TWI635269B - 原位控制製程的方法及設備 - Google Patents

原位控制製程的方法及設備 Download PDF

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Publication number
TWI635269B
TWI635269B TW106123287A TW106123287A TWI635269B TW I635269 B TWI635269 B TW I635269B TW 106123287 A TW106123287 A TW 106123287A TW 106123287 A TW106123287 A TW 106123287A TW I635269 B TWI635269 B TW I635269B
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TW
Taiwan
Prior art keywords
processing
parameters
data
controlling
step process
Prior art date
Application number
TW106123287A
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English (en)
Chinese (zh)
Other versions
TW201734434A (zh
Inventor
托羅維絲伊格
波滋竇格可爾奈爾
艾爾雅西達瑞爾
Original Assignee
以色列商諾發測量儀器股份有限公司
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Application filed by 以色列商諾發測量儀器股份有限公司 filed Critical 以色列商諾發測量儀器股份有限公司
Publication of TW201734434A publication Critical patent/TW201734434A/zh
Application granted granted Critical
Publication of TWI635269B publication Critical patent/TWI635269B/zh

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/89Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901Optical details; Scanning details
    • G01N21/8903Optical details; Scanning details using a multiple detector array
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/12Circuits of general importance; Signal processing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW106123287A 2012-08-15 2013-08-15 原位控制製程的方法及設備 TWI635269B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261683215P 2012-08-15 2012-08-15
US61/683,215 2012-08-15

Publications (2)

Publication Number Publication Date
TW201734434A TW201734434A (zh) 2017-10-01
TWI635269B true TWI635269B (zh) 2018-09-11

Family

ID=50685435

Family Applications (3)

Application Number Title Priority Date Filing Date
TW106123287A TWI635269B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW102129310A TWI600895B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW107120615A TW201831885A (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW102129310A TWI600895B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW107120615A TW201831885A (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備

Country Status (7)

Country Link
US (3) US9528946B2 (enExample)
EP (1) EP2890951A4 (enExample)
JP (1) JP6336982B2 (enExample)
KR (1) KR102205682B1 (enExample)
CN (1) CN104583712B (enExample)
TW (3) TWI635269B (enExample)
WO (1) WO2014027354A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI863630B (zh) * 2015-12-15 2024-11-21 以色列商諾威股份有限公司 用於測量圖案化半導體結構之特性的系統
US9792393B2 (en) * 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
WO2018092050A1 (en) * 2016-11-16 2018-05-24 Nova Measuring Instruments Ltd. Layer detection for high aspect ratio etch control
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
CN111971551B (zh) 2018-04-10 2025-02-28 朗姆研究公司 机器学习中的光学计量以表征特征
WO2019199697A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Resist and etch modeling
JP7020392B2 (ja) * 2018-12-25 2022-02-16 東芝三菱電機産業システム株式会社 データ収集再生システム
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
JP7220573B2 (ja) 2019-01-24 2023-02-10 株式会社荏原製作所 情報処理システム、情報処理方法、プログラム及び基板処理装置
TWI865489B (zh) * 2019-02-14 2024-12-11 美商蘭姆研究公司 用以支援基板製造系統之資料分析及機器學習的資料擷取與轉換
IL294547B2 (en) * 2020-01-06 2023-07-01 Nova Ltd Self-supervised representational learning for interpreting ocd data
KR20220123303A (ko) 2020-01-07 2022-09-06 노바 엘티디. Ocd 계측 머신 학습에 대한 이상치 및 이상 검출 시스템 및 방법
US11698628B2 (en) * 2020-03-16 2023-07-11 Vitro Flat Glass Llc System, method, and computer program product for optimizing a manufacturing process
US12420373B2 (en) 2021-03-05 2025-09-23 Applied Materials, Inc. Control of processing parameters during substrate polishing using cost function
US11619594B2 (en) * 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
DE102022129114A1 (de) * 2021-11-05 2023-05-25 Jasco Corporation Spektrometer
JP2023113180A (ja) * 2022-02-03 2023-08-16 東京エレクトロン株式会社 データ算出方法及び基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080009081A1 (en) * 2006-07-10 2008-01-10 Tokyo Electron Limited Managing and using metrology data for process and equipment control
TW201000887A (en) * 2008-03-31 2010-01-01 Bt Imaging Pty Ltd Wafer imaging and processing method and apparatus
US20120008147A1 (en) * 1999-07-09 2012-01-12 Nova Measuring Instruments Ltd. Of Weizmann Scientific Park Method and system for measuring patterned structures

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
EP0661279B1 (fr) 1993-12-30 2001-03-07 Guerbet Ligands polyaminés, complexes métalliques, procédé de préparation, applications diagnostiques et thérapeutiques
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
IL133326A0 (en) * 1999-12-06 2001-04-30 Nova Measuring Instr Ltd Method and system for endpoint detection
JP2004146782A (ja) * 2002-08-29 2004-05-20 Advanced Lcd Technologies Development Center Co Ltd 結晶化状態のin−situモニタリング方法
US6937337B2 (en) * 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120008147A1 (en) * 1999-07-09 2012-01-12 Nova Measuring Instruments Ltd. Of Weizmann Scientific Park Method and system for measuring patterned structures
US20080009081A1 (en) * 2006-07-10 2008-01-10 Tokyo Electron Limited Managing and using metrology data for process and equipment control
TW201000887A (en) * 2008-03-31 2010-01-01 Bt Imaging Pty Ltd Wafer imaging and processing method and apparatus

Also Published As

Publication number Publication date
EP2890951A4 (en) 2016-05-18
US10197506B2 (en) 2019-02-05
JP6336982B2 (ja) 2018-06-06
TW201415003A (zh) 2014-04-16
WO2014027354A1 (en) 2014-02-20
JP2015528569A (ja) 2015-09-28
US20180195975A1 (en) 2018-07-12
US20150226680A1 (en) 2015-08-13
KR20150043478A (ko) 2015-04-22
TWI600895B (zh) 2017-10-01
CN104583712A (zh) 2015-04-29
EP2890951A1 (en) 2015-07-08
KR102205682B1 (ko) 2021-01-21
CN104583712B (zh) 2017-12-01
TW201831885A (zh) 2018-09-01
US9528946B2 (en) 2016-12-27
TW201734434A (zh) 2017-10-01
US20170167987A1 (en) 2017-06-15
US9915624B2 (en) 2018-03-13

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