CN109423602A - Mask plate and film build method - Google Patents
Mask plate and film build method Download PDFInfo
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- CN109423602A CN109423602A CN201810788659.6A CN201810788659A CN109423602A CN 109423602 A CN109423602 A CN 109423602A CN 201810788659 A CN201810788659 A CN 201810788659A CN 109423602 A CN109423602 A CN 109423602A
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- 238000000034 method Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 230000008569 process Effects 0.000 claims description 16
- 239000000696 magnetic material Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910001374 Invar Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of mask plate, it is when mask plate is fitted tightly over the lower surface of substrate so that substrate (Sw) folder is interposed between contact plate (Tp) and mask plate (MP) by the attraction by magnet array, it can inhibit the protrusion on open-work (11) periphery of patterned mask portion (1) as far as possible, and can prevent that exposure mask failure occurs on established film.Mask plate (MP) of the invention includes patterned mask portion (1), and multiple open-works (11) by plate thickness direction is opened up and penetrated through with defined pattern are constituted；And occlusion part (2), it is located at around patterned mask portion.At least be formed as identical as the magnetic conductivity in patterned mask portion in the part (21) that the occlusion part that on direction and patterned mask portion is adjacent is set side by side of magnet.
Description
Technical field
The present invention relates to a kind of mask plate and using the film build method of the mask plate, the mask plate includes pattern and covers
Film portion, multiple open-works by plate thickness direction is opened up and run through with defined pattern are constituted；And occlusion part, it is located at pattern
Around exposure mask portion；The mask plate fits closely or configures close to a face of substrate and limit the process range to substrate.
Background technique
Such as the vacuum vapour deposition of one of known process by as manufacture organic EL element forms defined film.This
When, in the vacuum chamber that can form vacuum atmosphere, by the substrate of glass or polyimides etc. and such as exposure mask made of invar
Plate overlaps, and the mask plate includes patterned mask portion, by being opened up with defined pattern and running through the more of plate thickness direction
A open-work is constituted；And occlusion part, it is located at around patterned mask portion；The mask plate limits the process range to substrate；
So that evaporation material is distilled or is gasified from evaporation source, the distillation or the evaporation material to have gasified are adhered to across mask plate, are deposited in
On one face (i.e. film forming face) of substrate, thus in the prescribed limit of substrate with defined pattern formed various films (such as
Referring to patent document 1).Usual evaporation source configuration below mask plate, by so-called substrate surface downward in a manner of form a film.
Herein, when being formed a film by vacuum evaporation, in order to inhibit to occur on the film formed with defined pattern
So-called exposure mask failure (forms defined film, such as observation along one with defined benchmark film thickness across mask plate
The opening when film thickness distribution of the film in a direction, with the range of benchmark film thickness film forming than a direction of mask plate
Amplitude is small, all forms film to the defined range for being more than the opening amplitude) the case where, so that substrate and mask plate is existed
It is fitted closely in its entire surface.Common mode is as a result: with the direction from mask plate towards substrate be it is upper, on substrate every
Contact plate magnet array is set, the magnet array by multiple columnar magnet for having magnetized in the up-down direction with magnet
The orthogonal direction of length direction on be set side by side and constitute, and the magnetic pole of the downside of the magnet adjacent to each other is different, thus
Fit closely mask plate on the lower surface of substrate by the attraction of magnet array so that substrate folder be interposed between contact plate and
Between mask plate.
Further more, in recent years, use large-scale and thin thickness substrate as substrate to be processed (such as 1500mm × 1800mm ×
Thickness 0.5mm), therewith, in order to which the film for forming each open-work by mask plate on substrate is accurately formed as section
Generally rectangular shaped profile uses the product of the foil-like with a thickness of several μm~several hundred μm.However, it is known that if using above-mentioned magnet
Array makes such mask plate clamp the substrate and be adsorbed on it on contact plate, then locally goes out in the patterned mask portion of mask plate
Now to the part of lower process.If patterned mask protrusion locally occurs in portion, institute occurs on the film of predetermined pattern formation
The exposure mask of meaning fails, it is therefore desirable to inhibit as far as possible to it.
Therefore, present inventor is by with keen determination, it is understood that the repulsion generated for some reason causes
Constitute the edge protrusion that open-work adjacent with occlusion part on direction is set side by side in each open-work in patterned mask portion in magnet.This
It is considered as (being blocked since the magnetic flux density passed through on occlusion part and the patterned mask portion for having opened up multiple open-works is different
Great changes will take place for magnetic flux density on the boundary in portion and patterned mask portion), cause due to the magnetic flux for crossing occlusion part with pass through
Interference occurs for the magnetic flux in patterned mask portion to generate repulsion.
[existing technical literature]
[patent document]
[patent document 1] Japanese Patent Publication 2013-93278 bulletin
Summary of the invention
Technical problems to be solved by the inivention
The present invention is formed based on above-mentioned cognition, the purpose is to provide a kind of mask plate and using the film forming side of the mask plate
Mask plate is fitted tightly over base lower surface so that substrate folder is interposed between in the attraction by magnet array by method, the mask plate
When between contact plate and mask plate, it can inhibit occur local protuberance in patterned mask portion as far as possible, and can prevent established thin
Exposure mask failure occurs on film.
Solve the means of technical problem
To solve the above problems, mask plate of the invention is comprising: patterned mask portion, by with defined
Pattern opens up and penetrates through multiple open-works composition of plate thickness direction；And occlusion part, it is located at around patterned mask portion；It is described
The face of the side of mask plate and substrate fits closely or close to configuration, limits the process range to substrate；With from mask plate direction
The direction of substrate be it is upper, on substrate be spaced contact plate distributed magnet array, the magnet array by magnetizing in the up-down direction
Multiple magnet be set side by side and constitute, and the magnetic pole of the downside of the magnet adjacent to each other is different, from there through magnet array
Attraction make the mask plate be fitted tightly over substrate lower surface so that substrate folder be interposed between contact plate and mask plate, until
It is few to be formed as the magnetic with patterned mask portion in the part that occlusion part adjacent with patterned mask portion on direction is set side by side of magnet
Conductance is identical.
Using the present invention, due to reduce magnet the occlusion part being set side by side on direction and patterned mask portion it is borderline
The variation of magnetic flux density inhibits repulsion to generate, so can inhibit direction locally occur in the patterned mask portion of mask plate as far as possible
The part of lower section protrusion.To prevent occurring exposure mask failure on established film.In addition, in the present invention, it is so-called
The case where " part of occlusion part is identical as the magnetic conductivity in patterned mask portion ", the magnetic conductivity of the practical not just part of occlusion part
The situation identical as magnetic conductivity (such as the average magnetic conductivity that direction is set side by side along magnet) in patterned mask portion, also including can
Inhibit the phenomenon that repulsion generates by the variation reduction of occlusion part and the borderline magnetic flux density in patterned mask portion.
In the present invention, as described above, it is identical as the magnetic conductivity in patterned mask portion in order to which the part of occlusion part is arranged, as long as
Such as it is consistent with the pattern of each open-work formed in patterned mask portion, run through on the part of occlusion part with the formation of defined pattern
Multiple through holes of plate thickness direction.But when using this structure, system should be being limited originally to the portion of the film forming of substrate
Film is also formed on point.Therefore, if filling non-magnetic material into the through hole, or piece made of non-magnetic material is pasted
Material if covering the region for foring multiple through holes, does not then lose function identical with the magnetic conductivity in patterned mask portion, just
It can prevent the film forming of the part for the substrate that should be limited script.At this point, as non-magnetic material, such as polyimides can be used.
Further more, in order to solve the above problems, for the sheet of film to be formed on the face of the side of substrate with defined pattern
The film build method of invention, which is characterized in that include following processes: having patterned mask portion and occlusion part as mask plate, described
Patterned mask portion is made of multiple open-works that plate thickness direction is opened up and penetrated through with defined pattern, and the sheltering part is in pattern
Around exposure mask portion, and use the part of the occlusion part adjacent with patterned mask portion in one direction and patterned mask portion
The identical product of magnetic conductivity, the process for aligning and coinciding the face of the side of mask plate and substrate；From mask plate towards substrate
Direction be it is upper, plate is placed into contact with from the upper side on the face of the other side of substrate, later with the arranged side by side of each magnet on contact plate
Setting direction and the consistent posture distributed magnet array in said one direction, the magnet array are set as magnetic in the up-down direction
The magnetic pole difference that the multiple magnet changed are set side by side as the downside of the magnet adjacent to each other, from there through the attraction of magnet array
So that substrate folder is interposed between the process between contact plate and mask plate on the face for the side that power makes mask plate be fitted tightly over substrate；With
And starting film deposition source, the process to form a film on the face of the side of substrate across mask plate.
Detailed description of the invention
Fig. 1 is the vertical view enlarged diagram for showing a part of mask plate of present embodiment.
Fig. 2 is partial cross section's enlarged drawing that the II-II along Fig. 1 is shown with the use state of the mask plate of present embodiment.
Fig. 3 is the enlarged partial sectional view for illustrating the opening edge portion protrusion on the mask plate of previous example.
Fig. 4 is to be related to the enlarged cross-sectional view of a part of mask plate of modified embodiment of the present embodiment.
Specific embodiment
With reference to the accompanying drawings, using the glass substrate of rectangle (hereinafter referred to as " substrate Sw ") as substrate, to substrate Sw
Side face (lower surface) fit closely (or as close as possible to configuration) mask plate MP of the invention embodiment and
It is illustrated using the film build method of mask plate MP.In the following contents, to be from mask plate MP towards the direction of substrate Sw
On be illustrated.
Referring to Figures 1 and 2, the foil-like mask plate that mask plate MP is thickness in several μm~several hundred μ ms, is room temperature
Neighbouring thermal expansion coefficient is small and the higher metal material of intensity such as invar made of.Mask plate MP is by 1 He of patterned mask portion
Occlusion part 2 is constituted, and patterned mask portion 1 according to the pattern to form a film on substrate Sw by opening up and running through exposure mask plate thickness direction
Multiple open-works 11 constitute, occlusion part 2 is located at around patterned mask portion 1, film forming of the restriction to substrate S.It is each in top view
The profile in hole 11 is suitably formed according to the profile for the film to be formed on substrate Sw as (this realities such as rectangle, circle or oblongs
Applying is rectangle in mode).Further more, the inner wall of each open-work 11 is formed as end gradually wide bowl-type (referring to Fig. 2) downward, with
Just exposure mask failure does not occur.In addition, illustrating although not shown, but the thicker bearing support of thickness can also be set in the periphery of mask plate MP
(not shown) keeps mask plate MP with bearing support.
So that mask plate MP is fitted tightly over the lower surface of substrate Sw, for example, by vacuum vapour deposition across mask plate in substrate
The lower surface of Sw forms defined film with defined pattern, at this point, making mask plate MP using contact plate Tp and magnet array Ma
It is fitted tightly over the lower surface of substrate Sw.Contact plate Tp from the small metal material of magnetic conductivity as shown in Fig. 2, select, such as make
Use austenitic stainless steel.Substrate Sw is fitted tightly over the lower surface of contact plate Tp, and the lower surface is processed as having defined flat
Smooth degree plays the effect for making substrate Sw keep flat when substrate Sw is bonded in its entire surface closely with contact plate Tp.It is another
Aspect, magnetic yoke Yo and the columnar magnet B m structure that in the lower surface of magnetic yoke Yo is at equal intervals set side by side of the magnet array Ma by plate
At.Magnet B m magnetizes in the up-down direction, is disposed in parallel in the direction orthogonal with the length direction of the magnet B m (left and right in Fig. 2
Direction) on, so that the magnetic pole of the downside of magnet B m adjacent to each other is different.
Below using vacuum vapour deposition as film build method, to press defined figure in the lower surface of substrate Sw across mask plate
In case where case forms defined film, it is illustrated, and illustrate film build method simultaneously.In addition, film build method is not limited to
Sputtering method or CVD method can be used in vacuum vapour deposition.Though explanation is not particularly illustrated, in the vacuum evaporation dress for implementing film build method
It is provided with the evaporation source as film deposition source on the bottom surface for the vacuum chamber set, bearing is provided with above the vertical direction of evaporation source
Frame, mask plate MP are arranged on the bearing support with horizontal attitude.Firstly, being aligned on mask plate MP and being overlapped substrate Sw.At this point,
Alignment mark (not shown) is set on the specified position of mask plate MP and substrate Sw, with the shooting alignment mark such as CCD camera
Meanwhile adjusting position of the substrate Sw relative to mask plate MP.Also, on substrate Sw, it is placed into contact with plate Tp down from the upper side,
Magnet array Ma is arranged on contact plate Tp down from top later.Substrate Sw folder is interposed between contact plate Tp and exposure mask as a result,
Between plate MP, mask plate MP is fitted tightly over by the attraction of magnet array Ma (shown in Fig. 2 on the lower surface of substrate Sw
State).
Herein, when as described above, making mask plate MP be fitted tightly over substrate Sw's by the attraction of magnet array Ma
When lower surface, especially blocking for open-work 11 adjacent with occlusion part 2 on direction is set side by side in magnet B m in patterned mask portion 1
The periphery 11a of 2 side of portion protrusion downwards.Like this when locally generating protrusion on mask plate MP, with defined pattern film forming
So-called exposure mask failure occurs on film, it is therefore desirable to inhibit as far as possible to it.In addition, the local protuberance of mask plate MP is difficult to
Optically etc. section is confirmed, so it is true to be that diaphragm failure situation by reality when forming film on substrate Sw is come
Recognize.To which attached drawing is the concept map imagined.
In the present embodiment, as shown in Figure 1, on the part 21 of occlusion part 2 for surrounding patterned mask portion 1, with pattern
The pattern that each open-work 11 is formed by exposure mask portion 1 forms the multiple perforations for running through plate thickness direction consistently with defined pattern
Hole 22 is identically formed in the magnetic conductivity of each magnet B m as a direction being set side by side on direction with patterned mask portion 1
The part 21 of the occlusion part 2 adjacent with patterned mask portion 1.At this point, the profile and opening area of through hole 22 be set as with it is each
Hole 11 is consistent, further more, spacing of the spacing also between each open-work 11 between through hole 22 is identical (i.e. than originally
Patterned mask portion 1 big one enclose area and each open-work 11 is formed with defined pattern).In addition, forming blocking for through hole 22
There is no particular restriction for the area of the part 21 in portion 2, as long as further more, it can make magnetic conductivity is identical (in other words, can reduce in each magnet
The variation of the borderline magnetic flux density of the occlusion part 2 being set side by side on direction and patterned mask portion 1 of Bm), the portion of occlusion part 2
Profile or the spacing etc. for dividing the through hole 22 formed on 21 are not limited by above-mentioned mode.Also, pass through so-called sealing
Processing is filled with non-magnetic material 3 in each through hole 22.
It as the non-magnetic material 3 being filled in each through hole 22, is not particularly limited, the tree such as polyimides can be used
Rouge.As the encapsulation process for filling non-magnetic material 3 in each through hole 22, using spin coating or vapor deposition coincidence method etc., at this point,
Can on the upper surface of mask plate MP formed non-magnetic material film state come using.In addition, in above-mentioned embodiment party
In formula, it is contemplated that operability, the area enclosed with the patterned mask portion 1 big one than script are simultaneously each to be formed with defined pattern
Hole 11 uses the hole in the outer part of patterned mask portion 1 than script as being illustrated for through hole 22, but as long as at least
Through hole only is formed on the part 21 of the occlusion part 2 adjacent with patterned mask portion 1 in being set side by side on direction for magnet B m
22.
When magnet array Ma is arranged across contact plate Tp on substrate Sw, magnet array Ma is disposed proximate to patterned mask
Direction one is set side by side with each magnet B m's in the identical direction of magnetic conductivity of the part 21 and patterned mask portion 1 of the occlusion part 2 in portion 1
The posture of cause.Substrate Sw folder is interposed between contact plate Tp and mask plate MP as a result, makes exposure mask by the attraction of magnet array Ma
Plate MP is fitted in the lower surface of substrate Sw closely, in this case, the occlusion part 2 being set side by side on direction and pattern of magnet B m
The borderline change in magnetic flux density in exposure mask portion 1 reduces and repulsion is inhibited to generate.Therefore, the figure in mask plate MP can be inhibited as far as possible
Locally occurs the part to lower process in case exposure mask portion 1.Also, starting in the vacuum chamber of vacuum atmosphere with mask plate MP phase
So that evaporation material is distilled or is gasified the evaporation source of configuration, so that the distillation or the evaporation material to have gasified is adhered to accumulation across exposure mask
On the lower surface of substrate Sw, film is thus formed with defined pattern.To prevent that exposure mask mistake occurs on the film to be formed
The case where effect.Further more, due to being filled with non-magnetic material 3 in through hole 22, so the magnetic with patterned mask portion 1 will not be lost
This identical function of conductance, reliably prevents the film forming of the part to the substrate Sw that should be limited.
Embodiments of the present invention are explained above, but the present invention is not limited thereto, it can also be without departing from skill of the invention
The present invention is deformed in range in art thought range.In the above-described embodiment, non-magnetic to be filled in through hole 22
Be illustrated in case where property material 3, but and lose and be limited to this, such as can also be as illustrated in fig. 4, by non-magnetic material system
At the sheet material 4 of specific thickness be pasted on the part 21 for foring the occlusion part 2 of multiple through holes 22.As such sheet material
4, product made of such as polyimides can be used.
Description of symbols
MP ... mask plate, Sw ... substrate, Tp ... contact plate, Ma ... magnet array, Bm ... magnet, 1 ... patterned mask portion,
11 ... open-works, 2 ... occlusion parts, 22 ... through holes, 3 ... non-magnetic materials, 4 ... sheet materials.
Claims (4)
1. a kind of mask plate comprising:
Patterned mask portion, multiple open-works by plate thickness direction is opened up and penetrated through with defined pattern are constituted；And
Occlusion part is located at around patterned mask portion；
The face of the side of the mask plate and substrate fits closely or close to configuration, limits the process range to substrate；
It take the direction from mask plate towards substrate as upper, interval contact plate distributed magnet array, the magnet array on substrate
It is set side by side and is constituted by magnetized multiple magnet in the up-down direction, and the magnetic pole of the downside of the magnet adjacent to each other is not
Together, the mask plate is made to be fitted tightly over the lower surface of substrate so that substrate folder is interposed between and connects from there through the attraction of magnet array
Between touch panel and mask plate；
At least be formed as and patterned mask in the part that occlusion part adjacent with patterned mask portion on direction is set side by side of magnet
The magnetic conductivity in portion is identical.
2. mask plate according to claim 1, it is characterised in that:
The multiple through holes for running through plate thickness direction are formed with defined pattern on the part of the occlusion part, to the through hole
Middle filling non-magnetic material.
3. mask plate according to claim 1, it is characterised in that:
The multiple through holes for running through plate thickness direction are formed with defined pattern on the part of the occlusion part, are pasted non magnetic
Sheet material made of material forms the region of these multiple through holes to cover.
4. a kind of film build method is the film build method for forming film on the face of the side of substrate with defined pattern,
It is characterized in that, includes following processes:
With patterned mask portion and occlusion part as mask plate, the patterned mask portion is by opening up simultaneously run-through board with defined pattern
Multiple open-works of thickness direction are constituted, the sheltering part around patterned mask portion, and using in one direction with
The identical product of magnetic conductivity of the part and patterned mask portion of the adjacent occlusion part in patterned mask portion, makes the one of mask plate and substrate
The process that the face of side aligns and coincides；
With the direction from mask plate towards substrate be it is upper, be placed into contact with plate from the upper side on the face of the other side of substrate, later
Direction and the consistent posture distributed magnet array in said one direction, the magnet are set side by side with each magnet on contact plate
Array be set as magnetized multiple magnet in the up-down direction be set side by side for the downside of the magnet adjacent to each other magnetic pole not
Together, so that substrate folder is interposed between and connects on the face for the side for making mask plate be fitted tightly over substrate from there through the attraction of magnet array
Process between touch panel and mask plate；And
Start film deposition source, the process to form a film on the face of the side of substrate across mask plate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-168211 | 2017-09-01 | ||
| JP2017168211A JP6471200B1 (en) | 2017-09-01 | 2017-09-01 | Mask plate and film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109423602A true CN109423602A (en) | 2019-03-05 |
| CN109423602B CN109423602B (en) | 2019-09-20 |
Family
ID=65356210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810788659.6A Active CN109423602B (en) | 2017-09-01 | 2018-07-18 | Mask plate and film build method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6471200B1 (en) |
| KR (1) | KR102132642B1 (en) |
| CN (1) | CN109423602B (en) |
| TW (1) | TWI676695B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002075639A (en) * | 2000-08-29 | 2002-03-15 | Sony Corp | Pattern forming device, pattern forming method, manufacturing device and manufacturing method of organic electric field light emitting element display |
| JP2005302457A (en) * | 2004-04-09 | 2005-10-27 | Toray Ind Inc | Deposited mask and its forming method, and manufacturing method for organic electroluminescent equipment |
| CN1867216A (en) * | 2005-05-16 | 2006-11-22 | 精工爱普生株式会社 | Mask holding structure, film forming method, electro-optic device manufacturing method, and electronic apparatus |
| CN101015234A (en) * | 2004-09-08 | 2007-08-08 | 东丽株式会社 | Organic electroluminescent device and fabricating method thereof |
| CN102165336A (en) * | 2008-09-30 | 2011-08-24 | 索尼公司 | Optical part manufacturing method, optical part, display device manufacturing method, and display device |
| WO2013039019A1 (en) * | 2011-09-14 | 2013-03-21 | トヨタ自動車東日本株式会社 | Electrode for photoelectric conversion device, and photoelectric conversion device |
| CN103695842A (en) * | 2013-12-31 | 2014-04-02 | 信利半导体有限公司 | Mask plate and production method thereof |
| JP5825139B2 (en) * | 2012-02-21 | 2015-12-02 | 大日本印刷株式会社 | Manufacturing method of vapor deposition mask |
| CN105637110A (en) * | 2013-10-15 | 2016-06-01 | 大日本印刷株式会社 | Metal plate, production method of metal plate, and method of producing vapor deposition mask by using metal plate |
| CN106884139A (en) * | 2017-03-20 | 2017-06-23 | 京东方科技集团股份有限公司 | One kind evaporation mask plate, its preparation method, electromagnetism evaporation coating device and evaporation coating method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4506214B2 (en) * | 2003-03-13 | 2010-07-21 | 東レ株式会社 | Organic electroluminescent device and manufacturing method thereof |
| JP2013093278A (en) | 2011-10-27 | 2013-05-16 | Hitachi High-Technologies Corp | Organic el device manufacturing apparatus |
| KR20160035170A (en) * | 2014-09-22 | 2016-03-31 | 삼성디스플레이 주식회사 | Mask assembly and deposition apparatus using the same |
-
2017
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-
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Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002075639A (en) * | 2000-08-29 | 2002-03-15 | Sony Corp | Pattern forming device, pattern forming method, manufacturing device and manufacturing method of organic electric field light emitting element display |
| JP2005302457A (en) * | 2004-04-09 | 2005-10-27 | Toray Ind Inc | Deposited mask and its forming method, and manufacturing method for organic electroluminescent equipment |
| CN101015234A (en) * | 2004-09-08 | 2007-08-08 | 东丽株式会社 | Organic electroluminescent device and fabricating method thereof |
| CN1867216A (en) * | 2005-05-16 | 2006-11-22 | 精工爱普生株式会社 | Mask holding structure, film forming method, electro-optic device manufacturing method, and electronic apparatus |
| CN102165336A (en) * | 2008-09-30 | 2011-08-24 | 索尼公司 | Optical part manufacturing method, optical part, display device manufacturing method, and display device |
| WO2013039019A1 (en) * | 2011-09-14 | 2013-03-21 | トヨタ自動車東日本株式会社 | Electrode for photoelectric conversion device, and photoelectric conversion device |
| JP5825139B2 (en) * | 2012-02-21 | 2015-12-02 | 大日本印刷株式会社 | Manufacturing method of vapor deposition mask |
| CN105637110A (en) * | 2013-10-15 | 2016-06-01 | 大日本印刷株式会社 | Metal plate, production method of metal plate, and method of producing vapor deposition mask by using metal plate |
| CN103695842A (en) * | 2013-12-31 | 2014-04-02 | 信利半导体有限公司 | Mask plate and production method thereof |
| CN106884139A (en) * | 2017-03-20 | 2017-06-23 | 京东方科技集团股份有限公司 | One kind evaporation mask plate, its preparation method, electromagnetism evaporation coating device and evaporation coating method |
Also Published As
| Publication number | Publication date |
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| TW201912817A (en) | 2019-04-01 |
| JP6471200B1 (en) | 2019-02-13 |
| KR20190025510A (en) | 2019-03-11 |
| TWI676695B (en) | 2019-11-11 |
| KR102132642B1 (en) | 2020-07-10 |
| JP2019044228A (en) | 2019-03-22 |
| CN109423602B (en) | 2019-09-20 |
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