TW201903917A - 用於半導體封裝中改良之脫層特性之系統及方法 - Google Patents

用於半導體封裝中改良之脫層特性之系統及方法 Download PDF

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Publication number
TW201903917A
TW201903917A TW107113958A TW107113958A TW201903917A TW 201903917 A TW201903917 A TW 201903917A TW 107113958 A TW107113958 A TW 107113958A TW 107113958 A TW107113958 A TW 107113958A TW 201903917 A TW201903917 A TW 201903917A
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Taiwan
Prior art keywords
epoxy resin
die
integrated circuit
epoxy
die attach
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TW107113958A
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English (en)
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泰威沙卡 雷福漢
菲爾伯特 瑞依斯
賈吉里特 菲雷瑞特
蘇堤 沙奈梭恩
傑潘 菲普皇
蘇馬沙克 君潘甘
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美商微晶片科技公司
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Publication of TW201903917A publication Critical patent/TW201903917A/zh

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

本發明提供用於產生(例如)一SOIC封裝之一積體電路封裝之系統及方法，該積體電路封裝已減少或消除由環氧樹脂釋氣導致之引線脫層，該環氧樹脂釋氣係由藉由環氧樹脂將一積體電路晶粒附接至一引線框之晶粒附接程序所引起。在該晶粒附接程序期間，或以與該晶粒附接程序相關聯之其他方式，(例如)使用經提供於該晶粒附接單元處之一加熱裝置，藉由加熱該環氧樹脂來減少該環氧樹脂釋氣。加熱該環氧樹脂可在該環氧樹脂反應中達成額外交聯，此可從而減少來自該環氧樹脂之釋氣，繼而減少或消除後續引線脫層。經定位於該晶粒附接位點處或附近之一加熱裝置可在該晶粒附接程序期間或以與該晶粒附接程序相關聯之其他方式，被用於將該環氧樹脂加熱至55ºC±5ºC之一溫度。

Description

用於半導體封裝中改良之脫層特性之系統及方法
本發明係關於半導體製造，例如係關於在晶粒附接程序期間藉由減少環氧樹脂釋氣而提供一半導體封裝中之改良之脫層特性(例如，提供減少的或消除的一引線框引線及/或DAP區域之脫層)之系統及方法。
許多習知積體電路(「IC」)封裝在暴露於某些環境條件下一時間量之後遭受脫層。例如，根據JEDEC MSL(「濕氣敏感性位準」)測試指定，許多IC封裝在85°C及85%濕度的濕氣負載要求持續168小時之後經歷脫層。如本文中所使用，「脫層」可指代引線框之區域(其可在一些裝置中鍍銀)與一鄰近結構或材料(例如，模製化合物或晶粒/IC晶片)之間之一分隔，該分隔可由例如，引線框與鄰近結構或材料之間之不良黏著性引起。脫層可影響IC封裝，導致在可靠性測試期間例如，歸因於濕氣、溫度或濕度之封裝及導線接合弱點(諸如當應力經施加至封裝時)。脫層亦可導致諸如斷裂或提升的導線接合之產品現場故障。 因此，需要減少或消除IC封裝(例如，SOIC(小外形積體電路)封裝)中之引線框脫層。僅作為一實例，需要減少或消除引線框脫層(例如，8引線SOIC(SOIC-8)及28引線SOIC(SOIC-28)半導體裝置外殼中之內部引線脫層)。JEDEC要求(JEDEC J-STD-020E)強制在MSL 1處使用經鈀塗覆之銅導線之導線接合區域上之零脫層，該評級指示裝置不係濕氣敏感的。組件必須經安裝及回焊於可允許時段(拆裝後之車間曝露時間)內。減少或消除引線指狀物脫層之一種方式係將裝置降級至MSL3，該評級界定在裝置經組裝於一PCB上之前暴露於環境條件一周之一最大值。然而，此通常將大量成本添加至部件，並當自防濕袋移除部件時需要客戶對部件之特殊處理。
許多IC封裝(諸如例如SOIC(小外形積體電路)封裝)在封裝品質測試期間遭受引線框脫層(例如，內部引線脫層)。本案發明人已判定，此引線脫層之一重要原因係此引線脫層係由晶粒附接程序引起之環氧樹脂釋氣，其中環氧樹脂經沈積於引線框墊上，且IC晶粒經安裝於引線框墊之環氧樹脂覆蓋的區域上，以藉此將晶粒緊固至引線框。 本發明提供減少或消除由晶粒附接程序引起之環氧樹脂釋氣所導致之引線脫層之系統及方法。在一些實施例中，使用此等系統及/或方法產生之SOIC封裝可符合具有零引線脫層之CuPdAu導線。此可使用CuPdAu導線來提供增加的成本節省並產生高品質產品。 在一些實施例中，在晶粒附接程序期間或以與晶粒附接程序相關聯之其他方式，例如使用提供於晶粒附接單元處之一加熱裝置，藉由加熱環氧樹脂而減少環氧樹脂釋氣。加熱環氧樹脂可在環氧樹脂反應中達成額外交聯，此可藉此減少來自環氧樹脂之釋氣，此可繼而減少或消除後續引線脫層。在一些實施例中，一加熱裝置用於在晶粒附接程序期間或以與晶粒附接程序相關聯之其他方式將環氧樹脂加熱至55ºC±5ºC之一溫度。 一項實施例提供一種用於製造一積體電路裝置之方法，該積體電路裝置包含經安裝於一引線框之一晶粒支撐區域上之一積體電路晶片，其中該方法包含(a)執行一晶粒附接程序以形成一積體電路結構，該晶粒附接包含將環氧樹脂沈積於該引線框之該晶粒支撐區域之至少一部分上，將該積體電路晶片安裝於該環氧樹脂覆蓋的晶粒支撐區域之上方，使得該環氧樹脂之一部分橫向地延伸於該積體電路晶片之一外周邊之外部，並使用一加熱裝置以在該安裝步驟期間施加熱量；(b)在該晶粒附接程序之後，對該積體電路結構執行一晶粒附接固化程序；(c)執行一導線接合程序以將至少一個導線接合至該積體電路結構；及(d)施加一成型材料以至少部分囊封該積體電路結構。 在一項實施例中，與根據一類似生產程序但無晶粒附接加熱步驟產生之一積體電路裝置相比，該加熱步驟包括加熱該環氧樹脂，以達成該環氧樹脂反應中之額外交聯並減少來自該環氧樹脂之釋氣。 在一項實施例中，與根據一類似生產程序而無晶粒附接加熱步驟產生之一積體電路裝置相比，該加熱步驟經組態將來自該環氧樹脂之釋氣之一量測減少至少三倍。 在一些實施例中，該加熱步驟包括使用該加熱裝置來將該環氧樹脂加熱至55ºC±15ºC之一溫度。在一些實施例中，該加熱步驟包括使用該加熱裝置來將該環氧樹脂加熱至55ºC±10ºC之一溫度。在一些實施例中，該加熱步驟包括使用該加熱裝置來將該環氧樹脂加熱至55ºC±5ºC之一溫度。在一些實施例中，該加熱步驟包括使用該加熱裝置來將該環氧樹脂加熱至約55ºC之一溫度。 在一項實施例中，該晶粒附接程序包含：使用一饋送裝置以將該引線框載送至環氧樹脂分配站；在該環氧樹脂分配站處，將該環氧樹脂沈積於該引線框之該晶粒支撐區域上；使用該饋送裝置以將具有沈積的環氧樹脂之該引線框載送至一晶片安裝站，該晶片安裝站具有一相關聯加熱器；且在該晶片安裝站處：將該積體電路晶片安裝於該環氧樹脂覆蓋的晶粒支撐區域之上方，且使用該加熱器來施加熱量以將熱量施加至至少該環氧樹脂，以達成該環氧樹脂反應中之額外交聯並減少來自該環氧樹脂之釋氣。 另一實施例提供用於製造一積體電路裝置之一系統，該系統包含經組態以將一引線框定位於一機器饋送器上之一負載單元，該引線框包含一晶粒支撐區域及複數個引線；該機器饋送器經組態以將該引線框傳遞至環氧樹脂分配單元及至一晶粒附接單元；其中該環氧樹脂分配單元經組態以將環氧樹脂沈積於該引線框之該晶粒支撐區域之至少一部分上；且其中該晶粒附接單元包含經組態以將該積體電路晶片安裝於該環氧樹脂覆蓋的晶粒支撐區域之上方之一安裝單元，且一晶粒附接加熱單元經組態以將熱量施加至至少該環氧樹脂，以達成該環氧樹脂反應中之額外交聯並減少來自該環氧樹脂之釋氣。 在一項實施例中，與無需加熱與該晶粒附接相關聯之該環氧樹脂產生之一積體電路裝置相比，該晶粒附接加熱單元經組態以減少來自該環氧樹脂之釋氣。 在一項實施例中，與無需加熱與該晶粒附接相關聯之該環氧樹脂產生之一積體電路裝置相比，該晶粒附接加熱單元經組態以將來自該環氧樹脂之釋氣之一量測減少至少三倍。 在一項實施例中，該晶粒附接加熱單元經組態以將該環氧樹脂加熱至約55ºC之一溫度。 在一項實施例中，該晶粒附接加熱單元經組態以將該環氧樹脂加熱至55ºC±10ºC之一溫度。 在一項實施例中，該晶粒附接加熱單元經組態以將該環氧樹脂加熱至55ºC±5ºC之一溫度。
[相關專利申請案] 本申請案主張2017年4月25日申請之共同擁有之美國臨時專利申請案第62/489,869號的優先權，出於所有目的，該案全部內容係以引用方式併入本文中。 圖1繪示根據一項例示性實施例之用於產生具有改良之引線脫層特性之一積體電路(IC)裝置/封裝(例如，減少的或消除的引線脫層)之一例示性組裝程序100。可藉由將一加熱步驟添加至晶粒附接(D/A)程序來改良所得IC封裝之引線脫層特性。在步驟102處，一晶粒附接(D/A)程序經執行，以將一積體電路晶粒(例如，晶片)附接至一引線框。一引線框可係載入於一機器饋送器(例如，一移動帶或軌道)上，並傳送至環氧樹脂分配單元。在步驟104處，環氧樹脂分配單元可將環氧樹脂沈積於一引線框之一上表面的至少一部分上(例如，經組態以接收IC晶粒之一引線框墊的一部分上)。 接著，機器饋送器可將環氧樹脂覆蓋的引線框傳送至一晶粒接合單元，該晶粒接合單元可包含一晶粒安裝裝置及一加熱裝置。在步驟106處，晶粒安裝裝置將晶粒安裝於引線框墊之環氧樹脂覆蓋的區域上，且一加熱裝置108加熱環氧樹脂之區域，以達成環氧樹脂反應中之額外交聯，此可從而減少來自環氧樹脂之釋氣，繼而減少或消除來自經產生IC封裝之引線脫層。加熱裝置108可在將IC晶片安裝至環氧樹脂覆蓋的引線框墊之前、期間及/或之後操作。在一些實施例中，加熱裝置108可在106處之晶粒附接程序期間或以與106處之晶粒附接程序相關聯之其他方式，將環氧樹脂加熱至約55ºC、或55ºC±10ºC或55ºC±5ºC之一溫度。 接著，在步驟110處，引線框及IC晶片結構可藉由一負載裝置而經負載至一雜誌中，以完成晶粒附接程序。接著，可使用任何已知的技術對步驟112處之結構執行一晶粒附接固化。接著，可在步驟114處執行一導線接合程序，例如，以將IC晶片連接至鄰近引線框墊之一或多個引線框引線。在一些實施例中，可使用CuPdAu接合導線。接著，一模製化合物可經施加至步驟116處之IC結構，例如，以至少部分囊封結構，且可使用任何已知的技術來執行一後模製固化(PMC)程序。接著，IC結構(其可包含任何數目之引線框及安裝於其上之IC晶片)可在步驟118處標記並在120至122處切割以提供複數個離散IC封裝。 圖2繪示根據一項實施例之例如，使用上文所論述之方法100之用於促進一經加熱晶粒附接程序之一例示性系統200。系統200可包含一輸入/負載器202、一機器饋送器204及一輸出/卸載器206。輸入/負載器202可經組態以將一引線框230負載於一自動傳送器或軌道210上，自動傳送器或軌道210可將引線框230載送至機器饋送器204。引線框230可包含一晶粒墊232及複數個引線指狀物234。在一些實施例中，各引線指狀物234之一頂部表面(例如，各引線指狀物234之一尖端區域236或(若干)其他區域)可藉由一粗糙化程序而經銀塗覆及/或實體粗糙化，例如，以增加一隨後沈積成型化合物與引線框230之間一接合。 機器饋送器204可包含環氧樹脂分配裝置212及一取置裝置214。環氧樹脂分配裝置212可將環氧樹脂216分配於引線框墊232上。接著，引線框230可經推進至取置裝置214，取置裝置214可將一積體電路(IC)晶片或晶粒250取置於引線框墊232之環氧樹脂覆蓋的部分上，以藉此將IC晶粒250接合至墊232。 一加熱器220可經提供於此晶粒接合程序(例如，與取置裝置214整合體現或分離)之位置處或附近。加熱器220可經組態以藉由取置裝置214在將IC晶粒250安裝至環氧樹脂覆蓋的引線框墊232之前、期間及/或之後加熱環氧樹脂216，以改良基於環氧樹脂的晶粒附接接合。例如，經加熱晶粒接合可達成環氧樹脂反應中之額外交聯，此可從而減少來自環氧樹脂之釋氣，繼而減少或消除來自產生的IC封裝之引線脫層。加熱器220可將環氧樹脂216加熱至任何可適合溫度，以改良環氧樹脂接合之一或多個特性。例如，在一些實施例中，加熱器220可在晶粒附接程序期間或以與晶粒附接程序相關聯之其他方式，將環氧樹脂216加熱至約55ºC；或55ºC±15ºC；或55ºC±10ºC；或55ºC±5ºC之一溫度。 加熱器220可包含可適於直接或間接加熱引線框晶粒墊232(例如，實體耦合至引線框230(例如，在晶粒墊232處)之一對流加熱器、一輻射加熱器、一加熱電纜、一強制空氣加熱器或一導電加熱器)上之環氧樹脂216的任何系統或裝置。加熱器220可係由電力、天然氣、丙烷、太陽能或任何其他能源供電。 在經加熱晶粒附接程序之後，具有經附接及環氧樹脂接合之IC晶片250(指示為經接合單元240)的引線框230可在軌道210上推進至一輸出/卸載裝置206，輸出/卸載裝置206可卸載經接合單元240，用於進一步處理(例如，由一成型材料囊封)。 圖3繪示通過環氧樹脂分配裝置212，緊接著具有用於提供一經加熱晶粒接合程序(例如，在將IC晶片250安裝至引線框墊232之前、期間及/或之後加熱環氧樹脂216)之一相關聯加熱器220之取置裝置214而推進之引線框230之一例示性實施例。在圖3中所示之例示性實施例中，加熱器220經定位於晶粒接合站點處。例如，加熱器220可經配置於軌道210之區段210A與210B之間之一開口處，該開口載送並推進引線框230通過晶粒附接系統。軌道區段210A可使引線框230推進通過環氧樹脂分配裝置212，其中大量環氧樹脂216經沈積於引線框墊232上，且接著至引線框墊232經對準於加熱器220之上方之一位置，如圖3中所示。在此位置處，加熱器220可將環氧樹脂216加熱(例如，至約55ºC；或55ºC±15ºC；或55ºC±10ºC；或55ºC±5ºC之一溫度)，且取置裝置214可將IC晶片250安裝於引線框墊232之環氧樹脂覆蓋的區域上。加熱器220可受(例如，自動地或手動地)控制，以在IC晶粒250藉由取置裝置214而經實體安裝至引線框墊232之前、期間及/或之後加熱環氧樹脂216。 在其他實施例中，加熱器220可經配置於軌道210之一連續區段之下方，且處於晶粒接合站點處。在其他實施例中，加熱器220可經配置於引線框230之上方。例如，加熱器220可經配置於引線框墊232之上方並與引線框墊232橫向偏移，以為取置裝置214提供空間以將晶粒250安裝至墊232。 在其他實施例中，加熱器220可經配置於接合站點之上游。例如，加熱器220可經定位於接合站點之一位置上游處之上方、下方或整合於軌道210中。軌道210可將引線框墊232推進至直接在加熱器220之上方或下方之一位置，其中加熱器220可經操作以將環氧樹脂216加熱至一目標溫度。接著，軌道210可用經加熱環氧樹脂216將引線框推進至接合站點，其中，接著，取置裝置214可將晶粒250安裝於墊232上之經加熱環氧樹脂216上。 圖4繪示使用本文中揭示之系統及方法形成之例如大量IC封裝之一例示性可靠性測試流程400(例如，包含在晶粒附接之前、期間及/或之後加熱晶粒附接環氧樹脂)。在步驟402處，執行大量IC封裝之掃描聲學成像(SAM)。在步驟404處，該批次在150ºC下烘烤24小時。在步驟406處，在85ºC及85%相對濕度下對該批次執行一濕度浸泡持續168小時。在步驟408處，該批次在260ºC下經受3次回焊。接著，在步驟410處該批次係由SAM成像，並檢查脫層或其他缺陷。 表1展示使用本文中揭示之系統及方法形成並根據圖4中所示之程序400測試之例如批量IC封裝之相關參數。表 1. 關於測試的 IC 封裝之參數 表2展示六批IC封裝之測試結果，其特徵在於表1中之資訊並根據圖4中所示之程序400測試。如所示，在測試流程程序之後，所有批次均未展示脫層。表 2.IC 封裝測試結果 圖5A及圖5B繪示根據習知技術形成之一例示性IC封裝500A(圖5A)與使用本文中揭示之系統及方法形成之一例示性IC封裝500B(圖5B)(例如，包含在晶粒附接之前、期間及/或之後加熱晶粒附接環氧樹脂)之間之差異。各例示性IC封裝500A、500B包含一引線框502，引線框502包含一晶粒墊504及引線指狀物506及藉由環氧樹脂514A、514B而安裝至引線框墊504之一IC晶粒/晶片510。如圖5A中所示，在習知IC封裝500A中，環氧樹脂釋氣512A之平均距離(超過環氧樹脂514A之外邊緣)可為約或大於環氧樹脂滲出之平均距離之3倍。相反，如圖5B中所示，在根據本發明之例示性IC封裝500B中，環氧樹脂釋氣512B之平均距離(超過環氧樹脂514B之外邊緣)可小於環氧樹脂滲出之平均距離之1倍。 儘管在本發明中詳細描述揭示之實施例，但應瞭解，可在不脫離其等精神及範疇之情況下對實施例作出各種改變、替換及變更。
100‧‧‧例示性組裝程序/方法/例示性系統
102‧‧‧步驟
104‧‧‧步驟
106‧‧‧步驟
108‧‧‧加熱裝置
110‧‧‧步驟
112‧‧‧步驟
114‧‧‧步驟
116‧‧‧步驟
118‧‧‧步驟
120‧‧‧步驟
122‧‧‧步驟
200‧‧‧系統
202‧‧‧輸入/負載器
204‧‧‧機器饋送器
206‧‧‧輸出/卸載器/卸載裝置
210‧‧‧自動傳送器或軌道
210A‧‧‧軌道區段
210B‧‧‧區段
212‧‧‧環氧樹脂分配裝置
214‧‧‧取置裝置
216‧‧‧環氧樹脂
220‧‧‧加熱器
230‧‧‧引線框
232‧‧‧引線框晶粒墊
234‧‧‧引線指狀物
236‧‧‧尖端區域
240‧‧‧經接合單元
250‧‧‧積體電路(IC)晶片或晶粒
400‧‧‧例示性可靠性測試流程/程序
402‧‧‧步驟
404‧‧‧步驟
406‧‧‧步驟
408‧‧‧步驟
410‧‧‧步驟
500A‧‧‧例示性IC封裝/習知IC封裝
500B‧‧‧例示性IC封裝
502‧‧‧引線框
504‧‧‧引線框墊/晶粒墊
506‧‧‧引線指狀物
510‧‧‧IC晶粒/晶片
512A‧‧‧環氧樹脂釋氣
512B‧‧‧環氧樹脂釋氣
514A‧‧‧環氧樹脂
514B‧‧‧環氧樹脂
下文結合圖式描述本發明之例示性態樣，其中： 圖1繪示根據一項例示性實施例之用於產生具有改良之引線脫層特性之一積體電路(IC)裝置/封裝(例如，減少的或消除的引線脫層)之一例示性組裝程序。 圖2繪示根據一項實施例之(例如)使用圖1中所示之例示性程序之用於促進一經加熱晶粒附接程序之一例示性系統。 圖3繪示根據一項實施例之通過環氧樹脂分配裝置，緊接著具有用於提供一經加熱晶粒接合程序之一相關聯加熱器之一取置裝置而推進之一引線框之一例示性實施例。 圖4繪示根據一項實施例之使用本文中揭示之系統及方法形成之(例如)大量IC封裝之一例示性可靠性測試流程(包含在晶粒附接之前、期間及/或之後加熱晶粒附接環氧樹脂)。 圖5A及圖5B繪示根據習知技術形成之一例示性IC封裝(圖5A)與使用本文中揭示之系統及方法形成之一例示性IC封裝(圖5B)(例如，包含在晶粒附接之前、期間及/或之後加熱晶粒附接環氧樹脂)之間的差異。

Claims (13)

  1. 一種用於製造一積體電路裝置之方法，該積體電路裝置包含經安裝於一引線框之一晶粒支撐區域上之一積體電路晶片，該方法包括： 執行一晶粒附接程序，以形成一積體電路結構，該晶粒附接包含： 將環氧樹脂沈積於該引線框之該晶粒支撐區域的至少一部分上； 將該積體電路晶片安裝於該環氧樹脂覆蓋的晶粒支撐區域的上方，使得該環氧樹脂的一部分橫向地延伸於該積體電路晶片之一外周邊的外部；及 在該安裝步驟期間，使用一加熱裝置以施加熱量； 在該晶粒附接程序之後，對該積體電路結構執行一晶粒附接固化程序； 執行一導線接合程序，以將至少一個導線接合至該積體電路結構；及 施加一成型材料，以至少部分囊封該積體電路結構。
  2. 如請求項1之方法，其中與根據一類似生產程序但無該晶粒附接加熱步驟產生之一積體電路裝置相比，該加熱步驟包括加熱該環氧樹脂，以達成該環氧樹脂反應中之額外交聯，並減少來自該環氧樹脂之釋氣。
  3. 如請求項1之方法，其中，與根據一類似生產程序但無該晶粒附接加熱步驟產生之一積體電路裝置相比，該加熱步驟經組態將來自該環氧樹脂之釋氣之一量測減少至少三倍。
  4. 如請求項1之方法，其中該加熱步驟包括使用該加熱裝置以將該環氧樹脂加熱至約55ºC之一溫度。
  5. 如請求項1之方法，其中該加熱步驟包括使用該加熱裝置以將該環氧樹脂加熱至55ºC±10ºC之一溫度。
  6. 如請求項1之方法，其中該加熱步驟包括使用該加熱裝置以將該環氧樹脂加熱至55ºC±5ºC之一溫度。
  7. 如請求項1之方法，其中該晶粒附接程序包含： 使用一饋送裝置，以將該引線框載送至環氧樹脂分配站； 在該環氧樹脂分配站處，將該環氧樹脂沈積於該引線框之該晶粒支撐區域上； 使用該饋送裝置以將具有經沈積之環氧樹脂之該引線框載送至一晶片安裝站，該晶片安裝站具有一相關聯加熱器； 在該晶片安裝站處： 將該積體電路晶片安裝於該環氧樹脂覆蓋之晶粒支撐區域的上方；及 使用該加熱器以將熱量施加至至少該環氧樹脂，以達成該環氧樹脂反應中之額外交聯，並減少來自該環氧樹脂之釋氣。
  8. 一種用於製造一積體電路裝置之系統，該系統包括： 一負載單元，其經組態以將一引線框定位於一機器饋送器上，該引線框包含一晶粒支撐區域及複數個引線； 該機器饋送器經組態以將該引線框傳遞至環氧樹脂分配單元及至一晶粒附接單元； 其中該環氧樹脂分配單元經組態以將環氧樹脂沈積於該引線框之該晶粒支撐區域的至少一部分上； 其中該晶粒附接單元包含： 一安裝單元，其經組態以將該積體電路晶片安裝於該環氧樹脂覆蓋之晶粒支撐區域的上方；及 一晶粒附接加熱單元，其經組態以將熱量施加至至少該環氧樹脂，以達成該環氧樹脂反應中之額外交聯，並減少來自該環氧樹脂之釋氣。
  9. 如請求項8之系統，其中，與無需加熱與該晶粒附接相關聯之該環氧樹脂產生之一積體電路裝置相比，該晶粒附接加熱單元經組態以減少來自該環氧樹脂之釋氣。
  10. 如請求項8之系統，其中，與無需加熱與該晶粒附接相關聯之該環氧樹脂產生之一積體電路裝置相比，該晶粒附接加熱單元經組態以將來自該環氧樹脂之釋氣之一量測減少至少三倍。
  11. 如請求項8之系統，其中，該晶粒附接加熱單元經組態以將該環氧樹脂加熱至約55ºC之一溫度。
  12. 如請求項8之系統，其中該晶粒附接加熱單元經組態以將該環氧樹脂加熱至55ºC±10ºC之一溫度。
  13. 如請求項8之系統，其中該晶粒附接加熱單元經組態以將該環氧樹脂加熱至55ºC±5ºC之一溫度。
TW107113958A 2017-04-25 2018-04-25 用於半導體封裝中改良之脫層特性之系統及方法 TW201903917A (zh)

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