TW201842214A - Film forming method and vacuum processing apparatus - Google Patents

Abstract

Provided are a film forming method of an IGZO film with excellent characteristics and reliability of a TFT when applied to the TFT using an oxide semiconductor such as an IGZO film as a channel layer, and a vacuum processing apparatus suitable for forming the IGZO film. The film forming method according to the present invention comprises the following steps of: providing a sintered body containing indium, gallium, and zinc as a target (42a); arranging an object to be processed (W) in a vacuum processing chamber (Vc4) in which the target is installed to introduce a discharge gas and an oxygen gas if the vacuum processing chamber is vacuum evacuated to a predetermined pressure; introducing a predetermined power to the target to sputter the target; and forming an IGZO film on a surface of the object to be processed by reactive sputtering. The film forming method further comprises a step of setting a water pressure in the vacuum processing chamber to a range of 1 * 10<SP>-5</SP>Pa to 1 * 10<SP>-3</SP>Pa before the target sputtering starts.

Description

Film forming method and vacuum processing device

The present invention relates to a film-forming method and a vacuum processing apparatus, and more specifically, it relates to a method in which a sintered body containing indium, gallium, and zinc is suitable as a target, and the target is subjected to sputtering, and reactive sputtering On the surface of the object to be processed, an IGZO film is formed.

In recent years, an oxide semiconductor such as indium gallium zinc oxide (IGZO) is used as a channel layer of a thin film transistor (hereinafter, referred to as a “TFT”) for driving a display device in a flat panel display. For example, an IGZO film as an oxide semiconductor is generally formed using a sputtering apparatus. In this case, a sintered body containing indium, gallium, and zinc is used as a target, and a processing object is arranged in a vacuum processing chamber provided with a sputtering device equipped with the target. If the vacuum processing chamber is evacuated to a specific pressure, Then, a gas and oxygen for discharge are introduced, and a specific power is applied to the target to sputter the target, thereby forming an IGZO film on the surface of the processing object by reactive sputtering (for example, See Patent Document 1).

When the IGZO film is to be formed by the above-mentioned sputtering device, the glass substrate on which the gate and the like have been formed is held by a carrier, and the film is transferred to a vacuum processing chamber in this state to form a film. According to the research by the inventors of the present invention, it is known that the water molecules remaining in the vacuum processing chamber or the water molecules attached to the substrate and the carrier and brought into the vacuum processing chamber may affect the (initial) characteristics and reliability of the TFT. Sex. Specifically, if the water pressure in the vacuum processing chamber is lower than a specific pressure, a problem arises that the rising voltage (V _ON ) is shifted to the positive side. On the other hand, if the water pressure in the vacuum processing chamber is higher than a specific pressure, the IGZO film will have a low film density and many defects due to weak coupling of OH ^- or O ^- and decrease the electron mobility. Or the problem that the rising voltage (V _ON ) shifts to the positive side. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2013-64185

[Problems to be Solved by the Invention]

The present invention has been completed based on the above findings, and its object is to provide an IGZO film with excellent characteristics and reliability when an oxide semiconductor such as an IGZO film is applied to a TFT as a channel layer. Method and vacuum processing apparatus suitable for film formation of such an IGZO film. [Means to solve the problem]

In order to solve the above-mentioned problem, the present invention is a film forming method which uses a sintered body containing indium, gallium, and zinc as a target, and arranges a processing object in a vacuum processing chamber provided with the target. When the exhaust gas is exhausted to a specific pressure, a discharge gas and oxygen are introduced, and a specific power is applied to the target to sputter the target, thereby reacting the surface of the object by reactive sputtering. The film-forming IGZO film is characterized in that it includes a process of setting the moisture pressure in the vacuum processing chamber to a range of 1 × 10 ^-5 Pa to 1 × 10 ^-3 Pa before the sputtering of the target is started.

According to the film forming method of the present invention, it can be confirmed that by controlling the moisture pressure in the vacuum processing chamber during the film formation by sputtering of the target material to a specific range, it is possible to obtain a TFT having excellent characteristics and reliability. IGZO film. In this case, if the water pressure is lower than 1 × 10 ^-5 Pa, a problem arises that the rising voltage (V _ON ) is shifted to the positive side. On the other hand, when the water pressure is higher than 1 × 10 ^-3 Pa, the film density will be low and the majority due to the presence of OH ^- or O ^- IGZO film coupling of weak defects generated reduced electron mobility or The problem that the rising voltage (V _ON ) shifts to the positive side.

In addition, although it may be considered in a vacuum processing apparatus that performs a specific process such as film formation or etching, when the moisture pressure in the vacuum processing chamber is controlled to a specific range, the vacuum processing chamber is heated before the processing. The air is evacuated and the water molecules remaining in the vacuum processing chamber or the water molecules brought into the vacuum processing chamber are evacuated by this, but in this way, it depends on the water pressure in the vacuum processing chamber to be controlled The problem may be that the vacuum exhaust takes a long time and cannot be processed as quickly as possible, resulting in poor productivity. In this case, in the prior art, a vacuum heating chamber is connected to the vacuum processing apparatus, and the heating target is heated in the vacuum heating chamber to remove water molecules attached to the processing target. Even with this method, if the water molecules are not sufficiently detached from the object to be processed in the vacuum heating chamber first, the water molecules will be brought into the vacuum processing chamber. As a result, they will depend on the moisture in the vacuum processing chamber to be controlled. Pressure, it takes a long time in vacuum exhaust.

Therefore, the vacuum processing apparatus of the present invention includes a vacuum heating chamber including a first vacuum pump and a heating means, and the processing target is heated by a heating means in a state where the first vacuum pump is evacuated. The object is heated to remove the water molecules attached to the object to be processed, and the storage chamber is provided with a second vacuum pump. The object to be processed is heated in a vacuum environment from the vacuum heating chamber, and is transferred in the vacuum environment. 2 The vacuum pump is used to store the processing object after the vacuum is exhausted, and the vacuum processing chamber has a third vacuum pump. From the storage chamber, the processing object is transported in a vacuum environment. Specific treatment is performed on the object to be processed in the air-conditioned state.

According to the vacuum processing apparatus of the present invention, since a storage chamber is provided on a path where a processing object between the vacuum heating chamber and the vacuum processing chamber is transported, the processing target after the water molecules are separated in the vacuum heating chamber in advance The structure that stores water in a vacuum environment and further evacuates water molecules. Therefore, it is not necessary to wait until the water molecules in the vacuum heating chamber are sufficiently separated from the object to be processed, and the water can be transferred to the storage room. The processing object in a state where the molecules are further separated is transferred to the vacuum processing chamber. In addition, processing can be performed in parallel in a vacuum heating chamber, a storage chamber, and a vacuum processing chamber. As a result, the time of vacuum exhaust until the moisture pressure in the vacuum processing chamber to be controlled can be shortened, and a specific process can be started as quickly as possible. Processing while improving productivity.

In addition, in the present invention, when it is referred to as a "processing object", it is not only a glass substrate or a silicon wafer that is subjected to a specific process such as film formation or etching, and is, for example, mounted on a glass substrate When the carrier is transported, the concept of a carrier is also included. In addition, as the vacuum processing device, not only the vacuum heating chamber, the storage chamber, and the vacuum processing chamber are connected in one direction through a gate valve (so-called in-line vacuum processing device), but also a so-called cluster equipment type . The vacuum heating chamber may also be a so-called load lock chamber that also serves as a place for allowing the object to be processed in and out.

Further, in the present invention, it is preferable to have a first measurement means for measuring the water pressure in the vacuum heating chamber and a second measurement means for measuring the water pressure in the storage chamber, and further include a determination means, which is intended to When the first measurement value measured by the first measurement means reaches a specific value, and when the second measurement value measured by the second measurement means reaches a specific value lower than the first measurement value, the processing object is allowed to be transported. According to this, the object to be processed in a state where the water molecules are efficiently separated can be transferred to the vacuum processing chamber, and as a result, productivity can be further improved. Furthermore, in the present invention, in order to further improve productivity, an adsorption means for absorbing water molecules is provided in the storage chamber.

In addition, when the vacuum processing apparatus is applied to the film formation of an IGZO film, as long as the vacuum processing chamber is provided with a target including a sintered body of indium, gallium, and zinc, a power source for inputting power to the target, the discharge gas and oxygen gas were introduced into the introduction means, and a measuring means for measuring a third vacuum processing chamber of the partial pressure of water, and water is provided with a vacuum processing chamber when the pressure reaches ^{1 × 10 -5 Pa ~ 1 ×} 10 - A specific value within the range of ³ Pa may be a means of controlling the introduction of a gas and oxygen for discharge and an electric power input to the target.

Hereinafter, referring to the drawings, a case where the object to be processed is a glass substrate W and an IGZO film is formed on one side of the glass substrate W is taken as an example to explain the film forming method of the IGZO film and the IGZO film suitable for the present invention. An embodiment of the vacuum processing apparatus for film formation. In the following description, the glass substrate W is a person who is transported in a posture of standing upright, and indicates the directions of up, down, left, and right, and is based on the first figure.

Referring to Fig. 1, VM is a vacuum processing apparatus of this embodiment. The vacuum processing device VM includes first to fourth vacuum chambers Vc1, Vc2, Vc3, and Vc4 connected to each other through the gate valve Gv in one direction, and the glass substrate W can be transferred to the substrate transfer means TP. Specific positions in the first to fourth vacuum chambers Vc1, Vc2, Vc3, and Vc4. The substrate transfer means TP includes a carrier Tc, which holds the glass substrate W in a vertical position, and a carrier transfer means Tt, which transfers the carrier Tc in a horizontal direction in the vacuum processing apparatus VM. In addition, since a well-known person having a plurality of rollers can be used as the substrate transfer means TP, a more detailed description is omitted.

The first vacuum chamber Vc1 on the upstream side (the leftmost side in the first figure) functions as a so-called load lock chamber, and is provided with a vacuum pump 11 for evacuating the inside thereof and opening the inside to the atmosphere.的 气阀 12。 The ventilation valve 12. In this case, the vacuum pump 11 is selected from those who can quickly evacuate the first vacuum chamber Vc1 in a pressure range from atmospheric pressure to a specific pressure (40 Pa). For example, a rotary pump can be used. In addition, an opening and closing door (not shown) is provided on the side wall of the first vacuum chamber Vc1. In the first vacuum chamber Vc1 in the atmospheric pressure state, the glass substrate W before processing can be installed and processed on the carrier Tc. The glass substrate W is detached from the carrier Tc. In addition, in order to take out the processed glass substrate W, another load lock chamber may be provided downstream of the fourth vacuum chamber Vc4.

The second vacuum chamber Vc2, which is adjacent to the first vacuum chamber Vc1, functions as a vacuum heating chamber of this embodiment, and is provided with a vacuum exhaust to a specific pressure (1 × 10 ^-3 Pa). And a heating means 22 for heating the glass substrate W held by the carrier Tc. In this case, the vacuum pump 21 is selected from those capable of efficiently exhausting a gas containing water molecules detached from the carrier Tc or the glass substrate W. For example, a turbo molecular pump having a foreline pump may be used. . The heating means 22 is not particularly limited as long as the carrier Tc or the glass substrate W can be heated to a specific temperature (for example, a temperature in a range of 100 to 120 ° C.) to effectively remove water molecules, and for example, a sheath can be used. Heater. Moreover, the second vacuum chamber Vc2 is provided with a mass analysis tube 23 as a first measurement means, and the water pressure in the inside can be measured. In this case, if the water pressure (the first measurement value) measured by the mass analysis tube 23 is lower than a specific value (for example, 1 × 10 ^-2 Pa), the glass substrate W to the third vacuum chamber Vc3 is allowed. Transportation.

The third vacuum chamber Vc3 adjacent to the second vacuum chamber Vc2 is used as a storage chamber of this embodiment, and is provided with a vacuum exhaust to a specific pressure (1 × 10 ^-4 Pa). Vacuum pump 31. In this case, the vacuum pump 31 is particularly selected from those who can efficiently exhaust water molecules. For example, a cryopump can be used. In the third vacuum chamber Vc3, a low-temperature plate 32 as an adsorption means is provided opposite the glass substrate W supported by the carrier Tc, and water molecules are actively adsorbed by the plate surface of the low-temperature plate 32. The third vacuum chamber Vc3 is also provided with a mass analysis tube 33 as a second measurement means, and the water pressure in the inside can be measured. In this case, if the water pressure (second measurement value) measured by the mass analysis tube 33 is lower than a specific value (for example, 5 × 10 ^-3 Pa) lower than the first measurement value, it is allowable. The glass substrate W is transferred to the fourth vacuum chamber Vc4.

The fourth vacuum chamber Vc4, which is adjacent to the third vacuum chamber Vc3, functions as a vacuum processing chamber of this embodiment, and can implement the film forming method of this embodiment and form an IGZO film on one side of the glass substrate W. . The fourth vacuum chamber Vc is a vacuum pump 41 including a turbo molecular pump, a dry pump, and the like, which can evacuate the inside to a specific pressure (1 × 10 ^-5 Pa). A sputtering cathode 42 is provided on the side wall surface of the fourth vacuum chamber Vc4 so as to face the glass substrate W held by the carrier Tc. Although the sputtering cathode 42 is not specifically illustrated, it is composed of a target 42a and a magnet unit 42b including a sintered body of indium, gallium, and zinc. The target 42a is a slightly cuboid shape having a larger profile than the glass substrate W. In the film formation by sputtering, a copper back plate (not shown) cooled with the target 42a is formed. ) The state of engagement is set. In addition, a plurality of targets 42a may be arranged side by side in the same plane according to the area of the film-forming surface of the glass substrate W. An output from the sputtering power source E is also connected to the target 42a, and specific power can be input. On the other hand, the magnet unit 42b is arranged in a ring shape along the outer periphery of the support plate 421 so as to surround the center magnet 422 provided on one surface of the support plate 421 (yoke) and surround the periphery of the center magnet 422. A peripheral magnet 423 is formed, and a channel-shaped leakage magnetic field (not shown) is formed in the space between the target 42a and the glass substrate W. In this case, for example, in order to improve the utilization efficiency of the target 42a, a driving means (not shown) is connected to the magnet unit 42b, and in the film formation by sputtering, the vertical or horizontal direction At least one direction moves back and forth with a specific stroke.

Further, a gas supply port is provided on a side wall of the fourth vacuum chamber Vc4, and gas pipes 43a and 43b are connected to the gas supply port, respectively. The gas tubes 43a and 43b pass through the mass flow controllers 44a and 44b, respectively, to react with a gas source for a discharge gas composed of a rare gas such as argon, which is omitted from the illustration, and an oxygen-containing gas such as oxygen or ozone. The gas source of the gas is connected, and a rare gas and a reaction gas whose flow rate is controlled can be introduced into the fourth vacuum chamber Vc4. These gas pipes 43a, 43b and mass flow controllers 44a, 44b constitute a gas introduction means within the scope of the patent application. Furthermore, the fourth vacuum chamber Vc4 is also provided with a mass analysis tube 45 as a third measurement means, and the water pressure in the inside can be measured. In this case, when the water pressure measured by the mass analysis tube 45 is within a specific range (1 × 10 ^-5 Pa to 1 × 10 ^-3 Pa), the film formation on the glass substrate W is started. In addition, for example, when the pressure in the fourth vacuum chamber Vc4 is evacuated to a pressure near 1 × 10 ^-5 Pa, the pressure in the fourth vacuum chamber Vc4 can be regarded as the equivalent water pressure. When forming a film in such a pressure range, the mass analysis tube 45 may be omitted, and a vacuum gauge such as an ion vacuum gauge may be used as the third measurement means.

In addition, the vacuum processing device VM has a well-known control unit Cr including a memory, a microcomputer, a sequencer, and the like, and outputs, for example, the measurement values of the mass analysis tubes 23, 33, and 45, or collectively controls mass flow control. Device 44a, 44b, power supply E, and the operation of each vacuum pump 11, 21, 31, 41. In this embodiment, the control unit Cr includes both when the first measurement value measured by the mass analysis tube 23 reaches a specific value and when the second measurement value measured by the mass analysis tube 33 reaches a value lower than the first When the specific value of the 1 measurement value is used, the function of the determination means that allows the glass substrate W to be transported is also used as the vacuum pressure for exhausting the water in the fourth vacuum processing chamber Vc4 to 1 × 10 ^-5 Pa ～ 1 × A specific pressure within a range of 10 ^-3 Pa performs the function of a control means for introducing a rare gas and a reaction gas and inputting electric power to the target 42 a. Hereinafter, a case where the IGZO film is formed by reactive sputtering on one side of the glass substrate W using the vacuum processing device VM will be described as an example to describe a film forming method according to an embodiment of the present invention.

First, in the first vacuum chamber Vc1 in the atmospheric state, the glass substrate W before processing is set on the carrier Tc. When the glass substrate W is set on the carrier Tc, the vacuum pump 11 is operated to evacuate the inside of the first vacuum chamber Vc1. In addition, in the clean room facing the first vacuum chamber Vc1, the temperature is usually controlled at room temperature (for example, 24 ° C) and the humidity is controlled at 40% RH, and water molecules are adsorbed on the exposed clean room. On the carrier Tc or the glass substrate W. In each of the second to fourth vacuum chambers Vc2 to Vc4, the vacuum pumps 21, 31, and 41 are operated to perform vacuum evacuation.

Next, when the pressure in the first vacuum chamber Vc1 reaches a specific value (for example, 40 Pa), the gate valve Gv is opened to transfer the carrier Tc to the second vacuum chamber Vc2 in a state of vacuum exhaust. In the vacuum heating chamber, which is the second vacuum chamber Vc2, the carrier Tc or the glass substrate W is heated to a specific temperature (for example, a temperature in a range of 100 to 120 ° C) by the heating means 22 to remove the water molecules and to separate them. The subsequent water molecules are exhausted by the vacuum pump 21. At this time, the moisture pressure in the second vacuum chamber Vc2 is measured by the mass analysis tube 23, and if the measured moisture pressure (the first measurement value) is lower than a specific value (for example, 1 × 10 ^-2 Pa), the gate valve Gv is opened to The carrier Tc is transported to the third vacuum chamber Vc3 in a state after being evacuated.

Next, in the storage chamber which is the third vacuum chamber Vc3, the carrier Tc and the glass substrate W, in which the water molecules are separated in advance in the vacuum heating chamber Vc2, are stored in a vacuum environment, thereby further evacuating the water molecules in a vacuum. gas. At this time, it is preferable that water molecules be actively adsorbed by the plate surface of the low-temperature plate 32 as an adsorption means. Next, the moisture pressure in the third vacuum chamber Vc3 is measured with the mass analysis tube 33. If the measured moisture pressure (the second measurement value) is lower than a specific value (for example, 5 × 10 ^-3 Pa), the gate valve Gv is opened to The carrier Tc is transported to the fourth vacuum chamber Vc4 in a state after being evacuated, and the glass substrate W is disposed to face the target 42a.

Next, in the vacuum processing chamber, which is the fourth vacuum chamber Vc4, the water pressure inside the tube is measured by the mass analysis tube 45. If the measured water pressure is in the range of 1 × 10 ^-5 Pa to 1 × 10 ^-3 Pa Then, the film formation on the glass substrate W is started. That is, the mass flow controllers 44a and 44b are controlled to respectively introduce the rare gas and the reaction gas at specific flow rates (at this time, the pressure in the vacuum processing chamber Vc4 becomes in the range of 0.1 to 1.0 Pa, and the oxygen partial pressure becomes 0 to 0.05 Pa. In accordance with this, a specific power (for example, a power density of 2 to 5 W / cm ² ) is input from the sputtering power source E to the target 42 a to form a plasma in the vacuum processing chamber Vc4. As a result, the sputtering surface of the target 42a is sputtered, and the reaction products of scattered indium, gallium, and zinc atoms and oxygen adhere to and accumulate on the surface of the glass substrate W to form an IGZO film.

According to this embodiment, by controlling the water pressure in the vacuum processing chamber Vc4 during the film formation of the IGZO film in the range of 1 × 10 ^-5 Pa to 1 × 10 ^-3 Pa, the characteristics and characteristics of the TFT can be obtained. IGZO film with excellent reliability. If the water pressure is lower than 1 × 10 ^-5 Pa, there is a problem that the upward voltage (V _ON ) is shifted to the positive side. On the other hand, when the water pressure is higher than 1 × 10 ^{- 3} Pa, the film density will be low and the majority due to the presence of OH ^- IGZO film defects of the weak coupling, generates electron mobility or reduced ^- or O The problem that the rising voltage (V _ON ) shifts to the positive side.

Furthermore, according to this embodiment, a storage chamber Vc3 is provided on the path where the glass substrate W and the carrier Tc are transported between the vacuum heating chamber Vc2 and the vacuum processing chamber Vc4, and the storage chamber Vc3 is placed in a vacuum In the heating chamber Vc2, the glass substrate W and the carrier Tc after the water molecules are detached are stored in a vacuum environment, and the water molecules are further evacuated. It is not necessary to wait until the water molecules are removed from the glass substrate W and the carrier Tc in the vacuum heating chamber Vc2. The glass substrate W and the carrier Tc can be transported sufficiently, and the glass substrate W and the carrier Tc in a state where the water molecules are further detached in the storage chamber Vc3 can be transported to the vacuum processing chamber Vc4. In addition, processing can be performed in parallel in the vacuum heating chamber Vc2, the storage chamber Vc3, and the vacuum processing chamber Vc4. As a result, the time of vacuum exhaust until the moisture pressure in the vacuum processing chamber Vc4 to be controlled can be shortened, and as much as possible The film formation process is started quickly, and productivity can be improved.

Next, in order to confirm the above effects, the following experiments were performed. In this experiment, first, as the ES-type TFT shown in FIG. 2, a TFT having an IGZO film formed using the above-mentioned vacuum processing device VM as a channel layer (active layer) 53 was manufactured. That is, a chromium film as the gate electrode 51 is formed on one side of the glass substrate 50 by a known method, and then an aluminum oxide film as the gate insulating film 52 is formed on the gate electrode 51 As the processing object W, this processing object W is set on the carrier Tc in the first vacuum chamber Vc1. At this time, the temperature of the clean room facing the first vacuum chamber Vc1 is controlled at 24 ° C, and the humidity is controlled at 40% RH, and water molecules are adsorbed on the processing object and the carrier exposed in the clean room. Tc. Next, if the first vacuum chamber Vc1 is evacuated to 40 Pa, the carrier Tc is transported to the vacuum heating chamber Vc2, and the carrier Tc and the processing object W are heated to 100 ° C by the heating means 22, and Remove water molecules in advance. Next, if the mass spectrometer tube 23 due to the first measurement value is lower than 1 × 10 ^{- 2} Pa, to a position inside the cryopanel Tc transported to the storage chamber will Vc3 32 pair of support. When the second measurement value by the mass analysis tube 33 is lower than 5 × 10 ^-3 Pa, the carrier Tc is transported to a position facing the target 42 a in the vacuum processing chamber Vc 4. When the water pressure measured by the mass analysis tube 45 is in the range of 1 × 10 ^-3 Pa, the film formation of the IGZO film is started. The film formation conditions are set to a pressure of 0.67 Pa in the vacuum processing chamber, and the input power (power density) to the target: 5 W / cm ² . The processed object W after the IGZO film is formed is removed from the carrier Tc, and the IGZO film is patterned to form the channel layer 53. Next, an Es layer (etch stop layer) 54 is formed, and a source electrode 55s and a drain electrode 55d are further formed. Thereafter, a passivation film (protective film) 56 is formed, and thereby the TFT shown in FIG. 2 is manufactured. . In addition, when the water pressure of the vacuum processing chamber Vc4 is 8 × 10 ^-6 Pa, 2 × 10 ^-5 Pa, 1 × 10 ^-4 Pa, 5 × 10 ^-3 Pa, 1 × 10 ^-2 Pa TFTs having the IGZO film were manufactured separately.

The characteristic evaluation of the TFT obtained in this manner was performed based on the rising voltage Von. Referring to FIG. 3, the rising voltage Von is to set the drain voltage Vd to 5V, and measure the drain current Id (A) when the gate voltage Vg is changed within the range of -15V to 20V, and the drain current Id The gate voltage Vg at 1 × 10 ^-9 A. When the rising voltage Von is in the range of 0V to 1V, it is evaluated as a TFT having excellent characteristics and reliability. The relationship between the water pressure in the vacuum processing chamber Vc4 and the rising voltage Von of the TFT is shown in FIG. 4. According to this, it is known that by setting the moisture pressure during the formation of the IGZO film to a range of 1 × 10 ^-5 Pa to 1 × 10 ^-3 Pa, the TFT rising voltage Von can be set to 0V to 1V. Range, a TFT excellent in characteristics and reliability can be obtained.

As mentioned above, although embodiment of this invention was described, this invention is not limited to the said content. In the above-mentioned embodiment, although the case where the conveyance is permitted based on the measurement values of the mass analysis tubes 23 and 33 and the processing is started based on the measurement values of the mass analysis tubes 45 has been described as an example, it is not necessary to provide a mass. Analysis tubes 23, 33, 45. Here, since the environment (temperature, humidity) of the clean room facing the first vacuum chamber Vc1 is controlled to be relatively constant, before the processing target (glass substrate W or carrier Tc) is put into the first vacuum chamber Vc1, As long as the exposure time to the clean room is kept constant (for example, 1 hour), the amount of water adsorbed to each treatment object can be regarded as equal. Therefore, for example, at a point in time after a certain period of time has elapsed since the object to be processed was transferred to the vacuum processing chamber Vc4, the water pressure in the vacuum processing chamber Vc4 can be regarded as a range of 1 × 10 ^-5 Pa to 1 × 10 ^-3 Pa And start specific processing. However, if the time for which the processing object is exposed to the clean room is too short, the amount of water adhering to the processing object becomes too small, and as a result, the water pressure in the vacuum processing chamber Vc4 becomes lower than 1 × 10 ^-5 Pa, and the rising voltage Von of the TFT may become larger than 1V. Therefore, the time for which the processing target is exposed to the clean room is preferably set such that at least a specific amount of moisture will adhere to the processing target. In addition, when the time of exposure to the clean room is short, it is also possible to perform the process of exposing the processing target to an environment equivalent to the clean room for a predetermined time as a pre-process of heating using the heating means 22, According to this, it is possible to manage the amount of water that is adsorbed on the processing object and brought into the vacuum heating chamber Vc2, which is advantageous.

In the above-mentioned embodiment, although a sputtering apparatus for forming an IGZO film by reactive sputtering has been described as an example, a film forming apparatus or an etching apparatus for forming a film by a method other than reactive sputtering is described. The present invention is also applicable.

In the above-mentioned embodiment, although the case where the glass substrate W was conveyed in the state which stood upright was demonstrated as an example, it is good also as a case where the reaction is performed while the glass substrate W is held horizontally. The invention is applicable.

In the above embodiment, the case where the control unit Cr is used as both the determination means and the control means has been described as an example, but the determination means and the control means may be constituted by individual control means.

Also, in the above experiment, although a TFT having an IGZO film as a channel layer was described using an ES-type TFT as an example, as long as the TFT is lifted by controlling the water pressure when the IGZO film is formed, When the voltage Von is set in the range of 0V to 1V, a TFT having excellent characteristics and reliability can be obtained regardless of the structure or manufacturing method of the TFT.

Cr‧‧‧ control unit (judgment means, control means)

E‧‧‧Sputtering Power Supply (Power Supply)

Vc2‧‧‧Second vacuum chamber (vacuum heating chamber)

Vc3‧‧‧The third vacuum chamber (storage room)

Vc4‧‧‧The fourth vacuum chamber (vacuum processing chamber)

VM‧‧‧Vacuum processing device

W‧‧‧ glass substrate (object to be processed)

21‧‧‧The first vacuum pump

22‧‧‧Heating means

23‧‧‧mass analysis tube (first measurement method)

31‧‧‧Second Vacuum Pump

32‧‧‧Low temperature plate (adsorption means)

33‧‧‧mass analysis tube (second measurement method)

41‧‧‧3rd Vacuum Pump

42a‧‧‧Target

43a, 43b‧‧‧‧Gas tube (gas introduction means)

44a, 44b‧‧‧mass flow controller (gas introduction means)

45‧‧‧mass analysis tube (third measurement method)

[FIG. 1] A schematic diagram illustrating a vacuum processing apparatus according to an embodiment of the present invention. [Fig. 2] A schematic view showing a structure of a TFT having an IGZO film formed by a film forming method according to an embodiment of the present invention. [Fig. 3] A diagram illustrating an evaluation method in an experiment for confirming the effect of the present invention. [Fig. 4] is a diagram showing experimental results for confirming the effect of the present invention.

Claims (5)

A film-forming method is to use a sintered body containing indium, gallium, and zinc as a target, and arrange a processing object in a vacuum processing chamber provided with the target. If the vacuum processing chamber is evacuated to a specific pressure, A gas and oxygen for discharge are introduced, and a specific power is applied to the target to sputter the target, thereby forming an IGZO film on the surface of the object to be processed by reactive sputtering. Including, before the sputtering of the target material is started, the water pressure in the vacuum processing chamber is set to a range of 1 × 10 ^-5 Pa to 1 × 10 ^-3 Pa. A vacuum processing apparatus includes a vacuum heating chamber including a first vacuum pump and a heating means, and heating the processing target object by heating means in a state where the first vacuum pump is evacuated by vacuum, and A second vacuum pump is used to separate the water molecules attached to the processing object and the storage chamber. The processed object heated from the vacuum heating chamber is transported in a vacuum environment and evacuated by a second vacuum pump. The processing object is stored and the vacuum processing chamber is equipped with a third vacuum pump. The processing object is transferred from the storage chamber in a vacuum environment, and is evacuated by the third vacuum pump. Specific processing is performed on the processing target. For example, the vacuum processing device in the second scope of the patent application includes a first measurement means for measuring the water pressure in the vacuum heating chamber and a second measurement means for measuring the water pressure in the storage chamber, and further includes a determination means. , When the first measurement value measured by the first measurement means reaches a specific value, and when the second measurement value measured by the second measurement means reaches a specific value lower than the first measurement value, the processing object is allowed Transfer of things. For example, the vacuum processing device of the second or third scope of the patent application, wherein an adsorption means for absorbing water molecules is provided in the aforementioned storage room. For example, the vacuum processing device according to any one of claims 2 to 4 in the scope of patent application, wherein the vacuum processing chamber is provided with a target including a sintered body of indium, gallium, and zinc, and Power supply, gas introduction means for introducing discharge gas and oxygen separately, and a third measurement means for measuring the moisture pressure in the vacuum processing chamber, and equipped with a vacuum exhaust to 1 × 10 ^-5 Pa if the moisture pressure in the vacuum processing chamber A specific pressure in the range of 1 × 10 ^-3 Pa is a means for controlling the introduction of gas and oxygen for discharge and the power input to the target.