KR102205682B1 - 인-시추 측정을 위한 광학 계측 - Google Patents

인-시추 측정을 위한 광학 계측 Download PDF

Info

Publication number
KR102205682B1
KR102205682B1 KR1020157006613A KR20157006613A KR102205682B1 KR 102205682 B1 KR102205682 B1 KR 102205682B1 KR 1020157006613 A KR1020157006613 A KR 1020157006613A KR 20157006613 A KR20157006613 A KR 20157006613A KR 102205682 B1 KR102205682 B1 KR 102205682B1
Authority
KR
South Korea
Prior art keywords
data
sequence
parameters
measured data
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157006613A
Other languages
English (en)
Korean (ko)
Other versions
KR20150043478A (ko
Inventor
이고르 튜로베츠
코넬 보즈도그
다리오 엘리야시
Original Assignee
노바 메주어링 인스트루먼츠 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노바 메주어링 인스트루먼츠 엘티디. filed Critical 노바 메주어링 인스트루먼츠 엘티디.
Publication of KR20150043478A publication Critical patent/KR20150043478A/ko
Application granted granted Critical
Publication of KR102205682B1 publication Critical patent/KR102205682B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G01N21/8903—Optical details; Scanning details using a multiple detector array
    • H01L22/20—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
KR1020157006613A 2012-08-15 2013-08-15 인-시추 측정을 위한 광학 계측 Active KR102205682B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261683215P 2012-08-15 2012-08-15
US61/683,215 2012-08-15
PCT/IL2013/050697 WO2014027354A1 (en) 2012-08-15 2013-08-15 Optical metrology for in-situ measurements

Publications (2)

Publication Number Publication Date
KR20150043478A KR20150043478A (ko) 2015-04-22
KR102205682B1 true KR102205682B1 (ko) 2021-01-21

Family

ID=50685435

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157006613A Active KR102205682B1 (ko) 2012-08-15 2013-08-15 인-시추 측정을 위한 광학 계측

Country Status (7)

Country Link
US (3) US9528946B2 (enExample)
EP (1) EP2890951A4 (enExample)
JP (1) JP6336982B2 (enExample)
KR (1) KR102205682B1 (enExample)
CN (1) CN104583712B (enExample)
TW (3) TWI635269B (enExample)
WO (1) WO2014027354A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI823344B (zh) * 2015-12-15 2023-11-21 以色列商諾威股份有限公司 用於測量圖案化結構之特性的系統
US9792393B2 (en) * 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US11107738B2 (en) * 2016-11-16 2021-08-31 Nova Ltd. Layer detection for high aspect ratio etch control
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
CN112005347B (zh) 2018-04-10 2025-04-04 朗姆研究公司 抗蚀剂和蚀刻建模
CN111971551B (zh) 2018-04-10 2025-02-28 朗姆研究公司 机器学习中的光学计量以表征特征
JP7020392B2 (ja) * 2018-12-25 2022-02-16 東芝三菱電機産業システム株式会社 データ収集再生システム
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
JP7220573B2 (ja) * 2019-01-24 2023-02-10 株式会社荏原製作所 情報処理システム、情報処理方法、プログラム及び基板処理装置
KR102838452B1 (ko) * 2019-02-14 2025-07-24 램 리써치 코포레이션 기판 제작 시스템들을 위해 데이터 분석 및 머신 러닝을 지원하기 위한 데이터 캡처 및 변환
WO2021140508A1 (en) * 2020-01-06 2021-07-15 Nova Measuring Instruments Ltd. Self-supervised representation learning for interpretation of ocd data
CN114930154B (zh) * 2020-01-07 2023-08-01 诺威有限公司 检测ocd计量机器学习的离群值和异常
US11698628B2 (en) 2020-03-16 2023-07-11 Vitro Flat Glass Llc System, method, and computer program product for optimizing a manufacturing process
US11830779B2 (en) * 2020-08-12 2023-11-28 Applied Materials, Inc. In-situ etch material selectivity detection system
KR102757747B1 (ko) 2021-03-05 2025-01-21 어플라이드 머티어리얼스, 인코포레이티드 기판 연마 동안 비용 함수 또는 예상되는 장래 파라미터 변경들을 사용한 처리 파라미터들의 제어
US11619594B2 (en) 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
DE102022129114A1 (de) * 2021-11-05 2023-05-25 Jasco Corporation Spektrometer
JP7870627B2 (ja) * 2022-02-03 2026-06-05 東京エレクトロン株式会社 データ算出方法及び基板処理装置
TWI924300B (zh) * 2023-12-22 2026-05-01 美商梅瑞堤儀器公司 用於控制光學儀器之解析度及產量之機制及其使用方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010003084A1 (en) 1999-12-06 2001-06-07 Moshe Finarov Method and system for endpoint detection
US20080009081A1 (en) 2006-07-10 2008-01-10 Tokyo Electron Limited Managing and using metrology data for process and equipment control
US20120008147A1 (en) * 1999-07-09 2012-01-12 Nova Measuring Instruments Ltd. Of Weizmann Scientific Park Method and system for measuring patterned structures

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
ES2156143T3 (es) 1993-12-30 2001-06-16 Guerbet Sa Ligandos poliaminados, complejos metalicos, procedimiento de preparacion, aplicaciones diagnosticas y terapeuticas.
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
JP2004146782A (ja) * 2002-08-29 2004-05-20 Advanced Lcd Technologies Development Center Co Ltd 結晶化状態のｉｎ−ｓｉｔｕモニタリング方法
US6937337B2 (en) * 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
US9103792B2 (en) 2008-03-31 2015-08-11 Bt Imaging Pty Ltd. Wafer imaging and processing method and apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120008147A1 (en) * 1999-07-09 2012-01-12 Nova Measuring Instruments Ltd. Of Weizmann Scientific Park Method and system for measuring patterned structures
US20010003084A1 (en) 1999-12-06 2001-06-07 Moshe Finarov Method and system for endpoint detection
US20080009081A1 (en) 2006-07-10 2008-01-10 Tokyo Electron Limited Managing and using metrology data for process and equipment control

Also Published As

Publication number Publication date
US20180195975A1 (en) 2018-07-12
JP2015528569A (ja) 2015-09-28
JP6336982B2 (ja) 2018-06-06
CN104583712B (zh) 2017-12-01
EP2890951A1 (en) 2015-07-08
US20150226680A1 (en) 2015-08-13
TWI600895B (zh) 2017-10-01
TW201415003A (zh) 2014-04-16
KR20150043478A (ko) 2015-04-22
US20170167987A1 (en) 2017-06-15
TW201831885A (zh) 2018-09-01
CN104583712A (zh) 2015-04-29
US9528946B2 (en) 2016-12-27
EP2890951A4 (en) 2016-05-18
TW201734434A (zh) 2017-10-01
US10197506B2 (en) 2019-02-05
WO2014027354A1 (en) 2014-02-20
TWI635269B (zh) 2018-09-11
US9915624B2 (en) 2018-03-13

Similar Documents

Publication Publication Date Title
US10197506B2 (en) Optical metrology for in-situ measurements
EP2165178B1 (en) Method and system for use in monitoring properties of patterned structures
US10847430B2 (en) Method of feature exaction from time-series of spectra to control endpoint of process
US8193007B1 (en) Etch process control using optical metrology and sensor devices
US20240096713A1 (en) Machine-learning in multi-step semiconductor fabrication processes
US8173451B1 (en) Etch stage measurement system
TWI506240B (zh) 用於圖形化結構中之量測的方法及系統
WO2013169816A1 (en) Measurement model optimization based on parameter variations across a wafer
US20100048100A1 (en) Method and system for endpoint detection
JP2004528722A5 (enExample)
KR20180076592A (ko) 반도체 장치의 계측 방법
IL309690A (en) System and method for library construction and use in measurements on patterned structures
IL293633B1 (en) A system and method for building a library and using it in measurements on designed buildings
IL202492A (en) METHOD AND SYSTEM FOR USING TEST FEATURES OF SHAPED BUILDINGS

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000