JP5612747B2 - Semiconductor device manufacturing film, semiconductor device manufacturing film manufacturing method, and semiconductor device manufacturing method. - Google Patents

Description

  The present invention relates to a film for manufacturing a semiconductor device, a method for manufacturing a film for manufacturing a semiconductor device, and a method for manufacturing a semiconductor device.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. Therefore, a flip chip type semiconductor device in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connection) is widely used as a semiconductor device and its package. The flip chip connection is fixed in such a manner that the circuit surface of the semiconductor chip faces the electrode forming surface of the substrate. In such a semiconductor device or the like, the back surface of the semiconductor chip may be protected by a protective film to prevent the semiconductor chip from being damaged.

JP 2008-166451 A JP 2008-006386 A Japanese Patent Laid-Open No. 2007-261035 JP 2007-250970 A JP 2007-158026 A Japanese Patent Laid-Open No. 2004-221169 JP 2004-214288 A JP 2004-142430 A JP 2004-072108 A JP 2004-063551 A

  The present inventors have examined a film that protects the back surface of the semiconductor chip. As a result, using a film for manufacturing semiconductor devices in which a dicing tape with an adhesive layer laminated on the dicing tape is laminated on the separator at a predetermined interval, the film is attached to the back surface of the semiconductor chip. Invented a method to do this.

  The dicing tape with an adhesive layer is subjected to pre-cut processing that is processed in advance into the shape (for example, circular shape) of a semiconductor wafer to be bonded. And the said dicing tape with an adhesive bond layer peels from a separator in the case of bonding to a semiconductor wafer. However, depending on the physical properties of the dicing tape with an adhesive layer, the conditions of the apparatus, and the like, a new problem has arisen that the dicing tape with an adhesive layer may not be preferably peeled from the separator.

  The present invention has been made in view of the above problems, and an object thereof is a semiconductor device in which a dicing tape with an adhesive layer in which an adhesive layer is laminated on a dicing tape is laminated on a separator at a predetermined interval. In a manufacturing film, a semiconductor device manufacturing film capable of suitably peeling a dicing tape with an adhesive layer from a separator, a manufacturing method thereof, and a semiconductor device manufacturing method using the semiconductor device manufacturing film There is to do.

  The inventors of the present application have studied a film for manufacturing a semiconductor device in order to solve the conventional problems. As a result, by adopting the following configuration, it was found that the dicing tape with an adhesive layer can be suitably peeled from the separator, and the present invention has been completed.

  That is, the film for manufacturing a semiconductor device according to the present invention includes a dicing tape with an adhesive layer in which an adhesive layer is laminated on a dicing tape, with the adhesive layer as a bonding surface and a separator at a predetermined interval. The separator is a film for manufacturing a semiconductor device, wherein the separator has a cut along an outer periphery of the dicing tape, and the depth of the cut is 2/3 or less of the thickness of the separator. And

  According to the said structure, the said separator is notched along the outer periphery of the said dicing tape. Therefore, it is possible to easily peel the dicing tape with an adhesive layer from the separator from the notch. In addition, since the depth of the cut is 2/3 or less of the thickness of the separator, when the dicing tape with an adhesive layer is about to be peeled from the separator, the separator is prevented from tearing from the cut portion. be able to. As a result, the dicing tape with an adhesive layer can be suitably peeled off (seated) from the separator.

  Further, in the method for manufacturing a film for manufacturing a semiconductor device according to the present invention, a dicing tape with an adhesive layer in which an adhesive layer is laminated on a dicing tape is laminated on a separator with the adhesive layer as a bonding surface. A step of preparing a film with a separator, and a step of cutting the film with a separator into a size corresponding to a semiconductor wafer to be attached; the cutting is performed from the dicing tape side to the thickness of the separator. It is characterized by carrying out to a depth of 2/3 or less.

  According to the above configuration, when the film with a separator is cut into a size corresponding to a semiconductor wafer to be attached, the cutting is performed from the dicing tape side to a depth of 2/3 or less of the thickness of the separator. Done. As a result, the manufactured semiconductor device manufacturing film has a slit formed in the separator along the outer periphery of the dicing tape, and the depth of the notch is 2/3 or less of the thickness of the separator. Become. Therefore, the film for manufacturing a semiconductor device manufactured by the method for manufacturing a film for manufacturing a semiconductor device according to the present invention can easily peel the dicing tape with an adhesive layer from the separator, starting from the notch. In addition, since the depth of the cut is 2/3 or less of the thickness of the separator, when the dicing tape with an adhesive layer is about to be peeled from the separator, the separator is prevented from tearing from the cut portion. be able to. As a result, the dicing tape with an adhesive layer can be suitably peeled off (seated) from the separator.

  A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device using the film for manufacturing a semiconductor device described above, the step of peeling a separator from the film for manufacturing a semiconductor device, and the bonding And a step of adhering a semiconductor wafer onto the agent layer.

  Since the semiconductor device manufacturing method according to the present invention uses the semiconductor device manufacturing film described above, the depth of cut into the separator is 2/3 or less of the thickness of the separator. Therefore, when the dicing tape with the adhesive layer is peeled from the separator, the separator can be prevented from tearing from the cut portion, and the semiconductor wafer can be suitably stuck on the adhesive layer. It becomes.

  The film for manufacturing a semiconductor device according to the present invention is a film for manufacturing a semiconductor device in which a dicing tape is laminated on a separator at a predetermined interval, and the separator is notched along an outer periphery of the dicing tape. And the depth of the notch is 2/3 or less of the thickness of the separator.

  According to the said structure, the said separator is notched along the outer periphery of the said dicing tape. Therefore, it is possible to easily peel the dicing tape from the separator from the notch. In addition, since the depth of the cut is 2/3 or less of the thickness of the separator, it is possible to prevent the separator from tearing from the cut portion when the dicing tape is peeled from the separator. As a result, the dicing tape can be suitably peeled off from the separator.

  The method for manufacturing a film for manufacturing a semiconductor device according to the present invention includes a step of preparing a film with a separator in which a dicing tape and a separator are laminated, and a size corresponding to the semiconductor wafer to be attached. A step of cutting the film, wherein the cutting is performed from the dicing tape side to a depth of 2/3 or less of the thickness of the separator.

  According to the above configuration, when the film with a separator is cut into a size corresponding to a semiconductor wafer to be attached, the cutting is performed from the dicing tape side to a depth of 2/3 or less of the thickness of the separator. Done. As a result, the manufactured semiconductor device manufacturing film has a slit formed in the separator along the outer periphery of the dicing tape, and the depth of the notch is 2/3 or less of the thickness of the separator. Become. Therefore, the film for manufacturing a semiconductor device manufactured by the method for manufacturing a film for manufacturing a semiconductor device according to the present invention can easily peel the dicing tape from the separator from the notch. In addition, since the depth of the cut is 2/3 or less of the thickness of the separator, it is possible to prevent the separator from tearing from the cut portion when the dicing tape is peeled from the separator. As a result, the dicing tape can be suitably peeled off from the separator.

  A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device using the film for manufacturing a semiconductor device described above, the step of peeling a separator from the film for manufacturing a semiconductor device, and the dicing. And a step of adhering a semiconductor wafer onto a tape.

Since the semiconductor device manufacturing method according to the present invention uses the semiconductor device manufacturing film described above, the depth of cut into the separator is 2/3 or less of the thickness of the separator. Therefore, when the dicing tape is peeled from the separator, the separator can be prevented from tearing from the cut portion, and the semiconductor wafer can be suitably adhered on the adhesive layer.
Furthermore, the present invention provides the following.
(1) A method of manufacturing a film for manufacturing a semiconductor device,
The semiconductor device manufacturing film is:
(A) A dicing tape with an adhesive layer in which an adhesive layer is laminated on a dicing tape is laminated on a separator at a predetermined interval with the adhesive layer as a bonding surface,
(B) The separator has a cut along the outer periphery of the dicing tape,
(C) The depth of the notch is 2/3 or less of the thickness of the separator,
(D) The adhesive layer is added with a colorant, and is adhered to the back surface of a semiconductor chip included in a flip-chip mounted semiconductor device;
The manufacturing method of the film for manufacturing a semiconductor device is as follows:
A step of preparing a film with a separator in which a dicing tape with an adhesive layer in which an adhesive layer to which a colorant is added is laminated on a dicing tape is laminated on the separator with the adhesive layer as a bonding surface;
Cutting the film with a separator into a size corresponding to a semiconductor wafer to be attached; and
The said cutting is performed from the said dicing tape side to the depth of 2/3 or less of the thickness of the said separator, The manufacturing method of the film for semiconductor device manufacture characterized by the above-mentioned.
(2) A method of manufacturing a semiconductor device using a film for manufacturing a semiconductor device,
The semiconductor device manufacturing film is:
(A) A dicing tape with an adhesive layer in which an adhesive layer is laminated on a dicing tape is laminated on a separator at a predetermined interval with the adhesive layer as a bonding surface,
(B) The separator has a cut along the outer periphery of the dicing tape,
(C) The depth of the notch is 2/3 or less of the thickness of the separator,
(D) The adhesive layer is added with a colorant, and is adhered to the back surface of a semiconductor chip included in a flip-chip mounted semiconductor device;
The method for manufacturing the semiconductor device includes:
Peeling the separator from the film for manufacturing a semiconductor device;
And a step of adhering a semiconductor wafer on the adhesive layer.

(A) is a cross-sectional schematic diagram which shows an example of the film for semiconductor device manufacture which concerns on this embodiment, (b) is the fragmentary top view. It is a cross-sectional schematic diagram which shows an example of the manufacturing method of the semiconductor device using the dicing tape with an adhesive layer concerning this embodiment.

  One embodiment of the present invention will be described with reference to FIG. 1, but the present invention is not limited to these examples. FIG. 1A is a schematic cross-sectional view showing an example of a film for manufacturing a semiconductor device according to this embodiment, and FIG. 1B is a partial plan view thereof. is there. Note that in this specification, parts unnecessary for description are omitted in the drawings, and there are parts illustrated in an enlarged or reduced manner for ease of description.

(Film for semiconductor device manufacturing)
As shown in FIG. 1A and FIG. 1B, the semiconductor device manufacturing film 40 has a dicing tape 1 with an adhesive layer having a circular shape in plan view on a long separator 42 at a predetermined interval. It has a stacked configuration.

(Dicing tape with adhesive layer)
The dicing tape 1 with an adhesive layer is configured to include a dicing tape 3 in which a pressure-sensitive adhesive layer 32 is provided on a base material 31 and an adhesive layer 2 provided on the pressure-sensitive adhesive layer 32. The diameter of the adhesive layer 2 is preferably the same as the diameter of the dicing tape 3 or smaller than the dicing tape 3 as shown in FIG. The dicing tape 1 with an adhesive layer is laminated on the separator 42 with the adhesive layer 2 as a bonding surface. In the separator 42, a notch 44 having a depth of 2/3 or less of the thickness of the separator 42 is formed along the outer periphery of the dicing tape 3 from the dicing tape 3 side. The depth of the cut 44 is preferably 1/6 or more and 2/3 or less, and more preferably 1/3 or more and 2/3 or less. Since the notch 44 is formed along the outer periphery of the dicing tape 3 in the separator 42, the dicing tape 1 with the adhesive layer can be easily peeled from the separator 42 starting from the notch 44. Moreover, since the depth of the notch 44 is 2/3 or less of the thickness of the separator 42, when the dicing tape 1 with the adhesive layer is about to be peeled from the separator 42, the separator 42 is torn from the notched portion. Can be prevented. As a result, the dicing tape 1 with an adhesive layer can be suitably peeled off (seated) from the separator 42.

(Separator)
Examples of the separator 42 include paper-based substrates such as paper; fiber-based substrates such as cloth, non-woven fabric, felt, and net; metal-based substrates such as metal foil and metal plate; plastics such as plastic films and sheets. Base materials: Rubber base materials such as rubber sheets; Foams such as foam sheets, and laminates thereof [particularly, laminates of plastic base materials and other base materials, or plastic films (or sheets) An appropriate thin leaf body such as a laminate and the like] can be used. In the present invention, a plastic substrate such as a plastic film or sheet can be suitably used as the substrate. Examples of the material in such a plastic material include, for example, olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer such as ethylene copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins. The separator 42 may be a single layer or two or more types. In addition, as a manufacturing method of the separator 42, it can form by a conventionally well-known method.

  It is preferable that at least the surface of the separator 42 on which the adhesive layer 2 is laminated is peeled off.

  Examples of the release agent used for the release treatment include a fluorine release agent, a long-chain alkyl acrylate release agent, and a silicone release agent. Of these, silicone release agents are preferred.

  The thickness of the separator 42 is not particularly limited, but is preferably 3 to 300 μm, more preferably 5 to 200 μm, and still more preferably 10 to 100 μm. By setting the thickness of the separator 42 to 10 μm or more, it is easy to make it 2/3 or less of the thickness of the separator 42 when forming a cut in the separator.

(Adhesive layer)
The adhesive layer 2 has a film form. The adhesive layer 2 is normally in an uncured state (including a semi-cured state) in the form of the dicing tape 1 with an adhesive layer as a product or the film 40 for manufacturing a semiconductor device, and the dicing tape 1 with an adhesive layer is After being attached to the semiconductor wafer, it is thermally cured.

  The adhesive layer is preferably formed of at least a thermosetting resin, and more preferably formed of at least a thermosetting resin and a thermoplastic resin. By forming at least with a thermosetting resin, the adhesive layer can effectively exhibit an adhesive function.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET (polyethylene terephthalate) and PBT (polybutylene terephthalate), polyamideimide resins, or fluorine Examples thereof include resins. A thermoplastic resin can be used individually or in combination of 2 or more types. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and is linear or branched having 30 or less carbon atoms (preferably 4 to 18 carbon atoms, more preferably 6 to 10 carbon atoms, and particularly preferably 8 or 9 carbon atoms). And polymers having one or more esters of acrylic acid or methacrylic acid having an alkyl group as a component. That is, in the present invention, acrylic resin has a broad meaning including methacrylic resin. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, pentyl group, isopentyl group, hexyl group, heptyl group, and 2-ethylhexyl group. Octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, dodecyl group (lauryl group), tridecyl group, tetradecyl group, stearyl group, octadecyl group and the like.

  Further, the other monomer for forming the acrylic resin (a monomer other than an alkyl ester of acrylic acid or methacrylic acid having an alkyl group with 30 or less carbon atoms) is not particularly limited. For example, acrylic acid , Methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid-containing monomer, such as maleic anhydride or itaconic anhydride, etc. ) 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (meta ) Acrylic acid 10-hydroxyde , Hydroxyl group-containing monomers such as 12-hydroxylauryl (meth) acrylic acid or (4-hydroxymethylcyclohexyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane Sulfonic acid, methacrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate or sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or phosphoric acid group content such as 2-hydroxyethyl acryloyl phosphate And monomers. In addition, (meth) acrylic acid means acrylic acid and / or methacrylic acid, and (meth) of the present invention has the same meaning.

  Examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. A thermosetting resin can be used individually or in combination of 2 or more types. As the thermosetting resin, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is particularly suitable. Moreover, a phenol resin can be used suitably as a hardening | curing agent of an epoxy resin.

  The epoxy resin is not particularly limited. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy. Bifunctional epoxy such as resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin Epoxy resin such as resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin It can be used.

  As the epoxy resin, among the above examples, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Furthermore, the phenol resin acts as a curing agent for the epoxy resin. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. A phenol resin can be used individually or in combination of 2 or more types. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 equivalent to 1.2 equivalent. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The content of the thermosetting resin is preferably 5% by weight or more and 90% by weight or less, more preferably 10% by weight or more and 85% by weight or less, with respect to all resin components in the adhesive layer. More preferably, it is 15 weight% or more and 80 weight% or less. By making the content 5% by weight or more, the thermosetting shrinkage can be easily made 2% by volume or more. In addition, when the sealing resin is heat-cured, the adhesive layer can be sufficiently heat-cured, and the flip-chip type semiconductor device without peeling can be manufactured by securely bonding and fixing to the back surface of the semiconductor element. become. On the other hand, the warpage of the package (PKG: flip chip type semiconductor device) can be suppressed by making the content 90% by weight or less.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  The adhesive layer is preferably formed of a resin composition containing an epoxy resin and a phenol resin, or a resin composition containing an epoxy resin, a phenol resin and an acrylic resin. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured.

  It is important that the adhesive layer 2 has adhesiveness (adhesiveness) to the back surface (circuit non-formed surface) of the semiconductor wafer. The adhesive layer 2 can be formed by, for example, a resin composition containing an epoxy resin as a thermosetting resin. In order to crosslink the adhesive layer 2 to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinker. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  The adhesive force of the adhesive layer to the semiconductor wafer (23 ° C., peeling angle 180 degrees, peeling speed 300 mm / min) is preferably in the range of 0.5 N / 20 mm to 15 N / 20 mm, and 0.7 N / 20 mm to 10 N / 20 mm. A range is more preferred. By setting it to 0.5 N / 20 mm or more, it is stuck to a semiconductor wafer or a semiconductor element with excellent adhesion, and the occurrence of floating or the like can be prevented. Further, it is possible to prevent the occurrence of chip jumping during dicing of the semiconductor wafer. On the other hand, by setting it to 15 N / 20 mm or less, it can be easily peeled from the dicing tape.

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent, a metal salt Examples thereof include a system crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent. As the crosslinking agent, an isocyanate crosslinking agent or an epoxy crosslinking agent is suitable. Moreover, the said crosslinking agent can be used individually or in combination of 2 or more types.

  Examples of the isocyanate crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In addition, the usage-amount in particular of a crosslinking agent is not restrict | limited, According to the grade to bridge | crosslink, it can select suitably. Specifically, the amount of the crosslinking agent used is, for example, usually 7 parts by weight or less (for example, 0.05 parts by weight) with respect to 100 parts by weight of the polymer component (particularly, the polymer having a functional group at the molecular chain end). ~ 7 parts by weight). When the amount of the crosslinking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesive force is lowered, which is not preferable. From the viewpoint of improving cohesive strength, the amount of crosslinking agent used is preferably 0.05 parts by weight or more with respect to 100 parts by weight of the polymer component.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The adhesive layer is preferably colored. Thereby, excellent marking properties and appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained. Thus, since the colored adhesive layer has excellent marking properties, the surface of the semiconductor element or the non-circuit surface side of the semiconductor device using the semiconductor element is interposed through the adhesive layer. By using various marking methods such as a printing method and a laser marking method, marking can be performed and various information such as character information and graphic information can be given. In particular, by controlling the coloring color, it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility. Further, since the adhesive layer is colored, the dicing tape and the adhesive layer can be easily distinguished from each other, and workability and the like can be improved. Further, for example, as a semiconductor device, it is possible to color-code according to products. When the adhesive layer is colored (when it is colorless and not transparent), it is not particularly limited as a color exhibited by coloring, but it is preferably a dark color such as black, blue, red, etc. Preferably it is.

In the present embodiment, the dark, basically, L ^* a ^* b ^* L defined by the color system ^* is 60 or less (0 to 60) [preferably 50 or less (0 to 50) More preferably, it means a dark color of 40 or less (0 to 40)].

Also, black and basically, L ^* a ^* b ^* L defined by the color system ^* is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a black color which is (0-25) below. In black, a ^* and b ^* defined in the L ^* a ^* b ^* color system can be appropriately selected according to the value of L ^* . As a ^* and b ^* , for example, both are preferably −10 to 10, more preferably −5 to 5, particularly in the range of −3 to 3 (among others 0 or almost 0). Is preferred.

In the present embodiment, L ^* , a ^* , and b ^* defined by the L ^* a ^* b ^* color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated | required by measuring using. The L ^* a ^* b ^* color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L ^* a ^* b ^* ) color system. It means that. The L ^* a ^* b ^* color system is defined in JIS Z 8729 in the Japanese Industrial Standard.

  When coloring the adhesive layer, a coloring material (coloring agent) can be used according to the target color. As such a color material, various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable. As the color material, any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more. As the dye, any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used. Also, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.

  In particular, when a dye is used as a coloring material, the dye is dissolved or uniformly dispersed in the adhesive layer, so that the color density is uniform or almost uniform. Dicing tape) can be manufactured easily. Therefore, when a dye is used as the coloring material, the adhesive layer in the dicing tape with an adhesive layer can have a uniform or almost uniform coloring concentration, and can improve marking properties and appearance.

  Although it does not restrict | limit especially as a black color material, For example, it can select suitably from an inorganic black pigment and a black dye. In addition, as a black color material, a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be. Black color materials can be used alone or in combination of two or more. Of course, the black color material can be used in combination with a color material other than black.

  Specifically, as the black color material, for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.

  In the present invention, as the black color material, C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C. I. Black dyes such as Disperse Black 1, 3, 10, and 24; I. Black pigments such as CI Pigment Black 1 and 7 can also be used.

  Examples of such a black color material include a product name “Oil Black BY”, a product name “OilBlack BS”, a product name “OilBlack HBB”, a product name “Oil Black 803”, a product name “Oil Black 860”, The product name “Oil Black 5970”, the product name “Oil Black 5906”, the product name “Oil Black 5905” (manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.

  Examples of the color material other than the black color material include a cyan color material, a magenta color material, and a yellow color material. Examples of cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.

  In the magenta color material, examples of the magenta dye include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.

  In the magenta color material, examples of the magenta pigment include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc. 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. C.I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; I. Bat red 1, 2, 10, 13, 15, 23, 29, 35 and the like.

  Examples of yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 10, 12, 13, 14, 15, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Examples thereof include yellow pigments such as Vat Yellow 1, 3 and 20.

  Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more. When two or more kinds of various color materials such as a cyan color material, a magenta color material, and a yellow color material are used, the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.

  When coloring the adhesive layer 2, the coloring form is not particularly limited. For example, the adhesive layer may be a single-layer film to which a colorant is added. Further, it may be a laminated film in which at least a resin layer formed of a thermosetting resin and a colorant layer are laminated. When the adhesive layer 2 is a laminated film of a resin layer and a colorant layer, the adhesive layer 2 in a laminated form may have a laminated form of resin layer / colorant layer / resin layer. preferable. In this case, the two resin layers on both sides of the colorant layer may be resin layers having the same composition or may be resin layers having different compositions.

  In the adhesive layer 2, other additives can be appropriately blended as necessary. Examples of other additives include fillers (fillers), flame retardants, silane coupling agents, ion trapping agents, bulking agents, antioxidants, antioxidants, and surfactants.

  The filler may be either an inorganic filler or an organic filler, but an inorganic filler is suitable. By blending a filler such as an inorganic filler, conductivity can be imparted to the adhesive layer, thermal conductivity can be improved, and the elastic modulus can be adjusted. The adhesive layer 2 may be conductive or non-conductive. Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. , Various inorganic powders made of metal such as tin, zinc, palladium, solder, or alloys, and other carbon. A filler can be used individually or in combination of 2 or more types. Among them, silica, particularly fused silica is suitable as the filler. In addition, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.1 micrometer-80 micrometers. The average particle diameter of the inorganic filler can be measured by, for example, a laser diffraction type particle size distribution measuring apparatus.

  The blending amount of the filler (particularly inorganic filler) is preferably 80 parts by weight or less (0 to 80 parts by weight), particularly 0 to 70 parts by weight with respect to 100 parts by weight of the organic resin component. It is preferable that

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. A flame retardant can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. A silane coupling agent can be used individually or in combination of 2 or more types. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. An ion trap agent can be used individually or in combination of 2 or more types.

  The adhesive layer 2 is, for example, a resin composition obtained by mixing a thermosetting resin such as an epoxy resin, a thermoplastic resin such as an acrylic resin as necessary, and a solvent or other additives as necessary. Can be formed using a conventional method of forming a film-like layer. Specifically, for example, the resin composition is applied onto the pressure-sensitive adhesive layer 32 of the dicing tape, or the resin composition is applied onto an appropriate separator (such as release paper) to form a resin layer (or adhesive). A film-like layer (adhesive layer) as an adhesive layer can be formed by a method of forming a layer) and transferring (transferring) it onto the pressure-sensitive adhesive layer 32. The resin composition may be a solution or a dispersion.

  When the adhesive layer 2 is formed of a resin composition containing a thermosetting resin such as an epoxy resin, the thermosetting resin is uncured before the adhesive layer is applied to the semiconductor wafer. Or it is a state of partial hardening. In this case, after application to the semiconductor wafer (specifically, usually when the sealing material is cured in a flip chip bonding process), the thermosetting resin in the adhesive layer is completely or almost completely cured.

Thus, even if the adhesive layer contains a thermosetting resin, since the thermosetting resin is in an uncured or partially cured state, the gel fraction of the adhesive layer is not particularly limited. For example, it can be appropriately selected from the range of 50% by weight or less (0% by weight to 50% by weight), preferably 30% by weight or less (0% by weight to 30% by weight), particularly 10% by weight or less ( 0% by weight to 10% by weight) is preferred. The measuring method of the gel fraction of an adhesive bond layer can be measured with the following measuring methods.
<Method for measuring gel fraction>
About 0.1 g from the adhesive layer is sampled and weighed accurately (weight of sample), and the sample is wrapped in a mesh sheet, and then immersed in about 50 ml of toluene at room temperature for 1 week. Thereafter, the solvent-insoluble matter (the contents of the mesh sheet) is taken out from toluene and dried at 130 ° C. for about 2 hours. The solvent-insoluble matter after drying is weighed (weight after immersion / drying), and the following formula (a) The gel fraction (% by weight) is then calculated.
Gel fraction (% by weight) = [(weight after immersion / drying) / (weight of sample)] × 100 (a)

  The gel fraction of the adhesive layer can be controlled by the heating temperature, the heating time, etc., in addition to the type and content of the resin component, the type and content of the crosslinking agent.

  In the present invention, when the adhesive layer is a film-like product formed of a resin composition containing a thermosetting resin such as an epoxy resin, it can effectively exhibit adhesion to a semiconductor wafer.

  In addition, since the cutting water is used in the dicing process of the semiconductor wafer, the adhesive layer may absorb moisture, resulting in a moisture content higher than that in the normal state. If flip-chip bonding is performed with such a high water content, water vapor may accumulate at the bonding interface between the adhesive layer 2 and the semiconductor wafer or its processed body (semiconductor), and floating may occur. Therefore, the adhesive layer has a structure in which a core material with high moisture permeability is provided on both sides, so that water vapor diffuses and this problem can be avoided. From this point of view, a multilayer structure in which the adhesive layers 2 and 12 are formed on one side or both sides of the core material may be used as the adhesive layer. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.

  The thickness of the adhesive layer 2 (total thickness in the case of a laminated film) is not particularly limited, but can be appropriately selected from a range of about 2 μm to 200 μm, for example. Further, the thickness is preferably about 4 μm to 160 μm, more preferably about 6 μm to 100 μm, and particularly preferably about 10 μm to 80 μm.

  The tensile storage modulus at 23 ° C. in the uncured state of the adhesive layer 2 is preferably 1 GPa or more (for example, 1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly preferably 3 GPa or more. It is. When the tensile storage elastic modulus is 1 GPa or more, the semiconductor chip is peeled off from the adhesive layer 32 of the dicing tape together with the adhesive layer 2, and then the adhesive layer 2 is placed on the support for transportation, etc. When this is performed, it is possible to effectively suppress or prevent the adhesive layer from sticking to the support. In addition, the said support body says the top tape in a carrier tape, a bottom tape, etc., for example. In the case where the adhesive layer 2 is formed of a resin composition containing a thermosetting resin, as described above, the thermosetting resin is usually in an uncured or partially cured state. The elastic modulus at 23 ° C. is usually the elastic modulus at 23 ° C. when the thermosetting resin is uncured or partially cured.

  Here, the adhesive layer 2 may be a single layer or a laminated film in which a plurality of layers are laminated. In the case of a laminated film, the tensile storage elastic modulus at 23 ° C. in the uncured state is the whole laminated film. 1 GPa or more (for example, 1 GPa to 50 GPa). In addition, the tensile storage modulus (23 ° C.) of the adhesive layer in an uncured state is the type of resin component (thermoplastic resin, thermosetting resin) and its content, the type of filler such as silica filler, and the like. It can be controlled by the content. When the adhesive layer 2 is a laminated film in which a plurality of layers are laminated (when the adhesive layer has a laminated form), examples of the laminated form include a wafer adhesive layer and a laser mark layer. The laminated form etc. which consist of can be illustrated. In addition, between such a wafer adhesive layer and a laser mark layer, other layers (intermediate layer, light blocking layer, reinforcing layer, colored layer, substrate layer, electromagnetic wave blocking layer, heat conducting layer, adhesive layer, etc.) ) May be provided. The wafer adhesive layer is a layer that exhibits excellent adhesion (adhesiveness) to the wafer, and is a layer that contacts the back surface of the wafer. On the other hand, the laser mark layer is a layer that exhibits excellent laser marking properties, and is a layer that is used when laser marking is performed on the back surface of a semiconductor chip.

  The tensile storage elastic modulus was determined by using the dynamic viscoelasticity measuring device “Solid Analyzer RS A2” manufactured by Rheometric Co., Ltd., by preparing an uncured adhesive layer 2 without laminating it on the dicing tape 3. In tension mode, sample width: 10 mm, sample length: 22.5 mm, sample thickness: 0.2 mm, frequency: 1 Hz, heating rate: 10 ° C./min, predetermined temperature (23 C.) and the obtained tensile storage modulus was obtained.

  Further, the light transmittance (visible light transmittance) of visible light (wavelength: 400 nm to 800 nm) in the adhesive layer 2 is not particularly limited, but is, for example, in the range of 20% or less (0% to 20%). Is more preferably 10% or less (0% to 10%), and particularly preferably 5% or less (0% to 5%). If the adhesive layer 2 has a visible light transmittance of more than 20%, the semiconductor element may be adversely affected by the passage of light. The visible light transmittance (%) is controlled by the type and content of the resin component of the adhesive layer 2, the type and content of the colorant (pigment, dye, etc.), the content of the inorganic filler, and the like. can do.

  The visible light transmittance (%) of the adhesive layer 2 can be measured as follows. That is, a single adhesive layer 2 having a thickness (average thickness) of 20 μm is produced. Next, visible light having a wavelength of 400 nm to 800 nm [apparatus: visible light generator manufactured by Shimadzu Corporation (trade name “ABSORPTION SPECTRO PHOTOMETR”)] is irradiated to the adhesive layer 2 with a predetermined intensity and transmitted. Measure the light intensity. Furthermore, the value of the visible light transmittance can be obtained from the intensity change before and after the visible light passes through the adhesive layer 2. Note that the visible light transmittance (%; wavelength: 400 nm to 400 μm) of the adhesive layer 2 having a thickness of 20 μm depends on the value of the visible light transmittance (%; wavelength: 400 nm to 800 nm) of the adhesive layer 2 that is not 20 μm thick. 800 nm) can also be derived. In the present invention, the visible light transmittance (%) in the case of the adhesive layer 2 having a thickness of 20 μm is obtained, but the adhesive layer according to the present invention is not limited to the one having a thickness of 20 μm. .

  The adhesive layer 2 preferably has a lower moisture absorption rate. Specifically, the moisture absorption rate is preferably 1% by weight or less, more preferably 0.8% by weight or less. By making the moisture absorption rate 1% by weight or less, the laser marking property can be improved. Further, for example, in the reflow process, generation of voids between the adhesive layer 2 and the semiconductor element can be suppressed or prevented. The moisture absorption rate is a value calculated from a change in weight before and after the adhesive layer 2 is left for 168 hours in an atmosphere at a temperature of 85 ° C. and a relative humidity of 85% RH. When the adhesive layer 2 is formed of a resin composition containing a thermosetting resin, the moisture absorption rate is 168 in an atmosphere having a temperature of 85 ° C. and a relative humidity of 85% RH with respect to the adhesive layer after thermosetting. It means the value when left unattended. Moreover, the said moisture absorption rate can be adjusted by changing the addition amount of an inorganic filler, for example.

  Further, the adhesive layer 2 preferably has a smaller volatile content. Specifically, the weight reduction rate (ratio of weight reduction amount) of the adhesive layer 2 after the heat treatment is preferably 1% by weight or less, and more preferably 0.8% by weight or less. The conditions for the heat treatment are, for example, a heating temperature of 250 ° C. and a heating time of 1 hour. By making the weight reduction rate 1% by weight or less, the laser marking property can be improved. For example, in the reflow process, it is possible to suppress or prevent the occurrence of cracks in the flip chip type semiconductor device. The weight reduction rate can be adjusted, for example, by adding an inorganic substance that can reduce the generation of cracks during lead-free solder reflow. In addition, when the adhesive layer 2 is formed of a resin composition containing a thermosetting resin, the weight reduction rate is a condition of a heating temperature of 250 ° C. and a heating time of 1 hour with respect to the adhesive layer after thermosetting. It means the value when heated below.

(Dicing tape)
The dicing tape 3 is configured by forming an adhesive layer 32 on a base material 31. Thus, the dicing tape 3 should just have the structure by which the base material 31 and the adhesive layer 32 were laminated | stacked. The substrate (support substrate) can be used as a support matrix such as an adhesive layer. The substrate 31 preferably has a radiation transparency. Examples of the substrate 31 include paper-based substrates such as paper; fiber-based substrates such as cloth, nonwoven fabric, felt, and net; metal-based substrates such as metal foils and metal plates; plastic films and sheets Plastic base materials; Rubber base materials such as rubber sheets; Foams such as foam sheets, and laminates thereof [particularly, laminates of plastic base materials and other base materials, and plastic films (or sheets) An appropriate thin leaf body such as a laminated body of each other] can be used. In the present invention, a plastic substrate such as a plastic film or sheet can be suitably used as the substrate. Examples of the material in such a plastic material include, for example, olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer such as ethylene copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins.

  Moreover, as a material of the base material 31, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet imparted with heat shrinkability by stretching or the like, the adhesive area between the pressure-sensitive adhesive layer 32 and the adhesive layer 2 is reduced by thermally shrinking the base material 31 after dicing, and the semiconductor chip is recovered. Can be facilitated.

  The surface of the base material 31 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 31, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. The base material 31 is provided with a deposited layer of a conductive material having a thickness of about 30 to 500 mm made of a metal, an alloy, an oxide thereof, or the like on the base material 31 in order to impart an antistatic ability. be able to. The base material 31 may be a single layer or a multilayer of two or more types.

  The thickness of the substrate 31 (total thickness in the case of a laminated body) is not particularly limited and can be appropriately selected according to strength, flexibility, purpose of use, and the like. For example, it is generally 1000 μm or less (for example, 1 μm to 1000 μm), preferably 10 μm to 500 μm, more preferably 20 μm to 300 μm, particularly about 30 μm to 200 μm, but is not limited thereto.

  The base material 31 includes various additives (coloring agent, filler, plasticizer, anti-aging agent, antioxidant, surfactant, flame retardant, etc.) as long as the effects of the present invention are not impaired. It may be.

  The adhesive layer 32 is formed of an adhesive and has adhesiveness. Such an adhesive is not particularly limited, and can be appropriately selected from known adhesives. Specifically, examples of the adhesive include acrylic adhesive, rubber adhesive, vinyl alkyl ether adhesive, silicone adhesive, polyester adhesive, polyamide adhesive, urethane adhesive, fluorine Type adhesives, styrene-diene block copolymer adhesives, and known adhesives such as a creep property-improving adhesive in which a hot-melt resin having a melting point of about 200 ° C. or less is blended with these adhesives (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, etc.) It can be selected and used. Moreover, as a pressure sensitive adhesive, a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) or a thermally expandable pressure sensitive adhesive can be used. An adhesive can be used individually or in combination of 2 or more types.

  As the pressure-sensitive adhesive, acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives can be suitably used, and acrylic pressure-sensitive adhesives are particularly preferable. As an acrylic adhesive, an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or more (meth) acrylic acid alkyl esters as monomer components. Agents.

  Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic. Butyl acid, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, ( Octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate, (meta Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, (meth) acrylic Examples include (meth) acrylic acid alkyl esters such as acid eicosyl. The (meth) acrylic acid alkyl ester is preferably a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group. In addition, the alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.

  In addition, the said acrylic polymer is another monomer component (for example) copolymerizable with the said (meth) acrylic-acid alkylester as needed for the purpose of modification | reformation, such as cohesion force, heat resistance, and crosslinkability. A unit corresponding to the copolymerizable monomer component) may be included. Examples of such copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyl such as carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Group-containing monomer; Acid anhydride group-containing monomer such as maleic anhydride, itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid, Sulfonic acid group-containing monomers such as rylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid; Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) (N-substituted) amide monomers such as acrylamide; (meth) acrylic acid such as aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, and t-butylaminoethyl (meth) acrylate A Noalkyl monomers; (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; glycidyl (meth) acrylate and the like Epoxy group-containing acrylic monomers; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imida Nitrogen-containing monomers such as benzene, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, N-vinyl caprolactam; maleimides such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide Monomers: Itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide N- (meth) acryloyloxymethylene succinimide, N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylenesk Succinimide monomers such as N-imide; glycol-based acrylic ester monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol; ) Acrylic acid ester monomer having heterocycle such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, halogen atom, silicon atom, etc .; hexanediol di (meth) acrylate, (poly) ethylene glycol Di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) a Chryrate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyldi (meth) acrylate, hexyldi (meth) And polyfunctional monomers such as acrylate. These copolymerizable monomer components can be used alone or in combination of two or more.

  When a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) is used as the pressure sensitive adhesive, examples of the radiation curable pressure sensitive adhesive (composition) include a radical reactive carbon-carbon double bond as a polymer side chain or a main chain. Intrinsic radiation curable adhesives that use polymers in the chain or at the end of the main chain as the base polymer, and radiation curable adhesives that contain UV-curable monomer or oligomer components in the adhesive It is done. Moreover, when using a heat-expandable adhesive as an adhesive, as a heat-expandable adhesive, the heat-expandable adhesive containing an adhesive and a foaming agent (especially heat-expandable microsphere) etc. are mentioned, for example.

  In the present invention, the pressure-sensitive adhesive layer 32 has various additives (for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, and an anti-aging agent as long as the effects of the present invention are not impaired. , Antioxidants, surfactants, cross-linking agents, etc.).

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent. , Metal salt crosslinking agents, carbodiimide crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, amine crosslinking agents, and the like, and isocyanate crosslinking agents and epoxy crosslinking agents are preferred. A crosslinking agent can be used individually or in combination of 2 or more types. In addition, the usage-amount of a crosslinking agent is not restrict | limited in particular.

  Examples of the isocyanate crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The pressure-sensitive adhesive layer 32 is formed by using, for example, a conventional method of forming a sheet-like layer by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives. be able to. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent and other additives onto the base material 31, and applying the mixture onto an appropriate separator (such as a release paper) The pressure-sensitive adhesive layer 32 can be formed by a method in which the pressure-sensitive adhesive layer 32 is formed and transferred (transferred) onto the substrate 31.

  The thickness of the adhesive layer 32 is not particularly limited, and is, for example, about 5 μm to 300 μm (preferably 5 μm to 200 μm, more preferably 5 μm to 100 μm, particularly preferably 7 μm to 50 μm). When the thickness of the pressure-sensitive adhesive layer 32 is within the above range, an appropriate pressure-sensitive adhesive force can be exhibited. The pressure-sensitive adhesive layer 32 may be either a single layer or multiple layers.

  The adhesive force (23 ° C., peeling angle 180 °, peeling speed 300 mm / min) of the pressure-sensitive adhesive layer 32 of the dicing tape 3 is preferably in the range of 0.02 N / 20 mm to 10 N / 20 mm. A range of 05 N / 20 mm to 5 N / 20 mm is more preferable. By setting the adhesive force to 0.02 N / 20 mm or more, it is possible to prevent the semiconductor element from jumping when the semiconductor wafer is diced. On the other hand, by setting the adhesive force to 10 N / 20 mm or less, it is possible to prevent the semiconductor element from becoming difficult to peel or the adhesive residue from occurring when the semiconductor element is picked up.

  In the present invention, the adhesive layer 2 and the dicing tape 1 with the adhesive layer can be provided with an antistatic ability. As a result, it is possible to prevent the circuit from being broken due to the generation of static electricity during the bonding and peeling, and the resulting charging of the semiconductor wafer or the like. The antistatic ability is imparted by adding an antistatic agent or a conductive substance to the base material 31, the pressure-sensitive adhesive layer 32 or the adhesive layer 2, and a conductive layer made of a charge transfer complex or a metal film to the base material 31. It can be performed by an appropriate method such as a method of attaching. As these methods, a method in which impurity ions that may change the quality of the semiconductor wafer are less likely to be generated is preferable. As a conductive substance (conductive filler) blended for the purpose of imparting conductivity and improving thermal conductivity, spherical, needle-like, and flaky shapes such as silver, aluminum, gold, copper, nickel, and conductive alloys Examples thereof include metal powders, metal oxides such as alumina, amorphous carbon black, and graphite. However, the adhesive layer 2 is preferably non-conductive from the viewpoint of preventing electrical leakage.

  Moreover, the film 40 for semiconductor device manufacture may be formed in the form wound by roll shape, and may be formed in the form by which the sheet | seat (film) was laminated | stacked. In addition, as the film 40 for semiconductor device manufacture of the form wound by roll shape, on the base material 31, the adhesive layer 32 formed in the one surface of the said base material 31, and the said adhesive layer 32 You may be comprised by the formed adhesive bond layer and the peeling process layer (back process layer) formed in the other surface of the said base material 31. FIG.

  In addition, as thickness of the dicing tape 1 with an adhesive layer (total thickness of the thickness of an adhesive layer and the thickness of the dicing tape which consists of the base material 31 and the adhesive layer 32), it is from the range of 8 micrometers-1500 micrometers, for example. The thickness can be selected, and is preferably 20 μm to 850 μm (more preferably 31 μm to 500 μm, particularly preferably 47 μm to 330 μm).

  In the adhesive layer 2, the ratio of the thickness of the adhesive layer 2 and the thickness of the pressure-sensitive adhesive layer 32 of the dicing tape 3 is not particularly limited. For example, the thickness of the adhesive layer 2 / the pressure of the dicing tape 3 The thickness of the agent layer 32 can be appropriately selected from the range of 150/5 to 3/100, preferably 100/5 to 3/50, and particularly preferably 60/5 to 3/40. is there. By setting the ratio of the thickness of the adhesive layer 2 and the thickness of the pressure-sensitive adhesive layer 32 of the dicing tape 3 to 3/100 or more, it is possible to prevent the pressure-sensitive adhesive force from becoming too high. On the other hand, by setting it as 150/5 or less, it can prevent that adhesive force becomes low too much.

  In the adhesive layer 2, the ratio of the thickness of the adhesive layer 2 and the thickness of the dicing tape 3 (total thickness of the base material 31 and the pressure-sensitive adhesive layer 32) is not particularly limited. The thickness of the layer 2 / the thickness of the dicing tape 3 can be appropriately selected from the range of 150/50 to 3/500, preferably 100/50 to 3/300, particularly 60/50 to 3/150. It is preferable that When the ratio of the thickness of the adhesive layer 2 and the thickness of the dicing tape 3 is 3/500 or more, the pickup can be easily performed. On the other hand, by setting it as 150/50 or less, it can prevent that the side surface residue at the time of dicing increases.

  Thus, the ratio between the thickness of the adhesive layer 2 and the thickness of the adhesive layer 32 of the dicing tape 3, the thickness of the adhesive layer 2, and the thickness of the dicing tape 3 (the base material 31 and the adhesive layer 32). By controlling the ratio to the total thickness), it is possible to improve the dicing performance during the dicing process, the pick-up performance during the pick-up process, etc., and it is effective from the semiconductor wafer dicing process to the semiconductor chip flip-chip bonding process. Can be used.

(Manufacturing method of semiconductor device manufacturing film)
A method for manufacturing a film for manufacturing a semiconductor device according to the present embodiment will be described using the film 40 for manufacturing a semiconductor device shown in FIG. 1 as an example. In the manufacturing method of the semiconductor device manufacturing film 40 according to the present embodiment, the dicing tape 1 with the adhesive layer in which the adhesive layer 2 is laminated on the dicing tape 3 has the separator 42 as the bonding surface. A step of preparing a film with a separator laminated on the substrate, and a step of cutting the film with a separator into a size corresponding to a semiconductor wafer to be adhered. The cutting is performed from the dicing tape 3 side to a depth that is 2/3 or less of the thickness of the separator 42.

  First, the base material 31 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, the pressure-sensitive adhesive composition is applied on the substrate 31 and dried (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 32. Examples of the coating method include roll coating, screen coating, and gravure coating. The pressure-sensitive adhesive layer composition may be applied directly to the base material 31 to form the pressure-sensitive adhesive layer 32 on the base material 31. Also, a release paper or the like that has been subjected to a release treatment on the surface of the pressure-sensitive adhesive composition. The pressure-sensitive adhesive layer 32 may be transferred to the substrate 31 after being applied to the substrate. Thereby, the dicing tape 3 in which the adhesive layer 32 is formed on the base material 31 is produced.

  On the other hand, the forming material for forming the adhesive layer 2 is applied on the release paper so that the thickness after drying becomes a predetermined thickness, and further dried under predetermined conditions (necessary in cases where thermosetting is required, for example). In accordance with the above, heat treatment is performed and drying is performed to form a coating layer. Thereafter, the coating layer is dried under predetermined conditions to form the adhesive layer 2.

  Next, the adhesive layer 2 is punched out in accordance with the shape of the semiconductor wafer to be bonded, and bonded to the dicing tape 3. Then, the film with a separator is obtained by laminating | stacking on the separator 42 by making the adhesive bond layer 2 into a bonding surface. The separator 42 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, the film with a separator is cut into a size corresponding to a semiconductor wafer to be attached. This cutting is performed from the dicing tape 3 side to a depth of 2/3 or less of the thickness of the separator 42 (see FIG. 1B). Thereby, there is a cut along the outer periphery of the dicing tape 3 in the separator 42, and the semiconductor device manufacturing film 40 in which the depth of the cut is 2/3 or less of the thickness of the separator 42 is obtained. In addition, the adhesive layer 2 is attached to the dicing tape 3 without being punched, and further laminated on the separator as it is to produce a film with a separator, and then the separator attached to a size corresponding to the target semiconductor wafer to be attached. The film may be cut. In this case, the cutting is performed simultaneously with the cutting of the adhesive layer 2 and the dicing tape 3 and the formation of the cut 44.

  The method for forming the cut is not particularly limited, and examples thereof include a method using a rotary, a method using a die cutting blade (for example, a Thomson blade), and laser processing. Especially, a rotary is preferable at the point which can raise the precision of the depth of the notch to form. Moreover, when using the blade for die cutting, it is preferable to install a spacer inside and / or outside the blade. Thereby, the precision of the depth of the notch to form can be made high. In other words, conventionally, when forming a cut in a separator, simply forming the cut using a cutting blade, the accuracy is low, and a cut deeper than 2/3 of the thickness of the separator is formed. was there. In some cases, the blade did not reach the separator and the dicing tape was not cut. However, if a rotary is used or a spacer is installed inside and / or outside of the blade, the accuracy of the depth of cut formed can be increased.

(Semiconductor wafer)
The semiconductor wafer is not particularly limited as long as it is a known or commonly used semiconductor wafer, and can be appropriately selected from semiconductor wafers of various materials. In the present invention, a silicon wafer can be suitably used as the semiconductor wafer.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device according to the present embodiment will be described below with reference to FIG. FIG. 2 is a schematic cross-sectional view showing an example of a method for manufacturing a semiconductor device using the dicing tape with an adhesive layer according to the present embodiment.

  The semiconductor device manufacturing method can manufacture a semiconductor device using the semiconductor device manufacturing film 40. Specifically, the method includes at least a step of peeling the separator 42 from the semiconductor device manufacturing film 40 and a step of attaching a semiconductor wafer onto the adhesive layer 2.

  First, the semiconductor device manufacturing film 40 shown in FIGS. 1A and 1B is prepared, and the separator 42 is peeled from the semiconductor device manufacturing film 40. As described above, the semiconductor device manufacturing film 40 is formed with a cut in the separator 42, and the cut depth into the separator 42 is 2/3 or less of the thickness of the separator 42. Therefore, it is possible to prevent the separator 42 from tearing from the cut portion when the separator 42 is to be peeled from the semiconductor device manufacturing film 40. As peeling conditions, it can be set as 1-100 mm / sec.

[Mounting process]
Next, as shown in FIG. 2A, the semiconductor wafer 4 is stuck on the adhesive layer 2 of the dicing tape 1 with the adhesive layer, and this is adhered and held and fixed (mounting step). At this time, the adhesive layer 2 is in an uncured state (including a semi-cured state). The dicing tape 1 with an adhesive layer is attached to the back surface of the semiconductor wafer 4. The back surface of the semiconductor wafer 4 means a surface opposite to the circuit surface (also referred to as a non-circuit surface or a non-electrode forming surface). Although the sticking method is not specifically limited, the method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll.

[Dicing process]
Next, as shown in FIG. 2B, the semiconductor wafer 4 is diced. As a result, the semiconductor wafer 4 is cut into a predetermined size and divided into pieces (small pieces), whereby the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. In this step, for example, a cutting method called full cut that cuts up to the dicing tape 1 with an adhesive layer can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. In addition, since the semiconductor wafer 4 is bonded and fixed with excellent adhesion by the dicing tape 1 with the adhesive layer 2 having the adhesive layer 2, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer 4 is also suppressed. it can. In addition, when the adhesive layer 2 is formed of a resin composition containing an epoxy resin, even if the adhesive layer 2 is cut by dicing, the adhesive layer of the adhesive layer on the cut surface is prevented or prevented from protruding. be able to. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when expanding the dicing tape 1 with an adhesive layer, the expanding can be performed using a conventionally known expanding device. The expanding device includes a donut-shaped outer ring that can push down the dicing tape 1 with an adhesive layer downward through the dicing ring, and an inner ring that has a smaller diameter than the outer ring and supports the dicing tape with an adhesive layer. have. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

[Pickup process]
In order to collect the semiconductor chip 5 adhered and fixed to the dicing tape 1 with the adhesive layer, the semiconductor chip 5 is picked up together with the adhesive layer 2 as shown in FIG. Peel from the dicing tape 3. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method in which each semiconductor chip 5 is pushed up by a needle from the base material 31 side of the dicing tape 1 with an adhesive layer, and the pushed-up semiconductor chip 5 is picked up by a pickup device. Note that the back surface of the picked-up semiconductor chip 5 is protected by the adhesive layer 2.

[Flip chip connection process]
As shown in FIG. 2D, the picked-up semiconductor chip 5 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method). Specifically, the semiconductor chip 5 is always placed on the adherend 6 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip 5 faces the adherend 6. Fix according to law. For example, the bump 51 formed on the circuit surface side of the semiconductor chip 5 is brought into contact with a bonding conductive material (solder or the like) 61 attached to the connection pad of the adherend 6 while pressing the conductive material. By melting, it is possible to secure electrical continuity between the semiconductor chip 5 and the adherend 6 and fix the semiconductor chip 5 to the adherend 6 (flip chip bonding step). At this time, a gap is formed between the semiconductor chip 5 and the adherend 6, and the air gap distance is generally about 30 μm to 300 μm. After the flip chip bonding (flip chip connection) of the semiconductor chip 5 on the adherend 6, the facing surface and the gap between the semiconductor chip 5 and the adherend 6 are cleaned, and a sealing material (sealing) is placed in the gap. It is important to seal by filling with a stop resin or the like.

  As the adherend 6, various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.

  In the flip chip bonding process, the material of the bump or the conductive material is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal. Materials, solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.

  In the flip chip bonding process, the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 5 and the conductive material on the surface of the adherend 6. The temperature is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.). The dicing tape with an adhesive layer of the present invention can have heat resistance that can withstand high temperatures in the flip chip bonding step by forming the adhesive layer with an epoxy resin or the like.

  In this step, it is preferable to clean the facing surface (electrode forming surface) and the gap between the semiconductor chip 5 and the adherend 6. The cleaning liquid used for the cleaning is not particularly limited, and examples thereof include an organic cleaning liquid and an aqueous cleaning liquid. The adhesive layer in the dicing tape with an adhesive layer of the present invention has solvent resistance to the cleaning liquid, and has substantially no solubility in these cleaning liquids. Therefore, as described above, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and cleaning can be performed by a conventional method.

  Next, a sealing step for sealing the gap between the flip-chip bonded semiconductor chip 5 and the adherend 6 is performed. The sealing step is performed using a sealing resin. Although it does not specifically limit as sealing conditions at this time, Usually, the thermosetting of the sealing resin is performed by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited thereto, For example, it can be cured at 165 ° C. to 185 ° C. for several minutes. In the heat treatment in this step, not only the sealing resin but also the thermosetting of the adhesive layer 2 is performed at the same time. Thereby, both sealing resin and the adhesive bond layer 2 carry out hardening shrinkage with progress of thermosetting. As a result, the stress applied to the semiconductor chip 5 due to the curing shrinkage of the sealing resin can be offset or alleviated by the curing and shrinking of the adhesive layer 2. Moreover, the adhesive layer 2 can be completely or almost completely thermoset by this step, and can be adhered to the back surface of the semiconductor element with excellent adhesion. Furthermore, since the adhesive layer 2 according to the present invention can be thermally cured together with the sealing material in the sealing step even in an uncured state, the step for thermally curing the adhesive layer 2 There is no need to add a new one.

  The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin may be included as a resin component. Good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

  In the embodiment described above, the dicing tape with an adhesive layer in which the adhesive layer is laminated on the dicing tape and the film for manufacturing a semiconductor device laminated with the separator have been described. However, the film for manufacturing a semiconductor device of the present invention may not have an adhesive layer laminated thereon. That is, the film for manufacturing a semiconductor device of the present invention may be a film for manufacturing a semiconductor device in which a dicing tape is laminated on a separator at a predetermined interval. In this case, the manufacturing method of the film for manufacturing a semiconductor device includes a dicing tape with an adhesive layer in which an adhesive layer is laminated on a dicing tape, and a separator with a laminate in which the adhesive layer is laminated to a separator. A step of preparing a film, and a step of cutting the film with a separator into a size corresponding to a semiconductor wafer to be attached; the cutting is performed by measuring the thickness of the separator from the dicing tape side. The depth is 2/3 or less. In addition, as a method of manufacturing a semiconductor device when using a film for manufacturing a semiconductor device in which a dicing tape is laminated on a separator at a predetermined interval, a step of peeling the separator from the film for manufacturing a semiconductor device, And at least a step of attaching a semiconductor wafer. After the step of adhering the semiconductor wafer on the dicing tape, for example, the step of dicing the semiconductor wafer, the step of picking up the semiconductor element obtained by dicing, and flipping the semiconductor element onto the adherend A semiconductor device can be manufactured through a chip connecting process.

The semiconductor device manufactured using the film for manufacturing a semiconductor device (semiconductor device of flip chip mounting) has an adhesive layer attached to the back surface of the semiconductor chip, and therefore performs various markings with excellent visibility. Can do. In particular, even if the marking method is a laser marking method, marking can be performed with an excellent contrast ratio, and various information (character information, Zuken information, etc.) applied by laser marking can be seen well. is there. In addition, when performing laser marking, a well-known laser marking apparatus can be utilized. As the laser, various lasers such as a gas laser, a solid laser, and a liquid laser can be used. Specifically, the gas laser is not particularly limited, and a known gas laser can be used, but a carbon dioxide laser (CO ₂ laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser). Etc.) are preferred. The solid laser is not particularly limited, and a known solid laser can be used, but a YAG laser (Nd: YAG laser or the like) and a YVO ₄ laser are preferable.

  Since the semiconductor device manufactured using the film for manufacturing a semiconductor device of the present invention is a semiconductor device mounted by a flip chip mounting method, it is thinner and smaller than a semiconductor device mounted by a die bonding mounting method. It has become a shape. For this reason, it can use suitably as various electronic devices and electronic components, or those materials and members. Specifically, as an electronic device using the flip-chip mounted semiconductor device of the present invention, a so-called “mobile phone” or “PHS”, a small computer (for example, a so-called “PDA” (personal digital assistant)), a so-called "Notebook PC", so-called "Netbook (trademark)", so-called "wearable computer", etc.), "mobile phone" and small electronic devices integrated with a computer, so-called "digital camera (trademark)", so-called "digital" Mobile devices such as video cameras, small TVs, small game devices, small digital audio players, so-called “electronic notebooks”, so-called “electronic dictionaries”, so-called “electronic books” electronic device terminals, small digital-type watches, etc. Type electronic devices (portable electronic devices), but of course It may be an electronic device other than a mobile type (such as a setting type) (for example, a so-called “disc top PC”, a flat-screen TV, a recording / playback electronic device (hard disk recorder, DVD player, etc.), a projector, a micromachine, etc.) . Examples of materials and members of electronic components or electronic devices / electronic components include so-called “CPU” members, members of various storage devices (so-called “memory”, hard disks, etc.), and the like.

  In the above-described embodiment, the case where the film for manufacturing a semiconductor device is used for manufacturing a flip-chip type semiconductor device has been described. However, the film for manufacturing a semiconductor device of the present invention is not limited to this example, and may be used for manufacturing a semiconductor device other than a flip-chip type semiconductor device. For example, after separating the separator from the film for manufacturing a semiconductor device, the adhesive layer of the dicing tape with an adhesive layer and the surface of the semiconductor wafer (semiconductor chip) may be bonded together. In this case, the dicing tape with an adhesive layer provided in the film for manufacturing a semiconductor device can be used as a conventionally known dicing die-bonding film.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In each example, all parts are based on weight unless otherwise specified.

Example 1
<Preparation of adhesive layer>
Acrylate ester-based polymer (trade name “Paracron W-197CM” manufactured by Negami Kogyo Co., Ltd.) containing ethyl acrylate-methyl methacrylate as a main component: 100 parts of epoxy resin (trade name “Epicoat 1004” JER Corporation) 113 parts, phenol resin (trade name “Millex XLC-4L” manufactured by Mitsui Chemicals, Inc.): 121 parts, spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.): 246 parts, dye 1 ( Product name “OIL GREEN 502” manufactured by Orient Chemical Industry Co., Ltd .: 5 parts, Dye 2 (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.): 5 parts were dissolved in methyl ethyl ketone, and the solid content concentration was 23 A solution of the adhesive composition to be 6% by weight was prepared.

  The adhesive composition solution was applied on a separator made of a polyethylene terephthalate film having a thickness of 50 μm after silicone release treatment, and then dried at 130 ° C. for 2 minutes to obtain a thickness (average thickness) on the separator. ) A film A on which a 20 μm adhesive layer A was laminated was prepared.

<Production of film for manufacturing semiconductor devices>
1. Production of Film with Separator Adhesive of Dicing Tape (trade name “V-8-T” manufactured by Nitto Denko Corporation; average thickness of substrate: 65 μm, average thickness of adhesive layer: 10 μm) A film A with a separator in which a dicing tape with an adhesive layer was laminated on the separator was prepared by laminating on the layer using a hand roller.

2. Precut processing The film A with a separator was precut using a circular Thomson blade to obtain a film for manufacturing a semiconductor device. The precut depth was adjusted by introducing a spacer inside and outside the Thomson blade. Specifically, the spacer was introduced so that the depth of cut into the separator was 13 μm.

  In the film for manufacturing a semiconductor device according to Example 1, the thickness (average thickness) of the adhesive layer is 20 μm. In addition, the dicing tape (trade name “V-8-T” manufactured by Nitto Denko Corporation) has a base material thickness (average thickness) of 65 μm and a pressure-sensitive adhesive layer thickness (average thickness) of 10 μm. And the total thickness is 75 μm. Therefore, in the film for manufacturing a semiconductor device according to Examples 1 to 3, the ratio of the thickness of the adhesive layer to the thickness of the pressure-sensitive adhesive layer of the dicing tape (average thickness ratio) is 20/10. The ratio (average thickness ratio) between the thickness of the agent layer and the thickness of the dicing tape (total thickness of the base material and the pressure-sensitive adhesive layer) is 20/75.

(Example 2)
A film for manufacturing a semiconductor device according to Example 2 was obtained in the same manner as in Example 1 except that a spacer was introduced so that the depth of cut into the separator in the precut processing was 20 μm.

(Comparative Example 1)
A film for manufacturing a semiconductor device according to Comparative Example 1 was obtained in the same manner as in Example 1 except that a spacer was introduced so that the depth of cut into the separator in the precut processing was 27 μm.

<Evaluation>
The separator peeling evaluation shown below was performed for the films for manufacturing semiconductor devices of Example 1, Example 2, and Comparative Example 1.

  A semiconductor wafer (diameter 8 inches, thickness 0.6 mm; silicon mirror wafer) was subjected to back surface polishing, and a mirror wafer having a thickness of 0.2 mm was used as a workpiece. While peeling the separator from the film for manufacturing a semiconductor device, a mirror wafer (work) was roll-pressed and bonded onto the adhesive layer at 70 ° C. Semiconductor wafer grinding conditions and bonding conditions are as follows.

(Semiconductor wafer grinding conditions)
Grinding equipment: Product name “DFG-8560” manufactured by Disco Corporation Semiconductor wafer: 8 inch diameter (back grinding from 0.6 mm to 0.2 mm thickness)
(Bonding conditions)
Pasting device: Trade name “MA-3000III” manufactured by Nitto Seiki Co., Ltd. Pasting speed meter: 10 mm / min
Pasting pressure: 0.15 MPa
Stage temperature at the time of pasting: 70 ° C

  With this wafer mount, the wafer mountability was evaluated with “◯” when the separator was peeled off satisfactorily and “x” when the separator could not be satisfactorily removed. The results are shown in Table 1.

  From Table 1, in the film for semiconductor device manufacture which concerns on Example 1, 2, the separator was able to be peeled favorable. On the other hand, in the film for manufacturing a semiconductor device according to Comparative Example 1, the separator was torn from the cut portion, and the separator could not be peeled well.

DESCRIPTION OF SYMBOLS 1 Dicing tape with an adhesive layer 2 Adhesive layer 3 Dicing tape 31 Base material 32 Adhesive layer 40 Film for semiconductor device manufacture 42 Separator 44 Notch 33 The part corresponding to the sticking part of a semiconductor wafer 4 Semiconductor wafer 5 Semiconductor chip 51 Semiconductor Bump formed on the circuit surface side of the chip 5 6 Adhering member 61 Conductive material for bonding adhered to the connection pad of the adherend 6

Claims (1)

A method for manufacturing a film for manufacturing a semiconductor device, comprising:
The semiconductor device manufacturing film is:
(A) A dicing tape with an adhesive layer in which an adhesive layer is laminated on a dicing tape is laminated on a separator at a predetermined interval with the adhesive layer as a bonding surface,
(B) The separator has a cut along the outer periphery of the dicing tape,
(C) The depth of the notch is 2/3 or less of the thickness of the separator,
(D) The adhesive layer is added with a colorant, and is adhered to the back surface of a semiconductor chip included in a flip-chip mounted semiconductor device;
The manufacturing method of the film for manufacturing a semiconductor device is as follows:
A step of preparing a film with a separator in which a dicing tape with an adhesive layer in which an adhesive layer to which a colorant is added is laminated on a dicing tape is laminated on the separator with the adhesive layer as a bonding surface;
Cutting the film with a separator into a size corresponding to a semiconductor wafer to be attached; and
The said cutting is performed from the said dicing tape side to the depth of 2/3 or less of the thickness of the said separator, The manufacturing method of the film for semiconductor device manufacture characterized by the above-mentioned.

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