JP6336982B2 - その場測定のための光計測 - Google Patents

その場測定のための光計測 Download PDF

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Publication number
JP6336982B2
JP6336982B2 JP2015527065A JP2015527065A JP6336982B2 JP 6336982 B2 JP6336982 B2 JP 6336982B2 JP 2015527065 A JP2015527065 A JP 2015527065A JP 2015527065 A JP2015527065 A JP 2015527065A JP 6336982 B2 JP6336982 B2 JP 6336982B2
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Japan
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data
parameters
processing
sequence
measurement
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JP2015527065A
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Japanese (ja)
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JP2015528569A (ja
JP2015528569A5 (enExample
Inventor
タロヴェッツ，イゴル
ボズドッグ，コーネル
エリアシィ，ダリオ
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Nova Ltd
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Nova Measuring Instruments Ltd
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Publication of JP2015528569A5 publication Critical patent/JP2015528569A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G01N21/8903—Optical details; Scanning details using a multiple detector array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2015527065A 2012-08-15 2013-08-15 その場測定のための光計測 Active JP6336982B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261683215P 2012-08-15 2012-08-15
US61/683,215 2012-08-15
PCT/IL2013/050697 WO2014027354A1 (en) 2012-08-15 2013-08-15 Optical metrology for in-situ measurements

Publications (3)

Publication Number Publication Date
JP2015528569A JP2015528569A (ja) 2015-09-28
JP2015528569A5 JP2015528569A5 (enExample) 2016-10-27
JP6336982B2 true JP6336982B2 (ja) 2018-06-06

Family

ID=50685435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015527065A Active JP6336982B2 (ja) 2012-08-15 2013-08-15 その場測定のための光計測

Country Status (7)

Country Link
US (3) US9528946B2 (enExample)
EP (1) EP2890951A4 (enExample)
JP (1) JP6336982B2 (enExample)
KR (1) KR102205682B1 (enExample)
CN (1) CN104583712B (enExample)
TW (3) TWI635269B (enExample)
WO (1) WO2014027354A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI863630B (zh) * 2015-12-15 2024-11-21 以色列商諾威股份有限公司 用於測量圖案化半導體結構之特性的系統
US9792393B2 (en) * 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
WO2018092050A1 (en) * 2016-11-16 2018-05-24 Nova Measuring Instruments Ltd. Layer detection for high aspect ratio etch control
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
CN111971551B (zh) 2018-04-10 2025-02-28 朗姆研究公司 机器学习中的光学计量以表征特征
WO2019199697A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Resist and etch modeling
JP7020392B2 (ja) * 2018-12-25 2022-02-16 東芝三菱電機産業システム株式会社 データ収集再生システム
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
JP7220573B2 (ja) 2019-01-24 2023-02-10 株式会社荏原製作所 情報処理システム、情報処理方法、プログラム及び基板処理装置
TWI865489B (zh) * 2019-02-14 2024-12-11 美商蘭姆研究公司 用以支援基板製造系統之資料分析及機器學習的資料擷取與轉換
IL294547B2 (en) * 2020-01-06 2023-07-01 Nova Ltd Self-supervised representational learning for interpreting ocd data
KR20220123303A (ko) 2020-01-07 2022-09-06 노바 엘티디. Ocd 계측 머신 학습에 대한 이상치 및 이상 검출 시스템 및 방법
US11698628B2 (en) * 2020-03-16 2023-07-11 Vitro Flat Glass Llc System, method, and computer program product for optimizing a manufacturing process
US12420373B2 (en) 2021-03-05 2025-09-23 Applied Materials, Inc. Control of processing parameters during substrate polishing using cost function
US11619594B2 (en) * 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
DE102022129114A1 (de) * 2021-11-05 2023-05-25 Jasco Corporation Spektrometer
JP2023113180A (ja) * 2022-02-03 2023-08-16 東京エレクトロン株式会社 データ算出方法及び基板処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
EP0661279B1 (fr) 1993-12-30 2001-03-07 Guerbet Ligands polyaminés, complexes métalliques, procédé de préparation, applications diagnostiques et thérapeutiques
US8531678B2 (en) * 1999-07-09 2013-09-10 Nova Measuring Instruments, Ltd. Method and system for measuring patterned structures
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
IL133326A0 (en) * 1999-12-06 2001-04-30 Nova Measuring Instr Ltd Method and system for endpoint detection
JP2004146782A (ja) * 2002-08-29 2004-05-20 Advanced Lcd Technologies Development Center Co Ltd 結晶化状態のｉｎ−ｓｉｔｕモニタリング方法
US6937337B2 (en) * 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
US7526354B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Managing and using metrology data for process and equipment control
KR20100131512A (ko) * 2008-03-31 2010-12-15 비티 이미징 피티와이 리미티드 웨이퍼 이미징 및 처리하는 방법 및 장치

Also Published As

Publication number Publication date
EP2890951A4 (en) 2016-05-18
US10197506B2 (en) 2019-02-05
TW201415003A (zh) 2014-04-16
WO2014027354A1 (en) 2014-02-20
JP2015528569A (ja) 2015-09-28
US20180195975A1 (en) 2018-07-12
US20150226680A1 (en) 2015-08-13
KR20150043478A (ko) 2015-04-22
TWI600895B (zh) 2017-10-01
CN104583712A (zh) 2015-04-29
EP2890951A1 (en) 2015-07-08
KR102205682B1 (ko) 2021-01-21
CN104583712B (zh) 2017-12-01
TW201831885A (zh) 2018-09-01
US9528946B2 (en) 2016-12-27
TW201734434A (zh) 2017-10-01
TWI635269B (zh) 2018-09-11
US20170167987A1 (en) 2017-06-15
US9915624B2 (en) 2018-03-13

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