WO1998001898A1 - Rie apparatus - Google Patents

Rie apparatus Download PDF

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Publication number
WO1998001898A1
WO1998001898A1 PCT/JP1997/002326 JP9702326W WO9801898A1 WO 1998001898 A1 WO1998001898 A1 WO 1998001898A1 JP 9702326 W JP9702326 W JP 9702326W WO 9801898 A1 WO9801898 A1 WO 9801898A1
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WIPO (PCT)
Prior art keywords
chamber
means
processing chamber
object
processed
Prior art date
Application number
PCT/JP1997/002326
Other languages
French (fr)
Japanese (ja)
Inventor
Tadahiro Ohmi
Takahisa Nitta
Original Assignee
Kabushiki Kaisha Ultraclean Technology Research Institute
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Publication date
Priority to JP17529696 priority Critical
Priority to JP8/175296 priority
Application filed by Kabushiki Kaisha Ultraclean Technology Research Institute filed Critical Kabushiki Kaisha Ultraclean Technology Research Institute
Publication of WO1998001898A1 publication Critical patent/WO1998001898A1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching

Abstract

A reactive ion etching (RIE) apparatus which has an etching chamber in which O2 and H2O do not exist or into which O2 and H2O are not brought and, further, in which oxygen ions do not exist when a plasma is generated. The etching selection ratio of an object to be treated against resist is determined. A loading chamber (102) into which an object (101) is introduced is connected to the treatment chamber (103) in which the object (102) is etched through a first opening/closing means (104). At least the outermost surfaces of metal contamination preventing means (105) which is provided along the inner walls of the treatment chamber (103), sputtering preventing means (106) which is provided along electrodes in the treatment chamber (103) or/and the inner wall of the treatment chamber (103) are made of material which does not contain oxygen atoms.

Description

Specification

RIE apparatus TECHNICAL FIELD

The present invention relates to a RIE apparatus. More specifically, the etching selection ratio of the object to be processed is about high RIE apparatus to the resist. BACKGROUND

Conventional methods for micromachining the target object to be ί 弋表 the semiconductor substrate is roughly as follows der

■.

First, after applying the registry Bok him processed to heat the object to be processed. Then, - after transferring the pattern onto the object to be processed by using a Sutetsupa, to perform development-heat drying. Further, by introducing a workpiece to RIE (React ive Ion Etching) apparatus, to etch the necessary area. However, improved semiconductor degree of integration, for example, K r ​​F excimer laser exposure apparatus used so that levels (design rules:.. 0 2~0 3 m) or less of As the microfabrication is required, various it has arisen problems.

In RIE, a region rests the resist is not etched at all, it is necessary to selectively etch only the no resist areas. However, the resist and the material of his processed to be etched, for example, selectivity to the S i 0 2 and BPSG used as an interlayer insulating film (Borophosphosi l icate Glass) there is a problem that not enough taken.

Conventionally, as the countermeasure include a method forces to ensure sufficient thickness of Regis Bok a. More this, even Regis Bok is etched, the material of the base material or the object to be processed in the register I can be prevented from being etched by exposure to blanking plasma.

However, in order to further improve the semiconductor integration, it is Rukoto an excimer laser scan Tetsu path is becoming mandatory. Compared to the conventional, the focal depth of an excimer laser stearyl flange is very shallow (0. 5~0. 7 im) becomes Therefore, the resist film thickness also it becomes necessary to thin to a thickness comparable. When the thickness of Tokoro force \ resist film thickness, as described above, selectivity between Regis Bok and Hisho management of materials (e.g. S i 0 2) can not be sufficiently ensured. Therefore, in the situations where it is difficult to introduce a Ekishimare Zasutetsupa. That is, a problem that can not be further fine processing is being actualized.

Incidentally, as is clear from Atsushingu technique utilizing oxygen plasma, the resist force off: To avoid being etched by plasma is no treatment chamber 0 9 or H 9 0 to etching processing, or, brought no further oxygen atom at the plasma generation yo if not to exist in the processing chamber L,.

Figure 5 shows a schematic diagram of a current RIE apparatus. 5, 5 0 1 workpiece, 5 0 2 load chamber for introducing the object to be processed 5 0 1 5 0 3 workpiece 5 0 1 a treatment chamber for etching, 5 0 4 first switching means, 5 0 5 metal contamination prevention means, 5 0 6 sputtering preventing hand stage, 5 0 7 lower electrode, 5 0 8 upper electrode, 5 0 9 matcher, 5 1 0 high frequency power, 5 1 1 means for cooling the object to be processed 5 0 1 via the lower electrode 5 0 7 5 1 2 insulator, .5 1 3 5 1 4 evacuation unit 5 1 5 5 1 6 is a gas supply means.

¾ management chamber 5 0 3 is made of aluminum two ©-time base metal, has a Arumai door process on its inner wall surface. Two electrodes 5 0 7 5 0 8 around, and the inner wall of the processing chamber 5 0 3, respectively A 1. 〇 3 ceramic, and, with a shield made of quartz (S i 0 2)? Are we 1. The gas supply means 5 1 [delta] to supply a predetermined gas into the processing chamber 5 0 3, the lower electrode 5 0 7 1 3. 5 6 ΜΗ by introducing a high frequency power of zeta, was occurring plasma. For example, 'high frequency power 2 0 0 W, the pressure 3 0 m T orr, as the gas was C. Load chamber 5 0 2, S i ©

Only use out of the specimen 5 0 1 consisting of E c, such as heat treatment was not performed. Workpiece 5 0 1 prior to introduction into the load chamber 5 0 2 conveyed through the clean room while exposing its surface, was allowed to storage. Gate valves used as the first switching means 5 0 4 was heated by a heating means such as a heater from the outside.

And power, and, in the apparatus of the present situation described above (FIG. 5), there are problems as described below.

(1) Water problem adsorbed onto an object to be etched

Even went well cleaning of the object, only exposing the workpiece to the clean room air, moisture 3 x 1 0 16 molecules / cm will adsorbed on the surface of the object to be processed. When the target object is considered the case of 2 0 Uweha substrate O mm 0, so that the 1. 9 x 〖0. nineteen moisture is incorporated have in the device.

(2) 0 generated from the composition in the interior of the processing chamber 2 and H 2 0 in question

Material to generate a device 0 7 and H 9 0 also inside is widely used. As those containing H 9 0 and 0 2 in constructs a device within, for example, in order to prevent the packs of stage for placing order, the target object to protect the workpiece from metal contamination , quartz being used (S i 0 9) or ceramic (a 1.0) are mentioned for the purpose of. When quartz or ceramics are sputtered at bra Zuma, to release oxygen atom (0) which is a constituent element, resist and adversely affects the selectivity of the object to be processed (e.g., S i O).

(3) generated from the inner wall of the processing chamber 0 2 and H 2 0 in question

¾a when using aluminum alloy as a material constituting the inner wall of the sense chamber, often it is subjected to Arumai preparative treatment to the surface of the treatment chamber. When subjected to Arumai preparative process, components of the processing chamber surfaces becomes Ri 〇 A 1 θ ο · n H. By this surface is sputter evening in plasma, thus being discharged into the processing chamber (^ and H 0.

(4) H 9 0 and organic problems arising from the resist provided on the target object

Registry itself contains an H 9 0 or an organic solvent. And dissolved resist, Ebaechi Reserufasete Ichito (ECA: Ethlcersolbacetate) of but a boiling point of 1 5, II light Boss Bok bake after development line at lower 1 3 0 ° C the current We have, H 9_Rei and organic solvent would remain large amount resist therein. The residual H 9 〇 or organic matter, have significant influence on the etching process.

However, when the post-baking temperature is raised to 1 3 (or TC, the resist becomes the Kaba 鋅形 shape, forming a precise pattern becomes difficult.

(5) 0 2 H 9 0 problems arising from the material of the object to be etched

Material of the workpiece to be etched, for example, when Etsu quenching the S i 0 9 film used as an interlayer insulating film, as is clear from the component, 0 2 is produced. Since this occurs during the plasma 〇 9 can not be effectively evacuated, it is a factor of selection ratio degradation.

(6) in order to remove moisture adsorbed to the inner wall of the 0 2 and H 9 0 issue processing chamber for generating the closing means provided such between the processing chamber and the load chamber, usually the entire RIE apparatus heating

It is performed (baking). However, for example, for the processing chamber and separated one by which opening and closing means between the load chamber (Kiyoshie If gate valve) can not ίτ Ukoto baking reasons its structure, Eta 9 0 generation cause has become a. The plasma by despite the temperature of the inner wall of the chamber has risen, the temperature of the vicinity of the gate valve is attached because the remains room temperature, the reaction by-products gate valve, particle generation caused or gate bus, It has been a cause of failure of lube.

The present invention is not processing 0 2 and Eta 2 0 into the room to be etched exist, or is not brought further oxygen atom at the plasma generation is not present in the process chamber, and an object thereof is to provide an RIE apparatus. Disclosure of the Invention

5 RIE apparatus of the present invention, a processing chamber for etching the workpiece and load chamber for introducing the object to be processed is in the RIE apparatus which are connected via a first switching means, said processing chamber metal contamination prevention means provided along the inner wall, said processing sputter evening preventing means provided along the interior of the electrode, or / and the inner wall of the processing chamber is a material in which at least the outermost surface contains no oxygen atom the features.

Ten

Action

The following description with respect to the action of the claims Ru ί system in the present invention. .

In the invention according to claim 1, metal contamination prevention means provided along the inner wall of the processing chamber, a sputter preventing means is provided along the electrode in the processing chamber, or / and the inner wall of the processing chamber is not as small both the fact that the material outermost surface does not contain oxygen atoms, metal contamination prevention means, spa jitter preventing means, or Roh and, from the inner wall of the processing chamber, in the occurrence plasma in the processing chamber for etching process 0 to be mixed. It is possible to reduce the amount of and Η than zero. Consequently, RIE device is obtained having a 傻 selection ratio.

In the invention according to claim 2, because there was 20 of a material in which the fluorinated passivation treatment on the inner wall surface of the processing chamber, generated from the inner wall of the processing chamber 0. And H. 0 can be reduced.

In the invention according to claim 3, at least an oxygen atom and not containing gas atmosphere, the pretreatment chamber subjected to UV Kyua processing and heat treatment against registry provided on the target object is a second opening closed because it is Se' to the load chamber through the means, it can be reduced registry,及beauty, 0 2 and H 2 0 produced from material of the object to be etched which is provided on the target object . 25 In ί Cale invention in claim 4, since the first or Ζ and said second switching means has a built-in heating mechanism, substantial amount of reaction by-products generated in the plasma adhere to the opening and closing means It decreases to. As a result, generation of particles can be suppressed, and the failure of the switching means can be avoided. In the invention according to claim 5, wherein the load chamber or and the processing chamber, wherein by having a means for heating the object to be processed, before etching the workpiece, from his processed o 2 and 30 Eta 9 0 can remove, also Eta 2 0 adsorbed him treating body without being brought into the processing chamber, it is possible to more stable etching process.

Plasma In ί Cale invention in claim 6, wherein the processing chamber, which has occurred in the vicinity of the space between or the air between at least two electrodes, to have a means for exhausting the reaction by-product gases, between electrodes anti ^ by-product gas, and it can be uniformly removed in the electrode plane. As a result, it is possible to small etching plane distribution. BRIEF DESCRIPTION OF THE DRAWINGS

Figure 1 is a schematic diagram showing an example of a RI E device according to the present invention.

Figure 2 is another example of ί Cale RI E device of the present invention, is a schematic diagram of a case in which a pretreatment chamber.

Figure 3 is a switching means used in ^ Ru RI E device of the present invention is a schematic diagram that describes a state in which a built-in heating mechanism.

Figure 4 is a schematic diagram illustrating the vicinity of the space or the space between the at least two electrodes, the processing chamber provided with means for exhausting the reaction by-product gases.

Figure 5 is a schematic diagram showing an example of a ¾ come in RI E device.

(Description of 苻号)

1 0 1 he treated,

1 02 load chamber,

1 03 ¾ management room,

1 04 the first opening and closing means,

1 05 main barrel pollution prevention means,

1 06 sputtering prevention means,

1 07 lower electrode,

1 08 the upper electrode,

1 09 matching device,

1 1 0 high-frequency power supply,

1 1 1 cooling means,

1 1 2 铯縁 body,

1 1 3, 1 1 4 exhaust means,

1 1 5, 1 1 6 gas supply means, 2 0 1 pretreatment chamber,

20 2 load chamber,

2 03 ¾ management room,

2 0 The first opening and closing means,

2 Y [delta] second switching means,

2 06 gas supply means which does not contain at least oxygen atoms,

2 07, 2 08 gas supply means,

2 09, 2 1 0, 2 1 1 exhaust means,

2 2 1 he treated,

Stage with a built-in 2 22 heating system,

9 one o one,

2 2 4 UV light source,

30 1 gate valve outer wall,

302 ί soil Setsuben,

3 03 control rods,

304 0 Links ",

305 internal heater,

306 external heater,

4 0 1 upper electrode,

4 02 lower electrode,

403 workpiece,

4 04 gas supply port,

4 05 gas exhaust port,

406 dipole ring the magnet door,

40 7 gas supply means,

408 exhaust means,

4 09 matching unit,

4 1 0 high-frequency power supply,

50 1 he treated,

502 load chamber, 503 processing chamber,

50 first on-off means,

505 metal pollution prevention means,

506 sputtering preventing means,

[delta] 507 lower electrode,

508 upper electrode,

509 matching device,

5 1 0 high-frequency power supply,

5 1 1 cooling means,

10 5 1 2 insulator,

5 1 3 5 1 4 exhaust means,

5 1 5 5 1 6 Kas supply means. BEST MODE FOR CARRYING OUT THE INVENTION

15 will now be described an embodiment example of the present invention with reference to the accompanying drawings.

ί Cale RI E device of the present invention consists configured, for example, as shown in FIGS.

In Figure 1, 1 0 1 he processed, 1 02 the load chamber for introducing the object to be processed 1 0 1, 1 03 specimen 1 0 1 is etched processing chamber 1 04 first door means 1 05 main barrel contamination prevention means 1 06 is sputter prevention means 1 07 is a lower electrode, 1 08 upper electrode 20-pole, 1 09 matching device, 1 1 0 high frequency power source, 1 1 1 lower means for cooling the object to be processed 1 0 1 via the electrodes 1 06, 1 1 2 insulator 1 1 3, 1 1 4 evacuation unit 1 1 5, 1 1 6 is a gas supply means.

The apparatus of Figure 2, via the pretreatment chamber 20 1, the point of introducing the object to be processed 22 1 differs from the device of FIG. 1 to the load chamber 202.

25 ½ management chamber 1 02 is AI alloy or S US steel chamber.

½ management chamber 1 02 Metal contamination prevention means 105 provided along the inner wall of the processing sputtering prevention means 1 06 provided in the interior of the electrode Te 沿Tsu, or Z and, an inner wall of the processing chamber 1 02, at least outermost surface but material containing no oxygen atom, for example carbides, nitrides, to form a fluoride.

That is, metal contamination prevention means 1 05, the sputtering preventing means 1 06, or and the inner wall of the processing chamber 30 1 02 itself carbides, nitrides, may be a fluoride. Suitable carbon I dry matter, as the nitride, S i C, A 1 N, include S i N and the like.

Moreover, to increase the resist provided on the substrate 1 0 1 (not shown), the selectivity of the treatment Ritai 1 0 1 of the material to be etched (^ example, if S i O), as follows Oh subjected to Do measures.

From the outside of the 5 RIE apparatus, into the processing chamber 1 0 in 2 〇. Because and H 2 0 is to prevent brought, subjected to means of the following two.

To prevent H 2 0 and 0 9 remaining in the various gases used in Γ process', aimed at purity of various gases to be used (impurity concentration 5 ppb or less). Moreover, not using organic material inside and no external leakage, also Wetted is C r. 0 3 using a gas system of performing a passivation process. 0 This measure, Ssu Hiroshiawase means I 1 5, 1 1 from 6 Eta 2 0 and 0. Supply is not of.

: As a method of avoiding from being brought by adsorbing the target object, the first method implemented in two ways is a method which does not expose the ^ processed in a clean room. He processed, at least a gas containing no oxygen atom (residual moisture is 5 ppb or less of the gas), for example N 9, A r, and stored in dry air, by transporting the surface of his processed Ru method der not to adsorb moisture. Specifically, Chiya Nha having a RI E device, between the previous process equipment and bringing the object to be processed to the RI E device, the conveying mechanism of his treating body filled with gas that does not include at least atom in a method to directly or methods medium with less gas residual moisture using a box filled sealed, it is eclipsed elevation.

20 The second method, but a method of exposing the workpiece to the clean room air, when introduced into the apparatus the object to be processed, a heating mechanism, and the loading chamber or Hiti ring can be introduced with little gas residual moisture introducing a workpiece into the chamber, that the Chiyanba the temperature was increased to 2 [delta] 0 ° about C, the his processed adsorbed moisture on the front and back sides of the purged times using less gas residual moisture Accordingly, a method for removing.

25 Therefore, without exposing the object to be processed in a clean room, at least do not contain oxygen atoms by storage and transport in a gas, since water on the surface and the back surface of the object to be processed is no longer able to adsorb, ¾ processed of that rather that adsorbed moisture is brought into the RIE apparatus. Further, even when exposed to the target object in a clean room, in Rohde viewing chamber and heating Champa, it is possible to remove the adsorbed moisture on the target object, incorporated wait 30 minutes water adsorbed on the target object is RIE apparatus there is no be. Internal RIE apparatus, i.e. H 2 〇 or 0 2 or the like present in the processing chamber 1 0 3, in order not brought into the plasma, the material of the apparatus, the object to be processed, and, the object to be processed with respect to the upper-les-Soo Bok, it was subjected to means of the following three.

Processing chamber 1 0 3 metal contamination prevention means 1 0 5 provided along the inner wall, the sputter preventing means 1 0 6 provided along connexion to the electrodes in the treatment chamber, or and the inner wall of the processing chamber 1 0 3, at least the outermost surface material containing no oxygen atom, for example carbides, nitrides, to form a fluoride. Chi words, metal contamination prevention means 1 0 5, sputtering evening prevention means 1 0 6, or Roh and the inner wall of the processing chamber 1 0 3 is itself carbides, nitrides, may be a fluoride. Moreover, metal contamination prevention means 1 0 5, sputtering evening prevention means 1 0 6, or and the inner wall of the processing chamber 1 0 3, and per se e.g. A 7 0 3 and S i 0. Even, its long as the material outermost surface does not contain oxygen atoms have good 'Hiteki carbides, nitrides, as the fluoride, S i C, A 1. \\ S i · \, A 1 F Q Z .Vl g FX i F 2, F e F 2 and the like.

The constituent material of the chamber itself is used as Ϊ processing chamber 1 0 3, A 1 metal base subjected to Arumai preparative process is not used, a material which has been subjected to full 'source of passivation treatment. A 1 F 3 ZM g F 2 in the case Chiyanba material itself is A 1 base metal, i F. Etc., when the material of the chamber itself is S Ji S using materials that do not contain F e F 2, etc., an oxygen atom (0).

^ Gas atmosphere which does not contain at least oxygen atoms, the Flip for the Regis Bok provided on the target object λ- Kiyua process and before performing heat treatment processing chamber 2 0 1, second switching means 2 0 4 via the provided connected to the load chamber 2 0 2. After UV cure against the workpiece with a gas 囲気 that does not contain at least oxygen atoms, with respect to the target object marked with Les Soo Bok in a gas atmosphere which does not contain at least oxygen atoms 2 1 0 - 2 5 0. Was C of high temperature baking. By intends catty this series of processing, since the water or organic solvent in without resist the register Bok is deformed is completely removed, without 〇 2 or an organic solvent is released into the chamber, the precise etch packaging is edible.

S i 0 9 a by etching, resulting in the interior of the processing chamber 1 0 3 0. To effectively and quickly remove the reaction product of equal, it was subjected to the following means.

The first, it is necessary to narrow as possible process space, a parallel plate type bra Zuma apparatus therefor, both electrode spacing as possible harshness comb, the ion energy further irradiating the substrate between the electrodes to small fence was adopted D RiM (Dipole Ring Magnet) method was introduced horizontal magnetic field. The second, by the exhaust from which is provided to the upper electrode outlet, can be removed more effectively the reaction by-products.

The third, employing high flow and large exhaust amount of the pump, for example, 50,000 1 Zm in~ 1 0 million in 1 Zm 1 n main force two Karubusuta first pump or a rotary one pump. Further by增加the raw material gas flow rate Te 5 to adjust the A r gas flow rate, a decrease in the relative amount of reaction products 0 0 like generated from the S i 0 o.

Such three measures, it is possible to quickly evacuate the reaction products, the reaction raw formed product is no longer adversely affect the Etchingu.

Switching means 1 0 4, for 2 0 4, 2 0 gate Bok valve using as 5, but generally he has one ίϊ heating only the valve 10 outside the heater is provided also inside the valve, '<lube valve seat up parts, Umate 8 0 ° C or more, preferably by heating to more than 1 3 0 ° C while preventing the water adsorption, suppress the adsorption of the reaction raw ¾ thereof. Therefore, only the internal heater gate valve, by heating in the valve valve seat or, not only removing the moisture adsorbed to the valve, since it is no longer the reaction products adhere only be improved selectivity ratio rather, also contributes ho to improve the operation rate of the apparatus. Example

Hereinafter will be described an RIE apparatus of the present invention with reference to the accompanying drawings, the present invention is not intended to be restricted to these examples.

20 (Example 1)

In this example, using the RIE apparatus shown in FIG. 1, by changing the material of the processing chamber 1 0 3 internal structure was observed the generation of H 2 0 and 0 2 in the processing chamber 1 0 3. This observation, quadrupole mass spectrometer having a differential pumping system (not shown); a (quadrupole mass spectrometer QM S), was carried out connected to the processing chamber 1 0 3.

25 as an object to be processed 1 0 1, using those provided S I_〇 2 film and the resist on the S i wafer by a predetermined etching process, the selection ratio (S i 0 9 film etching rate / I asked the registry Bok of E Tsuchingu speed). As the first on-off means shown in FIG. 1, it had use the gain one Tobarubu.

As the resist, using T HM R- i P 3 3 0 0 of Tokyo Ohka Kogyo made. Etching gas 30 scan uses a CF 4 / H?, S I_〇 as etch rate of 2 film is about 5 0 nm / min, gas pressure, gas flow rate, such as the high-frequency power applied to the electrodes as appropriate control was.

The ¾ management chamber 1 0 3 internal structures, metal contamination prevention means 1 0 5, sputtering evening prevention means 1 0 6, and, considering the inner wall of the treatment chamber 1 0 3, four combinations shown in Table 1 was examined generation of H c 〇 0 9 in.

The conditions Α, is a combination that corresponds to the όΐ coming technology. Processing chamber 1 0 3 Arumai bets treated consist A 1 alloy chamber having an inner wall, among which A 1 2third metal pollution hand stage 1 0 5 and sputter prevention means S i 0 1 0 6 provided.

Condition B is the inner wall of the processing chamber 1 0 3 differs from the S i C and the point only the condition A.

Condition C is the sputtering evening prevention means 1 0 6 differs from the S i C and the point only the condition A.

Condition D, the metal contamination prevention means 1 0 5, the sputtering preventing means 1 0 6, and the inner wall of the processing chamber 1 0 3, all points and S i C is different from the conditions A.

(table } )

Table 2, in each condition, H 2 0 and 0. It is the result of the generation amount and selectivity. Result of the condition B~D showed normalized by the numerical values ​​obtained under the conditions A. H 2 0 and 0 2 of the generation amount was determined from the respective molecular weight of 8 and 3 2 results. H. in condition A 0 0 2 generation amount were respectively a 4 X 1 0- 10 A, 2 1 0- 10 A in ion current value. : Table 2)

ιυ

From Table 2, the metal contamination prevention means is provided along the inner wall of the processing chamber, Suhatta prevention means provided ¾ connexion to an electrode of the processing chamber, or Roh and the inner wall of the processing chamber is at least the outermost surface

15

By There was a material containing no oxygen atom, metal contamination prevention means, sputtering means for preventing, or Roh and, from the inner wall of the processing chamber, Ya 0 9 to be mixed into the plasma that is occurring in the processing chamber for etching process it was found that it is possible to reduce the amount of Eta 9 0. As a result, RI E device is obtained with excellent selectivity.

(Example 2)

20

In the present example it was examined how to handle dependencies of the inner wall of the processing chamber 1 0 3. The treatment method of the inner wall, Condition D: Arumai preparative process and conditions E: examining the two types of fluoride passivated (A 1 F 3 / M g F 2).

Metal contamination prevention means 1 0 5 and a sputtering preventing means 1 0 6 was a S i C together. The other points were the same as in Example 1.

twenty five

Table 3, in each condition, the results of H © 0 0 2 generation amount and selectivity. RESULTS condition E showed normalized by the numerical values ​​obtained under the conditions D.

30 (Table 3

From Table 3, full 'to the inner wall surface of the ½ sense chamber; for a material in which the / passivated treatment was found to be reduced 0 0 9 Ya 1 Ri generated from the inner wall of the processing chamber. As a result, it was confirmed that the child improved selection ratio.

(Example 3)

In this example, by changing the heat treatment method of Regis Bok, was examined generation amount and selectivity of H 2 0 and 0 9 in the processing chamber 1 0 3.

At that time, at least an oxygen atom and not containing gas atmosphere, providing a pretreatment chamber subjected to a V curing process Flip respect Regis Bok provided on him treated and heat treatment, and the pre-treatment chamber and load chamber It was used Se' the RIE apparatus (Fig. 2) in the second opening and closing means.

2, 2 0 1 pretreatment chamber, 2 0 2 load chamber, 2 0 3 treatment chamber 2 0 5 first switching means, the 2 0 4 second switching means, 2 0 6 gas supply means which does not contain at least oxygen atoms, 2 0 7, 2 0 8 gas supply means 2 0 9-2 1 1 evacuation unit 2 2 1 workpiece, 2 2 2 with built-in heating system stage 2 2 3 windows, the 2 2 4 a UV light source.

Processing chamber 2 0 3 of metal contamination prevention means and the sputtering preventing means, and a S i C together. Further, the processing chamber 2 0 3, the processing method of the load chamber 2 0 2 and pretreatment chamber 2 0 1 inner wall, fluoride passivated - was (A 1 F ./ g F 2 ) treatment. As the first and second switching means 2 0 5, 2 0 4 was used gate Bok valve.

As the heat treatment method of Regis Bok investigated the following three combinations.

Condition F is a combination corresponding to the conventional art. That is, after providing a registry Bok on S i wafer, did not any heat treatment. Workpiece 2 2 1 is only allowed to pass through the pre-treatment 0 rooms 2 0 1 under atmospheric pressure. Condition G, in the pretreatment chamber 2 0 1 under atmospheric pressure, to he treated 沐 2 2 1 provided with Regis Bok on S i Uweha, subjected to UV curing and 1 3 0 ° C baking as heat treatment It was. Condition H is the point where the baking and 2 3 0 ° C is different from the condition G.

Conditions I is in the pre-treatment chamber under atmospheric pressure, and a gas that does not contain at least oxygen atoms, while flowing dry air was subjected to the same heat treatment condition H.

Conditions J, the vacuum (if ί Retsue 1 0- 2 Τοι table) points with pre-treatment chamber under the Ru different from the conditions I. It was subjected to the same heat treatment as the H.

Flip V cure and, relative to the workpiece 2 2 1, the ultraviolet light from the UV light source 2 2 4 Wavelength 2 2 0~ 2 7 0 nm, 8 mW / c (2 5 0 nm)], the window 2 to I呋 the process of irradiation for 15 minutes through 2 3. Further, baking and uses a heater incorporated in the Stage 2 2 2, against him processed 2 1 refers to the addition of 1 5 minutes heat.

The other points were the same as in Example 1.

Table 4, in each condition, the result of H 2 0 and 0 2 generation amount and selectivity. Result of the condition G~J showed normalized by the numerical values ​​obtained under the conditions F.

(Table 4)

From Table 4, it was subjected to heat treatment in the pretreatment chamber 2 0 1, 0 generation amount of 2 or H 2 0 is reduced, it was found that improved selectivity. Also, the atmosphere is subjected to a heat treatment, in the case of introducing gas free of at least oxygen ■ child, it was confirmed that the effect is further enhanced. To wait, when the conditions H and conditions I, even after heat treatment resist almost no change in the shape of, also be degassed is small from Regis Bok after pressurized heat treatment revealed. Or more of the conditions J result, it was found that the effect of the series of processing lines ό and is highest in (under intimidating.

Further, without using the second switching means, even in case of using the pre-treatment chamber as an independent box, seen to than condition Η improves the selection ratio was Dasa.

Furthermore, even if the condition F (no pressurized ripening process), by guiding people to free gas at least oxygen atoms, than condition F 0 2 and Eta 2 generation amount of 0 is reduced, thereby improving the selectivity of tendency to blink / two.

(Example 4)

In this example, the RI E device of FIG. 1, was examined how the heating first switching means 1 0 4. As the first switching means 1 () 4, using the gate valve shown in FIG. 3, 3 0 1 gate Bok valve outer wall, 3 0 2 sluice valve, 3 0 3 sluice valve 3 0 2 of the control rod, 3 0 4 0 Li in g, 3 0 5 sluice valve 3 0 2 installed internal heater, 3 0 6 denotes an external heater installed in the gate valve outer wall.

In load chamber 1 0 2 and the processing chamber 1 0 3, any heat treatment was not performed.

½ management chamber I 0 3 metal contamination prevention means 1 0 5 and a sputtering preventing means 1 0 6, were both the S i. The processing method of the inner wall of the processing chamber 1 0 3 and the load chamber 1 0 2 were fluoride passivated t A 1 F 9 g F 9 ) process.

Considered three combinations shown below.

Conditions K is a combination that corresponds to ½ coming technology. That is, the internal heater 3 0 5, and the external heating evening 3 0 6 of the first on-off means are all at 0 f I, it is the case not to any heating.

Condition L differs the first time base one King the external heater 3 0 6 closing unit or and always o eta to point only condition kappa. Base one King when setting 1 3 0 ° C, set during the etching process was set to 8 0 ° C.

Conditions M is the point that the internal heater 3 0 5 base only at one King on the first switching means is different from the condition K. Setting at baking was 1 3 0 ° C.

Conditions N are that was on the internal heater 3 0 5 of the first on-off means at all times is different from the condition K. Setting at baking 1 3 0 ° C, set during the etching process was set to 8 0 ° C. The points were the same as in Example 1.

Table 5, in each condition, the results of the generation amount and the selectivity of H 9 〇 0 9. Result of the condition L~N showed normalized by the numerical values ​​obtained under the conditions K.

(Table 5)

Table 5, the first switching means 1 0 4, the amount of 0 2 and Eta 2 0 be heated from the outside is not reduced. And power, and, by heating from the inside, 0 generation amount of 2 or Eta 2 0 is reduced, it was found that improved selectivity. Also, when heating the first switching means 1 0 4 from the inside, (not ie based ing time but also to continue heating during the etching process) continuously on a two and to, that the effect is further enhanced It was also confirmed.

Also, when heating the first switching means 1 0 4 constantly, since the reaction raw formed product generated in the etching process does not adsorb to the first switching means〗 0 4, the amount of particles in the processing chamber decreases there was also action to. As a result, the frequency of failure of the first switching means 1 0 4 was also confirmed advantage decline.

Above effect, even in the opening and closing means ¾ 2, can be obtained no small is needless to say C ヽ.

(Example 5)

In this example, the RIE apparatus of FIG. 1, was examined heat treatment of the object to be processed in the load chamber 1 0 2. As a means for heating the object to be processed in the load chamber, using a lamp heater (not Figure shown). In the first switching means 1 0 4 and the treatment chamber 1 0 3, any heat treatment was not I loaf. ¾ management chamber I 0 3 metal contamination prevention means 1 0 5 and a sputtering preventing means 1 0 6 was a S i C together. The processing method of the inner wall of the processing chamber 1 0 3 and the load chamber 1 0 2 were fluoride passivated IA 1 F 3 / M g F ) process.

Considered three combinations shown below.

Conditions 〇 is a combination corresponding to the conventional art. That is, Te load chamber 1 0 2 odor is the case not to any heat against the workpiece. Specifically, by introducing the object to be processed in the load chamber 1 0 2, after reducing the pressure load chamber 1 0 in 2 to 1 0- 8 T orr table, the workpiece under a reduced pressure near Ru ¾α management chamber It was allowed to move.

Conditions [rho, the lamp heater provided in the cord chamber 1 0 in 2 (not shown), the object to be processed

1 5 Te 0, differs from heated for 15 minutes is the condition ◦.

Condition Q is the lamp heater provided in the load chamber 1 0 in 2 (not shown), he processed the on 2 5 0, differs from heated for 15 minutes is the condition ◦.

The other points were the same as in Example 1.

Table 6 under the conditions, the result of Eta 0 〇 0 2 generation amount and selectivity. Conditions P, the result of Q showed normalized by the numerical values ​​obtained under the conditions 0.

(Table 6)

From Table 6, the selection ratio was found and the child improved by heating the object to be processed in the load chamber 1 0 2. The lifting, when treated with 2 5 0 ° C about the hot, remarkable effect was confirmed. Also, the play base using the RIE apparatus of FIG. 2, also in the above-mentioned effect pretreatment chamber 2 0 1, can be obtained no small matter of course. (Example 6)

In MotoKiyoshi, the process chamber 1 0 3 RIE apparatus shown in FIG. 1, has a structure of D RM (Dipole Ring Magnet) method shown in FIG. In the processing chamber shown in FIG. 4, in the vicinity of the space or the space between the at least two turtle poles, that is provided with means for exhausting the reaction by-product gases Example 1 and Ru different.

4, 4 0 1 upper electrode, 4 0 2 lower electrode, 4 0 3 披 processed, 4 0 4 gas lined outlet port, 4 0 5 gas exhaust port, 4 0 6 the dipole ring 'the magnet DOO, 4 0 7 gas supply means, 4 0 8 evacuation unit 4 0 9 matcher, 4 1 0 is a high frequency power source.

'The means for evacuating the 応副 product gas, has adopted the following four points.

Maintaining the distance d between the I upper electrode 4 0 1 and the lower electrode 4 0 2 below 3 0 mm.

2: the upper electrode 4 0 1, provided with a lined exhaust mechanism 4 0 4, 4 0 5 gas.

The outer periphery of the processing chamber, providing the dipole ring. The magnet DOO 4 0 6.

) As a gas exhaust unit 4 0 8 in the processing chamber, with an exhaust capable pump large flow (for example 5 0 0 0 Rate Torr min).

Other points were the same as condition D of Example 1.

As a result, in the case of using the means for exhausting such reaction by-product gases, since the object to be processed during the etching process the opportunity to be exposed to the reaction by-product gas to 减少 significantly, selectivity is further improved it was found to be. Industrial Applicability

As described above, according to the present invention, the processing chamber for etching process (^ or H 2 0 nonexistent, or is not brought RIE apparatus will be obtained. Etching result, he treated the resist improved selectivity of the design rule is 0. 2 to 0. 3 m provides the following sufficiently adaptable RIE apparatus to microfabrication E becomes possible.

Claims

A processing chamber and load chamber for introducing the I $ processed in the claims the object to be processed to the etching process, which are connected via a first switching means RIE (Reactive 'ions' Etchinku &') the device 5 Contact (, Te,
Metal contamination prevention means provided along the inner wall of the processing chamber, the processing set Ketasu click preventing means along the interior of the electrode, or and the inner wall of the processing chamber is at least the outermost surface contains no oxygen atom RIE apparatus which is a material.
2. an inner wall surface of the processing chamber, RIE apparatus according to claim 1, Jicho in that it consists of a material which has a fluorinated passivation treatment.
. 3 at least oxygen atoms in a gas atmosphere containing no, the pretreatment chamber subjected to a V curing process and heat treatment on the resist provided on the target object via said second switching means P - RIE apparatus according to claim 1 or 2, characterized in that it is Sennyo in de chamber.
4. The first and / or the second closing means, RIE apparatus according to any one of claims 1 to 3 Jicho and 5 that incorporates a heating mechanism.
5. The load chamber or Z and the processing chamber, RIE apparatus according to any one of claims I to 4, characterized in a secondary having a means for heating the object to be processed.
6. The processing chamber is in the vicinity of the space or the space between the at least two electrodes, having a means for exhausting the reaction by-product formation was force scan any i the preceding claims 1 to 5, wherein RI Ε device according ϋ.
0
PCT/JP1997/002326 1996-07-04 1997-07-04 Rie apparatus WO1998001898A1 (en)

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Application Number Priority Date Filing Date Title
JP17529696 1996-07-04
JP8/175296 1996-07-04

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153068A (en) * 1997-03-07 2000-11-28 Tadahiro Ohmi Parallel plate sputtering device with RF powered auxiliary electrodes and applied external magnetic field
WO2008099768A1 (en) * 2007-02-05 2008-08-21 Tokyo Electron Limited Etching apparatus, etching method, and method for production of electronic device
US9592250B2 (en) 2002-02-01 2017-03-14 Life Technologies Corporation Double-stranded oligonucleotides
US9777275B2 (en) 2002-02-01 2017-10-03 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency

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Publication number Priority date Publication date Assignee Title
JPS61168920A (en) * 1985-01-23 1986-07-30 Hitachi Ltd Material treating apparatus
JPH01305835A (en) * 1988-05-31 1989-12-11 Nippon Tungsten Co Ltd Silicon nitride coated quartz glass vessel
JPH0379026A (en) * 1989-08-23 1991-04-04 Hitachi Ltd Dry etching apparatus
JPH04360527A (en) * 1991-06-07 1992-12-14 Tokyo Electron Ltd Etching method and etching equipment
JPH05275541A (en) * 1992-03-28 1993-10-22 Yamaha Corp Multilayer wiring forming method

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Publication number Priority date Publication date Assignee Title
JPS61168920A (en) * 1985-01-23 1986-07-30 Hitachi Ltd Material treating apparatus
JPH01305835A (en) * 1988-05-31 1989-12-11 Nippon Tungsten Co Ltd Silicon nitride coated quartz glass vessel
JPH0379026A (en) * 1989-08-23 1991-04-04 Hitachi Ltd Dry etching apparatus
JPH04360527A (en) * 1991-06-07 1992-12-14 Tokyo Electron Ltd Etching method and etching equipment
JPH05275541A (en) * 1992-03-28 1993-10-22 Yamaha Corp Multilayer wiring forming method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153068A (en) * 1997-03-07 2000-11-28 Tadahiro Ohmi Parallel plate sputtering device with RF powered auxiliary electrodes and applied external magnetic field
US10196640B1 (en) 2002-02-01 2019-02-05 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US9592250B2 (en) 2002-02-01 2017-03-14 Life Technologies Corporation Double-stranded oligonucleotides
US9777275B2 (en) 2002-02-01 2017-10-03 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US9796978B1 (en) 2002-02-01 2017-10-24 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US10036025B2 (en) 2002-02-01 2018-07-31 Life Technologies Corporation Oligonucleotide compositions with enhanced efficiency
US10106793B2 (en) 2002-02-01 2018-10-23 Life Technologies Corporation Double-stranded oligonucleotides
WO2008099768A1 (en) * 2007-02-05 2008-08-21 Tokyo Electron Limited Etching apparatus, etching method, and method for production of electronic device

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