TW201830627A - Lead frame member and method for manufacturing same, and semiconductor package - Google Patents

Lead frame member and method for manufacturing same, and semiconductor package Download PDF

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TW201830627A
TW201830627A TW106145512A TW106145512A TW201830627A TW 201830627 A TW201830627 A TW 201830627A TW 106145512 A TW106145512 A TW 106145512A TW 106145512 A TW106145512 A TW 106145512A TW 201830627 A TW201830627 A TW 201830627A
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alloy
roughened
lead frame
layer
film
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TWI762546B (en
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中津川達也
小林良聡
橋本真
柴田邦夫
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日商古河電氣工業股份有限公司
日商古河精密金屬工業股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582Metallic layers on lead frames
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

A lead frame member (10) is provided with an electrically conductive substrate (1) and a roughened film (3) which includes at least one roughened layer (2) formed of a plurality of roughened particle projections (4) on at least one side of the electrically conductive substrate (1), either directly or with an intermediate layer interposed therebetween. The projections (4) have a shape such that a maximum width measured at a thickness-direction cross section of the roughened film (3) is 1 to 5 times a minimum width measured at a lower portion positioned on the electrically conductive substrate (1) side below the position at which the maximum width is measured.

Description

導線架材料及其製造方法以及半導體封裝體    Lead frame material, manufacturing method thereof, and semiconductor package   

本發明係關於導線架材料及其製造方法以及半導體封裝體,其中半導體元件與具有表面處理層的導線架互相電性連接,適合用於將該等利用鑄造樹脂密封而成的樹脂密封型半導體裝置。 The present invention relates to a lead frame material, a method for manufacturing the same, and a semiconductor package. The semiconductor element and the lead frame having a surface treatment layer are electrically connected to each other. .

此種樹脂密封型半導體裝置,具有將藉由導線等相互電性連接的半導體元件與導線架以鑄造樹脂密封的構造。如此的樹脂密封型半導體裝置,一般係對導線架,進行如外裝鍍覆等的表面處理,例如以Sn-Pb合金或Sn-Bi合金等的Sn合金形成表面皮膜而製造。 Such a resin-sealed semiconductor device has a structure in which a semiconductor element and a lead frame electrically connected to each other by a lead or the like are sealed with a cast resin. Such a resin-sealed semiconductor device is generally manufactured by subjecting a lead frame to surface treatment such as exterior plating, for example, forming a surface film with an Sn alloy such as an Sn-Pb alloy or an Sn-Bi alloy.

在此,近年來,為簡化組裝步驟及降低成本,開始採用預先對導線架的表面,依照對印刷電路板的焊錫等的構裝,進行提升與焊錫的潤濕性等的規格的鍍覆(例如Ni/Pd/Au)之導線架(Pre-Plated Frame)(例如,參照專利文獻1)。 Here, in recent years, in order to simplify the assembly steps and reduce costs, plating on the surface of the lead frame in advance has been performed in accordance with specifications such as soldering of printed circuit boards to improve solder wettability and other specifications ( For example, a lead frame (Pre-Plated Frame) of Ni / Pd / Au (for example, refer to Patent Document 1).

此外,在另一方面,為提升在樹脂密封型半導體裝置的導線架與鑄造樹脂的密著性,有將導線架的鍍覆表面粗化的技術的提案(例如參照,專利文獻2)。 On the other hand, in order to improve the adhesion between the lead frame of the resin-sealed semiconductor device and the cast resin, a technique for roughening the plating surface of the lead frame has been proposed (for example, refer to Patent Document 2).

粗化鍍覆表面的技術,係藉由對導線架施以粗化鍍覆,並將表面粗化,期待(1)鑄造樹脂進入被粗化的鍍覆皮膜 的凹凸並形成堅固的機械性接合的效果(錨定效果)、(2)藉由提升鑄造樹脂與鍍覆表面的接觸面積而提升化學性接合等。 The technology of roughening the plating surface is to roughen the lead frame by roughening the surface of the lead frame. It is expected that (1) the casting resin will enter the unevenness of the roughened plating film and form a strong mechanical joint. Effect (anchoring effect), (2) chemical bonding by improving the contact area between the casting resin and the plating surface.

藉由粗化導線架的表面,提升鑄造樹脂對導線架的密著性,抑制導線架與鑄造樹脂之間的剝離之結果,可提升樹脂密封型半導體裝置的可靠度。 By roughening the surface of the lead frame, improving the adhesion of the cast resin to the lead frame, and suppressing the peeling between the lead frame and the cast resin, the reliability of the resin-sealed semiconductor device can be improved.

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開4-115558號公報 [Patent Document 1] Japanese Patent Laid-Open No. 4-115558

[專利文獻2]日本特開6-029439號公報 [Patent Document 2] Japanese Patent Laid-Open No. 6-029439

藉由粗化導線架的表面,相較於先前的樹脂密封型半導體裝置,確實可提升鑄造樹脂對導線架的密著性。但是,近年來,對可靠度的要求水準相較於以前變得更加嚴格,需要進行高溫高濕的耐久性試驗,例如:即使在溫度85℃、濕度85%的環境中,放置168小時的嚴酷條件下進行高溫高濕試驗時,亦必須通過可靠度的合格基準。另一方面,如專利文獻1,僅將導線架的表面粗化之先前的構成,有在樹脂與導線架之間發生空隙,而無法通過可靠度的合格基準的情形。這被認為係由於基於近年來多使用QFN(Quad Flat Non-Leaded Package)型及SOP(Small Outline Package)型等的封裝體作為樹脂密封型半導體裝置,而對樹脂對導線架的密著性的要求水準變得更高。如此,在樹脂密封型半導體裝置中,關於對導線架 的樹脂的密著性,要求即使在如上所述的嚴酷條件下,亦須維持良好的密著性,因而需要進一步改善。 By roughening the surface of the lead frame, it is possible to improve the adhesion of the cast resin to the lead frame compared to the previous resin-sealed semiconductor devices. However, in recent years, the requirements for reliability have become stricter than before, and high-temperature and high-humidity durability tests are required. For example, even in an environment with a temperature of 85 ° C and a humidity of 85%, it is severe for 168 hours. When the high temperature and high humidity test is performed under the conditions, the reliability standard must be passed. On the other hand, as in Patent Document 1, a conventional structure that only roughens the surface of the lead frame may cause a gap between the resin and the lead frame, and fail to pass the reliability standard. This is considered to be due to the recent use of packages such as QFN (Quad Flat Non-Leaded Package) and SOP (Small Outline Package) types as resin-sealed semiconductor devices. Requirement to become higher. As described above, in the resin-sealed semiconductor device, the adhesion to the lead frame resin is required to maintain good adhesion even under the severe conditions described above, and further improvement is required.

本發明的課題係提供一種適合的導線架材料及其製造方法以及具有高可靠度的半導體封裝體,其形成即使是特別在如上所述的嚴酷條件下進行高溫高濕試驗時,亦可維持良好的樹脂密著性的導線架表面。 An object of the present invention is to provide a suitable lead frame material, a method for manufacturing the same, and a semiconductor package having high reliability, and the formation thereof can be maintained well even when a high-temperature and high-humidity test is performed particularly under the severe conditions described above. Resin-adhesive leadframe surface.

本發明者們,為解決上述課題專心進行研究,認為構成形成在導電性基體上的粗化皮膜的粗化層之粗化粒子突起物的剖面形狀,可能大大地影響樹脂密著性,並調查關於因樹脂填充形成在起因於導線架材料的表面所形成的突起物之凹凸表面(特別是凹部)中所產生的,因所謂錨定效果所產生的良好密著性,是否在上述嚴酷條件下進行高溫高濕試驗時亦可維持。 The present inventors conducted intensive research in order to solve the above-mentioned problems, and considered that the cross-sectional shape of the roughened particle protrusions constituting the roughened layer of the roughened film formed on the conductive substrate may greatly affect the resin adhesion, and investigated Whether the good adhesion caused by the so-called anchoring effect generated by the resin filling on the uneven surface (especially the concave portion) of the protrusion formed by the surface of the lead frame material is under the severe conditions described above It can also be maintained during the high temperature and high humidity test.

然後,本發明者們得到以下見解:藉由將形成在導電性基體上所形成之粗化皮膜的粗化層之突起物,控制成具有以粗化皮膜的厚度方向剖面所測定時的最大寬幅,相對於比起最大寬幅的測定位置位在較靠導電性基體側的下側部分所測定時的最小寬幅,呈1~5倍的形狀,特別是在粗化粒子的突起物的最小寬幅之處,可有效地抑制因樹脂的膨脹或收縮等的應力集中而容易發生樹脂的剪斷的剝離現象。結果,發現可藉由粗化層最大限度地引出起因於錨定效果的良好密著性,並且,藉由將形成粗化層的突起物控制成上述形狀,即使進行先前所無法忍受的高溫高濕的耐久性試驗,例如在溫度85℃,濕 度85%的環境放置168小時之嚴酷條件下進行高溫高濕試驗時,亦可維持對導線架良好的樹脂密著性。 Then, the present inventors obtained the following insight: by controlling the protrusions of the roughened layer of the roughened film formed on the conductive substrate, the protrusions are controlled to have a maximum width when measured in a thickness direction cross section of the roughened film. The width is 1 to 5 times the smallest width when measured at the lower part of the conductive substrate than the measurement position of the maximum width, especially for the protrusions of roughened particles. At the smallest width, it is possible to effectively suppress the peeling of the resin easily due to stress concentration such as expansion or contraction of the resin. As a result, it was found that the good adhesion due to the anchoring effect can be maximized by the roughened layer, and by controlling the protrusions forming the roughened layer to the above-mentioned shape, even if the high temperature and the high temperature that were previously unbearable were increased, The wet durability test, for example, can also maintain good resin adhesion to the lead frame when the high-temperature and high-humidity test is performed under the severe conditions of 168 hours in an environment with a temperature of 85 ° C and a humidity of 85%.

即,本發明的要點構成係如下所示。 That is, the main points of the present invention are as follows.

(1)一種導線架材料,其具備:導電性基體;及粗化皮膜,其包含在該導電性基體的至少一面上,直接或經由中間層,以複數個粗化粒子的突起物所形成的至少一層粗化層, 上述突起物,具有以上述粗化皮膜的厚度方向的剖面所測定時的最大寬幅,相對於比起該最大寬幅的測定位置位在較靠上述導電性基體側的下側部分所測定時的最小寬幅,呈1~5倍的形狀。 (1) A lead frame material comprising: a conductive substrate; and a roughened film formed on at least one side of the conductive substrate, directly or via an intermediate layer, formed by a plurality of roughened particle protrusions. At least one roughened layer, the protrusion has a maximum width when measured in a cross-section of the thickness direction of the roughened film, and is located closer to the conductive substrate than the measurement position of the maximum width. The minimum width when measured at the lower part is 1 to 5 times.

(2)如上述(1)所述的導線架材料,其中上述導電性基體係銅、銅合金、鐵、鐵合金、鋁或鋁合金。 (2) The lead frame material according to the above (1), wherein the conductive base system is copper, copper alloy, iron, iron alloy, aluminum, or aluminum alloy.

(3)如上述(1)或(2)所述的導線架材料,其中上述粗化層,包含選自由銅、銅合金、鎳、鎳合金、鈀、鈀合金、銀、銀合金、錫、錫合金、鋅、鋅合金、銠、銠合金、釕、釕合金、銥及銥合金所組成之群組之金屬或合金。 (3) The lead frame material according to the above (1) or (2), wherein the roughened layer comprises a material selected from the group consisting of copper, copper alloy, nickel, nickel alloy, palladium, palladium alloy, silver, silver alloy, tin, A metal or alloy of the group consisting of tin alloy, zinc, zinc alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, iridium and iridium alloy.

(4)如上述(1)至(3)之任一項所述的導線架材料,其中在上述粗化皮膜的表面的至少一部分上,進一步具備包含至少1層表面披覆層的表面皮膜,上述表面披覆層,包含選自由鈀、鈀合金、銠、銠合金、釕、釕合金、鉑、鉑合金、銥、銥合金、金、金合金、銀及銀合金所組成之群組之金屬或合金。 (4) The lead frame material according to any one of (1) to (3) above, further comprising a surface film including at least one surface coating layer on at least a part of a surface of the roughened film, The surface coating layer includes a metal selected from the group consisting of palladium, palladium alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, gold alloy, silver, and silver alloy. Or alloy.

(5)如上述(4)所述的導線架材料,其中上述中間層係鎳、鎳合金、鈷、鈷合金、銅或銅合金。 (5) The lead frame material according to the above (4), wherein the intermediate layer is nickel, a nickel alloy, cobalt, a cobalt alloy, copper, or a copper alloy.

(6)一種導線架材料的製造方法,其包含形成粗化皮膜的 步驟,該粗化皮膜,包含在該導電性基體的至少一面上,直接或經由中間層,藉由電鍍以複數個粗化粒子的突起物所形成的至少一層粗化層,上述突起物,具有以上述粗化皮膜的厚度方向的剖面所測定時的最大寬幅,相對於比起該最大寬幅的測定位置位在較靠上述導電性基體側的下側部分所測定時的最小寬幅,呈1~5倍的形狀。 (6) A method for manufacturing a lead frame material, comprising the step of forming a roughened film, the roughened film being included on at least one side of the conductive substrate, directly or via an intermediate layer, and a plurality of roughenings by electroplating. At least one roughened layer formed by the protrusions of the particles, and the protrusions have a maximum width when measured by a cross section in the thickness direction of the roughened film, and are located at a position relatively larger than a measurement position of the maximum width. The minimum width when measured on the lower portion of the conductive substrate is 1 to 5 times.

(7)一種半導體封裝體,其具有:上述(1)至(5)之任一項所述的導線架材料。 (7) A semiconductor package comprising the lead frame material according to any one of (1) to (5) above.

本發明的導線架材料,具備:導電性基體;及粗化皮膜,其包含在該導電性基體的至少一面上,直接或經由中間層,以複數個粗化粒子的突起物所形成的至少一層粗化層,其中上述突起物,具有以上述粗化皮膜的厚度方向的剖面所測定時的最大寬幅,相對於比起最大寬幅的測定位置位在較靠導電性基體側的下側部分測定時的最小寬幅呈1~5倍的形狀。藉由上述,即使進行高溫高濕的耐久性試驗,例如在溫度85℃,濕度85%的環境放置168小時的嚴酷條件下進行高溫高濕試驗時,亦可維持對導線架之良好的樹脂密著性而幾乎不會惡化,使用該導線架材料所構成的半導體封裝體,可實現高度可靠性。 The lead frame material of the present invention includes: a conductive substrate; and a roughened film including at least one layer formed on a surface of the conductive substrate, directly or via an intermediate layer, with a plurality of roughened particle protrusions. The roughened layer, wherein the protrusion has a maximum width when measured in a cross-section of the thickness direction of the roughened film, and is located at a lower side of the conductive substrate than the measurement position of the maximum width. The minimum width during measurement is 1 to 5 times. Based on the above, even if a high temperature and high humidity durability test is performed, for example, a high temperature and high humidity test is performed under the severe conditions of 168 hours in an environment with a temperature of 85 ° C and a humidity of 85%, a good resin density for the lead frame can be maintained. The semiconductor package is made of the lead frame material, and the reliability is hardly deteriorated.

1‧‧‧導電性基體 1‧‧‧ conductive substrate

2‧‧‧粗化層 2‧‧‧ coarsening layer

2-1‧‧‧第1粗化層(從基材側的第1層粗化層) 2-1‧‧‧The first roughened layer (the first roughened layer from the substrate side)

2-2‧‧‧第2粗化層(從基材側的第2層粗化層) 2-2‧‧‧ 2nd roughened layer (2nd roughened layer from the substrate side)

3、3-1‧‧‧粗化皮膜 3.3-1‧‧‧roughened film

4、4-1‧‧‧突起物 4, 4-1‧‧‧ protrusion

10、10A‧‧‧導線架材料 10, 10A‧‧‧ lead frame material

A‧‧‧粗化皮膜的最表面的剖面線段長度 A‧‧‧ The length of the section line of the outermost surface of the roughened film

B‧‧‧導電性基體的表面的剖面線段長度 B‧‧‧ Section line length of the surface of the conductive substrate

圖1係依照本發明之代表性的導線架材料的概略剖面圖。 FIG. 1 is a schematic cross-sectional view of a representative lead frame material according to the present invention.

圖2係用於說明計算出粗化層的比表面積的方法的圖。 FIG. 2 is a diagram for explaining a method of calculating the specific surface area of the roughened layer.

圖3係用於說明構成1層粗化層的突起物的最大寬幅Wmax與最小寬幅Wmin的圖。 FIG. 3 is a diagram for explaining the maximum width Wmax and the minimum width Wmin of the protrusions constituting one roughened layer.

圖4係依照本發明之其他導線架材料的概略剖面圖。 FIG. 4 is a schematic cross-sectional view of another lead frame material according to the present invention.

圖5係用於說明構成2層粗化層的突起物的最大寬幅Wmax與最小寬幅Wmin的圖。 FIG. 5 is a diagram for explaining the maximum width Wmax and the minimum width Wmin of the protrusions constituting the two roughened layers.

接著,關於依照本發明的導線架材料,舉出具體的實施形態之例,一邊參照圖式一邊說明如下。圖1係表示依照本發明之代表性的導線架材料的概略剖面,圖1中的符號1係導電性基體,2係粗化層,3係粗化皮膜,4係突起物,然後10係導線架材料。本發明的導線架材料10,具備:導電性基體1;及粗化皮膜3,其包含至少1層的粗化層2。 Next, the lead frame material according to the present invention is exemplified by specific embodiments, and described below with reference to the drawings. FIG. 1 is a schematic cross-section of a representative lead frame material according to the present invention. Symbols in FIG. 1 are a conductive substrate, a 2 roughened layer, a 3 roughened film, a 4 protrusion, and a 10 lead.架 材料。 Frame material. The lead frame material 10 of the present invention includes a conductive substrate 1 and a roughened film 3 including at least one roughened layer 2.

(導電性基體) (Conductive substrate)

導電性基體1,只要是具有導電性的材料即可,可舉例如銅、銅合金、鐵、鐵合金、鋁或鋁合金等,以銅合金、鐵合金,或鋁合金為佳。在導線架材料中,由於需要可耐受與半導體元件接合時之彎曲加工等的變形之強度,故特別佳為使用導電率與強度的平衡良好的銅合金。其中,作為銅合金,可舉例如CDA(Copper Development Association)所刊載的合金的「C14410(Cu-0.15Sn,古河電氣工業公司製,商品名:EFTEC(註冊商標)-3)」、「C19400(Cu-Fe系合金材料,Cu-2.3Fe-0.03P-0.15Zn)」、「C18045(Cu-0.3Cr-0.25Sn-0.2Zn,古河電氣工業公司製,商品名:EFTEC(註冊商標)-64T)」、「C50710(Cu-2.0Sn-0.2Ni-0.05P),古河電氣工業公司製,商 品名:MF202」、「C70250(Cu-3Ni-0.65Si-0.15Mg),古河電氣工業公司製,商品名:EFTEC(註冊商標)-7025」等。再者,各元素之前所示之數字的單位均為「質量%」。使用如該等銅合金,較佳為使用以下銅合金的條材:抗拉強度為350~800N/mm2,以500~800N/mm2為佳,且導電率為30~90%IACS,以50~80%IACS為佳的。再者,上述「%IACS」,係以萬國標準軟銅(lnternational Annealed Copper Standard)的電阻率1.7241×10-8Ωm為100%IACS時所表示的導電率,例如「50%IACS」的導電率,係指萬國標準軟銅的導電率的50%。 The conductive substrate 1 may be any material having conductivity, and examples thereof include copper, copper alloys, iron, iron alloys, aluminum, and aluminum alloys. Copper alloys, iron alloys, or aluminum alloys are preferred. In the lead frame material, it is particularly desirable to use a copper alloy that has a good balance of conductivity and strength because it needs to have strength capable of withstanding deformation such as bending during bonding with a semiconductor element. Among them, as the copper alloy, for example, "C14410 (Cu-0.15Sn, manufactured by Furukawa Electric Corporation, trade name: EFTEC (registered trademark) -3)", "C19400 ( Cu-Fe-based alloy material, Cu-2.3Fe-0.03P-0.15Zn "," C18045 (Cu-0.3Cr-0.25Sn-0.2Zn, manufactured by Furukawa Electric Industries, Ltd., trade name: EFTEC (registered trademark) -64T ) "," C50710 (Cu-2.0Sn-0.2Ni-0.05P), manufactured by Furukawa Electric Industries, Ltd., trade name: MF202 "," C70250 (Cu-3Ni-0.65Si-0.15Mg), manufactured by Furukawa Electric Industries, Ltd., Trade name: EFTEC (registered trademark) -7025 "and so on. The unit of the number shown before each element is "mass%". For use of such copper alloys, it is preferable to use strips of the following copper alloys: the tensile strength is 350 ~ 800N / mm 2 , preferably 500 ~ 800N / mm 2 , and the conductivity is 30 ~ 90% IACS. 50 ~ 80% IACS is better. In addition, the above "% IACS" refers to the electrical conductivity expressed when the resistivity of International Annealed Copper Standard 1.7241 × 10 -8 Ωm is 100% IACS, for example, the conductivity of "50% IACS", Refers to 50% of the electrical conductivity of IWC Standard Soft Copper.

此外,鐵合金的情形,可舉例如:42合金(Fe-42質量%Ni)或不鏽鋼等。含有上述鐵合金的導電性基體1之導電率並不那麼高,可適用於導電率不是那麼被要求,且以傳達電氣訊號為目的的導線架材料10。 Examples of the iron alloy include 42 alloy (Fe-42% by mass Ni) and stainless steel. The conductivity of the conductive substrate 1 containing the above-mentioned iron alloy is not so high, and it can be applied to a lead frame material 10 whose conductivity is not so required and for the purpose of transmitting electrical signals.

再者,鋁合金的情形,可舉例如A5052等的Al-Mg系合金。 In the case of an aluminum alloy, an Al-Mg-based alloy such as A5052 may be mentioned.

樹脂密封型半導體裝置,因透過鑄造樹脂容易在內部積熱,故使內部的熱沿著導電性基體散熱變得很重要。在本發明中,藉由在導電性基體的表面上形成粗化皮膜,與沒有形成粗化皮膜的情形相比,可提升散熱效果,同時可將導電性基體薄板化到0.05mm。若導電性基體的厚度較0.05mm薄,則無法達成充分散熱,另一方面,若導電性基體的厚度在2mm以上,則無法達成半導體裝置的小型化。因此,導電性基體1的厚度,以0.05~2mm為佳,以0.1~1mm更佳。 Since a resin-sealed semiconductor device easily accumulates heat through a casting resin, it is important to dissipate heat inside the conductive substrate. In the present invention, by forming a roughened film on the surface of the conductive substrate, the heat dissipation effect can be improved compared with a case where no roughened film is formed, and at the same time, the conductive substrate can be thinned to 0.05 mm. If the thickness of the conductive substrate is thinner than 0.05 mm, sufficient heat dissipation cannot be achieved. On the other hand, if the thickness of the conductive substrate is 2 mm or more, miniaturization of the semiconductor device cannot be achieved. Therefore, the thickness of the conductive substrate 1 is preferably 0.05 to 2 mm, and more preferably 0.1 to 1 mm.

(粗化皮膜) (Roughened film)

粗化皮膜3,係在導電性基體1的至少一面上,直接或經由中間層(無圖示),以複數個粗化粒子的突起物4所形成之至少1層的粗化層2所構成。 The roughened film 3 is formed on at least one side of the conductive substrate 1 and directly or through an intermediate layer (not shown), and at least one roughened layer 2 formed by a plurality of roughened particle protrusions 4 is formed. .

此外,粗化皮膜3,只要以至少1層的粗化層2所構成即可,但考慮到製造步驟的繁瑣性等,以1~3層的粗化層2所構成為佳。粗化皮膜3的形成方法,在形成第1層的粗化層2-1之後,於第1層的粗化層2-1上積層形成組成或形成條件等的1個以上的因數與第1層的粗化層2-1不同之第2層的粗化層2-2,藉由所謂多重粗化形成,可以相對較薄的膜厚,有效地增大比表面積而成為較佳(參照圖4)。再者,在本發明中,粗化皮膜3的膜厚,並不是局部測定,而係至少藉由螢光X射線法(例如SII公司製的SFT9400(商品名)等的膜厚測定裝置),以準直器徑0.2mm以上測定任意3點時的平均膜厚表示。此外,粗化皮膜3係以複數個粗化層2所構成時,以全層的總厚度定義為粗化皮膜3的厚度。 In addition, the roughened film 3 may be constituted by at least one roughened layer 2. However, considering the complexity of the manufacturing steps and the like, the roughened layer 2 is preferably constituted by 1 to 3 layers. In the method for forming the roughened film 3, after the roughened layer 2-1 of the first layer is formed, one or more factors such as composition or formation conditions are laminated on the roughened layer 2-1 of the first layer and the first factor is formed. The roughened layer 2 of the second layer is different from the roughened layer 2-2 of the second layer, which is formed by so-called multiple roughening, which can be a relatively thin film thickness and effectively increase the specific surface area to become better (refer to the figure) 4). In the present invention, the film thickness of the roughened film 3 is not measured locally, but at least by a fluorescent X-ray method (for example, a film thickness measuring device such as SFT9400 (trade name) manufactured by SII), The average film thickness at the time of measuring any three points of the collimator diameter of 0.2 mm or more is shown. When the roughened film 3 is composed of a plurality of roughened layers 2, the total thickness of the entire layer is defined as the thickness of the roughened film 3.

此外,粗化皮膜3的膜厚並無特別限制,但膜厚越大,則因粗化所造成的凹凸有變大的傾向。因此,為使粗化形狀變大,粗化皮膜3的膜厚的下限值,以0.2μm以上為佳,以0.5μm以上為較佳,以0.8μm以上為更佳。另一方面,若粗化皮膜3的膜厚超過3μm,則有粗化皮膜3在搬送時脫落之所謂「掉粉」變多之虞。因此,粗化皮膜3的膜厚的上限值,以3μm以下為佳,以2μm以下為較佳,以1.5μm以下為更佳。 In addition, the film thickness of the roughened film 3 is not particularly limited, but the larger the film thickness, the larger the unevenness caused by the roughening tends to become large. Therefore, in order to make the roughened shape larger, the lower limit value of the thickness of the roughened film 3 is preferably 0.2 μm or more, more preferably 0.5 μm or more, and even more preferably 0.8 μm or more. On the other hand, if the thickness of the roughened film 3 exceeds 3 μm, there is a possibility that the so-called “powder dropping” that the roughened film 3 falls off during transportation may increase. Therefore, the upper limit of the thickness of the roughened film 3 is preferably 3 μm or less, more preferably 2 μm or less, and even more preferably 1.5 μm or less.

[粗化層] [Roughened layer]

粗化層2,係以複數個粗化粒子的突起物4所形成。 The roughened layer 2 is formed by a plurality of protrusions 4 of roughened particles.

粗化層2的形成方法,可舉例如濕式鍍覆或乾式鍍覆等各種方法,由能夠簡便且廉價地形成等的觀點來看,特別以藉由電鍍而形成為佳。 The method for forming the roughened layer 2 may be various methods such as wet plating and dry plating. From the viewpoint of being able to be easily and inexpensively formed, it is particularly preferable to form the layer by electroplating.

粗化層2,以包含例如,選自由銅、銅合金、鎳、鎳合金、鈀、鈀合金、銀、銀合金、錫、錫合金、鋅、鋅合金、銠、銠合金、釕、釕合金、銥及銥合金所組成之群組之金屬或合金為佳。粗化層2,特別是在粗化皮膜3上,進一步形成後述的表面皮膜(無圖示)時,由提升對表面皮膜的密著性的觀點來看,以含有銅、銅合金、鎳或鎳合金為較佳。可舉例以銅-錫合金、銅-鋅合金作為銅合金,以鎳-鋅合金、鎳-錫合金等作為鎳合金。 The roughened layer 2 includes, for example, a member selected from the group consisting of copper, copper alloy, nickel, nickel alloy, palladium, palladium alloy, silver, silver alloy, tin, tin alloy, zinc, zinc alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy Metals or alloys of the group consisting of iridium, iridium and iridium alloys are preferred. When the roughened layer 2 is formed on the roughened film 3 and a surface film (not shown) described later is further formed, from the viewpoint of improving the adhesion to the surface film, it contains copper, copper alloy, nickel, or Nickel alloys are preferred. For example, a copper-tin alloy, a copper-zinc alloy is used as the copper alloy, and a nickel-zinc alloy, a nickel-tin alloy, or the like is used as the nickel alloy.

然後,本發明的構成上的主要特徵,係意在使構成粗化層2之粗化粒子的突起物4的剖面形狀的最佳化,更具體而言,如圖3所示,將突起物4控制成具有在粗化皮膜3的厚度方向剖面所測定時的最大寬幅Wmax,相對於比起該最大寬幅Wmax的測定位置位在較靠導電性基體1側的下側部分所測定時的最小寬幅Wmin,呈1~5倍的形狀。 The main feature of the structure of the present invention is to optimize the cross-sectional shape of the protrusions 4 constituting the roughened particles of the roughened layer 2. More specifically, as shown in FIG. 3, the protrusions 4 is controlled so as to have a maximum width Wmax when measured in the thickness direction section of the roughened film 3, and when measured at a position on the lower side of the conductive substrate 1 side relative to the measurement position of the maximum width Wmax The minimum width Wmin is 1 to 5 times the shape.

此係,本發明者們專心研究的結果,假設粗化層以同一表面粗度形成,則樹脂在剪切試驗中的剪切強度(接合強度)較高,而可得良好的樹脂密著性,但在高溫高濕的耐久性試驗,例如在溫度85℃、濕度85%的環境放置168小時之嚴酷條件下進行高溫高濕試驗之後,發現在具有同一表面粗度的粗化層之中,存在剪切強度大幅降低,而無法維持良好的樹脂 密著性的情形。關於此點,進一步進行調查的結果,得到會大大地受到形成粗化層之粗化粒子的突起物的剖面形狀的影響之見解,發現特別是在突起物的最小寬幅之處,因樹脂的熱膨脹或收縮而造成之應力集中,會使密著性變低。 In this system, as a result of intensive research by the present inventors, assuming that the roughened layer is formed with the same surface roughness, the resin has a high shear strength (bonding strength) in a shear test, and good resin adhesion can be obtained. However, after a high-temperature and high-humidity durability test, for example, under high-temperature and high-humidity tests under the severe conditions of 168 hours in an environment with a temperature of 85 ° C and a humidity of 85%, it was found that among the roughened layers having the same surface roughness, There is a case where the shear strength is significantly reduced, and good resin adhesion cannot be maintained. Regarding this point, as a result of further investigation, it was found that the cross-sectional shape of the protrusions of the roughened particles forming the roughened layer was greatly affected. It was found that, particularly at the smallest width of the protrusions, the The stress concentration caused by thermal expansion or contraction will reduce the adhesion.

因此,本發明者們進一步詳細地研究,結果發現藉由使形成粗化皮膜的粗化層之粗化粒子的突起物的最大寬幅與最小寬幅的比例為1~5,亦即,將突起物控制成具有在粗化皮膜的厚度方向剖面所測定時的最大寬幅,相對於比起該最大寬幅的測定位置位在較靠導電性基體側的下側部分所測定時的最小寬幅,呈1~5倍的形狀,在具有相同程度的表面粗度的粗化層之中,即使在高溫高濕的耐久性試驗,例如在溫度85℃、濕度85%的環境放置168小時之嚴酷條件下進行高溫高濕試驗之後,樹脂的剪切強度(接合強度)幾乎不會降低,可維持良好的樹脂密著性。 Therefore, the present inventors conducted further detailed studies and found that the ratio of the maximum width to the minimum width of the protrusions of the roughened particles forming the roughened layer of the roughened film was 1 to 5, that is, The protrusions are controlled to have a maximum width when measured in a thickness direction cross section of the roughened film, and a minimum width when measured in a lower portion closer to the conductive substrate than the measurement position of the maximum width. It has a shape of 1 to 5 times. Among roughened layers with the same degree of surface roughness, even in high-temperature and high-humidity durability tests, such as 168 hours in an environment with a temperature of 85 ° C and a humidity of 85%. After the high-temperature and high-humidity test is performed under severe conditions, the resin's shear strength (bonding strength) is hardly reduced, and good resin adhesion can be maintained.

在突起物中,所謂最大寬幅為最小寬幅的1倍,係表示最大寬幅與最小寬幅相同,作為突起物的形狀,可舉例如大致上為圓柱狀或角柱狀的情形。另一方面,若突起物的最大寬幅超過最小寬幅的5倍,則由於在形成粗化層之突起物的最小寬幅之處,會增加因樹脂的膨脹或收縮所造成的應力集中,而無法有效地發揮錨定效果,進而容易在突起物的最小寬幅之處斷裂。因此,使突起物的最大寬幅成為最小寬幅的1~5倍。此外,不只是鑄造樹脂可發揮錨定效果,藉由使樹脂形成粗化層之突起物的最小部分之處不容易產生斷裂,不僅可對導線架材料提升剪切強度,在需要更加提升垂直方向的抗拉強度 時,使突起物的最大寬幅對最小寬幅的比例,以1.1~4.9倍為佳,以1.2~4.8倍為較佳,以1.5~4.0倍為更佳,以1.5~3.0倍最佳。再者,突起物之表面的形狀,可為尖銳亦可為圓滑,重要的是突起物的最大寬幅與最小寬幅的比。 In the protrusion, the so-called maximum width is twice the minimum width, which means that the maximum width is the same as the minimum width, and the shape of the protrusion may be, for example, a substantially cylindrical shape or an angular column shape. On the other hand, if the maximum width of the protrusion exceeds 5 times the minimum width, the stress concentration due to the expansion or contraction of the resin will increase at the minimum width of the protrusion forming the roughened layer. However, the anchoring effect cannot be effectively exerted, and it is easy to break at the smallest width of the protrusion. Therefore, the maximum width of the protrusion is made 1 to 5 times the minimum width. In addition, not only the casting resin can exert the anchoring effect, it is not easy to break at the smallest part of the protrusion of the resin to form a roughened layer, which can not only improve the shear strength of the lead frame material, but also enhance the vertical direction when needed In the case of tensile strength, the ratio of the maximum width to the minimum width of the protrusion is preferably 1.1 to 4.9 times, more preferably 1.2 to 4.8 times, more preferably 1.5 to 4.0 times, and 1.5 to 3.0. Times best. Furthermore, the shape of the surface of the protrusion may be sharp or smooth. What is important is the ratio of the maximum width to the minimum width of the protrusion.

<關於突起物的最大寬幅與與最小寬幅的定義> <Definition of maximum width and minimum width of protrusions>

在本發明中突起物的最大寬幅與最小寬幅,可例如藉由聚焦離子束(Focused Ion Beam,FIB)或機械研磨等的方法,將形成粗化層的導線架材料加工以製作垂直剖面試料,接著,對垂直剖面試料的粗化層,藉由光學顯微鏡或掃描式電子顯微鏡等進行剖面觀察,使線段從導電性基體的表面向粗化層的表面平行移動,對形成粗化層的複數個突起物,測定每一個突起物的寬幅,並決定最大值(最大寬幅)Wmax與最小值(最小寬幅)Wmin。更詳細地說明,如圖3所示,從導電性基體1向粗化層的方向拉垂直線,從其頂點向導電性基體1的方向以與基體平行的線(平行線)掃描時,決定顯示突起物4的最大值之寬幅作為最大寬幅Wmax,並且從最大寬幅Wmax位置向導電性基體1的方向,進一步以平行線掃描時,決定顯示突起物4的最小值之寬幅作為最小寬幅Wmin。然後,在本發明中,其比例Wmax/Wmin的值必須為1~5。 In the present invention, the maximum width and the minimum width of the protrusions can be processed, for example, by focusing ion beam (Focused Ion Beam, FIB) or mechanical grinding, to process the lead frame material forming the roughened layer to make a vertical section. Next, the roughened layer of the vertical cross-section sample is observed with a light microscope or a scanning electron microscope, and the line segment is moved in parallel from the surface of the conductive substrate to the surface of the roughened layer. For a plurality of protrusions, determine the width of each protrusion, and determine the maximum (maximum width) Wmax and minimum (minimum width) Wmin. To explain in more detail, as shown in FIG. 3, when a vertical line is drawn from the conductive substrate 1 in the direction of the roughened layer, and the direction from the apex to the conductive substrate 1 is scanned with a line (parallel line) parallel to the substrate, it is determined. The width of the maximum value of the display protrusions 4 is taken as the maximum width Wmax. When scanning from the position of the maximum width Wmax to the conductive substrate 1 in parallel lines, the width of the minimum value of the display protrusions 4 is determined as The minimum width Wmin. Then, in the present invention, the value of the ratio Wmax / Wmin must be 1 to 5.

再者,突起物4的最小寬幅Wmin,係指比起在粗化皮膜3的厚度方向剖面所測定時的突起物4的最大寬幅Wmax的測定位置,位在較靠近導電性基體1側的下側部分所測定時的最小寬幅Wmin。這是基於以下見解:在剪切試驗中,根據位於導電性基體1側之突起物4的下側部分(基端部分)的寬幅,會 影響剪切強度。再者,為了觀察突起物4之任意剖面,在粗化層2之各式各樣的位置進行觀察。此係,由於通常粗化層2基本上係形成為三維,故作為測定突起物4的最大寬幅Wmax與最小寬幅Wmin的粗化層2,係1層的粗化層2的情形,或圖5所示之2層以上的粗化層(例如在圖5中係2層的粗化層2-1、2-2),且將可測定突起物4的最大寬幅Wmax與最小寬幅Wmin之情形作為測定對象,除此之外,例如為2層以上的粗化層之粗化皮膜3的最表面輪廓不明確時,或粗化層2看起來從導電性基體1浮起的情形等,在本發明中無法作為測定對象的粗化層。藉由該等手法,在任意的剖面,對存在於1個粗化層2之10個突起物4,分別測定最大寬幅Wmax與最小寬幅Wmin,算出最大寬幅Wmax對最小寬幅Wmin的比例Wmax/Wmin,將具有上述比例的平均值為1~5倍的粗化層2之導線架材料10,定義作為本發明的導線架材料。 In addition, the minimum width Wmin of the protrusions 4 refers to the measurement position of the maximum width Wmax of the protrusions 4 when measured in the thickness direction section of the roughened film 3, and is located closer to the conductive substrate 1 side. The minimum width Wmin when measured at the lower part of. This is based on the insight that the shear strength is affected by the width of the lower portion (base end portion) of the protrusion 4 on the conductive substrate 1 side in the shear test. In addition, in order to observe an arbitrary cross section of the protrusion 4, observation was performed at various positions of the roughened layer 2. In this system, since the roughened layer 2 is generally formed in three dimensions, the roughened layer 2 that measures the maximum width Wmax and the minimum width Wmin of the protrusion 4 is a roughened layer 2 of one layer, or The roughened layer of two or more layers shown in FIG. 5 (for example, two roughened layers 2-1 and 2-2 in FIG. 5), and the maximum width Wmax and the minimum width of the protrusion 4 can be measured. In the case of Wmin, other than the measurement target, for example, when the outermost contour of the roughened film 3 with two or more roughened layers is not clear, or when the roughened layer 2 appears to float from the conductive substrate 1 Etc. In the present invention, a roughened layer that cannot be a measurement target. By these methods, the maximum width Wmax and the minimum width Wmin of the ten protrusions 4 existing in one roughened layer 2 are measured at an arbitrary cross section, respectively, and the maximum width Wmax versus the minimum width Wmin is calculated. The ratio Wmax / Wmin is defined as the lead frame material 10 having the roughened layer 2 having an average value of 1 to 5 times the above ratio as the lead frame material of the present invention.

<關於突起物的最小寬幅及突起物彼此的間隔> <About the minimum width of the protrusions and the distance between the protrusions>

此外,本發明中形成粗化層2之突起物4的最小寬幅Wmin的大小,並無特別規定,若最小寬幅Wmin過小,則有樹脂難以在粗化層2的突起物4之間的間隙流動的傾向,另一方面,若最小寬幅Wmin過大,則有使增大剪切強度的效果變小的傾向。因此,突起物4的最小寬幅Wmin,平均以0.2μm~3μm的範圍為佳,以0.5μm~1μm的範圍為較佳。此外,關於突起物4彼此的間隔,並無特別限定,惟突起物4與突起物4的頂點彼此的平均間隔以0.2~20μm的範圍為佳,以0.5μm~10μm的範圍為更佳。 In addition, the minimum width Wmin of the protrusions 4 forming the roughened layer 2 in the present invention is not particularly limited. If the minimum width Wmin is too small, it is difficult for the resin to be between the protrusions 4 of the roughened layer 2. On the other hand, if the minimum width Wmin is too large, the effect of increasing the shear strength tends to be small. Therefore, the minimum width Wmin of the protrusions 4 is preferably in the range of 0.2 μm to 3 μm on average, and more preferably in the range of 0.5 μm to 1 μm. The distance between the protrusions 4 is not particularly limited, but the average distance between the apexes of the protrusions 4 and the protrusions 4 is preferably in a range of 0.2 to 20 μm, and more preferably in a range of 0.5 to 10 μm.

<關於粗化層的比表面積> <About the specific surface area of the roughened layer>

本發明的導線架材料10,首先導電性基體(以下,亦僅稱為「基體」。)1具有粗化層2。該粗化層2之比表面積以110%以上為佳。這是由於若比表面積未滿110%,則無法充分得到錨定效果。再者,關於比表面積的上限,並無特別限制,但由於比表面積過大的話則粗化的凹凸變得大大,而使粗化層變得容易脫落,故比表面積以500%以下為佳。 In the lead frame material 10 of the present invention, first, a conductive substrate (hereinafter, also referred to simply as a "substrate") 1 has a roughened layer 2. The specific surface area of the roughened layer 2 is preferably 110% or more. This is because if the specific surface area is less than 110%, the anchoring effect cannot be sufficiently obtained. In addition, there is no particular limitation on the upper limit of the specific surface area, but if the specific surface area is too large, the roughened unevenness becomes large, and the roughened layer easily falls off. Therefore, the specific surface area is preferably 500% or less.

再者,比表面積的計算方法,如圖2所示之導線架材料10的剖面,請見導線架材料10的剖面,將粗化皮膜3的最表層的線段長度(在圖2係以虛線A表示。),除以導電性基體1的表面的(直線)長度(在圖2係粗實線B)之比例A/B的百分率成為比表面積(%),例如可使用非接觸式干涉顯微鏡等的測定裝置(例如BRUKER AXS公司製)進行測定。此外,本發明之粗化層的形成處,只要形成在經樹脂鑄模之部分的至少一部分即可,當然可全面處理,亦可部分地形成粗化層2。此外,例如,以導線架材料10經樹脂鑄模的部分之至少1/5以上為佳,更佳為形成在1/2以上的面積,可發揮提升密著性的效果。最佳為於經樹脂鑄模的全面上形成粗化層2。設置於此部分之粗化層2的形狀,可為線條狀、點狀、環狀等各式各樣的形態。再者,樹脂鑄模只有在單面的產品中,亦可例如僅在單面形成粗化層2。 In addition, the calculation method of the specific surface area is shown in the cross-section of the lead frame material 10 shown in FIG. 2. Please refer to the cross-section of the lead frame material 10 to roughen the line segment length of the outermost layer of the film 3 (the dotted line A in FIG. 2). The ratio A / B divided by the (straight) length (the thick solid line B in FIG. 2) of the surface of the conductive substrate 1 is the specific surface area (%). For example, a non-contact interference microscope can be used. (For example, manufactured by BRUKER AXS). In addition, the formation place of the roughened layer of the present invention may be formed on at least a part of the portion through the resin mold, and of course, the roughened layer 2 may be partially processed. In addition, for example, it is preferable to form at least 1/5 or more of the portion of the lead frame material 10 through the resin mold, and more preferably to form an area of 1/2 or more, so that the effect of improving adhesion can be exhibited. Preferably, the roughened layer 2 is formed over the entire surface of the resin mold. The shape of the roughened layer 2 provided in this portion may be various shapes such as a line shape, a dot shape, and a ring shape. In addition, the resin mold is only included in a single-sided product, and for example, the roughened layer 2 may be formed only on a single-sided product.

(中間層) (middle layer)

此外,本發明的導線架材料10,亦可在導電性基體1與粗化皮膜3之間,形成例如用於抑制構成導電性基體1的組成成 分擴散或改善密著性的中間層。中間層,可舉例如鎳、鎳合金、鈷、鈷合金、銅或銅合金。 In addition, the lead frame material 10 of the present invention may form an intermediate layer between the conductive substrate 1 and the roughened film 3, for example, to suppress the diffusion of constituent components constituting the conductive substrate 1 or to improve adhesion. The intermediate layer may be, for example, nickel, a nickel alloy, cobalt, a cobalt alloy, copper, or a copper alloy.

(表面皮膜) (Surface film)

此外,本發明的導線架材料10,較佳為在粗化皮膜3的表面的至少一部分之上,直接或經由中間層,進一步具備含有至少1層之表面皮膜,表面披覆層較佳為包含選自由鈀、鈀合金、銠、銠合金、釕、釕合金、鉑、鉑合金、銥、銥合金、金、金合金、銀及銀合金所組成的群組之金屬或合金。 In addition, the lead frame material 10 of the present invention is preferably provided on at least a part of the surface of the roughened film 3 directly or via an intermediate layer, and further includes a surface film containing at least one layer, and the surface coating layer preferably contains A metal or alloy selected from the group consisting of palladium, palladium alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, gold alloy, silver, and silver alloy.

[表面披覆層] [Surface coating layer]

構成表面披覆層的各種合金,可舉例如:作為鈀合金之鈀-銀合金、作為銠合金之銠-鈀合金、作為釕合金之釕-銥合金、作為鉑合金之鉑-金合金、作為銥合金之鉑-銥合金、作為金合金之金-銀合金、作為銀合金之銀-錫合金等。表面皮膜亦可為1種,但以2層以上為佳。構成表面皮膜的表面披覆層為2層以上時之代表性的層構成,係從粗化皮膜3側的層積順序,可舉例依序為Pd/Au、Rh/Au、Pd/Ag/Au、Pd/Rh/Au、Ru/Pd/Au等。藉由如此地在粗化皮膜上形成表面皮膜層,可對導線架的發熱提升耐熱性,同時可提升形成粗化皮膜的粗化層之粗化粒子的突起物的強度,並防止突起物的斷裂,進一步發揮錨定效果。此外,由提升對表面皮膜的密著性的觀點來看,相對於粗化層為銅、鎳的2層,表面皮膜層較佳為Pd/Au的2層或Rh/Au的2層;作為粗化層的層構成,下側粗化層為銅,且上側粗化層為鎳的2層,相對於此,作為表面皮膜層的層構成,更佳為下側表面皮膜層為Pd,且上側表面披覆層為Au 的2層,或者下側表面皮膜層為Rh,且上側表面披覆層為Au的2層。 Various alloys constituting the surface coating layer include, for example, palladium-silver alloy as a palladium alloy, rhodium-palladium alloy as a rhodium alloy, ruthenium-iridium alloy as a ruthenium alloy, platinum-gold alloy as a platinum alloy, and Platinum-iridium alloys of iridium alloys, gold-silver alloys as gold alloys, silver-tin alloys as silver alloys, and the like. The surface film may be one type, but two or more layers are preferable. The typical layer structure when the surface coating layer constituting the surface film is two or more layers, the lamination order from the 3 sides of the roughened film, for example, Pd / Au, Rh / Au, Pd / Ag / Au , Pd / Rh / Au, Ru / Pd / Au, etc. By forming the surface film layer on the roughened film in this way, the heat resistance of the lead frame can be improved, and at the same time, the strength of the protrusions of the roughened particles forming the roughened layer of the roughened film can be increased, and the protrusions can be prevented. Fracture, further exert the anchoring effect. In addition, from the viewpoint of improving the adhesion to the surface film, the surface film layer is preferably two layers of Pd / Au or two layers of Rh / Au, compared to two layers of copper and nickel whose roughened layer is; The layer structure of the roughened layer, the lower roughened layer is copper, and the upper roughened layer is nickel. On the other hand, as the layer structure of the surface coating layer, the lower surface coating layer is more preferably Pd, and The upper surface coating layer is two layers of Au, or the lower surface coating layer is Rh, and the upper surface coating layer is two layers of Au.

該等表面披覆的膜厚,若過厚則會將粗化皮膜3的表面凹凸埋沒,而無法充分發揮上述本發明的效果,此外,表面皮膜主要以重金屬材料所構成,故可能導致成本上升。因此,各表面披覆層的膜厚,作為層積之表面披覆層的總膜厚(表面皮膜的膜厚),以1μm以下為佳,以0.03以下為較佳。 If the thickness of these surface coatings is too thick, the surface of the roughened film 3 will be buried, so that the effects of the present invention cannot be fully exerted. In addition, the surface film is mainly composed of heavy metal materials, which may increase the cost. . Therefore, the film thickness of each surface coating layer is preferably 1 μm or less, and more preferably 0.03 or less as the total film thickness (film thickness of the surface film) of the laminated surface coating layer.

(關於導線架材料的製造方法) (About manufacturing method of lead frame material)

接著,以下說明本發明的導線架材料10的製造方法。 Next, the manufacturing method of the lead frame material 10 of this invention is demonstrated below.

準備導電性基體1,對該導電性基體1,施以陰極電解脫脂步驟及酸洗步驟。接著,根據需要,藉由電鍍形成中間層之後,藉由電鍍形成至少含有1層粗化層2的粗化皮膜3,之後,進一步根據需要,藉由電鍍形成至少含有1層表面披覆層的表面皮膜,可製造導線架材料10。作為具體的製造條件的代表例,分別在表1中表示陰極電解脫脂條件,在表2中表示酸洗條件,在表3中表示各種中間層的形成條件,在表4中表示各種粗化層2的形成條件,及在表5中表示各種表面披覆層的形成條件。在上述導線架材料10的製造方法中,例示將中間層、粗化層2及表面披覆層均以電鍍進行製造之情形。粗化層2,由於可藉由電流密度、攪拌、溫度、處理時間等相對較容易控制突起物的形狀且簡便,故以電鍍法形成為佳,再者,關於中間層或表面披覆層,亦可藉由如電鍍法的濕式鍍覆法形成,從生產性的觀點為較佳,惟亦可以乾式鍍覆法或其他製造方法進行製造,並無特別限定。 A conductive substrate 1 is prepared, and the conductive substrate 1 is subjected to a cathodic electrolytic degreasing step and an acid washing step. Next, as required, after forming the intermediate layer by electroplating, a roughened film 3 including at least one roughened layer 2 is formed by electroplating, and then, if necessary, an electrode with at least one surface coating layer is formed by electroplating. The surface film can be used to manufacture the lead frame material 10. As representative examples of specific manufacturing conditions, the cathode electrolytic degreasing conditions are shown in Table 1, the pickling conditions are shown in Table 2, the formation conditions of various intermediate layers are shown in Table 3, and various roughened layers are shown in Table 4. The forming conditions of 2 and Table 5 show the forming conditions of various surface coating layers. In the manufacturing method of the lead frame material 10 described above, the case where the intermediate layer, the roughened layer 2 and the surface coating layer are all manufactured by electroplating is exemplified. The roughened layer 2 is relatively easy to control the shape of the protrusions by current density, agitation, temperature, processing time, and the like, and is therefore preferably formed by electroplating. Furthermore, regarding the intermediate layer or the surface coating layer, It can also be formed by a wet plating method such as an electroplating method, which is preferable from the viewpoint of productivity, but can also be manufactured by a dry plating method or other manufacturing methods, and is not particularly limited.

[實施例] [Example]

以下基於實施例更詳細地說明本發明,惟本發明並非限定於此。 Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited thereto.

準備預先裁切成試驗片尺寸40mm×40mm之板厚0.2mm的表6所示之各種導電性基體,以上述表1所示之條件進行陰極電解脫脂。接著,以表2所示之條件進行導電性基體的酸洗之後,以表6所示之層構成在導電性基體的表面上形成至少1層粗化層以得到導線架材料的試驗片。再者,粗化層的形成,不只是比表面積,亦控制在剖面的粗化層的突起物中最大寬幅對最小寬幅的比例。在實施例1~30之中,關於實施例11~13,於下側粗化層加上粗化皮膜,進一步形成上側粗化層,並以2層的粗化層所構成;此外,關於實施例22~24,在導電性基體與粗化皮膜之間進一步形成中間層,然後,關於實施例29及30,於下側粗化層加上粗化皮膜,進一步形成上側粗化層,並以2層的粗化層所構成,同時,進一步形成包含下側表面披覆層及上側表面披覆層之2層的表面皮膜。為參考起見,作為比較例1,粗化層的比表面積為550%而非常大,但並未控制形成粗化層之突起物的最大寬幅對最小寬幅的比例,進而製作在本發明的範圍外(5.2倍)之導線架材料的試驗片。 Various conductive substrates shown in Table 6 which were cut into a test piece size of 40 mm × 40 mm and a thickness of 0.2 mm were prepared in advance, and cathodic electrolytic degreasing was performed under the conditions shown in Table 1 above. Next, after pickling the conductive substrate under the conditions shown in Table 2, at least one roughened layer was formed on the surface of the conductive substrate with the layer configuration shown in Table 6 to obtain a test piece of a lead frame material. In addition, the formation of the roughened layer is not only the specific surface area, but also the ratio of the maximum width to the minimum width in the protrusions of the roughened layer in the cross section. Among Examples 1 to 30, in Examples 11 to 13, a roughened film was added to the lower roughened layer to further form an upper roughened layer, and the roughened layer was composed of two roughened layers. In Examples 22 to 24, an intermediate layer was further formed between the conductive substrate and the roughened film. Then, regarding Examples 29 and 30, a roughened film was added to the lower roughened layer to further form an upper roughened layer. A two-layer roughened layer is formed, and at the same time, a two-layer surface film including a lower surface coating layer and an upper surface coating layer is further formed. For reference, as Comparative Example 1, the specific surface area of the roughened layer is 550% and is very large, but the ratio of the maximum width to the minimum width of the protrusions forming the roughened layer is not controlled, and is further produced in the present invention. The test piece of the lead frame material outside the range (5.2 times).

在上述各試驗片中,將樹脂鑄模以Kohtaki精機公司製轉移鑄模試驗裝置(產品名:Model FTS),以模具溫度130℃,鑄模後保持時間90秒,注入壓力6.865MPa的條件下注入成形,形成接觸面積10mm2的布丁狀試驗片。將該試驗片投入高溫高濕試驗(85℃,85%RH,保持168小時),對該試驗片以如下所示之條件評估關於樹脂密著性及掉粉性。將評估結果顯 示於表7。 In each of the above test pieces, a resin mold was injection-molded using a transfer mold test device (product name: Model FTS) manufactured by Kohtaki Seiki Co., Ltd. at a mold temperature of 130 ° C, a retention time of 90 seconds after the mold, and an injection pressure of 6.865 MPa. A pudding-like test piece having a contact area of 10 mm 2 was formed. This test piece was put into a high-temperature and high-humidity test (85 ° C, 85% RH, and maintained for 168 hours), and the test piece was evaluated for resin adhesion and powder-removing property under the following conditions. The evaluation results are shown in Table 7.

(樹脂密著性評估) (Resin adhesion evaluation)

評估樹脂:G630L,住友Bakelite公司製(商品名) Evaluation resin: G630L, manufactured by Sumitomo Bakelite (trade name)

評估條件:裝置:4000Plus,Nordson Advanced Technology公司製(商品名), Evaluation conditions: Device: 4000Plus, made by Nordson Advanced Technology (trade name),

荷重元:50kg Load element: 50kg

測定範圍:10kg Measurement range: 10kg

測試速度:100μm/s Test speed: 100μm / s

測試高度:10μm Test height: 10μm

將樹脂密著性的評估結果顯示於表7。再者,表7所示之樹脂密著性的評估,係剪切強度(剝離強度)平均在9.8MPa以上時,樹脂密著性優異並以「A」表示,剪切強度(剝離強度)平均在4.9MPa以上未滿9.8MPa時,樹脂密著性良好並以「B」表示,然後,剪切強度(剝離強度)平均未滿4.9MPa時,樹脂密著性差並以「C」表示。 Table 7 shows the evaluation results of the resin adhesion. In addition, the evaluation of the adhesiveness of the resin shown in Table 7 indicates that when the average shear strength (peeling strength) is 9.8 MPa or more, the resin is excellent in adhesiveness and is represented by "A". The average shear strength (peeling strength) is When 4.9 MPa or more is less than 9.8 MPa, the resin adhesion is good and expressed as "B". Then, when the shear strength (peel strength) is less than 4.9 MPa on average, the resin adhesion is poor and expressed as "C".

樹脂密著性,係藉由測定「初期的剪切強度」與「高溫高濕試驗之後的剪切強度」之雙方分別進行評估。「高溫高濕試驗之後的剪切強度」,係將各試驗片樹脂鑄模之後,在溫度85℃,濕度85%的環境放置168小時之後的值。此外,所謂「初期的剪切強度」,係將各個試驗片樹脂鑄模之後(高溫高濕試驗之前)的剪切強度。 Resin adhesion was evaluated by measuring both the "initial shear strength" and the "shear strength after the high temperature and high humidity test". The "shear strength after the high temperature and high humidity test" is a value obtained after the resin of each test piece is cast and left in an environment at a temperature of 85 ° C and a humidity of 85% for 168 hours. The "initial shear strength" refers to the shear strength after the resin of each test piece is cast (before the high temperature and high humidity test).

(掉粉性評估) (Evaluation of powder loss)

掉粉性係依據目視進行靈敏性評估。將其評估結果顯示於表7。再者,表7所示之掉粉性中,沒有觀察到從表面的掉粉 時以「A(優)」表示,發生一點掉粉時以「B(良)」表示,然後,發生非常多的掉粉時以「C(不可)」表示,「A」及「B」係可供於實用的水準。 Powder loss is based on visual assessment of sensitivity. The evaluation results are shown in Table 7. In addition, among the powder-falling properties shown in Table 7, when no powder-falling from the surface was observed, it was represented by "A (excellent)", and when a little powder-falling occurred, it was represented by "B (good)". When the powder is dropped, it is expressed as "C (not allowed)", and "A" and "B" are available at a practical level.

由表7的評估結果可知,實施例1~30中,初期剪切強度及高溫高濕試驗之後的剪切強度均為「A」或「B」,維持良好的樹脂密著性,此外,掉粉性亦為「A」或「B」而 可供於實用的水準。相對於此,雖然粗化層的比表面積為550%而非常大,但並未控制形成粗化層之突起物的最大寬幅對最小寬幅的比例,而在本發明的範圍外(5.2倍)之比較例1,雖然初期剪切強度為「A」,樹脂密著性優良,但是高溫高濕試驗之後的剪切強度變成「C」,樹脂密著性大大地惡化,並且掉粉性亦為較差的「C」,並非可供實用的水準。 As can be seen from the evaluation results in Table 7, in Examples 1 to 30, both the initial shear strength and the shear strength after the high-temperature and high-humidity test were "A" or "B", maintaining good resin adhesion. The powderiness is also "A" or "B" and can be used at a practical level. In contrast, although the specific surface area of the roughened layer is 550% and is very large, the ratio of the maximum width to the minimum width of the protrusions forming the roughened layer is not controlled, and is outside the scope of the present invention (5.2 times Comparative Example 1) Although the initial shear strength is "A" and the resin is excellent in adhesiveness, the shear strength after the high-temperature and high-humidity test becomes "C", the resin adhesiveness is greatly deteriorated, and the powder-falling property is also A poor "C" is not a practical level.

【產業上的可利性】 [Industrial profitability]

本發明的導線架材料,即使在高溫高濕的耐久性試驗,例如在溫度85℃,濕度85%的環境放置168小時的嚴酷條件下進行高溫高濕試驗時,亦可維持對導線架之良好的樹脂密著性而幾乎不會惡化,使用該導線架材料所構成的半導體封裝體,可實現高度的可靠性。 The lead frame material of the present invention can maintain the good quality of the lead frame even when subjected to the high temperature and high humidity endurance test, for example, under severe conditions where the temperature is 85 ° C and the humidity is 85%, and is placed for 168 hours. The resin has almost no deterioration in adhesiveness, and a semiconductor package made of the lead frame material can achieve high reliability.

Claims (7)

一種導線架材料,其具備:導電性基體;及粗化皮膜,其包含在該導電性基體的至少一面上,直接或經由中間層,以複數個粗化粒子的突起物所形成的至少一層粗化層,其中上述突起物,具有以上述粗化皮膜的厚度方向剖面所測定時的最大寬幅,相對於比起該最大寬幅的測定位置位在較靠上述導電性基體側的下側部分所測定時的最小寬幅,呈1~5倍的形狀。     A lead frame material includes: a conductive substrate; and a roughened film, which is included on at least one side of the conductive substrate, directly or via an intermediate layer, at least one layer formed by a plurality of roughened particle protrusions. The formation layer, in which the protrusion has a maximum width when measured in a thickness direction cross-section of the roughened film, and is located at a lower portion closer to the conductive substrate than a measurement position of the maximum width. The smallest width at the time of measurement is 1 to 5 times.     如申請專利範圍第1項所述的導線架材料,其中上述導電性基體係銅、銅合金、鐵、鐵合金、鋁或鋁合金。     The lead frame material according to item 1 of the patent application scope, wherein the conductive base system is copper, copper alloy, iron, iron alloy, aluminum, or aluminum alloy.     如申請專利範圍第1或2項所述的導線架材料,其中上述粗化層,包含選自由銅、銅合金、鎳、鎳合金、鈀、鈀合金、銀、銀合金、錫、錫合金、鋅、鋅合金、銠、銠合金、釕、釕合金、銥及銥合金所組成之群組之金屬或合金。     The lead frame material according to item 1 or 2 of the scope of patent application, wherein the roughened layer comprises a material selected from the group consisting of copper, copper alloy, nickel, nickel alloy, palladium, palladium alloy, silver, silver alloy, tin, tin alloy, A metal or alloy of the group consisting of zinc, zinc alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, iridium and iridium alloy.     如申請專利範圍第1至3項之任一項所述的導線架材料,其中在上述粗化皮膜的表面的至少一部分上,進一步具備包含至少1層表面披覆層的表面皮膜,上述表面披覆層,包含選自由鈀、鈀合金、銠、銠合金、釕、釕合金、鉑、鉑合金、銥、銥合金、金、金合金、銀及銀合金所組成之群組之金屬或合金。     The lead frame material according to any one of claims 1 to 3, wherein at least a part of the surface of the roughened film further includes a surface film including at least one surface coating layer, and the surface coating The coating comprises a metal or alloy selected from the group consisting of palladium, palladium alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, gold alloy, silver, and silver alloy.     如申請專利範圍第4項所述的導線架材料,其中上述中間層係鎳、鎳合金、鈷、鈷合金、銅或銅合金。     The lead frame material according to item 4 of the scope of patent application, wherein the intermediate layer is nickel, nickel alloy, cobalt, cobalt alloy, copper or copper alloy.     一種導線架材料的製造方法,其包含形成粗化皮膜的步驟,該粗化皮膜,包含在該導電性基體的至少一面上,直接或經由中間層,藉由電鍍以複數個粗化粒子的突起物所形成的至少一層粗化層,其中上述突起物,具有以上述粗化皮膜的厚度方向剖面所測定時的最大寬幅,相對於比起該最大寬幅的測定位置位在較靠上述導電性基體側的下側部分所測定時的最小寬幅,呈1~5倍的形狀。     A method for manufacturing a lead frame material, comprising the step of forming a roughened film, the roughened film being included on at least one side of the conductive substrate, directly or via an intermediate layer, by plating with a plurality of roughened particle protrusions At least one roughened layer formed by an object, wherein the protrusion has a maximum width when measured in a thickness direction cross section of the roughened film, and is located closer to the conductive layer than a measurement position of the maximum width. The minimum width at the time of measurement of the lower part of the sex substrate side is 1 to 5 times.     一種半導體封裝體,其具有:申請專利範圍第1至5項之任一項所述的導線架材料。     A semiconductor package includes the lead frame material according to any one of claims 1 to 5.    
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