JP5636471B2 - Flip chip type film for semiconductor back surface and use thereof - Google Patents

Description

  The present invention relates to a flip chip type semiconductor back film and a dicing tape integrated semiconductor back film using the same. The flip chip type semiconductor back film is used for protecting the back surface of a semiconductor element such as a semiconductor chip and improving the strength. The present invention also relates to a method for manufacturing a semiconductor device using a dicing tape-integrated film for semiconductor back surface.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. Therefore, a flip chip type semiconductor device in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connection) is widely used as a semiconductor device and its package. The flip chip connection is fixed in such a manner that the circuit surface of the semiconductor chip faces the electrode forming surface of the substrate. In such a semiconductor device or the like, there are cases where the back surface of the semiconductor chip is protected by a film for back surface to prevent the semiconductor chip from being damaged (see Patent Document 1). In addition, laser marking may be applied to the back film to improve product identification (see Patent Document 2).

JP 2007-158026 A JP 2008-166451 A

  As a typical procedure of flip chip connection, a solder bump or the like formed on the surface of a semiconductor chip to which a film for back surface is bonded is immersed in a flux, and then an electrode formed on the bump and the substrate (this electrode as necessary) And solder bumps are also formed on the top, and finally the solder bumps are melted to reflow-connect the solder bumps and the electrodes. Flux is used for the purpose of cleaning solder bumps during soldering, preventing oxidation, improving solder wettability, and the like. With the above procedure, a good electrical connection between the semiconductor chip and the substrate can be established.

  Here, the flux is usually attached only to the bump portion, but depending on the work environment, the flux may adhere to the back film attached to the back surface of the semiconductor chip. And if reflow connection is performed with the flux attached to the back film, a stain derived from the flux will occur on the back film surface, which may reduce the appearance and laser marking properties.

  SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a flip chip type semiconductor back surface capable of preventing the occurrence of spots even when flux is attached and capable of manufacturing a semiconductor device having excellent appearance. A film, a dicing tape-integrated film for semiconductor back surface using the film, and a method for manufacturing a semiconductor device are provided.

  The inventors of the present application have studied to solve the conventional problems, and as a result, by adopting the following configuration, it is possible to prevent the occurrence of spots due to flux, and a flip chip capable of manufacturing a semiconductor device with good appearance The present inventors have found that a film for a type semiconductor back surface can be provided, and have completed the present invention.

  That is, the flip chip type semiconductor back film (hereinafter sometimes referred to as “semiconductor back film”) according to the present invention is a flip disposed on the back surface of a semiconductor element that is flip-chip connected to an adherend. A film for chip-type semiconductor back surface, comprising an adhesive layer and a protective layer laminated on the adhesive layer, wherein the protective layer is a heat-resistant resin or metal having a glass transition temperature of 200 ° C. or higher. It is configured.

  In the film for semiconductor back surface, since a layer composed of a heat-resistant resin or metal having a glass transition temperature of 200 ° C. or more is formed as a protective layer, the flux component is protected during reflow for flip chip bonding. It will eventually evaporate without entering the layer. As a result, it is possible to prevent the generation of spots derived from the flux in the film for semiconductor back surface. The reason for the suppression of such stains is not clear, but is presumed as follows. When the flux adheres to the back film without the protective layer, the molecular structure of the resin that composes the back film is greatly loosened at the reflow temperature, and the flux component easily enters the back film. Both become partially compatible and the flux component remains, resulting in spots. On the other hand, the film for semiconductor back surface of the present invention is provided with a protective layer composed of a heat-resistant resin or metal having a glass transition temperature of 200 ° C. or higher, so that the microstructure in the protective layer can be obtained even at the temperature during reflow. Relaxation of (molecular structure or atomic structure) is suppressed or does not substantially relax. Thereby, the penetration | invasion of the flux component to a protective layer is suppressed. The flux remaining on the surface of the film for semiconductor back surface evaporates due to heating during reflow, and as a result, the generation of spots derived from the flux is prevented.

  It is preferable that the heat resistant resin is at least one selected from the group consisting of polyimide, polyphenylene sulfide, polysulfone, polyetherimide, polyether ketone, and polyether ether ketone. These resins are easily available and have a rigid molecular structure and a very high glass transition temperature, so that it is possible to efficiently prevent the occurrence of flux-derived spots. Among these, polyimide is preferable as the heat-resistant resin.

  The metal is preferably at least one selected from the group consisting of aluminum, alumite, stainless steel, iron, titanium, tin and copper. These metals can exhibit not only the effect of preventing the occurrence of spots derived from the flux, but also excellent laser marking properties.

  When the surface activation treatment is performed on the surface of the protective layer on the adhesive layer side, the adhesive force between the protective layer and the adhesive layer can be improved. Even when used as a subsequent product, peeling of the two can be prevented, and a highly reliable semiconductor device can be manufactured.

  The surface activation treatment is preferably at least one treatment selected from the group consisting of plasma treatment, ozone water treatment, ultraviolet ozone treatment, and ion beam treatment. By these treatments, surface activation can be efficiently performed regardless of whether the protective layer is composed of a heat resistant resin or a metal.

  The dicing tape-integrated film for semiconductor back surface of the present invention includes a dicing tape in which an adhesive layer is laminated on a base material, and the flip-chip type semiconductor laminated on the adhesive layer with the protective layer side facing And a back film.

  In the dicing tape-integrated film for semiconductor back surface having the above-described configuration, the dicing tape and the flip chip type film for semiconductor back surface are integrally formed. Therefore, a dicing process for dicing a semiconductor wafer to produce a semiconductor element and subsequent pickup It can also be used for the process. That is, when the dicing tape is attached to the back surface of the semiconductor wafer before the dicing step, the film for semiconductor back surface can also be attached, so the step of attaching only the film for semiconductor back surface (film attachment for semiconductor back surface) No wearing process is required. As a result, the number of processes can be reduced. Moreover, since the semiconductor back film with the protective layer protects the back surface of the semiconductor element formed by the semiconductor wafer or dicing, damage of the semiconductor element is reduced in the dicing process and subsequent processes (pickup process, etc.) In addition to being able to prevent the occurrence of spots due to the flux during flip chip bonding, a semiconductor device having excellent appearance can be manufactured.

  The method for manufacturing a semiconductor device of the present invention includes a step of adhering a semiconductor wafer on a flip chip type semiconductor back film in the dicing tape integrated semiconductor back film, and dicing the semiconductor wafer to form a semiconductor element. A step of peeling the semiconductor element from the adhesive layer of the dicing tape together with the film for flip chip type semiconductor backside, a step of attaching a flux to a connecting member to the adherend in the semiconductor element, And flip chip connecting the semiconductor element onto the adherend.

  In the manufacturing method, since the film for flip chip type semiconductor back surface on which the protective layer is formed is used, in the flip chip bonding step, it is possible to prevent the occurrence of spots from the flux in the film for semiconductor back surface, and the appearance It is possible to efficiently manufacture a semiconductor device having excellent properties.

It is a cross-sectional schematic diagram which shows an example of the film for dicing tape integrated semiconductor back surfaces of this invention. It is a cross-sectional schematic diagram which shows an example of the film for flip chip type semiconductor back surfaces of this invention. It is a cross-sectional schematic diagram which shows an example of the manufacturing method of the semiconductor device using the film for dicing tape integrated semiconductor back surfaces of this invention.

  Although one embodiment of the present invention will be described with reference to the drawings, the present invention is not limited to these examples. Note that in this specification, parts unnecessary for description are omitted in the drawings, and there are parts illustrated in an enlarged or reduced manner for ease of description.

(Dicing tape integrated film for semiconductor backside)
FIG. 1 is a schematic cross-sectional view showing an example of a dicing tape-integrated film for semiconductor back surface according to the present embodiment. As shown in FIG. 1, the dicing tape-integrated film for semiconductor back surface 1 includes a dicing tape 3 in which a pressure-sensitive adhesive layer 32 is provided on a base material 31, and a flip-chip type semiconductor provided on the pressure-sensitive adhesive layer. It is the structure provided with the film 2 for back surfaces. As will be described later, the film for semiconductor back surface 2 includes an adhesive layer and a protective layer laminated on the adhesive layer.

  Further, in the dicing tape-integrated film for semiconductor back surface of the present invention, as shown in FIG. 1, on the adhesive layer 32 of the dicing tape 3, the semiconductor is provided only on the portion 33 corresponding to the bonded portion of the semiconductor wafer. Although the structure in which the film 2 for back surfaces was formed may be sufficient, the structure in which the film for semiconductor back surfaces was formed in the whole surface of the adhesive layer 32 may be sufficient, and it is larger than the part 33 corresponding to the sticking part of a semiconductor wafer. And the structure by which the film for semiconductor back surfaces was formed in the part smaller than the whole surface of the adhesive layer 32 may be sufficient. In addition, the surface (surface of the side stuck on the back surface of a wafer) of the film 2 for semiconductor back surfaces may be protected by the separator etc. until it is stuck on the wafer back surface. Hereinafter, the flip chip type semiconductor back film and the dicing tape will be described in detail in this order.

(Flip chip type film for semiconductor backside)
FIG. 2 is a schematic cross-sectional view showing an example of the flip-chip type semiconductor back film of the present invention. The film for semiconductor back surface 2 has a film-like form, and includes an adhesive layer 21 and a protective layer 22 laminated on the adhesive layer 21. The adhesive layer 21 is normally in an uncured state (including a semi-cured state) in the form of a dicing tape integrated semiconductor back film as a product, and the dicing tape integrated semiconductor back film is adhered to a semiconductor wafer. After being cured.

  The light transmittance (visible light transmittance) of visible light (wavelength: 400 nm to 800 nm) in the film 2 for semiconductor back surface is not particularly limited, but may be, for example, in the range of 20% or less (0% to 20%). It is preferably 10% or less (0% to 10%), more preferably 5% or less (0% to 5%). If the visible light transmittance of the film 2 for semiconductor back surface is larger than 20%, the semiconductor element may be adversely affected by the passage of light. The visible light transmittance (%) depends on the type and content of the resin component of the film 2 for semiconductor back surface, the type and content of colorant (pigment, dye, etc.), the content of inorganic filler, etc. Can be controlled.

  The visible light transmittance (%) of the film 2 for semiconductor back surface can be measured as follows. That is, a single film for semiconductor back surface 2 having a thickness (average thickness) of 20 μm is produced. Next, the film 2 for semiconductor back surface was irradiated with a visible light having a wavelength of 400 nm to 800 nm [apparatus: visible light generator manufactured by Shimadzu Corporation (trade name “ABSORPTION SPECTRO PHOTOMETER”)] with a predetermined intensity and transmitted. Measure the intensity of visible light. Furthermore, the value of visible light transmittance can be determined from the intensity change before and after the visible light passes through the semiconductor back film 2. In addition, the visible light transmittance (%; wavelength: 20 μm) of the film 2 for semiconductor back surface is determined by the value of the visible light transmittance (%; wavelength: 400 nm to 800 nm) of the film 2 for semiconductor back surface that is not 20 μm thick. 400 nm to 800 nm) can also be derived. Further, in the present invention, the visible light transmittance (%) in the case of the film for semiconductor back surface 2 having a thickness of 20 μm is obtained, but the film for semiconductor back surface according to the present invention is limited to a film having a thickness of 20 μm. is not.

(Adhesive layer)
The adhesive layer 21 is preferably formed of at least a thermosetting resin, and more preferably formed of at least a thermosetting resin and a thermoplastic resin. Moreover, a thermosetting acceleration catalyst may be included in the resin constituting the adhesive layer 21. By forming at least with a thermosetting resin, the adhesive layer can effectively exhibit an adhesive function.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET (polyethylene terephthalate) and PBT (polybutylene terephthalate), polyamideimide resins, or fluorine Examples thereof include resins. A thermoplastic resin can be used individually or in combination of 2 or more types. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and is linear or branched having 30 or less carbon atoms (preferably 4 to 18 carbon atoms, more preferably 6 to 10 carbon atoms, and particularly preferably 8 or 9 carbon atoms). And polymers having one or more esters of acrylic acid or methacrylic acid having an alkyl group as a component. That is, in the present invention, acrylic resin has a broad meaning including methacrylic resin. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, pentyl group, isopentyl group, hexyl group, heptyl group, and 2-ethylhexyl group. Octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, dodecyl group (lauryl group), tridecyl group, tetradecyl group, stearyl group, octadecyl group and the like.

  Further, the other monomer for forming the acrylic resin (a monomer other than an alkyl ester of acrylic acid or methacrylic acid having an alkyl group with 30 or less carbon atoms) is not particularly limited. For example, acrylic acid , Methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid-containing monomer, such as maleic anhydride or itaconic anhydride, etc. ) 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (meta ) Acrylic acid 10-hydroxyde , Hydroxyl group-containing monomers such as 12-hydroxylauryl (meth) acrylic acid or (4-hydroxymethylcyclohexyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane Sulfonic acid, methacrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate or sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or phosphoric acid group content such as 2-hydroxyethyl acryloyl phosphate And monomers. In addition, (meth) acrylic acid means acrylic acid and / or methacrylic acid, and (meth) of the present invention has the same meaning.

  Examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. A thermosetting resin can be used individually or in combination of 2 or more types. As the thermosetting resin, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is particularly suitable. Moreover, a phenol resin can be used suitably as a hardening | curing agent of an epoxy resin.

  The epoxy resin is not particularly limited. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy. Bifunctional epoxy such as resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin Epoxy resin such as resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin It can be used.

  As the epoxy resin, among the above examples, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. A phenol resin can be used individually or in combination of 2 or more types. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 equivalent to 1.2 equivalent. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The content of the thermosetting resin is preferably 5% by weight or more and 90% by weight or less, more preferably 10% by weight or more and 85% by weight or less, with respect to all resin components in the adhesive layer. More preferably, it is 15 weight% or more and 80 weight% or less. By making the content 5% by weight or more, the thermosetting shrinkage can be easily made 2% by volume or more. In addition, when the sealing resin is heat-cured, the adhesive layer can be sufficiently heat-cured, and the flip-chip type semiconductor device without peeling can be manufactured by securely bonding and fixing to the back surface of the semiconductor element. become. On the other hand, when the content is 90% by weight or less, warpage of the package (PKG: flip chip type semiconductor device) can be suppressed.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  The adhesive layer 21 is preferably formed of a resin composition containing an epoxy resin and a phenol resin, or a resin composition containing an epoxy resin, a phenol resin, and an acrylic resin. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured.

  It is important that the adhesive layer 21 has adhesiveness (adhesion) to the back surface (circuit non-formed surface) of the semiconductor wafer. The adhesive layer 21 can be formed of, for example, a resin composition containing an epoxy resin as a thermosetting resin. Since the adhesive layer 21 is crosslinked to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent during production. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  The adhesive strength of the adhesive layer 21 to the semiconductor wafer (23 ° C., peeling angle 180 degrees, peeling speed 300 mm / min) is preferably in the range of 0.5 N / 20 mm to 15 N / 20 mm, and 0.7 N / 20 mm to 10 N / 20 mm. The range of is more preferable. By setting it to 0.5 N / 20 mm or more, it is stuck to a semiconductor wafer or a semiconductor element with excellent adhesion, and the occurrence of floating or the like can be prevented. In addition, it is possible to prevent the occurrence of chip jumping during dicing of the semiconductor wafer. On the other hand, by setting it to 15 N / 20 mm or less, it can be easily peeled from the dicing tape.

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent, a metal salt Examples thereof include a system crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent. As the crosslinking agent, an isocyanate crosslinking agent or an epoxy crosslinking agent is suitable. Moreover, the said crosslinking agent can be used individually or in combination of 2 or more types.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In addition, the usage-amount in particular of a crosslinking agent is not restrict | limited, According to the grade to bridge | crosslink, it can select suitably. Specifically, the amount of the crosslinking agent used is, for example, usually 7 parts by weight or less (for example, 0.05 parts by weight) with respect to 100 parts by weight of the polymer component (particularly, the polymer having a functional group at the molecular chain end). ~ 7 parts by weight). When the amount of the crosslinking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesive force is lowered, which is not preferable. From the viewpoint of improving cohesive strength, the amount of crosslinking agent used is preferably 0.05 parts by weight or more with respect to 100 parts by weight of the polymer component.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The adhesive layer 21 may be colored. When the protective layer is transparent, the colored adhesive layer can exhibit an excellent appearance through the protective layer, and a semiconductor device having an added-value appearance can be obtained. Since the colored film for semiconductor back surface can make the marking on the transparent protective layer stand out, the film for semiconductor back surface is provided on the surface of the semiconductor element or the non-circuit surface side of the semiconductor device using the semiconductor element. Accordingly, by using various marking methods such as a printing method and a laser marking method, marking can be performed and various information such as character information and graphic information can be given. In particular, by controlling the coloring color, it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility. Further, when the adhesive layer is colored, the dicing tape and the film for semiconductor back surface can be easily distinguished, and workability and the like can be improved. Further, for example, as a semiconductor device, it is possible to color-code according to products. When the film for semiconductor back surface is colored (when it is not colorless or transparent), the color exhibited by coloring is not particularly limited, but is preferably a dark color such as black, blue, red, etc., particularly black It is preferable that

In the present embodiment, the dark, ^basically, L ^* a * ^{b * L} defined by the color system ^* is 60 or less (0 to 60) [preferably 50 or less (0 to 50) More preferably, it means a dark color of 40 or less (0 to 40)].

Also, black and ^basically, L ^* a * ^{b * L} defined by the color system ^* is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a black color which is (0-25) below. In black, a ^* and b ^* defined in the L ^* a ^* b ^* color system can be appropriately selected according to the value of L ^* . As a ^* and b ^* , for example, both are preferably −10 to 10, more preferably −5 to 5, particularly in the range of −3 to 3 (among others 0 or almost 0). Is preferred.

In the present embodiment, L ^* , a ^* , and b ^* defined by the L ^* a ^* b ^* color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated | required by measuring using. The L ^* a ^* b ^* color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L ^* a ^* b ^* ) color system. It means that. The L ^* a ^* b ^* color system is defined in JIS Z 8729 in the Japanese Industrial Standard.

  When the adhesive layer 21 is colored, a color material (colorant) can be used according to the target color. As such a color material, various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable. As the color material, any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more. As the dye, any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used. Also, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.

  In particular, when a dye is used as the coloring material, the dye is uniformly or almost uniformly dispersed by dissolution in the adhesive layer 21, so that the film for semiconductor back surface (and hence dicing tape) having a uniform or almost uniform coloring concentration. Integrated film for semiconductor back surface) can be easily manufactured. Therefore, when a dye is used as the coloring material, the film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface can make the coloring density uniform or almost uniform, and can improve the marking property and appearance.

  Although it does not restrict | limit especially as a black color material, For example, it can select suitably from an inorganic black pigment and a black dye. In addition, as a black color material, a color material mixture in which a cyan color material (blue green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be. Black color materials can be used alone or in combination of two or more. Of course, the black color material can be used in combination with a color material other than black.

  Specifically, as the black color material, for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.

  In the present invention, as the black color material, C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C. I. Black dyes such as Disperse Black 1, 3, 10, and 24; I. Black pigments such as CI Pigment Black 1 and 7 can also be used.

  Examples of such a black color material include a product name “Oil Black BY”, a product name “OilBlack BS”, a product name “OilBlack HBB”, a product name “Oil Black 803”, a product name “Oil Black 860”, The product name “Oil Black 5970”, the product name “Oil Black 5906”, the product name “Oil Black 5905” (manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.

  Examples of the color material other than the black color material include a cyan color material, a magenta color material, and a yellow color material. Examples of cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.

  In the magenta color material, examples of the magenta dye include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.

  In the magenta color material, examples of the magenta pigment include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc. 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. C.I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; I. Bat red 1, 2, 10, 13, 15, 23, 29, 35 and the like.

  Examples of yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 10, 12, 13, 14, 15, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Examples thereof include yellow pigments such as Vat Yellow 1, 3 and 20.

  Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more. When two or more kinds of various color materials such as a cyan color material, a magenta color material, and a yellow color material are used, the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.

  When coloring the adhesive layer 21, the coloring form is not particularly limited. For example, the adhesive layer 21 may be a single layer film-like material to which a colorant is added. Further, it may be a laminated film in which at least a resin layer formed of a thermosetting resin and a colorant layer are laminated. When the adhesive layer 21 is a laminated film of a resin layer and a colorant layer, the adhesive layer 21 in a laminated form may have a laminated form of resin layer / colorant layer / resin layer. preferable. In this case, the two resin layers on both sides of the colorant layer may be resin layers having the same composition or may be resin layers having different compositions.

  The adhesive layer 21 can be appropriately mixed with other additives as necessary. Examples of other additives include fillers (fillers), flame retardants, silane coupling agents, ion trapping agents, bulking agents, antioxidants, antioxidants, and surfactants.

  The filler may be either an inorganic filler or an organic filler, but an inorganic filler is suitable. By blending a filler such as an inorganic filler, it is possible to impart conductivity to the adhesive layer 21, improve thermal conductivity, adjust the elastic modulus, and the like. The adhesive layer 21 may be conductive or non-conductive. Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. , Various inorganic powders made of metal such as tin, zinc, palladium, solder, or alloys, and other carbon. A filler can be used individually or in combination of 2 or more types. Among them, silica, particularly fused silica is suitable as the filler. In addition, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.1 micrometer-80 micrometers. The average particle size of the inorganic filler is a value obtained by measurement with a laser diffraction particle size distribution measuring device.

  The blending amount of the filler (particularly inorganic filler) is preferably 80 parts by weight or less (0 to 80 parts by weight), particularly 0 to 70 parts by weight with respect to 100 parts by weight of the organic resin component. It is preferable that

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. A flame retardant can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. A silane coupling agent can be used individually or in combination of 2 or more types. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. An ion trap agent can be used individually or in combination of 2 or more types.

  In addition, when the adhesive layer 21 is formed of a resin composition containing a thermosetting resin such as an epoxy resin, the adhesive layer 21 is not made of a thermosetting resin before being applied to a semiconductor wafer. It is a state of hardening or partial hardening. In this case, the thermosetting resin in the adhesive layer 21 is completely or almost completely cured after application to the semiconductor wafer (specifically, usually when the sealing material is cured in the flip chip bonding process). .

Thus, even if the adhesive layer 21 contains a thermosetting resin, since the thermosetting resin is in an uncured or partially cured state, the gel fraction of the adhesive layer 21 is particularly limited. For example, it can be appropriately selected from the range of 50% by weight or less (0% by weight to 50% by weight), preferably 30% by weight or less (0% by weight to 30% by weight), particularly 10% by weight. The following (0 to 10% by weight) is preferable. The measuring method of the gel fraction of the adhesive layer 21 can be measured by the following measuring method.
<Method for measuring gel fraction>
About 0.1 g from the adhesive layer is sampled and weighed accurately (weight of sample), and the sample is wrapped in a mesh sheet, and then immersed in about 50 ml of toluene at room temperature for 1 week. Thereafter, the solvent-insoluble matter (the contents of the mesh sheet) is taken out from toluene and dried at 130 ° C. for about 2 hours. The solvent-insoluble matter after drying is weighed (weight after immersion / drying), and the following formula (a) From this, the gel fraction (% by weight) is calculated.
Gel fraction (% by weight) = [(weight after immersion / drying) / (weight of sample)] × 100 (a)

  The gel fraction of the adhesive layer can be controlled by the heating temperature, the heating time, etc., in addition to the type and content of the resin component, the type and content of the crosslinking agent.

  In the present invention, when the adhesive layer 21 is a film-like product formed of a resin composition containing a thermosetting resin such as an epoxy resin, it can effectively exhibit adhesion to a semiconductor wafer.

  In addition, since the cutting water is used in the dicing process of the semiconductor wafer, the adhesive layer 21 may absorb moisture, resulting in a moisture content higher than that in the normal state. If flip-chip bonding is performed with such a high water content, water vapor may accumulate at the bonding interface between the adhesive layer 21 and the semiconductor wafer or its processed body (semiconductor), and floating may occur. Therefore, the adhesive layer has a structure in which a core material with high moisture permeability is provided on both sides, so that water vapor diffuses and this problem can be avoided. From this point of view, a multilayer structure in which an adhesive layer is formed on one side or both sides of the core material may be used as the adhesive layer. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.

  The thickness of the adhesive layer 21 (total thickness in the case of a laminated film) is not particularly limited, but can be appropriately selected from a range of about 2 μm to 200 μm, for example. Further, the thickness is preferably about 3 μm to 160 μm, more preferably about 4 μm to 100 μm, and particularly preferably about 5 μm to 80 μm.

  The tensile storage modulus at 23 ° C. in the uncured state of the adhesive layer 21 is preferably 1 GPa or more (for example, 1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly preferably 3 GPa or more. It is. In addition, when the adhesive layer 21 is formed of a resin composition containing a thermosetting resin, as described above, the thermosetting resin is usually in an uncured or partially cured state. The elastic modulus at 23 ° C. of the film is usually the elastic modulus at 23 ° C. when the thermosetting resin is uncured or partially cured.

  Here, the adhesive layer 21 may be a single layer or a laminated film in which a plurality of layers are laminated. In the case of a laminated film, the tensile storage elastic modulus at 23 ° C. in the uncured state is the whole laminated film. 1 GPa or more (for example, 1 GPa to 50 GPa). In addition, the tensile storage modulus (23 ° C.) of the adhesive layer in an uncured state is the type of resin component (thermoplastic resin, thermosetting resin) and its content, the type of filler such as silica filler, and the like. It can be controlled by the content. When the adhesive layer 21 is a laminated film in which a plurality of layers are laminated (when the adhesive layer has a laminated form), the laminated form is not particularly limited, and such an adhesive is used. Other layers (an intermediate layer, a light blocking layer, a reinforcing layer, a colored layer, a base material layer, an electromagnetic wave blocking layer, a heat conductive layer, an adhesive layer, etc.) may be provided between the layer and the protective layer.

  The tensile storage elastic modulus was not laminated on the dicing tape 3, but an uncured film-like adhesive layer 21 was prepared, and a dynamic viscoelasticity measuring device “Solid Analyzer RS A2” manufactured by Rheometric Co., Ltd. was used. In a tensile mode, sample width: 10 mm, sample length: 22.5 mm, sample thickness: 0.2 mm, frequency: 1 Hz, rate of temperature increase: 10 ° C./min, under a nitrogen atmosphere It was measured at a temperature (23 ° C.) and used as a value of the obtained tensile storage modulus.

  The adhesive layer 21 is preferably protected by a separator (release liner) on the surface opposite to the surface facing the protective layer 22 (not shown). The separator has a function as a protective material that protects the adhesive layer until it is practically used. In the case of the dicing tape-integrated film for semiconductor back surface 1, the separator can be further used as a support base material when the semiconductor back surface film 2 is transferred to the adhesive layer 32 on the base material of the dicing tape. The separator is peeled off when the semiconductor wafer is stuck on the film for semiconductor back surface. As the separator, it is also possible to use polyethylene, polypropylene, plastic films (polyethylene terephthalate, etc.), paper or the like whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent. The separator can be formed by a conventionally known method. Further, the thickness of the separator is not particularly limited.

  When the film 2 for semiconductor back surface is not laminated | stacked on the dicing tape 3, the adhesive bond layer 21 is a form wound by roll shape using the separator which has a peeling layer on both surfaces, and has a peeling layer on both surfaces It may be protected by a separator or may be protected by a separator having a release layer on at least one surface.

  The adhesive layer 21 preferably has a lower moisture absorption rate. Specifically, the moisture absorption rate is preferably 1% by weight or less, more preferably 0.8% by weight or less. By setting the moisture absorption rate to 1% by weight or less, it is possible to suppress or prevent generation of voids between the semiconductor back film 2 and the semiconductor element in the reflow process. The moisture absorption rate is a value calculated from a change in weight before and after the adhesive layer 21 is left for 168 hours in an atmosphere at a temperature of 85 ° C. and a relative humidity of 85% RH. When the adhesive layer 21 is formed of a resin composition containing a thermosetting resin, the moisture absorption rate is 168 in an atmosphere of a temperature of 85 ° C. and a relative humidity of 85% RH with respect to the adhesive layer after thermosetting. It means the value when left unattended. Moreover, the said moisture absorption rate can be adjusted by changing the addition amount of an inorganic filler, for example.

  Moreover, as the adhesive layer 21, it is preferable that the ratio of volatile components is small. Specifically, the weight reduction rate (ratio of weight reduction amount) of the adhesive layer 21 after the heat treatment is preferably 1% by weight or less, and more preferably 0.8% by weight or less. The conditions for the heat treatment are, for example, a heating temperature of 250 ° C. and a heating time of 1 hour. By making the weight reduction rate 1% by weight or less, for example, it is possible to suppress or prevent the occurrence of cracks in the flip chip type semiconductor device in the reflow process. The weight reduction rate can be adjusted, for example, by adding an inorganic substance that can reduce the generation of cracks during lead-free solder reflow. In addition, when the adhesive layer 21 is formed of a resin composition containing a thermosetting resin, the weight reduction rate is that the heating temperature is 250 ° C. and the heating time is 1 hour with respect to the adhesive layer 21 after thermosetting. It means the value when heated under conditions.

(Protective layer)
The said protective layer 22 is laminated | stacked on the adhesive bond layer 21 at the film form, and is comprised with the heat resistant resin or metal whose glass transition temperature is 200 degreeC or more. In the flip chip type semiconductor back film, since the protective layer is provided in this way, it is possible to prevent the occurrence of a stain due to the flux during the flip chip bonding.

  The heat-resistant resin constituting the protective layer 22 is not particularly limited as long as the glass transition temperature is 200 ° C. or higher, and a so-called super engineering resin can be suitably used. For example, polyphenylene sulfide (PPS), polyimide (PI), polyetherimide (PEI), polyarylate (PAR), polysulfone (PSF), polyethersulfone (PES), polyetheretherketone (PEEK), liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE) Etc. Among these, at least one selected from the group consisting of polyimide, polyphenylene sulfide, polysulfone, polyetherimide, polyetherketone and polyetheretherketone from the viewpoint of availability and prevention of flux-derived spots. Some are preferred, and polyimide is particularly preferred.

  It does not specifically limit as a metal which comprises the protective layer 22, For example, it is preferable from the point of a laser marking property that it is at least 1 sort (s) selected from the group which consists of aluminum, alumite, stainless steel, iron, titanium, tin, and copper. . Among these, aluminum is particularly preferable in consideration of ease of processing and laser marking properties.

  The thickness of the protective layer 22 can be appropriately determined in consideration of workability and the like, and is usually in the range of 2 to 200 μm, preferably 3 to 100 μm, and more preferably 4 to 80 μm. 5 to 50 μm is particularly preferable.

  When the protective layer 22 is made of a heat resistant resin, the protective layer 22 may be colored. Moreover, when the protective layer 22 is comprised with the metal, you may provide a colored layer in the protective layer 22 surface. As the coloring method of the protective layer 22, the above-described coloring method of the adhesive layer can be suitably employed.

(Method for producing film for flip chip type semiconductor back surface)
First, the adhesive layer 21 is a resin in which, for example, a thermosetting resin such as an epoxy resin, a thermoplastic resin such as an acrylic resin as necessary, and a solvent or other additive are mixed as necessary. It can be formed using a conventional method of preparing a composition and forming it into a film-like layer. Specifically, for example, the resin composition is applied on a suitable separator (such as release paper) and dried (in the case where heat curing is necessary, heat treatment is performed as necessary to dry), Examples thereof include a method for forming an adhesive layer. Moreover, when forming directly on the adhesive layer of a dicing tape, the method of apply | coating the said resin composition on the adhesive layer 32 of a dicing tape, or the adhesive layer formed on the separator on the adhesive layer 32 A film-like adhesive layer can be formed by a method of transferring (transferring) to the film. The resin composition may be a solution or a dispersion. In addition, when heat-curing when forming the film 2 for semiconductor back surfaces, it is important to perform heat-curing to such an extent that it will be in the state of partial hardening, However Preferably heat-curing is not performed.

  Next, a film for a flip chip type semiconductor back surface can be produced by bonding the obtained adhesive layer and a protective layer separately prepared. As the protective layer, a commercially available heat resistant resin film or metal foil may be used. For example, when a polyimide film is employed as the protective layer, a polyimide film can be formed by applying a polyamic acid solution to a heat-resistant support substrate and imidizing at about 300 to 500 ° C. Furthermore, in the case of a metal protective layer, the metal thin film may be directly formed by sputtering or the like on the adhesive layer. The bonding condition between the adhesive layer and the protective layer is not particularly limited. For example, the bonding angle is 100 to 140 °, the pressure is 0.1 to 0.5 MPa, and the speed is 5 to 20 m / s. It is done.

(Dicing tape)
The dicing tape 3 is configured by forming an adhesive layer 32 on a base material 31. Thus, the dicing tape 3 should just have the structure by which the base material 31 and the adhesive layer 32 were laminated | stacked.

(Base material)
The substrate (support substrate) can be used as a support matrix such as an adhesive layer. The substrate 31 preferably has a radiation transparency. Examples of the substrate 31 include paper-based substrates such as paper; fiber-based substrates such as cloth, nonwoven fabric, felt, and net; metal-based substrates such as metal foils and metal plates; plastic films and sheets Plastic base materials; Rubber base materials such as rubber sheets; Foams such as foam sheets, and laminates thereof [particularly, laminates of plastic base materials and other base materials, and plastic films (or sheets) An appropriate thin leaf body such as a laminated body of each other] can be used. In the present invention, a plastic substrate such as a plastic film or sheet can be suitably used as the substrate. Examples of the material in such a plastic material include, for example, olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer such as ethylene copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins.

  Moreover, as a material of the base material 31, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet imparted with heat shrinkability by stretching or the like, the adhesive area between the pressure-sensitive adhesive layer 32 and the semiconductor back surface film 2 is reduced by thermally shrinking the base material 31 after dicing, The collection can be facilitated.

  The surface of the base material 31 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 31, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. The base material 31 is provided with a deposited layer of a conductive material having a thickness of about 30 to 500 mm made of a metal, an alloy, an oxide thereof, or the like on the base material 31 in order to impart an antistatic ability. be able to. The base material 31 may be a single layer or a multilayer of two or more types.

  The thickness of the substrate 31 (total thickness in the case of a laminated body) is not particularly limited and can be appropriately selected according to strength, flexibility, purpose of use, and the like. For example, it is generally 1000 μm or less (for example, 1 μm to 1000 μm), preferably 10 μm to 500 μm, more preferably 20 μm to 300 μm, particularly about 30 μm to 200 μm, but is not limited thereto.

  The base material 31 includes various additives (coloring agent, filler, plasticizer, anti-aging agent, antioxidant, surfactant, flame retardant, etc.) as long as the effects of the present invention are not impaired. It may be.

(Adhesive layer)
The adhesive layer 32 is formed of an adhesive and has adhesiveness. Such an adhesive is not particularly limited, and can be appropriately selected from known adhesives. Specifically, examples of the adhesive include acrylic adhesive, rubber adhesive, vinyl alkyl ether adhesive, silicone adhesive, polyester adhesive, polyamide adhesive, urethane adhesive, fluorine Type adhesives, styrene-diene block copolymer adhesives, and known adhesives such as a creep property-improving adhesive in which a hot-melt resin having a melting point of about 200 ° C. or less is blended with these adhesives (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, etc.) It can be selected and used. Moreover, as a pressure sensitive adhesive, a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) or a thermally expandable pressure sensitive adhesive can be used. An adhesive can be used individually or in combination of 2 or more types.

  As the pressure-sensitive adhesive, acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives can be suitably used, and acrylic pressure-sensitive adhesives are particularly preferable. As an acrylic adhesive, an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or more (meth) acrylic acid alkyl esters as monomer components. Agents.

  Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic. Butyl acid, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, ( Octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate, (meta Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, (meth) acrylic Examples include (meth) acrylic acid alkyl esters such as acid eicosyl. The (meth) acrylic acid alkyl ester is preferably a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group. In addition, the alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.

  In addition, the said acrylic polymer is another monomer component (for example) copolymerizable with the said (meth) acrylic-acid alkylester as needed for the purpose of modification | reformation, such as cohesion force, heat resistance, and crosslinkability. A unit corresponding to the copolymerizable monomer component) may be included. Examples of such copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyl such as carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Group-containing monomer; Acid anhydride group-containing monomer such as maleic anhydride, itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid, Sulfonic acid group-containing monomers such as rylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid; Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) (N-substituted) amide monomers such as acrylamide; (meth) acrylic acid such as aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, and t-butylaminoethyl (meth) acrylate A Noalkyl monomers; (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; glycidyl (meth) acrylate and the like Epoxy group-containing acrylic monomers; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imida Nitrogen-containing monomers such as benzene, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, N-vinyl caprolactam; maleimides such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide Monomers: Itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide N- (meth) acryloyloxymethylene succinimide, N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylenesk Succinimide monomers such as N-imide; glycol-based acrylic ester monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol; ) Acrylic acid ester monomer having heterocycle such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, halogen atom, silicon atom, etc .; hexanediol di (meth) acrylate, (poly) ethylene glycol Di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) a Chryrate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyl di (meth) acrylate, hexyl di (meth) And polyfunctional monomers such as acrylate. These copolymerizable monomer components can be used alone or in combination of two or more.

  When a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) is used as the pressure sensitive adhesive, examples of the radiation curable pressure sensitive adhesive (composition) include a radical reactive carbon-carbon double bond as a polymer side chain or a main chain. Intrinsic radiation curable adhesives that use polymers in the chain or at the end of the main chain as the base polymer, and radiation curable adhesives that contain UV-curable monomer or oligomer components in the adhesive It is done. Moreover, when using a heat-expandable adhesive as an adhesive, as a heat-expandable adhesive, the heat-expandable adhesive containing an adhesive and a foaming agent (especially heat-expandable microsphere) etc. are mentioned, for example.

  In the present invention, the pressure-sensitive adhesive layer 32 has various additives (for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, and an anti-aging agent as long as the effects of the present invention are not impaired. , Antioxidants, surfactants, cross-linking agents, etc.).

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent. , Metal salt crosslinking agents, carbodiimide crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, amine crosslinking agents, and the like, and isocyanate crosslinking agents and epoxy crosslinking agents are preferred. A crosslinking agent can be used individually or in combination of 2 or more types. In addition, the usage-amount of a crosslinking agent is not restrict | limited in particular.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The pressure-sensitive adhesive layer 32 is formed by using, for example, a conventional method of forming a sheet-like layer by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives. be able to. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent and other additives onto the base material 31, and applying the mixture onto an appropriate separator (such as a release paper). The pressure-sensitive adhesive layer 32 can be formed by a method in which the pressure-sensitive adhesive layer 32 is formed and transferred (transferred) onto the substrate 31.

  The adhesive force (23 ° C., peel angle 180 °, peel speed 300 mm / min) of the adhesive layer 32 of the dicing tape 3 to the flip chip type semiconductor back film 2 is in the range of 0.02 N / 20 mm to 10 N / 20 mm. A range of 0.05 N / 20 mm to 5 N / 20 mm is more preferable. By setting the adhesive force to 0.02 N / 20 mm or more, it is possible to prevent the semiconductor element from jumping when the semiconductor wafer is diced. On the other hand, by setting the adhesive force to 10 N / 20 mm or less, it is possible to prevent the semiconductor element from becoming difficult to peel or the adhesive residue from occurring when the semiconductor element is picked up.

  In the present invention, the anti-static ability can be imparted to the flip chip type semiconductor back film 2 and the dicing tape integrated semiconductor back film 1. As a result, it is possible to prevent the circuit from being broken due to the generation of static electricity during the bonding and peeling, and the resulting charging of the semiconductor wafer or the like. The antistatic ability is imparted by a method of adding an antistatic agent or a conductive substance to the base material 31, the adhesive layer 32 or the semiconductor backside film 2, a conductive layer comprising a charge transfer complex or a metal film to the base material 31. It can be performed by an appropriate method, such as a method of attaching a mark. As these methods, a method in which impurity ions that may change the quality of the semiconductor wafer are less likely to be generated is preferable. As a conductive substance (conductive filler) blended for the purpose of imparting conductivity and improving thermal conductivity, spherical, needle-like, and flaky shapes such as silver, aluminum, gold, copper, nickel, and conductive alloys Examples thereof include metal powders, metal oxides such as alumina, amorphous carbon black, and graphite. However, it is preferable that the film 2 for a semiconductor back surface is non-conductive from the viewpoint of preventing electrical leakage.

  Moreover, the film 2 for flip chip type semiconductor back surfaces and the film 1 for semiconductor back surfaces integrated with a dicing tape may be formed in a form wound in a roll shape, or formed in a form in which sheets (films) are laminated. May be. For example, when it has the form wound by roll shape, it rolls in the state which protected the laminated body of the film 2 for semiconductor back surfaces, or the film 2 for semiconductor back surfaces, and the dicing tape 3 with the separator as needed. It can be produced as a film 2 for semiconductor back surface or a film 1 for semiconductor back surface integrated with dicing tape in a state or form wound in a roll shape. In addition, as the dicing tape-integrated film for semiconductor back surface 1 in a state or form wound in a roll shape, a base material 31, an adhesive layer 32 formed on one surface of the base material 31, and the adhesive You may be comprised with the film for semiconductor back surfaces formed on the agent layer 32, and the peeling process layer (back process layer) formed in the other surface of the said base material 31. FIG.

  The thickness of the dicing tape-integrated film for semiconductor back surface 1 (the total thickness of the film for semiconductor back surface and the thickness of the dicing tape composed of the base material 31 and the adhesive layer 32) is, for example, 25 μm to 1600 μm. The range is preferably 30 μm to 850 μm (more preferably 35 μm to 500 μm, particularly preferably 50 μm to 330 μm).

  In the dicing tape-integrated film for semiconductor back surface 1, the ratio of the thickness of the film for semiconductor back surface 2 to the thickness of the adhesive layer 32 of the dicing tape 3, the thickness of the film for semiconductor back surface 2, and the thickness of the dicing tape 3 By controlling the ratio with the thickness (total thickness of the base material 31 and the adhesive layer 32), the dicing property during the dicing process, the picking property during the pick-up process, etc. can be improved, and the dicing tape integrated semiconductor The film for back surface 1 can be effectively used in a dicing process for a semiconductor wafer to a flip chip bonding process for a semiconductor chip.

(Manufacturing method of dicing tape integrated semiconductor back film)
A method for manufacturing a dicing tape-integrated film for semiconductor back surface according to the present embodiment will be described using the dicing tape-integrated film for semiconductor back surface 1 shown in FIG. 1 as an example. First, the base material 31 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, the pressure-sensitive adhesive composition is applied on the substrate 31 and dried (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 32. Examples of the coating method include roll coating, screen coating, and gravure coating. The pressure-sensitive adhesive layer composition may be applied directly to the base material 31 to form the pressure-sensitive adhesive layer 32 on the base material 31. Also, a release paper or the like that has been subjected to a release treatment on the surface of the pressure-sensitive adhesive composition. The pressure-sensitive adhesive layer 32 may be transferred to the substrate 31 after being applied to the substrate. Thereby, the dicing tape 3 in which the adhesive layer 32 is formed on the base material 31 is produced.

  By transferring the flip chip type semiconductor back film 2 produced in the above-described procedure onto the adhesive layer 32 of the obtained dicing tape 3, the dicing tape integrated semiconductor back film 1 according to the present invention is obtained. Can do. At this time, the semiconductor back surface film 2 is transferred to the dicing tape 3 so that the protective layer 32 of the semiconductor back surface film 2 is on the pressure-sensitive adhesive layer 32 side.

  The dicing tape-integrated film for semiconductor back surface 1 of the present invention can be suitably used for manufacturing a semiconductor device having a flip chip bonding process. That is, the dicing tape-integrated film for semiconductor back surface 1 of the present invention is used when manufacturing a flip-chip mounted semiconductor device, and the film for semiconductor back surface of the dicing tape-integrated film for semiconductor back surface 1 is formed on the back surface of the semiconductor chip. A flip-chip mounted semiconductor device is manufactured in a state or form in which 2 is adhered. Therefore, the dicing tape-integrated film for semiconductor back surface 1 of the present invention is applied to a flip-chip mounted semiconductor device (a semiconductor device in a state or form in which the semiconductor chip is fixed to an adherend such as a substrate by a flip-chip bonding method). Can be used.

  The semiconductor back film 2 is a flip chip mounted semiconductor device (in a state where the semiconductor chip is fixed to an adherend such as a substrate or the like by a flip chip bonding method, similarly to the dicing tape integrated semiconductor back film 1. It can be used for the semiconductor device of the embodiment.

(Semiconductor wafer)
The semiconductor wafer is not particularly limited as long as it is a known or conventional semiconductor wafer, and can be appropriately selected from semiconductor wafers of various materials. In the present invention, a silicon wafer can be suitably used as the semiconductor wafer.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device according to the present embodiment will be described below with reference to FIG. FIG. 3 is a schematic cross-sectional view showing a method for manufacturing a semiconductor device when the dicing tape-integrated film for semiconductor back surface 1 is used.

  The semiconductor device manufacturing method can manufacture a semiconductor device using the dicing tape-integrated film for semiconductor back surface 1. Specifically, a step of attaching a semiconductor wafer on a flip chip type semiconductor back film in the dicing tape integrated semiconductor back film, a step of dicing the semiconductor wafer to form a semiconductor element, and the semiconductor A step of peeling the element from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film, a step of attaching a flux to a connecting member to the adherend in the semiconductor element, and the semiconductor element And at least a flip-chip connection process on the body.

[Mounting process]
First, as shown in FIG. 3 (a), a separator arbitrarily provided on the film 2 for semiconductor back surface of the film 1 for semiconductor back surface integrated with dicing tape is appropriately peeled off, and the film 2 for semiconductor back surface is formed. The semiconductor wafer 4 is attached, and this is adhered and held and fixed (mounting process). At this time, the film 2 for semiconductor back surface is in an uncured state (including a semi-cured state). The dicing tape-integrated film for semiconductor back surface 1 is attached to the back surface of the semiconductor wafer 4. The back surface of the semiconductor wafer 4 means a surface opposite to the circuit surface (also referred to as a non-circuit surface or a non-electrode forming surface). Although the sticking method is not specifically limited, the method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll.

[Dicing process]
Next, as shown in FIG. 3B, the semiconductor wafer 4 is diced. As a result, the semiconductor wafer 4 is cut into a predetermined size and separated into pieces (small pieces), whereby the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing tape-integrated film for semiconductor back surface 1 can be employed. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer 4 is bonded and fixed with excellent adhesion by the dicing tape-integrated semiconductor back surface film 1 having a semiconductor back surface film, chip chipping and chip jumping can be suppressed, and the semiconductor wafer 4 is damaged. Can also be suppressed. In addition, when the film 2 for semiconductor back surface is formed with the resin composition containing an epoxy resin, even if it cut | disconnects by dicing, it suppresses that the adhesive paste of the adhesive layer of the film for semiconductor back surface arises in the cut surface, or Can be prevented. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when expanding the dicing tape-integrated film for semiconductor back surface 1, the expanding can be performed using a conventionally known expanding apparatus. The expander supports a donut-shaped outer ring that can push down the dicing tape-integrated semiconductor back surface film 1 downward through the dicing ring, and a dicing tape-integrated semiconductor back surface film that is smaller in diameter than the outer ring. And an inner ring. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

[Pickup process]
In order to collect the semiconductor chip 5 adhered and fixed to the dicing tape-integrated film 1 for semiconductor back surface, the semiconductor chip 5 is picked up as shown in FIG. The film 2 is peeled off from the dicing tape 3. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor chips 5 from the substrate 31 side of the dicing tape-integrated film for semiconductor back surface 1 with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device or the like can be mentioned. Note that the back surface of the picked-up semiconductor chip 5 is protected by the film 2 for semiconductor back surface.

[Flip chip connection process]
As shown in FIG. 3D, the picked-up semiconductor chip 5 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method). Specifically, the semiconductor chip 5 is always placed on the adherend 6 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip 5 faces the adherend 6. Fix according to law. For example, first, bumps 51 as connection members formed on the circuit surface side of the semiconductor chip 5 are brought into contact with the flux, and the flux is attached to the bumps 51. Next, the bump 51 and the conductive material are melted while the bump 51 of the semiconductor chip 5 is brought into contact with and pressed against a bonding conductive material (solder or the like) 61 attached to the connection pad of the adherend 6. The electrical continuity between the chip 5 and the adherend 6 can be ensured, and the semiconductor chip 5 can be fixed to the adherend 6 (flip chip bonding step). At this time, a gap is formed between the semiconductor chip 5 and the adherend 6, and the air gap distance is generally about 30 μm to 300 μm. After the flip chip bonding (flip chip connection) of the semiconductor chip 5 on the adherend 6, the flux remaining on the opposing surface or gap between the semiconductor chip 5 and the adherend 6 is cleaned and removed. It is important to seal by filling a sealing material (such as a sealing resin).

  As the adherend 6, various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.

  In the flip chip bonding process, the material of the bump or the conductive material is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal. Materials, solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.

  In the flip chip bonding process, the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 5 and the conductive material on the surface of the adherend 6. The temperature at the time is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.). The dicing tape-integrated film for semiconductor back surface of the present invention can have heat resistance that can withstand high temperatures in the flip chip bonding process by forming the film for semiconductor back surface with an epoxy resin or the like.

  In this step, it is preferable to clean the facing surface (electrode forming surface) and the gap between the semiconductor chip 5 and the adherend 6. The cleaning liquid used for the cleaning is not particularly limited, and examples thereof include an organic cleaning liquid and an aqueous cleaning liquid. The film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface of the present invention has solvent resistance to the cleaning liquid, and has substantially no solubility in these cleaning liquids. Therefore, as described above, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and cleaning can be performed by a conventional method.

  In the method of manufacturing a semiconductor device according to the present invention, since the flip chip bonding process is performed using the film for semiconductor back surface provided with the protective layer, even if the soldering flux adheres to the back surface of the semiconductor chip, the semiconductor back surface It does not remain in the film for use, and thus it is possible to prevent the occurrence of spots derived from the flux.

  Next, a sealing step for sealing the gap between the flip-chip bonded semiconductor chip 5 and the adherend 6 is performed. The sealing step is performed using a sealing resin. Although it does not specifically limit as sealing conditions at this time, Usually, the thermosetting of the sealing resin is performed by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited thereto, For example, it can be cured at 165 ° C. to 185 ° C. for several minutes. In the heat treatment in this step, not only the sealing resin but also the thermosetting of the semiconductor back film 2 is performed at the same time. Thereby, both sealing resin and the film 2 for semiconductor back surfaces carry out hardening shrinkage with progress of thermosetting. As a result, the stress applied to the semiconductor chip 5 due to the curing shrinkage of the sealing resin can be offset or alleviated by the semiconductor back film 2 being cured and shrunk. Moreover, the film 2 for semiconductor back surfaces can be thermoset completely or almost completely by the said process, and can be stuck on the back surface of a semiconductor element with the outstanding adhesiveness. Furthermore, since the film for semiconductor back surface 2 according to the present invention can be thermally cured together with the sealing material in the sealing step even in an uncured state, the film for semiconductor back surface 2 is thermally cured. There is no need to add a new process.

  The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin may be included as a resin component. Good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

Since the semiconductor device manufactured using the dicing tape-integrated film 1 for semiconductor back surface and the film 2 for semiconductor back surface (flip chip mounting semiconductor device) has the film for semiconductor back surface attached to the back surface of the semiconductor chip. Various markings can be applied with excellent visibility. In particular, even if the marking method is a laser marking method, marking can be performed with an excellent contrast ratio, and various information (character information, Zuken information, etc.) applied by laser marking can be seen well. is there. In addition, when performing laser marking, a well-known laser marking apparatus can be utilized. As the laser, various lasers such as a gas laser, a solid laser, and a liquid laser can be used. Specifically, the gas laser is not particularly limited, and a known gas laser can be used, but a carbon dioxide laser (CO ₂ laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser). Etc.) are preferred. The solid laser is not particularly limited, and a known solid laser can be used, but a YAG laser (Nd: YAG laser or the like) and a YVO ₄ laser are preferable.

  Since the semiconductor device manufactured using the dicing tape-integrated film for semiconductor back surface and the film for semiconductor back surface of the present invention is a semiconductor device mounted by a flip chip mounting method, the semiconductor device mounted by a die bonding mounting method Instead, the shape is reduced in thickness and size. For this reason, it can use suitably as various electronic devices and electronic components, or those materials and members. Specifically, as an electronic device using the flip-chip mounted semiconductor device of the present invention, a so-called “mobile phone” or “PHS”, a small computer (for example, a so-called “PDA” (personal digital assistant)), a so-called "Notebook PC", so-called "Netbook (trademark)", so-called "wearable computer", etc.), "mobile phone" and small electronic devices integrated with a computer, so-called "digital camera (trademark)", so-called "digital" Mobile devices such as video cameras, small TVs, small game devices, small digital audio players, so-called “electronic notebooks”, so-called “electronic dictionaries”, so-called “electronic books” electronic device terminals, small digital-type watches, etc. Type electronic devices (portable electronic devices), but of course It may be an electronic device other than a mobile type (such as a setting type) (for example, a so-called “disc top PC”, a flat-screen TV, a recording / playback electronic device (hard disk recorder, DVD player, etc.), a projector, a micromachine, etc.) . Examples of materials and members of electronic components or electronic devices / electronic components include so-called “CPU” members, members of various storage devices (so-called “memory”, hard disks, etc.), and the like.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In each example, all parts are based on weight unless otherwise specified.

<Preparation of adhesive layer>
Acrylate ester-based polymer (trade name “Paracron W-197CM” manufactured by Negami Kogyo Co., Ltd.) containing ethyl acrylate-methyl methacrylate as a main component: 100 parts of epoxy resin (trade name “Epicoat 1004” JER Corporation) 113 parts, phenol resin (trade name “Millex XLC-4L” manufactured by Mitsui Chemicals, Inc.): 121 parts, spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.): 246 parts, dye 1 ( Product name “OIL GREEN 502” manufactured by Orient Chemical Industry Co., Ltd .: 5 parts, Dye 2 (trade name “OIL BLACK BS” manufactured by Orient Chemical Industry Co., Ltd.): 5 parts were dissolved in methyl ethyl ketone, and the solid content concentration was 23 A solution of the adhesive composition to be 6% by weight was prepared.

  By applying this adhesive composition solution on a release film made of a polyethylene terephthalate film having a thickness of 50 μm subjected to silicone release treatment as a release liner (separator), and then drying at 130 ° C. for 2 minutes, An adhesive layer A having a thickness (average thickness) of 10 μm was produced.

Example 1
<Preparation of film for semiconductor back surface>
The obtained adhesive layer A and an aluminum foil having a thickness of 10 μm as a protective layer (manufactured by Toyo Aluminum Co., Ltd., 1N30) are bonded together under the conditions of a bonding angle of 120 °, a pressure of 0.2 MPa, and a speed of 10 mm / s. Thus, a film for a semiconductor back surface was produced.

(Example 2)
<Preparation of film for semiconductor back surface>
The obtained adhesive layer A and a 12.5 μm-thick polyimide film (manufactured by Kaneka Corp., Apical) as a protective layer were bonded under the conditions of a bonding angle of 120 °, a pressure of 0.2 MPa, and a speed of 10 mm / s. In addition, a film for semiconductor back surface was produced.

(Comparative Example 1)
An adhesive layer having a thickness (average thickness) of 20 μm was prepared according to the procedure of <Preparation of Adhesive Layer>, and this adhesive layer was used as a film for a semiconductor back surface without providing a protective layer.

<Production of dicing tape integrated semiconductor back film>
Dicing tape (trade name “V-8-T” manufactured by Nitto Denko Corporation; average thickness of substrate: 65 μm, average thickness of adhesive layer: The film was laminated on a 10 μm) pressure-sensitive adhesive layer using a hand roller to prepare a dicing tape-integrated film for semiconductor back surface.

(Evaluation of flux contamination)
A semiconductor wafer (diameter 8 inches, thickness 0.6 mm; silicon mirror wafer) was subjected to back surface polishing, and a mirror wafer having a thickness of 0.2 mm was used as a workpiece. After the separator was peeled from the dicing tape-integrated film for semiconductor back surface, a mirror wafer (work) was roll-bonded onto the film for semiconductor back surface at 70 ° C. and bonded. Semiconductor wafer grinding conditions and bonding conditions are as follows.

(Semiconductor wafer grinding conditions)
Grinding equipment: Product name “DFG-8560” manufactured by Disco Corporation Semiconductor wafer: 8 inch diameter (back grinding from 0.6 mm to 0.2 mm thickness)
(Bonding conditions)
Pasting device: Trade name “MA-3000III” manufactured by Nitto Seiki Co., Ltd. Pasting speed meter: 10 mm / min
Pasting pressure: 0.15 MPa
Stage temperature at the time of pasting: 70 ° C

  A drop of flux (RM-26-20, manufactured by Tamura Co., Ltd.) is dropped onto the film for semiconductor back surface that is bonded to the semiconductor wafer, and a reflow process is performed under the lead solder conditions defined by JEDEC. The case where there was no flux was evaluated as “O”, and the case where it occurred was evaluated as “X”, and the flux contamination was evaluated. The results are shown in Table 1.

(Reflow conditions)
Temperature: Peak temperature is 260 ° C
Time: 30 seconds at peak temperature

  As is clear from Table 1, in the dicing tape-integrated film for semiconductor back surface according to Examples 1 and 2, no spots derived from the flux were generated, and the appearance of the film for semiconductor back surface was good. On the other hand, in the film for semiconductor back surface of Comparative Example 1, spots derived from the flux were generated, resulting in poor appearance.

DESCRIPTION OF SYMBOLS 1 Dicing tape integrated film for semiconductor back surfaces 2 Film for semiconductor back surfaces 21 Adhesive layer 22 Protective layer 3 Dicing tape 31 Base material 32 Adhesive layer 33 The part corresponding to the sticking part of a semiconductor wafer 4 Semiconductor wafer 5 Semiconductor chip 51 Semiconductor Bump formed on the circuit surface side of the chip 5 6 Adhering member 61 Conductive material for bonding adhered to the connection pad of the adherend 6

Claims (4)

A method for manufacturing a semiconductor device using a dicing tape-integrated film for semiconductor back surface,
The dicing tape integrated semiconductor back film is
A dicing tape in which an adhesive layer is laminated on a substrate;
A flip chip type semiconductor back film disposed on the back surface of a semiconductor element flip-chip connected to an adherend, a thermosetting adhesive layer, and a protective layer laminated on the adhesive layer A flip chip type semiconductor back film, wherein the protective layer is made of metal, and
On the adhesive layer, the film for flip-chip type semiconductor back surface is laminated with the dicing tape integrated semiconductor back surface facing the protective layer side,
The method for manufacturing the semiconductor device includes:
Adhering a semiconductor wafer on the flip chip type semiconductor back film in the dicing tape integrated semiconductor back film;
Forming a semiconductor element by dicing the semiconductor wafer;
The step of peeling the semiconductor element from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film,
A step of attaching a flux to a connection member with an adherend in the semiconductor element;
And a step of flip chip connecting the semiconductor element onto the adherend.   The method for manufacturing a semiconductor device according to claim 1, wherein the metal is at least one selected from the group consisting of aluminum, anodized, stainless steel, iron, titanium, tin, and copper.   The method for manufacturing a semiconductor device according to claim 1, further comprising a step of marking the protective layer of the film for flip chip type semiconductor back surface after the flip chip connecting step. The method of manufacturing a semiconductor device according to claim 3, wherein the marking is a laser marking.

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