TW201834228A - 系統級封裝影像感測器 - Google Patents

系統級封裝影像感測器 Download PDF

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TW201834228A
TW201834228A TW106141083A TW106141083A TW201834228A TW 201834228 A TW201834228 A TW 201834228A TW 106141083 A TW106141083 A TW 106141083A TW 106141083 A TW106141083 A TW 106141083A TW 201834228 A TW201834228 A TW 201834228A
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image sensor
ceramic substrate
disposed
cavity
interposer
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TW106141083A
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TWI665794B (zh
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林蔚峰
黃吉志
李恩吉
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美商豪威科技股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

本發明揭示一種影像感測器封裝,其包含一陶瓷基板及安置於該陶瓷基板中之一空腔。一玻璃層黏附至該陶瓷基板且圍封該陶瓷基板中之該空腔。一影像感測器安置於該玻璃層與該陶瓷基板之間之該空腔中以電隔離該影像感測器。一影像感測器處理器安置於該空腔中且電耦合至該影像感測器以自該影像感測器接收影像資料。

Description

系統級封裝影像感測器
本發明大體上係關於半導體裝置封裝,且特定言之(但非排他性地)係關於影像感測器封裝。
影像感測器已變得無處不在。其廣泛應用於數位相機、蜂巢式電話、保全攝影機以及醫療、汽車及其他應用中。用於製造影像感測器之技術持續以迅猛之速度進步。舉例而言,對較高解析度及較低功耗之需求已促進此等裝置進一步小型化及整合。 典型影像感測器操作如下。來自一外部場景之影像光入射至影像感測器上。影像感測器包含複數個光敏元件,使得各光敏元件吸收入射影像光之一部分。包含於影像感測器中之光敏元件(諸如光電二極體)在吸收影像光之後各產生影像電荷。所產生之影像電荷量與影像光之強度成比例。所產生之影像電荷可用以產生表示外部場景之一影像。 為產生高品質影像,影像感測器需要被充分電隔離以防止非所要電畸變。習知封裝材料可能不具有現代感測器之充分絕緣性質。因此,可使用新封裝材料。
本文中描述用於一系統級封裝影像感測器之一設備及方法之實例。在以下描述中,闡述諸多特定細節以提供對實例之一透徹理解。然而,熟習相關技術者將認識到,可在不具有該等特定細節之一或多者之情況下或結合其他方法、組件、材料等等實踐本文中所描述之技術。在其他例項中,未詳細展示或描述眾所周知之結構、材料或操作以避免使某些態樣不清楚。 參考本說明書之「一實例」或「一實施例」意謂:結合該實例所描述之一特定特徵、結構或特性包含於本發明之至少一實例中。因此,出現於本說明書之各種位置中之片語「在一實例中」或「在一實施例中」未必係指相同實例。此外,特定特徵、結構或特性可以任何適合方式組合於一或多個實例中。 在本說明書中,使用若干技術術語。除非本文中有具體定義或其使用背景另有明確指示,否則此等術語具有其所在技術領域之一般意義。 圖1A係影像感測器封裝100A之一橫截面圖。影像感測器封裝100A包含陶瓷基板101、影像感測器103、特殊應用積體電路(ASIC) 105、影像感測器處理器107、組件109、玻璃層111、黏合劑113至117及接線119。熟習技術者應瞭解,根據本發明之教示,所描繪之諸多組件可代替其他組件。然而,與習知半導體封裝材料相比,陶瓷基板101可傳達更大電隔離及增強機械性質。 陶瓷基板101具有安置於其內之一空腔,且玻璃層111黏附至陶瓷基板101且圍封空腔。影像感測器103安置於玻璃層111與陶瓷基板101之間之空腔中,使得影像感測器103被電隔離。影像感測器處理器(ISP) 107安置於空腔中且電耦合至影像感測器103以自影像感測器103接收影像資料。在一實例中,ISP 107可將原始影像資料處理為可供一電子裝置使用之一資料類型,或甚至可藉由應用後影像效果(例如裁剪、旋轉、去除紅眼、調整亮度、調整對比度或其他方式)來操縱影像資料。如圖中所描繪,玻璃層111安置成接近影像感測器103之一照明側,且玻璃層111 (經由黏合劑113)膠合至陶瓷基板101之升高部分。換言之,在所描繪之實例中,玻璃層111膠合至空腔之壁上,使得影像感測器103與玻璃層111之間存在一氣隙或真空。影像感測器103亦包含複數個微透鏡,其等安置於影像感測器103之照明表面上,使得微透鏡安置於玻璃層111與影像感測器103之間。 在所描繪之實例中,特殊應用積體電路(ASIC) 105安置於陶瓷基板101中之空腔中,且取決於如何使用影像感測器封裝100A (例如蜂巢式電話、部分或完全自動控制汽車、電腦等等)而耦合至影像感測器103或影像感測器處理器107之至少一者。在一實例中,ASIC 105可包含場可程式化設計閘陣列。 圖1A中亦展示組件109,其可為用以控制影像感測器103之另一電路件或可控制供應至影像感測器103之電力。如圖中所描繪,ASIC 105、影像感測器103、影像感測器處理器107及組件109安置於陶瓷基板101上之空腔內之一水平面上。此外,陶瓷基板101包含安置於陶瓷基板101上之接觸墊;影像感測器103及影像感測器處理器107經由接線119線接合至接觸墊。 圖1B係一影像感測器封裝100B之一橫截面圖。影像感測器封裝100B在諸多方面類似於影像感測器封裝100A。然而,影像感測器封裝100B包含安置於陶瓷基板101之空腔中之凸緣,且中介層121安置於凸緣上,使得中介層121跨越凸緣之間之間隙。此外,影像感測器103、影像感測器處理器107及ASIC 105安置於中介層121上。如圖中所展示,影像感測器103及影像感測器處理器107安置於玻璃層111與中介層121之間;ASIC 105及組件109安置於陶瓷基板101與中介層121之間。在繪示性實例中,ASIC 105與ISP 107垂直對準,而組件109與影像感測器103垂直對準。取決於中介層121之所要性質,中介層121可為具有金屬組件123 (其可安置於兩個塑膠件之間)之塑膠或可包含矽。此外,可使用黏合劑131將中介層121安裝於凸緣上。在所描繪之實例中,金屬組件123可包含電互連件以將影像感測器103耦合至影像感測器處理器107及ASIC 105。 圖1C係根據本發明之教示之影像感測器封裝100C之一橫截面圖。影像感測器封裝100C在諸多方面類似於影像感測器封裝100A及100B。然而,不是將一中介層安置於凸緣上,而是將影像感測器103安置於凸緣上且使其跨越凸緣之間之一間隙。此外,影像感測器處理器107安置於陶瓷基板101上以介於影像感測器103與陶瓷基板101之間。換言之,影像感測器處理器107安置於兩個凸緣之間之一第二空腔中。影像感測器103在一垂直方向上安置於影像感測器處理器107與玻璃層111之間。如圖中所繪示,玻璃層111、影像感測器103及影像感測器處理器107經光學對準使得影像光被導引穿過玻璃層111,入射至影像感測器103上,且光被阻止到達影像感測器處理器107。在所描繪之實例中,使用黏合劑117將影像感測器處理器107黏附至陶瓷基板101。 圖2A至圖2E繪示根據本發明之教示之影像感測器封裝製造之一方法。一些或所有程序圖在方法中之呈現順序不應被視為限制。相反地,受益於本發明之一般技術者應瞭解,可依圖中未繪示之各種順序或甚至並行地執行方法之部分。此外,方法可省略某些圖以避免使某些態樣不清楚。替代地,方法可包含本發明之一些實施例/實例中未必需要之額外圖。 圖2A展示在陶瓷基板201中形成一空腔。此可包含:取一塊陶瓷且將一溝渠蝕刻至基板中。替代地,陶瓷可經壓製/燒結、注漿成型或其類似者以形成所要形狀。一般技術者應瞭解,可使用諸多技術及材料來形成陶瓷基板201。舉例而言,陶瓷基板201可包含鋁、矽、鋅或其類似者之氧化物。 圖2B繪示將特殊應用積體電路(ASIC) 205及組件209放入至陶瓷基板201中之空腔中。在所描繪之實例中,ASIC 205及組件209兩者可在底部上具有焊球且可耦合至陶瓷基板201上之電接點。 圖2C描繪將影像感測器203及影像感測器處理器207放至陶瓷基板201中之空腔中。在所描繪之實例中,影像感測器203及影像感測器處理器207線接合219至安置於陶瓷空腔上之電接點。如圖中所展示,ASIC 205、影像感測器203及影像感測器處理器207安置於空腔內之一水平面上。 圖2D展示將膠水213沈積於陶瓷基板201。在一實例中,膠水213可為環氧樹脂或其類似者。然而,在其他實例中,膠水213可為可光學或熱交聯的。 圖2E繪示將玻璃層211放置於膠水213上以將玻璃層211黏附至陶瓷基板201。因此,影像感測器處理器207及影像感測器203安置於玻璃層211與陶瓷基板201之間之空腔中。此囊封影像感測器203以允許有一電隔離且機械穩固之影像感測器封裝。 圖3A至圖3E繪示根據本發明之教示之影像感測器封裝製造之一方法。一些或所有程序圖在方法中之出現順序不應被視為限制。相反地,受益於本發明之一般技術者應瞭解,可依圖中未繪示之各種順序或甚至並行地執行方法之部分。此外,方法可省略某些圖以避免使某些態樣不清楚。替代地,方法可包含本發明之一些實施例/實例中未必需要之額外圖。 圖3A展示將一ASIC 305及組件309安裝至中介層321。取決於設計考量,中介層321可為具有金屬323之塑膠或為矽。 圖3B繪示將影像感測器303及影像感測器處理器307安裝於中介層321之對置側上。因此,影像感測器303及影像感測器處理器307安置於中介層321之照明側上,且ASIC 305及組件309安置於一非照明側上。所有上述組件可線接合319至中介層321。 圖3C描繪將中介層321黏附至陶瓷基板301。在所描繪之實例中,使用黏合劑331將中介層321黏附至陶瓷基板301。在一實例中,將一中介層321放至空腔中包含:將其放置於安置於陶瓷基板301中之空腔內之凸緣上。如圖中所展示,ASIC 305及組件309至少部分安置於安置於兩個凸緣之間之一第二空腔中。 圖3D展示將膠水313施加至陶瓷基板301之凸緣。可使用一自動膠水槍或任何其他設備來施配膠水313。 圖3E繪示使用膠水313將玻璃層311黏附至陶瓷基板301。 圖4繪示可含有圖1A至圖1C之影像感測器封裝401之至少部分自動控制之汽車400。在一實例中,汽車400可使用影像感測器401來自動停車。在其他實例中,汽車400可在很少人為干預或無人為干預之情況下自動駕駛。影像感測器401可將關於汽車400之位置之光學資訊中繼至汽車400內所含之處理器。此可允許汽車400在交通中準確地自定位。影像感測器封裝401之陶瓷外殼可使清晰影像獲取免受機械、化學及電磁干擾。例如,陶瓷及玻璃外殼可防止關鍵感測組件在一事故中受損壞,藉此允許汽車400仍自我操縱至路邊以免受傷害。此外,陶瓷封裝可有助於防止化學降解(例如,防止道路上之鹽分腐蝕連接)。 本發明之所繪示實例之以上描述(其包含[中文]中所描述之內容)不意欲具窮舉性或將本發明限制於所揭示之精確形式。儘管本文中出於繪示目的而描述本發明之特定實例,但熟習相關技術者將認識到,可在本發明之範疇內進行各種修改。 可鑑於以上詳細描述來對本發明作出此等修改。隨附申請專利範圍中所使用之術語不應被解釋為將本發明限制於本說明書中所揭示之特定實例。確切而言,本發明之範疇完全由根據申請專利範圍解譯之既定原則來解釋之隨附申請專利範圍判定。
100A‧‧‧影像感測器封裝
100B‧‧‧影像感測器封裝
100C‧‧‧影像感測器封裝
101‧‧‧陶瓷基板
103‧‧‧影像感測器
105‧‧‧特殊應用積體電路(ASIC)
107‧‧‧影像感測器處理器(ISP)
109‧‧‧組件
111‧‧‧玻璃層
113‧‧‧黏合劑
115‧‧‧黏合劑
117‧‧‧黏合劑
119‧‧‧接線
121‧‧‧中介層
123‧‧‧金屬組件
131‧‧‧黏合劑
201‧‧‧陶瓷基板
203‧‧‧影像感測器
205‧‧‧ASIC
207‧‧‧ISP
209‧‧‧組件
211‧‧‧玻璃層
213‧‧‧膠水
219‧‧‧線接合
301‧‧‧陶瓷基板
303‧‧‧影像感測器
305‧‧‧ASIC
307‧‧‧ISP
309‧‧‧組件
311‧‧‧玻璃層
313‧‧‧膠水
319‧‧‧線接合
321‧‧‧中介層
323‧‧‧金屬
331‧‧‧黏合劑
400‧‧‧汽車
401‧‧‧影像感測器封裝/影像感測器
參考下圖描述本發明之非限制性及非窮舉性實例,其中除非另有規定,否則所有各種視圖中之相同元件符號係指相同部件。 圖1A係根據本發明之教示之一影像感測器封裝之一橫截面圖。 圖1B係根據本發明之教示之一影像感測器封裝之一橫截面圖。 圖1C係根據本發明之教示之一影像感測器封裝之一橫截面圖。 圖2A至圖2E繪示根據本發明之教示之影像感測器封裝製造之一方法。 圖3A至圖3E繪示根據本發明之教示之影像感測器封裝製造之一方法。 圖4繪示根據本發明之教示之可含有圖1A至圖1C之影像感測器封裝之至少部分自動控制之一汽車。 所有若干視圖中之對應元件符號指示對應組件。熟習技術者應瞭解,圖中之元件出於簡單及清楚之目的而繪示且未必按比例繪製。舉例而言,圖中一些元件之尺寸可相對於其他元件放大以促進對本發明之各項實施例之理解。此外,為促進對本發明之此等各種實施例之較無礙觀察,通常不描繪在一商業上可行之實施例中有用或必需之常見且眾所周知元件。

Claims (19)

  1. 一種影像感測器封裝,其包括: 一陶瓷基板,其具有安置於該陶瓷基板中之一空腔; 一玻璃層,其黏附至該陶瓷基板且圍封該陶瓷基板中之該空腔; 一影像感測器,其安置於該玻璃層與該陶瓷基板之間之該空腔中以電隔離該影像感測器;及 一影像感測器處理器,其安置於該空腔中且電耦合至該影像感測器以自該影像感測器接收影像資料。
  2. 如請求項1之影像感測器封裝,其中該玻璃層安置成接近該影像感測器之一照明側,且其中該玻璃層膠合至該陶瓷基板之升高部分。
  3. 如請求項2之影像感測器封裝,其中該影像感測器包含安置於該影像感測器之一照明表面上且安置於該玻璃層與該影像感測器之間之複數個微透鏡。
  4. 如請求項1之影像感測器封裝,其進一步包括安置於該陶瓷基板中之該空腔中且耦合至該影像感測器或該影像感測器處理器之至少一者之一特殊應用積體電路。
  5. 如請求項4之影像感測器封裝,其進一步包括: 凸緣,其等安置於該陶瓷基板之該空腔中;及 一中介層,其安置於該等凸緣上,該中介層跨越該等凸緣之間之一間隙,其中該影像感測器、該影像感測器處理器及該特殊應用積體電路安置於該中介層上。
  6. 如請求項5之影像感測器封裝,其中該影像感測器及該影像感測器處理器安置於該玻璃層與該中介層之間,且其中該特殊應用積體電路安置於該陶瓷基板與該中介層之間。
  7. 如請求項6之影像感測器封裝,其中該中介層包含用以將該影像感測器耦合至該影像感測器處理器及該特殊應用積體電路之電互連件,且其中該中介層附接至該等凸緣。
  8. 如請求項1之影像感測器封裝,其進一步包括安置於該陶瓷基板之該空腔中之凸緣,其中該影像感測器安置於該等凸緣上且跨越該等凸緣之間之一間隙,且其中該影像感測器處理器安置於該陶瓷基板上以介於該影像感測器與該陶瓷基板之間,且其中該影像感測器安置於該影像感測器處理器與該玻璃層之間。
  9. 如請求項1之影像感測器封裝,其進一步包括安置於該陶瓷基板上之接觸墊,其中該影像感測器及該影像感測器處理器線接合至該等接觸墊。
  10. 如請求項1之影像感測器封裝,其中該影像感測器封裝包含於至少部分自動控制之一汽車中。
  11. 一種影像感測器封裝製造方法,其包括: 在一陶瓷基板中形成一空腔; 將一影像感測器放至該陶瓷基板中之該空腔中; 將一影像感測器處理器放至該陶瓷基板中之該空腔中; 將該影像感測器及該影像感測器處理器線接合至電接點; 將膠水沈積於該陶瓷基板上;及 將一玻璃層放置於該膠水上以將該玻璃層黏附至該陶瓷基板,其中該影像感測器處理器及該影像感測器安置於該玻璃層與該陶瓷基板之間之該空腔中。
  12. 如請求項11之方法,其進一步包括:將一特殊應用積體電路放至該陶瓷基板中之該空腔中,且將該特殊應用積體電路線接合至該等電接點。
  13. 如請求項12之方法,其中該特殊應用積體電路、該影像感測器及該影像感測器處理器安置於該空腔內之一水平面上。
  14. 如請求項11之方法,其進一步包括:將一中介層放至該空腔中,其中該空腔包含凸緣且其中該中介層附接至該陶瓷基板之該等凸緣。
  15. 如請求項14之方法,其中將該影像感測器及該影像感測器處理器放至該空腔中包含:將該影像感測器及該影像感測器處理器線接合至該中介層且將該中介層放至該空腔中。
  16. 如請求項15之方法,其中該影像感測器及該影像感測器處理器安置於該中介層之一照明側上,且其中一特殊應用積體電路安置於與該照明側對置之該中介層之一暗側上。
  17. 如請求項16之方法,其中該中介層包含矽。
  18. 如請求項11之方法,其中該空腔包含凸緣,且其中該影像感測器放置於該等凸緣上,使得該影像感測器安置於該玻璃層與該影像感測器處理器之間,其中該影像感測器處理器安置於該陶瓷基板之一平坦表面上。
  19. 如請求項11之方法,其中線接合包含:線接合至安置於該陶瓷基板中之該空腔中之接觸墊。
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