JP3307207B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which protects an integrated circuit portion of a semiconductor device, stably secures an electrical connection between an external device and the semiconductor device, and enables the highest density mounting. It relates to a manufacturing method. The semiconductor device of the present invention and the manufacturing method thereof facilitate miniaturization of industrial electronic devices such as information communication devices, office electronic devices, home electronic devices, measuring devices, assembling robots, medical electronic devices, and electronic toys. It is to be.

[0002]

2. Description of the Related Art In recent years, as a method for mounting a semiconductor element on a circuit board, a package using a flip-chip mounting method has been studied.

Hereinafter, a conventional semiconductor device will be described with reference to the drawings. FIG. 12 is a plan view of a conventional semiconductor device called a chip size package (CSP).
3 is a bottom view thereof. FIG. 14 is a sectional view taken along line A-A1 in FIG.

As shown in FIGS. 12, 13 and 14, a semiconductor element 3 having an Au bump 2 formed on an electrode pad 1 on the surface is bonded to a semiconductor carrier 4 with the surface side down. A plurality of electrodes 5 for conduction with the semiconductor element 3 are formed on the upper surface of the semiconductor carrier 4, and the electrode 5 and the Au bump 2 formed on the semiconductor element 3 are joined by a conductive adhesive 6. ing. The conductive adhesive 6 is made of Au
It is supplied to the bump 2 in advance. The gap between the bonded semiconductor element 3 and the semiconductor carrier 4 and the end of the semiconductor element 3 are filled and covered with an epoxy-based sealing resin 7. As shown in FIG. 13, external electrode terminals 8 made of Ag-Pd are formed in a lattice pattern at regular intervals as a metallized metal layer on the bottom surface of the semiconductor carrier 4 which is a multilayer circuit board. As shown in FIG.
On the back surface of the semiconductor element 3, a mark 9 indicating a product type or the like is formed.

Next, a conventional method for manufacturing a semiconductor device will be described with reference to the drawings. 15 to 20 are partial cross-sectional views showing a conventional method of manufacturing a semiconductor device for each process.

First, as shown in FIG. 15, an Au bump 2 (Au double projection) is formed on an electrode pad 1 of a semiconductor element 3 by using a wire bonding method (ball bonding method).
To form In this method, as shown in FIG. 16, a ball formed at the tip of the Au wire 10 is heat-pressed to an aluminum electrode to form a lower portion of the two-step projection (first bond), and further move the capillary 11. The upper step portion of the two-step projection is formed with the Au wire loop formed by the above (second bond). In the state described above, Au
Since the height of the two-step projections is not uniform and lacks the flatness of the top of the head, the Au two-step projections are pressed to make the height uniform and to flatten the top of the head, so-called leveling.

Next, as shown in FIG. 17, a conductive adhesive 6 is supplied to the Au bump 2 on the semiconductor element 3. As the conductive adhesive 6, an adhesive made of, for example, epoxy resin as a binder and an Ag-Pd alloy as a conductive filler is used in consideration of reliability, thermal stress, and the like as described above.

Next, as shown in FIG. 18, the Au bump 2 supplied with the conductive adhesive 6 on the semiconductor element 3 is formed by a flip chip method, which is a method of mounting the semiconductor element 3 with its surface down. An electrode 5 on a semiconductor carrier 4 in which external electrode terminals 8 are formed in a grid pattern at regular intervals on the bottom surface.
Are joined with good positional accuracy, and then thermally cured at a certain temperature.

As shown in FIG. 19, an epoxy-based sealing resin 7 is applied to the peripheral end of the semiconductor element 3 and to the semiconductor element 3.
Into the gap formed between the semiconductor carrier 4 and
The semiconductor device was completed by curing the sealing resin at a certain temperature and performing resin molding.

As shown in FIG. 20, there is a step (marking step) for forming a display such as a product name on the completed semiconductor device, and the back surface of the semiconductor element 3 is exposed. Was cut directly with a laser marker or the like to form marks 9 such as characters and symbols. In FIG. 20, the location of the mark 9 cut by the laser marker is schematically shown as unevenness.

[0011]

However, in the conventional semiconductor device, as shown in FIG.
A mark 9 such as a character or a symbol is directly formed on the back surface of the semiconductor device by a laser marker. That is, the semiconductor element 3 is a silicon substrate having a thickness of about 350 μm. When the mark 9 is formed by laser surface cutting, a shock is applied to the semiconductor element, and a circuit formed on the surface of the semiconductor element is destroyed. As a result, there is a possibility that the properties may be adversely affected.

SUMMARY OF THE INVENTION The present invention solves such a problem in the conventional example. In a semiconductor device having a structure in which the back surface of a semiconductor element is exposed, attention is paid to destruction of the semiconductor element during a marking step. It is an object of the present invention to provide a semiconductor device capable of preventing destruction and marking, and a method for manufacturing the same.

[0013]

In order to solve the above-mentioned problems, a semiconductor device according to the present invention has the following configuration. A semiconductor carrier, a semiconductor element bonded to the upper surface of the semiconductor carrier, a plurality of bump electrodes provided on the electrode pads on the semiconductor element, and connecting the semiconductor element and the plurality of electrodes on the semiconductor carrier; A semiconductor device comprising: a conductive adhesive that connects a plurality of electrodes on a top surface and a two-stage bump electrode; and a resin that fills and covers a gap between a semiconductor element and a semiconductor carrier and a peripheral end of the semiconductor element. A marking member is formed on the back surface of the element, and a mark is formed on the marking member.

In the method of manufacturing a semiconductor device according to the present invention, a step of forming a bump, which is a two-step projection electrode, on an electrode pad on a semiconductor element, a step of supplying a conductive adhesive to the bump, Bonding the upper bump connecting electrode and the bump on the semiconductor element via a conductive adhesive, injecting a sealing resin into a gap between the semiconductor element and the semiconductor carrier, curing the resin, and performing resin sealing After forming the semiconductor device component by the process, the semiconductor device component is bonded to the aluminum plate on which the heat radiation grease is formed, in a face-down manner, and a marking member is formed on the back surface of the semiconductor element, This is a method for manufacturing a semiconductor device that performs marking on the marking member.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS With the above-described configuration, the semiconductor device of the present invention has a laser marking by forming a marking member on the back surface of a semiconductor element and forming a mark on the marking member. In this case, a shock or the like is prevented, and a circuit or the like formed on the surface of the semiconductor element is destroyed, which does not adversely affect the characteristics and does not cause a crack or the like in the semiconductor element. In addition, the bonding between the marking member and the back surface of the semiconductor element is performed by bonding with heat radiation grease, and in combination with the marking member made of an aluminum plate, heat generated from the semiconductor element can be efficiently transmitted to the marking member and radiated. It is also possible to improve heat dissipation as a semiconductor device.

In the method of manufacturing a semiconductor device according to the present invention, in particular, after forming a semiconductor device structure, the semiconductor device structure is bonded to an aluminum plate on which heat radiation grease is formed by a face-down method. Since a marking member is formed on the back surface of the semiconductor element and the marking member is marked, the semiconductor element is prevented from being subjected to an impact at the time of laser marking, and a circuit formed on the surface of the semiconductor element. Are not destroyed, adversely affecting the characteristics, and destruction such as cracks in the semiconductor element does not occur.

An embodiment of a semiconductor device according to the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view of this embodiment, FIG.
FIG. 3 is a sectional view taken along line A-A1 in FIG.

First, the configuration of this embodiment will be described with reference to FIGS. As shown in FIGS. 1, 2 and 3, a semiconductor element 3 in which a two-stage Au bump 2 is formed on an electrode pad 1 on the surface is a multilayer circuit board using ceramic as an insulating base with the surface side down. Is bonded to the semiconductor carrier 4. A plurality of electrodes 5 for conduction with the semiconductor element 3 are formed on the upper surface of the semiconductor carrier 4, and the electrodes 5 and the Au bumps 2 formed on the semiconductor element 3 are formed.
Are joined by a conductive adhesive 6. Conductive adhesive 6
Are supplied to the Au bumps 2 in advance. And
The gap between the bonded semiconductor element 3 and the semiconductor carrier 4 and the end of the semiconductor element 3 are filled and covered with an epoxy-based sealing resin 7.

In this embodiment, an aluminum plate 12 as a marking member is joined to the back surface of the semiconductor element 3 exposed on the front surface via a heat radiation grease 13 as an adhesive. A mark 9 such as a character or a symbol of a product type is provided. Even if the aluminum plate 12 is cut with a laser and marked by the interposition of the aluminum plate 12 serving as the marking member, only the surface of the aluminum plate 12 is shaved. This prevents the circuit and the like formed on the surface of the semiconductor element from being destroyed, adversely affecting the characteristics, and preventing the semiconductor element 3 from being cracked or the like.
The thickness of the aluminum plate 12 is about 200 μm. The aluminum plate 12 and the semiconductor element 3
Is bonded to the aluminum plate 12 by heat radiation grease 13 and, in combination with the aluminum plate, efficiently transfers heat generated from the semiconductor element 3 to the aluminum plate 12.
Heat can be dissipated, and the heat dissipation of the semiconductor device can be improved.

In this example, the back surface of the semiconductor element 3
Although the aluminum plate 12 is provided as the marking member, a plate made of a material other than the aluminum plate that can be laser-marked and has good heat dissipation (high thermal conductivity) may be used. Furthermore, even if the marking member is not plate-shaped,
The semiconductor element 3 may be formed by forming a film of a material that can be laser-marked and has good heat dissipation (high thermal conductivity) on the back surface.

The sealing resin 7 is a resin obtained by adding a high thermal conductive ceramic such as aluminum nitride (AlN) or silicon carbide (SiC) as a filler to an epoxy resin. As shown in FIG. 2, circular external electrode terminals 8 made of Ag-Pd are formed in a lattice pattern at regular intervals on the bottom surface of the semiconductor carrier 4 which is a multilayer circuit board, as a metallized metal layer. The external electrode terminals 8 are arranged such that the arrangement of the electrodes 5 on the semiconductor carrier 4 is first routed by a pattern on the surface thereof, routed inside the semiconductor carrier 4 by vias, and arranged in a lattice on the bottom surface. . Cu and Au other than Ag-Pd may be used as the metallized metal layer. Further, for the purpose of preventing surface oxidation of the electrode material, Au plating, a conductive adhesive 6 used for bonding the Au bump 2 of the semiconductor element 3 and the semiconductor carrier 4 are used.
When solder is used, Ni plating is performed for the purpose of preventing the metallized solder from being eroded.

The first purpose of using an epoxy resin for the sealing resin 7 is that the thermal stress caused by the thermal stress difference between the semiconductor element 3 and the semiconductor carrier 4 is reduced by the Au bump 2 and the conductive adhesive 6. This is in order not to concentrate on The semiconductor element 3 is made of an epoxy resin having a large elastic modulus after curing.
And the semiconductor carrier 4 are firmly fixed, so that the stress based on the difference in the amount of deformation of the semiconductor carrier 4 and the semiconductor element 3 due to the temperature change is converted into bending deformation based on the bimetal principle. This is for eliminating the stress. Second, epoxy resins have a lower moisture permeability than other resins such as novolak resins. Third, silica (SiO 2) which is generally used as a filler for an epoxy resin is used.
₂ ) Instead of adding aluminum nitride (AlN) to silicon carbide (SiC) as a high thermal conductive ceramic, it is possible to control the coefficient of thermal expansion and thermal conductivity, and to generate heat due to the operation of the semiconductor device. This is because a temperature rise can be prevented and stress generated in the semiconductor device can be reduced.

Although the bump electrodes are made of Au bumps 2, Pt (platinum), Ag (silver), Al
(Aluminum) or Cu (copper).

Next, an example of an embodiment of a method of manufacturing a semiconductor device according to the present invention will be described with reference to FIGS.

First, as shown in FIG. 4, Au bumps 2 (two-step Au projections) are formed on the electrode pads 1 on the semiconductor element 3 by using a wire bonding method (ball bonding method). In this method, as shown in the enlarged view of FIG. 5, a ball formed at the tip of the Au wire 10 is heat-pressed to an electrode pad 1 which is an aluminum electrode to form a lower step portion 2a of a two-step projection (first step). A) formed by moving the capillary 11 further
The upper step 2b of the two-step projection is formed with a u-wire loop (second bond). After the formation of the Au bump 2,
Since the height of the Au two-step projection is not uniform and the flatness of the crown is lacking, the height of the Au two-step projection is made uniform and the top of the head is flattened by so-called leveling by pressing the Au two-step projection. .

Next, a conductive adhesive 6 containing Ag-Pd as a conductive material is applied on the rotating disk by a doctor blade method to an appropriate thickness. At this time, the conductive adhesive 6 is stirred on a disk with a squeegee in order to always maintain a fresh surface. As shown in FIG. 6, the conductive adhesive 6 is applied to the region of the upper step portion 2b of the Au bump 2 by a method of pressing the semiconductor element 3 provided with the Au bump 2 on the conductive adhesive 6 and then pulling up the semiconductor element 3, as shown in FIG. Supply. As the conductive adhesive 6, an adhesive made of, for example, epoxy resin as a binder and an Ag-Pd alloy as a conductive filler is used in consideration of reliability, thermal stress, and the like.

Next, as shown in FIG. 7, the Au bump 2 to which the conductive adhesive 6 has been supplied on the semiconductor element 3 is formed by a flip chip method, which is a method of mounting the semiconductor element 3 with its surface down. After bonding the electrodes 5 on the semiconductor carrier 4 whose external electrode terminals 8 are formed at regular intervals in a lattice pattern on the bottom surface with good positional accuracy, they are thermally cured at a constant temperature. As the conductive adhesive 6, for example, epoxy resin as a binder and Ag-P as a conductive filler
As for the curing conditions when a conductive adhesive made of d alloy is used, the bonding is completed by heating at a temperature of 100 ° C. for 1 hour and at a temperature of 120 ° C. for 2 hours.

Then, as shown in FIG. 8, an epoxy-based sealing resin 7 is injected into the peripheral edge of the semiconductor element 3 and into a gap formed between the semiconductor element 3 and the semiconductor carrier 4 to maintain a constant temperature. And resin molded. As a method of this resin molding, a sealing resin 7 is injected from one direction into a gap formed between the semiconductor element 3 and the semiconductor carrier 4 using an injection nozzle, and the gap is filled. The part is sealed. As the sealing resin 7, a resin obtained by adding aluminum nitride (AlN) or silicon carbide (SiC), which is a high thermal conductive ceramic, as a filler to an epoxy resin is used. By heating in an oven after supplying the sealing resin 7, the sealing resin 7 is cured,
The semiconductor device structure 14 is completed.

Next, as shown in FIG. 9, a wide aluminum plate 15 having a thickness of about 200 μm is cut as a marking member so as to have a size equivalent to that of the semiconductor element 3.
A divided aluminum plate 12 is formed, and heat radiation grease 13 is uniformly applied on the base 16 to the surface thereof.

Then, as shown in FIG. 10, the semiconductor device structure 14 shown in FIG. 9 is joined to the aluminum plate 12 on the base 16 by the heat radiation grease 13 formed on the aluminum plate 12. This bonding method is a bonding method in which the semiconductor device component 14 is bonded in a face-down manner, that is, by bonding with the back surface of the semiconductor element 3 facing down.

Finally, as shown in FIG. 11, laser marking is performed on the aluminum plate 12 of the semiconductor device structure 14, and the aluminum plate 12 is cut to form marks 9 such as characters and symbols unique to the product type. To complete the semiconductor device.

In the method of manufacturing a semiconductor device according to the present embodiment, the aluminum plate 12 obtained by cutting the aluminum wide plate 15 is bonded to the back surface of the semiconductor element 3 through heat radiation grease. In addition to the plate, a plate made of a material that can be laser-marked and has good heat dissipation (high thermal conductivity) may be bonded. Furthermore, even if the marking member is not plate-shaped, the semiconductor element 3
Alternatively, a method of forming a film of a material that can be laser-marked and has good heat dissipation (high thermal conductivity) on the back surface of the substrate may be used.

For reference, an example of the production of the semiconductor carrier 4 will be described. First, a ceramic powder is put into a mixing mill together with a glass powder and a solvent, and is subjected to rotational mixing and pulverization.
Further, an organic binder is added and further mixed. Usually, the ceramic powder is mainly composed of alumina, but a powder of aluminum nitride (AlN), silicon carbide (SiC) or the like is also added in order to particularly improve the thermal conductivity. After thorough mixing, the resulting slurry, a so-called slurry, is applied to the carrier sheet at any thickness for green sheet molding. The doctor blade method or the like is used for adjusting the thickness. The slurry on the conveying sheet is dried with infrared rays and hot air to obtain a green sheet having high elasticity and excellent permeability of the paste solvent at the time of printing the conductive paste. When the wiring rule is 200 μm or more, a guide hole is provided directly on the green sheet as a positioning method for the green sheet, and when the wiring rule is less than 200 μm, the green sheet is attached to a holding frame having the guide hole. Next, holes are formed by mechanical processing in the front and back portions of the green sheet that require electrical conduction. These holes are filled with a conductive paste mainly containing Cu powder by a printing method. Next, after printing necessary circuits on the surface of the green sheet, drying is performed, and the printed circuit is buried in the green sheet with an appropriate load. The purpose of this is to make the surface of the green sheet on which the circuit is printed flat, thereby preventing lamination failure in the subsequent lamination step, so-called delamination.
In the laminating step, the green sheets stacked with high precision are pressed by the guide holes provided in the green sheets or the guide holes of the holding frame, thereby firmly bonding the green sheets.

The Sn-Pb eutectic solder cream is applied to the grid electrodes formed on the back of the ceramic carrier thus completed. And after the high melting point solder ball is supplied to the applied solder cream using the alignment jig,
The semiconductor carrier 4 is formed by forming a solder bump by heating and melting using a reflow furnace or the like.

As described above, the semiconductor device of the present invention comprises a semiconductor carrier comprising an insulating substrate having a plurality of electrodes 5 on the upper surface and external electrode terminals 8 arranged in a lattice on the lower surface. 4, a semiconductor element 3 bonded to the upper surface of the semiconductor carrier 4, a conductive adhesive 6 connecting the semiconductor element 3 and a plurality of electrodes 5 on the semiconductor carrier 4, and a gap between the semiconductor element 3 and the semiconductor carrier 4. And a sealing resin 7 filling and covering the peripheral end of the semiconductor element 3. An aluminum plate 12 is formed as a marking member on the back surface of the semiconductor element 3, and the marking member is This is a semiconductor device on which marks are formed. Therefore, instead of directly marking the back surface of the semiconductor device 3 with a laser, the marking member on the back surface of the semiconductor device 3 is marked. In addition, the circuit and the like formed on the surface of the semiconductor element are not destroyed, and the characteristics are not adversely affected, and the semiconductor element 3 is not broken or the like. Further, the bonding between the aluminum plate 12 and the back surface of the semiconductor element 3 is performed by the heat radiation grease 13.
By combining with an aluminum plate, the heat generated from the semiconductor element 3 can be efficiently conducted to the aluminum plate 12 to dissipate heat, and the heat dissipation as a semiconductor device can be improved.

In the method of manufacturing a semiconductor device according to the present invention, the two-stage projecting electrode A is formed on the electrode pad 1 on the semiconductor element 3.
a step of forming a u bump 2, a step of supplying a conductive adhesive 6 to the Au bump 2, a semiconductor carrier having a bump connection electrode 5 on a first surface and an external electrode terminal 8 on a second surface Bonding the bump connecting electrode 5 on the semiconductor carrier 4 and the Au bump 2 on the semiconductor element 3 via the conductive adhesive 6 with respect to the semiconductor carrier 4 and the gap between the semiconductor element 3 and the semiconductor carrier 4 A semiconductor device structure is formed by a process of injecting a sealing resin 7 into a mold and curing and sealing the resin, and then the semiconductor device structure is face-down with respect to a case where heat radiation grease is formed on an aluminum plate. Bonding, forming a marking member on the back surface of the semiconductor element 3,
This is a method of manufacturing a semiconductor device that performs marking on the marking member, which prevents a semiconductor element 3 from being subjected to an impact at the time of laser marking, destroys a circuit formed on the surface of the semiconductor element, It does not adversely affect the characteristics or cause breakage such as cracks in the semiconductor element 3.

[0038]

According to the semiconductor device of the present invention, a marking member such as an aluminum plate is formed on the back surface of a semiconductor element, and a mark is formed on the marking member.
Circuits and the like formed on the surface of the semiconductor element are not destroyed and adversely affect characteristics, and damage to the semiconductor element such as cracks does not occur. In addition, the bonding between the marking member and the back surface of the semiconductor element is performed by bonding with heat radiation grease, and in combination with the marking member made of an aluminum plate, heat generated from the semiconductor element can be efficiently transmitted to the marking member and radiated. It is also possible to improve heat dissipation as a semiconductor device.

Further, according to the method of manufacturing a semiconductor device of the present invention, after forming a semiconductor device structure, the semiconductor device structure is bonded to an aluminum plate on which heat radiation grease is formed by a face-down method, Since the marking member is formed on the back surface of the semiconductor element and the marking is performed on the marking member, the marking member can be easily and accurately formed on the back surface of the semiconductor element. For the semiconductor element, the impact at the time of laser marking is prevented, the circuit formed on the surface of the semiconductor element is destroyed, adversely affecting the characteristics, and the semiconductor element is cracked or the like. You will not have to.

[Brief description of the drawings]

FIG. 1 is a plan view of an example of an embodiment of a semiconductor device of the present invention.

FIG. 2 is a bottom view of an example of an embodiment of a semiconductor device of the present invention;

FIG. 3 is a sectional view of an example of an embodiment of a semiconductor device of the present invention;

FIG. 4 is a process sectional view of an example of an embodiment in a method for manufacturing a semiconductor device of the present invention;

FIG. 5 is a process sectional view of an example of an embodiment in a method for manufacturing a semiconductor device of the present invention;

FIG. 6 is a process sectional view of an example of an embodiment in a method for manufacturing a semiconductor device of the present invention;

FIG. 7 is a process sectional view of an example of an embodiment in a method for manufacturing a semiconductor device of the present invention.

FIG. 8 is a process sectional view of an example of an embodiment in a method for manufacturing a semiconductor device of the present invention.

FIG. 9 is a process sectional view of an example of an embodiment in a method for manufacturing a semiconductor device of the present invention;

FIG. 10 is a process sectional view of an example of an embodiment of a method for manufacturing a semiconductor device of the present invention;

FIG. 11 is a process sectional view of an example of an embodiment in a method for manufacturing a semiconductor device of the present invention;

FIG. 12 is a plan view of a conventional semiconductor device.

FIG. 13 is a bottom view of a conventional semiconductor device.

FIG. 14 is a sectional view of a conventional semiconductor device.

FIG. 15 is a process sectional view of a conventional semiconductor device manufacturing method.

FIG. 16 is a process sectional view of a conventional semiconductor device manufacturing method.

FIG. 17 is a process sectional view of a conventional semiconductor device manufacturing method.

FIG. 18 is a process sectional view of a conventional semiconductor device manufacturing method.

FIG. 19 is a process sectional view of a conventional semiconductor device manufacturing method.

FIG. 20 is a process sectional view of a conventional semiconductor device manufacturing method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electrode pad 2 Au bump 3 Semiconductor element 4 Semiconductor carrier 5 Electrode 6 Conductive adhesive 7 Sealing resin 8 External electrode terminal 9 Mark 10 Au wire 11 Capillary 12 Aluminum plate 13 Radiation grease 14 Semiconductor device structure 15 Aluminum wide plate 16 Base

Claims (7)

(57) [Claims] 1. A semiconductor carrier comprising an insulating substrate having a plurality of electrodes on an upper surface and external electrode terminals arranged on a bottom surface, a semiconductor element joined to the upper surface of the semiconductor carrier, and an electrode on the semiconductor element. A plurality of bump electrodes provided on a pad and connecting the semiconductor element and a plurality of electrodes on the semiconductor carrier, and connecting a plurality of electrodes and a bump electrode on the upper surface of the semiconductor carrier, within the electrode pad region. A conductive adhesive provided only around the bump electrode, a resin filling and covering the gap between the semiconductor element and the semiconductor carrier and the peripheral edge of the semiconductor element, and on the back surface of the semiconductor element. A semiconductor device comprising: a marking member provided via an adhesive; and a mark formed on the marking member. 2. A semiconductor carrier comprising an insulating substrate having a plurality of electrodes on an upper surface and external electrode terminals arranged on a bottom surface, a semiconductor element joined to the upper surface of the semiconductor carrier, and an electrode on the semiconductor element. A plurality of two-stage bump electrodes provided on a pad and connecting the semiconductor element and a plurality of electrodes on the semiconductor carrier; and a plurality of conductive adhesives connecting the plurality of electrodes on the top surface of the semiconductor carrier and the two-stage bump electrode. And a resin that fills and covers the gap between the semiconductor element and the semiconductor carrier and the peripheral edge of the semiconductor element, and a marking member provided on the back surface of the semiconductor element via an adhesive. A semiconductor device, wherein a mark by a laser marker is formed on a surface of the marking member. 3. The semiconductor device according to claim 1, wherein the marking member is made of a material that can be marked by a laser marker and has a high thermal conductivity. 4. The semiconductor device according to claim 1, wherein the marking member is an aluminum plate. 5. A step of forming a bump electrode on an electrode pad on a semiconductor element, a step of forming a conductive adhesive only on the bump electrode formed on the semiconductor element by a transfer method, and a step of forming a bump on the first surface. A bump connection electrode on the semiconductor carrier and a bump electrode on the semiconductor element are bonded to the semiconductor carrier having a connection electrode and an external electrode terminal on the second surface via the conductive adhesive. A step of thermally curing the conductive adhesive, a step of injecting a sealing resin into a gap between a semiconductor element and a semiconductor carrier, and curing and sealing the resin to form a semiconductor device component; A method for manufacturing a semiconductor device, comprising: a step of providing a marking member on a back surface of a semiconductor element of a device structure; and a step of forming a mark on the surface of the marking member. 6. A step of forming a bump electrode on an electrode pad on a semiconductor element, a step of forming a conductive adhesive only on the bump electrode formed on the semiconductor element by a transfer method, and a step of forming a bump on a first surface. A bump connection electrode on the semiconductor carrier and a bump electrode on the semiconductor element are bonded to the semiconductor carrier having a connection electrode and an external electrode terminal on the second surface via the conductive adhesive. A step of thermally curing the conductive adhesive, a step of injecting a sealing resin into a gap between a semiconductor element and a semiconductor carrier, and curing and sealing the resin to form a semiconductor device component; A step of bonding an aluminum plate to the back surface of the semiconductor element of the device structure with heat radiation grease; and a step of forming a mark on the surface of the aluminum plate with a laser marker. Manufacturing method of a semiconductor device. 7. The step of bonding an aluminum plate to the back surface of a semiconductor element of a semiconductor device structure with heat radiation grease is performed by uniformly applying heat radiation grease on an aluminum plate to the semiconductor device structure of the semiconductor device structure. 7. The method for manufacturing a semiconductor device according to claim 6, further comprising the step of joining the back surface of the element face down.