TWI635269B - 原位控制製程的方法及設備 - Google Patents

原位控制製程的方法及設備 Download PDF

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Publication number
TWI635269B
TWI635269B TW106123287A TW106123287A TWI635269B TW I635269 B TWI635269 B TW I635269B TW 106123287 A TW106123287 A TW 106123287A TW 106123287 A TW106123287 A TW 106123287A TW I635269 B TWI635269 B TW I635269B
Authority
TW
Taiwan
Prior art keywords
processing
parameters
data
controlling
step process
Prior art date
Application number
TW106123287A
Other languages
English (en)
Chinese (zh)
Other versions
TW201734434A (zh
Inventor
Igor Turovets
托羅維絲伊格
Cornel Bozdog
波滋竇格可爾奈爾
Dario Elyasi
艾爾雅西達瑞爾
Original Assignee
Nova Measuring Instruments Ltd.
以色列商諾發測量儀器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nova Measuring Instruments Ltd., 以色列商諾發測量儀器股份有限公司 filed Critical Nova Measuring Instruments Ltd.
Publication of TW201734434A publication Critical patent/TW201734434A/zh
Application granted granted Critical
Publication of TWI635269B publication Critical patent/TWI635269B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G01N21/8903—Optical details; Scanning details using a multiple detector array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Textile Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
TW106123287A 2012-08-15 2013-08-15 原位控制製程的方法及設備 TWI635269B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261683215P 2012-08-15 2012-08-15
US61/683,215 2012-08-15

Publications (2)

Publication Number Publication Date
TW201734434A TW201734434A (zh) 2017-10-01
TWI635269B true TWI635269B (zh) 2018-09-11

Family

ID=50685435

Family Applications (3)

Application Number Title Priority Date Filing Date
TW106123287A TWI635269B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW107120615A TW201831885A (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW102129310A TWI600895B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW107120615A TW201831885A (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備
TW102129310A TWI600895B (zh) 2012-08-15 2013-08-15 原位控制製程的方法及設備

Country Status (7)

Country Link
US (3) US9528946B2 (enExample)
EP (1) EP2890951A4 (enExample)
JP (1) JP6336982B2 (enExample)
KR (1) KR102205682B1 (enExample)
CN (1) CN104583712B (enExample)
TW (3) TWI635269B (enExample)
WO (1) WO2014027354A1 (enExample)

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TWI823344B (zh) * 2015-12-15 2023-11-21 以色列商諾威股份有限公司 用於測量圖案化結構之特性的系統
US9792393B2 (en) * 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
WO2018092050A1 (en) * 2016-11-16 2018-05-24 Nova Measuring Instruments Ltd. Layer detection for high aspect ratio etch control
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
KR102708927B1 (ko) 2018-04-10 2024-09-23 램 리써치 코포레이션 피처들을 특징화하기 위한 머신 러닝의 광학 계측
KR102812035B1 (ko) 2018-04-10 2025-05-22 램 리써치 코포레이션 레지스트 및 에칭 모델링
JP7020392B2 (ja) * 2018-12-25 2022-02-16 東芝三菱電機産業システム株式会社 データ収集再生システム
US11989492B2 (en) 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
JP7220573B2 (ja) * 2019-01-24 2023-02-10 株式会社荏原製作所 情報処理システム、情報処理方法、プログラム及び基板処理装置
WO2020167720A1 (en) 2019-02-14 2020-08-20 Lam Research Corporation Data capture and transformation to support data analysis and machine learning for substrate manufacturing systems
US11747740B2 (en) * 2020-01-06 2023-09-05 Nova Ltd Self-supervised representation learning for interpretation of OCD data
CN116880134A (zh) 2020-01-07 2023-10-13 诺威有限公司 用于ocd计量的方法
US11698628B2 (en) * 2020-03-16 2023-07-11 Vitro Flat Glass Llc System, method, and computer program product for optimizing a manufacturing process
EP4301549A4 (en) 2021-03-05 2025-02-26 Applied Materials, Inc. CONTROLLING PROCESSING PARAMETERS DURING POLISHING OF A SUBSTRATE USING A COST FUNCTION OR EXPECTED FUTURE PARAMETER CHANGES
US11619594B2 (en) * 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
DE102022129114A1 (de) * 2021-11-05 2023-05-25 Jasco Corporation Spektrometer
JP2023113180A (ja) * 2022-02-03 2023-08-16 東京エレクトロン株式会社 データ算出方法及び基板処理装置

Citations (3)

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US20080009081A1 (en) * 2006-07-10 2008-01-10 Tokyo Electron Limited Managing and using metrology data for process and equipment control
TW201000887A (en) * 2008-03-31 2010-01-01 Bt Imaging Pty Ltd Wafer imaging and processing method and apparatus
US20120008147A1 (en) * 1999-07-09 2012-01-12 Nova Measuring Instruments Ltd. Of Weizmann Scientific Park Method and system for measuring patterned structures

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US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
ES2156143T3 (es) 1993-12-30 2001-06-16 Guerbet Sa Ligandos poliaminados, complejos metalicos, procedimiento de preparacion, aplicaciones diagnosticas y terapeuticas.
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
IL133326A0 (en) 1999-12-06 2001-04-30 Nova Measuring Instr Ltd Method and system for endpoint detection
JP2004146782A (ja) * 2002-08-29 2004-05-20 Advanced Lcd Technologies Development Center Co Ltd 結晶化状態のｉｎ−ｓｉｔｕモニタリング方法
US6937337B2 (en) * 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120008147A1 (en) * 1999-07-09 2012-01-12 Nova Measuring Instruments Ltd. Of Weizmann Scientific Park Method and system for measuring patterned structures
US20080009081A1 (en) * 2006-07-10 2008-01-10 Tokyo Electron Limited Managing and using metrology data for process and equipment control
TW201000887A (en) * 2008-03-31 2010-01-01 Bt Imaging Pty Ltd Wafer imaging and processing method and apparatus

Also Published As

Publication number Publication date
TW201415003A (zh) 2014-04-16
WO2014027354A1 (en) 2014-02-20
JP2015528569A (ja) 2015-09-28
US20150226680A1 (en) 2015-08-13
US20180195975A1 (en) 2018-07-12
US9915624B2 (en) 2018-03-13
TW201734434A (zh) 2017-10-01
US10197506B2 (en) 2019-02-05
TW201831885A (zh) 2018-09-01
CN104583712B (zh) 2017-12-01
EP2890951A1 (en) 2015-07-08
US9528946B2 (en) 2016-12-27
US20170167987A1 (en) 2017-06-15
KR102205682B1 (ko) 2021-01-21
JP6336982B2 (ja) 2018-06-06
KR20150043478A (ko) 2015-04-22
EP2890951A4 (en) 2016-05-18
TWI600895B (zh) 2017-10-01
CN104583712A (zh) 2015-04-29

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