw (in this embodiment, it is rectangular ). In addition, the inner wall surface of each of the through holes 11 is formed in a mash-like shape that extends downward toward the bottom so as not to cause a mask blur (see FIG. 2). In addition, although it is not particularly illustrated, a support frame (not shown) having a thicker plate thickness may be provided at the outer periphery of the mask plate MP, and the support frame may be used to The mask plate MP is held.
在使遮罩板MP密著於基板Sw之下面，並例如藉由真空蒸鍍法來在基板Sw之下面隔著遮罩板而以特定之圖案來成膜特定之薄膜的情況時，係使用觸碰板Tp和磁石陣列Ma，來使遮罩板MP密著於基板Sw之下面。觸碰板Tp，係如同圖2中所示一般，使用從磁導率為小之金屬材料所選擇的例如沃斯田鐵(austenite)系不鏽鋼。基板Sw所密著之觸碰板Tp之下面，係被加工為具備有特定之平坦度，而構成為在使基板Sw涵蓋觸碰板Tp之全面地而作了密著時，發揮將基板Sw平坦地作保持之功用。另一方面，磁石陣列Ma，係藉由板狀之軛Yo、和在軛Yo之下面以等間隔而被作並排設置的棒狀之磁石Bm，來構成之。磁石Bm，係於上下方向被著磁，並以使相互鄰接之該磁石Bm之下側之磁極會互為相異的方式，來在相對於磁石Bm之長邊方向而正交的方向(圖2中之左右方向)上被作並排設置。It is used when the masking plate MP is adhered to the lower surface of the substrate Sw, and a specific thin film is formed in a specific pattern through the masking plate under the substrate Sw by a vacuum evaporation method, for example. The touch plate Tp and the magnet array Ma are used to closely contact the mask plate MP under the substrate Sw. As shown in FIG. 2, the touch panel Tp is made of a metal material having a small magnetic permeability, such as an austenite-based stainless steel. The underside of the touch panel Tp to which the substrate Sw is in close contact is processed to have a specific flatness, and is configured so that the substrate Sw is brought into close contact with the entire surface of the touch panel Tp to cover the substrate Sw. For flat maintenance. On the other hand, the magnet array Ma is constituted by a plate-shaped yoke Yo and rod-shaped magnets Bm arranged side by side at equal intervals below the yoke Yo. The magnet Bm is magnetized in the up-down direction, and the magnetic poles on the lower side of the magnet Bm adjacent to each other are different from each other in a direction orthogonal to the long side direction of the magnet Bm (Figure Left and right directions in 2) are set side by side.
以下，將成膜方法設為真空蒸鍍法，並針對在基板Sw之下面隔著遮罩板而以特定之圖案來成膜特定之薄膜的情況為例，來一併對於成膜方法作說明。另外，成膜方法，係並不被限定於真空蒸鍍法，而亦可使用濺鍍法或CVD法。雖並未特別圖示說明，但是，在實施成膜方法之真空蒸鍍裝置的真空腔之底面處，係被設置有作為成膜源之蒸發源，在蒸發源之鉛直方向上方處，係被配置有支持框，在此支持框處，遮罩板MP係以水平之姿勢而被作設置。首先，在遮罩板MP上進行對位並將基板Sw作重疊。於此情況，在遮罩板MP和基板Sw之間之特定位置處，係被設置有對位記號(未圖示)，一面藉由CCD攝像機等來對於對位記號進行攝像，一面針對相對於遮罩板MP之基板Sw的位置作調整。之後，在基板Sw上，使觸碰板Tp從上方而下降並作載置，之後，在觸碰板Tp上，使磁石陣列Ma從上方而下降並作設置。藉由此，來成為將基板Sw夾入至觸碰板Tp與遮罩板MP之間並藉由磁石陣列Ma之吸引力而使遮罩板MP密著於基板Sw之下面(圖2所示之狀態)。Hereinafter, a film deposition method is referred to as a vacuum evaporation method, and a case where a specific thin film is formed in a specific pattern through a mask plate below the substrate Sw is described as an example. . The film formation method is not limited to the vacuum evaporation method, and a sputtering method or a CVD method may be used. Although it is not particularly illustrated, the bottom of the vacuum chamber of the vacuum evaporation device that implements the film forming method is provided with an evaporation source as a film forming source, and above the vertical direction of the evaporation source, the A support frame is provided. At this support frame, the mask plate MP is set in a horizontal posture. First, alignment is performed on the mask plate MP, and the substrate Sw is overlapped. In this case, a registration mark (not shown) is provided at a specific position between the mask plate MP and the substrate Sw. While the registration mark is imaged by a CCD camera or the like, The position of the substrate Sw of the mask plate MP is adjusted. After that, the touch panel Tp is lowered and placed on the substrate Sw from above, and thereafter, the magnet array Ma is lowered and set on the touch panel Tp from above. As a result, the substrate Sw is sandwiched between the touch panel Tp and the mask plate MP, and the mask plate MP is closely adhered to the lower surface of the substrate Sw by the attraction force of the magnet array Ma (shown in FIG. 2). Status).
於此，若是如同上述一般地藉由磁石陣列Ma之吸引力而使遮罩板MP密著於基板Sw之下面，則圖案遮罩部1、特別是在磁石Bm之並排設置方向上而與遮蔽部2相鄰接之透孔11的遮蔽部2側之周緣11a，係會朝向下方而上浮。由於若是如此這般地在遮罩板MP處發生局部性的上浮，則會在被以特定之圖案而成膜的薄膜處發生所謂的遮罩模糊的情形，因此，係有必要盡可能地對此作抑制。另外，遮罩板MP之局部性的上浮，由於係難以藉由光學性手法等來對於剖面進行確認，因此，實際上係根據成膜於基板Sw上之後之膜的模糊狀況來作確認。故而，圖面係為所推測的概念圖。Here, if the mask plate MP is closely adhered to the lower surface of the substrate Sw by the attraction force of the magnet array Ma as described above, the pattern mask portion 1 is shielded from the magnet Bm in a side-by-side arrangement direction. The peripheral edge 11a of the shielding portion 2 side of the through hole 11 adjacent to the portion 2 floats downward. If a local uplift occurs at the mask plate MP in this way, a so-called mask blur will occur at a film formed with a specific pattern. Therefore, it is necessary to correct as much as possible. This is suppressed. In addition, it is difficult to confirm the cross-section of the mask plate MP by optical methods or the like. Therefore, it is actually confirmed based on the blurred state of the film formed on the substrate Sw. Therefore, the drawing is a conceptual map.
在本實施形態中，如同圖1中所示一般，在包圍圖案遮罩部1之遮蔽部2的部分21處，係與形成於圖案遮罩部1處之各透孔11的圖案相互一致地，而將貫通板厚方向之複數之貫通孔22以特定之圖案來形成，而使在作為其中一方向之各磁石Bm之並排設置方向上而與圖案遮罩部1相鄰接之遮蔽部2的部分21和圖案遮罩部1之磁導率成為同等。於此情況，貫通孔22之輪廓和開口面積，係與各透孔11相互一致，又，貫通孔22之相互之間的節距，亦係與各透孔11之相互之間的節距相互一致(亦即是，係藉由較原本之圖案遮罩部1而更大上一圈的面積來將各透孔11以特定之圖案而形成)。另外，貫通孔22所被形成之遮蔽部2之部分21的面積，係並未特別作限制，又，只要是能夠使磁導率成為同等(換言之，能夠將在各磁石Bm之並排設置方向上的遮蔽部2與圖案遮罩部1之間之邊界處的磁通量密度之變化縮小)，則形成於遮蔽部2之部分21處的貫通孔22之輪廓和節距等，係並不被限定於上述之構成。而，在各貫通孔22處，係藉由所謂封口處理而被填充有非磁性材料3。In this embodiment, as shown in FIG. 1, at the portion 21 surrounding the shielding portion 2 of the pattern masking portion 1, the pattern of each of the through holes 11 formed at the pattern masking portion 1 coincides with each other. A plurality of through-holes 22 penetrating through the thickness direction of the plate are formed in a specific pattern, so that the shielding portion 2 adjacent to the pattern mask portion 1 is adjacent to the pattern mask portion 1 in the direction in which the magnets Bm in one direction are arranged side by side. The magnetic permeability of the portion 21 is equal to that of the pattern mask portion 1. In this case, the contour and opening area of the through-holes 22 are consistent with each of the through-holes 11, and the pitch between the through-holes 22 is also the same as that between the through-holes 11. Consistent (that is, each of the through holes 11 is formed in a specific pattern by making the area of the previous circle larger than the original pattern mask portion 1). In addition, the area of the portion 21 of the shielding portion 2 formed by the through hole 22 is not particularly limited, and as long as the magnetic permeability can be made equal (in other words, it can be set in the direction in which the magnets Bm are arranged side by side). (The change in the magnetic flux density at the boundary between the shielding portion 2 and the pattern shielding portion 1 decreases.), The contour and pitch of the through holes 22 formed at the portion 21 of the shielding portion 2 are not limited to The above structure. The through-holes 22 are filled with a non-magnetic material 3 by a so-called sealing process.
作為被填充在各貫通孔22內之非磁性材料3，係並未特別作限制，而可使用聚醯亞胺等之樹脂。作為在各貫通孔22內填充非磁性材料3之封口處理，係使用有旋轉塗布或蒸鍍重疊法等，於此情況，係亦可於在遮罩板MP之上面被形成有非磁性材料之膜的狀態下來作使用。另外，在上述實施形態中，考慮到加工性，雖係針對以較原本之圖案遮罩部1而更大上一圈的面積來將各透孔11以特定之圖案而形成並將位置在較原本之圖案遮罩部1而更外側處者作為貫通孔22來使用之構成為例，來作了說明，但是，係亦可至少在磁石Bm之並排設置方向上而僅於與圖案遮罩部1相鄰接之遮蔽部2的部分21處形成貫通孔22。The non-magnetic material 3 filled in each of the through holes 22 is not particularly limited, and a resin such as polyimide may be used. As the sealing treatment for filling the non-magnetic material 3 in each of the through holes 22, a spin coating method or an evaporation overlap method is used. In this case, the non-magnetic material may be formed on the mask plate MP. The film state is used. In addition, in the above-mentioned embodiment, in consideration of the workability, the through-holes 11 are formed in a specific pattern with a larger area than the original pattern masking portion 1 and the positions are relatively The structure of the original pattern mask portion 1 and the outer side is used as the through hole 22 as an example to illustrate, but it can also be at least in the direction in which the magnets Bm are arranged side by side, and only with the pattern mask portion. A through hole 22 is formed at a portion 21 of the adjacent shielding portion 2.
當在基板Sw上隔著觸碰板Tp而設置磁石陣列Ma時，磁石陣列Ma，係被設為會使「將與圖案遮罩部1相鄰接之遮蔽部2的部分21和圖案遮罩部1之磁導率設為同等之方向」和「各磁石Bm之並排設置方向」會相互一致的姿勢。藉由此，在構成為將基板Sw夾入至觸碰板Tp與遮罩板MP之間並藉由磁石陣列Ma之吸引力而使遮罩板MP密著於基板Sw之下面的狀態下，在磁石Bm之並排設置方向上的遮蔽部2與圖案遮罩部1之間之邊界處的磁通量密度之變化係變小，作用有排斥力的情形係被作抑制。因此，係能夠對於在遮罩板MP之圖案遮罩部1處而局部性地發生朝向下方而上浮的部分之情形盡可能地作抑制。之後，在真空氛圍之真空腔內，使被與遮罩板MP作了對向配置的蒸鍍源動作而使蒸鍍物質昇華或氣化，並使此昇華或氣化後的蒸鍍物質隔著遮罩板而附著、堆積於基板Sw之下面，藉由此，薄膜係被以特定之圖案而成膜。藉由此，係能夠防止在被成膜後的薄膜處發生遮罩模糊的情形。又，由於係在貫通孔22中填充有非磁性材料3，因此，係能夠並不會對於與圖案遮罩部1之磁導率成為同等之功能有所損害地而針對對於原本應限制之基板Sw之部分的著膜確實地作防止。When the magnet array Ma is provided on the substrate Sw with the touch panel Tp interposed therebetween, the magnet array Ma is set such that "the portion 21 and the pattern mask of the masking portion 2 which are adjacent to the pattern masking portion 1" The magnetic permeability of the part 1 is set to the same direction "and" the direction in which the magnets Bm are arranged side by side "will agree with each other. Accordingly, in a state where the substrate Sw is sandwiched between the touch panel Tp and the mask plate MP, and the mask plate MP is closely adhered to the lower surface of the substrate Sw by the attraction force of the magnet array Ma, The change in the magnetic flux density at the boundary between the shielding portion 2 and the pattern shielding portion 1 in the direction in which the magnets Bm are arranged side by side becomes smaller, and a situation where a repulsive force acts is suppressed. Therefore, it is possible to suppress as much as possible a situation in which a portion that floats downward toward the pattern masking portion 1 of the masking plate MP locally and downwardly occurs. Thereafter, in a vacuum chamber in a vacuum atmosphere, the evaporation source that is opposed to the mask plate MP is operated to sublimate or vaporize the vapor deposition material, and to separate the vaporization material after the sublimation or vaporization. The thin film is adhered to and deposited on the underside of the substrate Sw with the mask plate formed in a specific pattern. This makes it possible to prevent the mask from blurring at the film after being formed. In addition, since the non-magnetic material 3 is filled in the through-hole 22, it is possible to target a substrate which should be restricted without impairing the function equivalent to the magnetic permeability of the pattern mask portion 1. Filming of the Sw part is definitely prevented.
以上，雖係針對本發明之實施形態作了說明，但是，本發明，係並不被限定於上述形態，在不脫離本發明之技術思想之範疇的範圍內，係可將本發明作變形。在上述實施形態中，雖係針對在貫通孔22中填充非磁性材料3者為例來作了說明，但是，係並不被限定於此，例如，係亦可如同圖4中所示一般，在複數之貫通孔22所被形成的遮蔽部2之部分21處，貼附非磁性材料製之特定厚度之薄片材4。作為此種薄片材4，例如係可使用聚醯亞胺製者。Although the embodiments of the present invention have been described above, the present invention is not limited to the above-mentioned forms, and the present invention can be modified within the scope not departing from the technical idea of the present invention. In the above-mentioned embodiment, the description is made by taking the non-magnetic material 3 filled in the through hole 22 as an example, but the system is not limited to this. For example, the system may be as shown in FIG. 4. A sheet 4 of a specific thickness made of a non-magnetic material is attached to a portion 21 of the shielding portion 2 formed by the plurality of through holes 22. As such a sheet material 4, for example, a polyimide can be used.
MP‧‧‧遮罩板MP‧‧‧Mask
Swl‧‧‧基板Swl‧‧‧ substrate
Tp‧‧‧觸碰板Tp‧‧‧Touchpad
Ma‧‧‧磁石陣列Ma‧‧‧Magnetic Array
Bm‧‧‧磁石Bm‧‧‧Magnet
1‧‧‧圖案遮罩部1‧‧‧ pattern mask
11‧‧‧透孔11‧‧‧ through hole
2‧‧‧遮蔽部2‧‧‧ shelter
22‧‧‧貫通孔22‧‧‧through hole
3‧‧‧非磁性材料3‧‧‧ Non-magnetic material
4‧‧‧薄片材4‧‧‧ sheet
[圖1] 係為將本實施形態之遮罩板的一部份作擴大展示之平面圖。 [圖2] 係為將沿著圖1之II-II的部分擴大剖面在本實施形態之遮罩板的使用狀態下作展示之圖。 [圖3] 係為對於先前技術例之遮罩板中的開口之周緣部處的上浮作說明之部分擴大剖面圖。 [圖4] 係為將本實施形態之變形例之遮罩板的一部份作擴大展示之剖面圖。[Fig. 1] It is a plan view showing a part of the mask plate of this embodiment as an enlarged display. [Fig. 2] is a diagram showing a partially enlarged cross-section taken along the line II-II in Fig. 1 in the state of use of the mask plate of this embodiment. [Fig. 3] is a partially enlarged cross-sectional view for explaining the floating at the peripheral edge portion of the opening in the mask plate of the prior art example. [Fig. 4] is a cross-sectional view showing a part of a mask plate according to a modification of this embodiment as an enlarged display.
Claims (4)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-168211 | 2017-09-01 | ||
| JP2017168211A JP6471200B1 (en) | 2017-09-01 | 2017-09-01 | Mask plate and film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201912817A true TW201912817A (en) | 2019-04-01 |
| TWI676695B TWI676695B (en) | 2019-11-11 |
Family
ID=65356210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107118376A TWI676695B (en) | 2017-09-01 | 2018-05-30 | Mask plate and film forming method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6471200B1 (en) |
| KR (1) | KR102132642B1 (en) |
| CN (1) | CN109423602B (en) |
| TW (1) | TWI676695B (en) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002075639A (en) * | 2000-08-29 | 2002-03-15 | Sony Corp | Pattern forming device, pattern forming method, manufacturing device and manufacturing method of organic electric field light emitting element display |
| JP4506214B2 (en) * | 2003-03-13 | 2010-07-21 | 東レ株式会社 | Organic electroluminescent device and manufacturing method thereof |
| JP2005302457A (en) * | 2004-04-09 | 2005-10-27 | Toray Ind Inc | Deposited mask and its forming method, and manufacturing method for organic electroluminescent equipment |
| WO2006027830A1 (en) * | 2004-09-08 | 2006-03-16 | Toray Industries, Inc. | Organic electroluminescent device and manufacturing method thereof |
| JP4428285B2 (en) * | 2005-05-16 | 2010-03-10 | セイコーエプソン株式会社 | Mask holding structure, film forming method, and electro-optical device manufacturing method |
| JP2010085588A (en) * | 2008-09-30 | 2010-04-15 | Sony Corp | Manufacturing method of optical component, and optical component, and manufacturing method of display device, and display device |
| WO2013039019A1 (en) * | 2011-09-14 | 2013-03-21 | トヨタ自動車東日本株式会社 | Electrode for photoelectric conversion device, and photoelectric conversion device |
| JP2013093278A (en) | 2011-10-27 | 2013-05-16 | Hitachi High-Technologies Corp | Organic el device manufacturing apparatus |
| JP5825139B2 (en) * | 2012-02-21 | 2015-12-02 | 大日本印刷株式会社 | Manufacturing method of vapor deposition mask |
| JP5516816B1 (en) * | 2013-10-15 | 2014-06-11 | 大日本印刷株式会社 | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate |
| CN103695842B (en) * | 2013-12-31 | 2015-12-09 | 信利半导体有限公司 | A kind of mask plate and preparation method thereof |
| KR20160035170A (en) * | 2014-09-22 | 2016-03-31 | 삼성디스플레이 주식회사 | Mask assembly and deposition apparatus using the same |
| CN106884139B (en) * | 2017-03-20 | 2022-04-26 | 京东方科技集团股份有限公司 | Evaporation mask plate, manufacturing method thereof, electromagnetic evaporation device and evaporation method |
-
2017
- 2017-09-01 JP JP2017168211A patent/JP6471200B1/en active Active
-
2018
- 2018-05-30 TW TW107118376A patent/TWI676695B/en active
- 2018-07-18 CN CN201810788659.6A patent/CN109423602B/en active Active
- 2018-08-30 KR KR1020180102540A patent/KR102132642B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN109423602A (en) | 2019-03-05 |
| KR20190025510A (en) | 2019-03-11 |
| JP2019044228A (en) | 2019-03-22 |
| CN109423602B (en) | 2019-09-20 |
| TWI676695B (en) | 2019-11-11 |
| JP6471200B1 (en) | 2019-02-13 |
| KR102132642B1 (en) | 2020-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102471409B1 (en) | Deposition mask device and method for manufacturing the deposition mask device | |
| TWI611031B (en) | Film forming cover and method of manufacturing film forming cover | |
| TWI614354B (en) | Deposition mask | |
| TWI721170B (en) | Shadow-mask-deposition system and method therefor | |
| TWI327175B (en) | ||
| US7976633B2 (en) | Device and method of forming film | |
| CN101090994B (en) | Mask holding mechanism and film forming apparatus | |
| US7271094B2 (en) | Multiple shadow mask structure for deposition shadow mask protection and method of making and using same | |
| US20210288297A1 (en) | Display substrate, method and device for manufacturing display substrate, and display device | |
| US9780341B2 (en) | Shadow mask, method of manufacturing a shadow mask and method of manufacturing a display device using a shadow mask | |
| JP2013245392A (en) | Vapor deposition mask and method for manufacturing the same | |
| KR20090127288A (en) | Substrate processing apparatus and substrate processing method | |
| JP7097821B2 (en) | Shadow mask deposition system and its method | |
| KR20160033338A (en) | Mask frame assembly for thin layer deposition, manufacturing method of the same and manufacturing method of organic light emitting display device there used | |
| KR102631580B1 (en) | Mask and its manufacturing method | |
| US10533246B2 (en) | Deposition mask, method for manufacturing the same, and touch panel | |
| JP2009054512A (en) | Mask | |
| TWI676695B (en) | Mask plate and film forming method | |
| CN114981468B (en) | Mask blank and mask equipment | |
| TWI737795B (en) | High-precision shadow-mask-deposition system and method therefor | |
| WO2018214633A1 (en) | Manufacturing method of display panel, and display panel motherboard | |
| TW202028857A (en) | A mask assembly and a display device | |
| JP2014098195A (en) | Thin film pattern formation method, alignment device, and vapor deposition device | |
| JP2013089586A (en) | Thin film patterning method and manufacturing method of organic el display device and organic el display device | |
| KR20240039663A (en) | deposition device |