JP5819899B2 - Flip chip type film for semiconductor back surface and use thereof - Google Patents

Description

  The present invention relates to a flip-chip type semiconductor back film and a dicing tape-integrated semiconductor back film. The flip chip type semiconductor back film is used for protecting the back surface of a semiconductor element such as a semiconductor chip and improving the strength. The present invention also relates to a method for manufacturing a semiconductor device using a dicing tape-integrated film for semiconductor back surface, and a flip-chip mounted semiconductor device.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. Therefore, a flip chip type semiconductor device in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connection) is widely used as a semiconductor device and its package. The flip chip connection is fixed in such a manner that the circuit surface of the semiconductor chip faces the electrode forming surface of the substrate. In such a semiconductor device or the like, the back surface of the semiconductor chip may be protected by a back film to prevent the semiconductor chip from being damaged (see Patent Document 1). In addition, laser marking may be applied to the back film to improve product identification (see Patent Document 2).

JP 2007-158026 A JP 2008-166451 A

  By the way, with the progress of semiconductor technology, the performance of semiconductor devices is increasing day by day. Further, as the processing speed of the semiconductor device improves, the amount of heat generated from the semiconductor device tends to increase. When the back surface of a semiconductor element such as a semiconductor chip is covered with a back film, heat dissipation from the back surface side of the semiconductor element will be hindered, so heat is stored in the semiconductor device and a load is applied to shorten the product life. There is a fear. In order to cope with this, a method of promoting heat dissipation from the back film by increasing the surface area with the back film surface as an uneven shape may be considered. However, when an uneven shape is imparted to the back film surface, there is a possibility that the laser marking property and the adhesiveness with a semiconductor wafer or the like may be lowered.

  The present invention has been made in view of the above problems, and its purpose is to provide a case where it is disposed on the back surface of a semiconductor element while maintaining laser marking properties on the surface and adhesion to a semiconductor wafer or the like. An object of the present invention is to provide a flip chip type semiconductor back film and a dicing tape integrated semiconductor back film capable of efficiently dissipating heat from a semiconductor element to the outside.

  Another object of the present invention is to provide a method for manufacturing a semiconductor device, which has high discriminability by laser marking, etc., and can effectively extend the life of a product by efficiently dissipating heat generated from a semiconductor element. There is to do.

  As a result of studying the above conventional problems, the inventors of the present application maintain the laser marking property and the adhesion to the semiconductor wafer by filling the flip chip type semiconductor back film with a specific thermal conductive filler. However, the present inventors have found that heat dissipation from the semiconductor element can be enhanced and completed the present invention.

  That is, the flip chip type semiconductor back film according to the present invention is a flip chip type semiconductor back film disposed on the back side of a semiconductor element flip-chip connected on an adherend, and is made of resin and thermal conductivity. Including a filler, the content of the thermally conductive filler is 50% by volume or more, the average particle size of the thermally conductive filler is a value of 30% or less with respect to the thickness of the film, and the maximum particle size Is 80% or less.

  The flip chip type semiconductor back film of the present invention has a function of protecting the semiconductor element by being disposed on the back surface of the semiconductor element flip chip connected on the adherend. In addition, the flip chip type semiconductor back film includes a heat conductive filler together with a resin, and the content of the heat conductive filler is 50% by volume or more, so that the heat conductivity of the film itself is high and excellent. Heat dissipation can be exhibited, and as a result, heat generated from the semiconductor element can be efficiently dissipated to the outside even when disposed on the back surface of the semiconductor element. The back surface of the semiconductor element means a surface opposite to the surface on which a circuit is formed.

  Here, as the form of the thermally conductive filler, the larger the particle size, the higher the proportion of the region having good thermal conductivity in the flip chip semiconductor back film, and the flip chip semiconductor back surface. The thermal conductivity of the entire film can be improved. On the other hand, if the particle size of the thermally conductive filler is too large, the thermal conductivity of the film is improved, but the shape of the thermally conductive filler on the film surface has an effect, and the film surface is flat. Sexuality will be impaired. In the flip chip type semiconductor back film, the average particle size and the maximum particle size are 30% or less and 80% of the thickness of the flip chip type semiconductor back film, respectively, as the form of the thermally conductive filler. Since the following values are adopted, the influence of the heat conductive filler shape on the surface shape of the film is minimized while the heat conductivity of the heat conductive filler is maximized. Furthermore, by adopting such a form of the heat conductive filler, the content of the heat conductive filler can be set to a high value of 50% by volume or more. When the average particle size and the maximum particle size are set to a value exceeding 30% and a value exceeding 80%, respectively, the film surface unevenness becomes excessively large and the laser marking property decreases. In other words, the adhesion to a semiconductor wafer or the like is reduced. In the film, the content of the heat conductive filler, the average particle diameter, and the maximum particle diameter are set to predetermined values, so that the heat conductive filler is in a relatively densely packed state. Therefore, the thermal conductivity of the film, and thus the heat dissipation, can be improved to a high level. In addition, by achieving the packing state of the heat conductive filler, the heat conductive filler is leveled to some extent near the surface of the film, and the flatness of the film surface can be maintained. In the present specification, the average particle size and the maximum particle size of the thermally conductive filler are values obtained by measurement using a laser diffraction type particle size distribution measuring device.

  The thermal conductivity of the flip chip type semiconductor back film is preferably 2 W / mK or more. With such thermal conductivity, heat generated from the semiconductor element can be more efficiently dissipated to the outside.

  In the flip chip type semiconductor back film, the surface roughness (Ra) of the surface opposite to the surface facing the back surface of the semiconductor is preferably 300 nm or less. Since the film employs a heat conductive filler having a specific content and form, the surface roughness (Ra) of the film can be 300 nm or less, and as a result, the laser marking property can be further improved. In addition, it is possible to prevent a decrease in adhesion to a semiconductor wafer or the like. In addition, in this specification, surface roughness (Ra) means the value obtained by measuring based on JISB0601, and depends on the example as described in an Example in detail.

  The content of the thermally conductive filler is 50 to 80% by volume, the average particle size of the thermally conductive filler is 10 to 30% of the film thickness, and the maximum particle size is 40. A value of ˜80% is preferred. By specifically setting the content and form of the heat conductive filler to such a specific value, the heat dissipation of the flip chip type semiconductor backside film is improved, excellent laser marking properties and excellent semiconductor wafers, etc. Adhesion can be achieved.

  The flip-chip type semiconductor back film may contain a heat conductive filler having a different average particle size as the heat conductive filler. Among the heat conductive fillers having different average particle diameters, the heat conductive filler having a smaller average particle diameter is filled between the heat conductive fillers having larger particle diameters, and the region having good heat conductivity is expanded. Therefore, the heat dissipation of the film can be further improved. Two kinds of average particle diameters may be adopted, or three or more kinds of average particle diameters may be adopted. In addition, when using thermally conductive fillers having different average particle diameters, the average particle diameter of the thermally conductive filler of the present invention refers to the average of the average particle diameters of the thermally conductive fillers having different average particle diameters, The maximum particle size of the thermally conductive filler refers to the largest particle size among all the thermally conductive fillers contained in the film.

  The dicing tape integrated semiconductor back film according to the present invention is a dicing tape integrated semiconductor back film in which the flip chip type semiconductor back film is laminated on a dicing tape, and the dicing tape is a base film. In this structure, an adhesive layer is laminated on the material, and the flip chip type semiconductor back film is laminated on the adhesive layer of the dicing tape.

  Since the dicing tape-integrated film for semiconductor back surface having the above-described configuration is formed integrally with the dicing tape and the film for flip chip type semiconductor back surface, the dicing process for dicing the semiconductor wafer to produce a semiconductor element and the subsequent pickup It can also be used for the process. That is, when the dicing tape is attached to the back surface of the semiconductor wafer before the dicing step, the film for semiconductor back surface can also be attached, so the step of attaching only the film for semiconductor back surface (film attachment for semiconductor back surface) No wearing process is required. As a result, the number of processes can be reduced. Moreover, since the semiconductor back film protects the back surface of the semiconductor wafer and the semiconductor element formed by dicing, damage to the semiconductor element can be reduced or prevented in the dicing process and subsequent processes (pickup process, etc.). Can do. As a result, the manufacturing yield of the flip chip type semiconductor device can be improved.

  The method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device using the dicing tape-integrated film for semiconductor back surface, wherein the dicing tape-integrated film for semiconductor back surface is used for a flip chip type semiconductor back surface. A step of adhering a semiconductor wafer on the film, a step of dicing the semiconductor wafer to form a semiconductor element, and peeling the semiconductor element from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film. And a step of flip-chip connecting the semiconductor element onto the adherend.

  In the above method, since the dicing tape-integrated film for semiconductor back surface is adhered to the back surface of the semiconductor wafer, the step of adhering only the film for semiconductor back surface (film pasting step for semiconductor back surface) is not required. Further, in the semiconductor wafer dicing and the pickup of the semiconductor element formed by the dicing, the semiconductor wafer and the back surface of the semiconductor element are protected by the film for semiconductor back surface, so that damage or the like can be prevented. As a result, a manufacturing yield can be improved and a flip chip type semiconductor device can be manufactured.

  The flip chip type semiconductor device according to the present invention is manufactured by a method for manufacturing the semiconductor device.

  Since the film for flip chip type semiconductor back surface of the present invention is disposed on the back surface of the semiconductor element flip-chip connected on the adherend, it functions to protect the semiconductor element. In addition, the flip chip type semiconductor back film includes a heat conductive filler together with a resin, and the content of the heat conductive filler is 50% by volume or more. Heat dissipation can be exhibited, and as a result, heat from the semiconductor element can be efficiently dissipated even when disposed on the back surface of the semiconductor element. In the flip chip type semiconductor back film, the average particle size and the maximum particle size are 30% or less and 80% or less, respectively, with respect to the thickness of the flip chip type semiconductor back film. Therefore, it is possible to minimize the influence of the heat conductive filler shape on the surface shape of the film while maximizing the heat conductivity of the heat conductive filler.

  Further, according to the dicing tape-integrated film for semiconductor back surface of the present invention, since the dicing tape and the film for flip chip type semiconductor back surface are integrally formed, a dicing process for manufacturing a semiconductor element by dicing the semiconductor wafer It can also be used for the subsequent pick-up process. As a result, a step of attaching only the film for semiconductor back surface (film attaching step for semiconductor back surface) is not required. Further, in the subsequent dicing process and pick-up process, the film for semiconductor back surface is adhered to the back surface of the semiconductor wafer or the back surface of the semiconductor element formed by dicing, so that the semiconductor wafer and the semiconductor element can be effectively protected. And damage to the semiconductor element can be suppressed or prevented. In addition, after the bonding of the semiconductor element to the substrate, etc., the flip chip type semiconductor back film exhibits a protective function for the back surface of the semiconductor element and quickly dissipates the heat from the semiconductor element, thereby providing good laser marking properties. Therefore, the discriminability of the semiconductor element or the like can be improved, and the adhesion to the semiconductor wafer or the like can be secured.

  Furthermore, according to the method for manufacturing a semiconductor device of the present invention, since the dicing tape-integrated film for semiconductor back surface is attached to the back surface of the semiconductor wafer, a step of attaching only the film for semiconductor back surface is not required. Further, in the semiconductor wafer dicing and the pickup of the semiconductor element formed by the dicing, the semiconductor wafer and the back surface of the semiconductor element are protected by the film for semiconductor back surface, so that damage or the like can be prevented. From the above, it is possible to efficiently manufacture a flip-chip type semiconductor device that is excellent in heat dissipation and excellent in laser marking properties and adhesiveness to a semiconductor wafer while improving the manufacturing yield.

It is a cross-sectional schematic diagram which shows an example of the film for dicing tape integrated semiconductor back surfaces of this invention. It is a cross-sectional schematic diagram which shows an example of the manufacturing method of the semiconductor device using the film for dicing tape integrated semiconductor back surfaces of this invention.

  One embodiment of the present invention will be described with reference to FIG. 1, but the present invention is not limited to these examples. FIG. 1 is a schematic cross-sectional view showing an example of a dicing tape-integrated film for semiconductor back surface according to the present embodiment. Note that in this specification, parts unnecessary for description are omitted in the drawings, and there are parts illustrated in an enlarged or reduced manner for ease of description.

(Dicing tape integrated film for semiconductor backside)
As shown in FIG. 1, the dicing tape-integrated film for semiconductor back surface 1 includes a dicing tape 3 in which a pressure-sensitive adhesive layer 32 is provided on a base material 31, and a flip-chip type semiconductor provided on the pressure-sensitive adhesive layer. The backside film (hereinafter, sometimes referred to as “semiconductor backside film”) 2 is provided. Further, as shown in FIG. 1, the dicing tape-integrated film for semiconductor back surface of the present invention has a semiconductor only on the portion 33 corresponding to the bonded portion of the semiconductor wafer on the adhesive layer 32 of the dicing tape 3. Although the structure in which the film 2 for back surfaces was formed may be sufficient, the structure in which the film for semiconductor back surfaces was formed in the whole surface of the adhesive layer 32 may be sufficient, and it is larger than the part 33 corresponding to the adhesion part of a semiconductor wafer. And the structure by which the film for semiconductor back surfaces was formed in the part smaller than the whole surface of the adhesive layer 32 may be sufficient. In addition, the surface (surface of the side stuck on the back surface of a wafer) of the film 2 for semiconductor back surfaces may be protected by the separator etc. until it is stuck on the wafer back surface.

(Flip chip type film for semiconductor backside)
The film 2 for semiconductor back surface has a film-like form. The film for semiconductor back surface 2 is normally in an uncured state (including a semi-cured state) in the form of a dicing tape integrated semiconductor back surface film as a product, and the dicing tape integrated film for semiconductor back surface is attached to a semiconductor wafer. After being applied, it is heat-cured (details will be described later).

  The flip chip type semiconductor back film 2 of the present invention contains a heat conductive filler. The thermal conductivity of the thermally conductive filler is not particularly limited as long as the thermal conductivity can be imparted to the semiconductor back film 2, but is preferably 12 W / mK or more, more preferably 15 to 70 W / mK, particularly Preferably it is 25-70 W / mK. When the thermal conductivity is 12 W / mK or more, it is possible to impart a thermal conductivity of at least 1.5 W / mK to the film 2 for semiconductor back surface. However, if the thermal conductivity of the thermally conductive filler exceeds 70 W / mK, the cost may increase.

  The heat conductive filler is not particularly limited, and examples thereof include electrically insulating materials such as aluminum oxide, zinc oxide, magnesium oxide, boron nitride, magnesium hydroxide, aluminum nitride, and silicon carbide. These can be used alone or in combination of two or more. Among these, aluminum oxide has high conductivity, is excellent in dispersibility in the film for semiconductor back surface 2, and is preferable from the viewpoint of availability.

  Content of the said heat conductive filler is 50 volume% or more in the film 2 for semiconductor back surfaces, Preferably it is 50-80 volume%, More preferably, it is 55-75 volume%. By setting the content of the heat conductive filler in the above range, the heat conductivity of the semiconductor back film itself can be increased and excellent heat dissipation can be achieved, and as a result, disposed on the back surface of the semiconductor element. Even in such a case, heat generated from the semiconductor element can be efficiently dissipated to the outside. When the content is less than 50% by volume, the thermal conductivity of the film 2 for semiconductor back surface is lowered, heat dissipation from the semiconductor element becomes insufficient, and heat is accumulated in the semiconductor element or the like. On the other hand, by making the content 80% by volume or less, it is possible to prevent a relative decrease in the content of the adhesive component in the semiconductor back surface film 2 and to wet the semiconductor back surface film 2 with respect to a semiconductor wafer or the like. And adhesiveness can be ensured.

  In the film 2 for semiconductor back surface, the average particle diameter of the thermally conductive filler is a value of 30% or less, preferably 10 to 30%, with respect to the thickness of the flip chip type semiconductor back film. More preferably, the value is 15 to 25%. The maximum particle size of the thermally conductive filler is a value of 80% or less, preferably a value of 40 to 80%, more preferably 50 to 70% with respect to the thickness of the film for semiconductor back surface. Value. By setting the particle size of the thermally conductive filler within the above range, the effect of the thermally conductive filler shape on the surface shape of the film for the backside of the semiconductor is minimized while maximizing the thermal conductivity of the thermally conductive filler. Can be suppressed. Furthermore, by using the heat conductive filler having the particle size as described above, the content of the heat conductive filler can be set to a high value of 50% by volume or more. When the average particle diameter and the maximum particle diameter are set to a value exceeding 30% and a value exceeding 80% with respect to the thickness of the film, the unevenness of the film surface becomes too large and the laser marking property is lowered. The adhesiveness of the film for semiconductor back surface to a semiconductor wafer or the like is lowered.

  The average particle diameter of the heat conductive filler is not particularly limited as long as it has the above-described ratio with respect to the thickness of the film for semiconductor back surface. Specifically, the thickness of the film for semiconductor back surface is 10 μm. In this case, the thickness is preferably 0.05 to 3 μm, and more preferably 0.1 to 2 μm. Further, the maximum particle size of the thermally conductive filler is not particularly limited as long as it has a value of the above-described ratio with respect to the thickness of the film for semiconductor back surface, but specifically 0.2 to 8 μm. It is preferable that it is 0.5-7 micrometers. When the average particle size and the maximum particle size are equal to or more than the lower limit of the above range, an excessive decrease in the thermal conductivity of the film for semiconductor back surface 2 can be suppressed, and heat dissipation and heat resistance can be improved. On the other hand, when the average particle size and the maximum particle size are less than or equal to the upper limit of the above range, it is possible to suppress a decrease in laser marking properties and adhesiveness. The average particle diameter is a value determined by a laser diffraction particle size distribution analyzer (manufactured by HORIBA, apparatus name: LA-910).

  Furthermore, as the heat conductive filler, two or more kinds of fillers having different average particle diameters may be used. In consideration of the content of the heat conductive filler, the heat conductivity of the film for semiconductor back surface and the ease of adjusting the surface flatness, etc., it is preferable to use two types of fillers having different average particle sizes. Also in this case, it is not particularly limited as long as it satisfies a predetermined ratio with respect to the thickness of the film for semiconductor back surface, and as the average particle diameter, one heat conductive filler A is preferably 0.01 to 0.5 μm, more preferably. The other heat conductive filler B is preferably set to 0.5 to 5 μm, more preferably 0.5 to 3 μm. By using thermally conductive fillers having an average particle size in the numerical value range and different from each other, the filling rate of the thermally conductive filler in the film for semiconductor back surface 2 can be improved. Thereby, it becomes possible to provide the heat dissipation excellent in the film 2 for semiconductor back surfaces. Moreover, when using two types of thermally conductive fillers having different average particle sizes, the blending ratio of the thermally conductive filler B is based on the total amount of the thermally conductive filler A and the thermally conductive filler B. A volume ratio of 30 to 90% is preferable, and a ratio of 40 to 60% is more preferable.

  The particle shape of the heat conductive filler is not particularly limited, and examples thereof include a spherical shape, an elliptic sphere shape, a flat shape, a needle shape, a fiber shape, a flake shape, a spike shape, and a coil shape. Among these shapes, the spherical shape is preferable in that the dispersibility and filling rate of the heat conductive filler in the film can be improved. In the present invention, thermally conductive fillers having different particle shapes may be contained in the film.

  Here, the film for semiconductor back surface may be a single layer or a laminated film in which a plurality of layers are laminated. However, when the film for semiconductor back surface is a laminated film, the proportion of the thermally conductive filler is the laminated film. It should just be in the said range as a whole.

  As described above, the thermal conductivity of the film 2 for semiconductor back surface is at least 1.5 W / mK, preferably 2 W / mK or more, more preferably 4 W / mK or more by filling with the heat conductive filler. It is preferably 5 W / mK or more. With such thermal conductivity, heat generated from the semiconductor element can be more efficiently dissipated to the outside.

  The surface roughness (Ra) before thermosetting of the film 2 for semiconductor back surface is not particularly limited as long as the laser marking property and the adhesion to the semiconductor wafer can be maintained, and is preferably 300 nm or less, and 250 nm. More preferably, it is more preferably 200 nm or less. When the surface roughness (Ra) of the film for semiconductor back surface is 300 nm or less, the adhesiveness and laser marking property of the film for semiconductor back surface can be improved.

  The film for semiconductor back surface 2 according to the present embodiment includes a resin in addition to the above-described thermally conductive filler. Furthermore, the film 2 for semiconductor back surface preferably contains a thermosetting resin as the resin and a thermosetting acceleration catalyst, and more preferably contains a thermoplastic resin. By containing a thermosetting resin, the film for semiconductor back surface can effectively exhibit the function as an adhesive layer.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET (polyethylene terephthalate) and PBT (polybutylene terephthalate), polyamideimide resins, or fluorine Examples thereof include resins. A thermoplastic resin can be used individually or in combination of 2 or more types. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and is linear or branched having 30 or less carbon atoms (preferably 4 to 18 carbon atoms, more preferably 6 to 10 carbon atoms, and particularly preferably 8 or 9 carbon atoms). And polymers having one or more esters of acrylic acid or methacrylic acid having an alkyl group as a component. That is, in the present invention, acrylic resin has a broad meaning including methacrylic resin. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, pentyl group, isopentyl group, hexyl group, heptyl group, and 2-ethylhexyl group. Octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, dodecyl group (lauryl group), tridecyl group, tetradecyl group, stearyl group, octadecyl group and the like.

  Further, the other monomer for forming the acrylic resin (a monomer other than an alkyl ester of acrylic acid or methacrylic acid having an alkyl group with 30 or less carbon atoms) is not particularly limited. For example, acrylic acid , Methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid-containing monomer, such as maleic anhydride or itaconic anhydride, etc. ) 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (meta ) Acrylic acid 10-hydroxyde , Hydroxyl group-containing monomers such as 12-hydroxylauryl (meth) acrylic acid or (4-hydroxymethylcyclohexyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane Sulfonic acid, methacrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate or sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or phosphoric acid group content such as 2-hydroxyethyl acryloyl phosphate And monomers. In addition, (meth) acrylic acid means acrylic acid and / or methacrylic acid, and (meth) of the present invention has the same meaning.

  Examples of the thermosetting resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, and the like. A thermosetting resin can be used individually or in combination of 2 or more types. As the thermosetting resin, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is particularly suitable. Moreover, a phenol resin can be used suitably as a hardening | curing agent of an epoxy resin.

  The epoxy resin is not particularly limited. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy. Bifunctional epoxy such as resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin Epoxy resin such as resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin It can be used.

  As the epoxy resin, among the above examples, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. A phenol resin can be used individually or in combination of 2 or more types. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 equivalent to 1.2 equivalent. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  As content of the said thermosetting resin, it is preferable that it is 40 to 90 weight% with respect to all the resin components in the film for semiconductor back surfaces, and it is more preferable that it is 50 to 90 weight%. More preferably, it is 60% by weight or more and 90% by weight or less. By making the content 40% by weight or more, the thermosetting shrinkage can be easily made 2% by volume or more. Also, in flip chip mounting, a mold resin for sealing the entire semiconductor package is not used, and only a bump connection portion between the adherend and the semiconductor element is sealed with a sealing resin called an underfill. It is common. By adopting the above content, when this sealing resin is heat-cured, the film for semiconductor back surface can be sufficiently heat-cured, and it is securely bonded and fixed to the back surface of the semiconductor element so that there is no peeling. A chip-type semiconductor device can be manufactured. On the other hand, by setting the content to 90% by weight or less, flexibility can be imparted to the film.

  The thermosetting acceleration catalyst is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  The semiconductor back film is preferably formed of a resin composition containing an epoxy resin and a phenol resin, or a resin composition containing an epoxy resin, a phenol resin and an acrylic resin. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured.

  It is important that the film 2 for semiconductor back surface has adhesiveness (adhesion) to the back surface (circuit non-formed surface) of the semiconductor wafer. The film for semiconductor back surface 2 can be formed of, for example, a resin composition containing an epoxy resin as a thermosetting resin. In order to crosslink the semiconductor back film 2 to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  The adhesive strength of the film for semiconductor back surface to the semiconductor wafer (23 ° C., peeling angle 180 °, peeling speed 300 mm / min) is preferably in the range of 0.5 N / 20 mm to 15 N / 20 mm, and 0.7 N / 20 mm to 10 N / 20 mm. The range of is more preferable. By setting it to 0.5 N / 20 mm or more, it is stuck to a semiconductor wafer or a semiconductor element with excellent adhesion, and the occurrence of floating or the like can be prevented. Further, it is possible to prevent the occurrence of chip jumping during dicing of the semiconductor wafer. On the other hand, by setting it to 15 N / 20 mm or less, it can be easily peeled from the dicing tape.

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent, a metal salt Examples thereof include a system crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent. As the crosslinking agent, an isocyanate crosslinking agent or an epoxy crosslinking agent is suitable. Moreover, the said crosslinking agent can be used individually or in combination of 2 or more types.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In addition, the usage-amount in particular of a crosslinking agent is not restrict | limited, According to the grade to bridge | crosslink, it can select suitably. Specifically, the amount of the crosslinking agent used is, for example, usually 7 parts by weight or less (for example, 0.05 parts by weight) with respect to 100 parts by weight of the polymer component (particularly, the polymer having a functional group at the molecular chain end). ~ 7 parts by weight). When the amount of the crosslinking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesive force is lowered, which is not preferable. From the viewpoint of improving cohesive strength, the amount of crosslinking agent used is preferably 0.05 parts by weight or more with respect to 100 parts by weight of the polymer component.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The film for semiconductor back surface is preferably colored. Thereby, excellent marking properties and appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained. Thus, since the colored film for semiconductor back surface has excellent marking properties, the film for semiconductor back surface is applied to the surface of the semiconductor element or the non-circuit surface side of the semiconductor device using the semiconductor element. Accordingly, by using various marking methods such as a printing method and a laser marking method, marking can be performed and various information such as character information and graphic information can be given. In particular, by controlling the coloring color, it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility. Further, since the film for semiconductor back surface is colored, the dicing tape and the film for semiconductor back surface can be easily distinguished, and workability and the like can be improved. Further, for example, as a semiconductor device, it is possible to color-code according to products. When the film for semiconductor back surface is colored (when it is not colorless or transparent), the color exhibited by coloring is not particularly limited, but is preferably a dark color such as black, blue, red, etc., particularly black It is preferable that

In the present embodiment, the dark, ^basically, L ^* a * ^{b * L} defined by the color system ^* is 60 or less (0 to 60) [preferably 50 or less (0 to 50) More preferably, it means a dark color of 40 or less (0 to 40)].

Also, black and ^basically, L ^* a * ^{b * L} defined by the color system ^* is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a black color which is (0-25) below. In black, a ^* and b ^* defined in the L ^* a ^* b ^* color system can be appropriately selected according to the value of L ^* . As a ^* and b ^* , for example, both are preferably −10 to 10, more preferably −5 to 5, particularly in the range of −3 to 3 (among others 0 or almost 0). Is preferred.

In the present embodiment, L ^* , a ^* , and b ^* defined by the L ^* a ^* b ^* color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated | required by measuring using. The L ^* a ^* b ^* color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L ^* a ^* b ^* ) color system. It means that. The L ^* a ^* b ^* color system is defined in JIS Z 8729 in the Japanese Industrial Standard.

  When coloring the film for semiconductor back surface, a color material (colorant) can be used according to the target color. As such a color material, various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable. As the color material, any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more. As the dye, any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used. Also, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.

  In particular, when a dye is used as a coloring material, the dye is dissolved or uniformly dispersed in the semiconductor back film, so that the film for semiconductor back (and hence dicing tape) having a uniform or almost uniform coloring density is obtained. Integrated film for semiconductor back surface) can be easily manufactured. Therefore, when a dye is used as the coloring material, the film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface can make the coloring density uniform or almost uniform, and can improve the marking property and appearance.

  Although it does not restrict | limit especially as a black color material, For example, it can select suitably from an inorganic black pigment and a black dye. In addition, as a black color material, a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be. Black color materials can be used alone or in combination of two or more. Of course, the black color material can be used in combination with a color material other than black.

  Specifically, as the black color material, for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.

  In the present invention, as the black color material, C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C. I. Black dyes such as Disperse Black 1, 3, 10, and 24; I. Black pigments such as CI Pigment Black 1 and 7 can also be used.

  As such a black color material, for example, the product name “Oil Black BY”, the product name “OilBlack BS”, the product name “OilBlack HBB”, the product name “Oil Black 803”, the product name “Oil Black 860”, The product name “Oil Black 5970”, the product name “Oil Black 5906”, the product name “Oil Black 5905” (manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.

  Examples of the color material other than the black color material include a cyan color material, a magenta color material, and a yellow color material. Examples of cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.

  In the magenta color material, examples of the magenta dye include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.

  In the magenta color material, examples of the magenta pigment include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc. 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. C.I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; I. Bat red 1, 2, 10, 13, 15, 23, 29, 35 and the like.

  Examples of yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 10, 12, 13, 14, 15, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Examples thereof include yellow pigments such as Vat Yellow 1, 3 and 20.

  Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more. When two or more kinds of various color materials such as a cyan color material, a magenta color material, and a yellow color material are used, the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.

  When coloring the film 2 for semiconductor back surfaces, the coloring form in particular is not restrict | limited. For example, the film for semiconductor back surface may be a single layer film-like material to which a colorant is added. Further, it may be a laminated film in which at least a resin layer formed of a thermosetting resin and a colorant layer are laminated. In addition, when the film 2 for semiconductor back surfaces is a laminated film of a resin layer and a colorant layer, the film 2 for semiconductor back surface of the laminated form has a laminated form of resin layer / colorant layer / resin layer. It is preferable. In this case, the two resin layers on both sides of the colorant layer may be resin layers having the same composition or may be resin layers having different compositions.

  The film for semiconductor back surface 2 can be appropriately mixed with other additives as necessary. Other additives include, for example, other fillers (excluding thermally conductive fillers), flame retardants, silane coupling agents, ion trapping agents, extenders, anti-aging agents, antioxidants, and surface active agents. Agents and the like.

  The other filler may be either an inorganic filler or an organic filler, but is preferably an inorganic filler. By blending a filler such as an inorganic filler, it is possible to impart conductivity to the film for semiconductor back surface, improve thermal conductivity, adjust the elastic modulus, and the like. The film for semiconductor back surface 2 may be conductive or non-conductive. Examples of the inorganic filler include ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, and beryllium oxide, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, solder, and the like. Examples include various inorganic powders made of metal, alloys, and other carbon. A filler can be used individually or in combination of 2 or more types. Among them, silica, particularly fused silica is suitable as the filler. In addition, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.1 micrometer-80 micrometers. The average particle size of the inorganic filler is a value obtained by measurement with a laser diffraction particle size distribution measuring device.

  The blending amount of the filler (particularly inorganic filler) is preferably 80 parts by weight or less (0 part by weight to 80 parts by weight), particularly 0 part by weight to 70 parts by weight with respect to 100 parts by weight of the organic resin component. Is preferred.

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. A flame retardant can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. A silane coupling agent can be used individually or in combination of 2 or more types. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. An ion trap agent can be used individually or in combination of 2 or more types.

  The film for semiconductor back surface 2 is a resin composition obtained by mixing, for example, a thermosetting resin such as an epoxy resin, a thermoplastic resin such as an acrylic resin as necessary, and a solvent or other additives as necessary. It can be formed using conventional methods of preparing the product and forming it into a film-like layer. Specifically, for example, the resin composition is applied onto the pressure-sensitive adhesive layer 32 of the dicing tape, or the resin composition is applied onto an appropriate separator (such as release paper) to form a resin layer (or adhesive). A film-like layer (adhesive layer) as a film for a semiconductor back surface can be formed by a method of forming a layer) and transferring (transferring) the layer onto the pressure-sensitive adhesive layer 32. The resin composition may be a solution or a dispersion.

  In addition, when the film 2 for semiconductor back surfaces is formed with the resin composition containing thermosetting resins, such as an epoxy resin, the film for semiconductor back surfaces is a thermosetting resin in the step before applying to a semiconductor wafer. It is an uncured or partially cured state. In this case, after being applied to the semiconductor wafer (specifically, usually when the sealing material is cured in the flip chip bonding process), the thermosetting resin in the film for semiconductor back surface is completely or almost completely cured. .

Thus, even if the film for semiconductor back surface contains a thermosetting resin, since the thermosetting resin is in an uncured or partially cured state, the gel fraction of the film for semiconductor back surface is particularly limited. For example, it can be appropriately selected from the range of 50% by weight or less (0% by weight to 50% by weight), preferably 30% by weight or less (0% by weight to 30% by weight), particularly 10% by weight. The following (0 to 10% by weight) is preferable. The measuring method of the gel fraction of the film for semiconductor back surface can be measured by the following measuring method.
<Method for measuring gel fraction>
About 0.1 g from the film for semiconductor back surface is sampled and weighed accurately (weight of the sample). After wrapping the sample in a mesh-like sheet, it is immersed in about 50 ml of toluene at room temperature for 1 week. Thereafter, the solvent-insoluble matter (the contents of the mesh sheet) is taken out from toluene and dried at 130 ° C. for about 2 hours. The solvent-insoluble matter after drying is weighed (weight after immersion / drying), and the following formula (a) From this, the gel fraction (% by weight) is calculated.
Gel fraction (% by weight) = [(weight after immersion / drying) / (weight of sample)] × 100 (a)

  In addition, the gel fraction of the film for semiconductor back surfaces can be controlled by the heating temperature, the heating time, etc., in addition to the type and content of the resin component, the type and content of the crosslinking agent.

  In the present invention, when the film for semiconductor back surface is a film-like product formed of a resin composition containing a thermosetting resin such as an epoxy resin, it can effectively exhibit adhesion to a semiconductor wafer.

  In addition, since the cutting water is used in the dicing process of the semiconductor wafer, the film for the back surface of the semiconductor may absorb moisture, resulting in a moisture content higher than that in the normal state. When flip-chip bonding is performed with such a high water content, water vapor may accumulate at the bonding interface between the semiconductor back film 2 and the semiconductor wafer or its processed body (semiconductor), and floating may occur. Therefore, as a film for semiconductor back surface, by providing a core material with high moisture permeability on both sides, water vapor diffuses and this problem can be avoided. From such a viewpoint, a multilayer structure in which a film for semiconductor back surface is formed on one or both surfaces of the core material may be used as the film for semiconductor back surface. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.

  Although the thickness (total thickness in the case of a laminated film) of the film 2 for semiconductor back surface is not specifically limited, For example, it can select suitably from the range of about 2 micrometers-200 micrometers. Further, the thickness is preferably about 3 μm to 160 μm, more preferably about 4 μm to 100 μm, and particularly preferably about 5 μm to 80 μm.

  The tensile storage elastic modulus at 23 ° C. in the uncured state of the film 2 for semiconductor back surface is preferably 1 GPa or more (for example, 1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly preferably 3 GPa or more. Is preferred. When the tensile storage elastic modulus is 1 GPa or more, the semiconductor chip is peeled from the adhesive layer 32 of the dicing tape together with the semiconductor back surface film 2, and then the semiconductor back surface film 2 is placed on the support, When transporting or the like, it is possible to effectively suppress or prevent the semiconductor back film from sticking to the support. In addition, the said support body says the top tape in a carrier tape, a bottom tape, etc., for example. When the semiconductor back film 2 is formed of a resin composition containing a thermosetting resin, as described above, the thermosetting resin is usually in an uncured or partially cured state. The elastic modulus at 23 ° C. of the film for use is usually the elastic modulus at 23 ° C. when the thermosetting resin is uncured or partially cured.

  Here, the film for semiconductor back surface 2 may be a single layer or a laminated film in which a plurality of layers are laminated. In the case of a laminated film, the tensile storage modulus at 23 ° C. in the uncured state is a laminated film. It may be in the range of 1 GPa or more (for example, 1 GPa to 50 GPa) as a whole. In addition, the tensile storage modulus (23 ° C.) of the film for semiconductor back surface in the uncured state is the type of resin component (thermoplastic resin, thermosetting resin) and the content thereof, the type of filler such as silica filler, It can be controlled by its content. When the semiconductor back film 2 is a laminated film in which a plurality of layers are laminated (when the semiconductor back film has a laminated form), the laminated form may be, for example, a wafer adhesive layer and a laser. A laminated form composed of a mark layer can be exemplified. In addition, between such a wafer adhesive layer and a laser mark layer, other layers (intermediate layer, light blocking layer, reinforcing layer, colored layer, substrate layer, electromagnetic wave blocking layer, heat conducting layer, adhesive layer, etc.) ) May be provided. The wafer adhesive layer is a layer that exhibits excellent adhesion (adhesiveness) to the wafer, and is a layer that contacts the back surface of the wafer. On the other hand, the laser mark layer is a layer that exhibits excellent laser marking properties, and is a layer that is used when laser marking is performed on the back surface of a semiconductor chip.

  The tensile storage elastic modulus is not laminated on the dicing tape 3, but an uncured semiconductor back film 2 is prepared and a dynamic viscoelasticity measuring device “Solid Analyzer RS A2” manufactured by Rheometric is used. In the tension mode, the sample width: 10 mm, the sample length: 22.5 mm, the sample thickness: 0.2 mm, the frequency: 1 Hz, the heating rate: 10 ° C./min, a predetermined temperature under a nitrogen atmosphere ( 23 ° C.) and the obtained tensile storage modulus was obtained.

  It is preferable that at least one surface of the film 2 for semiconductor back surface is protected by a separator (release liner) (not shown). For example, in the case of the film 1 for semiconductor back surface integrated with a dicing tape, a separator may be provided only on one surface of the film for semiconductor back surface, while in the case of a film for semiconductor back surface that is not integrated with the dicing tape, A separator may be provided on one or both sides of the film for semiconductor back surface. The separator has a function as a protective material for protecting the film for semiconductor back surface until it is practically used. In the case of the dicing tape-integrated film for semiconductor back surface 1, the separator can be further used as a support base material when the semiconductor back surface film 2 is transferred to the adhesive layer 32 on the base material of the dicing tape. The separator is peeled off when the semiconductor wafer is stuck on the film for semiconductor back surface. As the separator, it is also possible to use polyethylene, polypropylene, plastic films (polyethylene terephthalate, etc.), paper or the like whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent. The separator can be formed by a conventionally known method. Further, the thickness of the separator is not particularly limited.

  When the semiconductor back surface film 2 is not laminated on the dicing tape 3, the semiconductor back surface film 2 is wound in a roll using one separator having a release layer on both sides, and the release layer is provided on both sides. It may be protected by the separator which has, and may be protected by the separator which has a peeling layer in at least one surface.

  Further, the light transmittance (visible light transmittance) of visible light (wavelength: 400 nm to 800 nm) in the film 2 for semiconductor back surface is not particularly limited, but is, for example, in the range of 20% or less (0% to 20%). It is preferably 10% or less (0% to 10%), particularly preferably 5% or less (0% to 5%). If the visible light transmittance of the film 2 for semiconductor back surface is larger than 20%, the semiconductor element may be adversely affected by the passage of light. The visible light transmittance (%) depends on the type and content of the resin component of the film 2 for semiconductor back surface, the type and content of colorant (pigment, dye, etc.), the content of inorganic filler, etc. Can be controlled.

  The visible light transmittance (%) of the film 2 for semiconductor back surface can be measured as follows. That is, a single film for semiconductor back surface 2 having a thickness (average thickness) of 20 μm is produced. Next, the film 2 for semiconductor back surface was irradiated with a visible light having a wavelength of 400 nm to 800 nm [apparatus: visible light generator manufactured by Shimadzu Corporation (trade name “ABSORPTION SPECTRO PHOTOMETER”)] with a predetermined intensity and transmitted. Measure the intensity of visible light. Furthermore, the value of visible light transmittance can be determined from the intensity change before and after the visible light passes through the semiconductor back film 2. In addition, the visible light transmittance (%; wavelength: 20 μm) of the film 2 for semiconductor back surface is determined by the value of the visible light transmittance (%; wavelength: 400 nm to 800 nm) of the film 2 for semiconductor back surface that is not 20 μm thick. 400 nm to 800 nm) can also be derived. Further, in the present invention, the visible light transmittance (%) in the case of the film for semiconductor back surface 2 having a thickness of 20 μm is obtained, but the film for semiconductor back surface according to the present invention is limited to a film having a thickness of 20 μm. is not.

  Moreover, as the film 2 for semiconductor back surfaces, the one where the moisture absorption rate is lower is preferable. Specifically, the moisture absorption rate is preferably 1% by weight or less, more preferably 0.8% by weight or less. By making the moisture absorption rate 1% by weight or less, the laser marking property can be improved. Further, for example, in the reflow process, generation of voids between the film 2 for semiconductor back surface and the semiconductor element can be suppressed or prevented. In addition, the said moisture absorption is the value computed by the weight change before and behind leaving the film 2 for semiconductor back surfaces in the atmosphere of temperature 85 degreeC and relative humidity 85% RH for 168 hours. When the film for semiconductor back surface 2 is formed of a resin composition containing a thermosetting resin, the moisture absorption rate is under an atmosphere of a temperature of 85 ° C. and a relative humidity of 85% RH with respect to the film for semiconductor back surface after thermosetting. Means the value when left for 168 hours. Moreover, the said moisture absorption rate can be adjusted by changing the addition amount of an inorganic filler, for example.

  Moreover, as the film 2 for semiconductor back surfaces, it is preferable that the ratio of volatile components is small. Specifically, the weight reduction rate (weight reduction ratio) of the film 2 for semiconductor back surface after the heat treatment is preferably 1% by weight or less, and more preferably 0.8% by weight or less. The conditions for the heat treatment are, for example, a heating temperature of 250 ° C. and a heating time of 1 hour. By making the weight reduction rate 1% by weight or less, the laser marking property can be improved. For example, in the reflow process, it is possible to suppress or prevent the occurrence of cracks in the flip chip type semiconductor device. The weight reduction rate can be adjusted, for example, by adding an inorganic substance that can reduce the generation of cracks during lead-free solder reflow. In addition, when the film 2 for semiconductor back surfaces is formed with the resin composition containing a thermosetting resin, the said weight reduction rate is the heating temperature 250 degreeC with respect to the film for semiconductor back surfaces after thermosetting, heating time 1 hour. Means the value when heated under the conditions of

(Dicing tape)
The dicing tape 3 is configured by forming an adhesive layer 32 on a base material 31. Thus, the dicing tape 3 should just have the structure by which the base material 31 and the adhesive layer 32 were laminated | stacked. The substrate (support substrate) can be used as a support matrix such as an adhesive layer. The substrate 31 preferably has a radiation transparency. Examples of the substrate 31 include paper-based substrates such as paper; fiber-based substrates such as cloth, nonwoven fabric, felt, and net; metal-based substrates such as metal foils and metal plates; plastic films and sheets Plastic base materials; Rubber base materials such as rubber sheets; Foams such as foam sheets, and laminates thereof [particularly, laminates of plastic base materials and other base materials, and plastic films (or sheets) An appropriate thin leaf body such as a laminated body of each other] can be used. In the present invention, a plastic substrate such as a plastic film or sheet can be suitably used as the substrate. Examples of the material in such a plastic material include, for example, olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer such as ethylene copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins.

  Moreover, as a material of the base material 31, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet imparted with heat shrinkability by stretching or the like, the adhesive area between the pressure-sensitive adhesive layer 32 and the semiconductor back surface film 2 is reduced by thermally shrinking the base material 31 after dicing, The collection can be facilitated.

  The surface of the base material 31 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 31, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. The base material 31 is provided with a deposited layer of a conductive material having a thickness of about 30 to 500 mm made of a metal, an alloy, an oxide thereof, or the like on the base material 31 in order to impart an antistatic ability. be able to. The base material 31 may be a single layer or a multilayer of two or more types.

  The thickness (total thickness in the case of a laminate) of the substrate 31 is not particularly limited and can be appropriately selected according to strength, flexibility, purpose of use, and the like. 1000 μm), preferably 10 μm to 500 μm, more preferably 20 μm to 300 μm, particularly about 30 μm to 200 μm, but is not limited thereto.

  The base material 31 includes various additives (coloring agent, filler, plasticizer, anti-aging agent, antioxidant, surfactant, flame retardant, etc.) as long as the effects of the present invention are not impaired. It may be.

  The adhesive layer 32 is formed of an adhesive and has adhesiveness. Such an adhesive is not particularly limited, and can be appropriately selected from known adhesives. Specifically, examples of the adhesive include acrylic adhesive, rubber adhesive, vinyl alkyl ether adhesive, silicone adhesive, polyester adhesive, polyamide adhesive, urethane adhesive, fluorine Type adhesives, styrene-diene block copolymer adhesives, and known adhesives such as a creep property-improving adhesive in which a hot-melt resin having a melting point of about 200 ° C. or less is blended with these adhesives (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, etc.) It can be selected and used. Moreover, as a pressure sensitive adhesive, a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) or a thermally expandable pressure sensitive adhesive can be used. An adhesive can be used individually or in combination of 2 or more types.

  As the pressure-sensitive adhesive, acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives can be suitably used, and acrylic pressure-sensitive adhesives are particularly preferable. As an acrylic adhesive, an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or more (meth) acrylic acid alkyl esters as monomer components. Agents.

  Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic. Butyl acid, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, ( Octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate, (meta Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, (meth) acrylic Examples include (meth) acrylic acid alkyl esters such as acid eicosyl. The (meth) acrylic acid alkyl ester is preferably a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group. In addition, the alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.

  In addition, the said acrylic polymer is another monomer component (for example) copolymerizable with the said (meth) acrylic-acid alkylester as needed for the purpose of modification | reformation, such as cohesion force, heat resistance, and crosslinkability. A unit corresponding to the copolymerizable monomer component) may be included. Examples of such copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyl such as carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Group-containing monomer; Acid anhydride group-containing monomer such as maleic anhydride, itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid, Sulfonic acid group-containing monomers such as rylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid; Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) (N-substituted) amide monomers such as acrylamide; (meth) acrylic acid such as aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, and t-butylaminoethyl (meth) acrylate A Noalkyl monomers; (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; glycidyl (meth) acrylate and the like Epoxy group-containing acrylic monomers; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imida Nitrogen-containing monomers such as benzene, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, N-vinyl caprolactam; maleimides such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide Monomers: Itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide N- (meth) acryloyloxymethylene succinimide, N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylenesk Succinimide monomers such as N-imide; glycol-based acrylic ester monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol; ) Acrylic acid ester monomer having heterocycle such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, halogen atom, silicon atom, etc .; hexanediol di (meth) acrylate, (poly) ethylene glycol Di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) a Chryrate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyldi (meth) acrylate, hexyldi (meth) And polyfunctional monomers such as acrylate. These copolymerizable monomer components can be used alone or in combination of two or more.

  When a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) is used as the pressure sensitive adhesive, examples of the radiation curable pressure sensitive adhesive (composition) include a radical reactive carbon-carbon double bond as a polymer side chain or a main chain. Intrinsic radiation curable adhesives that use polymers in the chain or at the end of the main chain as the base polymer, and radiation curable adhesives that contain UV-curable monomer or oligomer components in the adhesive It is done. Moreover, when using a heat-expandable adhesive as an adhesive, as a heat-expandable adhesive, the heat-expandable adhesive containing an adhesive and a foaming agent (especially heat-expandable microsphere) etc. are mentioned, for example.

  In the present invention, the pressure-sensitive adhesive layer 32 has various additives (for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, and an anti-aging agent as long as the effects of the present invention are not impaired. , Antioxidants, surfactants, cross-linking agents, etc.).

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent. , Metal salt crosslinking agents, carbodiimide crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, amine crosslinking agents, and the like, and isocyanate crosslinking agents and epoxy crosslinking agents are preferred. A crosslinking agent can be used individually or in combination of 2 or more types. In addition, the usage-amount of a crosslinking agent is not restrict | limited in particular.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The pressure-sensitive adhesive layer 32 is formed by using, for example, a conventional method of forming a sheet-like layer by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives. be able to. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent and other additives onto the base material 31, and applying the mixture onto an appropriate separator (such as a release paper) The pressure-sensitive adhesive layer 32 can be formed by a method in which the pressure-sensitive adhesive layer 32 is formed and transferred (transferred) onto the substrate 31.

  The thickness of the adhesive layer 32 is not particularly limited, and is, for example, about 5 μm to 300 μm (preferably 5 μm to 200 μm, more preferably 5 μm to 100 μm, particularly preferably 7 μm to 50 μm). When the thickness of the pressure-sensitive adhesive layer 32 is within the above range, an appropriate pressure-sensitive adhesive force can be exhibited. The pressure-sensitive adhesive layer 32 may be either a single layer or multiple layers.

  The adhesive force (23 ° C., peel angle 180 °, peel speed 300 mm / min) of the adhesive layer 32 of the dicing tape 3 to the flip chip type semiconductor back film 2 is in the range of 0.02 N / 20 mm to 10 N / 20 mm. A range of 0.05 N / 20 mm to 5 N / 20 mm is more preferable. By setting the adhesive force to 0.02 N / 20 mm or more, it is possible to prevent the semiconductor element from jumping when the semiconductor wafer is diced. On the other hand, by setting the adhesive force to 10 N / 20 mm or less, it is possible to prevent the semiconductor element from becoming difficult to peel or the adhesive residue from occurring when the semiconductor element is picked up.

  In the present invention, the anti-static ability can be imparted to the flip chip type semiconductor back film 2 and the dicing tape integrated semiconductor back film 1. As a result, it is possible to prevent the circuit from being broken due to the generation of static electricity during the bonding and peeling, and the resulting charging of the semiconductor wafer or the like. The antistatic ability is imparted by a method of adding an antistatic agent or a conductive substance to the base material 31, the adhesive layer 32 or the semiconductor backside film 2, a conductive layer comprising a charge transfer complex or a metal film to the base material 31. It can be performed by an appropriate method, such as a method of attaching a mark. As these methods, a method in which impurity ions that may change the quality of the semiconductor wafer are less likely to be generated is preferable. As a conductive substance (conductive filler) blended for the purpose of imparting conductivity and improving thermal conductivity, spherical, needle-like, and flaky shapes such as silver, aluminum, gold, copper, nickel, and conductive alloys Examples thereof include metal powders, metal oxides such as alumina, amorphous carbon black, and graphite. However, it is preferable that the film 2 for a semiconductor back surface is non-conductive from the viewpoint of preventing electrical leakage.

  Moreover, the film 2 for flip chip type semiconductor back surfaces and the film 1 for semiconductor back surfaces integrated with a dicing tape may be formed in a form wound in a roll shape, or formed in a form in which sheets (films) are laminated. May be. For example, when it has the form wound by roll shape, it rolls in the state which protected the laminated body of the film 2 for semiconductor back surfaces, or the film 2 for semiconductor back surfaces, and the dicing tape 3 with the separator as needed. It can be produced as a film 2 for semiconductor back surface or a film 1 for semiconductor back surface integrated with dicing tape in a state or form wound in a roll shape. In addition, as the dicing tape-integrated film for semiconductor back surface 1 in a state or form wound in a roll shape, a base material 31, an adhesive layer 32 formed on one surface of the base material 31, and the adhesive You may be comprised with the film for semiconductor back surfaces formed on the agent layer 32, and the peeling process layer (back process layer) formed in the other surface of the said base material 31. FIG.

  The thickness of the dicing tape-integrated film for semiconductor back surface 1 (the total thickness of the film for semiconductor back surface and the thickness of the dicing tape composed of the base material 31 and the adhesive layer 32) is, for example, 8 μm to 1500 μm. The range is preferably 20 μm to 850 μm (more preferably 31 μm to 500 μm, particularly preferably 47 μm to 330 μm).

  In the dicing tape-integrated film for semiconductor back surface 1, the ratio of the thickness of the film for semiconductor back surface 2 to the thickness of the adhesive layer 32 of the dicing tape 3, the thickness of the film for semiconductor back surface 2, and the thickness of the dicing tape 3 By controlling the ratio with the thickness (total thickness of the base material 31 and the adhesive layer 32), the dicing property during the dicing process, the picking property during the pick-up process, etc. can be improved, and the dicing tape integrated semiconductor The film for back surface 1 can be used effectively through a dicing process for a semiconductor wafer to a flip chip bonding process for a semiconductor chip.

(Manufacturing method of dicing tape integrated semiconductor back film)
A method for manufacturing a dicing tape-integrated film for semiconductor back surface according to the present embodiment will be described using the dicing tape-integrated film for semiconductor back surface 1 shown in FIG. 1 as an example. First, the base material 31 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, the pressure-sensitive adhesive composition is applied on the substrate 31 and dried (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 32. Examples of the coating method include roll coating, screen coating, and gravure coating. The pressure-sensitive adhesive layer composition may be applied directly to the base material 31 to form the pressure-sensitive adhesive layer 32 on the base material 31. Also, a release paper or the like that has been subjected to a release treatment on the surface of the pressure-sensitive adhesive composition. The pressure-sensitive adhesive layer 32 may be transferred to the substrate 31 after being applied to the substrate. Thereby, the dicing tape 3 in which the adhesive layer 32 is formed on the base material 31 is produced.

  On the other hand, the forming material for forming the film 2 for the semiconductor back surface is applied on the release paper so that the thickness after drying becomes a predetermined thickness, and further dried under predetermined conditions (in the case where thermosetting is necessary, If necessary, heat treatment is performed and drying is performed to form a coating layer. By transferring this coating layer onto the pressure-sensitive adhesive layer 32, the semiconductor back surface film 2 is formed on the pressure-sensitive adhesive layer 32. In addition, after apply | coating the forming material for forming the film 2 for semiconductor back surfaces directly on the said adhesive layer 32, it dries on predetermined conditions (In the case where thermosetting is required, it heat-processes as needed. The film for semiconductor back surface 2 can also be formed on the pressure-sensitive adhesive layer 32 by applying and drying. As described above, the dicing tape-integrated film for semiconductor back surface 1 according to the present invention can be obtained. In addition, when heat-curing when forming the film 2 for semiconductor back surfaces, it is important to perform heat-curing to such an extent that it will be in the state of partial hardening, However Preferably heat-curing is not performed.

  The dicing tape-integrated film for semiconductor back surface 1 of the present invention can be suitably used for manufacturing a semiconductor device having a flip chip bonding process. That is, the dicing tape-integrated film for semiconductor back surface 1 of the present invention is used when manufacturing a flip-chip mounted semiconductor device, and the film for semiconductor back surface of the dicing tape-integrated film for semiconductor back surface 1 is formed on the back surface of the semiconductor chip. A flip-chip mounted semiconductor device is manufactured in a state or form in which 2 is adhered. Therefore, the dicing tape-integrated film for semiconductor back surface 1 of the present invention is applied to a flip-chip mounted semiconductor device (a semiconductor device in a state or form in which the semiconductor chip is fixed to an adherend such as a substrate by a flip-chip bonding method). Can be used.

  The semiconductor back film 2 is a flip chip mounted semiconductor device (in a state where the semiconductor chip is fixed to an adherend such as a substrate or the like by a flip chip bonding method, similarly to the dicing tape integrated semiconductor back film 1. It can be used for the semiconductor device of the embodiment.

(Semiconductor wafer)
The semiconductor wafer is not particularly limited as long as it is a known or commonly used semiconductor wafer, and can be appropriately selected from semiconductor wafers of various materials. In the present invention, a silicon wafer can be suitably used as the semiconductor wafer.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device according to the present embodiment will be described below with reference to FIG. FIG. 2 is a schematic cross-sectional view showing a method for manufacturing a semiconductor device when the dicing tape-integrated film for semiconductor back surface 1 is used.

  The semiconductor device manufacturing method can manufacture a semiconductor device using the dicing tape-integrated film for semiconductor back surface 1. Specifically, a step of attaching a semiconductor wafer on the dicing tape-integrated film for semiconductor back surface, a step of dicing the semiconductor wafer, a step of picking up a semiconductor element obtained by dicing, and the semiconductor element And at least a flip-chip connection process on the adherend.

  In addition, in the case of the film 2 for semiconductor back surfaces, a semiconductor device can be manufactured by the method according to the manufacturing method of the semiconductor device at the time of using the film 1 for semiconductor back surfaces integrated with a dicing tape. For example, the semiconductor back surface film 2 can be used as a dicing tape-integrated film for semiconductor back surface, which is bonded to a dicing tape and integrated with the dicing tape. In this case, the manufacturing method of the semiconductor device using the film for semiconductor back surface 2 further includes the step of the method for manufacturing the film for semiconductor back surface integrated with the dicing tape, and further includes a film for semiconductor back surface and a dicing tape. And a dicing tape pressure-sensitive adhesive layer in contact with each other.

  Moreover, the film 2 for semiconductor back surface can also be stuck and used for a semiconductor wafer, without integrating with a dicing tape. In this case, the manufacturing method of the semiconductor device using the film for semiconductor back surface 2 includes a step of attaching a semiconductor wafer on the film for dicing tape integrated semiconductor back surface in the method for manufacturing the film for semiconductor back integrated dicing tape, A process of adhering a film for semiconductor back surface to a semiconductor wafer, a process of adhering a dicing tape to a film for semiconductor back surface adhered to a semiconductor wafer in a form in which the film for semiconductor back surface and the adhesive layer of the dicing tape are in contact with each other The manufacturing method is as follows.

  Moreover, the film 2 for semiconductor back surface can also be used by sticking it to the semiconductor chip which separated the semiconductor wafer. In this case, a method for manufacturing a semiconductor device using the film for semiconductor back surface 2 includes, for example, a step of sticking a dicing tape to a semiconductor wafer, a step of dicing the semiconductor wafer, and a semiconductor element obtained by dicing. The manufacturing method may include at least a step of performing a flip-chip connection of the semiconductor element on the adherend, and a step of attaching a film for semiconductor back surface to the semiconductor element.

[Mounting process]
First, as shown in FIG. 2 (a), a separator arbitrarily provided on the film 2 for semiconductor back surface of the film 1 for semiconductor back surface integrated with dicing tape is appropriately peeled off, and the film 2 for semiconductor back surface is formed. The semiconductor wafer 4 is attached, and this is adhered and held and fixed (mounting process). At this time, the film 2 for semiconductor back surface is in an uncured state (including a semi-cured state). The dicing tape-integrated film for semiconductor back surface 1 is attached to the back surface of the semiconductor wafer 4. The back surface of the semiconductor wafer 4 means a surface opposite to the circuit surface (also referred to as a non-circuit surface or a non-electrode forming surface). Although the sticking method is not specifically limited, the method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll.

[Dicing process]
Next, as shown in FIG. 2B, the semiconductor wafer 4 is diced. As a result, the semiconductor wafer 4 is cut into a predetermined size and divided into pieces (small pieces), whereby the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing tape-integrated film for semiconductor back surface 1 can be employed. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer 4 is bonded and fixed with excellent adhesion by the dicing tape-integrated semiconductor back surface film 1 having the semiconductor back surface film, chip chipping and chip jumping can be suppressed, and the semiconductor wafer 4 is damaged. Can also be suppressed. In addition, when the film 2 for semiconductor back surface is formed with the resin composition containing an epoxy resin, even if it cut | disconnects by dicing, it suppresses that the adhesive paste of the adhesive layer of the film for semiconductor back surface arises in the cut surface, or Can be prevented. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when expanding the dicing tape-integrated film for semiconductor back surface 1, the expanding can be performed using a conventionally known expanding apparatus. The expander supports a donut-shaped outer ring that can push down the dicing tape-integrated semiconductor back surface film 1 downward through the dicing ring, and a dicing tape-integrated semiconductor back surface film that is smaller in diameter than the outer ring. And an inner ring. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

[Pickup process]
In order to collect the semiconductor chip 5 adhered and fixed to the dicing tape-integrated film 1 for semiconductor back surface, the semiconductor chip 5 is picked up as shown in FIG. The film 2 is peeled off from the dicing tape 3. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor chips 5 from the substrate 31 side of the dicing tape-integrated film for semiconductor back surface 1 with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device or the like can be mentioned. Note that the back surface of the picked-up semiconductor chip 5 is protected by the film 2 for semiconductor back surface.

[Flip chip connection process]
As shown in FIG. 2D, the picked-up semiconductor chip 5 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method). Specifically, the semiconductor chip 5 is always placed on the adherend 6 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip 5 faces the adherend 6. Fix according to law. For example, the bump 51 formed on the circuit surface side of the semiconductor chip 5 is brought into contact with a bonding conductive material (solder or the like) 61 attached to the connection pad of the adherend 6 while pressing the conductive material. By melting, it is possible to secure electrical continuity between the semiconductor chip 5 and the adherend 6 and fix the semiconductor chip 5 to the adherend 6 (flip chip bonding step). At this time, a gap is formed between the semiconductor chip 5 and the adherend 6, and the air gap distance is generally about 30 μm to 300 μm. After the flip chip bonding (flip chip connection) of the semiconductor chip 5 on the adherend 6, the facing surface and the gap between the semiconductor chip 5 and the adherend 6 are cleaned, and a sealing material (sealing) is placed in the gap. It is important to seal by filling with a stop resin or the like.

  As the adherend 6, various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.

  In the flip chip bonding process, the material of the bump or the conductive material is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal. Materials, solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.

  In the flip chip bonding process, the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 5 and the conductive material on the surface of the adherend 6. The temperature is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.). The dicing tape-integrated film for semiconductor back surface of the present invention can have heat resistance that can withstand high temperatures in the flip chip bonding process by forming the film for semiconductor back surface with an epoxy resin or the like.

  In this step, it is preferable to clean the facing surface (electrode forming surface) and the gap between the semiconductor chip 5 and the adherend 6. The cleaning liquid used for the cleaning is not particularly limited, and examples thereof include an organic cleaning liquid and an aqueous cleaning liquid. The film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface of the present invention has solvent resistance to the cleaning liquid, and has substantially no solubility in these cleaning liquids. Therefore, as described above, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and cleaning can be performed by a conventional method.

  Next, a sealing step for sealing the gap between the flip-chip bonded semiconductor chip 5 and the adherend 6 is performed. The sealing step is performed using a sealing resin. Although it does not specifically limit as sealing conditions at this time, Usually, the thermosetting of the sealing resin is performed by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited thereto, For example, it can be cured at 165 ° C. to 185 ° C. for several minutes. In the heat treatment in this step, not only the sealing resin but also the thermosetting of the semiconductor back film 2 is performed at the same time. Thereby, both sealing resin and the film 2 for semiconductor back surfaces carry out hardening shrinkage with progress of thermosetting. As a result, the stress applied to the semiconductor chip 5 due to the curing shrinkage of the sealing resin can be offset or alleviated by the semiconductor back film 2 being cured and shrunk. Moreover, the film 2 for semiconductor back surfaces can be thermoset completely or almost completely by the said process, and can be stuck on the back surface of a semiconductor element with the outstanding adhesiveness. Furthermore, since the film for semiconductor back surface 2 according to the present invention can be thermally cured together with the sealing material in the sealing step even in an uncured state, the film for semiconductor back surface 2 is thermally cured. There is no need to add a new process.

  The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin may be included as a resin component. Good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

Since the semiconductor device manufactured using the dicing tape-integrated film 1 for semiconductor back surface and the film 2 for semiconductor back surface (flip chip mounting semiconductor device) has the film for semiconductor back surface attached to the back surface of the semiconductor chip. Various markings can be applied with excellent visibility. In particular, even if the marking method is a laser marking method, marking can be performed with an excellent contrast ratio, and various information (character information, graphic information, etc.) applied by laser marking can be viewed well. is there. In addition, when performing laser marking, a well-known laser marking apparatus can be utilized. As the laser, various lasers such as a gas laser, a solid laser, and a liquid laser can be used. Specifically, the gas laser is not particularly limited, and a known gas laser can be used, but a carbon dioxide laser (CO ₂ laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser). Etc.) are preferred. The solid laser is not particularly limited, and a known solid laser can be used, but a YAG laser (Nd: YAG laser or the like) and a YVO ₄ laser are preferable.

  Since the semiconductor device manufactured using the dicing tape-integrated film for semiconductor back surface and the film for semiconductor back surface of the present invention is a semiconductor device mounted by a flip chip mounting method, the semiconductor device mounted by a die bonding mounting method Instead, the shape is reduced in thickness and size. For this reason, it can use suitably as various electronic devices and electronic components, or those materials and members. Specifically, as an electronic device using the flip-chip mounted semiconductor device of the present invention, a so-called “mobile phone” or “PHS”, a small computer (for example, a so-called “PDA” (personal digital assistant)), a so-called "Notebook PC", so-called "Netbook (trademark)", so-called "wearable computer", etc.), "mobile phone" and small electronic devices integrated with a computer, so-called "digital camera (trademark)", so-called "digital" Mobile devices such as video cameras, small TVs, small game devices, small digital audio players, so-called “electronic notebooks”, so-called “electronic dictionaries”, so-called “electronic books” electronic device terminals, small digital-type watches, etc. Type electronic devices (portable electronic devices), but of course It may be an electronic device other than a mobile type (such as a setting type) (for example, a so-called “disc top PC”, a flat-screen TV, a recording / playback electronic device (hard disk recorder, DVD player, etc.), a projector, a micromachine, etc.) . Examples of materials and members of electronic components or electronic devices / electronic components include so-called “CPU” members, members of various storage devices (so-called “memory”, hard disks, etc.), and the like.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In each example, all parts are based on weight unless otherwise specified.

Example 1
Epoxy resin (trade name “HP4032D” manufactured by DIC Corporation): 100 parts, phenoxy resin (trade name “EP4250” manufactured by JER Corporation): 40 parts, phenol resin (trade name “MEH-8320” Meiwa Kasei Co., Ltd.) 129 parts, alumina filler (trade name “ALMEK30WT% -N40” manufactured by CIK Nanotech, average particle size 0.35 μm, maximum particle size 3.0 μm, thermal conductivity 40 W / mK): 1521 parts, dye (product) Name “OIL BLACK BS” manufactured by Orient Chemical Co., Ltd .: 14 parts, 1 part of a curing catalyst (trade name “2PHZ-PW” Shikoku Kasei) dissolved in methyl ethyl ketone to give a solid content concentration of 23.6% by weight A resin composition solution (sometimes referred to as “resin composition solution A”) was prepared.

  The resin composition solution A prepared as described above was applied as a release liner (separator) onto a release film made of polyethylene terephthalate film having a thickness of 50 μm and dried at 130 ° C. for 2 minutes. By doing so, a flip chip type semiconductor back film (“may be referred to as a semiconductor back film A”) having a thickness of 10 μm was produced.

(Example 2)
Epoxy resin (trade name “HP4032D” manufactured by DIC Corporation): 100 parts, phenoxy resin (trade name “EP4250” manufactured by JER Corporation): 40 parts, phenol resin (trade name “MEH-8320” Meiwa Kasei Co., Ltd.) 129 parts, alumina filler (trade name “ALMEK30WT% -N40” manufactured by CIK Nanotech, average particle size 0.35 μm, maximum particle size 3.0 μm, thermal conductivity 40 W / mK): 676 parts, dye (product) Name “OIL BLACK BS” manufactured by Orient Chemical Co., Ltd .: 14 parts, 1 part of a curing catalyst (trade name “2PHZ-PW” Shikoku Kasei) dissolved in methyl ethyl ketone to give a solid content concentration of 23.6% by weight A resin composition solution (sometimes referred to as “resin composition solution B”) was prepared.

  The resin composition solution B prepared as described above was applied as a release liner (separator) to a release film made of a polyethylene terephthalate film having a thickness of 50 μm and dried at 130 ° C. for 2 minutes. Thus, a flip chip type semiconductor back film (“may be referred to as a semiconductor back film B”) having a thickness of 10 μm was produced.

(Comparative Example 1)
Epoxy resin (trade name “HP4032D” manufactured by DIC Corporation): 100 parts, phenoxy resin (trade name “EP4250” manufactured by JER Corporation): 40 parts, phenol resin (trade name “MEH-8320” Meiwa Kasei Co., Ltd.) 129 parts, alumina filler (trade name “ALMEK30WT% -N40” manufactured by CIK Nanotech, average particle size 0.35 μm, maximum particle size 3.0 μm, thermal conductivity 40 W / mK): 294 parts, dye (product) Name “OIL BLACK BS” manufactured by Orient Chemical Co., Ltd .: 14 parts, 1 part of a curing catalyst (trade name “2PHZ-PW” Shikoku Kasei) dissolved in methyl ethyl ketone to give a solid content concentration of 23.6% by weight A resin composition solution (sometimes referred to as “resin composition solution C”) was prepared.

  The resin composition solution C prepared as described above was applied as a release liner (separator) to a release film made of a polyethylene terephthalate film having a thickness of 50 μm and dried at 130 ° C. for 2 minutes. As a result, a film for flip chip type semiconductor backside (“may be referred to as film C for semiconductor backside”) having a thickness of 10 μm was produced.

(Comparative Example 2)
Epoxy resin (trade name “HP4032D” manufactured by DIC Corporation): 100 parts, phenoxy resin (trade name “EP4250” manufactured by JER Corporation): 40 parts, phenol resin (trade name “MEH-8320” Meiwa Kasei Co., Ltd.) 129 parts, alumina filler (trade name “ALMEK30WT% -N40” manufactured by CIK Nanotech, average particle size 0.35 μm, maximum particle size 3.0 μm, thermal conductivity 40 W / mK): 234 parts, dye (product) Name “OIL BLACK BS” manufactured by Orient Chemical Co., Ltd .: 14 parts, 1 part of a curing catalyst (trade name “2PHZ-PW” Shikoku Kasei) dissolved in methyl ethyl ketone to give a solid content concentration of 23.6% by weight A resin composition solution (sometimes referred to as “resin composition solution D”) was prepared.

  The resin composition solution D prepared as described above was applied as a release liner (separator) to a release film made of a polyethylene terephthalate film having a thickness of 50 μm and dried at 130 ° C. for 2 minutes. As a result, a film for flip chip type semiconductor backside (“may be referred to as film D for semiconductor backside”) having a thickness of 10 μm was produced.

(Comparative Example 3)
Epoxy resin (trade name “HP4032D” manufactured by DIC Corporation): 100 parts, phenoxy resin (trade name “EP4250” manufactured by JER Corporation): 40 parts, phenol resin (trade name “MEH-8320” Meiwa Kasei Co., Ltd.) 129 parts, alumina filler: 527 parts, dye (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.): 14 parts, curing catalyst 1 part (trade name “2PHZ-PW” Shikoku Kasei) methyl ethyl ketone A resin composition solution (sometimes referred to as “resin composition solution E”) having a solid content concentration of 23.6% by weight was prepared.

  The resin composition solution E prepared as described above was applied as a release liner (separator) to a release treatment film made of a polyethylene terephthalate film having a thickness of 50 μm and dried at 130 ° C. for 2 minutes. As a result, a film for flip chip type semiconductor backside (“may be referred to as film E for semiconductor backside”) having a thickness of 10 μm was produced.

(Comparative Example 4)
Epoxy resin (trade name “HP4032D” manufactured by DIC Corporation): 100 parts, phenoxy resin (trade name “EP4250” manufactured by JER Corporation): 40 parts, phenol resin (trade name “MEH-8320” Meiwa Kasei Co., Ltd.) 129 parts, alumina filler: 852 parts, dye (trade name “OIL BLACK BS” manufactured by Orient Chemical Industries Co., Ltd.): 14 parts, curing catalyst 1 part (trade name “2PHZ-PW” Shikoku Kasei) methyl ethyl ketone A resin composition solution (sometimes referred to as “resin composition solution F”) having a solid content concentration of 23.6% by weight was prepared.

The resin composition solution F prepared as described above was applied as a release liner (separator) onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and dried at 130 ° C. for 2 minutes. As a result, a flip-chip type semiconductor back film (“may be referred to as a semiconductor back film F”) having a thickness of 10 μm was produced.

<Average particle size and maximum particle size of filler>
The average particle size and the maximum particle size of the filler used in each example and comparative example were measured using a laser diffraction type particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910). The results are shown in Table 1 below.

<Thermal conductivity>
The flip chip type semiconductor back film produced in each example and comparative example was heat-treated in a dryer at 175 ° C. for 1 hour to be thermally cured. Thereafter, the thermal diffusivity α (m ² / s) of each die bond film was measured by a TWA method (temperature wave thermal analysis method, measuring device; Eye Phase Mobile, manufactured by Eye Phase Co., Ltd.). Next, the specific heat Cp (J / g · ° C.) of each die bond film was measured by the DSC method. Specific heat measurement was performed using DSC 6220 manufactured by SII Nano Technology Co., Ltd. under conditions of a temperature rising rate of 10 ° C./min and a temperature of 20 to 300 ° C., and based on the obtained experimental data, a JIS handbook (specific heat capacity) It was calculated by the measuring method K-7123). Furthermore, the specific gravity of each semiconductor back surface film was measured.

Based on the values of thermal diffusivity α, specific heat Cp, and specific gravity obtained by each measurement, the thermal conductivity was calculated by the following formula. The results are shown in Table 1 below.

<Surface roughness (Ra) measurement of film for semiconductor back surface>
The surface roughness (Ra) of the exposed surface side (surface opposite to the release liner) of the films A to F for the semiconductor back surface is determined based on JIS B 0601, a non-contact three-dimensional roughness measuring device (NT3300 manufactured by Veeco). ). The measurement conditions were 50 times, and the measurement values were obtained by applying a median filter to the measurement data. The measurement was performed five times for each flip-chip type semiconductor back film while changing the measurement location, and the average value was defined as the surface roughness (Ra).

<Adhesive evaluation of semiconductor back film to semiconductor wafer>
The adhesiveness (peeling force) of the film for semiconductor back surface to the semiconductor wafer is determined by placing a silicon wafer as a semiconductor wafer on a hot plate and pressing the adhesive tape (trade name “BT315” Nitto Denko under a predetermined temperature (50 ° C.). A film for semiconductor back surface having a length of 150 mm and a width of 10 mm, which has been reinforced by the backside of the product, is pasted together by a 2 kg roller. Then, after leaving still on a hot plate (50 degreeC) for 2 minutes, leaving still at normal temperature (about 23 degreeC) for 20 minutes, and leaving, a peeling tester (brand name "Autograph AGS-J" Shimadzu Corporation make) ) Is peeled off at a temperature of 23 ° C. under conditions of a peeling angle of 180 ° and a tensile speed of 300 mm / min (the backside semiconductor film and the semiconductor wafer). Measure the maximum load (the maximum value of the load excluding the peak top at the beginning of measurement) at the time of peeling, and bond this maximum load between the film for semiconductor backside and the semiconductor wafer. The peel strength (N / 10 mm width) of the film for semiconductor back surface is determined as the property (adhesion of the film for semiconductor back surface to the semiconductor wafer).

<Evaluation of laser marking properties of film for semiconductor backside>
The surface of the film for semiconductor back surface in the sample in which the film for semiconductor back surface obtained by the above <Evaluation of adhesion of film for semiconductor back surface to semiconductor wafer> is bonded to the semiconductor wafer is subjected to laser marking by YAG laser, and the laser About the information (barcode information) obtained by marking, the laser marking property of the film for semiconductor back surface according to each example or each comparative example was evaluated according to the following evaluation criteria.

(Evaluation criteria for laser marking)
+: Among 10 randomly selected adults, 8 or more people judged that the information obtained by laser marking could be viewed well.-: Obtained by laser marking among 10 randomly selected adults. The number of people who judged that the received information can be viewed well is 7 or less

(result)
As can be seen from Table 1, as in Examples 1 and 2, the content of the heat conductive filler is 50% by volume or more, and the average particle size and the maximum particle size of the heat conductive filler are the films for the semiconductor back surface, respectively. When the thickness was 30% or less and 80% or less, the surface roughness of the film for semiconductor back surface was suppressed to a low value, and good thermal conductivity was obtained. In addition, the adhesion of the film for semiconductor back surface to the semiconductor wafer and the laser marking property were also good. On the other hand, as in Comparative Examples 1 and 2, when the content of the heat conductive filler was less than 50% by volume, the heat conductivity was lowered. When the average particle size and the maximum particle size of the thermally conductive filler exceed 30% and 80% of the thickness of the film for semiconductor back surface, respectively, the surface roughness becomes large although the thermal conductivity is good, As a result, the adhesion of the film to the semiconductor wafer and the laser marking property were inferior.

DESCRIPTION OF SYMBOLS 1 Dicing tape integrated type film for semiconductor back surfaces 2 Film for semiconductor back surfaces 3 Dicing tape 31 Base material 32 Adhesive layer 33 The part corresponding to the sticking part of a semiconductor wafer 4 Semiconductor wafer 5 Semiconductor chip 51 On the circuit surface side of the semiconductor chip 5 Bumps formed 6 Adhered body 61 Conductive material for bonding deposited on connection pads of the adherend 6

Claims (4)

The film for flip chip type semiconductor back surface disposed on the back surface of the semiconductor element flip chip connected on the adherend is a film for semiconductor back surface integrated with a dicing tape laminated on a dicing tape,
The dicing tape has a structure in which an adhesive layer is laminated on a substrate,
The flip chip type semiconductor back film is laminated on the adhesive layer of the dicing tape,
The flip chip type semiconductor back film includes an acrylic resin and a heat conductive filler,
The content of the thermally conductive filler is 50% by volume or more,
The dicing tape-integrated semiconductor back surface, wherein the average particle size of the thermal conductive filler is a value of 30% or less and the maximum particle size is a value of 80% or less with respect to the thickness of the film the film. A method for manufacturing a semiconductor device using the dicing tape-integrated film for semiconductor back surface according to claim 1,
Attaching a semiconductor wafer on a flip chip type semiconductor back film in the dicing tape integrated semiconductor back film;
Forming a semiconductor element by dicing the semiconductor wafer;
The step of peeling the semiconductor element from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film,
And a step of flip-chip connecting the semiconductor element onto the adherend. The film for flip chip type semiconductor back surface disposed on the back surface of the semiconductor element flip chip connected on the adherend is a film for semiconductor back surface integrated with a dicing tape laminated on a dicing tape,
The dicing tape has a structure in which an adhesive layer is laminated on a substrate,
The flip chip type semiconductor back film is laminated on the adhesive layer of the dicing tape,
The flip chip type semiconductor back film includes a resin and a thermally conductive filler,
The content of the thermally conductive filler is 50% by volume or more,
The dicing tape-integrated semiconductor back surface, wherein the average particle size of the thermal conductive filler is a value of 30% or less and the maximum particle size is a value of 80% or less with respect to the thickness of the film the film. A method for manufacturing a semiconductor device using the dicing tape-integrated film for semiconductor back surface according to claim 3,
Attaching a semiconductor wafer on a flip chip type semiconductor back film in the dicing tape integrated semiconductor back film;
Forming a semiconductor element by dicing the semiconductor wafer;
The step of peeling the semiconductor element from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film,
And a step of flip-chip connecting the semiconductor element onto the adherend.

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