TWI537412B - Vacuum coating equipment - Google Patents
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本發明是有關於一種鍍膜設備,特別是指一種可在真空環境下於一待鍍物上形成一薄膜的真空鍍膜設備。 The invention relates to a coating device, in particular to a vacuum coating device capable of forming a film on a material to be plated under a vacuum environment.
真空鍍膜法是一種在觸控面板、太陽能電池等等的光電產業、半導體產業常見的鍍膜技術,已知真空鍍膜法包含物理氣相沉積(PVD)、化學氣相沉積(CVD)等方式。以薄膜太陽能電池之製程為例,需要利用真空鍍膜方式於一基板鍍上透明導電薄膜電極、光電轉換層等膜層,又或者,例如銅銦鎵薄膜太陽能電池製作時,則需要先於基板鍍上銅薄膜、銦薄膜後再進行硒化處理。因此,現有的一種真空鍍膜設備,是在一腔體內設有數個腔室,每個腔室可進行不同材料薄膜的鍍膜製程,且相鄰腔室間設有閥門,藉由閥門啟閉來控制腔室間的連通與否。故進行太陽能電池之鍍膜製程時,主要是先使基板於第一個腔室內鍍上第一種材料的薄膜,接著打開第一個腔室與第二個腔室間的閥門,使該基板輸送到第二個腔室鍍上第二種材料的薄膜,後續即依此類推,打開下一閥門,並將基板輸送到 下一腔室鍍膜。 The vacuum coating method is a coating technology commonly used in the photovoltaic industry and the semiconductor industry of touch panels, solar cells, etc. The vacuum coating method is known to include physical vapor deposition (PVD) and chemical vapor deposition (CVD). Taking a thin film solar cell process as an example, a vacuum conductive film is required to plate a transparent conductive film electrode, a photoelectric conversion layer, or the like on a substrate, or, for example, a copper indium gallium film solar cell is required to be plated prior to the substrate. The copper film and the indium film are then subjected to selenization treatment. Therefore, a vacuum coating apparatus has a plurality of chambers in a cavity, each of which can perform a coating process of different material films, and a valve is provided between adjacent chambers, and is controlled by valve opening and closing. Whether the chambers are connected or not. Therefore, when the solar cell coating process is performed, the substrate is first plated with a film of the first material in the first chamber, and then the valve between the first chamber and the second chamber is opened to transport the substrate. The second chamber is coated with a film of the second material, and so on, and then the next valve is opened, and the substrate is transported to The next chamber is coated.
但因為控制閥門開啟與關閉,會耗費一定的時間。而且當閥門開啟後,相鄰兩腔室就會互相連通,上一腔室中的工作氣體會流到下一腔室內,進而影響下一腔室內的真空度,且任一腔室要進行鍍膜時,都必須先將腔室內抽到一定的真空度後再通入工作氣體,因此每當基板送入下一腔室後,為了維持下一腔室的真空度,又必需重新抽真空而耗費時間,如此導致製程麻煩、時間長,製造效率低。 However, it takes a certain amount of time because the control valve is opened and closed. Moreover, when the valve is opened, the adjacent two chambers communicate with each other, and the working gas in the upper chamber flows into the next chamber, thereby affecting the degree of vacuum in the next chamber, and any chamber is to be coated. At the same time, the working chamber must be pumped to a certain degree of vacuum before the working gas is introduced. Therefore, each time the substrate is sent to the next chamber, in order to maintain the vacuum of the next chamber, it is necessary to re-vacuate the vacuum. Time, which leads to troublesome processes, long time, and low manufacturing efficiency.
因此,本發明之目的,即在提供一種可提升製程速度、縮短製程時間的真空鍍膜設備。 Accordingly, it is an object of the present invention to provide a vacuum coating apparatus which can increase the process speed and shorten the process time.
於是,本發明真空鍍膜設備,適用於在一基板上鍍膜,並包含:一真空腔體,及一抽氣幫浦。該真空腔體包括一界定出一腔室的腔壁,該腔室包括二相鄰且未受隔開而相連通的鍍膜空間,該等鍍膜空間皆可供該基板進行鍍膜製程。該抽氣幫浦連接該真空腔體,用於對該等鍍膜空間抽真空,該抽氣幫浦具有一位於該等鍍膜空間之間的抽氣口,並可在一第一抽氣模式與一第二抽氣模式間切換,該第一抽氣模式的抽氣效率大於該第二抽氣模式的抽氣效率,所述抽氣效率是指單位時間所抽走的氣體體積。 Thus, the vacuum coating apparatus of the present invention is suitable for coating a substrate, and comprises: a vacuum chamber, and a pumping pump. The vacuum chamber includes a chamber wall defining a chamber, and the chamber includes two adjacent coating spaces that are not separated and communicated, and the coating spaces are all available for the substrate to be coated. The pumping pump is connected to the vacuum chamber for vacuuming the coating space, the pumping pump has a suction port between the coating spaces, and can be in a first pumping mode and a Switching between the second pumping modes, the pumping efficiency of the first pumping mode is greater than the pumping efficiency of the second pumping mode, and the pumping efficiency refers to the volume of gas pumped per unit time.
本發明之功效:藉由該抽氣幫浦可同時對該兩鍍膜空間抽真空,可隨時維持該兩鍍膜空間的真空度,而且該抽氣幫浦可於兩種不同的抽氣模式間切換,可因應鍍 膜空間的真空度變化切換到適當的抽氣模式,應用上非常靈活且方便。本發明藉由在所述鍍膜空間交界處設置該抽氣幫浦,可免去於該兩鍍膜空間之間設置閥門,從而可提升製程速度、縮短製程時間,具有鍍膜效率高之優點。 The utility model has the advantages that: the pumping pump can simultaneously vacuum the two coating spaces, and the vacuum degree of the two coating spaces can be maintained at any time, and the pumping pump can switch between two different pumping modes. Can be plated The change in vacuum in the membrane space is switched to the appropriate pumping mode, which is very flexible and convenient to use. By providing the pumping pump at the interface of the coating space, the invention can eliminate the need for a valve between the two coating spaces, thereby improving the processing speed and shortening the processing time, and has the advantages of high coating efficiency.
1‧‧‧基板 1‧‧‧Substrate
2‧‧‧真空腔體 2‧‧‧vacuum chamber
21‧‧‧腔壁 21‧‧‧ cavity wall
211‧‧‧準備室 211‧‧‧ preparation room
212‧‧‧腔室 212‧‧‧ chamber
213、214‧‧‧鍍膜空間 213, 214‧‧ ‧ coating space
22‧‧‧閥門 22‧‧‧ Valve
3‧‧‧準備單元 3‧‧‧Preparation unit
31‧‧‧準備載台 31‧‧‧Preparation of the stage
32‧‧‧幫浦 32‧‧‧
321‧‧‧抽氣口 321‧‧‧Exhaust port
4‧‧‧鍍膜單元 4‧‧‧ coating unit
41‧‧‧載台 41‧‧‧ stage
42‧‧‧靶材 42‧‧‧ Target
43‧‧‧磁鐵 43‧‧‧ magnet
5‧‧‧抽氣幫浦 5‧‧‧Exhaust pump
51‧‧‧抽氣口 51‧‧‧Exhaust port
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是本發明真空鍍膜設備的一實施例的設備示意圖;及圖2是該實施例進行鍍膜製程的流程示意圖。 Other features and effects of the present invention will be apparent from the embodiments of the present invention, wherein: FIG. 1 is a schematic view of an apparatus of an embodiment of a vacuum coating apparatus of the present invention; and FIG. 2 is a coating process of the embodiment. Schematic diagram of the process.
參閱圖1與圖2,本發明真空鍍膜設備之一實施例,是以一磁控濺鍍設備為例,並適用於在一基板1上鍍膜。該真空鍍膜設備包含:一真空腔體2、一準備單元3、二鍍膜單元4,以及一抽氣幫浦5。 Referring to FIG. 1 and FIG. 2, an embodiment of the vacuum coating apparatus of the present invention is an example of a magnetron sputtering apparatus and is suitable for coating on a substrate 1. The vacuum coating apparatus comprises: a vacuum chamber 2, a preparation unit 3, a second coating unit 4, and an evacuation pump 5.
該真空腔體2包括一界定出相鄰的一準備室211與一腔室212的腔壁21,以及一位於該腔室212與該準備室211之間的閥門22。該腔室212位於該準備室211的下游處,並包括二相鄰且未受隔開而相連通的鍍膜空間213、214,該等鍍膜空間213、214皆可供該基板1進行鍍膜製程。其中該鍍膜空間214相對於該鍍膜空間213遠離該腔室212。該閥門22可受控制而啟閉,以使該腔室212與該準備室211連通或不連通。 The vacuum chamber 2 includes a chamber wall 21 defining an adjacent preparation chamber 211 and a chamber 212, and a valve 22 between the chamber 212 and the preparation chamber 211. The chamber 212 is located downstream of the preparation chamber 211 and includes two adjacent and unspaced coating spaces 213, 214. The coating spaces 213, 214 are all available for the substrate 1 to be coated. The coating space 214 is away from the chamber 212 relative to the coating space 213. The valve 22 can be controlled to open and close to allow the chamber 212 to communicate or not communicate with the preparation chamber 211.
該準備單元3包括一位於該準備室211並用於承載該基板1的準備載台31,以及一連接該真空腔體2並用於對該準備室211抽真空的幫浦32,該幫浦32安裝於該腔壁21後側或上方,並具有一連通該準備室211的抽氣口321。 The preparation unit 3 includes a preparation stage 31 located in the preparation chamber 211 for carrying the substrate 1, and a pump 32 connected to the vacuum chamber 2 for evacuating the preparation chamber 211. The pump 32 is mounted. The rear side or upper side of the chamber wall 21 has a suction port 321 that communicates with the preparation chamber 211.
該等鍍膜單元4分別位於該等鍍膜空間213、214。每一鍍膜單元4包括一用於承載該基板1的載台41、一與該載台41間隔相對的靶材42,以及一鄰近該靶材42的磁鐵43。該等鍍膜單元4的該等靶材42材料不同,使該基板1可以於該等鍍膜空間213、214中鍍上不同材料的薄膜。 The coating units 4 are located in the coating spaces 213 and 214, respectively. Each coating unit 4 includes a stage 41 for carrying the substrate 1, a target 42 spaced apart from the stage 41, and a magnet 43 adjacent to the target 42. The materials of the targets 42 of the coating units 4 are different in material, so that the substrate 1 can be plated with thin films of different materials in the coating spaces 213 and 214.
該抽氣幫浦5連接該真空腔體2,用於對該等鍍膜空間213、214抽真空。該抽氣幫浦5安裝於該腔壁21後側或者上方,並具有一朝前延伸並穿過該腔壁21而連通該等鍍膜空間213、214的抽氣口51。該抽氣口51位於該等鍍膜空間213、214之間,主要是位於該等鍍膜空間213、214的交界處。該抽氣幫浦5可在一第一抽氣模式與一第二抽氣模式間切換,且該第一抽氣模式的抽氣效率大於該第二抽氣模式的抽氣效率。所述抽氣效率是指單位時間所抽走的氣體體積,抽氣效率越大,代表能在越短的時間內使該等鍍膜空間213、214達到越高的真空度。 The evacuation pump 5 is connected to the vacuum chamber 2 for evacuating the coating spaces 213, 214. The pumping pump 5 is mounted on the rear side or above the chamber wall 21 and has a suction port 51 extending forwardly and passing through the chamber wall 21 to communicate the coating spaces 213, 214. The air suction port 51 is located between the coating spaces 213 and 214, and is mainly located at the boundary of the coating spaces 213 and 214. The pumping pump 5 is switchable between a first pumping mode and a second pumping mode, and the pumping efficiency of the first pumping mode is greater than the pumping efficiency of the second pumping mode. The pumping efficiency refers to the volume of gas pumped away per unit time, and the greater the pumping efficiency, the higher the degree of vacuum of the coating spaces 213, 214 can be achieved in a shorter period of time.
該第一抽氣模式的運作功率大於該第二抽氣模式的運作功率,以控制該抽氣幫浦5能啟動較高效能的抽氣模式。通常在本發明裝置剛啟動時,或腔室212真空度 較差時,為了快速達到高真空度,可以控制該抽氣幫浦5運作於該第一抽氣模式。當腔室212達到穩定且良好的高真空度時,則可以切換至較低功率的該第二抽氣模式。在整個鍍膜製程中,上述使用不同抽氣模式進行抽氣的方式僅是舉例,實際上抽氣效率的設定,可依使用者所要求的生產效率及其選擇的性價比而定。 The operating power of the first pumping mode is greater than the operating power of the second pumping mode to control the pumping pump 5 to initiate a higher efficiency pumping mode. Typically when the device of the invention has just started, or the chamber 212 is under vacuum In the case of poor performance, in order to quickly reach a high degree of vacuum, the pumping pump 5 can be controlled to operate in the first pumping mode. When the chamber 212 reaches a stable and good high vacuum, it can be switched to the second pumping mode of lower power. In the entire coating process, the above-mentioned method of pumping using different pumping modes is only an example, and in fact, the setting of the pumping efficiency can be determined according to the production efficiency required by the user and the cost performance selected.
抽氣效率的設定值大小與所要求的生產效率(Turn Around Time)及該真空腔體2大小有關係。舉例來說,該腔室212的長度為5~10公尺,寬度為0.3~0.6公尺,高度為0.2~0.5公尺時,在該第一抽氣模式下,抽氣效率可為500公升/秒~3500公升/秒,在該第二抽氣模式下,抽氣效率可為200公升/秒~1000公升/秒。另一方面,當該腔室212尺寸較大時,長度為10~20公尺,寬度為1.2~3公尺,高度為1~2公尺時,在該第一抽氣模式下,抽氣效率可為15000公升/秒~30000公升/秒,在該第二抽氣模式下,抽氣效率可為5000公升/秒~10000公升/秒。其中,腔室212大小的選用與欲鍍基板1的尺寸有關。 The set value of the pumping efficiency is related to the required production efficiency (Turn Around Time) and the size of the vacuum chamber 2. For example, the chamber 212 has a length of 5 to 10 meters, a width of 0.3 to 0.6 meters, and a height of 0.2 to 0.5 meters. In the first pumping mode, the pumping efficiency can be 500 liters. / sec ~ 3500 liters / sec, in this second pumping mode, the pumping efficiency can be 200 liters / sec ~ 1000 liters / sec. On the other hand, when the chamber 212 is large in size, the length is 10 to 20 meters, the width is 1.2 to 3 meters, and the height is 1 to 2 meters, in the first pumping mode, pumping The efficiency can be from 15,000 liters/second to 30,000 liters/second. In the second pumping mode, the pumping efficiency can be from 5,000 liters/second to 10,000 liters/second. The size of the chamber 212 is selected according to the size of the substrate 1 to be plated.
本發明進行鍍膜時,首先將基板1放置於該準備室211的該準備載台31上,此時該閥門22關閉,以隔開該準備室211與該腔室212。再藉由該幫浦32將該準備室211抽氣至一定的真空度,如此也有助於將附著於該基板1表面的微塵、粒子或其他污染物抽走,可達到清潔基板1效果。且更進一步地,也可以利用圖未示的加熱設備加熱使該基板1溫度略升,如此可使基板1表面的附著物 因溫度升高而獲得動能,更易被該幫浦32的抽氣作用抽走。 In the case of the present invention, the substrate 1 is first placed on the preparation stage 31 of the preparation chamber 211, and the valve 22 is closed to separate the preparation chamber 211 from the chamber 212. The pumping chamber 32 is further evacuated to a certain degree of vacuum by the pump 32, which also helps to remove dust, particles or other contaminants adhering to the surface of the substrate 1, thereby achieving the effect of cleaning the substrate 1. Furthermore, the temperature of the substrate 1 may be slightly increased by heating by means of a heating device not shown, so that the deposit on the surface of the substrate 1 can be made. The kinetic energy obtained by the temperature rise is more easily taken away by the pumping action of the pump 32.
接著控制該閥門22開啟,再將該基板1傳送到該腔室212之鍍膜空間213,並置於鍍膜空間213中的該載台41上,再控制該閥門22關閉。該基板1的傳送方式可以利用滾輪轉動來帶動前進,或利用治具配合機械手臂將基板1夾取至定位,或者也可以為其他方式。由於如何傳送該基板1非本發明的改良重點,故不再說明。 Then, the valve 22 is controlled to be opened, and the substrate 1 is transferred to the coating space 213 of the chamber 212, and placed on the stage 41 in the coating space 213, and the valve 22 is controlled to be closed. The transfer mode of the substrate 1 can be driven by the rotation of the roller, or the substrate 1 can be clamped to the positioning by the jig and the robot arm, or other methods can be used. Since the transfer of the substrate 1 is not an improvement of the present invention, it will not be described.
接著控制該抽氣幫浦5啟動並運作於該第一抽氣模式,可將抽氣效率設定為該第一抽氣模式的其中一數值,以將該鍍膜空間213抽氣達到可進行鍍膜製程之真空度(通常為10-5Torr等級),如此即可開始鍍膜,且接著就可將該抽氣幫浦5切換到較低運作功率的該第二抽氣模式。此時必須通入工作氣體,所述工作氣體被電子撞擊後會產生離子,由於本實施例以磁控濺鍍為例,故該靶材42作為陰極以吸引入射的離子,而且配合該磁鐵43的設置以提升電子移動路徑,從而提升工作氣體的游離效率,如此可使該靶材42受到較強的轟擊效果,以提升鍍膜速率。在磁控濺射鍍膜時的真空度約在10-4Torr等級。 Then, the pumping pump 5 is controlled to start and operate in the first pumping mode, and the pumping efficiency can be set to one of the values of the first pumping mode to pump the coating space 213 to a coating process. The degree of vacuum (usually on the order of 10 -5 Torr), so that the coating can be started, and then the pumping pump 5 can be switched to the second pumping mode of lower operating power. At this time, a working gas must be introduced, and the working gas generates ions after being struck by electrons. Since the present embodiment takes magnetron sputtering as an example, the target 42 serves as a cathode to attract incident ions, and the magnet 43 is matched. The arrangement is to increase the electron moving path, thereby increasing the free efficiency of the working gas, so that the target 42 can be subjected to a strong bombardment effect to increase the coating rate. The degree of vacuum at the time of magnetron sputtering coating is about 10 -4 Torr.
該基板1於該鍍膜空間213鍍上第一種材料的薄膜後,接著就可輸送至位於下游的該鍍膜空間214,並置於該鍍膜空間214的該載台41上。此時該抽氣幫浦5仍處於該第二抽氣模式,而且由於該抽氣幫浦5的抽氣口51介於該等鍍膜空間213、214間,故對於該等鍍膜空間213、 214同時都具有良好的抽氣效果。因此,該鍍膜空間214也隨時維持在可進行鍍膜的真空狀態下,故基板1傳送至該鍍膜空間214後,實際上可立刻鍍膜;但另一方面,此時也可先等該抽氣幫浦5再抽氣一段時間後,例如將殘留於該腔室212中的工作氣體與被濺射出的靶材42原子或分子抽乾淨後,再進行該鍍膜空間214中的鍍膜製程,以在該基板1鍍上第二種材料的薄膜。在該鍍膜空間214中的鍍膜過程與原理,皆與該鍍膜空間213內的製程相同,故不再贅述。 After the substrate 1 is coated with the film of the first material in the coating space 213, it can be transported to the coating space 214 located downstream and placed on the stage 41 of the coating space 214. At this time, the pumping pump 5 is still in the second pumping mode, and since the pumping port 51 of the pumping pump 5 is interposed between the coating spaces 213 and 214, the coating space 213 is 214 also has a good pumping effect. Therefore, the coating space 214 is also maintained in a vacuum state in which the coating can be performed at any time. Therefore, after the substrate 1 is transferred to the coating space 214, the coating can be immediately applied; but on the other hand, the pumping gang can be waited for at this time. After the pump 5 is further pumped for a period of time, for example, the working gas remaining in the chamber 212 and the atom 42 or molecules of the sputtered target 42 are cleaned, and then the coating process in the coating space 214 is performed to The substrate 1 is plated with a film of a second material. The coating process and principle in the coating space 214 are the same as the processes in the coating space 213, and therefore will not be described again.
補充說明的是,鍍膜時使用的工作氣體,視鍍膜製程有所改變。在鍍氮化物膜時,可使用氬氣(Ar2)與氮氣(N2)之配合,鍍氧化物膜時,可使用氬氣與氧氣(O2)之配合。通常O2與N2的用量較少,流量約為十sccm以內,並且會與流量為數十sccm的Ar2在混合室中先混合後再通入該腔室212內使用。另外有些製程,則使用Ar2即可。 It is added that the working gas used in the coating is subject to change depending on the coating process. In the case of a nitride film, a combination of argon (Ar 2 ) and nitrogen (N 2 ) may be used. When an oxide film is deposited, a combination of argon and oxygen (O 2 ) may be used. Usually, the amount of O 2 and N 2 is small, the flow rate is within about ten sccm, and it is mixed with Ar 2 having a flow rate of several tens of sccm in the mixing chamber and then introduced into the chamber 212 for use. In some other processes, Ar 2 can be used.
需要說明的是,本實施例是以兩個鍍膜空間213、214為例,但於實施上,也可以有更多個鍍膜空間,且每個鍍膜空間都可各自獨立進行鍍膜製程,而該基板1則可依序傳送到每個鍍膜空間中鍍膜。此外,也可以視情況增加更多的幫浦來對該等鍍膜空間213、214抽真空。另外,當該基板1於該鍍膜空間214進行鍍膜時,該鍍膜空間213亦可有另一基板1進行鍍膜,而該準備室211也可置入另一基板1作準備,亦即,本發明此種鍍膜設備是可同時使數片基板1於同一時間下進行不同階段的準備工作或鍍膜 製程,而且藉由該抽氣幫浦5的抽氣作用,即使其中一鍍膜空間213、214中有些微靶材42材料與工作氣體往另一鍍膜空間213、214濺射時,也會及時被該抽氣幫浦5的抽氣作用抽走,故各製程間不會互相影響。更何況事實上,上述不同鍍膜空間213、214中的氣體相混的情形不易發生,因為採用磁控濺射時,由於陰極的靶材42與陽極的基片端(圖未示)已通入數百伏特的高壓,使工作氣體從陰極端導入時就很容易離子化,再加上磁控也會讓帶電離子在鍍膜的有效工作區間內移動,從而限制被游離後的工作氣體往相鄰的鍍膜空間213、214移動的能力。而且不同製程的鍍膜空間213、214之間也可以額外設置真空幫浦抽氣,並且使該兩鍍膜空間213、214的鍍膜工作區域保持一定距離,例如數百mm以上的距離,如此都可以進一步避免工作氣體移動至不同製程的鍍膜空間213、214。 It should be noted that, in this embodiment, the two coating spaces 213 and 214 are taken as an example, but in practice, there may be more coating spaces, and each coating space may be independently coated, and the substrate is 1 can be transferred to the coating space in each coating space. In addition, more pumps may be added as needed to evacuate the coating spaces 213, 214. In addition, when the substrate 1 is coated in the coating space 214, the coating space 213 may be coated with another substrate 1 , and the preparation chamber 211 may be placed in another substrate 1 for preparation, that is, the present invention. The coating device is capable of simultaneously preparing or coating a plurality of substrates 1 at different stages at the same time. The process, and by the pumping action of the pumping pump 5, even if some of the material of the micro-target 42 in one of the coating spaces 213, 214 and the working gas are sputtered to the other coating space 213, 214, it will be promptly The pumping action of the pumping pump 5 is pumped away, so that the processes do not affect each other. Moreover, in fact, the mixing of the gases in the different coating spaces 213, 214 described above is not easy to occur, because when the magnetron sputtering is used, the substrate 42 of the cathode and the substrate end of the anode (not shown) have been introduced. The high voltage of one hundred volts makes it easy to ionize when the working gas is introduced from the cathode end. In addition, the magnetic control will also move the charged ions in the effective working range of the coating, thereby limiting the free working gas to the adjacent The ability of the coating spaces 213, 214 to move. Moreover, vacuum pumping may be additionally provided between the coating spaces 213 and 214 of different processes, and the coating working area of the two coating spaces 213 and 214 may be kept at a certain distance, for example, a distance of several hundred mm or more, so that further The working gas is prevented from moving to the coating spaces 213, 214 of different processes.
綜上所述,藉由該抽氣幫浦5可同時對該等鍍膜空間213、214抽真空,可隨時維持該等鍍膜空間213、214的真空度,而且該抽氣幫浦5可於兩種不同抽氣效率的抽氣模式間切換,可因應鍍膜空間213、214的真空度變化切換到適當的抽氣模式,應用上非常靈活且方便。該等鍍膜空間213、214之間不需設置閥門,故可節省閥門啟閉之時間,也不會有以往閥門開啟後就必須重新進行抽真空所產生的麻煩、製程時間長,製造效率低等問題。因此,本發明藉由在鍍膜空間213、214交界處設置該抽氣幫浦5,就可免去於該等鍍膜空間213、214之間設置閥門,從而可 提升製程速度、縮短製程時間,具有鍍膜效率高之優點。 In summary, the evacuation pump 5 can simultaneously evacuate the coating spaces 213 and 214, and the vacuum degree of the coating spaces 213 and 214 can be maintained at any time, and the pumping pump 5 can be used in two. The switching between the pumping modes of different pumping efficiencies can be switched to the appropriate pumping mode according to the change of the vacuum degree of the coating spaces 213 and 214, and the application is very flexible and convenient. There is no need to install a valve between the coating spaces 213 and 214, so the time for opening and closing the valve can be saved, and there is no trouble that the vacuum must be re-opened after the valve is opened, the processing time is long, and the manufacturing efficiency is low. problem. Therefore, the present invention can eliminate the need to provide a valve between the coating spaces 213 and 214 by providing the pumping pump 5 at the boundary between the coating spaces 213 and 214. Improve process speed, shorten process time, and have the advantage of high coating efficiency.
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above is only the embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and the patent specification of the present invention are still It is within the scope of the patent of the present invention.
1‧‧‧基板 1‧‧‧Substrate
2‧‧‧真空腔體 2‧‧‧vacuum chamber
21‧‧‧腔壁 21‧‧‧ cavity wall
211‧‧‧準備室 211‧‧‧ preparation room
212‧‧‧腔室 212‧‧‧ chamber
213、214‧‧‧鍍膜空間 213, 214‧‧ ‧ coating space
22‧‧‧閥門 22‧‧‧ Valve
3‧‧‧準備單元 3‧‧‧Preparation unit
31‧‧‧準備載台 31‧‧‧Preparation of the stage
32‧‧‧幫浦 32‧‧‧
321‧‧‧抽氣口 321‧‧‧Exhaust port
4‧‧‧鍍膜單元 4‧‧‧ coating unit
41‧‧‧載台 41‧‧‧ stage
42‧‧‧靶材 42‧‧‧ Target
43‧‧‧磁鐵 43‧‧‧ magnet
5‧‧‧抽氣幫浦 5‧‧‧Exhaust pump
51‧‧‧抽氣口 51‧‧‧Exhaust port
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