TW201833271A - Sheet, tape, and method of manufacturing semiconductor apparatus - Google Patents

Abstract

The invention relates to a sheet, a tape, and a method of manufacturing a semiconductor apparatus and provides a sheet which has excellent expansion cutting precision. The sheet includes a cutting film, which includes a base material and a binder layer thereon. The sheet also includes a film on the binder layer. In the sheet, the thickness of the binder layer is 2-10 [mu]m and the thickness of the film is 5-20 [mu]m.

Description

Sheet, tape and method for manufacturing semiconductor device

The present disclosure relates to a method for manufacturing a sheet, an adhesive tape, and a semiconductor device.

In recent years, semiconductor devices of flip chip packages have been widely used. A semiconductor device of a flip chip package is a semiconductor device in which a semiconductor wafer is fixed to a substrate such that a circuit surface of the semiconductor wafer and an electrode forming surface of the substrate are opposed to each other. In such a semiconductor device, the back surface of a semiconductor wafer may be protected by a back surface protective film.

The method for forming a semiconductor wafer is generally dicing with a blade. However, in the dicing with a blade, a crack called a chipping angle sometimes occurs on the side of the semiconductor wafer. This crack is enlarged by heating in a packaging step, a reliability test, and the like, and causes a failure rate to increase.

The chipping angle can be reduced by stealth dicing (registered trademark). Stealth dicing is a method of forming a modified layer on a semiconductor wafer using a laser, bonding the semiconductor wafer to a dicing film, and dividing the semiconductor wafer into wafer sizes by expanding the dicing film.

In the case of stealth dicing, when a back protective film is used, the following steps (hereinafter referred to as "previous steps") are sometimes performed: the back protective film is bonded to a semiconductor wafer, the back protective film is thermally cured, and The laser forms a modified layer on a semiconductor wafer, attaches the semiconductor wafer with a back surface protective film to a dicing film, and expands to form a wafer with a back surface protective film after division. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2016-115943 [Patent Literature 2] Japanese Patent Laid-Open Publication No. 2015-99825 [Patent Literature 3] Japanese Patent Laid-Open Publication No. 2014-185285 [Patent Literature 4] Japanese Patent Special Publication No. 2010-199541

[Problems to be Solved by the Invention] However, sometimes the back surface protective film cannot be divided along the contour of the wafer by expansion. The smaller the wafer size, the lower the accuracy of the segmentation. With the development of miniaturization of the wafer, the division accuracy of the back protective film should be improved.

An object of the present disclosure is to provide a sheet excellent in division accuracy at the time of expansion. It is also an object of the present disclosure to provide a method of manufacturing an adhesive tape and a semiconductor device. [Means for solving problems]

The sheet of the present disclosure includes a dicing film including a substrate layer and an adhesive layer on the substrate layer. The sheet of the present disclosure also includes a film on the adhesive layer. In the sheet of the present disclosure, the thickness of the adhesive layer is 2 μm to 10 μm, and the thickness of the film is 5 μm to 20 μm. The sheet of the present disclosure may be a sheet for use in a method of manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes a step of fixing a semiconductor wafer having a modified region on a film of a sheet of the present disclosure, and a step of dividing the semiconductor wafer by expanding the dicing film with the modified region as a starting point.

In the present disclosure, since the upper limit of the thickness of the adhesive layer is 10 μm and the upper limit of the film thickness is 20 μm, the film can be divided along the contour of the wafer. Therefore, it can be used not only for dividing conventional wafers (for example, 4 mm square wafers), but also for small wafers (for example, 1 mm square wafers). In addition, since the lower limit of the thickness of the adhesive layer is 2 μm, it is possible to prevent the convex portion of the substrate laminated flower (emboss) from protruding from the adhesive layer, and to suppress the adhesive layer caused by the protrusion of the substrate laminated flower convex portion. Decrease in interface adhesive force with the film. In addition, since the lower limit of the thickness of the film is 5 μm, it is possible to prevent the printing laser from penetrating the film when the film is used for semiconductor back surface protection. In addition, since the film is integrated with the dicing film, the number of man-hours can be reduced compared to the previous step.

In the sheet of the present disclosure, the elongation at break of the film at 0 ° C is preferably 20% or less.

For the sheet of the present disclosure, the comparison of the -15 ° C elongation at break with respect to the 25 ° C elongation at break of the dicing film is preferably 0.3 or more and less than 1.

Preferably, both sides of the substrate layer are defined by a first main surface and a second main surface, the adhesive layer is located on the first main surface, and the surface roughness of the first main surface is greater than the surface roughness of the second main surface. The surface roughness of the second main surface is preferably 200 nm or less.

The film is preferably a semiconductor back surface protective film.

The substrate layer preferably contains an ethylene-vinyl acetate copolymer layer.

The adhesive tape of the present disclosure includes a release liner and a sheet on the release liner.

The method for manufacturing a semiconductor device of the present disclosure includes a step of fixing a semiconductor wafer having a modified region on a film of a sheet, and a step of dividing the semiconductor wafer with the modified region as a starting point by expanding the dicing film.

Embodiment 1 and Embodiment 2 are described below to describe the present disclosure in detail, but the present disclosure is not limited to these embodiments. In Embodiment 1, a film "means for solving a problem" is used as a semiconductor back surface protective film. In Embodiment 2, a film "means for solving a problem" is used as a wafer bonding film.

Embodiment 1 In Embodiment 1, a film "means for solving a problem" is used as a semiconductor back surface protective film.

As shown in FIG. 1, the adhesive tape 1 includes a release liner 13 and sheets 71 a, 71 b, 71 c,..., 71 m (hereinafter, collectively referred to as “sheet 71”) on the release liner 13. The adhesive tape 1 may have a roll shape. The distance between the pieces 71a and 71b, the distance between the pieces 71b and 71c, ... the distance between the pieces 71l and 71m are fixed.

The release liner 13 has a band shape. The release liner 13 is, for example, a polyethylene terephthalate (PET) film.

As shown in FIG. 2, the sheet 71 includes a dicing film 12. The dicing film 12 has a disk shape.

The elongation at break of the dicing film 12 at -15 ° C is, for example, 450% or more. The upper limit of the elongation at break at -15 ° C is, for example, 550%. The "elongation at break" at -15 ° C was determined by the following formula. Elongation at break = (distance between chucks at break-distance between chucks before stretching) / distance between chucks before stretching × 100

The elongation at break of the dicing film 12 at 25 ° C. is, for example, 550% or more. The upper limit of the elongation at break at 25 ° C is, for example, 600%. The "elongation at break" at 25 ° C was determined by the following formula. Elongation at break = (distance between chucks at break-distance between chucks before stretching) / distance between chucks before stretching × 100

For the cutting film 12, the ratio of the elongation at break at -15 ° C to the elongation at break at 25 ° C (elongation at break at -15 ° C / elongation at break at 25 ° C) is preferably 0.3 or more, more preferably 0.5 or more, and even more It is preferably 0.7 or more. When it is less than 0.3, the dicing film 12 may crack during cold expansion (for example, expansion under an environment of -15 ° C). Even if the dicing film 12 is not cracked, there is a tendency that the thermal shrinkage performance of the dicing film 12 is deteriorated. When the heat shrinkability is insufficient, it is difficult to maintain the slit width. The comparison is preferably less than 1.

The dicing film 12 includes a base material layer 121. The base material layer 121 has a disk shape. The thickness of the base material layer 121 is, for example, 50 μm to 150 μm. Both surfaces of the substrate layer 121 may be defined by a first main surface and a second main surface. The first main surface of the base material layer 121 is in contact with the adhesive layer 122. The first main surface of the base material layer 121 may be an embossed surface. The surface roughness of the first main surface of the base material layer 121 is preferably larger than the surface roughness of the second main surface of the base material layer 121. The surface roughness of the first principal surface of the base material layer 121 is, for example, 500 nm to 1500 nm. The surface roughness of the second main surface of the base material layer 121 is preferably 200 nm or less. "Surface roughness" is the arithmetic average roughness Ra. Regarding the "surface roughness", a laser microscope "apparatus name: OPTICS 3CCD COLOR CONFOCAL MICRO SCOPE H300 (Laser Tec)" was used, and the depth of the focal point focused on the surface of the base material layer 121 was set at a depth of 50 times at a magnification of 50 times. Scan within a direction of ± 15 μm to calculate Ra.

The base material layer 121 includes an ethylene-vinyl acetate copolymer (hereinafter referred to as "EVA") layer. The base material layer 121 may include a single EVA layer. The base material layer 121 may include an EVA layer and a plastic layer other than the EVA layer. The base material layer 121 preferably has a property of transmitting energy rays.

The dicing film 12 includes an adhesive layer 122. The adhesive layer 122 has a disk shape. The thickness of the adhesive layer 122 is 2 μm to 10 μm. If it is less than 2 μm, there is a risk that the wafer may peel during expansion. It is considered that this is because the embossed convex portion of the first main surface of the base material layer 121 protrudes from the adhesive layer 122, and the protrusion of the embossed convex portion reduces the adhesive force at the interface between the adhesive layer 122 and the semiconductor back surface protective film 11. . When the adhesive layer 122 is smaller than 2 μm, the adhesive layer 122 may not be able to fill the embossing of the first main surface of the base material layer 121. In this case, the laser printing performance is poor. This is considered to be because the void at the interface between the adhesive layer 122 and the base material layer 121 lowered the laser transmittance. On the other hand, when the thickness of the adhesive layer 122 is more than 10 μm, the splitability tends to deteriorate. That is, there is a tendency that the semiconductor back surface protective film 11 is not divided along the contour of the wafer. Both sides of the adhesive layer 122 may be defined by a first main surface and a second main surface. The first main surface of the adhesive layer 122 is in contact with the first layer 111 of the semiconductor back surface protective film 11. The second main surface of the adhesive layer 122 is in contact with the base material layer 121. The adhesive constituting the adhesive layer 122 is, for example, an acrylic adhesive or a rubber adhesive. Among these, an acrylic adhesive is preferable. The acrylic adhesive may be, for example, an acrylic adhesive (a homopolymer or a copolymer) using one or two or more (meth) acrylic acid alkyl esters as monomer components as a base polymer.

The adhesive layer 122 may include a first portion 122A. The first portion 122A may be disk-shaped. The first portion 122A is in contact with the semiconductor back surface protective film 11. The first portion 122A is harder than the second portion 122B. The first portion 122A may be cured by energy rays. The adhesive layer 122 may further include a second portion 122B surrounding the first portion 122A. The second portion 122B may be in the shape of an annular plate. The second portion 122B may have a property of being cured by energy rays. Examples of the energy rays include ultraviolet rays. The second portion 122B may include a ring-shaped plate-shaped first region and a ring-shaped plate-shaped second region surrounding the first region. The first region of the second portion 122B is in contact with the semiconductor back surface protective film 11. On the other hand, the second region of the second portion 122B is not in contact with the semiconductor back surface protective film 11.

The sheet 71 includes a semiconductor back surface protective film 11. The semiconductor back surface protective film 11 has a disk shape. Both sides of the semiconductor back surface protective film 11 may be defined by a first main surface and a second main surface. The first main surface of the semiconductor back surface protective film 11 is in contact with the release liner 13. The second main surface of the semiconductor back surface protective film 11 is in contact with the adhesive layer 122.

The thickness of the semiconductor back surface protective film 11 is 5 μm to 20 μm. If it is less than 5 μm, the printed laser may penetrate the semiconductor back surface protective film 11 and damage the wafer. On the other hand, when the thickness of the semiconductor back surface protective film 11 is more than 20 μm, the segmentability tends to deteriorate.

The elongation at break of the semiconductor back surface protective film 11 at 0 ° C is preferably 20% or less. When it is more than 20%, there is a tendency that the separability in an environment of -15 ° C is deteriorated. The "elongation at break" is determined by the following formula. Elongation at break = (distance between chucks at break-distance between chucks before stretching) / distance between chucks before stretching × 100

The semiconductor back surface protective film 11 includes a first layer 111 and a second layer 112. The first layer 111 is located between the adhesive layer 122 and the second layer 112. The second layer 112 is located between the release liner 13 and the first layer 111.

The semiconductor back surface protective film 11 includes a first layer 111. The first layer 111 is disc-shaped. Both sides of the first layer 111 may be defined by a first main surface and a second main surface. The first main surface of the first layer 111 is in contact with the second layer 112. The second main surface of the first layer 111 is in contact with the adhesive layer 122. The thickness of the first layer 111 is, for example, 5 μm to 10 μm.

The first layer 111 is preferably a cured layer. The first layer 111 can be cured by heating during film formation. The first layer 111 may be a layer for adding a mark with a laser.

The first layer 111 is preferably colored. When the first layer 111 is colored, the dicing film 12 and the semiconductor back surface protective film 11 may be simply distinguished in some cases. The first layer 111 is preferably a dark color such as black, blue, or red. Particularly preferred is black. This is because it is easy to visually recognize the laser mark.

Dark color basically means: L ^* a ^* b ^* L ^* specified in the color system is 60 or less (0 to 60) [preferably 50 or less (0 to 50), more preferably 40 or less (0 to 40)] of darker colors.

In addition, black basically means that: L ^* a ^* b ^* L ^* specified in the color system is 35 or less (0 to 35) [preferably 30 or less (0 to 30), and more preferably 25 or less (0 ~ 25)] black color. It should be noted that, in black, a ^* and b ^* specified in the L ^* a ^* b ^* color system can be appropriately selected according to the value of L ^* . As for a ^* and b ^* , for example, both are preferably -10 to 10, more preferably -5 to 5, and particularly preferably a range of -3 to 3 (especially 0 or close to 0).

It should be noted that L ^* , a ^* , b ^* specified in the L ^* a ^* b ^* color system can be performed by using a color difference meter (trade name "CR-200", manufactured by Minolta; color difference meter). Measure and calculate. It should be noted that the L ^* a ^* b ^* color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, which refers to the color space known as the CIE1976 (L ^* a ^* b ^* ) color system . In addition, JIS Z 8729 in the Japanese Industrial Standard specifies the L ^* a ^* b ^* color system.

The first layer 111 may include a resin component. The content of the resin component in the first layer 111 is preferably 30% by weight or more, and more preferably 40% by weight or more. The content of the resin component in the first layer 111 is preferably 80% by weight or less, and more preferably 70% by weight or less.

The resin component may contain a thermoplastic resin and a thermosetting resin before curing. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, and more preferably 20% by weight or more. The upper limit of the content of the thermoplastic resin in 100% by weight of the resin component is, for example, 70% by weight, preferably 50% by weight, and more preferably 40% by weight. The content of the thermosetting resin in 100% by weight of the resin component is preferably 30% by weight or more, and more preferably 50% by weight or more. The upper limit of the content of the thermosetting resin in 100% by weight of the resin component is, for example, 90% by weight, preferably 80% by weight, and more preferably 70% by weight.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, neoprene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as nylon 6 or nylon 66, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) or PBT ( Saturated polyester resins such as polybutylene terephthalate), polyamidamine and imine resins, or fluororesins. The thermoplastic resin can be used alone or in combination of two or more. Among these, an acrylic resin is preferable.

Examples of the thermosetting resin include epoxy resin, phenol resin, amine-based resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. The thermosetting resin can be used alone or in combination of two or more. As the thermosetting resin, an epoxy resin containing an ionic impurity or the like that seldom corrodes a semiconductor wafer is particularly preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin can be used preferably.

The epoxy resin is not particularly limited, and examples thereof include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, and hydrogenated resin. Bisphenol A epoxy resin, bisphenol AF epoxy resin, biphenyl epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, phenol novolac epoxy resin, o-cresol novolac ring Epoxy resin, trihydroxyphenylmethane epoxy resin, tetrahydroxyphenylethane epoxy resin and other bifunctional epoxy resins or polyfunctional epoxy resins; or hydantoin type epoxy resin, isocyanuric acid Epoxy resins such as triglycidyl epoxy resin and glycidylamine epoxy resin.

The first layer 111 may include an epoxy resin that is liquid at 25 ° C and an epoxy resin that is solid at 25 ° C before curing. In this case, the operability is excellent. The value of the ratio of the liquid epoxy resin to the solid epoxy resin is, for example, 0.4 or more, preferably 0.6 or more, more preferably 0.8 or more, and still more preferably 1.0 or more. Here, the ratio of the liquid epoxy resin to the solid epoxy resin is a weight ratio of the liquid epoxy resin content to the solid epoxy resin content.

Phenol resin is a substance that functions as a curing agent for epoxy resins. Examples include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, third butyl novolac resin, and nonylphenol novolac Novolac phenol resins such as resins; resole phenol resins; polyhydroxystyrenes such as polyparahydroxystyrene. A phenol resin can be used individually or in combination of 2 or more types. Among these phenol resins, phenol novolak resin and phenol aralkyl resin are particularly preferred.

Regarding the blending ratio of the epoxy resin and the phenol resin, the blending ratio is preferably, for example, 1 equivalent to the epoxy group in the epoxy resin so that the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalent. More preferably, it is 0.8 to 1.2 equivalents.

The first layer 111 may include a thermal curing promoting catalyst before curing. Examples thereof include amine-based curing accelerators, phosphorus-containing curing accelerators, imidazole-based curing accelerators, boron-containing curing accelerators, and phosphorus-boron-based curing accelerators. The content of the thermal curing acceleration catalyst is, for example, 5 to 15 parts by weight based on 100 parts by weight of the resin component.

The first layer 111 may include a filler. An inorganic filler is preferred. Inorganic fillers are, for example, silicon dioxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, Palladium, solder, etc. The filler can be used alone or in combination of two or more. Among them, silicon dioxide is preferred, and fused silicon dioxide is particularly preferred. The average particle diameter of the inorganic filler is preferably in a range of 0.1 μm to 80 μm. The average particle diameter of the inorganic filler can be measured using, for example, a laser diffraction type particle size distribution measuring device.

The content of the filler in the first layer 111 is preferably 10% by weight or more, more preferably 20% by weight or more, and still more preferably 30% by weight or more. On the other hand, the content of the filler in the first layer 111 is preferably 70% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.

The first layer 111 preferably contains a colorant. The colorant is, for example, a dye or a pigment. Among these, a dye is preferable, and a black dye is more preferable. The content of the coloring agent in the first layer 111 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and even more preferably 2% by weight or more before curing. The content of the coloring agent in the first layer 111 is preferably 10% by weight or less, more preferably 8% by weight or less, and still more preferably 5% by weight or less before curing.

The first layer 111 may contain other additives as appropriate. Examples of the other additives include a flame retardant, a silane coupling agent, an ion trapping agent, an extender, an anti-aging agent, an antioxidant, and a surfactant.

The semiconductor back surface protective film 11 includes a second layer 112. The second layer 112 is disc-shaped. Both sides of the second layer 112 may be defined by a first main surface and a second main surface. The first main surface of the second layer 112 is in contact with the release liner 13. The second main surface of the second layer 112 is in contact with the first layer 111. The thickness of the second layer 112 is, for example, 5 μm to 10 μm.

The second layer 112 may have thermosetting property. The second layer 112 may be an uncured layer.

The second layer 112 may be colored. When the second layer 112 is colored, the dicing film 12 and the semiconductor back surface protective film 11 may be simply distinguished in some cases. The second layer 112 is preferably a dark color such as black, blue, or red. Particularly preferred is black. This is because it is easy to visually recognize the laser mark. The preferred range of L ^* specified in the L ^* a ^* b ^* color system is the same as the preferred range of L ^* in the first layer 111.

The second layer 112 may include a resin component. The content of the resin component in the second layer 112 is preferably 30% by weight or more, and more preferably 40% by weight or more. The content of the resin component in the second layer 112 is preferably 80% by weight or less, and more preferably 70% by weight or less.

The resin component may include a thermoplastic resin and a thermosetting resin. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, and more preferably 20% by weight or more. The upper limit of the content of the thermoplastic resin in 100% by weight of the resin component is, for example, 70% by weight, preferably 50% by weight, and more preferably 40% by weight. The content of the thermosetting resin in 100% by weight of the resin component is preferably 30% by weight or more, and more preferably 50% by weight or more. The upper limit of the content of the thermosetting resin in 100% by weight of the resin component is, for example, 90% by weight, preferably 80% by weight, and more preferably 70% by weight.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, neoprene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as nylon 6 or nylon 66, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) or PBT ( Saturated polyester resins such as polybutylene terephthalate), polyamidamine and imine resins, or fluororesins. These thermoplastic resins can be used alone or in combination of two or more. Among these, an acrylic resin is preferable.

Examples of the thermosetting resin include epoxy resin, phenol resin, amine-based resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. The thermosetting resin can be used alone or in combination of two or more. As the thermosetting resin, an epoxy resin containing an ionic impurity or the like that seldom corrodes a semiconductor wafer is particularly preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin can be used preferably.

The epoxy resin is not particularly limited, and examples thereof include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, and hydrogenated resin. Bisphenol A epoxy resin, bisphenol AF epoxy resin, biphenyl epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, phenol novolac epoxy resin, o-cresol novolac ring Epoxy resin, trihydroxyphenylmethane epoxy resin, tetrahydroxyphenylethane epoxy resin and other bifunctional epoxy resins or polyfunctional epoxy resins; or hydantoin type epoxy resin, isocyanuric acid Epoxy resins such as triglycidyl epoxy resin and glycidylamine epoxy resin.

The second layer 112 may include an epoxy resin that is liquid at 25 ° C and an epoxy resin that is solid at 25 ° C. In this case, the operability is excellent. The value of the ratio of the liquid epoxy resin to the solid epoxy resin is, for example, 0.4 or more, preferably 0.6 or more, more preferably 0.8 or more, and still more preferably 1.0 or more. Here, the ratio of the liquid epoxy resin to the solid epoxy resin is a weight ratio of the liquid epoxy resin content to the solid epoxy resin content.

Phenol resin is a substance that functions as a curing agent for epoxy resins. Examples include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, third butyl novolac resin, and nonylphenol novolac Novolac phenol resins such as resins; resole phenol resins; polyhydroxystyrenes such as polyparahydroxystyrene. A phenol resin can be used individually or in combination of 2 or more types. Among these phenol resins, phenol novolak resin and phenol aralkyl resin are particularly preferred.

Regarding the blending ratio of the epoxy resin and the phenol resin, the blending ratio is preferably, for example, 1 equivalent to the epoxy group in the epoxy resin so that the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalent. More preferably, it is 0.8 to 1.2 equivalents.

The second layer 112 is preferably free of a thermal curing accelerator. The thermal curing acceleration catalyst is, for example, an amine-based curing accelerator, a phosphorus-containing curing accelerator, an imidazole-based curing accelerator, a boron-containing curing accelerator, or a phosphorus-boron-based curing accelerator.

The second layer 112 may include a filler. An inorganic filler is preferred. Inorganic fillers are, for example, silicon dioxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, Palladium, solder, etc. The filler can be used alone or in combination of two or more. Among them, silicon dioxide is preferred, and fused silicon dioxide is particularly preferred. The average particle diameter of the inorganic filler is preferably in a range of 0.1 μm to 80 μm. The average particle diameter of the inorganic filler can be measured, for example, by a laser diffraction type particle size distribution measuring device.

The content of the filler in the second layer 112 is preferably 10% by weight or more, more preferably 20% by weight or more, and still more preferably 30% by weight or more. The content of the filler in the second layer 112 is preferably 70% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.

The second layer 112 may include a colorant. The colorant is, for example, a dye or a pigment. Among these, a dye is preferable, and a black dye is more preferable. The content of the toner in the second layer 112 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and even more preferably 2% by weight or more. The content of the coloring agent in the second layer 112 is preferably 10% by weight or less, more preferably 8% by weight or less, and still more preferably 5% by weight or less.

The second layer 112 may contain other additives as appropriate. Examples of the other additives include a flame retardant, a silane coupling agent, an ion trapping agent, an extender, an anti-aging agent, an antioxidant, and a surfactant.

The sheet 71 can be used for manufacturing a semiconductor device. From here, a method for manufacturing a semiconductor device will be described.

As shown in FIG. 3, the light-condensing point is aligned with the inside of the semiconductor wafer 4P before irradiation, and the laser light 100 is irradiated along the grid-like planned division line 4L. Semiconductor wafer 4. Examples of the pre-irradiation semiconductor wafer 4P include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. Examples of the compound semiconductor wafer include a gallium nitride wafer.

The irradiation conditions of the laser light 100 can be appropriately adjusted within a range of the following conditions, for example. (A) Laser light 100 Laser light source Semiconductor laser excitation Nd: YAG laser wavelength 1064nm Laser spot cross-sectional area 3.14 × 10 ^-8 cm ² Oscillation mode Q switching pulse repetition frequency below 100kHz Pulse width below 1μs Output power below 1mJ Laser quality TEM00 Polarization characteristics Linearly polarized light (B) Condensing lens with a magnification of 100 times or less Numerical aperture (NA) 0.55 Transmittance to a laser wavelength of 100% or less (C) A semiconductor wafer 4P before irradiation Settable moving speed below 280mm / s

As shown in FIG. 4, the semiconductor wafer 4 includes a modified region 41. The modified region 41 is more brittle than other regions. The semiconductor wafer 4 further includes semiconductor wafers 4A, 4B, 4C,..., 4F.

As shown in FIG. 5, the release liner 13 is removed from the adhesive tape 1, and the semiconductor wafer 4 heated by the heating stage is fixed to the semiconductor back surface protective film 11 of the sheet 71 with a roller. The semiconductor wafer 4 is fixed at, for example, a temperature of 40 ° C or higher, preferably 45 ° C or higher, more preferably 50 ° C or higher, and even more preferably 55 ° C or higher. The semiconductor wafer 4 is fixed at, for example, a temperature of 100 ° C or lower, preferably 90 ° C or lower. The fixing pressure of the semiconductor wafer 4 is, for example, 1 × 10 ⁵ Pa to 1 × 10 ⁷ Pa. The roll speed is, for example, 10 mm / second.

By heating the sheet 71 with the semiconductor wafer 4, the second layer 112 of the semiconductor back surface protective film 11 is adhered to the semiconductor wafer 4. Heating is performed, for example, at a temperature of 70 ° C or higher, preferably 75 ° C or higher. The upper limit of the heating temperature is, for example, 85 ° C. Heating is performed, for example, for 30 minutes or more. The upper limit of the heating time is, for example, 60 minutes.

The first layer 111 of the semiconductor back surface protective film 11 is irradiated with a laser through the dicing film 12, and a mark is added to the first layer 111. The laser can be a gas laser, a solid laser, a liquid laser, or the like. The gas laser is, for example, a carbon dioxide gas laser (CO ₂ laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser, etc.). The solid-state laser is, for example, a YAG laser (Nd: YAG laser, etc.), or a YVO ₄ laser.

As shown in FIG. 6, the cutting film 12 is pushed up by the push-up tool 33 to expand the cutting film 12. The expansion temperature is preferably 10 ° C or lower, and more preferably 0 ° C or lower. The lower limit of the temperature is, for example, -20 ° C.

The expansion of the dicing film 12 divides the semiconductor wafer 4 with the modified region 41 as a starting point, and also divides the semiconductor back surface protective film 11. As a result, a semiconductor wafer 4A with a divided semiconductor back surface protective film 11A is formed on the dicing film 12.

As shown in FIG. 7, the push-up tool 33 is lowered. As a result, slack is generated in the dicing film 12. Slack is generated between the wafer fixing area of the dicing film 12 and the dicing ring fixing area.

As shown in FIG. 8, the dicing film 12 is expanded by pushing it on the adsorption table 32, and the dicing film 12 is suction-fixed to the adsorption table 32 while maintaining the expansion.

As shown in FIG. 9, the suction stage 32 is lowered while the dicing film 12 is suction-fixed to the suction stage 32.

In a state where the dicing film 12 is suction-fixed to the adsorption table 32, hot air is blown to the slack portion of the dicing film 12 to remove the slack. The temperature of the hot air is preferably 170 ° C or higher, and more preferably 180 ° C or higher. The upper limit of the hot air temperature is, for example, 240 ° C, and preferably 220 ° C.

The adhesive layer 122 is irradiated with ultraviolet rays to cure the adhesive layer 122.

The semiconductor wafer 4A with the divided semiconductor back surface protective film 11A is peeled from the dicing film 12.

As shown in FIG. 10, the semiconductor wafer 4A with the semiconductor back surface protective film 11A after the division is fixed to the adherend 6 by a flip-chip bonding method (flip-chip packaging method). Specifically, the semiconductor wafer 4A with the divided semiconductor back surface protective film 11A is fixed to the adherend 6 such that the circuit surface of the semiconductor wafer 4A faces the adherend 6. For example, the bump 51 of the semiconductor wafer 4A is brought into contact with the conductive material (solder or the like) 61 of the adherend 6 and the conductive material 61 is melted while being pressed. A gap exists between the semiconductor wafer 4A and the adherend 6. The height of the void is usually about 30 μm to about 300 μm. After fixing, it is possible to perform cleaning such as voids.

As the adherend 6, a substrate such as a lead frame or a circuit board (such as a printed circuit board) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.

The material of the bump or the conductive material is not particularly limited, and examples thereof include tin-lead metal materials, tin-silver metal materials, tin-silver-copper metal materials, tin-zinc metal materials, and tin. -Zinc-bismuth metal materials such as solders (alloys); gold metal materials; copper metal materials. In addition, the temperature at the time of melting of the conductive material 61 is usually about 260 ° C.

The gap between the semiconductor wafer 4A and the adherend 6 is sealed with a sealing resin. The sealing resin is usually cured by heating at 175 ° C for 60 seconds to 90 seconds.

The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin). The sealing resin is more preferably an insulating resin having elasticity. Examples of the sealing resin include a resin composition containing an epoxy resin. In addition, as the sealing resin based on a resin composition containing an epoxy resin, in addition to the epoxy resin, a thermosetting resin (such as a phenol resin), a thermoplastic resin, or the like other than the epoxy resin may be included as a resin component. In addition, a phenol resin can also be used as a hardening | curing agent of an epoxy resin. The shape of the sealing resin is a film shape, a tablet shape, or the like.

The semiconductor device (flip-chip packaged semiconductor device) obtained by the above method includes an adherend 6 and a semiconductor wafer 4A with a divided semiconductor back surface protective film 11A fixed to the adherend 6.

A semiconductor device packaged in a flip chip package is thinner and smaller than a semiconductor device packaged in a joint package. Therefore, it can be suitably used as various electronic devices, electronic parts, or materials and components thereof. Specifically, as an electronic device using a semiconductor device in a flip chip package, a so-called "mobile phone", "PHS (Personal Handy-phone System)", a small computer (such as a so-called "PDA" (portable information terminal), so-called "laptop computer", so-called "Net Book (netbook) (trademark)", "so-called" wearable computer ", etc.), integrating" mobile phone "and computer Small electronic devices, so-called "Digital Cameras (trademarks)", so-called "digital cameras", small TVs, small game consoles, small digital audio players, so-called "electronic notebooks", so-called " "Electronic dictionary", so-called "electronic book" electronic device terminals, small digital watches and other portable electronic devices (portable electronic devices), etc., of course, other than mobile (installation type) electronic devices (Such as so-called "desktop computers", slim TVs, recording / playback electronics (hard disk recorders, DVD players, etc. , A projector, a micromachine, etc.). In addition, as the electronic component, or the material and component of the electronic device / electronic component, for example, a component of a so-called "CPU", a component of various storage devices (so-called "memory", a hard disk, etc.), and the like can be cited.

Modification 1 As shown in FIG. 11, the semiconductor back surface protective film 11 is a single layer. A preferred constituent component of the semiconductor back surface protective film 11 is the same as a preferred constituent component of the second layer 112. The preferred content of the constituent components of the semiconductor back surface protective film 11 is the same as the preferred content of the constituent components of the second layer 112.

The first portion 122A of the adhesive layer 122 according to the modification 2 has a property of being cured by energy rays. The second portion 122B of the adhesive layer 122 also has a property of being cured by energy rays. In the modification 2, after the step of forming the semiconductor wafer 4A with the divided semiconductor back surface protective film 11A, the adhesive layer 122 is irradiated with energy rays to pick up the semiconductor wafer 4A with the divided semiconductor back surface protective film 11A. Since the energy ray is irradiated, it is easy to pick up the semiconductor wafer 4A with the semiconductor back surface protective film 11A after the division.

The first portion 122A of the adhesive layer 122 according to Modification 3 is cured by energy rays. The second portion 122B of the adhesive layer 122 is also cured by energy rays.

The entire first main surface of the adhesive layer 122 in the modification 4 is in contact with the semiconductor back surface protective film 11.

(Others) Modifications 1 to 4 and the like can be arbitrarily combined.

As described above, the method for manufacturing a semiconductor device according to the first embodiment includes the steps of fixing the semiconductor wafer 4 having the modified region 41 to the semiconductor back surface protective film 11 of the sheet 71, and expanding the dicing film 12 to form the modified region 41. The step of dividing the semiconductor wafer into four as a starting point. The method for manufacturing a semiconductor device according to the first embodiment further includes heating the sheet 71 with the semiconductor wafer 4 between the step of fixing the semiconductor wafer 4 to the semiconductor back surface protective film 11 and the step of dividing the semiconductor wafer 4. step.

The method for manufacturing a semiconductor device according to the first embodiment further includes a step of peeling the semiconductor wafer 4A with the semiconductor back surface protective film 11A after the division formed from the dicing film 12 formed in the step of dividing the semiconductor wafer 4. Between the step of fixing the semiconductor wafer 4 to the semiconductor back surface protective film 11 and the step of peeling the semiconductor wafer 4A with the semiconductor back surface protective film 11A separated from the dicing film 12, the method for manufacturing a semiconductor device according to the first embodiment does not include : A step of curing the semiconductor back surface protective film 11.

Embodiment 2 In Embodiment 2, a film "means for solving a problem" is used as a wafer bonding film.

As shown in FIG. 12, the adhesive tape 1 of the second embodiment includes a wafer bonding film 11 instead of the semiconductor back surface protective film 11. The thickness of the wafer bonding film 11 is the same as the thickness of the semiconductor back surface protective film 11 in the first embodiment. The preferable physical properties (for example, elongation at break) of the wafer bonding film 11 are the same as those of the semiconductor back surface protective film 11 in the first embodiment. A preferred constituent component of the wafer bonding film 11 is the same as a preferred constituent component of the second layer 112 in the first embodiment. The preferable content of the component in the wafer bonding film 11 is the same as the preferable content of the component in the second layer 112 in the first embodiment.

As shown in FIG. 13, a semiconductor wafer 4A with a wafer bonding film 11A after division is formed. This forming step is the same as the forming step of the semiconductor wafer 4A with the divided semiconductor back surface protective film 11A (see FIGS. 3 to 9).

As shown in FIG. 14, the semiconductor wafer 4A with the divided wafer bonding film 11A is crimped to the adherend 6, and the divided wafer bonding film 11A is cured.

As shown in FIG. 15, the electrode pads of the semiconductor wafer 4A are electrically connected to the terminal portions of the adherend 6 with the bonding wires 7, and the semiconductor wafer 4A is sealed with the sealing resin 8.

As described above, the method of manufacturing a semiconductor device according to the second embodiment includes the steps of fixing the semiconductor wafer 4 having the modified region 41 to the wafer bonding film 11 of the sheet 71, and expanding the dicing film 12 to form the modified region 41. The step of dividing the semiconductor wafer into four as a starting point. The method for manufacturing a semiconductor device according to the first embodiment further includes a step of peeling the semiconductor wafer 4A with the wafer bonding film 11A after the division, which is formed in the step of dividing the semiconductor wafer 4 from the dicing film 12. [Example]

Hereinafter, preferred embodiments of the present invention will be described in detail exemplarily. However, the materials, preparation amounts, and the like described in these examples are not intended to limit the scope of the present invention to these examples unless there is any particular limitation.

The raw materials and chemical reagents are shown below. Acrylate copolymer (manufactured by Nagase ChemteX, SG-P3) Epoxy resin 1 (manufactured by Nippon Kayaku Co., Ltd., EPPN-501HY) Epoxy resin 2 (manufactured by Toto Kasei Co., Ltd., KI-3000-4) Epoxy resin 3 ( Mitsubishi Chemical Corporation, jER YL980) Phenolic resin 1 (manufactured by Meiwa Chemical Co., Ltd., MEH7851-H) Phenol resin 2 (manufactured by Meiwa Chemical Co., Ltd., MEH7851-SS) Filler (manufactured by Yaduma Corporation, SO-25R, average particle size is 0.5 μm spherical silica) dye (OI BLACK BS, manufactured by ORIENT Chemical Industry Co., Ltd.) catalyst (made by Shikoku Chemical Co., Ltd., CUREZOL 2PZ)

Production of dicing membrane A reaction vessel having a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device was charged with 100 parts by weight of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") and 2-hydroxyethyl acrylate (Hereinafter referred to as "HEA".) 19 parts by weight, 0.4 parts by weight of benzamidine peroxide, and 80 parts by weight of toluene were polymerized in a nitrogen stream at 60 ° C for 10 hours to obtain an acrylic polymer A. 12 parts by weight of 2-methacryloxyethyl isocyanate (hereinafter referred to as "MOI") was added to the acrylic polymer A, and an addition reaction treatment was performed in an air stream at 50 ° C for 60 hours. To obtain an acrylic polymer A '. Next, 0.75 parts by weight of a polyisocyanate compound (trade name "Coronate L", manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (Irgacure 651, Ciba Specialty Chemicals) were added to 100 parts by weight (solid content) of the acrylic polymer A '. Production) 2 parts by weight, toluene was added so that the solid content concentration was 28%, and a binder solution was obtained. The adhesive solution was applied to the silicone-treated surface of the PET release liner, and dried at 120 ° C. for 2 minutes to form an adhesive layer. Next, an EVA film was bonded to the exposed surface of the adhesive layer and stored at 23 ° C. for 72 hours to obtain a dicing film.

Production of a dicing film-integrated semiconductor back surface protective film in Examples 1 to 5 and Comparative Examples 1 to 8 The raw materials and chemical reagents were dissolved in methyl ethyl ketone according to Table 1, and a solution of a resin composition having a solid content concentration of 28% by weight was prepared. A solution of the resin composition was applied to a release liner (a polyethylene terephthalate film having a thickness of 50 μm after silicone release treatment), and dried at 130 ° C. for 2 minutes to obtain a semiconductor back surface protective film. The semiconductor back surface protective film was laminated on the adhesive layer of the dicing film by a manual roller, thereby obtaining a dicing film-integrated semiconductor back surface protective film.

Structure 1 to 8, dicing film integrated semiconductor back surface protective films of Examples 1 to 5 and Comparative Examples Examples 1 to 5 and the structure of FIG Comparative Examples 1 to 8 of the dicing film integrated semiconductor back surface protection film 11 The structure shown is the same. The dicing film-integrated semiconductor back surface protective film of Examples 1 to 5 and Comparative Examples 1 to 8 includes a dicing film and a semiconductor back surface protective film on an adhesive layer of the dicing film. The dicing film includes an EVA film and an adhesive layer.

Production of the dicing film-integrated semiconductor back surface protective film in Examples 6 to 9 The raw materials and chemical reagents were dissolved in methyl ethyl ketone according to Table 1 to prepare a solution of the resin composition having a solid content concentration of 28% by weight. The solution was applied to a release liner and dried at 130 ° C. for 2 minutes to obtain a laser marking layer (hereinafter, sometimes referred to as “LM layer”). A wafer patch layer (hereinafter, sometimes referred to as a "WM layer") is produced by the same steps as a laser marking layer. The laser marking layer and the wafer patch layer were laminated using a laminator under conditions of 100 ° C. and 0.6 MPa to obtain a semiconductor back surface protective film. The semiconductor back surface protective film was laminated on the adhesive layer of the dicing film by a manual roller, thereby obtaining a dicing film-integrated semiconductor back surface protective film.

The same configuration as the rear surface of the semiconductor integrated Examples 6 to 9 back surface of the semiconductor integrated dicing film embodiment of the dicing film protective film 6 to 9, the structure of the protective film structure embodiment shown in FIG. 2 and FIG. The dicing film-integrated semiconductor back surface protective film of Examples 6 to 9 includes a dicing film and a semiconductor back surface protective film located on an adhesive layer of the dicing film. The dicing film includes an EVA film and an adhesive layer. The semiconductor back surface protective film includes a laser marking layer and a wafer patch layer. The laser marking layer corresponds to the first layer 111 of FIG. 2. The wafer patch layer corresponds to the second layer 112 of FIG. 2.

Thickness measurement The dicing film-integrated semiconductor back surface protective film was freeze-cut, and a cross-section observation was performed with a microscope "VHX-2000 (manufactured by KEYENCE)" to measure the thickness of each layer. The thickness of the thickest part in each layer is shown in Tables 1 and 2.

Measurement of Elongation of Semiconductor Backside Protective Film The semiconductor backside protective film of the dicing film-integrated semiconductor backside protective film was peeled off, and a test piece having a width of 25 mm was cut out of the semiconductor backside protective film. The test piece was set in a tensile tester "AUTOGRAPH AG-X (manufactured by Shimadzu Corporation)" so that the distance between the chucks was 100 mm, and the test piece was pulled at a speed of 50 mm / min in an atmosphere of 0 ° C, and the measurement was complete The amount of elongation at break was determined by the following formula. According to this formula, when the distance between the chucks at the time of breaking is 200 mm, the elongation reaches 100%. (Distance between chucks at break-distance between chucks before stretching) / distance between chucks before stretching × 100

Measurement of Elongation of Dicing Film The dicing film of the dicing film-integrated semiconductor back surface protective film was peeled off, and a test piece having a width of 10 mm was cut out of the dicing film. The test piece was set in a tensile tester "AUTOGRAPH AG-X (manufactured by Shimadzu Corporation)" so that the distance between the chucks was 50 mm, and the tensile test was performed at a speed of 300 mm / min in an atmosphere of 25 ° C or -15 ° C The elongation at the time of complete fracture was measured, and the "elongation" was determined by the following formula. According to this formula, when the distance between the chucks at the time of breaking is 100 mm, the elongation reaches 100%. (Distance between chucks at break-distance between chucks before stretching) / distance between chucks before stretching × 100

Laser printability evaluation: A semiconductor back surface protective film (wafers in Examples 6 to 9) were bonded to a dicing film-integrated semiconductor back surface protective film using a laminator under conditions of a temperature of 80 ° C and 0.15 MPa. Patch layer). A laser marking device "MD-S9910" (manufactured by KEYENCE) was used to protect the semiconductor backside protective film through a dicing film under the conditions of a laser power of 0.23W, a marking speed of 300mm / sec, and a frequency of 10kHz. 6 to 9 are laser marking layers) irradiate the laser. A case where a through-hole was formed in the semiconductor back surface protective film by laser irradiation was marked as X, and a case where no through-hole was formed was marked as ○.

Evaluation of cracking of dicing film A 12-inch wafer having a thickness of 300 μm was cut into a wafer size of 3 mm square, and the diced wafer was bonded to a dicing film-integrated semiconductor using a laminator at a temperature of 80 ° C and 0.15 MPa Protective film for semiconductor back surface. Using an expander "DDS2300 (manufactured by DISCO Corporation)", it was cooled at -15 ° C for 2 minutes, and expanded under the conditions of a push-up amount of 15 mm and a push-up speed of 150 mm / second, and held in this state for 1 minute. The presence or absence of cracks in the dicing film was observed. A case where cracks were present in the dicing film was designated as X, and a case where no crack was present was designated as ○.

Evaluation of slicability: A 12-inch wafer having a thickness of 300 μm was cut into a wafer size of 3 mm square, and the wafer after the dicing was bonded to a dicing film-integrated semiconductor backside protection using a laminator at a temperature of 80 ° C. and 0.15 MPa. Film for semiconductor backside protection film. Using a dilator "DDS2300 (manufactured by DISCO Corporation)", it was cooled at -15 ° C for 2 minutes, and expanded under the conditions of a push-up amount of 15 mm and a push-up speed of 150 mm / second, and was maintained in this state for 1 minute. . Release the expansion, and push it up again under the conditions of 15mm push-up speed and 1mm / sec push-up speed. The distance between the cutting film and the heater is 20mm, the rotation speed is 5 ° / sec, and 200 ° C. The push-up area of the cutting film is heated to shrink it. After that, the quadrangular contact areas in the semiconductor back surface protective film that were in contact with the wafer were observed. It was observed whether each of the four line segments constituting the outline of the contact area extends along the wafer. The division ratio is calculated by the following formula. A case where the division ratio is 90% or more is referred to as A, a case where the division ratio is less than 90% and 70% is referred to as B, and a case where the division ratio is less than 70% and 50% or more is described. For C, let D be the case where the division rate is less than 50% and 30% or more, and let E be the case where the division rate is less than 30%. The case where the wafer was peeled from the dicing film due to expansion was recorded as ×. Segmentation rate = number of line segments extending along the wafer / number of all line segments × 100

[Table 1]

[Table 2]

1‧‧‧Tape

4‧‧‧ semiconductor wafer

4A, 4B, 4C, ..., 4F ‧‧‧ semiconductor wafer

4L‧‧‧ divided scheduled line

4P‧‧‧Semiconductor wafer before irradiation

6‧‧‧ Adhesive

7‧‧‧ welding wire

8‧‧‧sealing resin

11‧‧‧Semiconductor back protection film

11A‧‧‧Semiconductor back protective film

12‧‧‧ cutting film

13‧‧‧ Release liner

32‧‧‧ adsorption station

33‧‧‧ Push Up Tool

41‧‧‧ Modified Area

51‧‧‧ bump

61‧‧‧Conductive material

71, 71a, 71b, 71c, ..., 71m

100‧‧‧laser light

111‧‧‧first floor

112‧‧‧The second floor

121‧‧‧ substrate layer

122‧‧‧Adhesive layer

122A‧‧‧Part I

122B‧‧‧Part Two

FIG. 1 is a schematic plan view of the adhesive tape in the first embodiment. FIG. 2 is a schematic partial cross-sectional view of the adhesive tape in Embodiment 1. FIG. 3 is a schematic perspective view of a manufacturing process of the semiconductor device in the first embodiment. 4 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in the first embodiment. 5 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in the first embodiment. 6 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in the first embodiment. 7 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in the first embodiment. 8 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in the first embodiment. 9 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in the first embodiment. FIG. 10 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in the first embodiment. FIG. 11 is a schematic cross-sectional view of a sheet in Modification 1. FIG. FIG. 12 is a schematic partial cross-sectional view of an adhesive tape in Embodiment 2. FIG. FIG. 13 is a schematic cross-sectional view of a manufacturing process of the semiconductor device in the second embodiment. 14 is a schematic cross-sectional view of a manufacturing process of a semiconductor device in a second embodiment. 15 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the second embodiment.

Claims (8)

A sheet comprising: a cutting film including a substrate layer and an adhesive layer on the substrate layer; and a film on the adhesive layer; wherein the thickness of the adhesive layer is 2 μm to 10 μm The thickness of the film is 5 μm to 20 μm, and the sheet is a sheet used in a method of manufacturing a semiconductor device, and the method of manufacturing the semiconductor device includes: fixing the film on the sheet with a modified And a step of dividing the semiconductor wafer with the modified region as a starting point by expanding the dicing film. The sheet according to claim 1, wherein the elongation at break of the film at 0 ° C. is 20% or less. The sheet according to item 1 of the scope of patent application, wherein the ratio of the -15 ° C breaking elongation to the 25 ° C breaking elongation of the dicing film is 0.3 or more and less than 1. The sheet according to item 1 of the patent application scope, wherein both sides of the base material layer are defined by a first main surface and a second main surface, an adhesive layer is located on the first main surface, and the first main surface is The surface roughness of the surface is greater than the surface roughness of the second main surface, and the surface roughness of the second main surface is 200 nm or less. The sheet according to claim 1, wherein the film is a semiconductor back surface protective film. The sheet according to claim 1, wherein the substrate layer includes an ethylene-vinyl acetate copolymer layer. An adhesive tape comprising: a release liner; and the sheet according to any one of claims 1 to 6 on the release liner. A method for manufacturing a semiconductor device, comprising: a step of fixing the semiconductor wafer having the modified region on the film of the sheet according to any one of claims 1 to 7 of the patent application scope; And a step of dividing the semiconductor wafer by expanding the dicing film with the modified region as a starting point.