TW201831885A - 原位控制製程的方法及設備 - Google Patents

原位控制製程的方法及設備 Download PDF

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Publication number
TW201831885A
TW201831885A TW107120615A TW107120615A TW201831885A TW 201831885 A TW201831885 A TW 201831885A TW 107120615 A TW107120615 A TW 107120615A TW 107120615 A TW107120615 A TW 107120615A TW 201831885 A TW201831885 A TW 201831885A
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TW
Taiwan
Prior art keywords
data
parameters
sequence
parameter
processing
Prior art date
Application number
TW107120615A
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English (en)
Chinese (zh)
Inventor
托羅維絲伊格
波滋竇格可爾奈爾
艾爾雅西達瑞爾
Original Assignee
以色列商諾發測量儀器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 以色列商諾發測量儀器股份有限公司 filed Critical 以色列商諾發測量儀器股份有限公司
Publication of TW201831885A publication Critical patent/TW201831885A/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G01N21/8903—Optical details; Scanning details using a multiple detector array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Textile Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
TW107120615A 2012-08-15 2013-08-15 原位控制製程的方法及設備 TW201831885A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261683215P 2012-08-15 2012-08-15
US61/683,215 2012-08-15

Publications (1)

Publication Number Publication Date
TW201831885A true TW201831885A (zh) 2018-09-01

Family

ID=50685435

Family Applications (3)

Application Number Title Priority Date Filing Date
TW107120615A TW201831885A (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW102129310A TWI600895B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW106123287A TWI635269B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW102129310A TWI600895B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW106123287A TWI635269B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備

Country Status (7)

Country Link
US (3) US9528946B2 (enExample)
EP (1) EP2890951A4 (enExample)
JP (1) JP6336982B2 (enExample)
KR (1) KR102205682B1 (enExample)
CN (1) CN104583712B (enExample)
TW (3) TW201831885A (enExample)
WO (1) WO2014027354A1 (enExample)

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TWI863630B (zh) * 2015-12-15 2024-11-21 以色列商諾威股份有限公司 用於測量圖案化半導體結構之特性的系統
US9792393B2 (en) * 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US11107738B2 (en) * 2016-11-16 2021-08-31 Nova Ltd. Layer detection for high aspect ratio etch control
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
WO2019200015A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Optical metrology in machine learning to characterize features
KR102812035B1 (ko) 2018-04-10 2025-05-22 램 리써치 코포레이션 레지스트 및 에칭 모델링
JP7020392B2 (ja) * 2018-12-25 2022-02-16 東芝三菱電機産業システム株式会社 データ収集再生システム
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
JP7220573B2 (ja) * 2019-01-24 2023-02-10 株式会社荏原製作所 情報処理システム、情報処理方法、プログラム及び基板処理装置
US12387134B2 (en) 2019-02-14 2025-08-12 Lam Research Corporation Data capture and transformation to support data analysis and machine learning for substrate manufacturing systems
IL294547B2 (en) * 2020-01-06 2023-07-01 Nova Ltd Self-supervised representational learning for interpreting ocd data
US12038271B2 (en) 2020-01-07 2024-07-16 Nova Ltd Detecting outliers and anomalies for OCD metrology machine learning
US11698628B2 (en) 2020-03-16 2023-07-11 Vitro Flat Glass Llc System, method, and computer program product for optimizing a manufacturing process
US11969854B2 (en) 2021-03-05 2024-04-30 Applied Materials, Inc. Control of processing parameters during substrate polishing using expected future parameter changes
US11619594B2 (en) 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
DE102022129114A1 (de) * 2021-11-05 2023-05-25 Jasco Corporation Spektrometer
JP2023113180A (ja) * 2022-02-03 2023-08-16 東京エレクトロン株式会社 データ算出方法及び基板処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
DE69426811T2 (de) 1993-12-30 2001-09-13 Guerbet, Villepinte Polyaminierte Liganden, Metallkomplexe, Verfahren zur Herstellung und diagnostische und therapeutische Verwendungen
US8531678B2 (en) * 1999-07-09 2013-09-10 Nova Measuring Instruments, Ltd. Method and system for measuring patterned structures
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
IL133326A0 (en) * 1999-12-06 2001-04-30 Nova Measuring Instr Ltd Method and system for endpoint detection
JP2004146782A (ja) * 2002-08-29 2004-05-20 Advanced Lcd Technologies Development Center Co Ltd 結晶化状態のｉｎ−ｓｉｔｕモニタリング方法
US6937337B2 (en) * 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
US7526354B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Managing and using metrology data for process and equipment control
KR20100131512A (ko) 2008-03-31 2010-12-15 비티 이미징 피티와이 리미티드 웨이퍼 이미징 및 처리하는 방법 및 장치

Also Published As

Publication number Publication date
US10197506B2 (en) 2019-02-05
TWI600895B (zh) 2017-10-01
CN104583712A (zh) 2015-04-29
TW201734434A (zh) 2017-10-01
US9915624B2 (en) 2018-03-13
EP2890951A1 (en) 2015-07-08
TW201415003A (zh) 2014-04-16
JP6336982B2 (ja) 2018-06-06
US20150226680A1 (en) 2015-08-13
WO2014027354A1 (en) 2014-02-20
KR102205682B1 (ko) 2021-01-21
US20170167987A1 (en) 2017-06-15
TWI635269B (zh) 2018-09-11
US20180195975A1 (en) 2018-07-12
CN104583712B (zh) 2017-12-01
KR20150043478A (ko) 2015-04-22
JP2015528569A (ja) 2015-09-28
EP2890951A4 (en) 2016-05-18
US9528946B2 (en) 2016-12-27

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