JP2015101768A - Film deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of completing a deposition process of a work-piece within a short time.SOLUTION: A film deposition apparatus comprises a spare chamber 1, a gate valve 5, a film deposition chamber 2, a gate valve 6 and a shipping chamber 3. In the spare chamber 1, there is arranged a partial pressure measuring device for measuring either the partial pressure of oxygen or the partial pressure of moisture content in the spare chamber 1. A carrier mechanism 25 carries a work W from the spare chamber 1 to the film deposition chamber 2 when either the partial pressure of oxygen or the partial pressure of moisture in the spare chamber 1 becomes a preset value or less.

Description

  The present invention relates to a film forming apparatus for forming a metal thin film on a workpiece by PVD (Physical Vapor Deposition) film formation such as sputtering film formation.

  For example, injection molded resin products are used for reflectors and instruments for automobile headlamps. For these resin products, film formation by sputtering using a metal such as aluminum as a target is performed for the purpose of providing a mirror finish or a metallic texture.

  In addition, after the film formation by sputtering, a silicon oxide protective film or the like is formed by plasma CVD for mechanical protection (scratch prevention) or chemical protection (oxidation / corrosion prevention) of the metal film. That is, the workpiece after film formation by sputtering is transferred to another film formation apparatus, and plasma CVD using a monomer gas such as HMDSO (hexa-methyl-di-siloxane) is performed in the chamber of the film formation apparatus. Thus, a protective film is formed on the surface after the film formation by sputtering.

  An apparatus that performs film formation by sputtering and composite film formation or polymerization film formation in the same chamber has also been proposed. Patent Document 1 discloses a film forming apparatus in which a sputtering electrode and a composite film forming or polymerization film forming electrode are arranged at positions separated by a predetermined distance. In this film forming apparatus, first, a work and a sputtering electrode are arranged to face each other, and after introducing an inert gas into the chamber, direct current is applied to the sputtering electrode to perform film formation by sputtering. Next, the workpiece is moved so that the workpiece and the electrode for composite film formation or polymerization film formation are opposed to each other, and a monomer gas such as HMDSO is introduced into the chamber, and then a high frequency is applied to the electrode for composite film formation or polymerization film formation. A voltage is applied to perform composite film formation or polymerization film formation. The film forming apparatus described in Patent Document 1 has a configuration in which a shutter is arranged on a target that is not used.

JP 2011-58048 A

At the time of film formation on such a resin work, it is preferable to form the work that is sent out from the injection molding machine at a constant interval in a manner linked with the work production cycle of the injection molding machine. However, in the conventional film forming apparatus, unless the pressure in the chamber before film formation is reduced to a high vacuum pressure of about 10 ⁻³ Pa (Pascal), the reflectivity of the surface of the workpiece after sputtering decreases. Or a phenomenon called yellowing occurs. For this reason, there existed a problem that decompression required a long time. It has been found by the inventor of the present invention that such a problem is mainly due to the influence of oxygen or moisture in the chamber.

FIG. 4 is a graph showing the partial pressure of argon (Ar) and moisture (H ₂ O) when film formation by sputtering is performed with the pressure in the chamber being as low as about 0.9 Pa, and FIG. It is a graph which shows the spectral reflectance of the aluminum thin film formed into a film by it. FIG. 6 is a graph showing the partial pressure of argon (Ar) and moisture (H ₂ O) when film formation by sputtering is performed with a high vacuum of about 10 ⁻³ Pa in the chamber. 7 is a graph showing the spectral reflectance of the aluminum thin film formed thereby. Here, the horizontal axis of FIGS. 4 and 6 represents time, and the vertical axis represents partial pressure (Pa) proportional to the pressure in the chamber. 5 and 7, the horizontal axis indicates the wavelength (nm), and the vertical axis indicates the reflectance (%). Further, the symbol T in FIGS. 4 and 6 indicates the time when the film formation by sputtering is actually executed.

As shown in FIG. 4, when the film formation by sputtering is performed with the background pressure before film formation in the chamber being as low as about 0.9 Pa, and the background before film formation in the chamber is shown in FIG. When the pressure is set to a high vacuum of about 10 ⁻³ Pa, there is no significant difference in the partial pressure of argon, but the partial pressure of moisture is about one-tenth at the time of low vacuum at the time of high vacuum. This indicates that the partial pressure of water greatly changes depending on the degree of decompression.

Here, when film formation by sputtering is performed under a low vacuum of about 0.9 Pa, the reflectance on the short wavelength side with respect to the aluminum thin film is particularly low, as shown in FIG. As a result, a phenomenon called yellowing occurs in which the surface of the aluminum thin film appears yellowish. On the other hand, when film formation by sputtering is performed under a high vacuum of about 10 ⁻³ Pa, it is possible to maintain a high reflectance with respect to the aluminum thin film. For this reason, in order to obtain a high reflectance at the time of film formation by sputtering, it can be understood that the partial pressure of moisture in the chamber needs to be reduced. The same concept can be applied to the partial pressure of oxygen having an oxidizing action during film formation by sputtering.

  Accordingly, the present invention has been made based on such knowledge, and an object thereof is to provide a film forming apparatus capable of completing a film forming process on a workpiece in a short time.

  In the first invention, a film forming apparatus for forming a metal thin film on a workpiece by PVD, the film forming chamber, a film forming chamber pressure reducing means for reducing the pressure of the film forming chamber, and the film forming chamber A spare chamber connected via a gate valve, a spare chamber decompression means for decompressing the spare chamber, a measuring means for measuring the degree of vacuum in the spare chamber or a partial pressure of oxygen or moisture, and the spare chamber A work transport mechanism for transporting the work to the film forming chamber; and when the degree of vacuum by the measuring means or the partial pressure of oxygen or moisture becomes a set value or less, the work transport mechanism removes the work from the preliminary chamber. And a controller that transports the film formation chamber.

  In the second invention, a heating means for heating the inside of the preliminary chamber and / or a dehumidifying means for dehumidifying the inside of the preliminary chamber are provided.

  In the third invention, the preliminary chamber decompression unit decompresses the preliminary chamber to a degree of vacuum higher than the degree of vacuum of the film formation chamber decompressed by the film formation chamber decompression unit.

  According to a fourth aspect of the invention, there is provided a carry-out chamber connected to the film forming chamber via a gate valve, and a carry-out chamber decompression unit that depressurizes the carry-out chamber.

  According to a fifth aspect of the present invention, a resin workpiece including a sputtering electrode having a target material disposed in the film formation chamber, and an inert gas supply unit that supplies an inert gas into the film formation chamber. The film is formed by sputtering.

  In a sixth aspect of the present invention, the target material is covered by coming into contact with the sputtering electrode, a CVD electrode disposed in the deposition chamber, a source gas supply unit for supplying a source gas into the deposition chamber, and the sputtering electrode. A shutter that is movable between a contact position and a retreat position that is separated from the sputtering electrode is provided, and film formation by plasma CVD is performed on a workpiece after film formation by sputtering.

  According to the first invention, since the work is transferred from the preliminary chamber to the film forming chamber after the degree of vacuum in the preliminary chamber or the partial pressure of oxygen or moisture is lower than the set value, the oxygen in the film forming chamber is The partial pressure of water or the partial pressure of moisture can be controlled below a certain level, and even in a low vacuum state, the PVD film forming process can be performed on the workpiece in a short time while maintaining the high reflectance of the metal thin film. It becomes possible to do.

  According to the second invention, by heating and / or dehumidifying the inside of the preliminary chamber, the partial pressure of oxygen or the partial pressure of water in the preliminary chamber can be efficiently reduced in a shorter time. .

  According to the third invention, since the preliminary chamber is depressurized to a degree of vacuum higher than the degree of vacuum of the film formation chamber, the degree of vacuum of the film formation chamber at the start of film formation can be maintained high, and film formation The process can be completed in a short time.

  According to the fourth invention, by using the decompressed unloading chamber, it is possible to prevent the vacuum degree of the film forming chamber from being lowered even when the work is unloaded.

  According to the fifth invention, since film formation is performed by sputtering, high-speed film formation is possible with a relatively low vacuum, and a metal thin film with high quality and high reflectance is formed with a short film thickness distribution with a short tact time. It becomes possible to do. Moreover, not only a single metal but also an alloy film can be easily formed.

  According to the sixth aspect, film formation by sputtering and film formation by plasma CVD can be continuously performed in a short time in the same chamber.

1 is a schematic diagram of a film forming apparatus according to the present invention. 2 is a schematic diagram of a preliminary chamber 1. FIG. It is a block diagram which shows the control system of the film-forming apparatus which concerns on this invention. Is a graph showing the partial pressure and water (H 2 _O) of argon (Ar) when executing film formation by sputtering background pressure in the chamber as a low vacuum of about 0.9 Pa. It is a graph which shows the spectral reflectance of an aluminum thin film. Is a graph showing the partial pressure and water (H 2 _O) of argon (Ar) when executing film formation by sputtering background pressure in the chamber as a high vacuum of about 10 -3 ^Pa. It is a graph which shows the spectral reflectance of an aluminum thin film.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic view of a film forming apparatus according to the present invention.

  A film forming apparatus according to the present invention performs film formation by sputtering and film formation by plasma CVD on an injection-molded resin workpiece W. A preliminary chamber 1, a film formation chamber 2, A carry-out chamber 3 is provided. The preliminary chamber 1 and the film forming chamber 2 are connected via a gate valve 5 and a packing 36. The film forming chamber 2 and the carry-out chamber 3 are connected via a packing 37 and a gate valve 6.

  The workpiece W is carried into the spare chamber 1 by a transport mechanism (not shown) with the shutter 4 in the spare chamber 1 being opened. After the preliminary chamber 1 is sufficiently evacuated, the workpiece W is transferred from the preliminary chamber 1 to the film forming chamber 2 by the transfer mechanism 25. Further, after the film formation, the workpiece W is transferred from the transfer mechanism 25 to the transfer mechanism 26 by a transfer mechanism (not shown), and is transferred from the film formation chamber 2 to the unload chamber 3 by the transfer mechanism 26. Further, the workpiece W is unloaded from the unloading chamber 3 by a transfer mechanism (not shown) in a state where the shutter 7 of the unloading chamber 3 is opened.

  The preliminary chamber 1 is connected to a turbo molecular pump 16 via an on-off valve 15, and this turbo molecular pump 16 is connected to an auxiliary pump 17 such as a rotary pump. The turbo molecular pump 16 and the auxiliary pump 17 function as a prechamber depressurizing means for depressurizing the prechamber 1.

  FIG. 2 is a schematic diagram of the preliminary chamber 1.

  The preliminary chamber 1 includes a stage 13 including a heater 14 such as a rubber, carbon ceramic, an infrared heater, a dehumidifying member 12 such as a molecular sieve, and a partial pressure measuring device 11. This partial pressure measuring instrument 11 measures the partial pressure of oxygen or moisture in the preliminary chamber 1, and includes a Q-mass analyzer (quadrupole mass spectrometer), an infrared absorption detector, and the like. Can be used. The workpiece W is carried into the preliminary chamber 1 with the shutter 4 being opened, and is carried from the preliminary chamber 1 into the film forming chamber 2 through the gate valve 5.

  Referring again to FIG. 1, the film forming chamber 2 includes a sputter electrode 23 composed of an electrode portion 21 and a target material 22. As the target material 22, aluminum or an aluminum alloy is used. The sputter electrode 23 is attached to the film forming chamber 2 via an insulating member (not shown). Further, the film forming chamber 2 is grounded by the grounding portion 27. The sputter electrode 23 is connected to a DC power source 33. As the DC power source 33, one that can apply a DC voltage to the sputtering electrode 23 is used so that the input power is 25 watts or more per square centimeter with respect to the surface area of the target material 22. That is, the DC power source 33 inputs 25 watts or more per square centimeter as the input power to the sputtering electrode 23 with respect to the surface area of the target material 22.

  The film formation chamber 2 includes a CVD electrode 24. Similar to the sputter electrode 23, the CVD electrode 24 is mounted on the film forming chamber 2 via an insulating member (not shown). The CVD electrode 24 is connected to a high frequency power supply 34 through a matching box 35. As the high-frequency power source 34, for example, a power source that generates a high frequency of about several tens of MHz (megahertz) can be used. Here, the high frequency described in this specification means a frequency of 20 kHz (kilohertz) or more.

  The film forming chamber 2 is connected to an inert gas supply unit 53 such as argon via an on-off valve 51 and a flow rate adjusting valve 52. The film forming chamber 2 is connected to a source gas supply unit 56 such as HMDS or HMDS (hexa-methyl-di-silazane) through an on-off valve 54 and a flow rate adjustment valve 55. Further, the film forming chamber 2 is connected to a turbo molecular pump 42 via an on-off valve 41, and this turbo molecular pump 42 is connected to an auxiliary pump 43 such as a rotary pump.

  As the turbo molecular pump 16 in the preliminary chamber 1 and the turbo molecular pump 42 in the film forming chamber 2 described above, those having a maximum exhaust speed of 300 liters per second or more are used. When the turbo molecular pump 37 is used, the pump itself can be reduced in size while obtaining a large exhaust speed. For this reason, the film forming apparatus itself can be miniaturized.

  Further, the film formation chamber 2 has a contact position that covers the target material 22 by contacting the sputter electrode 23 as shown by a virtual line in FIG. 1 and a film formation chamber 2 as shown by a solid line in FIG. A shutter 28 that can be moved up and down by driving the air cylinder 32 is provided between the retreat position supported by the support portion 31 in the vicinity of the bottom portion. The shutter 28 is made of a material that is a conductor such as metal and is non-magnetic. As a material of the shutter 28, for example, aluminum can be adopted.

  The carry-out chamber 3 is connected to a turbo molecular pump 42 in the film forming chamber 2 through an on-off valve 44. The turbo molecular pump 42 and the auxiliary pump 43 function as film forming chamber pressure reducing means for reducing the pressure of the film forming chamber 2 and also functioning as discharge chamber pressure reducing means for reducing the pressure of the discharge chamber 3. Note that the open / close valve 41 is opened when the film forming chamber 2 is decompressed, and the open / close valve 44 is opened when the carry-out chamber 3 is decompressed. The unloading chamber 3 may be decompressed when the on-off valve 41 is closed in order to perform the film forming operation in the film forming chamber 2.

  FIG. 3 is a block diagram showing a control system of the film forming apparatus according to the present invention.

  The film forming apparatus includes a CPU that executes logical operations, a ROM that stores an operation program necessary for controlling the apparatus, a RAM that temporarily stores data during control, and the like, and a control unit that controls the entire apparatus. 70. The controller 70 is connected to the partial pressure measuring instrument 11 disposed in the preliminary chamber 1. The control unit 70 includes a transport mechanism drive unit 71 that controls the transport mechanisms 25 and 26 shown in FIG. 1, and an on-off valve drive unit 72 that controls the on-off valves 15, 41, 44, 51, and 54 Also connected to a gate valve driving unit 73 for controlling the opening and closing of the gate valves 5 and 6, an electrode driving unit 74 for controlling the driving of the sputtering electrode 23 and the CVD electrode 24, and a shutter driving unit 75 for controlling the opening and closing of the shutters 4, 7, and 28. Has been.

  Next, a film forming operation by the film forming apparatus having the above configuration will be described. When a film forming operation is performed by this film forming apparatus, the injection-molded work W is sequentially transferred to the preliminary chamber 1, the film forming chamber 2, and the carry-out chamber 3, and the film forming process is executed.

When a film forming operation is performed by this film forming apparatus, first, the pressure in the preliminary chamber 1 is set to a high vacuum of 10 ⁻³ Pa or less by the action of the turbo molecular pump 16 and the auxiliary pump 17. Further, the inside of the preliminary chamber 1 is heated through the stage 13 by the action of the heater 14 and the inside of the preliminary chamber 1 is dehumidified by the action of the dehumidifying member 12. At this time, the gate valves 5 and 6 are closed. Further, the inside of the film forming chamber 2 and the carry-out chamber 3 are depressurized to a low vacuum of less than 1 Pa by the action of the turbo molecular pump 42 and the auxiliary pump 43. Note that the depressurization of the film forming chamber 2 and the unloading chamber 3 may be completed before the workpiece W is loaded therein.

  In this state, the workpiece W that has been injection-molded is transported from the injection molding machine and carried into the preliminary chamber 1. At this time, it is preferable that a large number of workpieces W are carried into the spare chamber 1 and stocked in the spare chamber 1. Then, with the shutter 4 and the gate valve 5 closed, the partial pressure measuring device 11 measures the partial pressure of oxygen or the partial pressure of moisture in the preliminary chamber 1. Note that whether to measure the partial pressure of oxygen or the partial pressure of water may be appropriately selected depending on the type of the metal thin film. Further, both the partial pressure of oxygen and the partial pressure of moisture may be measured.

  In the preliminary chamber 1, the inside of the preliminary chamber 1 is heated by the action of the heater 14 and the inside of the preliminary chamber 1 is dehumidified by the action of the dehumidifying member 12. It becomes possible to quickly reduce the partial pressure or the partial pressure of moisture. Although it is possible to reduce the partial pressure of oxygen or moisture in the preliminary chamber 1 by using a vacuum pump having a high exhaust speed, in this case, the apparatus configuration is not only increased in size. In some cases, the adiabatic expansion causes condensation in the inside of the preliminary chamber 1 or the workpiece W, and a desired film quality cannot be obtained for the metal thin film.

  The oxygen partial pressure or moisture partial pressure in the preliminary chamber 1 measured by the partial pressure measuring device 11 is less than the set value, and the film forming chamber 2 is depressurized from 0.1 Pa to a low vacuum of less than 1 Pa. For example, the gate valve 5 is opened, and the workpiece W is transferred from the preliminary chamber 1 to the film forming chamber 2 by the transfer mechanism 25. At this time, since the inside of the preliminary chamber 1 is sufficiently depressurized and the partial pressure of oxygen or the water is equal to or lower than the set value, the inside of the film forming chamber 2 is also depressurized as it is, and further, film formation is performed. The partial pressure of oxygen or the partial pressure of moisture in the chamber 2 becomes a set value or less.

  In this state, by opening the on-off valve 51, an inert gas such as argon is supplied from the inert gas supply unit 53 into the film forming chamber 2, and the degree of vacuum in the film forming chamber 2 is 0.5 to 0.5. The inside of the film forming chamber 2 is filled with an inert gas so as to be 3 Pa. Further, as indicated by phantom lines in FIG. 1, the workpiece W transferred by the transfer mechanism 26 is disposed at a position facing the sputtering electrode 23 in the film forming chamber 2. A DC voltage is applied to the sputter electrode 23 from the DC power source 33. Thereby, a thin film of the target material 22 made of aluminum is formed on the surface of the workpiece W by a sputtering phenomenon.

  In this sputtering step, a DC voltage is applied from the DC power source 33 to the sputtering electrode 23 so that the input power is 25 watts or more per square centimeter relative to the surface area of the target material 22 in the sputtering electrode 23. Thereby, even if the inside of the film forming chamber 2 is in a low vacuum, a thin film made of the target material 22 is suitably formed on the surface of the resin workpiece W. That is, when performing film formation with aluminum on a resin workpiece W, it is possible to suitably form a thin film having high reflectivity and high adhesion without causing yellowing. It becomes possible.

  When film formation by sputtering is completed by the above steps, film formation by plasma polymerization is subsequently executed. This plasma polymerization is a kind of plasma CVD (Chemical Vapor Deposition). When performing plasma polymerization, as shown by a solid line in FIG. 1, the workpiece W transferred by the transfer mechanism 25 is disposed at a position facing the CVD electrode 24 in the film forming chamber 2. Further, as indicated by a virtual line in FIG. 1, the shutter 28 is disposed at a contact position that covers the target material 22 by contacting the sputter electrode 23. In this state, the cylinder rod of the air cylinder 32 is in a contracted state housed in the main body of the air cylinder 32 as shown in FIG.

  In this state, by opening the on-off valve 54, the source gas is supplied from the source gas supply unit 56 into the film forming chamber 2, so that the degree of vacuum in the film forming chamber 2 is 0.1 to 10 Pa. The inside of the film forming chamber 2 is filled with the source gas. Then, a high-frequency voltage is applied to the CVD electrode 24 from the high-frequency power source 34 via the matching box 35 to perform film formation by plasma polymerization. Thereby, a thin film of the source gas is deposited on the surface of the workpiece W by the plasma polymerization reaction.

  When film formation by plasma polymerization is completed, the gate valve 6 is opened, and the work W after film formation is transferred from the film formation chamber 2 to the carry-out chamber 3 by the transfer mechanisms 25 and 26. At this time, since the inside of the carry-out chamber 3 is depressurized from 0.1 Pa to a low vacuum of less than 1 Pa by the action of the turbo molecular pump 42 and the auxiliary pump 43, the pressure in the film forming chamber 2 is not increased. Absent. When the workpiece W is stored in the carry-out chamber 3, the gate valve 6 is closed. Thereafter, the shutter 7 is opened, and the workpiece W after film formation is carried out of the film formation apparatus.

  At the same time, film formation for the next workpiece W is executed in the film formation chamber 2. Further, while film formation is being performed by the film formation chamber 2, the shutter 7 is closed and the inside of the carry-out chamber 3 is decompressed. By repeating such an operation, it is possible to perform film formation while keeping the partial pressure of oxygen or moisture in the film formation chamber 2 low. For this reason, a metal strip having a high reflectance can be formed even under a low vacuum pressure, and the time required for film formation can be shortened.

  In the above-described embodiment, the case where the present invention is applied to a film forming apparatus that continuously executes film formation by sputtering and film formation by plasma CVD in the same film formation chamber 2 has been described. You may apply this invention to the film-forming apparatus which performs only the film-forming by sputtering.

  In the above-described embodiment, film formation by sputtering, which is a kind of PVD film formation, is employed, but the present invention may be applied to a film formation apparatus that performs PVD film formation other than sputtering.

Instead of measuring the partial pressure of oxygen or moisture in the preliminary chamber 1 with the partial pressure measuring instrument 11, a vacuum measuring instrument for measuring the degree of vacuum in the preliminary chamber 1 is provided and measured by the vacuum measuring instrument. If the degree of vacuum in the preliminary chamber 1 becomes a set value or less (high vacuum of 10 ⁻³ or less) and the pressure in the film forming chamber 2 is reduced from 0.1 Pa to a low vacuum of less than 1 Pa, the gate valve 5 is turned on. The workpiece W may be opened from the preliminary chamber 1 to the film forming chamber 2 by the transfer mechanism 25.

DESCRIPTION OF SYMBOLS 1 Preliminary chamber 2 Deposition chamber 3 Unloading chamber 4 Shutter 5 Gate valve 6 Gate valve 7 Shutter 11 Partial pressure measuring device 12 Dehumidification member 14 Heater 15 On-off valve 16 Turbo molecular pump 17 Auxiliary pump 21 Electrode part 22 Target material 23 Sputter electrode Reference Signs List 24 CVD electrode 25 Transport mechanism 26 Transport mechanism 28 Shutter 32 Air cylinder 33 DC power supply 34 High frequency power supply 35 Matching box 41 Open / close valve 42 Turbo molecular pump 43 Auxiliary pump 44 Open / close valve 51 Open / close valve 52 Flow rate adjusting valve 53 Inert gas supply unit 54 Open / Close Valve 55 Flow Control Valve 56 Source Gas Supply Unit 70 Control Unit 71 Transfer Mechanism Drive Unit 72 Open / Close Valve Drive Unit 73 Gate Valve Drive Unit 74 Electrode Drive Unit 75 Shutter Drive Unit W Work

Claims (6)

A film forming apparatus for forming a metal thin film on a workpiece by PVD,
A deposition chamber;
A film forming chamber pressure reducing means for reducing the pressure of the film forming chamber;
A preliminary chamber connected to the deposition chamber via a gate valve;
A prechamber depressurizing means for depressurizing the prechamber;
Measuring means for measuring the degree of vacuum or the partial pressure of oxygen or moisture in the preliminary chamber;
A workpiece transfer mechanism for transferring a workpiece from the preliminary chamber to the film forming chamber;
When the degree of vacuum by the measuring means or the partial pressure of oxygen or moisture is equal to or lower than a set value, a control unit that transports the work from the preliminary chamber to the film forming chamber by the work transport mechanism;
A film forming apparatus comprising: The film forming apparatus according to claim 1,
A film forming apparatus comprising heating means for heating the inside of the preliminary chamber and / or dehumidifying means for dehumidifying the inside of the preliminary chamber. In the film-forming apparatus of Claim 1 or Claim 2,
The preliminary chamber decompression unit is a film forming apparatus that decompresses the preliminary chamber to a degree of vacuum higher than a degree of vacuum of the film formation chamber depressurized by the film formation chamber decompression unit. In the film-forming apparatus in any one of Claims 1-3,
An unloading chamber connected to the film forming chamber via a gate valve;
Unloading chamber decompression means for depressurizing the unloading chamber;
A film forming apparatus comprising: In the film-forming apparatus in any one of Claims 1-4,
A sputter electrode having a target material disposed in the film formation chamber;
An inert gas supply unit for supplying an inert gas into the film forming chamber,
A film forming apparatus that performs film formation on a resin workpiece by sputtering. In the film-forming apparatus in any one of Claims 1-5,
A CVD electrode disposed in the film forming chamber;
A source gas supply unit for supplying source gas into the film forming chamber;
A shutter that is movable between a contact position that covers the target material by contacting the sputter electrode and a retreat position that is separated from the sputter electrode;
With
A film forming apparatus for performing film formation by plasma CVD on a workpiece after film formation by sputtering.

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