JP2001156058A - Film forming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film forming apparatus capable of forming a CVD film, without causing damage to a sample due to a plasma, and forming a sputter film, without exposing the sample to the air. SOLUTION: A first reaction chamber 1 for forming the CVD film comprises a plasma generator 3 and a plasma processor 4, a second reaction chamber 2 for forming the sputter film is connected to the first reaction chamber 1, the plasma generator 3 and the plasma processor 4 are connected through an opening 18, and the first reaction chamber 1 has an exhaust hole 7 for exhausting the atmosphere in the first reaction chamber 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to a film forming apparatus, and more particularly, to a glass substrate used for a liquid crystal display device or a semiconductor substrate made of silicon or the like used for a semiconductor device. And a device for forming a thin film on the like.

[0002]

2. Description of the Related Art FIG. 9 is a conceptual diagram of a conventional film forming apparatus disclosed in Japanese Patent Application Laid-Open No. Hei 7-15062.

[0003] The conventional film forming apparatus includes a film forming chamber 90 formed so as to be capable of reducing pressure. First electrode 100 and second electrode 1
02 are provided facing each other. A substrate 103 is mounted on the second electrode 102. A high-frequency power is supplied to the first electrode 100, a high-frequency power is also supplied to the second electrode 102, and a reaction gas is supplied into the film formation chamber 90 to supply the substrate 103
A thin film is formed thereon by CVD. In the same film forming chamber 90, a target 101 for sputtering film formation is mounted on the first electrode 100. The substrate 103 is mounted on the second electrode 102. High-frequency power is supplied to the first electrode 100 and high-frequency power is also supplied to the second electrode 102, and a thin film is formed on the substrate 103 by a sputtering method. According to this apparatus, a thin film is continuously formed without exposing the substrate to an oxidizing atmosphere. In the figure, 90a is an exhaust unit, 90b is a reaction gas supply mechanism, 105 is a high-frequency power supply (first electrode), 106 is a matching circuit, 107 is a bandpass filter, 108 is a DC power supply, 110 is a high-frequency power supply (second power supply). Electrodes) and 111 represent matching circuits.

[0004]

However, in the conventional device described above, when a TFT (thin film transistor) is manufactured, when a gate insulating film SiO ₂ layer is formed on a Si layer which is a semiconductor layer, a sample surface is formed. The plasma is irradiated and the sample surface may be damaged.

[0005] The SiO ₂ layer of the gate insulating film and the S
When charge accumulation or trapping occurs at the i-layer interface due to the above-mentioned damage, the flat band voltage (Vf
b) changes. When the flat band voltage (Vfb) changes, the threshold voltage (Vth) of the TFT changes as shown in the following equation (1).

Vth = 2φf + Vfb + {2KεqNa (2φf)} / Co (1) In the above equation, φf is a Fermi potential difference, K is a relative permittivity of a semiconductor, ε is a permittivity of a vacuum, and q is a permittivity of an electron. charge,
Na represents the acceptor density, and Co represents the capacity of the insulating film.

[0007] After the gate insulating film SiO ₂ layer formed and exposing the sample once the atmosphere, touching surfaces and side surfaces of the gate insulating film SiO ₂ layer formed on the sample surface with the atmosphere, adsorbs moisture in the air I do.

As shown in FIG. 10, the moisture and Vfb in the SiO ₂ layer tend to increase in absolute value of Vfb as the moisture increases. The shift from the theoretical Vfb value described above is
This may cause the TFT to be defective, resulting in a lower product yield.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. After a CVD film is formed using a film forming apparatus capable of hardly causing plasma damage to a sample, the sample is removed from the atmosphere. It is an object of the present invention to provide an apparatus for forming a sputtered film without exposure to the inside.

[0010]

According to a first aspect of the present invention, there is provided a film forming apparatus including a first reaction chamber for forming a CVD film including a plasma generating unit and a plasma processing unit. A second reaction chamber for forming a sputtered film is connected to the first reaction chamber. An opening connects the plasma generation unit and the plasma processing unit. An exhaust port for exhausting the atmosphere in the first reaction chamber is provided in the first reaction chamber.

[0011] In the film forming apparatus according to the second aspect, the exhaust port is provided on both sides of the opening so as to sandwich the opening.

According to a third aspect of the present invention, the opening is provided with an airflow control means for controlling an airflow.

According to a fourth aspect of the present invention, in the film forming apparatus of the second aspect, airflow control means for controlling an airflow is provided in each of the openings.

[0014]

According to the first aspect of the present invention, in the first reaction chamber, the plasma region is formed separately from the sample, so that the formation of the SiO ₂ film causes damage to the sample surface. The reaction is performed by the reaction of no oxygen radical with SiH ₄ .
Thus, the occurrence of accumulated or trapped charge to the internal SiO ₂ layer to the gate insulating film, or the occurrence of interface states in the Si layer interface between the lower semiconductor layer of the SiO ₂ layer and the SiO ₂ layer is suppressed You.

After forming the SiO ₂ layer in the first reaction chamber, the sample is moved from the first reaction chamber in a vacuum state to the second reaction chamber in a vacuum state.
Then, an aluminum layer is formed by sputtering. The sample is not exposed to the atmosphere before forming the aluminum layer. When the sample is taken out of the second reaction chamber into the atmosphere, the sample surface is covered with an aluminum layer.
_The moisture adsorbed on the _two layers is reduced.

Next, the operation of the present invention will be described. In the film forming apparatus of the present invention, a two-layer film can be formed continuously. First, a CVD film is formed by using a film forming apparatus that can prevent plasma damage to a sample. Since the sample is not damaged by the plasma irradiation during the formation of the CVD film, a good interface between the CVD film and the sample is formed.

Next, electric field generating means other than the above, that is,
A sputtered film is formed using a parallel plate type electric field generating means. After the CVD film layer is formed in the first reaction chamber, the sample is transferred to a second reaction chamber provided separately in a vacuum state and sputtered, and when the sample is taken out from the second reaction chamber to the atmosphere,
Since the upper surface of the iO ₂ layer is entirely covered with the aluminum layer,
Since the area where the iO ₂ film comes into contact with the atmosphere is smaller than that without the sputtered film, the amount of water adsorbed on the CVD film is reduced. Therefore, V shown in the above equation (1)
The shift of fb from the theoretical value becomes small, and the threshold voltage of the manufactured semiconductor device becomes stable.

According to a second aspect of the present invention, an exhaust port is provided on both sides of the opening of the linear plasma generation chamber of the first reaction chamber of the first reaction chamber of the first embodiment, and an air flow is provided at the center of the opening of the plasma generation chamber. In contrast, control was made symmetrically, and the uniformity of the SiO ₂ film thickness distribution in the width direction of the sample was improved.

According to a third aspect of the present invention, there is provided the film forming apparatus, wherein a plurality of openings for controlling airflow are provided at an exhaust port provided on one side of the opening of the linear plasma generation chamber of the first reaction chamber. To improve the uniformity of the SiO ₂ film thickness distribution in the width direction of the sample.

According to a fourth aspect of the present invention, there is provided a film forming apparatus having a plurality of exhaust ports provided on both sides of an opening of a linear plasma generation chamber of the first reaction chamber for the purpose of controlling airflow. the closure part is provided, with improved homogeneity of the SiO ₂ film thickness distribution in the width direction of the sample.

[0021]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

Embodiment 1 FIG. 1 shows an apparatus for depositing SiO ₂ and aluminum according to Embodiment 1. FIG. 2 is a schematic diagram of a transmission cross section of the processing unit of the film forming chamber as viewed from above. Referring to these figures, the film forming apparatus includes a reaction chamber 1 including a plasma generation unit 3 and a plasma processing unit 4 and a reaction chamber 2 having parallel plate electrodes 5 and 6. The reaction chamber 1 and the reaction chamber 2 are made of aluminum, and are provided with exhaust ports 7 and 8 for evacuating each chamber. Pumps 9 and 10 for evacuating the reaction chamber 1 and the reaction chamber 2 are connected to the exhaust ports 7 and 8. The reaction chamber 1 and the reaction chamber 2 are connected in series via a partition valve 11. The partition valve 11 is made of aluminum and formed to be openable and closable, has a function as a passage in an open state, and has a function of closing the reaction chamber 1 and the reaction chamber 2 in a closed state. The sample 12 is placed in the reaction chamber 1 first.

A high-frequency power supply 1 for introducing high-frequency power for plasma generation is provided in a plasma generation section 3 of the reaction chamber 1.
3. A window 14 made of quartz glass is provided. Outside the quartz glass window 14, a resonator 15 for coupling high frequency power with plasma is arranged. Further, the plasma generating unit 3 is provided with a plasma forming gas supply system 16 and a reaction gas supply system 17. An exhaust port 7 is provided on one side of the opening 18 of the linear plasma generation unit 3.
By providing the exhaust port 7 on one side of the opening 18 of the plasma generating section 3, the airflow is controlled, and the film formation region is limited.

The inside of the reaction chamber 1 is evacuated by the pump 9, high frequency power is supplied to the resonator 15 using the high frequency power supply 13, and O ₂ gas is introduced from the plasma forming gas supply system 16 to generate plasma.

The sample 12 is supplied to the opening 18 of the plasma generator 3.
When the SiH ₄ gas is introduced from the reaction gas supply system 17, the oxygen radicals in the plasma have a longer lifetime than the ionic species, and therefore react with the SiH ₄ on the sample 12 to form the SiO ₂ film. Form. By bringing oxygen radicals and SiH ₄ into contact with the surface of the sample 12 in a line, and transporting the stage, an SiO ₂ film is formed on the entire surface of the sample 12. Next, the sample 12 is moved to the reaction chamber 2.

The reaction chamber 2 has parallel plate electrodes 5 and 6, an aluminum target 19, a high-frequency power supply 20 for introducing high-frequency power for plasma generation, and a plasma forming gas supply system 2.
1 is provided. The reaction chamber 2 is evacuated by the pump 21, Ar is introduced from the plasma forming gas supply system 21,
Plasma is formed, and an aluminum film is formed on the SiO ₂ film formed in the reaction chamber 1 by a sputtering method.

Embodiment 2 FIG. 3 shows an apparatus for depositing SiO ₂ and aluminum according to Embodiment 2. FIG. 4 is a schematic cross-sectional view of a processing section of the film forming apparatus shown in FIG. 3 as viewed from above.

Referring to these figures, the schematic structure of the film forming chamber is composed of a reaction chamber 22 having a plasma generating section 24 and a plasma processing section 25, and a reaction chamber 23 having parallel plate electrodes 26 and 27. I have. The reaction chamber 22 and the reaction chamber 23 are made of aluminum and have exhaust ports 28 and 2 for evacuating each chamber.
9 are provided. The reaction chamber 2 is provided at the exhaust ports 28 and 29.
2 and pumps 30, 4 for evacuating the reaction chamber 23
2 are connected. The reaction chamber 22 and the reaction chamber 23 are connected in series via a partition valve 32. The partition valve 32 is made of aluminum and is formed to be openable and closable, has a function as a passage in an open state, and has a function of closing the reaction chamber 22 and the reaction chamber 23 in a closed state. The sample 33 is first placed in the reaction chamber 22.

The plasma generation section 24 of the reaction chamber 22 is provided with a high-frequency power supply 34 for introducing high-frequency power for plasma generation and a window 35 made of quartz glass. Outside the quartz glass window 35, a resonator 36 for coupling high frequency power with plasma is provided. The plasma generating section 24 is provided with a plasma forming gas supply system 37 and a reaction gas supply system 38. Exhaust ports 28 are provided on both sides of the opening 39 of the linear plasma generator 24. Opening 3 of linear plasma generator 24 in reaction chamber 22
By providing exhaust ports 28 on both sides of 9, the airflow is controlled, and the film formation area of the sample 33 is limited.

The reaction chamber 22 is evacuated by the pump 30, high-frequency power is supplied to the resonator 36 using the high-frequency power supply 34, and O ₂ gas is introduced from the plasma forming gas supply system 37 to generate plasma. .

The sample 33 is placed in the opening 3 of the plasma generator 24.
9 and the introduction of SiH ₄ gas from the reaction gas supply system 38, the oxygen radicals in the plasma have a longer life than the ionic species, and thus react with the SiH ₄ on the sample 33 to form the SiO ₂ film. Form. By bringing oxygen radicals and SiH ₄ into contact with the surface of the sample 33 in a line shape and transporting the stage, an SiO ₂ film is formed on the entire surface of the sample 33. Next, the sample 33 is moved to the reaction chamber 23.

The reaction chamber 23 has parallel plate electrodes 26, 2
7, an aluminum target 40, a high frequency power supply 20 for introducing high frequency power for plasma generation, and a plasma forming gas supply system 42. Pumping the reaction chamber 23
, And Ar is introduced from the plasma forming gas supply system 42 to form plasma, and the Si formed in the reaction chamber 22 is formed.
An aluminum film is formed on the O ₂ film by a sputtering method.

Embodiment 3 FIG. 5 is a conceptual view of a SiO ₂ and aluminum film forming apparatus according to Embodiment 3. FIG. 6 is a schematic cross-sectional view of a processing section of the film forming apparatus as viewed from above.

Referring to these drawings, the schematic structure of the film forming apparatus is composed of a reaction chamber 43 having a plasma generation section 45 and a plasma processing section 46, and a reaction chamber 44 having parallel plate electrodes 47 and 48. I have. Reaction chamber 43 and reaction chamber 44
Is made of aluminum and has an exhaust port 49 for evacuating each room.
Pumps 51 and 52 for evacuating the reaction chamber 43 and the reaction chamber 44 are connected to the exhaust ports 49 and 50, respectively. The reaction chamber 43 and the reaction chamber 44
3 are connected in series. The partition valve 53 is made of aluminum and formed to be openable and closable, has a function as a passage in an open state, and has a function of closing the reaction chamber 43 and the reaction chamber 44 in a closed state. The sample 54 is first placed in the reaction chamber 43.

The plasma generation section 45 of the reaction chamber 43 is provided with a high frequency power supply 55 for introducing high frequency power for plasma generation and a window 56 made of quartz glass. Outside the quartz glass window 56, a resonator 55 for coupling high frequency power with plasma is provided. The plasma generating section 45 is provided with a plasma forming gas supply system 58 and a reaction gas supply system 59. An exhaust port 49 is provided on one side of the opening 60 of the linear plasma generation unit 45.

By providing an exhaust port 49 on one side of the opening 60 of the plasma generating section 45, the air flow is controlled,
The film formation region is limited. The exhaust port 49 is further provided with a plurality of closing portions 64 for the purpose of airflow control.
Thereby, the uniformity of the film thickness distribution in the width direction is improved. The inside of the reaction chamber 43 is evacuated by the pump 51, high frequency power is supplied to the resonator 57 using the high frequency power supply 55, and O ₂ gas is supplied from the plasma forming gas supply system 58 to generate plasma.

The sample 54 is placed in the opening 6 of the plasma generator 45.
0, and the SiH ₄ gas is introduced from the reaction gas supply system 59, the oxygen radicals in the plasma have a longer lifetime than the ionic species, and thus react with the SiH ₄ on the sample 54 to form an SiO ₂ film. To form By bringing oxygen radicals and SiH ₄ into contact with the surface of the sample 54 in a line, and transporting the stage, an SiO ₂ film is formed on the entire surface of the sample 54. Next, the sample 54 is moved to the reaction chamber 44.

In the reaction chamber 44, parallel plate electrodes 47, 48,
Aluminum target 61, high frequency power for plasma generation
High frequency power supply 62 for introduction, supply of plasma forming gas
A system 63 is provided. Reaction chamber 44 is pumped by pump 63
Empty and introduce Ar from the plasma forming gas supply system 63
To form plasma, and the SiO 2 formed in the reaction chamber 43 _Two
An aluminum film is formed on the film by a sputtering method.

Fourth Embodiment FIG. 7 shows an apparatus for forming a film of SiO ₂ and aluminum according to a fourth embodiment. FIG. 8 is a schematic diagram of a transmission cross section of the processing unit of the film forming apparatus viewed from above.

Referring to these figures, the film forming apparatus comprises a reaction chamber 6 comprising a plasma generating section 67 and a plasma processing section 68.
5 and a reaction chamber 66 having parallel plate electrodes 69 and 70. The reaction chamber 65 and the reaction chamber 66 are made of aluminum, and are provided with exhaust ports 71 and 72 for evacuating each chamber. Pumps 73 and 74 for evacuating the reaction chamber 65 and the reaction chamber 66 are connected to the exhaust ports 71 and 72, respectively. The reaction chamber 65 and the reaction chamber 66
5 are connected in series. The partition valve 75 is made of aluminum and is formed to be openable and closable, has a function as a passage in an open state, and has a function of closing the reaction chamber 65 and the reaction chamber 66 in a closed state. The sample 76 is first placed in the reaction chamber 65.

A high-frequency power source 7 for introducing high-frequency power for plasma generation is provided in a plasma generation section 67 of the reaction chamber 65.
7. A window 78 made of quartz glass is provided. Outside the quartz glass window 78, a resonator 79 for coupling high frequency power with plasma is provided. The plasma generating section 67 is provided with a plasma forming gas supply system 80 and a reaction gas supply system 81.

Exhaust ports 71 are provided on both sides of the opening 68 of the linear plasma generating section 67. Exhaust ports 7 are provided on both sides of the opening 68 of the linear plasma generating section 67 of the reaction chamber 65.
1, 71 are provided. By providing exhaust ports 71, 71 on both sides of the opening 68, airflow is controlled,
The film formation region of the sample 76 is limited. The inside of the reaction chamber 65 is evacuated by the pump 73, and the high frequency power supply 77 is supplied to the resonator 79.
The plasma is generated by supplying high-frequency electric power using O ₂ and introducing O ₂ gas from the plasma forming gas supply system 80. When the sample 76 is moved below the opening 82 of the plasma generation unit 67 and SiH ₄ gas is introduced from the reaction gas supply system 81, oxygen radicals in the plasma are
Due to its long life, it reacts with SiH ₄ on sample 76,
An SiO ₂ film is formed. Oxygen radicals and Si in a line
By bringing H ₄ into contact with the surface of the sample 76 and transporting the stage, an SiO ₂ film is formed on the entire surface of the sample 76.
Next, the sample 76 is moved to the reaction chamber 66.

In the reaction chamber 65, parallel plate electrodes 69, 70,
An aluminum target 83, a high frequency power supply 84 for introducing high frequency power for plasma generation, and a plasma forming gas supply system 85 are provided.

The reaction chamber 66 is evacuated by a pump 74, Ar is introduced from a plasma forming gas supply system 85 to form plasma, and an aluminum film is formed by sputtering on the SiO ₂ film formed in the reaction chamber 65. I do.

Although the embodiment of the present invention has been described above, the present invention is not limited to this, and it is possible to adopt an in-line system having a load lock chamber → CVD apparatus → sputter apparatus → rod lock chamber. Of course it is possible.

The present invention is summarized as follows. Referring to FIG. 1, the surface of sample 12 is first formed by a film forming apparatus according to claim 1 by using an electric field generating means provided in reaction chamber 1 so as not to cause irradiation damage to sample 12 by plasma. To form a SiO ₂ film. O ₂ gas is supplied from a plasma forming gas supply system 16 provided in the reaction chamber 1,
Oxygen radicals are formed by plasma. By supplying SiH ₄ gas from the reaction gas supply system 17 and reacting it with oxygen radicals, a SiO ₂ film is formed on the surface of the sample 12. Accordingly, the accumulation or trap occurrence of charges into inside the SiO ₂ layer of the gate insulating film by plasma irradiation can be suppressed, and the interface state of the Si layer interface of a semiconductor device of the lower layer of the SiO ₂ layer and the SiO ₂ layer The generation of the position can be suppressed. By providing the exhaust port 7 on one side of the opening 18 of the linear plasma generation chamber 33 of the reaction chamber 1, the airflow is controlled, and the film formation area of the sample 12 is limited.

After the CVD film layer is formed in the first reaction chamber 1, the sample 12 is transferred to a second reaction chamber 2 provided separately while keeping the vacuum state, and after sputtering, the sample 12 is taken out to the atmosphere to obtain SiO _2. The area where the layer is in contact with the atmosphere is reduced due to the presence of the sputtered film, and the amount of moisture adsorbed on the CVD film is also reduced. Accordingly, the shift from the theoretical value of Vfb shown in the above equation (1) becomes small, and the threshold voltage of the manufactured semiconductor device is stabilized.

Referring to FIG. 3, the film forming apparatus according to claim 2 first uses the electric field generating means provided in the reaction chamber 22 so as not to damage the sample 33 by irradiation with plasma. An SiO ₂ film is formed on the surface of the substrate 33. O ₂ gas is supplied from a plasma forming gas supply system 37 provided in the reaction chamber 22, and oxygen radicals are formed by plasma. By supplying SiH ₄ gas from the reaction gas supply system 38 and reacting it with oxygen radicals, SiO
_Two films are formed. Thereby, accumulation of electric charges or generation of traps inside the SiO ₂ layer of the gate insulating film due to plasma irradiation can be suppressed, and the interface between the SiO ₂ layer and the semiconductor layer below the SiO ₂ layer to the Si layer interface can be suppressed. Generation of a level can be suppressed.

By providing exhaust ports 28 on both sides of the opening 39 of the linear plasma generation chamber 24 of the reaction chamber 22, the airflow is controlled, and the film formation area of the sample 33 is limited.

After the CVD film layer is formed in the first reaction chamber 22, the sample is kept in a vacuum state while the second reaction chamber 2 is provided separately.
3 and after sputtering, take it out to the atmosphere,
The area where the SiO ₂ layer is in direct contact with the atmosphere is reduced due to the presence of the sputtered film, and the amount of moisture adsorbed on the CVD film is also reduced. Therefore, the shift from the theoretical value of Vfb shown in the equation (1) becomes small, and the threshold voltage of the manufactured semiconductor device is stabilized.

Referring to FIG. 5, the film forming apparatus according to claim 3 uses a radio wave generating means provided in the reaction chamber 43 so as not to damage the sample 54 by irradiation with plasma. An SiO ₂ film is formed on the surface of the substrate. O ₂ gas is supplied from a plasma forming gas supply system 58 provided in the reaction chamber 43, and oxygen radicals are formed by plasma. By supplying SiH ₄ gas from the reaction gas supply system 59 and reacting it with oxygen radicals, SiO
_Two films are formed. Thereby, accumulation of electric charges or generation of traps inside the SiO ₂ layer of the gate insulating film due to plasma irradiation can be suppressed, and the interface between the SiO ₂ layer and the semiconductor layer below the SiO ₂ layer to the Si layer interface can be suppressed. Generation of a level can be suppressed.

The exhaust port 49 of the reaction chamber 33 is provided with a plurality of openings 64 for controlling air flow. Thereby, the airflow is controlled, and the uniformity of the film thickness distribution in the width direction is improved.

After the CVD film layer is formed in the first reaction chamber 43, the sample 54 is transferred to a second reaction chamber 44 provided separately while keeping the vacuum state, and after sputtering, the sample 54 is taken out to the atmosphere to obtain SiO _2. The area where the layer is in direct contact with the atmosphere is reduced due to the presence of the sputtered film, and the amount of moisture adsorbed on the CVD film is also reduced. Therefore, the shift from the theoretical value of Vfb shown in the equation (1) becomes small, and the threshold voltage of the manufactured semiconductor device is stabilized.

Referring to FIG. 7, the film forming apparatus according to claim 4 first uses the electric field generating means provided in the reaction chamber 65 so as not to damage the sample 76 by irradiation with plasma. An SiO ₂ film is formed on the surface of the substrate. O ₂ gas is supplied from a plasma forming gas supply system 80 provided in the reaction chamber 65, and oxygen radicals are formed by plasma. By supplying SiH ₄ gas from the reaction gas supply system 81 and reacting it with oxygen radicals, SiO 2 is deposited on the surface of the sample 76.
_Two films are formed. Thereby, accumulation of electric charges or generation of traps inside the SiO ₂ layer of the gate insulating film due to plasma irradiation can be suppressed, and the interface between the SiO ₂ layer and the semiconductor layer below the SiO ₂ layer to the Si layer interface can be suppressed. Generation of a level can be suppressed.

By providing exhaust ports 71 on both sides of the opening 82 of the plasma generating section 67, the film formation region of the sample 76 is limited. The exhaust port 71 is provided with a plurality of closing parts 86 for the purpose of airflow control. Thereby, the airflow is controlled, and the uniformity of the film thickness distribution in the width direction is improved.

[0056] After forming the CVD layer in the first reaction chamber 65, while the sample 76 in a vacuum state, after the sputtering transferred into the second reaction chamber 66 which is provided separately, by taking in the air, SiO ₂ The area where the layer is in direct contact with the atmosphere is reduced due to the presence of the sputtered film, and the amount of moisture adsorbed on the CVD film is also reduced. Therefore, the shift from the theoretical value of Vfb shown in the equation (1) becomes small, and the threshold voltage of the manufactured semiconductor device is stabilized.

The embodiments disclosed this time are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a cross section as viewed from a side surface of a film forming apparatus according to a first embodiment.

FIG. 2 is a schematic view of a transmission section of the processing unit of the film forming apparatus shown in FIG. 1 as viewed from above.

FIG. 3 is a schematic diagram of a cross section as viewed from a side surface of a film forming apparatus according to a second embodiment.

FIG. 4 is a schematic cross-sectional view of a processing unit of a film forming apparatus according to a second embodiment, as viewed from above.

FIG. 5 is a schematic cross-sectional view of a film forming apparatus according to a third embodiment as viewed from the side.

FIG. 6 is a schematic diagram of a transmission section of a processing unit of a film forming apparatus according to a third embodiment as viewed from above.

FIG. 7 is a schematic cross-sectional view of a film forming apparatus according to a fourth embodiment as viewed from a side.

FIG. 8 is a schematic cross-sectional view of a processing section of a film forming apparatus according to a fourth embodiment as viewed from above.

FIG. 9 is a schematic view of a cross section viewed from the side of a conventional film forming apparatus.

FIG. 10 is a diagram showing a correlation curve between water in a SiO ₂ layer and Vfb.

[Explanation of symbols]

1 first reaction chamber, 2 second reaction chamber, 3 plasma generation section, 4 plasma processing section, 7 exhaust port, 18 opening.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA06 AA14 BA44 CA04 CA06 FA04 HA03 KA08 KA30 LA15 LA18 4M104 DD39 DD44 5F045 AA08 AA16 AA19 AB32 AB40 AC01 AC11 AF03 AF07 BB02 BB16 CA15 DQ15 EB08 EE20 A06 E06 A06 E06 A25 E08 BB09 BB36 BB47 BB49 DD27 HH03 HH04 LL13 RR06

Claims (4)

[Claims] A first reaction chamber including a plasma generation unit and a plasma processing unit for forming a CVD film, a second reaction chamber connected to the first reaction chamber and forming a sputtered film, A film forming apparatus comprising: an opening that connects the plasma generation unit and the plasma processing unit; and an exhaust port provided in the first reaction chamber and configured to exhaust an atmosphere in the first reaction chamber. 2. The film forming apparatus according to claim 1, wherein the exhaust ports are provided on both sides of the opening so as to sandwich the opening. 3. The film forming apparatus according to claim 1, wherein the opening is provided with an airflow control unit for controlling an airflow. 4. The film forming apparatus according to claim 2, wherein airflow control means for controlling an airflow is provided in each of said openings.